Apparatus for testing integrated circuits, method for manufacturing the same, and method for testing integrated circuits

Abstract

The present invention provides an inspection apparatus and inspection method for integrated circuits using an electron beam probe that achieves both high precision and high speed, as well as a method for manufacturing the same, and an inspection method that enables signal driving. [Solution] In an integrated circuit inspection device that measures the potential distribution within an integrated circuit by irradiating an electrode pad (26) of an integrated circuit (25) to be inspected with an electron beam (27) and detecting secondary electrons (28) generated from the irradiated area, an integrated field emission / detection element (24) is constructed by arranging a field emission element (1), which is the source of the electron beam, and a detection element (23) for detecting secondary electrons adjacent to each other on a substrate (21). Furthermore, multiple of these integrated field emission / detection elements (24) are repeatedly arranged in a horizontal row or in a vertical and horizontal array, and each can be controlled independently.

Description

Technical Field

[0001] The present invention relates to an inspection apparatus for an integrated circuit, a manufacturing method thereof, and an inspection method for an integrated circuit.

Background Art

[0002] With the increase in the scale of semiconductor integrated circuits, it has become necessary to develop a method for testing large-scale integrated circuits with high definition and high speed. Conventionally, as a method of applying an electrical signal to an integrated circuit and measuring its operation, there are a method of directly applying a probe (mechanical probe) to an electrode pad of the integrated circuit to make electrical contact, and a method of shaping an electron beam and irradiating the target non-contact (electron beam probe) (see, for example, Patent Document 1 and Non-Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Non-Patent Documents

[0004]

Non-Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] Chiplet technology, which integrates integrated circuits into multiple functional block chips and stacks them by bonding, rather than integrating them as a complete circuit on a single chip, is attracting attention. Currently, microbumps are the most advanced technology for bonding the electrode pads of stacked chips, but the pitch between electrode pads that can be handled is limited to about 5 μm. Therefore, if even narrower pitches are required, it will be necessary to use hybrid bonding, which can handle submicron pitches, instead of microbumps. In addition, with chiplet technology, if even one of the stacked chips is defective, the entire product becomes defective, and the yield decreases as the number of stacked chips increases (for example, stacking two chips with an 80% yield will reduce the yield to nearly 60%). Therefore, it is necessary to perform electrical testing on each chip before bonding and conduct pre-bonding inspections to eliminate defective chips.

[0006] In microbump bonding, even if there are some scratches on the surface of the electrode pad, it is not a problem because the scratches are filled in by part of the bump. However, in hybrid bonding, where electrode pads are directly joined together, even slight scratches on the surface of the electrode pad may prevent a good electrical connection from being achieved after bonding. Therefore, even after pre-bonding inspection, the surface of the electrode pad must be kept smooth. In this respect, when testing with a mechanical probe, it is an "contact measurement" and scratches on the electrode pad are unavoidable. However, since electron beam probes are an "non-contact measurement" method, they are suitable for use in situations where scratches on the electrode pad are unacceptable, such as in hybrid bonding. In addition to electron beam probes, there are also RF probes using wireless communication as a "non-contact measurement" test method, but these incur the overhead of creating a communication circuit on the chip and cannot accommodate narrow pitches.

[0007] However, conventional electron beam probes have a problem in that, because electrons are emitted from a single electron source, focusing the electron beam to achieve high resolution increases the time required to irradiate a large area inversely, meaning that high resolution and high speed of inspection cannot be achieved simultaneously. In addition, signal driving is necessary for pre-joining inspection, but inspection methods using electron beam probes have the problem that signal driving is not possible because the probe is non-contact.

[0008] Therefore, the present invention aims to provide an inspection apparatus and inspection method for integrated circuits using an electron beam probe that achieves both high resolution and high speed, a method for manufacturing the same, and an inspection method that enables signal driving. [Means for solving the problem]

[0009] An integrated circuit inspection apparatus according to one aspect of the present invention is an integrated circuit inspection apparatus that irradiates an electrode pad of an integrated circuit to be inspected with an electron beam and detects secondary electrons generated from the irradiated area to measure the potential distribution within the integrated circuit, wherein an integrated field emission / detection element is constructed by arranging a field emission element, which is an electron beam emission source, and a detection element, which detects secondary electrons, adjacent to each other on a substrate.

