Photosensitive resin composition, photosensitive resin film, pattern forming method, optical component, color filter, and image display device.

Abstract

The present invention provides a photosensitive resin composition having good lithographic properties, a high quantum dot content in the photosensitive resin composition, and good luminescence efficiency, a photosensitive resin film, a pattern forming method, and an image display device and optical component equipped with a color filter using the said composition. [Solution] A photosensitive resin composition characterized by comprising (A) quantum dots, (B) an alkoxysilane having radical crosslinkable groups and containing three alkoxy groups, (C) a photoacid generator, and (D) a photoradical generator.

Description

[Technical Field]

[0001] The present invention relates to a photosensitive resin composition, a photosensitive resin film, a pattern forming method, and an image display device and optical component comprising a color filter using the composition. [Background technology]

[0002] Micro-LED displays are a display technology that uses microscopic LEDs on a micrometer scale, and are attracting attention for their high resolution, high brightness, and long lifespan. In order to represent the red, blue, and green colors necessary for displays in micro-LEDs, a method has been developed that uses quantum dots as color conversion structures to convert the short-wavelength blue LED light into the longer-wavelength red and green light.

[0003] For large-sized displays, the mainstream method is to form color conversion structures on LED arrays using an inkjet method. However, at the micro-level, fine pattern formation is required, necessitating patterning by photolithography using photosensitive materials (Patent Document 1). Furthermore, as devices are required to emit brighter light with lower power consumption, there is a demand for photosensitive resin compositions with a high quantum dot content and high luminous efficiency (Patent Document 2). In recent years, there has also been a demand for further miniaturization and improvement of color conversion efficiency. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2016-053716 [Patent Document 2] Special Publication No. 2020-107867 [Overview of the Initiative] [Problems that the invention aims to solve]

[0005] The present invention has been made in view of the above circumstances, and aims to provide a photosensitive resin composition, a photosensitive resin film, a pattern forming method, and an image display device and optical component equipped with a color filter using the said composition, which have good lithographic properties, a high content of quantum dots in the photosensitive resin composition, and good luminescence efficiency. [Means for solving the problem]

[0006] To solve the above problems, the present invention provides: (A) Quantum dots, (B) Alkoxysilane having a radical crosslinking group and containing three alkoxy groups, (C) Photoacid generator, and (D) Photoradical Generator The present invention provides a photosensitive resin composition containing [a specific substance].

[0007] Such a photosensitive resin composition will have good lithographic properties, a high quantum dot content, and good luminescence efficiency.

[0008] Furthermore, it is preferable that the radical crosslinkable group of component (B) is a (meth)acryloyl group.

[0009] Such radical crosslinkable groups are highly reactive, making them easy to crosslink and resulting in good lithographic properties.

[0010] The photosensitive resin composition of the present invention further comprises, with respect to the total solid content, The above-mentioned component (A): 1 to 65% by mass, The aforementioned component (B): less than 30-99% by mass, Component (C): 0.01 to 5% by mass, and Component (D): 0.01~5% by mass It is preferable that this be the case.

[0011] By including components (A) to (D) in these proportions, the effects of the present invention can be more fully realized.

[0012] Moreover, it is preferable that the component (A) is 15 to 50% by mass.

[0013] By containing the component (A) in such a ratio, blue LED light can be converted with high efficiency, the amount of light required for lithography can be ensured, and both patterning and luminous efficiency can be achieved.

[0014] Moreover, it is preferable that the component (C) is a gallate salt.

[0015] If the component (C) is such a component, the effects of the present invention can be more fully exhibited.

[0016] The photosensitive resin composition of the present invention preferably further contains a solvent (E).

[0017] The photosensitive resin composition of the present invention can improve the coating property by adding a solvent.

[0018] Moreover, the present invention provides a photosensitive resin film which is a dried product of the above photosensitive resin composition.

[0019] [[ID=3l]]The photosensitive resin film of the present invention can be particularly used for producing a color filter.

[0020] Moreover, in the present invention, (i) A step of forming a photosensitive resin film on a substrate using the above photosensitive resin composition, (ii) A step of exposing the photosensitive resin film, and (iii) A step of developing the exposed photosensitive resin film with a developer to form a pattern, A patterning method including the above steps is provided.

[0021] Since the photosensitive resin composition of the present invention has good lithography properties, a pattern can be formed by such a method.

[0022] Furthermore, the present invention provides an optical component comprising a patterned cured film of the above-mentioned photosensitive resin composition.

[0023] Furthermore, the present invention provides a color filter comprising a patterned cured film of the above-mentioned photosensitive resin composition.

[0024] The photosensitive resin composition of the present invention can be used particularly suitably in optical components, especially color filters.

[0025] Furthermore, the present invention provides an image display device equipped with the above-mentioned color filter.

[0026] The image display device of the present invention has good luminescence efficiency by comprising a color filter using the photosensitive resin composition of the present invention. [Effects of the Invention]

[0027] By using the photosensitive resin composition of the present invention, it is possible to provide a photosensitive resin composition, a photosensitive resin film, a pattern forming method, and an image display device and optical component equipped with a color filter using the said composition, which have good lithographic properties, a high quantum dot content in the photosensitive resin composition, and good luminescence efficiency. [Modes for carrying out the invention]

[0028] As described above, there was a need for the development of a photosensitive resin composition, a photosensitive resin film, a pattern forming method, and an image display device and optical component equipped with a color filter using the said composition, which have good lithographic properties, a high quantum dot content in the photosensitive resin composition, and good luminescence efficiency.

[0029] As a result of diligent research into the above-mentioned problems, the present inventors have found that a photosensitive resin composition containing the above-mentioned components (A) to (D) makes it possible to form a photosensitive resin film with good lithography, high content, and excellent luminescence efficiency, and have completed the present invention.

[0030] In other words, the present invention is a photosensitive resin composition comprising (A) quantum dots, (B) an alkoxysilane having a radical crosslinkable group and containing three alkoxy groups, (C) a photoacid generator, and (D) a photoradical generator.

[0031] The present invention will be described in detail below, but the present invention is not limited to these descriptions.

[0032] [Photosensitive resin composition] The photosensitive resin composition of the present invention comprises (A) quantum dots, (B) an alkoxysilane having radical crosslinkable groups and containing three alkoxy groups, (C) a photoacid generator, and (D) a photoradical generator.

