Matchless plasma source for semiconductor wafer manufacturing

Abstract

This invention provides a matchless plasma source that does not have a radio frequency (RF) matching circuit. [Solution] The matchless plasma source includes a controller connected to a DC voltage source on an agile DC rail to control the shape of the amplified rectangular waveform generated at the output of a half-bridge transistor circuit. The matchless plasma source further includes a half-bridge transistor circuit used to generate the amplified rectangular waveform for powering electrodes (such as an antenna) in the plasma chamber. The matchless plasma source further includes a reactance circuit between the half-bridge transistor circuit and the electrodes. The reactance circuit has a high-quality coefficient to cancel out the reactance of the electrodes. There is no radio frequency (RF) matching circuit or RF cable connecting the matchless plasma source to the electrodes.

Description

Technical Field

[0001] This embodiment relates to a matchless plasma source for coupling to an electrode.

Background Art

[0002] A plasma system is used to perform various operations on a wafer. The plasma system includes a radio frequency (RF) generator, an RF matching circuit, and a plasma chamber. The RF generator is connected to the RF matching circuit via an RF cable, and the RF matching circuit is connected to the plasma chamber. RF power is supplied to the plasma chamber in which the wafer is processed via the RF cable and the RF matching circuit. Also, one or more gases are supplied to the plasma chamber, and when the RF power is received, plasma is generated in the plasma chamber.

[0003] The embodiments described in this disclosure have arisen in such a context.

Summary of the Invention

[0004] Embodiments of this disclosure provide a system, an apparatus, a method, and a computer program for providing a matchless plasma source for coupling to an electrode. It should be understood that this embodiment can be implemented in various forms, such as, for example, a process, an apparatus, a system, hardware, a method, or a computer-readable medium. Some embodiments are described below.

[0005] In some embodiments, an RF power supply system (such as a matchless plasma source) is connected to an excitation electrode that can be used to generate or modify plasma in any wafer processing chamber utilizing RF power. For example, the RF power supply system supplies RF power to the excitation electrode (such as one or more coils, showerheads, wafer platens, or chucks). The RF power is coupled to the electrode using a power transistor (such as a field-effect transistor (FET) or insulated-gate bipolar transistor (IGBT)) which acts as a low-impedance voltage source for coupling the power to the electrode. There are many advantages to doing so compared to systems using RF generators, RF cables, and RF matching circuits. The advantages include reduced costs for RF matching circuits and RF cables, increased speed of plasma ignition and impedance adjustment, improved ability to form different types of advanced pulses, and multiplexing of coil power.

[0006] An RF generator with a 50Ω output section supplies power to a load using an RF cable (a 50Ω transmission line). Furthermore, to convert the load's impedance to 50Ω, power is supplied from the RF cable to an RF matching circuit (a mechanical or electronic RF impedance matcher). Once all impedances are matched to 50Ω, maximum power is supplied to the load, with 0 watts of reflected power. This is the method of power supply in wafer processing using plasma (e.g., etching, deposition, and physical vapor deposition (PVD)). Therefore, its operation has limitations that restrict future processing capabilities. These limitations include limitations on the speed of plasma ignition and impedance matching, the high cost of RF matching circuits and RF cables, limitations on the ability to generate different types of pulses, and limitations on controlling plasma uniformity.

[0007] In some embodiments described herein, a 50Ω RF power generator, a 50Ω RF cable, and RF matching circuitry used to convert the load impedance to approximately 50Ω are replaced by a connection of a low-impedance voltage source to the powered excitation electrode. The low-impedance voltage source comprises a power transistor (such as a FET or IGBT) structured in a half-bridge configuration to avoid shoot-through and operating in a push-pull configuration or full-bridge (H). The power transistor is controlled from a controller board with an RF frequency and pulsation-related signal transmitted to a gate driver (such as an FET gate driver). The power output from the low-impedance voltage source is determined by an agile DC (DC) rail. The agile DC rail is used to increase, decrease, or pulsate the power output from the low-impedance voltage source. The use of the agile DC rail is for power adjustment and modulation while allowing pulses of arbitrary shapes to be constructed. The pulsation capability is enhanced compared to plasma tools with RF generators, RF cables, and RF matching circuitry.

[0008] Furthermore, in various embodiments, depending on the power requirements, multiple transistors (such as FETs or IGBTs) are combined in a full or half-bridge configuration to provide a predetermined power output. Typically, the output impedance of each transistor is approximately 0.01 ohms to approximately 10 ohms. By varying the number of transistors, a predetermined power output is achieved.

[0009] In some embodiments, a reactance circuit is placed in series with a power transistor to supply power to an excitation electrode, thereby neutralizing the reactance of the excitation electrode. Without plasma, the power transistor essentially sees a low-resistance load. The reactance circuit, placed between the output of the power transistor (in a full or half-bridge configuration) and the excitation electrode, neutralizes the electrode's reactance by providing series resonance and producing a high-quality coefficient (Q). The reactance of the reactance circuit is designed to provide a high Q at the operating frequency of the power generator. For example, Q is approximately between about 50 and about 500 in the plasma-free case where plasma is not ignited in the wafer processing chamber. The advantage of high Q is that plasma ignition in the chamber is virtually instantaneous, as the excitation electrode experiences high voltage and electromagnetic fields. Following this virtually instantaneous ignition, the plasma is maintained in the wafer processing chamber.

[0010] Once the plasma is ignited, in various embodiments, the agile DC rail voltage is adjusted along with the operating frequency to maintain a constant output power from the power transistor by measuring the phase difference between the complex voltage and complex current at the output of the power transistor and maintaining a zero-degree phase difference. For example, a high-speed digitizer is used to measure the current input to the excitation electrode, and the operating frequency is changed to achieve a zero-degree phase difference.

[0011] In some embodiments, the systems and methods described herein cover the entire impedance range of plasma processing.

[0012] Another embodiment will become apparent from the following detailed description, which will be based on the attached drawings. [Brief explanation of the drawing]

[0013] Embodiments will be understood by referring to the following description made in relation to the attached drawings.

[0014] [Figure 1]A diagram illustrating one embodiment of a system for supplying power from a matchless plasma source to an electrode without connecting a radio frequency (RF) matching circuit and RF cable between the matchless plasma source and the electrode.

[0015] [Figure 2] A diagram illustrating one embodiment of the system to illustrate the details of the matchless plasma source.

[0016] [Figure 3A] Figure 2 shows a diagram illustrating one embodiment of the system to illustrate further details regarding the input, output, and reactance circuits of the matchless plasma source.

[0017] [Figure 3B] Figure 3A shows one embodiment of the system to illustrate that, instead of using a voltage-current (VI) probe, voltage and current probes are used in the system shown in Figure 3A.

[0018] [Figure 3C] Figures 3A and 3B illustrate one embodiment of the system to illustrate the use of diodes to limit the voltage in the transistors of the half-bridge field-effect transistor (FET) circuit of the system.

[0019] [Figure 3D] A diagram illustrating one embodiment of the system to illustrate the use of a reactance circuit having an inductor connected to a capacitively coupled plasma (CCP) chamber.

[0020] [Figure 4A] Figures 3A and 3B show a graph illustrating one embodiment of the shaping of the envelope of the amplified rectangular waveform generated at the output of the half-bridge FET circuit.

[0021] [Figure 4B] A figure illustrating one embodiment of the graph to explain the removal of higher-order harmonics from an amplified rectangular waveform.

[0022] [Figure 5A] A diagram showing an embodiment of a graph for explaining the pulsed sine waveform output from the reactance circuit of the system of FIGS. 3A and 3B.

[0023] [Figure 5B] A diagram showing an embodiment of a graph for explaining the triangular sine waveform output from the reactance circuit.

[0024] [Figure 5C] A diagram showing an embodiment of a graph for explaining the multi-state pulsed sine waveform output from the reactance circuit.

[0025] [Figure 5D] A diagram showing an embodiment of a graph for explaining another multi-state pulsed sine waveform output from the reactance circuit.

[0026] [Figure 5E] A diagram showing an embodiment of a graph for explaining yet another multi-state pulsed sine waveform output from the reactance circuit.

[0027] [Figure 5F] A diagram showing an embodiment of a graph for explaining an arbitrarily shaped sine waveform output from the reactance circuit.

[0028] [Figure 5G] A diagram showing an embodiment of a graph for explaining the continuous wave sine waveform output from the reactance circuit.

[0029] [Figure 5H] A diagram showing an embodiment of a graph for explaining the envelope of the pulsed sine waveform output from the reactance circuit.

[0030] [Figure 5I]This figure shows one embodiment of the graph to illustrate the envelope of the triangular sinusoidal waveform output from a reactance circuit.

[0031] [Figure 6A] Figure 1 shows one embodiment of a resonance plot to illustrate the change in the magnitude of the current-voltage ratio at the electrodes in the plasma chamber of the system shown in Figure 1, with respect to the change in the operating frequency of the generator, in the absence of plasma.

[0032] [Figure 6B] A figure showing one embodiment of a resonance plot to illustrate the changes in voltage, current, and power at the electrodes with respect to changes in the operating frequency of the generator, in the presence of plasma.

[0033] [Figure 7A] This figure shows one embodiment of a graph illustrating the ion saturation current at the wafer surface when using the system shown in Figure 1.

[0034] [Figure 7B] A diagram illustrating one embodiment of the ion saturation current when using a 50Ω RF generator, RF matching circuit, and RF cable.

[0035] [Figure 8] Figure 1 shows a graph illustrating one embodiment of the system to illustrate how the use of the system facilitates achieving multiple adjustment ranges of the plasma impedance within the plasma chamber, and how these adjustment ranges are equivalent to those achieved using a 50Ω RF generator, RF matching circuit, and RF cable.

[0036] [Figure 9A] A figure illustrating one embodiment of the graph to illustrate the power supplied at the output of a reactance circuit to the electrodes.

[0037] [Figure 9B]A figure illustrating one embodiment of a graph to explain the pulsed sinusoidal voltage supplied to an electrode over time.

[0038] [Figure 9C] Figures 3A and 3B show a graph illustrating one embodiment of the output voltage output from the power FET of the system.

[0039] [Figure 9D] A diagram illustrating one embodiment of the graph to explain the output current output from a power FET.

[0040] [Figure 10A] A figure illustrating one embodiment of the graph to explain the operating frequency as a function of time t in a pulse.

[0041] [Figure 10B] A diagram illustrating one embodiment of the graph to illustrate that the voltage and current supplied to the electrodes are in phase for a certain period of time in order to achieve the level of power to be supplied to the electrodes.

[0042] [Figure 10C] A diagram illustrating one embodiment of the graph to illustrate that the voltage and current supplied to the electrodes are in phase over different periods in order to achieve a power level.

[0043] [Figure 10D] A diagram illustrating one embodiment of the graph to illustrate that the voltage and current supplied to the electrodes are in phase for yet another period in order to achieve the power level.

[0044] [Figure 11A] A diagram illustrating one embodiment of the system to illustrate a tree having FETs and transformers for supplying power to electrodes.

[0045] [Figure 11B]A diagram illustrating one embodiment of the system to illustrate another tree of transistor circuits used to supply power to electrodes.

[0046] [Figure 11C] A diagram showing one embodiment of an H-bridge circuit used to supply power to electrodes.

[0047] [Figure 12A] A diagram illustrating one embodiment of a system to illustrate a cooling plate used to cool a transistor circuit board.

[0048] [Figure 12B-1] A side view showing one embodiment of the system to illustrate the cooling of multiple integrated circuit chips.

[0049] [Figure 12B-2] Top view of the system shown in Figure 12B-1.

[0050] [Figure 12C] An upper isometric view illustrating one embodiment of the system to illustrate the cooling of an integrated circuit chip when the chip is mounted vertically on a printed circuit board.

[0051] [Figure 12D] An upper isometric view illustrating one embodiment of the system to illustrate the cooling of an integrated circuit chip when a cooling plate is positioned adjacent to a vertically mounted substrate.

[0052] [Figure 12E] A side view showing one embodiment of the system to illustrate one embodiment for cooling an integrated circuit chip.

[0053] [Figure 12F] A side view showing one embodiment of the system to illustrate another embodiment for cooling an integrated circuit chip.

[0054] [Figure 12G] A side view showing one embodiment of the system to illustrate yet another embodiment for cooling an integrated circuit chip.

[0055] [Figure 12H] A side view of one embodiment of the system to illustrate the cooling plate and the container with milled flow channels.

[0056] [Figure 13] An isometric view of one embodiment of a cooling plate.

[0057] [Figure 14A] A diagram illustrating one embodiment of the system to illustrate the combined use of an inductively coupled plasma (ICP) / transformer-coupled (TCP) chamber and a matchless plasma source.

[0058] [Figure 14B] A diagram illustrating one embodiment of the system to illustrate the use of an ICP chamber in which a matchless plasma source is connected to a substrate holder and a TCP coil is connected to an RF generator via an RF matching circuit.

[0059] [Figure 14C] A diagram illustrating one embodiment of the system to illustrate another use of an ICP chamber in which a matchless plasma source is connected to a substrate holder and another matchless plasma source is connected to a TCP coil.

[0060] [Figure 14D] A diagram illustrating one embodiment of the system to illustrate the connection of a matchless plasma source to a Faraday shield.

[0061] [Figure 14E] A diagram illustrating one embodiment of the system to illustrate the multiplexing operation in which different TCP coils in a TCP plasma chamber are operated in multiples.

[0062] [Figure 15A]A diagram illustrating one embodiment of the system to illustrate the combined use of a matchless plasma source and a CCP chamber.

[0063] [Figure 15B] A diagram illustrating one embodiment of the system to illustrate the use of a matchless plasma source in a CCP chamber where the matchless plasma source is connected to a substrate holder.

[0064] [Figure 15C] A diagram illustrating one embodiment of the system to illustrate the use of matchless plasma sources in a CCP chamber, where one matchless plasma source is connected to a substrate holder and another matchless plasma source is connected to the upper electrode of the CCP chamber.

[0065] [Figure 15D] A diagram illustrating one embodiment of the system to illustrate the connection of a matchless power source and RF power supply to the substrate holder of the CCP chamber.

[0066] [Figure 15E] A diagram illustrating one embodiment of the system to illustrate the connection of a matchless power source and an RF power supply to the upper electrode of the CCP chamber.

[0067] [Figure 15F] A diagram illustrating one embodiment of the system illustrates the connection of a matchless power source and an RF power supply to the upper electrode of the CCP chamber, as well as the connection of another matchless power source and another set of RF power supplies to the substrate holder of the CCP chamber.

[0068] [Figure 16A] A diagram illustrating one embodiment of the system to illustrate a plasma chamber having a showerhead connected to a matchless plasma source.

[0069] [Figure 16B]Figure 16A illustrates one embodiment of the system to illustrate the plasma chamber in which a matchless plasma source is connected to a substrate holder instead of a showerhead.

[0070] [Figure 16C] Figure 16A illustrates one embodiment of the system to illustrate the plasma chamber in which a matchless plasma source is connected to a substrate holder and another matchless plasma source is connected to a showerhead.

[0071] [Figure 17A] A diagram illustrating one embodiment of the system to illustrate the connection of multiple matchless plasma sources to multiple microsources.

[0072] [Figure 17B] A diagram illustrating one embodiment of the system to illustrate the connection of the substrate holder to a 50Ω RF generator and a matchless plasma source.

[0073] [Figure 17C] A diagram illustrating one embodiment of the system to illustrate the provision of RF power from a matchless plasma source to the grid in the chuck, and the provision of RF power from a 50Ω RF generator to the cathode of the chuck.

[0074] [Figure 18] A diagram illustrating one embodiment of the system to illustrate the enclosure used to house a matchless plasma source.

[0075] [Figure 19] A block diagram illustrating one embodiment of the system to illustrate the RF cable and RF matching circuit. [Modes for carrying out the invention]

[0076] The following embodiments describe matchless plasma sources for coupling to electrodes. It should be understood that electrodes may take many forms and may be integrated into many types of systems for supplying radio frequency (RF) power. Generally, electrodes may also be called antennas, which receive RF power via electrical connections. In the context of some embodiments described herein, RF power is supplied to the chamber electrodes for the purpose of igniting plasma to perform one or more processing operations. For example, plasma may be ignited using the supplied RF power to perform etching operations, deposition operations, chamber cleaning operations, and other operations described herein. Examples of matchless plasma sources (MPS) are described, and these examples illustrate structural embodiments and applications useful for efficient supply of RF power and precisely controlled plasma ignition. It is evident that these embodiments can be implemented without some or all of these specific details. Also, detailed descriptions of well-known processing operations have been omitted to avoid unnecessarily obscuring these embodiments.

[0077] Matchless plasma sources offer technical advantages for plasma pre-striking, including a high-quality factor, resulting in high current and high voltage. Further technical advantages include an optimal quality factor for plasma sustainability for stable processing operation. Additionally, technical advantages include the realization of low-cost, high-performance plasma tools. Matchless plasma sources have low power impedance. Furthermore, when matchless plasma sources are used, there is no need for radio frequency (RF) matching circuits and RF cables.

[0078] Matchless plasma sources are provided to increase impedance matching speed, provide advanced pulse capability, and offer coil power multiplexing. Matchless plasma sources are configured to connect to electrodes (such as showerheads, coils, antennas, or wafer platens). RF cables and RF matching circuits are not required between the matchless plasma source and the plasma chamber. The absence of RF matching circuits and RF cables reduces (or eliminates, etc.) the opportunity for any power to be reflected from the plasma chamber to the matchless plasma source. The absence of RF matching circuits increases impedance matching speed. RF matching circuits have numerous circuit components, some of which are tuned to match the impedance associated with the plasma chamber. Such tuning reduces impedance matching speed. The systems and methods described herein increase impedance matching speed by eliminating RF matching circuits. Furthermore, the costs of RF matching circuits and RF cables are saved.

[0079] The matchless plasma source has an input section and an output section. The input section has a signal generator operating at the drive frequency. A reactance circuit associated with the output section generates a high-quality coefficient (Q) in the absence of plasma. The high Q value generated by the reactance circuit at the drive frequency facilitates the supply of a high voltage to the electrodes. The high voltage to the electrode surface greatly facilitates plasma ignition in the plasma chamber.

[0080] Furthermore, the output section includes a half-bridge field-effect transistor (FET) circuit. When the plasma is ignited in the plasma chamber, the drive frequency is adjusted to maintain a constant output power from the half-bridge FET circuit. For example, a high-speed digitizer is connected to the output of the half-bridge FET circuit to measure the input current waveform and input voltage waveform. The input current and voltage waveforms are measured while varying the drive frequency until the phase difference between the input current waveform and the input voltage waveform becomes zero degrees. By controlling the phase difference to zero in this way, the desired constant power is supplied to the electrodes.

