Template, imprint method, and method for manufacturing a semiconductor device

Abstract

The goal is to reduce the gaps between the imprint material layers formed in multiple shot regions. [Solution] The template comprises a mesa. The mesa has a pattern surface including an imprint pattern, a first surface provided on a first edge in a first direction of the mesa and having a first height relative to the top surface of the pattern surface, a second surface provided on a second edge in a second direction perpendicular to the first direction of the mesa and having a second height relative to the top surface of the pattern surface, a third surface provided on a third edge opposite the second edge in the second direction of the mesa and having a third height higher than the first and second heights relative to the top surface, a fourth surface provided on a fourth edge opposite the first edge in the first direction of the mesa and having a fourth height higher than the first and second heights relative to the top surface, and a fifth surface provided on a first corner adjacent to the third and fourth edges of the mesa and having a fifth height higher than the third and fourth heights relative to the top surface.

Description

Technical Field

[0001] Embodiments of the present invention relate to a template, an imprint method, and a method for manufacturing a semiconductor device.

Background Art

[0002] In a method for manufacturing a semiconductor device, a technique for forming a fine pattern using nanoimprint lithography (NIL) is known.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0004] The problem to be solved by the invention of the embodiments is to reduce the gaps in the imprint material layer formed in a plurality of shot regions.

Means for Solving the Problems

[0005] The template of the embodiment comprises a mesa. The mesa has a pattern surface including an imprint pattern; a first surface provided on a first edge in a first direction of the mesa and having a first height relative to the top surface of the pattern surface; a second surface provided on a second edge in a second direction perpendicular to the first direction of the mesa and having a second height relative to the top surface of the pattern surface; a third surface provided on a third edge opposite the second edge in the second direction of the mesa and having a third height higher than the first and second heights relative to the top surface; a fourth surface provided on a fourth edge opposite the first edge in the first direction of the mesa and having a fourth height higher than the first and second heights relative to the top surface; and a fifth surface provided on a first corner adjacent to the third and fourth edges of the mesa and having a fifth height higher than the third and fourth heights relative to the top surface. [Brief explanation of the drawing]

[0006] [Figure 1] This is a schematic diagram illustrating an example of template structure. [Figure 2] This is a schematic diagram illustrating an example of template structure. [Figure 3] This is a schematic diagram illustrating an example of an imprinting method. [Figure 4] This is a schematic diagram illustrating an example of an imprinting method. [Figure 5] This is a schematic plan view illustrating an example of the surface structure of a mesa MS. [Figure 6] This is a schematic plan view illustrating another example of the surface structure of a mesa MS. [Figure 7] This is a schematic cross-sectional view of a part of a mesa MS in the Z-axis direction. [Figure 8] This is a schematic cross-sectional view of a part of a mesa MS in the Z-axis direction. [Figure 9] This is a schematic cross-sectional view of a part of a mesa MS in the Z-axis direction. [Figure 10] This is a schematic cross-sectional view of a part of a mesa MS in the Z-axis direction. [Figure 11] This is a schematic cross-sectional view of a part of a mesa MS in the Z-axis direction. [Figure 12] It is a schematic diagram for explaining an example of an imprint method. [Figure 13] It is a schematic diagram for explaining an imprint example for the shot area 110a. [Figure 14] It is a schematic diagram for explaining an imprint example for the shot area 110a. [Figure 15] It is a schematic diagram for explaining an imprint example for the shot area 110a. [Figure 16] It is a schematic diagram for explaining an imprint example for the shot area 110a. [Figure 17] It is a schematic diagram for explaining an imprint example for the shot area 110b. [Figure 18] It is a schematic diagram for explaining an imprint example for the shot area 110b. [Figure 19] It is a schematic diagram for explaining an imprint example for the shot area 110b. [Figure 20] It is a schematic diagram for explaining an imprint example for the shot area 110b. [Figure 21] It is a schematic diagram for explaining an imprint example for the shot area 110c. [Figure 22] It is a schematic diagram for explaining an imprint example for the shot area 110c. [Figure 23] It is a schematic diagram for explaining an imprint example for the shot area 110c. [Figure 24] It is a schematic diagram for explaining an imprint example for the shot area 110c. [Figure 25] It is a schematic diagram for explaining an imprint example for the shot area 110d. [Figure 26] It is a schematic diagram for explaining an imprint example for the shot area 110d. [Figure 27] It is a schematic diagram for explaining an imprint example for the shot area 110d. [Figure 28] It is a schematic diagram for explaining an imprint example for the shot region 110d. [Figure 29] It is a schematic cross-sectional view in the Z-axis direction of a part of the mesa MS in the first modification example. [Figure 30] It is a schematic cross-sectional view in the Z-axis direction of a part of the mesa MS in the first modification example. [Figure 31] It is a schematic cross-sectional view in the Z-axis direction of a part of the mesa MS in the first modification example. [Figure 32] It is a schematic cross-sectional view in the Z-axis direction of a part of the mesa MS in the first modification example. [Figure 33] It is a schematic cross-sectional view in the Z-axis direction of a part of the mesa MS in the first modification example. [Figure 34] It is a schematic diagram for explaining an imprint example for the shot region 110a in the first modification example. [Figure 35] It is a schematic diagram for explaining an imprint example for the shot region 110a in the first modification example. [Figure 36] It is a schematic diagram for explaining an imprint example for the shot region 110a in the first modification example. [Figure 37] It is a schematic diagram for explaining an imprint example for the shot region 110b in the first modification example. [Figure 38] It is a schematic diagram for explaining an imprint example for the shot region 110b in the first modification example. [Figure 39] It is a schematic diagram for explaining an imprint example for the shot region 110b in the first modification example. [Figure 40] It is a schematic diagram for explaining an imprint example for the shot region 110c in the first modification example. [Figure 41] It is a schematic diagram for explaining an imprint example for the shot region 110c in the first modification example. [Figure 42] It is a schematic diagram for explaining an imprint example for the shot region 110c in the first modification example. [Figure 43] This is a schematic diagram illustrating an example of imprinting on the shot area 110d in the first modified example. [Figure 44] This is a schematic diagram illustrating an example of imprinting on the shot area 110d in the first modified example. [Figure 45] This is a schematic diagram illustrating an example of imprinting on the shot area 110d in the first modified example. [Figure 46] This is a schematic plan view illustrating an example of the surface structure of a mesa MS in the second modified example. [Figure 47] This is a schematic plan view illustrating another example of the surface structure of a mesa MS in the second modified example. [Figure 48] This is a schematic diagram illustrating an example of imprinting on the shot area 110d. [Figure 49] This is a schematic diagram illustrating an example of imprinting on the shot area 110d. [Figure 50] This is a schematic diagram illustrating an example of imprinting on the shot area 110d. [Figure 51] This is a schematic diagram illustrating an example of imprinting on the shot area 110d. [Figure 52] This is a schematic plan view illustrating an example of the surface structure of a mesa MS. [Figure 53] This is a schematic diagram illustrating an example of imprinting on the shot area 110a in the third modified example. [Figure 54] This is a schematic diagram illustrating an example of imprinting on the shot area 110a in the third modified example. [Figure 55] This is a schematic diagram illustrating an example of imprinting on the shot area 110a in the third modified example. [Figure 56] This is a schematic diagram illustrating an example of imprinting on the shot region 110b in the third modified example. [Figure 57] This is a schematic diagram illustrating an example of imprinting on the shot region 110b in the third modified example. [Figure 58] This is a schematic diagram illustrating an example of imprinting on the shot region 110b in the third modified example. [Figure 59] This is a schematic diagram illustrating an example of imprinting on the shot area 110c in the third modified example. [Figure 60] This is a schematic diagram illustrating an example of imprinting on the shot area 110c in the third modified example. [Figure 61] This is a schematic diagram illustrating an example of imprinting on the shot area 110c in the third modified example. [Figure 62] This is a schematic diagram illustrating an example of imprinting on the shot area 110d in the third modified example. [Figure 63] This is a schematic diagram illustrating an example of imprinting on the shot area 110d in the third modified example. [Figure 64] This is a schematic diagram illustrating an example of imprinting on the shot area 110d in the third modified example. [Figure 65] This is a schematic cross-sectional diagram illustrating an example of a semiconductor device manufacturing method. [Figure 66] This is a schematic cross-sectional diagram illustrating an example of a semiconductor device manufacturing method. [Modes for carrying out the invention]

