Charged particle beam image acquisition apparatus and charged particle beam image acquisition method

The multi-beam system addresses inefficiencies by optimizing beam arrangement and scanning methods to increase beam count and block size, improving pattern inspection precision and throughput in semiconductor manufacturing.

JP2026119784APending Publication Date: 2026-07-21NUFLARE TECH INC
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
NUFLARE TECH INC
Filing Date
2025-01-08
Publication Date
2026-07-21

AI Technical Summary

Technical Problem

Existing multi-beam systems face limitations in increasing the number of beams due to deflection amplitude and beam array size constraints, leading to inefficiencies in pattern inspection of ultra-fine semiconductor patterns, with issues such as crosstalk and reduced block area size.

Method used

A multi-beam system with a specific beam arrangement and scanning method, where the inspection area is divided into block regions with adjusted beam pitches and offsets, allowing for increased beam count while maintaining acceptable deflection amplitude and block size, using a movable stage and deflector to scan and deflect beams efficiently.

Benefits of technology

The solution enables increased block size and beam count without exceeding deflection limits, improving throughput and reducing unnecessary scanning, thus enhancing the precision and efficiency of pattern inspection.

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Abstract

The present invention provides a device that allows for increasing the number of beams while increasing the block size and keeping the deflection amplitude within acceptable limits when acquiring images using a multi-beam system. [Solution] The charged particle beam image acquisition device includes a primary electron optical system that irradiates a substrate with a multi-primary beam composed of multiple charged particle beams arranged in a second direction with a pitch of Py, where multiple beam rows of Nx beams arranged in a first direction with a pitch of Px, and multiple charged particle beams arranged in a second direction with a pitch of Py, with each beam row being arranged in a first direction with a pitch of Px, and each beam row being arranged in a second direction with a pitch of Py, shifting relative to each other by Px / My in the first direction with a period of My; and a deflector that scans a group of Nx × Ny block regions arranged in the same arrangement as the multi-primary beam from a group of block regions 30 obtained by dividing the inspection area of ​​the substrate into a size obtained by Px / Mx in the first direction and Py in the second direction, and deflects the multi-primary beam collectively to the next group of Nx × Ny new block regions located Nx in the first direction each time the scan is completed, where Mx is 2.
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