Light-emitting device

Abstract

Suppresses malfunctions. [Solution] A field-effect transistor, a switch, and a capacitive element are provided. The lunger consists of a first gate and a second gate that superimpose each other through a channel-forming region. The switch has a threshold voltage that changes depending on the potential of the second gate. The source and drain of a transistor, and the second gate in a field-effect transistor It has a function to control whether or not to make it conduction. Capacitive elements are field-effect transistors The second gate in the field-effect transistor and the other side of the source and drain in the field-effect transistor It has the function of maintaining the voltage between them.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a semiconductor device. Another aspect of the present invention relates to a light-emitting device. Furthermore, one aspect of the present invention relates to electronic equipment. [Background technology]

[0002] In recent years, the development of semiconductor devices using field-effect transistors has been progressing.

[0003] As an example of the above-mentioned semiconductor device, a current flows between the source and drain of the above-mentioned field-effect transistor. Examples include semiconductor devices that control the amount of current supplied to perform a desired operation (for example, Patent Document 1 ). [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2008-083085 [Overview of the Initiative] [Problems that the invention aims to solve]

[0005] However, in conventional semiconductor devices, the threshold voltage variation in field-effect transistors Due to the effects of this, there are problems such as difficulty in controlling the amount of current flowing between the source and drain. If the amount of current flowing between the source and drain cannot be controlled, for example, in a semiconductor device... This can lead to malfunctions and other problems.

[0006] In one aspect of the present invention, malfunctions are suppressed, and the threshold voltage of the field-effect transistor is One of the challenges is to reduce the impact of variability, or a combination of other factors. [Means for solving the problem]

[0007] In one aspect of the present invention, a field effect transistor having a first gate and a second gate that overlap each other through a channel formation region is used. Further, by controlling the potential of the second gate, the threshold voltage of the field effect transistor is set. By adopting the above configuration, the control of the current flowing between the source and the drain of the field effect transistor during operation is achieved.

[0008] One aspect of the present invention is a semiconductor device including a field effect transistor, a switch, and a capacitive element.

[0009] The above field effect transistor has a first gate and a second gate that overlap each other through a channel formation region. The value of the threshold voltage in the field effect transistor changes according to the potential of the second gate. Also, the field effect transistor may be normally-on. For example, the field effect transistor may be a depletion-type transistor.

[0010] The above switch has a function of controlling whether to conduct one of the source and the drain of the field effect transistor and the second gate in the field effect transistor.

[0011] The above capacitive element has a function of holding the voltage between the second gate in the field effect transistor and the other of the source and the drain in the field effect transistor.

Advantages of the Invention

[0012] According to one aspect of the present invention, operation failures are suppressed, and the threshold voltage of the field effect transistor ​​​​​​​​​​One or more effects of reducing the influence of variations can be obtained.

Brief Description of the Drawings

[0013] [Figure 1] A diagram for explaining an example of a semiconductor device. [Figure 2] A diagram for explaining an example of a light-emitting device. [Figure 3] A diagram for explaining an example of a light-emitting device. [Figure 4] A diagram for explaining an example of a light-emitting device. [Figure 5] A diagram for explaining an example of a light-emitting device. [Figure 6] A diagram for explaining an example of a light-emitting device. [Figure 7] A diagram for explaining an example of a light-emitting device. [Figure 8] A diagram for explaining an example of a field-effect transistor. [Figure 9] A diagram for explaining an example of the structure of an active matrix substrate. [Figure 10] A diagram for explaining an example of the structure of a light-emitting device. [Figure 11] A diagram for explaining an example of an electronic device. [Figure 12] A diagram for explaining an example of an electronic device.

Modes for Carrying Out the Invention

[0014] Examples of embodiments according to the present invention will be described below. Note that it is easy for those skilled in the art to change the content of the embodiments without departing from the spirit and scope of the present invention. Thus, the present invention is not limited to the description of the embodiments shown below.

[0015] Note that part or all of the content in each embodiment (for example, the content shown in the specification or the drawings) can be appropriately combined with each other. Also, part of the content in each embodiment can be appropriately replaced with each other. It can be replaced.

[0016] Furthermore, ordinal numbers such as 1st, 2nd, etc. are added to avoid confusion of the constituent elements, and each constituent element The number is not limited to ordinal numbers.

[0017] (Embodiment 1) In this embodiment, an example of a semiconductor device comprising a field-effect transistor having two gates is provided. This will be explained using Figure 1.

[0018] The semiconductor device shown in Figure 1(A) consists of a field-effect transistor (Tr), a switch (Sw), and a capacitance element (Ctr). It comprises a child Cp and

[0019] A field-effect transistor (Tr) has a first gate and a second gate. The first gate and the second gate in the zista Tr are connected to each other via the channel-forming region. They are superimposed. Also, the field-effect transistor Tr has a threshold voltage depending on the potential of the second gate. The value is controlled.

[0020] Field-effect transistors (Tr) include enhancement-type and depletion-type field-effect transistors. A transistor can be used.

[0021] Switch Sw controls one of the sources and drains of a field-effect transistor Tr, and the field A function that controls whether or not to conduct electricity between the second gate and the effect transistor Tr. It holds.

[0022] The capacitive element Cp is the second gate and field-effect transistor Tr in the field-effect transistor It has the function of maintaining the voltage between the source and the other drain of the transistor.

[0023] Next, as an example of a method for driving a semiconductor device in this embodiment, the semiconductor device shown in Figure 1(A) An example of a driving method will be explained using Figures 1(B-1) to 1(B-3). For example, a field-effect transistor (Tr) is a depletion-type N-channel transistor. Let's explain what happens when you're a standard.

[0024] In the example of a semiconductor device driving method shown in Figure 1(A), as shown in Figure 1(B-1), the period T1 In this case, the switch Sw is turned ON (also called state ON). Also, the field effect transistor A potential V1 is supplied to the first gate of the zista Tr. Also, the field-effect transistor T A potential V2 is supplied to the second gate at r. Also, in the field-effect transistor Tr The potential Vb is supplied to the other end of the source and drain. Note that the value of V2 is the same as the value of V1-Vb. Assume it is greater than.

[0025] At this time, the second gate and drain of the field-effect transistor Tr become conductive. The potentials of the second gate and drain in the field-effect transistor Tr are The voltage becomes V2. As a result, the threshold voltage (Vt) of the field-effect transistor Tr is determined according to the potential V2. h (also known as h) shifts in the negative direction.

[0026] For example, if the threshold voltage of the original field-effect transistor Tr is Vth0, then during period T1, The threshold voltage of the field-effect transistor Tr is Vth0 - ΔVth. At this time, ΔV The value of th is determined according to the value of the potential V2. Therefore, the field effect traction depends on the value of the potential V2. The threshold voltage value of the transistor changes.

[0027] Also, the voltage between the first gate and source in a field-effect transistor (Tr) (also known as Vgs) The expression (i) becomes V1-Vb. At this time, the value of V1-Vb is the field effect during period T1. The voltage is greater than the threshold voltage of the transistor Tr. Therefore, the field-effect transistor Tr is in the ON state. It will become.

[0028] Next, during period T2, switch Sw is turned ON. Also, a field-effect transistor A potential V1 is supplied to the first gate of the Tr. Also, the field-effect transistor Tr Put the second gate into a floating state.

[0029] At this time, the field-effect transistor Tr remains in the ON state. When current flows between the source and drain of a transistor, a field-effect transistor is produced. The potential of the second gate in the zista transistor changes. This causes the field-effect transistor to change. The threshold voltage value in the Tr is shifted in the positive direction, and the threshold voltage in the field-effect transistor Tr The field-effect transistor Tr turns off when the voltage exceeds V1-Vb. This allows us to obtain threshold voltage data for the field-effect transistor (Tr).

[0030] Next, during period T3, switch Sw is turned off. Also, a field-effect transistor... The potential of the first gate in the transistor is set to V1 + Vsig, and then the field-effect transistor Tr The first gate is set to a floating state. Vsig is the potential of the data signal. Also, the electric field The second gate of the effect transistor Tr is made to a floating state. Also, the field effect transistor A potential Va is supplied to either the source or the drain of the sta transistor.

[0031] At this time, the field-effect transistor Tr turns on, and the field-effect transistor Tr Current flows between the source and drain. At this time, in a field-effect transistor Tr Let the potential Vc be the potential of the other end of the source and drain.

[0032] For example, when operating a field-effect transistor (Tr) in the saturation region, The current value (Ids) flowing between the source and drain of a transistor is a field-effect transistor. Regardless of the threshold voltage of the transistor, it is determined by the value of the data signal input to the first gate. Therefore, for example, when Vgs is greater than V1-Vb, the field-effect transistor Tr is ON. In this state, current flows between the source and the drain.

[0033] Furthermore, due to the degradation of the field-effect transistor Tr, the source of the field-effect transistor Tr And even if the potential of the other drain changes, in the field-effect transistor Tr Since the first and second gates are in a floating state and there is a capacitive element Cp, the field effect This allows for suppression of voltage changes between the first gate and source in the transistor.

[0034] Furthermore, a mobility correction period is provided between period T2 and period T3, and the mobility of the field-effect transistor Tr is adjusted. The potential of the second gate in the field-effect transistor Tr may be set according to the mobility. This makes it possible to suppress the effects of variations in the mobility of the field-effect transistor Tr.

[0035] The above describes an example of a driving method for a semiconductor device in this embodiment.

[0036] As explained using Figure 1, in an example of a semiconductor device in this embodiment, the threshold voltage data A data acquisition period (e.g., period T2) is established, and the threshold voltage data of the field-effect transistor is obtained in advance. Keep this in mind. This will allow the current to flow between the source and drain of the field-effect transistor. Because the quantity can be determined regardless of the threshold voltage of the field-effect transistor, This can suppress the effects of variations in the threshold voltage of the field-effect transistor. Furthermore, it can reduce the degradation of the field-effect transistor. The effects can be mitigated.

[0037] Furthermore, in an example of a semiconductor device in this embodiment, they superimpose each other via channel formation regions. A field-effect transistor having a first gate and a second gate is used. Therefore, even if the field-effect transistor is a depletion-type transistor, the field-effect transistor Threshold voltage data of the inverter can be obtained because the electric field effect is due to the potential of the second gate. Because the threshold voltage of the field-effect transistor can be shifted, the field-effect transistor is N It is a channel-type transistor, and the original threshold voltage of the field-effect transistor is negative. It is a mullion, and the voltage between the first gate and source in a field-effect transistor is This is because the field-effect transistor can be turned off even without a negative value. Therefore, the amount of current flowing between the source and drain in a field-effect transistor is defined as the field effect. Because it is determined regardless of the threshold voltage of the field-effect transistor, the threshold voltage of the field-effect transistor This can suppress the effects of variations.

