Semiconductor device manufacturing methods

Abstract

To improve the flatness of the upper part of the isolation region of a semiconductor device. [Solution] A method for manufacturing a semiconductor device comprising a substrate having a first surface, a second surface facing the first surface, and a plurality of semiconductor regions disposed between the first surface and the second surface, the method comprising the steps of: preparing the substrate having a trench structure extending from the first surface and a member provided inside the trench structure, and having a separation portion that separates the plurality of semiconductor regions; and applying a precursor to the substrate such that the amount applied to the upper part of the separation portion differs from that applied to other parts, thereby forming a first film having a flat upper surface.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor device.

Background Art

[0002] Patent Document 1 discloses a semiconductor device having a separation portion extending from the light incident surface side of a semiconductor substrate.

Prior Art Document

Patent Document

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the process of manufacturing a semiconductor device having a separation portion disclosed in Patent Document 1, the flatness of the insulating film after forming the separation portion may be reduced.

Means for Solving the Problems

[0005] According to one disclosure of the present specification, there is provided a method for manufacturing a semiconductor device including a substrate having a first surface, a second surface facing the first surface, and a plurality of semiconductor regions disposed between the first surface and the second surface, the method comprising: preparing the substrate having a trench structure extending from the first surface and a member provided inside the trench structure and having a separation portion for separating the plurality of semiconductor regions; and applying a precursor on the substrate such that an application amount on the upper portion of the separation portion is different from that of other portions to form a first film having a flat upper surface.

Effects of the Invention

[0006] According to the present invention, it is possible to improve the flatness of the upper part of the isolation portion of a semiconductor device. [Brief explanation of the drawing]

[0007] [Figure 1] A schematic diagram showing the configuration of a planarization device. [Figure 2] A schematic diagram illustrating the flattening process. [Figure 3] A schematic diagram illustrating the manufacturing method of a semiconductor device according to the first embodiment. [Figure 4] A schematic diagram illustrating the manufacturing method of a semiconductor device according to the first embodiment. [Figure 5] A schematic diagram illustrating the configuration of the semiconductor device according to the first embodiment. [Figure 6] A schematic diagram illustrating the manufacturing method of a semiconductor device according to the first embodiment. [Figure 7] A schematic diagram illustrating the manufacturing method of a semiconductor device according to the second embodiment. [Figure 8] A schematic diagram illustrating the manufacturing method of a semiconductor device according to the second embodiment. [Figure 9] A schematic diagram illustrating the configuration of the semiconductor device in the second embodiment. [Figure 10] A schematic diagram illustrating the manufacturing method of a semiconductor device according to the third embodiment. [Figure 11] A schematic diagram illustrating the manufacturing method of a semiconductor device according to the fourth embodiment. [Figure 12] A schematic diagram illustrating the manufacturing method of a semiconductor device according to the fifth embodiment. [Figure 13] A schematic diagram illustrating an application example of the semiconductor device according to the sixth embodiment. [Modes for carrying out the invention]

[0008] The embodiments will be described below with reference to the drawings. Note that the embodiments described below do not limit the invention as defined in the claims. While multiple features are described in the embodiments, not all of these features are essential to the invention, and the features may be combined in any way. Furthermore, in the attached drawings, the same or similar configurations are given the same reference numeral, and redundant descriptions may be omitted.

[0009] Embodiments of the present invention will be described in detail below with reference to the drawings. In the following description, terms indicating specific directions or positions (e.g., "up," "down," "right," "left," and other terms including these terms) will be used as needed. The use of these terms is for the purpose of facilitating the understanding of embodiments with reference to the drawings, and the meaning of these terms does not limit the technical scope of the present invention.

[0010] In this specification, a plan view refers to a view taken from a direction perpendicular to the top surface of the semiconductor substrate. A cross-sectional view refers to a surface perpendicular to the top surface of the semiconductor substrate. If the top surface of the semiconductor substrate is rough when viewed microscopically, the plan view is defined based on the top surface of the semiconductor substrate as viewed macroscopically. The top surface of the semiconductor substrate is defined as the surface on which elements formed on the semiconductor substrate, such as the gate of a transistor, are provided, or the surface on which connections to contact plugs are located.

[0011] Furthermore, expressions such as "A or B," "at least one of A and B," "at least one of A and / or B," and "one or more of A and / or B" include all possible combinations of the enumerated items unless explicitly defined otherwise. That is, the above expressions are understood to disclose all cases where at least one A is included, where at least one B is included, and where at least one A and at least one B are included. This applies equally to combinations of three or more elements.

[0012] <First Embodiment> Figure 1 is a schematic diagram showing the configuration of the planarization apparatus 100 according to this embodiment. Directions are indicated in an XYZ coordinate system where the horizontal plane is the XY plane. Generally, the substrate 1, which is the object to be processed, is placed on the substrate stage 3 so that its surface is parallel to the horizontal plane (XY plane). Therefore, in the following, the directions that are orthogonal to each other in the plane along the surface of the substrate 1 will be referred to as the X axis and the Y axis, and the direction perpendicular to the X axis and the Y axis will be referred to as the Z axis. Also, in the following, the directions parallel to the X axis, Y axis and Z axis in the XYZ coordinate system will be referred to as the X direction, Y direction and Z direction, respectively, and the rotational directions around the X axis, Y axis and Z axis will be referred to as the θX direction, θY direction and θZ direction, respectively. The substrate 1 will be described later, but it is a material to which semiconductor processes can be applied, such as a semiconductor wafer, a semiconductor wafer with a wiring structure formed on it, a glass substrate with an element formed on it, or a metal substrate.

[0013] The underlying pattern on the substrate has an uneven profile due to the pattern formed in the previous process. In particular, with the multi-layer structuring of memory elements in recent years, some process substrates have a step of around 100 nm. The steps caused by the gentle undulation of the entire substrate can be corrected by the focus tracking function of the scan exposure apparatus used in the photolithography process. However, the fine unevenness with a pitch that fits within the exposure slit area of the exposure apparatus may fall outside the DOF (Depth Of Focus) of the exposure apparatus. Conventionally, as a method for smoothing the underlying pattern of the substrate, a method of forming or planarizing a planarization layer such as SOC (Spin On Carbon) or CMP (Chemical Mechanical Polishing) has been used. However, there is a problem that sufficient planarization performance cannot be obtained with the conventional technology. For example, the manufacturing process is evolving for new technology nodes such as 22 nm, 16 nm, 14 nm, and 10 nm. Even if a practically sufficient planarization layer was obtained at the node one generation ago, the planarization layer may not withstand practical use at the next node. For example, the surface unevenness of the planarization layer that was allowed at the previous node may not be allowed at the next node. Also, CMP has a high process cost and the applicable processes are limited, while the unevenness of the underlying layer due to multi-layerization in the future tends to further increase.

[0014] To solve this problem, a planarization apparatus that performs planarization of the substrate using imprint technology has been studied. The planarization apparatus contacts the uncured composition previously supplied to the substrate with the flat surface of a member or a member without a pattern formed thereon (flat template) to perform local or planarization of the entire substrate surface. Then, with the composition and the flat template in contact, the composition is cured, and the flat template is separated from the cured composition. Thereby, a planarization layer is formed on the substrate. This planarization apparatus is not affected by the unevenness of the pattern surface of the substrate compared to the generally used planarization method using an SOC sacrificial film, and it is expected that the planarization accuracy will be improved compared to the existing methods.

