Light-emitting device

Abstract

To provide a highly reliable light-emitting device. When an external physical force is applied, the element To prevent the flexible base from being destroyed. Or, in the process of crimping the FPC, This prevents heat damage to the resin and wiring that come into contact with the board. [Solution] In a flexible light-emitting device including an organic EL element, stress strain in response to deformation The configuration is such that a neutral plane where no light generation occurs is located near both the transistor and the organic EL element. Alternatively, the outermost surface of the light-emitting device may be made hard. Alternatively, the terminal that connects to the FPC may be made hard. A substrate with a thermal expansion coefficient of 10 ppm / K or less is used for the substrate that overlaps with the sub-part.

Description

[Technical Field]

[0001] Organic electroluminescence (EL) This relates to light-emitting devices, electronic devices, and lighting devices that utilize the phenomenon (also described). [Background technology]

[0002] In recent years, research and development of light-emitting elements (organic EL devices) using organic EL has been actively pursued. The basic structure of an organic EL element is a layer containing a light-emitting organic compound (EL layer) between a pair of electrodes. It is sandwiched between two things.

[0003] Because organic EL elements are self-emissive, light-emitting devices using organic EL elements offer excellent visibility. It has advantages such as not requiring a backlight and consuming less power. Furthermore, it is thin and light. It also has advantages such as being able to respond quickly to input signals.

[0004] Furthermore, light-emitting devices using organic EL elements offer not only thinness and lightness, but also flexibility. Because it can provide impact resistance, its use in flexible substrates is being considered. Furthermore, its use in flexible substrates is not limited to light-emitting devices, but also enhances semiconductor properties. It is also applied to semiconductor devices and other equipment that operate by utilizing this technology.

[0005] For example, Patent Document 1 describes a film substrate on which a switching element such as a transistor or organic A flexible active-matrix light-emitting device equipped with an EL element is disclosed.

[0006] Furthermore, Patent Document 2 describes an organic EL element being supported on a resin substrate made of a flexible film. An organic EL display panel, an inorganic barrier film covering the surface of the resin substrate, and the organic EL display An organic EL display device is disclosed, comprising a resin encapsulation film surrounding a display panel.

[0007] Furthermore, methods for fabricating semiconductor devices using flexible substrates include glass substrates and quartz substrates. After fabricating semiconductor elements such as thin-film transistors on such substrates, the substrate is then used to fabricate other substrates. A technique has been developed to transfer the semiconductor element onto a flexible substrate (for example). In order to transfer a semiconductor element to another substrate, the semiconductor element must be transferred from the substrate used to fabricate the semiconductor element. A process to separate the elements is necessary.

[0008] For example, Patent Document 3 describes a peeling technique using laser ablation as follows: First, a separation layer made of amorphous silicon or the like is placed on the substrate, and a thin film element is placed on the separation layer. A peelable layer containing the material is provided, and the peelable layer is adhered to the transfer body by an adhesive layer. Then, By irradiating the separation layer with light, delamination occurs in the separation layer. ru.

[0009] Furthermore, Patent Document 1 describes a technique for peeling using physical force such as human hands. In Document 1, a metal layer is formed between the substrate and the oxide layer, and the interface between the oxide layer and the metal layer is By taking advantage of the weak bond, delamination occurs at the interface between the oxide layer and the metal layer, causing the peeling to occur. The layer and the substrate are separated. [Prior art documents] [Patent Documents]

[0010] [Patent Document 1] Japanese Patent Publication No. 2003-174153 [Patent Document 2] International Publication No. 2006 / 046679 Pamphlet

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0011] However, in a light-emitting device using a flexible substrate, when physical forces such as bending and curving are applied from the outside, stress is applied to the transistors and organic EL elements, and these elements may be damaged. When either the transistor or the organic EL element is damaged, problems occur in the display of the light-emitting device. Therefore, an object of one aspect of the present invention is to provide a highly reliable light-emitting device that suppresses the destruction of transistors or organic EL elements when physical forces are applied from the outside.

[0012]

[0013] In addition, in the configuration described in Patent Document 2, when mechanical pressure is locally applied from the surface of the resin-sealing film, the organic EL element may be damaged.

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[0036] [[ID=K1]] [[ID=K2]] [[ID=K3]]

[0037] [[ID=K4]] [[ID=K5]] [[ID=K6]] [[ID=K7]] [[ID=K8]]

[0038] [[ID=K9]] [[ID=K10]] [[ID=K11]] [[ID=K12]]

[0039] [[ID=K13]] [[ID=K14]] [[ID=K15]] [[ID=K16]] [[ID=K17]] [[ID=K18]] [[ID=K19]] [[ID=K20]]

[0040] [[ID=K21]] [[ID=K22]] [[ID=K23]] [[ID=K24]]<00One of the objectives is to provide the device.

[0017] Furthermore, in the mounting of a light-emitting device formed on a flexible substrate, an anisotropic conductive film is used. Then, the connector (FPC: Flexible printed circuit), etc., is heat-pressed. The flexible base is attached to the terminal electrode by heat compression to establish conductivity. The plate itself, or the resin or wiring provided on the substrate, is damaged by heat, resulting in the light-emitting device Display malfunctions may occur. Because the flexible circuit board is flexible, heating changes may occur. This is because cracks can form in the resin and wiring depending on the shape.

[0018] Therefore, in one aspect of the present invention, the FPC is crimped without cracking in the wiring. One of the objectives is to provide a light-emitting device that can be attached and made electrically connected to terminal electrodes. ru. [Means for solving the problem]

[0019] A light-emitting device according to one aspect of the present invention has a planarization layer between a pair of flexible substrates, and one of the planarization layers A transistor provided on one side of the planarized layer, and an organic EL element provided in contact with the other side of the planarized layer. , and an adhesive layer for bonding a pair of flexible substrates. In one embodiment of the present invention, the light-emitting device is The thickness from one side of the optical device to the other side of the planarization layer (the thickness on the side containing the transistor). And, each Because a layer is provided, when an external physical force is applied, it acts on the transistor. The difference between the stress and the stress applied to the organic EL element is small. In this specification, C is A and B When bonding, the configuration can be one where A and B are in contact with C, or where D on A and E on B are in contact with C. This also includes configurations where A and B are glued together by contact.

[0020] Furthermore, in light-emitting devices, stress strains such as compressive stress and tensile stress are generated in response to deformations such as bending. A neutral surface (a surface that does not stretch or shrink) that does not occur is located within the planarization layer, within the transistor, or within the organic EL. It is located within the element, near both the transistor and the organic EL element. Therefore, the transistor The stress values ​​applied to the transistor and the organic EL element can be reduced. And / or damage to the organic EL element due to bending or curvature can be suppressed. Therefore This enables the creation of highly reliable light-emitting devices.

[0021] In this specification, one surface and the other surface of the substrate or planarized layer are mutually opposing surfaces. It refers to.

[0022] Specifically, one aspect of the present invention is a light-emitting device comprising one side of a first flexible substrate and a second flexible Between one side of the substrate, a planarization layer and a transistor provided on one side of the planarization layer. And, a first electrode provided in contact with the other surface of the planarization layer, which is electrically connected to the transistor. , a layer containing a luminescent organic compound on the first electrode, and the layer containing the luminescent organic compound A light-emitting element having two electrodes and an adhesive layer that bonds the first flexible substrate and the second flexible substrate. and comprising, the thickness which is the distance from the other surface of the first flexible substrate to the other surface of the planarization layer. A is 0 of the thickness B, which is the distance from the other surface of the planarized layer to the other surface of the second flexible substrate. It is between 0.8 times and 1.2 times. In other words, the planarization layer is in contact with the other side of the first flexible substrate. The thickness A, which is the distance to the interface of the bonding layer, is the distance from the interface between the planarization layer and the adhesive layer to the second flexible substrate. The distance to the other surface is between 0.8 and 1.2 times the thickness B.

[0023] In the above-mentioned light-emitting device, it is preferable that the thickness A is 0.9 times or more and 1.1 times or less of the thickness B. It seems so.

[0024] Furthermore, in one aspect of the present invention, the light-emitting device comprises one side of the first flexible substrate and the second flexible substrate Between one side of the plane, there is a planarization layer, a transistor provided on one side of the planarization layer, and A first electrode is provided in contact with the other surface of the flattened layer and is electrically connected to the transistor. A layer containing a luminescent organic compound on the electrode, and a second electrode on the layer containing the luminescent organic compound A light-emitting element having poles, and an adhesive layer that bonds a first flexible substrate and a second flexible substrate, The thickness B, which is the distance from the other surface of the planarized layer to the other surface of the second flexible substrate, 0.8 times the thickness A, which is the distance from the other surface of the first flexible substrate to the other surface of the planarization layer. The above is 1.2 times or less.

[0025] In the above-mentioned light-emitting device, it is preferable that the thickness B is 0.9 times or more and 1.1 times or less of the thickness A. It seems so.

[0026] Elements that can withstand a small amount of stress are particularly preferably placed in a position close to the neutral plane. This reduces the stress on the element when an external physical force is applied. This is possible. Therefore, in the above light-emitting device, the planarization layer is in contact with the transistor. It is preferable.

[0027] A light-emitting device according to one aspect of the present invention is flexible, provided on an insulating surface, and emits light between a pair of electrodes. A light-emitting element having a layer containing a photosensitive organic compound sandwiched between layers, a first protective layer covering the light-emitting element, and It comprises a second protective layer provided on a first protective layer, and the first protective layer having a thickness of 0 The thickness is between 0.1 μm and less than 100 μm, and the second protective layer does not face the light-emitting element. It is preferable that the surface hardness is harder than the surface of the first protective layer.

[0028] Here, since the surface of the first protective layer is softer than the surface of the second protective layer, the second protective layer side When mechanical pressure is applied locally, or when the light-emitting device is bent, the light-emitting element may... This can alleviate the stress (this effect is also called a cushioning effect). If the first protective layer is less than 0.1 μm thick, the stress cannot be sufficiently relieved. The light-emitting element may be damaged. On the other hand, if the first protective layer is 100 μm or thicker, There is a risk that the flexibility of the light-emitting device may be compromised, or that the light-emitting device may curl. be.

[0029] Furthermore, in the region overlapping with the element layer (including light-emitting elements, etc.) and the region where the element layer is not provided, The thickness of protective layer 1 may vary. Similarly, if the top surface of the element layer is not flat, the same applies. The thickness of the first protective layer is not constant. Therefore, the thickness of the first protective layer is its most constant. The thickness of the thinnest part should be within the aforementioned thickness range.

[0030] Thus, because the first protective layer is formed to be sufficiently thin, the stress on the light-emitting element is relieved. Furthermore, the entire light-emitting device can be given high flexibility. Also, the first protective layer Even if it is formed so thinly, at least the surface of the light-emitting device is provided on the outermost surface The hard second protective layer prevents the light-emitting element from being destroyed by external mechanical pressure. This suppresses the process, resulting in a light-emitting device with high flexibility and high mechanical strength. Cut.

[0031] Furthermore, another embodiment of the present invention is a light-emitting device that is flexible and has a light-emitting organic compound between a pair of electrodes. A light-emitting element having a layer containing a composite material sandwiched between it, and a first protective layer and a third layer sandwiching the light-emitting element between them A protective layer, a second protective layer provided on a surface of the first protective layer that does not face the light-emitting element, and a third It comprises a fourth protective layer provided on a surface of the protective layer that does not face the light-emitting element. The first protective layer and the third protective layer have a thickness of 0.1 μm or more and less than 100 μm. Furthermore, The hardness of the second protective layer, at least on the surface not facing the light-emitting element, is greater than that of the surface of the first protective layer. The fourth protective layer is harder than the third protective layer, at least on the surface that does not face the light-emitting element. It is preferable that it be harder than the surface of the layer.

[0032] This configuration allows for protection of the light-emitting element (including the element layer) from both sides. Therefore, it is possible to create a light-emitting device with improved mechanical strength.

[0033] Furthermore, in this case, the first protective layer and the third protective layer are made of the same material, and the second protective It is preferable to construct the layer and the fourth protective layer from the same material, as this allows for material commonality.

[0034] Furthermore, in any of the above-mentioned light-emitting devices, the first protective layer and the second protective layer are resistant to visible light. It is translucent, and the light emitted from the light-emitting element is emitted through the first protective layer and the second protective layer. It is preferable that this be done.

[0035] In particular, light-emitting devices with a top-emission structure that emits light from the surface where the light-emitting element is formed. In this case, if the mechanical strength of the light-emitting surface is low, the light-emitting element will easily break, therefore the light emission described above By configuring the device in this way, it achieves a highly reliable design that combines flexibility with high mechanical strength. This makes it possible to realize a light-emitting device with a top-emission structure.

[0036] Furthermore, in any of the above light-emitting devices, between the light-emitting element and the second protective layer, the light-emitting element and the second protective layer are... Equipped with a color filter, the first protective layer and the second protective layer have light transmission to visible light. The light-emitting element exhibits white light emission, and the light emitted from the light-emitting element is transmitted to the first protective layer, color It is preferable that the material is injected through a filter and a second protective layer.

[0037] With this configuration, the second protective layer protects not only the light-emitting element but also the color filter. Because it also functions as a protective layer, it can prevent the color filter from being damaged and causing light leakage. .

[0038] Furthermore, in any of the above light-emitting devices, a photocatalytic effect is exhibited in contact with the surface of the second protective layer. It is preferable to have a fifth protective layer containing the material.

[0039] Due to the strong oxidizing effect of photocatalytic materials, the surface of the light-emitting device becomes contaminated with organic matter. This can suppress oily stains. Furthermore, such materials exhibit superhydrophilicity, which helps to control oily stains. It can prevent staining, and dirt can be easily washed away with running water. Therefore, When mechanical pressure is applied, such as wiping off organic matter that has adhered to or fixed to the surface of the light-emitting device. This reduces the frequency of damage, preventing scratches on the surface of the light-emitting device or damage to the light-emitting element. This can suppress problems such as [specific issues].

[0040] Furthermore, one aspect of the present invention comprises a first substrate, a second substrate facing the first substrate, and a part of the first substrate. A third substrate on which the two overlapping parts, a terminal section on the third substrate having two or more terminals, and terminals on the terminal section A light-emitting element is electrically connected to the first substrate and the second substrate, and the light-emitting element is sealed between the first and second substrates. The third substrate has an adhesive layer that bonds the first substrate and the second substrate together, and the thermal expansion coefficient of the third substrate is (Also known as) This is a light-emitting device with a luminescence of 10 ppm / K or less.

[0041] When the FPC is pressed onto the terminal portion, the heat applied to the anisotropic conductive film causes contact with the substrate having the terminal portion. The resin, wiring, or the substrate itself is prone to cracking. In one embodiment of the present invention, Furthermore, the thermal expansion coefficient of the third substrate is small, less than 10 ppm / K, and deformation due to heating is minimal. Therefore, it is possible to make it less likely for cracks to form in the resin or wiring that comes into contact with the third substrate, or in the third substrate itself. Cut.

[0042] Furthermore, since a substrate that does not transmit visible light can be used for the third substrate, the third substrate emits light. It is preferable that the elements do not overlap. With this configuration, the first substrate or the second substrate Since at least one of them should be a substrate that is transparent to visible light, the bottom emitter Cushion structure (bottom injection structure), top emission structure, dual emission structure ( Any panel (with a double-sided injection molding structure) can be easily obtained.

[0043] Furthermore, the first and third substrates are bonded together so that they overlap with the terminal section, and the first and third substrates The absolute value of the difference between the thermal expansion coefficient C of the laminated substrate, formed by bonding two boards together, and the thermal expansion coefficient D of the second substrate (|C). It is preferable that -D|) is within 10% of C or D.

[0044] The difference between the thermal expansion coefficient of the laminated substrate formed by bonding the first and third substrates and the thermal expansion coefficient of the second substrate is, If the thermal expansion coefficient of the laminated substrate or the thermal expansion coefficient of the second substrate is within 10%, then the substrate This makes it less likely to warp.

[0045] Furthermore, one aspect of the present invention includes a first substrate, a second substrate facing the first substrate, and two or more terminals. A terminal section having a terminal, a light-emitting element electrically connected to the terminal of the terminal section, and a first substrate and a second An adhesive layer is used to bond the first substrate and the second substrate together, so as to seal the light-emitting element between the substrates. The terminal portion is provided in a region of the first substrate that does not overlap with the second substrate, and the thermal expansion coefficient of the first substrate However, it is a light-emitting device with a concentration of 10 ppm / K or less.

[0046] In a light-emitting device according to one aspect of the present invention, the thermal expansion coefficient of the first substrate is small, at 10 ppm / K or less. Because there is little deformation due to heating, the resin and wiring in contact with the first substrate, or the first substrate itself, will not be damaged. This makes it harder for the lock to enter.

[0047] Furthermore, the absolute value of the difference between the thermal expansion coefficient E of the first substrate and the thermal expansion coefficient D of the second substrate (|ED|) is, Preferably, it is within 10% of D or E. The difference in thermal expansion coefficient between the first substrate and the second substrate is within 10% of the first substrate If the thermal expansion coefficient of at least one of the plate or the second substrate is within 10%, the substrate will be in one direction. It can be made less prone to warping.

[0048] Furthermore, it is preferable that the light-emitting device has an FPC (flexible printed circuit) heat-pressed onto the terminal portion.

[0049] Furthermore, one aspect of the present invention is an electronic device equipped with the above-mentioned light-emitting device as a display unit. By applying this, highly reliable electronic devices can be realized.

[0050] In this specification, "light-emitting device" refers to an image display device or a light source (including an illumination device). This refers to a connector on the light-emitting device, such as an FPC or TCP (Tape Carrier). A module with an aftermarket package attached, and a printed circuit board beyond the TCP. A module or substrate on which a light-emitting element is formed has a COG (Chip On Glue) attached. Modules with directly mounted ICs (integrated circuits) using the ass method are also included in the definition of light-emitting devices. It shall be considered as such. [Effects of the Invention]

[0051] In one embodiment of the present invention, when an external physical force is applied to a light-emitting device, the transistor The difference between the stress applied and the stress applied to the organic EL element is small, and the value of that stress is also small. This means that the transistor or organic EL element is prevented from being destroyed by bending or curving. This enables the creation of highly reliable light-emitting devices.

[0052] Furthermore, in one aspect of the present invention, a light-emitting device is provided that combines flexibility and high mechanical strength. It can be used.