[0007] The embodiments will be described below with reference to the drawings. The relationship between the thickness and planar dimensions of each component shown in the drawings, the ratio of the thicknesses of each component, etc., may differ from the actual product. Also, in the embodiments, substantially identical components are denoted by the same reference numerals and their descriptions are omitted as appropriate.

[0008] (Imprint method) Figures 1 and 2 are schematic diagrams illustrating examples of template structures used in a pattern formation method using NIL (hereinafter referred to as the imprint method). Figure 1 is a perspective schematic diagram showing an example of template TP structure. Figure 2 is a cross-sectional schematic diagram showing an example of template TP structure, showing a part of the cross-section along the line segment A1-A2 shown in Figure 1. Figures 1 and 2 show the X, Y, and Z axes of the template TP. The X, Y, and Z axes extend in directions perpendicular to each other. The Z axis direction is the thickness direction of the template TP.

[0009] The template TP comprises a substrate 1 having a surface 1a including a mesa MS and a surface 1b including a recess CO. The mesa MS has an imprint pattern such as a device pattern. The imprint pattern has at least one of a recess and a protrusion. The substrate 1 is light-transmitting. The substrate 1 can be formed using, for example, quartz glass.

[0010] Figures 3 and 4 are schematic diagrams illustrating an example of an imprint method. In the imprint method, a template TP is pressed onto an imprint material layer 102, such as an ultraviolet-curing resin, formed on the surface of an object 100. This brings the imprint pattern of the mesa MS into contact with the surface of the imprint material layer 102, forming the imprint material layer 102. The imprint material layer 102 is then cured by irradiating it with light such as ultraviolet light through the template TP, transferring the imprint pattern to the imprint material layer 102. After that, the template TP is detached from the imprint material layer 102.

[0011] The object 100 is, for example, a workpiece film, and is a laminate formed by stacking multiple films on a substrate such as a silicon wafer. The multiple films include conductive films and / or insulating films. The laminate is, for example, a device wafer (semiconductor substrate) in the process of manufacturing a semiconductor device. Examples of semiconductor devices include semiconductor memory devices such as NAND flash memory, electrical devices having microstructures such as micro-electromechanical systems (MEMS), and magnetic recording media. The configuration of the object 100 is not limited to the above configuration.

[0012] The object 100 has a surface 100a that includes a shot region 110. The shot region 110 is a unit area into which a pattern is transferred at once by pressing the template TP onto the imprint material layer 102 in a single imprint.

[0013] The imprint material layer 102 can be formed, for example, by applying the imprint material to the shot area 110 using an inkjet method. The imprint material includes, for example, a photocurable resin such as a photoresist.

[0014] As shown in Figure 3, when imprinting in multiple shot regions 110, it is necessary to form a space S between adjacent shot regions 110. When a space S exists, for example, when etching the object 100 using the imprint material layer as an etching mask, the portion overlapping with the space S may be etched more than necessary, resulting in the unnecessary exposure of conductive layers such as wiring on the object 100. For this reason, it is preferable that the space S be as small as possible. However, if imprinting is performed in adjacent shot regions 110 without forming a space S, as shown in Figure 4, the template TP and another imprint material layer 102 may overlap and come into contact with the hardened imprint material layer 102 on the previously imprinted shot region 110. This can cause the template TP to tilt, leading to damage to the template TP or defects in pattern formation.

[0015] In contrast, the imprint method of this embodiment uses a template TP having multiple surfaces of different heights on the periphery of the mesa MS to perform imprinting. The imprint method of this embodiment will be described below.

[0016] Figure 5 is a schematic plan view illustrating an example of the surface structure of a mesa MS. Figure 5 shows the X-axis, Y-axis, and Z-axis directions of the mesa MS. The X-axis, Y-axis, and Z-axis directions are perpendicular to each other. The Z-axis direction is the thickness direction of the template TP. In Figure 5, the outer portion of the template surface 1a is omitted.

[0017] The surface of the mesa MS includes corner C1, corner C2, corner C3, corner C4, and edges E1, E2, E3, and E4.

[0018] Corners C1, C2, C3, and C4 are located at the four corners of the surface of the mesa MS. Corners C1, C2, C3, and C4 may have a chamfered shape oblique to the X-axis and Y-axis, or they may be rounded. Corner C1 is adjacent to one end of edge E3 and one end of edge E4. Corner C2 is adjacent to one end of edge E1 and the other end of edge E3. Corner C3 is adjacent to the other end of edge E1 and one end of edge E2. Corner C4 is adjacent to the other end of edge E2 and the other end of edge E4.

[0019] Edges E1, E2, E3, and E4 are located on the periphery of the surface of the mesa MS. Edge E1 is located at one end of the mesa MS in the Y-axis direction. Edge E1 extends, for example, from angle C2 to angle C3. Edge E2 is located at one end of the mesa MS in the X-axis direction. Edge E2 extends, for example, from angle C3 to angle C4. Edge E3 is located at the other end of the mesa MS in the X-axis direction (opposite edge E2). Edge E3 extends, for example, from angle C1 to angle C2. Edge E4 is located at the other end of the mesa MS in the Y-axis direction (opposite edge E1). Edge E4 extends, for example, from angle C1 to angle C4.

[0020] Furthermore, the surface of the mesa MS has a pattern surface PT and surfaces F1, F2, F3, F4, and F5. Surfaces F1, F2, F3, F4, and F5 are provided around the pattern surface PT. The pattern surface PT may be surrounded by surfaces F1, F2, F3, F4, and F5. The periphery of the pattern surface PT may have a kerf region that does not have an imprint pattern.

[0021] The pattern surface PT includes an imprint pattern transferred by an imprint method. The number, position, and shape of the imprint pattern are not particularly limited. The imprint pattern can be formed, for example, by forming at least one recess that is recessed in the Z-axis direction and a convex portion that protrudes in the Z-axis direction.

[0022] Surface F1 is provided on edge E1. Surface F1 extends along edge E1 from corner C2 to corner C3 between corners C2 and C3. The width W1 of surface F1 in the Y-axis direction is not particularly limited, but is, for example, 0.1 μm or more and 10 μm or less.