[0010] In this embodiment, the field emission element may be a so-called spint-type field emission element, which has a cone-shaped metal spire structure on top of which a perforated extraction electrode is positioned with the center line of the metal spire structure aligned with the metal spire structure, and the detection element may be a stopping field analyzer.

[0011] According to this embodiment, a field emission element and a detection element of minute dimensions can be arranged adjacently with a narrow pitch and good controllability.

[0012] In this embodiment, the integrated field emission / detection element may be configured by arranging one detection element in relation to one field emission element, or by arranging multiple detection elements in relation to multiple field emission elements.

[0013] According to these embodiments, by arranging a field emission element and a detection element adjacent to each other to form an integrated field emission / detection element, high-resolution measurements can be performed. Furthermore, by configuring the integrated field emission / detection element by arranging multiple detection elements corresponding to multiple field emission elements, the intensity of the irradiated electron beam and the detected secondary electrons can be increased.

[0014] Furthermore, in these embodiments, the integrated field emission / detection elements may be arranged in a horizontal row or in a vertical and horizontal array, and each of the multiple integrated field emission / detection elements may be independently controllable.

[0015] According to these embodiments, electron beam irradiation and secondary electron detection can be performed over a wide area. Furthermore, by independently controlling multiple integrated field emission / detection elements, individual integrated field emission / detection elements arranged repeatedly in a horizontal row or vertical and horizontal array can be matched to each of the multiple electrode pads of the integrated circuit under inspection, allowing for simultaneous and parallel inspection. In addition, multiple adjacent integrated field emission / detection elements, each independently controllable, can be operated collectively according to the inspection area, thereby flexibly accommodating differences in the size and pitch of the multiple electrode pads of the integrated circuit under inspection.

[0016] In an embodiment where the field emission element is a spint-type field emission element and the detection element is a stopped-field type analyzer, an electronic circuit may be further formed on the substrate.

[0017] According to this embodiment, an integrated field emission detection element and its electronic circuits such as control circuits and test circuits can be integrated onto a single chip.

[0018] A method for manufacturing an inspection apparatus for an integrated circuit according to an aspect of the present invention is a method for manufacturing an inspection apparatus for an integrated circuit that irradiates an electrode pad of an integrated circuit to be inspected with an electron beam, detects secondary electrons generated from the irradiated location, and measures the potential distribution within the integrated circuit. The method includes preparing a lower structure on a substrate in which a formation region of a field emission element serving as a source of the electron beam and a formation region of a detection element for detecting secondary electrons are arranged adjacent to each other; stacking an insulating layer and a conductive layer in this order on the lower structure; forming a plurality of openings that penetrate both the conductive layer and the insulating layer in the formation regions of the field emission element and the detection element to expose the lower structure; forming metal spire structures on the lower structure within the plurality of openings; and selectively removing the metal spire structure in the formation region of the detection element.

[0019] According to this aspect, it is possible to manufacture an inspection apparatus for an integrated circuit in which a field emission element and a detection element are integrated on the same substrate while sharing most of the manufacturing process.

[0020] An inspection method for an integrated circuit according to an aspect of the present invention is an inspection method for an integrated circuit that irradiates an electrode pad of an integrated circuit to be inspected with an electron beam, detects secondary electrons generated from the irradiated location, and measures the potential distribution within the integrated circuit. In this method, a field emission element is used as a source of the electron beam, and signal driving during inspection is performed by changing an acceleration voltage applied to an emission electrode of the field emission element.

[0021] According to this aspect, by controlling the acceleration voltage, it is possible to control the current flowing between the electrode pad and the field emission element (probe) during inspection and perform signal driving.

Effects of the Invention

[0022] According to the present invention, in an inspection apparatus and an inspection method for an integrated circuit using an electron beam probe, it is possible to provide an inspection apparatus and a manufacturing method thereof that achieve both high definition and high speed, and an inspection method capable of signal driving.

