Substrate processing equipment

Abstract

To provide a substrate processing apparatus that can effectively exhaust residual gases and other substances remaining in the processing space above the upper shower head and in the door opening of the chamber by simultaneously performing internal purging and external purging of the upper shower head. [Solution] A substrate processing apparatus comprising: a chamber that provides a processing space in which a processing process for a substrate is carried out; an upper shower head plate provided in the upper interior of the chamber for supplying purge gas; a stem connected to the upper surface of the upper shower head plate, into which the purge gas is supplied and which has a first supply hole formed therein; and a back plate that forms a purge gas space between itself and the upper surface of the upper shower head plate and which has a second supply hole formed therein.

Description

Technical Field

[0006]

[0001] The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus capable of preventing the generation of particles that may occur due to residual gas or the like by effectively exhausting the residual gas remaining in the chamber.

Background Art

[0002] A substrate processing apparatus according to the prior art deposits a thin film having a predetermined thickness on one surface of a substrate, for example, the upper surface of the substrate. In this case, when the thin films overlap and are deposited on the upper surface of the substrate, the substrate may bow due to the stress of the thin film.

[0003] When the substrate bows in this way, it becomes difficult to position the substrate at the correct position when performing processing on the substrate in subsequent various substrate processing steps. In particular, although the accuracy of the processing steps for the substrate is increasing day by day, when such a bowing phenomenon occurs, the accuracy of the processing steps will decrease. Therefore, in order to prevent the above-described bowing phenomenon of the substrate, a thin film having a predetermined thickness is deposited on the lower surface of the substrate to suppress the bowing phenomenon.

[0004] Such a substrate processing apparatus includes an upper shower head that supplies a purge gas or the like above the substrate, and further includes a lower shower head that supplies a process gas below the substrate.

[0005] However, even when a purge gas is supplied through the upper shower head, the process gas supplied from the lower shower head diffuses into the chamber and remains in the processing space above the upper shower head, and various by-products may be generated. In particular, residual gas may remain inside the door opening through which the substrate is carried in and out of the chamber without being exhausted, generating various by-products and possibly generating particles.

[0006] In addition, in a substrate processing apparatus according to the prior art, when replacing or repairing the upper shower head, due to the large weight of the upper shower head, a lot of time and personnel are required. [Overview of the project] [Problems that the invention aims to solve]

[0007] The present invention aims to provide a substrate processing apparatus that can effectively exhaust residual gases and the like remaining in the processing space above the upper shower head and in the door opening of the chamber, etc., by simultaneously performing internal purging and external purging of the upper shower head.

[0008] Furthermore, the present invention aims to provide a substrate processing apparatus that constructs a dual-channel purge gas supply system without being affected by the external environment during processing of the substrate.

[0009] Furthermore, the present invention aims to provide a substrate processing apparatus that can reduce the weight burden on the upper shower head when replacing or repairing the upper shower head, thereby improving the working environment.

[0010] Furthermore, the present invention aims to provide a substrate processing apparatus that can guide residual gas and by-products to the exhaust section by forming a symmetrical flow path for purge gas that extends downward from the periphery of the upper shower head, and by further imparting a downward directionality to the purge gas. [Means for solving the problem]

[0011] The object of the present invention described above can be achieved by a substrate processing apparatus comprising: a chamber that provides a processing space in which a processing step for a substrate is performed; an upper shower head plate provided in the upper interior of the chamber for supplying a purge gas; a stem connected to the upper surface of the upper shower head plate, into which the purge gas is supplied and into which a first supply hole is formed; and a back plate that forms a purge gas space between itself and the upper surface of the upper shower head plate and has a second supply hole formed therein.

[0012] On the other hand, the back plate may be provided spaced apart from the stem on the upper surface of the upper shower head plate.

[0013] Furthermore, the distance between the stem and the back plate on the upper surface of the upper shower head plate may be 0.5 mm to 5 mm.

[0014] Furthermore, the purge gas supplied from the first supply port can flow into the purge gas space through the second supply port.

[0015] On the other hand, the first supply hole and the second supply hole may be formed at the same height on the upper surface of the upper shower head plate.

