Magnetoresistive effect probe and magnetic sensor

Abstract

This reduces fluctuations in the detection signal that occur after a magnetic shock. [Solution] The MR element 50 comprises a magnetization fixed layer 51 having a magnetization 51m with a fixed direction, a free layer 53 that can have a magnetic vortex structure and is configured so that the center 53c of the magnetic vortex structure moves according to the target magnetic field MF, and a gap layer 52 disposed between the magnetization fixed layer 51 and the free layer 53. The magnetization fixed layer 51 includes a first region A1 and a second region A2 in which the direction of the magnetization 51m is less orderly than that of the first region A1. The free layer 53 is arranged such that the area of ​​the overlapping portion where the free layer 53 and the first region A1 overlap each other when viewed from the stacking direction of the magnetization fixed layer 51, the gap layer 52, and the free layer 53 is larger than the area of ​​the overlapping portion where the free layer 53 and the second region A2 overlap each other when viewed from the stacking direction.

Description

Technical Field

[0001] The present disclosure relates to a magnetoresistive element including a free layer configured to have a magnetic vortex structure, and a magnetic sensor including the magnetoresistive element.

Background Art

[0002] In recent years, magnetic sensors have been used in various applications. As a magnetic sensor, one using a spin valve type magnetoresistive element is known. The spin valve type magnetoresistive element includes a magnetization fixed layer having a magnetization with a fixed direction, a free layer having a magnetization whose direction can change according to the direction of a target magnetic field, and a gap layer disposed between the magnetization fixed layer and the free layer.

[0003] As a free layer used in a magnetoresistive element, one configured to be able to have a magnetic vortex structure (also referred to as a vortex structure) is known. For example, Patent Documents 1 to 3 disclose a magnetoresistive element including a disk-shaped free layer configured to be able to have a magnetic vortex structure. In a magnetoresistive element including a free layer having a magnetic vortex structure as described in Patent Documents 1 to 3, the center of the magnetic vortex structure moves according to the magnetic field to be detected, and thereby the resistance value of the magnetoresistive element changes.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0005] Because magnetic sensors can be used in a variety of environments, magnetoresistive elements may be temporarily subjected to strong magnetic fields that are not the target magnetic field. Hereafter, this phenomenon of a strong magnetic field being temporarily applied that is not the target magnetic field will be referred to as magnetic shock (Mag shock). When a magnetoresistive element is subjected to magnetic shock, the direction of magnetization in the magnetized fixed layer may change from its state before the magnetic shock. In addition, when a magnetoresistive element is subjected to magnetic shock, the magnetic vortex structure in the free layer may temporarily disappear. As a result, the detection signal generated by the magnetoresistive element may deviate from a predetermined value, and the desired characteristics may not be obtained.

[0006] This disclosure has been made in view of the aforementioned problems, and its purpose is to provide a magnetoresistive element including a free layer having a magnetic vortex structure that can reduce fluctuations in the detection signal that occur after receiving a magnetic shock, and a magnetic sensor equipped with this magnetoresistive element. [Means for solving the problem]

[0007] The magnetoresistive element of this disclosure comprises a magnetization-fixed layer having magnetization with a fixed direction, a free layer that can have a magnetic vortex structure and is configured so that the center of the magnetic vortex structure moves in accordance with the target magnetic field, and a gap layer disposed between the magnetization-fixed layer and the free layer. The magnetization-fixed layer includes a first region and a second region in which the direction of magnetization is less orderly than that of the first region. The free layer is arranged such that the area of ​​the overlapping portion where the free layer and the first region overlap each other when viewed from the stacking direction of the magnetization-fixed layer, the gap layer, and the free layer is greater than the area of ​​the overlapping portion where the free layer and the second region overlap each other when viewed from the stacking direction.

[0008] A magnetic sensor according to a first aspect of the present disclosure comprises a power port, a ground port, an output port, a first resistive section disposed between the power port and the output port, and a second resistive section disposed between the ground port and the output port. Each of the first resistive section and the second resistive section includes a plurality of magnetic sensing elements. Each of the plurality of magnetic sensing elements is a magnetoresistive element of the present disclosure.

[0009] A magnetic sensor according to a second aspect of the present disclosure is configured to detect a target magnetic field and generate at least one detection signal. The magnetic sensor comprises a power port, a ground port, an output port, a first resistive section located between the power port and the output port, and a second resistive section located between the ground port and the output port. Each of the first and second resistive sections includes a plurality of magnetoresistive elements. Each of the plurality of magnetoresistive elements comprises a magnetization-fixed layer having magnetization with a fixed direction, a free layer that may have a magnetic vortex structure and is configured such that the center of the magnetic vortex structure moves in response to the target magnetic field, and a gap layer located between the magnetization-fixed layer and the free layer. The planar shape of the magnetization-fixed layer is larger than the planar shape of the free layer. At least one detection signal corresponds to the potential of the output port and has a predetermined value when the strength of the target magnetic field is zero. Each of the multiple magnetoresistive elements is configured such that the difference between a predetermined value before a strong magnetic field (not the target magnetic field) is temporarily applied to the magnetic sensor and a predetermined value after the strong magnetic field is temporarily applied is smaller than the difference that would occur if the planar shape of the magnetized fixed layer were the same as the planar shape of the free layer. [Effects of the Invention]

[0010] In the magnetoresistive element and the magnetic sensor of the first embodiment of the present disclosure, the free layer is arranged such that the area of ​​the overlapping portion where the free layer and the first region overlap is larger than the area of ​​the overlapping portion where the free layer and the second region overlap. This provides the effect that, according to the present disclosure, it is possible to realize a magnetoresistive element and a magnetic sensor that can reduce fluctuations in the detection signal that occur after receiving a magnetic shock.

[0011] In the magnetic sensor of the second aspect of this disclosure, the planar shape of the magnetized fixed layer is larger than the planar shape of the free layer. Each of the multiple magnetoresistive elements is configured such that the difference between a predetermined value before a strong magnetic field that is not the target magnetic field is temporarily applied to the magnetic sensor and a predetermined value after the strong magnetic field is temporarily applied is smaller than the difference that would occur if the planar shape of the magnetized fixed layer were the same as the planar shape of the free layer. As a result, according to this disclosure, it is possible to realize a magnetic sensor that can reduce fluctuations in the detection signal that occur after a magnetic shock. [Brief explanation of the drawing]

[0012] [Figure 1] This is a plan view showing a magnetic sensor according to the first embodiment of the present disclosure. [Figure 2] This is a circuit diagram showing the circuit configuration of a magnetic sensor according to the first embodiment of this disclosure. [Figure 3] This is a plan view showing a part of a magnetic sensor according to the first embodiment of the present disclosure. [Figure 4] This is a plan view showing a magnetoresistive element according to the first embodiment of the present disclosure. [Figure 5] This is a cross-sectional view showing a magnetoresistive element according to the first embodiment of the present disclosure. [Figure 6] This is an explanatory diagram showing the direction of magnetization of the free layer of a magnetoresistive element according to the first embodiment of this disclosure. [Figure 7] This is an explanatory diagram showing the direction of magnetization of the free layer when a target magnetic field is applied to a magnetoresistive element according to the first embodiment of this disclosure. [Figure 8] This is an explanatory diagram showing the direction of magnetization of the free layer when a target magnetic field is applied to a magnetoresistive element according to the first embodiment of this disclosure. [Figure 9] This is an explanatory diagram showing the relationship between the intensity of the magnetic field component and the magnitude of the magnetization of the entire free layer in the first embodiment of this disclosure. [Figure 10]It is an explanatory diagram showing the direction of magnetization of the magnetization fixing layer of the magnetoresistive element according to the first embodiment of the present disclosure. [Figure 11] It is an explanatory diagram showing the direction of magnetization of the magnetization fixing layer after a strong magnetic field that is not the target magnetic field is temporarily applied to the magnetoresistive element according to the first embodiment of the present disclosure. [Figure 12] It is a cross-sectional view showing a magnetoresistive element of a comparative example. [Figure 13] It is a perspective view showing a magnetoresistive element according to the second embodiment of the present disclosure. [Figure 14] It is a plan view showing a magnetoresistive element according to the second embodiment of the present disclosure. [Figure 15] It is a cross-sectional view showing a magnetoresistive element according to the third embodiment of the present disclosure. [Figure 16] It is a cross-sectional view showing a magnetoresistive element according to the fourth embodiment of the present disclosure. [Figure 17] It is a plan view showing a first example of the planar shape of the magnetization fixing layer in the fourth embodiment of the present disclosure. [Figure 18] It is a plan view showing a second example of the planar shape of the magnetization fixing layer in the fourth embodiment of the present disclosure. [Figure 19] It is a cross-sectional view showing a magnetoresistive element according to the fifth embodiment of the present disclosure. [Figure 20] It is a cross-sectional view showing a magnetoresistive element according to the sixth embodiment of the present disclosure. [Figure 21] It is a cross-sectional view showing a magnetoresistive element according to the seventh embodiment of the present disclosure. [Figure 22] It is a plan view showing a magnetoresistive element according to the seventh embodiment of the present disclosure. [Figure 23] It is a cross-sectional view showing a magnetoresistive element according to the eighth embodiment of the present disclosure. [Figure 24] It is a cross-sectional view showing a magnetoresistive element according to the ninth embodiment of the present disclosure. [Figure 25] It is a cross-sectional view showing a magnetoresistive element according to the tenth embodiment of the present disclosure. [Figure 26]This is a cross-sectional view showing a magnetoresistive element according to the eleventh embodiment of the present disclosure. [Figure 27] This is a cross-sectional view showing a magnetoresistive element according to the twelfth embodiment of the present disclosure. [Modes for carrying out the invention]

[0013] [First Embodiment] The embodiments of this disclosure will now be described in detail with reference to the drawings. First, the general configuration of the magnetic sensor according to the first embodiment of this disclosure will be described with reference to Figures 1 and 2. Figure 1 is a plan view showing the magnetic sensor according to this embodiment. Figure 2 is a circuit diagram showing the circuit configuration of the magnetic sensor according to this embodiment.