[0015] The planarization device 100 in FIG. 1 can be embodied by a molding device that molds a composition on the substrate 1 using a plate (super straight) 9 as a pressing member. The planarization device 100 cures the composition while the material on the substrate 1 and the plate 9 are in contact, and forms a planarized layer of the material on the substrate 1 by separating the plate 9 from the cured composition.

[0016] The substrate 1 is a semiconductor, insulator, or metal substrate, and its shape can be circular like a silicon wafer or a quartz wafer, or rectangular like (mother) glass for FPD (Flat Panel Display). The material of the substrate 1 can be a single crystal silicon wafer, but is not limited thereto. The material of the substrate can be an elemental semiconductor or a compound semiconductor such as silicon, germanium, diamond, silicon carbide, silicon germanium, gallium nitride, gallium arsenide, indium arsenide, cadmium telluride. Also, the material of the substrate 1 can be an inorganic insulator such as silicon oxide, silicon nitride, aluminum oxide, aluminum nitride. Also, the material of the substrate 1 can be an organic insulator such as polyimide, polyamide, polycarbonate. Also, the substrate 1 may be made of aluminum, a titanium-tungsten alloy, an aluminum-silicon alloy, or an aluminum-copper-silicon alloy. In short, the substrate 1 can be composed of any one or a plurality of materials selected from the materials listed above. Note that at least one layer of a semiconductor, insulator, or metal film may be formed on the surface of the substrate 1, and its surface may be flat or have formed irregularities. Also, a substrate with a adhesion layer formed on its surface by surface treatment such as silane coupling treatment, silazane treatment, or formation of an organic thin film to improve the adhesion to the composition may be used. Note that the substrate 1 is typically circular with a diameter of 300 mm, but is not limited thereto.

[0017] Plate 9 can be made of a light-transmitting material, taking into consideration the light irradiation process. Such materials may be light-transmitting inorganic materials such as glass or quartz, or light-transmitting organic materials such as PMMA (Polymethyl methacrylate) or polycarbonate resin. Plate 9 may be a rigid plate or a flexible film. The surface of plate 9 that contacts the composition is flat. Ideally, plate 9 is circular with a diameter greater than 300 mm and less than 500 mm, but it is not limited to this. The thickness of plate 9 is preferably 0.25 mm or more and less than 2 mm, but it is not limited to this. If the composition is a thermosetting material rather than a photocurable material, plate 9 does not need to be transparent; it can be made of a material having the above-mentioned properties.

[0018] The composition is a precursor that hardens to become at least part of a planarized film, and is a curable composition that can harden upon exposure to light or thermal energy. A curable composition that can harden upon exposure to light or thermal energy may be a photocurable composition that hardens upon irradiation with light, a thermosetting composition that hardens upon heating, or a photothermosetting composition that hardens upon exposure to both light and thermal energy. Examples of photocurable compositions include UV-curable liquids. Typically, monomers such as acrylates and methacrylates can be used as UV-curable liquids. The curable composition may also be called a moldable material. Hereinafter, the moldable material will also be simply referred to as the "material".

[0019] As shown in Figure 1, the planarization device 100 includes a substrate chuck 2, a substrate stage 3, a base platen 4, a support column 5, a top plate 6, a guide bar 7, a support column 8, a plate chuck 11, a head 12, and an alignment shelf 13. The planarization device 100 further includes a pressure adjustment unit 15, a supply unit 17, a substrate transport unit 18, an alignment scope 19, a light source 20, a stage drive unit 21, a plate transport unit 22, a cleaning unit 23, an input unit 24, and a control unit 200. The substrate chuck 2 and substrate stage 3 can hold and move the substrate 1. The plate chuck 11 and head 12 can hold and move the plate 9.

[0020] The substrate 1 is brought in from outside the planarization device 100 by a substrate transport unit 18, which includes a transport hand, and is held by a substrate chuck 2. The substrate stage 3 is supported by a base platen 4 and is driven in the X and Y directions to position the substrate 1 held by the substrate chuck 2 in a predetermined position. The stage drive unit 21 includes, for example, a linear motor or an air cylinder, and drives the substrate stage 3 in at least the X and Y directions, but may also have the function of driving the substrate stage 3 in two or more axes (for example, six axes). The stage drive unit 21 also includes a rotation mechanism and can rotate the substrate chuck 2 or the substrate stage 3 in the θZ direction.

[0021] The pressing member, plate 9, is brought in from outside the flattening device 100 by a plate transport unit 22, including a transport hand, and held by a plate chuck 11. The plate 9 has, for example, a circular or rectangular outer shape and a first surface including a flat surface 10 that contacts the material placed on the substrate 1, and a second surface opposite to the first surface. In this embodiment, the flat surface 10 is the same size as the substrate 1 or larger than the substrate 1. The plate chuck 11 is supported by a head 12 and may have the function of correcting the position of the plate 9 in the θZ direction (tilt around the Z axis). Each of the plate chuck 11 and the head 12 includes an aperture that allows light (ultraviolet light) irradiated from the light source 20 through a collimator lens to pass through. The plate chuck 11 functions as a holding part that mechanically holds the plate 9. For example, the plate chuck 11 holds the plate 9 by pulling the second surface of the plate 9 upwards. The head 12 also mechanically holds the plate chuck 11. The plate chuck 11 and the head 12 constitute a forming unit 50 that performs the process of forming a planarized film. The head 12 includes a drive mechanism (not shown) for positioning the distance between the substrate 1 and the plate 9 when the plate 9 is brought into contact with and separated from the material on the substrate 1, and moves the plate 9 in the Z direction. The drive mechanism of the head 12 may be composed of an actuator such as a linear motor, an air cylinder, or a voice coil motor. A load cell may also be placed in the plate chuck 11 or the head 12 for measuring the pressing force (imprinting force) of the plate 9 against the material on the substrate. The plate deformation mechanism (plate deformation unit) first includes a sealing member 14 that seals the spatial region A formed by the space inside the plate chuck 11 and the internal space surrounded by the plate 9. The plate deformation mechanism also includes a pressure adjustment unit 15 installed outside the plate chuck 11 that adjusts the pressure in the spatial region A. The sealing member 14 is made of a light-transmitting flat plate member such as quartz glass, and is provided with a connection port (not shown) for a pipe 16 connected to the pressure adjustment unit 15. The pressure adjustment unit 15 can increase the amount by which the plate 9 deforms convexly toward the substrate side by increasing the pressure in the spatial region A.Furthermore, the pressure adjustment unit 15 can reduce the amount of convex deformation of the plate 9 by lowering the pressure in spatial region A. Support columns 5 that support the top plate 6 are arranged on the base plate 4. The guide bar 7 is suspended from the top plate 6, passes through the alignment shelf 13, and is fixed to the head 12. The alignment shelf 13 is suspended from the top plate 6 via support columns 8. The guide bar 7 passes through the alignment shelf 13. In addition, the alignment shelf 13 is equipped with a height measuring system (not shown) for measuring the height (flatness) of the substrate 1 held by the substrate chuck 2, for example, using an oblique incidence image misalignment method.

[0022] The alignment scope 19 includes an optical system and imaging system for observing a reference mark provided on the substrate stage 3 and an alignment mark provided on the plate 9. However, if no alignment mark is provided on the plate 9, the alignment scope 19 may not be necessary. The alignment scope 19 is used for alignment, measuring the relative position of the reference mark provided on the substrate stage 3 and the alignment mark provided on the plate 9, and correcting any misalignment.

