Semiconductor equipment

Abstract

To provide a compact semiconductor device, a semiconductor device with low power consumption, and a semiconductor device with high integration density. [Solution] The amplifier 750 has a semiconductor device 751, an inductor 752, a capacitive element 753, and a terminal 793, and processes the input signal given to terminal 792 and outputs it from terminal 793. The semiconductor device 751 has a gate driver 760, a power control circuit 761, a transistor 762, a transistor 763, terminals 791, 792, 794, and 795, and amplifies, converts, etc., the input signal given to terminal 792 and outputs it from terminal 791. The gate driver 760 has terminals G1 and G2. The power control circuit 761 has a comparator 771. Terminals V1 and V2 are connected to the gate driver 760. Terminal REF is connected to the power control circuit 761. The inductor 752 and the capacitive element 753 function as a low-pass filter.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a semiconductor device, particularly a device for driving a power supply device. The present invention relates to a semiconductor device that functions as a drive circuit for the purpose of [doing something]. Furthermore, one aspect of the present invention relates to an amplifier This relates to electronic components. Furthermore, one aspect of the present invention relates to electronic devices. This relates to the present invention. Furthermore, one aspect of the present invention relates to a method for manufacturing semiconductor devices, amplifiers, electronic components, and electronic devices. Regarding the law.

[0002] One aspect of the present invention is not limited to the above-mentioned technical field. The technical field relates to a product, a method, or a method of manufacture. Or, one aspect of the present invention. This refers to a process, machine, manufacture, or composition. This relates to (a). Therefore, one aspect of the present invention disclosed more specifically herein In the field of technology, this includes display devices, light-emitting devices, energy storage devices, imaging devices, memory devices, vehicles, and mobile devices. Examples include the body, the method of driving them, or the method of manufacturing them. [Background technology]

[0003] High-power transistors are used to drive high loads such as motors, and are used for high-speed switching. High demands for tuning characteristics, low power consumption, high reliability, wide operating temperature range, etc. An example of a transistor drive circuit is described in Patent Document 1.

[0004] Furthermore, power transistors are driven using PWM (Pulse Width Modulation). This may be done using control. PWM control is performed using PWM output from a microcontroller, etc. It is performed by a signal. Since the gate capacitance of a power transistor is large, a PWM signal has a low voltage. Therefore, the PWM signal needs to be converted into a high-voltage signal and applied to the power transistor. A drive circuit for converting the PWM signal into a high-voltage signal is composed of transistors using silicon. For example, Patent Document 2 discloses a configuration of a semiconductor device provided with an n-channel transistor and a p-channel transistor on a silicon substrate to control the on or off of a power transistor. Transistors having a metal oxide in a channel formation region (hereinafter sometimes referred to as "oxide semiconductor transistors" or "OS transistors") are known. Various semiconductor devices have been fabricated by a hybrid CMOS process of OS transistors and Si transistors (Non-Patent Document 1). As shown in Non-Patent Document 1, OS transistors can be provided laminated on Si transistors. Also, it is possible to provide a first gate electrode (also referred to as a gate or a front gate) and a second gate electrode (also referred to as a back gate) on an OS transistor. It is performed by a signal. Since the gate capacitance of a power transistor is large, a PWM signal has a low voltage. Therefore, the PWM signal needs to be converted into a high-voltage signal and applied to the power transistor. A drive circuit for converting the PWM signal into a high-voltage signal is composed of transistors using silicon. For example, Patent Document 2 discloses a configuration of a semiconductor device provided with an n-channel transistor and a p-channel transistor on a silicon substrate to control the on or off of a power transistor. It is performed by a signal. Since the gate capacitance of a power transistor is large, a PWM signal has a low voltage. Therefore, the PWM signal needs to be converted into a high-voltage signal and applied to the power transistor. A drive circuit for converting the PWM signal into a high-voltage signal is composed of transistors using silicon. For example, Patent Document 2 discloses a configuration of a semiconductor device provided with an n-channel transistor and a p-channel transistor on a silicon substrate to control the on or off of a power transistor. It is performed by a signal. Since the gate capacitance of a power transistor is large, a PWM signal has a low voltage. Therefore, the PWM signal needs to be converted into a high-voltage signal and applied to the power transistor. A drive circuit for converting the PWM signal into a high-voltage signal is composed of transistors using silicon. For example, Patent Document 2 discloses a configuration of a semiconductor device provided with an n-channel transistor and a p-channel transistor on a silicon substrate to control the on or off of a power transistor. It is performed by a signal. Since the gate capacitance of a power transistor is large, a PWM signal has a low voltage. Therefore, the PWM signal needs to be converted into a high-voltage signal and applied to the power transistor. A drive circuit for converting the PWM signal into a high-voltage signal is composed of transistors using silicon. For example, Patent Document 2 discloses a configuration of a semiconductor device provided with an n-channel transistor and a p-channel transistor on a silicon substrate to control the on or off of a power transistor.

[0005] Transistors having a metal oxide in a channel formation region (hereinafter sometimes referred to as "oxide semiconductor transistors" or "OS transistors") are known. Various semiconductor devices have been fabricated by a hybrid CMOS process of OS transistors and Si transistors (Non-Patent Document 1). As shown in Non-Patent Document 1, OS transistors can be provided laminated on Si transistors. Also, it is possible to provide a first gate electrode (also referred to as a gate or a front gate) and a second gate electrode (also referred to as a back gate) on an OS transistor. Transistors having a metal oxide in a channel formation region (hereinafter sometimes referred to as "oxide semiconductor transistors" or "OS transistors") are known. Various semiconductor devices have been fabricated by a hybrid CMOS process of OS transistors and Si transistors (Non-Patent Document 1). As shown in Non-Patent Document 1, OS transistors can be provided laminated on Si transistors. Also, it is possible to provide a first gate electrode (also referred to as a gate or a front gate) and a second gate electrode (also referred to as a back gate) on an OS transistor. Transistors having a metal oxide in a channel formation region (hereinafter sometimes referred to as "oxide semiconductor transistors" or "OS transistors") are known. Various semiconductor devices have been fabricated by a hybrid CMOS process of OS transistors and Si transistors (Non-Patent Document 1). As shown in Non-Patent Document 1, OS transistors can be provided laminated on Si transistors. Also, it is possible to provide a first gate electrode (also referred to as a gate or a front gate) and a second gate electrode (also referred to as a back gate) on an OS transistor. Transistors having a metal oxide in a channel formation region (hereinafter sometimes referred to as "oxide semiconductor transistors" or "OS transistors") are known. Various semiconductor devices have been fabricated by a hybrid CMOS process of OS transistors and Si transistors (Non-Patent Document 1). As shown in Non-Patent Document 1, OS transistors can be provided laminated on Si transistors. Also, it is possible to provide a first gate electrode (also referred to as a gate or a front gate) and a second gate electrode (also referred to as a back gate) on an OS transistor. Transistors having a metal oxide in a channel formation region (hereinafter sometimes referred to as "oxide semiconductor transistors" or "OS transistors") are known. Various semiconductor devices have been fabricated by a hybrid CMOS process of OS transistors and Si transistors (Non-Patent Document 1). As shown in Non-Patent Document 1, OS transistors can be provided laminated on Si transistors. Also, it is possible to provide a first gate electrode (also referred to as a gate or a front gate) and a second gate electrode (also referred to as a back gate) on an OS transistor. Transistors having a metal oxide in a channel formation region (hereinafter sometimes referred to as "oxide semiconductor transistors" or "OS transistors") are known. Various semiconductor devices have been fabricated by a hybrid CMOS process of OS transistors and Si transistors (Non-Patent Document 1). As shown in Non-Patent Document 1, OS transistors can be provided laminated on Si transistors. Also, it is possible to provide a first gate electrode (also referred to as a gate or a front gate) and a second gate electrode (also referred to as a back gate) on an OS transistor. Transistors having a metal oxide in a channel formation region (hereinafter sometimes referred to as "oxide semiconductor transistors" or "OS transistors") are known. Various semiconductor devices have been fabricated by a hybrid CMOS process of OS transistors and Si transistors (Non-Patent Document 1). As shown in Non-Patent Document 1, OS transistors can be provided laminated on Si transistors. Also, it is possible to provide a first gate electrode (also referred to as a gate or a front gate) and a second gate electrode (also referred to as a back gate) on an OS transistor.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Patent Document 2

Non-Patent Documents

[0007]

Non-Patent Document 1

[0008] One aspect of the present invention aims to provide a compact semiconductor device, amplifier, electronic device, etc. This is one aspect of the present invention. Alternatively, one aspect of the present invention is a semiconductor device, amplifier, electronic device with low power consumption. One objective of this invention is to provide a device, etc. Alternatively, one aspect of this invention is a semiconductor with a high degree of integration. One of the objectives is to provide a device, amplifier, electronic equipment, etc. Or, an embodiment of the present invention. One of the objectives of this invention is to prevent malfunctions in semiconductor devices. Alternatively, one aspect of this invention is to manufacture One of the challenges is to suppress the increase in manufacturing costs. Alternatively, one aspect of the present invention relates to a novel semiconductor One of our objectives is to provide conductive devices, amplifiers, electronic components, electronic equipment, vehicles, mobile devices, etc. do.

[0009] The problems addressed by one embodiment of the present invention are not limited to those listed above. This does not preclude the existence of other issues. These other issues are described in the following section. This is an issue not mentioned in the specification. Issues not mentioned in this section can be found in the specification or by those skilled in the art. This can be derived from drawings and other descriptions, and can be extracted as appropriate from these descriptions. Furthermore, one aspect of the present invention addresses at least of the problems listed above and / or other problems. It solves one problem. [Means for solving the problem]

[0010] One aspect of the present invention comprises a first transistor, a second transistor, a gate driver, and It has a first comparator circuit, a second comparator circuit, and a first terminal, and the gate driver has a third transistor It has a first transistor and a fourth transistor, and one of the source and drain of the first transistor and The source and drain of the second transistor are electrically connected to the first terminal, and The third and fourth transistors are stacked on the first transistor, One of the sources and drains of the 3rd transistor, and the source and drain of the 4th transistor One end of the input is electrically connected to the gate of the first transistor, and the first comparison circuit has an analog Given a logarithmic signal and a first potential, the first comparator circuit compares the analog signal with the first potential. It has a function to output a signal corresponding to the result as the first output signal, and the second comparison circuit has the first output Given a force signal and a carrier wave, the second comparison circuit compares the first output signal with the carrier wave. It has the function of outputting the corresponding signal as a second output signal, and the gate driver is the first transient By applying the desired potential to the gate of the first transistor and the gate of the second transistor, respectively... This is a semiconductor device that has the function of outputting a signal corresponding to the second output signal to the first terminal.

[0011] Furthermore, in the above configuration, the first transistor has silicon and germanium in the channel formation region. nium, silicon germanium, gallium arsenide, gallium aluminum arsenide, phosphide Selected from zinc, silicon carbide, zinc selenide, gallium nitride, and gallium oxide. It is preferable to have one or more of these.

[0012] Furthermore, in the above configuration, the third transistor and the fourth transistor are each, A semiconductor having a metal oxide in the Nell-forming region, the metal oxide being indium and zinc. Device.

[0013] Furthermore, in the above configuration, it is preferable that the carrier wave is a triangular wave.

[0014] Alternatively, one aspect of the present invention comprises a first transistor, a second transistor, and a gate driver. A power supply control circuit, an inductor, a capacitive element, a first terminal, a second terminal, and a third terminal The gate driver has a third transistor and a fourth transistor, and the third The transistor and the fourth transistor are each stacked on top of the first transistor. And, one of the source and drain of the first transistor and the source of the second transistor One end of the drain is electrically connected to the first terminal, and the source and drain of the third transistor. One side of the rain and one side of the source and drain of the fourth transistor are connected to the first transistor. The gate is electrically connected, and the power control circuit electrically connects the gate driver and the second terminal. It is connected to the first terminal, and one terminal of the inductor is electrically connected to the first terminal, and the other terminal of the inductor One terminal is electrically connected to the third terminal and one terminal of the capacitive element, and the power control circuit is Based on the analog signal provided from the second terminal, a signal is generated and supplied to the gate driver. An amplifier that has the function of outputting an amplified analog signal from a third terminal.

[0015] Furthermore, in the above configuration, the power control circuit has a first comparator circuit and a second comparator circuit. The first comparison circuit takes a signal corresponding to the comparison result between the analog signal and the first potential as the first output signal. The second comparison circuit has the function of outputting a signal according to the comparison result between the first output signal and the carrier wave. It has the function of outputting as the second output signal, and the gate driver is the gate of the first transistor By applying the desired potential to the gates of the first and second transistors, the second output is generated. It is preferable that the device has a function to output a signal corresponding to the signal to the first terminal.

[0016] Furthermore, in the above configuration, the first terminal or the third terminal is electrically connected to the second terminal. It is preferable.

[0017] Alternatively, one aspect of the present invention is an electronic device having the amplifier and speaker described above. be.

[0018] Alternatively, one aspect of the present invention comprises a first transistor, an insulating layer on the first transistor, and a conductive It has a conductive layer and a gate driver, and a portion of the conductive layer is embedded within the insulating layer. The gate driver has a second transistor and a third transistor, and the second transistor The transistor and the third transistor are stacked on the first transistor, and the second transistor The zista and the third transistor each have a metal oxide in the channel formation region, and the metal The oxide contains indium and zinc, and is one of the source and drain of the second transistor. On one side, the source and drain of the third transistor are connected to the first transistor via a conductive layer. The gate is electrically connected to the sta gate, and the gate driver is supplied with a first potential and a second potential. The gate driver then selects either the first or second potential to control the gate of the first transistor. This is a semiconductor device that has the function of providing [something].

[0019] Furthermore, in the above configuration, the gate driver has a level shift circuit, and the level shift circuit The path provides potential to the gates of the second transistor and the gates of the third transistor, respectively. It is preferable that the system has the function of generating [something].

[0020] Furthermore, in the above configuration, the first transistor has silicon and germanium in the channel formation region. nium, silicon germanium, gallium arsenide, gallium aluminum arsenide, phosphide Selected from zinc, silicon carbide, zinc selenide, gallium nitride, and gallium oxide. It is preferable to have one or more of these.

[0021] Furthermore, in the above configuration, the metal oxides are aluminum, gallium, yttrium, and copper. Vanadium, beryllium, boron, titanium, iron, nickel, germanium, zirconium Molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten Preferably, it has one or more selected from magnesium.

[0022] Furthermore, in the above configuration, a drain electrode, a first diffusion layer on the drain electrode, and a first diffusion A semiconductor region on the layer and a second diffusion layer, a gate electrode on the semiconductor region, and a so on the second diffusion layer The first diffusion layer has an electrode and a region that functions as the drain of the first transistor. The semiconductor region has a region that functions as the channel formation region of the first transistor. The second diffusion layer preferably has a region that functions as a source for the first transistor.

[0023] Furthermore, in the above configuration, a second semiconductor region is bonded to the semiconductor region, and a second diffusion layer The polarity of the first and second semiconductor regions are different from each other, and the first diffusion layer, the second semiconductor region and Each of the second diffusion layers preferably has a region that functions as part of the diode element. stomach.

[0024] Furthermore, in the above configuration, the second semiconductor region is the region bonded to the second diffusion layer. It is preferable.

[0025] Furthermore, in the above configuration, the second semiconductor region and the second diffusion layer form a pn junction. preferable. [Effects of the Invention]

[0026] According to one aspect of the present invention, a compact semiconductor device, amplifier, electronic device, etc., is provided. It is possible. Furthermore, according to one aspect of the present invention, a semiconductor device, amplifier, and electronic device with low power consumption are possible. , etc. can be provided. Furthermore, according to one aspect of the present invention, a highly integrated semiconductor device, Amplifiers, electronic devices, etc. can be provided. Furthermore, according to one aspect of the present invention, semiconductor devices This prevents malfunctions during placement. Furthermore, according to one aspect of the present invention, it is possible to suppress increases in manufacturing costs. It is possible to create a novel semiconductor device, amplifier, and electronic component according to one aspect of the present invention. We can provide electronic devices, vehicles, mobile devices, etc.

[0027] The effects of one embodiment of the present invention are not limited to those listed above. This does not preclude the existence of other effects. These other effects are described in the following section. This is an effect not mentioned in the specification. Effects not mentioned in this section can be described in the specification or by those skilled in the art. This can be derived from drawings and other descriptions, and can be extracted as appropriate from these descriptions. Furthermore, one aspect of the present invention includes, among the effects listed above and / or other effects, at least It has one effect. Therefore, one aspect of the present invention may, in some cases, be the one enumerated above. It may not always have the desired effect. [Brief explanation of the drawing]

[0028] [Figure 1] Figure 1A is a circuit diagram showing an example of an amplifier according to one aspect of the present invention. Figure 1B is a circuit diagram showing an example of an amplifier according to one aspect of the present invention. [Figure 2] Figure 2A is a circuit diagram showing an example of an amplifier according to one aspect of the present invention. Figure 2B is a block diagram showing the configuration of a circuit according to one aspect of the present invention. [Figure 3] Figure 3 is a circuit diagram showing an example of an amplifier according to one embodiment of the present invention. [Figure 4] Figure 4 is a circuit diagram showing the configuration of a circuit according to one embodiment of the present invention. [Figure 5] Figure 5 is a circuit diagram showing the configuration of a circuit according to one embodiment of the present invention. [Figure 6] Figure 6A is a circuit diagram showing the configuration of a circuit according to one embodiment of the present invention. Figure 6B is a circuit diagram showing the configuration of a circuit according to one embodiment of the present invention. [Figure 7] Figure 7 is a timing chart diagram illustrating the operation of a circuit according to one embodiment of the present invention. [Figure 8] Figure 8A is a circuit diagram showing the configuration of a circuit according to one embodiment of the present invention. Figure 8B is a block diagram showing the configuration of a circuit according to one embodiment of the present invention. [Figure 9] Figure 9 is a circuit diagram showing the configuration of a circuit according to one embodiment of the present invention. [Figure 10] Figure 10 is a circuit diagram illustrating one aspect of the present invention. [Figure 11] Figure 11 is a cross-sectional view showing an example of the structure of a semiconductor device. [Figure 12] Figure 12 is a cross-sectional view showing an example of the structure of a semiconductor device. [Figure 13] Figure 13 is a cross-sectional view showing an example of a transistor structure. [Figure 14] Figure 14A is a cross-sectional view showing an example of transistor structure. Figure 14B is a cross-sectional view showing an example of transistor structure. [Figure 15] Figure 15 shows an example of the configuration of an electronic component having a semiconductor device according to one embodiment of the present invention. [Figure 16]Figure 16 shows an example of the configuration of an electronic component having a semiconductor device according to one embodiment of the present invention. [Figure 17] Figure 17 is a cross-sectional view showing an example of the structure of a semiconductor device. [Figure 18] Figure 18 shows an example of an electronic component. [Figure 19] Figure 19A is an example of an electronic device according to one aspect of the present invention. Figure 19B is an example of an electronic device according to one aspect of the present invention. Figure 19C is an example of an electronic device according to one aspect of the present invention. Figure 19D is an example of an electronic device according to one aspect of the present invention. Figure 19E is an example of an electronic device according to one aspect of the present invention. [Modes for carrying out the invention]

[0029] The embodiments will be described below with reference to the drawings. However, many of the embodiments differ. It is possible to implement it in any manner, without deviating from its purpose and scope. It will be readily apparent to those skilled in the art that the details can be modified in various ways. Therefore, the present invention The following embodiments are not to be interpreted as being limited to their contents.

