Composition, method for processing metal-containing film, and method for manufacturing electronic device

Abstract

The present invention provides a composition, a method for processing a metal-containing film, and a method for manufacturing an electronic device. [Solution] A composition comprising an oxidizing agent, an acid, and an etching modifier, wherein the etching modifier comprises at least one of a compound represented by the following chemical formula 1 and a polymer containing repeating units represented by the following chemical formula 2; a method for processing a metal-containing film using the same; and a method for manufacturing an electronic device using the same. JPEG2026116238000019.jpg45170 For explanations relating to chemical formulas 1 and 2, please refer to those provided in this specification.

Description

[Technical Field]

[0001] The present invention relates to a composition, a method for treating a metal-containing film using the same, and a method for manufacturing an electronic device using the same. [Background technology]

[0002] To meet consumer demands for superior performance and low cost, there is a need for increased integration density and improved reliability of semiconductor devices. As the integration density of semiconductor devices increases, damage to the components of the semiconductor device during the manufacturing process has a greater impact on the reliability and electrical characteristics of the semiconductor memory device. In particular, various processing steps, such as etching, cleaning, and polishing, are performed on a predetermined film (e.g., a metal-containing film) during the semiconductor device manufacturing process. There is a persistent need for compositions with appropriate etching rates and other properties to effectively perform these metal-containing film processing steps. [Overview of the project] [Problems that the invention aims to solve]

[0003] The problem that this invention aims to solve is to provide a composition that enables effective etching rate control for various metal-containing films, a method for processing metal-containing films using the same, and a method for manufacturing electronic devices using the same. [Means for solving the problem]

[0004] According to one aspect, It comprises an oxidizing agent, an acid, and an etching controller. The etching modifier is provided as a composition comprising at least one of a compound represented by the following chemical formula 1 and a polymer containing repeating units represented by the following chemical formula 2:

[0005] [ka]

[0006]

Chem.

[0007] In the above Chemical Formulas 1 and 2, R1 and R2 are each independently hydrogen, a halogen atom, *-OH, *-SH, or *-C(=O)OH; a halogen atom, *-OH, *-SH, *-C(=O)OH, a C1-C 30 alkyl group, a C2-C 30 alkenyl group, a C1-C 30 alkoxy group, a C1-C 30 alkylthio group, or a C1-C substituted or unsubstituted with any combination thereof 30 alkyl group, a C2-C 30 alkenyl group, a C1-C 30 alkoxy group, a C1-C 30 alkylthio group, a C3-C 30 carbocyclic group, or a C1-C 30 heterocyclic group; or *-N(R 13 )(R 14 ); and R 11 ~R 14 are each independently hydrogen, a halogen atom, *-OH, *-SH, or *-C(=O)OH; or a halogen atom, *-OH, *-SH, *-C(=O)OH, a C1-C 30 alkyl group, a C2-C 30 alkenyl group, a C1-C 30 alkoxy group, a C1-C 30 alkylthio group, or a C1-C substituted or unsubstituted with any combination thereof 30 alkyl group, a C2-C 30 alkenyl group, a C1-C 30 alkoxy group, a C1-C 30 alkylthio group, a C3-C 30 carbocyclic group, or a C1-C 30 heterocyclic group; and L1 to L3 are independent of each other. Single bond, O, or S; or Halogen atom, *-OH, *-SH, *-C(=O)OH, C1-C 30 Alkyl alkyl group, C2-C 30 Alkenyl group, C1-C 30 Alkoxy group, C1-C 30 C1-C 30 Alkylene group, C2-C 30 Alkenylene group, C3-C 30 Carbon ring group, or C1-C 30 Heterocyclic group; a1 to a3 are mutually independent integers between 1 and 30. * and *' are bonding sites with adjacent atoms.

[0008] According to other embodiments, A step of preparing a substrate provided with a metal-containing film including a first region and a second region; and The step of bringing the metal-containing film into contact with the composition; The first and second regions independently contain titanium (Ti), indium (In), aluminum (Al), lanthanum (La), scandium (Sc), gallium (Ga), tungsten (W), molybdenum (Mo), ruthenium (Ru), zinc (Zn), hafnium (Hf), cobalt (Co), copper (Cu), or any combination thereof. A method for processing a metal-containing film is provided, wherein the substance contained in the first region and the substance contained in the second region are different from each other.

[0009] In another embodiment, a method for manufacturing an electronic element including a transistor, The aforementioned transistor is Channels and The channel is electrically connected to a source and a drain, which are arranged at a distance from each other. Terminal gate and, The gate insulating film is disposed between the gate electrode and the channel, The method for manufacturing the aforementioned electronic element is as follows: A step of providing a barrier layer comprising a metal nitride, a metal oxynitride, or a combination thereof, The steps include providing a conductive layer containing a conductive metal, A method for manufacturing an electronic element is provided, which includes the steps of bringing the barrier layer and the conductive layer into contact with a composition, and etching a part of the barrier layer and a part of the conductive layer to form a gate electrode. [Effects of the Invention]

[0010] Since the aforementioned composition allows for easy control of the etching rate for various metal-containing films, it can be effectively used in various processing steps for the metal-containing films, such as etching, cleaning, and polishing. By processing the metal-containing films using the aforementioned composition, high-quality electronic devices and / or electronic apparatus can be manufactured. [Brief explanation of the drawing]

[0011] [Figure 1A] This diagram briefly illustrates one embodiment of a method for treating metal-containing films. [Figure 1B] This is a simplified diagram showing the surface of the metal-containing film 20A in Figure 1A, which may come into contact with composition 30. [Figure 2] This diagram briefly illustrates one embodiment of a method for treating metal-containing films. [Figure 3] This diagram briefly illustrates another embodiment of the method for processing metal-containing films. [Figure 4] This diagram briefly illustrates another embodiment of the method for processing metal-containing films. [Figure 5] This is a schematic plan view of an electronic element according to an exemplary embodiment. [Figure 6A] Figure 5 is a perspective view showing one embodiment of the electronic device illustrated. [Figure 6B]Figure 5 is a perspective view showing another embodiment of the electronic device illustrated. [Figure 7] Figure 6A is a simplified diagram illustrating part of the manufacturing process of the transistor structure shown. [Figure 8] Figure 6A is a simplified diagram illustrating part of the manufacturing process of the transistor structure shown. [Figure 9] Figure 6A is a simplified diagram illustrating part of the manufacturing process of the transistor structure shown. [Figure 10] This is a flowchart showing one embodiment of an electronic device manufacturing method. [Modes for carrying out the invention]

[0012] metal-containing film The metal-containing film may contain alkali metals (e.g., sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.), alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.), lanthanide metals (e.g., lanthanum (La), europium (Eu), terbium (Tb), ytterbium (Yb), etc.), transition metals (e.g., scandium (Sc), yttrium (Y), titanium (Ti), zirconium (Zr), etc.), and other metals. These may include phnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), nickel (Ni), copper (Cu), silver (Ag), zinc (Zn), etc., transition metals (e.g., aluminum (Al), gallium (Ga), indium (In), thallium (Tl), tin (Sn), bismuth (Bi), etc.), or any combination thereof.

[0013] According to one embodiment, the metal-containing film may include titanium (Ti), indium (In), aluminum (Al), lanthanum (La), scandium (Sc), gallium (Ga), tungsten (W), molybdenum (Mo), ruthenium (Ru), zinc (Zn), hafnium (Hf), cobalt (Co), copper (Cu), or any combination thereof.

[0014] In another embodiment, the metal-containing film may contain two or more different metals.

[0015] In another embodiment, the metal-containing film may contain titanium.

[0016] In further embodiments, the metal-containing film may contain i) titanium (Ti), and ii) optionally further contain indium (In), aluminum (Al), lanthanum (La), scandium (Sc), gallium (Ga), tungsten (W), molybdenum (Mo), ruthenium (Ru), zinc (Zn), hafnium (Hf), silicon (Si), or any combination thereof.

[0017] The metal-containing film may include a metal, a metal nitride, a metal oxide, a metal oxynitride, or any combination thereof.

[0018] According to one embodiment, the metal-containing film comprises a metal, a metal nitride, a metal oxide, a metal oxynitride, or any combination thereof, wherein each of the metal, the metal of the metal nitride, the metal of the metal oxide, and the metal of the metal oxynitride may include titanium (Ti), indium (In), aluminum (Al), lanthanum (La), scandium (Sc), gallium (Ga), tungsten (W), molybdenum (Mo), ruthenium (Ru), zinc (Zn), hafnium (Hf), cobalt (Co), copper (Cu), or any combination thereof.

[0019] In other embodiments, the metal-containing film may include metal nitrides, metal oxynitrides, or combinations thereof (e.g., titanium nitrides, titan oxynitrides, or combinations thereof).

[0020] In further embodiments, the metal-containing film may contain the aforementioned metals (for example, conductive metals such as tungsten, molybdenum, and ruthenium).

[0021] In further embodiments, the metal-containing film may include i) metal nitrides, metal oxynitrides, or combinations thereof as described above (e.g., titanium nitride, titan oxynitride, or combinations thereof), and ii) conductive metals (e.g., conductive metals such as tungsten, molybdenum, and ruthenium).

[0022] In further embodiments, the metal-containing film comprises titanium nitride, titan oxynitride, or a combination thereof, and may further comprise tungsten, molybdenum, ruthenium, or any combination thereof, in addition to titanium nitride, titan oxynitride, or a combination thereof. Each of the titanium nitride and titan oxynitride may optionally further comprise indium, aluminum, lanthanum, scandium, gallium, silicon, or any combination thereof.

[0023] In further embodiments, the metal-containing film may include titanium nitride, titanium nitride further containing aluminum (e.g., TiAlN), titanium nitride further containing lanthanum, titanium nitride further containing silicon (e.g., TiSiN), and the like.

[0024] The metal-containing film may be a single-layer structure containing one or more substances, or a multilayer structure containing different substances. The multiple films contained in the multilayer structure may be stacked vertically or arranged horizontally on the substrate. The single-layer and multilayer structures may have various three-dimensional patterns (e.g., via holes, trenches, etc.).