Brief Description of the Drawings

[0023] [Figure 1] It is a drawing (top view) showing the structure of the field emission device. [Figure 2] It is a drawing (cross-sectional view) showing the structure of the field emission device. [Figure 3] It is a drawing showing a photograph of the fabricated field emission device. [Figure 4A] It is a drawing (part 1) showing the manufacturing process of the field emission device. [Figure 4B] It is a drawing (part 2) showing the manufacturing process of the field emission device. [Figure 4C] It is a drawing (part 3) showing the manufacturing process of the field emission device. [Figure 5] It is a drawing showing the structure of the integrated field emission and detection device. [Figure 6] It is a drawing (top view) showing the structure of the integrated field emission and detection device. [Figure 7] It is a drawing (cross-sectional view) showing the structure of the integrated field emission and detection device. [Figure 8A] It is a drawing (part 1) showing the manufacturing process of the integrated field emission and detection device. [Figure 8B] It is a drawing (part 2) showing the manufacturing process of the integrated field emission and detection device. [Figure 8C] It is a drawing (part 3) showing the manufacturing process of the integrated field emission and detection device. [Figure 9] It is a drawing showing the circuit diagram of the current control circuit. [Figure 10] It is a drawing showing the relationship between the acceleration voltage of primary electrons and the secondary electron emission efficiency in the inspection method of integrated circuits by an electron beam probe. [Figure 11] It is a drawing showing the movement of charges in the low acceleration voltage region in the inspection method of integrated circuits by an electron beam probe. [Figure 12] It is a drawing showing the movement of charges in the high acceleration voltage region in the inspection method of integrated circuits by an electron beam probe.

Embodiments for Carrying Out the Invention

[0024] A preferred embodiment of the present invention will be described with reference to the attached drawings. In each drawing, components denoted by the same reference numerals have the same or similar configuration.

[0025] [Reference example] First, using Figures 1 to 4C, we will explain a reference example of a field emission element that is the premise of the present invention.

[0026] This reference example uses a field emitter array (FEA), which consists of multiple field emission elements arranged side-by-side, as the electron beam emission source in an integrated circuit inspection device that measures the potential distribution within the integrated circuit by irradiating the electrode pads of the integrated circuit under inspection with an electron beam and detecting the secondary electrons generated from the irradiated area. While various types of FEAs are known, such as those with a spire structure formed by etching on the surface of a silicon substrate, those using carbon nanotubes, and those using MOS structures, this reference example uses a so-called spindt type FEA. Figures 1 and 2 show the structure of the spindt type FEA in this reference example. Figure 1 is a top view, and Figure 2 is a POQ cross-sectional view of the structure in Figure 1. Figure 3 is a photograph of the actually fabricated spindt type FEA.

[0027] The spint-type FEA in this reference example may be configured such that, as shown in Figures 1 and 2, a cone-shaped metal spire structure (cathode electrode) 2 (for example, approximately 300 nm in both diameter and height) is densely integrated on the emission electrode 4 via a resistive layer 5, at a pitch several times the size of the spire structure. A perforated extraction electrode (gate electrode) 3 is formed on top of each metal spire structure (cathode electrode) 2, aligned with the center line of the metal spire structure (cathode electrode) 2. Here, one metal spire structure (cathode electrode) 2 corresponds to one field emission element 1. When a voltage is applied between the emission electrode 4 and the extraction electrode (gate electrode) 3 to create an electric field, electrons are supplied to the metal spire structure (cathode electrode) 2 via the resistive layer 5, and electrons are emitted from its tip. As in this reference example, by using multiple field emission elements 1 together as an electron source, the output of the irradiated electron beam can be increased.

[0028] Since this spint-type spire-structured field emission element is manufactured using semiconductor processing technology, its position and shape can be precisely controlled by lithography technology, and it can also be integrated with electronic circuits such as control circuits and test circuits. Figures 4A to 4C illustrate one embodiment of the manufacturing method of a spint-type FEA, which is a reference example of the present invention. Note that the materials and thicknesses of each layer shown below are examples and are not limited to these.