[0030] In this specification, the ordinal numbers "1st," "2nd," and "3rd" refer to the constituent elements. This is added to avoid confusion. Therefore, it does not limit the number of constituent elements. Furthermore, this does not limit the order of the components. Also, for example, the embodiments described herein The component referred to as "first" in one is in another embodiment or in the claims. It may also be the component referred to in "Second" in [the relevant section]. Furthermore, for example, in this specification, etc. In one embodiment, the component referred to as "first" is used in other embodiments, or It may be omitted in the claims.

[0031] In the drawings, elements that are identical or have similar functions, elements made of the same material, etc. In some cases, elements formed simultaneously may be given the same symbol, and the explanation for this repetition is as follows: It may be omitted in some cases.

[0032] Furthermore, the position, size, and range of each component shown in the drawings, etc., are intended to facilitate understanding of the invention. Therefore, the actual location, size, and range may not be represented. The invention is not necessarily limited to the position, size, scope, etc. disclosed in the drawings, etc. However, in the actual manufacturing process, the resist mask and other materials may be removed due to processes such as etching. While there may be some reduction in volume, this is sometimes not reflected in the diagram for the sake of easier understanding.

[0033] Furthermore, to make drawings easier to understand, such as top views (also called "plan views") and perspective views. Therefore, the description of some components may be omitted.

[0034] Furthermore, in this specification, the terms "electrode" and "wiring" refer to these components functionally. It is not limited to this. For example, "electrode" can be used as part of "wiring". And the reverse is also true. Furthermore, the terms "electrode" and "wiring" can refer to multiple "electrodes" and This includes cases where the wiring is formed as a single integrated unit.

[0035] Furthermore, in this specification, "terminal" refers, for example, to a wire or an electrode connected to a wire. It may refer to the same thing. Also, in this specification, etc., some parts of "wiring" may be referred to as "terminals". .

[0036] In this specification, the terms "above" and "below" refer to the relative positions of the constituent elements, specifically when they are directly above or below. It is not limited to being directly below and in direct contact. For example, "electrical on insulating layer A" If the expression is "electrode B," it is not necessary for electrode B to be directly in contact with the insulating layer A. Cases containing other components between insulating layer A and electrode B are not excluded.

[0037] Furthermore, the source and drain functions may differ when using transistors with different polarities, In circuit operation, the direction of current changes, and depending on the operating conditions, they can be swapped. Therefore, it is difficult to determine which is the source and which is the drain. In this specification, the terms source and drain may be used interchangeably. It shall be considered as such.

[0038] Furthermore, in this specification, "electrically connected" refers to both a direct connection and a connection without any other means. This includes cases where it is connected via "something that has an electrical effect". Here, "anything" "A device that has electrical properties" is one that enables the exchange of electrical signals between connected objects. If so, there are no particular restrictions. Therefore, even when it is expressed as "electrically connected" In real-world circuits, there are cases where there are no physical connections, and only wiring extends. ru.

[0039] Furthermore, in this specification and elsewhere, "parallel" means, for example, two straight lines that are at an angle of -10° or more. This refers to a state where the objects are positioned at an angle of -° or less. Therefore, it also includes cases where the angle is between -5° and 5°. Furthermore, "perpendicular" and "orthogonal" refer to, for example, two lines that are at an angle of 80° or more and 100° or less. This refers to a state where objects are positioned at a certain angle. Therefore, it also includes cases where the angle is between 85° and 95°.

[0040] In this specification and other documents, the terms "identical," "same," and "equivalent" are used in relation to count values ​​and measured values. When using terms like "uniform" or "same," unless otherwise specified, it refers to plus or minus 2. Assume a 0% margin of error.

[0041] Furthermore, in this specification, when etching is performed after forming a resist mask: Unless otherwise specified, the resist mask should be removed after the etching process is complete. ru.

[0042] Furthermore, voltage is the potential difference between a certain potential and a reference potential (e.g., ground potential or source potential). It often refers to the difference. Therefore, voltage and potential can sometimes be used interchangeably. many.

[0043] Furthermore, even when the term "semiconductor" is used, if, for example, its conductivity is sufficiently low, it can be referred to as an "insulator." It possesses the following characteristics. Therefore, it is also possible to use it by replacing "semiconductor" with "insulator". Yes, in this case, the boundary between "semiconductors" and "insulators" is ambiguous, and a strict distinction between the two is difficult. Therefore, the terms "semiconductor" and "insulator" as used in this specification may be interpreted interchangeably. It is sometimes possible.

[0044] Also, even when the term "semiconductor" is used, for example, if the conductivity is sufficiently high, it can be referred to as a "conductor." It possesses the following characteristics. Therefore, it is also possible to use it by replacing "semiconductor" with "conductor". Yes, in this case, the boundary between "semiconductors" and "conductors" is ambiguous, and a strict distinction between the two is difficult. Therefore, the terms "semiconductor" and "conductor" as used herein may be interpreted interchangeably. It is sometimes possible.

[0045] In this specification, the "on state" of a transistor refers to the source of the transistor. This refers to a state where the drain can be considered electrically short-circuited (also called a "conductive state"). Furthermore, the "off state" of a transistor means that the source and drain of the transistor are electrically separated. This refers to a state that can be considered disconnected (also called a "non-conductive state").

[0046] Furthermore, in this specification, "on-current" refers to the current when the transistor is in the ON state. Sometimes, "off-current" refers to the current that flows between the transistor and the drain. It can sometimes refer to the current flowing between the source and drain when the device is in the off state.

[0047] Furthermore, in this specification, etc., the high power supply potential VDD (hereinafter simply referred to as "VDD" or "H potential") is used. (Also called "low power supply potential") indicates a power supply potential that is higher than the low power supply potential VSS. The VSS (hereinafter also simply referred to as "VSS" or "L potential") is the voltage relative to the high power supply potential VDD. It shows a power supply potential that is even lower. Also, use the ground potential as VDD or VSS. It is also possible. For example, if VDD is at ground potential, then VSS is at a lower potential than ground potential. If VSS is at ground potential, then VDD is at a higher potential than ground potential.

[0048] Furthermore, in this specification, the term "gate" refers to a gate electrode and part or all of the gate wiring. It refers to the gate. Gate wiring is the gate electrode of at least one transistor and another This refers to wiring used to electrically connect electrodes or other wiring.

[0049] Furthermore, in this specification, the term "source" refers to the source region, source electrode, and source wiring. This refers to a part or all of the source region. The source region is the part of the semiconductor layer whose resistivity is below a certain value. This refers to the region. The source electrode is the conductive layer of the part connected to the source region. Source wiring refers to the connection between the source electrode of at least one transistor and another electrode or another wiring. This refers to the wiring used to electrically connect wires.

[0050] Furthermore, in this specification, the term "drain" refers to the drain region, the drain electrode, and the drain This refers to part or all of the wiring. The drain region is a part of the semiconductor layer with a resistivity of one This refers to the region below a certain value. The drain electrode is the conductive part connected to the drain region. It refers to a layer. Drain wiring refers to the drain electrode of at least one transistor, This refers to wiring used to electrically connect another electrode or another wire.

[0051] Furthermore, a semiconductor device refers to a circuit that includes semiconductor elements (transistors, diodes, etc.), and the same This refers to a device that has a circuit. It also refers to any device that can function by utilizing the properties of semiconductors. For example, integrated circuits, chips equipped with integrated circuits, display devices, light-emitting devices, lighting devices and electronics All equipment is semiconductor device.

[0052] (Embodiment 1) This embodiment describes an amplifier according to one aspect of the present invention.

[0053] An amplifier according to one embodiment of the present invention is shown in Figures 1A, 1B, 2A, and 3.

[0054] The amplifier 750 shown in Figure 1A consists of a semiconductor device 751, an inductor 752, and a capacitive element 753. and has terminal 793. The inductor 752 is sometimes called a coil. Amplifier 7 50 processes the input signal provided to terminal 792 and outputs it from terminal 793. Yes, it is possible. Note that the amplifier 750 is sometimes simply referred to as "amplifier."

[0055] The input signal applied to terminal 792 is, for example, an analog signal. If the input signal is digital In the case of a signal, for example, a digital signal can be converted to an analog signal using a digital-to-analog conversion circuit. After converting it, you can then feed it to terminal 792.

[0056] The semiconductor device 751 includes a gate driver 760, a power control circuit 761, and a transistor 76 2. It has transistor 763, terminals 791, 792, 794 and 795. The gate driver 760 has terminals G1 and G2. The power control circuit 761 is It has a comparator 771. Terminals V1 and V2 are connected to the gate driver 760. It is connected. Terminal REF is connected to the power control circuit 761. The comparator is It is sometimes called a comparator circuit.

[0057] One terminal of inductor 752 is connected to terminal 791, and the other terminal is connected to one terminal of capacitive element 753. The electrode and terminal 793 are electrically connected. The other terminal of the capacitive element 753 is connected to ground. A rank is assigned.

[0058] The semiconductor device 751 amplifies, converts, etc., the input signal applied to terminal 792, and terminal It has the function of outputting from 791. The inductor 752 and the capacitive element 753 are low-pass filters. It can function as a filter. This low-pass filter receives the output signal from terminal 791. Among the signals, it has the function of attenuating specific frequency components and outputting them from terminal 793.

[0059] The output from terminal 793 is fed back to terminal 792. Note that in Figure 1A The example shows that terminal 793 is electrically connected to terminal 792 and provides feedback, but terminal Terminal 791 may be electrically connected to terminal 792 to provide feedback.

[0060] In semiconductor device 751, the non-inverting input terminal and inverting input terminal of comparator 771 Terminal 792 is electrically connected to one end, and terminal REF is electrically connected to the other end. The reference potential Vr is applied to terminal REF. The output terminal of comparator 771 is the gate It is electrically connected to driver 760.

[0061] Terminal G1 of gate driver 760 is connected to the gate of transistor 762, and terminal G2 is connected to the transistor Each is electrically connected to the gate of transistor 763. The source of transistor 762 One of the drains and the source and drain of transistor 763 are connected to terminal 79 It is electrically connected to terminal 1. The source and drain of transistor 762 are connected to terminal 7. Electrically connected to 94, the source and drain of transistor 763 are connected to terminal 7. It is electrically connected to 95.

[0062] For example, terminal 794 is supplied with a high potential VH, and terminal 795 is supplied with a low potential VL. It can be obtained. The ground potential may be used as the low potential VL. Transistor 763 is ON. Yes, and when transistor 762 is in the off state, terminal 791 is electrically connected to terminal 795. The connection is established, and a low potential VL is applied to terminal 791. Transistor 763 When the transistor 762 is ON, terminal 791 is connected to terminal 79 4. The terminals become electrically connected, and a high potential VH is applied to terminal 791.

[0063] Comparator 771 compares the signal applied to terminal 792 with the reference potential Vr. It has the function of outputting to the gate driver 760.

[0064] The gate driver 760 is based on the output from comparator 771, and transistor 7 By controlling the gates of 62 and transistor 763, from terminal 791 It can output a signal whose amplitude is the difference between a high potential VH and a low potential VL.

[0065] As shown in Figure 1B, the signal applied to terminal 792 is divided by a resistor and then passed to comparator 77. It may be applied to the non-inverting input terminal or the inverting input terminal of 1. Figure 1B shows terminal 792 and terminal An example of resistance division is shown, where resistors 774 and 775 are placed between 795 and the resistor.

[0066] The amplifier 750 shown in Figure 2A has a different power supply control circuit configuration 761 compared to Figure 1B. The power control circuit 761 of the amplifier 750 shown in 2A includes a comparator 771, and a comparator 772, carrier wave generation circuit 773, resistor element 774, resistor element 775 and terminal REF It has. The signal applied to terminal 792 is resisted by resistors 774 and 775. The signal is split and supplied to either the non-inverting input terminal or the inverting input terminal of comparator 772. The other terminal of the non-inverting input terminal and the inverting input terminal of comparator 772 is terminal REF. Electrically connected. One of the non-inverting input terminals and the inverting input terminal of comparator 771 is connected. On one side, the output terminal of comparator 772 is electrically connected, and on the other side, the carrier wave generation circuit 77 3 is electrically connected. The output terminal of comparator 771 is electrically connected to gate driver 760. They are connected by air.

[0067] The carrier wave generation circuit 773 has the function of generating and outputting a carrier wave. Various carrier waves can be used. Various waveforms can be used, such as triangular waves.

[0068] The comparator 772 obtains the result of comparing the input signal from terminal 792 with the reference potential Vr. It has the function of outputting the signal A to comparator 771. Comparator 771 is a signal Signal B is obtained as a result of comparing signal A with the carrier wave provided by the carrier wave generation circuit 773. It has the function of outputting to the gate driver 760.

[0069] The control method of the power control circuit 761 shown in Figures 1A and 1B is a hysteresis control method. The control method of the power supply control circuit 761 shown in 2A is PWM (Pulse Width Modulation) These are sometimes referred to as control methods (or rations).

[0070] Transistors 762 and 763 are power MOSFETs (Power It is sometimes called a MOSFET, or a power transistor. Transistor 76 Transistors 2 and 763 may have parasitic diodes. Parasitic diodes are reverse current diodes. It has functions such as prevention and rectification. Furthermore, parasitic diodes have a high voltage between the source and drain. This function mitigates electric field concentration when a certain force is applied, thereby suppressing transistor destruction or degradation. It has the following. Furthermore, a diode element may be provided separately in place of or in combination with the parasitic diode. Alternatively, it may be connected in parallel with the transistor.

[0071] Figure 2B shows an example of the configuration of the gate driver 760. Further details will be provided later.

[0072] The gate driver 760 shown in Figure 2B has terminal G1, terminal G2, and two driver circuits. It has 760a and, of the two driver circuits 760a, one is connected to terminal G1. The other end is connected to terminal G2. The driver circuit 760a is connected to terminal G1 or terminal G2. A buffer circuit 104 and a buffer circuit 103 connected to the buffer circuit 104, A level shift circuit 102 is connected to the buffer circuit 103, and to the level shift circuit 102 It has a connected buffer circuit 101 and a transistor 121. and has transistor 122. Transistor 121 has a source and a drain. One is electrically connected to terminal V1, and the other is connected to the source and drain of transistor 122. It is electrically connected to one side. The source and drain of transistor 122 are connected to the other side. Terminal V2 is electrically connected.

[0073] Semiconductor layer in which the channel is formed, as transistors 121 and 122 Oxide semiconductors (Oxide Semiconductors) are a type of metal oxide. A transistor containing S (also called an "OS transistor" or "OS-FET") It is preferable to use it. OS transistors are manufactured by sputtering, CVD, ALD, These can be formed using thin film formation methods such as the transistor 121 and transistor OS transistor is used as 122, and transistors 762 and 763 At least one channel-forming region contains silicon, germanium, silicon-germanium, Gallium arsenide, gallium aluminum arsenide, indium phosphide, silicon carbide, A transistor having one or more selected from zinc lentide, gallium nitride, and gallium oxide. By using this, at least one of transistors 762 and 763 After installation, OS transistors can be stacked and installed using the thin-film formation method or the like. Therefore, the circuit area, chip area, etc. of amplifier 750 can be reduced. The integration density of the width unit 750 can be improved. Also, transistor 762, transistor Since the Ta763 and other OS transistors can be stacked, the wiring can be routed in a manner that This can reduce the noise level, potentially improving the characteristics and reliability of the amplifier 750.

[0074] The amplifier 750 shown in Figure 3 differs from the power supply control circuit 761 in configuration from Figure 2, and the capacitive element 77 6. It has resistive elements 777, 778 and 779. It also has terminal 793 The output from terminal 791, rather than the output from terminal 778, is transmitted to comparator 7 via resistor 778. A feed is sent to one of the 72 non-inverting input terminals and inverting input terminals (hereinafter referred to as terminal Ci1). It will be reversed.

[0075] In Figure 3, a capacitive element 776 and a resistive element 777 are provided between terminal Ci1 and terminal 792. It can be done. One electrode of the capacitive element 776 is electrically connected to terminal 792, and the other electrode is It is electrically connected to one terminal of the resistor element 777. The other terminal of the resistor element 777 is terminal The child Ci1, one terminal of the resistor element 778, and one electrode of the capacitor element 779 are electrically connected. It is connected to the other terminal of the resistive element 778, which is electrically connected to terminal 791. The other electrode of sub-electrode 779 is electrically connected to the output terminal of comparator 772.

[0076] Comparator 772 and capacitance element 779 function as an integrating circuit.

[0077] By providing feedback from terminal 791 to terminal Ci1, for example, terminal 793 This can reduce distortion, noise, etc., in the output signal obtained.

[0078] The amplifier 750 shown in Figure 3 can be suitably used, for example, to amplify acoustic signals.

[0079] This embodiment can be appropriately combined with descriptions of other embodiments.

[0080] (Embodiment 2) In this embodiment, the configuration of a driver circuit applicable to a semiconductor device according to one aspect of the present invention is described. The operation and an example of a semiconductor device configuration using the driver circuit will be described.

[0081] Figure 4 shows an example of the driver circuit 760a of the gate driver 760 in the previous embodiment. This is a circuit diagram showing the following. The driver circuit 760a shown in Figure 4 is a buffer circuit 101, level It includes a shift circuit 102, a buffer circuit 103, and a buffer circuit 104.

[0082] The driver circuit 760a described in this embodiment includes a buffer circuit 101 and a buffer circuit 103, the buffer circuit 104 and the level shift circuit 102 are constructed using transistors of the same polarity. Therefore, the driver circuit 760a has a transistor installed within the driver circuit 760a. The transistor can be constructed using unipolar transistors.

[0083] Furthermore, in the driver circuit 760a, a capacitive element is provided within the level shift circuit 102, and the capacitance A signal is applied to boost the voltage through the element, and the signal boost is performed using capacitive coupling in the capacitive element. The configuration is designed to apply pressure. In this configuration, the source of the transistor in the level shift circuit 102 is The voltage applied across the drains is the voltage applied to the capacitive element in the level shift circuit 102. This allows for a smaller size and suppresses dielectric breakdown of the transistor.

[0084] Next, we will describe each of the circuits in the driver circuit 760a.

[0085] The buffer circuit 101 processes the PWM signal output from the microcontroller, etc., into the level shift circuit 1 Convert 02 into an operable signal with increased boost and / or charge supply capability. This is a circuit that has the function of outputting. Through terminals IN_H and IN_L, the microcontroller The PWM signal output from the above is input to the buffer circuit 101. The signal output from 1 is the signal input to the level shift circuit 102.

[0086] In Figure 4, the PWM signal output from the microcontroller, etc., is the first signal (in the figure, 1st si (Denoted as gnal). Also, in Figure 4, the output from buffer circuit 101 is level The signal input to the shift circuit 102 is the second signal (shown as 2nd signal in the figure). Note) The PWM signal is handled by buffer circuit 101, level shift circuit 102, and The boosted PWM signal is then boosted through the buffer circuit 103. To alternately make transistors 121 and 122 of 04 conduct electricity It's a signal.

[0087] In Figure 4, an example of a PWM signal is shown, input from terminals IN_H and IN_L. Two signals are shown, but the program is not limited to these. For example, three or more PMW signals can be buffed. The configuration may also involve inputting to circuit 101. Note that input is received from terminals IN_H and IN_L. The two signals being processed are preferably inverted signals of each other.