[0023] Surface F2 is provided on edge E2. Surface F2 extends along edge E2 from corner C3 to corner C4 between corners C3 and C4. Surface F2, together with surface F1, forms a single continuous surface. The width W2 of surface F2 in the Y-axis direction is not particularly limited, but is, for example, 0.1 μm or more and 10 μm or less.

[0024] Surface F3 is provided on edge E3. Surface F3 extends along edge E3 from one end of surface F1 to one end of surface F5 between corners C1 and C2. The width W3 of surface F3 in the Y-axis direction is not particularly limited, but is, for example, 0.1 μm or more and 10 μm or less.

[0025] Surface F4 is provided on edge E4. Surface F4 extends along edge E4 from one end of surface F2 to the other end of surface F5 between corners C1 and C4. The width W4 of surface F4 in the Y-axis direction is not particularly limited, but is, for example, 0.1 μm or more and 10 μm or less.

[0026] Surface F5 is provided at corner C1. Surface F5 extends along edge E3 from corner C1 to one end of surface F3, and extends along edge E4 from each C1 to one end of surface F4. Surface F5 has widths W3 and W4, respectively.

[0027] The surface structure of a mesa MS is not limited to the structure shown in Figure 5. Figure 6 is a schematic plan view illustrating another example of the surface structure of a mesa MS. Figure 6 differs from Figure 5 in that it has a surface F6 near angle C2 and a surface F7 near angle C4. The differences from Figure 5 will be explained below, and for other parts, the explanation of Figure 5 can be appropriately referred to.

[0028] Surface F1 extends along edge E1 from one end of surface F6 to corner C3, between corners C2 and C3.

[0029] Face F2 extends along edge E2 from corner C3 to one end of face F7, between corners C3 and C4.

[0030] Surface F3 extends along edge E3 from one end of surface F5 to the other end of surface F6 between angles C1 and C2.

[0031] Surface F4 extends along edge E4 from the other end of surface F5 to the other end of surface F7 between corners C1 and C4.

[0032] Surface F6 is provided at corner C2. Surface F6 extends along edge E1 from corner C2 to one end of surface F1, and extends along edge E3 from each C2 to the other end of surface F3.

[0033] Surface F7 is provided at corner C4. Surface F7 extends along edge E2 from corner C4 to one end of surface F2, and extends along edge E4 from each C4 to the other end of surface F4.

[0034] Figures 7 to 11 are enlarged views showing a portion of the mesa MS pattern shown in Figure 2, with the Z-direction reversed compared to Figure 2. Figure 7 is a schematic cross-sectional view of a portion of the mesa MS in the Z-axis direction. Figure 7 shows surface F1. Surface F1 has a height H1 relative to surface TS of the pattern surface PT. Surface TS is, for example, the uppermost surface of the pattern surface PT in Figure 2. The height H1 should be equal to or greater than the height of surface TS. The height H1 may also be lower than the height of surface BS provided in the recess D of the pattern surface PT relative to surface TS. Surface BS is, for example, the lowermost surface of the pattern surface PT in Figure 2. The height of recess D is not particularly limited, but is, for example, 30 nm to 100 nm. Recess D forms the imprint pattern after transfer.

[0035] Figure 8 is a schematic cross-sectional view of a part of the mesa MS in the Z-axis direction. Figure 8 shows surface F2. Surface F2 has a height H2 relative to surface TS. The height H2 does not need to be equal to or greater than the height of surface TS. The height H2 may also be lower than the height of surface BS provided in the recess D of the pattern surface PT relative to surface TS. For example, height H2 is the same as height H1.

[0036] Figure 9 is a schematic cross-sectional view of a portion of the mesa MS in the Z-axis direction. Figure 9 shows surface F3. Surface F3 has a height H3 relative to surface TS. Height H3 is higher than the height of surface TS. Height H3 may be the same height as surface BS relative to surface TS, or higher than surface BS.

[0037] Figure 10 is a schematic cross-sectional view of a portion of the mesa MS in the Z-axis direction. Figure 10 shows surface F4. Surface F4 has a height H4 relative to surface TS. Height H4 is higher than the height of surface TS. Height H4 may be the same height as surface BS relative to surface TS, or higher than surface BS. Height H4 is, for example, the same height as height H3.

[0038] Figure 11 is a schematic cross-sectional view of a portion of the mesa MS in the Z-axis direction. Figure 11 shows plane F5. Plane F5 has a height H5 relative to plane TS. Height H5 is higher than the height of plane TS and higher than heights H3 and H4, respectively. Height H5 may also be higher than the height of plane BS relative to plane TS.

[0039] The pattern surface PT, surfaces F1, F2, F3, F4, and F5 can be formed, for example, by dry etching using a mask, which involves etching the substrate 1 in the thickness direction.

[0040] If the surface of the mesa MS has the structure shown in Figure 6, the heights of surfaces F6 and F7 are the same as the height of surface TS.

[0041] Figure 12 is a schematic diagram illustrating an example of an imprint method using a template TP with a mesa MS as shown in Figure 5. Figure 12 shows the template TP and a portion of the surface 100a of the object to be imprinted 100.

[0042] Surface 100a has multiple shot regions 110, including shot region 110a, shot region 110b, shot region 110c, and shot region 110d. The multiple shot regions 110 are arranged along surface 100a. A "shot region" is a processing unit in which a pattern is transferred in a single imprint. The number of shot regions is not limited to the number shown in Figure 12.

[0043] Shot region 110b is adjacent to shot region 110a in the X-axis direction. Shot region 110c is adjacent to shot region 110a in the Y-axis direction. Shot region 110d is adjacent to shot region 110b in the Y-axis direction and adjacent to shot region 110c in the X-axis direction. Shot regions 110a, 110b, 110c, and 110d have a space S between them. The width of the space S is not particularly limited, but is for example 1 μm or more and 10 μm or less.

[0044] In NIL, an imprint device is used to perform imprinting, for example, in the order of shot area 110a, shot area 110b, shot area 110c, and shot area 110d. The template TP is used such that the surface of the mesa MS shown in Figure 5 faces each of the shot areas 110a, 110b, 110c, and 110d.

[0045] First, imprinting is performed on the shot region 110a. Figures 13, 14, 15, and 16 are schematic diagrams illustrating examples of imprinting on the shot region 110a. Figure 13 schematically shows the upper surface of the intersection 110x between shot regions 110a, 110b, 110c, and 110d. Figure 14 schematically shows the XZ cross-section of the intersection 110x at line segment A1-A2 in Figure 13. Figure 15 schematically shows the YZ cross-section of the intersection 110x at line segment B1-B2 in Figure 13. Figure 16 schematically shows an example of the three-dimensional shape of a part of the imprinted material layer 102a hardened in the shot region 110a.

[0046] In the example of imprinting on a shot region 110a, a template TP is pressed onto the imprint material layer 102a formed in the shot region 110a such that surfaces F1 and F2 overlap with space S when viewed from the Z-axis direction, the pattern surface PT is brought into contact with the imprint material layer 102a to form the imprint material layer 102a, and after the imprint material layer 102a is cured, the template TP is removed.