[0053] Furthermore, in one aspect of the present invention, the resin in contact with the flexible substrate around the FPC terminal electrode This provides a light-emitting device in which cracks in the wiring or the substrate itself are suppressed. [Brief explanation of the drawing]

[0054] [Figure 1] A diagram showing a light-emitting device according to one embodiment of the present invention. [Figure 2] A diagram showing a light-emitting device according to one embodiment of the present invention. [Figure 3] A diagram showing a light-emitting device according to one embodiment of the present invention. [Figure 4] A diagram showing a light-emitting device according to one embodiment of the present invention. [Figure 5] A diagram illustrating a method for manufacturing a light-emitting device according to one aspect of the present invention. [Figure 6]A diagram illustrating a method for manufacturing a light-emitting device according to one aspect of the present invention. [Figure 7] A diagram showing a light-emitting device according to one embodiment of the present invention. [Figure 8] A diagram showing a light-emitting device according to one embodiment of the present invention. [Figure 9] A diagram showing a light-emitting device according to one embodiment of the present invention. [Figure 10] A figure showing a display device according to one embodiment of the present invention. [Figure 11] A figure showing a display device according to one embodiment of the present invention. [Figure 12] A diagram showing a lighting device according to one embodiment of the present invention. [Figure 13] A diagram showing a light-emitting device according to one embodiment of the present invention. [Figure 14] A diagram showing a light-emitting device according to one embodiment of the present invention. [Figure 15] A diagram showing a light-emitting device according to one embodiment of the present invention. [Figure 16] A diagram illustrating a method for manufacturing a light-emitting device according to one aspect of the present invention. [Figure 17] A diagram showing an organic EL element. [Figure 18] A diagram showing electronic equipment and lighting devices. [Figure 19] A diagram showing electronic equipment. [Figure 20] A figure showing the results of the example. [Modes for carrying out the invention]

[0055] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be modified in various ways. It will be easily understood by those skilled in the art to obtain this. Therefore, the present invention is as shown in the embodiments below. The description is not to be interpreted as being limited to the stated content. The same reference numeral is used in common across different drawings for parts that are identical or have similar functions. I will omit the explanation of that repetition.

[0056] In each figure described herein, the size of each component, the thickness of the layer, or the area is clearly indicated. It may be exaggerated for illustrative purposes. Therefore, it is not necessarily limited to that scale.

[0057] (Embodiment 1) In this embodiment, a light-emitting device according to one aspect of the present invention will be described with reference to Figures 1 and 2.

[0058] Figure 1 shows a schematic diagram of a light-emitting device according to one aspect of the present invention. The light-emitting device shown in Figure 1 is a first flexible A planarization layer 105 is placed between one surface of the substrate 101 and one surface of the second flexible substrate 111. A transistor 103 is provided on one side of the planarization layer 105, and the other side of the planarization layer 105 An organic EL element 107 provided on one side, a first flexible substrate 101 and a second flexible The substrate 111 sandwiches the transistor 103, the planarization layer 105, and the organic EL element 107. The device comprises an adhesive layer 109 to be bonded, and the organic EL element 107 is on the other side of the planarization layer 105. A first electrode 171 is provided in contact with the transistor 103 and is electrically connected to the first electrode A layer (EL layer) 173 containing a luminescent organic compound on pole 171, and a second layer on EL layer 173 It has an electrode 175.

[0059] In the light-emitting device shown in Figure 1, the planarization layer 105 is formed from the other side of the first flexible substrate 101. The distance to the other surface is indicated as thickness A. In the light-emitting device shown in Figure 1, the planarization layer 10 The distance from the other side of 5 to the other side of the second flexible substrate 111 is denoted as thickness B. In other words, thickness A is the thickness of the planarization layer 105 and adhesive layer 10 from the other side of the first flexible substrate 101. The distance to interface 9 is shown, and thickness B is from the interface between the planarization layer 105 and the adhesive layer 109 to the second This indicates the distance to the other surface of the flexible substrate 111.

[0060] In a light-emitting device according to one aspect of the present invention, thickness A is preferably 0.8 times or more and 1.2 times or less than thickness B. (The thickness is 0.9 times or more and 1.1 times or less), or thickness B is 0.8 times or more and 1. It is 2 times or less (preferably 0.9 times or more and 1.1 times or less).

[0061] In one embodiment of the present invention, the light-emitting device has thickness A (thickness on the side including transistor 103) and thickness B Each layer is arranged so that the difference in thickness (of the side containing the organic EL element 107) is minimized. Therefore, when an external physical force is applied, the stress on transistor 103 and the organic EL The difference in stress between element 107 and other elements is small.

[0062] Furthermore, in light-emitting devices, stress strains such as compressive stress and tensile stress are generated in response to deformations such as bending. The neutral surface (non-stretching / non-contracting surface) where no expansion or contraction occurs is within the planarization layer 105 and within the transistor 103. Or, within the organic EL element 107, or in the vicinity of both the transistor 103 and the organic EL element 107. It is located there. Therefore, the value of the stress applied to transistor 103 and organic EL element 107 is They can be made smaller. Therefore, transistor 103 and / or organic EL element 107 bend This prevents damage caused by bending or warping, enabling the realization of a highly reliable light-emitting device.

[0063] The further an element is from the neutral plane, the greater the magnitude of the compressive or tensile stress it experiences. Elements that can withstand small stress levels are particularly preferred to be placed in positions close to the neutral plane. This reduces the stress on the element when an external physical force is applied. Therefore, in a light-emitting device according to one aspect of the present invention, the planarization layer 105 is It is preferable to make contact with transistor 103.

[0064] An example of a material that can be used in a light-emitting device according to one embodiment of the present invention is described below. Each component of the light-emitting device is used in the same way as the embodiments described later. Materials that can be used are also applicable.

[0065] [Flexible board] The first flexible substrate 101 and the second flexible substrate 111 are made of a flexible material. In particular, the substrate on the side that extracts light from the organic EL element 107 has flexibility, as well as visible light A material that also possesses light transmission (hereinafter referred to as light transmission) is used.

[0066] Examples of materials that are flexible and translucent include polyethylene terephthalate (PET). ), polyester resins such as polyethylene naphthalate (PEN), polyacrylonitrile Resins, polyimide resins, polymethyl methacrylate resins, polycarbonate (PC) resins Polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, poly Examples include styrene resin, polyamide-imide resin, and polyvinyl chloride resin. In particular, thermal expansion It is preferable to use materials with low tensile strength, such as polyamide-imide resin and polyimide resin. Fat, PET, etc. can be suitably used. In addition, a substrate (prep) in which resin is impregnated into a fibrous material can be used. This involves using substrates made by mixing inorganic fillers with organic resin to reduce the coefficient of thermal expansion (also known as REGs). It can also be done this way.

[0067] When a flexible and light-transmitting material contains fibers, the fibers are organic compounds or High-strength fibers made of inorganic compounds are used. Specifically, high-strength fibers refer to fibers with a tensile modulus or Young's modulus. This refers to fibers with high density, and typical examples include polyvinyl alcohol-based fibers and polyester. Polyamide fibers, polyethylene fibers, aramid fibers, poly(p-phenylene) fibers Examples include benzobisoxazole fibers, glass fibers, or carbon fibers. Examples include glass fibers using E-glass, S-glass, D-glass, Q-glass, etc. These are used in the form of woven or nonwoven fabrics, and the structure is formed by impregnating the fibrous material with resin and curing the resin. The fabricated material may be used as a flexible substrate. The flexible substrate may be a structure made of fibers and resin. Using this method is preferable because it improves reliability against fracture due to bending or localized pressure.

[0068] To improve the efficiency of light extraction, a higher refractive index is preferable for flexible and light-transmitting materials. For example, by dispersing an inorganic filler with a high refractive index in an organic resin, the organic resin This makes it possible to create substrates with a higher refractive index than substrates made of only these materials. In particular, for small particles with a diameter of 40 nm or less. Using inorganic fillers is preferable because it does not compromise optical transparency.

[0069] Furthermore, the substrate on the side from which light is not extracted does not need to be translucent, as mentioned above. In addition to the substrate, metal substrates can also be used. The thickness of the metal substrate is determined by its flexibility and bendability. To obtain this, the particle size is 10 μm to 200 μm, preferably 20 μm to 50 μm. This is preferable. Because metal substrates have high thermal conductivity, they effectively reduce the heat generated by the light emission of organic EL elements. It can effectively dissipate heat.

[0070] There are no particular limitations on the materials that make up the metal substrate, but for example, aluminum, copper, nickel Preferably, use a metal alloy such as a kerl, aluminum alloy, or stainless steel. It is possible.

[0071] As a flexible substrate, the layer using the above material protects the surface of the light-emitting device from scratches and other damage. A coating layer (for example, a silicon nitride layer) or a layer of material capable of distributing pressure (for example, A It may also be constructed by laminating with a laminate (such as a laminate resin layer). Furthermore, organic EL To suppress the reduction in the lifespan of the element, silicon nitride, silicon oxynitriding (also written as oxynitriding) Films containing nitrogen and silicon, such as CON, and films containing nitrogen and aluminum, such as aluminum nitride. It may be equipped with a protective film with low water permeability.

[0072] [transistor] The structure of the transistor used in a light-emitting device according to one aspect of the present invention is not particularly limited. For example, It can be a staggered transistor or an inverse staggered transistor. Whether it is a top-gate or bottom-gate transistor structure That's good. Furthermore, there are no particular limitations on the materials used in the transistor. For example, silicon. Applying transistors that use germanium or oxide semiconductors in the channel formation region. It is possible.

[0073] [Planarization layer] The planarization layer 105 is an insulating film provided to reduce surface irregularities caused by the transistor 103. Yes, there are. For example, polyimide, acrylic, polyamide, polyimideamide, benzocyclob Organic materials such as tereol resins can be used. Also, low-dielectric constant materials (low-k materials) can be used. The following can be used. In addition, a planarization layer 105 can be formed by stacking multiple insulating films. You may do so.

[0074] [Organic EL element] The structure of the organic EL element used in a light-emitting device according to one aspect of the present invention is not particularly limited. Organic EL elements with a cushion structure may be used, or organic EL elements with a bottom emission structure may be used. Alternatively, a dual-emission organic EL element may be used. An example of the element configuration will be described in detail in Embodiment 7.

[0075] [Adhesive layer] When using an organic EL element with a top emission structure, the adhesive layer 109 is the organic EL element It is formed using a light-transmitting material. For example, a photocurable adhesive such as an ultraviolet-curing type, reaction Various types of curing adhesives, such as curing adhesives, thermosetting adhesives, and anaerobic adhesives, can be used. These adhesives include epoxy resin, acrylic resin, silicone resin, and phenolic resin. Examples include resins and imide resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. For example, the above adhesive may contain a desiccant (such as zeolite). This allows for organic This can suppress the degradation of the EL element. Furthermore, it is preferable that the adhesive layer has a high refractive index. For example, by mixing in fillers with a high refractive index (such as titanium dioxide or zirconium) This can improve the light extraction efficiency from organic EL elements.

[0076] Even when using an organic EL element with a bottom emission structure, a top emission structure is also available. The same material as used when an EL element is used can be used for the adhesive layer 109. However, The light transmittance of layer 109 is not a requirement.

[0077] <Example of Light-Emitting Device Configuration 1> Figure 2 shows an example of a specific configuration of a light-emitting device to which one aspect of the present invention is applied. In Figure 2(A), Figure 2(A) shows a plan view of a light-emitting device according to one embodiment of the present invention. The light-emitting device shown in Figure 2(A) has a pixel section 450 2. Signal line drive circuit 4503a, signal line drive circuit 4503b, scan line drive circuit 4504a It has a scan line drive circuit 4504b and an FPC 4505. Figure 2(B) is shown in Figure 2(A). This shows a cross-sectional view between the points C and D, indicated by the dashed line.

[0078] The light-emitting device shown in Figure 2(B) consists of one side of the first flexible substrate 101 and the second flexible substrate Between one side of 111, a planarization layer 105 and a material provided on one side of the planarization layer 105 The transistor 103 and the organic EL element 107 provided on the other side of the planarization layer 105 The device comprises an adhesive layer 109 for bonding the first flexible substrate 101 and the second flexible substrate 111. El.

[0079] A base film 121 is provided on one surface of the first flexible substrate 101, and on the base film 121 A transistor 103 is provided. Transistor 103 is connected to gate electrode 131, gate The insulating film 133, the semiconductor layer 135, and the source electrode or drain electrode are respectively It has conductive layers 137a and 137b.

[0080] An insulating film 141 and a planarization layer 105 are provided on the transistor 103 to cover the transistor. It is being done.

[0081] The organic EL element 107 has a first electrode 171 electrically connected to a conductive layer 137b, and an EL layer It has electrode 173 and a second electrode 175. The end of the first electrode 171 is covered by a partition wall 161. It is being done.

[0082] In Figure 2(B), from the other side of the first flexible substrate 101 to the other side of the planarization layer 105 The distance is shown as thickness A. In Figure 2(B), the second posterior layer is viewed from the other side of the planarized layer 105. The distance to the other surface of the flexible substrate 111 is shown as thickness B.

[0083] In a light-emitting device according to one aspect of the present invention, thickness A is preferably 0.8 times or more and 1.2 times or less than thickness B. (The thickness is 0.9 times or more and 1.1 times or less), or thickness B is 0.8 times or more and 1. It is 2 times or less (preferably 0.9 times or more and 1.1 times or less). Therefore, from the outside, physically When a force is applied, the stress on transistor 103 and the stress on organic EL element 107 The difference from the stress is small.

[0084] Furthermore, in light-emitting devices, stress strains such as compressive stress and tensile stress are generated in response to deformations such as bending. Neutral surfaces (non-stretchable surfaces) where no expansion or contraction occurs are located within the planarization layer 105, within the transistor 103, and It is located near both the transistor 103 and the organic EL element 107, such as within the organic EL element 107. Therefore, the stress values ​​applied to transistor 103 and organic EL element 107 are respectively It can be made smaller. Therefore, transistor 103 and / or organic EL element 107 can be bent. Damage caused by bending or twisting can be suppressed. Therefore, a highly reliable light-emitting device can be realized. can.

[0085] An example of materials that can be used in the light-emitting device shown in Figure 2 is listed below. Note that flexible substrates and the like are available at [link / location]. Explanations of the component configurations, which are examples of materials, will be omitted.

[0086] [Undercoat] It is preferable to provide a base film 121 in order to stabilize the characteristics of the transistor 103. The film 121 can be silicon oxide, silicon nitride, silicon oxide nitride, or silicon oxide nitride. It can be fabricated using inorganic insulating films such as the above, either as a single layer or in a laminated form. The underlayer 121 is It can be formed using methods such as puttering, plasma CVD, coating, and printing. For example, Using the puttering method, the film thickness is 10 nm to 3000 nm, preferably 200 nm or less. A silicon oxide film of 1500 nm or less should be formed on top. Note that the undercoat film 121 is not necessary. If it doesn't exist, you don't need to set it up.

[0087] [transistor] <Gate gate> The material of the gate electrode 131 is molybdenum, titanium, chromium, tantalum, tungsten, and Metallic materials such as luminium, copper, neodymium, scandium, or alloy materials containing these elements. It can be formed as a single layer or in layers using this material.

[0088] <Gate insulating film> The gate insulating film 133 is formed using plasma CVD or sputtering, etc. Cone, silicon nitride, silicon oxide nitride, silicon oxide nitride, or aluminum oxide It can be formed in layers or by stacking. For example, SiH4, N2O can be used as the film-forming gas. A silicon oxide nitride film can be formed using plasma CVD.

[0089] <Semiconductor layer> The semiconductor layer 135 can be formed using silicon semiconductors or oxide semiconductors. The crystallinity of the semiconductor is not particularly limited; it can be an amorphous semiconductor or a crystalline semiconductor. Using any of the following: (microcrystalline semiconductor, polycrystalline semiconductor, or semiconductor having a crystalline region in part) This is also good. Using a crystalline semiconductor is preferable because it suppresses the degradation of transistor characteristics. It seems so. Examples of silicon semiconductors include amorphous silicon, single-crystal silicon, and polycrystalline silicon. This can be used, and as an oxide semiconductor, In-Ga-Zn-O based metal oxides, etc., can be used. It is possible to have one oxide semiconductor applicable to one aspect of the present invention, as shown in Embodiment 8. This will be explained later.

[0090] <Source electrode, drain electrode> Conductive layers 137a and 137b function as source electrodes and drain electrodes, respectively. Examples include aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten. A metal film containing elements selected from the above, or a metal nitride film (titanium nitride film, Molybdenum nitride film, tungsten nitride film, etc. can be used. Also, aluminum Titanium, molybdenum, tungsten, etc. are placed on either the underside or upperside of a metal film such as copper, or on both sides. Which high-melting-point metal film or metal nitride film (titanium nitride film, molybdenum nitride film, titanium nitride film) A configuration in which ngsten films are stacked may also be used.

[0091] Furthermore, the conductive layers 137a and 137b may be formed from conductive metal oxides. Examples of electrically charged metal oxides include indium oxide (In2O3, etc.) and tin oxide (SnO2, etc.). Zinc oxide (ZnO), indium tin oxide (ITO) e) Indium zinc oxide (In2O3-ZnO, etc.), or these metal oxide materials A material containing silicon oxide can be used.

[0092] [sulfonamide] The insulating film 141 has the effect of suppressing the diffusion of impurities into the semiconductor that constitutes the transistor. The insulating film 141 may be a silicon oxide film, a silicon oxide nitride film, or an aluminum oxide film. Inorganic insulating films such as the following can be used.

[0093] [Bulkhead] The partition wall 161 is formed using an organic insulating material or an inorganic insulating material. In particular, photosensitive resin Using a resin material, the side walls of the opening are formed to be inclined surfaces with a continuous curvature. It is preferable to form it.

[0094] Furthermore, even if a sealing film with low moisture permeability is formed between the adhesive layer 109 and the second electrode 175 Good. Examples of sealing films with low moisture permeability include silicon oxide, silicon nitride, and aluminum oxide. Um, etc., can be used.

[0095] The light-emitting device of this embodiment reacts to a transistor when an external physical force is applied. The difference between the stress applied to the organic EL element and the stress applied to the organic EL element is small, and the stress value is small. Therefore This suppresses the destruction of transistors or organic EL elements due to bending or curvature, and This enables the creation of highly reliable light-emitting devices.

[0096] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0097] (Embodiment 2) In this embodiment, a light-emitting device according to one aspect of the present invention will be described with reference to Figures 3 to 6.

[0098] In this embodiment, the light-emitting device is constructed by first fabricating elements such as transistors on a fabricated substrate, and then the fabricated substrate It is manufactured using a technique that involves transferring the element from one surface to a flexible substrate.

[0099] <Example of Light-Emitting Device Configuration 2> Figure 3 shows an example of a specific configuration of a light-emitting device to which one aspect of the present invention is applied. In Figure 3(A), Figure 3(A) shows a plan view of a light-emitting device according to one embodiment of the present invention. The light-emitting device shown in Figure 3(A) has a pixel section 450 2. It has a signal line drive circuit 4503, a scan line drive circuit 4504, and an FPC 4505. Figure 3(B) shows a cross-sectional view of the section between the dashed line EF in Figure 3(A).