[0088] The level shift circuit 102 consists of transistor 111, transistor 112, and capacitive element 11 It has 3 and a capacitive element 114. One electrode of the capacitive element 113 and one electrode of the capacitive element 114 The output from buffer circuit 101 is applied to the electrode. The source of transistor 111 And one end of the drain is connected to terminal V2, the other to the gate of transistor 112, and the capacitive element 1 The other electrode of 13 is electrically connected to the source of transistor 112. One end of the drain is connected to terminal V2, and the other end is connected to the gate of transistor 111 and the capacitive element 114. The other electrode of one electrode is electrically connected to the other electrode of the other electrode.

[0089] The level shift circuit 102 uses the second signal output from the buffer circuit 101 to perform the following: This circuit has the function of boosting the voltage of the PWM signal output from a microcontroller or the like, and outputting it. The signal input to the level shift circuit 102 is transmitted to the capacitive elements 113 and 114. The given signal is the signal output from buffer circuit 101. Also, buffer circuit 101 The output signal is the signal input to the level shift circuit 102.

[0090] The second signal supplied to the level shift circuit 102 is transmitted to the capacitive element 113 and the capacitive element 11 The voltage is boosted by capacitive coupling at 4. The second signal, boosted by capacitive coupling, is connected to terminal V. The voltage applied to 2 (hereinafter referred to as voltage v2a) is further boosted, and then the buffer circuit 103 is... The output is shown in Figure 4, where the output comes from the level shift circuit 102 and is input to the buffer circuit 103. The signal that is performed is referred to as the third signal (indicated as "3rd signal" in the diagram). The first signal and the third signal are originally signals applied to terminals IN_H and IN_L. .

[0091] Transistors 111 and 112 are transistors that function as switches. Furthermore, transistors 111 and 112 have the same polarity. It is a transistor. As an example, Figure 4 shows transistors 111 and 112. An example using an n-channel transistor is shown.

[0092] The operation of transistors 111 and 112 involves the capacitive element 113 and the capacitance At the timing when one of the second signals input to element 114 becomes high level, it is set to high level. A transistor with its gate connected to a capacitive element is made to conduct. Conversely, the capacitive element 113 And at the timing when the other of the second signal input to the capacitive element 114 becomes L level, A transistor with a gate connected to a capacitive element is made non-conductive. For example, When the second signal input to the quantitative element 113 is set to a high level, the transistor 112 enters a conducting state. Therefore, if the second signal input to the capacitive element 114 is set to L level, then transistor 111 This becomes a non-conductive state. Also, if the second signal input to the capacitive element 113 is at the L level, then When the transistor 112 becomes non-conductive, the second signal input to the capacitive element 114 is raised to H level. If this is the case, transistor 111 will be in a conductive state.

[0093] During the period when transistor 111 is conducting, the source and drain of transistor 111 Capacitive element 113 connected to one side of the input, and transistor 112 which is in a non-conductive state. Current flows from terminal V2 to node N1, to which the gates are connected, and the node is charged. It is charged (first action).

[0094] On the other hand, transistor 112 operates in the opposite way to transistor 111. That is, During the period when transistor 112 is conducting, the source and drain of transistor 112 On one side, the capacitive element 114 is connected, as well as the gate of the transistor 111, which is in a non-conductive state. , and current flows from terminal V2 to node N2 which is connected to each other, and the node is charged. (The first action).

[0095] Next, during the period when transistor 111 is in a non-conductive state, the source of transistor 111 and the capacitive element 113 connected to one side of the drain, and the gate of the transistor 112, The nodes that are connected to each other become electrically floating. At this time, the capacitance A high level is applied to element 113. Then, the potential of the node, which is electrically floating, is The voltage is further increased by capacitive coupling. This signal, boosted by capacitive coupling, then combines with the third signal. Then, it is output to the buffer circuit 103 (second operation).

[0096] On the other hand, during the period when transistor 112 is in a non-conductive state, the source of transistor 112 and the capacitive element 114 connected to one side of the drain, and the gate of the transistor 111, The nodes that are connected to each other become electrically floating. A high level is applied to element 114. Then, the potential of the node, which is in an electrically floating state, The voltage is further increased by capacitive coupling. This signal, boosted by capacitive coupling, then combines with the third signal. Then, it is output to the buffer circuit 103 (second operation).

[0097] By repeating the first and second operations described above, the level shift circuit 102 will A third signal can be output by boosting the voltage of the second signal.

[0098] Furthermore, capacitive elements 113 and 114 are elements that do not undergo dielectric breakdown by high voltage. It is desirable to do so. The capacitance of capacitive elements 113 and 114 is determined by the buffer circuit 10 It is preferable that the size be five times or more, preferably ten times or more, the size of the gate capacity of 3. When the capacitance of capacitive elements 113 and 114 is increased, the second signal is, It is preferable to use the circuit 101 to enhance the charge supply capability of the signal.

[0099] Furthermore, in order to increase the capacitance, the capacitive elements 113 and 114 are used in the semiconductor device. The transistor may be mounted on a separate substrate from the substrate on which the transistor is formed.

[0100] The capacitances of capacitive elements 113 and 114 may be the same or different. That's good too.

[0101] In the configuration of the level shift circuit 102 shown in Figure 4, capacitive elements 113 and 114 In contrast, it has a configuration that uses capacitive coupling to provide a second signal. With this configuration, the transistor A high voltage is applied directly between the source and drain of transistors 111 and 112. This eliminates the problem of transistor dielectric breakdown. This ensures that the drive circuit for driving the inverter operates correctly and prevents malfunctions. This is possible. Furthermore, it is possible to eliminate the through-current flowing through the level shift circuit 102. This allows for reduced power consumption.

[0102] The buffer circuit 103 buffers the third signal output from the level shift circuit 102. The circuit 104 is boosted to an operable signal and / or converted into a signal with increased charge supply capability. This is a circuit that has the function of controlling the signal. The signal input to the buffer circuit 103 is controlled by the buffer circuit This is the signal applied to the gate of transistor 103. Also, buffer circuit 103 The signal output from this is the signal input to the buffer circuit 104.

[0103] In Figure 4, the signal applied to the gate of the transistor in the buffer circuit 103 is divided into three parts. This is referred to as signal 3. Also, in Figure 4, it is output from buffer circuit 103, and buffer circuit The signal input to 104 is referred to as the fourth signal (indicated as "4th signal" in the diagram). The fourth signal is originally the signal applied to terminals IN_H and IN_L.

[0104] In Figure 4, a buffer circuit 1 is located between the level shift circuit 102 and the buffer circuit 104. The diagram shows a configuration with 03, but a configuration with multiple buffer circuits is also possible. Alternatively, A delay circuit such as a flip-flop is placed between the level shift circuit 102 and the buffer circuit 104. It may also be configured to include such a feature.

[0105] The buffer circuit 104 has transistors 121 and 122. The signal output by circuit 104 is transmitted via the output terminal OUT to an externally installed power MO This is supplied to the SFET.

[0106] The voltage applied to terminal V1 (hereinafter referred to as voltage v1a) is connected to the output terminal OUT. This is the voltage required to switch the power MOSFET to a conductive state. Also, voltage v2a is the output voltage. This is the voltage used to switch the power transistor connected to terminal OUT to a non-conductive state. The buffer circuit 104 switches the power MOSFET connected to the output terminal OUT. To control the signal, the voltage output from the output terminal OUT is used as the voltage from terminal V1 or terminal V The output is switched based on the voltage from point 2. Note that voltage v1a may also refer to the first voltage. Also, voltage v2a is sometimes referred to as the second voltage. Note that voltages v1a and v2a are Based on the high power supply potential VDD, the voltage generated by boosting it using a bootstrap circuit is It is preferable that there be a higher voltage v1a and voltage v2a when the high power supply potential VDD is higher. If the voltage is low, it may be a voltage generated by stepping down the high power supply potential VDD. Voltage v1a and voltage v2a may be voltages supplied directly from an external source. a is a voltage greater than voltage v2a.

[0107] The buffer circuit 104 uses the fourth signal output from the buffer circuit 103 to determine the power This is a circuit that has the function of outputting a voltage to switch between conduction and non-conductivity of a transistor. The signal input to buffer circuit 104 is processed by transistor 1 of buffer circuit 104. This is the signal applied to the gate of transistor 21 or transistor 122. Also, buffer circuit 104 The signal output from is output via the output terminal OUT and connected to an external power transformer. This is a signal that switches between conduction and non-conductivity of the transistor. Note that transistor 121 and the transistor The fourth signal applied to the gate of TA122 is, as described above, originally to terminal IN_H and This is the signal applied to terminal IN_L. The fourth signal is from transistor 121 and transistor The terminals 1, 2, and 2 are alternately made conductive. Therefore, the signal output from the output terminal OUT is The signal is output when voltage v1a and voltage v2a are switched.

[0108] In the driver circuit 760a described above, the capacitive element 113 in the level shift circuit 102 The configuration also includes a configuration that applies a signal to the capacitive element 114 using capacitive coupling. High current is directly supplied between the source and drain of transistors 111 and 112. Since no pressure is applied, dielectric breakdown of the transistor can be eliminated. Therefore, the drive circuit for driving the power device can be operated in a normal state, and errors This prevents operation. Furthermore, it eliminates the through-current flowing through the level shift circuit 102. This allows for lower power consumption. Therefore, the reliability of amplifier 750 can be improved. This can be done. Also, the power consumption of the amplification circuit can be reduced. Also, the amplifier 750 In some cases, it may be possible to reduce the noise in the output signal.

[0109] Next, Figure 5 shows the specific circuit configuration and operation of the driver circuit 760a shown in Figure 4. This will be explained using Figure 9.

[0110] Figure 5 shows a specific example of the circuit configuration for the driver circuit shown in Figure 4. This is the diagram.

[0111] The buffer circuit 101 shown in Figure 5 connects inverter circuits 131 and 132. It has. Inverter circuits 131 and 132 are connected from terminal V3 and terminal GND. Each is given an electric potential. The GND terminal is given the ground potential. Also, the inverter Circuit 131 and inverter circuit 132 are transistors of level shift circuit 102 111 has a transistor with the same polarity as transistor 112.

[0112] Here, Figure 6A shows an n-channel type transistor as a transistor with the same polarity. An example of the circuit configuration of inverter circuit 131 and inverter circuit 132 is shown.

[0113] The inverter circuit 131 (or inverter circuit 132) shown in Figure 6A uses transistor 1 51, transistor 152, transistor 153, transistor 154, and capacitive element 1 It has 55 transistors 151, 152, 153 and 55. Transistor 154 is similar to transistors 111 and 112 in Figures 4 and 5. It is illustrated as an n-channel transistor.

[0114] Furthermore, at terminal V3, the level is determined by the charging and discharging of charge in the capacitive elements 113 and 114. A voltage is supplied to boost the voltage of the voltage shift circuit 102. The wire is designed to enable high-speed charging and discharging of the capacitive elements 113 and 114, and is designed to supply charge. A high supply capacity is preferable. The voltage applied to terminal V3 (hereinafter referred to as voltage v3a) is It can also be called a third voltage. Note that voltage v3a is based on the high power supply potential VDD, and is used for booting. It is preferable that the voltage is generated by boosting the voltage using a strap circuit. Also, voltage v3 If the high power supply potential VDD is a higher voltage, a internally steps down the high power supply potential VDD. The generated voltage may also be used. Note that voltage v3a is a voltage directly supplied from an external source. This is also acceptable. Voltage v3a is a voltage smaller than voltages v1a and v2a.

[0115] Transistors 151 and 152 have one of their terminals, source and drain, It is connected to terminal V3. Transistors 153 and 154 are also connected to the source and One terminal of the drain is connected to terminal GND. Capacitive element 155 is connected to transistor 1 It is located between the gate and the other terminals of the source and drain of 52. The inverter shown in Figure 6A The inverter circuit 131 (or inverter circuit 132) outputs a signal obtained by inverting the logic of the first signal. This is a circuit that can output a signal of type 2.

[0116] Note that the inverter circuit 131 (or inverter circuit 132) shown in Figure 6A is shown in Figure 6B. As shown, they are electrically arranged in series, and the logic of the first signal is inverted back to the original logic for the second signal. It may also be a circuit that can output a signal.

[0117] Furthermore, the level shift circuit 102 shown in Figure 5 is the same as the level shift circuit 102 described in Figure 4. The configuration is similar to that shown in Figure 5. In Figure 5, as in Figure 4, the transistors of the level shift circuit 102 The zista 111 and transistor 112 are shown as n-channel type transistors. .

[0118] Furthermore, the buffer circuit 103 shown in Figure 5 consists of transistors 141, 142, and It has a transistor 143 and a transistor 144. The buffer circuit 103 has terminal V4 and It is connected to terminal V2. The buffer circuit 103 outputs, as a fourth signal, a signal applied to the gates of transistors 121 and 122 of the buffer circuit 104, which is switched between the voltage (hereinafter referred to as voltage v4a) applied to terminal V4 based on the third signal and voltage v2a. Transistors 141, 142, 143, and 144 are illustrated as n-channel type transistors, similar to transistors 111 and 112 in FIGS. 4 and 5. The PWM signal applied to terminal IN_H shown in FIG. 5 is defined as PWM signal S_H, and the PWM signal applied to terminal IN_L is defined as PWM signal S_L. Note that voltage v4a is a voltage for further boosting the third signal in order to ensure the conduction of transistors 121 and 122. This boosting is, for example, when the third signal output via transistors 111 and 112 becomes a signal with a voltage reduced by the threshold voltage of the transistor, to prevent transistors 121 and 122 from not being conducted. Note that voltage v4a is sometimes referred to as the fourth voltage. Preferably, voltage v4a is a voltage generated by boosting using a bootstrap circuit based on the high power supply potential VDD. Also, when the high power supply potential VDD is a higher voltage, voltage v4a may be a voltage generated by降压 internally the high power supply potential VDD. Note that voltage v4a may be a voltage directly provided from the outside. Note that voltage v4a is the same as or greater than voltage v1a. FIG. 7 is a timing chart showing the operation of the circuit according to an aspect of the present invention. The PWM signal applied to terminal IN_H shown in FIG. 5 is defined as PWM signal S_H, and the PWM signal applied to terminal IN_L

[0119] Note that voltage v4a is a voltage for further boosting the third signal in order to ensure the conduction of transistors 121 and 122. This boosting is, for example, when the third signal output via transistors 111 and 112 becomes a signal with a voltage reduced by the threshold voltage of the transistor, to prevent transistors 121 and 122 from not being conducted. Note that voltage v4a is sometimes referred to as the fourth voltage. Preferably, voltage v4a is a voltage generated by boosting using a bootstrap circuit based on the high power supply potential VDD. Also, when the high power supply potential VDD is a higher voltage, voltage v4a may be a voltage generated by降压 internally the high power supply potential VDD. Note that voltage v4a may be a voltage directly provided from the outside. Note that voltage v4a is the same as or greater than voltage v1a. Note that voltage v4a is a voltage for further boosting the third signal in order to ensure the conduction of transistors 121 and 122. This boosting is, for example, when the third signal output via transistors 111 and 112 becomes a signal with a voltage reduced by the threshold voltage of the transistor, to prevent transistors 121 and 122 from not being conducted. Note that voltage v4a is sometimes referred to as the fourth voltage. Preferably, voltage v4a is a voltage generated by boosting using a bootstrap circuit based on the high power supply potential VDD. Also, when the high power supply potential VDD is a higher voltage, voltage v4a may be a voltage generated by降压 internally the high power supply potential VDD. Note that voltage v4a may be a voltage directly provided from the outside. Note that voltage v4a is the same as or greater than voltage v1a. is a voltage for further boosting the third signal in order to ensure the conduction of transistors 121 and 122. This boosting is, for example, when the third signal output via transistors 111 and 112 becomes a signal with a voltage reduced by the threshold voltage of the transistor, to prevent transistors 121 and 122 from not being conducted. Note that voltage v4a is sometimes referred to as the fourth voltage. Preferably, voltage v4a is a voltage generated by boosting using a bootstrap circuit based on the high power supply potential VDD. Also, when the high power supply potential VDD is a higher voltage, voltage v4a may be a voltage generated by降压 internally the high power supply potential VDD. Note that voltage v4a may be a voltage directly provided from the outside. Note that voltage v4a is the same as or greater than voltage v1a. Note that voltage v4a is a voltage for further boosting the third signal in order to ensure the conduction of transistors 121 and 122. This boosting is, for example, when the third signal output via transistors 111 and 112 becomes a signal with a voltage reduced by the threshold voltage of the transistor, to prevent transistors 121 and 122 from not being conducted. Note that voltage v4a is sometimes referred to as the fourth voltage. Preferably, voltage v4a is a voltage generated by boosting using a bootstrap circuit based on the high power supply potential VDD. Also, when the high power supply potential VDD is a higher voltage, voltage v4a may be a voltage generated by降压 internally the high power supply potential VDD. Note that voltage v4a may be a voltage directly provided from the outside. Note that voltage v4a is the same as or greater than voltage v1a. Note that voltage v4a is a voltage for further boosting the third signal in order to ensure the conduction of transistors 121 and 122. This boosting is, for example, when the third signal output via transistors 111 and 112 becomes a signal with a voltage reduced by the threshold voltage of the transistor, to prevent transistors 121 and 122 from not being conducted. Note that voltage v4a is sometimes referred to as the fourth voltage. Preferably, voltage v4a is a voltage generated by boosting using a bootstrap circuit based on the high power supply potential VDD. Also, when the high power supply potential VDD is a higher voltage, voltage v4a may be a voltage generated by降压 internally the high power supply potential VDD. Note that voltage v4a may be a voltage directly provided from the outside. Note that voltage v4a is the same as or greater than voltage v1a. Note that voltage v4a is a voltage for further boosting the third signal in order to ensure the conduction of transistors 121 and 122. This boosting is, for example, when the third signal output via transistors 111 and 112 becomes a signal with a voltage reduced by the threshold voltage of the transistor, to prevent transistors 121 and 122 from not being conducted. Note that voltage v4a is sometimes referred to as the fourth voltage. Preferably, voltage v4a is a voltage generated by boosting using a bootstrap circuit based on the high power supply potential VDD. Also, when the high power supply potential VDD is a higher voltage, voltage v4a may be a voltage generated by降压 internally the high power supply potential VDD. Note that voltage v4a may be a voltage directly provided from the outside. Note that voltage v4a is the same as or greater than voltage v1a. Note that voltage v4a is a voltage for further boosting the third signal in order to ensure the conduction of transistors 121 and 122. This boosting is, for example, when the third signal output via transistors 111 and 112 becomes a signal with a voltage reduced by the threshold voltage of the transistor, to prevent transistors 121 and 122 from not being conducted. Note that voltage v4a is sometimes referred to as the fourth voltage. Preferably, voltage v4a is a voltage generated by boosting using a bootstrap circuit based on the high power supply potential VDD. Also, when the high power supply potential VDD is a higher voltage, voltage v4a may be a voltage generated by降压 internally the high power supply potential VDD. Note that voltage v4a may be a voltage directly provided from the outside. Note that voltage v4a is the same as or greater than voltage v1a.​​​​​​​​​​​​​The PWM signal is denoted as PWM signal S_L. Also, the output signal applied to the output terminal OUT is output Let S_OUT be the power signal. PWM signals S_H, S_L, and output signal S_OUT. This can be represented as shown in the timing chart in Figure 7. Note that the PWM signal S_H, The voltage scales of the PWM signal S_L and the output signal S_OUT are shown with the same amplitude voltage. However, in reality, the amplitude voltage of the output signal S_OUT is the same as that of the PWM signal S_H and the PWM signal S It is smaller than the amplitude voltage of _L. Note that the voltage at which PWM signals S_H and S_L oscillate The position is raised by the buffer circuit 101, level shift circuit 102, and buffer circuit 103 described above. When pressed, the conduction of transistors 121 and 122 in the buffer circuit 104 This becomes the voltage that controls the state or non-conductive state. Then, in the driver circuit 760a, it is boosted. According to the PWM signals S_H and S_L, either voltage V1 or voltage V2 It can output a voltage signal S_OUT.

