Joining device and method for manufacturing articles

Abstract

In a joining device for joining a second member to each of multiple regions on the joining surface of a first member, the present invention provides a technology that is advantageous in reducing the adhesion of foreign matter to the joining surface of the first member. [Solution] A joining device for joining a second member to each of a plurality of regions on the joining surface of a first member comprises a first holding part that holds the first member with the joining surface facing downward, and a second holding part that holds the second member. In a supply process in which the second member is supplied to the second holding part, the second holding part is positioned outside the space below the first member held by the first holding part. In a joining process in which the second member supplied to the second holding part is joined to any of the plurality of regions, the second holding part is positioned inside the space.

Description

Technical Field

[0001] The present invention relates to a bonding device and an article manufacturing method.

Background Art

[0002] Patent Document 1 discloses a bonding device that bonds a die to each of a plurality of bonding target locations on a wafer held by a wafer stage.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In a bonding device that bonds a die (second member) to each of a plurality of regions on the bonding surface of a wafer (first member), if foreign matter adheres (accumulates) to the bonding surface of the wafer, the wafer and the die may be bonded via the foreign matter. In this case, the bonding strength and / or bonding accuracy between the wafer and the die may become insufficient.

[0005] Therefore, an object of the present invention is to provide an advantageous technique for reducing the adhesion of foreign matter to the bonding surface of the first member in a bonding device that bonds a second member to each of a plurality of regions on the bonding surface of the first member.

Means for Solving the Problems

[0006] To achieve the above objective, a joining device as one aspect of the present invention is a joining device for joining a second member to each of a plurality of regions on the joining surface of a first member, comprising: a first holding part that holds the first member with the joining surface facing downward; and a second holding part that holds the second member, wherein in a supply process in which the second member is supplied to the second holding part, the second holding part is positioned outside the space below the first member held by the first holding part; and in a joining process in which the second member supplied to the second holding part is joined to any of the plurality of regions, the second holding part is positioned inside the space.

[0007] Further objects or other aspects of the present invention will be revealed by preferred embodiments described below with reference to the accompanying drawings. [Effects of the Invention]

[0008] According to the present invention, for example, in a joining device that joins a second member to each of a plurality of regions on the joining surface of a first member, it is possible to provide a technology that is advantageous in that it reduces the adhesion of foreign matter to the joining surface of the first member. [Brief explanation of the drawing]

[0009] [Figure 1] A schematic diagram showing an example of the configuration of the joining device of the first embodiment. [Figure 2] Schematic diagram showing an example of stage configuration [Figure 3] Flowchart showing the operation flow of the bonding device of the first embodiment [Figure 4] A diagram illustrating the operation of the joining device of the first embodiment. [Figure 5] Schematic diagram showing an example of die configuration [Figure 6] Schematic diagram showing an example configuration of the joining device of the second embodiment. [Figure 7] A diagram showing an example of the arrangement of receiving members in a wafer chuck. [Figure 8] A diagram illustrating the drive of the receiving member in the joining device of the second embodiment. [Modes for carrying out the invention]

[0010] The embodiments will be described in detail below with reference to the attached drawings. Note that the following embodiments do not limit the invention as defined in the claims. While the embodiments describe multiple features, not all of these features are essential to the invention, and the features may be combined in any way. Furthermore, in the attached drawings, identical or similar configurations are given the same reference numerals, and redundant descriptions are omitted.

[0011] In this specification and the accompanying drawings, directions are indicated in an XYZ coordinate system where the direction parallel to the surface (joined surface) of the first member is the XY plane. The directions parallel to the X, Y, and Z axes in the XYZ coordinate system are defined as the X direction, Y direction, and Z direction, respectively, and the rotations around the X axis, Y axis, and Z axis are defined as θX, θY, and θZ, respectively. Control and driving (movement) related to the X, Y, and Z axes refer to control or driving (movement) related to the direction parallel to the X axis, the Y axis, and the Z axis, respectively. Furthermore, control or driving related to the θX axis, θY axis, and θZ axis refer to control or driving related to rotation around the axis parallel to the X axis, the Y axis, and the Z axis, respectively.

[0012] In the embodiments described later, an example is described in which a wafer (substrate) on which a semiconductor device is formed is used as the first component, and dies (chips) obtained by piecewise separating the wafer on which the semiconductor device is formed are used as the second component. The bonding surface of the wafer, which is the first component, is provided with multiple bonding regions to which the dies, which are the second component, are each bonded. Here, the first component and the second component are not limited to wafers and dies, and various modifications and changes are possible within the scope of the gist of the invention. For example, as the first component, in addition to wafers on which semiconductor devices are formed, examples include silicon wafers, silicon wafers with wiring formed on them, glass wafers, glass panels with wiring formed on them, organic panels (PCBs) with wiring formed on them, and metal panels. The first component may be a wafer on which one or more dies are already bonded. As the second component, in addition to dies obtained by piecewise separating the wafer on which the semiconductor device is formed, examples include stacks of several dies, small pieces of material, optical elements, MEMS, and structures.

[0013] In the embodiments described later, various temporary or permanent bonding methods can be applied as the joining method between the first member and the second member. For example, bonding methods include bonding with adhesive, temporary bonding with temporary adhesive, bonding by hybrid bonding, atomic diffusion bonding, vacuum bonding, and bump bonding.

[0014] Next, we will describe industrial application examples of the embodiments described later. One example of application is the manufacturing of stacked memory. When the bonding apparatus of the embodiment described later is applied to the manufacturing of stacked memory, a wafer (substrate) on which a semiconductor device, which is memory, is formed is used as the first component, and a die (chip) on which the memory is formed is used as the second component. For example, in the manufacturing of stacked memory having eight memory layers, a die (second component) formed as the eighth memory layer is bonded onto a wafer (first component) that already has seven memory layers. Note that the final layer of the stacked memory may not be a memory layer, but a layer on which a driver for driving the memory is formed.

[0015] A second application example is heterogeneous integration of processors. Conventional processors mainly consisted of SoCs (System on Chip), in which logic circuits and SRAM (Random Access Memory) were configured within a single semiconductor element. In contrast, heterogeneous integration involves creating multiple types of elements on separate wafers using the most suitable process for each element, and then joining them to manufacture a processor. This enables cost reduction and yield improvement for processors. When applying the joining apparatus of the embodiment described later to heterogeneous integration, a wafer (substrate) on which the semiconductor device, which is a logic device, is formed is used as the first component. Then, dies (chips) such as SRAM, antennas, and drivers, which have been separated after probing, are used as the second component. In heterogeneous integration, for example, different types of dies (second components) are joined sequentially, so the number of objects joined to the wafer (first component) increases sequentially. Specifically, when joining a die containing SRAM onto a logic wafer, the logic wafer becomes the first component, and the die containing SRAM becomes the second component. Furthermore, when bonding a die containing an element to be formed on top of an SRAM to a die containing an SRAM, the die containing the logic wafer and SRAM becomes the first component, and the die containing the element becomes the second component. When bonding multiple dies in stacks, it is desirable to bond them starting with the thinnest dies to prevent the bonding head from interfering with already bonded dies.

[0016] A third application example is 2.5D bonding using a silicon interposer. A silicon interposer is a silicon wafer on which wiring is formed. 2.5D bonding is a method of bonding multiple types of dies onto a silicon interposer and electrically connecting the multiple types of dies using the wiring of the silicon interposer. When applying the bonding apparatus of the embodiment described later to 2.5D bonding, the silicon wafer on which the wiring is formed is used as the first component, and the individual dies are used as the second component. In 2.5D bonding, for example, since multiple types of dies are bonded onto the silicon interposer, the structure of the silicon interposer on which one or more dies have already been bonded may be treated as the first component. When bonding multiple types of dies onto a silicon interposer, it is desirable to bond the thinner dies first so that the bonding head does not interfere with the already bonded dies.