[0023] The supply unit 17 includes a dispenser with nozzles that dispense uncured material onto the substrate 1, and supplies (coats) the material onto the substrate. The supply unit 17 employs, for example, a piezo jet system or a micro solenoid system, and can supply a minute volume of material of about 1 pL (picoliters) onto the substrate 1 while the substrate stage 3 is scanning. There is no limit to the number of nozzles in the supply unit 17; there may be one (single nozzle) or multiple (for example, 100 or more). Multiple nozzles may form a linear nozzle array of one or more rows. Dispensers of the type known as an inkjet head are particularly suitable because they can apply liquid material to the substrate as minute droplets. A piezo inkjet head, which is equipped with at least one piezoelectric energy generator at each nozzle, is particularly suitable because it can change the volume of the ejected droplets.

[0024] The cleaning unit 23 cleans the plate 9 while it is held in the plate chuck 11. In this embodiment, the cleaning unit 23 removes material adhering to the plate 9, particularly to the flat surface 10, by separating the plate 9 from the hardened material on the substrate. The cleaning unit 23 may, for example, wipe off the material adhering to the plate 9, or it may remove the material adhering to the plate 9 using UV irradiation, electrostatic discharge, wet cleaning, dry plasma cleaning, or the like.

[0025] The control unit 200 is composed of a computer device including a CPU and memory, and controls the entire planarization apparatus 100. The control unit 200 functions as a processing unit that comprehensively controls each part of the planarization apparatus 100 and performs the planarization process. Here, the planarization process is a process in which the flat surface 10 of the plate 9 is brought into contact with the material on the substrate, and the flat surface 10 is made to conform to the surface shape of the substrate 1, thereby flattening the material. Generally, the planarization process is performed on a lot basis, that is, for each of the multiple substrates included in the same lot.

[0026] Next, the planarization process will be explained with reference to Figure 2. First, the material IM is supplied to the substrate 1 on which the base pattern 1a is formed by the supply unit 17. Figure 2(a) shows the state after the material IM has been placed on the substrate 1 but before the plate 9 is brought into contact with it. Next, as shown in Figure 2(b), the material IM on the substrate 1 is brought into contact with the flat surface 10 of the plate 9. The plate 9 presses against the material IM, causing the material IM to spread across the entire surface of the substrate 1. Figure 2(b) shows the state where the entire flat surface 10 of the plate 9 is in contact with the material IM on the substrate 1, and the flat surface 10 of the plate 9 conforms to the surface shape of the substrate 1. Then, in the state shown in Figure 2(b), light is irradiated from the light source 20 through the plate 9 onto the material IM on the substrate 1, thereby hardening the material IM. After that, the plate 9 is separated from the hardened material IM on the substrate 1. This forms a layer of material IM of uniform thickness (planarization layer) across the entire surface of the substrate 1. Figure 2(c) shows the state in which a planarization layer made of material IM has been formed on the substrate 1. Hereafter, the contact (adhesion) or separation between the flat surface 10 of the plate 9 and the material IM on the substrate 1 will be simply referred to as "contact (adhesion) or separation" between the plate 9 and the material IM on the substrate 1. Also below, the material IM in the state supplied to the substrate 1 will be referred to as a precursor, and the material IM after curing will be referred to as a film.

[0027] Next, a method for manufacturing articles (semiconductor devices, liquid crystal display devices, color filters, MEMS, etc.) using this planarization apparatus 100 will be described. This manufacturing method includes the steps of: planarizing a composition by bringing it into contact with a mold on a substrate (wafer, glass substrate, etc.) using the aforementioned planarization apparatus; curing the composition; and separating the composition from the mold. This forms a planarized film on the substrate. Then, the substrate on which the planarized film has been formed is subjected to processing such as patterning using a lithography apparatus, and the processed substrate is processed in other well-known processing steps to manufacture an article. Other well-known processes include etching, resist stripping, dicing, bonding, packaging, etc. According to this manufacturing method, articles of higher quality than conventional methods can be manufactured.

[0028] The following explanation will use a semiconductor device as a specific example. Let's assume the semiconductor device is, for example, a photoelectric sensor. Figures 3(a) and 3(b) are schematic diagrams illustrating the manufacturing method of the semiconductor device according to this embodiment.

[0029] The semiconductor devices 300a and 300b each have a semiconductor substrate 310, the semiconductor substrate 310 having pixels 320. Each pixel 320 has a photoelectric conversion unit 321, which generates an electric charge corresponding to the incident light. A signal based on the generated charge is output from the pixel 320 to a column circuit (not shown). This column circuit performs various processes, such as AD conversion to convert the input signal into a digital signal and noise reduction. The digital signals are then sequentially read from multiple column circuits. As a result, the semiconductor devices of this embodiment can generate a signal based on the electric charge incident on the photoelectric conversion unit 321. The first surface P1 is the upper surface (light incident surface) of the semiconductor substrate 310, and the second surface P2 is the lower surface of the semiconductor substrate 310 facing the first surface P1. The semiconductor devices 300a and 300b are back-illuminated semiconductor devices, for example, having multiple wiring layers (not shown) on the side of the second surface P2.

[0030] A separation section 330 formed by a trench is provided on the first surface P1, and the separation section 330 separates a plurality of semiconductor regions. Photoelectric conversion sections 321 are provided in each of the plurality of semiconductor regions, and adjacent photoelectric conversion sections 321 are separated from each other by the separation section 330 extending from the first surface P1. The separation section 330 can be formed, for example, by embedding a material in the trench structure. The material may be an insulator or a metal. When the separation section 330 is formed by embedding a metal in the trench structure, the light shielding performance is improved. Furthermore, the separation section 330 may include voids. Note that the depth and position of the separation section 330 are not limited to the configuration shown in Figure 3(a). The separation section 330 may be a deep trench isolation (DTI) that penetrates the semiconductor substrate 310, or it may be a DTI that does not penetrate the semiconductor substrate 310. The separation unit 330 may be configured to surround the entire periphery of the photoelectric conversion unit 321 in a plan view, or it may be configured to surround only the opposite side of the photoelectric conversion unit 321, for example.

[0031] Figure 3(a) shows the state in which the insulating film 340 is formed on the semiconductor substrate 310 after the separation portion 330 has been formed. The separation portion 330 has a convex structure. A convex structure can also be described as a structure in which the uppermost part of the component included in the separation portion 330 is higher than the first surface P1, with respect to the second surface P2. The insulating film 340 is formed covering the separation portion 330. Here, a convex portion may occur on the upper surface of the insulating film 340 located above the separation portion 330. If the flatness of the upper surface of the insulating film 340 is low in this way, for example, a filter layer or microlens placed on top of the insulating film 340 may not be able to perform as desired. Various optical filters such as color filters, infrared light cut filters, and monochrome filters can be used for the filter layer. For the color filter, RGB color filters of R (red), G (green), and B (blue), or RGBW color filters with W pixels can be used. The W pixels can be configured by providing an insulating layer instead of a color filter.

[0032] Therefore, in the embodiment of the present invention, as shown in Figure 3(b), the amount of liquid precursor (material IM) is predetermined and applied so that less is applied to the upper part of the separation section 330 and more to the other parts. Then, if necessary, the flat surface of the plate is pressed against the liquid to cure it.

[0033] Uncured material is applied to the upper part of a pre-formed separation section 330 using an inkjet head equipped with a piezoelectric element as an ejection actuator. Specifically, droplets are injected N times per unit area (N is a natural number) onto the upper part of the separation section 330, and N+1 or more times per unit area onto the first surface P1. The number of droplets injected can be determined according to the formation pattern of the separation section 330. Specifically, droplets are injected while changing the relative position between the ejection port and the substrate, according to a drawing map that determines the number (or amount) of droplets to be injected onto the substrate and their injection position on the upper surface, based on the pattern data of the resist mask for forming the separation section 330.

