Ceramic electronic components

Abstract

We provide highly reliable ceramic electronic components. [Solution] The ceramic electronic component includes a body 110 containing a dielectric layer 111 and internal electrodes 121, 122, and external electrodes 131, 132 disposed on the body and connected to the internal electrodes, wherein at least a portion of the dielectric layer contains lanthanum-based rare earth elements (RE) including tin (Sn) and dysprosium (Dy), and in at least a portion of the dielectric layer, the molar ratio of tin (Sn) to dysprosium (Dy) (Sn / Dy) is 0.15 to 0.30.

Description

Technical Field

[0001] The present disclosure relates to ceramic electronic components, for example, multilayer ceramic capacitors (MLCCs).

Background Art

[0002] A multilayer ceramic capacitor, which is one of ceramic electronic components, is a chip-shaped capacitor mounted on printed circuit boards of various electronic products such as video equipment like liquid crystal display (LCD) devices and plasma display panel (PDP) devices, computers, smartphones, and mobile phones, and serves to charge or discharge electricity.

[0003] Such multilayer ceramic capacitors are becoming increasingly miniaturized / highly integrated in line with recent trends. In order to achieve miniaturization / highly integration while satisfying the ultra-high dielectric properties for next-generation products, since thinning is required, it has become increasingly important to apply a composition material capable of realizing high dielectric properties in the dielectric layer.

Summary of the Invention

Problems to be Solved by the Invention

[0004] One of the various objects of the present disclosure is to provide a ceramic electronic component with excellent reliability.

Means for Solving the Problems

[0005] One of the various solutions proposed by the present disclosure is to apply an optimal composition ratio of tin (Sn) and dysprosium (Dy) contained in the dielectric layer.

[0006] For example, a ceramic electronic component according to one example includes a body containing a dielectric layer and internal electrodes, and external electrodes disposed on the body and connected to the internal electrodes, wherein at least a portion of the dielectric layer contains lanthanum-based rare earth elements (RE) including tin (Sn) and dysprosium (Dy), and the molar ratio (Sn / Dy) of tin (Sn) and dysprosium (Dy) in at least a portion of the dielectric layer can be 0.15 to 0.30. [Effects of the Invention]

[0007] One of the various effects of this disclosure is that it can provide highly reliable ceramic electronic components. [Brief explanation of the drawing]

[0008] [Figure 1] This is a schematic perspective view of a ceramic electronic component as an example. [Figure 2] This is a schematic cross-sectional view showing a cross-section along the line I-I' in Figure 1. [Figure 3] This is a schematic cross-sectional view showing a cross-section along the line II-II' in Figure 1. [Figure 4] Figure 1 is an exploded perspective view showing a disassembled example of a ceramic electronic component. [Modes for carrying out the invention]

[0009] The present disclosure will be described below with reference to the attached drawings. The shapes and sizes of elements in the drawings may be enlarged or reduced (or highlighted or simplified) for clearer explanation.

[0010] In drawings, the first direction can be defined as the lamination direction or thickness direction, the second direction as the length direction, and the third direction as the width direction.

[0011] Figure 1 is a schematic perspective view of an example ceramic electronic component; Figure 2 is a schematic cross-sectional view along line I-I' in Figure 1; Figure 3 is a schematic cross-sectional view along line II-II' in Figure 1; and Figure 4 is an exploded perspective view showing the main body of the example ceramic electronic component in Figure 1 disassembled.

[0012] Referring to the drawing, an example of a ceramic electronic component 100 includes a body 110 containing a dielectric layer 111 and internal electrodes 121 and 122, and external electrodes 131 and 132 arranged in the body 110 and connected to the internal electrodes 121 and 122. In this case, at least a portion of the dielectric layer 111 region P contains lanthanum-based rare earth elements (RE) including tin (Sn) and dysprosium (Dy), and the molar ratio of tin (Sn) to dysprosium (Dy) (Sn / Dy) in at least a portion of the dielectric layer P can be about 0.15 to 0.30. Also, the molar ratio of tin (Sn) to lanthanum-based rare earth elements (RE) (Sn / RE) can be about 0.15 to 0.25.

