Indication device

Abstract

To provide a display device with light detection capabilities. Features of biometric authentication, such as fingerprint authentication. The present invention provides a display device that combines the functionality of a touch panel with the functionality of biometric authentication. To provide a display device. [Solution] The display device comprises a first substrate, a light guide plate, a first light-emitting element, and a second light-emitting element. It has a light-receiving element and a first substrate and a light guide plate which are arranged opposite each other. The light-emitting element is placed between the first substrate and the light guide plate. The first light-emitting element is connected via the light guide plate. The second light-emitting element has the function of emitting the first light toward the side surface of the light guide plate. It has the function of emitting light. The photodetector has the function of receiving the second light and converting it into an electrical signal. Furthermore, the first light includes visible light, and the second light includes infrared light.

Description

Technical Field

[0001] One aspect of the present invention relates to a display device. One aspect of the present invention relates to a display device including a light-emitting element and a light-receiving element. One aspect of the present invention relates to a display device having an authentication function. One aspect of the present invention relates to a touch panel. Note that one aspect of the present invention is not limited to the above technical field. Examples of the technical field of one aspect of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (for example, touch sensors, etc.), input / output devices (for example, touch panels, etc.), their driving methods, or their manufacturing methods. A semiconductor device refers to all devices that can function by utilizing semiconductor characteristics.

[0002] Note that one aspect of the present invention is not limited to the above technical field. Examples of the technical field of one aspect of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (for example, touch sensors, etc.), input / output devices (for example, touch panels, etc.), their driving methods, or their manufacturing methods. A semiconductor device refers to all devices that can function by utilizing semiconductor characteristics.

Background Art

[0003] Digital Signage (electronic signage), PID (Public ic Information Display), and the like. Also, as mobile information terminals, the development of smartphones and tablet terminals equipped with touch panels has been progressing.

[0004] As display devices, for example, light-emitting devices having light-emitting elements have been developed. A light-emitting element (also referred to as an EL element) that utilizes the electroluminescence (hereinafter abbreviated as EL) phenomenon is easy to make thin and lightweight and is fast with respect to an input signal.​​​​​​​​ It has features such as being able to respond to and being able to be driven using a DC low-voltage power supply, and the display device It is being applied. For example, Patent Document 1 describes a flexible light-emitting diode to which an organic EL element is applied. The optical device has been disclosed. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2014-197522 [Overview of the project] [Problems that the invention aims to solve]

[0006] One aspect of the present invention aims to provide a display device having a light detection function. One of the objectives is to provide a display device that has biometric authentication functions, such as fingerprint authentication. Alternatively, a display device that combines the functions of a touch panel and biometric authentication. One of the challenges is to provide it. Alternatively, one of the challenges is to provide a highly convenient display device. One of the objectives is to provide a multi-functional display device. Or, to provide a novel One of the objectives is to provide a display device with a specific configuration.

[0007] Furthermore, the description of these problems does not preclude the existence of other problems. One approach does not require that all of these issues be resolved. The title can be extracted from descriptions such as the specification, drawings, and claims. [Means for solving the problem]

[0008] One aspect of the present invention comprises a first substrate, a light guide plate, a first light-emitting element, a second light-emitting element, A display device having a light-receiving element. The first substrate and the light guide plate are provided facing each other. The first light-emitting element and the light-receiving element are provided between the first substrate and the light guide plate. The optical element has the function of emitting a first light through a light guide plate. The second light-emitting element has the function of emitting a first light through a light guide plate. It has the function of emitting a second light to the side of the light-receiving element. The light-receiving element receives the second light and It has the function of converting into energy signals. Furthermore, the first light includes visible light, and the second light includes infrared light. nothing.

[0009] Another aspect of the present invention comprises a first substrate, a second substrate, a light guide plate, and a first light-emitting element. A display device having a first substrate and a light guide plate. This is provided opposite to the second substrate. The first light-emitting element and the light-receiving element are the first It is provided between the substrate and the second substrate. The first light-emitting element transmits the first light through the light guide plate. It has the function of emitting light. The second light-emitting element emits a second light toward the side surface of the light guide plate. It has the function of receiving a second light and converting it into an electrical signal. The first light includes visible light, and the second light includes infrared light. The second substrate is 800 nm to 1 The refractive index for light in the 000nm wavelength range is lower than that of the light guide plate.

[0010] Another aspect of the present invention comprises a first substrate, a resin layer, a light guide plate, and a first light-emitting element. The device has a second light-emitting element and a light-receiving element. The first substrate and the light guide plate are They are provided opposite each other with a resin layer in between. The first light-emitting element and the light-receiving element are provided on the first substrate and It is provided between the resin layer. The first light-emitting element has the function of emitting first light through the light guide plate. The second light-emitting element has the function of emitting a second light to the side surface of the light guide plate. . The light-receiving element has a function of receiving the second light and converting it into an electrical signal. The first light includes visible light, and the second light includes infrared light. The resin layer is provided in contact with the light guide plate and has a function of bonding the first substrate and the light guide plate, and has a refractive index with respect to light in the wavelength range of 800 nm to 1000 nm lower than that of the light guide plate.

[0011] Also, in the above, it is preferable to have a conductive layer that transmits visible light. At this time, the conductive layer is provided in contact with the light guide plate, and preferably has a refractive index with respect to light in the wavelength range of 800 nm to 1000 nm higher than that of the light guide plate. Furthermore, the conductive layer preferably functions as an electrode of a capacitive touch sensor.

[0012] Also, in the above, the first light-emitting element preferably has a first pixel electrode, a light-emitting layer, and a first electrode. Also, the light-receiving element preferably has a second pixel electrode, an active layer, and a second electrode. At this time, the light-emitting layer and the active layer preferably contain different organic compounds. Also, the first pixel electrode and the second pixel electrode are preferably provided on the same plane.

[0013] Alternatively, in the above, the first light-emitting element preferably has a first pixel electrode, a light-emitting layer, and a common electrode. Also, the light-receiving element preferably has a second pixel electrode, an active layer, and a common electrode. At this time, the light-emitting layer and the active layer preferably contain different organic compounds. Also, the first pixel electrode and the second pixel electrode are provided on the same plane, and the common electrode preferably has a portion overlapping with the first pixel electrode through the light-emitting layer and a portion overlapping with the second pixel electrode through the active layer.

[0014] Alternatively, in the above, the first light-emitting element comprises a first pixel electrode, a common layer, a light-emitting layer, and a common layer. It is preferable to have a conductive electrode. Furthermore, the photodetector includes a second pixel electrode, a common layer, an active layer, And it is preferable to have a common electrode. In this case, the light-emitting layer and the active layer are different from each other. It is preferable that it contains an organic compound. Also, the first pixel electrode and the second pixel electrode are the same. It is preferable that it be provided on a surface. Also, the common layer overlaps with the first pixel electrode and the light-emitting layer. It is preferable to have a portion that overlaps with the second pixel electrode and the active layer. The conductive electrode has a portion that overlaps with the first pixel electrode via the common layer and the light-emitting layer, and the common layer and the active layer It is preferable to have a portion that overlaps with the second pixel electrode via a certain means.

[0015] Alternatively, in the above, the first light-emitting element comprises a first pixel electrode, a light-emitting layer, and a first electrode. It is preferable to have a second pixel electrode, an active layer, and a second electrode. It is preferable that the first pixel electrode and the second pixel electrode have different surfaces. It is preferable that it be provided on top. Furthermore, the light-emitting layer contains an organic compound, and the active layer is silicone It is preferable to include n. [Effects of the Invention]

[0016] According to one aspect of the present invention, a display device having a light detection function can be provided. Alternatively, a fingerprint recognition device can be provided. A display device with biometric authentication functionality, such as a certificate, can be provided. Alternatively, a touch panel and It is possible to provide a display device that combines the functions of both digital and biometric authentication. Alternatively, it can provide a highly convenient display device. We can provide a display device. Or, we can provide a multi-functional display device. Or, a novel configuration A display device having the following characteristics can be provided.

[0017] Furthermore, the description of these effects does not preclude the existence of other effects. One embodiment does not necessarily have to possess all of these effects. Furthermore, other effects may be considered. This information can be extracted from descriptions such as specifications, drawings, and claims. [Brief explanation of the drawing]

[0018] [Figure 1] Figures 1A, 1B, 1D, 1F, 1G, and 1H show examples of display device configurations. Figures 1C and 1E show examples of images. [Figure 2] Figures 2A to 2D show examples of display device configurations. [Figure 3] Figures 3A to 3C show examples of display device configurations. [Figure 4] Figures 4A to 4C show examples of the configuration of a display device. [Figure 5] Figures 5A and 5B show examples of display device configurations. [Figure 6] Figures 6A to 6C show examples of display device configurations. [Figure 7] Figure 7 shows an example of a display device configuration. [Figure 8] Figure 8 shows an example of a display device configuration. [Figure 9] Figures 9A and 9B show examples of the configuration of a display device. [Figure 10] Figures 10A and 10B show examples of display device configurations. [Figure 11] Figure 11 shows an example of a display device configuration. [Figure 12] Figures 12A and 12B show examples of pixel circuit configurations. [Figure 13] Figures 13A and 13B show examples of electronic device configurations. [Figure 14] Figures 14A to 14D show examples of the configuration of electronic equipment. [Figure 15] Figures 15A to 15F show examples of electronic device configurations. [Modes for carrying out the invention]

[0019] The embodiments will be described below with reference to the drawings. However, many embodiments are described. It can be implemented in different ways, without deviating from its purpose and scope. Those skilled in the art will readily understand that the form and details can be modified in various ways. Therefore, the present invention This shall not be interpreted as being limited to the contents described in the following embodiments.

[0020] In the configuration of the invention described below, the same part or part having a similar function is The same reference numerals are used consistently across different drawings, and explanations of their repetition are omitted. When referring to the function of [this], the hatch pattern is the same, and sometimes no specific symbol is assigned.

[0021] In each figure described herein, the size, layer thickness, or area of ​​each component is not specified. This may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale. I can't.

[0022] In this specification, ordinal numbers such as "the first," "the second," etc., are used to avoid confusion of constituent elements. This is added for the purpose of providing a numerical limit, and is not intended to limit the number of items.

[0023] In this specification, a display panel, which is one form of a display device, displays an image or the like on its display surface. It has the function of (powering). Therefore, the display panel is one form of an output device.

[0024] Furthermore, in this specification, the substrate of the display panel may be, for example, FPC (Flexible Printed Circuit). (inted Circuit) or TCP (Tape Carrier Packa A connector such as a ge is attached, or the circuit board has a COG (Chip On A display panel module or display module is a device on which an IC is mounted using a glass or similar method. It may be called a display panel, or simply a display board.

[0025] In this specification, a touch panel, which is one form of a display device, displays images, etc. on its display surface. The display function and the detection of objects such as fingers or styluses touching, pressing, or coming close to the display surface. It has the function of a touch sensor that detects things like touching. Therefore, touch panel This is one form of an input / output device.

[0026] A touch panel is, for example, a display panel (or display device) with a touch sensor. It can also be called a display panel (or display device) with a touch function. It can also be configured to have a panel and a touch sensor panel. Alternatively, the display panel The configuration can also include a touch sensor functioning either internally or on its surface.

[0027] Furthermore, in this specification, etc., a touch panel circuit board with connectors and ICs mounted on it is considered to be a touch panel circuit board. It may be called a touch panel module, display module, or simply a touch panel. be.

[0028] (Embodiment 1) This embodiment describes an example of the configuration of a display device according to one aspect of the present invention.

[0029] A display device according to one aspect of the present invention comprises a display element that emits visible light and a light-receiving element that receives infrared light. The display element has a (light receiving device). The display element has a light-emitting element (first light-emitting element (light-emitting device It is preferable that the light-receiving element is a photoelectric conversion element. It seems so.

[0030] Furthermore, the display device has a substrate (also called the first substrate) and a light guide plate. Display element and The light-receiving element is placed between the first substrate and the light guide plate. Furthermore, the display device is located on the side of the light guide plate. It has a light-emitting element (also called a second light-emitting element) that emits infrared light.

[0031] Visible light emitted from the display element is emitted to the outside via a light guide plate. The display device is By having multiple such display elements arranged in a trix pattern, an image can be displayed. .

[0032] Infrared light incident from the side of the light guide plate diffuses while undergoing repeated total internal reflection inside the light guide plate. Here, when an object touches the surface of the light guide plate (the side opposite to the first substrate), the light guide plate and the object... Infrared light is scattered at the interface of the body, and a portion of this scattered light is incident on the photodetector. When infrared light is received, it can be converted into an electrical signal corresponding to its intensity and output. The device has multiple light-receiving elements arranged in a matrix, so that an object touching the light guide plate... It can detect location information, shape, etc. In other words, the display device is an image sensor. It can function as a panel, touch sensor panel, etc.