[0016] Furthermore, the back plate may comprise a main body portion provided spaced apart from the upper surface of the upper shower head plate and having an opening through which the stem passes, and a first extended portion extending downward from the inner edge of the main body portion and connected to the upper surface of the upper shower head plate.

[0017] Furthermore, the back plate may further include a second extending portion that extends downward from the outer edge of the main body and is connected to the upper surface of the upper shower head plate.

[0018] In this case, the second supply hole may be provided in the first extension portion.

[0019] On the other hand, the upper shower head plate and the back plate may be made of aluminum or ceramic material. [Effects of the Invention]

[0020] According to the present invention having the above-described configuration, by simultaneously performing internal purging and external purging of the upper shower head, residual gases and the like remaining in the processing space above the upper shower head and the door opening of the chamber can be effectively exhausted.

[0021] In particular, according to the present invention, a purge gas supply system with a double flow path that is not affected by the external environment during the process on the substrate can be constructed.

[0022] Also, according to the present invention, a symmetric flow path of the purge gas is formed downward from the edge of the upper shower head, and by imparting a downward directionality to the purge gas, residual gases, by-products, etc. can be induced to the exhaust section and discharged.

Brief Description of the Drawings

[0023] [Figure 1] It is a side cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention. [Figure 2] It is a view showing an enlarged upper shower head of FIG. 1. [Figure 3] It is an upper perspective view of the back plate. [Figure 4] It is a side cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.

Modes for Carrying Out the Invention

[0024] Hereinafter, referring to the drawings, the structure of the substrate processing apparatus 1000 according to the embodiment of the present invention will be described in detail.

[0025] FIG. 1 is a side cross-sectional view of a substrate processing apparatus 1000 according to an embodiment of the present invention.

[0026] Referring to FIG. 1, the substrate processing apparatus 1000 includes a chamber 100 that provides a processing space 110 in which a processing step for the substrate S is performed, an upper shower head plate 210 provided inside the upper part of the chamber 100 for supplying a purge gas, a stem 340 connected to the upper surface of the upper shower head plate 210 and having the purge gas supplied therein and a first supply hole 341 formed therein, and a back plate 300 that forms a purge gas space 312 between the upper surface of the upper shower head plate 210 and has a second supply hole 321 formed therein.

[0027] First, the chamber 100 may provide a processing space 110 inside which various components necessary for the deposition process on the substrate S are housed.

[0028] One side of the chamber 100 is provided with a door opening 120 through which the substrate S is loaded into or unloaded from the processing space 110, and the door opening 120 may be provided with a door 130.

[0029] On the other hand, a substrate support portion 400 may be provided at the lower part of the processing space 110 of the chamber 100 to support the substrate S and expose the lower surface of the substrate S to the process gas.

[0030] The substrate support portion 400 supports the peripheral edge of the lower surface of the substrate S in the lower part of the processing space 110. A lower shower head 430 is provided inside the substrate support portion 400, and process gas can be supplied toward the lower surface of the substrate S by the lower shower head 430. The substrate support portion 400 may be connected to a connecting bar 470 that extends downward.

[0031] On the other hand, the substrate support portion 400 may include a substrate holder 410 that supports the peripheral edge of the lower surface of the substrate S, and the aforementioned lower shower head 430 may be provided inside the substrate holder 410.

[0032] The lower shower head 430 may include a lower shower head plate 431 and a lower plate 450 in which a heat exchange channel (not shown) is formed.

[0033] In this case, the substrate holder 410 may be supported by a fixing portion 420 whose lower end is connected to the lower plate 450.

[0034] The substrate holder 410 is formed extending upward from the fixing portion 420, and the upper end of the substrate holder 410 may have a shape in which it is bent inward.

[0035] In this case, a recess 416 may be formed at the upper end of the substrate holder 410. Therefore, when the substrate S is placed on the substrate holder 410, the substrate S is inserted into the recess 416, and the lower peripheral surface of the substrate S is supported.

[0036] Alternatively, process gas may be supplied to the lower showerhead 430 via the lower supply passage 474 that penetrates the connecting bar 470.

[0037] A buffer space 432 is provided in the lower shower head 430, and the buffer space 432 may be provided between the lower shower head plate 431 and the lower plate 450. Although not shown, a baffle or blocking plate for dispersing gas may be inserted between the lower shower head plate 431 and the lower plate 450, or in the buffer space 432.