[0047] In Figure 14, the imprint material layer 102a contacts surface F1 and is molded according to its height H1. In Figure 15, the imprint material layer 102a contacts surface F2 and is molded according to its height H2. This allows for the formation of a hardened layer of the imprint material layer 102a. Furthermore, when using a template 1 having the surface shown in Figure 6, a hardened layer of the imprint material layer 102a having the shape shown in Figure 16 can be formed, for example. In Figure 16, the rectangular protrusions of the imprint material layer 102a have a pattern transferred to them that corresponds to the recesses D of the template 1, although this is not shown.

[0048] Although Figures 13, 14, and 15 show that the Y-axis end of plane F1 coincides with the Y-axis end of the space S between shot area 110a and shot area 110c when viewed from the Z-axis direction, and the X-axis end of plane F2 coincides with the Y-axis end of the space S between shot area 110a and shot area 110b when viewed from the Z-axis direction, plane F1 only needs to coincide with at least a portion of the space S between shot area 110a and shot area 110c when viewed from the Z-axis direction, and plane F2 only needs to coincide with at least a portion of the space S between shot area 110a and shot area 110b when viewed from the Z-axis direction.

[0049] Next, imprinting is performed on the shot region 110b. Figures 17, 18, 19, and 20 are schematic diagrams illustrating examples of imprinting on the shot region 110b. Figure 17 schematically shows the upper surface of the intersection 110x. Figure 18 schematically shows the XZ cross section of the intersection 110x at line segment A1-A2 in Figure 17. Figure 19 schematically shows the YZ cross section of the intersection 110x at line segment B1-B2 in Figure 17. Figure 20 schematically shows an example of the three-dimensional shape of a part of the hardened imprinted material layer 102b.

[0050] In the example of imprinting on the shot region 110b, the template TP is pressed against the imprint material layer 102b formed in the shot region 110b so that surfaces F1 and F3 overlap with space S in the Z-axis direction, the pattern surface PT is brought into contact with the imprint material layer 102b to form the imprint material layer 102b, and after the imprint material layer 102b is cured, the template TP is removed.

[0051] In Figure 18, the imprint material layer 102b contacts surface F1 and is molded according to its height H1. However, since a portion of the hardened imprint material layer 102a also contacts surface F1, the portion of the imprint material layer 102b that has the same height as the imprint material layer 102a is not laminated onto a portion of the imprint material layer 102a. In Figure 19, a portion of the imprint material layer 102b contacts surface F1 and is molded according to its height H1, so the portion of the imprint material layer 102b that has the same height as the imprint material layer 102a is not laminated onto a portion of the imprint material layer 102a. In addition, another portion of the imprint material layer 102b contacts surface F3 and is molded according to its height H3. In this way, a portion of the imprint material layer 102b is laminated onto a portion of the imprint material layer 102a in space S. This allows for the formation of a hardened layer of the imprint material layer 102b. Furthermore, when using template 1 having the surface shown in Figure 6, a hardened layer of imprint material layer 102b having the shape shown in Figure 20 can be formed, for example. In Figure 20, the rectangular protrusions of the imprint material layer 102b have a pattern transferred to them, corresponding to the recesses D of template 1, although this is not shown.

[0052] Although Figures 17, 18, and 19 show that the Y-axis end of plane F1 coincides with the Y-axis end of the space S between shot area 110b and shot area 110d when viewed from the Z-axis direction, and the X-axis end of plane F3 coincides with the X-axis end of the space S between shot area 110a and shot area 110b when viewed from the Z-axis direction, plane F1 only needs to coincide with at least a portion of the space S between shot area 110a and shot area 110b when viewed from the Z-axis direction, and plane F3 only needs to coincide with at least a portion of the space S between shot area 110a and shot area 110b when viewed from the Z-axis direction.

[0053] Next, imprinting is performed on the shot area 110c. Figures 21, 22, 23, and 24 are schematic diagrams illustrating examples of imprinting on the shot area 110c. Figure 21 schematically shows the upper surface of the intersection 110x. Figure 22 schematically shows the XZ cross section of the intersection 110x at line segment A1-A2 in Figure 21. Figure 23 schematically shows the YZ cross section of the intersection 110x at line segment B1-B2 in Figure 21. Figure 24 schematically shows an example of the three-dimensional shape of a part of the hardened imprint material layer 102c.

[0054] In the example of imprinting on the shot area 110c, the template TP is pressed against the imprint material layer 102c formed in the shot area 110c so that surfaces F2 and F4 overlap with space S in the Z-axis direction, the pattern surface PT is brought into contact with the imprint material layer 102c to form the imprint material layer 102c, and after the imprint material layer 102c is cured, the template TP is removed.

[0055] In Figure 22, the imprint material layer 102c contacts surface F4 and is molded according to its height H4. In Figure 23, the imprint material layer 102c contacts surface F2 and is molded according to its height H2, and also contacts surface F4 and is molded according to its height H4. As a result, in space S, a portion of the imprint material layer 102c is stacked to the same height as a portion of the imprint material layer 102b adjacent to a portion of the imprint material layer 102a. This allows for the formation of a hardened layer of the imprint material layer 102c. Furthermore, when using a template 1 having the surface shown in Figure 6, for example, a hardened layer of the imprint material layer 102c having the shape shown in Figure 24 can be formed. In Figure 24, the rectangular protrusions of the imprint material layer 102c have a pattern transferred to them that corresponds to the recesses D of the template 1, although this is not shown.

[0056] Note that in Figures 21, 22, and 23, the X-axis end of plane F2 is shown to coincide with the X-axis end of the space S between shot area 110c and shot area 110d when viewed from the Z-axis direction, and the Y-axis end of plane F4 is shown to coincide with the Y-axis end of the space S between shot area 110a and shot area 110c when viewed from the Z-axis direction. However, plane F2 only needs to coincide with at least a portion of the space S between shot area 110c and shot area 110d when viewed from the Z-axis direction, and plane F4 only needs to coincide with at least a portion of the space S between shot area 110c and shot area 110d when viewed from the Z-axis direction.

[0057] Next, imprinting is performed on the shot area 110d. Figures 25, 26, 27, and 28 are schematic diagrams illustrating examples of imprinting on the shot area 110d. Figure 25 schematically shows the upper surface of the intersection 110x. Figure 26 schematically shows the XZ cross section of the intersection 110x at line segment A1-A2 in Figure 23. Figure 27 schematically shows the YZ cross section of the intersection 110x at line segment B1-B2 in Figure 23. Figure 28 schematically shows an example of the three-dimensional shape of a part of the hardened imprint material layer 102d.

[0058] In the example of imprinting on a shot region 110d, a template TP is pressed against the imprint material layer 102d formed in the shot region 110d such that the surface F5 overlaps with the space S in the Z-axis direction, the pattern surface PT is brought into contact with the imprint material layer 102d to form the imprint material layer 102d, and after the imprint material layer 102d is cured, the template TP is removed.