[0121] Furthermore, in the configuration of the driver circuit 760a shown in Figure 5, the low power supply potential of the buffer circuit 101 The voltage of the wiring that provides the voltage and the low power supply potential of buffer circuits 103 and 104 are provided. The voltage of the wiring and can be set to different voltages. Specifically, the voltage of the buffer circuit 101 The voltage of the wiring that supplies the power potential is set to the ground potential, and buffer circuit 103 and buffer circuit 10 The voltage of the wiring that provides the low power supply potential of 4 can be set to the voltage of terminal V2. When the current due to the reactance component accumulated in the line flows through the driver circuit 760a, PW This reduces malfunctions caused by the M signal flowing through terminals IN_H and IN_L. It is possible.

[0122] Transistors 111 and 112, as explained in Figures 5, 6A, and 6B, Transistors 121 and 122, 141 to 14 4. Transistors 151 to 154 are all n-channel type transistors. It is a converter. That is, the buffer circuit 101 and buffer circuit 10 of the semiconductor device 3. The buffer circuit 104 and the level shift circuit 102 are constructed using unipolar transistors. It is possible.

[0123] By constructing a semiconductor device with unipolar transistors, the drive cycle can be performed using complementary transistors. Compared to when a circuit is constructed, n-channel transistors and p-channel transistors The number of photomasks required to differentiate between the two can be reduced. Therefore, the configuration of the present invention This allows for a reduction in manufacturing costs.

[0124] The transistors that make up the semiconductor device have simply been replaced with unipolar transistors. So, when configuring a semiconductor device that converts a PWM signal into a high-voltage signal, the signal conversion is high Because voltage is used, there is a risk of dielectric breakdown of the transistor. On the other hand, in this embodiment... In a semiconductor device with the following configuration, the capacitive element 113 and the capacitive element 11 in the level shift circuit 102 The configuration provides a signal to transistor 4 using capacitive coupling. A high voltage is applied directly between the source and drain of transistor 11 and transistor 112. This eliminates the need for dielectric breakdown in transistors. Therefore, power devices This allows the drive circuit for driving the unit to operate in a normal state and prevents malfunctions. can.

[0125] Furthermore, in the semiconductor device of the present embodiment, the semiconductor device is configured with unipolar transistors. By doing so, transistors can be formed using a semiconductor material other than silicon for the semiconductor layer. As an example, transistors can be formed using an oxide semiconductor for the semiconductor layer. This is possible.

[0126] The oxide semiconductor has a larger energy gap compared to silicon, and the oxide semiconductor can extremely reduce the generation of carriers due to thermal excitation. Therefore, the transistors using the oxide semiconductor for the semiconductor layer do not deteriorate in characteristics even in a high-temperature environment and can keep the change in electrical characteristics small. Moreover, the oxide semiconductor is preferably a purified oxide semiconductor (purified OS) in which impurities such as moisture or hydrogen serving as electron donors (donors) are reduced and oxygen deficiency is reduced. The purified oxide semiconductor is of the i-type (intrinsic semiconductor) or extremely close to the i-type. Therefore, the transistors having a channel formation region in the purified oxide semiconductor layer have an extremely small off-current and high reliability in a high-temperature environment. The transistors using the oxide semiconductor having such characteristics are suitable as the transistors used in the semiconductor device of the present embodiment. Furthermore, the oxide semiconductor is preferably a purified oxide semiconductor (purified OS) in which impurities such as moisture or hydrogen serving as electron donors (donors) are reduced and oxygen deficiency is reduced. The purified oxide semiconductor is of the i-type (intrinsic semiconductor) or extremely close to the i-type. Therefore, the transistors having a channel formation region in the purified oxide semiconductor layer have an extremely small off-current and high reliability in a high-temperature environment. The transistors using the oxide semiconductor having such characteristics are suitable as the transistors used in the semiconductor device of the present embodiment. Moreover, the oxide semiconductor is preferably a purified oxide semiconductor (purified OS) in which impurities such as moisture or hydrogen serving as electron donors (donors) are reduced and oxygen deficiency is reduced. The purified oxide semiconductor is of the i-type (intrinsic semiconductor) or extremely close to the i-type. Therefore, the transistors having a channel formation region in the purified oxide semiconductor layer have an extremely small off-current and high reliability in a high-temperature environment. The transistors using the oxide semiconductor having such characteristics are suitable as the transistors used in the semiconductor device of the present embodiment.

[0127] In addition, the oxide semiconductor is particularly preferably a purified oxide semiconductor (purified OS) in which impurities such as moisture or hydrogen serving as electron donors (donors) are reduced and oxygen deficiency is reduced. The purified oxide semiconductor is of the i-type (intrinsic semiconductor) or extremely close to the i-type. Therefore, the transistors having a channel formation region in the purified oxide semiconductor layer have an extremely small off-current and high reliability in a high-temperature environment. The transistors using the oxide semiconductor having such characteristics are suitable as the transistors used in the semiconductor device of the present embodiment. Moreover, the oxide semiconductor is preferably a purified oxide semiconductor (purified OS) in which impurities such as moisture or hydrogen serving as electron donors (donors) are reduced and oxygen deficiency is reduced. The purified oxide semiconductor is of the i-type (intrinsic semiconductor) or extremely close to the i-type. Therefore, the transistors having a channel formation region in the purified oxide semiconductor layer have an extremely small off-current and high reliability in a high-temperature environment. The transistors using the oxide semiconductor having such characteristics are suitable as the transistors used in the semiconductor device of the present embodiment. Furthermore, the oxide semiconductor is preferably a purified oxide semiconductor (purified OS) in which impurities such as moisture or hydrogen serving as electron donors (donors) are reduced and oxygen deficiency is reduced. The purified oxide semiconductor is of the i-type (intrinsic semiconductor) or extremely close to the i-type. Therefore, the transistors having a channel formation region in the purified oxide semiconductor layer have an extremely small off-current and high reliability in a high-temperature environment. The transistors using the oxide semiconductor having such characteristics are suitable as the transistors used in the semiconductor device of the present embodiment. Moreover, the oxide semiconductor is preferably a purified oxide semiconductor (purified OS) in which impurities such as moisture or hydrogen serving as electron donors (donors) are reduced and oxygen deficiency is reduced. The purified oxide semiconductor is of the i-type (intrinsic semiconductor) or extremely close to the i-type. Therefore, the transistors having a channel formation region in the purified oxide semiconductor layer have an extremely small off-current and high reliability in a high-temperature environment. The transistors using the oxide semiconductor having such characteristics are suitable as the transistors used in the semiconductor device of the present embodiment. Furthermore, the oxide semiconductor is preferably a purified oxide semiconductor (purified OS) in which impurities such as moisture or hydrogen serving as electron donors (donors) are reduced and oxygen deficiency is reduced. The purified oxide semiconductor is of the i-type (intrinsic semiconductor) or extremely close to the i-type. Therefore, the transistors having a channel formation region in the purified oxide semiconductor layer have an extremely small off-current and high reliability in a high-temperature environment. The transistors using the oxide semiconductor having such characteristics are suitable as the transistors used in the semiconductor device of the present embodiment. Moreover, the oxide semiconductor is preferably a purified oxide semiconductor (purified OS) in which impurities such as moisture or hydrogen serving as electron donors (donors) are reduced and oxygen deficiency is reduced. The purified oxide semiconductor is of the i-type (intrinsic semiconductor) or extremely close to the i-type. Therefore, the transistors having a channel formation region in the purified oxide semiconductor layer have an extremely small off-current and high reliability in a high-temperature environment. The transistors using the oxide semiconductor having such characteristics are suitable as the transistors used in the semiconductor device of the present embodiment. Moreover, the oxide semiconductor is preferably a purified oxide semiconductor (purified OS) in which impurities such as moisture or hydrogen serving as electron donors (donors) are reduced and oxygen deficiency is reduced. The purified oxide semiconductor is of the i-type (intrinsic semiconductor) or extremely close to the i-type. Therefore, the transistors having a channel formation region in the purified oxide semiconductor layer have an extremely small off-current and high reliability in a high-temperature environment. The transistors using the oxide semiconductor having such characteristics are suitable as the transistors used in the semiconductor device of the present embodiment.

[0128] The transistor has a significantly low off-current and improved reliability in high-temperature environments. This can be achieved. Therefore, the transistors constituting the driver circuit 760a change temperature This prevents malfunctions that may occur due to the change. Furthermore, the driver circuit 760a is high temperature To prevent this from happening, the power transistor and driver circuit are installed with a certain distance between them beforehand. This eliminates the need for placement constraints such as the provision of countermeasures.

[0129] In the configuration of the driver circuit 760a shown in Figure 5, the output terminal OUT is shown in Figure 8A. This can be separated into two output terminals, OUT_H and OUT_L. Figure 8A As shown, the output terminals are separated into two: output terminal OUT_H and output terminal OUT_L. This reduces the through-current flowing between terminal V1 and terminal V2.

[0130] Furthermore, the driver circuit 760a shown in Figure 8A is simplified in a block diagram, as shown in Figure 8B. It can be expressed as follows.

[0131] Next, using the block diagram in Figure 8B, a low-speed circuit for driving the power transistor is used. An example of an application of a semiconductor device used as a driver is shown in Figure 9.

[0132] Figure 9 shows an example of a gate driver 760, using the driver circuit 760a from Figure 8A. The low-side driver is shown. Also, Figure 9 shows the output from the gate driver 760. The power MOSFETs that can be used are transistors 762 and 763. The circuit control 211, which supplies signals to the gate driver 760, is also shown. .

[0133] The gate driver 760 shown in Figure 9 consists of two driver circuits 760a (hereinafter referred to as driver circuits) It has a circuit 760a1 and a driver circuit 760a2. Also, in the configuration shown in Figure 9 In addition, there is a control circuit 211, photocouplers 212 and 213, and a reference voltage generator. Circuits 214 to 216, diodes Di1 to Di3, capacitive elements Cap1 to Cap4, It has transistors 762 and 763. In the circuit diagram shown in Figure 9, Resistors placed on wiring are elements that are used to convert the flowing current into voltage. In the circuit diagram shown in Figure 9, voltage PHV and voltage PGND are connected to transistor 7. This is the voltage to be applied to the load (not shown) connected to transistors 62 and 763.

[0134] For example, the power control circuit 761 shown in Figure 2 can be used as the control circuit 211.

[0135] Driver circuits 760a1 and 760a2 receive the output from control circuit 211. The PWM signal is transmitted via photocoupler 212 and photocoupler 213, or through wiring. It is given as follows. In addition, the driver circuit 760a1 has terminals V1, V2 and V3, reference Voltages are supplied from voltage generation circuits 214 to 216, respectively. Note that voltage v4a is, The driver circuit 760a1 receives the output from the reference voltage generation circuits 214, 215, and 216. The voltage applied is passed through diodes Di1 and Di2, and capacitive elements Cap1 and Cap2. The voltage is boosted using this method and then applied.

[0136] In the low-side driver configuration shown in Figure 9, the terminal GN of the driver circuit 760a1 A diode Di3 is placed between D and terminal V2 so that the current can flow in both directions. In this diode Di3, the voltage difference between terminal GND and terminal V2 changed significantly. To prevent malfunctions in certain situations, and to avoid large potential differences between the terminals, a short circuit is implemented. These are elements that should be provided, and they should be provided as needed.

[0137] The driver circuit shown in this embodiment has the buffer circuit and level shift circuit with the same polarity. It is composed of transistors. Therefore, the transistors placed in the driver circuit are unipolar. It can be constructed using transistors.

[0138] Furthermore, in the driver circuit, a capacitive element is provided within the level shift circuit, and the boost is transmitted through this capacitive element. A configuration that applies a signal to apply pressure and boosts the signal using capacitive coupling in the capacitive element. In this configuration, the current is applied between the source and drain of the transistor in the level shift circuit. The voltage applied can be made smaller than the voltage applied to the capacitive element in the level shift circuit, and the transition This can suppress dielectric breakdown of the sta.

[0139] This embodiment can be implemented in appropriate combination with other embodiments.

[0140] (Embodiment 3) This embodiment shows an example of the configuration of a comparator according to one aspect of the present invention.

[0141] Figure 10 shows a comparator applicable to the comparator of the amplifier described in the previous embodiment. An example of the configuration of comparator 50 is shown. Comparator 50 consists of transistors 21 to transistors It has 25. The comparator 50 is supplied with the wiring VBM_IN, the first potential. Wire VBP_IN is supplied with a potential of 2, and wire VB3_I is supplied with a predetermined potential of VB3. N, input terminal CP1_IN, input terminal CM1_IN, output terminal CP1_OUT, and It has an output terminal CM1_OUT.

[0142] Here, the predetermined potential VB3 is a higher potential than the second potential. Also, comparator 5 At 0, the second potential is the high power supply potential, and the first potential is the low power supply potential.

[0143] In the comparator 50, either the source or the drain of the transistor 21 is connected to the wiring. Electrically connected to VBM_IN, the other of the source or drain of transistor 21 is Either the source or drain of transistor 22, and the source of transistor 24 The gate of transistor 21 is electrically connected to one side of the drain, and the wiring VB3_I It is electrically connected to N.

[0144] The source or drain of transistor 22, the other of which is the source or drain of transistor 23. One side of the drain and the output terminal CM1_OUT are electrically connected to transistor 2 The source or drain of transistor 3, and the gate of transistor 23 are connected via wiring VBP_ The gate of transistor 22 is electrically connected to the input terminal CP1_IN. It connects to the network.

[0145] The source or drain of transistor 24, the other of which is the source or drain of transistor 25. One side of the drain is electrically connected to the output terminal CP1_OUT, and transistor 2 The source or drain of transistor 5, and the gate of transistor 25 are connected via wiring VBP_ The gate of transistor 24 is electrically connected to the input terminal CM1_IN. It connects to the network.

[0146] Alternatively, multiple circuits as shown in Figure 10 may be connected in parallel and used as a comparator 50. That is, the output of the comparator shown in Figure 10 is input to the next stage comparator 50, and multiple A comparator may also be connected and used.

[0147] This embodiment can be appropriately combined with descriptions of other embodiments.

[0148] (Embodiment 4) An example of a semiconductor device configuration applicable to the amplifier described in the above embodiment will be described.

[0149] The semiconductor device shown in Figure 11 includes transistor 300, transistor 500, and a capacitive element. It has 600 and. In the example shown in Figure 11, the semiconductor device has multiple transistors. It has a Zista 300.

[0150] Figure 14A is a cross-sectional view of transistor 500 in the channel length direction, and Figure 14B is a cross-sectional view of transistor 500. This is a cross-sectional view of the STA500 in the channel width direction.

[0151] Transistor 500 is an OS transistor. Transistor 500 has an off current. Because it is small, it can be used in transistors in semiconductor devices. It is possible to retain written data for a long period of time.

[0152] Transistor 500 is, for example, an n-channel transistor.

[0153] Here, in the semiconductor device 751 of the amplifier 750 described in the previous embodiment, The power driver 760 and the power control circuit 761 are shown as transistor 500. It can be constructed using transistors 762 and 7. At least one of 63 can be a transistor shown as transistor 300. Cut.

[0154] As shown in Figure 11, transistors 500 and 300 can be stacked. Therefore, for example, as transistor 762 (or transistor 763) in Figure 11 When transistor 300 is used, the components of the semiconductor device 751, such as the gate driver, are used. 760, power control circuit 761, etc. are constructed using transistor 500. These can be stacked on top of 762 (or transistor 763). Only a portion of the circuit may be stacked on top of the transistor 300.

[0155] The semiconductor device described in this embodiment includes a transistor 300, as shown in Figure 11. It has transistor 500 and capacitive element 600. Transistor 500 is a component of transistor 300. The capacitive element 600 is located above the transistors 300 and 500. It is provided in [location]. Layer 385 is the layer on which transistor 300 is provided. Figure 11 shows [location]. For example, layer 385 is sandwiched between substrate 311 and each layer between substrate 311 and insulator 322, It has. Layer 585 is the layer on which the transistor 500 is provided. Figure 11 shows an example. For example, layer 585 has layers sandwiched between insulators 514 and 574. Substrate 311, insulation The edge 322, insulator 514, and insulator 574 will be described later.

[0156] The capacitance element of the amplifier 750 described in the previous embodiment is shown in Figure 11. 600 can be used. For example, gate driver 760 and power control circuit 761 Capacitive element 600 can be used as the capacitive element.

[0157] The transistor 300 is mounted on the substrate 311 and consists of a conductor 316, an insulator 315, and the substrate A semiconductor region 313 consisting of part of 311, which functions as a source region or drain region. It has a diffuse layer 314a and a diffuse layer 314b. The conductor 316 is the gateway of the transistor 300. It can function as a gate. The insulator 315 serves as the gate insulating film of the transistor 300. It can function in such a way. The diffusion layers 314a and 314b are, for example, in the low-resistance region. be.

[0158] Note that transistor 300 is, for example, transistor 762 as shown in the above embodiment. It can be used with transistor 763.

[0159] Figure 12 shows a different configuration of transistor 300 compared to Figure 11. The inverter 300 is configured such that a portion of region 319 is formed to a greater depth. 319 will be discussed later.

[0160] The transistor 300 shown in Figures 11 and 12 is a transistor having a planar structure. It's Zista.

[0161] Figure 13 also shows an example of a transistor 300 having a trench-type structure.

[0162] The transistor 300 illustrated in Figures 11, 12, and 13 is a power MOSFET. It can be suitably used, and is particularly applicable to transistors 762 and 763. This is preferable. The transistor 300 shown in Figures 11, 12, and 13 is D-MOS (Dub le Diffusion Metal Oxide Semiconductor)F It is sometimes referred to as ET.

[0163] The transistor 300 shown in Figure 11 is a transistor having a planar structure. The diffusion layer 314a and the diffusion layer 314b are designated as the source region and the drain region, respectively. By using it as a region, it can be operated as a MOSFET, but here it is expanded Both the diffuse layer 314a and the diffuse layer 314b function as sources, and the diffuse layer 314a and diffuse layer A region 319 is formed outside the dispersed layer 314b, relative to the semiconductor region 313 of the silicon substrate. In the cross-section shown in Figure 11, a diffusion layer 317 that functions as a drain is provided in the lower region. By doing so, transistor 300 can function as a D-MOSFET. .

[0164] Furthermore, a back electrode 318 is provided below the diffusion layer 317 to function as a drain electrode. This can be done. Furthermore, both diffusion layer 314a and diffusion layer 314b can function as drains. Alternatively, the diffusion layer 317 may be used as a source.

[0165] Region 319 is preferably a region with polarity opposite to that of diffusion layers 314a and 314b. For example, if diffusion layers 314a and 314b are n-type regions, then region 319 is p It is preferable that it be a type region. Alternatively, region 319 may be a high-resistance region. Region 31 9 may be an intrinsic region. Diffusion layers 314a and 314b are regions of opposite polarity. A pn junction is formed by contact with a certain region 319. In this invention document, it is sometimes called a parasitic diode. Parasitic diodes are used for reverse current prevention, rectification, It has functions such as those listed above. Furthermore, parasitic diodes have the function of protecting transistors. The diode is formed between the diffusion layer 314a and the diffusion layer 314b and the diffusion layer 317. This reduces electric field concentration when a high voltage is applied between the source and drain, This can suppress the destruction or deterioration of the transistor.