[0029] (a) On the silicon substrate 7, a Cr / Au / Cr layer 9 (thickness 10 / 50 / 10 nm) which will be the emission electrode 4, a SiCN layer 10 (thickness 300 nm) which will be the resistive layer 5, an SiO2 layer 11 (thickness 200 nm) which will be the insulating layer, and a Cr layer 12 (thickness 92 nm) which will be the extraction electrode (gate electrode) 3 are formed in this order via an SiO2 layer 8. (b) The Cr layer 12 and the SiO2 layer 11 beneath it are patterned by etching with the resist 13 as a mask, so that circular through holes 14 (180 nm in diameter) are formed in the Cr layer 12 and the SiCN layer 10 is exposed. (c) The SiCN layer 10 is patterned by etching using the resist 15 as a mask, exposing a portion of the Cr / Au / Cr layer 9 which will become the emission electrode 4. (d) Using the Cr layer 12, which has been patterned to form through holes 14, as a mask, etching is performed on the SiO2 layer 11 so that side etching occurs, so that the Cr layer 12 protrudes from the edge of the SiO2 layer 11 at its top, and a hole 16 is formed at its bottom in which the SiCN layer 10 is exposed. (e) A Mo layer 17 is deposited perpendicular to the surface of the obtained structure. The Mo layer 17 is also deposited on the SiCN layer 10 at the bottom of the hole 16, but as the Mo layer 17 is deposited, the through holes 14 formed in the Cr layer 12 are gradually filled with the Mo layer 17, so the horizontal cross-sectional area of ​​the Mo layer 17 deposited inside the hole 16 gradually decreases, and finally a cone-shaped metal spire structure 2 is obtained. (f) After forming a protective SiO2 layer 18 on the deposited Mo layer 17, the surrounding SiO2 layer 18 and Mo layer 17 are etched away to expose the Cr layer 12. Note that the SiO2 layer 18 is there to prevent the Mo layer 17 from oxidizing during ashing to remove the resist, so it does not necessarily need to be provided if the resist is removed under conditions that prevent oxidation of the Mo layer 17. (g) On the exposed Cr layer 12 which will become the draw-out electrode (gate electrode) 3 and the Cr / Au / Cr layer 9 which will become the discharge electrode 4, an Au layer 20 (thickness 200 nm) which will become the contact layer 6 is deposited via a Cr layer 19 (thickness 10 nm) which will become the adhesion layer. Note that, as shown in the drawing, if the Au layer 20 which will become the contact layer 6 on the discharge electrode 4 side is to be provided so as to extend from the Cr layer 12 to the Cr / Au / Cr layer 9, then in step (f), that portion of the Cr layer 12 is separated from the Cr layer 12 which will become the draw-out electrode (gate electrode) 3. (h) Finally, by removing the SiO2 layer 18 and the Mo layer 17 beneath it, a field emission element 1 is obtained in which a drawout electrode (gate electrode) 3 is formed on top of the metal spire structure (cathode electrode) 2 on the emission electrode 4, and the drawout electrode (gate electrode) 3 is made of a Cr layer 12 with a hole (through hole 14) that is positioned with the center line of the metal spire structure (cathode electrode) 2 aligned with the center line of the metal spire structure (cathode electrode) 2.

[0030] [First Embodiment] A first embodiment of the present invention will be described using Figures 5 to 8C.

[0031] Figure 5 shows a structure of an integrated circuit inspection device that measures the potential distribution within an integrated circuit by irradiating the electrode pads of an integrated circuit under inspection with an electron beam and detecting secondary electrons generated from the irradiated area. The device comprises a field emission element 1, which serves as the source of the electron beam, and a detection element 23, which consists of a spectrometer for detecting secondary electrons, arranged adjacent to each other on a substrate 21 via a wiring layer 22 to form an integrated field emission / detection element 24. When the electron beam 27 is irradiated from the field emission element 1 onto the electrode pads 26 of the integrated circuit 25 under inspection, secondary electrons 28 are generated from the irradiated area. The detection element 23 is positioned to detect these secondary electrons 28. In the integrated field emission / detection element 24 shown in Figure 5, one detection element 23 is provided corresponding to one field emission element 1.

