Resin composition for molding components and semiconductor package using the same

Abstract

The present invention provides a resin composition for molding components with improved heat dissipation characteristics and a semiconductor package using the same. [Solution] The resin composition of the present invention comprises 2 to 10% by weight of epoxy resin, 2 to 10% by weight of curing agent, 50 to 90% by weight of filler, 5 to 20% by weight of phase change material composite particles, and 0 to 5% by weight of additives, wherein the phase change material composite particles include core particles containing the phase change material and a shell layer made of organic or inorganic material surrounding the surface of the core particles.

Description

Technical Field

[0001] The present invention relates to a resin composition, and more particularly, to a resin composition for a molding member and a semiconductor package using the same.

Background Art

[0002] In response to the remarkable development of the electronics industry and user requirements, electronic devices have been miniaturized and lightened, and thus, higher integration of semiconductor elements, which are the core components of electronic devices, is required. In a semiconductor package, a molding member serves to protect a semiconductor chip from the external environment and physical / chemical elements. In a semiconductor package including a highly integrated semiconductor chip, it is required that the molding member effectively releases heat generated during driving of the semiconductor chip.

Summary of the Invention

Problems to be Solved by the Invention

[0003] The present invention has been made in view of the above prior art, and an object of the present invention is to provide a resin composition for a molding member having improved heat dissipation characteristics and a semiconductor package using the same.

Means for Solving the Problems

[0004] A resin composition for a molding member according to an aspect of the present invention made to achieve the above object is a resin composition for forming a molding member included in a semiconductor package, and includes 2 to 10% by weight of an epoxy resin, 2 to 10% by weight of a curing agent, 50 to 90% by weight of a filler, 5 to 20% by weight of phase change material composite particles, and 0 to 5% by weight of an additive. The phase change material composite particles include core particles containing a phase change material and a shell layer made of an organic or inorganic substance surrounding the surface of the core particles.

[0005] A semiconductor package according to one aspect of the present invention made to achieve the above objective comprises a semiconductor chip and a molding member disposed on at least one of the top, side, and bottom surfaces of the semiconductor chip, wherein the molding member comprises a polymer matrix, a filler dispersed within the polymer matrix and comprising at least one of silica, alumina, magnesium oxide, aluminum nitride, and boron nitride, and a plurality of phase change material composite particles dispersed within the polymer matrix, each of the plurality of phase change material composite particles comprising a core particle containing the phase change material and a shell layer made of an organic or inorganic material surrounding the surface of the core particle.

[0006] To achieve the above objective, another aspect of the present invention provides a semiconductor package comprising: a package substrate; a semiconductor chip mounted on the package substrate; and a molding member surrounding the top and side surfaces of the semiconductor chip on the package substrate, wherein the molding member comprises: a polymer matrix of an epoxy resin substrate; a filler dispersed within the polymer matrix; and a plurality of phase-change material composite particles dispersed within the polymer matrix, each of the plurality of phase-change material composite particles comprising: a core particle containing the phase-change material; and a shell layer surrounding the surface of the core particle. The core particles comprise at least one of paraffin, glycol, fatty acid, ester, and derivatives thereof, the shell layer comprises at least one of polyethylene, polypropylene, polyamide, polycarbonate, polyurethane, polysiloxane, polyacrylate, polyester, polyimide, and derivatives thereof, or at least one of alumina, magnesium oxide, aluminum nitride, and boron nitride, and the filler comprises at least one of silica, alumina, magnesium oxide, aluminum nitride, and boron nitride. [Effects of the Invention]

[0007] According to the present invention, the phase-change material composite particles absorb the heat generated during the operation of the semiconductor chip, so the semiconductor package containing the cured resin composition as a molding member has excellent heat dissipation characteristics, and the molding member has improved strength, thereby preventing damage to the semiconductor chip due to external stress and deformation, and improving the reliability of the semiconductor package. [Brief explanation of the drawing]