[0034] Because the regions between the multiple separation sections 330 are filled in this way, the surface of the first film 350 that is subsequently formed becomes flat. The liquid used here is preferably a composition that hardens when exposed to light energy (a precursor to the hardened film).

[0035] For curing, an exposure apparatus can be used, for example. It may be an ArF immersion exposure apparatus, an ArF dry exposure apparatus, or a KrF exposure apparatus. The exposure amount may be adjusted according to the pattern of the separation section 330.

[0036] Next, the method for manufacturing the semiconductor device of this embodiment will be described. Figure 4 is a schematic diagram illustrating the method for manufacturing the semiconductor device of the first embodiment. The manufacturing method shown in Figure 4 is obtained by applying the planarization method described in Figures 1 and 2 to the method for manufacturing the semiconductor device described in Figure 3(b).

[0037] Figure 4(a) shows that, similar to Figure 3(b), after the step of preparing the semiconductor substrate 310 on which the separation portion 330 is formed, the curing film material IM is applied. The amount of material IM applied is adjusted according to the shape of the upper surface of the semiconductor substrate 310. Here, the amount of material IM applied to the upper part of the separation portion 330 is supplied so that it is less than the amount applied to the flat upper surface of the semiconductor substrate 310 around it. This can be controlled, for example, by changing the number of droplets of the precursor (liquid) of material IM ejected by an inkjet method, or by changing the size of the droplets.

[0038] Next, as shown in Figure 4(b), if necessary, the plate 9 is brought into contact with the material IM to flatten the upper surface of the material IM. Then, light is shone onto the material IM through the plate 9. The material IM hardens when exposed to light.

[0039] Next, as shown in Figure 4(c), the plate 9 is separated from the cured material IM on the semiconductor substrate 310. This planarization process forms a first film 350 having a highly flat upper surface. Here, the material IM can be, for example, a precursor of an energy-curable resin or a precursor of SOC (Spin On Carbon).

[0040] Next, as shown in Figure 4(d), a microlens 370 is formed on the upper surface of the first film 350. Since the microlens 370 is formed on the first film 350, which has high flatness, it is easier for it to exhibit the desired performance.

[0041] Figure 5 shows the configuration of the semiconductor device of this embodiment in a plan view with respect to the first surface P1. Note that the cross-sectional view along line AA' in Figure 5 corresponds to the configuration shown in Figure 4(d).

[0042] Note that a filter layer may be formed on the upper surface of the first film 350 before the step in which the microlens 370 shown in Figure 4(d) is formed. Figure 6 shows the step in which the filter layer is formed. As shown in Figure 6(a), after Figure 4(c), a filter layer 380 is formed on the upper surface of the first film 350. Next, as shown in Figure 6(b), a microlens 370 is formed on the upper surface of the filter layer 380. Since the filter layer 380 is formed on the first film 350 which has high flatness, it is easier to achieve the desired performance.

[0043] As described above, the method for manufacturing the semiconductor device of this embodiment makes it possible to improve the flatness of the upper part of the separation portion.

[0044] In this embodiment, when applying the material IM, the inkjet head is controlled so that fewer droplets are ejected from the upper part of the separation section 330 than from the upper part of the other parts. However, the embodiment is not limited to this. For example, when applying the material IM, droplets are applied uniformly to the separation section 330 and to a part other than the part in which the separation section 330 is provided. Then, a flat plate 9 is brought into contact with the material IM. This method also makes it possible to reduce the amount of material IM located above the separation section 330 to the amount of material IM located above the part other than the part in which the separation section 330 is provided. Such a method is also included in the step of applying a precursor so that the amount applied above the separation section 330 is less than that applied to other parts.

[0045] <Second Embodiment> A method for manufacturing the semiconductor device of this embodiment will now be described. Figures 7 and 8 are schematic diagrams illustrating the method for manufacturing the semiconductor device of the second embodiment. In the manufacturing method shown in Figures 7 and 8, a light-shielding portion 390 is formed on the upper part of a portion of the first film 350, compared to the manufacturing method described in Figure 4. Hereinafter, a detailed explanation of the same configuration and process as in the first embodiment will be omitted.

[0046] The process shown in Figures 7(a) to 7(c) is the same as that shown in Figures 4(a) to 4(c), so the explanation is omitted.

[0047] As shown in Figure 7(d), a light-shielding portion 390 is formed on the upper surface of the first film 350. The light-shielding portion 390 can be made of, for example, metal. The light-shielding portion 390 is made of a highly light-shielding metal material. For example, the light-shielding portion 390 can be made of a single metal material such as tungsten or aluminum. Alternatively, the light-shielding portion 390 can be a laminated film of aluminum and a barrier metal (e.g., titanium, cobalt, nickel, etc.), or a laminated film of tungsten and a barrier metal (e.g., titanium, cobalt, nickel, etc.).

[0048] The manufacturing method shown in Figure 8 applies the planarization method described in Figures 1 and 2 to the process after the light-shielding portion 390 is formed in Figure 7(d).

[0049] Figure 8(a) shows the application of the cured film material IM after the process described in Figure 7(d). The amount of material IM applied is adjusted to conform to the shape of the upper surface of the first film 350. Here, the amount of material IM applied to the upper part of the light-shielding portion 390 is reduced compared to the flat upper surface of the first film 350 surrounding it. This can be controlled, for example, by changing the number of droplets of the material IM precursor (liquid) ejected by the inkjet method, or by changing the size of the droplets. Note that the material IM used in Figure 7(a) and Figure 8(a) may be different or the same.

[0050] Next, as shown in Figure 8(b), if necessary, the plate 9 is brought into contact with the material IM to flatten the upper surface of the material IM. Then, light is shone onto the material IM through the plate 9. The material IM hardens when exposed to light.

[0051] Next, as shown in Figure 8(c), the plate 9 is separated from the cured material IM on the first film 350. This planarization process forms a second film 351 having a highly flat upper surface. Here, the material IM can be, for example, a precursor of an energy-curable resin or a precursor of SOC (Spin On Carbon).

[0052] Next, as shown in Figure 8(d), a microlens 370 is formed on the upper surface of the second film 351. Since the microlens 370 is formed on the second film 351, which has high flatness, it is easier for it to exhibit the desired performance.

[0053] Figure 9 shows the configuration of the semiconductor device of this embodiment in a plan view with respect to the first surface P1. Note that the cross-sectional view along the BB' line shown in Figure 9 corresponds to the configuration shown in Figure 8(d).

[0054] Furthermore, a filter layer may be formed on the upper surface of the second film 351 before the process in which the microlens 370 shown in Figure 8(d) is formed. Since the filter layer is formed on the upper surface of the second film 351, which has high flatness, it is easier to achieve the desired performance.

[0055] As described above, the method for manufacturing the semiconductor device of this embodiment makes it possible to improve the flatness of the upper part of the separation portion. Furthermore, it makes it possible to improve the flatness of the upper part of the light-shielding portion.

[0056] In this embodiment, when applying the material IM, the inkjet head is controlled so that fewer droplets are ejected from the upper part of the light-shielding section 390 than from the upper part of the other parts. However, the embodiment is not limited to this. For example, when applying the material IM, droplets are applied uniformly to the light-shielding section 390 and to a part other than the part where the light-shielding section 390 is provided. Then, a flat plate 9 is brought into contact with the material IM. This method also makes it possible to reduce the amount of material IM located above the light-shielding section 390 to the amount of material IM located above the part other than the part where the light-shielding section 390 is provided. Such a method is also included in the step of applying a precursor so that the amount applied above the light-shielding section 390 is less than that applied to other parts.