[0013] On the other hand, for the development of next-generation ultra-compact, high-capacity products, it is important to introduce and solid-solve appropriate levels of A-site and / or B-site substitution elements into barium titanate-based materials with a perovskite structure represented by ABO3, in which additives are solid-solved, as the material for the dielectric layer. In particular, in order to achieve highly reliable properties, it is important to control the shrinkage behavior between each part and the influence on property realization down to the microscopic level through the combination and concentration adjustment of additives between each part constituting the product.

[0014] In this disclosure, in order to ensure thin-layer high reliability, a combination in which a donor with a high content is applied as a dopant to improve the solid solution efficiency at the A-site is applied as one example of a dielectric composition.

[0015] More specifically, in the case of rare earth elements known as A-site substitution elements for barium titanate, particularly dysprosium (Dy), which is a representative amphoteric element and an element capable of valence change to +2 and / or +3, and which helps improve oxygen vacancy and thus improves reliability, it has low solid solution efficiency and can be usefully utilized as a boundary element that separates the core and shell of grain after sintering.

[0016] On the other hand, in the case of recently developed products for achieving thin-layer high reliability, the application of high-temperature shortened firing methods is being considered to prevent breakage of internal electrodes in the thin layer and to match the sintering temperature. However, if the heat transfer required for sintering is insufficient, the solid solution efficiency of dysprosium (Dy) may decrease, and non-uniform solid solution characteristics may also degrade the characteristics of the final chip. Furthermore, if the sintering time is increased and sufficient heat is transferred for sintering, the dysprosium (Dy) element may also undergo complete solid solution, making core-shell separation difficult.

[0017] In products applying next-generation thin-layer design, a composition analyzer with minimal additive content, particularly low levels of dysprosium (Dy), which is difficult to dissolve at the A-site, can be considered. However, when the dysprosium (Dy) content is reduced in this way, there are ultimately limitations to the improvement in thin-layer reliability.

[0018] On the other hand, in this disclosure, dielectric compositions containing tin (Sn) can be applied. In this case, the substitution efficiency of the A-site can be improved, and therefore the content and composition ratio of rare earth elements can be changed. This allows for an increase in the content of tin (Sn) and dysprosium (Dy) and the application of an optimal composition ratio to improve thin-layer reliability.

[0019] In other words, in this disclosure, a composition containing tin (Sn) can be applied as the material for the dielectric layer 111, and therefore, reliability can be improved by increasing the content of dysprosium (Dy), which is an A-site substitution element. Furthermore, by selecting a combination that maximizes the appropriate level of A-site and B-site substitution efficiency, a composition ratio that enables the realization of excellent reliability characteristics can be provided.

[0020] From this perspective, an example dielectric composition may include a barium titanate matrix and may also contain lanthanum-based rare earth elements (RE) including tin (Sn) and dysprosium (Dy). In this case, the molar ratio of tin (Sn) to dysprosium (Dy) (Sn / Dy) can be approximately 0.15 to 0.30 so that the solid solution limit of dysprosium (Dy) can be controlled and effective uniform grain boundary segregation can be induced within the barium titanate lattice. Similarly, the molar ratio of tin (Sn) to lanthanum-based rare earth elements (RE) (Sn / RE) can be approximately 0.15 to 0.25 so that the solid solution limit of dysprosium (Dy) can be controlled and effective uniform grain boundary segregation can be induced within the barium titanate lattice in substantially the same proportion. On the other hand, per 100 moles of barium titanate base material, the tin (Sn) content can be 0.05 moles to 0.16 moles, and the dysprosium (Dy) content can be approximately 0.20 moles to 0.80 moles.

[0021] On the other hand, in one example of a dielectric composition, the lanthanum-based rare earth element (RE) may further include at least one of terbium (Tb), samarium (Sm), and gadolinium (Gd), in addition to dysprosium (Dy). Such rare earth elements can reduce the concentration of oxygen vacancies and further improve reliability by substituting the A-site of the ABO3 structure and acting as donors. Furthermore, rare earth elements can act as barriers that prevent the flow of electrons at grain boundaries, thereby suppressing the increase in leakage current.

