Multilayer electronic components

Abstract

This suppresses the increase in equivalent series resistance (ESR) that occurs when a conductive resin layer is applied to the external electrode. [Solution] The laminated electronic component 100 includes a dielectric layer 111 and internal electrodes 121, 122 arranged alternately in the X direction, and is connected to first and second surfaces 1, 2 facing each other in the X direction. The main body 110 includes third and fourth surfaces 3, 4 facing each other in the second direction, the first surface, and fifth and sixth surfaces facing each other in the third direction. The external electrodes 130, 140 are arranged on the third and fourth surfaces and include electrode layers 131, 141 containing a conductive metal and conductive resin layers 132, 142 arranged on the electrode layers. In the external electrodes, when the regions arranged on the third and fourth surfaces are designated as connection portions A and the regions arranged on the first and second surfaces are designated as band portions B, the conductive resin layers include first conductive resin layers 132a, 142a arranged in the band portions and containing Cu and a first resin, and second conductive resin layers 132b, 142b arranged in the connection portions and containing an intermetallic compound and a second resin.

Description

[Technical Field]

[0001] This invention relates to a stacked electronic component. [Background technology]

[0002] A multilayer ceramic capacitor (MLCC), a type of multilayer electronic component, is a chip-type capacitor that is mounted on the printed circuit boards of various electronic products, such as video equipment like liquid crystal displays (LCDs) and plasma display panels (PDPs), computers, smartphones and mobile phones, on-board chargers (OBCs) in electric vehicles, and DC-DC converters, and plays the role of charging or discharging electricity.

[0003] Recently, as MLCCs (Multi-Layer Ceramic Capacitors) have become smaller and more powerful, ensuring high reliability of MLCCs has become increasingly important.

[0004] One proposed method for improving the reliability of MLCCs involves applying a conductive resin layer to the external electrodes to absorb mechanical and thermal stress. Such a conductive resin layer can be formed with a structure containing Cu (copper) and a base resin, or with a structure containing an intermetallic compound (IMC) and a base resin.

[0005] On the other hand, while the base resin contained in the conductive resin layer plays a role in improving the flexural strength of MLCCs, it is a non-conductive material and can therefore increase the equivalent series resistance (ESR) of the MLCC. For this reason, attempts have been made to reduce the ESR of MLCCs by applying intermetallic compounds (IMCs) as the conductive metal in the conductive resin layer. However, intermetallic compounds tend to form fine bridges between metal particles, which may be detrimental to improving the flexural strength of MLCCs compared to using Cu particles as the conductive metal in the conductive resin layer.

[0006] Therefore, in order to improve the bending strength of MLCCs, it is necessary to improve the structure of the external electrode so that the increase in ESR can be suppressed even when a conductive resin layer is applied to the external electrode. [Overview of the project] [Problems that the invention aims to solve]

[0007] One of the several objectives of the present invention is to suppress the increase in ESR that may occur when a conductive resin layer is applied to an external electrode.

[0008] However, the objectives of the present invention are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Means for solving the problem]

[0009] A stacked electronic component according to one embodiment of the present invention includes a body comprising a dielectric layer and internal electrodes alternately arranged with the dielectric layer in a first direction, the body comprising a first and second surface facing the first direction, a third and fourth surface connected to the first and second surfaces and facing the second direction, a fifth and sixth surface connected to the first, second, third and fourth surfaces and facing the third direction, and an external electrode comprising an electrode layer disposed on the third and fourth surfaces and containing a conductive metal, and a conductive resin layer disposed on the electrode layer, wherein in the external electrode, the region disposed on the third or fourth surface is a connecting portion, and the region disposed on the first or second surface is a band portion, the conductive resin layer may include a first conductive resin layer disposed on the band portion and containing Cu and a first resin, and a second conductive resin layer disposed on the connecting portion and containing an intermetallic compound and a second resin. [Effects of the Invention]

[0010] One of the several effects of the present invention is to ensure the bending strength of a laminated electronic component and suppress the increase in ESR by arranging a first conductive resin layer containing Cu and a first resin in the band portion of the external electrode and a second conductive resin layer containing an intermetallic compound and a second resin in the connection portion.

[0011] However, the diverse yet beneficial advantages and effects of the present invention are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Brief explanation of the drawing]

[0012] [Figure 1] A schematic perspective view of a stacked electronic component according to one embodiment of the present invention and another embodiment is shown. [Figure 2] A schematic cross-sectional view along the line I-I' in Figure 1 is shown. [Figure 3] A schematic cross-sectional view along the line I-I' in Figure 1 is shown. [Figure 4] A schematic cross-sectional view along the line II-II' in Figure 1 is shown. [Figure 5]Schematically shows an exploded perspective view of the main body according to an embodiment. [Figure 6] Schematically shows an enlarged view of the PA region in FIG. 2. [Figure 7] Schematically shows an enlarged view of the PB region in FIG. 2. [Figure 8] It is a graph showing the results of measuring the equivalent series resistance (ESR) in the laminated electronic component according to the comparative example and the embodiment.

Mode for Carrying Out the Invention

[0013] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Also, the embodiments of the present invention are provided to more fully explain the present invention to an ordinary technician. Therefore, the shape and size of elements in the drawings can be exaggerated for a clearer explanation, and elements denoted by the same reference numerals in the drawings are the same elements.