[0032] While many types of spectrometers are known for detecting secondary electrons, in a preferred embodiment of the present invention, a retarding field energy analyzer, which has a simple structure and is process-compatible with a spint-type field emission element, was used as the secondary electron detection element.

[0033] The integrated field emission / detection element 24 may have a structure as shown in Figure 5, or, as shown in Figures 6 and 7, a plurality of detection elements 23 may be provided corresponding to a plurality of field emission elements 1. Figure 6 is a top view, and Figure 7 is a cross-sectional view of the structure in Figure 6. The difference from the FEA shown in Figures 1 and 2, in which a large number of field emission elements 1 are arranged side by side, is that in Figure 6 (top view), a plurality of detection elements 23 are arranged so as to surround a plurality of field emission elements 1 located in the center, and in Figure 7 (cross-sectional view), the detection elements 23 are provided in the region adjacent to the region in which the field emission elements 1 are formed, but the configuration with respect to the field emission elements 1 is basically the same.

[0034] In a preferred embodiment of the present invention, the integrated field emission detection element 24 may have a structure in which a detection element 23 consisting of a stopping electric field analyzer is provided on a silicon substrate 7 via an SiO2 layer 8, in the following order: a SiCN layer 10, a Cr / Au / Cr layer 31, an SiO2 layer 11, and a Cr layer 12. In this embodiment, in the formation region of the detection element 23, the Cr / Au / Cr layer 9 that becomes the emission electrode 4 in the field emission element 1 is absent, and instead a Cr / Au / Cr layer 31 that becomes the secondary electron detection electrode 29 is provided. Furthermore, the Cr layer 12 in the formation region of the detection element 23 is provided on the same layer as the Cr layer 12 that becomes the extraction electrode (gate electrode) 3 in the field emission element 1, but is electrically isolated from the Cr layer 12 that becomes the extraction electrode (gate electrode) 3, and functions as a spectroscopic grid electrode 30 that performs spectroscopy by applying a stopping potential to control the electrons flowing into the secondary electron detection electrode 29. Although the resistive layer 5, which consists of the SiCN layer 10, is not functionally necessary for the detection element 23, it is left in place, separated from the SiCN layer 10 on the field emission element 1 side, in order to facilitate the integration process with the field emission element 1.

[0035] Using Figures 8A to 8C, we will explain one method of manufacturing the integrated field emission / detection element 24. However, since there are many parts in common with the manufacturing process of the field emission element 1 shown in Figures 4A to 4C, we will focus on explaining the differences.

[0036] First, in step (a), the layered structure of each layer on the silicon substrate 7 is as follows: in the field emission element 1 formation region, it consists of an SiO2 layer 8, a Cr / Au / Cr layer 9, a SiCN layer 10, an SiO2 layer 11, and a Cr layer 12; and in the detection element 23 formation region, it consists of an SiO2 layer 8, a SiCN layer 10, a Cr / Au / Cr layer 31, an SiO2 layer 11, and a Cr layer 12. In addition, the SiCN layer 10 is divided between the field emission element 1 formation region and the detection element 23 formation region. Then, in step (f), the metal spire structure 2 formed in the region where the detection element 23 is formed is selectively removed to expose the Cr / Au / Cr layer 31, which will become the secondary electron detection electrode 29, at the bottom of the hole 16, and the Cr layer 12 is electrically separated between the region where the field emission element 1 is formed and the region where the detection element 23 is formed. Then, in step (g), an Au layer 20, which will become the contact layer 6, is deposited on each of the Cr layers 12 via a Cr layer 19 acting as an adhesion layer. In this way, the field emission element 1 and the detection element 23 can be integrated and provided on the same substrate while sharing most of the processes.