[0022] On the one hand, according to an example, the dielectric composition can further include an acceptor element (AT) containing at least one of manganese (Mn), aluminum (Al), vanadium (V), and magnesium (Mg). Such an acceptor element (AT) can play a role in reducing the electron concentration by substituting the B-site of the ABO3 structure and playing the role of an acceptor. Therefore, it can play a role in suppressing the semiconductorization of the dielectric layer due to the solid solution of rare earth elements in the A-site. In addition, it can play a role in reducing the firing temperature and improving the high-temperature breakdown voltage characteristics of ceramic electronic components to which the dielectric composition is applied.

[0023] Also, according to an example, the dielectric composition can further include a donor element (DN) containing at least one of the above-mentioned lanthanum-based rare earth element (RE), niobium (Nb), and yttrium (Y). Such a donor element (DN) can similarly substitute the A-site of the ABO3 structure and play the role of a donor to reduce the concentration of oxygen vacancies and further improve the reliability. Similarly, it can act as a barrier to prevent the flow of electrons at the grain boundaries and play a role in suppressing the increase in leakage current.

[0024] At this time, in order to ensure an appropriate level of insulation resistance, the molar ratio (DN / AT) of the donor element (DN) and the acceptor element (AT) can be about 0.01 to 0.50.

[0025] Therefore, at least a partial region P of the dielectric layer 111 can contain a lanthanum-based rare earth element (RE) containing tin (Sn) and dysprosium (Dy). At this time, the molar ratio (Sn / Dy) of tin (Sn) and dysprosium (Dy) can be about 0.15 to 0.30. Also, the molar ratio (Sn / RE) of tin (Sn) and the lanthanum-based rare earth element (RE) can be about 0.15 to 0.25. On the other hand, with respect to 100 moles of the barium titanate-based base material, the content of tin (Sn) can be 0.05 moles to 0.16 moles, and the content of dysprosium (Dy) can be about 0.20 moles to 0.80 moles.

[0026] Furthermore, in at least a portion of region P of the dielectric layer 111, the lanthanum-based rare earth element (RE) may further include at least one of terbium (Tb), samarium (Sm), and gadolinium (Gd), in addition to dysprosium (Dy). Also, in at least a portion of region P of the dielectric layer 111, the dielectric composition for forming the dielectric layer 111 may further include an acceptor element (AT) containing at least one of manganese (Mn), aluminum (Al), vanadium (V), and magnesium (Mg). Furthermore, it may further include a donor element (DN) containing at least one of the lanthanum-based rare earth element (RE), niobium (Nb), and yttrium (Y). In this case, the molar ratio of the donor element (DN) to the acceptor element (AT) (DN / AT) can be approximately 0.01 to 0.50.

[0027] On the other hand, the composition of at least a portion of region P of the dielectric layer 111 can be measured by TEM (Transmission Electron Microscopy)-EDS (Energy Dispersive Spectrometer) elemental analysis. For example, after FIB (Focused Ion Beam) sampling for TEM analysis of a sample chip, the types and amounts of elements contained can be confirmed via TEM-EDS mapping. After this, in order to confirm the proportion of the analyzed elements that correspond to the base material, such as barium titanate, the analytical ratio of the element in question can be divided by the analytical ratio of titanium (Ti) to confirm whether the element is present in a few mole percent of the base material.

[0028] On the other hand, at least a portion P of the dielectric layer 111 can be placed in the active portion Ac, which will be described later.

[0029] The following provides a more detailed explanation of each component included in the ceramic electronic component 100 as an example.

[0030] There are no particular restrictions on the specific shape of the main body 110, but it can be hexahedral or a similar shape. Due to the shrinkage of the ceramic powder contained in the main body 110 during the firing process, the main body 110 may not be a perfectly straight hexahedron, but rather substantially hexahedral. If necessary, the outer shape of the main body 110 with corners, for example, the corner portions, can be rounded by polishing or other processes.

[0031] The main body 110 may have a first surface 1 and a second surface 2 facing each other in a first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and facing each other in a second direction, a fifth surface 5 and a sixth surface 6 connected to the first surface 1 and the second surface 2 and connected to the third surface 3 and the fourth surface 4, and facing each other in a third direction.

[0032] The main body 110 can be constructed by alternately stacking dielectric layers 111 and internal electrodes 121 and 122. The multiple dielectric layers 111 forming the main body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated to such an extent that they are difficult to confirm without using a scanning electron microscope (SEM).