[0057] <Third Embodiment> The method for manufacturing the semiconductor device of this embodiment will now be described. Figure 10 is a schematic diagram illustrating the method for manufacturing the semiconductor device of the third embodiment. The manufacturing method shown in Figure 10 differs from the manufacturing method described in Figure 4 in the shape of the separation section. Hereafter, the same configurations and processes as in the first and second embodiments will not be described in detail.

[0058] Figure 10(a) shows the process of applying the curing film material IM after preparing the semiconductor substrate 310 on which the separation portion 331 is formed. In the first embodiment, the separation portion 330 has a convex structure with respect to the first surface P1, whereas in this embodiment, the separation portion 331 has a concave structure with respect to the first surface P1. A concave structure can also be described as a structure in which the uppermost part of the component included in the separation portion 330 is lower than the first surface P1, with respect to the second surface P2. The amount of material IM applied is adjusted according to the shape of the upper surface of the semiconductor substrate 310. Here, the amount of material IM applied to the upper part of the separation portion 331 is supplied so that it is greater than the amount applied to the flat upper surface of the semiconductor substrate 310 surrounding it. This can be controlled, for example, by changing the number of droplets of the precursor (liquid) of material IM ejected by an inkjet method, or by changing the size of the droplets.

[0059] Next, as shown in Figure 10(b), if necessary, the plate 9 is brought into contact with the material IM to flatten the upper surface of the material IM. Then, light is shone onto the material IM through the plate 9. The material IM hardens when exposed to light.

[0060] Next, as shown in Figure 10(c), the plate 9 is separated from the cured material IM on the semiconductor substrate 310. This planarization process forms a first film 350 having a highly flat upper surface. Here, the material IM can be, for example, a precursor of an energy-curable resin or a precursor of SOC (Spin On Carbon).

[0061] Next, as shown in Figure 10(d), a microlens 370 is formed on the upper surface of the first film 350. Since the microlens 370 is formed on the first film 350, which has high flatness, it is easier for it to exhibit the desired performance.

[0062] Furthermore, a filter layer may be formed on the upper surface of the first film 350 before the process of forming the microlens 370 shown in Figure 10(d). Since the filter layer is formed on the upper surface of the first film 350, which has high flatness, it is easier to achieve the desired performance.

[0063] As described above, the method for manufacturing the semiconductor device of this embodiment makes it possible to improve the flatness of the upper part of the separation portion.

[0064] In this embodiment, when applying the material IM, the inkjet head is controlled so that more droplets are ejected from the upper part of the separation section 331 than from the upper part of the other parts. However, the embodiment is not limited to this. For example, when applying the material IM, droplets are applied uniformly to the separation section 331 and to a part other than the part where the separation section 331 is provided. Then, a flat plate 9 is brought into contact with the material IM. This method also makes it possible to have more material IM located on the upper part of the separation section 331 than to be located on the upper part of the other parts. Such a method is also included in the step of applying a precursor so that the amount applied on the upper part of the separation section 331 is greater than that applied to other parts.

[0065] <Fourth Embodiment> The method for manufacturing the semiconductor device of this embodiment will now be described. Figure 11 is a schematic diagram illustrating the method for manufacturing the semiconductor device of the fourth embodiment. The manufacturing method shown in Figure 11 differs from the manufacturing method described in Figures 4 and 10 in the shape of the separation section. Hereafter, the same configurations and processes as in the first to third embodiments will not be described in detail.

[0066] Figure 11(a) shows the process of preparing a semiconductor substrate 310 on which separation portions 330 and 331 are formed, followed by the application of the curing film material IM. Note that separation portion 330 has a convex structure (first portion) relative to the first surface P1, while separation portion 331 has a concave structure (second portion) relative to the first surface P1. Thus, this embodiment forms separation portions of different shapes. Note that the arrangement of separation portions 330 and 331 is not limited to the configuration shown in Figure 11. For example, separation portions 330 and 331 may be arranged alternately along the first surface P1, or multiple separation portions 330 and multiple separation portions 331 may be arranged adjacent to each other.

[0067] The amount of material IM applied is adjusted according to the shape of the upper surface of the semiconductor substrate 310. Here, the amount of material IM applied to the upper part of the separation section 330 is less than that applied to the flat upper surface of the semiconductor substrate 310 around it. Also, the amount of material IM applied to the upper part of the separation section 331 is greater than that applied to the flat upper surface of the semiconductor substrate 310 around it. This can be controlled, for example, by changing the number of droplets of the precursor (liquid) of the material IM ejected by the inkjet method, or by changing the size of the droplets.

[0068] Next, as shown in Figure 11(b), if necessary, the plate 9 is brought into contact with the material IM to flatten the upper surface of the material IM. Then, light is shone onto the material IM through the plate 9. The material IM hardens when exposed to light.

[0069] Next, as shown in Figure 11(c), the plate 9 is separated from the cured material IM on the semiconductor substrate 310. This planarization process forms a first film 350 having a highly flat upper surface. Here, the material IM can be, for example, a precursor of an energy-curable resin or a precursor of SOC (Spin On Carbon).

[0070] Next, as shown in Figure 11(d), a microlens 370 is formed on the upper surface of the first film 350. Since the microlens 370 is formed on the first film 350, which has high flatness, it is easier for it to exhibit the desired performance.

[0071] Furthermore, a filter layer may be formed on the upper surface of the first film 350 before the process in which the microlens 370 shown in Figure 11(d) is formed. Since the filter layer is formed on the upper surface of the first film 350, which has high flatness, it is easier to achieve the desired performance.

[0072] As described above, the method for manufacturing the semiconductor device of this embodiment makes it possible to improve the flatness of the upper part of the separation portion.

[0073] In this embodiment, when applying the material IM, the inkjet head is controlled so that fewer droplets are ejected from the upper part of the separation section 330 than from the upper part of the other parts. However, the embodiment is not limited to this. For example, when applying the material IM, droplets are applied uniformly to the separation section 330 and to a part other than the part in which the separation section 330 is provided. Then, a flat plate 9 is brought into contact with the material IM. This method also makes it possible to reduce the amount of material IM located above the separation section 330 to the amount of material IM located above the part other than the part in which the separation section 330 is provided. Such a method is also included in the step of applying a precursor so that the amount applied above the separation section 330 is less than that applied to other parts.

[0074] In this embodiment, when applying the material IM, the inkjet head is controlled so that more droplets are ejected from the upper part of the separation section 331 than from the upper part of the other parts. However, the embodiment is not limited to this. For example, when applying the material IM, droplets are applied uniformly to the separation section 331 and to a part other than the part where the separation section 331 is provided. Then, a flat plate 9 is brought into contact with the material IM. This method also makes it possible to have more material IM located on the upper part of the separation section 331 than to be located on the upper part of the other parts. Such a method is also included in the step of applying a precursor so that the amount applied on the upper part of the separation section 331 is greater than that applied to other parts.

[0075] <Fifth Embodiment> The method for manufacturing the semiconductor device of this embodiment will now be described. Figure 12 is a schematic diagram illustrating the method for manufacturing the semiconductor device of the fifth embodiment. The manufacturing method shown in Figure 12 differs from the manufacturing method described in Figure 11 in the positional relationship between the photoelectric conversion unit and the microlens and the shape of the separation unit. Hereafter, the same configurations and processes as in the first to fourth embodiments will not be described in detail.