[0014] The magnetic sensor 1 according to this embodiment is configured to detect a target magnetic field MF and generate at least one detection signal. The magnetic sensor 1 includes a power port 11, a ground port 12, a first output port 13, a second output port 14, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, and a circuit board 10. Multiple terminals corresponding to the first to fourth resistors R1 to R4, the power port 11, the ground port 12, and the first and second output ports 13 and 14 are provided on the circuit board 10.

[0015] Each of the first to fourth resistive sections R1 to R4 includes multiple magnetic detection elements and is configured to detect a target magnetic field MF and generate at least one detection signal. In this embodiment, in particular, the multiple magnetic detection elements are multiple magnetoresistive elements (hereinafter referred to as MR elements) 50. Since each of the first to fourth resistive sections R1 to R4 includes multiple MR elements 50, it can also be said that the magnetic sensor 1 is equipped with multiple MR elements 50.

[0016] As shown in Figure 2, the first resistor R1 is located between the power port 11 and the first output port 13 in the circuit configuration. The second resistor R2 is located between the ground port 12 and the first output port 13 in the circuit configuration. The third resistor R3 is located between the ground port 12 and the second output port 14 in the circuit configuration. The fourth resistor R4 is located between the power port 11 and the second output port 14 in the circuit configuration. In this application, the expression "in the circuit configuration" refers to the arrangement on the circuit diagram, not the arrangement in the physical configuration.

[0017] A predetermined voltage or current is applied to the power port 11. The ground port 12 is connected to ground.

[0018] Here, as shown in Figure 1, we define the X, Y, and Z directions. The X, Y, and Z directions are orthogonal to each other. Furthermore, the direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. In this embodiment, in particular, the direction perpendicular to the surface of the substrate 10 is defined as the Z direction.

[0019] Furthermore, below, a position located at the end of the Z-direction relative to a certain reference position will be referred to as "above," and a position opposite to "above" relative to a certain reference position will be referred to as "below." Also, with respect to the components of magnetic sensor 1, the surface located at the end in the Z-direction will be referred to as the "top surface," and the surface located at the end in the -Z-direction will be referred to as the "bottom surface." In addition, the expression "when viewed from a predetermined direction (for example, the Z-direction)" means viewing the object from a position at a distance in a predetermined direction or a direction parallel to the predetermined direction.

[0020] Figure 1 shows an example of the arrangement of the first to fourth resistors R1 to R4. In this example, the first and second resistors R1 and R2 are aligned parallel to the X direction. The second resistor R2 is positioned ahead of the first resistor R1 in the X direction.

[0021] The third and fourth resistors R3 and R4 are aligned parallel to the X direction. The fourth resistor R4 is positioned ahead of the third resistor R3 in the -X direction. The third resistor R3 is positioned ahead of the second resistor R2 in the -Y direction. The fourth resistor R4 is positioned ahead of the first resistor R1 in the -Y direction.

[0022] Note that the arrangement of the first to fourth resistors R1 to R4 is not limited to the example shown in Figure 1. For example, the first to fourth resistors R1 to R4 may be arranged in a predetermined order in a direction parallel to the X direction or parallel to the Y direction.

[0023] Next, with reference to Figure 3, the specific structure of the magnetic sensor 1 will be described in detail. Figure 3 is a plan view showing a part of the magnetic sensor 1.

[0024] Each of the first to fourth resistive sections R1 to R4 further includes a plurality of lower electrodes 41 and a plurality of upper electrodes 42. The plurality of lower electrodes 41 are arranged on a substrate 10 (see Figure 1). The plurality of MR elements 50 are arranged on the plurality of lower electrodes 41. The plurality of upper electrodes 42 are arranged on the plurality of MR elements 50. The plurality of lower electrodes 41 and the plurality of upper electrodes 42 are made of a conductive material such as Cu.

[0025] Multiple MR elements 50 may be connected in series by multiple lower electrodes 41 and multiple upper electrodes 42. In this case, the method of connecting the multiple MR elements 50 is as follows. As shown in Figure 3, each lower electrode 41 has an elongated shape. A gap is formed between two lower electrodes 41 that are adjacent in the longitudinal direction of the lower electrode 41. On the upper surface of the lower electrode 41, MR elements 50 are arranged near both ends in the longitudinal direction. Each upper electrode 42 also has an elongated shape and is arranged on two lower electrodes 41 that are adjacent in the longitudinal direction of the lower electrode 41, electrically connecting two adjacent MR elements 50. This connects multiple MR elements 50 in series.

[0026] Next, the configuration of the MR element 50 will be described with reference to Figures 4 to 6. Figure 4 is a plan view showing the MR element 50. Figure 5 is a cross-sectional view showing the MR element 50. Figure 6 is an explanatory diagram showing the direction of magnetization of the free layer of the MR element 50.

[0027] The MR element 50 comprises a magnetization-fixed layer 51 having a magnetization 51m with a fixed direction, a free layer 53, and a gap layer 52 disposed between the magnetization-fixed layer 51 and the free layer 53. The free layer 53 is selected for its material and shape so that it may have a magnetic vortex structure (also called a vortex structure). The gap layer 52 is a tunnel barrier layer or a non-magnetic conductive layer. The MR element 50 may further include a cap layer (not shown) disposed on top of the free layer 53.

[0028] In this embodiment, the magnetization fixed layer 51 is positioned on the lower electrode 41. The upper electrode 42 is positioned on the free layer 53.

[0029] At least a portion of the free layer 53 has a frustoconical or nearly frustoconical shape. In the example shown in Figure 5, the entire free layer 53 and the gap layer 52 combined have a frustoconical or nearly frustoconical shape.

[0030] As shown in Figure 5, the free layer 53 has a lower surface 53a and an upper surface 53b located at both ends in the direction parallel to the Z direction, i.e., the stacking direction of the magnetized fixed layer 51, gap layer 52, and free layer 53, and a side surface 53d connecting the lower surface 53a and the upper surface 53b. The lower surface 53a is located at the -Z end of the free layer 53 and faces the magnetized fixed layer 51. The upper surface 53b is the surface opposite to the lower surface 53a and is located at the Z end of the free layer 53.

[0031] The side surface 53d may include an inclined portion that is inclined with respect to the stacking direction. The side surface 53d may further include a portion that is parallel or nearly parallel to the Z direction. In the example shown in Figure 5, the entire or nearly entire side surface 53d corresponds to the inclined portion. The side surface 53d may be planar or curved. The planar shape of the side surface 53d when viewed from one direction parallel to the stacking direction, i.e., the Z direction, is annular. The planar shapes of the bottom surface 53a and the top surface 53b are circular or nearly circular, respectively. The planar shape of the top surface 53b is smaller than the planar shape of the bottom surface 53a.

[0032] In Figure 5, the symbol C1 indicates the centroid of the free layer 53 when viewed from the direction parallel to the Z direction, i.e., the stacking direction (the centroid of the planar shape of the free layer 53). The centroid C1 of the free layer 53 may coincide with the centroid of the bottom surface 53a of the free layer 53 when viewed from the stacking direction. In Figure 5, for convenience, the centroid of the bottom surface 53a of the free layer 53 is used as the centroid C1 of the free layer 53.

[0033] The gap layer 52 has a bottom surface and an top surface located at both ends in a direction parallel to the Z direction, i.e., the stacking direction, and a side surface connecting the bottom surface and the top surface. The bottom surface of the gap layer 52 is located at the -Z end of the gap layer 52 and faces the magnetization fixed layer 51. The top surface of the gap layer 52 is the surface opposite to the bottom surface and faces the free layer 53. The side surface of the gap layer 52 may be continuous with the side surface 53d of the free layer 53. In this case, the side surface of the gap layer 52 may be inclined with respect to the stacking direction.

[0034] The magnetized fixed layer 51 has a lower surface 51a and an upper surface 51b located at both ends in the stacking direction. The upper surface 51b is located at the Z-direction end of the magnetized fixed layer 51 and faces the free layer 53. The lower surface 51a is the surface opposite to the upper surface 51b and is located at the -Z-direction end of the magnetized fixed layer 51.

[0035] The magnetized fixed layer 51 further has a side surface that connects the lower surface 51a and the upper surface 51b. The side surface of the magnetized fixed layer 51 is not continuous with the side surface of the gap layer 52. The side surface of the magnetized fixed layer 51 may or may not be inclined with respect to the stacking direction.

[0036] The planar shape of the magnetized fixed layer 51 is larger than the planar shape of the free layer 53. Here, as shown in Figure 5, the spacings D1, D2, and D3 are defined as follows. Figure 5 shows a cross-section of the MR element 50 in a cross-section that intersects the magnetized fixed layer 51 and the free layer 53 and is parallel to the stacking direction. Spacings D1 to D3 are the spacings in the above cross-section. Spacing D1 is the spacing between the outer edge of the lower surface 51a of the magnetized fixed layer 51 and the outer edge of the upper surface 53b of the free layer 53 in a direction perpendicular to the stacking direction. Spacing D2 is the spacing between the outer edge of the lower surface 51a of the magnetized fixed layer 51 and the outer edge of the lower surface 53a of the free layer 53 in a direction perpendicular to the stacking direction. Spacing D3 is the spacing between the outer edge of the lower surface 53a of the free layer 53 and the outer edge of the upper surface 53b of the free layer 53 in a direction perpendicular to the stacking direction. Spacing D1 may be larger than spacing D2. Also, spacing D2 may be larger than spacing D3.

[0037] The magnetized fixed layer 51 includes a first portion 51A and a second portion 51B located on both sides of the free layer 53 in a direction perpendicular to the stacking direction. In this embodiment in particular, the first portion 51A and the second portion 51B are located on both sides of the free layer 53 in any direction perpendicular to the stacking direction. The dimensions of the first portion 51A and the dimensions of the second portion 51B in the stacking direction may be the same.

[0038] In Figure 5, the symbol PL represents a virtual plane passing through the centroid C1 of the free layer 53 and parallel to the stacking direction. The magnetized fixed layer 51 may have a shape symmetrical with respect to the virtual plane PL.

