Circuit board with embedded electronic components
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- TDK CORP
- Filing Date
- 2025-01-17
- Publication Date
- 2026-07-30
AI Technical Summary
【0007】 本開示によれば、発熱量の大きい電子部品と発熱量の小さい電子部品が埋め込まれた電子部品内蔵基板において、発熱量の大きい電子部品からの放熱性を高める技術が提供される。
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Figure 2026123316000001_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to a substrate with built-in electronic components, and particularly to a substrate with built-in electronic components having a structure in which a plurality of electronic components are embedded.
Background Art
[0002] Patent Document 1 discloses a substrate with built-in electronic components having a structure in which a plurality of electronic components such as semiconductor ICs are embedded.
Prior Art Documents
Patent Documents
[0003]
Patent Document 1
Summary of the Invention
Problems to be Solved by the Invention
[0004] When a plurality of electronic components such as semiconductor devices are embedded in a substrate with built-in electronic components, it is an important issue to design so that heat generation and noise from each electronic component do not mutually affect each other.
[0005] The present disclosure discloses a technology related to a substrate with built-in electronic components that improves the heat dissipation of an electronic component with a large amount of heat generation and considers the influence of noise between electronic components.
Means for Solving the Problems
[0006] An electronic component-embedded substrate according to one embodiment of the present disclosure has a structure in which a plurality of conductive layers and a plurality of insulating layers are alternately laminated, and has first and second surface layers located on opposite sides of each other. The plurality of insulating layers include a first insulating layer in which a power device is embedded, a second insulating layer in which a control IC connected to the power device is embedded, and third and fourth insulating layers sandwiching the first and second insulating layers in the lamination direction. The third insulating layer, the first insulating layer, the second insulating layer, and the fourth insulating layer are laminated in this order from the first surface layer side toward the second surface layer side. The third and fourth insulating layers are made of a core material in which a resin material is impregnated into a core material. The first and second insulating layers are made of a resin material without a core material. The power device and the control IC are arranged so that at least a portion of them overlap each other. The power device is embedded in the first insulating layer such that the main surface on which the terminal electrodes are provided faces the third insulating layer. The terminal electrodes of the power device are located in a position overlapping with the power device and are connected to external terminals provided on the first surface layer via via conductors embedded in the first and third insulating layers. [Effects of the Invention]
[0007] According to this disclosure, a technology is provided to improve heat dissipation from the high-heat-generating electronic component in an electronic component embedded substrate in which high-heat-generating and low-heat-generating electronic components are embedded. [Brief explanation of the drawing]
[0008] [Figure 1] Figure 1 is a schematic cross-sectional view illustrating the structure of an electronic component embedded substrate 100 according to one embodiment of the present disclosure. [Figure 2] Figure 2 is a schematic cross-sectional view illustrating the structure of the electronic component-embedded substrate 100A according to the first modification. [Figure 3] Figure 3 is a schematic cross-sectional view illustrating the structure of the electronic component-embedded substrate 100B according to a second modification. [Figure 4] Figure 4 is a schematic cross-sectional view illustrating the structure of the electronic component embedded substrate 100C according to a third modification. [Modes for carrying out the invention]
[0009] The embodiments of the technology described herein will be described in detail below with reference to the attached drawings.
[0010] Figure 1 is a schematic cross-sectional view illustrating the structure of an electronic component embedded substrate 100 according to one embodiment of the present disclosure.
[0011] As shown in Figure 1, the electronic component embedded substrate 100 according to this embodiment has a structure in which four insulating layers 111 to 114 and five conductive layers 121 to 125 are alternately stacked in the stacking direction. Insulating layer 111 is located between conductive layers 121 and 122, insulating layer 112 is located between conductive layers 122 and 123, insulating layer 113 is located between conductive layers 123 and 124, and insulating layer 114 is located between conductive layers 124 and 125.
[0012] A portion of the surface of the conductive layer 121 is covered with solder resist 131. Solder resist 131 constitutes the first surface layer 101 of the electronic component embedded substrate 100. Therefore, the insulating layer 111 is the interlayer film closest to the first surface layer 101. An interlayer film refers to an insulating layer with conductive layers on both its front and back surfaces, and in that sense, solder resist 131 does not qualify as an interlayer film. A portion of the conductive pattern 161 located on the conductive layer 121 is exposed without being covered by solder resist 131, thereby forming an external terminal.