[0100] The light-emitting device shown in Figure 3(B) consists of one side of the first flexible substrate 101 and the second flexible substrate Between one side of 111, a planarization layer 105 and a material provided on one side of the planarization layer 105 The transistor 103 and the organic EL element 107 provided on the other side of the planarization layer 105 The device comprises an adhesive layer 109 for bonding the first flexible substrate 101 and the second flexible substrate 111. El.

[0101] One side of the first flexible substrate 101 and the underlayer 121 are bonded together by an adhesive layer 123. There are multiple transistors (transistor 103, transistor 1) on the undercoat 121. 43, transistor 145, and transistor 147 are provided.

[0102] Furthermore, an insulating film 141 and a planarization layer 105 are provided to cover multiple transistors. The flattening layer 105 has a laminated structure of a first flattening layer 151 and a second flattening layer 153. Between the first planarization layer 151 and the second planarization layer 153, the source power of transistor 103 A wiring 155 is provided to electrically connect the electrode or drain electrode to the lower electrode of the organic EL element. It is being done.

[0103] Figure 3(B) shows an organic EL element with a bottom emission structure. On the insulating film 141, A color filter 157 is provided in the region that overlaps with the light-emitting region of the organic EL element 107. The end of the lower electrode of the organic EL element is covered by a partition wall 161.

[0104] <Example of Light-Emitting Device Configuration 3> Figure 4 shows an example of a specific configuration of a light-emitting device to which one aspect of the present invention is applied. In Figure 4(A), A plan view of a light-emitting device according to one embodiment of the present invention is shown. The light-emitting device shown in Figure 4(A) has a pixel section 450 2. Signal line drive circuit 4503a, signal line drive circuit 4503b, scan line drive circuit 4504a It has a scan line drive circuit 4504b and an FPC 4505. Figure 4(B) is shown in Figure 4(A). This shows a cross-sectional view between the dashed lines GH.

[0105] The light-emitting device shown in Figure 4(B) consists of one side of the first flexible substrate 101 and the second flexible substrate Between one side of 111, a planarization layer 105 and a material provided on one side of the planarization layer 105 The transistor 103 and the organic EL element 107 provided on the other side of the planarization layer 105 The device comprises an adhesive layer 109 for bonding the first flexible substrate 101 and the second flexible substrate 111. El.

[0106] One side of the first flexible substrate 101 and the underlayer 121 are bonded together by an adhesive layer 123. Multiple transistors (transistors 103, etc.) are provided on the base film 121. Yes, they are.

[0107] Furthermore, an insulating film 141 and a planarization layer 105 are provided to cover multiple transistors. A partition wall 161 is provided on the flattening layer 105 to cover the end of the lower electrode of the organic EL element 107. It is.

[0108] In the light-emitting device shown in Figure 4(B), further, a first flexible substrate 101 and a second flexible substrate Spacers that adjust the spacing between cells (also called the cell gap), and the upper electrodes of organic EL elements. Auxiliary wiring that electrically connects to this may be provided between the partition wall 161 and the second flexible substrate 111. stomach.

[0109] One side of the second flexible substrate 111 and the underlayment 185 are bonded together with an adhesive layer 187. On the undercoat 185, in the region that overlaps with the light-emitting region of the organic EL element 107, A color filter 181 and a black matrix 18 provided in the area overlapping with the partition wall 161. 3 exists.

[0110] Figures 3(B) and 4(B) show the planarization layer 105 from the other side of the first flexible substrate 101. The distance to the other surface is shown as thickness A, and the distance from the other surface of the flattening layer 105 to the second flexible The distance to the other surface of the substrate 111 is shown as thickness B.

[0111] In a light-emitting device according to one aspect of the present invention, thickness A is preferably 0.8 times or more and 1.2 times or less than thickness B. (The thickness is 0.9 times or more and 1.1 times or less), or thickness B is 0.8 times or more and 1. It is 2 times or less (preferably 0.9 times or more and 1.1 times or less). Therefore, from the outside, physically When a force is applied, the stress on transistor 103 and the stress on organic EL element 107 The difference from the stress is small.

[0112] Furthermore, in light-emitting devices, stress strains such as compressive stress and tensile stress are generated in response to deformations such as bending. Neutral surfaces (non-stretchable surfaces) where no expansion or contraction occurs are located within the planarization layer 105, within the transistor 103, and It is located near both the transistor 103 and the organic EL element 107, such as within the organic EL element 107. Therefore, the stress values ​​applied to transistor 103 and organic EL element 107 are respectively It can be made smaller. Therefore, transistor 103 and / or organic EL element 107 can be bent. Damage caused by bending or twisting can be suppressed. Therefore, a highly reliable light-emitting device can be realized. can.

[0113] Examples of materials that can be used in the light-emitting devices shown in Figures 3 and 4 are listed below. Note that this refers to a flexible substrate. The explanation of the components whose materials were previously exemplified will be omitted. The components may also be made of materials that can be used for similar components as illustrated in other embodiments. Applicable.

[0114] [Adhesive layer] Materials that can be used for adhesive layer 123 and adhesive layer 187 include the same as adhesive layer 109. Various materials can be used. In particular, the material used on the side that extracts light from the light-emitting element is a refractive material. It is preferable that the material has a high percentage.

[0115] [Color filter, black matrix] Color filters are provided for the purpose of adjusting the color of light emitted from organic EL elements. For example, white When using color-emitting light-emitting elements to create a full-color light-emitting device, each element will emit a different color. Multiple organic EL elements overlapping with the R filter are used. In that case, red (R) and green (G) You can use three colors, including blue (B), or you can add yellow (Y) to make a total of four colors. Each color filter is produced using various materials, printing methods, inkjet methods, and photolithography. These are formed at the desired locations using etching methods such as the graphic method.

[0116] The black matrix (also referred to as the light-shielding film) is placed between adjacent color filters. The black matrix blocks light from adjacent OLED elements, and the black matrix blocks light from adjacent OLED elements. This suppresses color mixing between the sub-elements. Here, the edges of the color filter are connected to the black matrix. By overlapping them, light leakage can be suppressed. The black matrix is Materials that block light emission from organic EL elements can be used, such as metals and organic resins. It can be formed using materials. The black matrix is ​​used for the drawing of the drive circuit section, etc. It may be provided in areas other than the elemental part.

[0117] Furthermore, in the light-emitting device shown in Figure 4(B), the color filter 181 and the black matrix 1 An overcoat may be provided to cover 83. By providing an overcoat, the color fit This prevents the diffusion of impurities contained in the EL material into the organic EL element. The base is composed of a material that transmits light emitted from the organic EL element, such as a silicon nitride film. By using inorganic insulating films such as silicon oxide films, or organic insulating films such as acrylic films and polyimide films... This can be achieved, and a laminated structure of an organic insulating film and an inorganic insulating film may also be used.

[0118] In this embodiment, a light-emitting device using a color filter method was described as an example, but The composition of the lighting is not limited to this. For example, a color-shading method or a color-transformation method may also be applied.

[0119] [Undercoat] The base film 185 can be formed from the same material as the base film 121. If it's not necessary, it doesn't need to be provided.

[0120] [wiring] Wiring 155 can be made of a highly conductive material, for example, the same material used for the electrodes of a transistor. Materials that can be used can be used.

[0121] Spacers on the partition wall 161 are formed using inorganic insulating materials, organic insulating materials, and metal materials. This is possible. For example, as an organic insulating material, a tree having negative or positive photosensitivity can be used. Oil materials, non-photosensitive resin materials, etc., can be used. In addition, as for metal materials, titanium Aluminum and other materials can be used.

[0122] The method for fabricating the light-emitting device shown in Figures 3 and 4 will be explained using Figures 5 and 6.

[0123] <Method for fabricating a light-emitting device 1> The method for fabricating the light-emitting device shown in Figure 3 will be explained using Figure 5.

[0124] First, a release layer 503 is formed on the fabricated substrate 501, and a layer to be released 505 is formed on the release layer 503. To accomplish (Figure 5(A)).

[0125] There are no particular limitations on the layer to be formed as the peelable layer 505. Here, as the peelable layer 505, Protective layer, undercoat 121, transistor 103, insulating film 141, color filter 157, flat The flattening layer 105, the lower electrode of the organic EL element 107, and the partition wall 161 are formed in order. Peelable layer 5 As 05, further, the EL layer of the organic EL element 107, the upper electrode, and the organic EL element 107 are sealed. A sealing film or the like may be formed to prevent peeling. Also, a protective layer or an undercoat 121 may be used as the peelable layer 505. Only the material can be formed, and after peeling and transposition, transistors 103 and the like may be fabricated.

[0126] The fabricated substrate 501 can be a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or a gold substrate. A substrate such as a casing can be used.

[0127] Furthermore, the glass substrate can be, for example, aluminosilicate glass or aluminoborosilicate glass. Glass materials such as barium borosilicate glass can be used. The temperature of the subsequent heat treatment. When it is high, it is advisable to use those with a strain point of 730 °C or higher. By incorporating a large amount of barium oxide (B aO), a more practical heat-resistant glass can be obtained. Additionally, crystallization gala sses and the like can be used.

[0128] When using a glass substrate for the production substrate 501, an insulating film such as a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or a silicon nitride oxide film is formed between the production substrate 501 and the release layer 503. This can prevent contamination from the glass substrate and is preferable.

[0129] The release layer 503 is composed of an element selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, silicon, an alloy material containing the element, or a compound material containing the element, and is a single-layer or laminated layer. The crystal structure of the layer containing silicon can be any of amorphous, microcrystalline, or polycrystalline. Additionally, any of metal oxides such as aluminum oxide, gallium oxide, zinc oxide, titanium dioxide, indium oxide, indium tin oxide, indium zinc oxide, and InGa ZnO (IGZO) can also be used.

[0130] The release layer 503 can be formed by sputtering, plasma CVD, coating, printing, etc. The coating method includes spin coating, droplet ejection, and dispensing.

[0131] When the release layer 503 has a single-layer structure, it is preferable to form a layer containing a tungsten layer, a molybdenum layer, or a mixture of tungsten and molybdenum. Additionally, a layer containing an oxide or oxynitride of tungsten, a layer containing an oxide or oxynitride of molybdenum, or a layer containing ​​​​​​​​​ A layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum may be formed. And the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

[0132] Also, when forming a laminated structure of a layer containing tungsten and a layer containing tungsten oxide as the release layer 503, a layer containing tungsten is formed, and an insulating film formed of an oxide is formed on the upper layer thereof. By doing so, it may be utilized that a layer containing tungsten oxide is formed at the interface between the tungsten layer and the insulating film. Further, the surface of the layer containing tungsten may be treated by thermal oxidation treatment, oxygen plasma treatment, treatment with a solution having a strong oxidizing power such as ozone water, etc. to form a layer containing tungsten oxide. Also, the plasma treatment and the heat treatment may be performed in an atmosphere of oxygen, nitrogen, nitrous oxide alone, or a mixed gas of the gas and other gases. By changing the surface state of the release layer 503 by the plasma treatment and the heat treatment described above, it is possible to control the adhesion between the release layer 503 and the protective layer formed later.

[0133] The protective layer contained in the layer to be peeled 505 is preferably formed in a single layer or multiple layers using silicon nitride, silicon oxynitride, or silicon nitride oxide, etc.

[0134] The protective layer can be formed using a sputtering method, a plasma CVD method, a coating method, a printing method, etc. For example, by forming the film by the plasma CVD method with the film formation temperature being 250°C or higher and 400°C or lower, a dense and very low water permeability film can be obtained. The thickness of the protective layer is 10 nm or more and 3000 nm or less, and further 200 nm or more and 1500 nm or less. ​​​​​​​​​​​​This is preferable. Furthermore, if the undercoat 121 also functions as a protective layer, a separate protective layer may be omitted. stomach.

[0135] Next, the peel-off layer 505 and the temporary support substrate 507 are bonded together using the peel-off adhesive 509. The peeling layer 503 is used to peel off the layer to be peeled 505 from the fabricated substrate 501. The abscission layer 505 is provided on the temporary support substrate 507 side (Figure 5(B)).

[0136] The temporary support substrate 507 can be a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, A metal substrate or the like can be used. Furthermore, the heat resistance that can withstand the processing temperature of this embodiment is A plastic substrate may be used, or a flexible substrate such as a film may be used. .

[0137] The release adhesive 509 can be soluble in water or solvents, or it can be plasticized by irradiation with ultraviolet light or other light sources. It is possible to do so by moving the temporary support substrate 507 and the peel-off layer 505 when necessary. Use an adhesive that can be separated chemically or physically.

[0138] Furthermore, various methods can be used as appropriate for the transfer process to the temporary support substrate. For example, peeling If a layer containing a metal oxide film is formed on the side in contact with the layer to be peeled, then the metal oxide film By weakening it through crystallization, the layer to be peeled off can be removed from the fabricated substrate. In a case where a hydrogen-containing amorphous silicon film is formed as a release layer between a highly durable fabricated substrate and the layer to be released, In this case, the amorphous silicon film is irradiated with laser light or etched. By removing the film, the layer to be peeled off can be separated from the fabricated substrate. Also, as the peeled layer Then, a layer containing a metal oxide film is formed on the side in contact with the layer to be peeled off, and the metal oxide film is crystallized by Vulcanize it, and then remove a part of the release layer by etching with a solution or a fluorinated gas such as NF3, BrF3, or ClF3. After that, it can be peeled off in the weakened metal oxide film. Furthermore, a film containing nitrogen, oxygen, hydrogen, etc. (for example, an amorphous silicon film containing hydrogen, a hydrogen-containing alloy film, an oxygen-containing alloy film, etc.) is used as the release layer, and the release layer is irradiated with a laser beam to release the nitrogen, oxygen, or hydrogen contained therein as a gas to promote the peeling of the layer to be peeled and the substrate. This method may also be used.

[0139] Alternatively, the production substrate on which the layer to be peeled is formed can be mechanically removed, or removed by etching with a solution or a fluorinated gas such as NF3, BrF3, ClF3, etc. In this case, the release layer may not be provided. In this case, the release layer may not be provided.

[0140] Also, by combining a plurality of the above peeling methods, the transfer process can be performed more easily. That is, by using laser beam irradiation, etching of the release layer with a gas or a solution, a sharp knife or a scalpel, etc., and making the release layer and the layer to be peeled in a state where they are easily peeled, it can also be peeled by a physical force (such as by a machine). It can also be peeled by a physical force (such as by a machine).

[0141] Also, a liquid may be infiltrated into the interface between the release layer and the layer to be peeled to peel the layer to be peeled from the production substrate. Also, peeling may be performed while applying a liquid such as water during peeling. Also, peeling may be performed while applying a liquid such as water during peeling.

[0142] As another peeling method, when the release layer 503 is formed of tungsten, it is advisable to perform peeling while etching the release layer 503 with a mixed solution of ammonia water and hydrogen peroxide water. As another peeling method, when the release layer 503 is formed of tungsten, it is advisable to perform peeling while etching the release layer 503 with a mixed solution of ammonia water and hydrogen peroxide water. .

[0143] Next, the peeled-off layer 503 or protective layer is peeled off from the fabricated substrate 501 and exposed. A first adhesive layer 123 made of an adhesive different from the release adhesive 509 is applied to the abscission layer 505. The flexible substrate 101 is bonded (Figure 5(C)).

[0144] Subsequently, the release adhesive 509 is dissolved or plasticized to remove the temporary support substrate 507. After removing the support substrate 507, a peeling tool is used to expose the lower electrode of the organic EL element 107. Remove adhesive 509 with water or a solvent (Figure 5(D)).

[0145] As described above, the lower electrodes of the transistor 103 and the organic EL element 107 are formed. The release layer 505 can be fabricated on the first flexible substrate 101.

[0146] Subsequently, the EL layer and upper electrode (not shown in the figure) of the organic EL element 107 were fabricated and bonded together. The second flexible substrate 111 is bonded using layer 109 (Figure 5(E)).

[0147] Finally, attach the FPC4505 to each electrode of the input / output terminal section using an anisotropic conductive material. If necessary, IC chips or similar components may be mounted on the device.

[0148] Based on the above, the light-emitting device shown in Figure 3 can be manufactured.

[0149] Furthermore, if peeling is possible at the interface between the fabricated substrate and the peel-off layer, a peel-off layer may not be necessary. For example, a glass substrate is used as the fabrication substrate 501, and an organic resin such as polyimide is placed in contact with the glass. A lipid film is formed, and a protective layer, undercoat, transistors, etc. are formed on the organic resin film. In this case, By heating the organic resin film, delamination can be achieved at the interface between the fabricated substrate 501 and the organic resin film. Yes, it is possible. Then, the organic resin film and the first flexible substrate 101 are bonded together using the adhesive layer 123. Alternatively, a metal layer can be placed between the fabricated substrate and the organic resin film, and an electric current can be passed through the metal layer. The metal layer may be heated and peeled off at the interface between the metal layer and the organic resin film.

[0150] <Method for fabricating a light-emitting device 2> The method for fabricating the light-emitting device shown in Figure 4 will be explained using Figure 6.

[0151] First, a release layer 503 is formed on the fabricated substrate 501, and a layer to be released 505 is formed on the release layer 503. This is achieved (Figure 6(A)).

[0152] Here, the peelable layer 505 consists of a protective layer, an underlayer 121, a transistor 103, and an insulating film. 141, planarization layer 105, lower electrode of organic EL element 107, partition wall 161, organic EL element 1 The EL layer and upper electrode of 07 are formed in order. Furthermore, a sealing film is formed to enclose the organic EL element 107. It may form.

[0153] Furthermore, a release layer 553 is formed on the fabricated substrate 551, and a layer to be released 555 is formed on the release layer 553. This is achieved (Figure 6(B)).

[0154] Here, the layer to be peeled off 555 is defined as the base film 185, the black matrix 183, and the color - The filter 181 is formed in sequence. A protective layer is formed between the release layer 553 and the base film 185. That's fine.

[0155] Next, the fabricated substrate 501 and the fabricated substrate 551 are bonded together using the adhesive layer 109 (Figure 6). (C)

[0156] Then, the peeling layer 505 is peeled off from the fabricated substrate 501 using the peeling layer 503. Next, The release layer 503 or protective layer (or underlayer 121) is peeled off from the fabricated substrate 501 and exposed. The first flexible substrate 101 is bonded to the peelable layer 505 using the adhesive layer 123 (Figure 6). (D)).

[0157] Similarly, the peel-off layer 555 is peeled off from the fabricated substrate 551 using the peel-off layer 553. Next, The peeled layer 555 is peeled off from the fabricated substrate 551, exposing the peeling layer 553 or the underlying film 185. The second flexible substrate 111 is then bonded to it using the adhesive layer 187 (Figure 6(E)).

[0158] Finally, attach the FPC4505 to each electrode of the input / output terminal section using an anisotropic conductive material. If necessary, IC chips or similar components may be mounted on the device.

[0159] Based on the above, the light-emitting device shown in Figure 4 can be manufactured.