[0166] It is preferable that a conductor 328b be provided on the upper surfaces of diffusion layers 314a and 314b. It would also be preferable to provide a conductor 328b on the upper surface of region 319.

[0167] Note that diffusion layers 314a, 314b, and 317 may not be provided. Even if these diffusion layers are not provided, the conductor 32 connects to the semiconductor region 313 of the substrate 311. 8b, back electrode 318, etc. are provided so that these electrodes are source electrodes, drain electrodes It may function as a pole or similar.

[0168] Here, it is preferable to polish the substrate 311 before providing the back surface electrodes. For example, the substrate By polishing 311, the natural oxide film and other materials on the surface of substrate 311 are removed, suppressing the increase in resistance. It can be controlled. Also, the thickness of the substrate 311 can be reduced by polishing the substrate 311. Preferably, the thickness of the substrate 311 is 5 μm or more and 300 μm or less, and 10 μm A thickness of 150 μm or less is more preferable. By reducing the thickness of the substrate 311, transient In the STA300, the distance between the source and drain can be shortened, and the transistor's The current can be increased.

[0169] In this case, when the substrate 311 is polished to make it thinner, the opposing side, specifically, for example, the conductor 6 It is preferable to provide a support substrate on 32 and the insulator 640. For example, the support substrate is Alternatively, a resin substrate or the like can be used as the support substrate. This is also acceptable. A removable adhesive may be used as the adhesive layer. In such cases, the base When polishing plate 311, the first support substrate is bonded with an adhesive layer, and after polishing, the back A surface electrode 318 is formed, and a second support substrate is placed on the side opposite to the first support substrate so as to cover the back surface electrode 318. A support substrate is provided, and after removing the first support substrate, the conductor 632 is exposed. Then the conductor The electrode 632 is bonded using bumps, wire bonding, and clip bonding with conductive clips. Connect using ng, etc.

[0170] Note that transistor 300 can be either a p-channel or n-channel type. .

[0171] The region in which the channel of the semiconductor region 313 is formed, the region near it, the source region, or In the diffusion layers 314a, 314b, 317, etc., which constitute the rain region, silico It is preferable that the semiconductor contains semiconductors such as silicon-based semiconductors, and it is preferable that it contains single-crystal silicon. Alternatively, Ge (germanium), SiGe (silicon germanium), GaAs (gallium Arsenic, GaAlAs (gallium aluminum arsenide), InP (indium phosphide), S iC (silicon carbide), ZnSe (zinc selenide), GaN (gallium nitride), G It may also be formed from a material containing aOx (gallium oxide; x is a real number greater than 0), etc. This silicon uses a structure in which the effective mass is controlled by applying stress to the crystal lattice and changing the lattice spacing. This configuration is also possible. Alternatively, by using GaAs and GaAlAs, etc., transistor 300 HEMT (High Electron Mobility Transistor) That is also acceptable.

[0172] Diffusion layer 314a, diffusion layer 314b, and diffusion layer 317 are applied to semiconductor region 313. In addition to semiconductor materials, elements that impart n-type conductivity, such as arsenic and phosphorus, or boron, etc. It contains an element that imparts p-type conductivity.

[0173] The conductor 316, which functions as a gate electrode, imparts n-type conductivity to arsenic, phosphorus, etc. Semiconductor materials such as silicon containing elements, or elements that impart p-type conductivity, such as boron. Conductive materials such as cellulose, metallic materials, alloy materials, or metal oxide materials can be used.

[0174] Furthermore, since the work function is determined by the material of the conductor, the material of the conductor must be selected accordingly. This allows you to adjust the threshold voltage of the transistor. Specifically, by using nitride in the conductor... It is preferable to use materials such as tan or tantalum nitride. Furthermore, both conductivity and embedding properties are desirable. To achieve this, metal materials such as tungsten and aluminum are used as laminates in the conductive material. This is preferable, and using tungsten is particularly preferable in terms of heat resistance.

[0175] Note that the transistor 300 shown in Figure 11 is just one example, and its structure is not limited to that example. Appropriate transistors should be used depending on the configuration and driving method. For example, a semiconductor device can use an OS transistor. When composed solely of transistors, the configuration of transistor 300 uses oxide semiconductors. The same configuration as transistor 500 should be used. For details on transistor 500, see below. I will explain that later.

[0176] The transistor 300 is covered by insulators 320, 322, 324, and The bodies 326 are arranged in a series of stacked units.

[0177] As insulators 320, 322, 324, and 326, for example, oxidative Silicon, silicon oxide nitride, silicon nitride, silicon nitride, aluminum oxide, acid Aluminum nitride, aluminum nitride oxide, aluminum nitride, etc., can be used.

[0178] In this specification, silicon oxidnitride refers to a material whose composition contains more oxygen than nitrogen. It refers to materials with a high content of nitrogen, and silicon nitride, in terms of its composition, contains more nitrogen than oxygen. This indicates a material with a high concentration of [amount]. Furthermore, in this specification, aluminum oxide nitride is defined as [component]. It refers to a material in which the oxygen content is higher than the nitrogen content, and aluminum nitride oxide is a combination of these materials. This refers to materials with a higher nitrogen content than oxygen content.

[0179] The insulator 322 provides a step created by the transistor 300 and the like located below it. It may also function as a planarizing film that flattens the surface. For example, the upper surface of the insulator 322 is To improve flatness, the surface is flattened using a planarization treatment such as chemical mechanical polishing (CMP). It's fine if you do that.

[0180] Furthermore, the insulator 324 receives the transistor from the substrate 311 or the transistor 300, etc. A barrier film is used in the region where the TA500 is provided to prevent the diffusion of hydrogen and impurities. It is preferable that they be present.

[0181] As an example of a film that has barrier properties against hydrogen, for example, silica nitride formed by CVD A semiconductor can be used. Here, a semiconductor having an oxide semiconductor such as transistor 500 can be used. The diffusion of hydrogen into the semiconductor element may degrade the characteristics of that semiconductor element. So, a film that suppresses hydrogen diffusion is placed between transistor 500 and transistor 300. It is preferable to use it. Specifically, a membrane that suppresses hydrogen diffusion is one in which the amount of hydrogen desorption is small. It will be called a membrane.

[0182] The amount of hydrogen desorption can be analyzed, for example, using a thermodynamic desorption gas analysis (TDS) method. Yes, it is possible. For example, the amount of hydrogen desorption from insulator 324 can be determined by TDS analysis when the film surface temperature is In the range of 50°C to 500°C, the amount of desorption converted to hydrogen atoms is the area of ​​the insulator 324. Converted to a single win, 10 x 10 15 atoms / cm 2 The following is preferably 5 × 10 15 a toms / cm 2 The following is acceptable.

[0183] Furthermore, it is preferable that the dielectric constant of the insulator 326 is lower than that of the insulator 324. For example, The relative permittivity of the edge material 326 is preferably less than 4, and more preferably less than 3. Also, for example, an insulator... The relative permittivity of 326 is preferably 0.7 times or less, and preferably 0.6 times or less, than the relative permittivity of the insulator 324. This is more preferable. By using a material with a low dielectric constant as the interlayer film, the parasitic capacitance that occurs between the wiring is reduced. It can be reduced.

[0184] Furthermore, insulators 320, 322, 324, and 326 contain capacitive elements 6 A conductor 328 and a conductor 330, etc., which are connected to transistor 500, are embedded. In the example shown in Figure 11, the insulators 320 and 322 are embedded. The conductor 328 is provided so as to be embedded in the insulators 324 and 326. A conductor 330 is provided. Note that the conductors 328 and 330 are plugs or wiring It has the function of a plug or wiring. Furthermore, a conductor that has the function of a plug or wiring has multiple components In some cases, the same symbol may be assigned to multiple components. Also, in this specification, wiring and distribution are used interchangeably. The plug that connects to the wire may be a single unit. That is, a part of the conductor may function as wiring. In some cases, it may function as a plug, and in other cases, a portion of the conductor may function as a plug.

[0185] Here, semiconductor elements plug into each other, or into semiconductor elements and conductors, or into conductors. Alternatively, if connected via wiring, they may be connected electrically, for example.

[0186] The materials for each plug and wiring (conductor 328, conductor 330, etc.) are metal materials, composite materials, etc. Conductive materials such as gold, metal nitride, or metal oxide are used in a single layer or in a laminated form. It is possible to have both heat resistance and conductivity with high melting point materials such as tungsten and molybdenum. It is preferable to use a material, and it is preferable to use tungsten. Alternatively, aluminum. It is preferable to form it with a low-resistance conductive material such as copper. This can reduce wiring resistance.

[0187] In the semiconductor device shown in Figure 11, the conductor 328b is a diffusion layer 314a, and the diffusion layer 31 It is placed on top of 4b, etc. Also, the insulator 315 is sandwiched between the diffusion layer 314a and the conductor 328b. It may have a region that is exposed to light, and a region sandwiched between the diffusion layer 314b and the conductor 328b. The conductor 328 is provided on top of the conductor 328b. The conductor 328b is provided on top of the diffusion layer 314a and The region sandwiched between the conductor 328, or the region sandwiched between the diffusion layer 314b and the conductor 328 They may have it.

[0188] Furthermore, as shown in Figure 12, a portion of region 319 is provided to be formed to a greater depth. That's good too.

[0189] Furthermore, Figures 11 and 12 show that transistor 300 has a planar structure. - An example of a MOSFET is shown, but in Figure 13, transistor 300 has a trench-type structure. An example of a D-MOSFET is shown. In Figure 13, the conductor 316, which functions as the gate, , formed in a trench provided between diffusion layer 314a and diffusion layer 314b. Diffusion layer 3 An insulating material that functions as a gate insulator is present between 14a and the diffusion layer 314b and the conductor 316. Body 315 is formed.

[0190] Compared to a planar structure, the area of ​​an integrated circuit in a trench structure is less than 0.5 times smaller. It is preferable that the size be reduced to a certain extent, and more preferably to 0.4 times or less.

[0191] A wiring layer may be provided on the insulator 326 and the conductor 330. For example, as shown in Figure 11. Insulators 350, 352, and 354 are arranged in a sequential stack. Furthermore, a conductor 356 is formed on insulators 350, 352, and 354. The conductor 356 functions as a plug or wiring to connect to the transistor 300. The conductor 356 is provided using the same material as the conductors 328 and 330. It is possible.

[0192] Furthermore, for example, insulator 350 has a barrier property against hydrogen, similar to insulator 324. It is preferable to use an insulator. Furthermore, the conductor 356 has barrier properties against hydrogen. It is preferable to include a conductor. In particular, it is preferable to include an insulator 350 that has barrier properties against hydrogen. A conductor having a barrier property against hydrogen is formed in the opening. With this configuration, The transistor 300 and the transistor 500 can be separated by a barrier layer. This can suppress the diffusion of hydrogen from transistor 300 to transistor 500.

[0193] For example, tantalum nitride can be used as a conductor that has barrier properties against hydrogen. It would be good to do so. Also, by laminating tantalum nitride and highly conductive tungsten, the wiring can be made It is possible to suppress the diffusion of hydrogen from transistor 300 while maintaining conductivity. In this case, the tantalum nitride layer having barrier properties against hydrogen has barrier properties against hydrogen It is preferable that the structure is in contact with an insulator 350 having the following properties.

[0194] In the above, a wiring layer including the conductive 356 was described, but the semicircular Conductor devices are not limited to this. Multiple wiring layers similar to the wiring layer containing conductor 356 are used. Multiple layers may be formed.

[0195] Insulator 354 has insulators 510, 512, 514, and 516. They are arranged in a stack in order. Insulator 510, insulator 512, insulator 514, and insulation It is preferable that one of the components 516 is a material that has barrier properties against oxygen and hydrogen. .

[0196] For example, the insulator 510 and the insulator 514 have a substrate 311 or a transistor 300. From the area where the transistor 500 is installed, hydrogen and impurities do not diffuse to the area where the transistor 500 is installed. It is preferable to use a film having such barrier properties. Therefore, similar to insulator 324 Materials can be used.

[0197] As an example of a film with hydrogen barrier properties, silicon nitride formed by CVD is used. It is possible to have a semiconductor device having an oxide semiconductor such as transistor 500. Furthermore, hydrogen diffusion can degrade the properties of the semiconductor device. Therefore, A film that suppresses hydrogen diffusion is used between the transistor 500 and the transistor 300. This is preferable. Specifically, a membrane that suppresses hydrogen diffusion is a membrane that has a low rate of hydrogen desorption. ru.

[0198] Furthermore, as films having barrier properties against hydrogen, for example, insulator 510 and insulator 5 14 uses metal oxides such as aluminum oxide, hafnium oxide, and tantalum oxide. It is preferable.

[0199] In particular, aluminum oxide is a source of oxygen and hydrogen, which can cause variations in the electrical properties of transistors. It has a high barrier effect that prevents both water and other impurities from passing through the film. Aluminum oxide is susceptible to hydrogen, moisture, and other impurities during and after the transistor manufacturing process. This prevents contamination of the transistor 500 with pure material. This can suppress the release of oxygen from the oxides that make up the transistor 5. It is suitable for use as a protective film for 00.

[0200] Furthermore, for example, the same material as the insulator 320 is used for insulators 512 and 516. It is possible to do so by applying materials with relatively low dielectric constants to these insulators. This can reduce parasitic capacitance between wirings. For example, insulator 512 and insulator For 516, silicon oxide films or silicon oxide nitride films can be used.

[0201] Furthermore, insulators 510, 512, 514, and 516 contain a conductive material 5 18, and a conductor (for example, conductor 503) that constitutes the transistor 500 is embedded. It is included. Furthermore, conductor 518 is conductor 610b, transistor 300, or capacitance element. It functions as a plug or wiring to connect to child 600. Conductor 518 is conductor 3 28 and the conductor 330 can be provided using the same material.

[0202] In particular, the conductor 518 in the region in contact with the insulator 510 and the insulator 514 is oxygen, hydrogen, And preferably it is a conductor that has barrier properties against water. With this configuration, The ZISTA 300 and Transistor 500 have barrier properties against oxygen, hydrogen, and water. The layers can be separated, and hydrogen can be diffused from transistor 300 to transistor 500. It can be suppressed.

[0203] A transistor 500 is provided above the insulator 516.

[0204] As shown in Figures 14A and 14B, the transistor 500 is insulator 514 and insulator 5 A conductor 503 is arranged to be embedded in 16, and the insulator 516 and the conductor 503 An insulator 520 placed on top, an insulator 522 placed on top of the insulator 520, and an insulator An insulator 524 placed on top of 522, and an oxide 530a placed on top of the insulator 524. And, oxide 530b is placed on oxide 530a, and on oxide 530b, separated from each other Conductors 542a and 542b are arranged in such a manner, and conductors 542a and 542b An insulator positioned on top, superimposed between the conductor 542a and the conductor 542b, with an opening formed therein. 580, oxide 530c arranged on the bottom and sides of the opening, and the forming surface of oxide 530c The insulator 550 is arranged on the surface of the insulator 550, and the conductor 560 is arranged on the surface of the insulator 550. do.

[0205] Furthermore, as shown in Figures 14A and 14B, oxide 530a, oxide 530b, and conductor 5 The insulator 544 is placed between 42a and the conductor 542b and the insulator 580. Preferred. Also, as shown in Figures 14A and 14B, the conductor 560 is within the insulator 550. A conductor 560a is provided on the side, and is provided so as to be embedded inside the conductor 560a. It is preferable to have a conductive material 560b. Also, as shown in Figures 14A and 14B The insulator 580, the conductor 560, and the insulator 550 are arranged on top of each other. It is preferable.

[0206] In the following, oxides 530a, 530b, and 530c are summarized. It is sometimes referred to as oxide 530.

[0207] Furthermore, in transistor 500, in the region where the channel is formed and in its vicinity, acid The following describes a configuration in which three layers of oxide 530a, oxide 530b, and oxide 530c are laminated. However, the present invention is not limited thereto. For example, a single layer of oxide 530b, oxidation Two-layer structure of substance 530b and oxide 530a, two-layer structure of oxide 530b and oxide 530c, Alternatively, a configuration with a stacked structure of four or more layers may be used. In addition, in transistor 500, Although the electric body 560 is shown as a two-layer laminated structure, the present invention is not limited thereto. For example, the conductor 560 may have a single-layer structure or a multilayer structure of three or more layers. Good. Also, the transistor 500 shown in Figures 11 and 14A is just one example, and its structure is not limited to that. It is not necessary to use a specific transistor; instead, an appropriate transistor should be used depending on the circuit configuration and driving method.

[0208] Here, the conductor 560 functions as the gate electrode of the transistor, and the conductor 542a and The conductor 542b functions as either a source electrode or a drain electrode, respectively. Furthermore, the conductor 560 is sandwiched between the opening of the insulator 580 and the conductors 542a and 542b. It is formed to be embedded in the region. Conductor 560, Conductor 542a and Conductor 5 The placement of 42b is self-aligned with the opening of the insulator 580. In the inverter 500, the gate electrode is positioned between the source electrode and the drain electrode in a self-aligned manner. It can be positioned in this way. Therefore, the conductor 560 can be positioned with a margin. Since it can be formed without any issues, the occupied area of ​​transistor 500 can be reduced. This makes it possible to miniaturize and highly integrate semiconductor devices.

[0209] Furthermore, the conductor 560 is self-aligned in the region between conductor 542a and conductor 542b. As a result, the conductor 560 has a region that overlaps with the conductor 542a or the conductor 542b. It does not have. As a result, between the conductor 560 and the conductors 542a and 542b The parasitic capacitance can be reduced. Therefore, the switching speed of transistor 500 This improves the degree of performance and allows for high frequency characteristics.

[0210] The conductor 560 may function as the first gate (also called the top gate) electrode. Furthermore, the conductor 503 functions as a second gate (also called a bottom gate) electrode. There are cases where this is the case. In that case, the potential applied to conductor 503 is the same as the potential applied to conductor 560. By changing them independently and without linking them, the threshold voltage of transistor 500 is controlled. This can be achieved by applying a negative potential to the conductor 503, which allows the transistor 5 It becomes possible to increase the threshold voltage of 00 to greater than 0V and reduce the off-current. However, Therefore, applying a negative potential to conductor 503 is better than not applying a negative potential to conductor 560 The drain current can be reduced when the applied potential is 0V.

[0211] The conductor 503 is arranged so as to overlap with the oxide 530 and the conductor 560. Therefore, when a potential is applied to the conductor 560 and the conductor 503, the conductor 560 generates The electric field and the electric field generated from the conductor 503 connect, and channels are formed in the oxide 530. It can cover the gel-forming region. In this specification, the first gate electrode and the second gate The electric field of the electrode electrically surrounds the channel formation region, creating a transistor structure. This is called a surrounded channel (S-channel) structure.

[0212] Furthermore, the conductor 503 has the same configuration as the conductor 518, and the insulators 514 and 5 A conductor 503a is formed in contact with the inner wall of the 16 openings, and a conductor 503b is formed further inside. This has been done. In addition, in transistor 500, conductors 503a and 503b are combined. Although the present invention describes a layered configuration, it is not limited thereto. For example, conductive Body 503 may be provided as a single layer or as a laminated structure of three or more layers.

