Indication device
By optimizing the structure and material composition of thin-film transistors and combining high-temperature short-time processing to form nanocrystalline regions, the problem of thin-film transistors being unable to simultaneously meet the requirements of high switching ratio and high operating speed in high-resolution display devices has been solved. This has resulted in thin-film transistors with high conductivity, reliability, and anti-static capability, making them suitable for display devices.
JP2026116310APending Publication Date: 2026-07-09SEMICON ENERGY LAB CO LTD
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- SEMICON ENERGY LAB CO LTD
- Filing Date
- 2026-04-16
- Publication Date
- 2026-07-09
Smart Images
Figure 2026116310000001_ABST
Abstract
Thin-film transistors with good electrical characteristics and high reliability, and said thin-film transistors The objective is to provide a display device that uses a switching element. [Solution] A channel-protected thin-film transistor using an oxide semiconductor in the channel formation region. The active layer is an oxide semiconductor layer that has been dehydrated or dehydrogenated by heat treatment. The surface of the channel-forming region has a crystalline region composed of nanocrystals, and other The portion is formed of amorphous material, or a mixture of amorphous and microcrystalline material in which microcrystals are scattered within amorphous regions. It is constructed in such a way that by using an oxide semiconductor layer, moisture from the surface layer can be absorbed. Suppression of N-type conversion and parasitic channel generation due to re-entry and oxygen desorption, and source electrode and slave This can reduce the contact resistance with the electrode.
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