[0025] According to one embodiment, the metal-containing film comprises a first region and a second region, the first region and the second region independently comprising titanium (Ti), indium (In), aluminum (Al), lanthanum (La), scandium (Sc), gallium (Ga), tungsten (W), molybdenum (Mo), ruthenium (Ru), zinc (Zn), hafnium (Hf), cobalt (Co), copper (Cu), or any combination thereof, wherein the substances contained in the first region and the substances contained in the second region may be different from each other.

[0026] According to other embodiments, the first region may include titanium.

[0027] In further embodiments, the first region may include i) titanium (Ti), and ii) in addition to titanium, optionally further include indium (In), aluminum (Al), lanthanum (La), scandium (Sc), gallium (Ga), tungsten (W), molybdenum (Mo), ruthenium (Ru), zinc (Zn), hafnium (Hf), silicon (Si), or any combination thereof.

[0028] In further embodiments, the second region may include tungsten (W), molybdenum (Mo), ruthenium (Ru), or any combination thereof.

[0029] In further embodiments, the first region may include titanium (Ti), indium (In), aluminum (Al), lanthanum (La), scandium (Sc), gallium (Ga), or any combination thereof, and the second region may include tungsten (W), molybdenum (Mo), ruthenium (Ru), or any combination thereof.

[0030] In further embodiments, the first region may include a metal nitride, a metal oxynitride, or a combination thereof, and the second region may include a conductive metal.

[0031] For example, the first region may have i) a single-layer structure of a metal nitride film, ii) a single-layer structure of a metal oxynitride film, or iii) a double-layer structure of a metal nitride film and a metal oxynitride film.

[0032] In further embodiments, the first region comprises a titanium nitride, a titan oxynitride, or a combination thereof, wherein each of the titanium nitride and titan oxynitride may further optionally comprise indium (In), aluminum (Al), lanthanum (La), scandium (Sc), gallium (Ga), silicon (Si), or any combination thereof.

[0033] In further embodiments, the first region may include titanium nitride, titanium nitride further containing aluminum (e.g., TiAlN), titanium nitride further containing lanthanum, titanium nitride further containing silicon (e.g., TiSiN), and the like. In this specification, etching of any film means that some or more of the material constituting the film is removed.

[0034] composition The composition may include an oxidizing agent, an acid, and an etching controller.

[0035] The above composition can be used in a variety of processing steps for metal-containing films as described herein, such as etching, cleaning, and polishing.

[0036] The aforementioned composition may further contain water.

[0037] According to one embodiment, the composition substantially does not contain a fluorine-containing compound. Although not limited by any particular theory, if the composition contains a fluorine-containing compound, when the metal-containing film is treated with it, adjacent materials located adjacent to the metal-containing film, such as various oxides, may be damaged, leading to a decrease in the performance of electronic and / or semiconductor devices. For example, the composition contains a fluorine-containing compound, and the content of the fluorine-containing compound is such that it does not alter the essential properties of the composition (for example, 10 per 100 wt% of the composition). -2 wt% or less, 10 -3 wt% or less, 10 -4 wt% or less, 10 -7 wt%~10 -2 wt%, 10 -6 wt%~10 -2 wt%, 10 -5 wt%~10 -2 wt%, 10 -7 wt%~10 -3 wt%, 10 -6 wt%~10 -3 wt%, or 10 -5 wt%~10 -3 (e.g., wt%). As yet another example, the composition does not contain a fluorine-containing compound. For example, the content of the fluorine-containing compound in the composition is 0 wt%. The fluorine-containing compound means any compound that contains F and is dissociable from an aqueous solvent, such as HF and NH4F.

[0038] According to one embodiment, the composition comprises an oxidizing agent, an acid, an etching modifier, and water.

[0039] Oxidizing agent The oxidizing agent plays a role in etching part or more of the metal-containing film and may include hydrogen peroxide, an iodine-containing compound, nitric acid, ammonium sulfate, or a combination thereof.

[0040] According to one embodiment, the oxidizing agent includes hydrogen peroxide, periodic acid, iodic acid, nitric acid, ammonium sulfate, or any combination thereof.

[0041] According to other embodiments, the oxidizing agent includes hydrogen peroxide.

[0042] In yet another embodiment, the oxidizing agent is hydrogen peroxide.

[0043] In further embodiments, the composition substantially does not contain a fluorine-containing compound as an oxidizing agent. Although not intended to be limited by any particular theory, if the composition contains a fluorine-containing compound as an oxidizing agent, when the metal-containing film is treated with it, adjacent materials located adjacent to the metal-containing film, such as various oxides, may be damaged, leading to a decrease in the performance of electronic and / or semiconductor devices.

[0044] The content (mass) of the oxidizing agent is, for example, 0.001wt% to 10wt%, 0.001wt% to 7wt%, 0.001wt% to 5wt%, 0.001wt% to 3wt%, 0.001wt% to 1wt%, 0.001wt% to 0.7wt%, 0.001wt% to 0.5wt%, 0.005wt% to 10wt%, and 0.005wt% to 7wt% per 100wt% of the composition. t%, 0.005wt%~5wt%, 0.005wt%~3wt%, 0.005wt%~1wt%, 0.005wt%~0.7wt%, 0.005wt%~0.5wt%, 0.0 1wt%~10wt%, 0.01wt%~7wt%, 0.01wt%~5wt%, 0.01wt%~3wt%, 0.01wt%~1wt%, 0.01wt%~0.7wt%, 0. 01wt%~0.5wt%, 0.05wt%~10wt%, 0.05wt%~7wt%, 0.05wt%~5wt%, 0.05wt%~3wt%, 0.05wt%~1wt%, 0 .05wt%~0.7wt%, 0.05wt%~0.5wt%, 0.1wt%~10wt%, 0.1wt%~7wt%, 0.1wt%~5wt%, 0.1wt%~3wt%, 0. These ranges from 1 wt% to 1 wt%, 0.1 wt% to 0.7 wt%, 0.1 wt% to 0.5 wt%, 0.3 wt% to 10 wt%, 0.3 wt% to 7 wt%, 0.3 wt% to 5 wt%, 0.3 wt% to 3 wt%, 0.3 wt% to 1 wt%, 0.3 wt% to 0.7 wt%, 0.5 wt% to 0.7 wt%, 0.3 wt% to 0.5 wt%, or 0.4 wt% to 0.6 wt%.

[0045] acid The acid, together with the oxidizing agent, can control the etching rate while etching a portion or more of the metal-containing film.

[0046] The acid may be a single acid or a mixture of two or more different acids.

[0047] The aforementioned acid may include inorganic acids, organic acids, or any combination thereof.

[0048] for example, i) Does the acid include an inorganic acid? ii) The acid contains an organic acid, or iii) The acid includes inorganic acids and organic acids.

[0049] For example, the acid may include an inorganic acid.

[0050] According to one embodiment, the inorganic acid includes phosphoric acid, sulfuric acid, hydrochloric acid, or any combination thereof.

[0051] According to other embodiments, the inorganic acid includes phosphoric acid.

[0052] As yet another example, the acid may include an organic acid.

[0053] According to one embodiment, the organic acid comprises at least one of a carboxylic acid, a sulfonic acid, and a phosphonic acid.

[0054] According to other embodiments, the organic acid includes a carboxylic acid. For example, the carboxylic acid includes at least one of an amine-free carboxylic acid and an amine-containing carboxylic acid. In yet another example, the number of *-C(=O)OH groups in the carboxylic acid is selected from an integer between 1 and 10 or between 1 and 5.

[0055] In further embodiments, the organic acid includes a nonamine carboxylic acid. In this specification, “nonamine carboxylic acid” means a carboxylic acid that does not contain a molecule represented as *-N(R)-*' and a molecule represented as *-N(R)(R') (where R and R' are hydrogen or any substituent, and * and *' are bonding sites with adjacent atoms).

[0056] In further embodiments, the organic acid does not contain an amine-containing carboxylic acid. In this specification, “amine-containing carboxylic acid” means a carboxylic acid containing a molecule represented as *-N(R)-*' and / or a molecule represented as *-N(R)(R') (where R and R' are hydrogen or any substituent, and * and *' are bonding sites with adjacent atoms).

[0057] In further embodiments, the organic acid includes a monocarboxylic acid, a dicarboxylic acid, a tricarboxylic acid, or any combination thereof. The number of carbon atoms in each of the monocarboxylic acid, dicarboxylic acid, and tricarboxylic acid is 1 to 31, 1 to 20, or 1 to 10, respectively.

[0058] In further embodiments, the organic acid includes a nonamine monocarboxylic acid, a nonamine dicarboxylic acid, a nonamine tricarboxylic acid, or any combination thereof.

[0059] According to another embodiment, the organic acid is HCOOH; and The compound comprises at least one of the following: an aliphatic compound having 1 to 30 carbon atoms (e.g., 1 to 20 or 1 to 15 carbon atoms) or an aromatic compound having 6 to 30 carbon atoms (e.g., 6 to 15 or 6 to 10 carbon atoms), substituted with at least one carboxylic acid group (*-COOH) (e.g., one, two, or three carboxylic acid groups).

[0060] At least one hydrogen atom among the aliphatic compound and the aromatic compound is optionally a hydroxyl group, a thiol group, or a C1-C 10 Alkyl groups (e.g., C1-C5 alkyl groups), C1-C 10 Alkoxy groups (e.g., C1-C5 alkoxy groups), C1-C 10 It may be further substituted with alkylthio groups (e.g., C1-C5 alkylthio groups), phenyl groups, or any combination thereof.

[0061] In further embodiments, the aliphatic compound is a saturated aliphatic compound (e.g., alkanes, cycloalkanes, etc.) or an unsaturated aliphatic compound (e.g., alkenes, alkynes, cycloalkenes, etc.).

[0062] In further embodiments, the aliphatic compound is an acyclic aliphatic compound (e.g., alkanes, alkenes, alkynes, etc.) or a cyclic aliphatic compound (e.g., cycloalkanes, cycloalkenes, adamantane, norbornane, etc.).

[0063] In further embodiments, the aliphatic compound is a linear aliphatic compound (e.g., CH3-CH2-CH2-CH2-CH3, etc.) or a branched aliphatic compound (e.g., CH3-CH(CH3)-CH2-CH3, CH3-C(CH3)2-CH3, etc.).