[0017] As a fourth application example, there is 2.1D bonding using an organic interposer or a glass interposer. An organic interposer is one in which wirings are formed on an organic panel (PCB substrate, CCL substrate) used as a package substrate. A glass interposer is one in which wirings are formed on a glass panel. 2.1D bonding is to bond a plurality of types of dies on an organic interposer or a glass interposer and make electrical connections between the plurality of types of dies by the wirings of the interposer. When applying the bonding apparatus of the embodiments described later to 2.1D bonding, in 2.1D bonding using an organic interposer, the organic panel on which wirings are formed is used as the first member, and the singulated dies are used as the second member. On the other hand, in 2.1D bonding using a glass interposer, the glass panel on which wirings are formed is used as the first member, and the singulated dies are used as the second member. In 2.1D bonding, for example, since a plurality of types of dies are bonded to an organic interposer or a glass interposer, the structure of the organic interposer or the glass interposer to which one or more dies have been bonded may be treated as the first member. When bonding a plurality of types of dies to an interposer, as the bonding order, it is desirable to bond starting from a thin die so that the bonding head does not interfere with the already bonded dies.

[0018] A fifth application example is temporary bonding in the fan-out package manufacturing process. For example, fan-out packages as advanced packages applied to semiconductor manufacturing processes include fan-out wafer-level packages and fan-out panel-level packages. A fan-out wafer-level package is one in which individual dies are reassembled into a wafer shape using molding resin and then packaged. A fan-out panel-level package is one in which individual dies are reassembled into a panel shape using molding resin and then packaged. In such fan-out packages, when packaging, rewiring from dies to bumps, or rewiring to bond different types of dies, is formed on the molded reassembled substrate. At this time, if the die alignment accuracy is low, it may be difficult to accurately align the rewiring pattern to the die when transferring the rewiring pattern using a step-and-repeat exposure apparatus. Therefore, in fan-out packages, it is required to align multiple dies with high accuracy. When the bonding apparatus of the embodiment described later is applied to the fan-out package manufacturing process, a metal panel is used as the first component, and individual dies are used as the second component. Specifically, using a bonding device, multiple individual dies are sequentially temporarily bonded to a metal panel with a temporary bonding agent. Subsequently, the multiple dies temporarily bonded to the metal panel are molded into a wafer shape or panel shape by a molding device, and the molded dies are peeled off from the metal panel. This produces a reconstructed wafer or reconstructed panel in which multiple dies are arranged. In the fan-out package manufacturing process, the arrangement of the multiple dies may change during the molding process. Therefore, when temporarily bonding multiple dies to a metal panel using a bonding device, it is desirable to adjust the bonding position of each die on the metal panel so as to compensate for the changes in arrangement that occur during the molding process.

[0019] As a sixth application example, heterogeneous substrate bonding can be cited. For example, in an infrared image sensor, InGaAs, which is known as a high-sensitivity material, is used for a sensor unit that receives light, and silicon capable of high-speed processing is used for a logic circuit that extracts data. As a result, a high-sensitivity and high-speed infrared image sensor can be manufactured. However, InGaAs crystals have only been mass-produced in small diameters such as 4 inches, and are smaller than 300 mm, which is the mainstream for silicon wafers. Therefore, a method has been proposed in which a die obtained by singulating an InGaAs substrate is bonded onto a 300 mm silicon wafer on which a logic circuit has been formed. Thus, the bonding apparatus of the embodiments described below can also be applied to heterogeneous substrate bonding in which members made of different materials and having different substrate sizes are bonded together. When applying the bonding apparatus to heterogeneous substrate bonding, a large-diameter substrate such as a silicon wafer is used as the first member, and a die (small piece) made of a material such as InGaAs is used as the second member. Note that the die (small piece) made of a material such as InGaAs may be a sliced crystal, but it is desirable to cut it out in a square shape.

[0020] <First Embodiment> The first embodiment according to the present invention will be described. FIG. 1 is a schematic diagram showing a configuration example of a bonding apparatus 100A according to the first embodiment. In FIG. 1, the direction perpendicular to the bonding surface 6a (lower surface) of the wafer 6 held by the wafer chuck 423 is defined as the Z direction, and the directions orthogonal to each other in the plane parallel to the bonding surface 6a of the wafer 6 are defined as the X direction and the Y direction. The bonding apparatus 100A is an apparatus that sequentially bonds die 51, which is a second member singulated, to each of a plurality of bonding regions on the bonding surface 6a of the wafer 6 (substrate), which is a first member. The plurality of die 51 are arranged on a sheet 5a pasted on a dicing frame 5.

[0021] As shown in Figure 1, the bonding apparatus 100A of this embodiment includes a pickup unit 3, a bonding unit 4, and a control unit CNT. The pickup unit 3 and the bonding unit 4 are mounted on a base 1 which is vibration-damped by a mount 2. In this embodiment, the pickup unit 3 and the bonding unit 4 are mounted on the same base 1, but they may be mounted individually on separate bases.

[0022] The pickup unit 3 includes a pickup head 31, a release head 32, and a frame holding unit 33, and picks up dies 51 one by one from the sheet 5a (e.g., dicing tape) attached to the dicing frame 5. The frame holding unit 33 holds the dicing frame 5. The release head 32 pushes up the die 51 to be picked up from the back side of the sheet 5a attached to the dicing frame 5 so that the die 51 to be picked up protrudes above the other dies. At this time, the die 51 to be picked up is partially peeled off from the dicing tape.

[0023] The pickup head 31 (supply head) picks up one die 51 from the sheet 5a on which multiple dies 51 are arranged and supplies it to the bonding head 432, which will be described later. Specifically, the pickup head 31 holds (suctions) the target die 51 that has been pushed up by the release head 32 using vacuum suction or the like, and picks up (separates) the target die 51 from the sheet 5a. The pickup head 31 is then driven by the drive mechanism 34 to move from the pickup section 3 to the bonding section 4, and supplies (transfers) the die 51 to the bonding head 432 in the bonding section 4.

[0024] In this embodiment, the bonding surface 51a of each die 51 on the sheet 5a attached to the dicing frame 5 faces upward, and the pickup head 31 comes into contact with the bonding surface 51a of the die 51. Therefore, when applying a bonding method that activates the surface, such as hybrid bonding, it is preferable that the bonding surface 51a of each die 51 is coated with a highly stable coating such as a diamond-like carbon (DLC) coating or a fluorine coating.

[0025] The bonding section 4 includes a lower base 41 and an upper base 42, with a stage 43 provided on the lower base 41. The stage 43 is equipped with a bonding head 432 and a wafer observation camera 431. The stage 43 is configured to be movable on the lower base 41 in the XY and θZ directions and is driven by a drive mechanism 43a including an actuator such as a linear motor. The drive mechanism 43a may also have the function of driving the bonding head 432 in the Z and θZ directions.

[0026] The bonding head 432 (second holding unit) holds the die 51 supplied from the pickup head 31 by vacuum suction or the like. In the bonding process in which the die 51 is bonded to the bonding surface 6a of the wafer 6 held by the wafer chuck 423 (described later), the bonding head 432 is driven in the Z direction by the drive mechanism 43a.