[0039] The magnetization fixed layer 51 includes a first ferromagnetic layer 512 and a second ferromagnetic layer 514, both made of ferromagnetic material, and a non-magnetic layer 513 made of a non-magnetic material, disposed between the first ferromagnetic layer 512 and the second ferromagnetic layer 514. The second ferromagnetic layer 514 is disposed between the first ferromagnetic layer 512 and the free layer 53. The first ferromagnetic layer 512 and the second ferromagnetic layer 514 are formed of, for example, CoFe, CoFeB, and CoNiFe. The non-magnetic layer 513 is formed of, for example, Ru.

[0040] The magnetization-fixed layer 51 further includes an antiferromagnetic layer 511 made of an antiferromagnetic material. The antiferromagnetic layer 511 is positioned between the lower electrode 41 and the first ferromagnetic layer 512. The antiferromagnetic layer 511 is formed of, for example, IrMn.

[0041] The magnetization direction of the first ferromagnetic layer 512 is fixed by exchange coupling with the antiferromagnetic layer 511. The first ferromagnetic layer 512 and the second ferromagnetic layer 514 are antiferromagnetically coupled, and their magnetization directions are fixed in opposite directions. The non-magnetic layer 513 creates an antiferromagnetic exchange coupling between the first ferromagnetic layer 512 and the second ferromagnetic layer 514, fixing the magnetization directions of the first ferromagnetic layer 512 and the second ferromagnetic layer 514 in opposite directions. When the magnetization-fixing layer 51 includes the first ferromagnetic layer 512, the non-magnetic layer 513, and the second ferromagnetic layer 514, the magnetization direction of the magnetization-fixing layer 51 refers to the magnetization direction of the second ferromagnetic layer 514.

[0042] Figure 6 shows the direction of magnetization of the free layer 53 in an arbitrary cross-section parallel to the plane perpendicular to the stacking direction (XY plane). The free layer 53 has a magnetization 53m that is vortex-shaped around the center 53c of the magnetic vortex structure. When no magnetic field is applied to the MR element 50, the center 53c of the magnetic vortex structure coincides with or nearly coincides with the axis of the frustum of the cone.

[0043] The free layer 53 is configured such that the center 53c of the magnetic vortex structure can move in response to the target magnetic field MF. The center 53c of the magnetic vortex structure moves when a component of the target magnetic field MF perpendicular to the Z direction is applied to the free layer 53. It is preferable that the free layer 53 does not saturate within the range of change in the intensity of this component.

[0044] In this embodiment, the magnetization 51m of the magnetized fixed layer 51 includes a component in a direction parallel to the X direction. If the magnetization 51m of the magnetized fixed layer 51 includes a component in a specific direction, that component may be the main component of the magnetization 51m of the magnetized fixed layer 51. In this embodiment, if the magnetization 51m of the magnetized fixed layer 51 includes a component in a specific direction, the direction of the magnetization 51m of the magnetized fixed layer 51 will be a specific direction or approximately a specific direction.

[0045] Here, we will explain the resistance value of the MR element 50, taking the case where the direction of the magnetization 51m of the magnetized fixed layer 51 is the X direction as an example. Figures 7 and 8 show the free layer 53 when a magnetic field component MFx parallel to the X direction of the target magnetic field MF is applied to the free layer 53.

[0046] Figure 7 shows the free layer 53 when the direction of the magnetic field component MFx is in the X direction. In this case, the center 53c of the magnetic vortex structure moves due to the magnetic field component MFx, and the amount of magnetization 53m oriented in the X direction becomes greater than the amount of magnetization 53m oriented in the -X direction. In this case, the resistance value of the MR element 50 decreases.

[0047] Figure 8 shows the free layer 53 when the direction of the magnetic field component MFx is in the -X direction. In this case, the center 53c of the magnetic vortex structure moves due to the magnetic field component MFx, and the amount of magnetization 53m oriented in the -X direction becomes greater than the amount of magnetization 53m oriented in the X direction. In this case, the resistance value of the MR element 50 increases.

[0048] The change in the resistance of the MR element 50 depends on the strength of the magnetic field component MFx. When the direction of the magnetic field component MFx is in the X direction, as the strength of the magnetic field component MFx increases, the amount of magnetization 53m oriented in the X direction increases. The resistance of the MR element 50 decreases as the amount of magnetization 53m oriented in the X direction increases. Also, when the direction of the magnetic field component MFx is in the -X direction, as the strength of the magnetic field component MFx increases, the amount of magnetization 53m oriented in the -X direction increases. The resistance of the MR element 50 increases as the amount of magnetization 53m oriented in the -X direction increases. When the strength of the magnetic field component MFx increases, the resistance of the MR element 50 changes in a direction in which the amount of decrease or increase increases, respectively. When the strength of the magnetic field component MFx decreases, the resistance of the MR element 50 changes in a direction in which the amount of decrease or increase decreases, respectively. In this embodiment in particular, the relationship between the strength of the magnetic field component MFx and the resistance of the MR element 50 is linear or nearly linear, as long as the requirement that the free layer 53 does not saturate is met.

[0049] Next, with reference to Figure 9, the relationship between the intensity of the magnetic field component MFx and the magnitude of the magnetization of the free layer 53 will be explained. Figure 9 is a schematic diagram illustrating the relationship between the intensity of the magnetic field component MFx and the magnitude of the magnetization of the free layer 53. In Figure 9, the horizontal axis represents the intensity Hx of the magnetic field component MFx, and the vertical axis represents the magnitude Mx of the magnetization of the free layer 53. In Figure 9, the intensity Hx when the direction of the magnetic field component MFx is in the X direction is represented by a positive value, and the intensity Hx when the direction of the magnetic field component MFx is in the -X direction is represented by a negative value. When the direction of the magnetic field component MFx is in the X direction, as the amount of magnetization 53m directed in the X direction increases, the magnitude Mx of the magnetization of the free layer 53 increases. When the direction of the magnetic field component MFx is in the -X direction, as the amount of magnetization 53m directed in the -X direction increases, the magnitude Mx of the magnetization of the free layer 53 decreases.

[0050] First, let's explain the case where the intensity Hx is increased from 0. When the intensity Hx is gradually increased from 0, the magnitude of the magnetization Mx also gradually increases. When the intensity Hx reaches a value of Hx1 or greater, the magnetic vortex structure disappears and the magnitude of the magnetization Mx becomes constant, and the free layer 53 becomes magnetically saturated.

[0051] Next, we will explain the case where the intensity Hx is decreased from 0. When the intensity Hx is gradually decreased from 0, the magnitude of the magnetization Mx also gradually decreases. When the intensity Hx becomes less than or equal to Hx2, the magnetic vortex structure disappears and the magnitude of the magnetization Mx becomes constant, and the free layer 53 becomes magnetically saturated.

[0052] As shown in Figure 9, within a predetermined range where the intensity Hx is greater than value Hx2 and less than value Hx1, the magnitude of magnetization Mx changes linearly with respect to the change in intensity Hx. "Linearly changing" means that, in the characteristic diagram showing the relationship between intensity Hx and magnitude of magnetization Mx, the magnitude of magnetization Mx changes linearly or nearly linearly with respect to the change in intensity Hx.

[0053] In this embodiment, it is preferable that the free layer 53 does not become magnetically saturated within the range of change in intensity Hx, and it is more preferable that the magnitude of magnetization Mx changes linearly with respect to the change in intensity Hx.

[0054] Furthermore, if the intensity Hx becomes greater than the value Hx1 and the free layer 53 becomes magnetically saturated, and then the intensity Hx is decreased from a value Hx3 greater than Hx1, the magnitude of magnetization Mx hardly changes until it reaches a value Hx4 less than Hx1. When the intensity Hx becomes less than the value Hx4, a magnetic vortex structure is formed, and the magnitude of magnetization Mx changes linearly with respect to the change in intensity Hx, similar to when the intensity Hx is changed within a predetermined range greater than Hx2 and less than Hx1.

[0055] Similarly, if the intensity Hx is increased from a value Hx5 (which is less than Hx2) after the free layer 53 has become magnetically saturated when the intensity Hx is less than Hx2, the magnitude of magnetization Mx hardly changes until it reaches a value Hx6 (which is greater than Hx2). When the intensity Hx becomes greater than Hx6, a magnetic vortex structure is formed, and the magnitude of magnetization Mx changes linearly with respect to the change in intensity Hx, similar to when the intensity Hx is varied within a predetermined range greater than Hx2 and less than Hx1.

[0056] Although not shown in the diagram, the relationship between intensity Hx and the resistance of the MR element 50 is similar to the relationship between intensity Hx and the magnitude of the magnetization of the entire free layer 53.

[0057] Next, referring to Figure 2, the direction of magnetization 51m of the magnetization fixed layer 51 in each of the first to fourth resistance sections R1 to R4 will be explained. In the first resistance section R1, the magnetization 51m of each magnetization fixed layer 51 of the multiple MR elements 50 includes a component in the first magnetization direction. In the second resistance section R2, the magnetization 51m of each magnetization fixed layer 51 of the multiple MR elements 50 includes a component in the second magnetization direction, opposite to the first magnetization direction. In the third resistance section R3, the magnetization 51m of each magnetization fixed layer 51 of the multiple MR elements 50 includes a component in the first magnetization direction. In the fourth resistance section R4, the magnetization 51m of each magnetization fixed layer 51 of the multiple MR elements 50 includes a component in the second magnetization direction. In Figure 2, the two arrows drawn in the first and third resistance sections R1 and R3, respectively, indicate the first magnetization direction. In Figure 2, the two arrows drawn on the second and fourth resistors R2 and R4, respectively, indicate the second magnetization direction. In this embodiment, the first magnetization direction is in the X direction, and the second magnetization direction is in the -X direction.

[0058] Next, with reference to Figure 2, at least one detection signal generated by the magnetic sensor 1 will be described. When the direction of the magnetic field component MFx is the X direction, the resistance values ​​of each of the multiple MR elements 50 in the first and third resistive sections R1 and R3 decrease, and the resistance values ​​of each of the multiple MR elements 50 in the second and fourth resistive sections R2 and R4 increase, compared to the state in which the magnetic field component MFx is absent. As a result, the resistance values ​​of each of the first and third resistive sections R1 and R3 decrease, and the resistance values ​​of each of the second and fourth resistive sections R2 and R4 increase.

[0059] When the direction of the magnetic field component MFx is in the -X direction, the changes in the resistance values ​​of the first to fourth resistance sections R1 to R4 are reversed compared to the case where the direction of the magnetic field component MFx is in the X direction.

