Plasma processing equipment

Abstract

During idling, the gas lines are efficiently exhausted. [Solution] The plasma processing apparatus 100 includes a supply line G3 and an exhaust line G4 connected inside the processing chamber 118, an individual supply line G6 connected to the gas supply unit 106, an individual supply line G7 connected to the gas supply unit 107, an individual exhaust line G8, and an individual exhaust line G9. The plasma processing apparatus 100 also includes a bypass line G1 connected to the exhaust line G4, the individual exhaust line G8, and the individual exhaust line G9, and a bypass line G2 connected to the supply line G3 and the exhaust line G4.

Description

Technical Field

[0001] The present invention relates to a plasma processing apparatus.

Background Art

[0002] In the manufacturing process of semiconductor chips, plasma processing is performed on a sample such as a semiconductor wafer using a plasma processing apparatus. In recent years, in plasma generation, not only an inert gas but also a low-vapor-pressure gas or a highly corrosive gas is used as a processing gas. Also, after the plasma processing of the previous sample is completed, the period until the start of the plasma processing of the next sample is an idle period during which no plasma processing is performed.

[0003] For example, Patent Document 1 discloses a supply line for supplying a processing gas into the processing chamber and a processing chamber exhaust line connected to a vacuum exhaust pump and communicating with the inside of the processing chamber. The supply line and the processing chamber exhaust line are connected to an exhaust line. The inside of the processing chamber is exhausted through the processing chamber exhaust line and the exhaust line.

[0004] Also, Patent Document 2 discloses a technique for setting the temperature of the inner wall of the processing chamber to a desired temperature using plasma generated by high-frequency power during the idle period.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0006] Patent Document 1 presents the following problems in the area where exhaust is required: insufficient exhaust of liquefied gas, prolonged exhaust time, and reduced throughput due to a decrease in the temperature of the processing chamber during the idling period.

[0007] In Patent Document 2, a process is performed to exhaust the inside of the processing chamber before and after a process to maintain the temperature of the processing chamber during the idling period. In this case, low vapor pressure gas or highly corrosive gas that is not used in the exhaust process may remain inside the gas line. If the exhaust process is performed in this state, the liquefaction of the above gas is promoted, and the liquefied gas chemically reacts with the materials constituting the gas line. The products generated by the chemical reaction are mixed into the processing chamber as foreign matter, and these foreign matter adheres to the sample. As a result, there is a problem of reduced throughput.

[0008] Therefore, a technology is desired that can efficiently exhaust the inside of the gas line so that treatment gases such as low vapor pressure gases or highly corrosive gases do not remain inside the gas line during the idling period.

[0009] Other challenges and novel features will become apparent from the description and accompanying drawings in this specification. [Means for solving the problem]

[0010] A brief overview of some of the representative embodiments disclosed in this application is as follows:

[0011] A plasma processing apparatus in one embodiment includes a processing chamber for performing plasma processing on a sample, a supply line connected to the inside of the processing chamber for supplying processing gas to the inside of the processing chamber, an exhaust line connected to the inside of the processing chamber for exhausting the processing gas from the inside of the processing chamber, a first vacuum exhaust device provided on the exhaust line, a first valve provided on the exhaust line and located between the processing chamber and the first vacuum exhaust device, a first gas supply unit for supplying inert gas as the processing gas, a second gas supply unit for supplying a second gas different from the inert gas as the processing gas, a first individual supply line connected to the first gas supply unit and the supply line, a second valve provided on the first individual supply line, a third valve provided on the first individual supply line and located closer to the first gas supply unit than the second valve, a first individual exhaust line connected to the part of the first individual supply line located between the second valve and the third valve, and the first individual The system includes a fourth valve provided in a separate exhaust line, a second individual supply line connected to the second gas supply unit and the supply line, a fifth valve provided in the second individual supply line, a sixth valve provided in the second individual supply line and located closer to the second gas supply unit than the fifth valve, a second individual exhaust line connected to the second individual supply line between the fifth valve and the sixth valve, a seventh valve provided in the second individual exhaust line, a first bypass line connected to the exhaust line, the first individual supply line and the second individual exhaust line, a second bypass line connected to the supply line and the exhaust line, an eighth valve provided in the supply line and located between the location where the second bypass line is connected to the supply line and the processing chamber, and a ninth valve provided in the exhaust line and located between the location where the first bypass line and the second bypass line are connected to the exhaust line and the first vacuum exhaust device. [Effects of the Invention]