[0027] The wafer observation camera 431 (first camera) is positioned to the side of the bonding head 432 in the +Y direction (first direction) and photographs the bonding surface 6a of the wafer 6 held by the wafer chuck 423 described later. The wafer observation camera 431 is used to acquire (measure) the position and / or surface state of the pattern in the target area on the bonding surface 6a of the wafer 6 to which the die 51 on the bonding head 432 is to be bonded, among a plurality of bonding regions. For example, the control unit CNT uses known image processing techniques to detect the position of feature points of the pattern in the target area from the image obtained by the wafer observation camera 431 photographing the target area on the bonding surface 6a of the wafer 6. This allows the control unit CNT to measure the position in the XY direction and / or θZ direction for the target area of ​​the wafer 6. The wafer observation camera 431 may also be a camera capable of photographing patterns and marks formed on the back surface of the wafer 6 (the surface opposite to the bonding surface 6a) and / or inside the wafer 6 by using infrared light.

[0028] Furthermore, the stage 43 is provided with a mirror 433 for measuring the position of the stage 43. The mirror 433 is the target of the interferometer 422, which measures the position of the stage 43. The interferometer 422 is fixed to the upper base 42 and irradiates light onto the mirror 433 on the stage 43, measuring the position of the stage 43 based on the reflected light from the mirror 432. The control unit CNT can control the position of the stage 43 (bonding head 432, wafer observation camera 431) in the XY and θZ directions based on the position of the stage 43 measured by the interferometer 422.

[0029] Next, the mechanism mounted on the upper base 42 (fixing member) will be described. The upper base 42 is provided with a wafer chuck 423 and a die observation camera 421. In this embodiment, the wafer chuck 423 and the die observation camera 421 are fixed to the lower surface of the upper base 42.

[0030] The wafer chuck 423 (first holding part) holds the wafer 6 with the bonding surface 6a facing downward (i.e., facing in the -Z direction) by vacuum suction or the like. In the bonding apparatus 100A of this embodiment, by holding the wafer 6 with the bonding surface 6a facing downward, the likelihood of bonding defects caused by foreign matter adhering (accumulating) on ​​the bonding surface 6a of the wafer 6 can be reduced. In addition, although the wafer chuck 423 of this embodiment is fixed to the upper base 42, it may be configured to be movable in the Z direction and / or θZ direction.

[0031] In this embodiment, the bonding process is performed by driving the bonding head 432 in the Z direction, but it may also be performed by driving the bonding head 432 and the wafer chuck 423 relative to each other in the Z direction. Similarly, in this embodiment, the alignment of the wafer 6 and the die 51 is performed by driving the bonding head 432 in the XY and θZ directions, but it may also be performed by driving the bonding head 432 and the wafer chuck 423 relative to each other in the XY and θZ directions.

[0032] The die observation camera 421 (second camera) is positioned to the side of the wafer chuck 423 in the -Y direction (second direction opposite to the first direction) and photographs the bonding surface of the die 51 held by the bonding head 432. The die observation camera 421 is used to acquire (measure) the position and / or surface state of the pattern on the bonding surface 51a of the die 51. For example, the control unit CNT uses known image processing techniques to detect the position of feature points of the pattern on the bonding surface 51a of the die 51 from the image obtained by the die observation camera 421. This allows the control unit CNT to measure the position of the pattern on the bonding surface 51a of the die 51 in the XY direction and / or θZ direction.

[0033] The control unit CNT is composed of a computer (information processing device) having a processor such as a CPU (Central Processing unit) and a storage unit such as memory, and controls each part of the bonding apparatus 100A. In this embodiment, the control unit CNT controls, for example, the supply process and the bonding process. The supply process is the process of picking up one die 51 from the sheet 5a on which multiple dies 51 are arranged using the pickup head 31 and supplying it to the bonding head 432. The bonding process is the process of bonding the die 51 to one of multiple bonding regions (target region) on the bonding surface 6a of the wafer 6 by driving the bonding head 432 and the wafer chuck 423 relative to each other in the Z direction.

[0034] Furthermore, the control unit CNT may perform a positioning process (alignment process) between the supply process and the bonding process by driving the bonding head 432 and the wafer chuck 423 relative to each other in the XY direction to align the wafer 6 (target area) and the die 51. Specifically, the control unit CNT moves the stage 43 so that the die 51 on the bonding head 432 is positioned within the field of view of the die observation camera 421, and determines the position of the pattern provided on the bonding surface of the die 51 based on the image obtained from the die observation camera 421. Then, the control unit CNT moves the stage 43 so that the target area of ​​the wafer 6 is positioned within the field of view of the wafer observation camera 431, and determines the position of the pattern provided on the target area of ​​the wafer 6 based on the image obtained from the wafer observation camera 431. Based on this position information, the control unit CNT can perform positioning between the die 51 and the target area of ​​the wafer 6.

[0035] In this embodiment, the bonding apparatus 100A is fixed to the upper base 42. Therefore, relative driving between the bonding head 432 and the wafer chuck 423 can be performed by driving the stage 43 (or bonding head 432) with the drive mechanism 43a. In this embodiment, an example of the configuration of the bonding apparatus 100A provided with one pickup unit 3, one pickup head 31, one release head 32, and one bonding head 432 has been described. However, the bonding apparatus 100A may be provided with multiple pickup units 3, multiple pickup heads 31, multiple release heads 32, and multiple bonding heads 432.

[0036] Next, a specific configuration example of stage 43 will be described. Figure 2 is a view of stage 43 from the +Z direction. The side of stage 43 is equipped with a bar mirror 433a for measuring the position in the X direction and the θZ direction (rotation direction), and a bar mirror 433b for measuring the position in the Y direction. Bar mirror 433a is the target for interferometers 422a and 422c, which measure the position in the X direction. Interferometers 422a and 422c are spaced apart from each other in the Y direction, and the amount of rotation of stage 43 (θZ direction) can be determined by the difference between the measurement result of interferometer 422a and the measurement result of interferometer 422c. Bar mirror 433b is the target for interferometer 422b, which measures the position in the Y direction. Interferometers 422a to 422c measure the position of stage 43 in the X direction, the position in the Y direction, and the amount of rotation in the θZ direction in real time. As a result, the control unit CNT can provide real-time feedback control of the drive of the stage 43, enabling high-precision two-dimensional positioning of the stage 43. In the bonding apparatus 100A of this embodiment, high-precision position measurement by interferometers 422a to 422c and feedback control of the drive mechanism of the stage 43 based on the results can function as the positioning mechanism of the stage 43.

[0037] Furthermore, on the upper surface of the stage 43, in addition to the bonding head 432 that holds the die 51 and the wafer observation camera 431, a reference plate 434 is provided. The reference plate 434 is made of a material with a low coefficient of thermal expansion and has a plurality of marks 434a to 434c formed (drawn) with high positional accuracy. For example, the reference plate 434 may be made of a quartz substrate on which marks have been drawn using a semiconductor lithography drawing method. Each of the marks 434a to 434c on the reference plate 434 can be photographed (observed) by the die observation camera 421, unless a separate camera for observing the reference plate is configured. Here, the stage 43 may be composed of a coarse-movement stage that can drive a large range and a fine-movement stage that can drive a small range with high precision on the coarse-movement stage. In this case, the wafer observation camera 431, bonding head 432, mirrors 433a to 433b, and reference plate 434 may be provided on the fine-movement stage.

