Wiring structure
The multilayer wiring structure addresses thermal expansion issues by using inorganic films with lower dielectric constants and barrier conductive layers to prevent voids and capacitance, improving reliability and performance in high-density applications.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- DAI NIPPON PRINTING CO LTD
- Filing Date
- 2026-04-23
- Publication Date
- 2026-07-07
AI Technical Summary
Multilayer wiring structures face issues such as disconnection at connection holes due to thermal expansion coefficient mismatch between organic resin and copper, leading to voids, increased parasitic capacitance, crosstalk, and signal propagation delay, especially in high-density applications.
A multilayer wiring structure using an inorganic material film with a lower dielectric constant than organic resin, combined with a barrier conductive layer, to reduce thermal stress and prevent copper diffusion, thereby minimizing voids and capacitance while maintaining electrical integrity.
The proposed structure effectively reduces wire breakage, parasitic capacitance, and signal delay, enhancing reliability and performance in high-density wiring layers by mitigating thermal stress and copper diffusion.
Smart Images
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