[0160] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0161] (Embodiment 3) In this embodiment, a light-emitting device according to one aspect of the present invention will be described with reference to Figures 7 to 9.

[0162] <Example of Light-Emitting Device Configuration 4> Figure 7 is a schematic cross-sectional view of the light-emitting device 400 illustrated in this embodiment.

[0163] The light-emitting device 400 includes an element layer 420 which includes a light-emitting element 410 provided on a substrate 401, and A first protective layer 411 covering the sublayer 420, and a second protective layer provided on the first protective layer 411 It has a layer 412.

[0164] The substrate 401 is flexible, and the light-emitting element 410 is formed on the insulating surface of the substrate 401. .

[0165] The light-emitting element 410 has a first electrode 403, an EL layer 405, and a second electrode 407 on the substrate 401. It is a laminate with layers stacked in order. The EL layer 405 contains at least a luminescent organic compound. Furthermore, at least one of the first electrode 403 and the second electrode 407 is from the EL layer 405. It is transparent to light emission. The first electrode 403 and the second electrode 4 sandwich the EL layer 405. By applying a voltage between 07, the light-emitting element 410 can be made to emit light.

[0166] Here, the layer containing the light-emitting element 410 is referred to as the element layer 420. Further examples will be provided in later embodiments. As such, the element layer 420 includes at least the light-emitting element 410, and the other components It may include elements (such as transistors and wiring).

[0167] The first protective layer 411 is a layer for protecting the element layer 420, and covers the element layer 420. The first protective layer 411 has a thickness of 0.1 μm or more and less than 100 μm.

[0168] Here, in the region overlapping with the element layer 420 and the region where the element layer 420 is not provided, the first retain The thickness of the protective layer 411 may vary. Also, if the upper surface of the element layer 420 is not flat, Similarly, the thickness of the first protective layer 411 is not constant. The thickness of its thinnest point must be within the aforementioned thickness range.

[0169] The second protective layer 412 is provided on the first protective layer 411. The hardness of at least the surface not facing the element layer 420 is greater than that of the surface of the first protective layer 411. hard.

[0170] The hardness of the surface of the second protective layer 412 that does not face the element layer 420 is, for example, ISO 15 In the Pencil Test (pencil hardness test) specified in 184, a hardness of H or higher is preferred. It is preferable that the hardness be 2H or higher, more preferably 3H or higher.

[0171] Furthermore, when using the pencil hardness test as the method for evaluating hardness, the element layer of the second protective layer 412 When the hardness of the surface not facing 420 and the hardness of the first protective layer 411 are determined to be at the same level: This refers to other hardness measures (for example, Vickers hardness). Comparisons can be made using methods such as Knoop hardness. .

[0172] Here, the surface of the first protective layer 411 is not facing the element layer 420 of the second protective layer 412. Because it is softer than the surface, if mechanical pressure is applied locally from the second protective layer 412 side... Furthermore, when the light-emitting device 400 is bent, the stress on the element layer 420 can be relieved. Here, if the first protective layer 411 is thinner than 0.1 μm, the stress is relieved. Without breaking, the light-emitting element 410 (or transistors, wiring, etc.) that make up the element layer 420 breaks There is a risk of damage. On the other hand, if the first protective layer 411 is 100 μm or thicker, the light-emitting device The flexibility of the 400 is compromised, or the light-emitting device 400 curls up. There is fear.

[0173] Thus, because the first protective layer 411 is formed to be sufficiently thin, the element layer 420 does not react to the protective layer. While mitigating the force, the light-emitting device 400 as a whole can be given high flexibility. Furthermore, even if the first protective layer 411 is formed so thinly, it is provided on the outermost surface of the light-emitting device. A hard second protective layer 412, which is located on a surface that does not face at least the element layer 420, protects the exterior. The elements such as the light-emitting element 410 that make up the element layer 420 are destroyed by mechanical pressure. Light-emitting device 40 that suppresses deformation and possesses high flexibility and high mechanical strength It is possible to achieve 0.

[0174] Furthermore, the configuration includes providing another protective layer between the first protective layer 411 and the second protective layer 412. Alternatively, an organic resin may be used as the first protective layer 411, and a thin layer may be applied on the first protective layer 411. A film is provided, and a second protective layer 4 is applied to the surface of the film that does not face the element layer 420. 12 may be configured to form an inorganic insulating film. First protective layer 411 and second protective layer By providing another protective layer between 412, the mechanical strength of the light-emitting device 400 can be further improved. It is possible.

[0175] <Example of Light-Emitting Device Configuration 5> Furthermore, a third protective layer is placed below the element layer 420, which includes the light-emitting element 410, instead of the substrate 401. A configuration that includes a fourth protective layer is also possible.

[0176] The light-emitting device 450 shown in Figure 8 has a configuration below the element layer 420 that is the same as the light-emitting device exemplified in Configuration Example 4. It differs from device 400.

[0177] The light-emitting device 450 has an element layer 420 provided on an insulating layer 409, and elements are transmitted via the insulating layer 409. A third protective layer 413 is provided below the sublayer 420, and below the third protective layer 413 A fourth protective layer 414 is provided.

[0178] The third protective layer 413 has a thickness of 0.1 μm or more and less than 100 μm. Also, the fourth The hardness of at least its lower surface (the surface not facing the element layer 420) of the protective layer 414 is third It is harder than the surface of protective layer 413.

[0179] The hardness of the lower surface of the fourth protective layer 414 is preferably H or higher in a pencil hardness test, for example. It is preferable that the material has a hardness of 2H or higher, and more preferably 3H or higher.

[0180] Thus, the element layer 420 is a laminate including the first protective layer 411 and the second protective layer 412, and By sandwiching it between a laminate including a third protective layer 413 and a fourth protective layer 414, Furthermore, the elements constituting the element layer 420 are not damaged by pressure from any side of the light-emitting device 450. Because damage can be suppressed, it is possible to realize a highly reliable light-emitting device with improved mechanical strength.

[0181] Here, if the third protective layer 413 is made of the same material as the first protective layer 411, It is preferable because the materials used during manufacturing can be standardized. Similarly, the fourth protective layer 414 is the second It is preferable that the protective layer 412 be made of the same material.

[0182] The thicknesses of the first protective layer 411 and the third protective layer 413 may be different. In particular, the first protective layer 411 needs to be thick enough to cover at least the element layer 420. Therefore, it may be thicker than the third protective layer 413.

[0183] Furthermore, between the third protective layer 413 and the fourth protective layer 414, there is another protective layer as illustrated in Configuration Example 4. A protective layer may be provided to improve the mechanical strength of the light-emitting device 450.

[0184] <Example of Light-Emitting Device Configuration 6> Here, the outermost surface of the second protective layer 412 and the fourth protective layer 414 is made of a material that exhibits photocatalytic activity. A configuration with a fifth protective layer may also be provided. In particular, the fifth protective layer may be provided on the light extraction side. It is preferable.

[0185] The light-emitting device 460 shown in Figure 9 is in contact with a surface of the second protective layer 412 that does not face the element layer 420. Furthermore, it differs from the light-emitting device 400 illustrated in Figure 7 in that a fifth protective layer 415 is provided. They are doing it.

[0186] The fifth protective layer 415 includes a material that exhibits photocatalytic activity. This material may be, for example, an acid. Examples include metal oxides such as titanium dioxide and zinc oxide.

[0187] The fifth protective layer 415 is formed by sputtering, sol-gel, spin-coating, dip, It can be formed using methods such as printing.

[0188] Due to the strong oxidation-reduction reaction of the fifth protective layer 415, It can decompose the mechanical material, preventing the surface of the light-emitting device 460 from becoming soiled with sebum and other substances. It can be controlled. In addition, the superhydrophilic effect of the fifth protective layer 415 prevents oily stains from adhering. This prevents dirt from being easily removed, for example, by simply exposing the surface of the light-emitting device 460 to running water. Yes, it is possible. As a result, it is not necessary to wipe away organic contaminants that have adhered to or fixed to the surface of the light-emitting device 460. This reduces the frequency of mechanical pressure being applied, and prevents scratches on the surface of the light-emitting device 460. This could result in damage to elements such as the light-emitting element 410 that constitutes the element layer 420, or other elements being destroyed. This can suppress the malfunction.

[0189] <Method for forming element layers> The following describes a method for forming an element layer containing a light-emitting element on a flexible insulating surface. This will be clarified. Furthermore, the description of the manufacturing method of the light-emitting device shown in other embodiments may also be considered.

[0190] The element layer includes at least a light-emitting element, and in addition to the light-emitting element, wiring that electrically connects to the light-emitting element. The circuit may also include elements such as transistors used to control the light emission of the light-emitting element.

[0191] Here, a support having an insulating surface on which the element layer is formed will be referred to as a substrate. For example, in configuration example 4 and configuration example 6, the substrate 401 corresponds to the base material. Also, in configuration example 5, The laminate of the protective layer 414, the third protective layer 413, and the insulating layer 409 corresponds to the substrate.

[0192] A method for forming an element layer on a substrate having a flexible insulating surface is to directly on the substrate A method for forming an element layer, and after forming an element layer on a support substrate having a different rigidity from the base material. There are two methods: one involves separating the element layer from the support substrate and transferring the element layer onto the substrate.

[0193] If the material constituting the base material has heat resistance to the heat generated during the device layer formation process, Forming the element layer directly on the substrate is preferable because it simplifies the process. In this case, the substrate is Forming the element layer while it is fixed to a support substrate facilitates transport within and between devices. This is preferable because it results in...

[0194] Furthermore, when using a method in which the element layer is formed on a support substrate and then transferred to the substrate, first support A release layer (shown in Embodiment 2) is placed on the substrate (corresponding to the fabricated substrate 501 shown in Embodiment 2, etc.) A separation layer (corresponding to the protective layer shown in Embodiment 2) and an insulating layer (corresponding to the protective layer shown in Embodiment 2) are laminated, and the insulating An element layer is formed on top of the layer. Next, the element layer is separated from the support substrate and transferred to the substrate. Delamination occurs at the interface between the support substrate and the release layer, at the interface between the release layer and the insulating layer, or within the release layer. You just need to choose the right materials.

[0195] For example, a release layer containing a high-melting-point metallic material such as tungsten, and an oxide of the said metallic material. Layers containing are laminated and used, with a silicon nitride layer or silicon oxynitride layer as an insulating layer on the release layer. It is preferable to use multiple stacked layers. When using a high melting point metal material, the element layer formation process This is preferable because it increases the degree of freedom.

[0196] Delamination can be caused by applying mechanical force, etching the delamination layer, or removing part of the delamination interface. This can also be done by dropping a liquid onto the surface and allowing it to penetrate the entire separation interface. Alternatively, thermal expansion may be used. Delamination can also be performed by applying heat to the delamination interface, taking advantage of the difference in the ratio.

[0197] Furthermore, as illustrated in later embodiments, a color filter or the like is placed on a flexible substrate. The same method can be applied when forming it.

[0198] Furthermore, when bonding a substrate on which an element layer is formed with a substrate on which a color filter is formed It is preferable to use a curable material as the first protective layer 411 to bond these together. Alternatively, in the region outside the area where the first protective layer 411 is provided, a curable material is used. You just need to glue them together.

[0199] Furthermore, the support substrate on which the element layer is formed and the support substrate on which the color filter is formed are prepared in advance. After bonding, the element layer and the support substrate, and the color filter and the support substrate are separated respectively. It may be peeled off. The element layer and color filter are bonded together with their respective layers formed on the support substrate. By performing alignment, the accuracy of the bonded position can be improved.

[0200] <Materials and Formation Method> The following describes the materials that can be used for each of the elements mentioned above, and the methods for forming them. Regarding the configuration illustrated in Embodiment 1, a detailed explanation will be omitted. Each component of the light-emitting device can be used in similar components as illustrated in other embodiments. The available materials can also be used.

[0201] [substrate] As the substrate 401, an organic resin or a glass material of a certain thickness that is flexible can be used. This is possible. The light-emitting device can be configured with a bottom emission structure or a dual emission structure. In this case, a material that is transparent to light emitted from the EL layer 405 is used for the substrate 401.

[0202] Here, in particular, in the case of a light-emitting device with a top emission structure, the substrate 401 is made of metal or Using a conductive substrate containing an alloy material provides protection against heat generation from the light-emitting element that is formed later. This is preferable because it improves heat dissipation.

[0203] Furthermore, insulating treatment is performed by oxidizing the surface of the conductive substrate or forming an insulating film on the surface. It is preferable to use a substrate that has been treated. For example, electrodeposition, spin coating, or dip coating. Which coating method, printing method such as screen printing, deposition method such as vapor deposition and sputtering, etc. An insulating film may be formed on the surface of a conductive substrate using the method described above, or it may be left in an oxygen atmosphere or The surface of substrate 401 can be oxidized by various methods such as heating or anodizing. stomach.

[0204] Furthermore, if the surface of the substrate 401 has an uneven shape, the uneven shape is covered and flattened. A planarization layer may be provided to form the edge surface. An insulating material may be used as the planarization layer. It can be formed from organic or inorganic materials. For example, the planarization layer is made of Deposition methods such as puttering, coating methods such as spin coating and dip coating, inkjet Formed using extrusion methods such as the t-process and dispensing method, printing methods such as screen printing, etc. It is possible.

[0205] [Light-emitting element] The light-emitting element 410 can be configured in the same way as the organic EL element 107 shown in Embodiment 1. .

[0206] [First protective layer, third protective layer] The first and third protective layers are photocurable organic resins or two-component curable resins. Curable materials such as thermosetting organic resins or gels can be used. For example, POXy resins, acrylic resins, silicone resins, phenolic resins, polyimides, polyvinyl Chloride (PVC), polyvinyl butyral (PVB), ethylene vinyl acetate (E) Materials such as VA can be used. In particular, materials with low moisture permeability, such as epoxy resin, are preferred. .

[0207] Furthermore, the first protective layer 411 and the third protective layer 413 may contain a desiccant. For example, chemiadsorption occurs with alkaline earth metal oxides (such as calcium oxide and barium oxide). A substance that adsorbs moisture can be used. Other desiccants include zeolite. A substance that adsorbs moisture by physical adsorption, such as silica gel, may also be used. When applied to a lighting device, granular desiccant is provided, and the desiccant absorbs the light-emitting element. Because the light emitted from sub-410 is diffusely reflected, it is highly reliable and has improved field-angle dependence. This makes it possible to realize optical devices.

[0208] [Second protective layer, fourth protective layer] The second and fourth protective layers are, for example, used on the flexible substrate shown in Embodiment 1. You can use materials that are available.

[0209] Furthermore, a material consisting of multiple layers can also be used as the second and fourth protective layers. It is possible. For example, a material made by laminating two or more layers made of organic resin, a layer made of organic resin and an inorganic resin. Materials made by laminating layers of materials, materials made by laminating two or more layers of inorganic materials, etc. When using multiple layers stacked together, the layer placed on the side not facing the light-emitting element 410 is used. The material used is one whose hardness is at least harder than that of the first or third protective layer. Select. Also, by providing a layer made of inorganic material, moisture and other substances can be prevented from entering the inside of the light-emitting device. Because the input is suppressed, the reliability of the light-emitting device can be improved.

[0210] The inorganic materials mentioned above include oxide materials, nitride materials, and oxynitriding materials of metals and semiconductors. It is possible. For example, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide Aluminum nitride, aluminum oxynitride, etc., can be used.

[0211] For example, when laminating a layer made of organic resin and a layer made of inorganic material, the layer made of organic resin The above inorganic material is applied to the upper or lower layer by sputtering, CVD, or coating methods. It is possible to form layers.

[0212] Furthermore, as the second and fourth protective layers, glass thin enough to be flexible is used. This is also acceptable. In particular, the organic resin layer, adhesive layer, and glass layer are laminated from the side closest to the light-emitting element 410. It is preferable to use a sheet. The thickness of the glass layer should be 20 μm or more and 200 μm or less. The thickness is preferably 25 μm or more and 100 μm or less. This allows for the simultaneous achievement of high barrier properties against water and oxygen, as well as flexibility. Furthermore, the thickness of the organic resin layer... The particle size should be between 10 μm and 200 μm, preferably between 20 μm and 50 μm. By placing such an organic resin layer in contact with the glass layer, cracks and fractures in the glass layer can be prevented. This can suppress the growth and improve mechanical strength. By applying the composite material to the second or fourth protective layer, it is extremely reliable and This allows for the creation of a flexible light-emitting device.

[0213] This embodiment may be implemented in appropriate combination with other embodiments described herein. It is possible.

[0214] (Embodiment 4) In this embodiment, as a more specific example of a light-emitting device according to one aspect of the present invention, the configuration of a display device is described. An example will be explained. Note that explanations of parts that overlap with the above embodiment will be omitted. Or, I'll explain it in a simplified way.

[0215] <Example of Light-Emitting Device Configuration 7> This configuration example describes a display device with a top emission structure.

[0216] Figure 10(A) is a schematic top view of the display device 270 illustrated in this configuration example.

[0217] The display device 270 has a display unit 271 on the upper surface of the third protective layer 413 on the fourth protective layer 414. It also has a scan line drive circuit 272 and a signal line drive circuit 273. Furthermore, it covers the display unit 271. A first protective layer 411 and a second protective layer 412 are provided on the first protective layer 411. Furthermore, the scan line drive circuit 272 and the signal line drive circuit 273 are connected to the third protective layer 413. An external connection terminal 274 is provided for direct connection, and is electrically connected to the external connection terminal 274. The FPC275 drives the scan line drive circuit 272, the signal line drive circuit 273, etc. External signals such as source potential and drive signals can be input.

[0218] Figure 10(B) includes an external connection terminal 274, a scan line drive circuit 272, and a display unit 271. This is a schematic cross-sectional view of the region at the cutting lines IJ and KL in Figure 10(A).

[0219] An insulating layer 409 is provided on the third protective layer 413, and a light-emitting element 410 and Element layer 420 including scan line drive circuit 272 (and signal line drive circuit 273), and external connections A terminal 274 is provided.

[0220] External connection terminal 274 is connected to a conductive layer that constitutes a transistor or light-emitting element in the display device 270. It consists of the conductive layer and electrodes (source) that constitute the gate of the transistor. Multiple conductive layers (electrodes or drain electrodes) are stacked and used. It is preferable to stack these to form the external connection terminal 274 because this increases its strength. Furthermore, a connector 276 is provided in contact with the external connection terminal 274, and F is connected via the connector 276. PC275 and external connection terminal 274 are electrically connected. The connection body 276 is heat A paste-like or sheet-like material made by mixing metal particles with a curable resin is used for heat-pressing. Therefore, materials exhibiting anisotropic conductivity can be used. As for metal particles, for example, nickel Using particles in which two or more metals are layered, such as Kell particles coated with gold. preferable.