[0038] A method for ensuring the origin position, magnification, X-axis and Y-axis directions (rotation), and orthogonality of the wafer stage 43 using a reference plate 434 will be described. The control unit CNT observes mark 434a with the die observation camera 421 and acquires the measurement values ​​of interferometers 422a to 422c when mark 434a is positioned at the center of the image obtained by the die observation camera 421, and sets these measurement values ​​as the origin of the stage 43. Next, the control unit CNT observes mark 434b with the die observation camera 421 and acquires the measurement values ​​of interferometers 422a to 422c when mark 434b is positioned at the center of the image obtained by the die observation camera 421. Then, based on these measurement values, the Y-axis direction and Y-magnification of the stage 43 are determined. Next, the control unit CNT observes the mark 434c with the die observation camera 421 and acquires the measurement values ​​of the interferometers 422a to 422c when the mark 434c is positioned at the center of the image obtained by the die observation camera 421. Based on these measurement values, it then determines the X-axis direction and X-magnification of the stage 43.

[0039] This allows for calibration of the axis direction and orthogonality, with the direction from mark 434b to mark 434a on the reference plate 434 being the Y-axis of the bonding device 100A, and the direction from mark 434c to mark 434a being the X-axis of the bonding device 100A. Furthermore, calibration is performed using the distance between mark 434b and mark 434a as the scale reference in the Y-direction of the bonding device 100A, and the distance between mark 434c and mark 434a as the scale reference in the X-direction of the bonding device 100AA. Since the refractive index of the interferometer optical path of the interferometers 422a to 422c changes due to atmospheric pressure fluctuations and temperature fluctuations, causing the measured values ​​to fluctuate, it is desirable to perform calibration at arbitrary timings to guarantee the origin position, magnification, rotation, and orthogonality of the stage 43. In addition, to reduce fluctuations in the measured values ​​of the interferometers 422a to 422c, the space in which the stage 43 moves may be enclosed in a temperature-controlled chamber for temperature control.

[0040] In this embodiment, an example has been described in which the reference plate 434 is placed on the stage 43 and observed with the die observation camera 421, but the embodiment is not limited to this. For example, the reference plate 434 may be placed on the upper base 42 and observed with the wafer observation camera 431. In this configuration as well, the origin position, magnification, rotation, and orthogonality of the stage 43 can be guaranteed. Furthermore, in this embodiment, an example has been described in which calibration is performed by observing the reference plate 434, but the embodiment is not limited to this. For example, calibration may be performed by abutting against a reference surface. Alternatively, high-precision positioning of the stage 43 may be performed by using a position measuring means that guarantees absolute values, such as a white light interferometer.

[0041] Next, the operation of the bonding device 100A of this embodiment will be described with reference to Figures 3 and 4. Figure 3 is a flowchart of the operation flow of the bonding device 100A of this embodiment. Each step in the flowchart of Figure 3 can be executed by the control unit CNT. Figure 4 is a diagram illustrating the operation of the bonding device 100A of this embodiment, and only the bonding section 4 is shown.

[0042] In step S101, the control unit CNT uses a wafer transport mechanism (not shown) to load the first component, wafer 6, into the wafer chuck 423 of the bonding apparatus 100A. As described above, the wafer chuck 423 of this embodiment holds the wafer 6 with the bonding surface 6a facing downwards in order to reduce the adhesion (accumulation) of foreign matter to the bonding surface 6a of the wafer 6. Therefore, the wafer transport mechanism inverts the orientation of the wafer 6 taken out of a storage container such as a FOUP (Front Opening Unify Pod) and transports the wafer 6 to the wafer chuck 423 with the bonding surface 6a facing downwards. In this case, the operation of inverting the orientation of the wafer 6 so that the bonding surface 6a of the wafer 6 faces downwards should be performed immediately after the wafer 6 is taken out of the storage container. This reduces the adhesion of foreign matter to the bonding surface 6a of the wafer 6 during transport of the wafer 6 from the storage container to the wafer chuck 423.

[0043] Here, it is desirable that the interior of the bonding apparatus 100A be a highly clean space of about Class 1. Similarly, it is desirable that the storage container be highly airtight and maintain a high level of cleanliness in order to keep the wafer 6 clean. Furthermore, the wafer 6 may be roughly positioned based on the θZ and XY directions measured by a pre-alignment unit (not shown) before being transported to the wafer chuck 423. The θZ direction position of the wafer 6 can be measured by detecting the notch or orientation flat of the wafer 6, and the XY direction position of the wafer 6 can be measured by detecting the outer shape of the wafer 6.

[0044] In the bonding apparatus 100A of this embodiment, a cleaning mechanism for cleaning the wafer 6 may be provided inside the bonding apparatus 100A in order to improve the cleanliness of the wafer 6. Furthermore, a mechanism for performing pre-treatment on the wafer 6 for bonding may also be provided inside the bonding apparatus 100A. Examples of pre-treatment include, in the case of bonding with adhesive, applying adhesive to the bonding surface 6a of the wafer 6, and in the case of hybrid bonding, activating the bonding surface 6a of the wafer 6.

[0045] In step S102, the control unit CNT performs wafer alignment using the wafer observation camera 431. During wafer alignment, the bonding surface 6a of the wafer 6 is photographed by the wafer observation camera 431, and the position of the wafer 6 held by the wafer chuck 423 (for example, in the XY, Z, and θZ directions) is determined based on the image obtained.

[0046] Focus adjustment when imaging the bonding surface 6a of the wafer 6 may be performed by the focus adjustment mechanism of the wafer observation camera 431, or by driving the wafer 6 in the Z direction using the Z drive mechanism of the wafer chuck 423. If alignment marks are provided on the bonding surface 6a of the wafer 6, the position of the wafer 6 can be determined using these alignment marks. On the other hand, if alignment marks are not provided on the bonding surface 6a of the wafer 6, the position of the wafer 6 may be determined using a part of the pattern (feature points) provided on the bonding surface 6a.

[0047] For example, the control unit CNT can determine the position of the wafer 6 by measuring the image position of a part of the alignment mark or pattern (feature point) projected onto the center of the image acquired by the wafer observation camera 431. In the following, the alignment mark or part of the pattern (feature point) may be referred to as "alignment mark, etc." As an example, a method can be given in which the position of the alignment mark, etc. is measured relative to the reference point of the bonding apparatus 100A. In this method, the stage 43 is driven in advance so that the marks formed on the reference plate 434 are within the field of view of the die observation camera 421, and the marks on the reference plate 434 are imaged by the die observation camera 421. Based on the position of the stage 43 at that time and the position of the marks in the image obtained by the die observation camera 421, the reference point of the bonding apparatus 100A is determined. Then, based on the image obtained by imaging the alignment mark, etc. with the wafer observation camera 431, the offset amount of the alignment mark, etc. relative to the reference point is determined. Based on the position of the reference point and the offset amount obtained in this way, the position of the wafer 6 relative to the reference point can be measured with high precision. The reference point for the joining device 100A is the position of the mark on the reference plate 434, but any other location that serves as a reference point may be used.

[0048] Here, if the amount of rotation of the wafer 6 held by the wafer chuck 423 in the θZ direction is large, it is desirable to resupply the wafer 6 to the wafer chuck 423 so that the amount of rotation of the wafer 6 in the θZ direction is reduced (corrected). If the wafer 6 is resupplied to the wafer chuck 423, it is necessary to measure the position of the wafer 6 again. Alternatively, during the execution of step S102, the surface position (height) of the bonding surface 6a of the wafer 6 may be measured using a height measuring means (not shown) that measures the surface position (height) of the bonding surface 6a of the wafer 6. This is because there is variation in the thickness of the wafer 6, and the surface position of the bonding surface 6a of the wafer 6 is important in order to manage (control) the gap between the wafer 6 and the die 51 with high precision during the bonding process.