[0038] On the other hand, a heat exchange channel (not shown) is formed in the lower plate 450, and a heat exchange fluid or the like flows along the heat exchange channel, allowing the temperature of the process gas or the inside of the chamber 100 to be adjusted by heat exchange.

[0039] Furthermore, the lower plate 450 can serve to support the lower shower head plate 431 and the substrate holder 410. In this case, the lower shower head plate 431 may be connected to the upper surface of the lower plate 450. Also, the fixing portion 420 that supports the lower end of the substrate holder 410 may be connected to the lower plate 450.

[0040] In this case, multiple fixing portions 420 may be provided and arranged at predetermined intervals along the outer circumference of the lower plate 450. That is, when multiple fixing portions 420 are provided, the space between adjacent fixing portions 420 may be open downwards and communicate with the inside of the chamber 100. Therefore, a space is formed between the side surface of the lower shower head plate 431, the side surface of the lower plate 450, and the inner surface of the substrate holder 410, and this space can form an exhaust passage 422.

[0041] In this case, a portion of the process gas supplied from the lower showerhead 430 can be discharged to the lower part of the chamber 100 through the exhaust passage 422 and exhausted to the outside of the chamber 100 via the exhaust section 490 provided at the bottom of the chamber 100.

[0042] On the other hand, an upper shower head 200 may be provided at the top of the chamber 100 to supply a purge gas such as an inert gas toward the upper surface of the substrate S. The upper shower head 200 may be made of, for example, AlN (Aluminum Nitride).

[0043] The upper shower head 200 may include an upper shower head plate 210 provided in the upper part of the inside of the chamber 100 and positioned toward the substrate support portion 400 or the substrate S, and supplying purge gas, and a shower head connection portion 220 extending upward from the central part of the upper shower head plate 210.

[0044] The upper shower head plate 210 may have a diameter or area that is substantially larger than the substrate S. Alternatively, the upper shower head plate 210 may have a diameter or area that substantially corresponds to the substrate support portion 400.

[0045] Multiple through holes 212 may be formed in the upper shower head plate 210. Purge gas can be supplied to the lower substrate S through these through holes 212.

[0046] Furthermore, the upper shower head plate 210 may be made of a metal such as aluminum or a ceramic material (e.g., AlN).

[0047] However, in order to solve problems such as the stress compensation thin film deposited on the lower surface of the substrate S to compensate for the bowing of the substrate S having low heat resistance and peeling off in subsequent high-temperature processes, it is necessary to deposit the stress compensation thin film in a high-temperature environment of 500°C or higher to ensure heat resistance. In this case, it is desirable that the upper shower head plate 210 be made of a ceramic material so as to have less thermal deformation and high heat resistance.

[0048] In this case, if the upper shower head plate 210 is made of ceramic material, a plasma electrode and a heater electrode may be embedded inside.

[0049] On the other hand, the shower head connection portion 220 may extend upward from approximately the center of the upper shower head plate 210. The upper end of the shower head connection portion 220 may protrude upward from the chamber 100 through the upper opening 112 of the chamber 100.

[0050] The upper end of the upper shower head connection portion 220 may be connected to the upper shower head fixing portion 500 outside the chamber 100.

[0051] The upper shower head fixing portion 500 may be located on the upper outside of the chamber 100 and connected to the shower head connection portion 220. In this case, the upper shower head fixing portion 500 may be arranged to be vertically movable.

[0052] For example, the substrate processing apparatus 1000 is equipped with a plurality of support bars (not shown) adjacent to the chamber 100, and the upper shower head fixing part 500 can move up and down along the support bars. The structure for moving the upper shower head fixing part 500 up and down is described as an example and can be implemented in various forms.

[0053] When the upper shower head fixing part 500 moves up and down, the shower head connecting part 220 and the upper shower head plate 210 can also move up and down together. In other words, the upper shower head 200 may be arranged to be able to move up and down.

[0054] On the other hand, in order to maintain the internal pressure of the chamber 100 when the upper shower head fixing part 500 moves up and down, the substrate processing apparatus 1000 may further include a bellows 700 that extends and retracts to connect the upper shower head fixing part 500 and the chamber 100 to each other.