[0038] Therefore, in the example of the semiconductor device in this embodiment, the soar in the field-effect transistor Because the amount of current flowing between the spool and the drain can be controlled, malfunctions can be suppressed.

[0039] (Embodiment 2) In this embodiment, an example of a light-emitting device equipped with a field-effect transistor having two gates is provided. This will be explained using Figures 2 through 6.

[0040] The light-emitting device shown in Figure 2(A) consists of wiring 151 to 158 and a field-effect transistor 11 1 to 1 field-effect transistor 118, capacitive elements 121 and 122, and light-emitting element It is equipped with (also called EL) 140 and

[0041] Wiring 151 functions, for example, as a data signal line for supplying data signals.

[0042] Wiring 152 functions, for example, as a potential supply line for supplying potential.

[0043] Wiring 153 is, for example, a gate signal line for supplying a gate signal, which is a pulse signal. It has a function.

[0044] Wiring 154 is, for example, a gate signal line for supplying a gate signal, which is a pulse signal. It has a function.

[0045] Wiring 155 is, for example, a gate signal line for supplying a gate signal, which is a pulse signal. It has a function.

[0046] Wiring 156 functions, for example, as a potential supply line for supplying potential.

[0047] Wiring 157 functions, for example, as a potential supply line for supplying potential.

[0048] Wiring 158 functions, for example, as a potential supply line for supplying potential.

[0049] In the field-effect transistor 111, either the source or the drain is electrically connected to the wiring 151. It is connected to the gate of the field-effect transistor 111, and the electrical current of the wiring 153 is connected to the gate of the field-effect transistor 111. It connects to the target.

[0050] In the field-effect transistor 112, one of the source and drain is a field-effect transistor It is electrically connected to the other side of the source and drain in the 111. Also, the field effect trap The gate in the inverter 112 is electrically connected to the wiring 154.

[0051] One of the pair of electrodes in the capacitive element 121 is connected to the soaring electrode in the field-effect transistor 111. It is electrically connected to the other end of the pipe and drain.

[0052] The field-effect transistors 113 have a first gate that superimposes itself on each other through a channel-forming region. The field-effect transistor 113 has a first gate and a second gate. The first gate in the field-effect transistor 113 is an electric field It is electrically connected to the source and the other drain of the effect transistor 112.

[0053] In the field-effect transistor 114, one of the source and drain is a field-effect transistor It is electrically connected to either the source or the drain of the 113. The source and drain of transistor 114 are connected to field-effect transistor 113. It is electrically connected to the second gate in the field-effect transistor 114. The wire is electrically connected to wiring 153.

[0054] One of the pair of electrodes in the capacitive element 122 is the second electrode in the field-effect transistor 113. It is electrically connected to the gate. Also, the other of the pair of electrodes in the capacitive element 122 is electrically connected. It is electrically connected to the source and the other drain of the field-effect transistor 113.

[0055] In the field-effect transistor 115, either the source or the drain is electrically connected to the wiring 152. It is connected to the source and the other drain of the field-effect transistor 115. , electrically connected to one of the source and drain in the field-effect transistor 113 Furthermore, the gate of the field-effect transistor 115 is electrically connected to the wiring 154. ru.

[0056] In the field-effect transistor 116, either the source or the drain is electrically connected to the wiring 156. It is connected to the source and the other drain of the field-effect transistor 116. It is electrically connected to the first gate in the field-effect transistor 113. The gate of the effect transistor 116 is electrically connected to the wiring 153.

[0057] In the field-effect transistor 117, either the source or the drain is electrically connected to the wiring 157. It is connected to the source and the other drain of the field-effect transistor 117. , the other of the pair of electrodes in the capacitive element 121 and the other of the pair of electrodes in the capacitive element 122 It is electrically connected to the other side. Also, the gate of the field-effect transistor 117 is connected to the wiring 1 It is electrically connected to 53.

[0058] In the field-effect transistor 118, either the source or the drain is electrically connected to the wiring 158. It is connected to the source and the other drain of the field-effect transistor 118. It is electrically connected to the second gate in the field-effect transistor 113. The gate of the effect transistor 118 is electrically connected to the wiring 155.

[0059] One of the anodes and cathodes of the light-emitting element 140 is connected to the field-effect transistor 113. It is electrically connected to the source and the other drain. The light-emitting element 140 is, for example, Electroluminescent elements (also known as EL elements) can be used.

[0060] Furthermore, the light-emitting device shown in Figure 2(B) is a field-effect transistor of the light-emitting device shown in Figure 2(A) The connection relationship between the 113 and the field-effect transistor 117 is different.

[0061] In the light-emitting device shown in Figure 2(B), the source and discharge of the field-effect transistor 113 The other side of the rain is electrically charged to the other side of the source and drain in the field-effect transistor 112. They are connected precisely. Also, the first gate in the field-effect transistor 113 is a capacitive element. It is electrically connected to the other of the pair of electrodes in 121. Also, field-effect transistor 1 The other of the source and drain in 17 is the source in the field-effect transistor 112. And the other side of the drain, and the other side of the pair of electrodes in the capacitive element 122 are electrically connected. ru.

[0062] Furthermore, the light-emitting device shown in Figure 2(C) is a field-effect transistor of the light-emitting device shown in Figure 2(B). The connection of 116 is different, and the configuration lacks wiring 156.

[0063] In the light-emitting device shown in Figure 2(C), the source and the drive in the field-effect transistor 116 One end of the rain is electrically connected to the first gate in the field-effect transistor 113. Furthermore, the source and the other drain of the field-effect transistor 116 are capacitive elements. It is electrically connected to the other of the pair of electrodes in 122. Also, field-effect transistor 1 13 can also be an enhancement transistor.

[0064] By using the configuration shown in Figure 2(C), the number of wires can be reduced.

[0065] Furthermore, the light-emitting device shown in Figure 3(A) includes, in addition to the light-emitting device shown in Figure 2(A), wiring 159 and Wiring 160 is provided, and field-effect transistors 111 and 117 are connected. The relationship is different, and this configuration lacks the field-effect transistor 112.

[0066] In the light-emitting device shown in Figure 3(A), the gate of the field-effect transistor 111 is It is electrically connected to line 159. Also, the first gate in field-effect transistor 113 The terminal is electrically connected to the source and drain of the field-effect transistor 111. Furthermore, the gate of the field-effect transistor 117 is electrically connected to the wiring 160. It will be done.

[0067] The light-emitting device shown in Figure 3(B) has the same connection relationship for the capacitive element 121 as the light-emitting device shown in Figure 3(A). They have different configurations.

[0068] In the light-emitting device shown in Figure 3(B), the other electrode of the pair in the capacitive element 121 is an electric field It is electrically connected to the source and the other drain of the effect transistor 111.

[0069] The light-emitting device shown in Figure 3(C) is the same as the field-effect transistor 116 of the light-emitting device shown in Figure 3(B). The connection relationships are different, and the configuration lacks wiring 156.

[0070] In the light-emitting device shown in Figure 3(C), the source and the drive in the field-effect transistor 116 One end of the rain is electrically connected to the first gate in the field-effect transistor 113. Furthermore, the source and the other drain of the field-effect transistor 116 are capacitive elements. The other electrode of the pair at 122 is electrically connected. The field-effect transistor 113 is Enhancement transistors can also be used.

[0071] By using the configuration shown in Figure 3(C), the number of wires can be reduced.

[0072] Furthermore, by using the configuration shown in Figures 3(A) to 3(C), the field-effect transistor The number of participants can be reduced.

[0073] Another example of a light-emitting device that includes a capacitive element for adjusting the voltage applied to the light-emitting element 140. This will be explained using Figure 4.

[0074] The light-emitting device shown in Figure 4(A) has the same configuration as the light-emitting device shown in Figure 2(A), plus a capacitive element 123 It is equipped with.

[0075] In the light-emitting device shown in Figure 4(A), one of the pair of electrodes in the capacitive element 123 emits light. It is electrically connected to either the anode or cathode of element 140. A reference potential is applied to one of the pair of electrodes in 123.

[0076] Furthermore, the light-emitting device shown in Figure 4(B) has the same configuration as the light-emitting device shown in Figure 2(B), plus a capacitive element. The configuration includes 123. The connection relationship of the capacitive element 123 is as shown in Figure 4(A) for the light-emitting device and They are the same.

[0077] Furthermore, the light-emitting device shown in Figure 4(C) has the same configuration as the light-emitting device shown in Figure 2(C), plus a capacitive element. The configuration includes 123. The connection relationship of the capacitive element 123 is as shown in Figure 4(A) for the light-emitting device and They are the same.

[0078] Furthermore, the light-emitting devices are not limited to those shown in Figures 4(A) to 4(C), but are, for example, those shown in Figures 3(A) to 4(C). In addition to the configuration of the light-emitting device shown in 3(C), a capacitive element may be provided.

[0079] Next, an example of a driving method for the light-emitting device in this embodiment will be described using Figures 5 and 6. .

[0080] As an example of a driving method for the light-emitting device in this embodiment, the driving method for the light-emitting device shown in Figure 5(A) An example will be explained using the timing chart in Figure 5(B). The light emission shown in Figure 5(A) The device, as shown in Figure 2(A), has a light-emitting element 140 which is a light-emitting diode, and the field effect Each of transistors 111 through 118 is an N-channel type transistor This is a light-emitting device in the case of a standard. In this case, the light-emitting diode, which is the light-emitting element 140, The anode is electrically connected to the other electrode of the pair of electrodes in the capacitive element 122. A potential Vx is applied to the cathode of the light-emitting diode, which is the light-emitting element 140.

[0081] In the example of the driving method for the light-emitting device shown in Figure 5(A), as shown in Figure 5(B), during the period T11... Then, a high-level (also called VH) signal is input via wiring 153, and via wiring 154 A low-level (also called VL) signal is input, and a high-level signal is transmitted via wiring 155. Enter the following: Also, supply potential V11 to wiring 156 and potential V12 to wiring 157. , supply potential V13 to wiring 158. At this time, the potential difference between potential V11 and potential V12 is, Assume that it is greater than the threshold voltage (also called Vth113) of the field-effect transistor 113. Furthermore, assume that the potential V12 is less than the potential Vx.

[0082] At this time, field-effect transistor 111, field-effect transistor 114, field-effect transistor When the transistor 116, field-effect transistor 117, and field-effect transistor 118 are ON In this state, field-effect transistors 112 and 115 are turned off. Yes.

[0083] Furthermore, the second gate and drain of the field-effect transistor 113 become conductive. The potentials of the second gate and drain in the field-effect transistor 113 are The voltage becomes V13. As a result, the threshold voltage of the field-effect transistor 113 is determined according to the potential V13. It shifts in the negative direction.