[0012] According to one embodiment, the gas line can be efficiently exhausted during the idling period so that no processing gas remains inside the gas line. [Brief explanation of the drawing]

[0013] [Figure 1] This is a schematic diagram showing the plasma processing apparatus in Embodiment 1. [Figure 2] This is a schematic diagram showing another configuration example of the plasma processing apparatus in Embodiment 1. [Figure 3] This is a timing chart showing the open / closed states of each valve used in the plasma treatment method, including the exhaust means, in Embodiment 1. [Figure 4] Figure 3 is a schematic diagram showing the plasma processing apparatus, illustrating the open / closed state of each valve in step S1. [Figure 5] Figure 3 is a schematic diagram showing the plasma processing apparatus, illustrating the open / closed state of each valve in step S2. [Figure 6] Figure 3 is a schematic diagram showing the plasma processing apparatus, illustrating the open / closed state of each valve in step S3. [Figure 7] This is a schematic diagram showing the plasma processing apparatus, illustrating the open / closed state of each valve in step S4 of Figure 3. [Figure 8] This is a schematic diagram showing the plasma processing apparatus, illustrating the open / closed state of each valve in steps S5 and S7 of Figure 3. [Figure 9] This is a schematic diagram showing the plasma processing apparatus, illustrating the open / closed state of each valve in steps S6 and S8 of Figure 3. [Modes for carrying out the invention]

[0014] The embodiments will be described in detail below with reference to the drawings. In all the drawings used to describe the embodiments, the same reference numerals are used for members having the same function, and repeated descriptions of them will be omitted. In addition, in the following embodiments, descriptions of the same or similar parts will not be repeated unless it is particularly necessary.

[0015] (Embodiment 1) <Configuration of Plasma Processing Apparatus> The following describes the outline of the plasma processing apparatus 100 in Embodiment 1 with reference to FIG. 1.

[0016] As shown in FIG. 1, the plasma processing apparatus 100 includes a cylindrical vacuum vessel 119, a processing chamber 118 which is the internal space of the vacuum vessel 119 and where plasma processing is performed on the sample 120, and a stage 121 provided inside the processing chamber 118.

[0017] Above the stage 121, a dielectric window 114 having a disc shape and a shower plate 115 having a disc shape are provided. The dielectric window 114 is made of a dielectric material such as quartz or ceramics and hermetically seals the inside of the processing chamber 118. The shower plate 115 is provided below the dielectric window 114 so as to be separated from the dielectric window 114 and is made of a dielectric material such as quartz. Further, a plurality of through holes are provided in the shower plate 115.

[0018] The stage 121 is used to place the sample 120 when performing plasma processing on the sample 120. Note that the sample 120 is a wafer made of a semiconductor material such as silicon.

[0019] Also, although not shown in detail, the stage 121 has a cylindrical shape and has a base material made of a metal material. The upper surface of the base material is covered with a dielectric film. A heater is provided inside the dielectric film, and a plurality of electrodes are provided above the heater. A DC voltage is supplied to the plurality of electrodes. By this DC voltage, an electrostatic force for adsorbing the sample 120 to the upper surface of the dielectric film and holding the sample 120 can be generated inside the dielectric film and the sample 120.

[0020] Furthermore, the plasma processing apparatus 100 is equipped with a high-frequency power supply 123. The high-frequency power supply 123 is connected to the substrate of the stage 121 via an impedance matching device. During plasma processing of the sample 120, high-frequency power is supplied from the high-frequency power supply 123 to the substrate, thereby forming an electric field on the upper surface of the sample 120. This electric field can attract charged particles in the plasma to the sample 120.