[0213] Here, the conductor 503a diffuses impurities such as hydrogen atoms, hydrogen molecules, water molecules, and copper atoms. It is preferable to use a conductive material that has the function of suppressing (the above-mentioned impurities are less likely to permeate) It is difficult. Or, it inhibits the diffusion of oxygen (for example, at least one such as an oxygen atom or oxygen molecule). It is preferable to use a conductive material that has a functional property (i.e., one that is impermeable to the above-mentioned oxygen). In this specification, the function of suppressing the diffusion of impurities or oxygen means the above impurities or the above The function is to suppress the diffusion of one or all of the oxygen molecules.

[0214] For example, the conductor 503a has the function of suppressing the diffusion of oxygen, This can suppress the oxidation of b, which reduces its conductivity.

[0215] Furthermore, if the conductor 503 also functions as wiring, the conductor 503b may be tungsten or copper. Alternatively, it is preferable to use a highly conductive material, mainly composed of aluminum. In that case, the conductor 503a does not necessarily have to be provided. As shown in the diagram, a laminated structure is also possible, for example, titanium or titanium nitride and the above conductive material. It may also be used as a laminate with other materials.

[0216] Insulators 520, 522, and 524 function as second gate insulating films. It holds.

[0217] Here, the insulator 524 in contact with the oxide 530 is more abundant than the oxygen that satisfies the stoichiometric composition. It is preferable to use an insulator containing oxygen. That is, it is preferable that an excess oxygen region is formed in the insulator 524. By providing such an insulator containing excess oxygen in contact with the oxide 530, oxygen deficiency in the oxide 530 can be reduced, and the reliability of the transistor 500 can be improved. Specifically, as the insulator having an excess oxygen region, it is preferable to use an oxide material in which some oxygen is desorbed by heating. The oxide that desorbs oxygen by heating is an oxide film in which the desorption amount of oxygen in terms of oxygen atoms is 1.0×10 atoms / cm or more, preferably 1.0×10

[0218] atoms / cm or more, more preferably 2.0×10 atoms / cm or more, or 3.0×10 18 atoms / cm 3 or more, according to TDS (Thermal Desorption Spectroscopy) analysis. Note that the surface temperature of the film during the above TDS analysis is preferably in the range of 100°C or higher and 700°C or lower, or 100 ×10 19 atoms / cm 3 or more, more preferably 2.0×1×10 19 atoms / c m 3 or more, or 3.0×10 20 atoms / cm 3 or more. Moreover, when the insulator 524 has an excess oxygen region, it is preferable that the insulator 522 has a function of suppressing the diffusion of oxygen (for example, oxygen atoms, oxygen molecules, etc.). By having the insulator 522 have a function of suppressing the diffusion of oxygen and impurities, the oxygen possessed by the oxide 530 does not diffuse to the insulator 520 side, which is preferable. Also, it is preferable that the conductor 503

[0219] [[ID=4?]] また、絶縁体524が、過剰酸素領域を有する場合、絶縁体522は、酸素(例えば、 酸素原子、酸素分子など)の拡散を抑制する機能を有する(上記酸素が透過しにくい)こ とが好ましい。

[0220] 絶縁体522が、酸素や不純物の拡散を抑制する機能を有することで、酸化物530が 有する酸素は、絶縁体520側へ拡散することがなく、好ましい。また、導電体503が This suppresses the reaction between the insulator 524 and the oxygen present in the oxide 530.

[0221] The insulator 522 is, for example, aluminum oxide, hafnium oxide, aluminum and haf Oxides containing nium (hafnium aluminate), tantalum oxide, zirconium oxide, Lead zirconate tane (PZT), strontium titanate (SrTiO3), or (Ba Insulators containing so-called high-k materials such as Sr)TiO3(BST) are used in single layers or multi-layered insulators. It is preferable to use it in layers. As transistors become smaller and more integrated, gate insulation Thinning the film can sometimes lead to problems such as leakage current. By using a high-k material as the insulator, the physical film thickness is maintained while the transistor movement This allows for a reduction in the gate potential during operation.

[0222] In particular, it has the function of suppressing the diffusion of impurities and oxygen (the above oxygen is less permeable). Using an insulator containing an oxide of either aluminum or hafnium, or both, which are insulating materials. It would be good to have one. As an insulator containing an oxide of aluminum, hafnium, or both, acid Aluminum oxide, hafnium oxide, aluminum and hafnium oxide (hafnium It is preferable to use materials such as aluminum oxide. When formed, the insulator 522 prevents the release of oxygen from the oxide 530 and the transistor 500 It functions as a layer that suppresses the incorporation of impurities such as hydrogen from the peripheral area into the oxide 530.

[0223] Alternatively, these insulators may contain, for example, aluminum oxide, bismuth oxide, or germanium oxide. M, niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, acid Zirconium oxide may be added. Alternatively, these insulators may be nitrided. Silicon oxide, silicon oxide nitride, or silicon nitride may be laminated onto the edge body.

[0224] Furthermore, it is preferable that the insulator 520 is thermally stable. For example, silicon oxide and Silicon oxide nitride is suitable because it is thermally stable. Also, high-k material By combining the insulator with silicon oxide or silicon oxide nitride, thermal stability and A laminated insulator 520 with a high dielectric constant can be obtained.

[0225] Note that in transistor 500 in Figures 14A and 14B, the second is a three-layer stacked structure. Insulators 520, 522, and 524 are shown as gate insulating films. However, the second gate insulating film may have a single layer, two layers, or a stacked structure of four or more layers. In that case, it is not limited to a laminated structure made of the same material, but can also be a laminated structure made of different materials. stomach.

[0226] Transistor 500 is an oxide semiconductor in oxide 530 including a channel formation region. It is preferable to use a functional metal oxide. For example, as oxide 530, In-M- Zn oxide (element M is aluminum, gallium, yttrium, copper, vanadium, beryllium) Rium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, ra Tantum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium It is preferable to use one or more metal oxides selected from among the following.

[0227] Specifically, for oxide 530a, In:Ga:Zn = 1:3:4 [atomic ratio], Alternatively, a metal oxide in an atomic ratio of 1:1:0.5 may be used. Also, oxide 530b and Then, gold in an atomic ratio of In:Ga:Zn = 4:2:3 or 1:1:1. A group oxide can be used. Also, for oxide 530c, In:Ga:Zn = 1:3:4 [Atomic ratio], Ga:Zn=2:1 [Atomic ratio], or Ga:Zn=2:5 [Atomic ratio] You can use the metal oxide of ]. Also, a specific example of when oxide 530c is used in a layered structure and For example, In:Ga:Zn=4:2:3 [atomic ratio] and In:Ga:Zn=1:3:4 Layered structures with [atomic ratio] Ga:Zn=2:1 [atomic ratio] and In:Ga:Zn=4 Stacked structure with :2:3 [atomic ratio], Ga:Zn=2:5 [atomic ratio], and In:Ga: Layered structure of Zn=4:2:3 [atomic ratio], gallium oxide, and In:Ga:Zn=4: Examples include layered structures with an atomic ratio of 2:3.

[0228] Furthermore, oxide 530b may be crystalline. For example, CAAC-O (described later) S(c-axis aligned crystalline oxide semic It is preferable to use an onductor. The material has few impurities or defects (such as oxygen deficiencies), is highly crystalline, and has a dense structure. Therefore, oxygen is extracted from oxide 530b by the source electrode or drain electrode. This can be suppressed. Also, even if heat treatment is performed, oxygen is drawn from oxide 530b. Because the risk of extraction is reduced, the transistor 500 is designed to withstand high temperatures during the manufacturing process ( It is stable against the so-called thermal budget.

[0229] In oxide 530, the metal oxide that functions as a channel-forming region is band gap It is preferable to use a voltage of 2 eV or higher, preferably 2.5 eV or higher. By using metal oxides with a large band gap, the off-current of the transistor can be reduced. It is possible.

[0230] Oxide 530 has oxide 530a beneath oxide 530b, so oxide 530a The diffusion of impurities from structures formed below to oxide 530b can be suppressed. Yes, it is possible. Also, by having oxide 530c on oxide 530b, oxide 530c is more Furthermore, the diffusion of impurities from the structure formed above to the oxide 530b can be suppressed. ru.

[0231] Furthermore, oxide 530 has a layered structure of multiple oxide layers with different atomic ratios of each metal atom. It is preferable to do so. Specifically, in the metal oxide used in oxide 530a, the constituent elements The atomic ratio of element M in the elementary oxide is the ratio of constituent elements in the metal oxide used in oxide 530b. It is preferable that it is greater than the atomic ratio of element M. Also, the metal oxide used in oxide 530a In the material, the atomic ratio of element M to In is the same as that of the metal oxide used in oxide 530b. It is preferable that the atomic ratio of element M to In is greater than that of In. Also, oxide 530b In the metal oxide used, the atomic ratio of In to element M is used in oxide 530a. It is preferable that the atomic ratio of In to element M in the metal oxide is greater than that of In. Oxide 530c is a metal oxide that can be used in oxide 530a or oxide 530b. The object can be used.

[0232] Furthermore, the energy at the lower end of the conduction band of oxide 530a and oxide 530c is It is preferable that the energy of b is higher than the energy of the lower end of the conduction band. In other words, oxide The electron affinity of oxide 530a and oxide 530c is smaller than the electron affinity of oxide 530b. This is preferable.

[0233] Here, at the joint of oxide 530a, oxide 530b, and oxide 530c, The energy levels at the lower end of the guide band change smoothly. In other words, oxide 530a, oxide The energy levels at the lower end of the conduction band at the junction of 530b and oxide 530c are continuous. It can also be said that it changes or becomes a continuous bond. In order to do this, oxide 530 At the interface between a and oxide 530b, and at the interface between oxide 530b and oxide 530c, the shape It is desirable to lower the defect level density of the resulting mixed layer.

[0234] Specifically, oxide 530a and oxide 530b, and oxide 530b and oxide 530c, By having a common element other than oxygen (as the main component), a mixed layer with a low defect level density is formed. It can be done. For example, if oxide 530b is In-Ga-Zn oxide, 530a and oxide 530c are In-Ga-Zn oxide, Ga-Zn oxide, and oxide Gallium or similar materials would be suitable.

[0235] In this case, the main carrier pathway is oxide 530b. Oxide 530a, oxide 5 By configuring 30c as described above, the interface between oxide 530a and oxide 530b, and oxidation The defect level density at the interface between material 530b and oxide 530c can be reduced. Therefore, the influence of interfacial scattering on carrier conduction is reduced, and transistor 500 has high On-current can be obtained.

[0236] On the oxide 530b, there is a conductor 542a that functions as a source electrode and a drain electrode. , and a conductor 542b are provided. The conductors 542a and 542b are, Aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tar ngsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium Choose from beryllium, indium, ruthenium, iridium, strontium, and lanthanum. The identified metal element, or an alloy containing the above-mentioned metal element, or a combination of the above-mentioned metal elements It is preferable to use a blended alloy, such as tantalum nitride, titanium nitride, or tungsten. Titanium nitrides containing titanium and aluminum, tantalum nitrides containing tantalum and aluminum, oxides Thenium, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum and nickel It is preferable to use oxides containing Kel. Also, tantalum nitride, titanium nitride, titan Nitrides containing aluminum, nitrides containing tantalum and aluminum, ruthenium oxide , ruthenium nitride, oxides containing strontium and ruthenium, lanthanum and nickel Oxides are conductive materials that are resistant to oxidation, or materials that maintain their conductivity even when absorbing oxygen. Therefore, it is preferable. Furthermore, metal nitride films such as tantalum nitride are suitable for hydrogen or oxygen. It is preferable because it has barrier properties.

[0237] Furthermore, in Figure 14A, the conductors 542a and 542b are shown as single-layer structures. A laminated structure of two or more layers may be used. For example, a tantalum nitride film and a tungsten film may be laminated. It is good to do so. Alternatively, a titanium film and an aluminum film may be laminated. Also, on a tungsten film A two-layer structure with an aluminum film laminated on top, and a copper film on top of a copper-magnesium-aluminum alloy film. A two-layer structure in which a copper film is laminated on a titanium film, a two-layer structure in which a copper film is laminated on a tungsten film A stacked two-layer structure is also possible.

[0238] Furthermore, a titanium film or titanium nitride film, and aluminum layered on top of the titanium film or titanium nitride film. A three-layer structure consisting of a laminated titanium film or copper film, with a titanium film or titanium nitride film formed on top of it. A molybdenum film or molybdenum nitride film, and on the molybdenum film or molybdenum nitride film An aluminum film or copper film is laminated on top of it, and then a molybdenum film or molybdenum nitride film is placed on top of that. There are three-layer structures that form a film. Furthermore, there are permeable films containing indium oxide, tin oxide, or zinc oxide. A brightly conductive material may be used.

[0239] Furthermore, as shown in Figure 14A, the oxide 530 has conductor 542a (conductor 542b) and Regions 543a and 543b are formed at and near the interface as low-resistance regions. In some cases, region 543a functions as either the source region or the drain region. Furthermore, region 543b functions as either the source region or the drain region. Also, region 54 A channel-forming region is formed in the area sandwiched between region 3a and region 543b.

[0240] By providing the conductor 542a (conductor 542b) in contact with the oxide 530, The oxygen concentration in region 543a (region 543b) may decrease. Also, region 543a ( In region 543b), the metal contained in conductor 542a (conductor 542b) and oxide 530 A metal compound layer containing the component may be formed. In such cases, region 543a (region The carrier density in region 543b increases, and region 543a (region 543b) becomes a low-resistance region. Yes.

[0241] The insulator 544 is provided so as to cover the conductors 542a and 542b, and the conductor The oxidation of 542a and conductor 542b is suppressed. At this time, the insulator 544 is oxide 5 It may be provided to cover the side of 30 and to be in contact with the insulator 524.

[0242] Insulator 544 includes hafnium, aluminum, gallium, yttrium, and zirconium. Umium, tungsten, titanium, tantalum, nickel, germanium, neodymium, lanthanum Alternatively, a metal oxide containing one or more metals selected from magnesium, etc., can be used. This is possible. Furthermore, silicon nitride or silicon nitride can also be used as the insulator 544. It is possible to be there.

[0243] In particular, as the insulator 544, an oxide of either aluminum or hafnium, or both. The insulators include aluminum oxide, hafnium oxide, aluminum, and hafnium. It is preferable to use an oxide containing (hafnium aluminate), etc. In particular, hafnium Mualuminate has higher heat resistance than hafnium oxide film. Therefore, heat in subsequent processes In processing, it is preferable because it is less likely to crystallize. Note that conductor 542a and conductor 542 If b is an oxidation-resistant material, or if its conductivity does not significantly decrease even when it absorbs oxygen, then The 544 element is not a mandatory component. It can be designed appropriately depending on the desired transistor characteristics. stomach.

[0244] The presence of the insulator 544 allows water and other impurities such as hydrogen contained in the insulator 580 to be acidic. The diffusion of oxide 530c to oxide 530b via insulator 550 is suppressed. Yes, it is possible. Furthermore, the excess oxygen in the insulator 580 suppresses the oxidation of the conductor 560. It is possible.

[0245] The insulator 550 functions as the first gate insulating film. The insulator 550 is made of oxide 530 It is preferable to place it in contact with the inside (top surface and side surface) of c. The insulator 550 is as described above. Similar to insulator 524, an insulator that contains an excess of oxygen and releases oxygen upon heating It is preferable to use this method to form the product.

[0246] Specifically, silicon oxide, silicon oxide nitride, silicon nitride oxide, silicon oxide containing excess oxygen silicon nitride, silicon oxide with added fluorine, silicon oxide with added carbon, carbon, and Silicon oxide with added nitrogen and silicon oxide with voids can be used. Silicon oxide and silicon oxide-nitride are preferred because they are stable to heat.

[0247] An insulator that releases oxygen upon heating is designated as insulator 550, and the oxide 530c is placed on its upper surface. By being installed in contact with each other, the oxide 530b is transmitted from the insulator 550 through the oxide 530c. This allows for effective oxygen supply to the channel formation region. Furthermore, the same applies to the insulator 524. Therefore, it is preferable that the concentration of impurities such as water or hydrogen in the insulator 550 is reduced. The film thickness of the insulator 550 is preferably between 1 nm and 20 nm.

[0248] Furthermore, in order to efficiently supply excess oxygen from the insulator 550 to the oxide 530, A metal oxide may be provided between the edge 550 and the conductor 560. The metal oxide is an insulating material. It is preferable to suppress oxygen diffusion from body 550 to conductor 560. By providing a metal oxide, the diffusion of excess oxygen from the insulator 550 to the conductor 560 is suppressed. This means that the decrease in the amount of excess oxygen supplied to oxide 530 can be suppressed. Furthermore, oxidation of the conductor 560 due to excess oxygen can be suppressed. For the insulator 544, any material suitable for use in the insulator 544 may be used.

[0249] Furthermore, the insulator 550 may have a multilayer structure, similar to the second gate insulating film. As DISTRAs become smaller and more highly integrated, the gate insulating film becomes thinner, leading to leakage current and other issues. Because problems may occur, the insulator that functions as the gate insulating film is made of high-k material. By creating a laminated structure of a material and a thermally stable material, the physical film thickness is maintained while preventing traction. This allows for a reduction in gate potential during inverter operation. Furthermore, it offers thermal stability and a high dielectric constant. It can be made into a layered structure.

[0250] The conductor 560, which functions as the first gate electrode, has a two-layer structure in Figures 14A and 14B. As shown, it may be a single-layer structure or a laminated structure of three or more layers.

[0251] Conductor 560a contains hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxide molecules. Conductive material (such as N2O, NO, NO2, etc.) has the function of suppressing the diffusion of impurities such as copper atoms. It is preferable to use a material that contains oxygen (for example, oxygen atoms, oxygen molecules, etc.). It is preferable to use a conductive material that has the function of suppressing the diffusion of (1). Conductor 56 Because 0a has the function of suppressing oxygen diffusion, the oxygen contained in the insulator 550 This can suppress the oxidation of the conductor 560b and the resulting decrease in conductivity. Oxygen diffusion Examples of conductive materials that have the function of suppressing this include tantalum, tantalum nitride, and ruthenium. It is preferable to use um or ruthenium oxide. Also, as the conductor 560a, An oxide semiconductor applicable to oxide 530 can be used. In that case, conductor 560 By depositing b using the sputtering method, the electrical resistance of the conductor 560a is reduced, thus improving conductivity. It can be incorporated into the body. This is called an OC (Oxide Conductor) electrode. It is possible.

[0252] Furthermore, the conductive material 560b is a conductive material whose main components are tungsten, copper, or aluminum. It is preferable to use the material. Also, since the conductor 560b also functions as wiring, It is preferable to use a highly conductive material. For example, tungsten, copper, or aluminum. A conductive material mainly composed of um can be used. In addition, the conductor 560b has a laminated structure. This may also be done, for example, as a laminated structure of titanium or titanium nitride and the above conductive material. stomach.

[0253] The insulator 580 is provided on the conductors 542a and 542b via the insulator 544. It is possible. The insulator 580 preferably has an excess oxygen region. For example, insulator 58 As 0, silicon oxide, silicon oxide nitride, silicon oxide nitride, silicon nitride, fluorine silicon oxide with added carbon, silicon oxide with added carbon, and silicon oxide with added nitrogen. It is preferable that the material contains silicon, porous silicon oxide, or resin. In particular, acid Silicon oxide and silicon oxide-nitride are preferred because they are thermally stable. In particular, silicon oxide Silicon oxide with voids can easily form excess oxygen regions in subsequent processes. This is preferable because it allows for this.

[0254] The insulator 580 preferably has an excess oxygen region. Oxygen is released upon heating. By placing the insulator 580 in contact with the oxide 530c, the oxygen in the insulator 580 is oxidized. It can be efficiently supplied to the oxide 530 through material 530c. It is preferable that the concentration of impurities such as water or hydrogen in 80 is reduced.