[0033] The dielectric layer 111 can be formed by firing a ceramic green sheet containing ceramic powder, an organic solvent, and an organic binder. The ceramic powder can be a material with a high dielectric constant, such as a barium titanate (BaTiO3)-based material or a strontium titanate (SrTiO3)-based material, and preferably the barium titanate-based material described above can be used.

[0034] While the thickness td of the dielectric layer 111 is not particularly limited, generally, when the dielectric layer 111 is formed thinly with a thickness of less than 0.6 μm, reliability may decrease, especially when the thickness of the dielectric layer 111 is 0.4 μm or less. On the other hand, in this disclosure, excellent reliability can be ensured even when the thickness of the dielectric layer 111 is 0.4 μm or less, as described above. Therefore, when the thickness of the dielectric layer 111 is 0.4 μm or less, the effect of reliability improvement by this disclosure becomes more pronounced, and miniaturization and high capacitance of ceramic electronic components can be achieved more easily.

[0035] The thickness td of the dielectric layer 111 can represent the average thickness of the dielectric layer 111 placed between the internal electrodes 121 and 122. The average thickness of the dielectric layer 111 can be measured by scanning an image of the cross-section of the main body 110 in the length and thickness directions using a scanning electron microscope at 10,000x magnification. More specifically, the thickness of one dielectric layer can be measured at 30 equally spaced points in the length direction of the scanned image, and the average value can be measured. The 30 equally spaced points can be designated as active areas Ac. Furthermore, by extending this average value measurement to 10 dielectric layers 111 and measuring the average value, the average thickness of the dielectric layer 111 can be further generalized.

[0036] The main body 110 may include an active portion Ac in which capacitance is formed, comprising a plurality of first internal electrodes 121 and second internal electrodes 122 arranged facing each other with a dielectric layer 111 in between. The active portion Ac is the part that contributes to the formation of capacitance of the capacitor and can be formed by repeatedly stacking a plurality of first internal electrodes 121 and second internal electrodes 122 with a dielectric layer 111 in between.

[0037] The main body 110 may further include cover portions 112 and 113 positioned above and below the active portion Ac with respect to the thickness direction. The cover portions 112 and 113 may include an upper cover portion 112 positioned above the active portion Ac and a lower cover portion 113 positioned below the active portion Ac. The upper cover portion 112 and the lower cover portion 113 can be formed by laminating a single dielectric layer or two or more dielectric layers in the thickness direction on the upper and lower surfaces of the active portion Ac, respectively, and can essentially serve to prevent damage to the internal electrodes due to physical or chemical stress. The cover portions 112 and 113 do not contain internal electrodes and may contain the same material as the dielectric layer 111. For example, the cover portions 112 and 113 may contain ceramic materials, such as the barium titanate-based material mentioned above. The thickness of the cover portions 112 and 113 is not particularly limited. However, in order to more easily achieve miniaturization and high capacitance of ceramic electronic components, the thickness tp of the cover portions 112 and 113 can be 20 μm or less.

[0038] The main body 110 may further include margin portions 114 and 115 positioned on the sides of the active portion Ac. The margin portions 114 and 115 may include a margin portion 114 positioned on the fifth surface 5 and a margin portion 115 positioned on the sixth surface 6 of the main body 110. For example, the margin portions 114 and 115 may be positioned on both sides of the main body 110 in the width direction. The margin portions 114 and 115 may represent the regions between the ends of the internal electrodes 121 and 122 and the interface of the main body 110 in a cross-section obtained by cutting the main body 110 in the width-thickness direction. The margin portions 114 and 115 can essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress. The margin portions 114 and 115 may include the same or different materials as the dielectric layer 111. For example, the margin portions 114 and 115 may be formed by forming the internal electrodes by applying a conductive paste to a ceramic green sheet, except where the margin portions are formed. Alternatively, in order to suppress the step caused by the internal electrodes 121 and 122, the internal electrodes 121 and 122 after lamination can be cut so that they are exposed on the fifth surface 5 and sixth surface 6 of the main body 110, and then a single dielectric layer or two or more dielectric layers can be laminated on both sides in the width direction of the active portion Ac to form margin portions 114 and 115.