[0081] Furthermore, electrodes are driven by different types of waveforms to support different types of processing (etching, cleaning, sputtering, deposition, etc.). For example, arbitrary-shaped pulses are generated at the output of the half-bridge FET circuit, or multiple-state pulses are generated at the output. Thus, pulses of different shapes and power levels are used to drive the electrodes. Different waveforms are generated by controlling the amount of direct current (DC) voltage provided at the output of the agile DC rail in the half-bridge FET circuit. The DC voltage is, Agile DC It is controlled by a controller board that provides voltage values ​​to the DC source of the rails. Furthermore, the drive frequency is adjusted to a high rate, such as less than 10 microseconds, in order to adjust the impedance associated with the plasma chamber.

[0082] Figure 1 shows one embodiment of a system 100 for supplying power from a matchless plasma source 102 to an electrode 106. The system 100 comprises a matchless plasma source 102 and a plasma chamber 104. An example of the matchless plasma source 102 is a low-impedance voltage source. Examples of the plasma chamber 104 include a capacitively coupled plasma (CCP) chamber, a chemical vapor deposition (CVD) chamber, an atomic layer deposition (ALD) chamber, a trans-coupled plasma (TCP) reactor, a plasma-enhanced chemical vapor deposition (PECVD) chamber, a plasma etching chamber, a plasma deposition chamber, or a plasma-enhanced atomic layer deposition (PEALD) chamber. Furthermore, electrode Examples of 106 include a showerhead, chuck, substrate support, capacitive upper electrode, transformer-coupled plasma (TCP) coil, and wafer platen. The matchless plasma source 102 is connected to the electrode 106 via a connection 110 (such as a conductor, RF strap, cylinder, bridge conductor, or a combination thereof).

[0083] Note that there is no RF matching circuit between the matchless plasma source 102 and the plasma chamber 104. Furthermore, there is no RF cable connecting the matchless plasma source to the antenna. An RF matching circuit comprises multiple circuit components (such as inductors and capacitors) to match the impedance of a load (such as a plasma chamber) connected to the output of the RF matching circuit with the impedance of a power source (such as an RF generator and RF cable) connected to the input of the RF matching circuit. Most of the power generated by the matchless plasma source 102 is applied to the electrode 106. For example, since there is no RF matching circuit and RF cable between the matchless plasma source 102 and the electrode 106, power is efficiently supplied from the matchless plasma source 102 to the electrode 106.

[0084] The substrate 108 (wafer, etc.) on which the integrated circuit is processed is in the plasma chamber 104, and the electrodes 106 On the upper surface or electrode 106 It is positioned below. The matchless plasma source 102 generates a shaped sinusoidal waveform (which is an RF signal) by operating at an operating frequency in the range of 50 kilohertz (kHz) to 100 megahertz (MHz). The shaped sinusoidal waveform is supplied from the matchless plasma source 102 to the electrode 106 via connection 110 for processing the substrate 108. Examples of processing the substrate 108 include material deposition onto the substrate 108, etching of the substrate 108, cleaning of the substrate 108, and sputtering of the substrate 108.

[0085] Figure 2 shows an embodiment of the system 200 to illustrate the details of the matchless plasma source 102. The system 200 comprises the matchless plasma source 102, a connection 110, and a plasma chamber 104. The matchless plasma source 102 comprises an input section 202, an output section 204, and a reactance circuit 206. The input section 202 is connected to the output section 204, which in turn is connected to the reactance circuit 206. The reactance circuit 206 is connected to the electrode 106 via the connection 110.

[0086] The input section 202 comprises a signal generator and part of a gate driver. The output section 204 comprises the remainder of the gate driver and a half-bridge transistor circuit. One example of the reactance circuit 206 includes a variable capacitor. Another example of the reactance circuit 206 includes a fixed capacitor. Yet another example of the reactance circuit 206 includes multiple capacitors and / or inductors connected to each other in series, parallel, or a combination thereof. Some of the capacitors are variable and the rest are fixed. Another example is that all the capacitors are either variable or fixed. Similarly, some of the inductors are variable and the rest are fixed. Another example is that all the inductors are either variable or fixed.

[0087] The input section 202 generates multiple square wave signals and supplies them to the output section 204. The output section 204 generates an amplified square wave from the multiple square wave signals received from the input section 202. Furthermore, the output section 204 shapes the envelope (such as the amplitude between peaks) of the amplified square wave. For example, to generate the envelope, a shaping control signal 203 is supplied from the input section 202 to the output section 204. The shaping control signal 203 has multiple voltage values ​​to shape the amplified square wave.

[0088] The shaped amplified rectangular waveform is transmitted from the output section 204 to the reactance circuit 206. The reactance circuit 206 removes higher-order harmonics from the amplified rectangular waveform (e.g., by filtering out) to generate a shaped sinusoidal waveform with a fundamental frequency. The shaped sinusoidal waveform has a shaped envelope.

[0089] The shaped sinusoidal waveform is transmitted from the reactance circuit 206 to the electrode 106 via the connection 110 for processing the substrate 108. For example, one or more process materials (fluorine-containing gas, oxygen-containing gas, nitrogen-containing gas, liquid for metal and dielectric deposition, etc.) are supplied to the plasma chamber 104. Upon receiving the shaped sinusoidal waveform and process material, the plasma is ignited within the plasma chamber 104 for processing the substrate 108.

[0090] Furthermore, the reactance of the reactance circuit 206 is modified by transmitting a quality coefficient control signal 207 from the input section 202 to the reactance circuit 206, thereby changing the reactance of the reactance circuit 206. In addition, in some embodiments, a feedback signal 205 is transmitted from the output O1 of the output section 204 to the input section 202. The phase difference is identified or determined from the feedback signal 205 in order to control the output section 204 to reduce (disable, etc.) the phase difference.

[0091] In various embodiments, in addition to or instead of the feedback signal 205, an optional feedback signal 209 is supplied from the output of the reactance circuit 206 to the input section 202.

[0092] In some embodiments, the input section 202 comprises a controller board having a signal generator and further comprises a gate driver, and the output section comprises a half-bridge transistor circuit.

[0093] Figure 3A shows an embodiment of the system 300 to illustrate further details regarding the input section 202, the output section 204, and the reactance circuit 206. The input section 202 comprises a controller board 302 and a portion of a gate driver 311. The gate driver 311 is connected to the controller board 302. The output section 204 comprises the remainder of the gate driver 311 and a half-bridge field-effect transistor (FET) circuit 318. The half-bridge FET circuit 318, or tree described later, is also referred to herein as an amplifier circuit and is connected to the gate driver 311.

[0094] The reactance circuit 206 includes a capacitor 322A, which is a variable capacitor. The controller board 302 includes a controller 304, a signal generator 306, and a frequency input 308. An example of a controller used herein includes a processor and a memory device. Other examples of controllers include a microprocessor, an application-specific integrated circuit (ASIC), a central processing unit, a processor, or a programmable logic device (PLD), or ideally, a field-programmable gate array (FPGA). The signal generator 306 is a square wave oscillator that generates a square wave signal (such as a digital waveform or pulse train). The square wave pulses between a first logic level (such as high or 1) and a second logic level (such as low or 0). The signal generator 306 generates a square wave signal at an operating frequency (such as 400 kHz, 2 MHz, 13.56 MHz, 27 MHz, or 60 MHz).

[0095] The gate driver 311 comprises a gate driver sub-part 310, a capacitor 312, a resistor 314, and the primary winding 316A of the transformer 316. Furthermore, the gate driver 311 comprises the remaining part including the secondary windings 316B and 316C of the transformer 316. The gate driver sub-part 310 comprises a plurality of gate drivers 310A and 310B. Each of the gate drivers 310A and 310B is connected to a positive voltage source at one end and to a negative voltage source at the other end.

[0096] The half-bridge FET circuit 318 comprises FETs 318A and 318B connected to each other in a push-pull configuration. An example of an FET is a metal-oxide-semiconductor field-effect transistor (MOSFET). For example, each FET in the half-bridge FET circuit 318 is formed from silicon carbide, silicon, or gallium nitride. Each FET 318A and 318B has an output impedance within a predetermined range (e.g., 0.01 ohms to 10 ohms). Furthermore, the half-bridge FET circuit 318 includes a DC rail 313 (illustrated within the dotted line), which includes a voltage source Vdc connected to the drain terminal D of FET 318A and the source terminal S of FET 318A, and a conductive element 319 (such as a conductor). Furthermore, the conductive element 319 is connected to the drain terminal D of FET 318B and the source terminal S of FET 318B. The source terminal S of FET318A is connected to the drain terminal D of FET318B, and the source terminal S of FET318 is connected to ground potential. Within the plasma chamber 104, electrode 106 is illustrated as a TCP coil, but instead, it may be an electrode in a CCP configuration.

[0097] System 300 further includes a voltage / current (VI) probe 324 connected to the output O1 of a half-bridge FET circuit 318. The VI probe 324 is a sensor that measures the complex current at output O1, the complex voltage at output O1, and the phase difference between the complex voltage and the complex current. The complex current has amplitude and phase. Similarly, the complex voltage has amplitude and phase. Output O1 is located between the source terminal S of FET 318A and the drain terminal D of FET 318B. The VI probe 324 is connected to the controller 304.

[0098] Controller 304 is connected to signal generator 306 to provide a frequency input 308 (such as the operating frequency) to signal generator 306. Controller 304 is further connected to a voltage source Vdc of DC rail 313 via a conductor. Signal generator 306 is further connected to gate drivers 310A and 310B at its output. Gate driver 310A is connected to capacitor 312, and gate driver 310B is connected to resistor 314. Capacitor 312 and resistor 314 are connected to the primary winding 316A of transformer 316.

[0099] Furthermore, the secondary winding 316B of transformer 316 is connected to the gate terminal of FET 318A, and the secondary winding 316C of transformer 316 is connected to the gate terminal of FET 318B. The output O1 of the half-bridge FET circuit 318 is connected to capacitor 322A, and capacitor 322A is connected to the TCP coil of electrode 106 via connection 110.

[0100] The controller 304 generates a set value (such as frequency input 308) and provides frequency input 308 to the signal generator 306. Frequency input 308 is the value of the operating frequency (such as 2MHz or 13.56MHz). When the signal generator 306 receives the set value from the controller 304, it generates an input RF signal having that operating frequency. The input RF signal is a square wave signal. The gate drivers 310A and 310B amplify the input RF signal to generate an amplified RF signal and supply the amplified RF signal to the primary winding 316A of the transformer 316.

[0101] Based on the direction of current flow in the amplified RF signal, either the secondary winding 316B or the secondary winding 316C generates a gate drive signal with a threshold voltage. For example, when the current of the amplified RF signal flows from the positively charged terminal (indicated by a dot) of the primary winding 316A to the negatively charged terminal (unindicated by a dot) of the primary winding 316A, the secondary winding 316B generates a gate drive signal 315A with a threshold voltage to turn on the FET 318A, and the secondary winding 316CSince it does not generate a threshold voltage, FET318B is off. On the other hand, when the current of the amplified RF signal flows from the negatively charged terminal of the primary winding 316A to the positively charged terminal of the primary winding 316A, the secondary winding 316C generates a gate drive signal 315B with a threshold voltage, turning on FET318B, and the secondary winding 316B Since it does not generate a threshold voltage, FET318A is off.

[0102] Each gate drive signal 315A and 315B is a square wave, and is, for example, a digital signal or pulse signal having an operating frequency. For example, each gate drive signal 315A and 315B transitions between a low level and a high level. The gate drive signals 315A and 315B are, multiple Having an operating frequency, They They are inversely synchronized with respect to each other. For example, gate drive signal 315A transitions from a low level (such as a low power level) to a high level (such as a high power level). At the time interval or point in time when gate drive signal 315A transitions from a low level to a high level, gate drive signal 315B transitions from a high level to a low level. Similarly, at the time interval or point in time when gate drive signal 315A transitions from a high level to a low level, gate drive signal 315B transitions from a low level to a high level. Inverse synchronization makes it possible to continuously turn FETs 318A and 318B on and off.

[0103] FET318A and 318B operate in succession. For example, when FET318A is turned on, FET318B is turned off, and when FET318B is turned on, FET318A is turned off. 318A During the period or time when FET318B is turned on, FET318B is turned off. Furthermore, during the period or time when FET318B is turned on, FET318A is turned off. FET318A and FET318B are not turned on simultaneously or during the same period.

[0104] When FET318A is ON, current flows from the power supply Vdc to output O1, generating a voltage at output O1, and FET318B is OFF. The voltage at the output is generated according to the voltage value received from the controller 304 or the arbitrary waveform generator, which will be described in detail later. When FET318B is OFF, no current flows from output O1 to the ground potential connected to FET318B. Current flows from output O1 to capacitor 322A. When FET318A is ON, current is pushed from the voltage source Vdc to capacitor 322A. Furthermore, when FET318B is ON, the voltage generated at output O1 generates a current flowing from output O1 to the ground potential connected to FET318B, and FET318A is OFF. Current is pulled from output O1 to ground potential. During the time interval when FET318A is OFF, no current flows from the voltage source Vdc to output O1.

[0105] Furthermore, the controller 304 generates a control signal (such as a shaping control signal 203) with a voltage value and provides the control signal to the voltage source Vdc via a conductor connecting the voltage source Vdc to the controller 304. The voltage value is within a range, for example, so that the agile DC rail 313 operates in the range of 0 to 80 volts. The voltage value is the amplitude of the voltage signal generated by the voltage source Vdc to further define the shaping envelope of the amplified rectangular waveform at output O1 by defining the shaping envelope of the voltage signal. For example, to generate a continuous waveform at output O1, the voltage value provides the peak-to-peak amplitude of the continuous waveform. The peak-to-peak amplitude defines the shaping envelope of the continuous waveform. As another example, to generate an amplified rectangular waveform with a pulse-shaped shaping envelope at output O1, the voltage value is changed substantially instantaneously (e.g., at a certain point in time or during a predetermined time interval) so that the peak-to-peak amplitude of the amplified rectangular waveform changes from a first parameter level (e.g., high level) to a second parameter level (e.g., low level), or from a second parameter level to a first parameter level. As yet another example, to generate an amplified rectangular waveform with an arbitrary-shaped shaping envelope at output O1, the voltage value is arbitrarily changed by controller 304 so that the peak-to-peak amplitude of the amplified rectangular waveform changes in a desired manner. When an amplified rectangular waveform of arbitrary shape is generated, controller 304 functions as an arbitrary waveform generator. As yet another example, to generate an amplified rectangular waveform with a shaping envelope of multiple state pulse shapes at output O1, the voltage value is changed substantially instantaneously (e.g., at a certain point in time) so that the peak-to-peak amplitude of the amplified rectangular waveform changes from a high parameter level to one or more intermediate levels, and then from one or more intermediate levels to another level (such as a low parameter level or a high parameter level). Note that an amplified rectangular waveform with a shaping envelope of multiple state pulse shapes can have any number of states (such as in the range of 2 to 1000).

[0106] As used herein, a parameter level includes one or more parameter values, excluding one or more parameter values ​​from another parameter level. For example, the energy at one parameter level may be greater than or less than the energy at a different parameter level. Examples of parameters include current, voltage, and power.

[0107] Based on gate drive signals 315A and 315B, FETs 318A and 318B are continuously operated, and by controlling the voltage Vdc of the agile DC voltage rail to change its voltage value, an amplified rectangular waveform is generated at output O1. The amount of amplification of the amplified rectangular waveform is based on the output impedance of the FETs of the half-bridge FET circuit 318, the voltage value supplied to the voltage source Vdc by the controller 304, and the maximum achievable voltage value of the voltage source Vdc. The amplified rectangular waveform has a shaped envelope. Capacitor 322A, along with the inductance of the TCP coil, receives the amplified rectangular waveform and reduces (e.g., by rejecting or filtering) the higher harmonics of the amplified rectangular waveform to generate a shaped sinusoidal waveform with a fundamental frequency. The shaped sinusoidal waveform also has a shaped envelope. The shaped sinusoidal waveform is supplied from the output of capacitor 322A to the TCP coil of electrode 106 via connection 110 to ignite or maintain the plasma in the plasma chamber 104. Plasma is used to process substrate 108 (Figure 1).

[0108] The VI probe 324 measures the complex voltage and current of the amplified rectangular waveform at output O1 and provides a feedback signal 205 containing the complex voltage and current to the controller 304. The controller 304 controls the VI probe 324From the complex voltage and current received, the controller 304 identifies the phase difference between the complex voltage and complex current of the amplified rectangular waveform and determines whether the phase difference is within a predetermined limit. For example, the controller 304 determines whether the phase difference is zero or within a predetermined range from zero. If it determines that the phase difference is not within the predetermined limit, the controller 304 changes the frequency value of the operating frequency to change the frequency input 308. The changed frequency value is provided from the controller 304 to the signal generator 306 to change the operating frequency of the signal generator 306. The operating frequency is changed, for example, in increments of 10 microseconds or less. The operating frequency of the signal generator 306 is changed until the controller 304 determines that the phase difference between the complex voltage and complex current measured by the VI probe 324 is within a predetermined limit. Once it determines that the phase difference between the complex voltage and complex current is within the predetermined limit, the controller 304 does not further change the frequency input 308. When the phase difference is within a predetermined limit, a predetermined amount of power is supplied from output O1 to electrode 106 via reactance circuit 206.

[0109] In addition to, or instead of, changing the frequency input 308, the controller 304 changes the voltage value supplied to the agile DC rail voltage Vdc to change the voltage signal generated by the voltage source Vdc. Upon receiving the changed voltage value, the voltage source Vdc changes its voltage signal to have the changed voltage value. The controller 304 continues to change the voltage value until a predetermined power setpoint is reached. The predetermined power setpoint is stored in the memory device of the controller 304.

[0110] In various embodiments, instead of changing the voltage of the amplified rectangular waveform at output O1, the current of the amplified rectangular waveform is changed. For example, a change in voltage controls a change in the current of the amplified rectangular waveform generated at output O1 of the half-bridge FET circuit 318. For example, the voltage is changed to achieve a predetermined current value of the amplified rectangular waveform at output O1. The predetermined current value is stored in the memory device of the controller 304. Furthermore, in various embodiments, instead of changing the voltage of the amplified rectangular waveform at output O1, the power of the amplified rectangular waveform is changed. For example, a change in voltage controls a change in the power of the amplified rectangular waveform generated at output O1. For example, the voltage is changed to achieve a predetermined power value of the amplified rectangular waveform at output O1. The predetermined power value is stored in the memory device of the controller 304. Any change in the voltage, current, or power of the amplified rectangular waveform generated at output O1 produces the same change in the voltage, current, or power of the shaped sinusoidal waveform generated at the output of the reactance circuit 206.