[0221] Figure 10(B) shows the scan line driving circuit 272, which consists of n-channel type transistors 2 This example shows an NMOS circuit combining transistor 11 and transistor 212. The scan line driving circuit 272 is not limited to NMOS circuits, but also includes n-channel transistors and p-channel transistors. Various CMOS circuits combining Nell-type transistors, and p-channel type transistors A configuration having a PMOS circuit with a combination of TAs may also be used. Note that the signal line drive circuit 273 The same applies to this as well. In addition, in this configuration example, the display unit 271 is formed on the insulating surface. This shows a driver-integrated configuration in which a signal line drive circuit 272 and a signal line drive circuit 273 are formed. However, separate from the insulating surface on which the display unit 271 is formed, there is a scan line drive circuit 272 and a signal line drive circuit The configuration may also include one or both of the 273s.

[0222] Figure 10(B) shows a cross-sectional structure of one pixel as an example of the display unit 271. Pixel This includes a switching transistor 213, a current control transistor 214, and current The electrodes (source electrode or drain electrode) of the control transistor 214 are electrically connected. It includes a first electrode 403. Furthermore, an insulating layer 219 is provided covering the end of the first electrode 403. It is being done.

[0223] Furthermore, the transistors that make up the display unit 271, the scan line drive circuit 272, and the signal line drive circuit 273 The structure of the sta is not particularly limited.

[0224] The light-emitting element 410 can be configured in the same way as in the above embodiment. The display illustrated in this example configuration Since the device 270 is a display device with a top emission structure, light is transmitted to the second electrode 407. A material with a specific properties is used, and a reflective material is used for the first electrode 403.

[0225] Here, the insulating layer 409 contains impurities contained in the third protective layer 413 and the fourth protective layer 414. It suppresses diffusion. Also, the insulating layer 216 in contact with the semiconductor layer of the transistor, insulating layer 218 is preferable to suppress the diffusion of impurities into the semiconductor layer. These insulating layers include, for example, For example, oxides or nitrides of semiconductors such as silicon or metals such as aluminum. It can be used. In addition, a laminated film of such inorganic insulating material, or an inorganic insulating material and organic A laminated film of insulating material may be used. In addition, the insulating layer 217 has surface irregularities caused by the transistor. It functions as a planarization film that reduces planarization.

[0226] Here, the layer containing the transistor and light-emitting element 410 corresponds to the element layer 420. In this example, the stacked layers from the top surface of the insulating layer 409 to the second electrode 407 are defined as the element layer 420.

[0227] An insulating layer 223 is provided on the surface of the second protective layer 412 facing the light-emitting element 410, and insulation Color on the surface of layer 223 facing the light-emitting element 410, at a position overlapping with the light-emitting element 410. A filter 221 is provided.

[0228] It is preferable to use a material that is impermeable to impurities such as water and oxygen for the insulating layer 223. The same material as the insulating layer 409 can be used for the edge layer 223.

[0229] Furthermore, a black matrix 222 is provided between adjacent color filters 221. It is. Furthermore, the black matrix 222 is located beyond the display unit 271, including the scan line drive circuit 272. It may be installed in an external area.

[0230] Furthermore, an overcoat is provided to cover the color filter 221 and the black matrix 222. This is also acceptable. The overcoat protects the color filter 221 and the black matrix 222. In addition, it suppresses the diffusion of impurities contained in these materials.

[0231] A first protective layer 411 is provided on the element layer 420, and an insulating layer 22 is provided on the first protective layer 411. A second protective layer 412 is provided via 3. With this configuration, the element layer 4 The device is designed to be less susceptible to damage from external mechanical pressure, making it a highly reliable display device. 270 has been achieved.

[0232] Furthermore, the element layer 420 is provided on the third protective layer 413 via an insulating layer 409, and the third A fourth protective layer 414 is provided on the surface of the protective layer 413 that does not face the element layer 420. Therefore, the mechanical strength of the back side of the display device 270 is increased.

[0233] Thus, because the first protective layer 411 is formed to be sufficiently thin, the element layer 420 does not react to the protective layer. While mitigating the force, the entire display device 270 can be given high flexibility. Furthermore, at least a hard surface portion that does not face the element layer 420 is provided on the outermost surface of the display device. Even if the first protective layer 411 is formed so thinly due to the protective layer 412, When the device 270 is bent, or when external mechanical pressure is applied, the element layer 420 This suppresses the destruction of constituent elements such as the light-emitting element 410, resulting in high flexibility. This makes it possible to create a display device 270 that is both durable and highly mechanically strong.

[0234] Furthermore, the element layer 420 is a laminate including a first protective layer 411 and a second protective layer 412, and the third By sandwiching the surface between a laminate containing a protective layer 413 and a fourth protective layer 414, The device 270 is designed to suppress the destruction of the elements constituting the element layer 420 against pressure from any side. Because it can be controlled, it is possible to realize a highly reliable display device with even greater mechanical strength.

[0235] <Example of Light-Emitting Device Configuration 8> This configuration example describes a display device with a bottom emission structure. Where there is overlap, the explanation will be omitted or simplified.

[0236] Figure 11 is a schematic cross-sectional view of the display device 250 illustrated in this configuration example.

[0237] The display device 250 has a color filter 2 on the side of the element layer 420 that is formed on the light-emitting element 410. It differs from the display device 270 illustrated in Configuration Example 7 in that it has 21.

[0238] In the light-emitting element 410, a translucent material is used for the first electrode 403, and the second electrode 407 A reflective material is used for this. Therefore, the light emitted from the EL layer 405 is reflected in the third protective layer 41. It is launched towards side 3.

[0239] In addition, a color film is placed on the insulating layer 218 covering the transistor, in a position that overlaps with the light-emitting element 410. A filter 221 is provided. Furthermore, an insulating layer 217 is provided covering the color filter 221. It's being kicked.

[0240] Here, insulating layer 217, insulating layer 218, insulating layer 216, insulating layer 409, third protective layer 41 3. and the fourth protective layer 414 are made of a material that is transparent to light emitted from the EL layer 405. Use this.

[0241] The display device illustrated in this embodiment combines high flexibility and high mechanical strength. It is a display device.

[0242] This embodiment may be implemented in appropriate combination with other embodiments described herein. It is possible.

[0243] (Embodiment 5) In this embodiment, as an example of a light-emitting device according to one aspect of the present invention, a lighting device to which a light-emitting element is applied is used. An example of the configuration will be explained with reference to the drawings. Note that the following may overlap with the above embodiment. For parts that are omitted or simplified in their explanation, the explanation will be omitted or simplified.

[0244] Figure 12(A) is a schematic top view of the lighting device 290 illustrated in this embodiment. Figure 12(B) is a schematic cross-sectional view obtained by cutting along the cutting line MN in Figure 12(A). Device 290 is a lighting device with a top-emission structure.

[0245] The lighting device 290 has an insulating layer on top of the third protective layer 413 formed on the fourth protective layer 414. A light-emitting element 410 is provided via 409. A first protective covering is also provided over the light-emitting element 410. A layer 411 and a second protective layer 412 are provided on the first protective layer 411. In the region on the protective layer 413 that does not overlap with the first protective layer 411 and the second protective layer 412, The extraction electrode 293 is electrically connected to the first electrode 403 of the light-emitting element 410, and the second electrode An extraction electrode 297 is provided that is electrically connected to electrode 407.

[0246] Here, the configuration including the light-emitting element 410 corresponds to the element layer 420.

[0247] The first protective layer 411 and the second protective layer 412 have light-transmitting properties to allow light to be emitted from the EL layer 405. Use materials that possess the following properties.

[0248] Figure 12(B) shows that extraction electrode 293 and extraction electrode 297 are formed on the same plane. Furthermore, an example is shown in which the first electrode 4 is composed of the same layer. A portion of 03 constitutes the extraction electrode 293.

[0249] The second electrode 407 has an insulating layer that covers the stepped portion of the first electrode 403 and the extraction electrode 297. It is provided so as to extend beyond 299 and contact the extraction electrode 297, and is electrically connected to it. ru.

[0250] Furthermore, the extraction electrodes 293 and 297 are coated with a different conductive film than the first electrode 403. They may be formed separately. For example, a conductive film thicker than the first electrode 403 may be formed, with light emission through the insulating layer. It may also be configured to be placed below element 410 (on the side of the third protective layer 413). Using a conductive film containing copper in the conductive film is preferable because it can enhance conductivity. Furthermore, the first electrode 403 is provided in contact with the upper surface of the extraction electrode 293 without the need for the insulating layer mentioned above. It may also be configured as such.

[0251] The insulating layer 299 prevents the second electrode 407 from short-circuiting with the first electrode 403. It is provided to cover the end of the electrode 403. Also, a second electrode is formed on the upper layer of the insulating layer 299. To ensure good coverage of pole 407, the radius of curvature is set at the upper or lower end of the insulating layer 299. It is preferable to give the insulating layer 299 a curved surface having a thickness of (0.2 μm to 3 μm). The materials include organic compounds such as negative-type or positive-type photosensitive resins, and acids. Inorganic compounds such as silicon dioxide and silicon oxynitride can be used.

[0252] Furthermore, as shown in Figures 12(A)(B), the second protective layer 412 faces the light-emitting element 410. On the non-existent surfaces, it is preferable that a lens-shaped uneven surface is formed. This uneven surface is the first At the interface between the protective layer 412 and the outside (air), total internal reflection of the light emitted from the light-emitting element 410 occurs. It is provided for the purpose of suppressing a decrease in light extraction efficiency. The second protective layer 412 is For example, a lens array, microlens array, or diffusion sheet, diffusion film, etc., can be used. It is also possible to do so. In particular, using a microlens array can efficiently improve light extraction efficiency. This allows for further improvement of the viewing angle dependence, enabling the realization of a lighting device with uniform luminous brightness.

[0253] Furthermore, a method for forming an uneven surface on the second protective layer 412 is photolithography. Methods such as the lithography method, nanoimprint method, and sandblasting method can be used as appropriate.

[0254] Here, the refractive index of the second protective layer 412 is greater than or equal to the refractive index of the first protective layer 411. This is preferable. In other words, the further the film is from the light-emitting element 410, the greater its refractive index. It is preferable to set it in this way. With this configuration, the entire interface of each layer Reflection is suppressed, and virtually all of the light emitted from the light-emitting element 410 can be extracted.

[0255] Thus, because the first protective layer 411 is formed to be sufficiently thin, the element layer 420 does not react to the protective layer. While mitigating the force, the lighting device 290 as a whole can be given high flexibility. Furthermore, a hard surface is provided on the outermost surface of the lighting device, which does not face the element layer 420. Even if the first protective layer 411 is formed so thinly due to the second protective layer 412, illumination When the device 290 is bent, or when external mechanical pressure is applied, the element layer 420 This suppresses the destruction of constituent elements such as the light-emitting element 410, resulting in high flexibility. This makes it possible to create a lighting device 290 that is both functional and highly mechanically strong.

[0256] Furthermore, the element layer 420 is a laminate including a first protective layer 411 and a second protective layer 412, and the third By sandwiching the light between a laminate containing a protective layer 413 and a fourth protective layer 414, The device 290 suppresses the destruction of the elements constituting the element layer 420 against pressure from any side. Because it can be controlled, it is possible to realize a highly reliable light-emitting device with even greater mechanical strength.

[0257] This embodiment may be implemented in appropriate combination with other embodiments described herein. It is possible.

[0258] (Embodiment 6) In this embodiment, a light-emitting device according to one aspect of the present invention will be described with reference to Figures 13 and 14. ru.

[0259] <Example of Light-Emitting Device Configuration 9> Figure 13 shows a schematic diagram of a light-emitting device according to one embodiment of the present invention. The light-emitting device shown in Figure 13 is a first substrate It has a first substrate 901 and a second substrate 902 facing the first substrate 901, and the first substrate 901 and the second substrate A light-emitting element 630 is provided between the plates 902. Between the first substrate 901 and the second substrate 902 It includes an adhesive layer 670. The terminal portion 4601 has two or more terminal electrodes on the third substrate 903. Furthermore, a portion of the third substrate 903 is sandwiched between the first substrate 901 and the second substrate 902.

[0260] The third substrate 903 has a low coefficient of thermal expansion of 10 ppm / K. Therefore, the terminal electrode 657a, When the FPC is pressed onto b, the heat applied to the anisotropic conductive film causes the third substrate 903 to deform. Therefore, to prevent cracks from forming in the resin and wiring in contact with the third substrate 903. This makes it possible to obtain a light-emitting device with fewer display defects.

[0261] Furthermore, in Figure 13, the third substrate 903 does not overlap with the light-emitting element 630. Therefore, the third substrate 903 can also be used with substrates that do not transmit visible light, offering a wide range of material choices.

[0262] Furthermore, the difference in thermal expansion coefficients between the first substrate 901 and the second substrate 902 is equal to the thermal expansion coefficient of each substrate. Since it is within 10%, even if heat is applied to the terminal electrodes, the substrate will not move in one direction. It won't bend.

[0263] An example of a material that can be used in a light-emitting device according to one embodiment of the present invention is described below. Detailed explanations of the configurations illustrated in the example are omitted. Light-emitting device of this embodiment Each component is made of a material that can be used for similar components as illustrated in the previous embodiment. The fee is also applicable.

[0264] [First substrate, second substrate, and third substrate] The first substrate 901, the second substrate 902, and the third substrate 903 are each provided with the same configuration as in Embodiment 1. The flexible substrate shown, and the same materials as the substrate, second protective layer, and fourth protective layer shown in Embodiment 3. The following can be used as the second substrate 902: glass substrate, quartz substrate, sapphire A substrate such as an earpiece, ceramic substrate, or metal substrate can be used.

[0265] In particular, the first substrate 901 and the third substrate 903 use substrates with a thermal expansion coefficient of 10 ppm / K or less. The first substrate 901 and the third substrate 903 are substrates that deform little even when heat is applied. Therefore, even when heat is applied to the first substrate 901 and the third substrate 903, the first substrate 901 and Furthermore, cracks are less likely to occur in the resin, wiring, or the substrate itself that are in contact with the third substrate 903.

[0266] [Terminal electrode] The terminal electrodes 657a and 657b can be formed from an electrically conductive material. For example, gold. It can be formed from materials such as semiconductors.

[0267] [Adhesive layer] The adhesive layer 670 is in contact with the second electrode 622. The second release layer 601b and the first substrate 901 are , fixed by adhesive layer 670. Adhesive layer 670 is the same as adhesive layer 1 shown in Embodiment 1. It can be formed using the same materials as 09. It can also be formed using materials soluble in water or solvents, or by light such as ultraviolet light. The second substrate 902 and the peeled layer 50 can be plasticized by injection as needed. An adhesive that allows for chemical or physical separation of 5 may be used.

[0268] [Organic EL element] The organic EL element in this embodiment has the same configuration as the organic EL element 107 shown in Embodiment 1. It can be applied.

[0269] <Example of Light-Emitting Device Configuration 10> Figure 14(A) shows a top view of a light-emitting device according to one embodiment of the present invention. Figure 14(B) is a top view of Figure 14(A). This is a cross-sectional view obtained by cutting along the cutting line PQ.

[0270] The light-emitting device shown in Figure 14(B) consists of a terminal section 4601, a pixel section 4602, and a signal line circuit section 460 It has 3. The terminal portion 4601 has terminal electrodes 657 on the third substrate 903. Pixel portion 46 02 consists of the first substrate 901 and the second substrate 902, which control the driving of the light-emitting element 630. It holds the transistor 650. Also, the signal line circuit section 4603 is on the first board 901 The transistor 652 is sandwiched between the second substrate 902.

[0271] Each pixel has a transistor 650 that controls the driving of the light-emitting element, and a to select the desired pixel. A transistor 652 is formed.

[0272] The transistor 650 has a gate electrode 606 formed on the insulating layer 603, and a gate electrode 6 A gate insulating layer 608 formed on 06, and a semiconductor layer formed on the gate insulating layer 608. 610 and source electrode 612a and drain electrode 612b formed on the semiconductor layer 610 It has a first insulating layer 614 and a second insulating layer It is covered by 616, and on the second insulating layer 616 there is the first electrode 618 and the first electrode A layer 620 (EL layer) containing an organic compound formed on 618, and a layer 62 containing an organic compound It has a second electrode 622 formed on 0.

[0273] The transistor 651, which controls the driving of the light-emitting element, has the same configuration as the transistor 650. However, the size of the transistor (e.g., L length and W length) and the connection of the transistors are also factors. These can be adjusted as needed for each transistor.

[0274] Furthermore, the light-emitting element 630 is separated by partition walls 624 to form pixels.

[0275] Regarding the partition wall 624, the first electrode 618, the first insulating layer 614, and the second insulating layer 61 The openings and other steps provided in 6 are provided to prevent the light-emitting element 630 from being disconnected. Therefore, the partition wall 624 has a forward tapered shape so that the film formed on its upper surface is not interrupted. It is preferable that it has this feature. Note that a forward taper shape means that the underlying layer has a gentle slope compared to other layers. This refers to a configuration where the thickness increases at a specific angle and then the materials make contact.

[0276] The pixel section 4602 and the signal line circuit section 4603 are made up of a first substrate 901 and a first organic layer 700a It also has a first buffer layer 604 and an insulating layer 603. Furthermore, a first peeling layer 601a It may have.

[0277] The second substrate 902 has a second organic layer 700b and a second buffer layer 662, and a passive base It has a passivation layer 663. A color filter 666 is in contact with the passivation layer 663. It also has a light-shielding film 664 and an overcoat 668 that covers them. If it does not interfere with the emission of light, the second substrate 902 may have a second peel layer 601b. .

[0278] The third substrate 903, which overlaps with the terminal portion 4601 of the light-emitting device, has a thermal expansion coefficient of 10 ppm / K. It is small. Therefore, when the FPC is crimped onto the terminal electrode 657, an anisotropic conductive film is added. The third substrate 903 is less likely to deform due to heat. Therefore, the resin and wiring in contact with the third substrate 903 are less likely to deform. This prevents the rack from being inserted. As a result, a light-emitting device with fewer display defects can be obtained. It is possible.

[0279] Furthermore, in the configuration shown in Figure 14(B), the third substrate 903 does not need to be provided in the pixel section 4602. Therefore, the third substrate 903 can be a substrate that does not transmit visible light.

[0280] Furthermore, the difference in thermal expansion coefficients between the first substrate 901 and the second substrate 902 is equal to the thermal expansion coefficient of each substrate. Since it is within 10%, even if heat is applied to the terminal electrode 657, it will not be in one direction. The circuit board will not warp.

[0281] The first release layer 601a and the second release layer 601b are made of the same material as the release layer shown in Embodiment 2. It can be used. Also, the first organic layer 700a and the second organic layer 700b are, The same material as the adhesive layer shown in Embodiment 2 can be used. Layer 604 and the second buffer layer 662 are similar to the protective layers shown in Embodiment 2. Materials can be used.