[0039] The internal electrodes 121 and 122 can be stacked alternately with the dielectric layer 111. The internal electrodes 121 and 122 can include a plurality of first internal electrodes 121 and second internal electrodes 122. The plurality of first internal electrodes 121 and the plurality of second internal electrodes 122 can be arranged alternately facing each other with the dielectric layer 111 in between, and can be exposed on the third surface 3 and the fourth surface 4 of the main body 110, respectively. For example, each of the plurality of first internal electrodes 121 can be separated from the fourth surface 4 and exposed via the third surface 3. Similarly, each of the plurality of second internal electrodes 122 can be separated from the third surface 3 and exposed via the fourth surface 4. The plurality of first internal electrodes 121 and second internal electrodes 122 can be electrically isolated from each other by the dielectric layer 111 placed between them.

[0040] The internal electrodes 121 and 122 can be formed from a conductive paste containing a conductive metal. For example, the conductive paste can be printed onto a ceramic green sheet forming the dielectric layer 111 by a printing method such as screen printing or gravure printing, thereby printing the internal electrodes 121 and 122. By alternately stacking the ceramic green sheets on which the internal electrodes 121 and 122 are printed and firing them, the active part Ac of the main body 110 can be formed. The conductive metal is not limited to, but may include nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and / or alloys containing these.

[0041] While the thickness te of the internal electrodes 121 and 122 is not particularly limited, generally, when the internal electrodes 121 and 122 are formed thinly with a thickness of less than 0.6 μm, reliability may decrease, especially when the thickness of the internal electrodes 121 and 122 is 0.4 μm or less. On the other hand, in this disclosure, excellent reliability can be ensured even when the thickness of the internal electrodes 121 and 122 is 0.4 μm or less, as described above. Therefore, when the thickness of the internal electrodes 121 and 122 is 0.4 μm or less, the effect of reliability improvement by this disclosure can be made more pronounced, and miniaturization and high capacitance of ceramic electronic components can be achieved more easily.

[0042] The thickness te of the internal electrodes 121 and 122 can represent the average thickness of the internal electrodes 121 and 122. The average thickness of the internal electrodes 121 and 122 can be measured by scanning an image of the cross-section of the main body 110 in the length and thickness directions using a scanning electron microscope at 10,000x magnification. More specifically, the thickness of one internal electrode can be measured at 30 equally spaced points in the length direction of the scanned image, and the average value can be measured. The 30 equally spaced points can be designated as the active area Ac. Furthermore, by extending this average value measurement to 10 internal electrodes and measuring the average value, the average thickness of the internal electrodes can be further generalized.

[0043] External electrodes 131 and 132 are positioned on the third and fourth surfaces 3 and 4 of the main body 110, and can be partially extended to the first surface 1, second surface 2, fifth surface 5, and sixth surface 6, respectively. External electrodes 131 and 132 may include first external electrodes 131 and second external electrodes 132 connected to a plurality of first internal electrodes 121 and second internal electrodes 122, respectively. The first external electrode 131 is positioned on the third surface 3 of the main body 110, and can be partially extended to the first surface 1, second surface 2, fifth surface 5, and sixth surface 6 of the main body 110, respectively. The second external electrode 132 is positioned on the fourth surface 4 of the main body 110, and can be partially extended to the first surface 1, second surface 2, fifth surface 5, and sixth surface 6 of the main body 110, respectively. The drawing illustrates a structure in which the ceramic electronic component 100 has two external electrodes 131 and 132. However, the number and shape of the external electrodes 131 and 132 can be changed depending on the form of the internal electrodes 121 and 122 or other purposes.

[0044] The external electrodes 131 and 132 can be formed using any material that has electrical conductivity, such as metal, and the specific material can be determined considering electrical properties, structural stability, etc. Furthermore, they can have a multilayer structure. For example, the external electrodes 131 and 132 may include electrode layers 131a and 132a placed on the main body 110 and plating layers 131b and 132b formed on the electrode layers 131a and 132a.