[0111] In some embodiments, the controller 304 is connected to the reactance circuit 206 via a motor driver and a motor. An example of a motor driver includes one or more transistors. The controller 304 sends a signal (such as a quality factor control signal 207) to the motor driver to generate a current signal that is sent from the motor driver to the motor. Upon receiving the current signal, the motor operates to change the reactance of the reactance circuit 206. For example, the motor operates to change the area between the plates of capacitor 322A to change the capacitance of the reactance circuit 206. In another example, the motor operates to change the inductance of an inductor in the reactance circuit 206. For example, the reactance of the reactance circuit 206 is changed to maintain a predetermined quality factor (such as a high-quality factor) of the reactance circuit 206. In yet another example, the reactance of the reactance circuit 206 is changed based on the type of plasma chamber (such as a CCP or ICP) to which the reactance circuit 206 is connected.

[0112] Capacitor 312 and resistor 314 Capacitor 312 has capacitance that reduces (cancels or cancels out, etc.) the inductance of the primary winding 316A. Reducing the inductance of the primary winding 316A facilitates the generation of the square wave signals 315A and 315B. Furthermore, resistor 314 reduces the oscillation of the square wave signal generated by the signal generator 306.

[0113] Agile DC Rail 313 The DC rail 313 is agile in that it has high-speed control of the voltage source Vdc by the controller 304. Both the controller 304 and the voltage source Vdc are electronic circuits, and thus the controller 304 This allows for virtually instantaneous control of the voltage source Vdc. For example, when the controller 304 transmits a voltage value to the voltage source Vdc, the voltage source Vdc changes the voltage of the voltage signal generated by the voltage source.

[0114] Resistor 320 Resistor 320 is observed by the output O1 of the half-bridge FET circuit 318. Resistor 320 is the stray resistance in the electrode 106 and the stray resistance of the connection 110 in the plasma when ignited in the plasma chamber 104.

[0115] Capacitor 322A Combined with the inductance of the TCP coil, capacitor 322A has a high-quality coefficient (Q). For example, the amount of power of the amplified rectangular waveform lost in capacitor 322A is lower than the amount of power of the amplified rectangular waveform transmitted to electrode 106 through capacitor 322A. The power of the amplified rectangular waveform is transmitted by a shaped sinusoidal waveform output from capacitor 322A to electrode 106. The high-quality coefficient of the circuit facilitates fast plasma ignition in the plasma chamber 104. Furthermore, capacitor 322A has a capacitance value that resonates with the inductive reactance of the plasma when ignited in the TCP coil and plasma chamber 104. For example, the reactance circuit 206 has a reactance that reduces (e.g., neutralizes or cancels) the reactance of electrode 106, the reactance of connection 110, the reactance of the plasma when ignited in plasma chamber 104, or a combination thereof. The reactance of the reactance circuit 206 is achieved by adjusting the capacitance of capacitor 322A. In the case of the CCP chamber, the reactance circuit 206 comprises one or more inductors, and the reactance of the inductors is achieved by adjusting the inductance of one or more inductors. Due to the reduction of reactance, the output O1 sees resistance 320 and sees no reactance at all.

[0116] FET318A and 318B Each FET in the half-bridge FET circuit 318 or in the tree described later in Figures 11A and 11B is manufactured from silicon carbide in some embodiments. Silicon carbide FETs have low internal resistance and fast switching times. The low internal resistance provides higher efficiency, which facilitates the FETs to turn on almost instantaneously and turn off quickly, such as in less than 10 microseconds. For example, each FET described herein is turned on or off in less than a given period (e.g., less than 10 microseconds). As an example, each FET is turned on or off in a period of about 1 microsecond to about 5 microseconds. As another example, each FET is turned on or off in a period of about 3 microseconds to about 7 microseconds. As yet another example, each FET is turned on or off in a period of about 0.5 microseconds to about 10 microseconds. Fast on and off results in little to no delay (e.g., zero) in the on-to-off transition and the off-to-on transition. For example, FET318A turns on at the same time as or during the same period as FET318B turns off, and FET318A turns off at the same time as or during the same period as FET318B turns on. If the on times of FET318A and 318B overlap, a shoot-through can occur, potentially damaging the FETs. Nearly instantaneous on and off of the FETs reduces the likelihood of shoot-through and thus the likelihood of damage. Furthermore, silicon carbide FETs are easy to cool. For example, the low internal resistance of silicon carbide FETs reduces the amount of heat they generate. Therefore, it is easy to cool silicon carbide FETs using cooling plates or heat sinks.

[0117] The components of the matchless plasma source 102 (such as transistors) are electronic components. Furthermore, there is no RF matching circuit or RF cable between the matchless plasma source 102 and the electrode 106. The presence of electronic components and the absence of an RF matching circuit and RF cable facilitates rapid plasma ignition and plasma sustainability by ensuring reproducibility and consistency.

[0118] In some embodiments, multiple controllers are used instead of or in addition to controller 304. For example, one of the multiple controllers is connected to a voltage source Vdc, and another of the multiple controllers is connected to a signal generator 306 to provide a frequency input 308. Exemplarily, controller 304 is connected to an arbitrary waveform generator (such as a digital signal processor) and to a frequency controller. The frequency controller is connected to the signal generator 306. Controller 304 sends a signal to the arbitrary waveform generator and another signal to the frequency controller. Upon receiving a signal from controller 304, the arbitrary waveform generator generates a voltage value for a shaping control signal 203 to shape an amplified rectangular waveform at output O1. Furthermore, upon receiving another signal from controller 304, the frequency controller generates a frequency value for the rectangular wave signal generated by the signal generator 306 to reduce the phase difference between the complex voltage and complex current received in the feedback signal 205.

[0119] In various embodiments, the controller 304 and the signal generator 306 are fabricated on separate circuit boards.

[0120] In some embodiments, instead of the transformer 316 being used as part of the gate driver 311, transistors (such as FETs or insulated-gate bipolar transistors (IGBTs)) are connected to each other to form part of the gate driver 311.

[0121] In various embodiments, other types of transistors (such as IGBTs, metal-semiconductor field-effect transistors (MESFETs), or junction field-effect transistors (JFETs)) are used instead of FETs in this specification.

[0122] In some embodiments, instead of the half-bridge FET circuit 318, another half-bridge circuit comprising a tree of transistors is used. For example, the first column of the tree includes 32 transistors connected to a first voltage source. Half of the 32 transistors are connected to the secondary winding of the transformer in the same way that FET 318A is connected to the secondary winding 316B, and the other half of the 32 transistors are connected to the secondary winding of the transformer in the same way that FET 318B is connected to the secondary winding 316C. A second column of the tree, located next to the first column, includes 16 transistors connected to a second voltage source. Furthermore, a third column of the tree is located next to the second column and includes 8 transistors. Also, a fourth column of the tree is located next to the third column and includes 4 transistors. A fifth column of the tree is located next to the fourth column and includes 2 transistors connected to output O1.

[0123] In various embodiments, instead of the VI probe 324, a voltage sensor and a current sensor are connected to output O1.

[0124] In some embodiments, a shunt capacitor is also used in addition to the series capacitor 322A. The shunt capacitor is connected to connection 110 at one end and to ground potential at the other end. In various embodiments, multiple shunt capacitors are used instead of one shunt capacitor. Multiple shunt capacitors are connected to each other in series or in parallel.

[0125] In various embodiments, an inductor is connected in series or parallel to the capacitor 322A to cancel out the reactance of electrode 106, either in place of or in addition to the capacitor 322A. In some embodiments, any number of inductors are connected in series or parallel to the capacitor 322A to cancel out the reactance of electrode 106.

[0126] The FETs described herein are of the n-type. In some embodiments, p-type FETs are used instead of n-type FETs. For example, in a half-bridge circuit, a voltage source Vdc is connected to the source terminal of a p-type FET via a conductive element 319. Furthermore, the drain terminal of one p-type FET is connected to the source terminal of another p-type FET. The drain terminal of the other p-type FET is connected to ground potential.

[0127] Figure 3B shows one embodiment of system 348 to illustrate that voltage probe 350 and current probe 352 are used instead of VI probe 324 (Figure 3A). System 348 is a system in which VI probe 324 Instead, voltage probes and current probes 352 System 350 is identical to System 300 except for the use of a different component. The voltage probe 350 is a sensor connected to the output O1 of the half-bridge FET circuit 318 to measure the voltage of an amplified rectangular waveform at output O1. In addition, the current probe 352 is connected to a point on connection 110 (e.g., the output of the reactance circuit 206). This point is located between the reactance circuit 206 and electrode 106. The voltage probe 350 is connected to the controller 304 via a conductor, and the current probe 352 is connected to the controller 304 via a conductor.

[0128] The voltage probe 350 measures the complex voltage of the amplified rectangular waveform at output O1 and provides the complex voltage to the controller 304. Furthermore, the current probe 352 is a reactance circuit 206 The complex current of the shaped sinusoidal waveform output from is measured and provided to the controller 304. The complex voltage is provided in the feedback signal 205, and the complex current is provided to the controller 304 in the optional feedback signal 209. The controller 304 identifies the phase of the complex voltage and the phase of the complex current and determines the phase difference between the phases of the complex voltage and the complex current. The controller 304 controls the operating frequency of the signal generator 306, or the magnitude of the parameters at output O1, or a combination thereof, to reduce the phase difference to within a predetermined limit.

[0129] Figure 3C shows one embodiment of system 370 to illustrate the diodes used to limit the voltage through FETs 318A and 318B of the half-bridge FET circuit 318 (Figures 3A, 3B, and 3D). System 370 is the same as system 300 in Figure 3A or system 348 in Figure 3B, except that system 370 utilizes multiple diodes D1 and D2. Furthermore, system 370 utilizes a capacitor 372. Diode D1 is connected between the drain and source terminals of FET 318A, and diode D2 is connected between the drain and source terminals of FET 318B. Furthermore, capacitor 372 is connected to the drain terminal D of FET 318A and the source terminal S of FET 318B.

[0130] When FET318A is turned on and FET318B is turned off, the voltage through FET318A continues to rise in the positive direction until it is limited by diode D1. Similarly, when FET318A is turned off and FET318B is turned on, the voltage through FET318B continues to rise in the negative direction until it is limited by diode D2. Therefore, diode D1 reduces (e.g., prevents) the possibility of shoot-through through FET318A, and diode D2 reduces (e.g., prevents) the possibility of voltage shoot-through through FET318B.

[0131] If there is a delay in the on and off states of FETs 318A and 318B, the current in DC rail 313 passes through capacitor 372 and then through capacitor 322A from output O1 to the electrode. 106 This reduces the possibility of current flowing to the electrodes. For example, during the period when both FETs 318A and 318B are on or off, current flows from DC rail 313 to capacitor 372. 106 This reduces the possibility of current flowing through it.

[0132] Note that the diode shown in the embodiment of Figure 3C may be connected to the corresponding FET in any of the embodiments of Figures 3A, 3B, and 3D.

[0133] Figure 3D shows one embodiment of system 380 to illustrate a reactance circuit 206 having an inductor 382 connected to the plasma chamber 104 when the plasma chamber 104 is a CCP plasma chamber. System 380 is the same as system 300 in Figure 3A, except that in system 380 the plasma chamber 104 is a CCP plasma chamber. When the plasma chamber 104 is a CCP plasma chamber, the reactance circuit 206 includes an inductor 382 instead of a capacitor 322A. The inductor 382 is connected to an output O1 and to an electrode 106 (such as the upper or lower electrode of the chuck of the CCP chamber).

[0134] In some embodiments, a variable inductor is used instead of inductor 382. The inductance of the variable inductor is controlled by controller 304 in the same way that the capacitance of capacitor 322A is controlled by controller 304. In various embodiments, the reactance circuit 206 comprises multiple inductors connected to each other in series, parallel, or a combination thereof. Some of the inductors are variable, and the remaining inductors are fixed. In another example, all of the inductors in the reactance circuit 206 are either variable or fixed.

[0135] Figure 4A is a diagram illustrating one embodiment of graph 402 to illustrate the shaping of the envelope 408 of the amplified rectangular waveform 406, which is an example of an amplified rectangular waveform generated at the output O1 of the half-bridge FET circuit 318 (Figures 3A and 3B). Graph 402 plots the parameters of the amplified rectangular waveform 406 against time t. As shown in the figure, the amplified rectangular waveform 406 transitions between multiple parameter levels (e.g., low level P1 and high level P2). The low level P1 has a smaller inter-peak amplitude than the high level P2.

[0136] Note that in some embodiments, instead of the amplified rectangular waveform 406 having a shaping envelope 408, another amplified rectangular waveform is generated that has a shaping envelope of a different shape (arbitrary shape, multilevel pulse shape, continuous wave shape, or triangular shape, etc.).

[0137] Figure 4B shows one embodiment of graph 404 to illustrate the removal of higher harmonics from the amplified rectangular waveform 406 generated at the output O1 of the half-bridge FET circuit 318 (Figures 3A and 3B). Graph 404 plots the parameters of the amplified rectangular waveform 406 against time t. The amplified rectangular waveform 406 consists of a waveform 408A having a fundamental frequency and a number of waveforms (such as waveforms 408B and 408C) having higher harmonic frequencies. Waveform 408B has a second harmonic frequency, and waveform 408C has a third harmonic frequency. The high-quality coefficient of the reactance circuit 206 (Figures 3A and 3B) facilitates the removal of higher harmonics from the amplified rectangular waveform 406 in order to provide waveform 408A at the output of the reactance circuit 206. Waveform 408A is supplied from the reactance circuit 206 to electrode 106. Waveform 408A is an example of a shaped sinusoidal waveform output from the reactance circuit 206.

[0138] Figure 5A is a diagram illustrating one embodiment of Graph 502 to illustrate a shaped sinusoidal waveform 504 having an envelope 506, which is an example of a shaped envelope. The shaped sinusoidal waveform 504 is an example of a shaped sinusoidal waveform output from the reactance circuit 206 (Figure 2). 502 This plots the parameters of the shaped sinusoidal waveform 504 against time t. The envelope 506 is the inter-peak parameter (such as inter-peak voltage) and has a rectangular shape (such as pulse shape).

[0139] Figure 5B shows one embodiment of Graph 508 to illustrate the triangular sinusoidal waveform 510. The triangular sinusoidal waveform 510 is an example of a shaped sinusoidal waveform output from the reactance circuit 206 (Figure 2). Graph 508 plots the parameters of the triangular sinusoidal waveform 510 against time t. The shaped sinusoidal waveform 510 has a triangular envelope 512, which is an example of a shaped envelope.

[0140] In some embodiments, the shaped sinusoidal waveform output from the reactance circuit 206 (Figure 2) has a sawtooth envelope.

[0141] Figure 5C shows an embodiment of Graph 514 to illustrate the multiple-state sinusoidal waveform 516. Graph 514 plots the parameters of the multiple-state sinusoidal waveform 516 against time t. The shaped sinusoidal waveform 516 is an example of a shaped sinusoidal waveform output from the reactance circuit 206 (Figure 2). The multiple-state sinusoidal waveform 516 has an envelope 518 having multiple states S1, S2, and S3. The envelope 518 is an example of a shaped envelope. The inter-peak parameters of the multiple-state sinusoidal waveform 516 in state S1 are greater than the inter-peak parameters of the multiple-state sinusoidal waveform 516 in state S2. Furthermore, the inter-peak parameters of the multiple-state sinusoidal waveform 516 in state S2 are greater than the inter-peak parameters of the multiple-state sinusoidal waveform 516 in state S3. States S1, S2, and S3 repeat at frequencies lower than the operating frequency of the signal generator 306 (Figures 3A and 3B). The shaped sinusoidal waveform 516 has its operating frequency.

[0142] In some embodiments, the inter-peak parameters of the multiple-state sinusoidal waveform 516 in state S1 are different from (smaller or larger than) the inter-peak parameters of the multiple-state sinusoidal waveform 516 in state S2. Furthermore, the inter-peak parameters of the multiple-state sinusoidal waveform 516 in state S2 are different from (larger or smaller than) the inter-peak parameters of the multiple-state sinusoidal waveform 516 in state S3. Also, the inter-peak parameters of the multiple-state sinusoidal waveform 516 in state S3 are different from (larger or smaller than) the inter-peak parameters of the multiple-state sinusoidal waveform 516 in state S1.

[0143] Figure 5D is a diagram illustrating one embodiment of graph 520 to illustrate the multiple-state sinusoidal waveform 522. Graph 520 plots the parameters of the multiple-state sinusoidal waveform 522 against time t. The shaped sinusoidal waveform 522 is an example of a shaped sinusoidal waveform output from the reactance circuit 206 (Figure 2). The multiple-state sinusoidal waveform 522 has an envelope 524 having multiple states S1, S2, S3, and S4. The envelope 524 is an example of a shaped envelope. The inter-peak parameters of the multiple-state sinusoidal waveform 522 in state S1 are greater than the inter-peak parameters of the multiple-state sinusoidal waveform 522 in state S2. Furthermore, the inter-peak parameters of the multiple-state sinusoidal waveform 522 in state S2 are greater than the inter-peak parameters of the multiple-state sinusoidal waveform 522 in state S3. Furthermore, the inter-peak parameter of the multiple-state sinusoidal waveform 522 in state S3 is greater than the inter-peak parameter of the multiple-state sinusoidal waveform 522 in state S4. As shown in Figure 5D, states S1, S2, S3, and S4 repeat at a frequency lower than the operating frequency of the signal generator 306 (Figures 3A and 3B). The shaped sinusoidal waveform 522 has its own operating frequency.

[0144] In some embodiments, the inter-peak parameters of the multiple-state sinusoidal waveform 522 in state S1 are different from (smaller or larger than) the inter-peak parameters of the multiple-state sinusoidal waveform 522 in state S2. Furthermore, the inter-peak parameters of the multiple-state sinusoidal waveform 522 in state S2 are different from (greater than or smaller than) the inter-peak parameters of the multiple-state sinusoidal waveform 522 in state S3. Also, the inter-peak parameters of the multiple-state sinusoidal waveform 522 in state S3 are different from (greater than or smaller than) the inter-peak parameters of the multiple-state sinusoidal waveform 522 in state S4. The inter-peak parameters of the multiple-state sinusoidal waveform 522 in state S4 are different from (greater than or smaller than) the inter-peak parameters of the multiple-state sinusoidal waveform 522 in state S1.

[0145] Figure 5E is a diagram illustrating one embodiment of graph 524 to illustrate the multiple pulse generation of the shaped sinusoidal waveform 526. Graph 524 plots the parameters of the multiple state sinusoidal waveform 526 against time t. The shaped sinusoidal waveform 526 is an example of a shaped sinusoidal waveform output from the reactance circuit 206 (Figure 2). The shaped sinusoidal waveform 526 has a multiple state envelope 528 that alternates between states S1 to Sn, where n is an integer greater than 1. For example, the multiple state envelope 528 transitions from state S1 to state S2. The multiple state envelope 528 further transitions from state S2 to state S3, and so on, until it reaches state Sn. As an example, the value of n is in the range of 4 to 1000. For example, the shaped sinusoidal waveform 526 has 100 states. States S1 to Sn repeat periodically. Envelope 528 is an example of a shaped envelope.