[0014] And, in order to clearly explain the present invention in the drawings, parts not related to the explanation are omitted, and the size and thickness of each configuration shown in the drawings are arbitrarily shown for convenience of explanation, so the present invention is not necessarily limited to what is shown in the drawings. Note that components having the same function within the scope of the same concept are described using the same reference numerals. Further, throughout the specification, when a certain part says that a certain component "includes", this does not exclude other components unless otherwise stated, and means that other components may be further included.

[0015] In the drawings, the X direction can mean the first direction or the thickness direction, the Y direction can mean the second direction or the length direction, the Z direction can mean the third direction or the width direction, and the lamination direction of the internal electrodes or the dielectric layer may be the thickness direction or the width direction.

[0016] FIG. 1 schematically shows a perspective view of a stacked electronic component according to an embodiment of the present invention and still another embodiment. FIG. 2 schematically shows a cross-sectional view taken along line I-I' of FIG. 1. FIG. 3 schematically shows a cross-sectional view taken along line I-I' of FIG. 1. FIG. 4 schematically shows a cross-sectional view taken along line II-II' of FIG. 1. FIG. 5 schematically shows an exploded perspective view of a main body according to an example. FIG. 6 schematically shows an enlarged view of the PA region of FIG. 2. FIG. 7 schematically shows an enlarged view of the PB region of FIG. 2.

[0017] Hereinafter, referring to FIGS. 1 to 7, a stacked electronic component 100 according to an embodiment of the present invention, a stacked electronic component 100' according to still another embodiment of the present invention, and various examples thereof will be described in detail.

[0018] The stacked electronic component 100 according to an embodiment of the present invention and the stacked electronic component 100' according to still another embodiment of the present invention differ in the structure of the external electrodes 130, 140, 130', 140'. However, since other configurations excluding the external electrodes 130, 140, 130', 140' can be substantially the same, duplicate explanations can be omitted.

[0019] A stacked electronic component 100 according to one embodiment of the present invention includes a dielectric layer 111 and internal electrodes 121, 122 arranged alternately with the dielectric layer 111 in a first direction, a body 110 including a first surface 1 and a second surface 2 facing each other in a first direction, a third surface 3 and a fourth surface 4 connected to the first and second surfaces and facing each other in a second direction, a fifth surface 5 and a sixth surface 6 connected to the first surface 1, the second surface 2, the third surface 3 and the fourth surface 4 and facing each other in a third direction, and electrode layers 131, 141 and 131, 14 arranged on the third surface 3 and the fourth surface 4 and including conductive metal 110. The external electrodes 130 and 140 include conductive resin layers 132 and 142 disposed on surface 1, and in the external electrodes 130 and 140, the region disposed on the third surface 3 or the fourth surface 4 is defined as the connecting portion A, and the region disposed on the first surface 1 or the second surface 2 is defined as the band portion B. The conductive resin layers 132 and 142 may include first conductive resin layers 132a and 142a disposed on the band portion B and containing Cu(21) and a first resin 22, and second conductive resin layers 132b and 142b disposed on the connecting portion A and containing an intermetallic compound 31 and a second resin 32.

[0020] Referring to Figure 2, the main body 110 may include a dielectric layer 111 and internal electrodes 121 and 122 that are alternately arranged with respect to the dielectric layer 111 in a first direction.

[0021] There are no particular restrictions on the specific shape of the main body 110, but as shown in the figure, the main body 110 can be a hexahedron or a similar shape. Due to the shrinkage of the ceramic powder contained in the main body 110 during the firing process, the main body 110 is not a perfectly straight hexahedron, but can be substantially hexahedron-shaped.

[0022] The main body 110 may have a first surface 1 and a second surface 2 facing each other in a first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and facing each other in a second direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1 and the second surface 2 and connected to the third surface 3 and the fourth surface 4 and facing each other in a third direction.

[0023] The plurality of dielectric layers 111 forming the body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated so as to be difficult to confirm without using a scanning electron microscope (SEM).

[0024] According to an embodiment of the present invention, the raw material for forming the dielectric layer 111 is not particularly limited as long as sufficient capacitance can be obtained. For example, a barium titanate-based material, a lead composite perovskite-based material, a calcium zirconate-based material, a strontium titanate-based material, or the like can be used.

[0025] When using a barium titanate-based material as the raw material for forming the dielectric layer 111, the dielectric layer 111 can contain a BaTiO3-based ceramic substance. Examples of the ceramic substance include BaTiO3, (Ba 1-x Ca x )TiO3 (0 < x < 1) in which Ca (calcium), Zr (zirconium), etc. are partially solid-dissolved in BaTiO3, Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1), or Ba(Ti 1-y Zr y )O3 (0 < y < 1), etc. On the other hand, when using a calcium zirconate-based material as the raw material for forming the dielectric layer 111, the dielectric layer 111 can contain a CaZrO3-based ceramic substance.

[0026] In addition, the dielectric layer can contain a BaTiO3-based ceramic substance and a CaZrO3-based ceramic substance alone or in combination.

[0027] In addition, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to the dielectric layer 111 according to the object of the present invention.

[0028] On the other hand, since the dielectric layer 111 is in a fired state, the ceramic powder used as the material for the dielectric layer 111 can form dielectric crystal grains and crystal grain boundaries.

[0029] Furthermore, the average thickness td of the dielectric layer 111 is not particularly limited. For example, in order to achieve miniaturization of the multilayer electronic component 100, the average thickness td of the dielectric layer 111 may be 0.35 μm or less, and in order to ensure the reliability of the multilayer electronic component 100 in a high-temperature, high-voltage environment, the average thickness td of the dielectric layer 111 may be 1 μm or more.