[0045] The electrode layers 131a and 132a can be, for example, firing electrodes containing a conductive metal and glass, or resin-based electrodes containing a conductive metal and resin. Alternatively, the electrode layers 131a and 132a can be formed by sequentially forming the firing electrode and resin-based electrode on the main body 110. Furthermore, the electrode layers 131a and 132a can be formed by transferring a sheet containing a conductive metal onto the main body 110, or by transferring a sheet containing a conductive metal onto the firing electrode. The conductive metal included in the electrode layers 131a and 132a can be a material with excellent electrical conductivity and is not particularly limited. For example, the conductive metal can include copper (Cu), nickel (Ni), palladium (Pd), platinum (Pt), gold (Au), silver (Ag), lead (Pb), and / or alloys containing these.

[0046] The plating layers 131b and 132b play a role in improving mounting characteristics. The type of plating layers 131b and 132b is not particularly limited and can be plating layers containing nickel (Ni), tin (Sn), palladium (Pd), and / or alloys containing these, and can be formed in multiple layers. The plating layers 131b and 132b can be, for example, nickel (Ni) plating layers or tin (Sn) plating layers, and can be in a form in which nickel (Ni) plating layers and tin (Sn) plating layers are sequentially formed on electrode layers 131a and 132a. In addition, the plating layers 131b and 132b can also contain multiple nickel (Ni) plating layers and / or multiple tin (Sn) plating layers.

[0047] The size of the ceramic electronic component 100 is not particularly limited. However, in order to achieve miniaturization and high capacitance simultaneously, it is necessary to reduce the thickness of the dielectric layer 111 and the internal electrodes 121 and 122 and increase the number of layers. Therefore, the reliability effect of this disclosure can be more pronounced in ceramic electronic components 100 having a size of 1005 (length × width, 1.0 mm × 0.5 mm) or less. Accordingly, considering manufacturing tolerances, the size of the external electrodes 131 and 132, the reliability improvement effect can be more pronounced when the length of the ceramic electronic component 100 is 1.1 mm or less and the width is 0.55 mm or less. Here, the length of the ceramic electronic component 100 refers to its size in the length direction, and the width of the ceramic electronic component 100 refers to its size in the width direction.

[0048] Experimental example A dielectric composition was prepared, primarily containing a barium titanate-based matrix and containing minor components such as rare earth elements. Then, a conductive paste for internal electrodes containing nickel (Ni) was applied to a ceramic green sheet containing the dielectric composition to form an internal electrode pattern. Subsequently, the ceramic green sheets with the formed internal electrode patterns were stacked, and the resulting laminate was cut into chip units and then fired to produce sample chips.

[0049] On the other hand, each sample contained each component in the amounts shown in [Table 1] below (unit: moles) per 100 moles of barium titanate base material. In each sample chip, the thickness of the dielectric layer and internal electrodes was 0.4 μm or less, and the chip size was 1005 size or less. In the central dielectric layer of each sample chip, the grain size was 600 nm or less, and lanthanum-based elements were further present within the dielectric grain boundary, while elements such as silicon (Si), magnesium (Mg), and tin (Sn) were present within the dielectric grains.

[0050] On the other hand, the composition of the dielectric layer in [Table 1] below was measured by the TEM-EDS elemental analysis described above. Specifically, after FIB sampling for TEM analysis of the sample chip, the types and amounts of elements contained were measured via TEM-EDS mapping. After this, in order to determine the proportion of the analyzed elements that correspond to the base material, such as barium titanate, the analytical ratio of the element in question was divided by the analytical ratio of titanium (Ti) to determine whether the element was present in a few mole percent of the base material.

[0051] Furthermore, the reliability in [Table 1] below was measured using a high-temperature insulation resistance meter. Under conditions corresponding to the product's rated voltage*1.5 and rated temperature +20°C (for example, for the X5R, 6.3V target model, conditions of approximately 105°C and 9.45V), the failure rate after 24 hours of voltage application was measured. A failure rate of 10% or less was indicated as good reliability (○), and anything higher was indicated as unreliable reliability (×). On the other hand, if the final insulation resistance was confirmed to be 10^4Ω or less after 24 hours of evaluation, it was indicated as unreliable reliability (×) regardless of the failure rate.

[0052] [Table 1]

[0053] Referring to [Table 1], it can be seen that when the dysprosium (Dy) content is insufficient or excessive, as in sample tips 1-3, 6-7, and 23-24, the reliability characteristics are reduced when the molar ratios of Sn / Dy and Sn / RE do not meet the range proposed in this disclosure.