[0255] The opening in the insulator 580 is formed superimposed on the region between the conductor 542a and the conductor 542b. This allows the conductor 560 to pass through the opening of the insulator 580, and the conductor 542a and the conductor. It is formed in a way that it is embedded in the region sandwiched between 542b.

[0256] When miniaturizing semiconductor devices, it is necessary to shorten the gate length, but the conductor 5 It is necessary to prevent the conductivity of 60 from decreasing. To that end, the film thickness of conductor 560 is increased. As a result, the conductor 560 can have a shape with a high aspect ratio. In this embodiment, In order to embed the body 560 into the opening of the insulator 580, the conductor 560 is aspect ratio Even when forming a shape with a high ratio, it is possible to form the conductive material 560 without causing it to collapse during the process. Cut.

[0257] The insulator 574 is located on the upper surface of the insulator 580, the upper surface of the conductor 560, and the upper surface of the insulator 550. It is preferable that it be provided in contact with the insulator 574. This allows for the creation of excess oxygen regions in the insulator 550 and the insulator 580. Oxygen can be supplied to the oxide 530 from the excess oxygen region.

[0258] For example, as insulator 574, hafnium, aluminum, gallium, yttrium, Zirconium, tungsten, titanium, tantalum, nickel, germanium, or magnesium Metal oxides containing one or more metals selected from elements such as cilium can be used. .

[0259] In particular, aluminum oxide has high barrier properties and is suitable for thin films of 0.5 nm to 3.0 nm. However, the diffusion of hydrogen and nitrogen can be suppressed. Therefore, the sputtering method The aluminum oxide film formed using this method serves as both an oxygen source and a barrier against impurities such as hydrogen. It can also function as a membrane.

[0260] Furthermore, it is preferable to provide an insulator 581 that functions as an interlayer film on top of the insulator 574. i. Insulator 581, like insulator 524, has an impurity concentration of water or hydrogen in the film. It is preferable that it be reduced.

[0261] Furthermore, openings formed in insulators 581, 574, 580, and 544 Conductors 540a and 540b are placed in the opening. 0b is provided opposite the conductor 560. Conductors 540a and 540b are, The configuration is the same as that of conductors 546 and 548, which will be described later.

[0262] An insulator 582 is provided on the insulator 581. The insulator 582 is designed to absorb oxygen and hydrogen. In contrast, it is preferable to use a barrier material. Therefore, the insulator 582 is an insulating material. The same material as the edge 514 can be used. For example, aluminum oxide can be used for the insulator 582. It is preferable to use metal oxides such as nium, hafnium oxide, and tantalum oxide.

[0263] In particular, aluminum oxide is a source of oxygen and hydrogen, which can cause variations in the electrical properties of transistors. It has a high barrier effect that prevents both water and other impurities from passing through the film. Aluminum oxide is susceptible to hydrogen, moisture, and other impurities during and after the transistor manufacturing process. This prevents contamination of the transistor 500 with pure material. This can suppress the release of oxygen from the oxides that make up the transistor 5. It is suitable for use as a protective film for 00.

[0264] Also, insulator 520, insulator 522, insulator 524, insulator 544, insulator 580, The edge 574, insulator 581, and insulator 582 contain conductors 546 and 548, etc. It is embedded. Conductors 546 and 548 are, for example, connected to conductor 610b. It functions as a plug or wiring to connect to the Rangista 300.

[0265] Insulators 580, 574, 581, and 582 contain conductor 546b , and conductor 548b, etc. are embedded. Conductors 546b and conductor 548b are Plugs or wiring for connecting to the conductors 542a, 542b, etc. of the transistor 500 It has the function of being functional.

[0266] Conductors 546, 546b, 548, and 548b are conductors 328, It can also be provided using the same material as the conductor 330.

[0267] Next, a conductor 610b is provided above the transistor 500. An example is shown in Figure 1. In this case, the conductor 610b is provided on the insulator 582. In the example shown in Figure 1, Conductor 610b is connected to transistor 500 via conductor 548b.

[0268] Furthermore, in addition to the conductor 610b, a conductor 610a may be provided on the insulator 582. The conductive body 610a can, for example, be formed by processing from the same conductive film as the conductive body 610b. An insulator 630 is provided on the conductor 610a and the conductor 610b, and furthermore, the conductor 610 By providing the conductor 620 via the insulator 630 so as to overlap with a, the insulator 58 On 2, a capacitive element composed of a conductor 610a, a conductor 620, and an insulator 630. It is possible to set it to 600.

[0269] Conductors 610a and 610b contain molybdenum, titanium, tantalum, and tungsten. Metals containing elements selected from tene, aluminum, copper, chromium, neodymium, and scandium. A film, or a metal nitride film containing the above-mentioned elements (tantalum nitride film, titanium nitride film, nitride film) Molybdenum film, tungsten nitride film, etc. can be used. Alternatively, indium tin oxide Indium oxide containing tungsten oxide, indium zinc containing tungsten oxide Oxides, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, Conductive materials such as indium zinc oxide and indium tin oxide with added silicon oxide are applied. It is also possible.

[0270] In Figure 11, the conductors 610a and 610b are shown as single-layer structures, but this configuration is not limited to this. It is not specified, and may be a laminated structure of two or more layers. For example, a conductor with barrier properties and a highly conductive material A conductor with barrier properties and a conductor with high conductivity have good adhesion to each other. A highly conductive material may be formed.

[0271] The conductor 620 uses a conductive material such as a metal material, an alloy material, or a metal oxide material. This is possible. High-melting-point materials such as tungsten and molybdenum that offer both heat resistance and conductivity. It is preferable to use a conductive material, and it is particularly preferable to use tungsten. When forming it simultaneously with other structures, low-resistance metallic materials such as Cu (copper) or Al (aluminium) are used. You can use (Mu), etc.

[0272] An insulator 640 is provided on the conductor 620 and the insulator 630. 0 can be provided using the same material as insulator 320. Also, insulator 640 is It may also function as a flattening film that covers the uneven surface below it.

[0273] In the semiconductor device shown in Figure 11, a conductor 631 is provided embedded in the insulator 640. Furthermore, a conductor 632 is provided on the conductor 631. The conductor 631 is connected to the transistor 30 It can function as a plug that is electrically connected to 0. Also, the conductor 632 is conductive It is electrically connected to transistor 300 via body 631.

[0274] Figure 11 shows an example of a semiconductor device constructed on substrate 311. Conductor 632 is an example For example, a circuit provided on a chip with a different configuration than that provided on substrate 311, and bumps, wires Functions as an electrode pad for connection using methods such as yard bonding and clip bonding. To possess.

[0275] Figure 15 shows the semiconductor device shown in Figure 11 on a printed circuit board (Printed Circuit Board). Figure 15 shows an example of placement on the PCB (it Board) 638 via bumps 637. Now, in the semiconductor device shown in Figure 11, the surface on which the conductor 632 is exposed and the printed circuit board 63 8 and are positioned so that they face each other via bump 637. Also, to maintain strength, back electrode A resin layer 641 or the like may be provided on 318.

[0276] Figure 16 shows the semiconductor device shown in Figure 11 arranged on a printed circuit board 638, with wired connections. An example of connecting the conductor 632 to other chips using a binding is shown in Figure 16. In a semiconductor device, the surface on which the conductor 632 is exposed is placed on the printed circuit board 638 with the surface facing upwards. The surface on which the back electrode 318 is provided and the printed circuit board 638 are separated by a resin layer 639. They are arranged so as to face each other. The wire 642 is bonded to the conductor 632.

[0277] Here, the conductive material 632 is placed in the diffusion layer 314a or diffusion layer 314b of the transistor 300. By providing the conductor that is connected to the transistor 300 and the conductor 6 in superimposition, Shorten the routing of the conductor between 32 and reduce the resistance between transistor 300 and conductor 632. It can be made lower. More specifically, for example, as shown in Figure 1, the conductor 328b, It is preferable to provide the conductor 632 so as to overlap with at least one of the conductors 328. Furthermore, conductor 356 and conductor 518 are each at least partially conductor 6 It is preferable that it be provided so as to overlap with 32.

[0278] By shortening the routing of the conductive material between transistor 300 and conductor 632, the resistance is reduced. Because it can be made lower, for example, in the semiconductor device shown in Figure 11, each wiring, Specifically, for example, conductors provided in insulators 326, 354, 516, etc. The thickness of the conductor 632 can be reduced. Therefore, in the semiconductor device shown in Figure 11 This makes it possible to miniaturize semiconductor devices.

[0279] In one embodiment of the present invention, a large-capacity battery pack may be connected to the energy storage device. In a battery pack connected to an energy storage device according to one aspect of the present invention, rapid charging, rapid discharging, etc. are performed. This can happen. Therefore, a large current may flow through transistor 300.

[0280] When a large current flows through transistor 300, the amount of heat generated by transistor 300 is large. This may be a problem. OS transistors suppress variations in characteristics due to temperature changes. Therefore, by using an OS transistor as transistor 500, Even when the heat generated by transistor 300 increases, the semiconductor device operates stably. It can be made to happen.

[0281] The configuration shown in Figure 17 has a transistor 500 on the substrate 311b as the first structure. A layer 585 is provided, and a conductor 610b, a conductor 631, etc. are provided on the layer 585, and a conductor 63 An insulator 901 and a conductor 63 are provided on top of the first layer and embedded in the insulator 901. 2 is provided, and as a second structure, a configuration having a layer 385 is provided, and the insulator 322 of layer 385 Instead, a laminated structure of an insulator 322 and an insulator 902 on the insulator 322 is used, and the first The structure has a configuration in which the first structure and the second structure are bonded together. Body 322b is provided, and conductive material is provided so as to penetrate the substrate 311b and the insulator 322b. A body 903 is provided. The conductive body 903 and the printed circuit board are arranged facing each other, The conductor 903 and the wiring on the printed circuit board can be electrically connected using the pump. ru.

[0282] Here, it is preferable that conductor 328 and conductor 632 have the same main component metal element. Furthermore, it is believed that insulator 901 and insulator 902 are composed of the same components. preferable.

[0283] For example, conductors 328 and 632 contain Cu, Al, Sn, Zn, W, Ag, and Pt. Alternatively, materials such as Au can be used. Due to their ease of bonding, Cu, Al, and W are preferred. , or Au is used. In addition, silicon oxide and nitrogen oxide are used for insulators 901 and 902. Silicon oxide, silicon nitride, silicon nitride, titanium nitride, etc., can be used.

[0284] In other words, the same metal material as described above is used for each of the conductors 328 and 632. It is preferable to use the following: In addition, the insulator 901 and the insulator 902 are each provided with the above-mentioned It is preferable to use the same insulating material. By using this configuration, the bonding yield It can be done well.

[0285] Furthermore, the conductor 328 and the conductor 632 may have a multilayer structure of multiple layers. The bonding is sufficient if the surface layer (joint surface) is made of the same metal material. Also, insulator 901 and insulator 902 may also have a multilayer structure with multiple layers, in which case the surface layer (bonding surface) is the same insulation. Any material will do.

[0286] This bonding process ensures good electrical connection between the conductor 328 and the conductor 632. This is possible. Furthermore, the insulators 901 and 902 have sufficient mechanical strength. A connection can be established.

[0287] For joining metal layers, sputtering is used to remove surface oxide films and impurity adsorption layers. Surface activation bonding method: Surfaces are cleaned and activated by removing impurities, etc., and then brought into contact with each other to bond them. Alternatively, a diffusion bonding method can be used, which uses both temperature and pressure to join surfaces together. Both can be used. Since bonding occurs at the atomic level in both cases, not only is it electrical, but also Mechanically superior bonding can also be achieved.

[0288] Furthermore, for bonding the insulating layers, high flatness is achieved by polishing, etc., followed by oxygen plasma The surfaces, which have been treated to be hydrophilic, are brought into contact to temporarily bond them, and then permanently bonded by dehydration through heat treatment. Hydrophilic bonding methods can be used. Hydrophilic bonding methods also involve bonding at the atomic level. Therefore, a mechanically superior bond can be obtained.

[0289] Because the bonding surface contains both an insulating layer and a metal layer, for example, surface activation bonding method This can be done by combining it with a hydrophilic bonding method.

[0290] For example, after polishing, the surface is cleaned, and an anti-oxidation treatment is applied to the surface of the metal layer, followed by hydrophilicity. Methods such as processing and joining can be used. In addition, the surface of the metal layer can be treated with Au or other materials. A metal that is difficult to oxidize may be used, and hydrophilic treatment may be performed. Furthermore, a joining method other than the one described above may be used. It's okay to be there.

[0291] By using this structure, semiconductor devices using transistors having oxide semiconductors This suppresses fluctuations in electrical characteristics and improves reliability. Alternatively, oxidation In a battery control circuit using a transistor with a material semiconductor, miniaturization or high integration is achieved. It is possible.

[0292] This embodiment can be appropriately combined with descriptions of other embodiments.

[0293] (Embodiment 5) This embodiment describes a metal oxide according to one aspect of the present invention.

[0294] <<Metal Oxides>> It is preferable to use a metal oxide that functions as an oxide semiconductor as oxide 530. The following describes metal oxides applicable to the oxide 530 according to the present invention.

[0295] The metal oxide preferably contains at least indium or zinc. In particular, indium Preferably, it contains um and zinc. In addition, gallium and yttrium may be added. It is preferable that it contains tin, etc. Also, boron, titanium, iron, nickel, germanium Nium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tan It contains one or more types selected from tul, tungsten, magnesium, etc. That's good too.

[0296] Here, the metal oxide is In-M-Zn oxide, which has indium, element M, and zinc. Let's consider the case where it is a substance. Note that element M is aluminum, gallium, yttrium, and Let M be tin. Other elements that can be used for element M include boron, titanium, iron, and nickel. Germanium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium Examples include um, tantalum, tungsten, and magnesium. However, as for element M, as mentioned above... In some cases, it is acceptable to combine multiple elements.

[0297] In this specification, metal oxides containing nitrogen are also referred to as metal oxides (metal oxides). They are sometimes collectively referred to as metal oxynitrides (metal oxides). Also, metal oxides containing nitrogen are sometimes called metal oxynitrides (metal oxides). It may also be called tal oxynitride.

[0298] [Structure of metal oxides] Oxide semiconductors (metal oxides) include single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. It can be divided into conductors and conductors. Examples of non-single-crystal oxide semiconductors include CAAC-OS, multi-phase crystalline oxide semiconductor, nc-OS (nanocrystalline oxide semiconductor) conductor), pseudo-amorphous oxide semiconductor (a-like OS: amorphous (us-like oxide semiconductors), and amorphous oxide semiconductors It has a body, etc.

[0299] CAAC-OS has c-axis orientation and multiple nanocrystals are linked in the ab-plane direction. It has a crystalline structure that is linked and distorted. Note that distortion refers to the linkage between multiple nanocrystals. Within a region, between a region with a aligned grid arrangement and another region with a aligned grid arrangement, the grid arrangement This refers to the point where the orientation has changed.

[0300] Nanocrystals are based on a hexagonal shape, but they are not necessarily regular hexagons; they can also be non-regular hexagonal. There are also cases where the distortion has a grid arrangement such as pentagons and heptagons. Furthermore, in CAAC-OS, even near strain, clear grain boundaries (grain bows) are present. It is difficult to confirm that it is also called a lattice. That is, due to the distortion of the lattice arrangement, It can be seen that the formation of grain boundaries is suppressed. This is because CAAC-OS is in the ab plane direction. In this case, the arrangement of oxygen atoms is not dense, and the substitution of metal elements increases the interatomic bond distance. This is because distortion can be tolerated due to changes in the distance between the elements.

[0301] Furthermore, CAAC-OS consists of a layer containing indium and oxygen (hereinafter referred to as the In layer), and A layered crystal in which layers containing element M, zinc, and oxygen (hereinafter referred to as (M,Zn) layers) are stacked. It tends to have a structure (also called a layered structure). Note that indium and element M are relative to each other. It is interchangeable, and if element M in the (M,Zn) layer is replaced with indium, then (In,M,Zn It can also be represented as a layer. Furthermore, if the indium in the In layer is replaced by element M, (In, It can also be represented as layer M.

[0302] CAAC-OS is a highly crystalline metal oxide. On the other hand, CAAC-OS has a clear bond. Because it is difficult to confirm grain boundaries, a decrease in electron mobility caused by grain boundaries is less likely to occur. It can be said that... Also, the crystallinity of metal oxides decreases due to the inclusion of impurities and the formation of defects. Because this can sometimes occur, CAAC-OS is a metal oxide with few impurities or defects (such as oxygen deficiencies). It can also be said that metal oxides containing CAAC-OS have stable physical properties. Therefore, metal oxides containing CAAC-OS are heat-resistant and highly reliable.

[0303] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially regions larger than 1 nm). It has periodicity in the atomic arrangement in the region of 3 nm or less. Also, nc-OS has different na No regularity is observed in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the entire film. Therefore, depending on the analytical method, nc-OS may be a-like OS or amorphous oxide semiconductor. It can sometimes be indistinguishable from the body.

[0304] Furthermore, In- is a type of metal oxide containing indium, gallium, and zinc. Ga-Zn oxide (hereinafter referred to as IGZO) adopts a stable structure when formed into the nanocrystals described above. In some cases, IGZO tends to have difficulty growing crystals in the atmosphere, so large bonds may form. Crystals smaller than crystals (here, crystals of several millimeters or several centimeters) (for example, as mentioned above) In some cases, forming the material into nanocrystals can result in a more structurally stable material.

[0305] a-like OS is a metallic acid having a structure between nc-OS and amorphous oxide semiconductors. It is a monster. a-like OS has porous or low-density regions. That is, a-li ke OS has lower crystallinity compared to nc-OS and CAAC-OS.

[0306] Oxide semiconductors (metal oxides) can take on diverse structures, each possessing different properties. An oxide semiconductor according to one aspect of the present invention is an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, and a-li It may have two or more of the following: ke OS, nc-OS, and CAAC-OS.

[0307] [impurities] Here, we will explain the effects of various impurities in metal oxides.

[0308] When impurities are introduced into oxide semiconductors, defect levels or oxygen vacancies may be formed. Therefore, when impurities are mixed into the channel formation region of the oxide semiconductor, the oxide semiconductor is affected. The electrical characteristics of the transistors used are prone to fluctuation, which can lead to reduced reliability. If the channel formation region contains oxygen vacancies, the transistor will exhibit normally-on characteristics. It's cheap.

[0309] Furthermore, the above defect levels may include trap levels. (Metal oxide traps) Charges trapped in energy levels take a long time to disappear, almost like fixed charges. This behavior can occur. Therefore, metal oxides with a high trap level density can form channels in the channel formation region. The transistors in this device may exhibit unstable electrical characteristics.

[0310] Furthermore, if impurities are present in the channel formation region of an oxide semiconductor, the channel formation region will Crystallinity may be low, and the crystallinity of the oxide provided in contact with the channel formation region The value may be low. If the crystallinity of the channel formation region is low, the stability of the transistor may also be affected. This tends to reduce reliability. Also, the oxide formation adjacent to the channel formation region If the crystallinity is low, interface states may form, reducing the stability or reliability of the transistor. There is.

[0311] Therefore, in order to improve the stability or reliability of transistors, oxide semiconductor chips Reducing the impurity concentration in the channel formation region and its vicinity is effective. These include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon, and others.