[0008] [Figure 1] This is a cross-sectional view showing a semiconductor package according to one embodiment. [Figure 2] This is an enlarged view of section A in Figure 1. [Figure 3] This diagram schematically shows a heat dissipation path through phase-change material composite particles contained in the molding member of a semiconductor package according to one embodiment. [Figure 4] This graph schematically shows the relationship between thermal energy and temperature of a molding component containing phase-change material composite particles. [Figure 5] This flowchart shows a method for manufacturing a semiconductor package according to one embodiment. [Modes for carrying out the invention]

[0009] Hereinafter, specific examples of embodiments for carrying out the present invention will be described in detail with reference to the drawings.

[0010] This embodiment relates to a resin composition for molding members included in semiconductor packages. The resin composition according to this embodiment is used in a method for manufacturing semiconductor packages, and the cured product of the resin composition is included in the semiconductor package as a molding member.

[0011] The resin composition according to this embodiment comprises an epoxy resin, a hardener, a filler, phase change material composite particles, and an additive.

[0012] Table 1 lists the content of epoxy resin, curing agent, filler, phase change material composite particles, and additives contained in the resin composition according to this embodiment, in units of weight percent.

[0013] [Table 1]

[0014] In this embodiment, the epoxy resin is present in the resin composition at a concentration of 2 to 10% by weight. In this embodiment, the curing agent is present in the resin composition at a concentration of 2 to 10% by weight. In this embodiment, the filler is present in the resin composition at a concentration of 50 to 90% by weight. In this embodiment, the phase-change material composite particles are present in the resin composition at a concentration of 5 to 20% by weight. In this embodiment, the additive is present in the resin composition at a concentration of 0 to 5% by weight.

[0015] In one embodiment, the epoxy resin is the matrix or binder of a molding member formed by curing a resin composition. In one embodiment, the epoxy resin includes at least one of bisphenol A type epoxy, bisphenol F type epoxy, rubber modified epoxy, novolac epoxy, cycloaliphatic epoxy, tetra-functional epoxy, acryl modified epoxy, coaltar modified epoxy, aliphatic chain modified epoxy, cresol novolac epoxy, polyglycol epoxy, cardanol epoxy, brominated epoxy, and phenoxy epoxy.

[0016] In one embodiment, the curing agent reacts with the epoxy resin in the resin composition to cause a curing reaction of the epoxy resin. In one embodiment, the curing agent comprises at least one of the following: an acid anhydride curing agent, a cationic curing agent, an imidazole curing agent, a dicyandiamide curing agent, and an amine adduct type curing agent.

[0017] In one embodiment, the acid anhydride-based curing agent includes at least one of DDSA (dodecenyl succinic anhydride), PADA (polyadipic acid), PSPA (polysebacic acid), Me-THPA (methyl tetrahydrophthalic anhydride), Me-HHPA (methyl hexahydrophthalic anhydride), MHAC (methylhymic anhydride), THPA (tetrahydrophthalic anhydride), PA (phthalic anhydride), TMA (trimethylicanhydride), PMDA (pyromethylic anhydride), BTDA (benzophenon tetracarboxylic anhydride), HET (chlorendicanhydride), and TBPA (tetrabromo phthalic anhydride).

[0018] In one embodiment, the cationic curing agent comprises at least one of [4-(acetyloxy)phenyl]dimethylsulfonium(OC-6-11)-hexafluoroantimonate(1-), PC-2508, CXC-1742, CXC-1751, BPH (N-benzylpyrazinium hexafluoroantimonate), XNA-2201, and XNA-2202.

[0019] In one embodiment, the imidazole curing agent includes one or more of 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo[1,2-a]benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline, 2-phenylimidazoline, etc.

[0020] In this embodiment, the filler is dispersed in the molding member to form a heat dissipation path, reduce the coefficient of thermal expansion of the molding member, and improve the thermal conductivity. The filler includes an inorganic filler with excellent heat dissipation characteristics. In one embodiment, the filler includes at least one of silica, alumina, magnesium oxide, aluminum nitride, and boron nitride.