[0055] The bellows 700 is positioned between the upper connecting portion 710 and the lower connecting portion 720, the upper connecting portion 710 is positioned on the upper shower head fixing portion 500, and the lower connecting portion 720 may be provided on the upper surface of the chamber 100.

[0056] A connecting groove 510 may be formed inside the upper shower head fixing portion 500, and the upper end of the shower head connecting portion 220 may be inserted into the connecting groove 510 for connection.

[0057] On the other hand, the substrate processing apparatus 1000 may also include a stem 340 connected to the upper surface of the upper shower head plate 210, into which the purge gas is supplied and into which the first supply hole 341 is formed, and a back plate 300 which forms a purge gas space 312 between itself and the upper surface of the upper shower head plate 210 and into which the second supply hole 321 is formed.

[0058] For example, the stem 340 may be provided in a cylindrical shape with open top and bottom. In this case, the upper end of the stem 340 may be connected to the upper shower head fixing part 500, and the lower end of the stem 340 may be connected to the upper surface of the upper shower head plate 210.

[0059] Therefore, the stem 340 may be positioned at a predetermined distance from the shower head connection portion 220 in the upper shower head fixing portion 500 and may extend downward. That is, a stem space 322 through which purge gas flows can be provided between the stem 340 and the shower head connection portion 220.

[0060] Furthermore, the stem 340 may have the first supply hole 341 formed therein. The first supply hole 341 serves to supply the purge gas from the stem space 322 to the outside. For example, the purge gas supplied from the first supply hole 341 may be supplied to the purge gas space 312 of the back plate 300.

[0061] The first supply hole 341 may be formed adjacent to the lower end of the stem 340. Alternatively, the first supply hole 341 may be provided in a slit shape (not shown).

[0062] On the other hand, the back plate 300 may be provided on the upper surface of the upper shower head plate 210. The back plate 300 forms a purge gas space 312 between itself and the upper surface of the upper shower head plate 210, allowing the purge gas supplied from the first supply hole 341 to flow into the purge gas space 312.

[0063] In other words, the purge gas that flows into the purge gas space 312 can be supplied to the lower substrate S via the upper shower head plate 210.

[0064] For example, the back plate 300 may be made of aluminum or ceramic material. In particular, if the back plate 300 is made of ceramic material, it can provide heat resistance to cope with high-temperature processes and chemical resistance to chamber cleaning gases.

[0065] Figure 2 is a magnified view of the upper shower head 200, and Figure 3 is an overhead perspective view showing the back plate 300.

[0066] Referring to Figures 1 to 3, the back plate 300 may include a main body portion 310 provided spaced apart from the upper surface of the upper shower head plate 210 and having an opening 350 through which the stem 340 passes, and a first extending portion 320 extending downward from the inner edge of the main body portion 310 and connected to the upper surface of the upper shower head plate 210.

[0067] Furthermore, the back plate 300 may include a second extending portion 330 that extends downward from the outer edge of the main body portion 310 and is connected to the upper surface of the upper shower head plate 210.

[0068] The main body portion 310 may have a roughly donut shape, and the opening 350 may be formed in the center. The stem 340 and the shower head connection portion 220 may be arranged to pass through the opening 350.

[0069] Furthermore, the first extension portion 320 formed on the inner edge of the main body portion 310 and the second extension portion 330 formed on the outer edge of the main body portion 310 may be connected to the upper shower head plate 210.

[0070] Therefore, the space enclosed by the main body portion 310, the first extension portion 320, the second extension portion 330, and the upper surface of the upper shower head plate 210 may form the purge gas space 312.

[0071] In this case, the second supply hole 321 may be provided in the first extension portion 320. Although not shown, the second supply hole 321 may also be provided in the form of a slit.

[0072] The first supply hole 341 and the second supply hole 321 may be formed at the same height on the upper surface of the upper shower head plate 210. Furthermore, the first supply hole 341 and the second supply hole 321 may be arranged concentrically with respect to each other.

[0073] Therefore, the purge gas supplied to the outside of the stem 340 from the first supply hole 341 can flow into the purge gas space 312 through the second supply hole 321.