[0037] As shown in Figure 5, the inspection device of the present invention may be configured with an integrated field emission / detection element 24, consisting of one field emission element 1 and one detection element 23, as the basic unit, and multiple such units may be repeatedly arranged in a horizontal row or in a vertical and horizontal array. Although not shown in the figure, as shown in Figure 6, the integrated field emission / detection element 24, consisting of multiple field emission elements 1 and multiple detection elements 23, may also be configured with multiple such units, repeatedly arranged in a horizontal row or in a vertical and horizontal array. Furthermore, it is desirable that each of the multiple integrated field emission / detection elements 24 be independently controllable. With this configuration, each integrated field emission / detection element 24 can be associated with each of the multiple electrode pads 26 of the integrated circuit 25 to be inspected, and inspections can be performed simultaneously and in parallel.

[0038] In this case, since both the field emission element 1 and the detection element 23 in the preferred embodiment of the present invention can be manufactured using semiconductor microfabrication technology, it is possible to arrange them in close proximity with high precision at a submicron pitch, and they can be made to correspond to individual electrode pads 26 arranged at a fine pitch. Furthermore, multiple adjacent integrated field emission / detection elements 24, each independently controllable, can be operated collectively according to the inspection area, thereby flexibly accommodating differences in the size and pitch of multiple electrode pads of the integrated circuit being inspected.

[0039] [Second Embodiment] A second embodiment of the present invention will now be described.

[0040] When the field emission element in an integrated field emission / detection element is composed of a spint-type field emission element and the detection element is composed of a stop-field type analyzer, these are formed on a semiconductor substrate using semiconductor processing technology, so electronic circuits such as control circuits and test circuits can be integrated on the same substrate as the integrated field emission / detection element. The control circuits to be integrated are not particularly limited as long as they can be formed on the semiconductor substrate, but examples include a current control circuit that controls the emission current from the field emission element as shown in Figure 9, a cathode potential control circuit that modulates the acceleration voltage of the field emission element as described later, and a detection element control circuit that controls the potential of the spectroscopic grid electrode according to the detection current of the stop-field type analyzer, which is the detection element. Furthermore, the test circuit performs some or all of the functions of the automated test equipment (ATE), and by integrating it on the same substrate as the integrated field emission / detection element, the amount and / or length of external wiring (wiring connecting the conventional ATE and probe) can be reduced, thus enabling wider bandwidth and easier handling.

[0041] [Third Embodiment] A third embodiment of the present invention will be described using Figures 10 to 12.

[0042] Conventional integrated circuit testing methods using electron beams as probes could not drive the integrated circuit with signals during testing. However, the present invention achieves this in the following manner.

[0043] By applying a voltage to the emission electrode of a field emission element, the irradiated primary electrons can be accelerated, and this voltage is called the acceleration voltage. Figure 10 is a graph showing the acceleration voltage on the horizontal axis and the secondary electron emission efficiency (the ratio of the amount of secondary electrons emitted to the amount of primary electrons injected) on the vertical axis. As shown in Figure 10, at an acceleration voltage of around 100V, the secondary electron emission efficiency is almost 1, so there is no net charge transfer, but at lower voltages, the secondary electron emission efficiency is less than 1. Therefore, as shown in Figure 11, the number of secondary electrons 35 emitted from the electrode pad 26 of the integrated circuit 25 under inspection becomes less than the number of primary electrons 34 injected and accumulated in the electrode pad 26, causing the electrode pad 26 to become negatively charged and its potential to decrease, so a current flows from the electrode pad 26 towards the probe 33.

[0044] On the other hand, in the region with voltages higher than the accelerating voltage of around 100V, the secondary electron emission efficiency is greater than 1. Therefore, as shown in Figure 12, the amount of secondary electrons 35 emitted from the electrode pad 26 exceeds the amount of primary electrons 34 accumulated on the electrode pad 26 of the integrated circuit 25 being inspected. As a result, the electrode pad 26 becomes positively charged, its potential increases, and current flows from the probe 33 towards the electrode pad 26.

[0045] In this way, by changing the secondary electron emission efficiency by varying the acceleration voltage, it becomes possible to input a test signal to the electrode pad, i.e., to drive the signal. Furthermore, since the direction of signal input can be changed by varying the acceleration voltage, the same probe can be used regardless of the input / output direction of the pad being tested. Moreover, since secondary electrons are emitted and can be detected regardless of the acceleration voltage (magnitude of secondary electron emission efficiency), signal driving and potential measurement can be performed simultaneously.