[0282] Other components include insulating layer 603, gate electrode 606, gate insulating layer 608, semiconductor layer 610, and saw The drain electrode 612a and the drain electrode 612b are each attached to the undercoat 12 shown in Embodiment 1. 1. Gate electrode 131, gate insulating film 133, semiconductor layer 135, conductive layer 137a and conductive It can be formed using the same material as layer 137b.

[0283] The first insulating layer 614 consists of the semiconductor layer 610, the source electrode 612a, and the drain electrode 612b. The first insulating layer 614 is formed on top of the insulating film 141 shown in Embodiment 1. It can be formed using materials.

[0284] The second insulating layer 616 is formed on the first insulating layer 614. It can be formed using the same material as the planarization layer 105 shown in Embodiment 1.

[0285] The partition wall 624 is provided to prevent an electrical short circuit between adjacent first electrodes 618. Furthermore, when a metal mask is used when forming the layer 620 containing organic compounds, the organic compounds between the light-emitting elements It also serves to divide the layer 620 containing the compound. The partition wall 624 is the partition shown in Embodiment 1. It can be formed using the same material as wall 161.

[0286] Passivation layer 663, light-shielding film 664, color filter 666, and overcoat 668 are the undercoat 185, black matrix 183, and ca shown in Embodiment 2, respectively. It can be formed using the same materials as the LAR filters 157 and 181 and the overcoat.

[0287] <Method for fabricating a light-emitting device 3> The method for fabricating the light-emitting device shown in Figure 14 will be explained using Figure 16. Detailed explanations of parts similar to those in state 2 will be omitted.

[0288] First, a first release layer 601a is formed on the fabricated substrate 501, and a layer to be released is placed on the first release layer 601a. Forms 505 (Figure 16(A)).

[0289] There are no particular limitations on the layer to be formed as the peelable layer 505. Here, as the peelable layer 505, A protective layer, terminal electrodes 657, transistors, light-emitting elements 630, etc., are formed.

[0290] Next, the peel-off layer 505 and the second substrate 902 are bonded together using the adhesive layer 670, and the first peel-off is performed. The layer to be peeled 505 is peeled off from the fabricated substrate 501 using layer 601a. Layer 505 is provided on the second substrate 902 side (Figure 16(B)). This involves pre-forming the necessary components, such as color filters.

[0291] Next, the first peel layer 601a or protective layer that has been peeled off from the fabricated substrate 501 is exposed. A first organic layer 700a is used on the peelable layer 505, and a third layer is placed so as to overlap with the terminal electrode 657. Glue board 903 in place (Figure 16(C)).

[0292] Next, the first substrate 901 is attached to the first organic layer 700a so as not to overlap with the terminal electrode 657. Attach it (Figure 16(D)).

[0293] As described above, the peelable layer 505 on which the transistor and light-emitting element 630 are formed is attached to the first substrate 9 It can be created on 01.

[0294] Finally, attach the FPC4605 to each electrode of the terminal electrode 657 using an anisotropic conductive material. If available, you may mount IC chips or similar components on it.

[0295] Based on the above, the light-emitting device shown in Figure 14 can be manufactured.

[0296] <Example of Light-Emitting Device Configuration 11> Regarding the configuration of the terminal section 4601 in a light-emitting device according to one aspect of the present invention, an example of the configuration of the light-emitting device. A configuration different from that of 10 is shown in Figure 15.

[0297] Note that the same reference numerals are used for the same parts as in the light-emitting device shown in Embodiment 1 above, and their descriptions are as follows: (This part is omitted.)

[0298] The terminal electrode 657 overlaps with the first substrate 901, which has a low coefficient of thermal expansion. Therefore, the terminal electrode Even when heat is applied to 657, the first substrate 901 is not easily deformed by the heat, therefore the first substrate 901 Cracks are less likely to occur in the resin and wiring that come into contact with it.

[0299] With the above configuration, even if heat is applied to the terminal electrode 657, the first substrate 901 does not change due to heating. Due to the limited shape, cracks can form in the resin or wiring in contact with the first substrate 901, or in the first substrate itself. This makes it less likely to occur. As a result, a light-emitting device without display defects can be obtained.

[0300] This embodiment can be freely combined with other embodiments.

[0301] (Embodiment 7) In this embodiment, an example of a light-emitting element applicable to one aspect of the present invention is shown in Figure 17. explain.

[0302] The light-emitting element illustrated in this embodiment comprises a pair of electrodes (a first electrode and a second electrode), and the same It has an EL layer provided between a pair of electrodes. One of the pair of electrodes is the anode and the other is the cathode. It functions as such. The EL layer has at least an emissive layer.

[0303] The light-emitting element shown in Figure 17(A) has an EL layer 2 between the first electrode 201 and the second electrode 205. It has 03. In this embodiment, the first electrode 201 functions as the anode, and the second electrode 2 O5 functions as the cathode.

[0304] A voltage higher than the threshold voltage of the light-emitting element is applied between the first electrode 201 and the second electrode 205. Then, holes are injected into the EL layer 203 from the first electrode 201 side, and from the second electrode 205 side. Electrons are injected. The injected electrons and holes recombine in the EL layer 203, and in the EL layer 20 The light-emitting substance contained in 3 emits light.

[0305] The EL layer 203 has at least an emissive layer. The EL layer 203 also has layers other than the emissive layer, Materials with high hole injection potential, materials with high hole transport potential, hole blocking materials, materials with high electron transport potential Substances with high electron injection properties, or bipolar substances (substances with high electron transport and hole transport properties) It may further have a layer containing substances such as [materials].

[0306] The EL layer 203 can use either low-molecular-weight compounds or high-molecular-weight compounds, and inorganic It may contain compounds.

[0307] A specific example of the EL layer 203 configuration is shown in Figure 17(B). EL layer 20 shown in Figure 17(B) In 3, the hole injection layer 301, hole transport layer 302, light-emitting layer 303, electron transport layer 304 and The sub-injection layers 305 are stacked in this order, starting from the first electrode 201 side.

[0308] The light-emitting element shown in Figure 17(C) has an EL layer 2 between the first electrode 201 and the second electrode 205. It has 03, and further has an intermediate layer 207 between the EL layer 203 and the second electrode 205. .

[0309] A specific example of the intermediate layer 207 is shown in Figure 17(D). The intermediate layer 207 is a charge generation region. It has at least 308. The intermediate layer 207 is a layer other than the charge generation region 308, and electron The system may further include a relay layer 307 and an electron injection buffer layer 306.

[0310] A voltage higher than the threshold voltage of the light-emitting element is applied between the first electrode 201 and the second electrode 205. Then, holes and electrons are generated in the charge generation region 308, and the holes move to the second electrode 205. As the electrons move, they move to the electron relay layer 307. The electron relay layer 307 has high electron transport properties. The electrons generated in the charge generation region 308 are quickly transferred to the electron injection buffer layer 306. The electron injection buffer layer 306 mitigates the barrier to injecting electrons into the EL layer 203, and the EL layer 203 This increases the efficiency of electron injection into the electron relay. Therefore, electrons generated in the charge generation region 308 are used in the electron relay. The electrons are injected into the LUMO level of the EL layer 203 via layer 307 and the electron injection buffer layer 306. ru.

[0311] Furthermore, the electron relay layer 307 is composed of a material that constitutes the charge generation region 308 and an electron injection buffer. The materials constituting layer 306 react at the interface, and interactions such as impairing each other's functions occur. It can be prevented.

[0312] As shown in Figure 17(E)(F), the first electrode 201 and the second electrode 205 Multiple EL layers may be stacked in between. In this case, there may be intermediate layers between the stacked EL layers. It is preferable to provide layer 207. For example, the light-emitting element shown in Figure 17(E) is a first EL An intermediate layer 207 is provided between layer 203a and the second EL layer 203b. Also, Figure 17(F The light-emitting element shown has n EL layers (where n is a natural number greater than or equal to 2), and between each EL layer there is a middle layer. It has an intermediate layer 207.

[0313] Electrical in the intermediate layer 207 provided between EL layer 203(m) and EL layer 203(m+1) The behavior of electrons and holes will be explained. Between the first electrode 201 and the second electrode 205, an electron emitter When a voltage higher than the threshold voltage is applied, holes and electrons are generated in the intermediate layer 207, The pore moves to the EL layer 203(m+1) located on the second electrode 205 side, and the electron moves to the first electrode It moves to the EL layer 203(m) located on the pole 201 side. It is injected into the EL layer 203(m+1). The holes are recombined with electrons injected from the second electrode 205 side, and the EL layer 203 ( The light-emitting material contained in m+1) emits light. Also, electrons injected into the EL layer 203(m) , it recombines with the holes injected from the first electrode 201 side and is contained in the EL layer 203(m) The light-emitting material emits light. Therefore, the holes and electrons generated in the intermediate layer 207 are, Light emission occurs in different EL layers.

[0314] Furthermore, when EL layers are placed in contact with each other, the same configuration as the intermediate layer is formed between them. The EL layers can be arranged in contact with each other. For example, a charge generation region can be formed on one side of the EL layer. If a layer is formed, an EL layer can be provided in contact with that surface.

[0315] Furthermore, by making the light-emitting color of each EL layer different, the entire light-emitting element can be desired Light emission of the color can be obtained. For example, in a light-emitting element having two EL layers, the first By making the emission color of the first EL layer and the emission color of the second EL layer complementary, the light-emitting element It is also possible to obtain a light-emitting element that emits white light as a whole. Note that complementary colors are those that are mixed. This refers to the relationship between colors that result in achromatic colors. In other words, it refers to the relationship between complementary colors obtained from light-emitting substances. By mixing the emitted light, white light emission can be obtained. Furthermore, it has three or more EL layers. The same applies to light-emitting elements.

[0316] Figures 17(A) through (F) can be used in combination with each other. For example, Figure 17( An intermediate layer 207 can also be provided between the second electrode 205 of F) and the EL layer 203(n). .

[0317] The following are examples of materials that can be used for each layer. Note that each layer is not limited to a single layer. It is not necessary to stack two or more layers.

[0318] <anode> The electrode that functions as the anode (first electrode 201) is made of a conductive metal, alloy, or conductive material. Compounds can be formed using one or more types of materials. In particular, a large work function (4.0 It is preferable to use a material with an eV of 1 or higher. For example, a material containing ITO, silicon, or silicon oxide. It contains indium tin oxide, indium zinc oxide, tungsten oxide, and zinc oxide. It contained indium oxide, graphene, gold, platinum, nickel, tungsten, chromium, molybdenum. Butene, iron, cobalt, copper, palladium, or nitrides of metallic materials (e.g., titanium nitride) These are some examples.

[0319] Furthermore, when the anode is in contact with the charge generation region, various conductive properties are considered without regard to the magnitude of the work function. Materials can be used, such as aluminum, silver, and aluminum-containing alloys. It is possible to be there.

[0320] <cathode> The electrode that functions as the cathode (second electrode 205) is made of a conductive metal, alloy, or conductive material. It can be formed using one or more types of composite materials. In particular, the work function is small (3. It is preferable to use materials with a voltage of 8 eV or less. For example, materials belonging to Group 1 or Group 2 of the periodic table. Elements that do this (for example, alkali metals such as lithium and cesium, calcium, strontium) Alkaline earth metals such as magnesium, etc., and alloys containing these elements (for example, Mg-Ag Rare earth metals such as Al-Li, europium, and ytterbium, and these rare earth metals Aluminum alloys, aluminum, silver, etc., can be used.

[0321] Furthermore, when the cathode is in contact with the charge generation region, various conductive properties are considered without regard to the magnitude of the work function. Materials containing silicon or silicon oxide can be used. For example, indium containing ITO, silicon or silicon oxide. Tin oxides and the like can also be used.

[0322] A light-emitting element has either an anode or a cathode that is a conductive film that transmits visible light, and the other electrode that reflects visible light. The configuration may be such that the conductive film is transparent, or both the anode and cathode may be such that the conductive film is transparent to visible light. It can also be a certain configuration.

[0323] Examples of conductive films that transmit visible light include indium oxide, ITO, and indium zinc oxide. It can be formed using zinc oxide, zinc oxide with added gallium, etc. Also, gold, Silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt Metal materials such as copper, palladium, or titanium, alloys containing these metal materials, or Nitrides of metal materials (for example, titanium nitride) can also be formed to a degree that allows light to pass through. It can be used in the above applications. Furthermore, the laminated film of the above material can be used as a conductive layer. For example, using a multilayer film of a silver-magnesium alloy and ITO can improve conductivity. This is preferable because it allows for this. Alternatively, graphene or the like may be used.

[0324] Examples of conductive films that reflect visible light include aluminum, gold, platinum, silver, nickel, and tungsten. Metal materials such as tetracellulose, chromium, molybdenum, iron, cobalt, copper, or palladium, Alloys containing these metal materials can be used. In addition, Lantha It may also contain added elements such as cellulose, neodymium, or germanium. Aluminum alloys such as aluminum alloys, aluminum-nickel alloys, aluminum-neodymium alloys, etc. Alloys containing um (aluminum alloys), alloys of silver and copper, alloys of silver, palladium and copper, silver It can be formed using an alloy containing silver, such as a magnesium alloy. Gold is preferred because of its high heat resistance. Furthermore, the metal film or metal in contact with the aluminum alloy film. By laminating an oxide film, the oxidation of the aluminum alloy film can be suppressed. Examples of materials for films and metal oxide films include titanium and titanium oxide. A conductive film that transmits visible light and a film made of a metal material may be laminated. For example, silver and ITO Multilayer films, such as a silver-magnesium alloy and an ITO multilayer film, can be used.

[0325] The electrodes can be formed using methods such as vapor deposition or sputtering. Formed using extrusion methods such as the cuteting method, printing methods such as screen printing, or plating methods. It is possible.

[0326] Furthermore, a conductive oxide is formed by sputtering as a conductive film that transmits visible light. In this case, when the conductive oxide is formed in an atmosphere containing argon and oxygen, the light transmittance is It can be improved.

[0327] Furthermore, when forming a conductive oxide film on the EL layer, it contains argon with reduced oxygen concentration. A first conductive oxide film deposited under an atmosphere, and a film deposited under an atmosphere containing argon and oxygen. If a second conductive oxide film is used as a laminated film, the film deposition damage to the EL layer can be reduced. This is preferable because it allows for this. In particular, the argon gas used when forming the first conductive oxide film is preferable. The purity of the material is preferable, for example, a dew point of -70°C or lower, preferably -100°C or lower. It is preferable to use argon gas.

[0328] <Hole injection layer 301> The hole injection layer 301 is a layer containing a material with high hole injection properties.

[0329] Examples of materials with high hole injection potential include molybdenum oxide, vanadium oxide, and ruthenium oxide. Metal oxides such as um oxide, tungsten oxide, and manganese oxide, as well as phthalosia Phthalosyrastics such as nin (abbreviated as H2Pc) and copper(II) phthalocyanine (abbreviated as CuPc) Nin-based compounds can be used.

[0330] Also, poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenyl Polymer compounds such as poly(3,4-ethylenedioxide) (abbreviated as PVTPA), and poly(3,4-ethylenedioxide) Acids such as cythiophene / poly(styrene sulfonic acid) (PEDOT / PSS) are added. Polymer compounds can be used.

[0331] Furthermore, the hole injection layer 301 may also be used as a charge generation region. Hole injection layer 301 in contact with the anode If it is a charge generation region, various conductive materials can be used as the anode without considering the work function. This can be done. The materials that make up the charge generation region will be described later.

[0332] <Hole transport layer 302> The hole transport layer 302 is a layer containing a substance with high hole transport properties.

[0333] A material with high hole transport capabilities can be any material that has higher hole transport capabilities than electron transport capabilities, in particular , 10 -6 cm 2 It is preferable that the material has a hole mobility of / Vs or greater. For example, 4,4'-Bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NP) B or α-NPD), 4-phenyl-4'-(9-phenylfluoren-9-yl)tri Aromatic amine compounds such as phenylamine (abbreviation: BPAFLP), 4,4'-di(N- Rubazolyl)biphenyl (abbreviation: CBP), 9-[4-(10-phenyl-9-anthracite) [Cenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 9-phenyl-3-[4 -(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: P) Carbazole derivatives such as CzPA, 2-tert-butyl-9,10-di(2-naphthyl (Lu)anthracene (abbreviation: t-BuDNA), 9,10-di(2-naphthyl)anthracene Aromatic compounds such as 2,0-2,0-diphenylanthracene (DPAnth) Various compounds are used, such as aromatic hydrocarbon compounds and polymer compounds like PVK and PVTPA. It is possible.

[0334] <Luminous layer 303> The light-emitting layer 303 uses fluorescent compounds that emit fluorescence or phosphorescent compounds that emit phosphorescence. It is possible.

[0335] Examples of fluorescent compounds that can be used in the light-emitting layer 303 include N,N'-bis[4 -(9H-carbazole-9-yl)phenyl]-N,N'-diphenylstilbene-4 ,4'-diamine (abbreviation: YGA2S), N-(9,10-diphenyl-2-anthryl) )-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCAPA), Examples include Bren.

[0336] Furthermore, examples of phosphorescent compounds that can be used in the light-emitting layer 303 include bis[2-( 4',6'-Difluorophenyl)pyridinate-N,C 2’ Iridium (III) pico Linert (abbreviation: Firpic), Tris(2-phenylpyridinato-N,C) 2’ ) Iri Dium(III) (abbreviation: Ir(ppy)3), (acetylacetonato)bis(3,5- Dimethyl-2-phenylpyradinate) Iridium(III) (Abbreviation: Ir(mppr-M) e) Examples include organometallic complexes such as 2(acac)).

[0337] Furthermore, the light-emitting layer 303 contains the above-mentioned light-emitting organic compound (light-emitting substance, guest material) and other materials. A configuration in which the host material is dispersed is also possible. Various materials can be used as the host material. It can be present, has a lower than the guest material's lowest orbital level (LUMO level), and is the highest occupied. It is preferable to use materials with low orbital levels (HOMO levels).

[0338] By dispersing the guest material in the host material, crystallization of the light-emitting layer 303 is suppressed. It can be controlled. Furthermore, it can suppress concentration quenching caused by high concentrations of guest materials. It is possible.

[0339] As host materials, the above-mentioned substances with high hole transport capabilities (for example, aromatic amine compounds and calcium carbonate) (Bazole derivatives) or substances with high electron transport capabilities described later (for example, quinoline skeleton or benzox) Metal complexes having a noline skeleton, or having oxazole ligands or thiazole ligands Metal complexes can be used. Specifically, tris(8-quinolinolato)aluminium can be used. Um(III) (abbreviation: Alq), bis(2-methyl-8-quinolinolate)(4-pheni Metal complexes such as aluminium(III) (abbreviation: BAlq), 3-(4- Biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4- Triazole (abbreviation: TAZ), vasophenanthroline (abbreviation: BPhen), vasocu Heterocyclic compounds such as profine (abbreviated as BCP), as well as CzPA, DNA, t-BuDNA, Condensed aromatic compounds such as DPAnth, aromatic amine compounds such as NPB, etc. can be used. can.