[0064] In yet another embodiment, the aromatic compound is benzene.

[0065] In further embodiments, the organic acid includes formic acid, acetic acid (CH3COOH), propionic acid, butyric acid, valeric acid, lauric acid, oxalic acid, malonic acid, glutaric acid, adipic acid, gallic acid, succinic acid, malic acid, maleic acid, crotonic acid, fumaric acid, ascorbic acid, glutamic acid, citric acid, tartaric acid, glycolic acid, lactic acid, benzoic acid, salicylic acid, or any combination thereof.

[0066] Furthermore, according to other embodiments, i) The acid contains phosphoric acid, or ii) The acid includes phosphoric acid and a nonamine carboxylic acid (for example, acetic acid). Furthermore, according to other embodiments, i) Does the acid include an inorganic acid? ii) The acid contains an organic acid, or iii) The acid includes inorganic acids and organic acids, The inorganic acid includes phosphoric acid, and the organic acid includes a carboxylic acid (for example, acetic acid).

[0067] The acid content (mass) is, for example, per 100 wt% of the composition, 10 wt% to 90 wt%, 10 wt% to 85 wt%, 10 wt% to 80 wt%, 10 wt% to 75 wt%, 10 wt% to 70 wt%, 30 wt% to 90 wt%, 30 wt% to 85 wt%, 30 wt% to 80 wt%, 30 wt% to 75 wt%, The percentages are 30wt%~70wt%, 50wt%~90wt%, 50wt%~85wt%, 50wt%~80wt%, 50wt%~75wt%, 50wt%~70wt%, 60wt%~90wt%, 60wt%~85wt%, 60wt%~80wt%, 60wt%~75wt%, or 60wt%~70wt%.

[0068] According to one embodiment, the acid includes an inorganic acid, and the content (mass) of the inorganic acid is, for example, 10 wt% to 85 wt%, 15 wt% to 85 wt%, 20 wt% to 85 wt%, 25 wt% to 85 wt%, 30 wt% to 85 wt%, 35 wt% to 85 wt%, 40 wt% to 85 wt%, 45 wt% to 85 wt%, 50 wt% to 85 wt%, and 55 wt% per 100 wt% of the composition. %~85wt%, 10wt%~80wt%, 15wt%~80wt%, 20wt%~80wt%, 25wt%~80wt%, 30wt%~80wt%, 35wt%~80wt%, 40 wt%~80wt%, 45wt%~80wt%, 50wt%~80wt%, 55wt%~80wt%, 10wt%~75wt%, 15wt%~75wt%, 20wt%~75wt%, 2 5wt%~75wt%, 30wt%~75wt%, 35wt%~75wt%, 40wt%~75wt%, 45wt%~75wt%, 50wt%~75wt%, 55wt%~75wt% , 10wt%~70wt%, 15wt%~70wt%, 20wt%~70wt%, 25wt%~70wt%, 30wt%~70wt%, 35wt%~70wt%, 40wt%~70w The values ​​are t%, 45wt%~70wt%, 50wt%~70wt%, 55wt%~70wt%, 10wt%~65wt%, 15wt%~65wt%, 20wt%~65wt%, 25wt%~65wt%, 30wt%~65wt%, 35wt%~65wt%, 40wt%~65wt%, 45wt%~65wt%, 50wt%~65wt%, or 55wt%~65wt%.

[0069] According to other embodiments, the acid includes an organic acid, the content of which is 0.1wt% to 15wt%, 0.5wt% to 15wt%, 1wt% to 15wt%, 3wt% to 15wt%, 5wt% to 15wt%, 7wt% to 15wt%, 0.1wt% to 13wt%, 0.5wt% to 13wt%, 1wt% to 13wt%, 3wt% to 13wt%, 5wt% to 13wt%, or 7wt% to 13wt% per 100wt% of the composition.

[0070] In further embodiments, the acid comprises an organic acid and an inorganic acid, and the mass ratio of the organic acid to the inorganic acid is selected from the range of 1:1 to 1:20, 1:3 to 1:10, or 1:5 to 1:7. For example, the acid comprises an organic acid and an inorganic acid, and the mass ratio of the organic acid to the inorganic acid is 1:6.

[0071] In further embodiments, the acid comprises an inorganic acid and an organic acid, and the mass ratio of the inorganic acid to the organic acid is selected from the range of 1:1 to 1:20, 1:3 to 1:10, or 1:5 to 1:7.

[0072] Etching modifier The etching modifier, together with the acid, can interact with various metal atoms in the metal-containing film that is being treated, and play a role in adjusting the etching rate and other parameters.

[0073] The etching modifier may include at least one polymer comprising a compound represented by the following chemical formula 1 and a repeating unit represented by the following chemical formula 2 (i.e., i) a compound represented by the following chemical formula 1, ii) a polymer comprising a repeating unit represented by the following chemical formula 2, or iii) a polymer comprising a compound represented by the following chemical formula 1 and a repeating unit represented by the following chemical formula 2):

[0074] [ka]

[0075] [ka]

[0076] In the aforementioned chemical formulas 1 and 2, R1 and R2 are independent of each other. Hydrogen, halogen atom, *-OH, *-SH, or *-C(=O)OH; Halogen atom, *-OH, *-SH, *-C(=O)OH, C1-C 30 Alkyl alkyl group, C2-C 30 Alkenyl group, C1-C 30 Alkoxy group, C1-C 30 C1-C 30 Alkyl alkyl group, C2-C 30 Alkenyl group, C1-C 30 Alkoxy group, C1-C 30 Alkylthio group, C3-C 30 Carbon ring group, or C1-C 30 Heterocyclic group; or *-N(R 13 )(R 14 ); and R 11 ~R 14 They are independent of each other, Hydrogen, halogen atom, *-OH, *-SH, or *-C(=O)OH; or Halogen atom, *-OH, *-SH, *-C(=O)OH, C1-C 30 Alkyl alkyl group, C2-C 30 Alkenyl group, C1-C 30 Alkoxy group, C1-C 30 C1-C 30 Alkyl alkyl group, C2-C 30 Alkenyl group, C1-C 30 Alkoxy group, C1-C 30 Alkylthio group, C3-C 30 Carbon ring group, or C1-C 30 Heterocyclic group; L1 to L3 are independent of each other. single bond, O, or S; or halogen atom, *-OH, *-SH, *-C(=O)OH, C1-C 30 alkyl group, C2-C 30 alkenyl group, C1-C 30 alkoxy group, C1-C 30 alkylthio group, or C1-C substituted or unsubstituted with any combination thereof 30 alkylene group, C2-C 30 alkenylene group, C3-C 30 carbocyclic group, or C1-C 30 heterocyclic group; and a1 to a3 are, independently of each other, integers from 1 to 30, each of * and *' is a bonding site with an adjacent atom.

[0077] According to one embodiment, i) the etching regulator contains the compound represented by the chemical formula 1, or ii) the etching regulator contains a polymer containing the repeating unit represented by the chemical formula 2, or iii) the etching regulator contains the compound represented by the chemical formula 1 and a polymer containing the repeating unit represented by the chemical formula 2.

[0078] According to one embodiment, in the chemical formulas 1 and 2, R1 and R2 are, independently of each other, *-OH, *-SH, or *-C(=O)OH; *-OH, *-SH, *-C(=O)OH, C1-C 10 alkyl group, C1-C 10 alkoxy group, C1-C 10 alkylthio group, or C1-C substituted or unsubstituted with any combination thereof 10 alkyl group, C1-C 10 alkoxy group, or C1-C 10 alkylthio group; or *-N(R 13 )(R 14 ); and

[0079] According to another embodiment, in Chemical Formulas 1 and 2, R1 and R2 are independently of each other, *-OH; *-OH, C1-C 10 an alkyl group substituted or unsubstituted with an alkoxy group or any combination thereof, C1-C 10 alkyl group (e.g., methyl group, ethyl group, etc.) or C1-C 10 alkoxy group (e.g., methoxy group, ethoxy group, etc.); or *-N(R 13 )(R 14 );.

[0080] According to still another embodiment, in Chemical Formula 2, R1 is *-N(R 13 )(R 14 ).

[0081] According to still another embodiment, in Chemical Formulas 1 and 2, R 11 ~R 14 are independently of each other, hydrogen, *-OH, *-SH, or *-C(=O)OH; or *-OH, *-SH, *-C(=O)OH, C1-C 10 alkyl group, C1-C 10 alkoxy group, C1-C 10 alkylthio group, or an alkyl group substituted or unsubstituted with any combination thereof, C1-C 10 alkyl group, C1-C 10 alkoxy group, or C1-C 30 alkylthio group;.

[0082] According to still another embodiment, R 11 ~R 14 in Chemical Formula 1 are independently of each other, hydrogen; or *-OH, C1-C 10 alkoxy group (e.g., methoxy group, ethoxy group, etc.), or an alkyl group substituted or unsubstituted with any combination thereof, C1-C 10 alkyl group (e.g., methyl group, ethyl group, etc.);.

[0083] Furthermore, according to another embodiment, the R of chemical formula 2 11 ~R 14 These are independent of each other: *-OH, C1-C 10 C1-C1 molecules substituted or unsubstituted with alkoxy groups (e.g., methoxy groups, ethoxy groups, etc.) or any combination thereof. 10 These are alkyl groups (for example, methyl groups, ethyl groups, etc.).

[0084] Furthermore, according to another embodiment, in the chemical formula 2, L1 to L3 are independent of each other. Single bond, O, or S; or *-OH, *-SH, *-C(=O)OH, C1-C 10 Alkyl alkyl group, C1-C 10 Alkoxy group, C1-C 10 A C1-C group substituted or unsubstituted with an alkylthio group, or any combination thereof. 10 Alkylene groups (for example, methylene groups, ethylene groups, etc.).

[0085] Furthermore, according to another embodiment, in the chemical formula 2, L1 to L3 are independent of each other. O or S; or *-OH, *-SH, *-C(=O)OH, C1-C 10 Alkyl alkyl group, C1-C 10 Alkoxy group, C1-C 10 A C1-C group substituted or unsubstituted with an alkylthio group, or any combination thereof. 10 Alkylene groups (for example, methylene groups, ethylene groups, etc.).