[0033] [(A) Quantum dots] Quantum dots are nanoscale semiconductor materials. Atoms form molecules, and these molecules form clusters of smaller molecules to create nanoparticles. When such nanoparticles exhibit semiconductor properties, they are called quantum dots (quantum dot particles).

[0034] When a quantum dot receives energy from an external source and becomes airborne, it autonomously emits energy through its corresponding energy band gap (it emits light).

[0035] The quantum dots used in this invention are not particularly limited and can be used in any form. The quantum dots are mainly nanoparticles of 10 nm or less (preferably 1 to 10 nm), but they can also be nanowires, nanorods, nanotubes, nanocubes, etc., and any shape is applicable.

[0036] The quantum dots used in the present invention can be any suitable material, for example, semiconductor materials selected from the group consisting of Group II-VI, Group III-V, Group IV, Group IV-VI, Group I-III-VI, Group II-IV-V and mixed crystals or alloys thereof, or compounds having a perovskite structure. Specifically, examples include, but are not limited to, compounds containing ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, Si, Ge, Sn, Pb, PbS, PbSe, PbTe, SnS, SnSe, SnTe, AgGaS2, AgInS2, AgGaSe2, AgInSe2, CuGaS2, CuGaSe2, CuInS2, CuInSe2, ZnSiP2, ZnGeP2, CdSiP2, CdGeP2, CsPbCl3, CsPbBr3, CsPbI3, CsSnCl3, CsSnBr3, and CsSnI3.

[0037] The quantum dots used in the present invention can have a core-shell structure. The shell material capable of forming a core-shell structure is not particularly limited, but it is preferable to have a large band gap and low lattice mismatch with respect to the core material, and can be arbitrarily combined with the core material. Specific shell materials include ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, BeS, BeSe, BeTe, MgS, MgSe, MgTe, PbS, PbSe, PbTe, SnS, SnSe, SnTe, CuF, CuCl, CuBr, CuI, etc., and these materials may be selected as a single or multiple mixed crystal, but are not limited thereto.

[0038] While there are various methods for producing quantum dots used in the present invention, such as liquid-phase and gas-phase methods, the present invention is not particularly limited. However, from the viewpoint of exhibiting high fluorescence emission efficiency, it is preferable to use semiconductor nanoparticles obtained by the hot soap method or hot injection method, which involves reacting precursor species at high temperatures in a high-boiling-point nonpolar solvent. It is desirable that organic ligands are coordinated to the surface in order to impart dispersibility in the nonpolar solvent and reduce surface defects.

[0039] From the viewpoint of dispersibility, the organic ligand preferably contains aliphatic hydrocarbons. Examples of such organic ligands include oleic acid, stearic acid, palmitic acid, myristic acid, lauric acid, decanoic acid, octanoic acid, oleylamine, stearyl(octadecyl)amine, dodecyl(lauryl)amine, decylamine, octylamine, octadecanethiol, hexadecanethiol, tetradecanethiol, dodecanethiol, decanethiol, octanthiol, trioctylphosphine, trioctylphosphine oxide, triphenylphosphine, triphenylphosphine oxide, tributylphosphine, and tributylphosphine oxide.

[0040] (A) The content of component (A) is preferably 1 to 65% by mass, and more preferably 15 to 50% by mass, relative to the total solid content, from the viewpoint of luminous efficiency. A content of Component (A) of 1% by mass or more is preferable because it can convert blue LED light with high efficiency. Furthermore, a content of 65% by mass or less is preferable because it can secure the amount of light necessary for lithography and achieve both patterning and luminous efficiency. Component (A) may be used alone or in combination of two or more types.

[0041] [(B) Alkoxysilane] Component (B) in the present invention is an alkoxysilane having a radical crosslinking group and containing three alkoxy groups.

[0042] When the photosensitive resin composition of the present invention is irradiated with light, the alkoxy groups in component (B) crosslink with each other due to the action of the photoacid generator (C) described later, coating the quantum dots (A), and further crosslinks the radical crosslinkable groups in component (B) that are coating (A) due to the action of the photoradical generator (D) described later. In this way, the photosensitive resin composition of the present invention, by using a combination of condensation reaction and crosslinking by radical reaction, has better lithographic properties than radical crosslinking between quantum dots (A), and has a high quantum dot content in the photosensitive resin composition, resulting in good luminescence efficiency. Furthermore, good reliability can be expected because the surface of the quantum dots (A) is coated with inorganic material derived from component (B).

[0043] Examples of radical crosslinkable groups include (meth)acryloyl groups, allyl groups, vinyl groups, and vinyloxy groups. Among these, (meth)acryloyl groups are preferred due to their availability.

[0044] Alkoxysilanes are compounds represented by chemical formula 1, for example. (R1OR2)Si(OR3)3 (chemical formula 1) R1 represents a (meth)acryloyl group, and R2 represents an alkylene group with 1 to 11 carbon atoms. R3 represents an alkyl group with 1 to 4 carbon atoms, and they may be the same or different.

[0045] Specific examples of chemical formula 1 include 2-(meth)acryloxyethyltrimethoxysilane, 3-(meth)acryloxypropyltrimethoxysilane, 3-(meth)acryloxypropyltriethoxysilane, 3-(meth)acryloxypropyltripropoxysilane, 3-(meth)acryloxypropyltributoxysilane, 4-(meth)acryloxybutyltrimethoxysilane, 5-(meth)acryloxypentyltrimethoxysilane, 6-(meth)acryloxyhexyltrimethoxysilane, 7-(meth)acryloxyheptyltrimethoxysilane, 8-(meth)acryloxyoctyltrimethoxysilane, 9-(meth)acryloxynonyltrimethoxysilane, 10-(meth)acryloxydecyltrimethoxysilane, and 11-(meth)acryloxyundecyltrimethoxysilane. These can be used individually or in appropriate combinations of two or more.

[0046] In particular, it is preferable that R2 has 2 to 3 carbon atoms and R3 has 1 to 2 carbon atoms.