[0054] Furthermore, as seen in sample tips 9-10, when tin (Sn) is insufficient and the molar ratios of Sn / Dy and Sn / RE do not meet the range proposed in this disclosure, the reliability characteristics deteriorate due to the solid solution instability of rare earth elements.

[0055] Furthermore, as seen in sample chips 11-12, if there is an excess of tin (Sn) and the molar ratios of Sn / Dy and Sn / RE do not meet the range proposed in this disclosure, the firing temperature increases, the IR split increases, and the reliability characteristics deteriorate.

[0056] On the other hand, as seen in sample tips 4-5, 8, 21, 25-26, and 30, when the molar ratios of Sn / Dy and Sn / RE do not meet the range proposed in this disclosure, it can be seen that the reliability is superior.

[0057] Furthermore, when adding lanthanum-based rare earth elements (REs) as in sample tips 13-20, 22, and 27-29 to satisfy the composition proposed in this disclosure, it can be seen that reliability characteristics are further improved by introducing elements to increase the substitution efficiency of the A-site.

[0058] In this disclosure, multilayer ceramic capacitors have been used as an example of ceramic electronic components, but the disclosure is not limited to them and can be applied to other types of ceramic electronic components, such as inductors, piezoelectric elements, varistors, thermistors, and the like.

[0059] In this disclosure, for convenience, terms such as "side" and "side" are used to mean the left / right direction or the surface in that direction relative to the drawing; for convenience, terms such as "up" and "top" are used to mean the upward direction or the surface in that direction relative to the drawing; and for convenience, terms such as "down" and "bottom" are used to mean the downward direction or the surface in that direction. Furthermore, the terms "side," "up," "top," "down," or "bottom" are used to include not only cases where the component in question is in direct contact with the reference component in the relevant direction, but also cases where it is located in the relevant direction but does not directly contact it. However, this is a definition of direction for explanatory purposes only, and the scope of the claims is not particularly limited by such descriptions of direction, and concepts such as "up" and "down" can change at any time.

[0060] In this disclosure, "connected" includes not only direct connection but also indirect connection via an adhesive layer or the like. Furthermore, "electrically connected" includes both physically connected and non-connected cases. The terms "first," "second," etc., are used to distinguish one component from another and do not limit the order and / or importance of the components. In some cases, without exceeding the scope of the rights, the first component may be named the second component, and similarly, the second component may be named the first component.

[0061] The expression "example" as used in this disclosure does not mean that each embodiment is identical to another, but is provided to highlight and illustrate the unique and distinct features of each. However, the examples presented above do not preclude their implementation in combination with features of other examples. For example, even if a matter described in one example is not described in another example, it can be understood as a description related to the other example, unless there is a description in the other example that contradicts or is inconsistent with that description.