[0084] Also, the voltage between the first gate and source (Vgs1) in the field-effect transistor 113 (Also known as 13) becomes V11-V12. The value of V11-V12 is the field effect at this time. The voltage is greater than the threshold voltage of transistor 113. Therefore, field-effect transistor 113 turns on. It becomes that state.

[0085] Next, during period T12, a data signal is input via wiring 151 and via wiring 153. A high-level signal is input via wiring 154, and a low-level signal is input via wiring 15 A low-level signal is input via 5. Also, potential V11 is supplied to wiring 156, and wiring A potential of V12 is supplied to 157.

[0086] At this time, field-effect transistor 111, field-effect transistor 114, field-effect transistor The zista 116 and the field-effect transistor 117 are turned on, and the field-effect transistors Transistor 112, field-effect transistor 115, and field-effect transistor 118 are in the OFF state. Yes.

[0087] Furthermore, the field-effect transistor 113 remains in the ON state. A current flows between the source and drain of the zista 113, causing a field-effect transistor to be activated. The potential of the second gate in Zistor 113 changes. This causes the field-effect transistor The threshold voltage value at 113 shifts in the positive direction, and in field-effect transistor 113 The field-effect transistor 113 turns off when the threshold voltage becomes V11-V12 or higher. This results in obtaining threshold voltage data for the field-effect transistor 113.

[0088] Furthermore, the potential of one of the pair of electrodes in the capacitive element 121 is input via the wiring 151. This represents the potential (Vsig) of the data signal.

[0089] Next, during period T13, a low-level signal is input via wiring 153, and wiring 154 A high-level signal is input via this, and a low-level signal is input via wiring 155. Additionally, a potential Vdd is supplied to wiring 152. Note that the value of potential Vdd is higher than the potential V11. In addition, during period T13, a low-level signal was input via wiring 153. A high-level signal is later input via wiring 154, but this is not limited to that.

[0090] At this time, field-effect transistors 112 and 115 are turned ON. field-effect transistor 111, field-effect transistor 114, field-effect transistor When field-effect transistors 116, 117, and 118 are turned off ru.

[0091] Furthermore, the potential of the first gate in the field-effect transistor 113 corresponds to the value of the data signal. This causes the field-effect transistor 113 to turn on, and the field-effect transistor Current flows between the source and drain of the transistor 113.

[0092] Furthermore, in the light-emitting diode 140, a current is generated between the anode and cathode. As the current flows, the light-emitting diode 140 emits light.

[0093] For example, when operating the field-effect transistor 113 in the saturation region, the field-effect transistor The current value (Ids) flowing between the source and drain in TA113 is due to the field-effect transient. Regardless of the threshold voltage of sta 113, the determination is made according to the value of the data signal input to the first gate. Okay. Therefore, for example, when Vgs113 is greater than V11-V12, the field-effect transient When sta113 is turned on, current flows between the source and drain.

[0094] Furthermore, due to the degradation of the field-effect transistor 113, the so Even if the potential of the other side of the drain changes, the field-effect transistor 113 The first gate and the second gate in the capacitive element 121 and the capacitive element 1 Because of 22, between the first gate and source in the field-effect transistor 113 This can suppress changes in the voltage value.

[0095] Furthermore, a mobility correction period is provided between period T12 and period T13, and the field-effect transistor 11 The potential of the second gate in the field-effect transistor 113 is set according to the mobility of 3. This is also good. This suppresses the effects of variations in the mobility of the field-effect transistor 113. can.

[0096] The above is an explanation of an example of a driving method for the light-emitting device shown in Figure 5(A).

[0097] Furthermore, the field-effect transistors 111 to 12 of the semiconductor device shown in Figure 5(A) One or more of the sta118s may be P-channel transistors.

[0098] Next, as an example of the driving method for the light-emitting device in this embodiment, the driving method for the light-emitting device shown in Figure 6(A) An example of the operation method will be explained using the timing chart in Figure 6(B). The light-emitting device shown in Figure 3(A) has a light-emitting element 140 which is a light-emitting diode. Each of the field-effect transistors 111 to 118 is an N-channel type This is a light-emitting device in the case of a transistor. In this case, the light-emitting diode is the light-emitting element 140. The anode in the device is electrically connected to the other electrode of the pair of electrodes in the capacitive element 122. Furthermore, a potential Vx is applied to the cathode of the light-emitting diode 140. ru.

[0099] In the example of the driving method for the light-emitting device shown in Figure 6(A), as shown in Figure 6(B), during the period T21 Then, a high-level signal is input via wiring 153, and a low-level signal is input via wiring 154. A signal is input, a high-level signal is input via wiring 155, and a low-level signal is input via wiring 159. A level signal is input, and a high-level signal is input via wire 160. Also, wire 1 The potential V11 is supplied to 56, the potential V12 is supplied to wiring 157, and the potential V13 is supplied to wiring 158. It supplies power. At this time, the potential difference between potential V11 and potential V12 is the field-effect transistor 11 Assume that the potential V12 is greater than the threshold voltage of 3. Also, assume that the potential V12 is less than the potential Vx.

[0100] At this time, field-effect transistor 114, field-effect transistor 116, field-effect transistor The zista 117 and the field-effect transistor 118 are turned on, and the field-effect transistors The transistor 111 and the field-effect transistor 115 are turned off.

[0101] Furthermore, the second gate and drain of the field-effect transistor 113 become conductive. The potentials of the second gate and drain in the field-effect transistor 113 are The voltage becomes V13. As a result, the threshold voltage of the field-effect transistor 113 is determined according to the potential V13. It shifts in the negative direction.

[0102] Furthermore, the voltage between the gate and source of the field-effect transistor 113 is V11-V12 The value of V11-V12 is obtained from the threshold voltage of the field-effect transistor 113 at this time. It is large. As a result, the field-effect transistor 113 turns on.

[0103] Furthermore, during period T22, a high-level signal is input via wiring 153, and wiring 154 A low-level signal is input via this, and a low-level signal is input via wiring 155, A low-level signal is input via wire 159, and a high-level signal is input via wire 160. It also supplies potential V11 to wiring 156 and potential V12 to wiring 157.

[0104] At this time, field-effect transistor 114, field-effect transistor 116, and field-effect transistor When the transistor 117 turns on, the field-effect transistor 111 and the field-effect transistor The transistor 115 and the field-effect transistor 118 are turned off.

[0105] Furthermore, the field-effect transistor 113 remains in the ON state. A current flows between the source and drain of the zista 113, causing a field-effect transistor to be activated. The potential of the second gate in Zistor 113 changes. This causes the field-effect transistor The threshold voltage value at 113 shifts in the positive direction, and in field-effect transistor 113 The field-effect transistor 113 turns off when the threshold voltage becomes V11-V12 or higher. This results in obtaining threshold voltage data for the field-effect transistor 113.

[0106] Next, during period T23, a low-level signal is input via wiring 153, and wiring 154 A low-level signal is input via this, and a low-level signal is input via wiring 155, A high-level signal is input via wire 159, and a low-level signal is input via wire 160. It provides power. Additionally, a data signal is input via wiring 151.

[0107] At this time, field-effect transistor 111 turns on, and field-effect transistor 114 , field-effect transistor 115, field-effect transistor 116, field-effect transistor 1 17 and the field-effect transistor 118 are turned off.

[0108] At this time, the potential of the first gate in the field-effect transistor 113 is equal to the data signal (Vs It changes depending on the potential of (ig).

[0109] Next, during period T24, a low-level signal is input via wiring 153, and wiring 154 A high-level signal is input via wiring 155, and a low-level signal is input via wiring 155. A low-level signal is input via wire 159, and a low-level signal is input via wire 160. It provides power. Furthermore, it supplies potential Vdd via wiring 152. Note that the value of potential Vdd is... Assume that the position is higher than V11.

[0110] At this time, the field-effect transistor 115 turns on, and the field-effect transistor 111 , field-effect transistor 114, field-effect transistor 116, field-effect transistor 1 17 and the field-effect transistor 118 are turned off.

[0111] Also, the field-effect transistor 113 turns on, and the field-effect transistor 113 Current flows between the source and the drain.

[0112] Furthermore, in the light-emitting diode 140, a current is generated between the anode and cathode. As the current flows, the light-emitting diode 140 emits light.

[0113] For example, when operating the field-effect transistor 113 in the saturation region, the field-effect transistor The current value (Ids) flowing between the source and drain in TA113 is due to the field-effect transient. Regardless of the threshold voltage of sta113, the data signal (Vsig) input to the first gate It is determined by the value. Therefore, for example, when Vgs113 is greater than V11-V12, the electric field The effect transistor 113 turns on, and current flows between the source and drain.

[0114] Furthermore, due to the deterioration of the field-effect transistor 113, Even if the potential of the source and the other drain of the field-effect transistor changes, the field-effect transistor 1 In 13, the first gate and the second gate are in a floating state, and the capacitive element 121 and the capacitor Because of element 122, between the first gate and source in the field-effect transistor 113 This can suppress changes in the voltage value.

[0115] Furthermore, a mobility correction period is provided between period T23 and period T24, and the field-effect transistor 11 The potential of the second gate in the field-effect transistor 113 is set according to the mobility of 3. This is also good. This suppresses the effects of variations in the mobility of the field-effect transistor 113. can.

[0116] Furthermore, the field-effect transistors 111 to 12 of the semiconductor device shown in Figure 6(A) One or more of the sta118s may be P-channel transistors.

[0117] The above is an explanation of an example of a driving method for the light-emitting device shown in Figure 6(A).

[0118] As explained using Figures 5 and 6, in an example of the light-emitting device in this embodiment, the threshold voltage A period is set aside for acquiring voltage data, and the threshold voltage data of the field-effect transistor is acquired in advance. This allows the amount of current flowing between the source and drain of a field-effect transistor to be controlled by the field effect. Because it can be determined regardless of the threshold voltage of the field-effect transistor, This can suppress the effects of variations in threshold voltage. Also, it can suppress the effects of degradation of field-effect transistors. The impact can be mitigated.

[0119] Furthermore, in an example of the light-emitting device in this embodiment, a first gate and a second gate are provided. A field-effect transistor is used. With the above configuration, the field-effect transistor depresses Even with a single-type transistor, it is possible to obtain threshold voltage data for a field-effect transistor. Therefore, the threshold voltage of the field-effect transistor is shifted by the potential of the second gate. Because this is possible, the field-effect transistor is an N-channel type transistor, and the field-effect transistor The original threshold voltage of the transistor is negative and normally on, and it is a field-effect transistor. Even if the voltage between the first gate and source in a field-effect transistor is not negative, This is because it can be turned off. Therefore, in a field-effect transistor, The amount of current flowing between the drain and the tube is determined regardless of the threshold voltage of the field-effect transistor. Therefore, the effects of variations in the threshold voltage of the field-effect transistor can be suppressed.