[0059] In Figure 26, the imprint material layer 102d contacts surface F5 and is molded according to its height H5. In Figure 27, the imprint material layer 102d contacts surface F5 and is molded according to its height H5. As a result, in space S, a portion of the imprint material layer 102d is laminated onto a portion of the imprint material layer 102a, a portion of the imprint material layer 102b, and a portion of the imprint material layer 102c, respectively. This allows for the formation of a hardened layer of the imprint material layer 102d. Furthermore, when using a template 1 having the surface shown in Figure 6, for example, a hardened layer of the imprint material layer 102d having the shape shown in Figure 28 can be formed. In Figure 28, the rectangular protrusions of the imprint material layer 102d have a pattern transferred onto them that corresponds to the recesses D of the template 1, although this is not shown.

[0060] In addition, Figures 25, 26, and 27 show that the X-axis end of surface F5 overlaps with the X-axis end of the space S between shot region 110c and shot region 110d when viewed from the Z-axis direction, and the Y-axis end of surface F5 overlaps with the Y-axis end of the space S between shot region 110b and shot region 110d when viewed from the Z-axis direction. However, surface F5 only needs to overlap with at least a portion of the space S between shot region 110c and shot region 110d when viewed from the Z-axis direction, and surface F5 only needs to overlap with at least a portion of the space S between shot region 110b and shot region 110d when viewed from the Z-axis direction. Furthermore, if the imprint material is fluid, as shown in Figure 28, the portion of the imprint material layer 102d formed by surface F5 may be shifted in the X-axis or Y-axis direction relative to space S when viewed from the Z-axis direction, and may overlap with imprint material layers 102a, 102b, and 102c.

[0061] Furthermore, if the imprint material layers 102a, 102b, 102c, and 102d have the same height in adjacent portions, a gap of, for example, 1 μm to 2 μm may occur between each portion.

[0062] As described above, the imprint method of this embodiment uses a template TP that has surfaces F3 and F4 having a height higher than surfaces F1 and F2, and a surface F5 at corner C1 having an even higher height than surfaces F3 and F4, and performs imprinting in the order of shot area 110a, shot area 110b, shot area 110c, and shot area 110d, and when forming shot area 110b and shot area 110c, the template TP is brought into contact so that surface F3 or surface F4 overlaps with space S when viewed from the Z-axis direction, and when forming the imprint material layer 102d, the template TP is brought into contact so that surface F5 overlaps with space S when viewed from the Z-axis direction. As a result, the imprint material layers 102a, 102b, 102c, and 102d can be partially laminated without the template TP tilting. Therefore, the occurrence of gaps between the imprint material layers 102a, 102b, 102c, and 102d at the intersection 110x, particularly at its center, can be suppressed. As a result, for example, a separate process to fill the gaps afterward becomes unnecessary, thus reducing the manufacturing cost of semiconductor devices.

[0063] If the template TP does not have a surface F5, then at the intersection 110x, it is necessary to widen the space S so that the imprint patterns of imprint material layers 102a, 102b, 102c, and 102d do not overlap. However, widening the space S makes it easier for gaps to occur between the imprint material layers 102a, 102b, 102c, and 102d. If gaps occur, as mentioned above, for example, when etching the object 100 using the imprint material layer as an etching mask, the parts that overlap with space S will be etched more than necessary, resulting in the unnecessary exposure of conductive layers such as wiring on the object 100.

[0064] (First variation of the imprint method) A first modification of the imprint method will be described. In this first modification, the heights of faces F1, F2, F3, F4, and F5 differ from those of the example imprint method described above. The differences from the example imprint method described above will be explained below, and for other parts, the explanation of the example imprint method described above can be appropriately referred to.

[0065] Figures 29 to 33 are enlarged views showing a portion of the mesa MS pattern shown in Figure 2, with the Z-direction reversed compared to Figure 2. Figure 29 is a schematic cross-sectional view of a portion of the mesa MS in the Z-axis direction in the first modified example. Figure 29 shows a surface F1. Surface F1 has a height H1 relative to the surface TS of the pattern surface PT. Height H1 is higher than the height of surface TS. Height H1 may be the same height as or greater than the height of the bottom surface BS of the pattern surface PT relative to surface TS.

[0066] Figure 30 is a schematic cross-sectional view in the Z-axis direction of a portion of the mesa MS in the first modification. Figure 30 shows surface F2. Surface F2 has a height H2 relative to surface TS. Height H2 is higher than the height of surface TS. Height H2 may be the same height as or greater than the height of the bottom surface BS of the pattern surface PT relative to surface TS. Height H2 is, for example, the same height as height H1.

[0067] Figure 31 is a schematic cross-sectional view in the Z-axis direction of a portion of the mesa MS in the first modification. Figure 31 shows surface F3. Surface F3 has a height H3 relative to surface TS. Height H3 is higher than the height of surface TS and higher than heights H1 and H2, respectively. Height H3 is higher than the height of the bottom surface BS relative to surface TS.

[0068] Figure 32 is a schematic cross-sectional view in the Z-axis direction of a portion of the mesa MS in the first modification. Figure 32 shows plane F4. Plane F4 has a height H4 relative to plane TS. Height H4 is higher than the height of plane TS and higher than heights H1 and H2, respectively. Height H4 is higher than the height of the bottom plane BS relative to plane TS. Height H4 is, for example, the same height as height H3.

[0069] Figure 33 is a schematic cross-sectional view in the Z-axis direction of a portion of the mesa MS in the first modification. Figure 33 shows plane F5. Plane F5 has a height H5 relative to plane TS. Height H5 is higher than the height of plane TS and higher than heights H3 and H4, respectively. Height H5 is higher than the height of the bottom plane BS relative to plane TS.

[0070] Surfaces F1, F2, F3, F4, and F5 can have their heights adjusted, for example, by dry etching the substrate 1 in the thickness direction using an etching mask. Furthermore, by setting heights H1 and H2 to the same height as the bottom surface BS, the increase in the number of etching masks required for etching can be reduced.

[0071] In the first modified version of the above imprint method, imprinting is performed in the same order as in the above imprint method, with shot area 110a, shot area 110b, shot area 110c, and shot area 110d as shown in Figure 12.

[0072] First, as shown in Figure 13, an imprint is performed on the shot region 110a. Figures 34, 35, and 36 are schematic diagrams illustrating an example of imprinting on the shot region 110a in the first modified example. Figure 34 schematically shows the XZ cross section of the intersection 110x at line segment A1-A2 in Figure 13. Figure 35 schematically shows the YZ cross section of the intersection 110x at line segment B1-B2 in Figure 13. Figure 36 schematically shows an example of the three-dimensional shape of a part of the hardened imprint material layer 102a.

[0073] In the example of imprinting on a shot region 110a, a template TP is pressed against the imprint material layer 102a formed in the shot region 110a such that surfaces F1 and F2 overlap with space S in the Z-axis direction, the pattern surface PT is brought into contact with the imprint material layer 102a to form the imprint material layer 102a, and after the imprint material layer 102a is cured, the template TP is removed.

[0074] In Figure 34, the imprint material layer 102a is in contact with surface F1 and molded according to its height H1. In Figure 35, the imprint material layer 102a is in contact with surface F2 and molded according to its height H2. At this time, the thickness of a portion of the imprint material layer 102a in space S is greater than the thickness of a portion of the imprint material layer 102a in space S shown in Figure 15. This makes it possible to form a hardened layer of the imprint material layer 102a having, for example, the shape shown in Figure 36.