[0013] A portion of the surface of the conductive layer 124 is covered with solder resist 132. Solder resist 132 constitutes the second surface layer 102 of the electronic component embedded substrate 100. Therefore, the insulating layer 114 is the interlayer film closest to the second surface layer 102. Solder resist 132, like solder resist 131, does not constitute an interlayer film. A portion of the conductive pattern 164 located on the conductive layer 124 is exposed without being covered by solder resist 132, thereby forming an external terminal.
[0014] As shown in Figure 1, the electronic component embedded substrate 100 according to this embodiment is mounted on the circuit board 200 such that the first surface layer 101 faces the circuit board 200. Multiple land patterns 201 are provided on the surface of the circuit board 200, and multiple external terminals (exposed portions of the conductor pattern 161) exposed on the first surface layer 101 are connected to the corresponding land patterns 201 via solder 202.
[0015] On the other hand, multiple electronic components 181 to 183 may be mounted on the second surface layer 102 side of the electronic component embedded substrate 100. The electronic components 181 to 183 may be passive components such as capacitors, inductors, and filters. The terminal electrodes of the electronic components 181 to 183 are connected via solder 184 to their respective external terminals (exposed parts of the conductor pattern 164) exposed on the second surface layer 102. The second surface layer 102 of the electronic component embedded substrate 100 may be covered with a molding resin 190 that embeds the electronic components 181 to 183.
[0016] The insulating layer 112 consists of two insulating layers 112A and 112B, and the power device 140 is embedded between them. The power device 140 is an element that constitutes part of the power supply circuit and may be a semiconductor IC that integrates a power supply circuit such as a DC-DC converter, or it may be a semiconductor device that carries a large current, such as a MOSFET. Because a relatively large current flows through the power device 140, it generates a large amount of heat during operation. The power device 140 has a main surface 141 on which terminal electrodes 143 are provided, and a back surface 142 located on the opposite side of the main surface 141, and is embedded in the insulating layer 112 such that the main surface 141 faces the insulating layer 111 side (the first surface layer 101 side). The power device 140 has a horizontal structure in which circuit elements are provided on the main surface 141 side and the operating current flows along the main surface 141. The back surface 142 of the power device 140 may be covered with a shield layer 144 made of metal. When the power device 140 operates, electromagnetic field noise is generated by its operating current. This electromagnetic field noise is shielded by a shielding layer 144 provided on the back surface 142 of the power device 140. The shielding layer 144 is in contact with the insulating layer 112A, and the main surface 141 and side surfaces of the power device 140 are in contact with the insulating layer 112B.
[0017] The insulating layer 113 consists of two insulating layers 113A and 113B, with the control IC 150 embedded between them. The control IC 150 is connected to the power device 140 and may include circuits for controlling, monitoring, or decoding signals output from the power device 140. For example, if the power device 140 is a DC-DC converter, the control IC 150 may be an IC that controls the DC-DC converter, or an IC that utilizes the power supplied by the DC-DC converter. If the power device 140 is a semiconductor device that carries a large current, such as a MOSFET, the control IC 150 may be an IC that controls the on / off state of the semiconductor device. The control IC 150 also generates heat during operation, but the amount of heat generated is greater for the power device 140. The control IC 150 has a main surface 151 on which terminal electrodes 153 are provided, and a back surface 152 located on the opposite side of the main surface 151. The back surface 152 is embedded in the insulating layer 113 so that it faces the insulating layer 114 side (the second surface layer 102 side). The back surface 152 of the control IC 150 is in contact with the insulating layer 113A, while the main surface 151 and side surfaces of the control IC 150 are in contact with the insulating layer 113B.
[0018] Thus, since the power device 140 and the control IC 150 are embedded in the insulating layers 112 and 113 respectively, the insulating layers 112 and 113 do not contain core materials such as glass cloth that would hinder the embedding of the elements. In other words, the insulating layers 112 and 113 are made of a resin material that does not contain a core material. The insulating layers 112 and 113 may contain fillers made of inorganic materials. In contrast, the insulating layers 111 and 114 located on the surface side are made of a core material in which a resin material is impregnated into a core material. The insulating layers 111 and 114 may also contain fillers made of inorganic materials. In this way, the strength of the entire electronic component embedded substrate 100 is ensured by sandwiching the core-free insulating layers 112 and 113 from the stacking direction with the high-strength insulating layers 111 and 114. The thickness of each insulating layer 111 and 114 may be thinner than the thickness of each insulating layer 112 and 113.