[0047] (B) The content of component (B) is preferably 30 to less than 99% by mass, and more preferably 40 to 80% by mass, relative to the total solid content, from the viewpoint of lithography. A content of 30% by mass or more of component (B) is preferable because it allows for more stable patterning. Furthermore, a content of less than 99% by mass is preferable because it allows for the addition of quantum dots sufficient to provide adequate luminescence efficiency. Component (B) may be used alone or in combination of two or more types.

[0048] [(C) Photoacid Generator] The photoacid generator of component (C) is not particularly limited as long as it decomposes upon light irradiation and generates acid, but it is preferable that it generates acid when irradiated with light of a wavelength of 190 to 500 nm. The photosensitive resin composition of the present invention has excellent compatibility with acid generators, so a wide range of acid generators can be used.

[0049] (C) The photoacid generator is used as a curing catalyst for the condensation reaction of alkoxy groups. Examples of the photoacid generator include onium salts, diazomethane derivatives, glyoxime derivatives, β-ketosulfone derivatives, disulfone derivatives, nitrobenzylsulfonate derivatives, sulfonic acid ester derivatives, imido-yl-sulfonate derivatives, oxime sulfonate derivatives, iminosulfonate derivatives, and triazine derivatives.

[0050] Examples of the onium salt include sulfonium salts represented by the following formula (C1) or iodonium salts represented by the following formula (C2). [ka]

[0051] In formulas (C1) and (C2), R 101 ~R 105 Each of these is independently an alkyl group having 1 to 12 carbon atoms that may have substituents, an aryl group having 6 to 12 carbon atoms that may have substituents, or an aralkyl group having 7 to 12 carbon atoms that may have substituents. - It is a non-nucleophilic counterion.

[0052] The alkyl group may be linear, branched, or cyclic, and specific examples include methyl group, ethyl group, n-propyl group, isopropyl group, cyclopropyl group, n-butyl group, isobutyl group, sec-butyl group, tert-butyl group, cyclobutyl group, n-pentyl group, cyclopentyl group, cyclohexyl group, norbornyl group, adamantyl group, etc. The aryl group may be phenyl group, naphthyl group, biphenylyl group, etc. The aralkyl group may be benzyl group, phenethyl group, etc.

[0053] Examples of substituents include oxo groups, linear, branched, or cyclic alkoxy groups having 1 to 12 carbon atoms, linear, branched, or cyclic alkyl groups having 1 to 12 carbon atoms, aryl groups having 6 to 24 carbon atoms, aralkyl groups having 7 to 25 carbon atoms, aryloxy groups having 6 to 24 carbon atoms, and arylthio groups having 6 to 24 carbon atoms.

[0054] R 101 ~R 105 Preferred alkyl groups include alkyl groups which may have substituents such as methyl, ethyl, propyl, butyl, cyclohexyl, norbornyl, adamantyl, and 2-oxocyclohexyl groups; aryl groups which may have substituents such as phenyl, naphthyl, biphenylyl, o-, m-, or p-methoxyphenyl, ethoxyphenyl, m-, or p-tert-butoxyphenyl, 2-, 3-, or 4-methylphenyl, ethylphenyl, 4-tert-butylphenyl, 4-butylphenyl, dimethylphenyl, terphenylyl, biphenylyloxyphenyl, and biphenylylthiophenyl groups; and aralkyl groups which may have substituents such as benzyl and phenethyl groups. Of these, aryl groups which may have substituents and aralkyl groups which may have substituents are more preferred.

[0055] Examples of the non-nucleophilic counter ion include halide ions such as chloride ion and bromide ion; fluoroalkanesulfonate ions such as triflate ion, 1,1,1-trifluoroethanesulfonate ion, and nonafluorobutanesulfonate ion; arylsulfonate ions such as tosylate ion, benzenesulfonate ion, 4-fluorobenzenesulfonate ion, and 1,2,3,4,5-pentafluorobenzenesulfonate ion; alkanesulfonate ions such as mesylate ion and butanesulfonate ion; fluoroalkanesulfonimide ions such as trifluoromethanesulfonimide ion; fluoroalkanesulfonylmethide ions such as tris(trifluoromethylsulfonyl)methide ion; borate ions such as tetrakisphenylborate ion and tetrakis(pentafluorophenyl)borate ion, and gallate ions such as tetrakis(pentafluorophenyl)gallate ion.

[0056] Examples of the diazomethane derivative include compounds represented by the following formula (C3). [Chemical formula]

[0057] In formula (C3), R 111 and R 112 are each independently an alkyl group or halogenated alkyl group having 1 to 12 carbon atoms, an aryl group having 6 to 12 carbon atoms which may have a substituent, or an aralkyl group having 7 to 12 carbon atoms.

[0058] The alkyl group may be linear, branched, or cyclic, and specific examples thereof include the same ones as exemplified in the description of R 101 ~R 105 Examples of the halogenated alkyl group include trifluoromethyl group, 1,1,1-trifluoroethyl group, 1,1,1-trichloroethyl group, and nonafluorobutyl group.

[0059] Examples of aryl groups that may have the substituent include phenyl groups; alkoxyphenyl groups such as 2-,3- or 4-methoxyphenyl groups, 2-,3- or 4-ethoxyphenyl groups, and 3- or 4-tert-butoxyphenyl groups; alkylphenyl groups such as 2-,3- or 4-methylphenyl groups, ethylphenyl groups, 4-tert-butylphenyl groups, 4-butylphenyl groups, and dimethylphenyl groups; and aryl halogen groups such as fluorophenyl groups, chlorophenyl groups, and 1,2,3,4,5-pentafluorophenyl groups. Examples of aralkyl groups include benzyl groups and phenethyl groups.

[0060] Examples of the glyoxime derivative include compounds represented by the following formula (C4). [ka]

[0061] In formula (C4), R 121 ~R 124 Each of these is independently an alkyl group or alkyl halogenated group having 1 to 12 carbon atoms, an aryl group having 6 to 12 carbon atoms which may have substituents, or an aralkyl group having 7 to 12 carbon atoms. Also, R 123 and R 124 These may be bonded to each other and form a ring with the carbon atoms to which they are bonded, and when a ring is formed, R 123 and R 124 The group formed by the bonding of these atoms is a linear or branched alkylene group having 1 to 12 carbon atoms.