[0120] Therefore, in the example of the light-emitting device in this embodiment, the source in the field-effect transistor Because the amount of current flowing between the capacitor and the drain can be controlled, malfunctions can be suppressed.

[0121] (Embodiment 3) In this embodiment, an example of the configuration of a light-emitting device equipped with a drive circuit will be described with reference to Figure 7.

[0122] The semiconductor device shown in Figure 7 includes a first drive circuit 901, a second drive circuit 902, and multiple generators. It includes an optical circuit 910.

[0123] The first drive circuit 901 has the function of controlling the light emission operation of the light emission circuit 910.

[0124] The first drive circuit 901 is configured using, for example, a shift register.

[0125] The second drive circuit 902 has the function of controlling the light emission operation of the light emission circuit 910.

[0126] The second drive circuit 902 is configured using, for example, a shift register, an analog switch, etc. It can be done.

[0127] Multiple light-emitting circuits 910 are arranged in a matrix direction in the light-emitting section 900. As such, the configuration of the light-emitting device shown in Embodiment 2 above can be applied. In the light-emitting device shown in Embodiment 2, the gate of the field-effect transistor is electrically connected to the wire The line is supplied with a signal from the first drive circuit 901. Also, the light-emitting device shown in Embodiment 2 The wiring to which the data signal is input is supplied with the data signal from the second drive circuit 902. It will be done.

[0128] The first drive circuit 901 may be provided on the same substrate as the light-emitting circuit 910.

[0129] The above is a description of the example configuration of the light-emitting device shown in Figure 7.

[0130] As explained with reference to Figure 7, in an example of the light-emitting device in this embodiment, the first drive circuit The second drive circuit can control the light emission operation of the light emission circuit.

[0131] (Embodiment 4) In this embodiment, the field-effect transistor in the semiconductor device or light-emitting device of the above embodiment Let's explain an example.

[0132] An example of the structure of a field-effect transistor in this embodiment will be explained with reference to Figure 8.

[0133] The field-effect transistor shown in Figure 8(A) has a conductive layer 40 on top of the element formation layer 400_A. 1_A, insulating layer 402_A, semiconductor layer 403_A, conductive layer 405a_A, conductive layer It includes 405b_A and insulating layer 406.

[0134] Furthermore, the field-effect transistor shown in Figure 8(B) has a conductive layer on top of the element formation layer 400_B. Semiconductor layer 4 including layer 401_B, insulating layer 402_B, and regions 404a and 404b It includes 03_B, conductive layer 405a_B, conductive layer 405b_B, and insulating layer 407.

[0135] Furthermore, each component shown in Figures 8(A) and 8(B) will be explained.

[0136] The element-forming layer 400_A and the element-forming layer 400_B are, for example, an insulating layer, or an insulating layer. A substrate with a surface can be used.

[0137] Conductive layer 401_A and conductive layer 401_B are connected to the gate of the field-effect transistor. It has the function of being a gate. Furthermore, the layer that functions as the gate of a field-effect transistor is a gate. Also called gate electrodes or gate wiring.

[0138] Examples of conductive layers 401_A and 401_B include molybdenum, magnesium, and chlorine. Tan, chromium, tantalum, tungsten, aluminum, copper, neodymium, or scan Using layers (single or multilayer) of metallic materials such as zinc, or alloy materials mainly composed of these materials. It is possible.

[0139] Insulating layer 402_A and insulating layer 402_B are, respectively, gate insulating layers of the field-effect transistor. It functions as a marginal layer.

[0140] For example, the insulating layer 402_A and insulating layer 402_B are silicon oxide, silicon nitride, Silicon oxide nitride, silicon nitride, aluminum oxide, aluminum nitride, silicon oxide nitride Materials such as aluminum, aluminum nitride, hafnium oxide, or lanthanum oxide Layers (single layer or multi-layer) can be used.

[0141] Furthermore, the insulating layers 402_A and 402_B may be, for example, the first element in the periodic table. An insulating layer made of a material containing Group 3 elements and oxygen can also be used.

[0142] Examples of materials containing Group 13 elements and oxygen include gallium oxide and aluminum oxide. Examples include aluminum gallium oxide and aluminum gallium oxide. Aluminum gallium is defined as having a higher aluminum content (atomic %) than gallium content (atomic %). This refers to a substance with a high gallium content (%), and gallium aluminum oxide is a substance with a high gallium content (%). This refers to a substance whose aluminum content (atomic percentage) is greater than the aluminum content (atomic percentage).

[0143] Semiconductor layer 403_A and semiconductor layer 403_B are each the channel of a field-effect transistor. The layer in which channels are formed (also called the channel-forming layer), that is, the layer having a channel-forming region. It has the function of a semiconductor. Applicable to semiconductor layer 403_A and semiconductor layer 403_B. For example, semiconductors containing elements from Group 14 of the periodic table (such as silicon). For example, the silicon semiconductor layer can be a single-crystal semiconductor layer or a polycrystalline semiconductor layer. It may be a layer, a microcrystalline semiconductor layer, or an amorphous semiconductor layer.

[0144] Furthermore, semiconductors applicable to semiconductor layer 403_A and semiconductor layer 403_B include, for example, It has a wider band gap than silicon, for example, 2 eV or more, preferably 2.5 eV or more. Preferably, a semiconductor with a voltage of 3 eV or higher can be used. For example, semiconductor layer 403_ Semiconductors applicable to A and semiconductor layer 403_B include In-based oxides (e.g., in oxide). (e.g., zinc), Sn-based oxides (e.g., tin oxide), or Zn-based oxides (e.g., nitrile oxide) Oxide semiconductors such as metal oxides (e.g., lead) can be used.

[0145] Furthermore, the above metal oxides include, for example, quaternary metal oxides, ternary metal oxides, and binary metal oxides. Metal oxides, such as metal oxides, can also be used. Furthermore, the above-mentioned oxide semiconductor can be applied. Possible metal oxides include gallium as a stabilizer to reduce variations in properties. It may also be. Furthermore, metal oxides applicable as the above oxide semiconductor are the above stabilizer The sizing agent may contain tin. Also, a metallic acid applicable as the above oxide semiconductor may be used. The oxide may contain hafnium as the stabilizer mentioned above. The metal oxides applicable as conductors include aluminum as the stabilizer mentioned above. It may also be the metal oxide that can be used as the above oxide semiconductor. As examples, lanthanides include lanthanum, cerium, praseodymium, neodymium, and samarium. Europium, Gadolinium, Terbium, Dysprosium, Holmium, Elviol It may contain one or more of the following: thulium, ytterbium, and lutetium. Furthermore, the metal oxide applicable as the above-mentioned oxide semiconductor may also contain silicon oxide. .

[0146] For example, quaternary metal oxides include, for instance, In-Sn-Ga-Zn oxides and In-H f-Ga-Zn oxides, In-Al-Ga-Zn oxides, In-Sn-Al-Zn oxides Using oxides, In-Sn-Hf-Zn oxides, In-Hf-Al-Zn oxides, etc. It is possible.

[0147] Furthermore, examples of ternary metal oxides include In-Ga-Zn oxides and In-Sn-Zn oxides. In-Al-Zn oxides, Sn-Ga-Zn oxides, Al-Ga-Zn oxides Oxides, Sn-Al-Zn oxides, or In-Hf-Zn oxides, In-La-Zn In-Ce-Zn oxides, In-Pr-Zn oxides, In-Nd-Zn oxides Oxides, In-Sm-Zn oxides, In-Eu-Zn oxides, In-Gd-Zn acids In-Tb-Zn oxides, In-Dy-Zn oxides, In-Ho-Zn oxides Materials, In-Er-Zn oxides, In-Tm-Zn oxides, In-Yb-Zn oxides Alternatively, an In-Lu-Zn ​​oxide can be used.

[0148] Furthermore, examples of binary metal oxides include In-Zn oxides, Sn-Zn oxides, and A l-Zn oxides, Zn-Mg oxides, Sn-Mg oxides, In-Mg oxides, I n-Sn oxides or In-Ga oxides can be used.

[0149] In addition, as an oxide semiconductor, InLO3(ZnO) m (where m is a number greater than 0) It is also possible to use materials such as InLO3(ZnO). m L is Ga, Al, Mn, and This indicates one or more metallic elements selected from Co.

[0150] For example, as an oxide semiconductor, In:Ga:Zn = 1:1:1 (= 1 / 3:1 / 3:1 / 3) or In:Ga:Zn=2:2:1 (=2 / 5:2 / 5:1 / 5) -Ga-Zn oxides and oxides with similar compositions can be used. As a conductor, In:Sn:Zn = 1:1:1 (= 1 / 3:1 / 3:1 / 3), In:S n:Zn=2:1:3 (=1 / 3:1 / 6:1 / 2) or In:Sn:Zn=2:1:5 In-Sn-Zn oxides with an atomic ratio of (=1 / 4:1 / 8:5 / 8) and their composition in the vicinity Oxides can be used. For example, the composition of the semiconductor layer to be formed will be such that It is preferable to form the semiconductor layer using a sputtering target with a specific composition.

[0151] Furthermore, when an oxide semiconductor is used for semiconductor layer 403_A and semiconductor layer 403_B, the semiconductor The body layers may be single crystals, polycrystalline (also called polycrystalline), or amorphous. stomach.

[0152] Furthermore, the semiconductor layers 403_A and 403_B are CAAC-OS(C Ax is Aligned Crystalline Oxide Semiconductor An oxide semiconductor layer containing (or) may also be used.

[0153] CAAC-OS is a multiphase structure consisting of crystalline and amorphous regions, and the crystals in the crystalline region... Furthermore, the c-axis is perpendicular to the surface or surface on which the semiconductor layer is formed, and when viewed from a direction perpendicular to the ab-plane, three Having a horn-shaped or hexagonal atomic arrangement, the metal atoms are layered or gold when viewed from a direction perpendicular to the c-axis. This refers to a structure in which group atoms and oxygen atoms are arranged in layers. Therefore, CAAC-OS is complete. It is neither a perfect single crystal nor a perfect amorphous material. When CAAC-OS has a plurality of crystal regions, the crystals in the plurality of crystal regions may have different orientations of the a-axis and the b-axis.

[0154] Also, the crystal size of the crystal regions in CAAC-OS is on the order of several nm to several tens of nm when viewed accumulated. However, in the observation of CAAC-OS by a transmission electron microscope (also referred to as TEM), the boundary between the crystal region and the amorphous region in CAAC-OS is not always clear. Also, in CAAC-OS, grain boundaries are not confirmed. Therefore, since CAAC-OS includes regions without grain boundaries, the decrease in electron mobility due to grain boundaries is small.