[0146] Note that the parameter levels (such as the inter-peak parameter values) between one of the states S1 to Sn are different from the parameter levels between another of the states S1 to Sn. For example, the inter-peak parameter values ​​in states S1 to S5 are different from each other. As shown in Figure 5E, states S1 to Sn repeat at a frequency lower than the operating frequency of the signal generator 306 (Figures 3A and 3B). The shaped sinusoidal waveform 526 has its own operating frequency.

[0147] Figure 5F shows one embodiment of Graph 530 illustrating the envelope 534 of the shaped sinusoidal waveform 532. The envelope 534 is an example of a shaping envelope. The shaped sinusoidal waveform 532 is an example of a shaped sinusoidal waveform output from the reactance circuit 206 (Figure 2). Graph 530 plots the parameters of the shaped sinusoidal waveform 532 against time t.

[0148] The shaped sinusoidal waveform 532 has an envelope 534 of arbitrary shape. For example, the envelope 534 has a plurality of periodically repeating states S1 to S8. In each state S1 and S2, the envelope 534 has a zero slope. Furthermore, in state S3, the envelope 534 has a positive slope, and in state S4, the envelope 534 has a negative slope. Furthermore, in state S5, the envelope 534 has a positive slope. In state S6, the envelope 534 has a negative slope, and in state S7, the envelope 534 has a positive slope. In state S8, the envelope 534 has a negative slope. As shown in Figure 5F, states S1 to S8 repeat at a frequency lower than the operating frequency of the signal generator 306 (Figures 3A and 3B). The shaped sinusoidal waveform 532 has its operating frequency.

[0149] Note that in some embodiments, the envelope 532 has a different slope than that shown in Figure 5F during one or more of the states S1 to S8. For example, in state S4, instead of a negative slope, the shaped sinusoidal waveform 532 has a positive or zero slope. In another example, in state S5, instead of a positive slope, the shaped sinusoidal waveform 532 has a negative or zero slope.

[0150] Figure 5G shows one embodiment of Graph 536 to illustrate a shaped sinusoidal waveform 538 having a continuous waveform. For example, the shaped sinusoidal waveform 538 has a continuous, non-pulsed envelope 540 from one parameter level to another. Further exemplify, the inter-peak parameters of the shaped sinusoidal waveform 538 are constant or between a constant and a predetermined variation of that constant. The envelope 540 is an example of a shaped envelope. Graph 536 plots the parameters of the shaped sinusoidal waveform 538 against time t. The shaped sinusoidal waveform 538 is an example of a shaped sinusoidal waveform output from a reactance circuit 206 (Figure 2).

[0151] Figure 5H shows one embodiment of graph 540 to illustrate the envelope 542 of the pulsed sinusoidal waveform output from the reactance circuit 206 (Figure 2). Graph 540 plots the power of the pulsed sinusoidal waveform against time t measured in milliseconds. The pulsed sinusoidal waveform with envelope 542 is similar to the sinusoidal waveform 504 in Figure 5A. The envelope 542 has a pulse shape and transitions between low and high states. The low state has a power level lower than the power level of the high state (e.g., energy of 1 or more). For example, all energy in the high state is in the range of 350-400 watts, and all energy in the low state is in the range of 80-120 watts.

[0152] figure 5I This figure shows one embodiment of Graph 544 to illustrate the envelope 546 of the shaped sinusoidal waveform output from the reactance circuit 206 (Figure 2). Graph 544 plots the power of the shaped sinusoidal waveform against time t measured in milliseconds. The shaped sinusoidal waveform with envelope 546 is similar to the sinusoidal waveform 510 in Figure 5B. The envelope 546 is triangular. For example, the envelope 546 has a negative slope immediately following a positive slope, followed immediately by another positive slope, and then another negative slope.

[0153] Figure 6A is an embodiment of Graph 600, a resonance plot illustrating the change in the magnitude of the current-voltage ratio associated with electrode 106 (Figure 1) with respect to a change in the operating frequency of signal generator 306 (Figures 3A and 3B). Graph 600 is generated when plasma is not ignited in plasma chamber 104 (Figure 1). Current and voltage are measured at electrode 106. Graph 600 plots the change in the magnitude of the current-voltage ratio against the operating frequency of signal generator 306. As is evident from Graph 600, the quality factor Q of electrode 106 is high when plasma is not ignited in plasma chamber 104.

[0154] Figure 6B is an embodiment of Graph 602, a resonance plot illustrating the changes in voltage, current, and power at electrode 106 (Figure 1) with respect to changes in the operating frequency of signal generator 306 (Figures 3A and 3B). Graph 602 plots the power, voltage, and current measured at electrode 106 against the operating frequency of signal generator 306. The graph plots the power, voltage, and current when the plasma is ignited in plasma chamber 104 (Figure 1). The operating frequency of signal generator 306 is controlled by controller 304 (Figures 3A and 3B) to control the power, voltage, and current measured at electrode 106. As is evident from Graph 602, the quality factor Q at electrode 106 is smaller than the quality factor shown in Graph 600 due to energy consumption by the plasma in plasma chamber 104.

[0155] Figure 7A shows one embodiment of Graph 702 to illustrate the ion saturation current Isat measured in milliamperes (mA) at the surface of a wafer. Graph 702 plots the ion saturation current against the distance from the wafer center for different wafers processed in a plasma chamber 104 (Figure 1) connected to a matchless plasma source 102 (Figure 1) without connecting an RF matching circuit and RF cables between the matchless plasma source 102 and the plasma chamber 104. The distance from the wafer center is measured in millimeters (mm). The effect of different power ratios on the radial ion saturation current is shown in Figure 7A.

[0156] Figure 7B shows one embodiment of Graph 704 to illustrate the ion saturation current when an RF matching circuit and RF cable are used in system 1902, which is shown later in Figure 19. System 1902 includes an RF cable 1908 and an RF matching circuit 1906 (Figure 19). Graph 704 plots the ion saturation current against the distance from the wafer center. The effect of different power ratios on the radial ion saturation current is shown in Graph 704. Note that the ion saturation current at the wafer surface is similar when using system 100 (Figure 1) or system 1302.

[0157] Figure 8 shows an embodiment of Graph 800 to illustrate how the use of System 100 in Figure 1 facilitates achieving an equivalent level of plasma impedance adjustment range in the plasma chamber 104 (Figure 1) compared to achieving it using an RF matching circuit. Graph 800 plots the plasma reactance X in the plasma chamber 104 against the plasma resistance R. Graph 800 includes several adjustment ranges T1, T2, and T3 having plasma resistance and reactance values, which are achieved when the matchless plasma source 102 is connected to the plasma chamber 104 as shown in Figure 1. All adjustment ranges T1, T2, and T3 of plasma resistance and reactance are achieved using System 100 in Figure 1.

[0158] Figure 9A is a diagram illustrating one embodiment of graph 902 to illustrate the power supplied at the output of the reactance circuit 206 (Figure 2) to the electrode 106 (Figure 2). The power is shaped according to the envelope 904. Graph 902 plots the power against time t.

[0159] Figure 9B shows one embodiment of graph 906 to illustrate the shaped sinusoidal voltage supplied to the plasma chamber 104 (Figure 1) with respect to time t. The voltage has a pulsed envelope 908, which further has an upper boundary 908A and a lower boundary 908B. Boundaries 908A and 908B define the peak-to-peak voltage.

[0160] Figure 9C is a diagram illustrating one embodiment of graph 910 to illustrate the voltage provided at output O1 (Figures 3A and 3B) from a power FET (such as FET318A or FET318B (Figures 3A, 3B, and 3D)). The voltage at output O1 has an envelope 912, which further has an upper boundary 912A and a lower boundary 918B. Boundaries 912A and 912B define the peak-to-peak voltage.

[0161] Figure 9D is a diagram illustrating one embodiment of graph 914 to illustrate the current supplied at output O1 from the power FET (Figures 3A, 3B, and 3D). The current at output O1 has an envelope 916, which further has an upper boundary 916A and a lower boundary 916B. Boundaries 916A and 916B define the peak-to-peak current.

[0162] Figure 10A is an embodiment of graph 1000 showing a plot 1002 of the operating frequency of the signal generator 306 (Figures 3A and 3B) against time t measured in milliseconds (ms). The operating frequency is adjusted by the controller 304 (Figures 3A, 3B, and 3D) in less than a predetermined time interval (e.g., less than 50 microseconds (μs)). For example, any change in the operating frequency of the signal generator 306 by the controller 304 is transmitted to the electrode 106 in less than 50 microseconds via the gate driver 311, half-bridge FET circuit 318, and reactance circuit 206 (Figures 3A, 3B, and 3D). This predetermined period facilitates achieving the plasma impedance of the plasma in the plasma chamber 104. Another example of the predetermined time interval includes 100 microseconds. For example, the operating frequency is adjusted in a period between 10 microseconds and 100 microseconds. Yet another example of the predetermined time interval includes 70 microseconds. For example, the operating frequency is adjusted over a period of 20 to 70 microseconds. When the operating frequency is adjusted, self-adjustment of the signal generator 306 occurs.

[0163] Figure 10B is an embodiment of Graph 1004 showing that the voltage signal 1006B and current signal 1006A, measured at output O1 of the half-bridge FET circuit 318 (Figures 3A, 3B, and 3D), are in phase during a first period to achieve the power level required to supply to electrode 106. Graph 1004 plots the current signal 1006A and the voltage signal 1006B against time t. As is evident from Graph 1004, both the current signal 1006A and the voltage signal 1006B are in phase at a time of 0.95 microseconds.

[0164] Figure 10C is an embodiment of Graph 1008 showing that the voltage signal 1006B and the current signal 1006A are in phase during a second period to achieve the level of power to supply to electrode 106. Graph 1008 plots the current signal 1006A and the voltage signal 1006B against time t. As is clear from Graph 1008, both the current signal 1006A and the voltage signal 1006B are in phase for a time of approximately 1 microsecond.

[0165] Figure 10D is an embodiment of Graph 1010 showing that the voltage signal 1006B and the current signal 1006A are in phase during a third period to achieve the power level required to supply to electrode 106. Graph 1010 plots the current signal 1006A and the voltage signal 1006B against time t. 1010 As is clear from the above, both the current signal 1006A and the voltage signal 1006B are in phase during a time of 1.05 microseconds. Therefore, it should be noted that during the first, second, and third periods, the current signal 1006A is in phase with the voltage signal 1006B in order to achieve the power levels for the first, second, and third periods.

[0166] Figure 11A is a diagram of one embodiment of system 1100, showing a tree 1101 of FETs 1102A, 1102B, 1102C, 1102D, 1102E, 1102F, 1102G, 1102H, 1102I, 1102J, 1102K, 1102L, 1102M, 1102N, 1102O, and 1102P, and transformers 1106A, 1106B, 1106C, 1106D, 1106E, 1106F, and 1106G.

[0167] System 1100 comprises a tree 1101, a capacitor 322A, and a plasma load. The plasma load includes an electrode 106 and plasma when ignited. Tree 1101 comprises a plurality of half-bridge circuits 1104A, 1104B, 1104C, 1104D, 1104E, 1104F, 1104G, and 1104H. Half-bridge circuit 1104A comprises FETs 1102A and 1102B. Similarly, half-bridge circuit 1104B comprises FETs 1102C and 1102D, half-bridge circuit 1104C comprises FETs 1102E and 1102F, half-bridge circuit 1104D comprises FETs 1102G and 1102H, and half-bridge circuit 1104E comprises FETs 1102I and 1102J. Furthermore, half-bridge circuit 1104F includes FETs 1102K and 1102L, half-bridge circuit 1104G includes FETs 1102M and 1102N, and half-bridge circuit 1104H includes FETs 1102O and 1102P.

[0168] The gate terminals of FETs 1102A, 1102C, 1102E, 1102G, 1102I, 1102K, 1102M, and 1102O are connected to gate driver 1152A (Figure 11B), while the gate terminals of FETs 1102B, 1102D, 1102F, 1102H, 1102J, 1102L, 1102N, and 1102P are connected to another gate driver 1152B (Figure 11B).

[0169] Output OUT1 of half-bridge circuit 1104A is connected to the primary winding 1108A of transformer 1106A. Similarly, output OUT2 of half-bridge circuit 1104B is connected to the primary winding 1108B of transformer 1106A. Furthermore, output OUT3 of half-bridge circuit 1104C is connected to the primary winding 1108C of transformer 1106B, and output OUT4 of half-bridge circuit 1104D is connected to the primary winding 1108D of transformer 1106B. In addition, output OUT5 of half-bridge circuit 1104E is connected to the primary winding 1108E of transformer 1106C, and output OUT6 of half-bridge circuit 1104F is connected to the primary winding 1108F of transformer 1106C. The output OUT7 of the half-bridge circuit 1104G is connected to the primary winding 1108G of the transformer 1106D, and the output OUT8 of the half-bridge circuit 1104H is connected to the primary winding 1108H of the transformer 1106D.

[0170] Furthermore, the secondary winding 1108H of transformer 1106A is connected to the primary winding 1108L of transformer 1106E. Similarly, the secondary winding 1108I of transformer 1106B is connected to the primary winding 1108M of transformer 1106E. Likewise, the secondary winding 1108J of transformer 1106C is connected to the primary winding 1108N of transformer 1106F. Also, the secondary winding 1108K of transformer 1106D is connected to the primary winding 1108O of transformer 1106F.

[0171] The secondary winding 1108P of transformer 1106E is connected to the primary winding 1108R of transformer 1106G. Similarly, the secondary winding 1108Q of transformer 1106F is connected to the primary winding 1108S of transformer 1106G. The secondary winding 1108T of transformer 1106G is connected to capacitor 322A via output O1.

[0172] Note that when FETs 1102A, 1102C, 1102E, 1102G, 1102I, 1102K, 1102M, and 1102O are ON, FETs 1102B, 1102D, 1102F, 1102H, 1102J, 1102L, 1102N, and 1102P are OFF. For example, during the time or time interval in which FETs 1102A, 1102C, 1102E, 1102G, 1102I, 1102K, 1102M, and 1102O are turned on by signals from gate driver 1152A, FETs 1102B, 1102D, 1102F, 1102H, 1102J, 1102L, 1102N, and 1102P are turned off by signals from gate driver 1152B. Similarly, during the time or time interval in which FETs 1102B, 1102D, 1102F, 1102H, 1102J, 1102L, 1102N, and 1102P are turned on by signals from gate driver 1152B, FETs 1102A, 1102C, 1102E, 1102G, 1102I, 1102K, 1102M, and 1102O are turned off by signals from gate driver 1152A.

[0173] When FETs 1102A, 1102C, 1102E, 1102G, 1102I, 1102K, 1102M, and 1102O are ON, the positive voltages generated at outputs OUT1 and OUT2 are transformed through transformers 1106A, 1106E, and 1106G; the positive voltages generated at outputs OUT3 and OUT4 are transformed through transformers 1106B, 1106E, and 1106G; the positive voltages generated at outputs OUT5 and OUT6 are transformed through transformers 1106C, 1106F, and 1106G; and the positive voltages generated at outputs OUT7 and OUT8 are transformed through transformers 1106D, 1106F, and 1106G to become a positive voltage at output O1.

[0174] Similarly, when FETs 1102B, 1102D, 1102F, 1102H, 1102J, 1102L, 1102N, and 1102P are ON, the negative voltages generated at outputs OUT1 and OUT2 are transformed through transformers 1106A, 1106E, and 1106G; the negative voltages generated at outputs OUT3 and OUT4 are transformed through transformers 1106B, 1106E, and 1106G; the negative voltages generated at outputs OUT5 and OUT6 are transformed through transformers 1106C, 1106F, and 1106G; and the negative voltages generated at outputs OUT7 and OUT8 are transformed through transformers 1106D, 1106F, and 1106G, resulting in a negative voltage at output O1.

[0175] Note that the voltage signal generated by the DC voltage source Vdc of tree 1101 is controlled by controller 304 (Figures 3A, 3B, and 3D) in the same way that the voltage signal generated by the voltage source Vdc (Figures 3A, 3B, and 3D) is controlled. For example, controller 304 is connected to the DC voltage source Vdc of tree 1101 to control the voltage signal generated by the DC voltage source.

[0176] Note that a predetermined power level is achieved based on the number of DC voltage sources in tree 1101, the number of FETs used in tree 1101, and the maximum reachable voltage of each voltage source in tree 1101. For example, a predetermined power level at output O1 changes with changes in the number of half-bridge circuits used in tree 1101. For example, increasing the number of half-bridge circuits increases the number of FETs. As the number of FETs increases, the output impedance of the FETs increases. Also, as the number of half-bridge circuits in tree 1101 increases, the number of DC voltage sources increases. As a result, the predetermined power level achieved at output O1 changes.

[0177] In various embodiments, the maximum reachable voltage of a DC voltage source connected to one half-bridge circuit of tree 1101 is different from the maximum reachable voltage of another DC voltage source connected to another half-bridge circuit of tree 1101. For example, a voltage source having a maximum reachable voltage Vdc1 is connected to half-bridge circuit 1104A, and another voltage source having a maximum reachable voltage Vdc2 is connected to half-bridge circuit 1104B.

[0178] In some embodiments, a predetermined number of FETs are integrated onto a single chip. For example, two FETs from one half-bridge circuit are integrated onto one chip, and two FETs from another half-bridge circuit are integrated onto a different chip. As another example, four of an FET subcircuit are integrated onto one chip, and four FET subcircuits from another set are integrated onto a different chip.

[0179] Figure 11B shows one embodiment of system 1150 to illustrate the use of a tree 1156 of FETs 318A, 318B, 318C, 318D, 318E, and 318F to generate an amplified rectangular waveform at output O1. System 1150 is the same as system 300 in Figure 3A or system 348 in Figure 3B, except that system 1150 uses a larger number of FETs than those used in system 300 or 348. Furthermore, system 1150 uses a gate drive circuit 1158 instead of gate driver 311 (Figures 3A, 3B, and 3D). The gate drive circuit 1158 is used in place of gate driver 311 (Figures 3A, 3B, and 3D) within a matchless plasma source 102 (Figure 1). Furthermore, instead of the half-bridge FET circuit 318 (Figures 3A, 3B, and 3D), a tree 1156 is used within the matchless plasma source 102.