[0019] As shown in FIG. 1, two conductor layers adjacent in the stacking direction are connected to each other by via conductors. For example, the conductor pattern 161 located in the conductor layer 121 and the conductor pattern 162 located in the conductor layer 122 are connected via a plurality of via conductors 171 embedded in the insulating layer 111. The conductor pattern 162 located in the conductor layer 122 and the conductor pattern 163 located in the conductor layer 123 are connected via a via conductor 173 embedded in the insulating layer 112. The conductor pattern 163 located in the conductor layer 123 and the conductor pattern 164 located in the conductor layer 124 are connected via a via conductor 175 embedded in the insulating layer 113. The conductor pattern 164 located in the conductor layer 124 and the conductor pattern 165 located in the conductor layer 125 are connected via a via conductor 176 embedded in the insulating layer 114.
[0020] Furthermore, the terminal electrode 143 of the power device 140 is connected to the conductor pattern 162 located in the conductor layer 122 via a plurality of via conductors 172 embedded in the insulating layer 112. The terminal electrode 153 of the control IC 150 is connected to the conductor pattern 163 located in the conductor layer 123 via a via conductor 174 embedded in the insulating layer 113.
[0021] As shown in FIG. 1, a part of the conductor pattern 162 located in the conductor layer 122 is arranged at a position overlapping the power device 140 in a plan view. The conductor pattern 162 arranged at the position overlapping the power device 140 is connected to the terminal electrode 143 of the power device 140 via the via conductor 172 and is also connected to the conductor pattern 161 (external terminal) located in the conductor layer 121 via the via conductor 171. Thereby, the heat generated by the power device 140 is transmitted in the thickness direction via the via conductor 172, the conductor pattern 162, the via conductor 171, and the conductor pattern 161. And since a part of the conductor pattern 161 constitutes an external terminal connected to the circuit board 200, the heat generated by the power device 140 is radiated to the circuit board 200 side in the shortest distance.
[0022] Thus, the power device 140 is embedded in the insulating layer 112 such that the main surface 141 of the power device 140 with a large calorific value faces the first surface layer 101 side, and via conductors 172 and 171 are arranged at positions overlapping the power device 140 in a plan view, so that the heat dissipation property of the power device 140 can be improved. Moreover, the via conductor 171 embedded in the insulating layer 111 and the via conductor 172 embedded in the insulating layer 112 are provided separately and connected through the conductor pattern 162. Therefore, not only can the number and positions of the via conductor 171 and the number and positions of the via conductor 172 be designed arbitrarily, but also the formation of vias for embedding the via conductors 171 and 172 becomes easy. That is, for the via for embedding the via conductor 171, it can be formed by using a processing method suitable for the insulating layer 111 containing a core material, and for the via for embedding the via conductor 172, it can be formed by using a processing method suitable for the insulating layer 112 not containing a core material.
[0023] In order to further improve the heat dissipation property of the power device 140, a filler having a higher thermal conductivity than the resin material can be used as the filler material contained in the insulating layer 112. According to this, since the insulating layer itself functions as a heat dissipation path, the heat dissipation property of the power device 140 can be further improved. Examples of the filler having a high thermal conductivity include fillers made of alumina, silicon nitride, and the like. The insulating layer 113 may not contain a filler, or may contain a filler made of the same material as the filler contained in the insulating layer 112. Even when the insulating layer 112 and the insulating layer 113 contain fillers made of the same material, the heat dissipation property of the power device 140 can be improved by making the content of the filler contained in the insulating layer 112 larger than the content of the filler contained in the insulating layer 113.
[0024] In the example shown in Figure 1, the control IC 150 has a larger planar size than the power device 140, and the entire power device 140 overlaps with the control IC 150. This layout makes it possible to reduce the planar size of the electronic component substrate 100. However, it is not essential that the entire power device 140 overlaps with the control IC 150; the planar size of the electronic component substrate 100 can be reduced if at least a part of the power device 140 and at least a part of the control IC 150 overlap.
[0025] Furthermore, in the example shown in Figure 1, the wiring distance between the electronic components 181-183 and the control IC 150 is shortened by placing the control IC 150 in a layer close to the second surface layer 102. As a result, if the electronic components 181-183 are noise suppression elements such as capacitors, the noise suppression effect is enhanced.