[0155] Also, in CAAC-OS, the distribution of crystal regions may not be uniform. For example, when an oxide semiconductor layer including CAAC-OS is formed by crystal growth from the surface side of an oxide semiconductor layer, in the vicinity of the surface of the oxide semiconductor layer in the CAAC-OS portion, the proportion of the crystal region becomes high, and in the vicinity of the formed surface of the oxide semiconductor layer in the CAAC-OS portion, the proportion of the amorphous region may become high.

[0156] Also, since the c-axis of the crystal in the crystal region of CAAC-OS is perpendicular to the formed surface or the surface of the oxide semiconductor layer in the CAAC-OS portion, the direction of the c-axis may be different depending on the shape of the oxide semiconductor layer in the CAAC-OS portion (the cross-sectional shape of the formed surface or the cross-sectional shape of the surface). Note that the c-axis in the crystal region of CAAC-OS is substantially perpendicular to the formed surface or the surface of the oxide semiconductor layer in the CAAC-OS portion.

[0157] Also, in CAAC-OS, a part of oxygen may be substituted with nitrogen.

[0158] In addition, CAAC-OS has a composition in the crystal region of In 1+σ Ga 1-σ O3(ZnO) M (where 0 < σ < 1, M is a number from 1 to 3), and the overall composition is In P Ga Q O R ( ZnO) M (where 0 < P < 2, 0 < Q < 2, M is a number from 1 to 3), and it is preferably represented by this.

[0159] When using an oxide semiconductor layer containing CAAC-OS, the layer in contact with the lower side of the oxide semiconductor layer is preferably flat. For example, the average surface roughness of the layer in contact with the lower side of the oxide semiconductor layer containing CAAC-OS is preferably 1 nm or less, and more preferably 0.3 nm or less. By improving the flatness of the layer in contact with the lower side of the oxide semiconductor layer containing CAAC-OS, the mobility can be improved to be higher than that of an oxide semiconductor that is entirely amorphous. For example, by one or more of chemical mechanical polishing (CMP) treatment and plasma treatment, the layer in contact with the lower side of the oxide semiconductor layer containing CAAC-OS can be planarized. At this time, the plasma treatment includes a treatment of sputtering the surface with a rare gas ion and a treatment of etching the surface using an etching gas .

[0160] By using an oxide semiconductor layer containing CAAC-OS in a field effect transistor, the variation in the electrical characteristics of the field effect transistor due to irradiation with visible light or ultraviolet light is suppressed, so a highly reliable field effect transistor can be obtained.

[0161] Furthermore, in regions 404a and 404b shown in FIG. 8(B), dopants are added and the electricity It functions as the source or drain of a field-effect transistor. As a dopant, For example, elements in Group 13 of the periodic table (such as boron), and elements in Group 15 of the periodic table. The elements (e.g., nitrogen, phosphorus, and arsenic, one or more of them), and noble gas elements (e.g., helium) One or more of the following can be used: um, argon, and xenon. Oh, the region that functions as the source of a field-effect transistor is also called the source region. The region that functions as the drain of a field-effect transistor is also called the drain region. By adding dopants to regions 404a and 404b, the resistance between them and the conductive layer is reduced. It can be done easily.

[0162] Conductive layer 405a_A, conductive layer 405b_A, conductive layer 405a_B, and conductive layer 405b_ Each of B functions as either the source or drain of a field-effect transistor. Oh, the layer that functions as the source of a field-effect transistor is the source electrode or source wiring. Also known as the layer that functions as the drain of a field-effect transistor, the drain electrode or Also called drain wiring.

[0163] Conductive layer 405a_A, conductive layer 405b_A, conductive layer 405a_B, and conductive layer 405b_ Examples of B include aluminum, magnesium, chromium, copper, tantalum, titanium, and molybdenum. Metallic materials such as butene or tungsten, or compounds mainly composed of these metallic materials A layer (single layer or multi-layer) of gold material can be used.

[0164] Also, conductive layer 405a_A, conductive layer 405b_A, conductive layer 405a_B, and conductive layer 40 As 5b_B, a layer containing a conductive metal oxide can also be used. As the conductive metal oxide, for example, indium oxide, tin oxide, zinc oxide, indium tin oxide, or indium zinc oxide can be used. Note that the conductive metal oxide applicable to the conductive layer 405a_A, the conductive layer 405b_A, the conductive layer 405a_B, and the conductive layer 405b_B may contain silicon oxide. For the insulating layer 406, for example, a layer (single layer or laminate) of a material applicable to the insulating layer 402_A can be used.

[0165] For the insulating layer 407, for example, a layer (single layer or laminate) of a material applicable to the insulating layer 402_A can be used.

[0166] When an oxide semiconductor layer is used as the semiconductor layer 403_A or the semiconductor layer 403_B, for example, dehydration and dehydrogenation are performed to remove impurities such as hydrogen, water, hydroxyl groups, or hydrides ( also referred to as hydrogen compounds) in the oxide semiconductor layer, and oxygen is supplied to the oxide semiconductor layer,

[0167] so that the oxide semiconductor layer can be purified to a high purity. For example, by using a layer containing oxygen as the layer adjacent to the oxide semiconductor layer and performing heat treatment, the oxide semiconductor layer can be purified to a high purity. For example, heat treatment is performed at a temperature of 400°C or higher and 750°C or lower, or at a temperature of 400°C or higher and lower than the distortion point of the substrate. Further, heat treatment may be performed in a subsequent process. At this time, as the heat treatment apparatus for performing the above heat treatment, for example, an electric furnace or a device that heats the object to be treated by heat conduction or heat radiation from a heating element such as a resistance heating element can be used. For example, GRTA (G

[0168] ​ (as Rapid Thermal Anneal) device or LRTA (Lamp Ra RTA (Rapid Thermal Annealing) devices such as pid Thermal Annealing (RTA) An LRTA device can be used. For example, a halogen lamp Metal halide lamps, xenon arc lamps, carbon arc lamps, high-pressure sodium The radiation of light (electromagnetic waves) emitted from lamps such as mercury lamps or high-pressure mercury lamps can cause damage to the affected area. It is a device for heating substances. Furthermore, a GRTA device performs heat treatment using high-temperature gas. It is a device. The high-temperature gas can be, for example, a noble gas, or a gas that reacts with the object being processed through heat treatment. An inert gas that does not react (e.g., nitrogen) can be used.

[0169] Furthermore, after the above heat treatment, the temperature is maintained or reduced from that temperature. In the process, high-purity oxygen gas, high-purity N2O gas, and You may also introduce ultra-dry air (an atmosphere with a dew point of -40°C or lower, preferably -60°C or lower). In this case, it is preferable that the oxygen gas or N2O gas does not contain water, hydrogen, etc. Furthermore, the purity of the oxygen gas or N2O gas introduced into the heating apparatus should be 6N or higher, preferably 7N. The impurity concentration in oxygen gas or N2O gas should be 1 ppm or less, preferably above N, i.e., 1 ppm or less. It is preferable to keep it below 0.1 ppm. Oxides are produced by the action of oxygen gas or N2O gas. Oxygen is supplied to the semiconductor layer, reducing defects caused by oxygen deficiency in the oxide semiconductor layer. Furthermore, the introduction of the above-mentioned high-purity oxygen gas, high-purity N2O gas, or ultra-dry air is performed by heating. This can be done during processing.

[0170] Furthermore, when forming an oxide semiconductor layer containing CAAC-OS, sputtering is used. The temperature of the layer on which the oxide semiconductor film is formed is preferably 100°C to 600°C. The oxide is prepared at a temperature of 150°C to 550°C, more preferably 200°C to 500°C. A semiconductor film is formed. By increasing the temperature of the layer to be formed, an oxide semiconductor film is formed. As a result, the atomic arrangement in the oxide semiconductor film is organized and densely packed, and polycrystalline or CAAC-OS is formed. It becomes easier to form. Furthermore, by depositing the film in an oxygen gas atmosphere, excess noble gases and other substances are removed. Because it does not contain atoms, polycrystalline or CAAC-OS forms easily. However, acid A mixed atmosphere of elementary gases and noble gases is also acceptable, in which case the proportion of oxygen gas should be 30% by volume or more. Preferably, it shall be 50% by volume or more, and more preferably 80% by volume or more.

[0171] By using a highly purified oxide semiconductor layer in a field-effect transistor, The carrier density of the body layer is 1 × 10⁻⁶ 14 / cm 3 Less than 1 × 10 12 / cm 3 less than More preferably 1 × 10 11 / cm 3 It can be reduced to less than 1 μm of channel width. The off-current of the field-effect transistor is 10aA (1 × 10 -17 A) The following, and furthermore 1 aA(1×10 -18 A) Below, and furthermore, 10zA(1×10 -20 A) The following, and furthermore 1zA(1×10 -21 A) Below, and furthermore, 100yA (1 × 10 -22 A) Can be done below The off-current of a field-effect transistor is better as low as possible, but in this embodiment... The lower limit of the off-current of a field-effect transistor is approximately 10 -30 It is estimated to be A / μm ru.

[0172] As explained with reference to Figure 8, an example of a field-effect transistor in this embodiment is shown above. By applying this to a field-effect transistor in a semiconductor device or light-emitting device, It can be used to construct a conductive device or a light-emitting device.

[0173] (Embodiment 5) In this embodiment, an example of the structure of a light-emitting device will be described. Assume the configuration is the circuit shown in Figure 2(A).

[0174] The light-emitting device in this embodiment is equipped with semiconductor elements such as field-effect transistors. A substrate (also called an active matrix substrate), a second substrate, and the first substrate and the second It includes a light-emitting element provided between the substrates.

[0175] First, Figure 9 shows an example of the structure of the active matrix substrate in the light-emitting device of this embodiment. This will be explained using Figure 9. This is a diagram showing an example structure. Figure 9(A) is a schematic plan view. Figure 9(B) is... Figure 9(A) is a schematic cross-sectional view of line segment AB. Figure 9(C) is a schematic cross-sectional view of line segment AB in Figure 9(A). This is a schematic cross-sectional view of line segment CD. Note that in Figure 9, the components differ from the actual dimensions. Includes. Also, for convenience, Figure 9(B) shows a portion of the cross-section of line segment AB in Figure 9(A). It is omitted. Also, in Figure 9(C), a part of the cross-section of line segment CD in Figure 9(A) is shown. It's omitted.

[0176] The active matrix substrate shown in Figure 9 comprises a substrate 500 and conductive layers 511a to 51 1h, insulating layer 512, semiconductor layer 513a to semiconductor layer 513h, conductive layer 515a It includes a conductive layer 515l, an insulating layer 516, a conductive layer 517a, and a conductive layer 517b.

[0177] Each of the conductive layers 511a to 511h is provided on one plane of the substrate 500.