[0046] The embodiments described above are provided to facilitate understanding of the present invention and are not intended to limit its interpretation. The elements, arrangement, materials, conditions, shapes, and sizes of the embodiments are not limited to those exemplified and can be modified as appropriate. Furthermore, it is possible to partially substitute or combine the configurations shown in different embodiments. [Explanation of Symbols]

[0047] 1…Field emission element, 2…Metal spire structure (cathode electrode), 3…Ejector electrode (gate electrode), 4…Emission electrode, 5…Resistive layer, 6…Contact layer, 7…Silicon substrate, 8…SiO2 layer, 9…Cr / Au / Cr layer, 10…SiCN layer, 11…SiO2 layer, 12…Cr layer, 13…Resist, 14…Through hole, 15…Resist, 16…Hole, 17…Mo layer, 18…SiO2 layer, 19…Cr layer, 20…Au layer, 21…Substrate, 22…Wiring layer, 23…Detection element, 24…Integrated field emission / detection element, 25…Integrated circuit, 26…Electrode pad, 27…Electron beam, 28…Secondary electrons, 29…Secondary electron detection electrode, 30…Spectroscopic grid electrode, 31…Cr / Au / Cr layer, 32…Accelerating voltage, 33…Probe, 34…Primary electrons, 35…Secondary electrons

Claims

1. An integrated circuit inspection device that irradiates an electrode pad of an integrated circuit to be inspected with an electron beam, detects secondary electrons generated from the irradiated area, and measures the potential distribution within the integrated circuit, An inspection device for an integrated circuit, comprising a field emission element that serves as the source of the electron beam and a detection element that detects the secondary electrons, arranged adjacent to each other on a substrate to constitute an integrated field emission / detection element.

2. The inspection apparatus for an integrated circuit according to claim 1, wherein the field emission element is a field emission element having a perforated extraction electrode positioned on top of a cone-shaped metal spire structure, with the center line of the metal spire structure aligned with the upper part of the field emission element, and the detection element is a stopping field type analyzer.

3. The inspection apparatus for an integrated circuit according to claim 1, wherein the integrated field emission / detection element is configured by arranging one detection element corresponding to one field emission element.

4. The inspection apparatus for an integrated circuit according to claim 1, wherein the integrated field emission / detection element is configured by arranging a plurality of detection elements corresponding to a plurality of field emission elements.

5. An inspection apparatus for an integrated circuit according to claim 3 or 4, wherein multiple integrated field emission / detection elements are repeatedly arranged in a horizontal row or in a vertical and horizontal array.

6. The inspection apparatus for an integrated circuit according to claim 5, wherein each of the multiple integrated field emission / detection elements can be controlled independently.

7. The inspection apparatus for an integrated circuit according to claim 2, wherein an electronic circuit is further formed on the substrate.

8. A method for manufacturing an integrated circuit inspection apparatus, which irradiates an electrode pad of an integrated circuit to be inspected with an electron beam, detects secondary electrons generated from the irradiated area, and measures the potential distribution within the integrated circuit, A step of preparing a substructure on a substrate in which a region for forming a field emission element that serves as the source of the electron beam and a region for forming a detection element that detects the secondary electrons are arranged adjacent to each other. A step of laminating an insulating layer and a conductive layer in this order on the aforementioned substructure, A step of forming a plurality of openings in the conductive layer and the insulating layer in the field emission element formation region and the detection element formation region, which penetrate both and expose the lower structure. A step of forming a metal spire structure on the lower structure within each of the multiple openings, A step of selectively removing the metal spire structure in the region where the detection element is formed, A method for manufacturing an integrated circuit testing apparatus equipped with [a specific component].

9. A method for inspecting an integrated circuit, comprising irradiating an electrode pad of the integrated circuit to be inspected with an electron beam, detecting secondary electrons generated from the irradiated area, and measuring the potential distribution within the integrated circuit, A method for inspecting an integrated circuit, wherein a field emission element is used as the source of the electron beam, and the acceleration voltage applied to the emission electrode of the field emission element is changed to drive a signal during inspection.

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