[0030] On the other hand, the average thickness td of the dielectric layer 111 can mean the average thickness td of one or more of the multiple dielectric layers 111.

[0031] The average thickness td of the dielectric layer 111 can be calculated by taking the average of the thicknesses measured at the 1 / 4, 2 / 4, and 3 / 4 points, which divide the dielectric layer into four equal parts in the length direction, using one dielectric layer adjacent to the point where the longitudinal center line and the thickness center line of the capacitance-forming portion intersect as a reference. This measurement can be further generalized by extending this measurement to the two upper and two lower dielectric layers that are equally spaced, using one dielectric layer adjacent to the point where the longitudinal center line and the thickness center line of the capacitance-forming portion intersect as a reference.

[0032] Referring to Figure 2, the internal electrodes 121 and 122 may be arranged alternately in the first direction with the dielectric layer 111 in between.

[0033] The internal electrodes 121 and 122 may include a first internal electrode 121 and a second internal electrode 122. The first internal electrode 121 and the second internal electrode 122 are arranged alternately facing each other across the dielectric layer 111 that constitutes the main body 110, and can be connected to the third surface 3 and the fourth surface 4 of the main body 110, respectively. Specifically, one end of the first internal electrode 121 can be connected to the third surface, and one end of the second internal electrode 122 can be connected to the fourth surface. That is, in one embodiment, the internal electrodes 121 and 122 can be in contact with the third surface 3 or the fourth surface 4.

[0034] As shown in Figure 2, the first internal electrode 121 is exposed via the third surface 3, separated from the fourth surface 4, and the second internal electrode 122 can be exposed via the fourth surface 4, separated from the third surface 3. The first external electrode 130 can be placed on the third surface 3 of the main body and connected to the first internal electrode 121, and the second external electrode 140 can be placed on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0035] In other words, the first internal electrode 121 is not connected to the second external electrode 132 but is connected to the first external electrode 131, and the second internal electrode 122 is not connected to the first external electrode 131 but is connected to the second external electrode 132. Therefore, the first internal electrode 121 can be formed at a certain distance from the fourth surface 4, and the second internal electrode 122 can be formed at a certain distance from the third surface 3. In this case, the first internal electrode 121 and the second internal electrode 122 can be electrically separated from each other by the dielectric layer 111 placed in between.

[0036] The conductive metals contained in the internal electrodes 121 and 122 may be metallic elements with excellent electrical conductivity. For example, the first conductive metal (m) may be one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), and titanium (Ti).

[0037] Furthermore, the internal electrodes 121 and 122 can be formed by printing a conductive paste for internal electrodes containing one or more of the following onto a ceramic green sheet: nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and their alloys. While screen printing or gravure printing can be used as the printing method for the conductive paste for internal electrodes, the present invention is not limited thereto.

[0038] On the other hand, the average thickness te of the internal electrodes 121 and 122 does not need to be particularly limited. For example, in order to achieve miniaturization of the multilayer electronic component 100, the average thickness te of the internal electrodes 121 and 122 may be 0.35 μm or less, and in order to ensure the reliability of the multilayer electronic component 100 in a high-temperature, high-voltage environment, the average thickness te of the internal electrodes 121 and 122 may be 1 μm or more.

[0039] Note that the average thickness te of the internal electrodes 121 and 122 can refer to the average thickness te of one or more of the multiple internal electrodes 121 and 122.

[0040] The average thickness te of the internal electrodes 121 and 122 can be calculated by taking the thickness of the internal electrodes at points 1 / 4, 2 / 4, and 3 / 4 of the length of the internal electrode, which is divided into four equal parts in the length direction. This measurement is taken from images of the cross-sections in the first and second directions of the main body 110, polished to the center in the third direction, scanned with a scanning electron microscope (SEM). The average thickness of the internal electrodes can be calculated by taking the thickness of the internal electrodes at points 1 / 4, 2 / 4, and 3 / 4 of the length of the internal electrode, with reference to one internal electrode layer adjacent to the point where the center line in the length direction of the capacitance-forming portion and the center line in the thickness direction intersect. If this measurement is extended to the two upper and two lower internal electrodes that are equally spaced with reference to one internal electrode layer adjacent to the point where the center line in the length direction of the capacitance-forming portion and the center line in the thickness direction intersect, the average thickness of the internal electrodes can be further generalized.

[0041] Referring to Figure 2, the main body 110 may include a capacitance forming section Ac which is located inside the main body 110 and includes first internal electrodes 121 and second internal electrodes 122 which are alternately arranged with a dielectric layer 111 in between, and cover sections 112 and 113 which are arranged on one and the other surface of the capacitance forming section Ac in a first direction.

[0042] The capacitance-forming portion Ac is the part that contributes to the capacitance formation of the capacitor, and can be formed by repeatedly stacking multiple first internal electrodes 121 and second internal electrodes 122 with a dielectric layer 111 in between, as shown in Figure 7.

[0043] Referring to Figure 5, the cover portions 112 and 113 can be formed by stacking a single dielectric layer or two or more dielectric layers in the thickness direction on the upper and lower surfaces of the capacitance forming portion Ac, respectively, and can essentially serve to prevent damage to the internal electrodes due to physical or chemical stress.

[0044] The cover portions 112 and 113 do not contain internal electrodes and can contain the same material as the dielectric layer 111. That is, the cover portions 112 and 113 can contain ceramic materials, for example, barium titanate (BaTiO3) based ceramic materials.