[0033] Furthermore, infrared light, which is invisible to the user, is used as the light that diffuses inside the light guide plate. By doing so, without reducing the visibility of the displayed image, imaging or sensing by the light-receiving element is possible. It is possible to perform the matching.

[0034] The light emitted by the second light-emitting element preferably includes infrared light and preferably includes near-infrared light. More preferable. In particular, having one or more peaks in the wavelength range of 700 nm to 2500 nm. Near-infrared light can be suitably used. In particular, near-infrared light with a wavelength of 750 nm to 1000 nm is suitable. By using light with one or more peaks in its range, the selection of materials to be used for the active layer of the photodetector becomes possible. This is preferable because it broadens the range.

[0035] The shape of a fingerprint can be captured by touching the light guide plate of the display device with a fingertip. The light guide plate has concave and convex parts, and when a finger touches the light guide plate, infrared light is scattered at the convex parts of the fingerprint that touch the light guide plate. It is easily disturbed. Therefore, the intensity of infrared light incident on the photodetector that overlaps with the raised parts of the fingerprint is high. As a result, the intensity of infrared light incident on the photodetector superimposed on the recess decreases. A pattern can be imaged. A device having a display device according to one aspect of the present invention can capture an image. Fingerprint authentication, a type of biometric authentication, can be performed using images of fingerprints.

[0036] Furthermore, the display device can also image blood vessels, especially veins, in fingers and hands. For example, waves Light with a wavelength of 760 nm and nearby is not absorbed by reduced hemoglobin in veins, therefore, By receiving reflected light from the palm or fingers with a photodetector and creating an image, the location of veins can be detected. A device having a display device according to one aspect of the present invention can capture images of veins. This allows for vein authentication, a type of biometric authentication.

[0037] Furthermore, a device having a display device according to one aspect of the present invention can simultaneously perform fingerprint authentication and vein authentication. It is also possible to do this. This allows for a higher level of security without increasing the number of parts. It can perform highly accurate biometric authentication.

[0038] Furthermore, a second substrate may be provided between the first substrate and the light guide plate. For example, the second The substrate may use an encapsulation substrate or protective film to enclose the light-emitting element. Yes, it is possible. Furthermore, a resin layer may be provided between the first substrate and the light guide plate to bond them together. i. At this time, the resin layer has a refractive index for infrared light emitted by the second light-emitting element, and the light guide plate By using a lower-grade material, the infrared light diffusing the light guide plate is transmitted to the resin layer side, and the light-receiving element It is possible to suppress the incidence of light.

[0039] Furthermore, a conductive layer that transmits visible light may be provided in contact with the light guide plate. The conductive layer is made of a material whose refractive index for infrared light emitted by the second light-emitting element is higher than that of the light guide plate. Using this method is preferable because it allows the infrared light to diffuse into the conductive layer. The conductive layer provided in contact with the surface can be used, for example, as an electrostatic shielding film. The conductive layer can also be used, for example, as an electrode in a capacitive touch sensor. Furthermore, the conductive layer can also be used as an electrode or wiring for various sensors and functional elements. ru.

[0040] Here, when using a light-emitting element as the display element, OLED (Organic Li) ght Emitting Diode) and QLED(Quantum-dot Lig) It is preferable to use EL elements such as (Emitting Diode). The light-emitting substances that children possess include fluorescent substances (fluorescent materials) and phosphorescent substances (phosphorescent materials). Materials), inorganic compounds (such as quantum dot materials), substances that exhibit thermally activated delayed fluorescence (thermally activated delayed Thermally activated delayed fluoresc Examples include ence:TADF (materials). Also, as a light-emitting element, microLEDs are used. LEDs such as (Light Emitting Diodes) can also be used.

[0041] For example, a pn-type or pin-type photodiode can be used as the light-receiving element. Yes, it is possible. The light-receiving element is a photoelectric conversion element that detects light incident on the light-receiving element and generates an electric charge. It functions in this way. The amount of charge generated by a photoelectric conversion element is determined by the amount of incident light. In particular, It is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving element. Organic photodiodes are easy to make thin, light, and large in area, and also shape Due to its high degree of freedom in shape and design, it can be applied to various display devices.

[0042] The light-emitting element can have a laminated structure, for example, with a light-emitting layer between a pair of electrodes. The photodetector can have a laminated structure with an active layer between a pair of electrodes. The active layer can be made of semiconductor material. For example, an inorganic semiconductor material such as silicon. You can use it.

[0043] Furthermore, it is preferable to use an organic compound in the active layer of the light-receiving element. It is preferable to place one electrode of the light-receiving element (also called the pixel electrode) on the same plane. Furthermore, the other electrode of the light-emitting element and the light-receiving element is an electrode formed by a continuous conductive layer. It is more preferable to have a common electrode (also called a common electrode). Furthermore, the light-emitting element and the light-receiving element are common It is more preferable to have a layer. This makes the fabrication of the light-emitting element and the light-receiving element easier. This allows for the simplification of the process, reduction of manufacturing costs, and improvement of manufacturing yield. Cut.

[0044] Below, we will explain more specific examples with reference to the diagrams.

[0045] [Example of display device configuration 1] Figure 1A shows a schematic diagram of the display device 50. The display device 50 consists of a substrate 51, a substrate 52, and a light guide. Plate 59, light receiving element 53, light-emitting element 54, light-emitting element 57R, light-emitting element 57G, light-emitting element 57 B, has a functional layer 55, etc.

[0046] The light-emitting element 57R, light-emitting element 57G, light-emitting element 57B, and light-receiving element 53 are connected to the substrate 51 and It is located between the substrates 52.

[0047] Light-emitting elements 57R, 57G, and 57B are red (R) and green (G) respectively. ), or emits blue (B) light.

[0048] The display device 50 has multiple pixels arranged in a matrix. One pixel is It has the above subpixels. Each subpixel has one light-emitting element. For example, a pixel has, A configuration having three subpixels (three colors: R, G, and B, or yellow (Y), cyan (C), and (e.g., three colors including magenta (M)), or a configuration with four subpixels (R, G, B, white (W)). ) can be applied as four colors, or as four colors such as R, G, B, and Y. Furthermore, pixels are photodetectors It has a child 53. The light-receiving element 53 may be provided at all pixels, or at some pixels. They may be kicked. Also, one pixel may have multiple light-receiving elements 53.

[0049] The light guide plate 59 is provided on the substrate 52. The light guide plate 59 is used for visible light and infrared light. It is preferable to use a material that has high light transmittance for light with a wavelength of 600 nm. And the transmittance to light with a wavelength of 800 nm is 80% or more, preferably 85% or more. Preferably 90% or more, more preferably 95% or more, and 100% or less. You can use the fee.

[0050] Furthermore, the light guide plate 59 is made of a material with a high refractive index relative to the light emitted by the light-emitting element 54. Preferably, the refractive index for light with a wavelength of 800 nm is 1.2 or more and 2.5 or less. More preferably, use a material with a viscosity of 1.3 to 2.0, and more preferably, 1.4 to 1.8. It is possible.

[0051] Furthermore, the light guide plate 59 and the substrate 52 are provided in contact with each other, or they are bonded together with a resin layer or the like. It is preferable that the substrate 52 or resin layer in contact with the light guide plate 59 be at least The portion in contact with the light guide plate 59 has a wavelength range of 800 nm to 1000 nm greater than that of the light guide plate 59. A low refractive index for light is preferable.

[0052] The light-emitting element 54 is provided near the side surface of the light guide plate 59. It can emit infrared light (IR) from its side. The light-emitting element 54 includes light of the wavelengths mentioned above. A light-emitting element capable of emitting infrared light can be used. As for the light-emitting element 54, EL elements such as OLEDs and QLEDs, or LEDs can be used. Light-emitting element 54 Multiple of these may be provided along the side surface of the light guide plate 59.

[0053] Figure 1A shows a finger 60 touching the surface of the light guide plate 59. Inside the light guide plate 59 A portion of the diffused infrared light (IR) is reflected or scattered at the contact point between the light guide plate 59 and the finger 60. And, a portion of the scattered infrared light (IR(r)) is incident on the photodetector 53. This allows detection that finger 60 has come into contact with the light guide plate 59. 0 can function as a touch panel.

[0054] The functional layer 55 includes circuits for driving the light-emitting elements 57R, 57G, and 57B, and The functional layer 55 includes a switch, a transistor, Capacitors, wiring, etc. are provided. Note that the light-emitting elements 57R, 57G, and 57B Furthermore, when the light-receiving element 53 is driven in a passive matrix manner, switches and transistors are used. A configuration without a zista is also acceptable.

[0055] The display device 50 may have a function to detect the fingerprint of the finger 60. Figure 1B shows a light guide. A schematic diagram of the contact area when finger 60 is touching plate 59 is shown. Figure 1B shows alternating arrangements of light-emitting elements 57 and light-receiving elements 53.

[0056] Finger 60 has fingerprints formed by recesses and protrusions. Therefore, as shown in Figure 1B, the finger The raised parts of the pattern touch the light guide plate 59, and scattered IR(r) light is generated at these contact surfaces.

[0057] As shown in Figure 1B, the scattered light IR(r) scattered at the contact surface between the finger 60 and the light guide plate 59 is, It can be scattered isotropically from the contact surface. The intensity distribution of scattered IR(r) light is generally perpendicular to the contact surface. The intensity is highest in the directional direction, and the intensity distribution decreases as the angle increases in the oblique direction. Therefore, the light received by the light-receiving element 53 located directly below (overlapping with) the contact surface... The intensity is highest. Also, among the scattered IR(r) light, light with a scattering angle greater than a certain angle, As shown in Figure 1B, total internal reflection occurs on the other surface of the light guide plate 59 (the surface opposite to the contact surface), and light is received. The signal will no longer pass through to element 53.

[0058] The spacing between the light-receiving elements 53 is the distance between two protrusions of the fingerprint, preferably between adjacent recesses and protrusions. By setting the interval smaller than the distance between parts, a clear image of the fingerprint can be obtained. Since the distance between the recesses and protrusions of a human fingerprint is approximately 200 μm, for example, the arrangement of the light-receiving element 53 The row spacing is 400 μm or less, preferably 200 μm or less, and more preferably 150 μm or less. More preferably 100 μm or less, even more preferably 50 μm or less, and 1 μm or less The thickness is preferably 10 μm or more, and more preferably 20 μm or more.

[0059] Furthermore, at the contact surface between the finger 60 and the light guide plate 59, not only scattering but also reflection of infrared light (IR) occurs. In some cases, the reflection angle of reflected light changes depending on the incident angle of infrared light (IR), so scattered IR light may also be affected. The intensity distribution may differ from (r). However, the distance between the contact surface and the photodetector 53 However, if the spacing between the photodetectors 53 is sufficiently small, the scattered light IR(r) and reflected light The differences in intensity distribution are so small that they are negligible and therefore have almost no effect on the clarity of the captured image. It can be said that it doesn't resonate.

[0060] Figure 1C shows an example of a fingerprint image captured by the display device 50. Figure 1C shows within the imaging range 63. The outline of finger 60 is shown with a dashed line, and the outline of contact portion 61 is shown with a dashed line. By taking a high-contrast fingerprint 62 based on the difference in the amount of light incident on the light-receiving element 53, It can be visualized.

[0061] The display device 50 can also function as a touch panel or a pen tablet. Figure 1D shows the tip of the stylus 65 in contact with the light guide plate 59, in the direction of the dashed arrow. This shows the sliding motion.

[0062] As shown in Figure 1D, scattering occurs at the contact surface between the tip of the stylus 65 and the light guide plate 59. When the IR(r) light is incident on the photodetector 53 located in the area overlapping with the scattering surface, The position of the tip of the Tyrus 65 can be detected with high precision.

[0063] Figure 1E shows an example of the trajectory 66 of the stylus 65 detected by the display device 50. The display device 50 is capable of detecting the position of an object to be detected, such as a stylus 65, with high positional accuracy. Furthermore, it is possible to perform high-resolution rendering in drawing applications and the like.

[0064] Here, Figures 1F to 1H show examples of pixels 30 applicable to the display device 50.

[0065] The pixels 30 shown in Figures 1F and 1G each function as sub-pixels for display, and are red Color (R) pixels 31R, green (G) pixels 31G, blue (B) pixels 31B, and light-receiving pixels It has a pixel 32 that functions as an emitter. Pixels 31R, 31G, and 31B each function as an emitter. It has one or more optical elements 57R, light-emitting elements 57G, or light-emitting elements 57B. The pixel 32 receives It has one or more optical elements 53.