[0178] The conductive layer 511a is, for example, in the field-effect transistor 111 of the light-emitting device shown in Figure 2(A). Gate, gate in field-effect transistor 114, field-effect transistor 116 The gate in the field-effect transistor 117, and the wiring 153 It has a function.

[0179] The conductive layer 511b is, for example, connected to the field-effect transistor 112 of the light-emitting device shown in Figure 2(A). Function as a gate, gate in field-effect transistor 115, and wiring 154 It holds.

[0180] The conductive layer 511c functions, for example, as wiring 156 in the light-emitting device shown in Figure 2(A). .

[0181] The conductive layer 511d is, for example, located on the field-effect transistor 113 of the light-emitting device shown in Figure 2(A). It functions as the first gate.

[0182] The conductive layer 511e is, for example, a pair of electrical components in the capacitive element 121 of the light-emitting device shown in Figure 2(A). It functions as the other electrode and as the other electrode of the pair of electrodes in the capacitive element 122.

[0183] The conductive layer 511f functions, for example, as wiring 157 in the light-emitting device shown in Figure 2(A). .

[0184] The conductive layer 511g is, for example, in the field-effect transistor 118 of the light-emitting device shown in Figure 2(A). It functions as a gate and wiring 155.

[0185] The conductive layer 511h functions, for example, as wiring 158 in the light-emitting device shown in Figure 2(A). .

[0186] The insulating layer 512 is provided on the conductive layers 511a to 511h. For example, the field-effect transistors 111 to the field-effect transistors of the light-emitting device shown in Figure 2(A) The gate insulating layer in sta 118, and the induction in capacitive elements 121 and 122. It functions as an electrochemical layer.

[0187] The semiconductor layer 513a is superimposed on the conductive layer 511a with the insulating layer 512 in between. a is, for example, the channel in the field-effect transistor 111 of the light-emitting device shown in Figure 2(A). It functions as a cambium.

[0188] The semiconductor layer 513b is superimposed on the conductive layer 511b with the insulating layer 512 in between. b is, for example, the channel in the field-effect transistor 112 of the light-emitting device shown in Figure 2(A). It functions as a cambium.

[0189] The semiconductor layer 513c is superimposed on the conductive layer 511a with the insulating layer 512 in between. c is, for example, the channel in the field-effect transistor 116 of the light-emitting device shown in Figure 2(A). It functions as a cambium.

[0190] The semiconductor layer 513d is superimposed on the conductive layer 511d with the insulating layer 512 in between. d is, for example, the channel in the field-effect transistor 113 of the light-emitting device shown in Figure 2(A). It functions as a cambium.

[0191] The semiconductor layer 513e is superimposed on the conductive layer 511b with the insulating layer 512 in between. e is, for example, the channel in the field-effect transistor 115 of the light-emitting device shown in Figure 2(A). It functions as a cambium.

[0192] The semiconductor layer 513f is superimposed on the conductive layer 511a with the insulating layer 512 in between. f is, for example, the channel in the field-effect transistor 117 of the light-emitting device shown in Figure 2(A). It functions as a cambium.

[0193] The semiconductor layer 513g is superimposed on the conductive layer 511a with the insulating layer 512 in between. g is, for example, the channel in the field-effect transistor 114 of the light-emitting device shown in Figure 2(A). It functions as a cambium.

[0194] The semiconductor layer 513h is superimposed on the conductive layer 511g with the insulating layer 512 in between. h is, for example, the channel in the field-effect transistor 118 of the light-emitting device shown in Figure 2(A). It functions as a cambium.

[0195] The conductive layer 515a is electrically connected to the semiconductor layer 513a. The conductive layer 515a is, for example, The source and drain of the field-effect transistor 111 in the light-emitting device shown in Figure 2(A) On the other hand, it also functions as wiring 151.

[0196] The conductive layer 515b is electrically connected to the semiconductor layer 513a and the semiconductor layer 513b. The conductive layer 515b is superimposed on the conductive layer 511e with the insulating layer 512 in between. For example, the source and in the field-effect transistor 111 of the light-emitting device shown in Figure 2(A) The other side of the drain, one side of the source and drain in the field-effect transistor 112, and It functions as one of a pair of electrodes in the capacitive element 121.

[0197] The conductive layer 515c is electrically connected to the semiconductor layer 513c. Furthermore, the conductive layer 515c is An opening provided through the insulating layer 512 is electrically connected to the conductive layer 511c. The conductive layer 515c is, for example, connected to the field-effect transistor 116 of the light-emitting device shown in Figure 2(A). It functions as either a source or a drain.

[0198] The conductive layer 515d is electrically connected to the semiconductor layer 513b. Furthermore, the conductive layer 515d is It is superimposed on the semiconductor layer 513c. Furthermore, the conductive layer 515d is provided penetrating the insulating layer 512. The conductive layer 511d is electrically connected at the opening. The conductive layer 515d is, for example, shown in Figure In addition to the source and drain of the field-effect transistor 112 of the light-emitting device shown in 2(A), One side, and the other function of source and drain in field-effect transistor 116. It holds.

[0199] The conductive layer 515e is electrically charged to the semiconductor layer 513d, semiconductor layer 513e, and semiconductor layer 513g. They are connected. The conductive layer 515e is, for example, the field-effect transistor of the light-emitting device shown in Figure 2(A). In the zista 113, one of the source and drain, and in the field-effect transistor 114... One of the source and drain, and the source and drain in the field-effect transistor 115 It functions as the other side of the same coin.

[0200] The conductive layer 515f is electrically connected to the semiconductor layer 513d. Furthermore, the conductive layer 515f is An opening provided through the insulating layer 512 is electrically connected to the conductive layer 511e. The conductive layer 515f is connected to, for example, the field-effect transistor 113 of the light-emitting device shown in Figure 2(A). It functions as both a source and a drain.

[0201] The conductive layer 515g is electrically connected to the semiconductor layer 513e. The conductive layer 515g is, for example, The source and drain of the field-effect transistor 115 in the light-emitting device shown in Figure 2(A) On the other hand, it also functions as wiring 152.

[0202] The conductive layer 515h is electrically connected to the semiconductor layer 513g. Furthermore, the conductive layer 515h is... The conductive layer 511e is superimposed with the insulating layer 512 in between. The conductive layer 515h is, for example, shown in Figure 2(A). The source and drain of the field-effect transistor 114 of the light-emitting device shown, and It functions as one of a pair of electrodes in the capacitive element 122.

[0203] The conductive layer 515i is electrically connected to the semiconductor layer 513h. Furthermore, the conductive layer 515i is An opening provided through the insulating layer 512 is electrically connected to the conductive layer 511h. The conductive layer 515i is connected to, for example, the field-effect transistor 118 of the light-emitting device shown in Figure 2(A). It functions as either a source or a drain.

[0204] The conductive layer 515j is electrically connected to the semiconductor layer 513h. The conductive layer 515j is, for example, The source and drain of the field-effect transistor 118 in the light-emitting device shown in Figure 2(A) It also has the function of the other side.

[0205] The conductive layer 515k is electrically connected to the semiconductor layer 513f. Furthermore, the conductive layer 515k is... An opening provided through the insulating layer 512 is electrically connected to the conductive layer 511f. The conductive layer 515k is, for example, connected to the field-effect transistor 117 of the light-emitting device shown in Figure 2(A). It functions as either a source or a drain.

[0206] The conductive layer 515l is electrically connected to the semiconductor layer 513f. Furthermore, the conductive layer 515l is An opening provided through the insulating layer 512 is electrically connected to the conductive layer 511e. The conductive layer 515l is, for example, connected to the field-effect transistor 117 of the light-emitting device shown in Figure 2(A). It functions as both a source and a drain.

[0207] The insulating layer 516 consists of semiconductor layers 513a to 513h and conductive layers 515a to 513h. It is installed on top of layer 515l.

[0208] The conductive layer 517a is superimposed on the semiconductor layer 513d with the insulating layer 516 in between. 17a is an opening provided through the insulating layer 516, and the conductive layer 515h and the conductive layer It is electrically connected to 515j. The conductive layer 517a is, for example, in the light-emitting device shown in Figure 2(A). It functions as a second gate in the field-effect transistor 113.

[0209] The conductive layer 517b penetrates the insulating layer 516 and is connected to the conductive layer 515f at the opening. It is electrically connected.

[0210] Furthermore, an example of the structure of the light-emitting device in this embodiment will be explained with reference to Figure 10. Figure 1 Figure 0 is a schematic cross-sectional view showing an example of the structure of the light-emitting device in this embodiment. The light-emitting element in the light-emitting device has a structure that emits light in the upward direction, but it is not limited to this. Alternatively, the structure may emit light downwards.

[0211] The light-emitting device shown in Figure 10, in addition to the active matrix substrate shown in Figure 9, has an insulating layer 518 and , conductive layer 519, insulating layer 521, light-emitting layer 522, conductive layer 523, substrate 524, It includes a colored layer 525, an insulating layer 526, and an insulating layer 527.

[0212] The insulating layer 518 is provided on top of the insulating layer 516, the conductive layer 517a, and the conductive layer 517b. .

[0213] The conductive layer 519 is provided on top of the insulating layer 518. The conductive layer 517b is electrically connected at the opening provided through it. 9 is, for example, the anode and cathode of the light-emitting element 140 shown in Figure 2(A). To have the ability.

[0214] The insulating layer 521 is provided on top of the conductive layer 519.

[0215] The light-emitting layer 522 is electrically connected to the conductive layer 519 at an opening provided in the insulating layer 521. The light-emitting layer 522 functions as the light-emitting layer of the light-emitting element 140 shown in Figure 2(A), for example. It holds.

[0216] The conductive layer 523 is electrically connected to the light-emitting layer 522. The conductive layer 523 is, for example, shown in Figure 2(A It functions as the other half of the anode and cathode of the light-emitting element 140 shown in ).

[0217] In this embodiment, an example of a light-emitting device is provided, in which the structure of the light-emitting element emits light in the upward direction. While the structure is designed to do this, it is not limited to this, and it is also possible to create a structure that emits light downwards. Cut.

[0218] The colored layer 525 transmits light of a specific wavelength from the light-emitting layer 522 to the substrate. It is provided on one of the planes of 524.

[0219] The insulating layer 526 is provided on one plane of the substrate 524, with the colored layer 525 in between.

[0220] The insulating layer 527 is provided between the insulating layer 526 and the conductive layer 523.

[0221] Furthermore, each component of the light-emitting device described using Figures 9 and 10 will be explained.

[0222] For substrates 500 and 524, for example, glass substrates or plastic substrates can be used. This can be done. Note that it is not always necessary to provide substrates 500 and 524.

[0223] Examples of conductive layers 511a to 511h include conductive layer 401_A shown in Figure 8(A). A layer (single layer or laminate) of the applicable material can be used.