[0021] The processing chamber 118 is provided with inlets 116 and 117 for supplying processing gas into the chamber. The type and composition of the processing gas supplied from inlets 116 and 117 vary depending on the type of material constituting the sample 120 and the desired processing shape.

[0022] The introduction section 116 is provided in the space between the dielectric window 114 and the shower plate 115. The processing gas from the introduction section 116 diffuses within this space, and the diffused processing gas is supplied upward to the stage 121 through multiple through holes in the shower plate 115. The introduction section 117 is provided in the space below the shower plate 115. The processing gas from the introduction section 117 is supplied upward to the stage 121 without passing through the shower plate 115.

[0023] The plasma processing apparatus 100 comprises a waveguide, a light-emitting monitor 111, an electric field generating unit 112 such as a magnetron oscillator, and a solenoid coil 113. The waveguide is positioned above the dielectric window 114, and the electric field generating unit 112 is provided at one end of the waveguide. The electric field generating unit 112 can oscillate and output a microwave electric field. The microwave electric field is supplied to the inside of the processing chamber 118 via the waveguide. The solenoid coil 113 is provided around the waveguide and the processing chamber 118 and is used as a magnetic field generating means. As the electric field, for example, microwaves with a frequency of 2.45 GHz are used. The magnetic field density when such microwaves are used is, for example, 875 G.

[0024] Charged particles, such as atoms or molecules in the processing gas, are excited by the microwave electric field and ionized or dissociated. This generates plasma inside the processing chamber 118. The sample 120, placed on the stage 121, is etched by the plasma.

[0025] The light emission monitor 111 monitors the light emission state of the plasma inside the processing chamber 118, or the etching state of the sample 120. Although not shown in the diagram, the plasma processing apparatus 100 is also equipped with a temperature measuring instrument to measure the temperature of the inner wall of the processing chamber 118.

[0026] The control unit 122 is a processing unit that includes a semiconductor integrated circuit, such as a CPU. Although some parts are not shown in the diagram, the control unit 122 is electrically connected to the stage 121, high-frequency power supply 123, electric field generator 112, solenoid coil 113, vacuum exhaust device 108, and vacuum exhaust device 109, and controls their operation. The control unit 122 also controls the supply of processing gas from the gas supply unit, the control of the gas flow rate regulator, and the opening and closing operation of each valve, as will be described later.

[0027] <Regarding the supply and exhaust routes of the processing gas> The following describes the supply and exhaust gas routes of the plasma processing apparatus 100. The plasma processing apparatus 100 includes bypass line G1, bypass line G2, supply line G3, exhaust line G4, supply line G5, individual supply line G6, individual supply line G7, individual exhaust line G8, and individual exhaust line G9 as gas lines (piping) connected to the inside of the processing chamber 118.

[0028] As shown in Figure 1, the exhaust line G4 is connected to the inside of the processing chamber 118 to exhaust the processing gas from inside the processing chamber 118. The exhaust line G4 is equipped with valve V1, vacuum evacuation device 109, valve V6, vacuum evacuation device 108, and valve V5. Vacuum evacuation device 108 is, for example, a roughing pump. Vacuum evacuation device 109 is capable of evacuating to a higher vacuum than vacuum evacuation device 108 and is, for example, a turbomolecular pump. Valve V1 is located between the processing chamber 118 and vacuum evacuation device 109. Valve V6 is located between vacuum evacuation device 108 and vacuum evacuation device 109.

[0029] The supply line G3 is connected to the inside of the processing chamber 118 and to the inlet 116 in order to supply processing gas into the processing chamber 118. A pressure vacuum gauge 521 is provided on the supply line G3. The pressure vacuum gauge 521 can measure the pressure inside the supply line G3. The bypass line G2 is connected to the supply line G3 and the exhaust line G4. A valve V4 is provided on the bypass line G2.

[0030] Valve V3A is located in the supply line G3, between the point where the bypass line G2 connects to the supply line G3 and the processing chamber 118. Valve V5 is located between the point where the bypass lines G1 and G2 connect to the exhaust line G4 and the vacuum exhaust device 108.