[0075] Next, as shown in Figure 17, an imprint is performed on the shot region 110b. Figures 37, 38, and 39 are schematic diagrams illustrating an example of imprinting on the shot region 110b in the first modified example. Figure 37 schematically shows the XZ cross section of the intersection 110x at line segment A1-A2 in Figure 17. Figure 38 schematically shows the YZ cross section of the intersection 110x at line segment B1-B2 in Figure 17. Figure 39 schematically shows an example of the three-dimensional shape of a part of the hardened imprinted material layer 102b.

[0076] In the example of imprinting on the shot region 110b, the template TP is pressed against the imprint material layer 102b formed in the shot region 110b so that surfaces F1 and F3 overlap with space S in the Z-axis direction, the pattern surface PT is brought into contact with the imprint material layer 102b to form the imprint material layer 102b, and after the imprint material layer 102b is cured, the template TP is removed.

[0077] In Figure 37, the imprint material layer 102b contacts surface F1 and is molded according to its height H1. However, since a portion of the hardened imprint material layer 102a also contacts surface F1, the portion of the imprint material layer 102b that has the same height as the imprint material layer 102a is not laminated onto a portion of the imprint material layer 102a. In Figure 38, a portion of the imprint material layer 102b contacts surface F1 and is molded according to its height H1, so the portion of the imprint material layer 102b that has the same height as the imprint material layer 102a is not laminated onto a portion of the imprint material layer 102a. In addition, another portion of the imprint material layer 102b contacts surface F3 and is molded according to its height H3. Therefore, in space S, a portion of the imprint material layer 102b is laminated onto a portion of the imprint material layer 102a. In this case, the thickness of the layered structure between a portion of the imprint material layer 102a and a portion of the imprint material layer 102b in space S is greater than the thickness of the layered structure between a portion of the imprint material layer 102a and a portion of the imprint material layer 102b in space S shown in Figure 19. This makes it possible to form a hardened layer of the imprint material layer 102b having, for example, the shape shown in Figure 39.

[0078] Furthermore, if the imprint material is fluid, as shown in Figure 39, the portion formed by surface F3 of the imprint material layer 102b may be shifted in the X-axis direction relative to space S when viewed from the Z-axis direction and overlap with the imprint material layer 102a.

[0079] Next, as shown in Figure 21, an imprint is performed on the shot region 110c. Figures 40, 41, and 42 are schematic diagrams illustrating an example of imprinting on the shot region 110c in the first modified example. Figure 40 schematically shows the XZ cross section of the intersection 110x at line segment A1-A2 in Figure 21. Figure 41 schematically shows the YZ cross section of the intersection 110x at line segment B1-B2 in Figure 21. Figure 42 schematically shows an example of the three-dimensional shape of a part of the hardened imprinted material layer 102c.

[0080] In the example of imprinting on the shot area 110c, the template TP is pressed against the imprint material layer 102c formed in the shot area 110c so that surfaces F2 and F4 overlap with space S in the Z-axis direction, the pattern surface PT is brought into contact with the imprint material layer 102c to form the imprint material layer 102c, and after the imprint material layer 102c is cured, the template TP is removed.

[0081] In Figure 40, the imprint material layer 102c is in contact with surface F4 and molded according to its height H4. In Figure 41, the imprint material layer 102c is in contact with surface F2 and molded according to its height H2, and also in contact with surface F4 and molded according to its height H4. As a result, in space S, a portion of the imprint material layer 102c is laminated to the same height as a portion of the imprint material layer 102b adjacent to a portion of the imprint material layer 102a. At this time, the thickness of the laminate between a portion of the imprint material layer 102a and a portion of the imprint material layer 102c in space S is greater than the thickness of the laminate between a portion of the imprint material layer 102a and a portion of the imprint material layer 102c in space S shown in Figure 23. This makes it possible to form a hardened layer of the imprint material layer 102c having, for example, the shape shown in Figure 42.

[0082] Furthermore, if the imprint material is fluid, as shown in Figure 42, the portion formed by the surface F4 of the imprint material layer 102c may be shifted in the Y-axis direction relative to the space S when viewed from the Z-axis direction and overlap with the imprint material layer 102a.

[0083] Next, as shown in Figure 25, an imprint is performed on the shot region 110d. Figures 43, 44, and 45 are schematic diagrams illustrating an example of imprinting on the shot region 110d in the first modified example. Figure 43 schematically shows the XZ cross section of the intersection 110x at line segment A1-A2 in Figure 25. Figure 44 schematically shows the YZ cross section of the intersection 110x at line segment B1-B2 in Figure 25. Figure 45 schematically shows an example of the three-dimensional shape of a part of the cured imprint material layer 102d.

[0084] In the example of imprinting on a shot region 110d, a template TP is pressed against the imprint material layer 102d formed in the shot region 110d such that the surface F5 overlaps with the space S in the Z-axis direction, the pattern surface PT is brought into contact with the imprint material layer 102d to form the imprint material layer 102d, and after the imprint material layer 102d is cured, the template TP is removed.

[0085] In Figure 43, the imprint material layer 102d is in contact with surface F5 and molded according to its height H5. In Figure 44, the imprint material layer 102d is in contact with surface F5 and molded according to its height H5. As a result, in space S, a portion of the imprint material layer 102d is laminated onto a portion of the imprint material layer 102a, a portion of the imprint material layer 102b, and a portion of the imprint material layer 102c, respectively. At this time, the thickness of the lamination of a portion of the imprint material layer 102a, a portion of the imprint material layer 102c, and a portion of the imprint material layer 102d in space S is greater than the thickness of the lamination of a portion of the imprint material layer 102a, a portion of the imprint material layer 102c, and a portion of the imprint material layer 102d in space S as shown in Figure 27. This makes it possible to form a hardened layer of the imprint material layer 102d having, for example, the shape shown in Figure 45.

[0086] Furthermore, if the imprint material is fluid, as shown in Figure 45, the portion formed by the surface F5 of the imprint material layer 102d may be shifted in the X-axis or Y-axis direction relative to space S when viewed from the Z-axis direction, and may overlap with the imprint material layers 102a, 102b, and 102c.

[0087] As described above, the first modification of the imprint method uses a template TP that has surfaces F1 and F2 having a height higher than the top surface of the pattern surface PT, surfaces F3 and F4 having a height higher than surfaces F1 and F2, and a surface F5 at corner C1 having an even higher height than surfaces F3 and F4. Imprinting is performed in the order of shot area 110a, shot area 110b, shot area 110c, and shot area 110d. When forming shot area 110b and shot area 110c, the template TP is brought into contact so that surface F3 or F4 overlaps with space S in the Z-axis direction, and when forming the imprint material layer 102d, the template TP is brought into contact so that surface F5 overlaps with space S in the Z-axis direction. As a result, the imprint material layers 102a, imprint material layer 102b, imprint material layer 102c, and imprint material layer 102d can be partially laminated without the template TP tilting. Therefore, the occurrence of gaps between the imprint material layers 102a, 102b, 102c, and 102d at the intersection 110x can be suppressed. As a result, for example, a separate process to fill the gaps afterward is unnecessary, which can reduce the manufacturing cost of semiconductor devices.

[0088] (A second variation of the imprint method) Next, a second modification of the imprinting method will be described. In this second modification, the position of surface F5 is different from that of the imprinting method described above. The differences from the imprinting method described above will be explained below, and for other parts, the explanation of the imprinting method described above can be used as appropriate.