[0086] In another embodiment, in the chemical formula 1, a1 to a3, which are the respective numbers L1 to L3, are independent integers from 1 to 5 (for example, 1 or 2). When a1 is 2 or more, the 2 or more L1s may be the same or different from each other; when a2 is 2 or more, the 2 or more L2s may be the same or different from each other; and when a3 is 2 or more, the 2 or more L3s may be the same or different from each other.

[0087] Furthermore, according to another embodiment, in the chemical formula 2, L1 and L2 are independent of each other: *-OH, *-SH, *-C(=O)OH, C1-C 10 Alkyl alkyl group, C1-C 10 Alkoxy group, C1-C 10 A C1-C group substituted or unsubstituted with an alkylthio group, or any combination thereof. 10 These are alkylene groups (for example, methylene groups, ethylene groups, etc.), a1 and a2 are both 1. L3 is either O or S. a3 is 1.

[0088] Furthermore, according to another embodiment, the compound represented by chemical formula 1 is the compound represented by the following chemical formula 1A.

[0089] In another embodiment, the repeating unit represented by chemical formula 2 is the repeating unit represented by the following chemical formula 2A:

[0090] [ka]

[0091] In the aforementioned chemical formulas 1A and 2A, R 11 ~R 14 The descriptions relating to each of these are the same as those described in this specification. R 15 and R 16 The explanations relating to each of these are in this specification.13 This is similar to the explanation regarding the above, R 21 ~R 24 These are, independently of each other, hydrogen, halogen atom, *-OH, *-SH, *-C(=O)OH, and C1-C 30 Alkyl alkyl group, C2-C 30 Alkenyl group, C1-C 30 Alkoxy group, or C1-C 30 It is an alkylthio group, * and *' are bonding sites with adjacent atoms.

[0092] For example, R in the chemical formula 1A 11 ~R 16 They are independent of each other, Hydrogen; or *-OH, C1-C 10 C1-C1 molecules substituted or unsubstituted with alkoxy groups (e.g., methoxy groups, ethoxy groups, etc.) or any combination thereof. 10 Alkyl groups (e.g., methyl group, ethyl group, etc.).

[0093] As yet another example, R in chemical formula 2A 11 ~R 14 These are independent of each other: *-OH, C1-C 10 C1-C1 molecules substituted or unsubstituted with alkoxy groups (e.g., methoxy groups, ethoxy groups, etc.) or any combination thereof. 10 It is an alkyl group (for example, a methyl group, an ethyl group, etc.), R 21 ~R 24 These are, independently of each other, a hydrogen atom or a methyl group.

[0094] In further embodiments, the polymer containing the repeating unit represented by chemical formula 2 may further contain any repeating unit different from the repeating unit represented by chemical formula 2. For example, the polymer containing the repeating unit represented by chemical formula 2 may further contain repeating units derived from sulfur dioxide-containing compounds, repeating units derived from amide-containing compounds, repeating units derived from carboxylic acid-containing compounds, or any combination thereof. For example, the amide-containing compound may include acrylamide (CH2=CHC(O)NH2), methacrylamide (CH2=C(CH3)C(O)NH2), diacetone acrylamide, N,N-dimethylacrylamide, or any combination thereof, and the carboxylic acid-containing compound may include acrylic acid derived from C1-C30 alcohols, methacrylic acid derived from C1-C30 alcohols, unsaturated dicarboxylic acids with C1-C30 (e.g., maleic acid), or any combination thereof.

[0095] In further embodiments, the weight-average molecular weight of the polymer containing the repeating units represented by chemical formula 2 is, for example, 200 g / mol to 100,000 g / mol, 200 g / mol to 10,000 g / mol, 200 g / mol to 1,000 g / mol, or 200 g / mol to 500 g / mol. Alternatively, the number-average molecular weight of the polymer containing the repeating units represented by chemical formula 2 is, for example, 200 to 100,000, 200 to 10,000, 200 to 1,000, or 200 to 500. The weight-average molecular weight and number-average molecular weight can be measured, for example, using GPC (gel permeation chromatography) and are calculated values ​​using polystyrene.

[0096] In another embodiment, the compound represented by chemical formula 1 is one of the following compounds 1 to 19:

[0097] [ka]

[0098] In another embodiment, the polymer containing the repeating unit represented by chemical formula 2 is one of the following polymers P1 to P4:

[0099] [ka]

[0100] In the polymers P1 to P4, n is selected from any integer greater than or equal to 2 (for example, 2 to 100,000), and * and *' are bonding sites with adjacent atoms, respectively.

[0101] Each of the polymers P1 to P4 may have a weight-average molecular weight or a number-average molecular weight within the range described herein.

[0102] In this specification, C1-C 30 Alkyl and C1-C 10 Alkyl groups are linear or branched alkyl groups, such as methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, and tert-butyl groups.

[0103] In this specification, C1-C 30 Alkylene group and C1-C 10 Alkylene groups are linear or branched alkylene groups, such as methylene groups and ethylene groups.

[0104] In this specification, C2-C 30 Alkenyl group, C2-C 10 Alkenyl group, and C2-C 30 Each of the alkenylene groups is a C2-C group as described herein. 30 Alkyl alkyl group, C2-C 10 Alkyl groups, and C2-C 30 It has the same structure as an alkylene group, but contains at least one carbon-carbon double bond within the molecule.

[0105] In this specification, C1-C 30Alkoxy groups and C1-C 10 An alkoxy group is a group represented by *-OR' (where R' is C1-C as described herein). 30 Alkyl or C1-C 10 It is an alkyl group, and C1-C 30 Alkylthio group and C1-C 10 The alkylthio group is a group represented by *-SR' (where R' is C1-C as described herein). 30 Alkyl or C1-C 10 It is an alkyl group.

[0106] In this specification, C3-C 30 Examples of carbocyclic groups include cyclopentane, cyclohexane, benzene, and naphthalene groups.

[0107] In this specification, C1-C 30 Examples of heterocyclic groups include pyridine groups and pyrimidine groups.

[0108] The content (mass) of the etching modifier is as follows per 100 wt% of the composition: 0.01 wt% to 5 wt%, 0.01 wt% to 4 wt%, 0.01 wt% to 3 wt%, 0.01 wt% to 2 wt%, 0.01 wt% to 1.5 wt%, 0.01 wt% to 1 wt%, 0.05 wt% to 5 wt%, 0.05 wt% to 4 wt%, 0.05 wt% to 3 wt%, 0.05 wt% to 2 wt%, 0.0 The etching modifier is 5 wt% to 1.5 wt%, 0.05 wt% to 1 wt%, 0.1 wt% to 5 wt%, 0.1 wt% to 4 wt%, 0.1 wt% to 3 wt%, 0.1 wt% to 2 wt%, 0.1 wt% to 1.5 wt%, 0.1 wt% to 1 wt%, 0.5 wt% to 5 wt%, 0.5 wt% to 4 wt%, 0.5 wt% to 3 wt%, 0.5 wt% to 2 wt%, or 0.5 wt% to 1.5 wt%. If the etching modifier contains a polymer containing repeating units represented by chemical formula 2, the content of the polymer means the content of the solids of the polymer.

[0109] According to one embodiment, the etching modifier comprises a polymer containing a compound represented by chemical formula 1 and a repeating unit represented by chemical formula 2, and the mass ratio of the compound represented by chemical formula 1 to the polymer containing the repeating unit represented by chemical formula 2 (based on polymer solids content) is selected from the range of 1:1 to 1:100, 1:3 to 1:50, or 1:3 to 1:10. For example, the etching modifier comprises a polymer containing a compound represented by chemical formula 1 and a repeating unit represented by chemical formula 2, and the mass ratio of the compound represented by chemical formula 1 to the polymer containing the repeating unit represented by chemical formula 2 (based on polymer solids content) is 1:5.

[0110] pH The aforementioned compositions are 5.0 or less, 4.0 or less, 3.0 or less, 2.2 or less, 2.0 or less, 1.0 or less, 0.5 or less, 0 or less, -3.0 to 5.0, -3.0 to 4.0, -3.0 to 3.0, -3.0 to 2.2, -3.0 to 2.0, -3.0 to 1.0, -3.0 to 0.5, -3.0 to 0, -2.5 to 5.0, -2.5 to 4.0, -2.5 to 3.0, -2.5 to 2.2, -2.5 to 2.0, -2.5 to 1.0, -2.5 to 0.5, -2.5 to 0, -2.0 to 5.0, -2.0 to 4.0, -2.0 to 3.0, -2.0 to 2.2, -2.0 to 2.0, -2.0 to 1 It can have a pH of 0, -2.0~0.5, -2.0~0, -1.5~5.0, -1.5~4.0, -1.5~3.0, -1.5~2.2, -1.5~2.0, -1.5~1.0, -1.5~0.5, -1.5~0, -1.0~5.0, -1.0~4.0, -1.0~3.0, -1.0~2.2, -1.0~2.0, -1.0~1.0, -1.0~0.5, -1.0~0, -0.6~5.0, -0.6~4.0, -0.6~3.0, -0.6~2.2, -0.6~2.0, -0.6~1.0, -0.6~0.5, or -0.6~0. The composition having a pH within the aforementioned range allows for even smoother interaction between the etching modifier and the metal atoms in the metal-containing film.

[0111] According to one embodiment, the composition comprises 0.001 wt% to 10 wt% of an oxidizing agent, 10 wt% to 85 wt% of an acid, and 0.01 wt% to 3 wt% of an etching modifier.

[0112] According to other embodiments, the composition comprises 0.001 wt% to 5 wt% of an oxidizing agent, 10 wt% to 88 wt% of an acid, and 0.01 wt% to 5 wt% of an etching modifier.

[0113] In another embodiment, the composition comprises 0.001 wt% to 5 wt% of an oxidizing agent, 10 wt% to 85 wt% of an acid, and 0.01 wt% to 5 wt% of an etching modifier.

[0114] According to further embodiments, the composition can be used in metal-containing film processing steps, such as etching, cleaning, and polishing steps for metal-containing films. A description of the metal-containing film is provided herein.

[0115] Alternatively, the composition can be used as an etching by-product remover, a post-etch by-product remover, an ashing by-product remover, a cleaning composition, a photoresist (PR) remover, an etching composition for the packaging process, a cleaning agent for the packaging process, a wafer adhesive remover, an etchant, a post-etch residue stripper, an ashing residue cleaner, a photoresist residue stripper, a CMP cleaner, or a post-CMP cleaner.