[0340] Furthermore, multiple types of host materials can be used. For example, rubre can be used to suppress crystallization. Substances that suppress crystallization, such as ions, may be added. Also, energy to the guest material To make movement more efficient, NPB or Alq may be added.

[0341] Furthermore, by providing multiple light-emitting layers and making the light-emitting color of each layer different, the entire light-emitting element As a whole, it is possible to obtain light emission of a desired color. For example, a light-emitting element having two light-emitting layers In this configuration, the emission color of the first emission layer and the emission color of the second emission layer are made to be complementary colors. Therefore, it is also possible to obtain a light-emitting element that emits white light as a whole. The same applies to light-emitting elements that have three or more of these elements.

[0342] <Electron transport layer 304> The electron transport layer 304 is a layer containing a material with high electron transport properties.

[0343] For materials with high electron transport capabilities, any organic compound that has higher electron transport capabilities than hole transport capabilities will suffice. , especially 10 -6 cm 2 It is preferable that the material has an electron mobility of / Vs or higher.

[0344] Examples of materials with high electron transport capabilities include Alq, BAlq, etc., with a quinoline skeleton or ben Metal complexes having a zoquinoline skeleton, etc., and bis[2-(2-hydroxyphenyl)benzo Xazolato]zinc (abbreviation: Zn(BOX)2), bis[2-(2-hydroxyphenyl) Oxazoles such as benzothiazolat [zinc (abbreviation: Zn(BTZ)2)] and thiazoles Metal complexes with ligands can be used. Also, TAZ, BPhen, BC P can also be used.

[0345] <Electron injection layer 305> The electron injection layer 305 is a layer containing a material with high electron injection potential.

[0346] Examples of materials with high electron injection potential include lithium, cesium, calcium, and lithium fluoride. Alkali metals such as um, cesium fluoride, calcium fluoride, and lithium oxide, Potassium earth metals or compounds thereof can be used. Also, erbium fluoride can be used. Rare earth metal compounds can be used. Also, the electron transport layer 304 described above can be composed of It is also possible to use substances that can be used.

[0347] <Charge generation region> The charge generation region that constitutes the hole injection layer, and charge generation region 308, are made of a material with high hole transport properties. This region contains acceptor materials (electron acceptors). Acceptor materials are involved in hole transport. It is preferable that the substance with high efficacy is added in a mass ratio of 0.1 to 4.0. It's nice.

[0348] Furthermore, the charge generation region contains both a highly hole-transporting material and an acceptor material within the same film. This applies not only to cases where a layer containing a highly hole-transporting substance and a layer containing an acceptor substance are stacked together. Layers may be used. However, if the charge generation region is located on the cathode side, high hole transport is required. In a laminated structure where the layer containing the material is in contact with the cathode, and the charge generation region is located on the anode side. In this structure, a layer containing an acceptor material is in contact with the anode.

[0349] For materials with high hole transport capabilities, any organic compound that has higher hole transport capabilities than electron transport capabilities will suffice. , especially 10 -6 cm 2 It is preferable that the organic compound has a hole mobility of / Vs or higher. stomach.

[0350] Specifically, aromatic amine compounds such as NPB and BPAFLP, CBP, CzPA, and PCz Carbazole derivatives such as PA, t-BuDNA, DNA, DPaNth, and other aromatic carbonized waters. Polymer compounds such as elementary compounds, PVK, and PVTPA can be used in the hole transport layer 302. As an example of a suitable material, a material with high hole transport properties can be used.

[0351] Accepting substances include 7,7,8,8-tetracyano-2,3,5,6 Organic compounds such as fluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, and transition metals. Examples of oxides include oxides of metals belonging to groups 4 through 8 of the periodic table. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide. Den, tungsten oxide, manganese oxide, and rhenium oxide are preferred due to their high electron-accepting properties. In particular, molybdenum oxide is preferred because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle. It's nice.

[0352] <Electron injection buffer layer 306> The electron injection buffer layer 306 is a layer containing a material with high electron injection potential. The α layer 306 facilitates the injection of electrons from the charge generation region 308 into the EL layer 203. As a material with high electron injection potential, the aforementioned materials can be used. Also, electron injection buff The 'a' layer 306 may have a composition that includes the aforementioned electron-transporting material and donor material.

[0353] <Electronic relay layer 307> In the electron relay layer 307, the acceptor material was extracted in the charge generation region 308. Receive electrons quickly.

[0354] The electron relay layer 307 contains a material with high electron transport properties. By using phthalocyanine-based materials or metal complexes having a metal-oxygen bond and an aromatic ligand. This is preferable.

[0355] Specifically, the phthalocyanine-based materials include CuPc, PhO-VOPc (Vanad yl 2,9,16,23-tetraphenoxy-29H,31H-phthal Examples include ocyanine.

[0356] The metal complex having the metal-oxygen bond and aromatic ligand has a metal-oxygen double bond. It is preferable to use a metal complex. The metal-oxygen double bond has acceptor properties. Therefore, the movement (transfer) of electrons becomes easier.

[0357] Furthermore, metal complexes having a metal-oxygen bond and an aromatic ligand include phthalocyanine-based materials. A good ingredient is preferred.

[0358] Furthermore, among the phthalocyanine-based materials mentioned above, those having a phenoxy group are preferred. Specifically, phthalocyanine derivatives containing a phenoxy group, such as PhO-VOPc, are preferred. Phthalocyanine derivatives containing a phenoxy group are soluble in solvents, therefore, the luminescent element It is easy to handle when forming the film, and the equipment used for film deposition is easy to maintain. It has advantages.

[0359] The electron relay layer 307 may further contain the donor substance described above. By including a donor substance in 07, electron movement becomes easier, and the light-emitting element becomes more This makes it possible to operate it at a low voltage.

[0360] The LUMO levels of the electron-transporting material and the donor material are included in the charge generation region 308. The LUMO level of the acceptor material and the high electron transport properties contained in the electron transport layer 304 The LUMO level of the material (or the electron relay layer 307 or electron injection buffer layer 306) The LUMO level should be between the LUMO levels of the adjacent EL layer 203. It is preferable that the temperature be between eV and -3.0eV. Furthermore, a donor material is provided in the electron relay layer 307. When incorporating a substance, the accessory included in the charge generation region 308 is a material with high electron transport properties. It is possible to use materials that have a LUMO level higher than the acceptor level of the ptothermic material. ru.

[0361] The layers constituting the EL layer 203 and the intermediate layer 207 described above were each deposited using a vacuum deposition method. (Including vapor deposition), transfer, printing, inkjet and dispensing methods, It can be formed by coating methods such as the pin-coating method.

[0362] This embodiment can be freely combined with other embodiments.

[0363] (Embodiment 8) In this embodiment, the semiconductor layer of the transistor in the light-emitting device according to one aspect of the present invention is used This document describes oxide semiconductors that can perform certain functions.

[0364] As an oxide semiconductor used in the semiconductor layer of a transistor, at least indium (In) Alternatively, it is preferable to include zinc (Zn). In particular, it is preferable to include in and Zn. In addition to these, it is preferable to have a stabilizer that strongly binds oxygen. Examples of vilizers include gallium (Ga), tin (Sn), zirconium (Zr), and hafni. It may contain at least one of um (Hf) and aluminum (Al).

[0365] Also, other stabilizers include lanthanides such as lanthanum (La) and cerium ( Ce, praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), hol Mium (Ho), Erbium (Er), Thulium (Tm), Ytterbium (Yb), Lu It may contain one or more types of tecium (Lu).

[0366] For example, In-Sn-Ga-Zn oxides, In-Ga-Zn oxides, In-Sn-Z n-based oxides, In-Zr-Zn oxides, In-Al-Zn oxides, Sn-Ga-Zn oxide, Al-Ga-Zn oxide, Sn-Al-Zn oxide, or In-Hf-Zn oxide, In-La-Zn oxide, In-Ce-Zn oxide, In-Pr-Zn oxide, In-Nd-Zn oxide, In-Sm-Zn oxide, In-Eu-Zn oxide, In-Gd-Zn oxide, In-Tb-Zn oxide, In-Dy-Zn oxide, In-Ho-Zn oxide, In-Er-Zn oxide, In-Tm-Zn oxide , In-Yb-Zn oxide, In-Lu-Zn oxide, In-Zn oxide, Sn- Zn oxide, Al-Zn oxide, Zn-Mg oxide, Sn-Mg oxide, In- Mg oxide, In-Ga oxide, In oxide, Sn oxide, Zn oxide, etc. can be used.

[0367] Here, for example, the In-Ga-Zn oxide means an oxide mainly composed of In, Ga, and Zn, and the ratio of In, Ga, and Zn is not limited.

[0368] Also, as the oxide semiconductor, a material represented by InMO3(ZnO) m (m > 0) can be used. Here, M represents one metal element or a plurality of metal elements selected from Ga, Fe, Mn, and Co. Also, as the oxide semiconductor, a material represented by In2SnO5(ZnO) (n > 0) n can be used.

[0369] For example, In-Ga-Zn oxides with an atomic ratio of In:Ga:Zn = 3:1:2, In:Ga:Zn = 1:1:1, or In:Ga :Zn = 2:2:1, and oxides in the vicinity of their compositions can be used. Or, In:Sn:Zn = 1:1:1, In:Sn:Zn = 2:1 In-Sn-Zn oxides and their combinations with an atomic ratio of 3 or In:Sn:Zn = 2:1:5 It is best to use oxides from the vicinity of the compound.

[0370] For example, if the atomic ratio of In, Ga, and Zn is In:Ga:Zn=a:b:c(a+b+ The composition of an oxide with c=1 is such that the atomic ratio is In:Ga:Zn=A:B:C(A+B+C The composition of the oxide in the vicinity of (1) is such that a, b, and c are in the vicinity of the composition of the oxide in equation (a-A) 2 +(b-B) 2 +(c―C) 2 ≤r 2 This means satisfying the following condition. For example, r can be set to 0.05. The same applies to other oxides.

[0371] However, this is not limited to these, and includes the required semiconductor characteristics (field-effect mobility, threshold voltage, etc.). A suitable composition should be used depending on the requirements. Furthermore, in order to obtain the desired semiconductor properties, Carrier concentration, impurity concentration, defect density, atomic ratio of metal elements to oxygen, interatomic distance, density, etc. It is preferable to make it appropriate.

[0372] Furthermore, transistors using oxide semiconductors as semiconductor layers can be made by increasing the purity of the oxide semiconductors. As a result, the off current (here, when in the off state, for example, with respect to the source potential) The drain current (defined as the current when the potential difference with the gate potential is below the threshold voltage) is kept sufficiently low. This can be done. For example, to increase the purity of oxide semiconductors, hydrogen and hydroxyl groups are oxidized by heating and film formation. By preventing the material from being included in the semiconductor, or by removing it from the film by heating after film formation, the actual This can be achieved. By increasing the purity, an In-Ga-Zn oxide can be used in the channel region. With this transistor, the off-current per channel width is 1 × 10⁻¹⁶-24 A / μm (1yA / μ) m) to 1 × 10 -22 It is possible to achieve a value of approximately A / μm (100yA / μm).

[0373] The oxide semiconductor film may have, for example, a non-single crystal structure. The non-single crystal structure may be, for example, CAAC(C Axis-Aligned Crystal), polycrystalline, microcrystalline, and having amorphous regions. The amorphous region has a higher defect level density than the microcrystalline and CAAC regions. Also, the microcrystalline region has a higher defect level density than CAAC. Furthermore, the defect level density is high. Note that an oxide semiconductor containing CAAC is called CAAC-OS(C Axis Aligned Crystalline Oxide Semiconductor It is called a uctor.

[0374] The oxide semiconductor film may have, for example, CAAC-OS. CAAC-OS is, for example, The c-axis is oriented, and the a-axis and / or the b-axis are not aligned macroscopically.

[0375] The oxide semiconductor film may, for example, have microcrystals. These are called microcrystalline oxide semiconductors. Microcrystalline oxide semiconductor films are, for example, 1 nm to 10 nm in thickness. The film contains microcrystals (also called nanocrystals) of full size.

[0376] The oxide semiconductor film may have, for example, an amorphous region. This material is called an amorphous oxide semiconductor. An amorphous oxide semiconductor film, for example, has a disordered atomic arrangement. It does not have crystalline components. Alternatively, an amorphous oxide semiconductor film is, for example, completely amorphous. It does not have a crystalline portion.

[0377] Furthermore, the oxide semiconductor film is CAAC-OS, microcrystalline oxide semiconductor, amorphous oxide semiconductor. A mixed film may also be used. The mixed film may consist of, for example, regions of amorphous oxide semiconductor and microcrystalline oxide. It has a semiconductor region and a CAAC-OS region. Furthermore, the mixed film is, for example, amorphous. Layers of oxide semiconductor regions, microcrystalline oxide semiconductor regions, and CAAC-OS regions. It may have a structure.

[0378] The oxide semiconductor film may, for example, have a single crystal structure.

[0379] The oxide semiconductor film has multiple crystalline regions, and the c-axis of the crystalline region is aligned with the normal vector of the surface on which it is formed. Alternatively, it is preferable that they are aligned in a direction parallel to the surface normal vector. The orientations of the a-axis and b-axis may be different in between. Such an oxide semiconductor film One example of this is the CAAC-OS membrane.

[0380] The crystalline portion contained within the CAAC-OS film is small enough to fit within a cube with sides less than 100 nm in size. This is often the case. Also, transmission electron microscope (TEM) Observation images using an ectron microscope show that the CAAC-OS film contains The boundaries between crystalline regions are not clear. Furthermore, TEM revealed grains in the CAAC-OS film. A boundary (also called a grain boundary) cannot be confirmed. Therefore, the CAAC-OS membrane is The decrease in electron mobility caused by grain boundaries is suppressed.

[0381] The crystalline portion contained in the CAAC-OS film has a c-axis that is the normal vector to the surface on which the CAAC-OS film is formed. Aligned so as to be parallel to the normal vector of the surface or plane, and from a direction perpendicular to the ab plane. When viewed from a direction perpendicular to the c-axis, the metal atoms are arranged in a triangular or hexagonal shape, and the metal atoms are layered. The structure is such that metal atoms and oxygen atoms are arranged in layers. The orientations of the a-axis and b-axis may be different. In this specification, when simply referred to as vertical, This also includes the range of 80° to 100°, preferably 85° to 95°. Also, when simply describing something as parallel, it means -10° or more and 10° or less, preferably -5° or more and 5° or less. This will include the range below °.

[0382] Furthermore, the distribution of crystalline regions in the CAAC-OS film does not need to be uniform. For example, CAA In the formation process of a C-OS film, when crystal growth is performed from the surface side of the oxide semiconductor film, the shape The proportion of crystalline material may be higher near the surface compared to the vicinity of the surface formation.

[0383] The c-axis of the crystalline portion contained in the CAAC-OS film is the normal vector to the surface on which the CAAC-OS film is formed. The shape of the CAAC-OS film is aligned so as to be parallel to the normal vector of the film or surface. Depending on the cross-sectional shape of the surface to be formed or the surface itself, they may face in different directions. Furthermore, the crystalline portion is formed when the film is deposited, or when crystallization treatment such as heat treatment is performed after film deposition. It is formed at this time. Therefore, the c-axis of the crystalline portion is the same as when the CAAC-OS film is formed. They are aligned so as to be parallel to the normal vector of the forming surface or the normal vector of the surface.

[0384] Transistors using CAAC-OS film exhibit changes in electrical properties due to irradiation with visible light and ultraviolet light. Its value is small. Therefore, this transistor is highly reliable.

[0385] This embodiment can be freely combined with other embodiments.

[0386] (Embodiment 9) In this embodiment, the present invention relates to electronic devices and lighting devices to which a light-emitting device according to one aspect of the present invention is applied. This will be explained using Figure 18.

[0387] A light-emitting device according to one aspect of the present invention is flexible and, when a physical force is applied from the outside, The transistor and / or organic EL element are designed to be resistant to damage caused by bending or curving. It is a highly reliable light-emitting device. Therefore, by applying this light-emitting device, bending and curvature can be achieved. This makes it possible to create robust and reliable electronic devices.

[0388] Examples of electronic devices include television equipment (also known as televisions or television receivers). (u) Monitors for computers, digital cameras, digital video cameras, digital Photo frames, mobile phones (also called mobile phones or mobile phone devices), portable game consoles, portable Examples include mobile information terminals, sound playback devices, and large game machines such as pachinko machines.

[0389] Furthermore, a light-emitting device according to one aspect of the present invention can be used on the interior or exterior walls of houses and buildings, or inside automobiles. It can also be incorporated along the curved surfaces of the frame or exterior.

[0390] Figure 18(A) shows an example of a mobile phone. Mobile phone 7400 has a housing 7401 In addition to the display unit 7402 incorporated into it, there are also operation buttons 7403, an external connection port 7404, It is equipped with speaker 7405, microphone 7406, etc. Note that the mobile phone 7400 is It is manufactured by using an optical device in the display unit 7402.

[0391] The mobile phone 7400 shown in Figure 18(A) allows you to access information by touching the display unit 7402 with your finger or the like. You can enter information. You can also make phone calls or type text. The operation can be performed by touching the display unit 7402 with a finger or the like.

[0392] Furthermore, the operation button 7403 can be used to turn the power ON or OFF, and the display unit 7402 will display... You can switch the type of image displayed. For example, from the email composition screen, You can switch to the menu screen.

[0393] Here, the display unit 7402 incorporates a light-emitting device according to one aspect of the present invention. This allows for a mobile phone with a curved display and high reliability.

[0394] Figure 18(B) shows an example of a wristband-type portable display device. Portable display device 71 00 represents the housing 7101, the display unit 7102, the operation buttons 7103, and the transmitting / receiving device 7104. It is equipped with.

[0395] The portable display device 7100 is capable of receiving video signals by the transceiver 7104, and the received The video can be displayed on the display unit 7102. Additionally, the audio signal can be transmitted to other receiving devices. It is also possible to do so.

[0396] Additionally, the 7103 control button allows you to turn the power on and off, and switch the displayed image. Alternatively, you can adjust the volume of the sound, etc.

[0397] Here, the display unit 7102 incorporates a light-emitting device according to one aspect of the present invention. This allows for the creation of a highly reliable portable display device equipped with a curved display section.

[0398] Figures 18(C) to (E) show an example of a lighting device. Lighting device 7200, lighting device 7 210 and the lighting device 7220 each have a base 720 equipped with an operating switch 7203 It has 1 and a light-emitting part supported by a base portion 7201.

[0399] The lighting device 7200 shown in Figure 18(C) includes a light-emitting section 7202 having a wave-shaped light-emitting surface. Therefore, it is a lighting fixture with a highly aesthetic design.