[0031] The gas supply unit 106 supplies inert gas as the processing gas. The individual supply line G6 is connected to the gas supply unit 106 and the supply line G3. The individual supply line G6 is equipped with valves V101 and V301. Valve V301 is located closer to the gas supply unit 106 than valve V101.

[0032] The individual exhaust line G8 is connected to the section of the individual supply line G6 located between valves V101 and V301. Valve V201 is provided in the individual exhaust line G8. The bypass line G1 is connected to the exhaust line G4 and the individual exhaust line G8.

[0033] The gas flow regulator 501 is installed in the individual supply line G6 and is located between valve V101 and valve V301. The individual exhaust line G8 is connected to the section of the individual supply line G6 located between the gas flow regulator 501 and valve V301. The gas flow regulator 501 can adjust the flow rate of the processing gas supplied to the individual supply line G6. The processing gas passing through the individual exhaust line G8 is supplied to the bypass line G1 without passing through the gas flow regulator 501.

[0034] The gas supply unit 107 supplies a gas different from the inert gas as a processing gas. Such gases are, for example, low vapor pressure gases or highly corrosive gases, which are gases produced by vaporizing liquid raw materials. Individual supply line G7 is connected to the gas supply unit 107 and supply line G3. Individual supply line G7 is equipped with valves V119 and V319. Valve V319 is located closer to the gas supply unit 107 than valve V119.

[0035] The individual exhaust line G9 is connected to the section of the individual supply line G7 located between valves V119 and V319. Valve V219 is provided in the individual exhaust line G9. The individual exhaust line G9 is connected to the bypass line G1.

[0036] The gas flow regulator 519 is installed in the individual supply line G7 and is located between valve V119 and valve V319. The individual exhaust line G9 is connected to the section of the individual supply line G7 located between the gas flow regulator 519 and valve V319. The gas flow regulator 519 can adjust the flow rate of the processing gas supplied to the individual supply line G7. The processing gas passing through the individual exhaust line G9 is supplied to the bypass line G1 without passing through the gas flow regulator 519.

[0037] The supply line G5 is connected to the inside of the processing chamber 118 and to the inlet 117 in order to supply processing gas into the processing chamber 118. The supply line G5 is also connected to the bypass line G2. A valve V3B is provided on the supply line G5.

[0038] The individual supply line G6 is also provided with a supply path that supplies processing gas into the processing chamber 118 via the bypass line G2, the supply line G5, and the introduction section 117. The supply of processing gas to such a supply path is controlled by a valve V401 provided on the individual supply line G6.

[0039] The individual supply line G7 is also provided with a supply path that supplies processing gas into the processing chamber 118 via the bypass line G2, supply line G5, and introduction section 117. The supply of processing gas to such a supply path is controlled by a valve V419 provided on the individual supply line G7.

[0040] The pressure inside the processing chamber 118 is adjusted by balancing the flow rate or velocity of the processing gas supplied from supply lines G3 and G5 with the flow rate or velocity of the exhaust gas from vacuum evacuation devices 108 and 109 via valve V1. This balancing is performed by the control unit 122. For example, by increasing or decreasing the opening of valve V1 in response to a command signal from the control unit 122, the pressure inside the processing chamber 118 is adjusted to the optimal pressure for plasma generation.

[0041] As shown in Figure 2, the plasma processing apparatus 100 may be configured such that the supply of processing gas to the processing chamber 118 is limited to the inlet 116 only. Therefore, the supply line G5, the supply path via valve V401, and the supply path via valve V419 may be omitted.

[0042] Furthermore, as shown in Figure 1, multiple gas supply units 106, individual supply lines G6, individual exhaust lines G8, gas supply unit 107, individual supply lines G7, and individual exhaust lines G9 may each be provided in multiple units. In addition, multiple lines may be provided with multiple valves equivalent to valves V101, V301, V401, V201, V119, V319, V419, and V219, such as valves V102, V302, V402, V202, V120, V320, V420, and V220. In addition, multiple lines may be provided with multiple gas flow regulators equivalent to gas flow regulators 501 and 519, such as gas flow regulators 502 and 520.