[0049] Stage 43 is guaranteed to have its origin position, magnification, position in the XY direction, rotation in the θZ direction, and orthogonality using a reference plate 434. Therefore, the position of the wafer 6 held by the wafer chuck 423 can be measured with reference to the origin position of Stage 43, etc. On the bonding surface 6a of the wafer 6, there are multiple regions, each having a semiconductor device to which the die 51 is to be electrically connected, which are repeatedly arranged within the wafer 6 as multiple bonding regions to which the die 51 is to be bonded, at a constant period. Since the semiconductor devices in each bonding region are manufactured with high precision positioning using semiconductor manufacturing equipment, the multiple bonding regions on the bonding surface 6a of the wafer 6 are generally precisely arranged with a repeating period of nanometer-level precision. Therefore, in the wafer alignment of step S102, it is not necessary to measure the position of all regions on the bonding surface 6a of the wafer 6, but it is sufficient to measure the position of some of the multiple bonding regions on the bonding surface 6a of the wafer 6. Specifically, the positions of semiconductor devices (patterns, marks) in three or more bonding regions out of multiple bonding regions on the bonding surface 6a of the wafer 6 are measured and statistically processed. This allows for the calculation of the arrangement of bonding regions on the bonding surface 6a of the wafer 6, the origin position of the arrangement, the position in the XY direction, the amount of rotation and orthogonality in the θZ direction, and the repetition period multiplier error.

[0050] Furthermore, the wafer chuck 423 may be equipped with a mechanism for temperature control of the wafer 6. For example, the thermal expansion coefficient of a silicon wafer is 3 ppm / °C, and in the case of a 300 mm diameter wafer, a 1°C increase in temperature will cause the outermost edge to shift by 150 mm × 0.000003 = 0.00045 mm = 450 nm. If the bonding position (for example, the position of the target area) shifts after wafer alignment, it may become difficult to bond the wafer 6 and the die 51 with high precision. Therefore, it is preferable to temperature control the wafer 6 so that its temperature change is 0.1 degrees or less.

[0051] In this embodiment, wafer 6 was used as the first component. However, if an interposer with wiring formed on it is used as the first component, the arrangement of the repeatedly formed wiring will be measured, rather than the arrangement of semiconductor devices. Furthermore, if a wafer or panel without a pattern is used as the first component, the wafer alignment in step S102 may not be performed.

[0052] Steps S101 to S102 described above are processes relating to the first component, the wafer 6. Meanwhile, in parallel with steps S101 to S102, processes relating to the second component, the die 51 (steps S201 to S203), are carried out. Figure 5 is a schematic diagram showing an example of the configuration of the die 51. The die 51 has a bonding surface 51a and a back surface 51b which is the surface opposite to the bonding surface 51a. The bonding surface 51a of the die 51 is provided with an element pattern 501 and alignment marks 502. The element pattern 501 may be understood to include electrodes (bumps) that are electrically connected to electrodes provided on the wafer 6.

[0053] In step S201, the control unit CNT transports the dicing frame 5 to the pickup unit 3 (on the frame holding unit 33) using a transport mechanism (not shown). The dicing frame 5 is a frame with an opening in the center, and a sheet 5a (for example, dicing tape) is attached to the dicing frame 5 so as to cover the opening. Multiple dies 51, which have been cut into individual pieces by a cutting device such as a dicer, are arranged on the sheet 5a. Conventionally, the dicing frame 5 has been transported in an unsealed magazine. However, if foreign matter adheres to the bonding surface of the die 51, bonding failure may occur, so it is necessary to transport it in a container that is highly airtight and maintains a high degree of cleanliness. Here, in order to improve the cleanliness of the die 51, a cleaning mechanism for cleaning the die 51 on the dicing frame 5 (sheet 5a) may be provided inside the bonding device 100A. Furthermore, the dicing frame 5 can be roughly positioned in the θZ direction and shifted position (XY direction) based on the external shape of the dicing frame 5 by a pre-alignment unit (not shown) and then transported onto the frame holding unit 33.

[0054] In step S202, the control unit CNT picks up one die 51 from the dicing frame 5 (sheet 5a) by controlling the pickup head 31 and the release head 32. Specifically, the control unit CNT first moves the pickup head 31 and the release head 32 to the position of the die 51 to be picked up (hereinafter sometimes referred to as the target die 51). Then, the control unit CNT drives the release head 32 in the +Z direction to push the target die 51 up from the back side of the sheet 5a, and in that state, drives the pickup head 31 in the -Z direction to bring the pickup head 31 into contact with the target die 51. As a result, the target die 51 is held (suctioned) by the pickup head 31 by vacuum suction or the like, and the target die 51 can be separated from the sheet 5a by driving the pickup head 31 in the +Z direction. The target die 51 to be picked up may be determined based on known good die (KGD) information transmitted online to the bonding device 100A. Normally, only good dies are selected as target dies 51. However, among the multiple bonding regions on the bonding surface 6a of the wafer 6, a known bad die (KBD) may also be selected as the target die 51 to bond to a bonding region containing a defective device.

[0055] In step S203, the control unit CNT performs a supply process to supply the target die 51 picked up by the pickup head 31 to the bonding head 432 of the bonding unit 4. Specifically, the control unit CNT moves the pickup head 31 that has picked up the target die 51 in the X direction, thereby positioning the pickup head 31 above the bonding head 432. Then, the control unit CNT drives the pickup head 31 in the -Z direction to supply (transfer) the target die 51 from the pickup head 31 to the bonding head 432.

[0056] Here, the supply process is performed with the bonding head 432 positioned outside the space S below the wafer 6 held by the wafer chuck 423 (hereinafter sometimes referred to as the lower space S), as shown in Figure 4(a). That is, when performing the supply process, the stage 43 moves so that the bonding head 432 is positioned outside the lower space S. By performing the supply process with the bonding head 432 positioned outside the lower space S in this way, it is possible to reduce the amount of foreign matter generated when the die 51 is supplied from the pickup head 31 to the bonding head 432 that adheres to the bonding surface 6a of the wafer 6.

[0057] In this embodiment, when the target die 51 is picked up by the pickup head 31, the bonding surface 51a of the target die 51 is facing upward (facing in the +Z direction), and the bonding surface 51a of the target die 51 is held (in contact) by the pickup head 31. On the other hand, when the target die 51 is transferred from the pickup head 31 to the bonding head 432, the bonding surface 51a of the target die 51 is also facing upward, and the back surface of the target die 51 opposite to the bonding surface 51a is held by the bonding head 432. In other words, each of the pickup head 31 and the bonding head 432 in this embodiment is configured to hold the die 51 with the bonding surface 51a facing upward. Therefore, the pickup head 31 supplies the picked-up target die 51 to the bonding head 432 without flipping it over (inverting it upside down).

[0058] In this embodiment, an example has been described in which the pickup head 31 directly transports the target die 51 to the bonding head 432, but it is not limited to this. For example, if one or more transport mechanisms are provided in the transport path of the target die 51 to the bonding head 432, the target die 51 may be transported to the bonding head 432 after passing the target die 51 to the one or more transport mechanisms. In addition, a mechanism for performing pre-treatment on the target die 51 for bonding may be provided inside the bonding device 100A. Examples of pre-treatment include, in the case of bonding with adhesive, applying adhesive to the bonding surface 51a of the target die 51, and in the case of hybrid bonding, activating the bonding surface 51a of the target die 51. A cleaning treatment of the target die 51 may also be performed as pre-treatment. Pre-treatment may also be performed while the target die 51 is being transported to the bonding head 432.