[0021] In one embodiment, the filler is contained in the resin composition in a particulate or powdery state, and after the resin composition is cured and converted into a molding member, the filler is uniformly dispersed and arranged in the molding member. The filler particles contained in the resin composition are retained in the molding member without volatilizing or being deformed.

[0022] In this embodiment, the filler contained in the resin composition has a particle size of about 0.1 to 100 μm. In some embodiments, the filler may have an average particle size of about 1 to 50 μm.

[0023] In this embodiment, the phase change material composite particles improve the heat dissipation characteristics of the molding member and improve the toughness of the molding member. In this embodiment, the phase change material composite particles include core particles containing a phase change material and a shell layer disposed on the surface of the core particles.

[0024] In one embodiment, the core particles include a substance having a melting point belonging to the operating temperature range of the semiconductor chip, for example, in the range of 20°C to 100°C. In some embodiments, the core particles may include a substance having a melting point belonging to the range of 50°C to 100°C. In this embodiment, the core particles include a substance that absorbs heat and changes the phase of the core particles from solid to liquid when the temperature of the molding member rises due to the heat generated from the semiconductor chip. Further, the core particles include a substance that releases heat and reversibly changes the phase of the core particles from liquid to solid when the temperature of the molding member drops.

[0025] In one embodiment, the core particles comprise at least one organic substance from among paraffin, glycol, fatty acid, ester, and derivatives thereof. In one embodiment, the core particles comprise at least one from among n-heptadecane, n-octadecane, n-nonadecane, n-eicosane, polyethylene glycol, stearic acid, palmitic acid, lauric acid, and derivatives thereof.

[0026] In some embodiments, the palmitic acid derivative included as a core particle may include at least one of methyl palmitate, ethyl palmitate, propyl palmitate, vinyl palmitate, metal salts of palmitic acid, palmitic acid alcohol, and palmitic acid amide. In some embodiments, the lauric acid derivative included as a core particle may include at least one of methyl ester, dodecyl ester, cetyl ester, phenacyl ester, and phenylhydrazide.

[0027] In this embodiment, the core particles have a particle size of 1 to 100 μm. In some embodiments, the core particles may have a particle size of 10 to 50 μm.

[0028] In this embodiment, a shell layer made of an organic or inorganic material is placed on the surface of the core particle. In this embodiment, the shell layer completely covers the surface of the core particle. In this embodiment, the shell layer has a thickness of about 1 to 10 μm.

[0029] In this embodiment, by arranging the shell layer to surround the surface of the core particles, even if a phase change occurs in the core particles due to heat generated during the operation of the semiconductor chip, the phase-changed material of the core particles (e.g., liquid-phase core particle material or gaseous-phase core particle material) is confined within the space limited by the shell layer, and the phase-changed material of the core particles does not come into direct contact with the matrix of the molding member.

[0030] In some embodiments, the shell layer is made of an organic material, for example, it may include at least one of polyethylene, polypropylene, polyamide, polycarbonate, polyurethane, polysiloxane, polyacrylate, polyester, polyimide, and derivatives thereof. In some embodiments, the shell layer is made of an inorganic material, for example, it may include at least one of alumina, magnesium oxide, aluminum nitride, and boron nitride. In some embodiments, the shell layer may have a relatively high thermal conductivity.

[0031] In one embodiment, the shell layer contains a substance that does not have a boiling point or melting point at the operating temperature of the semiconductor chip, for example, in the range of 0 to 100°C. That is, the shell layer contains a substance that does not undergo a phase change or a substance that maintains one state at the operating temperature of the semiconductor chip, for example, in the range of 0 to 100°C. In this embodiment, even if a phase change occurs in the core particles due to the heat generated during the operation of the semiconductor chip, the shell layer maintains its initial form and phase without undergoing a phase change, and the shell layer contains the substance in which the core particles have undergone a phase change.