[0060] Thus, when the direction and intensity of the magnetic field component MFx change, the resistance values ​​of the first to fourth resistors R1 to R4 change such that the resistance values ​​of the first and third resistors R1 and R3 increase while the resistance values ​​of the second and fourth resistors R2 and R4 decrease, or the resistance values ​​of the first and third resistors R1 and R3 decrease while the resistance values ​​of the second and fourth resistors R2 and R4 increase. As a result, the potential at the connection point of the first and second resistors R1 and R2, i.e., the potential of the first output port 13, and the potential at the connection point of the third and fourth resistors R3 and R4, i.e., the potential of the second output port 14, change. The magnetic sensor 1 may generate a signal corresponding to the potential of the first output port 13 and a signal corresponding to the potential of the second output port 14 as detection signals. Alternatively, the magnetic sensor 1 may generate a signal corresponding to the potential difference between the first output port 13 and the second output port 14 as a detection signal. In this case, the magnetic sensor 1 may further include a differential amplifier (difference detector) that outputs a signal corresponding to the potential difference between the first output port 13 and the second output port 14 as a detection signal.

[0061] Next, with reference to Figures 10 and 11, we will explain the relationship between the phenomenon of a strong magnetic field other than the target magnetic field MF being temporarily applied to the MR element 50, i.e., magnetic shock, and the magnetization 51m of the magnetization fixed layer 51. Figure 10 is an explanatory diagram showing the direction of the magnetization 51m of the magnetization fixed layer 51 of the MR element 50. Figure 11 is an explanatory diagram showing the direction of the magnetization 51m of the magnetization fixed layer 51 after a strong magnetic field other than the target magnetic field MF has been temporarily applied to the MR element 50, that is, after the MR element 50 has received a magnetic shock. In Figures 10 and 11, the multiple arrows represent the directions of multiple magnetic moments corresponding to the magnetization 51m.

[0062] Figure 10 shows, for example, the state of the magnetization fixed layer 51 in the magnetic sensor 1 immediately after manufacturing or immediately after shipment. As shown in Figure 10, the directions of the multiple magnetic moments corresponding to the magnetization 51m are ideally the same regardless of their position within the magnetization fixed layer 51. In the example shown in Figure 10, the directions of the multiple magnetic moments are in the X direction regardless of their position within the magnetization fixed layer 51.

[0063] Figure 11 shows the state of the magnetization fixed layer 51 in the magnetic sensor 1 after being subjected to a magnetic shock. As shown in Figure 11, when subjected to a magnetic shock, the direction of some of the multiple magnetic moments corresponding to the magnetization 51m may deviate from the predetermined direction. As a result, the direction of the multiple magnetic moments differs depending on their position within the magnetization fixed layer 51.

[0064] In the state shown in Figure 11, the magnetization fixed layer 51 includes a first region A1 and a second region A2. The first region A1 is a region where the directions of the magnetization 51m are orderly. "Orderly directions of the magnetization 51m" means, for example, that the directions of the magnetic moments corresponding to the magnetization 51m are the same or approximately the same. The second region A2 is a region where the directions of the magnetization 51m are less orderly than in the first region A1. In the second region A2, the directions of multiple magnetic moments are more disordered compared to the first region A1.

[0065] Furthermore, the first region A1 does not need to have the same direction for multiple magnetic moments, as long as it satisfies the requirement that the direction of magnetization 51m is more orderly than that of the second region A2. In other words, the first region A1 may include parts where the directions for multiple magnetic moments are disordered, as long as it satisfies the above requirement.

[0066] As shown in Figure 11, the directions of the multiple magnetic moments corresponding to the magnetization 51m are disordered near the outer edge of the lower surface 51a of the magnetization fixed layer 51. Near the outer edge of the lower surface 51a of the magnetization fixed layer 51, the demagnetizing field becomes larger, making it easier for the direction of the magnetic moments to bend. Therefore, the directions of the multiple magnetic moments tend to be disordered near the outer edge of the lower surface 51a of the magnetization fixed layer 51 compared to the center of the magnetization fixed layer 51 (the centroid of the planar shape of the magnetization fixed layer 51).

[0067] The second region A2 may include the outer edge of the lower surface 51a of the magnetization fixed layer 51. That is, the second region A2 may be defined as an annular region including the outer edge of the lower surface 51a of the magnetization fixed layer 51. The first region A1 may be defined as the region located inside the second region A2.

[0068] In the state shown in Figure 10, the entire magnetization fixed layer 51 becomes the first region A1. Therefore, the first region A1 may be defined as the region where the direction of magnetization 51m is orderly before and after the magnetic shock. The second region A2 may be defined as the region where the direction of magnetization 51m is not orderly after the magnetic shock, that is, the region where the direction of magnetization 51m may become disordered after the magnetic shock.

[0069] In this embodiment, the first region A1 specifically includes a portion of the antiferromagnetic layer 511, a portion of the first ferromagnetic layer 512, a portion of the non-magnetic layer 513, and a portion of the second ferromagnetic layer 514. The second region A2 includes the remaining portion of the antiferromagnetic layer 511, the remaining portion of the first ferromagnetic layer 512, the remaining portion of the non-magnetic layer 513, and the remaining portion of the second ferromagnetic layer 514.

[0070] Next, with reference to Figure 4, the relationship between the first and second regions A1 and A2 of the magnetized fixed layer 51 and the free layer 53 will be explained. The free layer 53 is arranged such that the area of ​​the first overlapping portion where the free layer 53 and the first region A1 overlap when viewed from the direction parallel to the Z direction, i.e., the stacking direction, is larger than the area of ​​the second overlapping portion where the free layer 53 and the second region A2 overlap when viewed from the stacking direction.

[0071] As long as the requirement that the area of ​​the first overlapping portion is greater than the area of ​​the second overlapping portion is met, the free layer 53 may or may not overlap with the second region A2 when viewed from the stacking direction. In the latter case, the area of ​​the planar shape of the free layer 53 may be the same as the area of ​​the planar shape of the first region A1, or it may be smaller than the area of ​​the planar shape of the first region A1. Also in the latter case, the area of ​​the second overlapping portion becomes zero. In the example shown in Figure 4, the free layer 53 is positioned so that when viewed from the stacking direction, it overlaps only with the first region A1 and does not overlap with the second region A2.

[0072] Next, the operation and effects of the magnetic sensor 1 and MR element 50 according to this embodiment will be described. In this embodiment, as mentioned above, the area of ​​the first overlapping portion is larger than the area of ​​the second overlapping portion. As a result, according to this embodiment, fluctuations in at least one detection signal generated by the magnetic sensor 1 can be reduced. This effect will be explained below in comparison with the MR element of the comparative example.

[0073] Figure 12 is a cross-sectional view showing a comparative example MR element 150. The comparative example MR element 150 includes a magnetized fixed layer 151 instead of the magnetized fixed layer 51 in this embodiment. The magnetized fixed layer 151 has a lower surface 151a and an upper surface 151b located at both ends in the stacking direction, and a side surface 151c connecting the lower surface 151a and the upper surface 151b. The upper surface 151b is located at the Z-direction end of the magnetized fixed layer 151 and faces the free layer 53. The lower surface 151a is the surface opposite to the upper surface 151b and is located at the -Z-direction end of the magnetized fixed layer 151. The side surface 151c is continuous with the side surface of the gap layer 52.

[0074] The planar shape of the magnetized fixed layer 151 is substantially the same as the planar shape of the free layer 53. Furthermore, the planar shape of the magnetized fixed layer 151 is smaller than the planar shape of the magnetized fixed layer 51 in this embodiment, and is approximately the same size as the planar shape of the free layer 53.

[0075] The magnetization fixed layer 151, like the magnetization fixed layer 51 in this embodiment, includes an antiferromagnetic layer 511, a first ferromagnetic layer 512, a non-magnetic layer 513, and a second ferromagnetic layer 514.

[0076] Although not shown in the figures, the magnetized fixed layer 151, like the magnetized fixed layer 51 in this embodiment, includes a first region and a second region. The first region of the magnetized fixed layer 151 corresponds to the first region A1 in this embodiment and is a region where the direction of magnetization of the magnetized fixed layer 151 is orderly. The second region of the magnetized fixed layer 151 corresponds to the second region A2 in this embodiment and is a region where the direction of magnetization of the magnetized fixed layer 151 is not orderly. The free layer 53 overlaps with the entirety of the first region and almost the entirety of the second region when viewed from a direction parallel to the Z direction, i.e., the stacking direction.

[0077] In the comparative example MR element 150, after receiving a magnetic shock, a first region and a second region appear, similar to the magnetization fixed layer 51 in this embodiment. Now, let's consider the case where the magnetic shock is of a magnitude that causes the magnetic vortex structure of the free layer 53 to disappear. In this case, the magnetic vortex structure of the free layer 53 is reformed after the magnetic shock. The magnetic vortex structure stabilizes in either the first or second state. The first state is when the direction of the magnetization 53m of the free layer 53 is stable in a direction along the counterclockwise direction around the center 53c of the magnetic vortex structure when viewed from the Z direction. The second state is when the direction of the magnetization 53m of the free layer 53 is stable in a direction along the clockwise direction around the center 53c of the magnetic vortex structure when viewed from the Z direction.

[0078] The resistance value of the MR element 150 may differ depending on whether the magnetic vortex structure is in the first or second state. Ideally, the directions of the multiple magnetic moments corresponding to the magnetization of the magnetization fixed layer 151 are identical. However, in reality, the directions of the multiple magnetic moments vary to some extent. In particular, in the second region of the magnetization fixed layer 151, the directions of the multiple magnetic moments corresponding to the magnetization of the magnetization fixed layer 151 may not be symmetrical and may be biased in one direction or the other. Therefore, depending on whether the magnetic vortex structure is in the first or second state, the angle between the direction of each of the multiple magnetic moments and the direction of the magnetization 53m of the free layer 53 will differ, and the resistance value of the MR element 150 may differ. Since the state of the magnetic vortex structure cannot be controlled in the MR element 150, the resistance value of the MR element 150 cannot be controlled.