[0180] System 1150 comprises a gate drive circuit 1158, a tree 1156, a capacitor 322A, and an electrode 106. The gate drive circuit 1158 comprises gate drivers 1152A and 1152B. Gate driver 1152B functions as a NOT gate. The inputs of gate drivers 1152A and 1152B are connected to a signal generator 306 (Figures 3A, 3B, and 3D). Furthermore, the output of gate driver 1152A is connected to the gate terminals of FETs 318A to 318C. Also, the voltage supply terminal of gate driver 1152A is connected to output O1. Similarly, the output of gate driver 1152B is connected to the gate terminals of FETs 318D to 318F, and the voltage supply terminal of gate driver 1152B is connected to ground potential.

[0181] The drain terminal D of FET318A is connected to DC voltage source 1154A, the drain terminal D of FET318B is connected to another DC voltage source 1154B, and the drain terminal of FET318C is connected to yet another DC voltage source 1154C. The source terminals of FET318A, 318B, and 318C are connected to output O1. Furthermore, the source terminals of FET318D, 318E, and 318F are connected to ground potential. The drain terminals of FET318D, 318E, and 318F are connected to output O1.

[0182] Note that FETs 318A and 318F form a half-bridge circuit. Similarly, FETs 318B and 318E form another half-bridge circuit. Furthermore, FETs 318C and 318D form yet another half-bridge circuit.

[0183] The square wave signal generated by the signal generator 306 is received by the gate driver 1152A and amplified to generate the gate drive signal 1160A. Similarly, the square wave signal generated by the signal generator 306 is received by the gate driver 1152B and amplified to generate the gate drive signal 1160B, which is pulsed with an inverse pulse relative to the gate drive signal 1160A. For example, during a time or time interval in which the gate drive signal 1160A is at a high level (e.g., a high power level), the gate drive signal 1160B is at a low level (e.g., a low power level). Furthermore, during a time or time interval in which the gate drive signal 1160A is at a low level (e.g., a low power level), the gate drive signal 1160B is at a high level (e.g., high power). As another example, during a time or time interval in which the gate drive signal 1160A transitions from a low level to a high level, the gate drive signal 1160B transitions from a high level to a low level. Similarly, during the time interval in which the gate drive signal 1160A transitions from a high level to a low level, the gate drive signal 1160B transitions from a low level to a high level.

[0184] The gate drive signal 1160A is supplied from the output of the gate driver 1152A to the gate terminals of FETs 318A to 318C. Furthermore, the gate drive signal 1160B is supplied from the output of the gate driver 1152B to the gate terminals of FETs 318D to 318F. Since the gate drive signal 1160B is an inverse pulse to the gate drive signal 1160A, FETs 318D, 318E, and 318F are off during the time intervals when FETs 318A, 318B, and 318C are on. Conversely, FETs 318D, 318E, and 318F are on during the time intervals when FETs 318A, 318B, and 318C are off.

[0185] Furthermore, the controller 304 (Figures 3A, 3B, and 3D) is connected to voltage source 1154A via a conductor, to voltage source 1154B via a conductor, and to voltage source 1154C via a conductor. The controller 304 provides voltage values ​​to voltage sources 1154A to 1154C. During push mode, upon receiving a voltage value, voltage source 1154A generates a voltage signal, which is transferred to output O1 via FET 318A when ON. Similarly, during push mode, upon receiving a voltage value, voltage source 1154B generates a voltage signal, which is transferred to output O1 via FET 318B when ON. Also, during push mode, upon receiving a voltage value, voltage source 1154C generates a voltage signal, which is transferred to output O1 via FET 318C when ON. When FETs 318A to 318C are in push mode, a positive voltage is generated at output O1.

[0186] The controller 304 shapes the envelope of the amplified rectangular waveform provided at the output by changing the voltage values ​​supplied to the voltage sources 1154A~1154C. For example, an amplified rectangular waveform having an envelope of arbitrary shape, a multi-state pulse shape envelope, or a continuous waveform shape envelope is generated at output O1 based on the rate of change of the voltage values ​​supplied to the voltage sources 1154A~1154C. For example, to generate a multi-state pulse shape envelope, the voltage value is changed instantaneously by the controller 304. As another example, to generate a triangular pulse envelope, the voltage value is changed periodically in a common direction (increasing or decreasing direction) by the controller 304 during a set time interval. As yet another example, to generate an envelope of arbitrary waveform, the voltage value is changed instantaneously and randomly in a common direction periodically.

[0187] Furthermore, in pull mode, FETs 318A~318C are turned off by gate drive signal 1160A, and FETs 318D~318F are turned on by gate drive signal 1160B. A negative voltage is generated at output O1 during the time interval when FETs 318A~318C are turned off and FETs 318D~318F are turned on. The amplified rectangular waveform is generated at output O1 by operating FETs 318A~318F in push-pull mode. The amplified rectangular waveform is transferred to capacitor 322A via output O1.

[0188] Note that in some embodiments, diodes are optionally connected in parallel between the drain and source terminals of the FETs in tree 1156. For example, diode D1 is connected between the drain and source terminals of FET 318A. Similarly, diode D2 is connected between the drain and source terminals of FET 318B, diode D3 is connected between the drain and source terminals of FET 318C, and diode D4 is connected between the drain and source terminals of FET 318D. Also, diode D5 is connected between the drain and source terminals of FET 318E, and diode D6 is connected between the drain and source terminals of FET 318F. Diodes D1-D3 limit the positive voltage at output O1, and diodes D4-D6 limit the negative voltage at output O1.

[0189] While Tree 1156 shows six FETs, it should be noted that in some embodiments, half-bridge circuits of any other number of FETs may be used. For example, instead of three half-bridge circuits, four, five, six, or ten half-bridge circuits may be used.

[0190] Figure 11C is a diagram of one embodiment of system 1170 illustrating the use of an H-bridge circuit 1172 for supplying power to electrode 106. The H-bridge circuit 1172 is used in place of a half-bridge circuit. System 1170 comprises a voltage source Vdc, a capacitor 1174, FETs 318A-318D, gate drivers 1152A and 1152B, gate driver 1152C, and gate driver 1152D. Gate driver 1152C is the same as gate driver 1152B (having the same structure and function, etc.), and gate driver 1152D is the same as gate driver 1152A.

[0191] System 1170 further comprises several diodes D5, D6, D7, and D8. Diode D5 is connected between the drain and gate terminals of FET318A. Similarly, diode D6 is connected between the drain and gate terminals of FET318B. Furthermore, diode D7 is connected between the drain and gate terminals of FET318C, and diode D8 is connected between the drain and gate terminals of FET318D.

[0192] Furthermore, the output of gate driver 1152A is connected to the gate terminal of FET 318A, and the output of gate driver 1152B is connected to the gate terminal of FET 318B. Similarly, the output of gate driver 1152C is connected to the gate terminal of FET 318C, and the output of gate driver 1152D is connected to the gate terminal of FET 318D. The inputs of gate drivers 1152A to 1152D are connected to the output of signal generator 306. Capacitor 322A and electrode 106 are connected between the source terminals of FETs 318A and 318C, and between the drain terminals of FETs 318B and 318D.

[0193] When FET318A and 318D are turned on, FET318B and 318C are turned off. For example, FET318A and 318D turn on when they receive gate drive signal 1160A. Furthermore, FET318B and 318C turn off when they receive gate drive signal 1160B. As another example, FET318A and 318D During the time or period in which the device is turned on, FET318B and 318C are turned off.

[0194] Similarly, when FETs 318B and 318C are turned on, FETs 318A and 318D are turned off. For example, FETs 318B and 318C are turned on upon receiving gate drive signal 1160B. Furthermore, FETs 318A and 318D are turned off upon receiving gate drive signal 1160B. As another example, FETs 318A and 318D are turned off at the time or during the period when FETs 318B and 318C are turned on.

[0195] When FETs 318A and 318D are turned on, current flows from the voltage source Vdc through FET 318A, capacitor 322A, electrode 106, and FET 318D to ground. Similarly, when FETs 318B and 318C are turned on, current flows from the voltage source Vdc through FET 318C, electrode 106, capacitor 322A, and FET 318B to ground. In this way, the current flows through electrode 106 in two opposite directions, generating positive and negative voltages across the terminals of electrode 106 during the clock cycle.

[0196] Figure 12A shows a system of cooling plates 1204 used to cool FET circuit boards 1202 (such as half-bridge or H-bridge circuit boards). 1200This is a diagram of one embodiment. A half-bridge FET circuit 318 (Figures 3A, 3B, and 3D) or an H-bridge circuit 1172 (Figure 11C) or a tree 1101 (Figure 11A) or a tree 1156 (Figure 11B) is connected to the FET circuit board 1202. The cooling plate 1204 is equipped with a coolant that passes through cooling pipes within the cooling plate 1204 to cool the FETs of the FET circuit board 1202 (FETs 318A~318F (Figures 3A, 3B, and 11B) or the FET in Figure 11A or the FET in Figure 11C, etc.).

[0197] In some embodiments, instead of the cooling plate 1204 being located beneath the FET circuit board 1202, the cooling plate 1204 is located above the FET circuit board 1202.

[0198] Figure 12B-1 is a side view showing one embodiment of system 1210 to illustrate the cooling of multiple integrated circuit chips 1214A, 1214B, and 1214C. System 1210 comprises a cooling plate 1212, a printed circuit board (PCB) 1216, and chips 1214A, 1214B, and 1214C. Each chip 1214A, 1214B, and 1214C comprises a circuit such as a half-bridge FET circuit 318 (Figures 3A, 3B, and 3D), an H-bridge circuit 1172 (Figure 11C), or a tree 1101 (Figure 11A), or a tree 1156 (Figure 11B). In some embodiments, each chip 1214A, 1214B, and 1214C comprises any number of transistors or any number of half-bridge circuits or H-bridge circuits or trees.

[0199] The cooling plate 1212 is connected to the printed circuit board 1216 and the chips 1214A, 1214B, and 1214C via a thermal paste 1218 (such as thermal grease or thermal compound) used to conduct heat. Each chip 1214A, 1214B, and 1214C is fitted into the printed circuit board 1216 through a notch in the board so that the chip makes contact with the cooling plate 1212. Furthermore, each chip 1214A, 1214B, and 1214C is electrically connected to the printed circuit board 1216 via multiple connectors at the edge of the chip. For example, the chips 1214A, 1214B, and 1214C are soldered to the printed circuit board 1216.

[0200] When a coolant (such as water) flows through one or more cooling channels (such as cooling pipes) within the cooling plate 1212, the cooling plate 1212 cools down by dissipating the heat generated by the transistors of chips 1214A, 1214B, and 1214C from the chips. There is an inlet for the coolant to enter and an outlet for the coolant to exit. of, Each cooling channel has Furthermore, the thermal paste 1218 helps to remove heat generated by the transistors in chips 1214A, 1214B, and 1214C from the chip.

[0201] Figure 12B-2 is an upper isometric view showing one embodiment of system 1211 to illustrate the cooling of integrated circuit chips 1214A, 1214B, and 1214C. System 1211 comprises a gate driver circuit 1158, system 1210, and reactance circuit 206. 1158 It is connected to the printed circuit board 1216 via multiple input connectors on the printed circuit board 1216. Furthermore, output O1 on the printed circuit board 1216 is connected to reactance circuit 206. Cooling plate 1212 is placed under the printed circuit board 1216 and thermal paste 1218It is coupled to the printed circuit board 1216 via (Figure 12B-1). Note that the cooling plate 1212, as well as the chips 1214A, 1214B, and 1214C, are arranged horizontally. For example, the cooling plate 1212 is in one horizontal plane, and the chips 1214A, 1214B, and 1214C are in another horizontal plane.

[0202] Figure 12C is an upper isometric view showing one embodiment of system 1220 to illustrate the cooling of integrated circuit chips 1214A, 1214B, and 1214C when the chips are mounted perpendicularly on a printed circuit board 1222. System 1220 comprises a printed circuit board 1222, a cooling plate 1226, and a circuit board 1224. Chips 1214A, 1214B, and 1214C are electrically connected to circuit board 1224, which is coupled to the printed circuit board 1222. Furthermore, the cooling plate 1226 is mounted perpendicularly to the printed circuit board 1222. There is a space between the circuit board 1224 and the cooling plate 1226. Cooling fluid cools the cooling plate 1226 through one or more cooling channels within the cooling plate 1226. When the cooling plate 1226 is cold, the heat generated by the chips 1214A, 1214B, and 1214C is transferred to areas away from the chips by conduction and convection.

[0203] Figure 12D is an upper isometric view showing one embodiment of system 1230 to illustrate the cooling of integrated circuit chips 1214A, 1214B, and 1214C when the cooling plate 1226 is positioned adjacent to the circuit board 1224. The cooling plate 1226 is mounted perpendicularly to the printed circuit board 1222 and coupled to the circuit board 1224 so as to be positioned next to the circuit board 1224. There is no space between the cooling plate 1226 and the circuit board 1224. The absence of space reduces any stray capacitance between the cooling plate 1226 and the circuit board 1224. The cooling plate 1226 is positioned to the left of the circuit board 1224, as shown in Figure 12D.

[0204] In various embodiments, the cooling plate 1226 and the circuit board 1224 To further promote the cooling of chips 1214A, 1214B, and 1214C by facilitating conduction between them, thermal paste 1218 (Figure 12B-1) is applied between the cooling plate 1226 and the circuit board 1224.

[0205] In some embodiments, the cooling plate 1226 is positioned adjacent to the right of the circuit board 1224, rather than to the left.

[0206] Figure 12E is a side view showing one embodiment of system 1240 to illustrate one embodiment for cooling chips 1214A, 1214B, and 1214C. System 1240 is a printed circuit board 1219 The package comprises an integrated circuit package 1242, a heatsink 1244, and a cooling fan 1246. The heatsink 1244 has multiple fins made of metal (such as aluminum). The package 1242 is a printed circuit board. 1219 The heatsink 1244 is coupled and positioned on the top surface of the package 1242. Additionally, the cooling fan 1246 is coupled and positioned on the heatsink 1244. Chips 1214A, 1214B, and 1214C are embedded within the package 1242.

[0207] The heat generated by chips 1214A, 1214B, and 1214C is removed from the chips via the heatsink 1244. In addition, a cooling fan 1246 is operated to remove heat from chips 1214A, 1214B, and 1214C.

[0208] In various embodiments, multiple cooling fans are used instead of one cooling fan 1246. In some embodiments, multiple heatsinks are used instead of one heatsink 1244.

[0209] Figure 12F is a side view showing one embodiment of system 1250 to illustrate another embodiment for cooling chips 1214A, 1214B, and 1214C. System 1250 is a printed circuit board 1219 The system comprises a package 1242, a heatsink 1244, and a cooling plate 1252. System 1250 is identical to system 1240 (Figure 12E), except that the cooling plate 1252 is positioned and coupled on the top surface of the heatsink 1244 instead of the cooling fan 1246 (Figure 12E).

[0210] The coolant is passed through one or more channels in the cooling plate 1252 to cool the cooling plate 1252. Once the cooling plate 1252 is cooled, the heat generated by the chips 1214A, 1214B, and 1214C is removed from the chips via the heatsink 1244 and the cooling plate 1252 to cool the chips.

[0211] Figure 12G is a side view showing one embodiment of system 1260 to illustrate yet another embodiment for cooling chips 1214A, 1214B, and 1214C. 1260 Printed circuit board 1219 The device comprises a package 1242 and a heatsink 1244. The heat generated by the chips 1214A, 1214B, and 1214C is transferred to the heatsink 1244 by conduction.

[0212] Figure 12H is a side view of one embodiment of system 1270, showing a cooling plate 1274 and a container 1272 with milled channels CH1 and CH2. The container 1272 houses a matchless plasma source 102 (Figure 1). For example, the matchless power plasma source 102 is placed on a printed circuit board within the container 1272. Part of channel CH1 is milled into the bottom surface of the container 1272, and the remaining part of channel CH1 is milled into the top surface of the cooling plate 1274. Similarly, part of channel CH2 is milled into the bottom surface of the container 1272, and the remaining part of channel CH2 is milled into the top surface of the cooling plate 1274. Each channel CH1 and CH2 is U-shaped.

[0213] Furthermore, an O-ring 1276A is attached to the bottom of the container 1272, and another O-ring 1276B is attached to the top of the cooling plate 1274. The container 1272 and the cooling plate 1274 are in contact with each other such that the O-rings 1276A and 1276B form a seal that seals the coolant in the flow paths CH1 and CH2. The coolant is used to cool the powered components, such as the half-bridge circuit 318 (Figures 3A, 3B, and 3D) or the H-bridge circuit 1172 (Figure 11C) or the tree 1101 (Figure 11A) or the tree 1156 (Figure 11B).

[0214] In some embodiments, each channel CH1 and CH2 has a shape other than U-shaped. In various embodiments, any number of channels are milled into the container 1272 and cooling plate 1274. For example, instead of each U-shaped channel CH1 and CH2, four linear channels are formed within the container 1272 and cooling plate 1274.

[0215] Figure 13 is an isometric view of one embodiment of the cooling plate 1300. The cooling plate 1300 is an example of any of the cooling plates 1204 (Figure 12A), 1212 (Figures 12B-1 and 12B-2), 1226 (Figures 12C and 12D), and 1252 (Figure 12F). The cooling plate 1300 comprises a cooling channel 1304A (such as a pipe) and another cooling channel 1304B. Each cooling channel 1304A and 1304B has an inlet for receiving coolant and an outlet for releasing coolant. The cooling channels 1304A and 1304B are embedded in the body 1302 (such as a metal plate) of the cooling plate 1300.

[0216] In some embodiments, instead of pipes, holes are drilled into the main body 1302 to form one or more flow paths within the cooling plate 1300 as passages for the coolant.

[0217] Smart cold plates are used in various embodiments. For example, the cold plate described herein is connected to a thermocouple. The thermocouple is further connected to a controller 304 (Figures 3A, 3B, and 3D) are connected. The signal from the thermocouple is sent to the controller. 304 It is sent to the controller. 304 The controller determines the temperature of the cold plate from the signal received from the thermocouple. 304 The smart cold plate is connected to a driver, which in turn is connected to the smart cold plate to control the temperature of the smart cold plate by controlling the flow of coolant into and out of one or more channels of the smart cold plate. Temperature control of the smart cold plate is used to control the temperature of half-bridge circuits located in the vicinity of the smart cold plate (adjacent or at a short distance, etc.). Such temperature control of the smart cold plate further reduces the possibility of corrosion of the smart cold plate and half-bridge circuits described herein by reducing the possibility of condensation.

[0218] Figure 14A shows one embodiment of system 1400 to illustrate the combined use of ICP chamber 1402 and matchless plasma source 102. Chamber 1402 comprises a TCP coil 1404, a dielectric window 1410, and a vacuum enclosure for chamber 1402. The dielectric window 1410 is located on top of the vacuum enclosure. The TCP coil 1404 is positioned above the dielectric window 1410.