[0032] In one embodiment, the phase-change material composite particles are formed using at least one of the following methods: emulsion polymerization, phase separation, sol-gel method, chemical vapor deposition, physical vapor deposition, and crystal growth method.

[0033] In some embodiments, phase-change material composite particles can be formed using an emulsion polymerization method. For example, core particles containing the phase-change material and monomers for the shell layer are added to a solvent, and under mechanical stirring, the monomers are polymerized in the solvent to conformally coat the surface of the core particles with an organic shell layer. The solvent is then dried to obtain a powder of phase-change material composite particles.

[0034] In some embodiments, phase-change material composite particles can be formed using a phase separation method. For example, a first solution is prepared by adding a polymer of the shell layer to a first solvent, and a colloidal solution is prepared by dispersing core particles containing the phase-change material in the first solution. The colloidal solution is then dropped and stirred into a second solvent having different physical properties (e.g., the solubility of molecules in the solvent or the polarity of the solvent) from the first solvent, so that the shell layer conformally coats the surface of the core particles. The solvent is then dried to obtain a powder of phase-change material composite particles.

[0035] In some embodiments, additives may include pigments, dyes, leveling agents, defoamers, adhesion promoters, coupling agents, softeners, and the like. In some embodiments, additives may be added for purposes such as adjusting reaction rate, improving stability, or adjusting hue. In this embodiment, the additive is present in the resin composition in an amount of 0 to 5% by weight. That is, the additive is selectively included in the resin composition, and in some embodiments, the additive may not be present in the resin composition.

[0036] In the resin composition according to this embodiment, the filler contains a substance having a relatively high thermal conductivity, and the filler is present in an amount of 50 to 90% by weight relative to the total content of the resin composition. Since the filler particles are interconnected within the molding member to form a heat dissipation path, the heat generated during the operation of the semiconductor chip is dissipated to the outside of the semiconductor package through the heat dissipation path formed by the filler particles.

[0037] If the filler content is lower than 50% by weight, the fillers will not be properly connected to each other within the molding material, resulting in insufficient heat dissipation pathways and poor heat dissipation characteristics of the semiconductor package. If the filler content is higher than 90% by weight, the modulus of the molding material will increase, failing to adequately protect the semiconductor chip from external shocks and reducing the reliability of the semiconductor package.

[0038] In the resin composition according to this embodiment, the phase-change material composite particles include a substance that undergoes a phase change within the semiconductor operating temperature range, for example, a substance that undergoes a phase change from solid to liquid due to the heat generated during the operation of a semiconductor chip. The phase-change material composite particles absorb heat during the phase change process, thereby reducing and / or preventing the temperature rise of the molding member.

[0039] Furthermore, the phase-change material composite particles may include core particles made of organic material, or, in some embodiments, a shell layer made of organic material. The organic material contained in the phase-change material composite particles has a relatively lower modulus (or elastic modulus) compared to inorganic material, and molding members containing such phase-change material composite particles have improved crack resistance.

[0040] In the resin composition according to this embodiment, the phase-change material composite particles are present in an amount of 5 to 20% by weight relative to the total content of the resin composition. If the content of the phase-change material composite particles is less than 5% by weight, the effect of heat absorption of the molding member is negligible, and if the content of the phase-change material composite particles is greater than 20% by weight, the strength of the molding member decreases, and the reliability of the semiconductor package deteriorates.

[0041] According to the resin composition of the embodiment described above, the phase-change material composite particles absorb the heat generated during the operation of the semiconductor chip, so the semiconductor package containing the cured resin composition as a molding member has excellent heat dissipation characteristics. Furthermore, because the molding member has improved strength, it is possible to prevent damage to the semiconductor chip due to external stress and deformation, thereby improving the reliability of the semiconductor package.

[0042] Figure 1 is a cross-sectional view showing a semiconductor package 1 according to one embodiment, and Figure 2 is an enlarged view of portion A in Figure 1.