[0079] Here, a magnetic sensor composed of multiple comparative MR elements 150 is referred to as the comparative magnetic sensor. The configuration of the comparative magnetic sensor is the same as that of the magnetic sensor 1 according to this embodiment, except that multiple MR elements 150 are used instead of multiple MR elements 50. The comparative magnetic sensor is configured to generate at least one detection signal, similar to the magnetic sensor 1 according to this embodiment.

[0080] If at least one detection signal is normalized so that its maximum value is 1 and its minimum value is -1, then ideally, the value of at least one detection signal when the strength of the target magnetic field MF applied to the comparative example magnetic sensor is zero will be zero. However, in reality, as mentioned above, the resistance values ​​of the MR element 150 can differ, so the value of at least one detection signal in the above state may deviate from zero. Hereinafter, the value of at least one detection signal that deviates from zero will be referred to as the offset.

[0081] If the resistance value of the MR element 150 varies, the offset will fluctuate. In the comparative example, a magnetic shock can cause the direction of multiple magnetic moments corresponding to the magnetization of the magnetization fixed layer 151 to change, which can result in a fluctuation of the offset.

[0082] In contrast, in this embodiment, as described above, the free layer 53 is arranged such that the area of ​​the first overlapping portion is larger than the area of ​​the second overlapping portion. That is, in this embodiment, each of the multiple MR elements 50 is configured such that the difference between the offset before receiving a magnetic shock and the offset after receiving a magnetic shock is smaller than the difference that would occur if the planar shape of the magnetization fixed layer 51 were the same as the planar shape of the free layer 53, as in the comparative example MR element 150. As a result, according to this embodiment, the influence of multiple magnetic moments corresponding to the magnetization 51m of the magnetization fixed layer 51, more specifically, the influence of multiple magnetic moments that are not symmetrical in direction but biased in one direction or the other in the second region A2 can be suppressed. As a result, according to this embodiment, fluctuations in at least one detection signal caused by a magnetic shock, including offset fluctuations, can be reduced.

[0083] Next, other effects of this embodiment will be described. In this embodiment, the distance D1 between the outer edge of the lower surface 51a of the magnetized fixed layer 51 and the outer edge of the upper surface 53b of the free layer 53 is greater than the distance D2 between the outer edge of the lower surface 51a of the magnetized fixed layer 51 and the outer edge of the lower surface 53a of the free layer 53. As a result, according to this embodiment, it is possible to suppress the influence of the second region A2 on the portion of the free layer 53 near the upper surface 53b.

[0084] Furthermore, in this embodiment, the distance D2 between the outer edge of the lower surface 51a of the magnetized fixed layer 51 and the outer edge of the lower surface 53a of the free layer 53 is greater than the distance D3 between the outer edge of the lower surface 53a of the free layer 53 and the outer edge of the upper surface 53b of the free layer 53. As a result, according to this embodiment, the outer edge of the lower surface 51a of the magnetized fixed layer 51 can be moved further away from the free layer 53 compared to the case where the distance D2 is less than or equal to the distance D3. As a result, according to this embodiment, the influence of the second region A2 on the free layer 53 can be suppressed.

[0085] [Second Embodiment] Next, a second embodiment of the present disclosure will be described with reference to Figures 13 and 14. Figure 13 is a perspective view showing an MR element according to this embodiment. Figure 14 is a plan view showing an MR element according to this embodiment.

[0086] The configuration of the MR element 250 according to this embodiment is basically the same as that of the MR element 50 according to the first embodiment. However, the number of gaps 52 and the number of free layers 53 in the MR element 250 differ from those of the first embodiment. That is, the MR element 250 comprises a magnetization fixed layer 510 having magnetization with a fixed direction, two free layers 53, and two gap layers 52 arranged between the magnetization fixed layer 510 and the two free layers 53. The configuration, shape, and arrangement of each of the two gap layers 52 and the two free layers 53 are the same as in the first embodiment.

[0087] The magnetized fixed layer 510 faces the lower electrode 41. The planar shape of the magnetized fixed layer 510 may be the same as or different from the planar shape of the lower electrode 41. Furthermore, at least a portion of the outer edge of the planar shape of the magnetized fixed layer 510 may coincide with at least a portion of the outer edge of the planar shape of the lower electrode 41 when viewed from a direction parallel to the Z direction, i.e., the stacking direction. In the examples shown in Figures 13 and 14, the outer edge of the planar shape of the magnetized fixed layer 510 coincides with the outer edge of the planar shape of the lower electrode 41 when viewed from the stacking direction. More specifically, the outer edge of the lower surface of the magnetized fixed layer 510 coincides with the outer edge of the upper surface of the lower electrode 41 when viewed from the stacking direction.

[0088] The configuration of the magnetized fixed layer 510 is the same as that of the magnetized fixed layer 51 in the first embodiment, except for its shape. Like the magnetized fixed layer 51, the magnetized fixed layer 510 includes an antiferromagnetic layer 511, a first ferromagnetic layer 512, a non-magnetic layer 513, and a second ferromagnetic layer 514.

[0089] The magnetized fixed layer 510 has a lower surface 510a and an upper surface 510b located at both ends in the stacking direction. The upper surface 510b is located at the Z-direction end of the magnetized fixed layer 510. The lower surface 510a is the surface opposite to the upper surface 510b and is located at the -Z-direction end of the magnetized fixed layer 510.

[0090] One pair of gap layer 52 and one free layer 53, and the other pair of gap layer 52 and the other free layer 53, are arranged on the upper surface 510b of the magnetization fixed layer 510 with a gap between them. The description of the gaps D1 to D3 in the first embodiment also applies to this embodiment. If the magnetization fixed layer 51 in the description of the gaps D1 to D3 in the first embodiment is replaced with the magnetization fixed layer 510, it becomes the description of the gaps D1 to D3 in this embodiment.

[0091] As shown in Figure 14, we assume a first virtual plane PL1 that passes through the centroid C1 of each of the two free layers 53 and is parallel to both the stacking direction and the direction in which the two free layers 53 are aligned, and a second virtual plane PL2 that passes through the centroid C1 of one of the free layers 53 and is perpendicular to the first virtual plane PL1. The magnetized fixed layer 510 may have a shape that is symmetrical with respect to the first virtual plane PL1. Alternatively, the magnetized fixed layer 510 may have an asymmetrical shape with respect to the second virtual plane PL2.

[0092] The magnetization fixed layer 510 includes a first region A10 and a second region A20. The first region A10 corresponds to the first region A1 in the first embodiment. The second region A20 corresponds to the second region A2 in the first embodiment. The second region A20 is an annular region including the outer edge of the lower surface 510a of the magnetization fixed layer 510. The first region A10 is located inside the second region A20.

[0093] The relationship between the first and second regions A1, A2 of the magnetized fixed layer 51 and the free layer 53, as described in the first embodiment, also applies to the first and second regions A10, A20 of the magnetized fixed layer 510 and the free layer 53 in this embodiment. In the example shown in Figure 14, the two free layers 53 placed on the upper surface 510b of the magnetized fixed layer 510 are arranged so that, when viewed from the stacking direction, they overlap only with the first region A10 and not with the second region A20. When viewed from the stacking direction, the region between the two free layers 53 does not necessarily have to contain the second region A20.

[0094] Although not shown in the figures, in this embodiment, multiple MR elements 250 are connected in series by multiple upper electrodes 42. Each of the multiple upper electrodes 42 connects one free layer 53 of one of the two MR elements 250 to one free layer 53 of the other of the two MR elements 250.

[0095] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0096] [Third Embodiment] Next, a third embodiment of the present disclosure will be described with reference to Figure 15. Figure 15 is a cross-sectional view showing an MR element according to this embodiment. The configuration of the MR element 50 according to this embodiment differs from the first embodiment in the following respects. In this embodiment, the planar shape of the second ferromagnetic layer 514 of the magnetization fixed layer 51 is substantially the same as the planar shape of the free layer 53. Furthermore, the planar shape of the second ferromagnetic layer 514 is smaller than the planar shapes of the antiferromagnetic layer 511 and the first ferromagnetic layer 512 of the magnetization fixed layer 51, and is approximately the same size as the planar shape of the free layer 53.

[0097] The planar shape of the non-magnetic layer 513 may be substantially the same as that of the first ferromagnetic layer 512, or substantially the same as that of the second ferromagnetic layer 514. Figure 15 shows an example of the former.

[0098] As described in the first embodiment, the magnetized fixed layer 51 includes a first portion 51A and a second portion 51B located on both sides of the free layer 53 in a direction parallel to the Z direction, i.e., in a direction perpendicular to the stacking direction. In this embodiment, each of the first portion 51A and the second portion 51B includes a portion of the antiferromagnetic layer 511 and the first ferromagnetic layer 512, respectively, but does not include the second ferromagnetic layer 514. Furthermore, at least a portion of each of the first portion 51A and the second portion 51B includes the second region A2 described in the first embodiment. The second region A2 includes a portion of the antiferromagnetic layer 511 and the first ferromagnetic layer 512, respectively, but does not necessarily include the second ferromagnetic layer 514.

[0099] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0100] [Fourth Embodiment] Next, a fourth embodiment of the present disclosure will be described with reference to Figure 16. Figure 16 is a cross-sectional view showing an MR element according to this embodiment. The configuration of the MR element 50 according to this embodiment differs from the first embodiment in the following respects. As described in the first embodiment, the magnetized fixed layer 51 of the MR element 50 includes a first portion 51A and a second portion 51B located on both sides of the free layer 53 in a direction parallel to the Z direction, i.e., a direction perpendicular to the stacking direction. In this embodiment, the dimensions of the first portion 51A in the stacking direction and the dimensions of the second portion 51B in the stacking direction are different from each other.

[0101] In the example shown in Figure 16, the first portion 51A includes an antiferromagnetic layer 511, a first ferromagnetic layer 512, a non-magnetic layer 513, and a second ferromagnetic layer 514. The second portion 51B includes the antiferromagnetic layer 511 and the first ferromagnetic layer 512, but does not include the second ferromagnetic layer 514. Therefore, the dimensions of the first portion 51A in the stacking direction are larger than the dimensions of the second portion 51B in the stacking direction. Note that the second portion 51B may or may not include the non-magnetic layer 513. Figure 16 shows an example of the former.