[0076] Figure 12(a) shows the process of preparing a semiconductor substrate 310 on which separation sections 331 and 332 are formed, followed by the application of a curing film material IM. Here, the pixel 320 has a photoelectric conversion section 321 and a photoelectric conversion section 322. The photoelectric conversion section 321 and the photoelectric conversion section 322 each generate an electric charge corresponding to the incident light. Focus adjustment may be performed using signals based on the charge incident on the photoelectric conversion section 321 and signals based on the charge incident on the photoelectric conversion section 322. The separation sections 331 and 332 are formed by grooves created by trenches extending from the first surface P1. The distance between the bottom (lower surface) of the separation section 332 and the second surface P2 is greater than the distance between the bottom (lower surface) of the separation section 331 and the second surface P2. The photoelectric conversion units 321 and 322 of one pixel 320 are separated by the separation unit 332, and the photoelectric conversion units 321 and 322 of adjacent different pixels are separated by the separation unit 331. The separation unit 331 has a concave structure (second part) with respect to the first surface P1, while the separation unit 332 has a convex structure (first part) with respect to the first surface P1.

[0077] The amount of material IM applied is adjusted according to the shape of the upper surface of the semiconductor substrate 310. Here, the amount of material IM applied to the upper part of the separation section 332 is less than that applied to the flat upper surface of the semiconductor substrate 310 around it. Also, the amount of material IM applied to the upper part of the separation section 331 is greater than that applied to the flat upper surface of the semiconductor substrate 310 around it. This can be controlled, for example, by changing the number of droplets of the material IM precursor (liquid) ejected by the inkjet method, or by changing the size of the droplets.

[0078] Next, as shown in Figure 12(b), if necessary, the plate 9 is brought into contact with the material IM to flatten the upper surface of the material IM. Then, light is shone onto the material IM through the plate 9. The material IM hardens when exposed to light.

[0079] Next, as shown in Figure 12(c), the plate 9 is separated from the cured material IM on the semiconductor substrate 310. This planarization process forms a first film 350 having a highly flat upper surface. Here, the material IM can be, for example, a precursor of an energy-curable resin or a precursor of SOC (Spin On Carbon).

[0080] Next, as shown in Figure 12(d), a microlens 370 is formed on the upper surface of the first film 350 so as to cover the photoelectric conversion unit 321 and the photoelectric conversion unit 322 separated by the separation unit 332. Since the microlens 370 is formed on the first film 350, which has high flatness, it is easier to achieve the desired performance.

[0081] Note that a filter layer may be formed on the upper surface of the first film 350 before the process of forming the microlens 370 shown in Figure 11(d). In this case, it is preferable that the filter layers corresponding to the photoelectric conversion units 321 and 322 separated by the separation unit 332 are the same color. Since the filter layer is formed on the upper surface of the first film 350, which has high flatness, it is easier to achieve the desired performance.

[0082] As described above, the method for manufacturing the semiconductor device of this embodiment makes it possible to improve the flatness of the upper part of the separation portion.

[0083] In this embodiment, when applying the material IM, the inkjet head is controlled so that fewer droplets are ejected from the upper part of the separation section 332 than from the upper part of the other parts. However, the embodiment is not limited to this. For example, when applying the material IM, droplets are applied uniformly to the separation section 332 and to a part other than the part where the separation section 332 is provided. Then, a flat plate 9 is brought into contact with the material IM. This method also makes it possible to reduce the amount of material IM located above the separation section 332 compared to the amount of material IM located above the part other than the part where the separation section 332 is provided. Such a method is also included in the step of applying a precursor so that the amount applied above the separation section 332 is less than that applied to other parts.

[0084] In this embodiment, when applying the material IM, the inkjet head is controlled so that more droplets are ejected from the upper part of the separation section 331 than from the upper part of the other parts. However, the embodiment is not limited to this. For example, when applying the material IM, droplets are applied uniformly to the separation section 331 and to a part other than the part where the separation section 331 is provided. Then, a flat plate 9 is brought into contact with the material IM. This method also makes it possible to have more material IM located on the upper part of the separation section 331 than to be located on the upper part of the other parts. Such a method is also included in the step of applying a precursor so that the amount applied on the upper part of the separation section 331 is greater than that applied to other parts.

[0085] Note that the shapes of the separation portion 331 and separation portion 332 are not limited to the configuration shown in Figure 12. For example, the separation portion 331 may have a convex structure with respect to the first surface P1 (similar in shape to the separation portion 330), or the separation portion 332 may have a concave structure with respect to the first surface P1. In that case, the amount of material IM supplied to the upper part of the separation portion 332 is greater than the amount supplied to the flat upper surface of the semiconductor substrate 310 surrounding it, and the amount of material IM supplied to the upper part of the separation portion 331 is less than the amount supplied to the flat upper surface of the semiconductor substrate 310 surrounding it.

[0086] <Sixth Embodiment> This embodiment describes application examples using semiconductor devices manufactured by the manufacturing methods of the first to fifth embodiments. Let the semiconductor device 910 be, for example, a photoelectric conversion sensor.

[0087] Figure 13(a) is a schematic diagram illustrating an application example, device 9191. Device 9191 has a semiconductor device 930. The semiconductor device 930 includes a semiconductor device 910 and a package 920 that houses the semiconductor device 910. The semiconductor device 910 may be manufactured by a manufacturing method of another embodiment. The package 920 may include a substrate on which the semiconductor device 910 is fixed and a lid, such as glass, facing the semiconductor device 910. The package 920 may further include bonding members such as bonding wires or bumps that connect terminals provided on the substrate and terminals provided on the semiconductor device 910.

[0088] The device 9191 may include at least one of the following: an optical device 940, a control device 950, a processing device 960, a display device 970, a storage device 980, and a mechanical device 990. The optical device 940 corresponds to the semiconductor device 930. The optical device 940 is, for example, a lens, shutter, or mirror, and includes an optical system that directs light to the semiconductor device 930. The control device 950 controls the semiconductor device 930. The control device 950 is, for example, a semiconductor device such as an ASIC.

[0089] The processing unit 960 processes the signals output from the semiconductor device 930. The processing unit 960 is a semiconductor device such as a CPU or ASIC that constitutes an AFE (analog front end) or DFE (digital front end). The display device 970 is an EL display device or liquid crystal display device that displays the information (image) obtained by the semiconductor device 930. The storage device 980 is a magnetic device or semiconductor device that stores the information (image) obtained by the semiconductor device 930. The storage device 980 is a volatile memory such as SRAM or DRAM, or a non-volatile memory such as flash memory or a hard disk drive.

[0090] The mechanical device 990 has movable parts or propulsion parts such as motors and engines. The device 9191 displays signals output from the semiconductor device 930 on the display device 970 or transmits them to the outside using a communication device (not shown) provided in the device 9191. For this purpose, it is preferable that the device 9191 further includes a storage device 980 and a processing device 960, separate from the memory circuits and arithmetic circuits of the semiconductor device 930. The mechanical device 990 may be controlled based on signals output from the semiconductor device 930.

[0091] Furthermore, the device 9191 is suitable for electronic devices such as information terminals with shooting capabilities (e.g., smartphones and wearable devices) and cameras (e.g., interchangeable lens cameras, compact cameras, video cameras, and surveillance cameras). In a camera, the mechanical device 990 can drive components of the optical device 940 for zooming, focusing, and shutter operation. Alternatively, the mechanical device 990 in a camera can move the semiconductor device 930 for vibration damping.