[0074] In this case, the space between the first supply hole 341 and the second supply hole 321 may be exposed to the processing space 110. That is, the space between the first supply hole 341 and the second supply hole 321 may be configured to be exposed to the processing space 110, rather than having a flow path formed by a separate member. However, since the first supply hole 341 and the second supply hole 321 are arranged close enough to each other by a predetermined distance, a flow path can be naturally formed.

[0075] Therefore, the stem space 322 and the purge gas space 312 are in communication with each other, forming a fluid space 332 through which the purge gas flows. The purge gas that has moved downward through the fluid space 332 can be supplied downward toward the substrate S through the through hole 212 of the upper shower head plate 210.

[0076] On the other hand, the back plate 300 may be positioned on the upper surface of the upper shower head plate 210 at a predetermined distance from the stem 340. However, if the distance between the back plate 300 and the stem 340 is excessively large, the purge gas ejected from the first supply hole 341 may have difficulty flowing into the second supply hole 321. Therefore, the distance between the back plate 300 and the stem 340 may be adjusted so that the purge gas can easily flow into the second supply hole 321.

[0077] For example, the distance between the stem 340 and the back plate 300, or the distance between the stem 340 and the first extension portion 320, may be 0.5 mm to 5 mm.

[0078] If the distance between the stem 340 and the first extension 320 is less than 0.5 mm, the difference in the horizontal thermal expansion coefficients between the stem 340 and the first extension 320 may cause them to come into contact with each other and break. Furthermore, if the distance between the stem 340 and the first extension 320 is less than 0.5 mm, and the first supply hole 341 and the second supply hole 321 are not precisely aligned in a one-to-one ratio, this may actually hinder the flow and dispersion of the purge gas.

[0079] In contrast, if the gap exceeds 5 mm, a large amount of purge gas may leak to the outside of the backplate 300 through the gap between the stem 340 and the first extension portion 320, potentially causing a decrease in the purge gas pressure supplied to the substrate S.

[0080] On the other hand, the present invention makes it possible to construct a dual-flow purge gas supply system that can simultaneously perform internal purging and external purging of the upper shower head 200, and furthermore, can do so without being affected by the external environment during the process. This will be described in detail below.

[0081] Referring to Figure 1, in the present invention, purge gas can be supplied in a double manner along the outside of the back plate 300 and along the space between the back plate 300 and the upper shower head 200.

[0082] The purge gas supplied to the outside of the back plate 300 can purge various residual gases and by-products remaining in the processing space 110 above the back plate 300.

[0083] Furthermore, the purge gas supplied along the space between the back plate 300 and the upper shower head 200 can be supplied to the substrate S via the upper shower head plate 210.

[0084] Here, in order to distinguish between the purge gas supplied along the space between the back plate 300 and the upper shower head 200 and the purge gas supplied to the outside of the back plate 300, they are referred to as the first purge gas and the second purge gas, respectively. The first purge gas and the second purge gas may be composed of the same type, but are not limited to this, and may be composed of different types of gases.

[0085] Therefore, the external purging on the outside of the back plate 300 and the internal purging of the upper shower head 200 can prevent the process gas supplied to the lower surface of the substrate S from flowing into the upper surface of the substrate S.

[0086] For example, the first purge gas supply channel 530 may be connected to the upper shower head fixing part 500, and purge gas may be supplied to the stem space 322 between the stem 340 and the shower head connection part 220.

[0087] The first purge gas supplied to the stem space 322 moves downward and can flow into the purge gas space 312 between the back plate 300 and the upper shower head plate 210 through the first supply hole 341 and the second supply hole 321 of the stem 340. In the purge gas space 312, the first purge gas can be supplied downward toward the substrate S through the through hole 212 of the upper shower head plate 210.

[0088] On the other hand, the substrate processing apparatus 1000 may further include a second purge gas supply channel 730 for supplying purge gas to the outside of the back plate 300.

[0089] The second purge gas supply channel 730 can supply the second purge gas to the outside of the back plate 300 via the bellows 700. For example, the second purge gas supply channel 730 can supply the second purge gas to the outside of the back plate 300 by passing through the upper connection portion 710 or the lower connection portion 720.