[0045] On the other hand, the average thickness tc of the cover portions 112 and 113 is not particularly limited. However, in order to more easily achieve miniaturization and high capacitance of the stacked electronic component, the average thickness tc of the cover portions 112 and 113 may be 15 μm or less.

[0046] The average thickness of the cover portions 112 and 113 can represent the size in the first direction, and can be the average value of the sizes of the cover portions 112 and 113 in the first direction measured at five equally spaced points on the upper or lower part of the volume forming portion Ac.

[0047] In one embodiment, margin portions 114 and 115 may be arranged on one and the other surface of the volume-forming portion Ac in the third direction.

[0048] Referring to Figure 7, the margin portions 114 and 115 may include a margin portion 114 located on the fifth surface 5 of the main body 110 and a margin portion 115 located on the sixth surface 6. That is, the margin portions 114 and 115 may be located on both end faces of the main body 110 in the third direction (width direction).

[0049] On the other hand, the margin portions 114 and 115 can refer to the regions between the interface between both ends of the first internal electrode 121 and the second internal electrode 122 and the main body 110, as shown in Figure 6.

[0050] The margins 114 and 115 can essentially serve to prevent damage to the internal electrodes due to physical or chemical stress.

[0051] The margin portions 114 and 115 may be formed by applying a conductive paste to the ceramic green sheet, except for the areas where the margin portions are formed, to form internal electrodes.

[0052] Furthermore, in order to suppress the step caused by the internal electrodes 121 and 122, after cutting the laminated internal electrodes so that they are exposed on the fifth and sixth surfaces 5 and 6 of the main body, a single dielectric layer or two or more dielectric layers can be laminated in the third direction (width direction) on both sides of the capacitance forming portion Ac to form margin portions 114 and 115.

[0053] The width of the margin portions 114 and 115 does not need to be particularly limited. However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the average width of the margin portions 114 and 115 may be 15 μm or less.

[0054] The average width of the margin portions 114 and 115 can represent the average size of the margin portions 114 and 115 in the third direction, and can be the average value of the sizes of the margin portions 114 and 115 in the third direction measured at five equally spaced points on the side surface of the volume forming portion Ac.

[0055] Referring to Figure 1, external electrodes 130 and 140 are positioned on the main body 110.

[0056] Referring to Figures 1 and 2, the external electrodes 130 and 140 may include a first external electrode 130 which is positioned on the main body 110 and connected to a first internal electrode 121, and a second external electrode 140 which is positioned on the main body 110 and connected to a second internal electrode 122, and is positioned at a distance from the first external electrode 130.

[0057] In this case, the direction in which the first external electrode 130 and the second external electrode 140 are separated from each other can be considered as the second direction.

[0058] In this invention, a structure is described in which a stacked electronic component 100 has two external electrodes 130 and 140. However, the number and shape of the external electrodes 130 and 140 can be changed according to the form of the internal electrodes 121 and 122 or other purposes.

[0059] The external electrodes 130 and 140 are arranged on the third surface 3 and the fourth surface 4, and may include electrode layers 131 and 141 containing a conductive metal.

[0060] The electrode layers 131 and 141 can directly contact at least a portion of the internal electrodes 121 and 122, thereby ensuring electrical connectivity between the external electrodes 130 and 140 and the internal electrodes 121 and 122.

[0061] Referring to Figures 6 and 7, the electrode layers 131 and 141 may be fired electrodes containing conductive metal 11 and glass 12, and although not shown in Figures 6 and 7, they may also be plated layers containing conductive metal 11 but not glass 12. In other words, the electrode layers 131 and 141 can contain conductive metal 11 and, in some cases, further contain glass 12.

[0062] The electrode layers 131 and 141 may be formed by dipping a conductive paste containing a conductive metal and glass onto the main body 110, by transferring a sheet containing a conductive metal, or by electroless plating on the main body 110, but the present invention is not limited thereto.

[0063] While any material with excellent electrical conductivity can be used as the conductive metal in the electrode layers 131 and 141, it is not particularly limited. For example, the conductive metal may be one or more of nickel (Ni), copper (Cu), and their alloys.

[0064] Referring to Figure 2, conductive resin layers 132 and 142 can be arranged on the electrode layers 131 and 141. The conductive resin layers 132 and 142 are layers containing metal and resin, and may have a structure in which the metal is dispersed within the resin.

[0065] Since the conductive resin layers 132 and 142 contain metals 21 and 31, they can be electrically connected to the electrode layers 131 and 141, and furthermore, since they contain resins 22 and 32, the bending strength of the laminated electronic component 100 can be improved.

[0066] On the other hand, the resins 22 and 32 contained in the conductive resin layers 132 and 142 are likely to be non-conductive materials or have lower electrical conductivity than metals, which can increase the equivalent series resistance (ESR) of the multilayer electronic component 100. Therefore, conventional attempts have been made to form the entire conductive resin layers 132 and 142 as IMC-resin layers containing intermetallic compounds (IMC) and resin. However, intermetallic compounds (IMC) tend to form fine bridges between metal particles, which may be detrimental to improving the bending strength of the multilayer electronic component 100 compared to when the entire conductive resin layers 132 and 142 are formed as Cu-resin layers containing Cu and resin.

[0067] Therefore, in one embodiment of the present invention, by organically arranging an IMC-resin layer, which is advantageous for reducing the equivalent series resistance (ESR) of the multilayer electronic component 100, and a Cu-resin layer, which is advantageous for improving the bending strength, the aim is to simultaneously secure the effect of reducing the equivalent series resistance (ESR) and the effect of improving the bending strength of the multilayer electronic component 100.