[0092] Furthermore, the device 9191 may be a transport device such as a vehicle, ship, or aircraft. The mechanical device 990 in the transport device may be used as a mobile device. The device 9191 as a transport device is suitable for transporting the semiconductor device 930 or for assisting and / or automating driving (operation) through its imaging function. The processing device 960 for assisting and / or automating driving (operation) can perform processing to operate the mechanical device 990 as a mobile device based on information obtained from the semiconductor device 930. Alternatively, the device 9191 may be a medical device such as an endoscope, a measuring instrument such as a distance sensor, an analytical instrument such as an electron microscope, an office machine such as a copier, or an industrial machine such as a robot.

[0093] According to the embodiments described above, it is possible to obtain good pixel characteristics. Therefore, the value of the semiconductor device can be increased. Increasing value here means at least one of the following: addition of functions, improvement of performance, improvement of characteristics, improvement of reliability, improvement of manufacturing yield, reduction of environmental impact, cost reduction, miniaturization, and weight reduction.

[0094] Therefore, by using the semiconductor device 930 according to this embodiment in the device 9191, the value of the device can also be improved. For example, by mounting the semiconductor device 930 on a transport device, excellent performance can be obtained when taking external images of the transport device or measuring the external environment. Therefore, when manufacturing and selling transport devices, deciding to mount the semiconductor device according to this embodiment on the transport device is advantageous in improving the performance of the transport device itself. In particular, the semiconductor device 930 is suitable for transport devices that use information obtained from the semiconductor device to assist in driving and / or perform automated driving.

[0095] Next, as another application example, we will describe a mobile device. Figure 13(b) shows an example of a photoelectric conversion system for an in-vehicle camera. The photoelectric conversion system 80 has a semiconductor device 800. The semiconductor device 800 is, for example, a photoelectric conversion device (imaging device). The photoelectric conversion system 80 has an image processing unit 801 that performs image processing on a plurality of image data acquired by the semiconductor device 800, and a parallax acquisition unit 802 that calculates parallax (phase difference of parallax image) from the plurality of image data acquired by the photoelectric conversion system 80. Here, the photoelectric conversion system 80 may include an optical system (not shown) that guides light to the semiconductor device 800, such as a lens, shutter, or mirror. Also, a plurality of photoelectric conversion units that are substantially conjugate to the pupil of the optical system may be arranged in pixels of the semiconductor device 800. For example, a plurality of photoelectric conversion units substantially conjugate to the pupil may be arranged corresponding to one microlens. Multiple photoelectric conversion units receive light beams that have passed through different positions in the pupil of the optical system, and the semiconductor device 800 outputs image data corresponding to the light beams that have passed through different positions. The parallax acquisition unit 802 may then calculate the parallax using the output image data. The photoelectric conversion system 80 also includes a distance acquisition unit 803 that calculates the distance to an object based on the calculated parallax, and a collision determination unit 804 that determines whether or not there is a possibility of collision based on the calculated distance. Here, the parallax acquisition unit 802 and the distance acquisition unit 803 are examples of distance information acquisition means that acquire distance information to an object. That is, distance information is information related to parallax, defocus amount, distance to an object, etc. The collision determination unit 804 may use any of this distance information to determine the possibility of collision. Note that the distance information may be acquired by ToF (Time of Flight). The distance information acquisition means may be implemented by specially designed hardware or by a software module. Furthermore, it may be implemented using FPGAs (Field Programmable Gate Arrays) or ASICs (Application Specific Integrated Circuits), or a combination thereof.

[0096] The photoelectric conversion system 80 is connected to the vehicle information acquisition device 810 and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. The photoelectric conversion system 80 is also connected to the control ECU 820, which is a control device that outputs a control signal to generate braking force on the vehicle based on the judgment result of the collision judgment unit 804. The photoelectric conversion system 80 is also connected to the warning device 830, which issues a warning to the driver based on the judgment result of the collision judgment unit 804. For example, if the collision judgment result of the collision judgment unit 804 indicates a high probability of collision, the control ECU 820 performs vehicle control to avoid a collision or mitigate damage by applying the brakes, releasing the accelerator, or suppressing engine output. The warning device 830 warns the user by sounding an alarm, displaying warning information on a screen such as a car navigation system, or vibrating the seat belt or steering wheel.

[0097] In this embodiment, the photoelectric conversion system 80 images the area around the vehicle, for example, in front of or behind it. Figure 13(c) shows the photoelectric conversion system 80 when imaging the area in front of the vehicle (imaging range 850). The vehicle information acquisition device 810 sends instructions to the photoelectric conversion system 80 or the semiconductor device 800. This configuration can further improve the accuracy of distance measurement.

[0098] The above example describes control to prevent collisions with other vehicles, but it can also be applied to control systems that automatically follow other vehicles or control systems that automatically stay within their lanes. Furthermore, the photoelectric conversion system 80 can be applied not only to vehicles such as automobiles, but also to mobile bodies (mobile devices) such as ships, aircraft, or industrial robots. This mobile body mainly includes a drive force generation unit that generates the driving force used for the movement of the mobile body, and one or both of a rotating body mainly used for the movement of the mobile body. The drive force generation unit may be an engine, motor, etc. The rotating body may be a tire, wheel, ship's screw, propeller, etc. In addition, it can be applied not only to mobile bodies, but also to a wide range of devices that utilize object recognition, such as intelligent transportation systems (ITS).

[0099] The equipment of this embodiment may be transportation equipment such as vehicles, ships, or aircraft. Mechanical devices in transportation equipment can be used as mobile devices. Equipment as transportation equipment is suitable for transporting semiconductor devices or for assisting and / or automating driving (piloting) through imaging functions. The processing device for assisting and / or automating driving (piloting) can perform processing to operate the mechanical device as a mobile device based on information obtained from the semiconductor device.

[0100] In this embodiment, a photoelectric conversion device was used as an example of a semiconductor device, but other semiconductor devices may be used, or both may be used.

[0101] Furthermore, the disclosure of this embodiment includes the following configuration.

[0102] (Method 1) A method for manufacturing a semiconductor device comprising a substrate having a first surface, a second surface facing the first surface, and a plurality of semiconductor regions disposed between the first surface and the second surface, the method comprising the steps of: preparing the substrate having a trench structure extending from the first surface and a member provided inside the trench structure, and having a separation portion that separates the plurality of semiconductor regions; and applying a precursor to the substrate such that the amount applied to the upper part of the separation portion differs from that applied to the rest of the substrate, thereby forming a first film having a flat upper surface.

[0103] (Method 2) The method for manufacturing a semiconductor device according to Method 1, characterized in that, in the step of forming the first film, the separation portion has a convex structure with respect to the first surface, and the precursor is applied to the substrate such that the amount applied to the upper part of the separation portion is less than that applied to the other parts.

[0104] (Method 3) A method for manufacturing a semiconductor device according to method 1 or 2, characterized in that, in the step of forming the first film, the separation portion has a concave structure with respect to the first surface, and the precursor is applied to the substrate such that the amount applied to the upper part of the separation portion is greater than that applied to other parts.

[0105] (Method 4) A method for manufacturing a semiconductor device according to any one of methods 1 to 3, characterized in that, in the step of forming the first film, the upper surface of the precursor is flattened and cured to have a flat upper surface.

[0106] (Method 5) A method for manufacturing a semiconductor device according to any one of methods 1 to 4, characterized in that, in the step of forming the first film, a superstraight is brought into contact with the precursor.

[0107] (Method 6) A method for manufacturing a semiconductor device according to any one of methods 1 to 5, characterized in that, in the step of forming the first film, the superstraight is brought into contact with the precursor and the precursor is cured.

