Composition for semiconductor photoresist, and method for forming patterns using the same

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The semiconductor photoresist composition with an organometallic compound and alcohols addresses the limitations of chemically amplified photoresists, enhancing sensitivity and pattern uniformity for EUV lithography.

JP2026121308APending Publication Date: 2026-07-23SAMSUNG SDI CO LTD

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Patent Information

Authority / Receiving Office: JP · JP
Patent Type: Applications
Current Assignee / Owner: SAMSUNG SDI CO LTD
Filing Date: 2026-01-09
Publication Date: 2026-07-23

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Abstract

One embodiment of the present invention provides a semiconductor photoresist composition with excellent sensitivity and improved pattern roughness and depth of focus. Another embodiment of the present invention provides a pattern formation method using the semiconductor photoresist composition. [Solution] The present invention relates to a semiconductor photoresist composition comprising an organometallic compound, a monohydric alcohol, a polyhydric alcohol, and a solvent, wherein the monohydric alcohol and polyhydric alcohol are present in an amount of 0.001% to 20% by weight based on the total weight of the composition, and a pattern formation method using the same.

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