[0224] The insulating layer 512 can be, for example, a layer of material applicable to the insulating layer 402_A shown in Figure 8(A). (Single layer or laminated) can be used.

[0225] For example, semiconductor layers 513a to 513h are semiconductor layer 40 shown in Figure 8(A). A layer of material applicable to 3_A can be used.

[0226] Examples of conductive layers 515a to 515l include conductive layer 405a_ shown in Figure 8(A). A and a layer (single layer or multilayer) of a material applicable to conductive layer 405b_A can be used. .

[0227] As the insulating layer 516, for example, a layer of material applicable to the insulating layer 406 shown in Figure 8(A) (single Layers or stacks can be used.

[0228] Examples of conductive layers 517a and 517b include conductive layers 511a to 511h. A layer (single layer or laminate) of the applicable material can be used.

[0229] As the insulating layer 518, for example, a layer (single layer or laminate) of a material applicable to the insulating layer 512 may be used. It is possible to be there.

[0230] The conductive layer 519 is, for example, a layer of material applicable to conductive layers 511a to 511h. (Single layer or laminated) can be used.

[0231] For example, an organic insulating layer or an inorganic insulating layer can be used as the insulating layer 521.

[0232] The light-emitting layer 522 is a layer that emits light of a specific color. The light-emitting layer 522 can be: For example, a light-emitting layer can be used that uses a light-emitting material that emits light of a specific color. The light-emitting layer 522 is constructed using a stack of light-emitting layers that emit light exhibiting different color characteristics from each other. This may be done. As the light-emitting material, an electroluminescent material such as a fluorescent material or a phosphorescent material may be used. The material can be used. In addition, the material can be made to contain multiple electroluminescent materials. The light-emitting material may be composed of such materials. For example, a layer of fluorescent material that emits blue light, or an orange layer A layer of first phosphorescent material that emits light, and a second phosphorescent material that emits orange light. A light-emitting layer 522 that emits white light may be formed by stacking the layers. Examples of lectroluminescent materials include organic electroluminescent materials or inorganic electroluminescent materials. Lorluminescent materials can be used. In addition to the above-mentioned light-emitting layer, for example, hole injection can be used. The light-emitting layer is configured by providing one or more layers, a hole transport layer, an electron transport layer, and an electron injection layer. That's fine.

[0233] The conductive layer 523 is, for example, a layer of material applicable to conductive layers 511a to 511h. Among these, a layer (single layer or multi-layer) of light-transmitting material can be used.

[0234] The colored layer 525 can be, for example, light with a wavelength that produces red light, light with a wavelength that produces green light, or blue light. A layer that transmits light of a wavelength exhibiting this characteristic and contains dyes or pigments can be used. As 525, it transmits light that exhibits the color cyan, magenta, or yellow, and is a dye or pigment. A layer containing the above may also be used. For example, the colored layer 525 may be used in photolithography, printing, etc. Formed using methods such as inkjet printing, electrodeposition, or electrophotography. For example, By using the inkjet method, it is possible to manufacture at room temperature, at low vacuum, or on large substrates. It can be manufactured. Furthermore, it can be manufactured without using a resist mask, thus reducing manufacturing costs and production costs. The number of steps can be reduced.

[0235] For example, the insulating layer 526 may be a layer (single layer or laminate) of a material applicable to the insulating layer 512. It is possible to have it. Note that the insulating layer 526 does not necessarily have to be provided, but the insulating layer 526 By providing this feature, the intrusion of impurities from the colored layer 525 into the light-emitting element can be suppressed.

[0236] The insulating layer 527 may be, for example, a layer (single layer or multilayer) of a material applicable to the insulating layer 512. A layer of resin material can be used.

[0237] As explained using Figures 9 and 10, in an example of the light-emitting device in this embodiment, A light-emitting element that emits light of a certain color, and a specific wavelength of the light emitted by the light-emitting element. A light-transmitting colored layer is provided. This allows light exhibiting different colors to be emitted. Because it is possible to display a color image without forming multiple light-emitting elements, the manufacturing process is simplified and the yield is reduced. This can improve efficiency. For example, it is possible to fabricate light-emitting elements without using a metal mask. Therefore, the manufacturing process becomes easier. Furthermore, it is possible to improve the contrast of the image.

[0238] (Embodiment 6) In this embodiment, an example of an electronic device will be described.

[0239] An example of the configuration of the electronic device in this embodiment is shown in Figures 11(A) to 11(C), and Figure This will be explained using Figure 12. Figures 11(A) to 11(C) and Figure 12 are used in this embodiment. This is a schematic diagram illustrating an example of the configuration of electronic equipment.

[0240] The electronic device shown in Figure 11(A) is an example of a portable information terminal. The end comprises a housing 1001a and a display unit 1002a provided on the housing 1001a. .

[0241] Note that the side 1003a of the housing 1001a has a connection terminal for connecting to an external device, Figure 11 (A) may include one or more buttons for operating the portable information terminal shown in (A). stomach.

[0242] The portable information terminal shown in Figure 11(A) has a CPU and main memory inside the casing 1001a. This includes an interface for sending and receiving signals between external devices and the CPU and main memory, and It is equipped with an antenna for transmitting and receiving signals with the equipment. Furthermore, inside the housing 1001a, One or more integrated circuits with specific functions may be provided.

[0243] The portable information terminals shown in Figure 11(A) include, for example, telephones, e-readers, and personal computers. It has the function of a game machine, and one or more game machines.

[0244] The electronic device shown in Figure 11(B) is an example of a stationary information terminal. The information terminal comprises a housing 1001b and a display unit 1002b provided on the housing 1001b. To prepare.

[0245] The display unit 1002b can also be provided on the deck portion 1008 of the housing 1001b. ru.

[0246] Furthermore, the stationary information terminal shown in Figure 11(B) has a CPU and a main unit inside the enclosure 1001b. Memory and an interface for sending and receiving signals between external devices, the CPU, and main memory. The enclosure 1001c contains one or more integrated circuits having specific functions. Multiple units may be provided. Furthermore, the stationary information terminal shown in Figure 11(B) can transmit and receive signals to and from the outside. An antenna may be provided for this purpose.

[0247] Furthermore, in the stationary information terminal shown in Figure 11(B), on the side 1003b of the housing 1001b The device may be provided with one or more ticket output units for printing tickets, coin slots, and banknote slots. .

[0248] The stationary information terminal shown in Figure 11(B) is, for example, an automated teller machine or a ticket ordering system. It functions as an information and communication terminal (also called a multimedia station) or as a gaming machine. It holds.

[0249] Figure 11(C) shows an example of a stationary information terminal. The stationary information terminal shown in Figure 11(C) is housed in a box. It comprises a body 1001c and a display unit 1002c provided on the housing 1001c. A support base may be provided to support the housing 1001c.

[0250] Note that the side 1003c of the housing 1001c has a connection terminal for connecting to an external device, Figure 11 (C) You may provide one or more buttons for operating the stationary information terminal shown in (C). stomach.

[0251] Furthermore, the stationary information terminal shown in Figure 11(C) has a CPU and a main unit inside the enclosure 1001c. Memory and an interface for sending and receiving signals between external devices, the CPU, and main memory. It may also include the following: Furthermore, one integrated circuit having a specific function may be included within the housing 1001c. Alternatively, multiple units may be provided. In addition, the stationary information terminal shown in Figure 11(C) can transmit signals to the outside. An antenna for receiving signals may be provided.

[0252] The stationary information terminal shown in Figure 11(C) is, for example, a digital photo frame, an output monitor, or It functions as a television device.

[0253] For example, the configuration of the light-emitting device of the above embodiment can be used, for example, in the display unit of an electronic device. For example, the display units 1002a to 1002c shown in Figures 11(A) to 11(C) The light-emitting device in the above embodiment 2 can be used.

[0254] Furthermore, the electronic device shown in Figure 12 is an example of a foldable information terminal, and Figure 12(A) is an external This is a schematic diagram, and Figure 12(B) is a block diagram.

[0255] The electronic device shown in Figure 12 consists of a housing 6000a and a housing 6000, as shown in Figure 12(A). b, panel 6001a, panel 6001b, shaft portion 6002, button 6003, It includes a connection terminal 6004 and a recording medium insertion section 6005. Furthermore, the electronic device shown in Figure 12... As shown in Figure 12(B), the device consists of a power supply unit 6101, a wireless communication unit 6102, and a calculation unit 6 It has 103, an audio unit 6104, and a panel unit 6105.

[0256] Panel 6001a is installed on the housing 6000a.

[0257] Panel 6001b is provided on housing 6000b. Housing 6000b also has shaft portion 60 02 connects to enclosure 6000a.

[0258] Panels 6001a and 6001b function as display panels. For example, Panels 6001a and 6001b display different images or a continuous image. You may do so.

[0259] Panels 6001a and 6001b use the light-emitting device described in Embodiment 2 above. It is possible to be there.

[0260] Furthermore, if either or both of panels 6001a and 6001b function as a touch panel It may have the ability. In this case, for example, one of panel 6001a and panel 6001b or The keyboard image is displayed on both sides, and fingers 6, 0, 10, etc. touch the keyboard image. Further input operations may be performed. Also, the display panel and touch panel can be stacked to form panel 60. 01a and panel 6001b may be configured as either or both. Also, a display circuit and an optical detector Using an input / output panel equipped with an output circuit, either panel 6001a or panel 6001b or Both can be configured.

[0261] In the electronic device shown in Figure 12, there is a shaft portion 6002, so for example, housing 6000a or housing 6 Move 000b to superimpose housing 6000a onto housing 6000b, thereby folding the electronic device. It is possible.

[0262] Button 6003 is provided on the housing 6000b. Button 600 is provided on the housing 6000a. 3 may be provided. Also, multiple buttons 6003 are provided on housing 6000a and housing 6000b It may be provided on one or both. For example, by providing a button 6003 which is a power button. Furthermore, pressing button 6003 allows you to control whether or not to turn on the electronic device.

[0263] The connection terminal 6004 is provided on the housing 6000a. Note that the housing 6000b has a connection terminal 6 004 may be provided. Also, multiple connection terminals 6004 can be connected to housing 6000a and housing 600 It may be provided on one or both of 0b. For example, via connection terminal 6004, personal controller By connecting a computer to electronic devices, a personal computer can control electronic devices. You may rewrite the contents of the stored data.

[0264] The recording medium insertion section 6005 is provided in the housing 6000a. A media insertion section 6005 may be provided. Alternatively, multiple recording media insertion sections 6005 may be provided in the housing 600. 0a and housing 6000b may be provided in either or both. For example, a card slot may be provided in the recording medium insertion area. By inserting a card-type recording medium, data can be read from the card-type recording medium to the electronic device. Alternatively, it can write data from electronic devices to a card-type recording medium.