[0108] (Method 7) A method for manufacturing a semiconductor device according to any one of methods 1 to 6, characterized in that the substrate includes a photoelectric conversion unit that generates an electric charge corresponding to light incident from the first surface, and in a plan view with respect to the first surface, the photoelectric conversion unit is arranged between a part of the separation unit and another part of the separation unit.

[0109] (Method 8) A method for manufacturing a semiconductor device according to any one of methods 1 to 7, characterized in that, in the step of forming the first film, the precursor is applied in such a way that the amount applied to the upper part of the photoelectric conversion part is different from that applied to the upper part of the separation part.

[0110] (Method 9) A method for manufacturing a semiconductor device according to any one of methods 1 to 8, characterized in that, in the step of forming the first film, the separation portion has a convex structure with respect to the first surface, and the precursor is applied such that the amount applied to the upper part of the photoelectric conversion portion is greater than the amount applied to the upper part of the separation portion.

[0111] (Method 10) A method for manufacturing a semiconductor device according to any one of methods 1 to 9, characterized in that, in the step of forming the first film, the separation portion has a concave structure with respect to the first surface, and the precursor is applied such that the amount applied to the upper part of the photoelectric conversion portion is less than the amount applied to the upper part of the separation portion.

[0112] (Method 11) A method for manufacturing a semiconductor device according to any one of methods 1 to 10, further comprising the steps of: forming a light-shielding portion on a portion of the first film at a position overlapping with the separation portion; and forming a second film having a flat upper surface by applying a precursor on the first film such that the amount applied on the upper part of the light-shielding portion is less than that applied on the other parts.

[0113] (Method 12) The method for manufacturing a semiconductor device according to any one of methods 1 to 11, wherein the separation portion has a first portion that is convex with respect to the first surface and a second portion that is concave with respect to the first surface, and in the step of forming the first film, the precursor is applied such that the amount applied to the upper part of the first portion is less than the amount applied to the upper part of the second portion.

[0114] (Method 13) A method for manufacturing a semiconductor device according to any one of methods 1 to 12, characterized in that the distance between the bottom of the first portion and the second surface is greater than the distance between the bottom of the second portion and the second surface.

[0115] (Method 14) A method for manufacturing a semiconductor device according to any one of methods 1 to 13, further comprising the step of forming a microlens on the first film, wherein in the step of forming the microlens, one microlens is formed so as to cover the plurality of semiconductor regions separated by the first portion.

[0116] (Method 15) A method for manufacturing a semiconductor device according to any one of methods 1 to 14, characterized in that, in the step of forming the first film, the first film is formed of a material different from the separation portion.

[0117] (Method 16) A method for manufacturing a semiconductor device according to any one of methods 1 to 15, characterized in that it comprises a plurality of wiring layers, and the second surface is disposed between the first surface and the plurality of wiring layers.

[0118] (Method 17) A method for manufacturing a semiconductor device according to any one of methods 1 to 16, further comprising the step of forming a microlens on the first film.

[0119] (Method 18) A method for manufacturing a semiconductor device according to any one of methods 1 to 17, further comprising the step of forming a filter layer on the first film.

[0120] (Method 19) A method for manufacturing a semiconductor device according to any one of methods 1 to 18, further comprising the steps of forming a filter layer on the first film and forming a microlens on the filter layer. [Explanation of symbols]

[0121] 310 Semiconductor substrates 330 Separation section 350 First membrane P1 First side P2 Second side

Claims

1. A method for manufacturing a semiconductor device comprising a substrate having a first surface, a second surface facing the first surface, and a plurality of semiconductor regions disposed between the first surface and the second surface, A step of preparing a substrate having a trench structure extending from the first surface and a member provided inside the trench structure, and having a separation portion that separates the plurality of semiconductor regions, A method for manufacturing a semiconductor device, comprising the steps of: applying a precursor to the substrate such that the amount applied to the upper part of the separation portion differs from that applied to other parts, thereby forming a first film having a flat upper surface.

2. The method for manufacturing a semiconductor device according to claim 1, characterized in that, in the step of forming the first film, the separation portion has a convex structure with respect to the first surface, and the precursor is applied to the substrate such that the amount applied to the upper part of the separation portion is less than that applied to the other parts.

3. The method for manufacturing a semiconductor device according to claim 1, characterized in that, in the step of forming the first film, the separation portion has a concave structure with respect to the first surface, and the precursor is applied to the substrate such that the amount applied to the upper part of the separation portion is greater than that applied to other parts.

4. The method for manufacturing a semiconductor device according to claim 1, characterized in that, in the step of forming the first film, the upper surface of the precursor is flattened and cured to have a flat upper surface.

5. The method for manufacturing a semiconductor device according to claim 1, characterized in that, in the step of forming the first film, a superstraight is brought into contact with the precursor.

6. The method for manufacturing a semiconductor device according to claim 5, characterized in that, in the step of forming the first film, the precursor is cured while the superstraight is in contact with the precursor.

7. The substrate includes a photoelectric conversion unit that generates an electric charge corresponding to light incident from the first surface. The method for manufacturing a semiconductor device according to claim 1, characterized in that, in a plan view with respect to the first surface, the photoelectric conversion unit is disposed between a part of the separation unit and another part of the separation unit.

8. The method for manufacturing a semiconductor device according to claim 7, characterized in that, in the step of forming the first film, the precursor is applied in such a way that the amount applied to the upper part of the photoelectric conversion part is different from that applied to the upper part of the separation part.

9. The method for manufacturing a semiconductor device according to claim 7, characterized in that, in the step of forming the first film, the separation portion has a convex structure with respect to the first surface, and the precursor is applied such that the amount applied to the upper part of the photoelectric conversion portion is greater than the amount applied to the upper part of the separation portion.

10. The method for manufacturing a semiconductor device according to claim 7, characterized in that, in the step of forming the first film, the separation portion has a concave structure with respect to the first surface, and the precursor is applied such that the amount applied to the upper part of the photoelectric conversion portion is less than the amount applied to the upper part of the separation portion.

11. A step of forming a light-shielding portion on a portion of the first film at a position overlapping with the separation portion, The method for manufacturing a semiconductor device according to claim 1, further comprising the step of applying a precursor to the first film such that the amount applied to the upper part of the light-shielding portion is less than that applied to other parts, thereby forming a second film having a flat upper surface.

12. The separation portion has a first portion that is convex with respect to the first surface and a second portion that is concave with respect to the first surface. The method for manufacturing a semiconductor device according to claim 1, characterized in that, in the step of forming the first film, the precursor is applied such that the amount applied to the upper part of the first portion is less than the amount applied to the upper part of the second portion.

13. The method for manufacturing a semiconductor device according to claim 12, characterized in that the distance between the bottom of the first portion and the second surface is greater than the distance between the bottom of the second portion and the second surface.

14. The process further comprises the step of forming microlenses on the first film, The method for manufacturing a semiconductor device according to claim 13, characterized in that, in the step of forming the microlens, one microlens is formed so as to cover the plurality of semiconductor regions separated by the first portion.

15. The method for manufacturing a semiconductor device according to claim 1, characterized in that, in the step of forming the first film, the first film is formed of a material different from the separation portion.

16. A method for manufacturing a semiconductor device according to claim 1, characterized in that it comprises a plurality of wiring layers, and the second surface is disposed between the first surface and the plurality of wiring layers.

17. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of forming a microlens on the first film.

18. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of forming a filter layer on the first film.

19. A step of forming a filter layer on the first film, The method for manufacturing a semiconductor device according to claim 1, further comprising the step of forming a microlens on the filter layer.

Images