[0116] Method for treating metal-containing films Using the composition described above, a metal-containing film comprising a first region and a second region, wherein the substances contained in the first region and the substances contained in the second region are different from each other, can be effectively treated. For descriptions relating to the metal-containing film, the first region, and the second region, please refer to the provisions of this specification.

[0117] According to one embodiment, the first region and the second region may independently contain titanium (Ti), indium (In), aluminum (Al), lanthanum (La), scandium (Sc), gallium (Ga), tungsten (W), molybdenum (Mo), ruthenium (Ru), zinc (Zn), hafnium (Hf), cobalt (Co), copper (Cu), or any combination thereof.

[0118] According to other embodiments, the first region may include titanium (Ti), indium (In), aluminum (Al), lanthanum (La), scandium (Sc), gallium (Ga), or any combination thereof, and the second region may include tungsten (W), molybdenum (Mo), ruthenium (Ru), or any combination thereof.

[0119] In further embodiments, the first region may include a metal nitride, a metal oxynitride, or a combination thereof, and the second region may include a conductive metal.

[0120] In further embodiments, the first region comprises a titanium nitride, a titan oxynitride, or a combination thereof, wherein each of the titanium nitride and titan oxynitride may further optionally comprise indium (In), aluminum (Al), lanthanum (La), scandium (Sc), gallium (Ga), silicon (Si), or any combination thereof.

[0121] Figures 1A and 12 are diagrams that briefly illustrate one embodiment of a method for treating a metal-containing film.

[0122] Referring to Figure 1A, a substrate 10 with a metal-containing film 20A is provided. Although not shown in Figure 1A, various circuit elements, for example, can be selectively placed between the substrate 10 and the metal-containing film 20A.

[0123] The metal-containing film 20A may include a first region 21 and a second region 22. The first region 21 and the second region 22 may be spaced apart from each other or partially or more in contact with each other, and the metal-containing film 20A may have a variety of patterns. The metal-containing film 20A, including the first region 21 and the second region 22, may be brought into contact with composition 30 to remove a portion of the metal-containing film 20A. For example, during etching, cleaning, and / or polishing processes of the metal-containing film 20A, the metal-containing film 20A may be brought into contact with composition 30. The composition 30 includes oxidizing agents, acids, and etching modifiers as described herein, for a detailed description thereof, refer to the foregoing.

[0124] According to one embodiment, the etching rate ratio obtained by dividing the first etching rate at which composition 30 etches the first region 21 by the second etching rate at which composition 30 etches the second region 22 is 0.04 or greater. For example, the etching rate ratio obtained by dividing the first etching rate at which composition 30 etches the first region 21 by the second etching rate at which composition 30 etches the second region 22 is 0.05 or more, 0.06 or more, 0.04 to 1.0, 0.05 to 1.0, 0.06 to 1.0, 0.04 to 0.5, 0.05 to 0.5, 0.06 to 0.5, 0.04 to 0.3, 0.05 to 0.3, 0.06 to 0.3, 0.04 to 0.2, 0.05 to 0.2, 0.06 to 0.2, 0.04 to 0.15, 0.05 to 0.15, 0.06 to 0.15, or 0.06 to 0.13.

[0125] Figure 1B is a schematic diagram showing the surface of a metal-containing film 20A that can come into contact with composition 30, wherein the etching area ratio, obtained by dividing the first area of ​​the first region 21 exposed for contact with composition 30 by the second area of ​​the second region 22 exposed for contact with composition 30, is 0.05 to 1.0, 0.05 to 0.9, 0.05 to 0.7, 0.05 to 0.5, 0.05 to 0.4, 0.05 to 0.3, or 0.05 to 0.2.

[0126] When the metal-containing film 20A comes into contact with the composition 30, the interaction of the oxidizing agent, acid, and etching modifier contained in the composition 30 controls the high reactivity of the metal contained in the metal-containing film 20A (for example, a metal such as molybdenum contained in the second region 22). As a result, the etching rate of the region containing the relatively highly reactive metal among the first region 21 and the second region 22 (for example, the etching rate of the second region 22) is appropriately controlled, and a portion of the first region 21 and a portion of the second region 22 are etched, forming a metal-containing film pattern 20 having a substantially flat surface (for example, with virtually no step difference between the first region 21 and the second region 22), as shown in Figure 2.

[0127] Figures 3 and 4 are diagrams that briefly illustrate other embodiments of the method for processing the metal-containing film.

[0128] Referring to Figure 3, a substrate 10 is provided which, in addition to the metal-containing film 20A, has an additional material 40 positioned adjacent to the metal-containing film 20A. For explanations of the metal-containing film 20A and the substrate 10 in Figure 3, please refer to the description in Figure 1A.

[0129] The additional substance 40 in Figure 3 may be positioned at a distance from the metal-containing film 20A, or in partial or greater contact with it. In this specification, the additional substance 40 means a substance that is positioned adjacent to the metal-containing film 20A, in addition to the metal-containing film 20A, and is present in a region affected by composition 30 when the metal-containing film 20A is treated with composition 30.

[0130] The additional material 40 may include at least one of insulating materials and semiconductor materials. The insulating materials and semiconductor materials may include a variety of known materials.

[0131] The insulating material may include various oxides, nitrides, oxynitrides, high dielectric materials, or combinations thereof. For example, the insulating material may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, hafnium oxynitride, zirconium oxide, or combinations thereof. The hafnium oxide and hafnium oxynitride may further optionally include Si, Ta, Ti, Zr, or any combination thereof. Further examples of insulating materials may include TEOS (tetraethyl orthosilicate), HSQ (hydrogen silsesquioxane), MSQ (methyl silsesquioxane), etc.

[0132] The semiconductor material may include, for example, as a material contained in a channel, a group IV semiconductor material such as silicon, germanium (Ge), silicon germanium (SiGe), and silicon carbide (SiC); a group III-V semiconductor material such as gallium arsenide (GaAs), indium arsenide (InAs), and indium phosphide (InP); an oxide semiconductor; a nitride semiconductor; an oxynitride semiconductor; and so on. The oxide semiconductor may include, for example, IGZO (Indium Gallium Zinc Oxide), ITZO (Indium Tin Zinc Oxide), ITGO (Indium Tin Gallium Oxide), IWO (Indium Tungsten Oxide), ITO (Indium Tin Oxide), ZnO, Cu2O, or any combination thereof.

[0133] As shown in Figure 3, the metal-containing film 20A, including the first region 21 and the second region 22, and the additional substance 40 may be brought into contact with composition 30, thereby removing a portion of the metal-containing film 20A. For example, during etching, cleaning, and / or polishing processes of the metal-containing film 20A, including the first region 21 and the second region 22, the metal-containing film 20A may be brought into contact with composition 30. The composition 30 includes oxidizing agents, acids, and etching modifiers as described herein, for a detailed description thereof, refer to the provisions of this specification.

[0134] When the metal-containing film 20A comes into contact with the composition 30, a portion of the metal-containing film 20A may be removed. Specifically, when the metal-containing film 20A comes into contact with the composition 30, the interaction of the oxidizing agent, acid, and etching modifier contained in the composition 30 controls the high reactivity of the metal contained in the metal-containing film 20A (for example, a metal such as molybdenum contained in the second region 22). As a result, the etching rate of the region containing the relatively more reactive metal among the first region 21 and the second region 22 (for example, the etching rate of the second region 22) is appropriately controlled, and a portion of the first region 21 and a portion of the second region 22 are etched, forming a metal-containing film pattern 20 having a substantially flat surface (for example, with virtually no step difference between the first region 21 and the second region 22), as shown in Figure 4. Moreover, the additional material 40, which includes at least one of an insulating material and a semiconductor material, is not substantially damaged by the composition 30.

[0135] Manufacturing method of electronic components High-quality electronic devices can be fabricated using the compositions described above. Therefore, a method for manufacturing electronic devices using the compositions can be provided.

[0136] According to one embodiment, A method for manufacturing an electronic device including a transistor, The aforementioned transistor is Channels and The channel is electrically connected to a source and a drain, which are arranged at a distance from each other. Terminal gate and, A gate insulating film disposed between the gate electrode and the channel, Includes, The method for manufacturing the aforementioned electronic element is as follows: A step of providing a barrier layer comprising a metal nitride, a metal oxynitride, or a combination thereof, The steps include providing a conductive layer containing a conductive metal, The steps include bringing the barrier layer and the conductive layer into contact with the composition, and etching a part of the barrier layer and a part of the conductive layer to form a gate electrode, A method for manufacturing electronic elements is provided.

[0137] According to one embodiment, the method for manufacturing the electronic element includes a gate electrode formation step, the gate electrode formation step may include a step of providing a barrier layer containing the metal nitride, metal oxynitride, or a combination thereof, a step of providing a conductive layer containing the conductive metal, and a step of bringing the barrier layer and the conductive layer into contact with the composition and etching a part of the barrier layer and a part of the conductive layer to form a gate electrode.

[0138] The channel may include, for example, the semiconductor materials described herein. For example, the channel may include Group IV semiconductor materials such as silicon, germanium (Ge), silicon germanium (SiGe), and silicon carbide (SiC); Group III-V semiconductor materials such as gallium arsenide (GaAs), indium arsenide (InAs), and indium phosphide (InP); oxide semiconductors, nitride semiconductors, and oxynitride semiconductors. The oxide semiconductor may include, for example, IGZO (Indium Gallium Zinc Oxide), ITZO (Indium Tin Zinc Oxide), ITGO (Indium Tin Gallium Oxide), IWO (Indium Tungsten Oxide), ITO (Indium Tin Oxide), ZnO, Cu2O, or any combination thereof.

[0139] The gate insulating film may include an insulating material capable of electrically insulating the gate electrode from the channel. For example, the gate insulating film may include various oxides, nitrides, oxynitrides, high dielectric materials, or combinations thereof. For example, the gate insulating film may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, hafnium oxynitride, zirconium oxide, or combinations thereof. The hafnium oxide and hafnium oxynitride may further optionally include Si, Ta, Ti, Zr, or any combination thereof.