[0265] Furthermore, the power supply unit 6101 has the function of controlling the supply of power to operate electronic devices. For example, from the power supply unit 6101 to the wireless communication unit 6102, the calculation unit 6103, the voice unit 6104, Power is supplied to the panel section 6105. The power supply section 6101 includes, for example, an energy storage device. The energy storage device is installed inside one or both of the enclosures 6000a and 6000b. Furthermore, a power supply circuit that generates the power supply voltage for operating electronic devices is provided in the power supply unit 6101. This is also acceptable. In this case, the power supply voltage in the power supply circuit is obtained using the power supplied by the energy storage device. It is generated. Alternatively, the power supply unit 6101 may be connected to a commercial power supply.

[0266] The wireless communication unit 6102 has the function of transmitting and receiving radio waves. For example, the wireless communication unit 6102 It includes an antenna, a demodulation circuit, a modulation circuit, and so on. In this case, for example, radio waves from the antenna Data is exchanged with the outside using the transmission and reception of the wireless communication unit 6102. An antenna may be installed.

[0267] The arithmetic unit 6103 includes, for example, the wireless communication unit 6102, the voice unit 6104, and the panel unit 6105. It has the function of performing calculations according to the command signals input from. For example, the calculation unit 6103 It includes a CPU, logic circuits, and memory circuits.

[0268] The audio unit 6104 has the function of controlling the input and output of sound, which is audio data. For example, audio Section 6104 includes a speaker and a microphone.

[0269] The power supply unit 6101, the wireless communication unit 6102, the calculation unit 6103, and the voice unit 6104 are, for example, It is installed inside one or both of the housings 6000a and 6000b.

[0270] Panel section 6105 consists of panel 6001a (also called panel A) and panel 6001b ( It has a function to control the operation of the panel (also called Nel B). Furthermore, panel 60 is located on panel section 6105. A drive circuit is provided to control the drive of panel 6001a and panel 6001b, and The operation of Nell 6001b may be controlled.

[0271] Furthermore, the power supply unit 6101, wireless communication unit 6102, calculation unit 6103, voice unit 6104, and A control circuit may be provided in one or more of the flannel sections 6105, and the operation may be controlled by the control circuit. Furthermore, a control circuit is provided in the calculation unit 6103, and the control circuit of the calculation unit 6103 controls the power supply unit 6 101, one or more of the wireless communication unit 6102, the voice unit 6104, and the panel unit 6105 You may control the operation.

[0272] Furthermore, the power supply unit 6101, wireless communication unit 6102, voice unit 6104, and panel unit 6105 One or more memory circuits are provided, and the data necessary for operation is stored in the memory circuits. This is also acceptable. This can increase the operating speed.

[0273] Furthermore, the electronic device shown in Figure 12 can receive power from the commercial power supply and also store energy. The device can also use the power stored within it. Therefore, for example, in the event of a power outage, the commercial power supply may be used. Even when electricity supply is unavailable, by using an energy storage device as a power source, electronics It can power devices.

[0274] By using the configuration shown in Figure 12, the electronic device shown in Figure 12 can function as, for example, a telephone or an e-reader. It can have the functions of one or more personal computers and gaming machines. ru.

[0275] The above is a description of an example of an electronic device in this embodiment.

[0276] As explained using Figures 11 and 12, an example of the electronic device in this embodiment is as described above. The configuration of the light-emitting device in the embodiment is provided for the panel section.

[0277] Furthermore, in an example of the electronic device in this embodiment, the power supply voltage is set in the housing according to the incident illuminance. The system includes one or more photoelectric conversion units that generate electricity and operating units that operate electronic equipment. This is also acceptable. For example, by providing a photoelectric conversion unit, an external power supply becomes unnecessary, so the external power supply is The electronic device can be used for extended periods even in locations where it is not available. [Explanation of Symbols]

[0278] 111 Field-effect transistor 112 Field-effect transistors 113 Field-effect transistor 114 Field-effect transistors 115 Field-effect transistor 116 Field-effect transistors 117 Field-effect transistor 118 Field-effect transistor 121 Capacitive elements 122 Capacitive elements 123 Capacitive element 140 light-emitting elements 151 Wiring 152 Wiring 153 Wiring 154 Wiring 155 Wiring 156 Wiring 157 Wiring 158 Wiring 159 Wiring 160 Wiring 400_A Device formation layer 400_B Device formation layer 401_A Conductive layer 401_B Conductive layer 402_A Insulating layer 402_B Insulating layer 403_A Semiconductor layer 403_B Semiconductor layer 404a area 404b area 405a_A Conductive layer 405a_B Conductive layer 405b_A Conductive layer 405b_B Conductive layer 406 Insulating layer 407 Insulating layer 500 circuit boards 511a conductive layer 511b Conductive layer 511c conductive layer 511d conductive layer 511e conductive layer 511f conductive layer 511g conductive layer 511h Conductive layer 512 Insulating layer 513a Semiconductor layer 513b Semiconductor layer 513c semiconductor layer 513d semiconductor layer 513e semiconductor layer 513f semiconductor layer 513g semiconductor layer 513h semiconductor layer 515a conductive layer 515b Conductive layer 515c conductive layer 515d conductive layer 515e conductive layer 515f conductive layer 515g conductive layer 515h conductive layer 515i conductive layer 515j conductive layer 515k conductive layer 515l conductive layer 516 Insulating layer 517a conductive layer 517b Conductive layer 518 Insulating layer 519 Conductive layer 521 Insulating layer 522 Emitting layer 523 Conductive layer 524 circuit boards 525 Colored layer 526 Insulating layer 527 Insulating layer 900 Light-emitting part 901 Drive Circuit 902 Drive Circuit 910 Light-emitting circuit 1001a Enclosure 1001b enclosure 1001c enclosure 1002a Display section 1002b Display section 1002c Display section 1003a side 1003b Side 1003c side 1008 Deck section 6000a enclosure 6000b enclosure 6001a Panel 6001b Panel 6002 Shaft 6003 button 6004 Connection terminal 6005 Recording medium insertion section 6010 finger 6101 Power supply section 6102 Wireless Communication Section 6103 Arithmetic unit 6104 Audio section 6105 Panel section

Claims

1. The pixel portion includes a first transistor to a third transistor, a light-emitting element, and first wiring and second wiring. The first transistor has a first gate electrode and a second gate electrode, The source electrode or drain electrode of the second transistor is electrically connected to the first wiring to which the data signal is supplied. The source electrode or the other drain electrode of the second transistor is electrically connected to the first gate electrode. One of the source electrode or drain electrode of the third transistor is electrically connected to the second gate electrode. The source electrode or the other drain electrode of the third transistor is electrically connected to the second wiring. The first transistor is a light-emitting device having the function of controlling the current flowing through the light-emitting element, Having a first conductive film to a third conductive film, The first conductive film functions as either the source electrode or the drain electrode of the second transistor. The second conductive film has a first region that overlaps with the first conductive film via a first insulating film disposed above the second conductive film, and is electrically connected to the pixel electrode of the light-emitting element. The third conductive film has a second region that overlaps with the second conductive film via the first insulating film, and when the third transistor is in a conductive state, the potential of the second wiring is applied via the third transistor. In a plan view, the second region is wider than the first region. Light-emitting device.

2. The pixel portion includes a first transistor to a third transistor, a light-emitting element, and first wiring and second wiring. The first transistor has a first gate electrode and a second gate electrode, The source electrode or drain electrode of the second transistor is electrically connected to the first wiring to which the data signal is supplied. The source electrode or the other drain electrode of the second transistor is electrically connected to the first gate electrode. One of the source electrode or drain electrode of the third transistor is electrically connected to the second gate electrode. The source electrode or the other drain electrode of the third transistor is electrically connected to the second wiring. The first transistor is a light-emitting device having the function of controlling the current flowing through the light-emitting element, Having a first conductive film to a third conductive film, The first conductive film functions as either the source electrode or the drain electrode of the second transistor. The second conductive film has a first region that overlaps with the first conductive film via a first insulating film disposed above the second conductive film, and is electrically connected to the pixel electrode of the light-emitting element. The third conductive film has a second region that overlaps with the second conductive film via the first insulating film, and when the third transistor is in a conductive state, the potential of the second wiring is applied via the third transistor. Each of the first conductive film and the third conductive film has a region in contact with the first insulating film, In a plan view, the second region is wider than the first region. Light-emitting device.

3. The pixel portion includes a first transistor to a third transistor, a light-emitting element, and a first wiring to a third wiring. The first transistor has a first gate electrode and a second gate electrode, The source electrode or drain electrode of the second transistor is electrically connected to the first wiring to which the data signal is supplied. The source electrode or the other drain electrode of the second transistor is electrically connected to the first gate electrode. One of the source electrode or drain electrode of the third transistor is electrically connected to the second gate electrode. The source electrode or the other drain electrode of the third transistor is electrically connected to the second wiring. The first transistor is a light-emitting device having the function of controlling the current flowing between the third wiring and the light-emitting element, Having a first conductive film to a third conductive film, The first conductive film functions as either the source electrode or the drain electrode of the second transistor. The second conductive film has a first region that overlaps with the first conductive film via a first insulating film disposed above the second conductive film, and is electrically connected to the pixel electrode of the light-emitting element. The third conductive film has a second region that overlaps with the second conductive film via the first insulating film, and when the third transistor is in a conductive state, the potential of the second wiring is applied via the third transistor. In a plan view, the second region is wider than the first region. Light-emitting device.

4. The pixel portion includes a first transistor to a third transistor, a light-emitting element, and a first wiring to a third wiring. The first transistor has a first gate electrode and a second gate electrode, The source electrode or drain electrode of the second transistor is electrically connected to the first wiring to which the data signal is supplied. The source electrode or the other drain electrode of the second transistor is electrically connected to the first gate electrode. One of the source electrode or drain electrode of the third transistor is electrically connected to the second gate electrode. The source electrode or the other drain electrode of the third transistor is electrically connected to the second wiring. The first transistor is a light-emitting device having the function of controlling the current flowing between the third wiring and the light-emitting element, Having a first conductive film to a third conductive film, The first conductive film functions as either the source electrode or the drain electrode of the second transistor. The second conductive film has a first region that overlaps with the first conductive film via a first insulating film disposed above the second conductive film, and is electrically connected to the pixel electrode of the light-emitting element. The third conductive film has a second region that overlaps with the second conductive film via the first insulating film, and when the third transistor is in a conductive state, the potential of the second wiring is applied via the third transistor. Each of the first conductive film and the third conductive film has a region in contact with the first insulating film, In a plan view, the second region is wider than the first region. Light-emitting device.

5. In any one of claims 1 to 4, Each of the first to third transistors has an n-channel type. Light-emitting device.

Images