[0089] Figure 46 is a schematic plan view illustrating an example of the surface structure of a mesa MS in a second modified example. Figure 46 shows the X-axis, Y-axis, and Z-axis directions of the mesa MS.

[0090] The surface of the mesa MS has a patterned surface PT, a surface F1, and a surface F2, similar to the surface of the mesa MS shown in Figure 5, while the positions of surfaces F3, F4, and F5 differ from those in Figure 5. The heights from each surface TS are the same as in Figure 5.

[0091] Surface F3 is provided on edge E3. Surface F3 extends along edge E3 from corner C1 to one end of surface F1 between corner C1 and corner C2.

[0092] Surface F4 is provided on edge E4. Surface F4 extends along edge E4 from corner C1 to one end of surface F2 between corner C1 and corner C4.

[0093] Surface F5 is located at corner C1. Surface F5 is located outside of surfaces F3 and F4, respectively. Surface F5 extends along edge E3 from corner C1 towards corner C2, and extends along edge E4 from corner C1 towards corner C4.

[0094] The surface structure of the mesa MS is not limited to the structure shown in Figure 46. Figure 47 is a schematic plan view illustrating another example of the surface structure of the mesa MS in the second modification. Figure 47 differs from Figure 46 in that it has a surface F6 near corner C2 and a surface F7 near corner C4. The differences from Figure 46 will be described below, and the explanation of other parts can be appropriately referred to in Figure 46.

[0095] Surface F1 extends along edge E1 from one end of surface F6 to corner C3, between corners C2 and C3.

[0096] Face F2 extends along edge E2 from corner C3 to one end of face F7, between corners C3 and C4.

[0097] Face F3 extends along edge E3 from corner C1 to the other end of face F6, between corners C1 and C2.

[0098] Face F4 extends along edge E4 from corner C1 to the other end of face F7, between corner C1 and corner C4.

[0099] Surface F6 is provided at corner C2. Surface F6 extends along edge E1 from corner C2 to one end of surface F1, and extends along edge E3 from each C2 to the other end of surface F3. Further explanation of surface F6 can be found in the explanation of surface F6 in Figure 6.

[0100] Surface F7 is provided at corner C4. Surface F7 extends along edge E2 from corner C4 to one end of surface F2, and extends along edge E4 from each C4 to the other end of surface F4. Further explanation of surface F7 can be found in the explanation of surface F7 in Figure 6.

[0101] In the second modified version of the above imprint method, imprinting is performed in the same order as in the above imprint method, in the order shown in Figure 12: shot area 110a, shot area 110b, shot area 110c, and shot area 110d. The imprinting of shot area 110a, shot area 110b, and shot area 110c is the same as in the above imprint method, so the explanation is omitted here.

[0102] Figures 48, 49, 50, and 51 are schematic diagrams illustrating examples of imprinting on the shot region 110d. Figure 48 schematically shows the upper surface of the intersection 110x. Figure 49 schematically shows the XZ cross section of the intersection 110x at line segment A1-A2 in Figure 48. Figure 50 schematically shows the YZ cross section of the intersection 110x at line segment B1-B2 in Figure 48. Figure 51 schematically shows an example of the three-dimensional shape of a portion of the hardened imprint material layer 102d.

[0103] In the example of imprinting on a shot region 110d, a template TP is pressed against the imprint material layer 102d formed in the shot region 110d such that the surface F5 overlaps with the space S in the Z-axis direction, the pattern surface PT is brought into contact with the imprint material layer 102d to form the imprint material layer 102d, and after the imprint material layer 102d is cured, the template TP is removed.

[0104] In Figure 49, the imprint material layer 102d contacts surface F4 and is formed according to its height H4, and contacts surface F5 and is formed according to its height H5. In Figure 50, the imprint material layer 102d contacts surface F3 and is formed according to its height H3, and contacts surface F5 and is formed according to its height H5. Therefore, in space S, a portion of the imprint material layer 102d is laminated onto a portion of the imprint material layer 102a, a portion of the imprint material layer 102b, and a portion of the imprint material layer 102c, respectively. Furthermore, a portion of the imprint material layer 102d is laminated onto a portion of the imprint material layer 102a, a portion of the imprint material layer 102b, and a portion of the imprint material layer 102c, respectively, so as to overlap with the shot regions 110a, 110b, and 110c in the Z-axis direction. This makes it possible to form hardened layers of imprint material layer 102a, imprint material layer 102b, imprint material layer 102c, and imprint material layer 102d. Furthermore, when using a template 1 having the surface shown in Figure 47, it is possible to form hardened layers of imprint material layer 102a, imprint material layer 102b, imprint material layer 102c, and imprint material layer 102d having, for example, the shape shown in Figure 51.

[0105] Furthermore, if the imprint material is fluid, as shown in Figure 51, the portion formed by the surface F5 of the imprint material layer 102d may be shifted in the X-axis or Y-axis direction relative to space S when viewed from the Z-axis direction, and may overlap with the imprint material layers 102a, 102b, and 102c.

[0106] As described above, the second modification of the imprint method uses a template TP that has surfaces F3 and F4 having a height higher than surfaces F1 and F2, and a surface F5 at corner C1 that has an even higher height than surfaces F3 and F4 and is located outside surface F4. Imprinting is performed in the order of shot area 110a, shot area 110b, shot area 110c, and shot area 110d. When forming shot area 110b and shot area 110c, the template TP is brought into contact so that surface F3 or surface F4 overlaps with space S in the Z-axis direction, and when forming the imprint material layer 102d, the template TP is brought into contact so that surface F5 overlaps with space S in the Z-axis direction. As a result, the imprint material layers 102a, imprint material layer 102b, imprint material layer 102c, and imprint material layer 102d can be partially laminated without the template TP tilting. Therefore, the occurrence of gaps between the imprint material layers 102a, 102b, 102c, and 102d at the intersection 110x can be suppressed. As a result, for example, a separate process to fill the gaps afterward is unnecessary, which can reduce the manufacturing cost of semiconductor devices.

[0107] (Third variation of the imprint method) Next, a third modification of the imprint method will be described. The third modification differs from the above example of the imprint method in that the periphery of the mesa MS has a jigsaw shape. A jigsaw shape is a shape in which each edge constituting the periphery of the mesa MS is bent, and when the surfaces of multiple mesa MS are arranged adjacent to each other, adjacent edges interlock. The differences from the above example of the imprint method will be described below, and for other parts, the explanation of the above example of the imprint method can be appropriately referred to.

[0108] Figure 52 is a schematic plan view illustrating an example of the surface structure of a mesa MS. Figure 52 shows the X-axis, Y-axis, and Z-axis directions of the mesa MS.

[0109] The surface of the mesa MS has a patterned surface PT and surfaces F1, F2, F3, F4, and F5. Surfaces F1, F2, F3, F4, and F5 are provided around the patterned surface PT. The patterned surface PT may be surrounded by surfaces F1, F2, F3, F4, and F5. The height from each surface TS is the same as in Figure 5.

[0110] Surface F1 is provided on edge E1. Edge E1 is bent in an uneven manner along the X-axis direction and has a recessed region D1 that is recessed on the inside of the surface of the mesa MS, for example. Surface F1 extends between angles C2 and C3, bending along edge E1 from angle C2 to angle C3, forming an uneven surface.