[0026] Furthermore, in the example shown in Figure 1, the power device 140 is placed in a layer close to the first surface layer 101 facing the circuit board 200, and the power device 140 and the circuit board 200 are connected via many via conductors 171 and 172. This improves the heat dissipation of the power device 140.
[0027] Furthermore, because the interlayer distance between the power device 140 and the control IC 150 is short, it is possible to shorten the wiring length between the power device 140 and the control IC 150. As a result, compared to surface mounting the power device 140 and the control IC 150 on the circuit board 200, it is possible to minimize wiring resistance, which causes signal degradation, and inductance components that adversely affect the signal waveform. In addition, by integrating the power device 140 and the control IC 150 into the electronic component substrate 100 so that they overlap, the planar size of the electronic component substrate 100 can be reduced.
[0028] In the example shown in Figure 1, the conductor pattern 164 located in the conductor layer 124 includes a shield pattern 164S. The shield pattern 164S may be given a ground potential. The shield pattern 164S overlaps with the power device 140 and the control IC 150 in a plan view, thereby suppressing the radiation of electromagnetic field noise generated by the power device 140 and the control IC 150 toward the second surface layer 102. The shield pattern 164S may cover the entire power device 140 and the control IC 150, but by covering at least half of the control IC 150, electromagnetic field noise can be effectively suppressed. Furthermore, if the shield layer 144 is provided on the back surface 142 of the power device 140, the radiation of electromagnetic field noise generated by the power device 140 toward the second surface layer 102 is suppressed more effectively.
[0029] Figure 2 is a schematic cross-sectional view illustrating the structure of the electronic component-embedded substrate 100A according to the first modification.
[0030] As shown in Figure 2, the first modified electronic component substrate 100A differs from the electronic component substrate 100 shown in Figure 1 in that the molding resin 190 is omitted. Since the other basic configurations are the same as the electronic component substrate 100 shown in Figure 1, the same reference numerals are used for the same elements, and redundant explanations are omitted.
[0031] As illustrated by the first modified example, the circuit board 100A with embedded electronic components, it is not essential to cover the electronic components 181-183 with the molding resin 190.
[0032] Figure 3 is a schematic cross-sectional view illustrating the structure of the electronic component-embedded substrate 100B according to a second modification.
[0033] As shown in Figure 3, the electronic component-embedded substrate 100B according to the second modification is inverted vertically from the electronic component-embedded substrate 100 shown in Figure 1, and is mounted on the circuit board 200 such that the second surface layer 102 faces the circuit board 200. Multiple land patterns 201 provided on the surface of the circuit board 200 are connected via solder 202 to multiple external terminals (exposed parts of conductor patterns 164) exposed on the second surface layer 102. In the second modification, electronic components 185, 186 and heat sinks 187, 188 are mounted on the first surface layer 101 side. The terminal electrodes of electronic components 185, 186 are connected via solder 184 to their respective external terminals (exposed parts of conductor patterns 161) exposed on the first surface layer 101. The heat sinks 187, 188 are connected via solder 184 to their respective external terminals (exposed parts of conductor patterns 161) exposed on the first surface layer 101. The heatsinks 187 and 188 overlap with the power device 140 in a plan view. Since the other basic configurations are the same as the electronic component substrate 100 shown in Figure 1, the same reference numerals are used for the same elements, and redundant explanations are omitted.
[0034] As illustrated by the second modified example, the electronic component-embedded substrate 100B, the vertical direction relative to the circuit board 200 is not particularly limited. Furthermore, even if the first surface layer 101 faces away from the circuit board 200, the heat generated by the power device 140 can be efficiently dissipated by mounting heat sinks 187, 188, etc., on the first surface layer 101. Instead of using a dedicated heat sink, passive components such as inductors themselves may be used as heat sinks.
[0035] Figure 4 is a schematic cross-sectional view illustrating the structure of the electronic component embedded substrate 100C according to a third modification.
[0036] As shown in Figure 4, the third modified electronic component substrate 100C differs from the electronic component substrate 100 shown in Figure 1 in that the power device 140 has a vertical structure in which current flows in the thickness direction, and the conductor pattern 163 located in the conductor layer 123 includes a shield pattern 163S. Since the other basic configurations are the same as the electronic component substrate 100 shown in Figure 1, the same reference numerals are used for the same elements, and redundant explanations are omitted.