[0068] First, the external electrodes 130 and 140 according to one embodiment of the present invention can be divided into various regions depending on their position on the main body 110. Specifically, referring to Figure 2, the external electrodes 130 and 140 can be divided into a connecting portion A, which is a region located on the third surface 3 or the fourth surface 4, and a band portion B, which is a region located on the first surface 1 or the second surface 2.

[0069] The connection portion A is a region connected to the internal electrode, and having low resistance may be advantageous in reducing the ESR of the laminated electronic component 100. The band portion B is located on the first surface 1 or the second surface 2 of the main body 110, and having excellent mechanical strength or ductility may be advantageous in improving the bending strength of the laminated electronic component 100.

[0070] According to one embodiment of the present invention, the conductive resin layers 132 and 142 may include first conductive resin layers 132a and 142a arranged in the band portion B and containing Cu(21) and a first resin 22, and second conductive resin layers 132b and 142b arranged in the connecting portion A and containing an intermetallic compound 31 and a second resin 32.

[0071] Since the first conductive resin layers 132a and 142a contain Cu(21) and the first resin 22, they may have superior ductility and mechanical strength compared to the second conductive resin layers 132b and 142b, which contain the intermetallic compound 31 and the second resin 32. Since the second conductive resin layers 132b and 142b contain the intermetallic compound 31 and the second resin 32, which have a good tendency to form bridges between particles, they may have lower resistance than the first conductive resin layers 132a and 142a.

[0072] According to one embodiment of the present invention, by forming first conductive resin layers 132a and 142a with excellent mechanical strength and ductility on the band portion B which requires excellent mechanical strength or ductility, and forming second conductive resin layers 132b and 142b with low resistance on the connection portion A which requires a low resistance, the bending strength of the laminated electronic component 100 can be improved while suppressing an increase in equivalent series resistance (ESR).

[0073] On the other hand, although not shown in Figure 2, the external electrodes 130 and 140 according to one embodiment may include side band portions which are regions located on the fifth surface 5 and the sixth surface 6.

[0074] The type of intermetallic compound 31 contained in the second conductive resin layer is not particularly limited. For example, the intermetallic compound 31 may include one or more of Ni-Sn intermetallic compounds, Ag-Sn intermetallic compounds, and Cu-Sn intermetallic compounds.

[0075] On the other hand, examples of Ni-Sn intermetallic compounds include Ni3Sn and Ni3Sn4, examples of Ag-Sn intermetallic compounds include Ag3Sn, and examples of Cu-Sn intermetallic compounds include Cu6Sn5 and Cu3Sn, but the present invention is not limited to these.

[0076] The types of the first resin 22 and the second resin 32 may be, for example, thermosetting resins. Thermosetting resins may include, for example, epoxy resins, but the present invention is not limited thereto, and may also include, for example, bisphenol A resins, glycol epoxy resins, novolac epoxy resins, or derivatives thereof that have a small molecular weight and are liquid at room temperature.

[0077] Since the second conductive resin layers 132b and 142b are located at the connection portion A of the external electrodes 130 and 140, and the first conductive resin layers 132a and 132a are located at the band portion B of the external electrodes 130 and 140, even if the specific gravity of the intermetallic compound 31 in the second conductive resin layers 132b and 142b increases, the decrease in the bending strength of the laminated electronic component 100 can be suppressed, and the equivalent series resistance (ESR) of the laminated electronic component 100 can be further reduced.

[0078] On the other hand, the specific gravity of the intermetallic compound 31 in the second conductive resin layers 132b and 142b can be expressed as the area fraction of the intermetallic compound 31 in the second conductive resin layers 132b and 142b, and in one embodiment, the area fraction of the intermetallic compound 31 in the second conductive resin layers 132b and 142b may be greater than the area fraction of Cu(21) in the first conductive resin layers 132a and 142a.

[0079] In one embodiment, the area fraction of Cu(21) in the first conductive resin layers 132a and 142a may be 0.50 or more, more preferably 0.80 or more. On the other hand, the upper limit of the area fraction of Cu(21) in the first conductive resin layers 132a and 142a is not particularly limited and may be, for example, 0.95 or less.

[0080] In one embodiment, the area fraction of the intermetallic compound 31 in the second conductive resin layers 132b and 142b may be 0.50 or more, more preferably 0.80 or more. This can further enhance the effect of reducing the equivalent series resistance (ESR) of the laminated electronic component 100. On the other hand, when the second conductive resin layers 132b and 142b are formed in both the connection portion A and the band portion B, if the area fraction of the intermetallic compound 31 is 0.50 or more, or 0.80 or more, the bending strength of the laminated electronic component 100 may decrease due to excessive bonding between the particles of the intermetallic compound 31. However, according to one embodiment of the present invention, the second conductive resin layers 132b and 142b are formed in the connection portion A, and the first conductive resin layers 132a and 142a are formed in the band portion B. Therefore, even if excessive bonding between the particles of the intermetallic compound 31 is formed, it is possible to suppress a decrease in the bending strength of the laminated electronic component 100.

[0081] On the other hand, the upper limit of the area fraction of the intermetallic compound 31 in the second conductive resin layers 132b and 142b is not particularly limited; for example, the area fraction of the intermetallic compound 31 in the second conductive resin layers 132b and 142b may be 0.95 or less.