[0043] In the following, for the sake of simplicity, we will describe one gas supply unit 106, one individual supply line G6, one individual exhaust line G8, one gas supply unit 107, one individual supply line G7, one individual exhaust line G9, and one valve V101, V301, V401, V201, V119, V319, V419, V219.

[0044] <Regarding plasma treatment methods (exhaust means)> Steps S1 to S8 included in the plasma treatment method performed using the plasma treatment apparatus 100 will be explained below with reference to Figures 3 to 9. The plasma treatment apparatus 100 is equipped with an exhaust means for exhausting the gas line connected to the inside of the treatment chamber 118 during periods when plasma treatment is not being performed on the sample 120 in the treatment chamber 118 (idling period). Steps S2 to S8 of steps S1 to S8 correspond to the exhaust means.

[0045] Furthermore, Figures 4 to 9 show the open / closed states of each valve in steps S1 to S8 shown in Figure 3, respectively.

[0046] As shown in Figure 4, in step S1, the sample 120 is placed on the stage 121 and plasma treatment is performed on the sample 120. The control unit 122 drives the stage 121, the high-frequency power supply 123, the electric field generator 112, and the solenoid coil 113 and individually controls the open and closed state of each valve. Valves V1, V6, V3A, V3B, V101, V401, V301, V119, V419, and V319 are opened, and valves V4, V5, V2, V201, and V219 are closed.

[0047] A processing gas is supplied into the processing chamber 118, generating plasma, which then performs plasma treatment on the sample 120. During this process, an inert gas from the gas supply unit 106 and a low vapor pressure gas or a highly corrosive gas from the gas supply unit 107 are supplied into the processing chamber 118 as processing gases.

[0048] After the plasma treatment of sample 120 is completed, sample 120 is transported outside the treatment chamber 118. The period after that until the plasma treatment of the next sample 120 (next step S1) begins is an idling period. Steps S2 to S8 are performed during the idling period.

[0049] As shown in Figure 5, in step S2, valves V1, V6, V3A, V3B, V119, V419, and V319 are closed, and valves V4, V2, and V201 are opened. This fills the individual supply line G6, supply line G3, individual exhaust line G8, bypass line G1, and bypass line G2 with inert gas.

[0050] As shown in Figure 6, in step S3, when the pressure in the pressure vacuum gauge 521 reaches a predetermined pressure, valves V101, V401, and V201 are closed to stop the supply of inert gas.

[0051] As shown in Figure 7, in step S4, valves V5, V119, V419, and V219 are opened to activate the vacuum evacuation device 108. This evacuates the inside of each of the individual supply lines G7, G3, G9, G1, G2, and G4.

[0052] As described above, if low vapor pressure gas or highly corrosive gas is present in the gas line connected to the processing chamber 118 before plasma processing, the liquefied low vapor pressure gas or highly corrosive gas will cause foreign matter to be generated. Before step S4, low vapor pressure gas or highly corrosive gas is present in the space surrounded by valves V319, V119, V419, and V219, but the path from valves V319, V119, V419, and V219 to valve V5 is filled with inert gas. In step S4, by exhausting from valves V119, V419, and V219 toward the vacuum exhaust device 108, it is possible to prevent the gas in the enclosed space from flowing back.

[0053] As shown in Figure 8, in step S5, valves V4, V5, V2, V301, and V219 are closed, valves V1, V6, V3A, and V3B are opened, and the vacuum evacuation devices 108 and 109 are activated. This evacuates the inside of the individual supply line G7, supply line G3, bypass line G2, and processing chamber 118, respectively.

[0054] Since both vacuum evacuation devices 108 and 109 are used to perform exhaust through the processing chamber, in step S5, exhaust can be performed to a lower pressure than in step S4. Therefore, the accumulation of low vapor pressure gas or highly corrosive gas inside the gas line connected to the inside of the processing chamber 118 can be suppressed more reliably.