[0062] The alkyl group, halogenated alkyl group, optionally substituted aryl group, and aralkyl group are R 111 and R 112 Examples similar to those exemplified above include the linear or branched alkylene group, such as the methylene group, ethylene group, propylene group, butylene group, and hexylene group.

[0063] Specifically, the onium salts mentioned above include diphenyliodonium trifluoromethanesulfonate, (p-tert-butoxyphenyl)phenyliodonium trifluoromethanesulfonate, diphenyliodonium p-toluenesulfonate, (p-tert-butoxyphenyl)phenyliodonium p-toluenesulfonate, triphenylsulfonium trifluoromethanesulfonate, (p-tert-butoxyphenyl)diphenylsulfonium trifluoromethanesulfonate, and bis(p-tert-butoxyphenyl) trifluoromethanesulfonate. Phenyl(xyphenyl)phenylsulfonium, tris(p-tert-butoxyphenyl)sulfonium trifluoromethanesulfonate, triphenylsulfonium p-toluenesulfonate, (p-tert-butoxyphenyl)diphenylsulfonium p-toluenesulfonate, bis(p-tert-butoxyphenyl)phenylsulfonium p-toluenesulfonate, tris(p-tert-butoxyphenyl)sulfonium p-toluenesulfonate, triphenylsulfonium nonafluorobutanesulfonate, triphenylsulfonium butanesulfonate Trimethylsulfonium trifluoromethanesulfonate, trimethylsulfonium p-toluenesulfonate, cyclohexylmethyl(2-oxocyclohexyl)sulfonium trifluoromethanesulfonate, cyclohexylmethyl(2-oxocyclohexyl)sulfonium p-toluenesulfonate, dimethylphenylsulfonium trifluoromethanesulfonate, dimethylphenylsulfonium p-toluenesulfonate, dicyclohexylphenylsulfonium trifluoromethanesulfonate, p-toluenesulfon Dicyclohexylphenylsulfonium acid, bis(4-tert-butylphenyl)iodonium hexafluorophosphate, diphenyl(4-thiophenoxyphenyl)sulfonium hexafluoroantimonate, [4-(4-biphenylylthio)phenyl]-4-biphenylylphenylsulfonium tris(trifluoromethanesulfonyl)methide, triphenylsulfonium tetrakis(fluorophenyl)borate, tris[4-(4-acetylphenyl)thiophenyl]sulfonium tetrakis(fluorophenyl)borate,Examples include triphenylsulfonium tetrakis(pentafluorophenyl)borate and tris[4-(4-acetylphenyl)thiophenyl]sulfonium tetrakis(pentafluorophenyl)borate.

[0064] Specifically, the aforementioned diazomethane derivatives include bis(benzenesulfonyl)diazomethane, bis(p-toluenesulfonyl)diazomethane, bis(xylenesulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, bis(cyclopentylsulfonyl)diazomethane, bis(n-butylsulfonyl)diazomethane, bis(isobutylsulfonyl)diazomethane, bis(sec-butylsulfonyl)diazomethane, bis(n-propylsulfonyl)diazomethane, bis(isopropylsulfonyl)diazomethane, bis( Examples include tert-butylsulfonyl)diazomethane, bis(n-pentylsulfonyl)diazomethane, bis(isopentylsulfonyl)diazomethane, bis(sec-pentylsulfonyl)diazomethane, bis(tert-pentylsulfonyl)diazomethane, 1-cyclohexylsulfonyl-1-(tert-butylsulfonyl)diazomethane, 1-cyclohexylsulfonyl-1-(tert-pentylsulfonyl)diazomethane, and 1-tert-pentylsulfonyl-1-(tert-butylsulfonyl)diazomethane.

[0065] Specifically, the aforementioned glyoxime derivatives include bis-o-(p-toluenesulfonyl)-α-dimethylglyoxime, bis-o-(p-toluenesulfonyl)-α-diphenylglyoxime, bis-o-(p-toluenesulfonyl)-α-dicyclohexylglyoxime, bis-o-(p-toluenesulfonyl)-2,3-pentanedioneglyoxime, bis-(p-toluenesulfonyl)-2-methyl-3,4-pentanedioneglyoxime, bis-o-(n-butanesulfonyl)-α-dimethylglyoxime, bis-o-(n-butanesulfonyl)-α-diphenylglyoxime, bis-o-(n-butanesulfonyl)-α-dicyclohexylglyoxime, bis-o-(n-butanesulfonyl)-2,3-pentanedioneglyoxime, bis- Examples include o-(methanesulfonyl)-α-dimethylglyoxime, bis-o-(trifluoromethanesulfonyl)-α-dimethylglyoxime, bis-o-(1,1,1-trifluoroethanesulfonyl)-α-dimethylglyoxime, bis-o-(tert-butanesulfonyl)-α-dimethylglyoxime, bis-o-(perfluorooctanesulfonyl)-α-dimethylglyoxime, bis-o-(cyclohexanesulfonyl)-α-dimethylglyoxime, bis-o-(benzenesulfonyl)-α-dimethylglyoxime, bis-o-(p-fluorobenzenesulfonyl)-α-dimethylglyoxime, bis-o-(p-tert-butylbenzenesulfonyl)-α-dimethylglyoxime, bis-o-(xylenesulfonyl)-α-dimethylglyoxime, and bis-o-(camphorsulfonyl)-α-dimethylglyoxime.

[0066] Specific examples of the β-ketosulfone derivatives include 2-cyclohexylcarbonyl-2-(p-toluenesulfonyl)propane and 2-isopropylcarbonyl-2-(p-toluenesulfonyl)propane.

[0067] Examples of the aforementioned disulfone derivatives include diphenyldisulfone and dicyclohexyldisulfone.

[0068] Specific examples of the nitrobenzyl sulfonate derivatives include 2,6-dinitrobenzyl p-toluenesulfonic acid and 2,4-dinitrobenzyl p-toluenesulfonic acid.

[0069] Specific examples of the sulfonic acid ester derivatives include 1,2,3-tris(methanesulfonyloxy)benzene, 1,2,3-tris(trifluoromethanesulfonyloxy)benzene, and 1,2,3-tris(p-toluenesulfonyloxy)benzene.