[0219] The TCP coil 1404 is connected at one end to the matchless plasma source 102 and at the other end to ground potential or a capacitor. The capacitor at the other end is connected to ground potential. The vacuum enclosure further includes a substrate holder 1412 (such as an electrostatic chuck or lower electrode). The substrate holder 1412 is connected to the RF generator 1408 via an RF matching circuit 1406. The RF matching circuit used herein is described further below with reference to Figure 19. The RF generator used herein includes an RF power supply, which is an oscillator that generates a sinusoidal signal. This is in contrast to the signal generator 306 (Figures 3A, 3B, and 3D) that generates a square wave signal. The RF matching circuit 1406 is connected to the RF generator 1408 via an RF cable 1409.

[0220] The matchless plasma source 102 supplies a shaped sinusoidal waveform to the TCP coil 1404. Furthermore, the RF generator 1408 generates an RF signal (such as a sinusoidal signal) that is supplied to the RF matching circuit 1406. The RF matching circuit 1406 matches the impedance of the load connected to the output of the RF matching circuit 1406 (such as the substrate holder 1412 and plasma in the plasma chamber 1402) with the impedance of the source connected to the input of the RF matching circuit 1406 (such as the RF generator 1408 and RF cable 1409) in order to generate a modulated RF signal. In addition to supplying one or more processing gases into the gap between the substrate holder 1412 and the dielectric window 1410, once the shaped sinusoidal waveform is supplied to the TCP coil 1404 and the modulated RF signal is supplied to the substrate holder 1412, the plasma is lit or maintained in the vacuum enclosure to process the substrate 108 placed in the plasma chamber 1402. Examples of process gases include oxygen-containing gases, nitrogen-containing gases, and fluorine-containing gases.

[0221] Figure 14B shows one embodiment of System 1403 to illustrate the use of an ICP chamber 1402 in which a matchless plasma source 102 is connected to a substrate holder 1412 and a TCP coil 1404 is connected to an RF generator 1408 via an RF matching circuit 1406. The matchless plasma source 102 is connected to the substrate holder 1412 in which the substrate 108 is placed for processing via connection 110. Furthermore, the RF generator 1408 is connected to the TCP coil 1404 via RF cable 1409 and RF matching circuit 1406. In addition to supplying one or more processing gases into the gap between the substrate holder 1412 and the dielectric window 1410 to ignite or maintain the plasma in the plasma chamber 1402, a modulated RF signal is supplied from the RF matching circuit 1406 to the TCP RF coil 1404 and a shaped sinusoidal waveform is supplied from the matchless plasma source 102 to the substrate holder 1412.

[0222] Figure 14C shows an embodiment of system 1405 to illustrate another use of the ICP chamber 1402, in which a matchless plasma source 102 is connected to a substrate holder 1412 and another matchless plasma source 102 is connected to a TCP coil 1404. The matchless plasma source 102 supplies a shaped sinusoidal waveform to the TCP coil 1404, and the matchless plasma source 102 supplies a shaped sinusoidal waveform to the substrate holder 1412. In addition to supplying a shaped sinusoidal waveform to the TCP coil 1404, when one or more processing gases are supplied into the gap between the substrate holder 1412 and the dielectric window 1410, plasma is generated or maintained within the plasma chamber 1402.

[0223] It should be noted that in some embodiments, the matchless plasma source 102 connected to the TCP coil 1404 has a different number of transistors in its amplification circuit or tree compared to the number of transistors in the matchless plasma source 102 connected to the substrate holder 1412. For example, the number of half-bridge circuits in the matchless plasma source 102 connected to the TCP coil 1404 is different from the number of half-bridge circuits in the matchless plasma source 102 connected to the substrate holder 1412.

[0224] In various embodiments, the operating frequency of the matchless plasma source 102 connected to the TCP coil 1404 is different from the operating frequency of the matchless plasma source 102 connected to the substrate holder 1412.

[0225] In some embodiments, the operating frequency of the matchless plasma source 102 connected to the TCP coil 1404 is the same as the operating frequency of the matchless plasma source 102 connected to the substrate holder 1412.

[0226] Furthermore, please note that any of the systems 1400 (Figure 14A), 1403 (Figure 14B), or 1405 can be used for processing the substrate 108 (e.g., performing conductor etching).

[0227] Figure 14D is a diagram of one embodiment of system 1420 illustrating the connection of a matchless plasma source 102 to a Faraday shield 1422. System 1420 comprises an ICP plasma chamber 1424. The plasma chamber 1424 comprises a TCP coil 1404, a dielectric window 1410, a Faraday shield 1422, and a vacuum chamber. The Faraday shield 1422 is located below the dielectric window 1410. The matchless plasma source 102 is connected to the Faraday shield 1422 by supplying a shaped sinusoidal waveform to the Faraday shield 1422 to reduce the possibility of residual material from processing performed in the plasma chamber 1424 being deposited on the dielectric window 1410. As a result, the walls of the plasma chamber 1424 are protected from corrosion.

[0228] In some embodiments, the Faraday shield 1422 is positioned between the TCP coil 1404 and the dielectric window 1410.

[0229] Figure 14E is a diagram of one embodiment of system 1430 illustrating the multiplexing of TCP coil 1432A and another TCP coil 1432B. System 1430 comprises an ICP chamber 1434. The ICP chamber 1434 comprises a substrate holder 1412, a dielectric window 1410, and TCP coils 1432A and 1432B.

[0230] TCP coil 1432A is connected to a matchless power source 102, and TCP coil 1432B is connected to another matchless power source 102. The system 1430 further includes a controller 1436 connected to a matchless power source 102 and another matchless power source 102.

[0231] The matchless power sources 102 and other matchless power sources 102 are multiplexed with respect to each other. For example, at the time or time interval during which controller 1436 sends a signal to turn on the matchless power source 102 connected to TCP coil 1432A, controller 1436 also sends a signal to turn off the matchless power source 102 connected to TCP coil 1432B. Similarly, at the time or time interval during which controller 1436 sends a signal to turn on the matchless power source 102 connected to TCP coil 1432B, controller 1436 also sends a signal to turn off the matchless power source 102 connected to TCP coil 1432A.

[0232] Thus, when a matchless power source 102 connected to TCP coil 1432A supplies power to TCP coil 1432A, a matchless power source 102 connected to TCP coil 1432B does not supply power to TCP coil 1432B. Similarly, when a matchless power source 102 connected to TCP coil 1432B supplies power to TCP coil 1432B, a matchless power source 102 connected to TCP coil 1432A does not supply power to TCP coil 1432A. For example, during the period when power is supplied from a matchless power source 102 to TCP coil 1432A, another matchless power source 102 does not supply power to TCP coil 1432B. Similarly, during the period when power is supplied from a matchless power source 102 to TCP coil 1432B, another matchless power source 102 does not supply power to TCP coil 1432A.

[0233] In some embodiments, instead of performing a multiplexing operation in which a matchless power source 102 connected to TCP coil 1432A and another matchless power source 102 connected to another TCP coil 1432B are multiplexed, both matchless power sources are operated simultaneously. For example, when a matchless power source 102 connected to TCP coil 1432A supplies power to TCP coil 1432A, a matchless power source 102 connected to TCP coil 1432B also supplies power to TCP coil 1432B. For example, while power is being supplied from a matchless power source 102 to TCP coil 1432A, another matchless power source 102 also supplies power to TCP coil 1432B.

[0234] Figure 15A shows one embodiment of system 1500 to illustrate the combined use of a matchless plasma source 102 and a CCP chamber 1502. System 1500 comprises a CCP chamber 1502 and a matchless plasma source 102. The CCP chamber 1502 includes a substrate holder 1412 (such as an electrostatic chuck) and an upper electrode 1504 facing the substrate holder 1412. The substrate holder 1412 is connected to an RF generator 1408 via an RF matching circuit 1406. The matchless plasma source 102 supplies a shaped sinusoidal waveform to the upper electrode 1504 via a connection 110 to generate or maintain plasma within the plasma chamber 1502. Furthermore, a modulated RF signal is supplied from the RF matching circuit 1406 to the substrate holder 1412. Furthermore, when one or more processing gases are supplied to the gap between the substrate holder 1412 and the upper electrode 1504, in addition to the shaped sinusoidal waveform, plasma is generated or maintained within the CCP chamber 1502 to process the substrate 108 placed on top of the substrate holder 1412.

[0235] In some embodiments, instead of the substrate holder 1412 being connected to ground potential, the substrate holder 1412 is connected to an RF generator via an RF matching circuit. The RF generator generates an RF signal that is supplied to the RF matching circuit. The RF matching circuit modulates the RF signal to generate a modulated RF signal. The modulated RF signal is supplied to the substrate holder 1412 to generate or maintain plasma in the plasma chamber 1502.

[0236] In various embodiments, instead of being connected to an RF generator, the substrate holder 1412 is connected to ground potential.

[0237] Figure 15B shows one embodiment of the system 1510 to illustrate the use of a matchless plasma source 102 in a CCP chamber 1502 connected to a substrate holder 1412. Furthermore, the upper electrode 1504 is connected to ground potential. The matchless plasma source 102 supplies a shaped sinusoidal waveform to the substrate holder 1412 via connection 110. In addition to supplying a shaped sinusoidal waveform to the substrate 1412, plasma is generated or maintained within the CCP chamber 1502 when one or more processing gases are supplied into the gap between the substrate holder 1412 and the upper electrode 1504. The plasma is generated or maintained to process a substrate 108 placed on top of the substrate holder 1412.

[0238] In some embodiments, instead of the upper electrode 1504 being connected to ground potential, the upper electrode 1504 is connected to an RF generator via an RF matching circuit. The RF generator generates an RF signal that is supplied to the RF matching circuit. The RF matching circuit modulates the RF signal to generate a modulated RF signal. The modulated RF signal is supplied to the upper electrode 1504 to generate or maintain plasma in the plasma chamber 1502.

[0239] FIG. 15C is a diagram illustrating an embodiment of system 1520 for explaining the use of a matchless plasma source 102 in a CCP chamber 1502 where a matchless plasma source 102 is connected to a substrate holder 1412 and another matchless plasma source 102 is connected to an upper electrode 1504. The matchless plasma source 102 supplies a shaped sine wave to the substrate holder 1412 via connection 110, and the matchless plasma source 102 supplies a shaped sine wave to the upper electrode 1504 via connection 110. Further, in addition to supplying the shaped sine wave to the substrate holder 1412 and the upper electrode 1504, when one or more process gases are supplied to the gap between the substrate holder 1412 and the upper electrode 1504, plasma is generated or maintained within the CCP chamber 1502. The plasma is generated or maintained to process a substrate 108 disposed above the substrate holder 1412.

[0240] Note that any of systems 1500 (FIG. 15A), 1510 (FIG. 15B), or 1520 may be used for processing the substrate 108 (such as performing a dielectric etching operation, etc.).

[0241] FIG. 15D is a diagram illustrating an embodiment of system 1530 for explaining the connection of a matchless power source 102 and RF generators 1408 and 1534 to a substrate holder 1412 of a CCP chamber 1502. As an example, the operating frequency of the matchless power source 102 is different from the operating frequency of RF power generator 1408, and the operating frequency of RF power generator 1408 is different from the operating frequency of RF power generator 1534. By way of example, the operating frequency of the matchless plasma source 102 is 400 kHz, the operating frequency of RF power generator 1408 is 2 MHz or 13.56 MHz or 27 MHz, and the operating frequency of RF power generator 1534 is 60 MHz. Each of RF power generators 1408 and 1534 includes an oscillator that generates a sine wave for supplying RF power to the substrate holder 1412. Neither RF power generator 1408 nor 1534 has a signal generator 306 (FIGS. 3A, 3B, and 3D).

[0242] The matchless power source 102 supplies a shaped sine wave to the substrate holder 1412. Further, the RF power generators 1408 and 1534 supply RF power to the substrate holder 1412 to process the substrate 108.

[0243] FIG. 15E is a diagram showing an embodiment of the system 1540 for explaining the connection of the matchless power source 102 and the RF power generators 1408 and 1534 to the upper electrode 1504 of the CCP chamber 1502. The matchless power source 102 supplies a shaped sine wave to the upper electrode 1504. Further, the RF power generators 1408 and 1534 supply RF power to the upper electrode 1504 to process the substrate 108.

[0244] FIG. 15F is a diagram showing an embodiment of the system 1550 for explaining the connection of the matchless power source 102 and the RF power generators 1408 and 1534 to the substrate holder 1412 of the CCP chamber 1502 and further explaining the connection of the matchless power source 102 and the RF power generators 1408 and 1534 to the upper electrode 1504 of the CCP chamber 1502. The matchless power source 102 supplies a shaped sine wave to the upper electrode 1504. Also, another matchless power source 102 、 supplies a shaped sine wave to the substrate holder 1412. Further, to process the substrate 108, the RF power generators 1408 and 1534 supply RF power to the upper electrode 1504, and another set of RF power generators 1408 and 1534 supply RF power to the substrate holder 1412.

[0245] In some embodiments, the substrate holder 1412 is connected to a plurality of matchless plasma sources, and each matchless plasma source is the matchless plasma source 102. Each of the matchless plasma sources has a different operating frequency. For example, the first matchless plasma source among the matchless plasma sources has an operating frequency of 400 kHz or 2 MHz. The second matchless plasma source among the matchless plasma sources has an operating frequency of 27 MHz, and the third matchless plasma source among the matchless plasma sources has an operating frequency of 60 MHz.

[0246] In various embodiments, the upper electrode 1504 is connected to a plurality of matchless plasma sources, each of which is a matchless plasma source 102. Each of the matchless plasma sources has a different operating frequency, as described above.

[0247] In some embodiments, the upper electrode 1504 is connected to a plurality of matchless plasma sources, each of which is a matchless plasma source 102. Furthermore, the substrate holder 1412 is connected to a plurality of matchless plasma sources, each of which is a matchless plasma source 102. Each of the matchless plasma sources connected to the substrate holder 1412 has a different operating frequency, as described above. Similarly, each of the matchless plasma sources connected to the upper electrode 1504 has a different operating frequency, as described above.

[0248] Figure 16A shows one embodiment of system 1600 to illustrate a plasma chamber 1602 having a showerhead 1604 connected to a matchless plasma source 102. System 1600 comprises a plasma chamber 1602 and a matchless plasma source 102. The plasma chamber 1602 has a showerhead 1604 and a substrate holder 1412, the substrate holder 1412 being connected to ground potential. The showerhead 1604 has multiple openings to allow process materials (such as process gases or liquid materials, or metallic materials) to pass through the gap between the showerhead 1604 and the substrate holder 1412 for processing a substrate 108. For example, the showerhead 1604 is used to perform atomic layer deposition or chemical deposition on a substrate 108. When one or more process materials are supplied to the gap between the substrate holder 1412 and the showerhead 1604, in addition to supplying a shaped sinusoidal waveform to the upper electrode in the showerhead 1604, plasma is generated or maintained within the plasma chamber 1602. Plasma is generated or maintained to process the substrate 108, which is positioned on top of the substrate holder 1412.

[0249] In some embodiments, instead of the substrate holder 1412 of the plasma chamber 1602 being connected to ground potential, the substrate holder 1412 is connected to an RF generator via an RF matching circuit. The RF generator generates an RF signal that is supplied to the RF matching circuit. The RF matching circuit modulates the RF signal to generate a modulated RF signal. The modulated RF signal is supplied to the substrate holder 1412 in the plasma chamber 1602 to generate or maintain plasma within the plasma chamber 1602.

[0250] Figure 16B shows one embodiment of system 1610 to illustrate the connection of a matchless plasma source 102 to a substrate holder 1412 instead of a connection to a showerhead 1604. System 1610 comprises a plasma chamber 1602. The matchless plasma source 102 is connected to the substrate holder 1412 via a connection 110, and the showerhead 1604 is connected to ground potential. Furthermore, in addition to supplying a shaped sinusoidal waveform to the substrate holder 1412, when one or more process materials are supplied into the gap between the substrate holder 1412 and the showerhead 1604, plasma is generated or maintained within the plasma chamber 1602. The plasma is generated or maintained to process a substrate 108 located on top of the substrate holder 1412.

[0251] In some embodiments, instead of the upper electrode in the showerhead 1604 being connected to ground potential, the upper electrode is connected to an RF generator via an RF matching circuit. The RF generator generates an RF signal that is supplied to the RF matching circuit. The RF matching circuit modulates the RF signal to generate a modulated RF signal. The modulated RF signal is supplied to the upper electrode in the showerhead 1604 to generate or maintain plasma in the plasma chamber 1602.

[0252] Figure 16C shows an embodiment of system 1620 to illustrate the connection of a matchless plasma source 102 to a substrate holder 1412 and another matchless plasma source 102 to a showerhead 1604. System 1620 comprises a plurality of matchless plasma sources 102 and a plasma chamber 1602. The matchless plasma sources 102 supply a shaped sinusoidal waveform to the substrate holder 1412 via a connection 110, and the matchless plasma sources 102 supply a shaped sinusoidal waveform to the upper electrode of the showerhead 1604 via the connection 110. In addition to supplying a shaped sinusoidal waveform to the upper electrode in the showerhead 1604 and the substrate holder 1412, plasma is generated or maintained in the plasma chamber 1602 when one or more process materials are supplied into the gap between the substrate holder 1412 and the showerhead 1604. The plasma is generated or maintained to process a substrate 108 located on top of the substrate holder 1412.

[0253] Figure 17A shows one embodiment of system 1700 to illustrate the connection of multiple matchless plasma sources (such as matchless plasma source 102) to multiple microsources 1704A, 1704B, 1704C, and 1704D. System 1700 comprises multiple matchless plasma sources and a plasma chamber 1703. The plasma chamber 1703 comprises multiple microsources 1704A to 1704D and a vacuum chamber 1702. Matchless plasma source 102 is connected to the electrodes of microsource 1704A, and another matchless plasma source 102 is connected to the electrodes of microsource 1704B. Similarly, yet another matchless plasma source 102 is connected to the electrodes of microsource 1704C, and yet another matchless plasma source 102 is connected to the electrodes of microsource 1704D. Each of the microsources 1704A to 1704D is an enclosure for forming plasma within the enclosure.

[0254] When one or more processing gases and a shaped sinusoidal waveform are supplied to the microsource 1704A, plasma is generated within the microsource 1704A and supplied to the vacuum chamber 1702 through the opening between the microsource 1704A and the vacuum chamber 1702. Furthermore, when one or more processing gases and a shaped sinusoidal waveform are supplied to the microsource 1704B, plasma is generated within the microsource 1704B and supplied to the vacuum chamber 1702 through the opening between the microsource 1704B and the vacuum chamber 1702. Similarly, the microsources 1704C and 1704D The plasma generated inside is supplied to the vacuum chamber 1702.

[0255] The vacuum chamber 1702 includes a substrate holder 1412 on which the substrate 108 is placed. Plasma entering the vacuum chamber 1702 from microsources 1704A to 1704D is used to process the substrate 108.