[0082] The area fraction of Cu(21) in the first conductive resin layers 132a and 142a and the area fraction of the intermetallic compound 31 in the second conductive resin layers 132b and 142b can be determined by using a scanning electron microscope (SEM) to capture multiple points (points) in a 60 μm × 60 μm region at the center of the second direction of the first conductive resin layers 132a and 142a, and a 60 μm × 60 μm region at the center of the first direction of the second conductive resin layers 132b and 142b, using the cross-sections in the first and second directions, polished to halfway point in the third direction of the multilayer electronic component 100, as a reference. These points are then measured using a computer program such as ImageJ, based on the magnitude of brightness and darkness, and the average value is calculated. However, the present invention is not limited to this.

[0083] On the other hand, the method for measuring the composition of the intermetallic compound 31 in the second conductive resin layers 132b and 142b is not particularly limited. For example, in the cross-sections in the first and second directions of the multilayer electronic component 100, which have been polished to the halfway point in the third direction, a 60 μm × 60 μm region at the center of the second conductive resin layers 132b and 142b in the first direction can be imaged with a scanning electron microscope (SEM), and then each component can be mapped using EDS mode for quantitative / qualitative analysis. In this case, the content of each element can be expressed in terms of mass percentage (wt%), atomic percentage (at%), or mole percentage (mol%), and the content of other specific components relative to the content of a specific component can also be expressed.

[0084] The formation regions of the second conductive resin layers 132b and 142b are preferably formed in a certain portion or more of the connection portion A in order to improve the effect of reducing the equivalent series resistance (ESR) of the laminated electronic component 100. Specifically, when the maximum size of the main body 110 in the first direction is T, the second conductive resin layers 132b and 142b can be arranged on regions of 0.3T or more above and below the central part of the main body 110 in the first direction, with the central part of the main body 110 in the first direction as the reference point.

[0085] In one embodiment, the ends of the first conductive resin layers 132a, 142a and the second conductive resin layers 132b, 142b may be in contact with each other. The ends where the first conductive resin layers 132a, 142a and the second conductive resin layers 132b, 142b are in contact may be formed on the band portion B as shown in Figure 2, but the present invention is not limited thereto, and can also be formed on the corner portion C of the external electrodes 130, 140 or on the boundary between the band portion B and the corner portion C.

[0086] Referring to Figures 2 and 3, the external electrodes 130, 140, 130', and 140' can include a corner portion C, which is a region connecting the connection portion A and the band portion B. In this case, the first conductive resin layers 132a and 142a can be positioned on the band portion B, as shown in Figure 2, so as not to extend beyond the corner portion C. This can significantly reduce the equivalent series resistance (ESR) of the multilayer electronic component 100.

[0087] Referring to Figure 3, a stacked electronic component 100' according to yet another embodiment of the present invention may include external electrodes 130', 140' disposed on the main body 110, and the external electrodes 130', 140' may include electrode layers 131, 141 containing a conductive metal disposed on the third surface 3 and the fourth surface 4, and conductive resin layers 132', 142' disposed on the electrode layers 131, 141.

[0088] Referring to Figure 3, the conductive resin layers 132' and 142' may include first conductive resin layers 132a' and 142a', which are located in the band portion B of the external electrodes 130' and 140' and contain Cu and a first resin, as well as second conductive resin layers 132b' and 142b', which are located in the connection portion A of the external electrodes 130' and 140' and contain an intermetallic compound and a second resin.

[0089] On the other hand, referring to Figure 3, the external electrodes 130' and 140' may include a corner portion C, which is a region connecting the connection portion A and the band portion B. In this case, the first conductive resin layers 132a' and 142a' may be arranged extending from the band portion B to the corner portion C, as shown in Figure 3. This can significantly improve the bending strength of the laminated electronic component 100.

[0090] In one embodiment, plating layers 133, 134, 143, and 144 may be arranged on the conductive resin layers 132, 142, 132', and 142'.

[0091] The plating layers 133, 134, 143, and 144 can play a role in improving the sealing and mounting characteristics of the multilayer electronic components 100 and 100'.

[0092] Referring to Figures 2 and 3, the plating layers 133, 134, 143, and 144 can cover the edges of the conductive resin layers 132, 143, 132', and 142', thereby preventing a decrease in the moisture resistance reliability of the multilayer electronic component 100.

[0093] The types of plating layers 133, 134, 143, and 144 are not particularly limited and may be plating layers containing one or more of Ni, Sn, Pd, and their alloys, and may be formed in multiple layers.

[0094] As a more specific example for the plating layers 133, 134, 143, and 144, the plating layers 133, 134, 143, and 144 may be configured such that Ni plating layers 133, 143 and Sn plating layers 134, 144 are sequentially arranged on conductive resin layers 132, 142, 132', and 142', or they may be configured such that Sn plating layers, Ni plating layers, and Sn plating layers are sequentially formed. Furthermore, the plating layers may include multiple Ni plating layers and / or multiple Sn plating layers.

[0095] The method for forming the plating layers 133, 134, 143, and 144 is not particularly limited, and for example, electroless plating, electrolytic plating, etc., can be used.

[0096] Since the second conductive resin layers 132b, 142b, 132b', and 142b' contain an intermetallic compound (IMC), some of the metal elements in the intermetallic compound (IMC) can form an alloy with the conductive metal of the first electrode layers 131 and 141, thereby improving the interlayer adhesion and electrical connectivity of the external electrodes 130 and 140. Specifically, in one embodiment with reference to Figure 7, intermediate layers 131' and 141' can be placed between the first electrode layers 131 and 141 and the second conductive resin layers 132b, 142b, 132b', and 142b'.