[0102] Next, the planar shape of the magnetized fixed layer 51 will be described. First, with reference to Figure 17, a first example of the planar shape of the magnetized fixed layer 51 will be described. Figure 17 is a plan view showing a first example of the planar shape of the magnetized fixed layer 51. In the first example, the planar shape of the magnetized fixed layer 51 is an elongated ellipse in the direction perpendicular to the direction of the magnetization 51m of the magnetized fixed layer 51.

[0103] The first ferromagnetic layer 512 includes a first overlapping portion that overlaps with the free layer 53 when viewed from the stacking direction, and a first non-overlapping portion that does not overlap with the free layer 53 when viewed from the stacking direction. Each of the first portion 51A and the second portion 51B includes the first non-overlapping portion of the first ferromagnetic layer 512.

[0104] The second ferromagnetic layer 514 includes a second overlapping portion that overlaps with the free layer 53 when viewed from the stacking direction, and a second non-overlapping portion that does not overlap with the free layer 53 when viewed from the stacking direction. The first portion 51A includes the second non-overlapping portion of the second ferromagnetic layer 514, but the second portion 51B does not include the second non-overlapping portion of the second ferromagnetic layer 514.

[0105] Next, with reference to Figure 18, a second example of the planar shape of the magnetized fixed layer 51 will be described. Figure 18 is a plan view showing the second example of the planar shape of the magnetized fixed layer 51. In the second example, each of the first portion 51A and the second portion 51B of the magnetized fixed layer 51 has an elongated shape in a direction perpendicular to the direction in which the first portion 51A and the second portion 51B are aligned. Other structural features of the magnetized fixed layer 51 in the second example are the same as in the first example.

[0106] In Figures 17 and 18, the arrow drawn in the first portion 51A indicates the direction of magnetization of the second ferromagnetic layer 514 in the first portion 51A. Similarly, the arrow drawn in the second portion 51B indicates the direction of magnetization of the first ferromagnetic layer 512 in the second portion 51B. In this embodiment, the direction of magnetization 51m of the magnetization-fixed layer 51 is opposite on both sides of the free layer 53.

[0107] The leakage magnetic field generated due to the magnetization 51m of the magnetized fixed layer 51 is applied to the free layer 53. In this embodiment, the direction of the leakage magnetic field is constant. When the magnetic vortex structure of the free layer 53 is reformed after receiving a magnetic shock, the direction of the magnetization 53m of the free layer 53 may be in the direction of the leakage magnetic field. As described above, since the direction of the leakage magnetic field is constant, the direction of the magnetization 53m of the free layer 53 can be set to the same direction. That is, according to this embodiment, the magnetic vortex structure can be selectively set to the first state or the second state described in the first embodiment. As a result, according to this embodiment, fluctuations in at least one detection signal caused by a magnetic shock, including offset fluctuations, can be reduced.

[0108] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0109] [Fifth Embodiment] Next, a fifth embodiment of the present disclosure will be described with reference to Figure 19. Figure 19 is a cross-sectional view showing an MR element according to this embodiment. In this embodiment, the planar shapes of the first ferromagnetic layer 512, the non-magnetic layer 513, and the second ferromagnetic layer 514 of the magnetization fixed layer 51 are substantially the same as the planar shape of the free layer 53. Furthermore, the planar shapes of the first ferromagnetic layer 512, the non-magnetic layer 513, and the second ferromagnetic layer 514 are smaller than the planar shape of the antiferromagnetic layer 511 of the magnetization fixed layer 51, and are approximately the same size as the planar shape of the free layer 53.

[0110] As described in the first embodiment, the magnetized fixed layer 51 includes a first portion 51A and a second portion 51B located on both sides of the free layer 53 in a direction parallel to the Z direction, i.e., a direction perpendicular to the stacking direction. In this embodiment, each of the first portion 51A and the second portion 51B includes a portion of the antiferromagnetic layer 511 but does not include the first ferromagnetic layer 512 and the second ferromagnetic layer 514. Furthermore, at least a portion of each of the first portion 51A and the second portion 51B includes the second region A2 described in the first embodiment. The second region A2 includes a portion of the antiferromagnetic layer 511 but does not necessarily include the first ferromagnetic layer 512 and the second ferromagnetic layer 514.

[0111] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0112] [Sixth Embodiment] Next, a sixth embodiment of the present disclosure will be described with reference to Figure 20. Figure 20 is a cross-sectional view showing an MR element according to this embodiment. The configuration of the MR element 50 according to this embodiment differs from the first embodiment in the following respects. In this embodiment, the magnetization fixed layer 51 of the MR element 50 has a side surface 51c that connects the lower surface 51a and the upper surface 51b of the magnetization fixed layer 51. The side surface 51c is inclined more significantly with respect to the direction parallel to the Z direction, i.e., the stacking direction, compared to the side surface 53d of the free layer 53. The angle that the side surface 51c of the magnetization fixed layer 51 makes with respect to the lower surface 51a of the magnetization fixed layer 51 is smaller than the angle that the side surface 53d of the free layer 53 makes with respect to the lower surface 51a of the magnetization fixed layer 51.

[0113] Furthermore, assuming a virtual plane PL passing through the centroid C1 of the free layer 53 and parallel to the stacking direction, the magnetized fixed layer 51 may have a symmetrical or asymmetrical shape with respect to the virtual plane PL.

[0114] Furthermore, if one of the first portion 51A and the second portion 51B of the magnetization fixed layer 51 has a side surface 51c, the other portion does not need to have a side surface 51c. That is, the other portion of the first portion 51A and the second portion 51B may have the same shape as in any of the first, third, or fourth embodiments.

[0115] Other configurations, operations, and effects in this embodiment are the same as those in any of the first, third, or fourth embodiments.

[0116] [Seventh Embodiment] Next, a seventh embodiment of the present disclosure will be described with reference to Figures 21 and 22. Figure 21 is a cross-sectional view showing an MR element according to this embodiment. Figure 21 is a plan view showing an MR element according to this embodiment.

[0117] The configuration of the MR element 50 according to this embodiment differs from that of the first embodiment in the following respects. As shown in Figure 21, a specific cross-section parallel to the Z direction, i.e., the stacking direction, is assumed. The specific cross-section may be a cross-section parallel to the direction of magnetization 51m of the magnetization fixed layer 51. The lower surface 51a of the magnetization fixed layer 51 of the MR element 50 has two ends located at both ends in a direction perpendicular to the stacking direction in the specific cross-section. The free layer 53 of the MR element 50 is arranged such that the distance between the centroid C1 of the free layer 53 in a direction perpendicular to the stacking direction and one of the two ends of the lower surface 51a is smaller than the distance between the centroid C1 of the free layer 53 in a direction perpendicular to the stacking direction and the other of the two ends of the lower surface 51a.

[0118] Furthermore, the lower surface 53a of the free layer 53 has two ends located at both ends in a direction perpendicular to the stacking direction in a particular cross-section. In the example shown in Figures 21 and 22, the free layer 53 is positioned such that, when viewed from the stacking direction, one of the two ends of the lower surface 53a overlaps with one of the two ends of the lower surface 51a.

[0119] Here, we assume a virtual plane PL that passes through the centroid C1 of the free layer 53 and is parallel to the stacking direction. In this embodiment in particular, the virtual plane PL is orthogonal to the specific cross-section described above. The magnetized fixed layer 51 has an asymmetric shape with respect to the virtual plane PL.

[0120] In this embodiment, the leakage magnetic field generated due to the magnetization 51m of the magnetized fixed layer 51 is applied to the free layer 53. When the magnetic vortex structure of the free layer 53 is reformed after receiving a magnetic shock, the direction of the magnetization 53m of the free layer 53 may be in the direction of the leakage magnetic field. According to this embodiment, the magnetic vortex structure can be selectively set to the first state or the second state described in the first embodiment. As a result, according to this embodiment, fluctuations in at least one detection signal caused by a magnetic shock, including offset fluctuations, can be reduced.

[0121] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0122] [Eighth Embodiment] Next, an eighth embodiment of the present disclosure will be described with reference to Figure 23. Figure 23 is a cross-sectional view showing an MR element 50 according to this embodiment. The configuration of the MR element 50 according to this embodiment differs from the first embodiment in the following respects. In this embodiment, the side surface 53d of the free layer 53 of the MR element 50 includes a first surface 53d1 and a second surface 53d2 located between the first surface 53d1 and the lower surface 53a of the free layer 53.

[0123] The first angle that the second surface 53d2 makes with respect to the lower surface 53a is greater than or equal to the second angle that the first surface 53d1 makes with respect to the lower surface 53a. In the example shown in Figure 23, the first angle is greater than the second angle. The first angle may also be 90° or approximately 90°.

[0124] In this embodiment, the magnetization fixed layer 51 can be the magnetization fixed layer 51 from any of the first to seventh embodiments. The other configurations, operations, and effects in this embodiment are the same as those in any of the first to seventh embodiments.

[0125] [Ninth Embodiment] Next, a ninth embodiment of the present disclosure will be described with reference to Figure 24. Figure 24 is a cross-sectional view showing an MR element 50 according to this embodiment.

[0126] The configuration of the MR element 50 according to this embodiment differs from that of the first embodiment in the following respects. In this embodiment, the planar shape of the gap layer 52 of the MR element 50 is larger than the planar shape of the free layer 53 of the MR element 50. When viewed from a direction parallel to the Z direction, i.e., from the stacking direction, the gap layer 52 overlaps with at least a portion of each of the first portion 51A and the second portion 51B of the magnetization fixed layer 51 of the MR element 50.

[0127] In this embodiment, the planar shape of the gap layer 52 of the MR element 50 is the same as or nearly the same as the planar shape of the magnetization fixed layer 51 of the MR element 50. At least a portion of the outer edge of the planar shape of the gap layer 52 coincides with at least a portion of the outer edge of the planar shape of the magnetization fixed layer 51 when viewed from the stacking direction. More specifically, at least a portion of the outer edge of the lower surface of the gap layer 52 coincides with at least a portion of the outer edge of the upper surface 51b of the magnetization fixed layer 51 when viewed from the stacking direction.