[0066] Figure 1F shows an example where three subpixels and pixel 32 are arranged in a 2x2 matrix. Figure 1G shows an example where three subpixels and pixel 32 are arranged in a horizontal row.

[0067] The pixel 30 shown in Figure 1H is an example that has a white (W) pixel 31W. Pixel 31W is, It has one or more white light-emitting elements. Here, four subpixels are arranged in a horizontal row, and below them Pixel 32 is located there.

[0068] Furthermore, the pixel configuration is not limited to the above, and various arrangement methods can be adopted.

[0069] [Example of display device configuration 2] The following describes an example of a display device configuration that differs in some aspects from the one described above.

[0070] [Configuration Example 2-1] The display device 50a shown in Figure 2A differs from the above-mentioned display device 50 in that it uses resin instead of a substrate 52. The main difference is that it has layer 71.

[0071] The resin layer 71 can be made of a material that is transparent to visible light. The layer 71 may have the function of bonding the substrate 51 and the light guide plate 59.

[0072] The resin layer 71 is provided in contact with the light guide plate 59. Here, the resin layer 71 is at least the guide In the portion in contact with the light plate 59, the wavelength range is 800 nm to 1000 nm greater than that of the light guide plate 59. A low refractive index for ambient light is preferable. This allows the light guide plate to function as shown in Figure 2A. Infrared light (IR) can be totally reflected at the interface between layer 59 and the resin layer 71.

[0073] [Configuration Example 2-2] The display device 50b shown in Figure 2B has a conductive layer 72, and is mainly different from the display device 50a in that it has a conductive layer 72. They are different.

[0074] The conductive layer 72 is provided in contact with the light guide plate 59. This shows an example where it is located between 9 and the resin layer 71.

[0075] By applying a predetermined potential to the conductive layer 72, it can function as an electrostatic shielding film. The conductive layer 72 prevents electrical noise input from the outside via the light guide plate 59 from affecting the display. This effectively prevents the device from reaching circuits and other components of the device 50b.

[0076] Furthermore, the conductive layer 72 can also function as an electrode for a sensor element such as a touch sensor. It is possible. In particular, it is preferable to use it as an electrode for a capacitive touch sensor.

[0077] The conductive layer 72 can be made of a conductive material that transmits visible light. A conductive material that transmits infrared light (IR) emitted by the light-emitting element 54 can be suitably used. .

[0078] The conductive layer 72, at least in the portion in contact with the light guide plate 59, is 800 mm thicker than the light guide plate 59. It is preferable to use a conductive material with a high refractive index for light in the wavelength range of nm to 1000 nm. As a result, as shown in Figure 2B, infrared light (IR) is transmitted not only to the light guide plate 59 but also to the conductive layer 7 The interior of 2 can also be configured to diffuse. Furthermore, the conductive layer 72 is more efficient than the resin layer 71. Because the refractive index is high for light in the wavelength range, infrared light (IR) is transmitted between the conductive layer 72 and the resin layer 71. Total internal reflection can be achieved at the interface.

[0079] Although an example with a resin layer 71 is shown here, a configuration with a substrate 52 may also be used. .

[0080] [Configuration Example 2-3] The display device 50c shown in Figure 2C has a light-emitting element 57R and a light-receiving element 53 on different surfaces. An example of a device being provided is shown. The display device 50c consists of a substrate 51a, a substrate 51b, and a functional layer. It has 55a, a functional layer 55b, etc.

[0081] The functional layer 55a is a layer having a circuit for driving the light-emitting element 57R, etc., and is provided on the substrate 51a. It is provided. Furthermore, the functional layer 55b is a layer having a circuit for driving the photodetector 53. It is provided on substrate 51b. Substrate 51a and substrate 51b are bonded together by an adhesive layer (not shown). It is preferable that it be fixed.

[0082] In this case, the active layer of the photodetector 53 is made of an inorganic semiconductor material such as silicon. This can be done. In this case, the active layer is made of single-crystal silicon, multi-crystalline silicon, depending on the wavelength of infrared light (IR). Crystalline silicon or amorphous silicon can be selected and used. Here, we show an example in which the functional layer 55b and the photodetector 53 are stacked on the substrate 51b. When a semiconductor substrate is used for substrate 51b, the substrate 51b consists of a functional layer 55b and a photodetector 5 It may form part of 3.

[0083] [Configuration Example 2-4] The display device 50d shown in Figure 2D has a light-emitting element 57R and a light-receiving element 53, and a functional layer 55. The main difference from the display device 50c is that it is positioned between the two components.

[0084] The active layer of the photodetector 53 uses an inorganic semiconductor material such as silicon as described above. This is possible. Also, when a semiconductor substrate is used as the substrate 51, the substrate 51 becomes the photodetector 5 It may also form part of the active layer of 3.

[0085] In addition, in the display devices 50c and 50d, a resin layer 71 is provided instead of the substrate 52. The configuration may be such that the elements are not connected, or it may be such that the elements are connected that the conductive layer 72 is present.

[0086] [Example of light guide plate configuration] A light guide plate applicable to a display device according to one embodiment of the present invention is provided, for example, in the display section of an electronic device. It can also serve as part of the housing, functioning as a display or touch surface. In this case, the light guide plate It also functions as a protective component to protect light-emitting elements, light-receiving elements, functional layers, etc. For example, reinforcement Glass or flexible films can be used as light guide plates.

[0087] Figure 3A shows an example of the configuration of the display device 50e. The display device 50e consists of a light guide plate 5 on a substrate 52. The configuration includes a 9a. Figure 3A shows an example having a flat light guide plate 59a.

[0088] The light guide plate 59a has an infrared light-emitting element 54 arranged along one end. There is a reflective layer 58 on the side of the light guide plate 59a opposite to the side where the light-emitting element 54 is provided. A reflective layer 58 is provided. The reflective layer 58 has the function of reflecting infrared light (IR). By doing so, the intensity distribution of infrared light (IR) diffused within the light guide plate 59a can be made uniform. Cut.

[0089] Figure 3B shows an example configuration of a display device 50f having a light guide plate 59b with curved ends. ru.

[0090] Similar to the light guide plate 59a, the light guide plate 59b is provided with a light-emitting element 54 along one end. A reflective layer 58 is provided along the other end. Inside the light guide plate 59b is infrared light (IR). It is spreading.

[0091] The ends of the light guide plate 59b are curved, and the light-emitting elements 54 and the reflective layer 58 are provided along these ends. This configuration creates a non-display area surrounding the display unit in an electronic device to which the display device 50f is applied. This is preferable because it allows for a reduction in the area of ​​the frame (also known as the picture frame).

[0092] Here, in the curved portion of the light guide plate 59b, some of the infrared light (IR) is emitted to the outside without total internal reflection. This can sometimes lead to a decrease in the intensity of infrared light (IR) diffused within the light guide plate 59b. By making the light guide plate 59b sufficiently thin, total internal reflection of infrared light (IR) occurs. The ratio can be increased. For example, the thickness of the light guide plate 59b can be 2 mm or less, preferably 1 mm. m or less, more preferably 0.8 mm or less, and even more preferably 0.7 mm or less, By setting the thickness to 0 μm or more, preferably 30 μm or more, and more preferably 50 μm or more, the light guide This can suppress the decrease in the intensity of infrared light (IR) within plate 59b.

[0093] Figure 3C shows that the substrate 51 and the like are curved and provided along a light guide plate 59c which is partially curved. This shows an example configuration of a 50g display device.

[0094] The substrate 51 can be made of a flexible material. If the radius is sufficiently large, an inorganic insulating substrate such as a glass substrate can be used for the substrate 51. Yes, it is possible. Furthermore, it is preferable to use a material containing an organic resin or the like as the substrate 51.

[0095] Furthermore, Figure 3C shows an example in which the substrate 51 and the light guide plate 59c are bonded together with a resin layer 71. In this way, when the substrate 51 is placed along the curved surface of the light guide plate 59c, the substrate If the structure is configured to bond with a resin layer 71 without providing 52, the bonding between the substrate 51 and the light guide plate 59c This is preferable because it makes the process easier. In addition, the relationship between the light receiving element 53 and the light guide plate 59c Because the distance can be reduced, the accuracy of position detection improves, and clearer images can be captured. This produces synergistic effects.

[0096] Figure 3C shows an example in which the light guide plate 59c has a curved portion and a flat portion. However, it may not have any flat parts and may have an overall curved shape.

[0097] The above is an explanation of an example of the configuration of a light guide plate.

[0098] [Example of display device configuration 3] The following describes a more specific example of a display device according to one aspect of the present invention.

[0099] [Configuration Example 3-1] Figure 4A shows a schematic cross-sectional view of the display device 10A.

[0100] The display device 10A has a light-receiving element 110 and a light-emitting element 190. The light-receiving element 110 is It has a pixel electrode 111, a common layer 112, an active layer 113, a common layer 114, and a common electrode 115. The light-emitting element 190 consists of a pixel electrode 191, a common layer 112, a light-emitting layer 193, and a common layer 114. It also has a common electrode 115.

[0101] Pixel electrode 111, pixel electrode 191, common layer 112, active layer 113, light-emitting layer 193, common The layer 114 and the common electrode 115 may each be a single-layer structure or a multi-layer structure. That's fine.

[0102] Pixel electrodes 111 and 191 are located on the insulating layer 214. The pixel electrode 191 can be formed using the same material and the same process.

[0103] The common layer 112 is located on the pixel electrode 111 and the pixel electrode 191. This layer is used in common by the light-receiving element 110 and the light-emitting element 190.

[0104] The active layer 113 overlaps with the pixel electrode 111 via the common layer 112. The light-emitting layer 193 is It overlaps with the pixel electrode 191 via the common layer 112. The active layer 113 contains the first organic compound The light-emitting layer 193 has a second organic compound that is different from the first organic compound.

[0105] The common layer 114 is located on the common layer 112, the active layer 113, and the light-emitting layer 193. The common layer 114 is a layer used in common by the light-receiving element 110 and the light-emitting element 190.

[0106] The common electrode 115 transmits pixel electricity via the common layer 112, the active layer 113, and the common layer 114. It has a portion that overlaps with pole 111. Also, the common electrode 115 has a common layer 112 and a light-emitting layer 193. , and has a portion that overlaps with the pixel electrode 191 via the common layer 114. The common electrode 115 is This layer is used in common by the light-receiving element 110 and the light-emitting element 190.

[0107] In the display device of this embodiment, an organic compound is used in the active layer 113 of the light-receiving element 110. The light-receiving element 110 has layers other than the active layer 113 that share the same configuration as the light-emitting element 190 (EL element). This can be done. Therefore, in the manufacturing process of the light-emitting element 190, the active layer 113 is formed. By simply adding a process, the light-receiving element 110 can be formed in parallel with the formation of the light-emitting element 190. This is possible. Furthermore, the light-emitting element 190 and the light-receiving element 110 can be formed on the same substrate. Therefore, the light-receiving element 110 can be incorporated into the display device without significantly increasing the manufacturing process. It is possible.

[0108] In the display device 10A, the active layer 113 of the light-receiving element 110 and the light-emitting layer 19 of the light-emitting element 190 This example shows a common configuration for the light-receiving element 110 and the light-emitting element 190, except for the differences in how they are created. However, the configuration of the light-receiving element 110 and the light-emitting element 190 is not limited thereto. 10 and the light-emitting element 190 have layers that differentiate each other, in addition to the active layer 113 and the light-emitting layer 193. It may have (see display devices 10D, 10E, and 10F described later). The light receiving element 110 and It is preferable that the light-emitting element 190 has one or more layers that are used in common (common layers). This allows the light-receiving element 110 to be incorporated into the display device without significantly increasing the manufacturing process. It is possible.

[0109] The display device 10A has a light-receiving element 110 between a pair of substrates (substrate 151 and substrate 152). It includes a light-emitting element 190, a transistor 41, and a transistor 42, etc.

[0110] Furthermore, the display device 10A has a light guide plate 121 located outside the substrate 152. An infrared light-emitting element 122 is positioned at the end of element 21.

[0111] In the light-receiving element 110, the following are located between the pixel electrode 111 and the common electrode 115, respectively. The common layer 112, the active layer 113, and the common layer 114 are organic layers (layers containing organic compounds). It is also possible to do so. The pixel electrode 111 preferably has the function of reflecting visible light and infrared light. The ends of the pixel electrodes 111 are covered by partitions 216. The common electrode 115 is visible. It has the ability to transmit light and infrared light.

[0112] The light-receiving element 110 has the function of detecting light. Specifically, the light-receiving element 110 is a light guide This is a photoelectric conversion element that receives light 22 incident from the plate 121 and converts it into an electrical signal.