[0043] The semiconductor package 1 shown in Figures 1 and 2 is a semiconductor package formed using the resin composition according to this embodiment.

[0044] Referring to Figures 1 and 2, the semiconductor package 1 includes a package substrate 10, a semiconductor chip 20, and a molding member 30. In this embodiment, the molding member 30 is arranged on the package substrate 10 so as to surround the top and side surfaces of the semiconductor chip 20. The molding member 30 is a cured product of the resin composition according to this embodiment.

[0045] In this embodiment, the package substrate 10 includes a printed circuit board or an interposer. In this embodiment, the package substrate 10 is a carrier substrate. Alternatively, in some embodiments, a redistribution structure including a laminated structure of redistribution insulating layers and redistribution layers may be provided instead of the package substrate 10.

[0046] In this embodiment, the semiconductor chip 20 is mounted on a package substrate 10. The semiconductor chip 20 includes logic chips such as a central processing unit (CPU), graphics processor (GPU), field-programmable gate array (FPGA), application processor (AP), digital signal processor, cryptographic processor, microprocessor, microcontroller, analog-to-digital converter, and ASIC (application-specific IC), and / or memory chips including volatile memory such as DRAM (dynamic RAM) and SRAM (static RAM), and non-volatile memory such as PRAM (phase change RAM), MRAM (magnetic RAM), RRAM (resistive RAM), and flash memory.

[0047] In this embodiment, a plurality of semiconductor chips 20 are mounted horizontally and / or stacked vertically on a package substrate 10.

[0048] In this embodiment, the molding member 30 includes a matrix 32, a filler 34, and phase-change material composite particles 36. The filler 34 and the phase-change material composite particles 36 are dispersed and arranged within the matrix 32.

[0049] In this embodiment, the matrix 32 is a polymer matrix based on an epoxy resin. In this embodiment, the matrix 32 is formed by curing the resin composition according to the above-described embodiment, and the matrix 32 is composed of a polymer of epoxy resin and curing agent. If the resin composition selectively contains additives, the substances constituting the matrix 32 further contain the additives.

[0050] In this embodiment, the filler 34 includes an inorganic material-based filler contained in the resin composition at a content of 50 to 90% by weight. As described above, the filler 34 includes at least one of silica, alumina, magnesium oxide, aluminum nitride, and boron nitride.

[0051] In this embodiment, the filler 34 has a particle size of about 0.1 to 100 μm. In some embodiments, the filler 34 may have an average particle size of about 1 to 50 μm. In this embodiment, the filler 34 is present in an amount of about 50 to about 90% by weight relative to the total weight of the molding member 30.

[0052] In this embodiment, the phase-change material composite particle 36 includes a core particle CP containing the phase-change material, and a shell layer SL disposed on the surface of the core particle CP. In this embodiment, the core particle CP includes a material that absorbs heat and changes the phase of the core particle from solid to liquid when the temperature of the molding member rises due to heat generated from the semiconductor chip.

[0053] In one embodiment, the core particle CP comprises at least one organic substance from among paraffin, glycol, fatty acid, ester, and derivatives thereof. In one embodiment, the core particle comprises at least one from among n-heptadecane, n-octadecane, n-nonadecane, n-eicosane, polyethylene glycol, stearic acid, palmitic acid, lauric acid, and derivatives thereof.

[0054] In some embodiments, the palmitic acid derivative included as the core particle CP may include at least one of methyl palmitate, ethyl palmitate, propyl palmitate, vinyl palmitate, metal salts of palmitic acid, palmitic acid alcohol, and palmitic acid amide. In some embodiments, the lauric acid derivative included as the core particle CP may include at least one of methyl ester, dodecyl ester, cetyl ester, phenacyl ester, and phenylhydrazide.

[0055] In this embodiment, the core particles CP have a particle size of 1 to 100 μm, and in some embodiments, the core particles CP may have a particle size of 10 to 50 μm.

