Melt gap measurement method
By correcting the irregularly shaped reflected image of the scale rod to a regular ellipse and calculating the melt gap accurately, the method addresses measurement errors, enhancing crystal quality and thermal management in single crystal silicon growth.
JP2026120087APending Publication Date: 2026-07-21SK SILTRON CO LTD
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Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- SK SILTRON CO LTD
- Filing Date
- 2025-12-19
- Publication Date
- 2026-07-21
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Figure 2026120087000001_ABST
Abstract
This invention provides a melt gap measurement method that can improve the accuracy of melt gap measurement even when the reflected image of the scale rod is deformed into an irregular ellipse. [Solution] A melt gap measurement method for single crystal growth includes: a first step of acquiring an image that includes a scale rod and a reflected image of the scale rod in the silicon melt during the growth of a single crystal ingot; a second step of correcting the shape of the reflected image acquired in the first step to a regular ellipse if the shape is an irregular ellipse; and a third step of calculating the melt gap as the distance between the corrected reflected image and the scale rod.
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