[0059] Through the above steps, the wafer 6 is held by the wafer chuck 423 and the target die 51 is held by the bonding head 432. In other words, the wafer 6 is ready for bonding to the target die 51 to the target area of ​​the wafer 6.

[0060] In step S103, the control unit CNT performs dial alignment using the die observation camera 421. The die observation camera 421 is positioned to photograph the bonding surface 51a of the target die 51 on the bonding head 432 when the bonding head 432 is positioned outside the lower space S. During dial alignment, as shown in Figure 4(b), the stage 43 is moved so that the bonding surface 51a of the target die 51 on the bonding head 432 is within the field of view of the die observation camera 421. The bonding surface 51a of the target die 51 is then photographed by the die observation camera 421, and the position of the pattern provided on the bonding surface 51a of the target die 51 is determined based on the image obtained.

[0061] Focus adjustment when imaging the bonding surface of the target die 51 may be performed by a focus adjustment mechanism provided in the die observation camera 421, or by driving the bonding head 432 in the Z direction by the drive mechanism 43a of the stage 43. If a Z drive mechanism for driving the die observation camera 421 in the Z direction is provided, focus adjustment may be performed using that Z drive mechanism. In this embodiment, as shown in Figure 5(b), alignment marks 502 are provided on the bonding surface 51a of the target die 51, so the position of the pattern 501 of the target die 51 can be determined using the alignment marks 502. On the other hand, in general dies, alignment marks are often placed on scribe lines, and the alignment marks are often removed along with the scribe lines. In this case, the position of the pattern of the target die 51 can be determined using feature points that can identify the position of the pattern. As feature points, for example, the outermost ends of the arrangement of pads and bumps arranged on the bonding surface of the target die 51, regions with a non-periodic arrangement, or the outer edge (outer shape) of the die can be used.

[0062] For example, the control unit CNT can measure the position of the pattern on the target die 51 by measuring the image position of the alignment mark or feature point projected onto the center of the image acquired by the die observation camera 421. Measuring the position of the target die 51 may include measuring the amount of rotation of the target die 51 (rotation in the θZ direction). The amount of rotation of the target die 51 can be measured, for example, by determining the position of each of the multiple feature points on the bonding surface 51a of the target die 51 based on the image obtained by the die observation camera 421. The position of each of the multiple feature points can be determined based on multiple images obtained by individually imaging each feature point while driving the bonding head 432 with the stage 43. Alternatively, if the entire target die 51 fits within the field of view of the die observation camera 421, the position of each of the multiple feature points can be determined from an image of the entire bonding surface 51a of the target die 51 captured by the die observation camera 421. The amount of rotation of the target die 51 can be corrected by rotating the bonding head 432 with the stage 43 during the bonding process. However, since the interferometer 422 has a narrow measurement range in the rotational direction, if the amount of rotation of the target die 51 is large, it is desirable to reposition the target die 51 on the bonding head 432 so that the amount of rotation of the target die 51 is corrected. If the target die 51 is repositioned on the bonding head 432, it is necessary to measure the position of the target die 51 again.

[0063] Furthermore, during the execution of step S103, the surface position (height) of the bonded surface 51a of the target die 51 may be measured using height measuring means (not shown) for measuring the surface position (height) of the bonded surface 51a of the target die 51. This is because there is variation in the thickness of the target die 51, and the surface position of the bonded surface 51a of the target die 51 is important for precisely managing (controlling) the gap between the wafer 6 and the target die 51 during the bonding process. In addition, the height (i.e., the height distribution of the bonded surface 51a of the target die 51) may be measured at multiple locations on the bonded surface 51a of the target die 51, and the relative orientation (tilt) of the wafer 6 and the target die 51 may be adjusted during the bonding process based on the measurement results. This adjustment of the relative orientation can be performed by a tilt mechanism mounted on the wafer chuck 423 and / or stage 43.

[0064] Here, it is desirable to generate information indicating the correspondence between the measured characteristic points of the die 51 and the external shape of the die 51 itself. This correspondence indicates the positional relationship between the external shape of the die 51 and the element pattern 501 or alignment marks 502 within the bonding surface 51a. This information indicating the correspondence is stored in a storage device (not shown) located inside or outside the device. In step S103, the correspondence between the position of the characteristic points of the die 51 and the external shape of the die 51 was determined by measuring all or part of the element pattern 501 or alignment marks 502 within the bonding surface 51a, which are the characteristic points of the die 51, and the external shape of the die 51. However, it is not limited to this, and the information indicating the correspondence may be generated by an external device and input to the bonding device 100A.

[0065] Furthermore, it is desirable to measure the quality of the bonding surface 51a of the target die 51 in step S103. Quality may include the good condition of the target die 51, the state of foreign matter adhesion to the bonding surface 51a of the target die 51, and the activation state of the bonding surface 51a of the target die 51. For example, in the case of hybrid bonding, if foreign matter adheres to the bonding surface 51a during transport of the target die 51, it will affect the bonding strength of the target die 51, so the quality of the die immediately before the bonding process is important. The quality of the target die 51 is determined by the control unit CNT based on the image obtained by observing the outer shape of the target die 51 and the bonding surface 51a (element pattern 501) of the target die 51 with the die observation camera 421. Alternatively, the quality of the target die 51 may be determined by the control unit CNT by first acquiring information of the die 51 on the dicing frame 5 with the pickup unit 3 and comparing that information with the information of the die 51 acquired on the bonding head 432.

[0066] In step S104, the control unit CNT drives the stage 43 to align the wafer 6 and the target die 51 so that the pattern of the target area of ​​the wafer 6 and the pattern of the target die 51 overlap. As described above, the target area of ​​the wafer 6 is the bonding area on which the target die 51 on the bonding head 432 is to be bonded, among the multiple bonding areas on the bonding surface 6a of the wafer 6. For example, as shown in Figure 4(c), the control unit CNT moves the stage 43 so that the target area of ​​the wafer 6 is within the field of view of the wafer observation camera 431. The wafer observation camera 431 then photographs the target area of ​​the wafer 6, and the position of the pattern provided in the target area of ​​the wafer 6 is determined based on the image obtained. As a result, the control unit CNT can align the target area of ​​the wafer 6 and the target die 51 based on the position of the pattern of the target die 51 obtained in step S103 and the position of the pattern of the target area of ​​the wafer 6 obtained in step S104. At this time, it is preferable to align the wafer 6 and the target die 51 so as to reduce the relative rotational and / or orientation misalignment between the wafer 6 and the target die 51. Furthermore, if it is predicted that the relative position of the wafer 6 and the target die 51 will change (shift) during bonding, the change in the relative position may be used as an offset amount to align the wafer 6 and the target die 51. This offset amount can be obtained in advance through experiments or simulations. Note that if the position of the pattern in the target region of the wafer 6 can be obtained in the wafer alignment in step S102, the process of photographing the target region of the wafer 6 with the wafer observation camera 431 to determine the position of the pattern in the target region may be omitted in step S104.