[0140] The gate electrode may include a barrier layer and a conductive layer. The barrier layer may be disposed, for example, between the gate insulating film and the conductive layer.

[0141] To provide the aforementioned gate electrode, a barrier layer and a conductive layer can be provided. For example, a conductive layer can be provided on the surface of the barrier layer after the barrier layer has been formed, but various modifications are possible, such as forming the barrier layer on the surface of the conductive layer after the conductive layer has been formed, depending on the structure of the channel and / or gate electrode.

[0142] The barrier layer may be provided to prevent peripheral diffusion of conductive metals (e.g., metal ions) contained in the conductive layer and / or to facilitate the smooth deposition of the conductive layer.

[0143] For a detailed description of each of the metal nitrides and / or metal oxynitrides contained in the barrier layer, refer to the descriptions of each of the metal nitrides and / or metal oxynitrides contained in the first region of the metal-containing film as provided herein.

[0144] According to one embodiment, the barrier layer comprises a titanium nitride, a titan oxynitride, or a combination thereof, wherein each of the titanium nitride and titan oxynitride may further optionally comprise indium (In), aluminum (Al), lanthanum (La), scandium (Sc), gallium (Ga), silicon (Si), or any combination thereof.

[0145] A detailed explanation of the conductive metal contained in the conductive layer can be found in the explanation of the conductive metal contained in the second region of the metal-containing film as described herein.

[0146] According to one embodiment, the conductive layer may include tungsten (W), molybdenum (Mo), ruthenium (Ru), or any combination thereof.

[0147] Next, the barrier layer and the conductive layer may be brought into contact with a composition as described herein, and a portion of the barrier layer and a portion of the conductive layer may be etched to form a gate electrode.

[0148] When the barrier layer and conductive layer come into contact with a composition as described herein, the interaction of the oxidizing agent, acid, and etching modifier contained in the composition controls the high reactivity of the conductive metal contained in the conductive layer. This allows for appropriate control of the etching rate of the conductive layer, while a portion of the barrier layer and a portion of the conductive layer are etched, thereby forming a gate electrode with a substantially flat surface (for example, with virtually no step between the barrier layer and the conductive layer). Moreover, at least one of the channels and gate insulating films located adjacent to the gate electrode is substantially undamaged by the composition, and a high-quality electronic device including a gate electrode with a precise pattern can be fabricated without damaging the region adjacent to the gate electrode.

[0149] The aforementioned electronic element is also a semiconductor memory element.

[0150] For example, the electronic elements may include volatile memory elements such as DRAM (Dynamic Random Access Memory) elements or SRAM (static random access memory) elements, resistive random access memory (ReRAM) elements, electrically erasable programmable read-only memory (EEPROM) elements, flash memory (which can also be considered a subset of EEPROM) elements, ferroelectric random access memory (FRAM®) elements and magnetoresistive random access memory (MRAM) elements, and non-volatile memory elements such as other semiconductor elements capable of storing information.

[0151] According to one embodiment, the electronic element is also a DRAM element.

[0152] The manufacturing method of the electronic element will be described in more detail below with reference to Figures 5, 6A, 6B, 7, 8, and 9.

[0153] Figure 5 is a schematic plan view of an electronic element 3000 according to an exemplary embodiment, and Figure 6 is a perspective view of the electronic element 3000 shown in Figure 5. The electronic element 3000 in Figure 5 is also a DRAM element.

[0154] Referring to Figures 5, 6A, and 6B, the electronic element 3000 includes a plurality of unit elements 3100 arranged in an array. Here, each unit element 3100 has a 1T1C structure consisting of one transistor and one capacitor.

[0155] The electronic element 3000 includes a transistor structure 100 and a plurality of capacitors 3500 provided to the transistor structure 100. The transistor structure 100 may also be a vertical channel array transistor structure (see Figure 6A) including channels arranged perpendicular to the substrate, or a channel array transistor structure (see Figure 6B) including channels arranged and stacked horizontally to the substrate.

[0156] In the transistor structure 100, multiple gate electrodes (or word lines 150 and multiple bit lines 160) are provided so as to intersect each other. Each gate electrode 150 extends in a first direction (e.g., the x-axis direction), and each bit line 160 may extend in a second direction (e.g., the y-axis direction) intersecting the first direction. A transistor is positioned at the point where the multiple gate electrodes 150 and the multiple bit lines 160 intersect.

[0157] Figures 7 to 9 are diagrams that briefly illustrate part of the manufacturing process of the transistor structure 100 shown in Figure 6A.

[0158] The transistor structure 100 in Figure 7 includes a substrate 110 and a plurality of channels 140 arranged in an array on the substrate 110. Here, the plurality of channels 140 may be arranged in a two-dimensional array on the plane of the substrate 110 (for example, the xy-plane).

[0159] The substrate 110 may, for example, contain silicon (Si). Specifically, the substrate 110 may consist of a silicon substrate doped with N-type impurities. However, this is merely illustrative, and the substrate 110 may also contain, for example, Group IV semiconductor materials such as germanium (Ge), silicon germanium (SiGe), and silicon carbide (SiC), Group III-V semiconductor materials such as gallium arsenide (GaAs), indium arsenide (InAs), and indium phosphide (InP), oxide semiconductors, nitride semiconductors, and oxynitride semiconductors.

[0160] Each of the multiple channels 140 may be provided extending vertically from the substrate 110. Here, each channel 140 may be provided projecting vertically from the upper surface of the substrate 110. Each channel 140 may contain the same semiconductor material as the semiconductor substrate 110 by being formed integrally with the substrate 110. In Figure 7, the channels 140 are formed integrally with the substrate 110, but various modifications are possible, such as the channels 140 being formed separately from the substrate 110.

[0161] A source (S) and a drain (D) are provided at the bottom and top of each channel 140, respectively. The source (S) is provided to be electrically connected to the bottom of channel 140, and the drain (D) is provided to be connected to the top of channel 140. For example, the source (S) and drain (D) may be formed through doping region formation. The capacitor 3500 shown in Figure 5 may be connected to the drain (D) located at the top of channel 140. On the upper surface of the substrate 110, sources (S) are provided in an array corresponding to the channels 140. Below these sources (S), a plurality of bit lines 160 extend along a second direction (e.g., the y-axis direction). Here, each bit line 160 can electrically connect the sources (S) arranged along the second direction. The plurality of bit lines 160 are formed inside the substrate 110 and may contain the same semiconductor material as the substrate 110. The bit lines 160 in Figure 7 can be formed separately using a material other than the substrate 110, and various modifications are possible. Multiple insulating materials 170 may be provided in the substrate 110 between the multiple bit lines 160. The multiple insulating materials 170 can separate the multiple bit lines 160 into the interior of the substrate 110 by extending along a second direction aligned with the multiple bit lines 160. These insulating materials 170 may include, for example, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, hafnium oxynitride, zirconium oxide, or combinations thereof. A gate insulating film 130 is provided on the surface of the channel 140. The gate insulating film 130 may include insulating materials as described herein, such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, hafnium oxynitride, zirconium oxide, or combinations thereof. As described above, in the substrate 110 provided with the channel 140 and gate insulating film 130, a barrier layer 151 containing a metal nitride, metal oxynitride, or a combination thereof and a conductive layer 152 containing a conductive metal are provided within the trench defined by the gate insulating film 130, as shown in Figure 7. For example, the conductive layer 152 can be provided on the surface of the barrier layer 151 after the barrier layer 151 has been formed, but various modifications are possible, such as forming the barrier layer 151 on the surface of the conductive layer 152 after the conductive layer 152 has been formed, depending on the structure of the channel 140 and / or gate electrode 150. For explanations of the metal nitride and / or metal oxynitride contained in the barrier layer 151 and the conductive metal contained in the conductive layer 152, please refer to the provisions herein. Next, as shown in Figure 7, an embedded insulating layer 180 is provided within the trench defined in part or more by the conductive layer 152. The embedded insulating layer 180 serves to protect the gate electrode 150 in Figure 8 from penetration by oxygen and other elements. After the formation of the embedded insulating layer 180, a planarization process may be further performed as needed to expose the upper surfaces of the barrier layer 151 and the conductive layer 152. Next, the exposed upper surfaces of the barrier layer 151 and the conductive layer 152 are brought into contact with composition 30, and a portion of the barrier layer 151 and a portion of the conductive layer 152 are etched to form a gate electrode 150 having a pattern as shown in Figure 8. In Figure 7, composition 30 includes an oxidizing agent, an acid, and an etching modifier as described herein, for a detailed description thereof, refer to the foregoing. The etching rate ratio obtained by dividing the first etching rate at which composition 30 etches the barrier layer 151 by the second etching rate at which composition 30 etches the conductive layer 152 is 0.04 or higher. For example, the etching rate ratio obtained by dividing the first etching rate at which composition 30 etches the barrier layer 151 by the second etching rate at which composition 30 etches the conductive layer 152 is 0.05 or more, 0.06 or more, 0.04 to 1.0, 0.05 to 1.0, 0.06 to 1.0, 0.04 to 0.5, 0.05 to 0.5, 0.06 to 0.5, 0.04 to 0.3, 0.05 to 0.3, 0.06 to 0.3, 0.04 to 0.2, 0.05 to 0.2, 0.06 to 0.2, 0.04 to 0.15, 0.05 to 0.15, 0.06 to 0.15, or 0.06 to 0.13. On the other hand, the etching area ratio obtained by dividing the first area of ​​the barrier layer 151 exposed for contact with composition 30 by the second area of ​​the conductive layer 152 exposed for contact with composition 30 is also 0.05~1.0, 0.05~0.9, 0.05~0.7, 0.05~0.5, 0.05~0.4, 0.05~0.3, or 0.05~0.2. When the barrier layer 151 and the conductive layer 152 come into contact with the composition 30, the interaction of the oxidizing agent, acid, and etching modifier contained in the composition 30 controls the high reactivity of the conductive metal contained in the conductive layer 152. This appropriately controls the etching rate of the conductive layer 152, while etching a portion of the barrier layer 151 and a portion of the conductive layer 152, thereby forming a gate electrode 150 having a substantially flat upper surface (for example, with virtually no step difference between the barrier layer 151 and the conductive layer 152), as shown in Figure 8. Moreover, the channel 140, gate insulating film 130, and embedded insulating layer 180, which are located adjacent to the gate electrode 150, are not substantially damaged by the composition 30. This makes it possible to fabricate a high-quality electronic device 3000, including a gate electrode 150 with a precise pattern, without damaging the regions adjacent to the gate electrode 150, such as the channel 140, gate insulating film 130, and embedded insulating layer 180. In Figure 8, the multiple gate electrodes 150 on the substrate 110 may be arranged to extend along a first direction (for example, the x-axis direction). The first direction may intersect with the second direction described above. For example, the first direction may be perpendicular to the second direction. However, it is not necessarily limited to these. Each gate electrode 150 is provided to correspond to channels 140 arranged along a first direction. Specifically, each gate electrode 150 may be provided to surround channels 140 arranged along a first direction. Such gate electrodes 150 serve as word lines. Multiple gate electrodes 150 may be provided such that multiple insulating materials 170 provided below them intersect. The upper surface of the insulating material 170 may be provided adjacent to the lower surface of the gate electrode 150. Here, the upper part of the insulating material 170 may, but is not limited to, be provided so as to protrude from the bottom of the gate electrode 150. Next, as shown in Figure 9, an insulating layer 190 may be further provided on the surface of the etched barrier layer 151 and the surface of the etched conductive layer 152. The insulating layer 190 serves to further insulate the gate electrode 150 from the channel 140 and may include, for example, an insulating material as described herein. Electronic device manufacturing method Referring to Figure 10, one embodiment of an electronic device manufacturing method may include the steps of: preparing a substrate provided with a metal-containing film (S100); contacting the metal-containing film with a composition as described herein (S110); and fabricating an electronic device using subsequent steps 120. The subsequent steps may include a variety of known steps for fabricating an electronic device, such as a capacitor formation step.