[0128] The MR element 50 is formed, for example, by patterning a laminate including a magnetized fixed layer 51, a gap layer 52, and a free layer 53. In this embodiment, the magnetized fixed layer 51 and the free layer 53 are patterned separately such that the planar shapes of the magnetized fixed layer 51 and the free layer 53 are different from each other. For example, ion beam etching is used for patterning the magnetized fixed layer 51 and the free layer 53. In this embodiment, the free layer 53 is patterned so that the gap layer 52 is not etched and removed. As a result, according to this embodiment, it is possible to prevent the magnetized fixed layer 51 from being damaged by the ion beam. Consequently, according to this embodiment, it is possible to prevent the direction of the magnetization 51m of the magnetized fixed layer 51 from deviating from the desired direction due to the patterning of the free layer 53.

[0129] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0130] [Tenth Embodiment] Next, a tenth embodiment of the present disclosure will be described with reference to Figure 25. Figure 25 is a cross-sectional view showing an MR element 50 according to this embodiment.

[0131] The configuration of the MR element 50 according to this embodiment differs from that of the ninth embodiment in the following respects. The MR element 50 according to this embodiment comprises at least one structure 54 disposed on the gap layer 52. The at least one structure 54 includes a metallic material. The metallic material may be a magnetic metallic material or a non-magnetic metallic material. Alternatively, the at least one structure 54 may include both a magnetic metallic material and a non-magnetic metallic material. The dimensions of the at least one structure 54 in the direction parallel to the Z direction, i.e., the stacking direction, are smaller than the dimensions of the free layer 53 in the stacking direction.

[0132] Figure 25 shows an example in which the MR element 50 comprises multiple structures 54. The multiple structures 54 may be separated from each other. Each of the multiple structures 54 may or may not have an elongated shape. If each of the multiple structures 54 has an elongated shape, the multiple structures 54 may be shaped and arranged such that a striped pattern appears when viewed from the stacking direction.

[0133] As described in the ninth embodiment, the MR element 50 is formed, for example, by patterning a laminate including a magnetization fixed layer 51, a gap layer 52, and a free layer 53. The laminate includes a laminated film that later becomes the free layer 53. The multiple structures 54 may be parts of the laminated film. That is, the multiple structures 54 may be parts of the laminated film that remain after patterning when the laminated film is patterned so that the laminated film becomes the free layer 53.

[0134] Other configurations, operations, and effects in this embodiment are the same as those in the ninth embodiment.

[0135] [Embodiment 11] Next, an eleventh embodiment of the present disclosure will be described with reference to Figure 26. Figure 26 is a cross-sectional view showing an MR element 50 according to this embodiment.

[0136] The configuration of the MR element 50 according to this embodiment differs from the fourth embodiment in the following respects. In this embodiment, similar to the ninth embodiment, the planar shape of the gap layer 52 of the MR element 50 is larger than the planar shape of the free layer 53 of the MR element 50. In particular, in this embodiment, when viewed from a direction parallel to the Z direction, i.e., the stacking direction, the gap layer 52 overlaps with at least a portion of the first portion 51A of the magnetization fixed layer 51 of the MR element 50, but does not overlap with the second portion 51B of the magnetization fixed layer 51.

[0137] In addition, similar to the tenth embodiment, at least one structure 54 may be provided on the portion of the gap layer 52 that overlaps with the first portion 51A when viewed from the stacking direction.

[0138] Furthermore, similar to the sixth embodiment, one of the first portion 51A and the second portion 51B of the magnetization fixed layer 51 may have a side surface 51c that is significantly inclined in a direction parallel to the Z direction, i.e., with respect to the stacking direction.

[0139] Other configurations, operations, and effects in this embodiment are the same as those in any of the fourth, sixth, ninth, or tenth embodiments.

[0140] [The 12th Embodiment] Next, a twelfth embodiment of the present disclosure will be described with reference to Figure 27. Figure 27 is a perspective view showing an MR element 250 according to this embodiment.

[0141] The configuration of the MR element 250 according to this embodiment differs from that of the second embodiment in the following respects. The MR element 250 according to this embodiment includes a gap layer 520 instead of the two gap layers 52 in the second embodiment. The gap layer 520 is a tunnel barrier layer or a non-magnetic conductive layer, similar to the gap layer 52.

[0142] The planar shape of the gap layer 520 is larger than that of the free layer 53. The planar shape of the gap layer 520 is the same as or nearly the same as that of the magnetized fixed layer 510. The outer edge of the planar shape of the gap layer 520 coincides with the outer edge of the planar shape of the magnetized fixed layer 510 when viewed from the stacking direction. More specifically, the outer edge of the lower surface of the gap layer 520 coincides with the outer edge of the upper surface 510b of the magnetized fixed layer 510 when viewed from the stacking direction.

[0143] In Figure 27, for convenience, the shape of the free layer 53 is shown as a cylinder. However, the shape of the free layer 53 is not limited to a cylinder; it may be the same as the shape of the free layer 53 in the second embodiment, or the same as the shape of the free layer 53 in the eighth embodiment.

[0144] Furthermore, although not shown in the figures, the MR element 250 may also include at least one structure disposed on the gap layer 520, similar to the MR element 50 according to the tenth embodiment.

[0145] Other configurations, operations, and effects in this embodiment are the same as those in any of the second, eighth, or tenth embodiments.

[0146] This disclosure is not limited to the embodiments described above, and various modifications are possible. For example, the shape of the side surface 53d of the free layer 53 of the MR element 50 is not limited to the examples shown in each embodiment. For example, the side surface 53d of the free layer 53 may include three or more portions with different inclination angles.

[0147] Furthermore, the first magnetization direction described in the first embodiment may be the Y direction. The second magnetization direction described in the first embodiment may be the -Y direction.

[0148] As described above, a magnetoresistive element according to a first aspect of the present disclosure comprises a magnetization-fixed layer having magnetization with a fixed direction, a free layer that can have a magnetic vortex structure and is configured such that the center of the magnetic vortex structure moves in accordance with the target magnetic field, and a gap layer disposed between the magnetization-fixed layer and the free layer. The magnetization-fixed layer includes a first region and a second region in which the direction of magnetization is less orderly than that of the first region. The free layer is arranged such that the area of ​​the overlapping portion where the free layer and the first region overlap each other when viewed from the stacking direction of the magnetization-fixed layer, the gap layer, and the free layer is greater than the area of ​​the overlapping portion where the free layer and the second region overlap each other when viewed from the stacking direction.

[0149] In the magnetoresistive element of the first aspect of this disclosure, the free layer does not have to overlap with the second region when viewed from the stacking direction.

[0150] Furthermore, in the magnetoresistive element of the first embodiment of this disclosure, the magnetized fixed layer may have a first upper surface facing the free layer and a first lower surface opposite to the first upper surface. The second region may include the outer edge of the first lower surface.

[0151] Furthermore, in the magnetoresistive element of the first aspect of this disclosure, the free layer may have a second lower surface facing the magnetized fixed layer and a second upper surface opposite to the second lower surface. In a cross section intersecting the magnetized fixed layer and the free layer and parallel to the stacking direction, the distance between the outer edge of the first lower surface and the outer edge of the second upper surface in a direction perpendicular to the stacking direction may be greater than the distance between the outer edge of the first lower surface and the outer edge of the second lower surface in a direction perpendicular to the stacking direction.

[0152] Furthermore, in the magnetoresistive element of the first aspect of this disclosure, in a cross section that intersects the magnetized fixed layer and the free layer and is parallel to the stacking direction, the distance between the outer edge of the second lower surface and the outer edge of the first lower surface in a direction perpendicular to the stacking direction may be greater than the distance between the outer edge of the second lower surface and the outer edge of the second upper surface in a direction perpendicular to the stacking direction.

[0153] Furthermore, in a magnetoresistive element according to a first aspect of this disclosure, the magnetization fixed layer may include a first ferromagnetic layer and a second ferromagnetic layer made of a ferromagnetic material, and a non-magnetic layer made of a non-magnetic material disposed between the first ferromagnetic layer and the second ferromagnetic layer. The second ferromagnetic layer may be disposed between the first ferromagnetic layer and the free layer. The second region may include a part of the first ferromagnetic layer and a part of the second ferromagnetic layer. Alternatively, the second region may include a part of the first ferromagnetic layer but not the second ferromagnetic layer.

[0154] Furthermore, in the magnetoresistive element of the first aspect of this disclosure, the magnetization fixed layer may further include an antiferromagnetic layer made of an antiferromagnetic material and a ferromagnetic layer made of a ferromagnetic material disposed on the antiferromagnetic layer. The second region may include a part of the antiferromagnetic layer but may not include the ferromagnetic layer.

[0155] Furthermore, in a magnetoresistive element according to a first aspect of this disclosure, the free layer may have a lower surface facing the magnetized fixed layer, an upper surface opposite to the lower surface, and a side surface connecting the lower surface and the upper surface. The side surface may include a first surface and a second surface located between the first surface and the lower surface. The angle that the second surface makes with respect to the lower surface may be greater than or equal to the angle that the first surface makes with respect to the lower surface.

[0156] Furthermore, in the magnetoresistive element of the first aspect of this disclosure, the magnetized fixed layer may include a first portion and a second portion located on both sides of the free layer in a direction perpendicular to the stacking direction. The dimensions of the first portion and the dimensions of the second portion in the stacking direction may be different from each other.

[0157] Furthermore, in the magnetoresistive element of the first aspect of this disclosure, the magnetized fixed layer may have an asymmetric shape with respect to a virtual plane that passes through the centroid of the free layer and is parallel to the stacking direction when viewed from the stacking direction.

[0158] Furthermore, in the magnetoresistive element of the first aspect of this disclosure, the magnetization stationary layer may face the electrodes. At least a portion of the outer edge of the planar shape of the magnetization stationary layer may coincide with at least a portion of the outer edge of the planar shape of the electrodes when viewed from the stacking direction.

[0159] Furthermore, in the magnetoresistive element of the first aspect of this disclosure, the planar shape of the gap layer may be larger than the planar shape of the free layer. At least a portion of the outer edge of the planar shape of the gap layer may coincide with at least a portion of the outer edge of the planar shape of the magnetized fixed layer when viewed from the stacking direction. The magnetoresistive element of this disclosure may also include at least one structure comprising a metallic material and disposed on the gap layer. The dimensions of the at least one structure in the stacking direction may be smaller than the dimensions of the free layer in the stacking direction.