[0070] Specific examples of the aforementioned imido-yl-sulfonate derivatives include phthalimido-yl-triflate, phthalimido-yl-tosylate, 5-norbornene-2,3-dicarboximido-yl-triflate, 5-norbornene-2,3-dicarboximido-yl-tosylate, 5-norbornene-2,3-dicarboximido-yl-n-butylsulfonate, and n-trifluoromethylsulfonyloxynaphthylimide.

[0071] Specific examples of the oxime sulfonate derivative include α-(benzenesulfonium oxyimino)-4-methylphenylacetonitrile.

[0072] Specific examples of the iminosulfonate derivatives include (5-(4-methylphenyl)sulfonyloxyimino-5H-thiophene-2-ylidene)-(2-methylphenyl)acetonitrile and (5-(4-(4-methylphenylsulfonyloxy)phenylsulfonyloxyimino)-5H-thiophene-2-ylidene)-(2-methylphenyl)acetonitrile.

[0073] Specific examples of the aforementioned triazine derivatives include 2-(methoxyphenyl)-4,6-bis(trichloromethyl)-s-triazine, 2-[2-(3,4-dimethoxyphenyl)ethenyl]-4,6-bis(trichloromethyl)-s-triazine, 2-[2-(furan-2-yl)ethenyl]-4,6-bis(trichloromethyl)-s-triazine, and 2-[2-(5-methylfuran-2-yl)ethenyl]-4,6-bis(trichloromethyl)-s-triazine.

[0074] In addition, 2-methyl-2-[(4-methylphenyl)sulfonyl]-1-[(4-methylthio)phenyl]-1-propane and the like can also be suitably used.

[0075] As the photoacid generator for component (C), the onium salt or gallate salt is particularly preferred, and the onium gallate salt is more preferred.

[0076] (C) The content of component (C) is preferably 0.01 to 5% by mass, more preferably 0.1 to 3% by mass or 0.5 to 5% by mass, relative to the total solids, from the viewpoint of photocurability. A content of component (C) of 0.01% by mass or more is preferable because there is no risk of insufficient acid generation and inadequate crosslinking reaction. Furthermore, a content of 5% by mass or less is preferable because it can suppress the increase in absorbance of the acid generator itself, thus avoiding problems such as decreased transparency. Component (C) may be used alone or in combination of two or more types.

[0077] [(D) Photoradical Generator] The photoradical generator used in the present invention is not particularly limited, but examples include acetophenone compounds, benzophenone compounds, thioxanthone compounds, benzoin compounds, triazine compounds, and oxime compounds.

[0078] Examples of acetophenone compounds include 2,2'-diethoxyacetophenone, 2,2'-dibutoxyacetophenone, 2-hydroxy-2-methylpropiophenone, pt-butyltrichloroacetophenone, pt-butyldichloroacetophenone, 4-chloroacetophenone, 2,2'-dichloro-4-phenoxyacetophenone, 2-methyl-1-(4-(methylthio)phenyl)-2-morpholinopropan-1-one, and 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butan-1-one.

[0079] Examples of benzophenone compounds include benzophenone, benzoylbenzoic acid, methyl benzoylbenzoate, 4-phenylbenzophenone, hydroxybenzophenone, acrylic benzophenone, 4,4'-bis(dimethylamino)benzophenone, 4,4'-bis(diethylamino)benzophenone, 4,4'-dimethylaminobenzophenone, 4,4'-dichlorobenzophenone, and 3,3'-dimethyl-2-methoxybenzophenone.

[0080] Examples of thioxanthone compounds include thioxanthone, 2-methylthioxanthone, isopropylthioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, and 2-chlorothioxanthone.

[0081] Examples of benzoin compounds include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, and benzyl dimethyl ketal.

[0082] Examples of triazine compounds include 2,4,6-trichloro-s-triazine, 2-phenyl-4,6-bis(trichloromethyl)-s-triazine, 2-(3',4'-dimethoxystyryl)-4,6-bis(trichloromethyl)-s-triazine, 2-(4'-methoxynaphthyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-methoxyphenyl)-4,6-bis(trichloromethyl)-s-triazine, and 2-(p-tolyl)-4,6-bis(trichloromethyl)-s-triazine. Examples include din, 2-biphenyl-4,6-bis(trichloromethyl)-s-triazine, bis(trichloromethyl)-6-styryl-s-triazine, 2-(naphtho-1-yl)-4,6-bis(trichloromethyl)-s-triazine, 2-(4-methoxynaphtho-1-yl)-4,6-bis(trichloromethyl)-s-triazine, 2,4-bis(trichloromethyl)-6-piperonyl-s-triazine, and 2,4-bis(trichloromethyl)-6-(4-methoxystyryl)-s-triazine.

[0083] Examples of oxime compounds include 1,2-octanedione, O-acyloxime compounds, 2-(O-benzoyloxime)-1-[4-(phenylthio)phenyl]-1,2-octanedione, 1-(O-acetyloxime)-1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazole-3-yl]ethaneone, and O-ethoxycarbonyl-α-oxyamino-1-phenylpropane-1-one. Specific examples of O-acyloxime compounds include 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholine-4-ylphenyl)-butan-1-one, 1-(4-phenylsulfanylphenyl)-butan-1,2-dione-2-oxime-O-benzoate, 1-(4-phenylsulfanylphenyl)-octane-1,2-dione-2-oxime-O-benzoate, 1-(4-phenylsulfanylphenyl)-octane-1-one oxime-O-acetate, and 1-(4-phenylsulfanylphenyl)-butan-1-one oxime-O-acetate.

[0084] (D) In ​​addition to the above compounds, photoradical generators that can be used include carbazole compounds, diketone compounds, sulfonium borate compounds, diazo compounds, imidazole compounds, non-imidazole compounds, and fluorene compounds.

[0085] (D) The amount of the photoradical generator is preferably in the range of 0.01 to 5% by mass relative to the total solid content, and more preferably in the range of 0.1 to 3% by mass or 0.5 to 5% by mass. When the photoradical generator is included within the above range, a pattern with excellent resolution can be obtained with an excellent balance of sensitivity and developability during exposure and no residual film. Furthermore, the photoradical generator may be used alone or in combination of two or more types.