[0067] In step S105, the control unit CNT bonds the target die 51 to the target area of ​​the wafer 6 by narrowing the distance between the wafer 6 and the target die 51 (bonding process). The bonding process may be performed by driving the bonding head 432 (target die 51) in the Z direction, or by driving the wafer chuck 423 (wafer 6) in the Z direction. Alternatively, the bonding process may be performed by driving the bonding head 432 (target die 51) and the wafer chuck 423 (wafer 6) relatively in the Z direction. In order to control the distance between the wafer 6 and the target die 51 with high precision, it is preferable to provide a detection unit (e.g., an encoder) that detects the position of the bonding head 432 and / or the wafer chuck 423 in the Z direction, and to perform feedback control based on the detection result of the detection unit. Here, the bonding process is performed with the bonding head 432 positioned inside the lower space S, as shown in Figure 4(d). That is, when performing the bonding process, the stage 43 moves so that the bonding head 432 is positioned inside the lower space S.

[0068] Even during the bonding process, the relative positions of the wafer 6 and the target die 51 in the XY direction can be controlled to improve the alignment accuracy between the wafer 6 and the target die 51. In this case, it is preferable that the width of the mirror 433 in the Z direction be set so that light from the interferometer 422 shines on the mirror 433 even when the stage 43 is driven in the Z direction. Furthermore, a detection unit (e.g., an encoder, a gap sensor) that detects the relative position of the wafer chuck 423 and the stage 43 in the XY direction may be provided. In this case, during the bonding process, the relative position of the wafer chuck 423 and the stage 43 in the XY direction can be detected (monitored) by the detection unit, and feedback control of the relative position can be performed. Note that when the wafer 6 and the target die 51 come into contact, the position of the stage 43, which is being feedback-controlled based on the measurement results of the interferometer 422, becomes constrained. Therefore, it is preferable to switch the method of controlling the relative position of the wafer 6 and the target die 51 in the XY direction before and after contact, such as stopping the feedback process when contact between the wafer 6 and the target die 51 begins.

[0069] Furthermore, in the case of bump bonding, the necessary processes for bump bonding, such as pressing the target die 51 onto the wafer 6 with a predetermined pressure (compression pressure), may be performed in step S105. In the case of hybrid bonding, the process of applying an impact that serves as a trigger to start bonding may be performed in step S105. The process of observing the bonding state (amount of bonding misalignment) between the wafer 6 and the target die 51 after bonding may also be performed in step S105.

[0070] In step S106, the control unit CNT determines whether or not the die 51 has been bonded to all of the multiple bonding regions on the retained surface 6a of the wafer 6. Typically, several tens to several hundreds of semiconductor devices are formed as multiple bonding regions on a single wafer 6, and the die 51 can be bonded to each of these bonding regions. If there is a bonding region on the wafer 6 to which the die 51 should be bonded next (the next target region), the process returns to step S202. In other words, the supply process and the bonding process are performed alternately on a single wafer 6. On the other hand, if there is no next target region on the wafer 6, that is, if the die 51 has been bonded to all of the multiple bonding regions on the retained surface 6a of the wafer 6, the process proceeds to step S107.

[0071] In this embodiment, an example has been described in which it is determined after the completion of the bonding process whether or not there is a next target area and the process returns to step S202. However, the determination of whether or not there is a next target area may be made before the completion of the bonding process. In this case, step S202 can be performed in parallel with the execution of the bonding process. That is, in parallel with the execution of the bonding process, the die 51 to be bonded to the next target area is picked up from the dicing frame 5 (sheet 5a). At this time, by providing multiple bonding heads 432 and / or pickup heads 31, parallel processing can be performed even more quickly. Also, when multiple types of dies 51 are bonded to each bonding area (semiconductor device) on the wafer 6, the bonding of the next type of die is started after the bonding of one type of die has been performed on all bonding areas of the wafer 6. When the bonding of the next type of die is started, the loading operation of the dicing frame 5 on which the next type of die is placed (step S201) is performed, and then the die pickup in step S202 may be performed.

[0072] In step S107, the control unit CNT uses a wafer transport mechanism (not shown) to remove the wafer 6, in which each of the multiple bonding regions has a die 51 bonded, from the wafer chuck 423. The wafer 6 may be returned to the container (e.g., FOUP) used to load the wafer 6, or to a different container. However, since the overall thickness of the wafer 6 with the die 51 bonded changes, and the gaps between the wafers 6 need to be widened compared to the wafer 6 before the bonding process, it is preferable to return it to a different container. The above describes the operation flow of the bonding apparatus 100A for bonding each of the multiple bonding regions on a single wafer 6. When bonding dies 51 to each of multiple wafers 6, the flowchart in Figure 3 will be repeated.

[0073] Note that the number of dies 51 on the dicing frame 5 and the number of bonding regions on the wafer 6 are generally different, so the loading of wafers 6 and dicing frames 5 are often not synchronized. If all dies 51 on the dicing frame 5 are used up during the bonding of dies 51 to one wafer 6, the next dicing frame 5 can be loaded into the bonding apparatus 100A. On the other hand, if dies 51 remain on the dicing frame 5 after the bonding of dies 51 to one wafer 6 is completed, the remaining dies 51 can be used for the next wafer 6.

[0074] As described above, in the bonding apparatus 100A of this embodiment, the wafer chuck 423 is configured to hold the wafer 6 with the bonding surface 6a of the wafer 6 facing downwards. In the supply process, the bonding head 432 is positioned outside the lower space S, and in the bonding process, the bonding head 432 is positioned inside the lower space S. With this configuration, the likelihood of foreign matter adhering (accumulating) on ​​the bonding surface 6a of the wafer 6 and causing bonding defects between the wafer 6 and the die 51 can be reduced.

[0075] <Second Embodiment> A second embodiment of the present invention will now be described. In a wafer chuck 423 that holds the wafer 6 with the bonding surface 6a of the wafer 6 facing downward, the wafer 6 may fall out of the wafer chuck 423 in the event of an abnormality. Therefore, the bonding apparatus 100B of this embodiment may further include a receiving member 441 for receiving the wafer 6 that has fallen out of the wafer chuck 423. This embodiment basically follows the first embodiment, and can be used in accordance with the first embodiment except for the matters mentioned below.

[0076] Figure 6 is a schematic diagram showing an example configuration of the bonding apparatus 100B of the second embodiment. The bonding apparatus 100B of this embodiment has basically the same configuration as the bonding apparatus 100A of the first embodiment, but differs in that a receiving member 441 is provided on the wafer chuck 423. The receiving member 441 is a member for receiving the wafer 6 that has fallen out of the wafer chuck 423. The receiving member 441 is positioned below at least a part of the outer periphery (periphery) of the wafer 6 held by the wafer chuck 423, and is spaced apart from the wafer 6. As shown in Figure 7, the receiving member 441 of this embodiment is configured as a claw-shaped member that can receive the wafer 6 that has fallen out of the wafer chuck 423, but the shape of the receiving member 441 is not limited to a claw shape. Figure 7 is a view of the wafer chuck 423 of this embodiment from below (-Z direction side). Also, the number of receiving members 441 is not limited to two, but may be one or three or more.

[0077] Here, the receiving member 441 may be configured as a fall prevention member to prevent the wafer 6 from falling out of the wafer chuck 423. The receiving member 441 as a fall prevention member may be configured, for example, to contact at least a portion of the outer periphery (periphery) of the wafer 6 held by the wafer chuck 423 and to press that at least portion against the wafer chuck 423.

[0078] The bonding apparatus 100B of this embodiment may further include a drive mechanism 442 that drives a receiving member 441 so that it can be inserted and removed from below the outer periphery of the wafer 6 held by the wafer chuck 423, as shown in Figure 8. For example, the drive mechanism 442 may be configured to drive the receiving member 441 in the XY direction. This makes it possible to adjust the position of the receiving member 441 in the XY direction according to the size of the wafer 6 held by the wafer chuck 423. In addition, by retracting the receiving member 441 when loading the wafer 6 into the wafer chuck 423 or when unloading the wafer 6 from the wafer chuck 423, it is possible to avoid the wafer transport mechanism coming into contact with the receiving member 441.