[0056] In some embodiments, the shell layer SL is made of an organic material, and for example, the shell layer may include at least one of polyethylene, polypropylene, polyamide, polycarbonate, polyurethane, polysiloxane, polyacrylate, polyester, polyimide, and derivatives thereof.

[0057] In some embodiments, the shell layer SL is made of an inorganic material, for example, the shell layer SL may include at least one of alumina, magnesium oxide, aluminum nitride, and boron nitride. In some embodiments, the shell layer SL may have a relatively high thermal conductivity.

[0058] In this embodiment, the shell layer SL completely covers the surface of the core particle CP. In this embodiment, the shell layer SL has a thickness of about 1 to 10 μm.

[0059] In this embodiment, the phase-change material composite particles 36 are present in an amount of approximately 5 to 20% by weight relative to the total weight of the molding member 30.

[0060] According to this embodiment of the semiconductor package 1, the phase-change material composite particles 36 absorb the heat generated during the operation of the semiconductor chip 10, thereby providing the semiconductor package 1 with excellent heat dissipation characteristics. Furthermore, since the molding member 30 has improved strength, damage to the semiconductor chip 10 due to external stress and deformation can be prevented, thereby improving the reliability of the semiconductor package 1.

[0061] Figure 3 is a schematic diagram showing the heat dissipation path through the phase-change material composite particles contained in the molding member of a semiconductor package according to one embodiment. Figure 4 is a schematic graph showing the relationship between the thermal energy and temperature of the molding member containing the phase-change material composite particles.

[0062] As shown in Figure 3, the filler 34 and the phase-change material composite particles 36 are dispersed and interconnected within the polymer matrix 32. The filler 34 contains a material with relatively high thermal conductivity, and a heat conduction pathway (HCP) is formed from the surface of the semiconductor chip 20 that contacts the mold member 30 (e.g., the top or side surface of the semiconductor chip 20) through the particles of the filler 34. In Figure 3, for ease of understanding, the heat conduction pathway (HCT) formed by the particles of the filler 34 is schematically shown with arrows.

[0063] The phase-change material composite particles 36 are dispersed and arranged within the molding member 30 and are positioned to be connected to the filler material 34. The shell layer SL is made of a material with relatively high thermal conductivity and rapidly transfers heat from the filler material 34 which is positioned adjacent to or connected to it. The core particles CP, positioned within the shell layer SL, contain the phase-change material and undergo a phase change by absorbing the heat transferred to the core particles CP. That is, heat is conducted from the periphery of the phase-change material composite particles 36 toward the core particles CP, and the heat is absorbed within the core particles CP.

[0064] Figure 4 schematically shows the temperature curve T_EX1 of a molded member according to an embodiment containing phase-change material composite particles. For comparison, Figure 4 also shows the temperature curve T_CO1 of a molded member according to a comparative example that does not contain phase-change material composite particles, shown as a dotted line.

[0065] As shown in Figure 4, the temperature of the molded member in the comparative example gradually increases as the amount of thermal energy supplied increases.

[0066] On the other hand, in the mold member according to this embodiment, as the amount of thermal energy supplied increases, the temperature gradually increases in the region indicated by the first region R1 in Figure 4, for example, then the temperature stagnates without increasing in the region indicated by the second region R2 in Figure 4, for example, at a temperature close to the first temperature T1, and then the temperature further increases in the region indicated by the third region R3 in Figure 4, for example.

[0067] Here, the first temperature T1 corresponds to the phase transition temperature of the phase-change material. For example, the first temperature T1 corresponds to the melting point of some phase-change materials.

[0068] For example, in the first region R1, the phase-change material remains in a solid state, and the temperature of the phase-change material (or the temperature of the molded member containing the phase-change material) rises due to thermal energy supplied from the outside. In the second region R2, the phase-change material absorbs thermal energy supplied from the outside and undergoes a phase change from a solid state to a liquid state, with no or slight increase in the temperature of the molded member during the phase change. In the third region R3, the phase-change material remains in a liquid state, and the temperature of the phase-change material rises due to thermal energy supplied from the outside.