[0400] The light-emitting section 7212 of the lighting device 7210 shown in Figure 18(D) has two convexly curved parts The light-emitting parts are arranged symmetrically. Therefore, the entire lighting system is centered around the lighting device 7210. It can illuminate directions.

[0401] The lighting device 7220 shown in Figure 18(E) includes a concavely curved light-emitting section 7222. Therefore, in order to concentrate the light emitted from the light-emitting unit 7222 onto the front of the lighting device 7220, It is suitable for brightly illuminating a wide area.

[0402] Furthermore, each of the light-emitting parts provided in the lighting device 7200, lighting device 7210, and lighting device 7220 Because it is flexible, the light-emitting part can be made of plastic material or a movable frame or other material. The light-emitting surface of the light-emitting part may be freely curved to suit the application, while remaining fixed in place.

[0403] In this example, we have shown a lighting device in which the light-emitting part is supported by a base, but the light-emitting part The enclosure can be fixed to the ceiling or suspended from the ceiling. Because the surface can be curved for use, the light-emitting surface can be curved into a concave shape to brighten a specific area. It can illuminate a room, or the light-emitting surface can be curved into a convex shape to brightly illuminate the entire room.

[0404] Here, each light-emitting section incorporates a light-emitting device according to one embodiment of the present invention. Therefore, This allows for a highly reliable lighting device with a curved light-emitting surface.

[0405] Figure 19(A) shows an example of a portable display device. The display device 7300 is housed in a casing 7 301, display unit 7302, operation button 7303, pull-out member 7304, control unit 7305 It is equipped with.

[0406] The display device 7300 has a flexible display unit wound in a roll inside a cylindrical housing 7301. It is equipped with 7102.

[0407] Furthermore, the display device 7300 can receive video signals via the control unit 7305, and the received video This can be displayed on the display unit 7302. Furthermore, the control unit 7305 is equipped with a battery. Furthermore, the control unit 7305 is equipped with a terminal section for connecting a connector, allowing video signals and power to be transmitted via wire. A configuration that supplies power directly from an external source is also acceptable.

[0408] Additionally, the 7303 control button allows you to turn the power on and off and switch the displayed image. These can be done.

[0409] Figure 19(B) shows the display unit 7302 pulled out by the pull-out member 7304. The device 7300 is shown. In this state, an image can be displayed on the display unit 7302. Also, The operation buttons 7303 located on the surface of the housing 7301 allow for easy one-handed operation. This is possible. Also, as shown in Figure 19(A), the operation button 7303 is located in the center of the housing 7301. By positioning it to one side, it can be easily operated with one hand.

[0410] Furthermore, when the display unit 7302 is pulled out, the display surface of the display unit 7302 is fixed to become flat. To ensure stability, a reinforcing frame may be provided on the side of the display unit 7302.

[0411] In addition to this configuration, a speaker is installed in the enclosure, and the audio signal received along with the video signal is used. It may also be configured to output sound.

[0412] The display unit 7302 incorporates a light-emitting device according to one aspect of the present invention. Therefore, the display Since part 7302 is a flexible and reliable display device, the display device 7300 is This allows for a lightweight and highly reliable display device.

[0413] Furthermore, if a light-emitting device according to one aspect of the present invention is provided, the electronic equipment and lighting devices described above will be used. Needless to say, this is not limited to any particular category.

[0414] This embodiment can be freely combined with other embodiments. [Examples]

[0415] In this embodiment, a light-emitting device according to one aspect of the present invention is fabricated, and the transistors in the light-emitting device We will now explain the results of our evaluation of the characteristics.

[0416] In this embodiment, sample a is a light-emitting device according to one aspect of the present invention, and comparative example is a light-emitting device. Sample b was prepared. Sample a consists of a first flexible substrate 101 and a second flexible substrate 111. Between them are a planarization layer 105 and a transistor 103 provided on one side of the planarization layer 105. Then, the organic EL element 107 provided on the other side of the planarization layer 105 is bonded to the pair of substrates. The system comprises an adhesive layer 109 and (see Figure 1). Comparative sample b is a pair of glass substrates (flexible (Without) and in the space surrounded by the adhesive layer, a planarization layer similar to sample a, transistors, and It is equipped with organic EL elements. The space is in an inert atmosphere.

[0417] First, the preparation process for sample a will be explained. In this example, the explanation will be given with reference to Figure 6. .

[0418] First, a silicon oxide nitride film with a thickness of 200 nm is placed on the glass substrate, which is the fabricated substrate 501. It was formed as a ground film. Then, it was washed with a 0.5% hydrofluoric acid solution. This improves the adhesion between the base film and the subsequent release layer 503.

[0419] Next, a tungsten film with a thickness of 30 nm is formed on the base film as a release layer 503, and the release layer A peelable layer 505 was formed on 503 (Figure 6(A)). In this embodiment, the peelable layer 505 is The material includes an insulating film, a transistor 103, a planarization layer 105, and an organic EL element 107.

[0420] First, an insulating film was formed on the peeling layer 503 as the peeling layer 505. The insulating film was a film Silicon oxide nitride film with a thickness of 600 nm, silicon nitride film with a thickness of 200 nm, silicon nitride film with a thickness of 200 nm Silicon oxide nitride film, silicon oxide nitride film with a thickness of 140 nm, and acid with a thickness of 100 nm Silicon nitride films were layered in this order. Then, they were heated at 480°C for 1 hour under a nitrogen atmosphere. The treatment was carried out. Then, it was washed with a 0.5% hydrofluoric acid solution.

[0421] Next, transistor 103 was formed on the insulating film. First, by sputtering on the insulating film... A tungsten film with a thickness of 200 nm is formed, and the tungsten film is then processed using a photolithography process. A mask is formed on the tungsten film, and a portion of the tungsten film is etched using the mask. A galvanic electrode was formed.

[0422] Next, a gate insulating film was formed on the gate electrode. The gate insulating film was made with a thickness of 90 nm. A silicon nitride film and a silicon oxidizide film with a thickness of 50 nm were layered in this order.

[0423] Next, an oxide semiconductor film was formed to overlap the gate electrode via a gate insulating film. Here, A 35 nm thick oxide semiconductor film is formed on the gate insulating film by sputtering, and then photolithography is performed. A mask is formed on the oxide semiconductor film by a sography process, and the oxide is used with the mask. A portion of the semiconductor film was etched to form an oxide semiconductor film.

[0424] Oxide semiconductor films are sputtered using an In:Ga:Zn=1:1:1 (number of atoms) target. The target is a ratio of argon at a flow rate of 50 sccm and oxygen at a flow rate of 50 sccm, and spam The sputtering gas is supplied into the reaction chamber of the sputtering apparatus, and the pressure inside the reaction chamber is set to 0.7 The film was formed by controlling the power to Pa and supplying 5kW of DC power. The substrate temperature at the time was set to 170°C.

[0425] Afterward, the material was heated in a nitrogen atmosphere at 450°C for 1 hour, followed by a nitrogen and oxygen atmosphere. The material was then subjected to a heat treatment at 450°C for 1 hour.

[0426] Next, a portion of the gate insulating film is etched to expose the gate electrode, and then the oxide semiconductor film is... A pair of contacting electrodes (source electrode and drain electrode) were formed. Here, a gate insulating film was created. A conductive film was formed on the oxide semiconductor film. The conductive film was made of tungsten with a thickness of 50 nm. A tungsten film, a 400nm thick aluminum film, and a 100nm thick titanium film are formed in this order. It was done. Then, a mask was formed on the conductive film by a photolithography process, and the mask A pair of electrodes was formed by etching a portion of the conductive film using a tool.

[0427] Next, a 150W high-frequency power supply of 27.12MHz is used to power the upper electrode installed in the reaction chamber. An oxide semiconductor film was exposed to an oxygen plasma generated by supplying high-frequency power.

[0428] Next, a protective film was formed on the oxide semiconductor film and the pair of electrodes. Here, the protective film was: A first oxide insulating film, a second oxide insulating film, and a nitride insulating film were formed.

[0429] First, a silicon oxide nitride film with a thickness of 50 nm is formed as the first oxide insulating film, and then the second oxide A silicon oxidoxide-nitride film with a thickness of 400 nm was formed as an insulating film.

[0430] Next, a heat treatment is performed to remove water, nitrogen, hydrogen, etc. from the first and second oxide insulating films. Desorption was performed. Here, a heat treatment was carried out at 350°C for 1 hour in a nitrogen and oxygen atmosphere.

[0431] Next, the substrate is moved to a reduced-pressure processing chamber, heated at 350°C, and then a second oxide insulating film is applied. A nitride insulating film was formed. Here, a silicon nitride film with a thickness of 100 nm was used as the nitride insulating film. It formed.

[0432] Next, a portion of the protective film was etched to form an opening that exposed part of the pair of electrodes.

[0433] Next, a planarization layer 105 was formed on the protective film. Here, after applying the composition onto the protective film... Exposure and development are performed to create a planarization layer 105 having an opening that exposes a portion of the pair of electrodes. Formed. Furthermore, a 1.5 μm thick acrylic resin film was formed as the planarization layer 105. Subsequently, heat treatment was performed. This heat treatment was carried out at a temperature of 250°C in an atmosphere containing nitrogen. I went for an hour.

[0434] Next, a conductive film was formed that electrically connected to a portion of the pair of electrodes. Here, an organic EL element was formed. As the lower electrode of 107, a titanium film with a thickness of 50 nm was made by sputtering, and a film with a thickness of 200 An aluminum film of nm thickness and a titanium film with a thickness of 3 nm are formed, and further, silicon dioxide is included. A tin oxide (ITSO) film was formed as an optical adjustment layer. The thickness of the ITSO film was... The light-emitting elements in the color pixels are 82nm, and the light-emitting elements in the green pixels are 45nm. For the light-emitting elements included in the blue pixels, the wavelength was set to 5 nm.

[0435] Next, a partition wall was formed to cover the edges of the conductive film. Here, a 1.0 μm thick polymer film was used as the partition wall. An imide resin film was formed. Afterward, a heat treatment was performed. This heat treatment involved setting the temperature to 250°C. The procedure was performed at °C and in a nitrogen-containing atmosphere for 1 hour.

[0436] Next, a spacer with an inverted tapered shape was formed on the partition wall. Here, a spacer with a thickness of 2.0 μm was used. The material was formed using a negative-type photosensitive resin. Afterward, it underwent heat treatment. The experiment was conducted at a temperature of 250°C in a nitrogen-containing atmosphere for one hour.

[0437] Next, an EL layer and an upper electrode were formed on the conductive film. The EL layer and upper electrode are responsible for the emission of each color pixel. This is a common configuration for optical elements. The light-emitting element in this embodiment has an EL layer that is a blue light-emitting layer. It comprises a light-emitting unit and a phosphorescent light-emitting unit having a green light-emitting layer and a red light-emitting layer. It is a tandem-type light-emitting element. For the upper electrode, magnesium and silver are co-deposited to form a film. A film was deposited to a thickness of 15 nm. Furthermore, an ITO film with a thickness of 70 nm was formed on the upper electrode. The organic EL element 107 was formed as described above.

[0438] Furthermore, a base layer and a release layer 553 were formed on the glass substrate 551, which was the fabricated substrate. The film and release layer 553 are prepared in the same manner as the undercoat film and release layer 503 prepared on the fabricated substrate 501. The material was manufactured. Then, the peelable layer 555 was formed on the peelable layer 553 (Figure 6(B)). This embodiment The peelable layer 555 includes an insulating film, a color filter, and the like.

[0439] First, an insulating film was formed on the peeling layer 553 as the peeling layer 555. The insulating film is the peeling layer It was fabricated in the same way as the insulating film included in 505. Next, a color filter was formed on the insulating film. Subsequently, an ITO film with a thickness of 20 nm was formed on the color filter. Here, the ITO film was Compared to the LAR filter, it has higher wettability to the material used in the adhesive layer 109, so the fabricated substrate When bonding 501 and the fabricated substrate 551, the formation of air bubbles can be suppressed, thus sealing the element. It can stop the process effectively.

[0440] Next, the fabricated substrate 501 and the fabricated substrate 551 were bonded together using the adhesive layer 109 (Figure 6). (C)). A UV-curable resin was used for the adhesive layer 109.

[0441] Then, the peel-off layer 505 was peeled off from the fabricated substrate 501 using the peel-off layer 503. Next, The first peelable layer 505, which has been peeled off from the fabricated substrate 501 and exposed, is treated with an adhesive layer 123. The flexible substrate 101 was bonded (Figure 6(D)). Similarly, the layer to be peeled off 5 was bonded using the release layer 553. 55 was peeled off from the fabricated substrate 551. Subsequently, the exposed material that was peeled off from the fabricated substrate 551 The second flexible substrate 111 was bonded to the release layer 555 using the adhesive layer 187 (Figure 6(E)). ). The first flexible substrate 101 and the second flexible substrate 111 have a plastic film thickness of 20 μm. A black film was used. The first flexible substrate 101 and the second flexible substrate 111 undergo thermal expansion. The substrate has a ratio of 10 ppm / K or less and is resistant to deformation even when heat is applied. Adhesive layer 123 A UV-curable resin was used for the adhesive layer 187.

[0442] Finally, FPC4505 was attached to each electrode of the input / output terminal section using an anisotropic conductive material.

[0443] Based on the above, sample a of this embodiment was prepared.

[0444] On the other hand, in comparative sample b, the translucent material was applied directly to the glass substrate, which is the support substrate (without the release layer), A zista 103, a planarization layer 105, and an organic EL element 107 were formed. Then, an adhesive layer was formed. Using this method, the opposing substrate and the support substrate are bonded together under reduced pressure, and transistor 103, The planarization layer 105, organic EL element 107, color filter, etc. were sealed. The adhesive layer is protected from ultraviolet light. A curing resin was used, and a glass substrate with a color filter was used as the opposing substrate. Furthermore, an FPC was attached to each electrode of the input / output terminal section using an anisotropic conductive material. Thus, this embodiment... A comparative sample b was prepared.

[0445] The Vg-Id characteristics of the transistor in sample a and the transistor in comparison sample b are shown. The results are shown in Figure 20. The results for sample a are shown by a thick solid line, and the results for comparison sample b are shown by a thin solid line. Here, the FPC terminals of each sample were connected to the measuring instrument for measurement. The measured transistors were The channel length and channel width are L / W = 3 nm / 1000 nm, and the silicon oxide film ( The thickness of the gate insulating film, converted to a dielectric constant of 4.1, was 100 nm.

[0446] From the results in Figure 20, the characteristics of the transistor in sample a and the transistor in comparative sample b are shown. It was shown that there is no significant difference in performance. Therefore, by applying one aspect of the present invention, To create a flexible light-emitting device that is as reliable as conventional non-flexible light-emitting devices. It was shown that it is possible. [Explanation of Symbols]

[0447] 101 First flexible substrate 103 Transistors 105 Planarization layer 107 Organic EL elements 109 Adhesive layer 111 Second flexible substrate 121 Undercoat 123 Adhesive layer 131 gate 133 Gate insulating film 135 Semiconductor layer 137a conductive layer 137b Conductive layer 141 Insulating Film 143 transistors 145 transistors 147 transistors 151 First flattening layer 153 Second flattening layer 155 Wiring 157 Color Filters 161 Bulkhead 171 First electrode 173 EL layer 175 Second electrode 181 Color Filters 183 Black Matrix 185 Undercoat 187 Adhesive layer 201 First electrode 203 EL layer 203a First EL layer 203b Second EL layer 205 Second electrode 207 Middle Class 211 transistors 212 transistors 213 transistors 214 transistors 216 Insulating layer 217 Insulating layer 218 Insulating layer 219 Insulating layer 221 Color Filters 222 Black Matrix 223 Insulating layer 250 Display device 270 Display device 271 Display section 272 Scan line drive circuit 273 Signal Line Drive Circuit 274 External connection terminals 275 FPC 276 connectors 290 Lighting devices 293 Extraction electrode 297 Edible electrodes 299 Insulating layer 301 Hole injection layer 302 Hole transport layer 303 Emitting layer 304 Electron transport layer 305 Electron injection layer 306 Electron injection buffer layer 307 Electron relay layer 308 Charge generation region 400 Light-emitting devices 401 circuit board 403 First electrode 405 EL layer 407 Second electrode 409 Insulating layer 410 light-emitting elements 411 First protective layer 412 Second protective layer 413 Third protective layer 414 The fourth protective layer 415 The fifth protective layer 420-element layer 450 Light-emitting devices 460 Light-emitting devices 501 Fabricated substrate 503 Exfoliation layer 505 Peeling layer 507 Temporary support substrate 509 Release Adhesive 551 Fabricated substrate 553 Exfoliation layer 555 Peeling layer 601a First delamination layer 601b Second delamination layer 603 Insulating layer 604 Buffer Layer 606 Terminal Station 608 Gate Insulation Layer 610 Semiconductor layer 612a Source electrode 612b Drain electrode 614 First insulating layer 616 Second insulating layer 618 1st electrode 620 Layer containing organic compounds 622 2nd electrode 624 Bulkhead 630 light-emitting elements 650 transistors 651 transistors 652 transistors 657 Terminal electrode 662 buffer layers 663 Passivation Layer 664 Light-shielding film 666 Color Filters 668 Overcoat 670 Adhesive layer 700a 1st organic layer 700b 2nd organic layer 901 First board 902 Second board 903 Third board 4502 pixel section 4503 Signal Line Drive Circuit 4503a Signal Line Drive Circuit 4503b Signal line drive circuit 4504 Scan line drive circuit 4504a Scan line drive circuit 4504b Scan line drive circuit 4505 FPC 4601 Terminal section 4602 pixel section 4603 Signal line circuit section 4605 FPC 7100 Portable Display Device 7101 enclosure 7102 Display section 7103 Operation Buttons 7104 Transceiver 7200 Lighting device 7201 Daibu 7202 Light-emitting part 7210 Lighting device 7212 Light-emitting part 7220 Lighting device 7222 Light-emitting part 7300 display device 7301 enclosure 7302 Display section 7303 Operation Buttons 7304 component 7305 Control Unit 7400 mobile phones 7401 enclosure 7402 Display section 7403 Operation Buttons 7404 External connection port 7405 Speaker 7406 Microphone

Claims

[Claim 1] Between one surface of the first flexible substrate and one surface of the second flexible substrate, The flattening layer, A transistor provided on one side of the planarized layer, A light-emitting element having a first electrode provided in contact with the other surface of the planarized layer and electrically connected to the transistor, a layer containing a light-emitting organic compound on the first electrode, and a second electrode on the layer containing the light-emitting organic compound, The invention comprises the first flexible substrate and the second flexible substrate, A light-emitting device wherein the thickness A from the other surface of the first flexible substrate to the other surface of the planarization layer is 0.8 times or more and 1.2 times or less the thickness B from the other surface of the planarization layer to the other surface of the second flexible substrate.

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