[0162] Examples 1-4, Comparative Example C1 and Comparative Example C2 The substances weighed according to the content listed in Table 1 were mixed to prepare the compositions of Examples 1-4, Comparative Example C1, and Comparative Example C2, respectively. The remainder of each composition is water (deionized water). The number average molecular weight (M) of polymer P1 is... nThe ratio is 432, and the content of polymer P1 listed in Table 1 refers to the solid content of polymer P1. The compositions of Examples 1-3 and Comparative Example C2 contain one compound as an etching modifier, the composition of Example 4 contains two compounds as etching modifiers, the composition of Comparative Example C1 does not contain an etching modifier, and the composition of Comparative Example C2 does not contain an oxidizing agent.

[0163] Evaluation Example 1 The composition of Example 1 was placed in three separate beakers and heated to 60°C. Then, 1cm x 1cm specimens of titanium nitride-containing film, molybdenum film, and silicon oxide film were immersed in each beaker for 1 minute. The thicknesses of the titanium nitride-containing film, molybdenum film, and silicon oxide film were measured using an ellipsometer (M-2000, JAWoolam), a four-point resistance meter, and XRF (X-Ray Fluorescence Spectroscopy). The etching rates of the titanium nitride-containing film (also called the "titanium nitride-containing film etching rate"), the molybdenum film (also called the "molybdenum film etching rate"), and the silicon oxide film (also called the "silicon oxide film etching rate") were measured. The unit of each measured etching rate is "Å / min". Next, the etching rate of the molybdenum film, "A," was divided by the etching rate of the titanium nitride-containing film, "B," to evaluate the ratio of the molybdenum film etching rate to the titanium nitride-containing film etching rate, "A / B."

[0164] The above tests were repeated using the compositions of Examples 2-4, Comparative Example C1, and Comparative Example C2. The molybdenum film etching rates of each composition of Examples 1-4 and Comparative Example C2 were summarized in Table 1 as relative values ​​(%) to the molybdenum film etching rate of the composition of Comparative Example C1. The A / B ratios of each composition of Examples 1-4 and Comparative Example C2 were also summarized in Table 1 as relative values ​​(%) to the A / B ratio of the composition of Comparative Example C1. The pH of each composition of Examples 1-4, Comparative Example C1, and Comparative Example C2, as evaluated with a pH meter, are also summarized in Table 1.

[0165] [Table 1]

[0166] Table 1 shows that when a molybdenum film and a titanium nitride-containing film are etched simultaneously, i) the composition of Comparative Example C1, which does not contain an etching modifier, excessively etches the molybdenum film compared to the compositions of Examples 1 to 4, and ii) the composition of Comparative Example C2, which does not contain an oxidizing agent, does not etch the molybdenum film. On the other hand, the compositions of Examples 1 to 4 can etch both the titanium nitride-containing film and the molybdenum film simultaneously with an appropriate etching ratio without substantially damaging the silicon oxide film, and can be usefully used for uniform etching of metal-containing films with diverse compositions.

[0167] Example 5 and Comparative Example C3 The compositions of Example 5 and Comparative Example C3 were prepared by mixing substances weighed according to the content listed in Table 2 as an oxidizing agent, acid, and etching modifier. The compositions of Example 5 and Comparative Example C3 contain two compounds as acids.

[0168] Evaluation Example 2 For the compositions of Example 5 and Comparative Example C3, the pH and the molybdenum film etching rate were evaluated by the method described in Evaluation Example 1, and the results are summarized in Table 2. In Table 2, the molybdenum film etching rate of the composition of Example 5 was summarized as the relative value (%) with respect to the molybdenum film etching rate of the composition of Comparative Example C3.

[0169]

Table 2

[0170] From Table 2, it can be confirmed that the composition of Comparative Example C3 without an etching regulator excessively etches the molybdenum film, while the composition of Example 5 does not excessively etch the molybdenum film without substantially damaging the silicon oxide film, and can simultaneously etch both the titanium nitride-containing film and the molybdenum film at an appropriate etching ratio, and can be usefully used for uniform etching of metal-containing films having various compositions.

Explanation of Reference Numerals

[0171] 100 Vertical channel array transistor structure 110 Semiconductor substrate 130 Gate insulating film 140 Channel 150 Word line 160 Bit line 170 Insulating material 3000 DRAM element 3100 Unit element 3500 Capacitor S Source D Drain

Claims

1. A step of preparing a substrate provided with a metal-containing film including a first region and a second region, The step includes bringing the metal-containing film into contact with the composition, The first and second regions independently contain titanium (Ti), indium (In), aluminum (Al), lanthanum (La), scandium (Sc), gallium (Ga), tungsten (W), molybdenum (Mo), ruthenium (Ru), zinc (Zn), hafnium (Hf), cobalt (Co), copper (Cu), or any combination thereof. The substances contained in the first region and the substances contained in the second region are different from each other. The composition comprises an oxidizing agent, an acid, and an etching controller. The etching modifier comprises at least one of a compound represented by the following chemical formula 1 and a polymer containing repeating units represented by the following chemical formula 2, for the treatment of a metal-containing film: 【Chemistry 1】 【Chemistry 2】 In the aforementioned chemical formulas 1 and 2, R １ and R ２ They are independent of each other, Hydrogen, halogen atom, *-OH, *-SH, or *-C(=O)OH; A halogen atom, *-OH, *-SH, *-C(=O)OH, C １ -C ３０ an alkyl group, C ２ -C ３０ an alkenyl group, C １ -C ３０ an alkoxy group, C １ -C ３０ an alkylthio group, or a C substituted or unsubstituted with any combination thereof １ -C ３０ an alkyl group, C ２ -C ３０ an alkenyl group, C １ -C ３０ an alkoxy group, C １ -C ３０ an alkylthio group, C ３ -C ３０ a carbocyclic group, or C １ -C ３０ a heterocyclic group; or *-N(R １３ ) (Caution １４ ); and R １１ ~R １４ They are independent of each other, Hydrogen, halogen atom, *-OH, *-SH, or *-C(=O)OH; or Halogen atom, *-OH, *-SH, *-C(=O)OH, C １ -C ３０ alkyl group, C ２ -C ３０ Alkenyl group, C １ -C ３０ Alkoxy group, C １ -C ３０ A C that is substituted or unsubstituted with an alkylthio group, or any combination thereof. １ -C ３０ alkyl group, C ２ -C ３０ Alkenyl group, C １ -C ３０ Alkoxy group, C １ -C ３０ Alkylthio group, C ３ -C ３０ Carbon ring group, or C １ -C ３０ Heterocyclic group; L １ ~L ３ They are independent of each other, A single bond, O, or S; or Halogen atom, *-OH, *-SH, *-C(=O)OH, C １ -C ３０ alkyl group, C ２ -C ３０ Alkenyl group, C １ -C ３０ Alkoxy group, C １ -C ３０ A C that is substituted or unsubstituted with an alkylthio group, or any combination thereof. １ -C ３０ Alkylene group, C ２ -C ３０ Alkenylene group, C ３ -C ３０ Carbon ring group, or C １ -C ３０ Heterocyclic group; a1 to a3 are mutually independent integers between 1 and 30. * and *' are bonding sites with adjacent atoms.

2. The first region includes titanium (Ti), indium (In), aluminum (Al), lanthanum (La), scandium (Sc), gallium (Ga), or any combination thereof. The method for treating a metal-containing film according to claim 1, wherein the second region includes tungsten (W), molybdenum (Mo), ruthenium (Ru), or any combination thereof.

3. The method for treating a metal-containing film according to claim 1, wherein the first region includes a metal nitride, a metal oxynitride, or a combination thereof, and the second region includes a conductive metal.

4. The first region includes titanium nitride, titan oxynitride, or a combination thereof. The method for treating a metal-containing film according to claim 1, wherein each of the titanium nitride and titan oxynitride further selectively comprises indium (In), aluminum (Al), lanthanum (La), scandium (Sc), gallium (Ga), silicon (Si), or any combination thereof.

5. A method for treating a metal-containing film according to claim 1, wherein the etching area ratio obtained by dividing the first area exposed for contact with the composition in the first region by the second area exposed for contact with the composition in the second region is 0.05 to 1.

0.

6. i) Whether the acid contains an inorganic acid, ii) The acid contains an organic acid, or iii) The acid includes inorganic acids and organic acids, The inorganic acid includes phosphoric acid, The method for treating a metal-containing film according to claim 1, wherein the organic acid includes a carboxylic acid.