[0256] Figure 17B shows one embodiment of system 1710, illustrating the connection of the substrate holder 1412 to the RF generator 1408 and the matchless plasma source 102. System 1710 comprises microsources 1704A, 1704B, 1704C, and 1704D, and a plasma chamber 1703.

[0257] Furthermore, in system 1710, the RF generator 1408 is connected to the board holder 1412, and the matchless power source 102 is also connected to the board holder 1412. The operating frequency of the matchless power source 102 connected to the board holder 1412 is different from the operating frequency of the RF generator 1408. For example, if the matchless power source 102 connected to the board holder 1412 is operating at a frequency of 400 kHz or 2 MHz, the RF generator 1408 is operating at a frequency of 13.56 MHz, 27 MHz, or 60 MHz. As another example, if the matchless power source 102 connected to the board holder 1412 is operating at a frequency of 13.56 MHz, 27 MHz, or 60 MHz, the RF generator 1408 is operating at a frequency of 400 kHz or 2 MHz. To process the substrate 108 within the plasma chamber 1703, the matchless power source 102 supplies an amplified rectangular waveform to the substrate holder 1412, and the RF power generator 1408 supplies RF power to the substrate holder 1412.

[0258] Figure 17C shows one embodiment of system 1720, illustrating the provision of RF power from a matchless plasma source 102 to grids 1726A and 1726B in chuck 1722, and from an RF generator 1408 to the cathode of chuck 1722. System 1720 comprises a plasma chamber 1730, an RF generator 1408, a matchless plasma source 102, another RF generator 1408, and another matchless plasma source 102. The plasma chamber 1730 comprises an inner TCP coil 1724A and an outer TCP coil 1724B. Furthermore, the plasma chamber 1730 comprises a chuck 1722 (such as an electrostatic chuck).

[0259] An RF generator 1408 is connected to an inner TCP coil 1724A, and a matchless plasma source is connected to an outer TCP coil 1724B. Furthermore, a matchless power source 102 is connected to the grid 1726A of the chuck 1722, and another matchless power source 102 is connected to the grid 1726B. Another RF generator 1408 is connected to the cathode of the chuck 1722.

[0260] The RF generator 1408 supplies RF power to the inner TCP coil 1724A. Furthermore, the matchless plasma source 102 connected to the outer TCP coil 1724B supplies an amplified rectangular waveform to the outer TCP coil 1724B. Furthermore, the matchless power source 102 connected to the grid 1726A supplies an amplified rectangular waveform to the grid 1726A. In addition, the matchless power source 102 connected to the grid 1726B supplies an amplified rectangular waveform to the grid 1726B. In addition, the RF generator 1408 connected to the cathode supplies RF power to the cathode in order to process the substrate 108.

[0261] Figure 18 shows a matchless plasma. source This figure shows an enclosure 1802 used to house 102, representing one embodiment of system 1800. System 1800 comprises the enclosure 1802 and a plasma chamber 1803. Examples of plasma chambers 1803 include plasma chamber 104 (Figure 1), ICP chamber 1402 (Figures 14A-14C), ICP chamber 1424 (Figure 14B), CCP chamber 1502 (Figures 15A-15C), and plasma chamber 1602 (Figures 16A-16C), as well as plasma chamber 1703 shown in Figure 17A. The enclosure 1802 is, for example, comparable in size to a central processing unit (CPU) housing or shoebox.

[0262] Furthermore, the system 1800 includes a network 1810, a server 1812, and a control terminal 1814. The enclosure 1802 is a container for housing the printed circuit board 1808. A plurality of chips 1804A, 1804B, and 1804C are connected to the printed circuit board 1808. The chip 1804A has a controller board 302 (FIGS. 3A, 3B, and 3D). Furthermore, the chip 1804 has a gate driver, such as a gate driver 311 (FIGS. 3A, 3B, and 3D) or a gate drive circuit 1158 (FIG. 11B) or gate drivers 1152A - 1152D (FIG. 11C). Furthermore, the chip 1804C has a half - bridge FET circuit 318 (FIGS. 3A, 3B, and 3D), an H - bridge circuit 1172 (FIG. 11C), a tree 1101 (FIG. 11A), or a tree 1156 (FIG. 11B).

[0263] Examples of the network 1810 include computer networks such as the Internet, an intranet, or a combination thereof. Examples of the control terminal 1814 include computers such as a laptop, a desktop, a tablet, or a smartphone. The control terminal 1814 is connected to a plurality of enclosures (such as the enclosure 1802) via the server 1812 and the network 1810 to control a plurality of plasma chambers via a plurality of enclosures.

[0264] Note that the size of the enclosure 1802 is much smaller compared to the sizes of the housing of the RF generator and the housing of the RF matching circuit. The reduction in the size of the enclosure 1802 leads to cost savings in addition to the savings in the space utilized.

[0265] A cooling plate 1806 provides cooling to the chip 1804C. The cooling plate 1806 is disposed below or above the chip 1804C. For example, the cooling plate 1806 is coupled to the chip 1804C via a thermal paste.

[0266] In some embodiments, the controller board 302 and the gate driver are located on the same chip. Furthermore, in various embodiments, the gate driver and one of the half-bridge FET circuit 318, tree 1101, and tree 1156 are located on the same chip.

[0267] Figure 19 is a block diagram of one embodiment of system 1902, showing an RF cable 1908 and an RF matching circuit 1906. An example of the RF cable 1908 is a coaxial cable. An example of the RF matching circuit 1906 is an impedance matcher, impedance matching circuit, or impedance matching network. The RF matching circuit 1906 has multiple circuit elements, such as inductors, capacitors, resistors, or combinations thereof. System 1902 further comprises an RF generator 1904 and a plasma chamber 1910 having electrodes 1912.

[0268] The RF generator 1904 is equipped with an RF power supply that generates an RF signal, which is a sinusoidal signal. The sinusoidal RF signal is supplied to the RF matching circuit 1906 via the RF cable 1908. The RF matching circuit 1906 matches the impedance of a load connected to the output of the RF matching circuit 1906 (such as the plasma chamber 1910) with the impedance of a source connected to the input of the RF matching circuit 1906 (such as the RF generator 1904 and RF cable 1908) in order to generate a modulated RF signal. The modulated RF signal is supplied to the electrode 1912. System 100 (Figure 1) does not have an RF cable 1908 and an RF matching circuit 1906 between the matchless plasma source 102 and the plasma chamber 104, thereby reducing the possibility of power being reflected from the plasma chamber 104 to the RF source 102 (Figure 1) via the RF matching circuit 1906 and RF cable 1908.

[0269] The embodiments described herein may be implemented in a variety of computer system configurations, including handheld hardware units, microprocessor systems, microprocessor-based or programmable consumer electronics, minicomputers, and mainframe computers. The embodiments described herein may also be implemented in a distributed computing environment in which tasks are performed by remote processing hardware units connected through a computer network.

[0270] In some embodiments, a controller (e.g., a host system) is part of the system, and the system may be part of the examples described above. The system comprises a semiconductor processing apparatus, including one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (e.g., wafer pedestals, gas flow systems). The system is integrated with electronics for controlling the operation of the system before, during, and after processing of semiconductor wafers or substrates. The electronics may also be called “controllers” and can control various components or sub-components of the system. Depending on the processing requirements and / or the type of system, the controller is programmed to control any processing disclosed herein, such as supplying processing gases, setting temperature (e.g., heating and / or cooling), setting pressure, setting vacuum, setting power, setting RF generator settings, setting RF matching circuit settings, setting frequency, setting flow rate, setting fluid supply, setting position and operation, and moving wafers in and out of tools and other moving tools and / or load locks connected to or coupled to the system.

[0271] Generally, in various embodiments, a controller is defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), application-specific integrated circuits (ASICs), programmable logic devices (PLDs), one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions are instructions that are communicated to the controller in the form of various individual settings (or program files) that define operating parameters for performing operations on or for semiconductor wafers. Operating parameters are, in some embodiments, part of a recipe defined by a processing engineer to achieve one or more processing steps during the processing of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0272] In some embodiments, the controller is part of or connected to a computer, such computer is integrated with the system, connected to the system, networked with the system in other ways, or combined with the system. For example, the controller is in the “cloud” or is all or part of a fab host computer system that enables remote access for wafer processing. The controller enables remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, or examine trends or performance metrics from multiple manufacturing operations in order to change the parameters of the current operation, set up a processing step according to the current operation, or start a new operation.

[0273] In some embodiments, a remote computer (e.g., a server) provides processing recipes to the system via a computer network (including a local network or the Internet). The remote computer has a user interface that allows input or programming of parameters and / or settings, which are communicated from the remote computer to the system. In some examples, a controller receives instructions in the form of settings for processing a wafer. It should be understood that the settings are specific to the type of processing to be performed on the wafer, as well as the type of tools the controller interfaces with or controls. Thus, as described above, the controller is distributed, for example, by comprising one or more separate controllers that are networked and operate toward a common purpose (such as the processing to be performed as described herein). An example of a distributed controller for such a purpose includes one or more integrated circuits on a chamber that communicate with one or more remotely located integrated circuits (such as being at the platform level or located as part of a remote computer) that cooperate to control processing in the chamber.

[0274] In various embodiments, the system may include, but is not limited to, plasma etching chambers, deposition chambers, spin rinse chambers, metal plating chambers, cleaning chambers, bevel edge etching chambers, physical vapor deposition (PVD) chambers, chemical vapor deposition (CVD) chambers, atomic layer deposition (ALD) chambers, atomic layer etching (ALE) chambers, ion implantation chambers, and any other semiconductor processing systems related to or used in the processing and / or manufacturing of semiconductor wafers.

[0275] While the above-described operation is explained with reference to a transformer-coupled plasma (TCP) reactor, it should also be noted that in some embodiments, the above-described operation applies to other types of plasma chambers (e.g., conductive tools).

[0276] As described above, depending on the processing operations performed by the tool, the controller communicates with one or more of the following: other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, the main computer, another controller, or tool locations within the semiconductor manufacturing plant and / or tools used for material transport to and from load ports to carry wafer containers.

[0277] With the above embodiments in mind, it should be understood that some of the embodiments utilize various operations performed by a computer, including data stored in a computer system. These operations performed by a computer deal with physical quantities.

[0278] Some embodiments further relate to hardware units or devices for performing these operations. The devices are specifically configured for dedicated computers. When defined as a dedicated computer, the computer can operate for a particular purpose while performing other processes, program executions, or routines not included in the particular purpose.

[0279] In some embodiments, the operations described herein are processed on a computer selectively activated or configured by one or more computer programs stored in computer memory or retrieved via a computer network. Once data is retrieved via a computer network, that data may be processed by other computers on the computer network (e.g., a cloud of computing resources).

[0280] One or more embodiments described herein may be manufactured as computer-readable code on a non-temporary computer-readable medium. A non-temporary computer-readable medium is any data storage hardware unit (e.g., a memory device) that stores data which is then read by a computer system. Examples of non-temporary computer-readable media include hard drives, network-attached storage (NAS), ROM, RAM, compact disc-ROM (CD-ROM), CD-recordable (CD-R), CD-rewritable (CD-RW), magnetic tape, and other optical and non-optical data storage hardware units. In some embodiments, the non-temporary computer-readable medium includes a computer-readable tangible medium distributed across a network-attached computer system so that the computer-readable code is stored and executed in a distributed manner.

[0281] While some of the method operations described above are presented in a specific order, it should be understood that in various embodiments, other housekeeping processes may be performed between method operations, or the method operations may be distributed to a system that allows method operations to occur at slightly different times or at various intervals, or they may be arranged to be performed in a different order than described above.

[0282] Furthermore, it should be noted that in one embodiment, one or more features of any embodiment described herein may be combined with one or more features of any other embodiment without departing from the scope of the various embodiments described herein.

[0283] To enhance understanding, this embodiment has been described in some detail, but it is clear that some modifications and variations may be made within the scope of the appended claims. Therefore, this embodiment is considered illustrative and not limiting, and the embodiment is not limited to the details shown herein and may be modified within the scope of the appended claims and equivalents. The present invention can also be realized in the following embodiments, for example. Application Example 1: A matchless plasma source for supplying radio frequency (RF) power to electrodes of a plasma chamber used for processing substrates, Controller and A signal generator configured to provide an input RF signal at an operating frequency corresponding to the setting by the controller, A gate driver configured to receive the input RF signal and generate a plurality of square wave signals, An amplification circuit configured to receive the square wave signal from the gate driver and generate an amplified square wave, wherein the amplification circuit has an agile DC rail connected to the controller, The controller is configured to set a voltage value for the agile DC rail in order to cause the amplification circuit to output the amplified rectangular waveform with a shaped envelope defined by a shaped voltage signal, and includes an amplification circuit. A reactance circuit configured to extract a shaped sinusoidal waveform from the amplified rectangular waveform, wherein the shaped sinusoidal waveform is output based on the shaped envelope defined by the shaped voltage signal, To generate plasma for the processing of the substrate, an electrode configured to receive RF power from the shaped sinusoidal waveform is provided, A matchless plasma source equipped with a spectroscopy system. Application example 2: A matchless plasma source according to Application Example 1, wherein each of the rectangular wave signals received from the gate driver is a pulsed waveform that pulses between a low level and a high level at the operating frequency. Application Example 3: A matchless plasma source according to Application Example 1, wherein the amplification circuit is a half-bridge transistor circuit or a full-bridge H circuit, and the electrode is an antenna. Application Example 4: A matchless plasma source according to Application Example 3, wherein the half-bridge transistor circuit comprises a plurality of field-effect transistors or a plurality of insulated-gate bipolar transistors. Application Example 5: A matchless plasma source according to Application Example 4, wherein the field-effect transistor is cooled by a cooling plate. Application example 6: A matchless plasma source according to Application Example 4, wherein the field-effect transistors are arranged in a push-pull configuration, and in the push-pull configuration, the first field-effect transistor among the field-effect transistors is on when the second field-effect transistor among the field-effect transistors is off, and the second field-effect transistor is on when the first field-effect transistor is off. Application example 7: A matchless plasma source of application example 4, wherein the field-effect transistor has a resistor that allows instantaneous on / off switching of the field-effect transistor in order to reduce on / off delay. Application Example 8: A matchless plasma source of Application Example 7, wherein one of the field-effect transistors is turned on during the period in which another of the field-effect transistors is turned off, and the other of the field-effect transistors is turned on during the period in which one of the field-effect transistors is turned off. Application example 9: A matchless plasma source according to Application Example 4, wherein the field-effect transistor is fabricated from at least one of silicon carbide and gallium nitride. Application Example 10: A matchless plasma source according to Application Example 1, wherein the amplification circuit comprises a tree of transistors, the tree being sized to achieve a desired power level. Application Example 11: A matchless plasma source according to Application Example 1, wherein the agile DC rail has a DC voltage source, the amplification circuit comprises a half-bridge transistor circuit having a plurality of field-effect transistors, and the agile DC rail is connected to the source terminal or drain terminal of the plurality of field-effect transistors depending on whether the field-effect transistors are p-type or n-type. Application Example 12: A matchless plasma source of Application Example 1, wherein the agile DC rail has a DC voltage source configured to generate the shaping voltage signal having the voltage value for shaping the amplified rectangular waveform according to the shaping voltage signal. Application Example 13: A matchless plasma source according to Application Example 1, wherein the amplified rectangular waveform is shaped to have the shaping envelope. Application Example 14: A matchless plasma source according to Application Example 1, wherein the shaping envelope is a multi-state pulse-shaped envelope, a triangular envelope, a continuous-shaped envelope, or an envelope of arbitrary shape. Application Example 15: A matchless plasma source according to Application Example 1, wherein the reactance circuit has reactance configured to reduce the reactance of the electrodes, the reactance of the plasma when formed in the plasma chamber, the reactance of the connections connecting the reactance circuit to the electrodes, or a combination thereof. Application Example 16: A matchless plasma source according to Application Example 1, wherein the reactance circuit has a quality factor for removing higher-order harmonics of the amplified rectangular waveform to generate a fundamental waveform, and the shaped sinusoidal waveform is the fundamental waveform having the shaped envelope. Application Example 17: A matchless plasma source according to Application Example 1, wherein there is no RF cable and RF matching circuit in the connection between the reactance circuit and the electrode. Application Example 18: A matchless plasma source of Application Example 1, further comprising a voltage / current probe configured to measure the complex voltage and complex current at the output of the amplification circuit, as well as the phase difference between the complex voltage and the complex current, A matchless plasma source, wherein the controller is configured to control the operating frequency of the signal generator in order to reduce the phase difference and control the power of the shaped sinusoidal waveform. Application Example 19: A matchless plasma source of Application Example 18, wherein the DC agile rail comprises a DC voltage source, and the controller is configured to control the DC voltage source to control the voltage of the shaped sinusoidal waveform, the current of the shaped sinusoidal waveform, or the power of the shaped sinusoidal waveform. Application Example 20: The matchless plasma source of Application Example 1, further, A voltage probe configured to measure a complex voltage at the output of the amplification circuit, A current probe configured to measure a complex current on the connection between the reactance circuit and the electrode, Equipped with, A matchless plasma source, wherein the controller is configured to calculate the phase difference between the complex voltage and the complex current, and the controller is configured to control the operating frequency of the signal generator in order to reduce the phase difference and control the power of the shaped sinusoidal waveform. Application Example 21: A matchless plasma source of application example 20, wherein the DC agile rail comprises a DC voltage source, and the controller is configured to control the DC voltage source to control the voltage of the shaped sinusoidal waveform, the current of the shaped sinusoidal waveform, or the power of the shaped sinusoidal waveform. Application Example 22: The matchless plasma source of Application Example 1 further comprises an arbitrary waveform generator configured to generate a shaping control signal in order to facilitate the generation of the shaping envelope of any shape based on the voltage value, The shaping control signal shapes the amplified rectangular waveform according to the shaping envelope, and is a matchless plasma source. Application Example 23: A matchless plasma source of application example 22, wherein the arbitrary shape has a plurality of inclinations of the shaping envelope, and the plurality of inclinations change from one state to another in a controlled manner determined by the controller. Application Example 24: A matchless plasma source according to Application Example 1, wherein the reactance circuit has a reactance that can be adjusted by adjusting the capacitance, inductance, or a combination thereof of the reactance circuit. Application Example 25: A method for supplying radio frequency (RF) power to electrodes of a plasma chamber used for processing a substrate, The process involves generating an input RF signal using a signal generator at an operating frequency corresponding to the settings received from the controller, The process involves receiving the input RF signal from the signal generator and then generating a plurality of rectangular wave signals using a gate driver. The process of generating an amplified rectangular waveform by an amplification circuit after receiving the rectangular wave signal from the gate driver, wherein the amplification circuit has an agile DC rail connected to the controller, The process involves commanding the controller to set a voltage value for the agile DC rail in order to output the amplified rectangular waveform from the amplification circuit using a shaped envelope defined by a shaped voltage signal, A step of extracting a shaped sinusoidal waveform from the amplified rectangular waveform using a reactance circuit, wherein the shaped sinusoidal waveform is output based on the shaped envelope defined by the shaped voltage signal, A step of receiving the shaped sinusoidal waveform by the electrode via a connection between the output of the reactance circuit and the electrode in order to generate plasma for the processing of the substrate, A method that includes [a certain feature]. Application Example 26: A method according to Application Example 25, wherein each of the square wave signals is a pulse waveform that pulses between a low level and a high level at the operating frequency. Application Example 27: The method of application example 25, wherein the amplification circuit comprises a plurality of field-effect transistors arranged in a push-pull configuration, and the method further comprises, The process involves turning on the first field-effect transistor among the field-effect transistors when the second field-effect transistor among the field-effect transistors is off, A step of turning on the second field-effect transistor when the first field-effect transistor is off, A method that includes [a certain feature]. Application Example 28: A method of application example 27, wherein the field-effect transistor is fabricated from silicon carbide to define a silicon carbide field-effect transistor, and the silicon carbide field-effect transistor has a resistor that allows each of the silicon carbide field-effect transistors to be switched on or off substantially instantaneously in order to reduce on / off delay. Application Example 29: A method of application example 28, wherein the electric field effect is turned on and off substantially instantaneously in less than a predetermined period of time. Application Example 30: A method according to Application Example 25, further comprising the step of achieving a desired power level by a tree of transistors in the amplification circuit. Application Example 31: A method of application example 25, further comprising the step of generating the shaped voltage signal by the DC voltage source of the agile DC rail according to the voltage value in order to shape the amplified rectangular waveform. Application Example 32: A method of application example 25, wherein the amplified rectangular waveform is shaped to have the shaping envelope. Application Example 33: A method according to Application Example 25, wherein the shaping envelope is a multi-state pulse-shaped envelope, a triangular envelope, a continuous-shaped envelope, or an envelope of arbitrary shape. Application Example 34: A method according to Application Example 25, further comprising the step of reducing the reactance of the electrode, the reactance of the plasma formed in the plasma chamber, the reactance of the connection connecting the reactance circuit to the electrode, or a combination thereof, by the reactance of the reactance circuit. Application Example 35: A method according to Application Example 25, further comprising the step of removing higher-order harmonics of the amplified rectangular waveform by the quality coefficient of the reactance circuit to generate a fundamental waveform, wherein the shaped sinusoidal waveform is the fundamental waveform having the shaped envelope. Application Example 36: A method of application example 25, wherein communication between the reactance circuit and the electrode is achieved without an RF cable and an RF matching circuit. Application Example 37: The method of application example 25, further, The process involves measuring the complex voltage at the output of the amplifier circuit, the complex current at the output of the amplifier circuit, and the phase difference between the complex voltage and the complex current using a voltage / current probe. A step of controlling the operating frequency of the signal generator in order to reduce the phase difference and control the power of the shaped sinusoidal waveform, A method that includes [a certain feature]. Application Example 38: A method according to Application Example 37, further comprising the step of controlling the DC voltage source of the DC agile rail in order to control the voltage of the shaped sinusoidal waveform, the current of the shaped sinusoidal waveform, or the power of the shaped sinusoidal waveform. Application Example 39: The method of application example 25, further, The process involves measuring the complex voltage at the output of the aforementioned amplification circuit using a voltage probe, The process involves measuring complex current using a current probe, A step of calculating the phase difference between the complex voltage and the complex current, A step of controlling the operating frequency of the signal generator in order to reduce the phase difference and control the power of the shaped sinusoidal waveform, A method that includes [a certain feature]. Application example 40: A method according to Application Example 39, further comprising the step of controlling the DC voltage source of the DC agile rail in order to control the voltage of the shaped sinusoidal waveform, the current of the shaped sinusoidal waveform, or the power of the shaped sinusoidal waveform. Application Example 41: A method of application example 25, further comprising the step of generating a shaping envelope of arbitrary shape based on the voltage value for shaping the amplified rectangular waveform according to the shaping envelope. Application Example 42: A method of application example 41, wherein the arbitrary shape has a plurality of inclinations of the shaping envelope, and the plurality of inclinations change from one state to another in a controlled manner determined by the controller. Application Example 43: A method according to Application Example 25, further comprising the step of adjusting the reactance of the reactance circuit by adjusting the capacitance, inductance, or a combination thereof of the reactance circuit. Application Example 44: Matchless plasma source, The input section and The output section connected to the aforementioned input section, A reactance circuit connected to the output section and also connected to the electrodes of the plasma chamber via a connection, Equipped with, The aforementioned input portion is Controller board and A gate driver connected to the aforementioned controller board, Equipped with, The aforementioned output section is A half-bridge transistor circuit connected to the gate driver, wherein the half-bridge transistor circuit includes a DC rail, and the DC rail includes a DC voltage source, The controller board is configured to control the DC voltage source such that the output of the half-bridge transistor circuit changes the envelope of the amplified rectangular waveform, in a matchless plasma source. Application Example 45: A matchless plasma source of application example 44, wherein the reactance circuit is configured to reduce higher-order harmonics of the amplified rectangular waveform in order to generate a shaped sinusoidal waveform at the output of the reactance circuit, and the electrode is an antenna. Application Example 46: A matchless plasma source of Application Example 45, wherein the controller board comprises a controller, the controller board further comprises a signal generator connected to the controller and the gate driver, the matchless plasma source further comprises a voltage / current probe connected to the output of the half-bridge transistor circuit and the controller board, the voltage / current probe configured to measure a complex voltage at the output of the half-bridge transistor circuit, a complex current at the output of the half-bridge transistor circuit, and the phase difference between the complex voltage and the complex current, and the controller configured to control the operating frequency of the signal generator in order to reduce the phase difference and control the power of the shaped sinusoidal waveform. Application Example 47: A matchless plasma source of application example 46, wherein the DC agile rail comprises a DC voltage source, and the controller is configured to control the DC voltage source to control the voltage of the shaped sinusoidal waveform, the current of the shaped sinusoidal waveform, or the power of the shaped sinusoidal waveform. Application Example 48: A matchless plasma source of application example 44, wherein the connection does not have a high-frequency (RF) cable and an RF matching circuit between the reactance circuit and the electrode.