[0086] [(E) Solvent] The photosensitive resin composition of the present invention may further contain (E) a solvent. The solvent is not particularly limited as long as it can dissolve components (A) to (D) and the various additives described later, but an organic solvent is preferred because it has excellent solubility for these components. Adding a solvent can improve the coatability.

[0087] Examples of the aforementioned organic solvents include ketones such as cyclohexanone, cyclopentanone, and methyl-2-n-pentyl ketone; alcohols such as 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, and 1-ethoxy-2-propanol; ethers such as propylene glycol monomethyl ether (PGME), ethylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, and diethylene glycol dimethyl ether; and esters such as propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether acetate, ethyl lactate, ethyl pyruvate, butyl acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, tert-butyl acetate, tert-butyl propionate, propylene glycol mono-tert-butyl ether acetate, and γ-butyrolactone. These organic solvents can be used individually or in combination of two or more. In particular, ethyl lactate, cyclohexanone, cyclopentanone, PGMEA, γ-butyrolactone, and mixed solvents thereof are preferred as they exhibit the best solubility of the photoacid generator.

[0088] The amount of component (E) used is preferably 25 to 85% by mass, and more preferably 35 to 75% by mass, relative to the total amount of the photosensitive resin composition, from the viewpoint of compatibility and viscosity of the photosensitive resin composition.

[0089] [Other additives] The photosensitive resin composition of the present invention may contain other additives in addition to the components described above. Examples of other additives include surfactants commonly used to improve coatability. These surfactants may function, for example, as leveling agents.

[0090] The surfactants are preferably nonionic, and fluorine-based and silicone-based surfactants are preferred. Examples of fluorine-based surfactants include perfluoroalkyl polyoxyethylene ethanol, fluorinated alkyl esters, perfluoroalkylamine oxides, and fluorine-containing organosiloxane compounds. These can be commercially available and include, for example, Fluorad® FC-430 (manufactured by 3M), Surflon® S-141 and S-145 (manufactured by AGC Seimi Chemical Co., Ltd.), Unidyne® DS-401, DS-4031 and DS-451 (manufactured by Daikin Industries, Ltd.), Megafac® F-8151 (manufactured by DIC Corporation), and X-70-093 (manufactured by Shin-Etsu Chemical Co., Ltd.).

[0091] Examples of silicone-based surfactants include KP321, KP322, KP323, KP324, KP326, KP340, and KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.).

[0092] The content of the surfactant is preferably 0.01 to 5% by mass based on 100% by mass of the total solids.

[0093] The photosensitive resin composition of the present invention is preferably further composed of the following amounts based on the total solid content: component (A): 1 to 65% by mass, component (B): 30 to less than 99% by mass, component (C): 0.01 to 5% by mass, and component (D): 0.01 to 5% by mass. By including components (A) to (D) in these ratios, the effects of the present invention can be more fully realized.

[0094] The photosensitive resin composition of the present invention can be prepared by conventional methods. For example, the photosensitive resin composition of the present invention can be prepared by stirring and mixing the above components, and then filtering them using a filter or the like as necessary.

[0095] The photosensitive resin composition of the present invention is used as a material for optical components that has good lithography properties and high luminescence efficiency due to high QD filling.

[0096] [Photosensitive resin coating] The photosensitive resin coating of the present invention is a dried body of the photosensitive resin composition described above. By subjecting the photosensitive resin coating of the present invention to the following pattern forming method, color filters and optical components can be obtained.

[0097] [Pattern formation method using photosensitive resin composition] The pattern forming method using the photosensitive resin composition of the present invention is: (i) A step of forming a photosensitive resin film on a substrate using the photosensitive resin composition of the present invention, (ii) A step of exposing the photosensitive resin film, and (iii) A step of developing the exposed photosensitive resin film with a developer to form a pattern, It includes.

[0098] Step (i) is a step of forming a photosensitive resin film on a substrate using a photosensitive resin composition. Examples of the substrate include silicon wafers, silicon wafers for through-electrodes, silicon wafers with thin films formed by backside polishing, plastic or ceramic substrates, and substrates having metals such as Ni or Au on the entire surface or in part of the substrate by ion sputtering or plating. A substrate having either or both grooves and holes with an aperture width of 10 to 100 μm and a depth of 10 to 120 μm may also be used. The aperture width and depth of the grooves or holes in the substrate can be measured using a scanning electron microscope.

[0099] As a method for forming a photosensitive resin film, for example, the photosensitive resin composition is applied to the substrate by methods such as the dip method, spin coating method, or roll coating method, and preheating (pre-bake: PB) is performed as necessary to efficiently carry out the photocuring reaction. Preheating can be performed, for example, at 40 to 140°C for about 1 minute to 1 hour.

[0100] The amount of the photosensitive resin composition to be applied can be appropriately selected depending on the purpose, but an amount that results in a film thickness of 0.1 to 200 μm, preferably 1 to 20 μm, is preferred.

[0101] To improve film thickness uniformity on the substrate surface, a solvent may be dropped onto the substrate before applying the photosensitive resin composition (pre-wetting method). The solvent to be dropped and its amount can be appropriately selected depending on the purpose. Preferred solvents include alcohols such as isopropyl alcohol (IPA), ketones such as cyclohexanone, and glycols such as PGME, but it is also possible to use a solvent used in the photosensitive resin composition.

[0102] Next, in step (ii), the photosensitive resin film is exposed. Exposure is preferably carried out with light of a wavelength of 1 to 600 nm, more preferably with light of 10 to 600 nm, and even more preferably with light of 190 to 500 nm. Examples of such wavelengths of light include various wavelengths of light generated by a radiation generator, such as ultraviolet light such as g-rays, h-rays, and i-rays, and far-ultraviolet light (248 nm, 193 nm). Of these, light with a wavelength of 248 to 436 nm is particularly preferred. The exposure amount is 10 to 10,000 mJ / cm². 2 It is preferable.

[0103] Exposure may be performed via a photomask. The photomask may, for example, have a desired pattern cut out of it. The material of the photomask is not particularly limited, but it is preferably one that blocks light of the aforementioned wavelength, and for example, one that has chromium or the like as a light-shielding film is preferably used.