7. The compound represented by the aforementioned chemical formula 1 is the compound represented by the following chemical formula 1A, The method for treating a metal-containing film according to claim 1, wherein the repeating unit represented by chemical formula 2 is the repeating unit represented by the following chemical formula 2A: 【Transformation 3】 In the aforementioned chemical formulas 1A and 2A, R １１ ~R １４ The explanations relating to each of these are the same as those described in claim 1. R １５ and R １６ The explanation for each of these is as stated in Claim 1, R １３ This is similar to the explanation regarding the above, R ２１ ~R ２４ These are, independently of each other, hydrogen, halogen atom, *-OH, *-SH, *-C(=O)OH, and C １ -C ３０ alkyl group, C ２ -C ３０ Alkenyl group, C １ -C ３０ Alkoxy group, or C １ -C ３０ It is an alkylthio group, * and *' are bonding sites with adjacent atoms.

8. The method for treating a metal-containing film according to claim 1, wherein the content of the etching modifier is 0.01 wt% to 5 wt% per 100 wt% of the composition.

9. A method for manufacturing an electronic device including a transistor, The aforementioned transistor is Channels and The channel is electrically connected to a source and a drain, which are arranged at a distance from each other. Terminal gate and, The gate insulating film is disposed between the gate electrode and the channel, The method for manufacturing the aforementioned electronic element is as follows: A step of providing a barrier layer comprising a metal nitride, a metal oxynitride, or a combination thereof, The steps include providing a conductive layer containing a conductive metal, The steps include bringing the barrier layer and the conductive layer into contact with the composition, etching a portion of the barrier layer and a portion of the conductive layer to form a gate electrode, Includes, The composition comprises an oxidizing agent, an acid, and an etching controller. The etching modifier comprises at least one of a compound represented by the following chemical formula 1 and a polymer containing repeating units represented by the following chemical formula 2, for the purpose of manufacturing an electronic device: 【Chemistry 4】 【Transformation 5】 In the aforementioned chemical formulas 1 and 2, R １ and R ２ They are independent of each other, Hydrogen, halogen atom, *-OH, *-SH, or *-C(=O)OH; A halogen atom, *-OH, *-SH, *-C(=O)OH, C １ -C ３０ An alkyl group, C ２ -C ３０ An alkenyl group, C １ -C ３０ An alkoxy group, C １ -C ３０ An alkylthio group, or a C substituted or unsubstituted with any combination thereof １ -C ３０ An alkyl group, C ２ -C ３０ An alkenyl group, C １ -C ３０ An alkoxy group, C １ -C ３０ An alkylthio group, C ３ -C ３０ A carbocyclic group, or C １ -C ３０ A heterocyclic group; or *-N(R １３ ) (Caution １４ ); and R １１ ~R １４ They are independent of each other, Hydrogen, halogen atom, *-OH, *-SH, or *-C(=O)OH; or Halogen atom, *-OH, *-SH, *-C(=O)OH, C １ -C ３０ alkyl group, C ２ -C ３０ Alkenyl group, C １ -C ３０ Alkoxy group, C １ -C ３０ A C that is substituted or unsubstituted with an alkylthio group, or any combination thereof. １ -C ３０ alkyl group, C ２ -C ３０ Alkenyl group, C １ -C ３０ Alkoxy group, C １ -C ３０ Alkylthio group, C ３ -C ３０ Carbon ring group, or C １ -C ３０ Heterocyclic group; L １ ~L ３ They are independent of each other, A single bond, O, or S; or Halogen atom, *-OH, *-SH, *-C(=O)OH, C １ -C ３０ alkyl group, C ２ -C ３０ Alkenyl group, C １ -C ３０ Alkoxy group, C １ -C ３０ A C that is substituted or unsubstituted with an alkylthio group, or any combination thereof. １ -C ３０ Alkylene group, C ２ -C ３０ Alkenylene group, C ３ -C ３０ Carbon ring group, or C １ -C ３０ Heterocyclic group; a1 to a3 are mutually independent integers between 1 and 30. * and *' are bonding sites with adjacent atoms.

10. The barrier layer comprises titanium nitride, titan oxynitride, or a combination thereof. Each of the aforementioned titanium nitrides and titan oxynitrides further selectively comprises indium (In), aluminum (Al), lanthanum (La), scandium (Sc), gallium (Ga), silicon (Si), or any combination thereof. The method for manufacturing an electronic element according to claim 9, wherein the conductive layer comprises tungsten (W), molybdenum (Mo), ruthenium (Ru), or any combination thereof.

11. The method for manufacturing an electronic element according to claim 9, further comprising the steps of bringing the barrier layer and the conductive layer into contact with the composition, etching a portion of the barrier layer and a portion of the conductive layer to form a gate electrode, and then providing an insulating layer to the surface of the etched barrier layer and the surface of the etched conductive layer.

12. It comprises an oxidizing agent, an acid, and an etching controller. The etching modifier is a composition comprising at least one of a compound represented by the following chemical formula 1 and a polymer containing repeating units represented by the following chemical formula 2: 【Transformation 6】 【Transformation 7】 In the aforementioned chemical formulas 1 and 2, R １ and R ２ They are independent of each other, Hydrogen, halogen atom, *-OH, *-SH, or *-C(=O)OH; Halogen atom, *-OH, *-SH, *-C(=O)OH, C １ -C ３０ alkyl group, C ２ -C ３０ Alkenyl group, C １ -C ３０ Alkoxy group, C １ -C ３０ A C that is substituted or unsubstituted with an alkylthio group, or any combination thereof. １ -C ３０ alkyl group, C ２ -C ３０ Alkenyl group, C １ -C ３０ Alkoxy group, C １ -C ３０ Alkylthio group, C ３ -C ３０ Carbon ring group, or C １ -C ３０ Heterocyclic group; or *-N(R １３ ) (Caution １４ ); and R １１ ~R １４ They are independent of each other, Hydrogen, halogen atom, *-OH, *-SH, or *-C(=O)OH; or Halogen atom, *-OH, *-SH, *-C(=O)OH, C １ -C ３０ alkyl group, C ２ -C ３０ Alkenyl group, C １ -C ３０ Alkoxy group, C １ -C ３０ A C that is substituted or unsubstituted with an alkylthio group, or any combination thereof. １ -C ３０ alkyl group, C ２ -C ３０ Alkenyl group, C １ -C ３０ Alkoxy group, C １ -C ３０ Alkylthio group, C ３ -C ３０ Carbon ring group, or C １ -C ３０ Heterocyclic group; L １ ~L ３ They are independent of each other, A single bond, O, or S; or Halogen atom, *-OH, *-SH, *-C(=O)OH, C １ -C ３０ alkyl group, C ２ -C ３０ Alkenyl group, C １ -C ３０ Alkoxy group, C １ -C ３０ A C that is substituted or unsubstituted with an alkylthio group, or any combination thereof. １ -C ３０ Alkylene group, C ２ -C ３０ Alkenylene group, C ３ -C ３０ Carbon ring group, or C １ -C ３０ Heterocyclic group; a1 to a3 are mutually independent integers between 1 and 30. * and *' are bonding sites with adjacent atoms.

13. The composition according to claim 12, wherein the oxidizing agent comprises hydrogen peroxide.

14. The composition according to claim 12, wherein the content of the oxidizing agent is 0.001 wt% to 10 wt% per 100 wt% of the composition.

15. i) Whether the acid contains an inorganic acid, ii) The acid contains an organic acid, or iii) The acid includes inorganic acids and organic acids, The inorganic acid includes phosphoric acid, The composition according to claim 12, wherein the organic acid comprises a carboxylic acid.

16. The composition according to claim 12, wherein the content of the acid is 10 wt% to 90 wt% per 100 wt% of the composition.

17. In the above chemical formulas 1 and 2, R １ and R ２ They are independent of each other, *-OH, *-SH, or *-C(=O)OH; *-OH, *-SH, *-C(=O)OH, C １ -C １０ alkyl group, C １ -C １０ Alkoxy group, C １ -C １０ A C that is substituted or unsubstituted with an alkylthio group, or any combination thereof. １ -C １０ alkyl group, C １ -C １０ Alkoxy group, or C １ -C １０ Alkylthio group; or *-N(R １３ ) (Caution １４ ); and In the above chemical formulas 1 and 2, R １１ ~R １４ They are independent of each other, Hydrogen, *-OH, *-SH, or *-C(=O)OH; or *-OH, *-SH, *-C(=O)OH, C １ -C １０ alkyl group, C １ -C １０ Alkoxy group, C １ -C １０ A C that is substituted or unsubstituted with an alkylthio group, or any combination thereof. １ -C １０ alkyl group, C １ -C １０ Alkoxy group, or C １ -C ３０ The composition according to claim 12, wherein the alkylthio group is:

18. In the above chemical formula 2, L １ ~L ３ They are independent of each other, O or S; or *-OH, *-SH, *-C(=O)OH, C １ -C １０ alkyl group, C １ -C １０ Alkoxy group, C １ -C １０ A C atom substituted or unsubstituted with an alkylthio group, or any combination thereof. １ -C １０ Alkylene group; The composition according to claim 12, wherein a1 to a3 are integers from 1 to 5, independently of each other.

19. The compound represented by the aforementioned chemical formula 1 is the compound represented by the following chemical formula 1A, The composition according to claim 12, wherein the repeating unit represented by chemical formula 2 is the repeating unit represented by the following chemical formula 2A: 【Transformation 8】 In the aforementioned chemical formulas 1A and 2A, R １１ ~R １４ The explanations relating to each of these are the same as those described in claim 12. R １５ and R １６ The explanation relating to each of these is as stated in claim 12 R １３ This is similar to the explanation regarding the above, R ２１ ~R ２４ These are, independently of each other, hydrogen, halogen atom, *-OH, *-SH, *-C(=O)OH, and C １ -C ３０ alkyl group, C ２ -C ３０ Alkenyl group, C １ -C ３０ Alkoxy group, or C １ -C ３０ It is an alkylthio group, * and *' are bonding sites with adjacent atoms.

20. The composition according to claim 12, wherein the content of the etching modifier is 0.01 wt% to 5 wt% per 100 wt% of the composition.

Images