Claims

1. A matchless plasma source for supplying radio frequency (RF) power to electrodes of a plasma chamber used for processing substrates, Controller and A signal generator configured to provide an input RF signal at an operating frequency corresponding to the setting by the controller, A gate driver configured to receive the input RF signal and generate a plurality of square wave signals, An amplification circuit configured to receive the square wave signal from the gate driver and generate an amplified square wave, wherein the amplification circuit has an agile DC rail connected to the controller, The controller is configured to set a voltage value for the agile DC rail in order to cause the amplification circuit to output the amplified rectangular waveform with a shaped envelope defined by a shaped voltage signal, and includes an amplification circuit. A reactance circuit configured to extract a shaped sinusoidal waveform from the amplified rectangular waveform, wherein the shaped sinusoidal waveform is output based on the shaped envelope defined by the shaped voltage signal, To generate plasma for the processing of the substrate, an electrode configured to receive RF power from the shaped sinusoidal waveform is provided, A matchless plasma source equipped with a spectroscopy system.

2. A matchless plasma source according to claim 1, wherein each of the rectangular wave signals received from the gate driver is a pulse waveform that pulses between a low level and a high level at the operating frequency.

3. A matchless plasma source according to claim 1, wherein the amplification circuit is a half-bridge transistor circuit or a full-bridge H circuit, and the electrode is an antenna.

4. A matchless plasma source according to claim 3, wherein the half-bridge transistor circuit comprises a plurality of field-effect transistors or a plurality of insulated-gate bipolar transistors.

5. A matchless plasma source according to claim 4, wherein the field-effect transistor is cooled by a cooling plate.

6. A matchless plasma source according to claim 4, wherein the field-effect transistors are arranged in a push-pull configuration, and in the push-pull configuration, the first field-effect transistor among the field-effect transistors is on when the second field-effect transistor among the field-effect transistors is off, and the second field-effect transistor is on when the first field-effect transistor is off.

7. A matchless plasma source according to claim 4, wherein the field-effect transistor has a resistor that enables instantaneous on / off switching of the field-effect transistor in order to reduce on / off delay.

8. A matchless plasma source according to claim 7, wherein one of the field-effect transistors is turned on during the period in which another of the field-effect transistors is turned off, and the other of the field-effect transistors is turned on during the period in which one of the field-effect transistors is turned off.

9. A matchless plasma source according to claim 4, wherein the field-effect transistor is fabricated from at least one of silicon carbide and gallium nitride.

10. A matchless plasma source according to claim 1, wherein the amplification circuit comprises a tree of transistors, the tree being sized to achieve a desired power level.

11. A matchless plasma source according to claim 1, wherein the agile DC rail has a DC voltage source, the amplification circuit has a half-bridge transistor circuit having a plurality of field-effect transistors, and the agile DC rail is connected to the source terminal or drain terminal of the plurality of field-effect transistors depending on whether the field-effect transistors are p-type or n-type.

12. Matchless plasma source according to claim 1, wherein the agile DC rail has a DC voltage source configured to generate the shaping voltage signal having the voltage value for shaping the amplified rectangular waveform according to the shaping voltage signal.

13. A matchless plasma source according to claim 1, wherein the amplified rectangular waveform is shaped to have the shaping envelope.

14. A matchless plasma source according to claim 1, wherein the shaping envelope is a multi-state pulse-shaped envelope, a triangular envelope, a continuous-shaped envelope, or an envelope of any shape.

15. A matchless plasma source according to claim 1, wherein the reactance circuit has reactance configured to reduce the reactance of the electrodes, the reactance of the plasma when formed in the plasma chamber, the reactance of the connections connecting the reactance circuit to the electrodes, or a combination thereof.

16. A matchless plasma source according to claim 1, wherein the reactance circuit has a quality factor for removing higher-order harmonics of the amplified rectangular waveform to generate a fundamental waveform, and the shaped sinusoidal waveform is the fundamental waveform having the shaped envelope.

17. A matchless plasma source according to claim 1, wherein there is no RF cable and RF matching circuit in the connection between the reactance circuit and the electrode.

18. A matchless plasma source according to claim 1, further comprising a voltage / current probe configured to measure a complex voltage and a complex current at the output of the amplification circuit, and the phase difference between the complex voltage and the complex current, A matchless plasma source, wherein the controller is configured to control the operating frequency of the signal generator in order to reduce the phase difference and control the power of the shaped sinusoidal waveform.

19. Matchless plasma source according to claim 18, wherein the DC agile rail comprises a DC voltage source, and the controller is configured to control the DC voltage source to control the voltage of the shaped sinusoidal waveform, the current of the shaped sinusoidal waveform, or the power of the shaped sinusoidal waveform.

20. A matchless plasma source according to claim 1, further, A voltage probe configured to measure a complex voltage at the output of the amplification circuit, A current probe configured to measure a complex current on the connection between the reactance circuit and the electrode, Equipped with, A matchless plasma source, wherein the controller is configured to calculate the phase difference between the complex voltage and the complex current, and the controller is configured to control the operating frequency of the signal generator in order to reduce the phase difference and control the power of the shaped sinusoidal waveform.

21. Matchless plasma source according to claim 20, wherein the DC agile rail comprises a DC voltage source, and the controller is configured to control the DC voltage source to control the voltage of the shaped sinusoidal waveform, the current of the shaped sinusoidal waveform, or the power of the shaped sinusoidal waveform.

22. A matchless plasma source according to claim 1, further comprising an arbitrary waveform generator configured to generate a shaping control signal in order to facilitate the generation of the shaping envelope of any shape based on the voltage value, The shaping control signal shapes the amplified rectangular waveform according to the shaping envelope, and is a matchless plasma source.

23. Matchless plasma source according to claim 22, wherein the arbitrary shape has a plurality of inclinations of the shaping envelope, and the plurality of inclinations change from one state to another in a controlled manner determined by the controller.

24. A matchless plasma source according to claim 1, wherein the reactance circuit has a reactance that can be adjusted by adjusting the capacitance, inductance, or a combination thereof of the reactance circuit.

25. A method for supplying radio frequency (RF) power to electrodes of a plasma chamber used for processing a substrate, The process involves generating an input RF signal using a signal generator at an operating frequency corresponding to the settings received from the controller, The process involves receiving the input RF signal from the signal generator and then generating a plurality of rectangular wave signals using a gate driver. The process of generating an amplified rectangular waveform by an amplification circuit after receiving the rectangular wave signal from the gate driver, wherein the amplification circuit has an agile DC rail connected to the controller, The process involves commanding the controller to set a voltage value for the agile DC rail in order to output the amplified rectangular waveform from the amplification circuit with a shaped envelope defined by a shaped voltage signal, A step of extracting a shaped sinusoidal waveform from the amplified rectangular waveform using a reactance circuit, wherein the shaped sinusoidal waveform is output based on the shaped envelope defined by the shaped voltage signal, A step of receiving the shaped sinusoidal waveform by the electrode via a connection between the output of the reactance circuit and the electrode in order to generate plasma for the processing of the substrate, A method that includes [a certain feature].

26. A method according to claim 25, wherein each of the square wave signals is a pulse waveform that pulses between a low level and a high level at the operating frequency.

27. The method according to claim 25, wherein the amplification circuit comprises a plurality of field-effect transistors arranged in a push-pull configuration, and the method further comprises The process involves turning on the first field-effect transistor among the field-effect transistors when the second field-effect transistor among the field-effect transistors is off, A step of turning on the second field-effect transistor when the first field-effect transistor is off, A method that includes [a certain feature].

28. A method according to claim 27, wherein the field-effect transistor is fabricated from silicon carbide to define a silicon carbide field-effect transistor, and the silicon carbide field-effect transistor has a resistor that allows each of the silicon carbide field-effect transistors to be turned on or off substantially instantaneously in order to reduce on / off delay.

29. A method according to claim 28, wherein the electric field effect is turned on and off substantially instantaneously in less than a predetermined period of time.

30. A method according to claim 25, further comprising the step of achieving a desired power level by a tree of transistors in the amplification circuit.

31. A method according to claim 25, further comprising the step of generating the shaped voltage signal with respect to the voltage value using a DC voltage source of the agile DC rail in order to shape the amplified rectangular waveform.

32. A method according to claim 25, wherein the amplified rectangular waveform is shaped to have the shaping envelope.

33. The method according to claim 25, wherein the shaped envelope is a multi-state pulse-shaped envelope, a triangular envelope, a continuous-shaped envelope, or an envelope of any shape.

34. A method according to claim 25, further comprising the step of reducing the reactance of the electrode, the reactance of the plasma when formed in the plasma chamber, the reactance of the connection connecting the reactance circuit to the electrode, or a combination thereof, by the reactance of the reactance circuit.

35. A method according to claim 25, further comprising the step of removing higher-order harmonics of the amplified rectangular waveform by a quality coefficient of the reactance circuit to generate a fundamental waveform, wherein the shaped sinusoidal waveform is the fundamental waveform having the shaped envelope.

36. A method according to claim 25, wherein communication between the reactance circuit and the electrode is achieved without an RF cable and an RF matching circuit.

37. The method according to claim 25, further, The process involves measuring the complex voltage at the output of the amplifier circuit, the complex current at the output of the amplifier circuit, and the phase difference between the complex voltage and the complex current using a voltage / current probe. A step of controlling the operating frequency of the signal generator in order to reduce the phase difference and control the power of the shaped sinusoidal waveform, A method that includes [a certain feature].

38. A method according to claim 37, further comprising the step of controlling a DC voltage source of the DC agile rail in order to control the voltage of the shaped sinusoidal waveform, the current of the shaped sinusoidal waveform, or the power of the shaped sinusoidal waveform.

39. The method according to claim 25, further, The process involves measuring the complex voltage at the output of the aforementioned amplification circuit using a voltage probe, The process involves measuring complex current using a current probe, A step of calculating the phase difference between the complex voltage and the complex current, A step of controlling the operating frequency of the signal generator in order to reduce the phase difference and control the power of the shaped sinusoidal waveform, A method that includes [a certain feature].

40. A method according to claim 39, further comprising the step of controlling a DC voltage source of the DC agile rail in order to control the voltage of the shaped sinusoidal waveform, the current of the shaped sinusoidal waveform, or the power of the shaped sinusoidal waveform.

41. A method according to claim 25, further comprising the step of generating a shaping envelope of arbitrary shape based on the voltage value for shaping the amplified rectangular waveform according to the shaping envelope.

42. A method according to claim 41, wherein the arbitrary shape has a plurality of inclinations of the shaping envelope, and the plurality of inclinations change from one state to another in a controlled manner determined by the controller.

43. A method according to claim 25, further comprising the step of adjusting the reactance of the reactance circuit by adjusting the capacitance, inductance, or a combination thereof of the reactance circuit.

44. Matchless plasma source, The input section and The output section connected to the aforementioned input section, A reactance circuit connected to the output section and also connected to the electrodes of the plasma chamber via a connection, Equipped with, The aforementioned input portion is Controller board and A gate driver connected to the aforementioned controller board, Equipped with, The aforementioned output section is A half-bridge transistor circuit connected to the gate driver, wherein the half-bridge transistor circuit includes a DC rail, and the DC rail includes a DC voltage source, The controller board is configured to control the DC voltage source such that the output of the half-bridge transistor circuit changes the envelope of the amplified rectangular waveform, in a matchless plasma source.

45. Matchless plasma source according to claim 44, wherein the reactance circuit is configured to reduce higher harmonics of the amplified rectangular waveform in order to generate a shaped sinusoidal waveform at the output of the reactance circuit, and the electrode is an antenna.

46. Matchless plasma source according to claim 45, wherein the controller board comprises a controller, the controller board further comprises a signal generator connected to the controller and the gate driver, the matchless plasma source further comprises a voltage / current probe connected to the output of the half-bridge transistor circuit and the controller board, the voltage / current probe configured to measure a complex voltage at the output of the half-bridge transistor circuit, a complex current at the output of the half-bridge transistor circuit, and a phase difference between the complex voltage and the complex current, and the controller configured to control the operating frequency of the signal generator in order to reduce the phase difference and control the power of the shaped sinusoidal waveform.

47. Matchless plasma source according to claim 46, wherein the DC agile rail comprises a DC voltage source, and the controller is configured to control the DC voltage source to control the voltage of the shaped sinusoidal waveform, the current of the shaped sinusoidal waveform, or the power of the shaped sinusoidal waveform.

48. A matchless plasma source according to claim 44, wherein the connection does not include a high-frequency (RF) cable and an RF matching circuit between the reactance circuit and the electrode.

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