[0113] A light-shielding layer BM is provided on the surface of substrate 152 that faces substrate 151. The light-shielding layer BM is It has openings in positions that overlap with the optical element 110 and in positions that overlap with the light-emitting element 190. Light-shielding layer BM By providing this, the range in which the light-receiving element 110 detects light can be controlled.

[0114] As the light-shielding layer BM, a material that blocks light emission from the light-emitting element can be used. M preferably absorbs visible light. The light-shielding layer BM can be, for example, a metal material, or Using resin materials containing pigments (such as carbon black) or dyes, a black matrix is ​​created. It can form a shading layer BM is a red color filter, a green color filter It may also be a stacked structure of a blue color filter.

[0115] Here, the light-receiving element 110 detects the light scattered on the surface of the light guide plate 121. However, The light emitted from the light-emitting element 190 is reflected within the display device 10A and received without passing through the light guide plate 121, etc. In some cases, stray light may be incident on the optical element 110. The light-shielding layer BM suppresses the effects of such stray light. It can be controlled. For example, if the light-shielding layer BM is not provided, the light-emitting element 190 will The light 23a is reflected by the substrate 152, and the reflected light 23b is incident on the light receiving element 110. There is a light-shielding layer BM that prevents reflected light 23b from entering the photodetector 110. This allows for control. This reduces noise and improves the sensitivity of the sensor using the light-receiving element 110. It is possible.

[0116] In the light-emitting element 190, the following are located between the pixel electrode 191 and the common electrode 115, respectively The common layer 112, the light-emitting layer 193, and the common layer 114 can also be called the EL layer. The electrode 191 preferably has the function of reflecting visible light and infrared light. The ends are covered by partition walls 216. Pixel electrode 111 and pixel electrode 191 are separated by partition walls 216. They are electrically insulated from each other by 6. The common electrode 115 transmits visible light and infrared light. It has the function of [doing something].

[0117] The light-emitting element 190 has the function of emitting visible light. Specifically, the light-emitting element 190 has the function of emitting visible light. By applying a voltage between the elemental electrode 191 and the common electrode 115, light 21 is directed towards the substrate 152. It is an electroluminescent device that emits light.

[0118] The light-emitting layer 193 is preferably formed so as not to overlap with the light-receiving area of ​​the light-receiving element 110. This suppresses the absorption of light 22 by the light-emitting layer 193, and allows the light-receiving element 110 to absorb light. The amount of light emitted can be increased.

[0119] The pixel electrode 111 is connected to the transistor 41 through an opening provided in the insulating layer 214. It is electrically connected to the source or drain. The end of the pixel electrode 111 is connected to the partition wall 216. Therefore, it is covered.

[0120] The pixel electrode 191 is connected to the transistor 42 through an opening provided in the insulating layer 214. It is electrically connected to the source or drain. The end of the pixel electrode 191 is connected to the partition wall 216. Therefore, it is covered. Transistor 42 has the function of controlling the drive of the light-emitting element 190. ru.

[0121] Transistors 41 and 42 are located on the same layer (substrate 151 in Figure 4A). They are doing it.

[0122] At least a portion of the circuit electrically connected to the light-receiving element 110 is electrically connected to the light-emitting element 190. It is preferable that the circuits to be connected are formed using the same materials and processes. Therefore, compared to forming the two circuits separately, the thickness of the display device can be reduced. Furthermore, the manufacturing process can be simplified.

[0123] The light-receiving element 110 and the light-emitting element 190 are each covered with a protective layer 195. Preferred. In Figure 4A, the protective layer 195 is provided in contact with the common electrode 115. By providing the protective layer 195, impurities such as water can enter the light-receiving element 110 and the light-emitting element 190. This suppresses congestion and improves the reliability of the light-receiving element 110 and the light-emitting element 190. Furthermore, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142.

[0124] Furthermore, as shown in Figure 5A, a protective layer is provided on the light-receiving element 110 and the light-emitting element 190. It is not necessary. In Figure 5A, the common electrode 115 and the substrate 152 are connected by the adhesive layer 142. They are glued together.

[0125] Furthermore, as shown in Figure 5B, a configuration without a light-shielding layer BM is also possible. Since the light-receiving area of ​​the optical element 110 can be increased, the sensitivity of the sensor can be further improved.

[0126] [Configuration Example 3-2] Figure 4B shows a cross-sectional view of the display device 10B. Note that in the following description of the display device, first For configurations similar to those described for the display device, the explanation may be omitted.

[0127] The display device 10B shown in Figure 4B has a lens 149 in addition to the configuration of the display device 10A. .

[0128] The lens 149 is positioned to overlap with the light-receiving element 110. Lens 149 is provided in contact with the substrate 152. Lens 1 of the display device 10B 49 is a convex lens having a convex surface on the substrate 151 side. The convex lens may be placed in a region that overlaps with the light-receiving element 110.

[0129] When both the light-shielding layer BM and the lens 149 are formed on the same surface of the substrate 152, the formation order is It is not a question. Figure 4B shows an example where the lens 149 is formed first, but the light-shielding layer BM is formed first. This is also acceptable. In Figure 4B, the end of lens 149 is covered by the light-shielding layer BM.

[0130] The display device 10B is configured such that light 22 is incident on the light-receiving element 110 via the lens 149. Having lens 149 results in a difference in the light-receiving element 110 compared to the case without lens 149. This allows for a narrower imaging range, suppressing overlap between the imaging range of adjacent photodetectors 110. Yes, it is possible. This allows for the capture of clear images with less blurring. Also, the light-receiving element 110 If the imaging range is the same, having lens 149 is better than not having lens 149 , pinhole size (corresponding to the size of the aperture BM that overlaps with the photodetector 110 in Figure 4B) The (blank) can be made larger. Therefore, by having the lens 149, the light-receiving element 1 The amount of light incident on 10 can be increased.

[0131] The method for forming the lens used in the display device of this embodiment is on a substrate or on a light-receiving element. Microlenses or other lenses may be directly formed on them, or separately manufactured microlenses Lens arrays, such as arrays, may be attached to a substrate.

[0132] [Configuration Example 3-3] Figure 4C shows a schematic cross-sectional view of the display device 10C. The display device 10C consists of a substrate 151, a substrate 152 and without partition wall 216, substrate 153, substrate 154, adhesive layer 155, insulating layer 21 2. It differs from the display device 10A in that it has a partition wall 217.

[0133] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The protective layer 195 is bonded to the adhesive layer 142.

[0134] The display device 10C includes an insulating layer 212 formed on the fabricated substrate, a transistor 41, and a transistor. By transferring the zista 42, light-receiving element 110, and light-emitting element 190, etc., onto the substrate 153 This is the configuration to be manufactured. Substrates 153 and 154 are each made to be flexible. This is preferable. This makes it possible to increase the flexibility of the display device 10C. For example, substrate 1 It is preferable to use resin for both 53 and the substrate 154.

[0135] Substrates 153 and 154 are made of polyethylene terephthalate (PET), respectively. ), polyester resins such as polyethylene naphthalate (PEN), polyacrylonitrile Resins, acrylic resins, polyimide resins, polymethyl methacrylate resins, polycarbonates PC resin, polyethersulfone (PES) resin, polyamide resin (nylon, ethersulfone) Lamids, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide Doimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, poly Propylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose Nanofibers, etc., can be used. Either or both of substrates 153 and 154. Glass of a thickness sufficient to be flexible may be used.

[0136] The substrate of the display device in this embodiment may be a film with high optical isotropy. Films with high optical isotropy include triacetylcellulose (TAC, cellulose). Also called riacetate film, cycloolefin polymer (COP) film, cyclo Examples include olefin copolymer (COC) films and acrylic films.

[0137] The partition wall 217 preferably absorbs the light emitted by the light-emitting element. Examples of partition wall 217 include... For example, a black matrix can be formed using a resin material containing a pigment or dye. Yes, it is possible. Furthermore, by using a brown resist material, the partition wall 217 can be formed with a colored insulating layer. It is possible.

[0138] The light 23c emitted by the light-emitting element 190 is reflected by the substrate 152 and the partition wall 217, and the reflected light 2 3d may be incident on the light-receiving element 110. Also, light 23c may pass through the partition wall 217. The reflected light is reflected by a transistor or wiring, etc., and the reflected light is incident on the photodetector 110. Yes. The light 23c is absorbed by the partition wall 217, and the reflected light 23d is received by the light receiving element 110. This can suppress the incident light from entering the light. This reduces noise and allows the use of the photodetector 110. It can increase the sensitivity of the sensor.

[0139] The partition wall 217 preferably absorbs at least the wavelength of the light detected by the light receiving element 110. For example, when the light receiving element 110 detects the red light emitted by the light emitting element 190, the partition wall 217 preferably absorbs at least red light. For example, if the partition wall 217 has a blue color filter, it can absorb the red light 23c and suppress the reflected light 23d from entering the light receiving element 110.

[0140] 〔Configuration Example 3-4〕 In the above, an example in which the light emitting element and the light receiving element have two common layers has been shown, but the present invention is not limited to this. Hereinafter, examples in which the configuration of the common layer is different will be described.

[0141] FIG. 6A shows a schematic cross-sectional view of the display device 10D. The display device 10D is different from the display device 10A in that it does not have a common layer 114 and has a buffer layer 184 and a buffer layer 194. The buffer layer 184 and the buffer layer 194 may each have a single-layer structure or a laminated structure. In the display device 10D, the light receiving element 110 has a pixel electrode 111, a common layer 112, an active layer 113, a buffer layer 184, and a common electrode 115. Also, in the display device 10D,

[0142] the light emitting element 190 has a pixel electrode 191, a common layer 112, a light emitting layer 193, a buffer layer 19 4, and a common electrode 115. In the display device 10D, an example in which the buffer layer 184 between the common electrode 115 and the active layer 113 and the buffer layer 194 between the common electrode 115 and the light emitting layer 193 are separately formed is shown. As the buffer layer 184 and the buffer layer 194, for example, one of an electron injection layer and an electron transport layer

[0143] In the display device 10D, an example of separately forming the buffer layer 184 between the common electrode 115 and the active layer 113 and the buffer layer 194 between the common electrode 115 and the light emitting layer 193 is shown. As the buffer layer 184 and the buffer layer 194, for example, one of an electron injection layer and an electron transport layer or both can be used. or both can be formed.

[0144] Fig. 6B shows a schematic cross-sectional view of the display device 10E. The display device 10E is different from the display device 10A in that it does not have the common layer 112 and has the buffer layer 182 and the buffer layer 192. but has the buffer layers 182 and 192. Each of the buffer layer 182 and the buffer layer 192 may have a single-layer structure or a stacked structure.

[0145] In the display device 10E, the light-receiving element 110 has the pixel electrode 111, the buffer layer 182, the active layer 113, the common layer 114, and the common electrode 115. Also, in the display device 10E, the light-emitting element 190 has the pixel electrode 191, the buffer layer 192, the light-emitting layer 193, the common layer 114, and the common electrode 115.

[0146] In the display device 10E, an example of separately forming the buffer layer 182 between the pixel electrode 111 and the active layer 113 and the buffer layer 192 between the pixel electrode 191 and the light-emitting layer 193 is shown. As the buffer layer 182 and the buffer layer 192, for example, one or both of a hole injection layer and a hole transport layer can be formed. or both can be formed.

[0147] Fig. 6C shows a schematic cross-sectional view of the display device 10F. The display device 10F is different from the display device 10A in that it does not have the common layer 112 and the common layer 114 and has the buffer layer 182, the buffer layer 184, the buffer layer 192, and the buffer layer 194.

[0148] In the display device 10F, the light-receiving element 110 has the pixel electrode 111, the buffer layer 182, the active layer 113, the buffer layer 184, and the common electrode 115. Also, in the display device 10F, ​​​​​​​​​In this configuration, the light-emitting element 190 consists of a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, and a buffer It has a layer 194 and a common electrode 115.

[0149] In fabricating the light-receiving element 110 and the light-emitting element 190, the active layer 113 and the light-emitting layer 193 are created. Not only can you separate layers, but you can also create and differentiate other layers.

[0150] In the display device 10F, a pair of electrodes (pixel electrode 1) are formed by the light-receiving element 110 and the light-emitting element 190. An example is shown where there is no common layer between (11 or pixel electrode 191 and common electrode 115). The light-receiving element 110 and light-emitting element 190 of the device 10F have pixel electrodes 1 on the insulating layer 214. 11 and the pixel electrode 191 are formed using the same material and the same process, and a batch is placed on the pixel electrode 111. The buffer layer 182, active layer 113, and buffer layer 184 are placed on the pixel electrode 191. After forming 192, the light-emitting layer 193, and the buffer layer 194, the buffer layer 1 This can be fabricated by forming a common electrode 115 so as to cover 84 and the buffer layer 194, etc.