[0097] The intermediate layers 131' and 141' can be formed by some of the metal elements of the intermetallic compound (IMC) 31 migrating or diffusing toward the electrode layers 131 and 141, forming an alloy with the conductive metal 11 contained in the electrode layers 131 and 141, and can therefore be composed of an intermetallic compound (IMC). Specifically, in one embodiment, the intermediate layers 131' and 141' can contain one or more of the Ni-Sn intermetallic compound, Ag-Sn intermetallic compound, and Cu-Sn intermetallic compound.

[0098] On the other hand, the types of intermetallic compounds 31 contained in the intermediate layers 131', 141' and the second conductive resin layers 132b, 142b, 132b', 142b' do not necessarily have to be the same, and may consist of different intermetallic compounds.

[0099] In the present invention, the method for adjusting the formation regions of the first conductive resin layers 132a, 142a, 132a', 142a' and the second conductive resin layers 132b, 142b, 132b', 142b' is not particularly limited. For example, a method for adjusting the printing or dipping regions of the first conductive resin layers 132a, 142a, 132a', 142a' and the second conductive resin layers 132b, 142b, 132b', 142b' can be used.

[0100] To give a specific example, after forming electrode layers 131 and 141 on the main body 110, the second conductive resin layers 132b, 142b, 132b', and 142b' are formed in the designed area by wheel-type coating and then cured. After that, the main body 110, on which the electrode layers 131 and 141 and the second conductive resin layers 132b, 142b, 132b', and 142b' are formed, is dipped to form the first conductive resin layers 132a, 142a, 132a', and 142a'. Then, by wiping or removing the areas of the first conductive resin layers 132a, 142a, 132a', and 142a' formed at the connection points, the formation areas of the first conductive resin layers 132a, 142a, 132a', and 142a' and the second conductive resin layers 132b, 142b, 132b', and 142b' can be adjusted.

[0101] On the other hand, if the first conductive resin layers 132a, 142a, 132a', and 142a' are arranged so as not to extend beyond the corner portions of the external electrodes, a method can be used in which the second conductive resin layers 132b, 142b, 132b', and 142b' are formed by dipping, the second conductive resin layers 132b, 142b, 132b', and 142b' in the connection area are wiped off or removed, and then the first conductive resin layers 132a, 142a, 132a', and 142a' are formed by dipping.

[0102] (Experimental Example 1) Figure 8 is a graph showing the results of measuring the equivalent series resistance (ESR) in the multilayer electronic components according to the comparative example and the example.

[0103] The comparative example in Figure 8 represents the case where the area fraction of the intermetallic compound 31 is smallest. Example 1 corresponds to an example where the area fraction of the intermetallic compound 31 is higher than that of the comparative example, and Example 2 corresponds to an example where the area fraction of the intermetallic compound 31 is higher than that of Example 1.

[0104] Referring to Figure 8, it can be seen that the equivalent series resistance (ESR) of the multilayer electronic component decreases as the area fraction of the intermetallic compound 31 increases.

[0105] (Experimental Example 2) Table 1 shows the capacitance values ​​corresponding to the bending strength measurement distance for a sample of a multilayer electronic component in which an IMC-resin layer is formed entirely on the electrode layer, and Table 2 shows the capacitance values ​​corresponding to the bending strength measurement distance for a sample of a multilayer electronic component in which an IMC-resin layer is formed at the connection part and a Cu resin layer is formed at the band part.

[0106] The bending strength was evaluated according to the AEC-Q200 measurement conditions, by measuring the capacity corresponding to the measurement distance (deformation), and a constant load (1 mm / min) was applied to the center via a three-point bending tester at 25°C.

[0107] In Tables 1 and 2, a decrease in capacitance value of 1 / 10 of the initial insulation resistance value was evaluated as NG (Not Good).

[0108] The samples in Tables 1 and 2 were prepared by mixing Cu, glass, and a binder, then dispersing the mixture in a 3-roll mill to produce a Cu paste, which was then fired at 650-850°C to obtain a primary electrode fired chip.

[0109] Subsequently, each sample in Table 1 was prepared by mixing Cu powder, Sn powder, and epoxy resin and dispersing them using a 3-roll mill to produce a low-melting-point paste. This paste was then formed on electrode layers 131 and 141 by dipping, and the temperature was raised to 280°C at a heating rate of 4.6°C / min and maintained therefor to cure, after which a Ni plating layer and a Sn plating layer were formed.

[0110] Each sample in Table 2 was prepared by mixing Cu powder, Sn powder, and epoxy resin, dispersing them using a 3-roll mill to produce a low-melting-point paste, applying this paste to the head surface of the same primary electrode firing chip using a wheel type, and curing it by raising the temperature to 280°C at a heating rate of 4.6°C / min and maintaining the temperature. Subsequently, Cu powder and epoxy resin were mixed and dispersed using a 3-roll mill to produce a paste, which was then applied to the head surface and top surface of the main body 110 by a dipping method. After removing the Cu-epoxy paste formed on the head surface, the temperature was raised to 280°C at a heating rate of 4.6°C / min and maintained the temperature and curing it.

[0111] On the other hand, Sn powder is Sn, Sn 96.5 Ag 3.0 Cu 0.5 Sn 42 Bi 58 and Sn 72 Bi 28 It may contain one or more selected types, and the average particle size of the Cu powder and Sn powder may be 0.3 μm to 10 μm, but powders with the same particle size were used for all samples in Tables 1 and 2.