[0037] In the example shown in Figure 4, the power device 140 has a vertical structure in which current flows in the thickness direction. Therefore, when the power device 140 operates, as indicated by reference numeral 146, an operating current flows through the back surface wiring 145 provided on the back surface 142 of the power device 140. When the operating current flowing through the back surface wiring 145 fluctuates, magnetic field noise is generated, and the power device 140 may become a noise source for the signal input circuit section 154 included in the control IC 150. The input circuit section 154, including the input stage of the operational amplifier, has a high impedance to the input signal and is susceptible to electromagnetic field noise. As a result, malfunctions such as the inability to accurately determine the detection signal may occur due to the influence of noise. To solve this problem, by providing a shielding pattern 163S in a position that overlaps with the input circuit section 154 of the control IC 150, or in an area slightly wider than the area where the input circuit section 154 is provided, in a plan view from the stacking direction, a shielding effect against electromagnetic field noise can be expected, and malfunctions of the control IC 150 can be prevented.
[0038] The shield pattern 163S may be given a ground potential. Also, as shown in the example in Figure 4, the shield pattern 163S and the shield pattern 164S may be short-circuited inside the electronic component substrate 100C.
[0039] While embodiments of the technology described herein have been explained above, it goes without saying that the technology described herein is not limited to the embodiments described above, and various modifications are possible without departing from its spirit, and these modifications are also included within the scope of the technology described herein.
[0040] The technology relating to this disclosure includes, but is not limited to, the following configuration examples.
[0041] An electronic component-embedded substrate according to one embodiment of the present disclosure has a structure in which a plurality of conductive layers and a plurality of insulating layers are alternately laminated, and has first and second surface layers located on opposite sides of each other. The plurality of insulating layers include a first insulating layer in which a power device is embedded, a second insulating layer in which a control IC connected to the power device is embedded, and third and fourth insulating layers sandwiching the first and second insulating layers in the lamination direction. The third insulating layer, the first insulating layer, the second insulating layer, and the fourth insulating layer are laminated in this order from the first surface layer side toward the second surface layer side. The third and fourth insulating layers are made of a core material in which a resin material is impregnated into a core material. The first and second insulating layers are made of a resin material without a core material. The power device and the control IC are arranged so that at least a portion of them overlap each other. The power device is embedded in the first insulating layer such that the main surface on which the terminal electrodes are provided faces the third insulating layer. The terminal electrodes of the power device are positioned to overlap with the power device and are connected to external terminals provided on the first surface layer via via conductors embedded in the first and third insulating layers. This allows for efficient heat dissipation from the power device to the external terminals.
[0042] In the above-described circuit board with embedded electronic components, the multiple conductor layers include a first conductor layer located between the second insulating layer and the fourth insulating layer, and the first conductor layer may include a shielding pattern that covers more than half of the control IC in a plan view. This makes it possible to suppress electromagnetic field noise radiated to the second surface layer.
[0043] In the above-described circuit board with embedded electronic components, the power device may have its back surface, located opposite the main surface, covered with a shielding layer. This makes it possible to suppress electromagnetic field noise radiated to the second surface layer.
[0044] In the above-described circuit board with embedded electronic components, the first insulating layer may contain a filler with a higher thermal conductivity than the resin material. This makes it possible to further improve the heat dissipation of the power device.
[0045] In the above-described substrate with embedded electronic components, the multiple conductor layers include a second conductor layer located between the first insulating layer and the third insulating layer, and a third conductor layer located on the opposite side of the third insulating layer from the second conductor layer. The second conductor layer includes a conductor pattern located in a position overlapping with the power device, and the third conductor layer includes an external terminal located in a position overlapping with the conductor pattern. The via conductor may include a plurality of first via conductors embedded in the first insulating layer that connect the conductor pattern and the terminal electrodes of the power device, and a plurality of second via conductors embedded in the third insulating layer that connect the external terminal and the conductor pattern. This makes it easier to fabricate vias and modify their design.
[0046] In the above-described circuit board with embedded electronic components, the multiple conductor layers include a fourth conductor layer located between the first and second insulating layers, the power device has a vertical structure through which current flows in the thickness direction, the power device has back-side wiring on the back surface opposite the main surface that constitutes a current path, the control IC has a signal input circuit section, and the fourth conductor layer may include a shielding pattern provided in a position that overlaps with the input circuit section of the control IC in a plan view from the stacking direction. This makes it possible to protect the input circuit section, which is susceptible to electromagnetic noise, from electromagnetic noise.