[0055] Furthermore, the pressure in the processing chamber 118 after step S5 is lower than the pressure in the processing chamber 118 when the sample 120 is subjected to plasma treatment in step S1.

[0056] As shown in Figure 9, in step S6, valves V119 and V419 are closed, valves V101, V301 and V401 are opened, and the vacuum evacuation devices 108 and 109 are driven. In this state, an inert gas is supplied into the processing chamber 118, and plasma is generated inside the processing chamber 118, thereby raising the temperature inside the processing chamber 118.

[0057] During steps S2 to S5, no plasma generation is performed, so the temperature inside the processing chamber 118 gradually decreases. If plasma processing is performed when the temperature inside the processing chamber 118 has decreased, a long discharge will be required to raise the temperature to the normal plasma processing temperature. Therefore, there is a risk that the throughput will deteriorate.

[0058] In step S6, plasma is generated by pulse-modulated high-frequency power to maintain the temperature inside the processing chamber 118 at a predetermined temperature, and this plasma discharge is used for heat retention. Since sufficient exhaust is performed from the gas line connected to the processing chamber 118 in steps S2 to S5, even when heat retention is performed in step S6, the generation of foreign matter caused by low vapor pressure gas or highly corrosive gas inside the processing chamber 118 can be suppressed. In addition, in the heat retention treatment in step S6, plasma is generated using only inert gas, without using low vapor pressure gas or highly corrosive gas that can cause the generation of foreign matter.

[0059] After step S6, plasma treatment of the next sample 120 (next step S1) may be started. However, the idling period may be long. In that case, assuming that some gas leakage will occur from valve V319, steps S7 and S8 may be performed as a countermeasure. That is, steps S5 and S6 may be repeated until plasma treatment of the next sample 120 (next step S1) is started. This suppresses the generation of foreign matter even if the idling period is long, and maintains the temperature inside the processing chamber 118 at a predetermined temperature.

[0060] Although the present invention has been specifically described above based on the embodiments described above, the present invention is not limited to the embodiments described above and can be modified in various ways without departing from the spirit of the invention. [Explanation of Symbols]

[0061] 100 Plasma Processing Equipment 106 Gas supply unit for inert gas 107 Gas supply unit for low vapor pressure gases or highly corrosive gases 108, 109 Vacuum exhaust system 111 Light-emitting monitor 112 Electric field generation section 113 Solenoid coil 114. Warranty window 115 Shower Plate 116, 117 Introduction 118 Processing Room 119 Vacuum container 120 samples 121 stages 122 Control Unit 123 High frequency power supply G1, G2 Bypass Line G3 supply line G4 Exhaust Line G5 supply line G6, G7 Individual Supply Lines G8, G9 Individual Exhaust Lines V1, V2, V3A, V3B, V4, V5, V6, V101, V102, V119, V120, V201, V202, V219, V220, V301, V302, V319, V320, V401, V402, V419, V420 valve 501, 502, 519, 520 Gas flow regulators 521 Pressure Vacuum Gauge

Claims

1. A processing chamber for performing plasma treatment on a sample, In order to supply processing gas into the processing chamber, a supply line connected to the inside of the processing chamber, To exhaust the processing gas from inside the processing chamber, an exhaust line is connected to the inside of the processing chamber, A first vacuum exhaust device provided in the exhaust line, A first valve provided in the exhaust line and located between the processing chamber and the first vacuum exhaust device, A first gas supply unit for supplying an inert gas as the processing gas, A second gas supply unit for supplying a second gas different from the inert gas as the processing gas, The first gas supply unit and the first individual supply line connected to the supply line, A second valve provided in the first individual supply line, A third valve is provided in the first individual supply line and is located closer to the first gas supply section than the second valve, A first individual exhaust line connected to the portion of the first individual supply line located between the second valve and the third valve, A fourth valve provided in the first individual exhaust line, The second gas supply unit and the second individual supply line connected to the supply line, A fifth valve provided in the second individual supply line, A sixth valve is provided in the second individual supply line and is located closer to the second gas supply section than the fifth valve, A second individual exhaust line connected to the portion of the second individual supply line located between the fifth valve and the sixth valve, A seventh valve provided in the second individual exhaust line, The exhaust line, the first individual exhaust line, and the first bypass line connected to the second individual exhaust line, A second bypass line connected to the supply line and the exhaust line, An eighth valve is provided in the supply line and is located between the point where the second bypass line is connected to the supply line and the processing chamber, A ninth valve is provided in the exhaust line and is located between the point where the first bypass line and the second bypass line are connected to the exhaust line and the first vacuum exhaust device, A plasma processing apparatus equipped with the following features.