[0069] As shown in Figure 4, the molded member according to the embodiment containing phase-change material composite particles has a lower temperature than the molded member according to the comparative example that does not contain phase-change material composite particles.

[0070] Figure 5 is a flowchart showing a method for manufacturing a semiconductor package according to one embodiment.

[0071] Referring to Figure 5, the method for manufacturing a semiconductor package includes the steps of mounting a semiconductor chip on a package substrate (S10) and forming a molding member to cover the semiconductor chip on the package substrate (S20).

[0072] In one embodiment, in the step of mounting semiconductor chips on a package substrate (S10), the semiconductor chips consist of one or more chips. For example, multiple semiconductor chips are mounted horizontally on the package substrate, and / or multiple semiconductor chips are mounted stacked vertically. The semiconductor chips are electrically connected to connecting terminals provided on or inside the package substrate, for example, by a flip-chip method or a wire bonding method.

[0073] In this embodiment, the package substrate includes an interposer or a printed circuit board. In some embodiments, a semiconductor chip may be mounted on a carrier substrate instead of the package substrate. In some embodiments, a semiconductor chip may be mounted on a redistribution structure instead of the package substrate.

[0074] In this embodiment, in the step of forming a molding member that covers a semiconductor chip on a package substrate (S20), the molding member is formed using the resin composition according to this embodiment.

[0075] In some embodiments, the process of forming a molding member using a resin composition may be a transfer molding method. A package substrate and a semiconductor chip are placed in the cavity of the transfer mold, and the resin composition according to this embodiment is poured into the transfer mold and cured to form the molding member. In order to pour the resin composition into the cavity of the transfer mold, the resin composition is in the form of a tablet or pellet.

[0076] In some embodiments, the process of forming a molded member using a resin composition may be a compression molding method. A granular or powdered resin composition is placed into the cavity of a mold die and the resin composition is transformed into a gel state. Subsequently, the package substrate and semiconductor chip are brought into close contact with the cavity and cured to form the molded member.

[0077] The semiconductor package is completed by carrying out the process described above.

[0078] According to the technical concept of the present invention, the resin composition for the molding member contains phase-change material composite particles, and the phase-change material composite particles include core particles containing the phase-change material and a shell layer disposed on the surface of the core particles. Because the phase-change material composite particles contain a phase-change material that absorbs heat generated during the operation of the semiconductor chip and undergoes a phase change, the semiconductor package containing the cured resin composition as a molding member has excellent heat dissipation characteristics. Furthermore, because the molding member has improved strength (toughness) due to its low modulus, it is possible to prevent damage to the semiconductor chip due to external stress and deformation, thereby improving the reliability of the semiconductor package.

[0079] Although embodiments of the present invention have been described in detail above with reference to the drawings, the present invention is not limited to the embodiments described above, and can be modified and implemented in various ways without departing from the technical spirit of the present invention. [Explanation of Symbols]

[0080] 1. Semiconductor package 10 Package substrates 20 semiconductor chips 30 Molding components 32 Matrix 34 Filling material 36 Phase-change material composite particles CP core particles SL shell layer

Claims

1. A resin composition for forming a molding component included in a semiconductor package, 2-10% by weight epoxy resin, 2-10% by weight of a hardening agent, 50-90% by weight of filler, 5-20% by weight of phase-change material composite particles, It contains 0-5% by weight of additives, The aforementioned phase-change material composite particles are Core particles containing phase change material, A resin composition characterized by comprising a shell layer made of an organic or inorganic material surrounding the surface of the core particles.

2. The resin composition according to claim 1, characterized in that the core particles include at least one of paraffin, glycol, fatty acid, ester, and derivatives thereof.

3. The resin composition according to claim 1, characterized in that the core particles contain at least one of n-heptadecane, n-octadecane, n-nonadecane, n-eicosane, polyethylene glycol, stearic acid, palmitic acid, lauric acid, and derivatives thereof.