[0312] Specifically, in the channel formation region of the oxide semiconductor and its vicinity, secondary ions Secondary Ion Mass Spectrometry (SIMS) The concentration of the above impurities obtained by (try) is 1 × 1018 atoms / cm 3 Below, good Mashiku is 2 x 10 16 atoms / cm 3 Do the following: Or, the channel of the oxide semiconductor The above impurities are obtained in the Nell-forming region and its vicinity by elemental analysis using EDX. The concentration of the substance shall be 1.0 atomic% or less. Furthermore, element M shall be used as the oxide semiconductor. When using an oxide containing the oxide, in the channel formation region of the oxide semiconductor and its vicinity The concentration ratio of the above impurities to element M is set to less than 0.10, preferably less than 0.05. Here, the concentration of element M used when calculating the above concentration ratio is calculated by determining the concentration of the above impurity. The concentration may be the same as the concentration in the region, or it may be the concentration in the oxide semiconductor.

[0313] Furthermore, metal oxides with reduced impurity concentrations have a lower defect level density, thus reducing the trap level density. The degree may also decrease.

[0314] Furthermore, when hydrogen enters an oxygen vacancy in a metal oxide, the oxygen vacancy and hydrogen combine to form V O H It may form V O H acts as a donor, generating electrons, which are carriers. Sometimes, some of the hydrogen combines with oxygen that is bonded to a metal atom, and the hydrogen acts as a carrier. It may generate offspring.

[0315] Therefore, transistors using oxide semiconductors that contain a lot of hydrogen are normally ohms. It tends to develop negative properties. Also, hydrogen in oxide semiconductors is affected by stress such as heat and electric fields. Because it is easily moved, if oxide semiconductors contain a lot of hydrogen, the reliability of the transistor decreases. There is a risk that this may happen.

[0316] In other words, V in metal oxides O Reduce H as much as possible, high purity intrinsic or substantially high purity It is preferable to make it genuine. In this way, V O To obtain an oxide semiconductor with sufficiently reduced H content This refers to the removal of impurities such as water and hydrogen from oxide semiconductors (also known as dehydration and dehydrogenation treatment). (This may be included.) and supplying oxygen to oxide semiconductors to fill oxygen vacancies (acidification). This is important. (It may be referred to as "processing.") O Impurities such as H are sufficiently reduced. By using oxide semiconductors in the channel formation region of transistors, stable electrical characteristics can be achieved. It can be granted.

[0317] Furthermore, it is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. When lowering the carrier concentration of an oxide semiconductor, the impurity concentration in the oxide semiconductor is The defect level density should be lowered. In this specification, the impurity concentration is low and the defect level density is low. A low level density is referred to as high-purity intrinsic or substantially high-purity intrinsic. Note that this refers to oxide semiconductors. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, and nickel. Examples include kel, silicon, etc.

[0318] In particular, the hydrogen contained in oxide semiconductors reacts with the oxygen bonded to the metal atoms to form water. Therefore, oxygen vacancies may form in oxide semiconductors. Channel formation regions in oxide semiconductors If an oxygen deficiency is present in the region, the transistor may exhibit normally-on characteristics. Furthermore, a defect where hydrogen fills an oxygen vacancy acts as a donor, generating electrons, which act as carriers. This can happen. Also, some of the hydrogen combines with oxygen that is bonded to a metal atom, and in the carrier In some cases, certain electrons are generated. Therefore, an oxide semiconductor containing a large amount of hydrogen is used. Transistors tend to exhibit normally-on characteristics.

[0319] A defect where hydrogen is placed in an oxygen vacancy (V O H) can function as a donor for oxide semiconductors. However, it is difficult to quantitatively evaluate this defect. Therefore, in oxide semiconductors... In some cases, the evaluation is based on the carrier concentration rather than the donor concentration. Therefore, this statement In books and other materials, the parameter for oxide semiconductors is not the donor concentration, but rather the application of an electric field. In some cases, a carrier concentration that assumes the conditions may be used. That is, the "carrier" described in this specification, etc. "A concentration" can sometimes be rephrased as "donor concentration."

[0320] Therefore, it is preferable that the hydrogen content in the oxide semiconductor be reduced as much as possible. Specifically In oxide semiconductors, the hydrogen concentration obtained by SIMS is 1 × 10⁻⁶. 20 Atom s / cm 3 Less than 1 × 10 19 atoms / cm 3 Less than 5x 10 18 atoms / cm 3 Less than 1 × 10 18 atoms / cm 3 Not yet The requirements are met. An oxide semiconductor with sufficiently reduced impurities such as hydrogen is used for the transistor channel. By using it in the formation region, stable electrical properties can be imparted.

[0321] Furthermore, the carrier concentration of the oxide semiconductor in the channel formation region is 1 × 10⁻⁶. 18 cm -3 below Preferably, 1 × 10 17 cm-3 It is more preferable that it be less than 1 × 10 16 cm -3 It is even more preferable that it be less than 1 × 10 13 cm -3 Being less than More preferably, 1 × 10 12 cm -3 It is even more preferable that it be less than [a certain value]. There are no particular limitations on the lower limit of the carrier concentration of the oxide semiconductor in the formation region, but for example... ba, 1 × 10 -9 cm -3 It can be done this way.

[0322] According to one aspect of the present invention, a semiconductor device with good reliability can be provided. According to one aspect of the invention, a semiconductor device having good electrical characteristics can be provided. According to one aspect of the present invention, a semiconductor device with a large on-current can be provided. According to one aspect of the present invention, a semiconductor device that can be miniaturized or highly integrated can be provided. Furthermore, one aspect of the present invention aims to provide a low-power semiconductor device. ru.

[0323] <<Other Semiconductor Materials>> The semiconductor materials that can be used for oxide 530 are not limited to the metal oxides mentioned above. As a material 530, it is a semiconductor material with a band gap (not a zero-gap semiconductor). Conductive materials may be used. For example, semiconductors of elemental silicon, gallium arsenide, etc. Which compound semiconductors, layered materials that function as semiconductors (also known as atomic layer materials, two-dimensional materials, etc.) It is preferable to use materials such as (u) as semiconductor materials. In particular, layered materials that function as semiconductors It is preferable to use this as a semiconductor material.

[0324] Here, in this specification, etc., "layered material" is a general term for a group of materials having a layered crystalline structure. Yes, it exists. Layered crystal structures are formed by layers created by covalent or ionic bonds, such as van der Wa. It is a structure in which layers are attached via weaker bonds than covalent or ionic bonds, such as the Ruhls force. Layered materials have high electrical conductivity within a single layer, meaning they have high two-dimensional electrical conductivity. A material that functions as a semiconductor and has high two-dimensional electrical conductivity is used in the channel formation region. This makes it possible to provide transistors with a large on-current.

[0325] Examples of layered materials include graphene, silicene, and chalcogenides. It is a compound containing chalcogens. Furthermore, chalcogens are a general term for elements belonging to Group 16. It contains oxygen, sulfur, selenium, tellurium, polonium, and livermorium. Examples of chalcogenides include transition metal chalcogenides and group 13 chalcogenides. .

[0326] For example, a transition metal chalcogenide that functions as a semiconductor can be used as oxide 530. Preferably, a transition metal chalcogenide applicable as oxide 530 is specified. These include molybdenum sulfide (typically MoS2) and molybdenum selenide (typically MoS2) e2), molybdenum tellurium (typically MoTe2), tungsten sulfide (typically W S2), tungsten selenide (typically WSe2), tungsten tellurium (typically (WTe2), hafnium sulfide (typically HfS2), hafnium selenide (typically (HfSe2), zirconium sulfide (typically ZrS2), zirconium selenide (alternative) Examples include ZrSe2).

[0327] This embodiment can be appropriately combined with descriptions of other embodiments.

[0328] (Embodiment 6) In this embodiment, regarding the example in which the amplifier described in the above embodiment is an electronic component, This will be explained using Figure 18.

[0329] In this embodiment, using Figure 18, the semiconductor device of the present invention is mounted on a chip 1200. Here is an example. Chip 1200 has multiple circuits (systems) mounted on it. Uni, the technology of integrating multiple circuits (systems) onto a single chip is called system-on-chip ( It is sometimes referred to as a System on Chip (SoC).

[0330] Figure 18 shows an example in which multiple chips are provided on the printed circuit board 1203. On the printed circuit board 1203, a chip 1201 is provided. 1 is provided with at least a part of a semiconductor device according to one aspect of the present invention. For example, the previous The semiconductor device shown in the embodiment is provided with a gate driver and a power control circuit. Furthermore, the chip 1201 has a power MOSFET, which is present in the semiconductor device shown in the previous embodiment. At least one ET is provided. Multiple bumps 120 A connector (2) is provided and connects to the printed circuit board 1203.

[0331] By using the configuration of a semiconductor device according to one aspect of the present invention, within a single chip, It is possible to stack circuits such as gate drivers and power control circuits on a MOSFET. Therefore, it is possible to reduce the number of chips in electronic components.

[0332] By reducing the number of chips, circuit operation can be made stable even in environments with vibration. This can be done. Furthermore, the bumps can be used to mechanically strengthen the connection electrodes between the chip and the printed circuit board. By making a solid connection and ensuring a reliable electrical connection, a vibration-resistant structure is achieved. Therefore, it is suitable for, for example, electronic components mounted in vehicles and mobile devices. ru.

[0333] Furthermore, by using the semiconductor device configuration according to one aspect of the present invention, chip integration becomes possible. This allows for miniaturization of chips, which in turn enables miniaturization of electronic devices. Miniaturizing the device can sometimes reduce power consumption.

[0334] The printed circuit board 1203 shown in Figure 18 includes chip 1201, chip 1221, and chip 1201. It has chip 1222, etc. Chip 1221 has, for example, an inductor 752, and chip 1222 has For example, a capacitive element 753 can be provided. Note that the inductor 752 and the capacitive element 75 The third prize may be placed on chip 1201, rather than on a different chip. .

[0335] In one embodiment of the present invention, an amplifier has a plurality of power MOSFETs as shown in the example in Figure 1. In this case, each power MOSFET can be placed on a different chip. For example, see Figure In the printed circuit board 1203 shown in 18, the first power MOSFET is located on chip 1201 By providing it there, a second power MOSFET can be provided on chip 1225. By providing a power MOSFET, leakage between MOSFETs can be reduced. .

[0336] Alternatively, multiple power MOSFETs can be provided on the same substrate within a single chip. Even if gate drivers, power control circuits, etc. are stacked on the multiple power MOSFETs Good. This will enable circuit integration.

[0337] It is preferable that the printed circuit board 1203 is provided with an integrated circuit 1223. 1223 has the function of supplying control signals, power, etc. to chip 1201. Integrated circuit 122 3. For example, it has a CPU, arithmetic circuits, conversion circuits, etc. The arithmetic circuits are, for example, image processing and multiply-accumulate circuits. It may also have a function to perform calculations. Furthermore, the conversion circuit may be, for example, an A / D (analog / digital) converter. It may have one or both of the following: a conversion circuit and a D / A (digital-to-analog) conversion circuit. stomach.

[0338] Furthermore, various chips provided on the printed circuit board 1203 include DRAM and flash memory. A memory or other storage device may be provided. Also, the printed circuit board 1203 may have wireless communication capabilities. A chip with a function for making a signal may be provided.

[0339] This embodiment can be appropriately combined with descriptions of other embodiments.

[0340] (Embodiment 7) This embodiment describes an example of an electronic device according to one aspect of the present invention.

[0341] An example of an electronic device equipped with an amplifier according to one aspect of the present invention will be explained with reference to Figure 19.

[0342] An amplifier according to one aspect of the present invention can be used in electronic devices such as sound reproduction devices. An amplifier according to one embodiment of the present invention can be used in speakers and the like. The device can be used in electronic devices such as those containing speakers. It can also be used as an audio playback device. Examples include car audio systems and digital audio players. One embodiment of the amplifier can be used in headphones, earphones, and the like.

[0343] The gate driver 760 shown in the above embodiment controls the transistor 762 and the transistor 762 The switching frequency of the ST763 is, for example, more than 10 times the frequency of the audio signal. It is preferable that the switching frequency is, for example, 100 kHz or more and 5 MHz or less. It is preferable that the cutoff frequency of the low-pass filter be higher than the audible frequency range. It is preferable to adjust the inductance of the inductor and the capacitance of the capacitive element so that they fall within the specified range. It seems so.

[0344] The cleaning robot 7000 shown in Figure 19A includes a secondary battery, an illuminance sensor, a microphone, and a Cameras, speakers, displays, various sensors (infrared sensors, ultrasonic sensors, accelerometers) It is equipped with a piezo sensor, optical sensor, gyro sensor, etc., and a moving mechanism. The cleaning robot 7000 is equipped with wheels, a suction nozzle, etc. 00 is self-propelled, can detect dust, and can suck up the dust from a suction port located on its underside. Cut.

[0345] The microphone has the function of detecting acoustic signals such as the user's voice and ambient sounds. Furthermore, the speaker has the function of emitting audio signals such as voice and warning sounds. The robot 7000 analyzes the audio signal input via the microphone and It can emit necessary audio signals from the speaker. In the cleaning robot 7000. It uses a microphone and speaker to communicate with the user. This is possible.

[0346] Amplification of audio signals input via microphone, and output from speaker An amplifier according to one embodiment of the present invention can be used to amplify an audio signal.

[0347] The camera has the function of imaging the area around the cleaning robot 7000. The 7000 has the ability to move using a mobile mechanism. The cleaning robot 7000 has a camera It uses this method to capture images of the surroundings and analyzes the images to detect obstacles while moving. It is possible.

[0348] The smartphone 7210 shown in Figure 19B is an example of a mobile information terminal. The N7210 has a microphone, camera, speaker, various sensors, and display unit. The amplification of the audio signal input via the microphone, and the output from the speaker. An amplifier according to one embodiment of the present invention can be used to amplify an audio signal.

[0349] The earphone 7400 shown in Figure 19C consists of a main unit 7401, a housing 7402, and an ear hook. It has 7403 and a circuit board 7404 which is placed inside the housing 7402. As 04, using a chip equipped with an amplifier according to one aspect of the present invention as shown in the previous embodiment This makes it possible to provide small earphones by using this chip. It also allows for the provision of lightweight earphones.

[0350] Furthermore, it is preferable that the earphone 7400 has wireless communication capabilities. The 7400 preferably has a secondary battery inside the housing 7402. The earphone has a secondary battery By having this feature, it can be used without being connected to a power source or via a wired connection.

[0351] Furthermore, it is preferable that the earphone 7400 has wireless communication capabilities. In this case, the communication protocol or communication technology is LTE (Long Term Evolution). ion), GSM (Global System for Mobile Commun ication: registered trademark), EDGE (Enhanced Data Rates f or GSM Evolution), CDMA2000(Code Division) Communication technologies such as Multiple Access 2000, W-CDMA (registered trademark), etc. Standards, or Wi-Fi®, Bluetooth®, ZigBee (Registered Trademark) and other specifications standardized by IEEE can be used. Because the device has wireless communication capabilities, it can connect to devices that output audio signals via a wired connection. It can be used without

[0352] The television 7500 shown in Figure 19D consists of a display unit 7501 and a speaker 7502. It possesses. An amplifier according to one aspect of the present invention is used to amplify the audio signal emitted from a speaker. It is possible.

[0353] Figure 19E shows the interior of vehicle 8400. Vehicle 8400 includes a display unit 8411 and a speed It has a cable 8403 and a microphone 8404. Input is received via the microphone. The present invention relates to the amplification of audio signals and the amplification of audio signals emitted from speakers. One embodiment of the amplifier can be used.

[0354] This embodiment can be appropriately combined with descriptions of other embodiments. [Explanation of Symbols]

[0355] :21:Transistor, 22:Transistor, 23:Transistor, 24:Transistor 25: Transistor, 50: Comparator, 101: Buffer circuit, 102: Level sensor 103: Buffer circuit, 104: Buffer circuit, 111: Transistor, 11 2: Transistor, 113: Capacitive element, 114: Capacitive element, 121: Transistor, 12 2: Transistor, 131: Inverter circuit, 132: Inverter circuit, 141: Trans Zista, 142: Transistor, 143: Transistor, 144: Transistor, 151 :transistor, 152:transistor, 153:transistor, 154:transistor , 155: Capacitive element, 211: Control circuit, 212: Photocoupler, 213: Photocoupler , 214: Reference voltage generation circuit, 215: Reference voltage generation circuit, 216: Reference voltage generation circuit, 300: Transistor, 311: Substrate, 311b: Substrate, 313: Semiconductor area, 314a : Diffusion layer, 314b: Diffusion layer, 315: Insulator, 316: Conductor, 317: Diffusion layer, 31 8: Back electrode, 319: Region, 320: Insulator, 322: Insulator, 322b: Insulator, 3 24: Insulator, 326: Insulator, 328: Conductor, 328b: Conductor, 330: Conductor 350: insulator, 352: insulator, 354: insulator, 356: conductor, 385: layer, 50 0: Transistor, 503: Conductor, 503a: Conductor, 503b: Conductor, 510: Insulator Edge material, 512: insulator, 514: insulator, 516: insulator, 518: conductor, 520: insulator Edge material, 522: insulator, 524: insulator, 530: oxide, 530a: oxide, 530b : Oxide, 530c: Oxide, 540a: Conductor, 540b: Conductor, 542a: Conductor 542b: Conductor, 543a: Region, 543b: Region, 544: Insulator, 546: Conductive Body, 546b: Conductor, 548: Conductor, 548b: Conductor, 550: Insulator, 560: Conductor, 560a: Conductor, 560b: Conductor, 574: Insulator, 580: Insulator, 58 1: insulator, 582: insulator, 585: layer, 600: capacitive element, 610a: conductor, 61 0b: Conductor, 620: Conductor, 630: Insulator, 631: Conductor, 632: Conductor, 6 37: Bump, 638: Printed circuit board, 639: Resin layer, 640: Insulator, 641: Resin Layer, 642: Wire, 750: Amplifier, 751: Semiconductor, 752: Inductor, 7 53: Capacitive element, 760: Gate driver, 760a: Driver circuit, 760a1: Driver Iba circuit, 760a2: driver circuit, 761: power supply control circuit, 762: transistor, 763: Transistor, 771: Comparator, 772: Comparator, 773: Carrier wave Generating circuit, 774: Resistor element, 775: Resistor element, 776: Capacitor element, 777: Resistor element , 778: Resistor element, 779: Capacitor element, 791: Terminal, 792: Terminal, 793: Terminal, 794: Terminal, 795: Terminal, 901: Insulator, 902: Insulator, 903: Conductor, 12 00: Chip, 1201: Chip, 1202: Bump, 1203: Printed circuit board, 122 1: Chip, 1222: Chip, 1223: Integrated circuit, 1225: Chip, 7000: Sweep Except robot, 7210: smartphone, 7400: earphone, 7401: main unit, 74 02: Enclosure, 7403: Earhook, 7404: Circuit board, 7500: Television, 7 501: Display unit, 7502: Speaker, 8400: Vehicle, 8403: Speaker, 8404 : Microphone, 8411: Display unit

Claims

[Claim 1] It has a first transistor and a second transistor, A second layer is provided above the first layer. The first transistor is provided in the first layer, The second transistor is provided in the second layer, The channel formation region of the first transistor comprises one material selected from germanium, silicon germanium, gallium arsenide, gallium aluminum arsenide, indium phosphide, silicon carbide, zinc selenide, gallium nitride, and gallium oxide. The channel formation region of the second transistor has an oxide semiconductor, The first transistor is electrically connected to the second transistor via a first conductor provided in the first insulating layer of the first layer. Semiconductor equipment.

Images