[0151] Furthermore, the stacked structure of buffer layer 182, active layer 113, and buffer layer 184, and buff The order in which the laminated structure of the a-layer 192, the light-emitting layer 193, and the buffer layer 194 is fabricated is not particularly limited. For example, after forming the buffer layer 182, the active layer 113, and the buffer layer 184, A buffer layer 192, an emissive layer 193, and a buffer layer 194 may be fabricated. Conversely, Before forming the film layers 182, 113, and 184, the buffer layer 192 A light-emitting layer 193 and a buffer layer 194 may be fabricated. Alternatively, a buffer layer 182 and a buffer layer may be fabricated. The film may be deposited alternately in the order of buffer layer 192, active layer 113, light-emitting layer 193, and so on.

[0152] [Configuration Example 4 of Display Device] Hereinafter, a more specific configuration example of the display device according to an aspect of the present invention will be described.

[0153] [Configuration Example 4-1] FIG. 7 shows a perspective view of the display device 100A.

[0154] The display device 100A has a configuration in which a substrate 151 and a substrate 152 are bonded together. Also, a light guide plate 121 is provided on the substrate 152. In FIG. 7, the substrate 152 and the light guide plate 121 are shown by dashed lines.

[0155] The display device 100A includes a display unit 162, a circuit 164, a wiring 165, etc. In FIG. 7, an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on the display device 100A is shown here. Therefore, the configuration shown in FIG. 7 can also be referred to as a display module having the display device 100A, the IC, and the FPC.

[0156] As the circuit 164, a scanning line driving circuit can be used.

[0157] The wiring 165 has a function of supplying signals and power to the display unit 162 and the circuit 164. The signals and power are input from the outside via the FPC 172, or are input to the wiring 165 from the IC 173 or the like.

[0158] In FIG. 7, an example in which the IC 173 is provided on the substrate 151 by a COG (Chip On Glass) method or a COF (Chip On Film) method or the like is shown. The IC 173 can be an IC having, for example, a scanning line driving circuit and a signal line driving circuit, etc. Note that , the display device 100A and the display module may have a configuration without providing an IC. Also, I C may be implemented on the FPC using the COF method or similar.

[0159] Figure 8 shows a portion of the region including the FPC 172 of the display device 100A shown in Figure 7, and circuit 16. A portion of the area including 4, a portion of the area including the display unit 162, and a portion of the area including the end portion An example of the cross-section when each section is cut is shown.

[0160] The display device 100A shown in Figure 8 has a transistor 201 between substrate 151 and substrate 152. It includes transistor 205, transistor 206, light-emitting element 190, light-receiving element 110, etc. Furthermore, a light guide plate 121 is provided on the substrate 152. At the end of the light guide plate 121, An optical element 122 is provided.

[0161] The substrate 152 and the insulating layer 214 are bonded together via the adhesive layer 142. The light-emitting element 190 and For sealing the light-receiving element 110, a solid sealing structure or a hollow sealing structure can be applied. (Figure 8) Then, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is an inert gas It is filled with ions (such as nitrogen or argon), and a hollow sealing structure is applied. Adhesive layer 1 42 may be provided in overlap with the light-emitting element 190. Also, the substrate 152, adhesive layer 14 2. The space 143 surrounded by the insulating layer 214 is filled with a resin different from the adhesive layer 142. That's good too.

[0162] The light-emitting element 190 consists of a pixel electrode 191, a common layer 112, and a light-emitting layer 193, from the insulating layer 214 side. It has a stacked structure in which a common layer 114 and a common electrode 115 are stacked in that order. Pixel electrode 19 1 is connected to the conductive layer 22 of the transistor 206 through an opening provided in the insulating layer 214. It is connected to 2b. Transistor 206 has the function of controlling the drive of the light-emitting element 190. It has. The end of the pixel electrode 191 is covered by a partition wall 216. The pixel electrode 191 is The material includes a material that reflects visible light and infrared light, and the common electrode 115 transmits visible light and infrared light. Includes materials.

[0163] The light-receiving element 110 consists of a pixel electrode 111, a common layer 112, and an active layer 113, from the insulating layer 214 side. It has a stacked structure in which a common layer 114 and a common electrode 115 are stacked in that order. Pixel electrode 11 1 is connected to the conductive layer 22 of the transistor 205 through an opening provided in the insulating layer 214. It is electrically connected to 2b. The end of the pixel electrode 111 is covered by the partition wall 216. The pixel electrode 111 contains a material that reflects visible light and infrared light, and the common electrode 115 is visible Includes materials that transmit light and infrared light.

[0164] The light emitted by the light-emitting element 190 is emitted towards the substrate 152. In addition, the light-receiving element 110 Light is incident on the substrate 152 through the space 143. Visible light and infrared light are incident on the substrate 152. It is preferable to use a material with high light transmittance.

[0165] Pixel electrodes 111 and 191 can be manufactured using the same material and the same process. The common layer 112, common layer 114, and common electrode 115 are connected to the light-receiving element 110 and the light-emitting element 1 It is used in both with 90. The light-receiving element 110 and the light-emitting element 190 are the active layer 113 and light-emitting element 190. Except for the different configuration of layer 193, all other components can be the same. The light-receiving element 110 can be incorporated into the display device 100A without significantly increasing the length. .

[0166] A light-shielding layer BM is provided on the surface of substrate 152 that faces substrate 151. The light-shielding layer BM is It has openings in positions that overlap with the optical element 110 and in positions that overlap with the light-emitting element 190. Light-shielding layer BM By providing this, the range in which the light-receiving element 110 detects light can be controlled. By having a light layer BM, light is directly incident from the light-emitting element 190 to the light-receiving element 110. It can be suppressed. Therefore, it is possible to realize a sensor with low noise and high sensitivity.

[0167] Transistors 201, 205, and 206 are all located on the circuit board. These transistors are formed on 151. These transistors are made from the same materials and using the same process. It can be manufactured.

[0168] On the substrate 151 are insulating layers 211, 213, 215, and 214. They are arranged in this order. The insulating layer 211 has a portion that is connected to the gate insulating layer of each transistor. It functions as such. The insulating layer 213, a portion of which functions as the gate insulating layer of each transistor. The insulating layer 215 is provided covering the transistor. The insulating layer 214 is provided covering the transistor. It is provided covering the gate and has the function of a planarization layer. The number of insulating layers covering the zista is not limited; each layer may be a single layer or two or more layers. .

[0169] At least one layer of the insulating layer covering the transistor is designed to prevent the diffusion of impurities such as water and hydrogen. It is preferable to use a material. This allows the insulating layer to function as a barrier layer. This configuration effectively prevents impurities from diffusing into the transistor from the outside. This effectively suppresses the problem and improves the reliability of the display device.

[0170] Insulating layers 211, 213, and 215 are each made of inorganic insulating films. It is preferable that it be present. Examples of inorganic insulating films include silicon nitride films and silicon oxide nitride films. Films, silicon oxide films, silicon nitride films, aluminum oxide films, aluminum nitride films, etc. Any inorganic insulating film can be used. Also, hafnium oxide film, yttrium oxide film, Zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, ranyl oxide Tan film, cerium oxide film, neodymium oxide film, etc. may also be used. Two or more layers may be used.

[0171] Here, organic insulating films often have lower barrier properties compared to inorganic insulating films. Therefore, The insulating film preferably has an opening near the end of the display device 100A. The ability to suppress the diffusion of impurities from the edges of the display device 100A through the organic insulating film is Yes, it is possible. Alternatively, the edges of the organic insulating film may be positioned inward from the edges of the display device 100A. Even if an organic insulating film is formed and the organic insulating film is not exposed at the edges of the display device 100A good.

[0172] An organic insulating film is preferred for the insulating layer 214, which functions as a planarizing layer. The materials that can be used include acrylic resin, polyimide resin, epoxy resin, poly Mido resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, pheno Examples include resins and precursors of these resins.

[0173] In the region 228 shown in Figure 8, an opening is formed in the insulating layer 214. This provides insulation Even when an organic insulating film is used for layer 214, the display unit 1 can be accessed from the outside via the insulating layer 214. This suppresses the diffusion of impurities into 62. Therefore, the reliability of the display device 100A is improved. It is possible to do so.

[0174] Transistors 201, 205, and 206 are gates. Functional conductive layer 221, insulating layer 211 acting as gate insulating layer, source and drain The conductive layers 222a and 222b, the semiconductor layer 231, and the gate insulating layer function as conductive layers 222a and 222b. It has an insulating layer 213 that functions as a gate, and a conductive layer 223 that functions as a gate. This involves applying the same hatching pattern to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is It is located between the conductive layer 223 and the semiconductor layer 231.

[0175] The structure of the transistors in the display device of this embodiment is not particularly limited. For example, Using Lehner-type transistors, staggered transistors, inverse staggered transistors, etc. It is possible to use either a top-gate or bottom-gate transistor structure. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed. That's fine.

[0176] Transistors 201, 205, and 206 have channels A configuration is applied in which the semiconductor layer to be formed is sandwiched between two gates. The transistors may then be driven by supplying them with the same signal. Of the two gates, one is given a potential to control the threshold voltage, and the other is used for driving. The threshold voltage of the transistor may be controlled by applying a potential.

[0177] The crystallinity of semiconductor materials used in transistors is not particularly limited; amorphous semiconductors are also available. Single-crystal semiconductors, or semiconductors with crystalline properties other than single crystals (microcrystalline semiconductors, polycrystalline semiconductors) Either a single-crystal semiconductor or a semiconductor having a crystalline region in part may be used. Using a crystalline semiconductor is preferable because it suppresses the degradation of transistor characteristics.

[0178] The semiconductor layer of a transistor preferably contains a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may have silicon. For example, amorphous silicon, crystalline silicon (low-temperature polysilicon, single-crystal silicon) Examples include:

[0179] The semiconductor layer is, for example, made of indium and M (where M is gallium, aluminum, silicon). Boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, gelatin Lumanium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium, (One or more selected from tantalum, tungsten, and magnesium), and zinc It is preferable that it has, in particular M is aluminum, gallium, yttrium, and It is preferable that the material be one or more species selected from tin.

[0180] In particular, indium (In), gallium (Ga), and zinc (Zn) are used as semiconductor layers. It is preferable to use an oxide containing IGZO.

[0181] When the semiconductor layer is In-M-Zn oxide, the In-M-Zn oxide film is used to form the film. For sputtering targets, it is preferable that the atomic ratio of In to M is 1 or greater. i. As an atomic ratio of metal elements in such a sputtering target, In:M:Zn =1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=2:1:3, In: M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1 , In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5:1 Examples include :8, In:M:Zn=6:1:6, In:M:Zn=5:2:5, etc.

[0182] When using a target containing a polycrystalline oxide as a sputtering target, This is preferable because it facilitates the formation of a semiconductor layer having crystalline properties. The atom ratio is the positive or negative ratio of the atomic number of metal elements contained in the sputtering target described above. This includes a 40% variation. For example, the composition of the sputtering target used for the semiconductor layer is In the case of In:Ga:Zn = 4:2:4.1 [atomic ratio], the composition of the semiconductor layer to be deposited is: In some cases, the ratio of In:Ga:Zn may be in the vicinity of 4:2:3 [atomic ratio].

[0183] Note that when the atomic ratio is stated as In:Ga:Zn=4:2:3 or close to it, In When the atomic ratio of is set to 4, the atomic ratio of Ga is between 1 and 3, and the atomic ratio of Zn is 2 This includes cases where the number of atoms is 4 or less. Also, the atomic ratio is In:Ga:Zn=5:1:6 or When describing it as being in the vicinity of [a certain location], if the atomic ratio of In is 5, then the atomic ratio of Ga is 0. This includes cases where the value is greater than 1 and less than or equal to 2, and the atomic ratio of Zn is between 5 and 7. When describing the ratio of particles as In:Ga:Zn = 1:1:1 or close to it, the original value of In When the atom ratio is set to 1, the atom ratio of Ga is greater than 0.1 and less than or equal to 2, and the atoms of Zn This includes cases where the numerical ratio is greater than 0.1 and less than or equal to 2.

[0184] The transistors in circuit 164 and the transistors in display unit 162 have the same structure. It may be, or it may be a different structure. The multiple transistors in circuit 164 The structure may be the same for all, or there may be two or more types. Similarly, the display unit 162 may The structures of the multiple transistors may all be the same, or there may be two or more different structures.

[0185] A connection portion 204 is provided in the area of ​​substrate 151 where substrate 152 does not overlap. In the connecting section 204, the wiring 165 is connected to the FPC 172 via the conductive layer 166 and the connecting layer 242. They are electrically connected. The upper surface of the connection part 204 is made of the same conductive film as the pixel electrode 191. The conductive layer 166 obtained is exposed. This allows the connection part 204 and the FPC 172 to be It can be electrically connected via the connecting layer 242.