[0112] [Table 1]

[0113] [Table 2]

[0114] Referring to Table 1, when the IMC resin layer was formed entirely on the band and connection parts, it was confirmed that 3 out of 10 samples failed the bending strength test at 4 mm, and all samples failed the test at 7 mm deformation.

[0115] Referring to Table 2, when a Cu-resin layer is formed in the band portion and an IMC-resin layer is formed in the connection portion, no samples showed a failure (NG) at 4 mm, and it can be confirmed that the deformation amount at which the first volumetric value NG occurred corresponds to 6 mm. Furthermore, it can be confirmed that samples 2 and 5 did not show a volumetric value NG even at a deformation of 10 mm.

[0116] In other words, as in one embodiment of the present invention, when a Cu-resin layer is formed on the band portion of the external electrode and an IMC-resin layer is formed on the connection portion of the external electrode, it can be confirmed that the decrease in bending strength can be suppressed.

[0117] Although embodiments of the present invention have been described in detail above, the present invention is not limited by the embodiments described above and the accompanying drawings, but is limited by the claims provided herein. Therefore, within the scope of the technical idea of ​​the present invention as described in the claims, various forms of substitution, modification, and alteration are possible by persons with ordinary skill in the art, and these also fall within the scope of the present invention.

[0118] Furthermore, the expression “one embodiment” as used in this disclosure does not mean that each embodiment is the same as another, but is provided to highlight and illustrate the unique and distinct features of each embodiment. However, the embodiments presented above do not preclude their realization in combination with the features of other embodiments. For example, even if a matter described in one embodiment is not described in another embodiment, it can be understood as a description related to the other embodiment unless there is a contradictory or contrary description of that matter in the other embodiment.

[0119] The terms used in this disclosure are used solely to illustrate one embodiment and are not intended to limit the disclosure. Where otherwise clearly indicated by context, singular expressions include plural expressions. [Explanation of symbols]

[0120] 100, 100': Multilayer electronic components 110: Main unit 111: Dielectric layer 112, 113: Cover section 114, 115: Margin section 121, 122: Internal electrode 130, 130', 140, 140': External electrode 131, 141: Electrode layer 131', 141': Intermediate layer 132, 132', 142, 142': Conductive resin layer 132a, 132a', 142a, 142a': first conductive resin layer 132b, 132b', 142b, 142b': Second conductive resin layer 133, 143, 134, 144: Plating layer 11: First conductive metal 12: Glass 21:Second conductive metal 22: First resin 31:Third conductive metal 32: Second resin

Claims

1. A body including a dielectric layer and internal electrodes arranged alternately with the dielectric layer in a first direction, and including a first and second surface facing the first direction, a third and fourth surface connected to the first and second surfaces and facing the second direction, and a fifth and sixth surface connected to the first, second, third and fourth surfaces and facing the third direction, The electrode includes an electrode layer containing a conductive metal, which is disposed on the third and fourth surfaces, and an external electrode containing a conductive resin layer, which is disposed on the electrode layer. In the external electrode, when the region located on the third or fourth surface is defined as the connecting portion and the region located on the first or second surface is defined as the band portion, The conductive resin layer comprises a first conductive resin layer disposed in the band portion and containing Cu and a first resin, and a second conductive resin layer disposed in the connecting portion and containing an intermetallic compound and a second resin, in a laminated electronic component.

2. The multilayer electronic component according to claim 1, wherein the intermetallic compound comprises one or more of Ni-Sn intermetallic compounds, Ag-Sn intermetallic compounds, and Cu-Sn intermetallic compounds.

3. The laminated electronic component according to claim 1, wherein the area fraction of the intermetallic compound in the second conductive resin layer is greater than the area fraction of Cu in the first conductive resin layer.

4. The laminated electronic component according to claim 1, wherein the area fraction of the intermetallic compound in the second conductive resin layer is 0.50 or more and 0.95 or less.

5. The laminated electronic component according to claim 1, wherein the area ratio of Cu in the first conductive resin layer is 0.50 or more and 0.95 or less.

6. The laminated electronic component according to claim 1, wherein the ends of the first conductive resin layer and the second conductive resin layer are in contact with each other.

7. In the external electrode, when the region connecting the connection portion and the band portion is defined as the corner portion, The laminated electronic component according to claim 1, wherein the first conductive resin layer is arranged extending from the band portion to the corner portion.

8. The laminated electronic component according to claim 1, wherein, when the maximum size of the main body in the first direction is T, the second conductive resin layer is arranged on a region of 0.3T or more above and below the central part of the main body in the first direction, with respect to the central part of the main body in the first direction.

9. The stacked electronic component according to any one of claims 1 to 8, wherein the external electrode includes a plating layer disposed on the conductive resin layer.

10. The laminated electronic component according to claim 9, wherein the plating layer covers the end of the conductive resin layer.

11. The electrode layer further comprises glass, according to any one of claims 1 to 8.

12. The laminated electronic component according to any one of claims 1 to 8, wherein the external electrode further comprises an intermediate layer disposed between the second conductive resin layer and the electrode layer.

13. The laminated electronic component according to claim 12, wherein the intermediate layer comprises one or more of the following: a Ni-Sn intermetallic compound, an Ag-Sn intermetallic compound, and a Cu-Sn intermetallic compound.

14. The laminated electronic component according to any one of claims 1 to 8, wherein the first resin and the second resin include thermosetting resins.

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