[0104] Furthermore, post-exposure heating (PEB) may be performed to increase development sensitivity. PEB is preferably performed at 40-150°C for 0.5-10 minutes. PEB causes the exposed areas to crosslink, forming an insoluble pattern (negative pattern) that is insoluble in the solvent used as the developer.

[0105] After exposure or PEB, in step (iii), the substrate is developed with a developer to form a pattern. Preferred developers include alcohols such as isopropyl alcohol (IPA), ketones such as cyclohexanone, and glycols such as PGME, but solvents used in photosensitive resin compositions can also be used. Conventional development methods include immersing the patterned substrate in the developer. Afterwards, washing, rinsing, drying, etc., are performed as necessary to obtain a resin film having the desired pattern.

[0106] If it is not necessary to form a pattern, for example, if it is simply desired to form a uniform film, the film can be formed in step (ii) of the pattern formation method by exposing the material to light of an appropriate wavelength without using a photomask.

[0107] [Optical components] The optical component of the present invention comprises a cured film obtained by the pattern forming method described above. That is, it comprises a cured film on which a pattern has been formed on the photosensitive resin film described above.

[0108] [Color Filter] The color filter of the present invention comprises a cured film obtained by the pattern formation method described above. That is, it comprises a cured film on which a pattern has been formed on the photosensitive resin film described above.

[0109] [Image display device] The image display device of the present invention comprises the color filter described above. That is, it comprises a cured film on which a pattern is formed on the photosensitive resin film described above. [Examples]

[0110] The present invention will be described more specifically below with reference to examples and comparative examples, but the present invention is not limited to the following examples.

[0111] [1] Preparation of photosensitive resin composition [Examples 1-18 and Comparative Examples 1-14] Each component was blended according to the proportions listed in Tables 1-4, then stirred and mixed at room temperature, and microfiltration was performed using a 1.0 μm glass filter to obtain the photosensitive resin compositions of Examples 1-18 and Comparative Examples 1-14 shown in Tables 1-4.

[0112] [Table 1]

[0113] [Table 2]

[0114] [Table 3]

[0115] [Table 4]

[0116] In Tables 1-4, quantum dots R-1 is S-BE030 manufactured by Shoei Chemical Co., Ltd. (particle size 5-10 nm, material InP:ZnS:SeZn=25:50:25), R-2 is 900514-1ML manufactured by Aldrich (particle size 5-10 nm, material CdSe(core) / CdS(shell) core-shell type), G-1 is S-BE029 manufactured by Shoei Chemical Co., Ltd. (particle size 3-5 nm, material InP:ZnS:SeZn=25:50:25), and G-2 is 900511-1ML manufactured by Aldrich (particle size 3-5 nm, material CdSe(core) / CdS(shell) core-shell type).

[0117] In Tables 1-4, the trifunctional alkoxysilanes are "KBM-503," where R2 is propyl and R3 is methyl in the chemical formula 1((R1OR2)Si(OR3)3) described above, and "KBE-503," where R2 is propyl and R3 is ethyl. The difunctional alkoxysilanes (having two alkoxy groups) are "KBM-502," a difunctional methoxysilane with a methacrylic group, and "KBE-502," a difunctional ethoxysilane with a methacrylic group. The methacrylic-modified silicone with one end is "X-22-2404," and the methacrylic-modified silicone with both ends is "X-22-164A," both manufactured by Shin-Etsu Chemical Co., Ltd. The trifunctional acrylate is "Arronix® M-315," manufactured by Toagosei Co., Ltd.

[0118] In Tables 1-4, the photoacid generators are "CPI-310FG" and "HT-1NF" manufactured by Sunapro Co., Ltd., and "Irgacure290" manufactured by BASF.

[0119] In Tables 1-4, the photoradical generators are "IrgacureOXE01" manufactured by BASF and "ADEKA Cruise NCI-730" manufactured by ADEKA Corporation. [ka]

[0120] In Tables 1-4, the solvent is propylene glycol monomethyl ether acetate (PGMEA).

[0121] In Tables 1-4, the leveling agent is a polyether-type siloxane, trade name "KP-341," manufactured by Shin-Etsu Chemical Co., Ltd.

[0122] [2] Evaluation of photosensitive resin coating (1) Confirmation of aggregates in the photosensitive resin coating Each photosensitive resin composition from Examples 1-18 and Comparative Examples 1-14 was coated onto a silicon wafer using a spin coater to a thickness of 5 μm. Furthermore, pre-baking was performed on a hot plate at 100°C for 2 minutes to remove the solvent. Aggregates in the resulting photosensitive resin film were examined using an optical microscope. Aggregates larger than 1 μm were marked with ×, and those without aggregates or smaller than 1 μm were marked with ○. The results are shown in Tables 5-8.

[0123] (2) Pattern formation and evaluation thereof To form square island patterns with a 1:1 pitch between adjacent patterns using a mask on a silicon substrate, a 5 μm thick photosensitive resin film obtained by spin-coating and pre-baking on a silicon substrate using the same method as described above was exposed using an i-line stepper NSR-2205i11D (manufactured by Nikon Corporation). After irradiation, the substrate was spray-developed with PGMEA for 20 seconds to form the patterns. Subsequently, island patterns with sides of 50 μm, 20 μm, 10 μm, and 5 μm were observed using a scanning electron microscope (SEM), and the smallest pattern size that was not connected to an adjacent island pattern (with a 1:1 pitch) was defined as the critical resolution. Patterns that did not reach a resolution of 50 μm or where development peeling of the pattern occurred were marked with an "X". The results are shown in Tables 5 to 8.

[0124] (3) Evaluation of the luminescence characteristics of the formed pattern Using the patterned samples prepared in (2) above, a quantum efficiency measurement system (QE-2100 manufactured by Otsuka Electronics) was used to measure emission characteristics such as quantum yield, maximum fluorescence wavelength, and full width at half maximum, with an excitation wavelength of 460 nm.