[0186] Various optical components are arranged between the substrate 152 and the light guide plate 121, or on the outside of the light guide plate 121. This is possible. Optical components include polarizing plates, phase difference plates, and light diffusion layers (such as diffusion films). Examples include an anti-reflective layer and a light-gathering film. Also, on the outside of the substrate 152, dust can be removed. An antistatic coating to suppress adhesion, a water-repellent coating to make it difficult for dirt to adhere, and protection against scratches that occur during use. A hard coat film to suppress light, an impact absorbing layer, etc. may be placed in contact with the light guide plate 121. When highly light-diffusing materials are placed, infrared light diffusing within the light guide plate 121 at these interfaces is also scattered. Because these elements can be disrupted, it is preferable to insert a component with low light diffusivity between them.

[0187] Substrates 151 and 152 are made of glass, quartz, ceramic, sapphire, and Resins and the like can be used. Flexible materials can be used for substrates 151 and 152. This increases the flexibility of the display device.

[0188] The adhesive layer can be a photocuring adhesive such as an UV-curing type, a reaction-curing adhesive, or a thermosetting adhesive. Various types of curing adhesives, such as anaerobic adhesives, can be used. Epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imi Plastic resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, E Examples include VA (ethylene vinyl acetate) resin. In particular, the moisture permeability of epoxy resins, etc. Materials with low properties are preferred. A two-part resin mixture may also be used. Furthermore, adhesive sheets, etc. You may use it.

[0189] The connecting layer 242 is an anisotropic conductive film (ACF: Anisotropic Co Anisotropic conductive paste (ACP) You can use methods such as Conductive Paste.

[0190] The light-emitting element 190 is a top-emission type, bottom-emission type, dual-emission type There are various types, such as the yon type. The electrode that extracts light uses a conductive film that transmits visible light. It is preferable to use a conductive film that reflects visible light on the electrode that does not extract light.

[0191] The light-emitting element 190 has at least a light-emitting layer 193. Other layers include materials with high hole injection potential, materials with high hole transport potential, hole blocking materials, and electrical components. Substances with high electron transport properties, substances with high electron injection properties, or bipolar substances (electron transport properties and It may further have layers containing substances with high hole transport properties, etc. For example, common layer 112 It is preferable that the layer has one or both of a hole injection layer and a hole transport layer. For example, a common layer 114 preferably has one or both of an electron transport layer and an electron injection layer.

[0192] The common layer 112, the light-emitting layer 193, and the common layer 114 contain low molecular weight compounds and polymer compounds. Any of the materials can be used, and may include inorganic compounds. Common layer 112, light-emitting layer Layers 193 and the common layer 114 are each deposited by a vapor deposition method (including vacuum deposition method) and a transition method. It can be formed by methods such as drawing, printing, inkjet, and coating.

[0193] The light-emitting layer 193 may have an inorganic compound such as quantum dots as a light-emitting material.

[0194] The active layer 113 of the photodetector 110 contains a semiconductor. This semiconductor may be silicon, for example. Examples include inorganic semiconductors and organic semiconductors containing organic compounds. In this embodiment, active This section shows an example of using an organic semiconductor as the semiconductor material for the layer. By using an organic semiconductor, The light-emitting layer 193 of the light-emitting element 190 and the active layer 113 of the light-receiving element 110 are connected in the same way (for example) It is preferable because it can be formed by vacuum deposition and the manufacturing equipment can be standardized.

[0195] The n-type semiconductor material of the active layer 113 is fullerene (for example, C 60 , C 70 Examples include electron-accepting organic semiconductor materials such as (etc.) or derivatives thereof. Also, the active layer 11 The p-type semiconductor material possessed by 3 is copper(II) phthalocyanine (Copper(II) ) phthalocyanine; CuPc) and tetraphenyldibenzoperifuran (Tetraphenyldibenzoperiflanthene; DBP), Electron-donating lead phthalocyanine (zinc phthalocyanine; ZnPc), etc. Examples include organic semiconductor materials.

[0196] For example, the active layer 113 is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. It's nice.

[0197] In addition to the gate, source, and drain of a transistor, various wirings that constitute a display device and Materials that can be used for conductive layers such as electrodes include aluminum, titanium, and chromium. Nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten Examples include metals such as tungsten, and alloys in which such metals are the main component. A film containing this material can be used as a single layer or as a multilayer structure.

[0198] Furthermore, examples of conductive materials that are translucent include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides or graphites such as zinc oxide, zinc oxide, and zinc oxide containing gallium You can use silver, platinum, magnesium, nickel, or tungsten. Metal materials such as tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium. Alternatively, an alloy material containing the metal material can be used. Or, a nitride of the metal material (e.g.) For example, titanium nitride may be used. When using a chemical, it is preferable to make it thin enough to be translucent. A laminated film of materials can be used as a conductive layer. For example, an alloy of silver and magnesium and an ink Using a multilayer film of tungsten oxide is preferable because it can improve conductivity. These include conductive layers such as various wirings and electrodes that constitute the display device, and conductive elements of the display element. It can also be used for layers (conductive layers that function as pixel electrodes or common electrodes).

[0199] Examples of insulating materials that can be used for each insulating layer include acrylic resin and epoxy resin. Resins such as fats, silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, acid Examples include inorganic insulating materials such as aluminum oxide.

[0200] [Configuration Example 4-2] Figure 9A shows a cross-sectional view of the display device 100B. The display device 100B includes a lens 149 and It differs from the display device 100A mainly in that it has a protective layer 195.

[0201] By providing a protective layer 195 that covers the light-receiving element 110 and the light-emitting element 190, the light-receiving element 11 This suppresses the diffusion of impurities such as water into the 0 and light-emitting element 190, and the light-receiving element 110 and the light-emitting element 190. This can improve the reliability of the optical element 190.

[0202] In the region 228 near the end of the display device 100B, through the opening of the insulating layer 214, It is preferable that the edge layer 215 and the protective layer 195 are in contact with each other. In particular, the insulating layer 215 has It is preferable that the inorganic insulating film and the inorganic insulating film of the protective layer 195 are in contact with each other. This suppresses the diffusion of impurities from the outside to the display unit 162 via the organic insulating film. This is possible. Therefore, the reliability of the display device 100B can be improved.

[0203] Figure 9B shows an example where the protective layer 195 has a three-layer structure. In Figure 9B, the protective layer 195 is , an inorganic insulating layer 195a on the common electrode 115, and an organic insulating layer 195 on the inorganic insulating layer 195a It has b and an inorganic insulating layer 195c on the organic insulating layer 195b.

[0204] The edges of the inorganic insulating layer 195a and the edges of the inorganic insulating layer 195c are connected to the edges of the organic insulating layer 195b. It extends outward from the other and is in contact with each other. And the inorganic insulating layer 195a is in contact with the insulating layer 214 The insulating layer 215 (inorganic insulating layer) comes into contact with the insulating layer 215 (inorganic insulating layer) through an opening in the (organic insulating layer). This provides insulation The edge layer 215 and the protective layer 195 can surround the light-receiving element 110 and the light-emitting element 190. Therefore, the reliability of the light-receiving element 110 and the light-emitting element 190 can be improved.

[0205] Thus, the protective layer 195 may have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, it is preferable that the end of the inorganic insulating film extends outward more than the end of the organic insulating film. .

[0206] A lens 149 is provided on the side of the substrate 152 that faces the substrate 151. The lens 149 is The substrate 151 side has a convex surface. The light-receiving area of ​​the light-receiving element 110 overlaps with the lens 149, Furthermore, it is preferable that it does not overlap with the light-emitting layer 193. This allows the light-receiving element 110 to be used. This can improve the sensitivity and accuracy of the sensor.

[0207] The lens 149 preferably has a refractive index of 1.3 or more and 2.5 or less for infrared light. The lens 149 can be formed using at least one of an inorganic material and an organic material. For example, materials containing resin can be used for the lens 149. Also, oxides and sulfur A material containing at least one of the monoxides can be used for the lens 149.

[0208] Specifically, resins containing chlorine, bromine, or iodine, resins containing heavy metal atoms, and aromatic rings Resins containing sulfur, etc., can be used in lens 149. Alternatively, resins and A material containing nanoparticles of a material with a higher refractive index than the resin can be used in the lens 149. Titanium dioxide or zirconium oxide can be used as nanoparticles.

[0209] Also, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide Acids containing tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, indium and tin. The lens 149 is made of an oxide containing indium, gallium, and zinc, or a similar material. This can be done. Alternatively, zinc sulfide or the like can be used in lens 149.

[0210] In addition, in the display device 100B, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142. The adhesive layer 142 is superimposed on the light-receiving element 110 and the light-emitting element 190, respectively. The display device 100B is provided with a solid encapsulation structure.

[0211] [Configuration Example 4-3] Figure 10A shows a cross-sectional view of the display device 100C. The display device 100C is a transistor In terms of structural differences and the absence of the light-shielding layer BM and lens 149, it is mainly compared to the display device 100B. They are different.

[0212] The display device 100C has transistors 208, 209, and on the substrate 151. It has a transistor 210.

[0213] Transistors 208, 209, and 210 are gates. Functional conductive layer 221, insulating layer 211 functioning as a gate insulating layer, channel forming region 2 A semiconductor layer having 31i and a pair of low-resistance regions 231n, one of the pair of low-resistance regions 231n A conductive layer 222a connects to one side, and a conductive layer 222 connects to the other side of the pair of low-resistance regions 231n. b. An insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and Furthermore, it has an insulating layer 215 that covers the conductive layer 223. The insulating layer 211 is connected to the conductive layer 221. It is located between the flannel-forming region 231i and the insulating layer 225, which forms a channel with the conductive layer 223. It is located between region 231i and the region 231i.

[0214] The conductive layer 222a and the conductive layer 222b are provided on the insulating layer 225 and the insulating layer 215, respectively. The conductive layer 222a and conductive layer 22 are connected to the low-resistance region 231n through the cut-out opening. Of the two components (2b), one functions as the source and the other as the drain.

[0215] The pixel electrode 191 of the light-emitting element 190 is connected to the transistor 208 via the conductive layer 222b. It is electrically connected to one of the pair of low-resistance regions 231n.

[0216] The pixel electrode 111 of the light-receiving element 110 is connected to the transistor 209 via the conductive layer 222b. It is electrically connected to the other of the pair's low-resistance region 231n.

[0217] Figure 10A shows an example in which the insulating layer 225 covers the top and sides of the semiconductor layer. On the other hand, In Figure 10B, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231. This shows an example where the low-resistance region 231n does not overlap. For example, the conductive layer 223 is used as a mask. By processing the insulating layer 225 using this method, the structure shown in Figure 10B can be fabricated. An insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and the opening of the insulating layer 215 Through the opening, conductive layer 222a and conductive layer 222b are connected to the low-resistance region 231n, respectively. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0218] [Configuration Example 4-4] Figure 11 shows a cross-sectional view of the display device 100D. The display device 100D has a different substrate configuration. In this respect, it differs primarily from the display device 100C.

[0219] The display device 100D does not have substrates 151 and 152, but has substrates 153, 154, It has an adhesive layer 155 and an insulating layer 212.

[0220] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The protective layer 195 is bonded to the adhesive layer 142.

[0221] The display device 100D includes an insulating layer 212 formed on the fabricated substrate, a transistor 208, and The transistor 209, light-receiving element 110, and light-emitting element 190, etc., are transferred onto the substrate 153. This configuration is manufactured by the following: Substrate 153 and Substrate 154 each have flexibility. This is preferable. This makes it possible to increase the flexibility of the display device 100D.

[0222] The insulating layer 212 can be used in insulating layer 211, insulating layer 213, and insulating layer 215. An inorganic insulating film can be used as the insulating layer 212. It may also be a multilayer film of insulating films. In this case, the film on the transistor 209 side is an inorganic insulating film. It is preferable to do so.

[0223] The above is a description of an example of a display device configuration.

[0224] The display device of this embodiment has a light-receiving element and a light-emitting element in the display unit, and the display unit displays an image. It has both a display function and a light detection function. This allows the display unit to be external or display Compared to cases where sensors are installed externally, it is possible to make electronic devices smaller and lighter. It can also be combined with sensors installed outside the display unit or outside the display device to enable more... It is also possible to realize functional electronic devices.