2. In the plasma processing apparatus according to claim 1, The processing chamber is further provided with exhaust means for exhausting the gas line connected to the inside of the processing chamber during periods when the plasma treatment is not being performed on the sample. The exhaust means is (a) A step of filling the inside of the first individual supply line, the supply line, the first individual exhaust line, the first bypass line, and the second bypass line with the inert gas by closing the first valve, the fifth valve, the sixth valve, the seventh valve, the eighth valve, and the ninth valve, and opening the second valve, the third valve, and the fourth valve. (b) After step (a), a step of closing the second valve and the fourth valve, (c) After step (b), open the fifth valve, the seventh valve and the ninth valve and drive the first vacuum exhaust device to exhaust the inside of each of the second individual supply line, the supply line, the second individual exhaust line, the first bypass line, the second bypass line and the exhaust line. A plasma processing apparatus having

3. In the plasma processing apparatus according to claim 2, A second vacuum evacuation device is provided in the exhaust line, located between the processing chamber and the first valve, and capable of evacuating to a higher vacuum than the first vacuum evacuation device. A tenth valve is provided in the exhaust line and is located between the processing chamber and the second vacuum exhaust device, Furthermore, The exhaust means is (d) After step (c), the steps of closing the seventh valve and the ninth valve, opening the first valve, the eighth valve and the tenth valve, and driving the first vacuum exhaust device and the second vacuum exhaust device to exhaust the inside of the second individual supply line, the supply line, the second bypass line and the processing chamber, A plasma processing apparatus further possessing the following.

4. In the plasma processing apparatus according to claim 3, A plasma processing apparatus wherein the pressure in the processing chamber after step (d) is lower than the pressure in the processing chamber when the plasma treatment is performed on the sample.

5. In the plasma processing apparatus according to claim 3, The exhaust means is (e) After step (d), the fifth valve is closed, the second valve is opened, and the first vacuum exhaust device and the second vacuum exhaust device are driven, and the inert gas is supplied into the processing chamber to generate plasma inside the processing chamber, thereby raising the temperature inside the processing chamber. A plasma processing apparatus further possessing the following.

6. In the plasma processing apparatus according to claim 5, The exhaust means is (f) A step in which the steps of (d) and (e) are repeated after the step of (e), A plasma processing apparatus further possessing the following.

7. In the plasma processing apparatus according to claim 1, A first gas flow regulator is provided in the first individual supply line and is located between the second valve and the third valve, A second gas flow regulator is provided in the second individual supply line and is located between the fifth valve and the sixth valve, Furthermore, The first individual exhaust line is connected to the portion of the first individual supply line located between the first gas flow regulator and the third valve. The plasma processing apparatus is connected to the second individual exhaust line at a point in the second individual supply line located between the second gas flow regulator and the sixth valve.

8. In the plasma processing apparatus according to claim 1, A plasma processing apparatus further comprising a plurality of first gas supply units, a plurality of second gas supply units, a plurality of first individual supply lines, a plurality of second valves, a plurality of third valves, a plurality of second individual supply lines, a plurality of fourth valves, a plurality of fifth valves, a plurality of first individual exhaust lines, a plurality of sixth valves, a plurality of second individual exhaust lines, and a plurality of seventh valves.

9. In the plasma processing apparatus according to claim 1, The plasma processing apparatus wherein the second gas is a low vapor pressure gas or a highly corrosive gas.

10. In the plasma processing apparatus according to claim 1, The second gas is a plasma processing apparatus, which is a gas produced by vaporizing a liquid raw material.

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