[0125] (4) Evaluation of reliability (adhesion) (JIS K5600-5-6) Each of the photosensitive resin compositions from Examples 1-18 and Comparative Examples 1-14 was coated onto a silicon wafer using a spin coater to a thickness of 5 μm. To remove the solvent, the wafers were heated on a hot plate at 100°C for 2 minutes and dried. The entire surface of the composition coated on the wafer was irradiated with light from a high-pressure mercury lamp (wavelength 365 nm) using a Süss Microtek MA8 mask aligner without a mask, and then immersed in PGMEA for 3 minutes to obtain a resin film. The obtained wafer was then cut six times at 1 mm intervals using a cutter and cutter guide, rotated 90 degrees, and then cut six more times to obtain a test piece with 25 squares of 1 mm x 1 mm. Cellophane adhesive tape (CT-24, manufactured by Nichiban Co., Ltd.) was applied to the obtained test specimen so that it adhered approximately 75 mm, and rubbed with a finger to ensure tight adhesion. Within 5 minutes of tape application, the end of the tape was held and peeled off at an angle close to 60° to the coated film in 0.5 to 1.0 seconds. The results were evaluated according to the classification shown in JIS. Classifications 0 and 1 were marked with ○, classifications 2 and 3 with △, and classifications 4 and 5 with ×. The results are shown in Tables 5 to 8.

[0126] (5) Quantum dot survival rate An island pattern with sides of 4 cm was formed on a glass wafer as the substrate using the same method as in (2). At that time, the absorbance of light at a wavelength of 460 nm was measured for the film in both the exposed and developed states using a spectrophotometer U-3900H (manufactured by Hitachi High-Tech Science Co., Ltd.). Since the absorbance is proportional to the amount of remaining quantum dots, the retention rate of quantum dots that did not disappear during development can be calculated from (absorbance after development) / (absorbance after exposure) × 100. Furthermore, the absorbance was measured again after immersing the patterned sample in PGMEA for one hour, and the retention rate of quantum dots was calculated from (absorbance after solvent resistance test) / (absorbance after exposure) × 100. The results are shown in Tables 5 to 8.

[0127] [Table 5]

[0128] [Table 6]

[0129] [Table 7]

[0130] [Table 8]

[0131] Based on the results above, Examples 1 to 18 demonstrate that by using the photosensitive resin composition of the present invention, it is possible to provide a photosensitive resin composition, a photosensitive resin film, a pattern forming method, and an image display device and optical component equipped with a color filter using the said composition, which have good lithographic properties, a high quantum dot content in the photosensitive resin composition, and good luminescence efficiency.

[0132] On the other hand, Comparative Examples 1 to 14, in which component (B) differed from that of the photosensitive resin composition of the present invention, were inferior to the photosensitive resin composition of the present invention in terms of performance such as lithography and luminescence efficiency.

[0133] This specification includes the following inventions:

[0134] [1]: A photosensitive resin composition characterized by comprising (A) quantum dots, (B) an alkoxysilane having a radical crosslinkable group and containing three alkoxy groups, (C) a photoacid generator, and (D) a photoradical generator.

[0135] [2]: The photosensitive resin composition according to [1] above, characterized in that the radical crosslinkable group of component (B) is a (meth)acryloyl group.

[0136] [3]: The photosensitive resin composition according to [1] or [2] above, further characterized in that the (A) component is 1 to 65% by mass, the (B) component is 30 to less than 99% by mass, the (C) component is 0.01 to 5% by mass, and the (D) component is 0.01 to 5% by mass, based on the total solid content.

[0137] [4]: The photosensitive resin composition according to any one of [1] to [3] above, characterized in that the component (A) is 15 to 50% by mass with respect to the total solid content.

[0138] [5]: The photosensitive resin composition according to any one of [1] to [4] above, characterized in that the (C) component is a gallate salt.

[0139] [6]: The photosensitive resin composition according to any one of [1] to [5] above, further characterized by containing (E) a solvent.

[0140] [7]: A photosensitive resin film characterized by being a dried body of the photosensitive resin composition described in any of [1] to [6] above.

[0141] [8]: A pattern forming method comprising: (i) forming a photosensitive resin film on a substrate using a photosensitive resin composition described in any of [1] to [6] above; (ii) exposing the photosensitive resin film to light; and (iii) developing the exposed photosensitive resin film with a developer to form a pattern.

[0142] [9]: An optical component characterized by comprising a patterned cured film of the photosensitive resin composition described in any of [1] to [6] above.

[0143]

[10] : A color filter characterized by comprising a patterned cured film of the photosensitive resin composition described in any of [1] to [6] above.

[0144]

[11] : An image display device characterized by comprising the color filter described in

[10] above.

[0145] It should be noted that the present invention is not limited to the embodiments described above. The embodiments described above are illustrative, and any configuration that is substantially identical to the technical idea described in the claims of the present invention and achieves similar effects is included within the technical scope of the present invention.

Claims

1. (A) Quantum dots, (B) Alkoxysilane having a radical crosslinking group and containing three alkoxy groups, (C) Photoacid generator, and (D) Photoradical Generator A photosensitive resin composition characterized by containing the following.

2. The photosensitive resin composition according to claim 1, characterized in that the radical crosslinkable group of component (B) is a (meth)acryloyl group.

3. Furthermore, each of the following applies to the total solids The above-mentioned component (A): 1 to 65% by mass, The above-mentioned component (B): 30 to less than 99% by mass, Component (C): 0.01 to 5% by mass, and Component (D): 0.01 to 5% by mass The photosensitive resin composition according to claim 1, characterized in that it is the same as the one described in claim 1.

4. The photosensitive resin composition according to claim 3, characterized in that the aforementioned component (A) is 15 to 50% by mass.

5. The photosensitive resin composition according to claim 1, characterized in that the (C) component is a gallate salt.

6. Furthermore, the photosensitive resin composition according to claim 1 is characterized in that it contains (E) a solvent.

7. A photosensitive resin film characterized by being a dried body of the photosensitive resin composition described in any one of claims 1 to 6.

8. (i) A step of forming a photosensitive resin film on a substrate using the photosensitive resin composition according to any one of claims 1 to 6, (ii) A step of exposing the photosensitive resin film, and (iii) A step of developing the exposed photosensitive resin film with a developer to form a pattern, A pattern forming method characterized by including the following.

9. An optical component characterized by comprising a patterned cured film of a photosensitive resin composition according to any one of claims 1 to 6.

10. A color filter characterized by comprising a patterned cured film of the photosensitive resin composition according to any one of claims 1 to 6.

11. An image display device characterized by comprising the color filter described in claim 10.

Images