[0225] The light-receiving element has at least one layer other than the active layer that is the same configuration as the light-emitting element (EL element). Furthermore, the light-receiving element has all layers other than the active layer as light-emitting elements (EL elements). ) can also be made to have the same configuration as ). For example, the process of fabricating the light-emitting element can involve depositing the active layer. By simply adding a step, the light-emitting element and the light-receiving element can be formed on the same substrate. Furthermore, the light-receiving element and the light-emitting element use the same material for the pixel electrode and the common electrode, respectively. It can be formed in the process. Also, a circuit electrically connected to a light-receiving element and a light-emitting element By manufacturing electrically connected circuits using the same materials and processes, a display device can be created. The manufacturing process can be simplified. In this way, a light-receiving element can be incorporated without complex processes. This allows for the creation of highly convenient display devices.

[0226] [About metal oxides] The following section describes metal oxides applicable to semiconductor layers.

[0227] In this specification, metal oxides containing nitrogen are also referred to as metal oxides (metal oxides). They are sometimes collectively referred to as metal oxynitrides (metal oxides). Also, metal oxides containing nitrogen are sometimes called metal oxynitrides (metal oxides). It may also be called tal oxynitride. For example, zinc oxynitride (ZnON) Metal oxides containing nitrogen, such as those mentioned above, may be used in the semiconductor layer.

[0228] Furthermore, in this specification, etc., CAAC (c-axis aligned crystal l) and when referring to CAC (Cloud-Aligned Composite) CAAC represents an example of a crystal structure, while CAC represents an example of a function or material composition. .

[0229] For example, the semiconductor layer is CAC (Cloud-Aligned Composite)- OS (Oxide Semiconductor) can be used.

[0230] CAC-OS or CAC-metal oxide is a material in which some parts are conductive. It has both electrical and insulating properties in some parts of the material, and the material as a whole has semiconductor properties. Furthermore, CAC-OS or CAC-metal oxide is used in the semiconductor of transistors. When used in body layers, the conductive function is the ability to conduct electrons (or holes) that act as carriers. Yes, the insulating function is the function of preventing the flow of electrons, which act as carriers. Conductive function and insulating function By having the relationship function and the other function work complementaryly, the switching function (On / The function to turn off the CAC-OS or CAC-metal oxide is added to the CAC-OS or CAC-metal oxide. This is possible. In CAC-OS or CAC-metal oxide, each By separating the functions, it is possible to maximize the performance of both.

[0231] Furthermore, CAC-OS or CAC-metal oxide provides conductive and insulating properties. It has conductive regions. The conductive regions have the conductive function described above, and the insulating regions have the insulating function described above. It has the function of being conductive. Furthermore, within the material, the conductive region and the insulating region are separated by nanoparticles. In some cases, they are separated by a bell. Also, conductive regions and insulating regions are located within the material. It may be unevenly distributed. Also, the conductive region appears blurred around the edges and connected in a cloud-like manner when observed. There are cases where this can happen.

[0232] Furthermore, in CAC-OS or CAC-metal oxide, the conductive region and The insulating region is defined as 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. They may be dispersed in the material in sizes smaller than m.

[0233] Furthermore, CAC-OS or CAC-metal oxide have different band gaps. It is composed of components having [a certain characteristic]. For example, CAC-OS or CAC-metal ox The ide consists of a component with a wide gap due to the insulating region and a component with a wide gap due to the conductive region. It consists of a component having a narrow gap. In this configuration, when the carrier is flowing... In components with a narrow gap, the carrier mainly flows. The component with a gap acts complementaryly with the component with a wide gap, and the component with a narrow gap In conjunction with the components that perform this action, carriers also flow to components with a wide gap. Therefore, the above CAC-OS or CAC-metal oxide in the channel formation region of the transistor When used in this way, a high current driving force, i.e., a large on-current, is required in the transistor's on state. Furthermore, high field-effect mobility can be obtained.

[0234] In other words, CAC-OS or CAC-metal oxide is a matrix composite Material (matrix composite), or metal matrix composite material (metal It can also be called a matrix composite.

[0235] Oxide semiconductors (metal oxides) include single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. It can be divided into conductors and non-single-crystal oxide semiconductors, for example, CAAC-OS(c- axis aligned crystalline oxide semiconductor ctor), polycrystalline oxide semiconductor, nc-OS (nanocrystalline oxide IDE semiconductor, pseudo-amorphous oxide semiconductor (a-like OS (amorphous-like oxide semiconductor), and non Examples include crystalline oxide semiconductors.

[0236] CAAC-OS has c-axis orientation and multiple nanocrystals are linked in the ab-plane direction. It has a crystalline structure that is linked and distorted. Note that distortion refers to the linkage between multiple nanocrystals. Within a region, between a region with a aligned grid arrangement and another region with a aligned grid arrangement, the grid arrangement This refers to the point where the orientation has changed.

[0237] Nanocrystals are based on a hexagonal shape, but they are not necessarily regular hexagons; they can also be non-regular hexagonal. There are also cases where the distortion has a grid arrangement such as pentagons and heptagons. Oh, in CAAC-OS, even near strain, there are clear grain boundaries. It is difficult to confirm this, also known as Lee. That is, due to the distortion of the lattice arrangement, the crystal grain It can be seen that the formation of the boundary is suppressed. This is because CAAC-OS is in the ab-plane direction. The oxygen atoms are not densely arranged, and the substitution of metal elements reduces the bond distance between atoms. This is because distortion can be tolerated through changes and other processes.

[0238] Furthermore, CAAC-OS consists of a layer containing indium and oxygen (hereinafter referred to as the In layer), and elements A layered crystalline structure in which layers containing M, zinc, and oxygen (hereinafter referred to as (M,Zn) layers) are stacked. It tends to have a layered structure (also called a layered structure). Note that indium and element M are mutually substituted. It is possible, and if element M in the (M,Zn) layer is replaced with indium, the (In,M,Zn) layer It can also be expressed as follows. Furthermore, if the indium in the In layer is substituted with element M, then (In,M) It can also be described as a layer.

[0239] CAAC-OS is a highly crystalline metal oxide. On the other hand, CAAC-OS has a clear bond. Because it is difficult to confirm grain boundaries, a decrease in electron mobility caused by grain boundaries is less likely to occur. It can be said that... Also, the crystallinity of metal oxides decreases due to the inclusion of impurities and the formation of defects. Because this can occur, CAAC-OS may contain impurities or defects (oxygen deficiency (V) O :oxygen v Also called acancy. It can be said to be a metal oxide with low levels of (etc.). Therefore, CAAC Metal oxides containing -OS have stable physical properties. Therefore, those containing CAAC-OS These metal oxides are heat-resistant and highly reliable.

[0240] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially regions larger than 1 nm). It has periodicity in the atomic arrangement in the region of 3 nm or less. Also, nc-OS has different na No regularity is observed in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the entire film. Therefore, depending on the analytical method, nc-OS may be a-like OS or amorphous oxide semiconductor. It can sometimes be indistinguishable from the body.

[0241] Furthermore, indium is a type of metal oxide containing indium, gallium, and zinc. Um-gallium-zinc oxide (hereinafter referred to as IGZO) is stable when formed into the nanocrystals described above. It may take on a structure. In particular, IGZO tends to have difficulty growing crystals in the atmosphere. Smaller crystals (for example) are preferable to larger crystals (here, crystals of a few millimeters or a few centimeters). In some cases, using the aforementioned nanocrystal structure may result in greater structural stability.

[0242] a-like OS is a metallic acid having a structure between nc-OS and amorphous oxide semiconductors. It is a monster. a-like OS has porous or low-density regions. That is, a-li ke OS has lower crystallinity compared to nc-OS and CAAC-OS.

[0243] Oxide semiconductors (metal oxides) can take on diverse structures, each possessing different properties. An oxide semiconductor according to one aspect of the present invention is an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, and a-li It may have two or more of the following: ke OS, nc-OS, and CAAC-OS.

[0244] The metal oxide film, which functions as a semiconductor layer, is either an inert gas or an oxygen gas. Both can be used to form the film. Note that the oxygen flow rate during metal oxide film formation is also important. There are no particular limitations on the ratio (oxygen partial pressure). However, to obtain a transistor with high field-effect mobility... In this case, the oxygen flow rate ratio (oxygen partial pressure) during the formation of the metal oxide film is 0% or higher. Preferably 30% or less, more preferably 5% to 30%, and even more preferably 7% to 15%. It is preferable.

[0245] The metal oxide preferably has an energy gap of 2 eV or more, and 2.5 eV or less. It is more preferable that it be above, and even more preferable that it be 3eV or more. In this way, By using metal oxides with a wide energy gap, the off-current of the transistor is reduced. It is possible.

[0246] The substrate temperature during metal oxide film formation is preferably 350°C or lower, and is between room temperature and 200°C. More preferably, and even more preferably above room temperature and below 130°C. Substrate during metal oxide film formation. A room temperature is preferable because it can increase productivity.

[0247] Metal oxide films can be formed by sputtering. In addition, for example, P LD method, PECVD method, thermal CVD method, ALD method, vacuum deposition method, etc. may be used.

[0248] The above is an explanation of metal oxides.

[0249] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0250] (Embodiment 2) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figure 12.

[0251] A display device according to one aspect of the present invention comprises a first pixel circuit having a light-receiving element and a light-emitting element It has a second pixel circuit and a matrix. The first pixel circuit and the second pixel circuit are each a matrix They are arranged in a U-shape.

[0252] Figure 12A shows an example of a first pixel circuit having a light-receiving element, and Figure 12B shows a light-emitting element An example of a second pixel circuit is shown.

[0253] The pixel circuit PIX1 shown in Figure 12A consists of a light-receiving element PD, transistor M1, and transistor It has M2, transistor M3, transistor M4, and capacitive element C1. Here, This example shows the use of a photodiode as the photoelectric device (PD).

[0254] The photodetector PD has its cathode electrically connected to wiring V1 and its anode connected to transistor M1. It is electrically connected to either the source or drain of transistor M1. The gate of transistor M1 is wired Electrically connected to TX, with the other being either the source or drain, one electrode of the capacitive element C1, and the trap The source or drain of transistor M2 and the gate of transistor M3 are electrically connected. Connect. Transistor M2 has its gate electrically connected to wiring RES, and its source or gate. The other end of the rain is electrically connected to wiring V2. Transistor M3 is source or dray One end of the circuit is electrically connected to wiring V3, and the other end of the circuit is connected to transistor M4, either as the source or drain. Connect electrically to either the source or drain of transistor M4. The gate of transistor M4 is wired It is electrically connected to SE, and the other end of either the source or drain is electrically connected to wiring OUT1. .

[0255] A constant potential is supplied to wiring V1, wiring V2, and wiring V3, respectively. Photodetector PD When driving with reverse bias, supply a potential lower than the potential of wiring V1 to wiring V2. Transistor M2 is controlled by the signal supplied to wiring RES, and transistor A function that resets the potential of the node connected to the gate of M3 to the potential supplied to wiring V2. It has a transistor M1 controlled by a signal supplied to the wiring TX, and a photodetector P It has a function to control the timing at which the potential of the above node changes in accordance with the current flowing through D. Transistor M3 functions as an amplifying transistor that produces an output corresponding to the potential of the above node. Transistor M4 is controlled by a signal supplied to wiring SE, and the above node A selection transistor for reading the output corresponding to the potential using an external circuit connected to wiring OUT1. It functions as such.

[0256] The pixel circuit PIX2 shown in Figure 12B consists of a light-emitting element EL, a transistor M5, and a transistor It has M6, a transistor M7, and a capacitive element C2. Here, the light-emitting element EL is An example using light-emitting diodes is shown. In particular, an organic EL element is used as the light-emitting element (EL). It is preferable that they be present.

[0257] Transistor M5 has its gate electrically connected to wiring VG, and one of its sources or drains One side is electrically connected to the wiring VS, and the other side is either the source or the drain of the capacitive element C2. The electrodes and the gate of transistor M6 are electrically connected. One end of the drain is electrically connected to wiring V4, and the other end is connected to the anode of the light-emitting element EL, and Connect electrically to either the source or drain of transistor M7. 7 has its gate electrically connected to wiring MS, and the other side of the source or drain is connected to wiring OUT2. The cathode of the light-emitting element EL is electrically connected to wiring V5.

[0258] A constant potential is supplied to wiring V4 and wiring V5, respectively. Anode side of light-emitting element EL The cathode side can be made to a higher potential than the anode side. Transistor M 5 is controlled by a signal supplied to wiring VG and controls the selected state of pixel circuit PIX2. It functions as a selection transistor for that purpose. Also, transistor M6 is supplied to the gate. It functions as a drive transistor that controls the current flowing to the light-emitting element (EL) according to the potential. When transistor M5 is conducting, the potential supplied to wiring VS is the same as that of transistor M6. It is supplied to the gate, and the luminescence brightness of the light-emitting element (EL) can be controlled according to its potential. Transistor M7 is controlled by a signal supplied to wiring MS, and transistor M6 and light emission It has the function of outputting the potential between itself and element EL to the outside via wiring OUT2.