[0090] The second purge gas can be supplied into the chamber 100 through the upper opening 112 of the chamber 100, and can also be supplied along the outside of the back plate 300 to the processing space 110 above the back plate 300. Therefore, the second purge gas can purge and exhaust various residual gases or by-products remaining in the processing space 110 above the back plate 300 to the bottom of the chamber 100.

[0091] On the other hand, Figure 4 is a side cross-sectional view showing a substrate processing apparatus 2000 according to another embodiment. In Figure 4, the same reference numerals are used for components identical to those in the previously described embodiments.

[0092] Referring to Figure 4, in this embodiment, the backplate 1300 may comprise a main body portion 1310 and a first extension portion 1320 extending downward from the inner edge of the main body portion 1310. The first extension portion 1320 may be connected to the upper surface of the upper shower head plate 210.

[0093] In other words, in this embodiment, the purge gas space 312 between the back plate 1300 and the upper shower head plate 210 may not be sealed, but may have an open configuration at the outer edge of the back plate 1300.

[0094] Therefore, a portion of the first purge gas that flows from the stem space 322 inside the stem 340 into the purge gas space 312 via the first supply hole 341 and the second supply hole 1321 can be supplied to the substrate S below via the through hole 212 of the upper shower head plate 210.

[0095] Furthermore, a portion of the first purge gas that flows into the purge gas space 312 may flow out to the outside through the opening at the edge of the back plate 1300, and together with the second purge gas outside the back plate 1300, it may form a downward airflow.

[0096] Such a downward airflow can prevent the process gas supplied to the lower surface of the substrate S from flowing into the upper surface of the substrate S.

[0097] Although preferred embodiments of the present invention have been described above, those skilled in the art can modify or change the present invention in various ways without departing from the spirit and scope of the invention as described in the claims. Therefore, if a modified implementation basically includes the elements of the claims of the present invention, it should be understood that it falls within the technical scope of the present invention. [Explanation of Symbols]

[0098] 100 chambers 110 Processing space 120 Door opening 130 doors 200 Upper shower head 210 Upper shower head plate 220 Shower head connection part 300 Backplate 310 Main body 320 1st extension part 321 2nd supply hole 330 Second extension part 340 Stem 341 1st supply hole 400 Substrate support section 410 PCB holder 430 Lower shower head 431 Lower shower head plate 450 Lower plate 500 Upper shower head fixing part 530 First purge gas supply channel 700 bellows 730 Second purge gas supply channel 1000 Substrate Processing Equipment

Claims

1. A chamber that provides a processing space in which processing steps are carried out on the substrate, An upper shower head plate provided inside the upper part of the chamber for supplying purge gas, A stem connected to the upper surface of the upper shower head plate, through which the purge gas is supplied, and which has a first supply hole formed therein, A purge gas space is formed between the upper surface of the upper shower head plate and the back plate, and a second supply hole is formed therein. A substrate processing apparatus characterized by comprising:

2. On the upper surface of the upper shower head plate, The substrate processing apparatus according to claim 1, characterized in that the back plate is provided spaced apart from the stem.

3. On the upper surface of the upper shower head plate, The substrate processing apparatus according to claim 2, characterized in that the distance between the stem and the back plate is 0.5 mm to 5 mm.

4. The substrate processing apparatus according to claim 1, characterized in that the purge gas supplied from the first supply hole flows into the purge gas space through the second supply hole.

5. The first supply hole and the second supply hole are, The substrate processing apparatus according to claim 1, characterized in that it is formed at the same height as the upper surface of the upper shower head plate.

6. The aforementioned backplate is The main body portion is provided spaced apart from the upper surface of the upper shower head plate and has an opening through which the stem passes; A first extending portion extends downward from the inner edge of the main body and is connected to the upper surface of the upper shower head plate, A substrate processing apparatus according to claim 1, characterized by comprising:

7. The aforementioned backplate is The substrate processing apparatus according to claim 6, further comprising a second extending portion that extends downward from the outer edge of the main body portion and is connected to the upper surface of the upper shower head plate.

8. The substrate processing apparatus according to claim 6 or claim 7, characterized in that the second supply hole is provided in the first extension portion.

9. The substrate processing apparatus according to claim 1, characterized in that the upper shower head plate and the back plate are made of aluminum or ceramic material.

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