4. The resin composition according to claim 1, characterized in that the shell layer comprises at least one of polyethylene, polypropylene, polyamide, polycarbonate, polyurethane, polysiloxane, polyacrylate, polyester, polyimide, and derivatives thereof.

5. The resin composition according to claim 1, characterized in that the shell layer comprises at least one of alumina, magnesium oxide, aluminum nitride, and boron nitride.

6. The resin composition according to claim 1, characterized in that the core particles contain a substance having a melting point in the range of 20°C to 100°C.

7. The resin composition according to claim 1, characterized in that the core particles have a particle size of 1 to 100 μm.

8. The shell layer completely surrounds the surface of the core particle, The resin composition according to claim 1, characterized in that the shell layer has a thickness of 1 to 10 μm.

9. The filler comprises at least one of silica, alumina, magnesium oxide, aluminum nitride, and boron nitride. The resin composition according to claim 1, characterized in that the filler has a particle size of 0.1 to 100 μm.

10. Semiconductor chips and The semiconductor chip comprises a molding member disposed on at least one of its top, side, and bottom surfaces, The molding member is polymer matrix and Dispersed within the polymer matrix is ​​a filler containing at least one of silica, alumina, magnesium oxide, aluminum nitride, and boron nitride, The polymer matrix contains a plurality of phase-change material composite particles, Each of the aforementioned plurality of phase-change material composite particles is Core particles containing phase change material, A semiconductor package characterized by comprising a shell layer made of an organic or inorganic material surrounding the surface of the core particles.

11. The semiconductor package according to claim 10, characterized in that the polymer matrix includes an epoxy resin.

12. The semiconductor package according to claim 10, characterized in that the core particles include at least one of paraffin, glycol, fatty acid, ester, and derivatives thereof.

13. The semiconductor package according to claim 10, characterized in that the core particles include at least one of n-heptadecane, n-octadecane, n-nonadecane, n-eicosane, polyethylene glycol, stearic acid, palmitic acid, lauric acid, and derivatives thereof.

14. The semiconductor package according to claim 10, characterized in that the shell layer comprises at least one of polyethylene, polypropylene, polyamide, polycarbonate, polyurethane, polysiloxane, polyacrylate, polyester, polyimide, and derivatives thereof.

15. The semiconductor package according to claim 10, characterized in that the shell layer comprises at least one of alumina, magnesium oxide, aluminum nitride, and boron nitride.

16. The semiconductor package according to claim 10, characterized in that the core particles include a substance having a melting point in the range of 20°C to 100°C.

17. The semiconductor package according to claim 10, characterized in that the core particles have a particle size of 1 to 100 μm.

18. The shell layer completely surrounds the surface of the core particle, The semiconductor package according to claim 10, characterized in that the shell layer has a thickness of 1 to 10 μm.

19. The semiconductor package according to claim 10, characterized in that the filler has a particle size of 0.1 to 100 μm.

20. Package substrate and A semiconductor chip mounted on the aforementioned package substrate, The package substrate comprises a molding member that surrounds the top and side surfaces of the semiconductor chip, The molding member is Polymer matrix on an epoxy resin substrate, A filler dispersed within the polymer matrix, The polymer matrix contains a plurality of phase-change material composite particles, Each of the aforementioned plurality of phase-change material composite particles is Core particles containing phase change material, The core particle comprises a shell layer surrounding its surface, The core particles comprise at least one of paraffin, glycol, fatty acid, ester, and derivatives thereof. The aforementioned shell layer is At least one of polyethylene, polypropylene, polyamide, polycarbonate, polyurethane, polysiloxane, polyacrylate, polyester, polyimide, and derivatives thereof, or It comprises at least one of alumina, magnesium oxide, aluminum nitride, and boron nitride, The semiconductor package is characterized in that the filler material comprises at least one of silica, alumina, magnesium oxide, aluminum nitride, and boron nitride.

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