[0259] In this embodiment, the display device emits light in a pulsed manner to display an image. It may be displayed. By shortening the driving time of the light-emitting element, the power consumption of the display device is reduced, and Furthermore, heat generation can be suppressed. In particular, organic EL elements have excellent frequency characteristics. This is preferable. The frequency can be, for example, between 1 kHz and 100 MHz.

[0260] Here, the pixel circuit PIX1 has transistors M1, M2, and Transistor M3, transistor M4, and transistor M5 of the pixel circuit PIX2, Transistors M6 and M7 each have a semiconductor layer in which a channel is formed. It is preferable to apply a transistor using a metal oxide (oxide semiconductor) to this.

[0261] Using metal oxides with a wider band gap and lower carrier density than silicon Transistors can achieve extremely small off-currents. Therefore, their small The off-current allows the charge accumulated in the capacitive element connected in series with the transistor to be released over a long period of time. Therefore, it is possible to hold it in series, especially with capacitive element C1 or capacitive element C2. The transistors M1, M2, and M5 connected to it are made of oxide It is preferable to use transistors that incorporate semiconductors. Similarly, by using transistors that utilize oxide semiconductors, manufacturing costs can be reduced. It is possible.

[0262] Furthermore, in transistors M1 to M7, silicon is used in the semiconductor where the channel is formed. Transistors using capacitors can also be used. In particular, single-crystal silicon and polycrystalline silicon By using highly crystalline silicon such as crystalline silicon, it is possible to achieve high field-effect mobility. This is preferable because it enables faster operation.

[0263] Furthermore, an oxide semiconductor is applied to one or more of the transistors M1 to M7. As a configuration that uses transistors with silicon applied to them, That's good too.

[0264] Note that in Figures 12A and 12B, the transistor is an n-channel type transistor. Although this notation is used, p-channel transistors can also be used.

[0265] The transistors in pixel circuit PIX1 and pixel circuit PIX2 are It is preferable that they be formed side by side on the same substrate. In particular, the transistors of the pixel circuit PIX1 The transistors of the zista and the pixel circuit PIX2 are mixed within a single region and periodically It is preferable to have an arrangement configuration.

[0266] Furthermore, a transistor and a capacitive element are positioned in a location that overlaps with the photodetector PD or light-emitting element EL. It is preferable to provide one or more layers having one or both of the above. This allows each pixel to This reduces the effective area occupied by the path, enabling the realization of a high-definition light-receiving or display unit.

[0267] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0268] (Embodiment 3) In this embodiment, an electronic device according to one aspect of the present invention will be described using Figures 13 to 15. do.

[0269] The electronic device of this embodiment has a display device according to one aspect of the present invention. For example, the electronic device A display device according to one aspect of the present invention can be applied to the display unit. The device has a light detection function, so biometric authentication can be performed on the display unit, or by touch ( It can detect contact or near touch (proximity). This allows for the operation of electronic devices. It can improve functionality and convenience.

[0270] Examples of electronic devices include television equipment, desktop or notebook computers, etc. Computers, monitors for computers, digital signage, pachinko machines In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, and Digital video cameras, digital photo frames, mobile phones, portable game consoles, mobile information Examples include terminals and audio playback devices.

[0271] The electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotational speed). Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, (Includes functions for measuring radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation) It's okay to do so.

[0272] The electronic device of this embodiment can have various functions. For example, various information ( Functions to display still images, videos, text images, etc. on the display unit, touch panel function, calendar A function to display the date or time, and to run various software (programs). Functions include wireless communication and the ability to read programs or data recorded on a recording medium. They may possess abilities such as [specific abilities / abilities].

[0273] The electronic device 6500 shown in Figure 13A is a portable device that can be used as a smartphone. It is a news terminal device.

[0274] The electronic device 6500 consists of a housing 6501, a display unit 6502, a power button 6503, and a button 6 It includes 504, speaker 6505, microphone 6506, camera 6507, and light source 6508, etc. The display unit 6502 is equipped with a touch panel function.

[0275] A display device according to one aspect of the present invention can be applied to the display unit 6502.

[0276] Figure 13B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0277] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and the housing 650 Within the space surrounded by 1 and protective member 6510, display panel 6511, optical member 6512, The touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are located here. ru.

[0278] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. Nel 6513 is fixed by an adhesive layer (not shown).

[0279] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back. The FPC6515 is connected to the folded portion. IC6516 is mounted. FPC6515 is located on printed circuit board 6517. It is connected to the terminal.

[0280] A flexible display according to one aspect of the present invention can be applied to the display panel 6511. Yes, it is possible. Therefore, it is possible to realize extremely lightweight electronic devices. Also, the display panel 6511 is extremely Because it is extremely thin, it can accommodate a large-capacity 6518 battery while keeping the thickness of electronic devices down. Yes, it is possible. Also, by folding back a part of the display panel 6511, the FPC6515 can be placed on the back of the pixel area. By positioning the connection point, it is possible to realize electronic devices with narrow bezels.

[0281] Figure 14A shows an example of a television system. The television system 7100 has a housing 710 A display unit 7000 is incorporated into 1. Here, the stand 7103 connects to the housing 710. This shows the configuration that supports option 1.

[0282] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0283] The television device 7100 shown in Figure 14A is operated by the operation switches provided on the housing 7101. This can be done by using the remote control unit 7111 or by using the display unit 7000. It may also be equipped with a touch sensor, and by touching the display unit 7000 with a finger, etc., the television The device 7100 may be operated. The remote control operator 7111 is the remote control operator 711 It may have a display unit that displays information output from 1. A remote control operator 7111 is provided. Channel and volume can be controlled using the control keys or touch panel. The image displayed on the display unit 7000 can be operated.

[0284] The television system 7100 will consist of a receiver and a modem, etc. The device can receive regular television broadcasts. It can also receive broadcasts via a modem via wired or By connecting to a wireless communication network, one-way communication (from sender to receiver) or It is also possible to communicate information in two directions (between a sender and receiver, or between receivers). be.

[0285] Figure 14B shows an example of a notebook personal computer. The Pewter 7200 consists of a casing 7211, a keyboard 7212, and a pointing device 72 13. It has external connection ports 7214, etc. The display unit 7000 is incorporated into the housing 7211. It is being done.

[0286] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0287] Figures 14C and 14D show examples of digital signage.

[0288] The digital signage 7300 shown in Figure 14C consists of a housing 7301, a display unit 7000, and It has a speaker 7303, etc. Furthermore, it has an LED lamp, operation keys (power switch, or It may include an operating switch, connection terminals, various sensors, a microphone, etc. .

[0289] Figure 14D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is installed along the curved surface of the column 7401. To possess.

[0290] In Figures 14C and 14D, a display device according to one embodiment of the present invention is applied to the display unit 7000. It is possible.

[0291] The larger the display area 7000, the more information can be provided at once. The wider the display area 7000, the more easily it catches people's attention, which can, for example, enhance the effectiveness of advertising. can.

[0292] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It's desirable that it not only displays information but also allows users to operate it intuitively. Furthermore, route information... When used for purposes such as providing news or traffic information, intuitive operation is required. This can improve usability.

[0293] Furthermore, as shown in Figures 14C and 14D, the digital signage 7300 or digital The Lusigne 7400 is connected to the user's smartphone or other information terminal 7311. Alternatively, it is preferable that it be possible to communicate with the information terminal 7411 via wireless communication. For example, display Information about advertisements displayed in section 7000 is transmitted to information terminal 7311 or information terminal 7411. It can be displayed on the screen. Also, information terminal 7311 or information terminal 7411 By operating the control panel, you can switch the display on the 7000 display unit.

[0294] Additionally, information terminals can be connected to the Digital Signage 7300 or Digital Signage 7400. A game is played using the screen of the 7311 or information terminal 7411 as the control device (controller). It can also be done. This allows a large number of users to participate in the game simultaneously and enjoy It is possible to do so.

[0295] The electronic equipment shown in Figures 15A to 15F consists of a housing 9000, a display unit 9001, and a speaker 9 003, Operation key 9005 (including power switch or operation switch), Connection terminal 90 06. Sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid) Magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, radiation, flow rate, (Including functions for measuring humidity, gradient, vibration, odor, or infrared radiation), Microphone 9 It has 008, etc.

[0296] The electronic devices shown in Figures 15A to 15F have various functions. For example, various information ( Functions to display still images, videos, text images, etc. on the display unit, touch panel function, calendar A function that displays the date or time, etc., through various software (programs) Functions that control processing, wireless communication functions, programs or data recorded on recording media It can have functions such as reading and processing data. Furthermore, the functions of electronic devices are related to these. It is not limited and can have a variety of functions. Even if an electronic device has multiple display units Good. Also, an electronic device can be equipped with a camera, etc., to take still images and videos, and the recording medium (external or It has features such as saving to the camera (built-in), and displaying the captured image on the display unit. That's good too.

[0297] The details of the electronic equipment shown in Figures 15A to 15F will be explained below.

[0298] Figure 15A is a perspective view showing the personal digital assistant 9101. The personal digital assistant 9101 is, for example, For example, it can be used as a smartphone. Note that the mobile information terminal 9101 is a speed A connector 9003, a connection terminal 9006, a sensor 9007, etc. may be provided. Also, a portable information terminal The 9101 can display text and image information on its multiple surfaces. Figure 15A shows three of them. This shows an example of displaying icon 9050. Also, information 9051, indicated by a dashed rectangle, is shown. The information can also be displayed on other sides of the display unit 9001. An example of information 9051 is electronic data. Notifications for incoming calls, SNS messages, and phone calls; subject, sender name, and date / time for emails and SNS messages. This includes the time, battery level, and antenna signal strength. Alternatively, information 9051 may be displayed. You may display icons such as icon 9050 in the designated location.

[0299] Figure 15B is a perspective view showing the personal digital assistant 9102. The personal digital assistant 9102 is a table The display unit 9001 has the function of displaying information on three or more sides. Here, information 9052, information This shows an example where information 9053 and information 9054 are displayed on different sides. For example, user This is with the personal digital assistant 9102 stored in the breast pocket of the clothing, and the personal digital assistant 9102 Information 9053, displayed in a position that can be observed from above, can also be viewed by the user. This allows you to check the display without taking the personal digital assistant 9102 out of your pocket, for example, to make a phone call. You can decide whether or not to accept it.

[0300] Figure 15C is a perspective view showing a wristwatch-type portable information terminal 9200. Also, the display unit 90 01 has a curved display surface, and can display information along the curved surface. Furthermore, the portable information terminal 9200 can communicate with, for example, a wireless headset. This also allows for hands-free calling. Furthermore, the 9200 mobile information terminal is connected The connection terminal 9006 allows for mutual data transmission with other information terminals and for charging. It is also possible to perform the charging operation via wireless power supply.

[0301] Figures 15D, 15E, and 15F show a foldable portable information terminal 9201 from an oblique angle. This is a visual view. Figure 15D shows the mobile information terminal 9201 in its unfolded state, and Figure 15F shows it folded. Figure 15E is a perspective view of the state in which Figure 15D and Figure 15F are transitioning from one to the other. The portable information terminal 9201 is highly portable when folded, and when unfolded... The seamless, wide display area provides excellent readability. (Features of the 9201 mobile information terminal) The display unit 9001 is supported by three housings 9000 connected by hinges 9055. For example, the display unit 9001 is bent with a radius of curvature of 0.1 mm or more and 150 mm or less. It is possible.

[0302] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination. [Explanation of Symbols]

[0303] 10A~F: Display device, 21, 22, 23a, c: Light, 23b, d: Reflected light, 30, 31 B, 31G, 31R, 31W, 32: pixels, 41, 42: transistors, 50, 50a~ g: display device, 51, 51a, 51b, 52: substrate, 53: light-receiving element, 54: light-emitting element, 55, 55a, 55b: Functional layer; 57, 57B, 57G, 57R: Generating layer; 58: Reflective layer Layer, 59, 59a~c: Light guide plate, 60: Finger, 61: Contact area, 62: Fingerprint, 63: Imaging area 65: Stylus, 66: Trajectory, 71: Resin layer, 72: Conductive layer

Claims

[Claim 1] It comprises a first substrate, a light guide plate, a first light-emitting element, a second light-emitting element, and a light-receiving element. The first substrate and the light guide plate are provided facing each other, The first light-emitting element and the light-receiving element are provided between the first substrate and the light guide plate. The first light-emitting element has the function of emitting first light through the light guide plate, The second light-emitting element has the function of emitting a second light to the side surface of the light guide plate, The light-receiving element has the function of receiving the second light and converting it into an electrical signal. The first light includes visible light, The second light includes infrared light, Display device.

Images