[0160] Furthermore, a magnetoresistive element according to a second aspect of the present disclosure comprises a magnetization-fixed layer having magnetization with a fixed direction, two free layers each capable of having a magnetic vortex structure and configured such that the center of the magnetic vortex structure moves in accordance with the target magnetic field, and a gap layer disposed between the magnetization-fixed layer and the two free layers. The magnetization-fixed layer includes a first region and a second region in which the direction of magnetization is less orderly than that of the first region. Each of the two free layers is arranged such that the area of ​​the overlapping portion where each of the two free layers and the first region overlap when viewed from the stacking direction of the magnetization-fixed layer, the gap layer, and the free layers is greater than the area of ​​the overlapping portion where each of the two free layers and the second region overlap when viewed from the stacking direction.

[0161] A magnetic sensor according to a first aspect of the present disclosure comprises a power port, a ground port, an output port, a first resistive section disposed between the power port and the output port, and a second resistive section disposed between the ground port and the output port. Each of the first resistive section and the second resistive section includes a plurality of magnetic sensing elements. Each of the plurality of magnetic sensing elements is a magnetoresistive element according to a first aspect of the present disclosure or a magnetoresistive element according to a second aspect of the present disclosure.

[0162] A magnetic sensor according to a second aspect of the present disclosure is configured to detect a target magnetic field and generate at least one detection signal. The magnetic sensor comprises a power port, a ground port, an output port, a first resistive section located between the power port and the output port, and a second resistive section located between the ground port and the output port. Each of the first and second resistive sections includes a plurality of magnetoresistive elements. Each of the plurality of magnetoresistive elements comprises a magnetization-fixed layer having magnetization with a fixed direction, a free layer that may have a magnetic vortex structure and is configured such that the center of the magnetic vortex structure moves in response to the target magnetic field, and a gap layer located between the magnetization-fixed layer and the free layer. The planar shape of the magnetization-fixed layer is larger than the planar shape of the free layer. At least one detection signal corresponds to the potential of the output port and has a predetermined value when the strength of the target magnetic field is zero. Each of the multiple magnetoresistive elements is configured such that the difference between a predetermined value before a strong magnetic field (not the target magnetic field) is temporarily applied to the magnetic sensor and a predetermined value after the strong magnetic field is temporarily applied is smaller than the difference that would occur if the planar shape of the magnetized fixed layer were the same as the planar shape of the free layer. [Explanation of Symbols]

[0163] 1...Magnetic sensor, 10...Substrate, 11...Power port, 12...Ground port, 13,14...Output ports, 41...Lower electrode, 42...Upper electrode, 50...MR element, 51...Magnetic fixed layer, 51m...Magnetic, 52...Gap layer, 53...Free layer, 53a...Bottom surface, 53b...Top surface, 53d...Side surface, 53m...Magnetic, A1...First region, A2...Second region, R1~R4...Resistance section.

Claims

1. A magnetization-fixed layer having magnetization with a fixed direction, A free layer that can have a magnetic vortex structure and is configured so that the center of the magnetic vortex structure can move in accordance with the target magnetic field, The system comprises a gap layer disposed between the magnetization fixed layer and the free layer, The magnetization-fixing layer includes a first region and a second region in which the direction of magnetization is less orderly than in the first region. The magnetoresistive element is characterized in that the free layer is arranged such that the area of ​​the overlapping portion where the free layer and the first region overlap when viewed from the stacking direction of the magnetization fixed layer, the gap layer and the free layer is larger than the area of ​​the overlapping portion where the free layer and the second region overlap when viewed from the stacking direction.

2. The magnetoresistive element according to claim 1, characterized in that the free layer does not overlap with the second region when viewed from the stacking direction.

3. The magnetization-fixed layer has a first upper surface facing the free layer and a first lower surface opposite to the first upper surface. The magnetoresistive element according to claim 1, characterized in that the second region includes the outer edge of the first lower surface.

4. The magnetization-fixed layer has a first upper surface facing the free layer and a first lower surface opposite to the first upper surface. The free layer has a second lower surface facing the magnetization-fixed layer and a second upper surface opposite to the second lower surface. The magnetoresistive element according to claim 1, characterized in that, in a cross section intersecting the magnetized fixed layer and the free layer and parallel to the stacking direction, the distance between the outer edge of the first lower surface and the outer edge of the second upper surface in a direction perpendicular to the stacking direction is greater than the distance between the outer edge of the first lower surface and the outer edge of the second lower surface in a direction perpendicular to the stacking direction.

5. The magnetization-fixed layer has a first upper surface facing the free layer and a first lower surface opposite to the first upper surface. The free layer has a second lower surface facing the magnetization-fixed layer and a second upper surface opposite to the second lower surface. The magnetoresistive element according to claim 1, characterized in that, in a cross section intersecting the magnetized fixed layer and the free layer and parallel to the stacking direction, the distance between the outer edge of the second lower surface and the outer edge of the first lower surface in a direction perpendicular to the stacking direction is greater than the distance between the outer edge of the second lower surface and the outer edge of the second upper surface in a direction perpendicular to the stacking direction.

6. The magnetoresistive element according to claim 1, characterized in that the magnetization fixed layer includes a first ferromagnetic layer and a second ferromagnetic layer made of a ferromagnetic material, and a non-magnetic layer made of a non-magnetic material disposed between the first ferromagnetic layer and the second ferromagnetic layer.

7. The second ferromagnetic layer is disposed between the first ferromagnetic layer and the free layer. The magnetoresistive element according to claim 6, characterized in that the second region includes a part of the first ferromagnetic layer and a part of the second ferromagnetic layer.

8. The second ferromagnetic layer is disposed between the first ferromagnetic layer and the free layer. The magnetoresistive element according to claim 6, characterized in that the second region includes a part of the first ferromagnetic layer but does not include the second ferromagnetic layer.

9. The magnetization fixing layer further includes an antiferromagnetic layer made of an antiferromagnetic material and a ferromagnetic layer made of a ferromagnetic material disposed on the antiferromagnetic layer. The magnetoresistive element according to claim 1, characterized in that the second region includes a part of the antiferromagnetic layer but does not include the ferromagnetic layer.

10. The free layer has a lower surface facing the magnetization-fixed layer, an upper surface opposite to the lower surface, and a side surface connecting the lower surface and the upper surface. The aforementioned side surface includes a first surface and a second surface located between the first surface and the lower surface. The magnetoresistive element according to claim 1, characterized in that the angle the second surface makes with respect to the lower surface is greater than or equal to the angle the first surface makes with respect to the lower surface.

11. The magnetization-fixed layer includes a first portion and a second portion located on both sides of the free layer in a direction perpendicular to the stacking direction, The magnetoresistive element according to claim 1, characterized in that the dimensions of the first portion in the stacking direction and the dimensions of the second portion in the stacking direction are different from each other.

12. The magnetoresistive element according to claim 1, characterized in that the magnetized fixed layer has an asymmetric shape with respect to a virtual plane that passes through the centroid of the free layer when viewed from the stacking direction and is parallel to the stacking direction.

13. The magnetization fixing layer faces the electrode, The magnetoresistive element according to claim 1, characterized in that at least a portion of the outer edge of the planar shape of the magnetization fixed layer coincides with at least a portion of the outer edge of the planar shape of the electrode when viewed from the stacking direction.

14. The magnetoresistive element according to claim 1, characterized in that the planar shape of the gap layer is larger than the planar shape of the free layer.

15. The magnetoresistive element according to claim 14, characterized in that at least a portion of the outer edge of the planar shape of the gap layer coincides with at least a portion of the outer edge of the planar shape of the magnetization stationary layer when viewed from the stacking direction.

16. Furthermore, it comprises at least one structure containing a metal material and disposed on the gap layer, The magnetoresistive element according to claim 14, characterized in that the dimensions of the at least one structure in the stacking direction are smaller than the dimensions of the free layer in the stacking direction.

17. A magnetization-fixed layer having magnetization with a fixed direction, Two free layers, each capable of having a magnetic vortex structure and configured so that the center of the magnetic vortex structure moves according to the target magnetic field, The system comprises a magnetization-fixed layer and a gap layer disposed between the two free layers, The magnetization-fixing layer includes a first region and a second region in which the direction of magnetization is less orderly than in the first region. A magnetoresistive element characterized in that each of the two free layers is arranged such that, when viewed from the stacking direction of the magnetization fixed layer, the gap layer, and the free layer, the area of ​​the overlapping portion where each of the two free layers and the first region overlap is larger than the area of ​​the overlapping portion where each of the two free layers and the second region overlap when viewed from the stacking direction.

18. Power port, Grandport and, Output port, A first resistor is positioned between the power port and the output port, It comprises a second resistor positioned between the ground port and the output port, Each of the first and second resistive sections includes a plurality of magnetic detection elements. A magnetic sensor characterized in that each of the plurality of magnetic detection elements is a magnetoresistive element according to any one of claims 1 to 17.

19. A magnetic sensor configured to detect a target magnetic field and generate at least one detection signal, Power port, Grandport and, Output port, A first resistor is positioned between the power port and the output port, It comprises a second resistor positioned between the ground port and the output port, Each of the first resistive section and the second resistive section includes a plurality of magnetoresistive elements. Each of the plurality of magnetoresistive elements is A magnetization-fixed layer having magnetization with a fixed direction, A free layer that can have a magnetic vortex structure and is configured so that the center of the magnetic vortex structure can move in accordance with the target magnetic field, The system comprises a gap layer disposed between the magnetization fixed layer and the free layer, The planar shape of the magnetized fixed layer is larger than the planar shape of the free layer. The at least one detection signal corresponds to the potential of the output port and becomes a predetermined value when the strength of the target magnetic field is zero. A magnetic sensor characterized in that each of the plurality of magnetoresistive elements is configured such that the difference between a predetermined value before a strong magnetic field other than the target magnetic field is temporarily applied to the magnetic sensor and the predetermined value after the strong magnetic field is temporarily applied is smaller than the difference when it is assumed that the planar shape of the magnetization fixed layer is the same as the planar shape of the free layer.

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