[0079] <Embodiment of Article Manufacturing Method> A method for manufacturing articles (semiconductor IC elements, liquid crystal display elements, MEMS, etc.) using the above-described bonding apparatus will now be explained. The article manufacturing method according to the embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having a microstructure. The article manufacturing method of this embodiment includes the steps of: bonding a second member to each of a plurality of regions on the bonding surface of a first member using the above-described bonding apparatus; processing the first member to which the second member has been bonded to each of the plurality of regions; and manufacturing an article from the processed first member. The first member is, for example, a wafer (substrate), and the second member is, for example, a die. Furthermore, the manufacturing method includes other well-known steps (probing, dicing, bonding, packaging, etc.). The article manufacturing method of this embodiment is advantageous over conventional methods in at least one of the performance, quality, productivity, and production cost of the article.

[0080] <Summary of Embodiments> The disclosures herein include at least the following joining devices and methods for manufacturing articles. (Item 1) A joining device for joining a second member to each of a plurality of regions on the joining surface of a first member, A first holding portion that holds the first member with the surface to be joined facing downwards, It comprises a second retaining part for holding the second member, In the supply process in which the second member is supplied to the second holding portion, the second holding portion is positioned outside the space below the first member held by the first holding portion. A joining apparatus characterized in that, in a joining process in which the second member supplied to the second holding portion is joined to one of the plurality of regions, the second holding portion is positioned inside the space. (Item 2) The stage further comprises the second holding part, The joining apparatus according to item 1, characterized in that the stage moves so that the second holding portion is positioned outside the space during the supply process, and moves so that the second holding portion is positioned inside the space during the joining process. (Item 3) The joining apparatus according to item 2, further comprising a first camera for photographing the joining surface of the first member held by the first holding part, wherein the first camera is provided on the stage. (Item 4) The joining apparatus according to item 3, characterized in that, before the joining process, the stage moves so that, among the plurality of regions, the region to be joined to the second member supplied to the second holding unit by the supply process is photographed by the first camera. (Item 5) The joining device according to any one of items 1 to 4, further comprising a second camera for photographing the second member supplied to the second holding portion by the supply process when the second holding portion is positioned outside the space. (Item 6) The first holding portion is further provided with a fixing member to which it is fixed, The joining device according to item 5, characterized in that the second camera is provided on the fixing member. (Item 7) The system further comprises a stage provided with the second holding portion, and a first camera for photographing the joined surface of the first member held by the first holding portion, The first camera is provided on the stage so as to be positioned to the side of the second holding portion in the first direction, The joining device according to item 6, characterized in that the second camera is provided on the fixing member so as to be positioned to the side of the first holding portion in a second direction opposite to the first direction. (Item 8) The receiving member further comprises a receiving member for receiving the first member that has fallen off the first holding part, The joining device according to any one of items 1 to 7, characterized in that the receiving member is positioned below at least a portion of the outer periphery of the first member, which is held by the first holding portion, and at a distance from the first member. (Item 9) The joining device according to item 8, further comprising a drive mechanism for driving the receiving member so that it can be inserted into or removed from below the outer circumference of the first member held by the first holding portion. (Item 10) The joining device according to any one of items 1 to 9, further comprising a supply head that picks up one second member from a sheet on which a plurality of second members are arranged and supplies it to the second holding unit in the supply process. (Item 11) The bonding apparatus according to item 10, characterized in that the supply head supplies the picked-up second member to the second holding section without flipping it over. (Item 12) A joining apparatus according to any one of items 1 to 11, characterized in that the supply process and the joining process are performed alternately. (Item 13) The bonding apparatus according to any one of items 1 to 12, characterized in that the first member is a substrate and the second member is a die. (Item 14) A step of joining a second member to each of multiple regions on the joining surface of a first member using a joining device described in any one of items 1 to 13, A process of processing the first member, wherein the second member is joined to each of the plurality of regions, A process for manufacturing an article from the processed first component, A method for manufacturing articles, characterized by including the following:

[0081] The invention is not limited to the embodiments described above, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, claims are attached to disclose the scope of the invention. [Explanation of Symbols]

[0082] 3: Pickup unit, 31: Pickup head, 32: Release head, 4: Bonding unit, 423: Wafer chuck, 43: Stage, 432: Bonding head, 51: Die (second component), 6: Wafer (first component), CNT: Control unit

Claims

1. A joining device for joining a second member to each of a plurality of regions on the joining surface of a first member, A first holding portion that holds the first member with the surface to be joined facing downwards, It comprises a second retaining part that holds the second member, In the supply process in which the second member is supplied to the second holding portion, the second holding portion is positioned outside the space below the first member held by the first holding portion. A joining device characterized in that, in a joining process in which the second member supplied to the second holding portion is joined to any of the plurality of regions, the second holding portion is positioned inside the space.

2. The stage further comprises the second holding portion, The joining apparatus according to claim 1, characterized in that the stage moves so that the second holding portion is positioned outside the space during the supply process, and moves so that the second holding portion is positioned inside the space during the joining process.

3. The joining apparatus according to claim 2, further comprising a first camera for photographing the joining surface of the first member held by the first holding portion, wherein the first camera is provided on the stage.

4. The joining apparatus according to claim 3, characterized in that the stage moves before the joining process so that the target region among the plurality of regions where the second member supplied to the second holding unit by the supply process is to be joined is photographed by the first camera.

5. The joining apparatus according to claim 1, further comprising a second camera for photographing the second member supplied to the second holding portion by the supply process when the second holding portion is positioned outside the space.

6. The first holding portion is further provided with a fixing member to which it is fixed. The joining device according to claim 5, characterized in that the second camera is provided on the fixing member.

7. The system further comprises a stage provided with the second holding portion, and a first camera for photographing the joined surface of the first member held by the first holding portion, The first camera is provided on the stage so as to be positioned to the side of the second holding portion in the first direction, The joining device according to claim 6, characterized in that the second camera is provided on the fixing member so as to be positioned to the side of the first holding portion in a second direction opposite to the first direction.

8. The receiving member further comprises a receiving member for receiving the first member that has fallen off the first holding part. The joining device according to claim 1, characterized in that the receiving member is positioned below at least a portion of the outer periphery of the first member held by the first holding portion, and at a distance from the first member.

9. The joining device according to claim 8, further comprising a drive mechanism for driving the receiving member so that it can be inserted into or removed from below the outer circumference of the first member held by the first holding portion.

10. The joining apparatus according to claim 1, further comprising a supply head that picks up one second member from a sheet on which a plurality of second members are arranged and supplies it to the second holding unit in the supply process.

11. The bonding apparatus according to claim 10, characterized in that the supply head supplies the picked-up second member to the second holding unit without flipping it over.

12. The joining apparatus according to claim 1, characterized in that the supply process and the joining process are performed alternately.

13. The bonding apparatus according to claim 1, characterized in that the first member is a substrate and the second member is a die.

14. A step of joining a second member to each of a plurality of regions on the surface to be joined of a first member using a joining device according to any one of claims 1 to 13, A process of processing the first member, wherein the second member is joined to each of the plurality of regions, A process for manufacturing an article from the processed first component, A method for manufacturing articles, characterized by including the following:

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