[0062] The terms used in this disclosure are for illustrative purposes only and are not intended to limit the disclosure. Where otherwise, singular expressions include plural expressions unless the context clearly indicates otherwise. The following items will also be disclosed. [Item 1] A main body including a dielectric layer and internal electrodes, The body includes an external electrode that is arranged on the main body and connected to the internal electrode, At least a portion of the dielectric layer contains lanthanum-based rare earth elements (RE) including tin (Sn) and dysprosium (Dy), A ceramic electronic component in which, in at least a portion of the dielectric layer, the molar ratio (Sn / Dy) of tin (Sn) to dysprosium (Dy) is 0.15 to 0.30. [Item 2] The ceramic electronic component according to item 1, wherein in at least a portion of the dielectric layer, the molar ratio (Sn / RE) of tin (Sn) to the lanthanum-based rare earth element (RE) is 0.15 to 0.25. [Item 3] The dielectric layer comprises a barium titanate-based material as the main component, as described in item 1 or 2. [Item 4] The ceramic electronic component according to item 3, wherein in at least a portion of the dielectric layer, the tin (Sn) content is 0.05 moles to 0.16 moles and the dysprosium (Dy) content is 0.20 moles to 0.80 moles per 100 moles of the barium titanate-based material. [Item 5] The lanthanum-based rare earth element (RE) further comprises dysprosium (Dy) and at least one of terbium (Tb), samarium (Sm), and gadolinium (Gd), as described in any one of items 1 to 4. [Item 6] The ceramic electronic component according to item 5, wherein at least a portion of the dielectric layer further comprises an acceptor element (AT) including at least one of manganese (Mn), aluminum (Al), vanadium (V), and magnesium (Mg). [Item 7] The ceramic electronic component according to item 6, wherein at least a portion of the dielectric layer further comprises a donor element (DN) including at least one of the lanthanum-based rare earth element (RE), niobium (Nb), and yttrium (Y). [Item 8] The ceramic electronic component according to item 7, wherein in at least a portion of the dielectric layer, the molar ratio (DN / AT) of the donor element (DN) to the acceptor element (AT) is 0.01 to 0.50. [Item 9] The main body includes an active portion in which a capacitance is formed, which includes a plurality of internal electrodes arranged facing each other with the dielectric layer in between. A ceramic electronic component according to any one of items 1 to 8, wherein at least a portion of the dielectric layer is disposed within the active portion. [Item 10] The external electrodes include first and second external electrodes, which are respectively positioned at both ends in the longitudinal direction of the main body. The ceramic electronic component according to any one of items 1 to 9, wherein the internal electrodes include a plurality of first and second internal electrodes that are alternately stacked in the thickness direction of the main body and connected to the first and second external electrodes, respectively. [Item 11] The dielectric layer has a thickness of 0.4 μm or less. The ceramic electronic component described in any one of items 1 to 10, wherein the internal electrode has a thickness of 0.4 μm or less.

Claims

1. A main body including a dielectric layer and internal electrodes, The body includes an external electrode that is arranged on the main body and connected to the internal electrode, The dielectric layer mainly contains a barium titanate-based material, At least a portion of the dielectric layer contains lanthanum-based rare earth elements (RE) including tin (Sn), dysprosium (Dy), and samarium (Sm). In at least a portion of the dielectric layer, the molar ratio (Sn / Dy) of tin (Sn) to dysprosium (Dy) is 0.15 to 0.

30. Ceramic electronic components.

2. The ceramic electronic component according to claim 1, wherein in at least a portion of the dielectric layer, the molar ratio (Sn / RE) of tin (Sn) to the lanthanum-based rare earth element (RE) is 0.15 to 0.

25.

3. The ceramic electronic component according to claim 1, wherein in at least a portion of the dielectric layer, the tin (Sn) content is 0.05 moles to 0.16 moles and the dysprosium (Dy) content is 0.20 moles to 0.80 moles per 100 moles of the barium titanate-based material.

4. The ceramic electronic component according to any one of claims 1 to 3, wherein the lanthanum-based rare earth element (RE) further comprises at least one of terbium (Tb) and gadolinium (Gd), in addition to dysprosium (Dy) and samarium (Sm).

5. The ceramic electronic component according to claim 4, wherein at least a portion of the dielectric layer further comprises an acceptor element (AT) including at least one of manganese (Mn), aluminum (Al), vanadium (V), and magnesium (Mg).

6. The ceramic electronic component according to claim 5, wherein at least a portion of the dielectric layer further comprises a donor element (DN) including at least one of the lanthanum-based rare earth element (RE), niobium (Nb), and yttrium (Y).

7. The ceramic electronic component according to claim 6, wherein in at least a portion of the dielectric layer, the molar ratio (DN / AT) of the donor element (DN) to the acceptor element (AT) is 0.01 to 0.

50.

8. The main body includes an active portion in which a capacitance is formed, which includes a plurality of internal electrodes arranged facing each other with the dielectric layer in between. The ceramic electronic component according to any one of claims 1 to 7, wherein at least a portion of the dielectric layer is disposed within the active portion.

9. The external electrodes include first and second external electrodes, which are respectively positioned at both ends in the longitudinal direction of the main body. The ceramic electronic component according to any one of claims 1 to 8, wherein the internal electrodes include a plurality of first and second internal electrodes that are alternately stacked in the thickness direction of the main body and connected to the first and second external electrodes, respectively.

10. The dielectric layer has a thickness of 0.4 μm or less. The ceramic electronic component according to any one of claims 1 to 9, wherein the internal electrode has a thickness of 0.4 μm or less.

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