[0047] The above-described circuit board with embedded electronic components may also include additional electronic components mounted on a second surface layer. This allows for more advanced functionality of the circuit board with embedded electronic components.
[0048] The above-described circuit board with embedded electronic components may further include a molding resin covering the second surface layer to embed the electronic components. In this case, the electronic components are protected by the molding resin. [Explanation of Symbols]
[0049] 100, 100A, 100B, 100C Electronic component embedded circuit board 101 First surface layer 102 Second surface layer 111~114, 112A, 112B, 113A, 113B Insulating layer 121-125 Conductor layer 131,132 Solder Resist 140 Power Devices 141 Main surface of power device 142 Back side of power devices 143 Power device terminal electrodes 144 Shield layer 145 Rear wiring 146 Operating current 150 Control ICs 151 Main surface of the control IC 152 Back side of the control IC 153 Control IC terminal electrodes 154 Control IC Input Circuit Section 161-165 Conductor Pattern 163S, 164S Shield Pattern 171-176 Via conductor 181-183 Electronic Components 184 Solder 185,186 Electronic Components 187,188 Heatsink 190 Mold resin 200 circuit boards 201 Land Pattern 202 Solder
Claims
1. An electronic component substrate having a structure in which multiple conductive layers and multiple insulating layers are alternately stacked, and having first and second surface layers located on opposite sides of each other, The plurality of insulating layers include a first insulating layer in which a power device is embedded, a second insulating layer in which a control IC connected to the power device is embedded, and third and fourth insulating layers sandwiching the first insulating layer and the second insulating layer in the stacking direction. The third insulating layer, the first insulating layer, the second insulating layer, and the fourth insulating layer are stacked in this order, from the first surface side toward the second surface side. The third and fourth insulating layers consist of a core material in which a resin material is impregnated into a core material. The first and second insulating layers are made of a resin material that does not contain a core material. The power device and the control IC are arranged such that at least a portion of them overlap each other. The power device is embedded in the first insulating layer such that the main surface on which the terminal electrodes are provided faces the third insulating layer. The terminal electrodes of the power device are provided in a position overlapping with the power device and are connected to an external terminal provided on the first surface layer via via conductors embedded in the first and third insulating layers. Circuit board with embedded electronic components.
2. The plurality of conductor layers include a first conductor layer located between the second insulating layer and the fourth insulating layer. The first conductor layer includes a shielding pattern that covers more than half of the control IC in a plan view. The electronic component embedded substrate according to claim 1.
3. The power device has a back surface located opposite the main surface that is covered with a shielding layer. The electronic component embedded substrate according to claim 1.
4. The first insulating layer contains a filler with a higher thermal conductivity than the resin material. The electronic component embedded substrate according to claim 1.
5. The plurality of conductor layers include a second conductor layer located between the first insulating layer and the third insulating layer, and a third conductor layer located on the opposite side from the second conductor layer when viewed from the third insulating layer. The second conductor layer includes a conductor pattern provided in a position overlapping with the power device. The third conductor layer includes the external terminals provided at a position overlapping with the conductor pattern, The via conductor includes a plurality of first via conductors embedded in the first insulating layer and connecting the conductor pattern to the terminal electrodes of the power device, and a plurality of second via conductors embedded in the third insulating layer and connecting the external terminal to the conductor pattern. The electronic component embedded substrate according to claim 1.
6. The plurality of conductor layers include a fourth conductor layer located between the first insulating layer and the second insulating layer. The aforementioned power device has a vertical structure through which current flows in the thickness direction, The power device has back surface wiring that constitutes a current path on the back surface located opposite the main surface, The control IC has a signal input circuit section, The fourth conductor layer includes a shield pattern provided in a position that overlaps with the input circuit portion of the control IC in a plan view from the stacking direction. The electronic component embedded substrate according to claim 1.
7. Further comprising the electronic components mounted on the second surface layer, An electronic component-embedded substrate according to any one of claims 1 to 6.
8. The second surface layer is further covered with a molding resin so as to embed the aforementioned electronic components. The circuit board with embedded electronic components according to claim 7.