[0111] Surface F2 is provided on edge E2. Edge E2 is bent in an uneven manner along the Y-axis direction, and has a recessed region D2 that is recessed on the inside of the surface of the mesa MS, for example. Surface F2 extends between angles C3 and C4, bending along edge E2 from angle C3 to one end of surface F4, forming an uneven surface. Surface F2, together with surface F1, forms a single continuous surface.

[0112] Surface F3 is provided on edge E3. Edge E3 is bent in an uneven manner along the X-axis direction and has, for example, a convex region P1 that protrudes outward from the surface of the mesa MS. The convex region P1 is provided on the opposite side of the concave region D2 and can fit or interlock with the concave region D2 when positioned adjacent to it. Surface F3 extends along edge E3 from corner C1 to corner C4 between corners C1 and C2.

[0113] Surface F4 is provided on edge E4. Edge E4 is bent in an uneven manner along the X-axis direction and has convex regions P2 and P3 that project outward from the surface of the mesa MS, for example. Convex region P2 is provided on the opposite side of concave region D1 and can fit or interlock with concave region D1 when positioned adjacent to it. Convex region P3 is provided adjacent to corner C1. Surface F4 extends along edge E4 from corner C1 to corner C4 between corners C1 and C4.

[0114] Surface F5 is provided in the convex region P3. Surface F5 is provided, for example, on the outside of surface F4, but is not limited to this, and surface F5 may protrude from the periphery of the pattern surface PT without forming a region between surface F4 and surface F5. The planar shape of surface F5 is not particularly limited, but is for example rectangular. It extends along edge E3 from corner C1 to one end of surface F3, and extends along edge E4 from each C1 to one end of surface F4. Surface F5 has widths W3 and W4, respectively.

[0115] In the third modified version of the above imprint method, imprinting is performed in the same order as in the above imprint method, with shot area 110a, shot area 110b, shot area 110c, and shot area 110d.

[0116] First, an imprint is performed on the shot region 110a. Figures 53, 54, and 55 are schematic diagrams illustrating an example of imprinting on the shot region 110a in the third modified example. Figure 53 schematically shows the upper surface of the intersection 110x between shot regions 110a, 110b, 110c, and 110d. Figure 54 schematically shows the XZ cross section of the intersection 110x at line segment A1-A2 in Figure 53. Figure 55 schematically shows the YZ cross section of the intersection 110x at line segment B1-B2 in Figure 53.

[0117] In the example of imprinting on a shot region 110a, a template TP is pressed against the imprint material layer 102a formed in the shot region 110a such that surfaces F1 and F2 overlap with space S in the Z-axis direction, the pattern surface PT is brought into contact with the imprint material layer 102a to form the imprint material layer 102a, and after the imprint material layer 102a is cured, the template TP is removed.

[0118] In Figure 54, the surface 100a of the object 100 remains exposed because the imprint material layer 102 is not formed thereon. In Figure 55, the imprint material layer 102a contacts surface F1 and is formed according to its height H1.

[0119] Next, imprinting is performed on the shot region 110b. Figures 56, 57, and 58 are schematic diagrams illustrating an example of imprinting on the shot region 110b in the third modified example. Figure 56 schematically shows the upper surface of the intersection 110x. Figure 57 schematically shows the XZ cross section of the intersection 110x at line segment A1-A2 in Figure 56. Figure 58 schematically shows the YZ cross section of the intersection 110x at line segment B1-B2 in Figure 56.

[0120] In the example of imprinting on the shot region 110b, the template TP is pressed against the imprint material layer 102b formed in the shot region 110b so that surfaces F1 and F3 overlap with space S in the Z-axis direction, the pattern surface PT is brought into contact with the imprint material layer 102b to form the imprint material layer 102b, and after the imprint material layer 102b is cured, the template TP is removed.

[0121] In Figure 57, the imprint material layer 102b is formed in contact with the pattern surface PT according to the imprint pattern, in contact with surface F1 according to height H1, and in contact with surface F3 according to height H3. In Figure 58, the surface of the mesa MS remains exposed to the surface of the cured imprint material layer 102a without contact.

[0122] Next, imprinting is performed on the shot region 110c. Figures 59, 60, and 61 are schematic diagrams illustrating an example of imprinting on the shot region 110c in the third modified example. Figure 59 schematically shows the upper surface of the intersection 110x. Figure 60 schematically shows the XZ cross section of the intersection 110x at line segment A1-A2 in Figure 59. Figure 61 schematically shows the YZ cross section of the intersection 110x at line segment B1-B2 in Figure 59.

[0123] In the example of imprinting on the shot area 110c, the template TP is pressed against the imprint material layer 102c formed in the shot area 110c so that surfaces F2 and F4 overlap with space S in the Z-axis direction, the pattern surface PT is brought into contact with the imprint material layer 102c to form the imprint material layer 102c, and after the imprint material layer 102c is cured, the template TP is removed.

[0124] In Figure 60, the imprint material layer 102c is formed in contact with the pattern surface PT according to the imprint pattern, and is formed in contact with surface F2 according to the height H2. In Figure 61, the surface of the mesa MS remains exposed to the surface of the cured imprint material layer 102c without contact.

[0125] Next, an imprint is performed on the shot region 110d. Figures 62, 63, and 64 are schematic diagrams illustrating an example of imprinting on the shot region 110d in the third modified example. Figure 62 schematically shows the upper surface of the intersection 110x. Figure 63 schematically shows the XZ cross section of the intersection 110x at line segment A1-A2 in Figure 62. Figure 64 schematically shows the YZ cross section of the intersection 110x at line segment B1-B2 in Figure 62.

[0126] In the example of imprinting on a shot region 110d, a template TP is pressed against the imprint material layer 102d formed in the shot region 110d such that the surface F5 overlaps with the space S in the Z-axis direction, the pattern surface PT is brought into contact with the imprint material layer 102d to form the imprint material layer 102d, and after the imprint material layer 102d is cured, the template TP is removed.

[0127] In Figure 63, the imprint material layer 102d is molded in contact with surface F5 according to its height H5. In Figure 64, the imprint material layer 102d is molded in contact with surface F4 according to its height H4, and then molded in contact with surface F5 according to its height H5. As a result, a portion of the imprint material layer 102d extends into space S.

[0128] As described above, the third modification of the imprint method uses a template TP having a jigsaw structure, which includes surfaces F3 and F4 that are higher than surfaces F1 and F2, and a surface F5 that is even higher than surfaces F3 and F4 and is located outside surface F4, with the surface F5 at corner C1. Imprinting is performed in the order of shot area 110a, shot area 110b, shot area 110c, and shot area 110d. When forming shot area 110b and shot area 110c, the template TP is brought into contact so that surface F3 or F4 overlaps with space S in the Z-axis direction, and when forming the imprint material layer 102d, the template TP is brought into contact so that surface F5 overlaps with space S in the Z-axis direction. As a result, the imprint material layers 102a, 102b, 102c, and 102d can be partially laminated without the template TP tilting. Therefore, the occurrence of gaps between the imprint material layers 102a, 102b, 102c, and 102d at the intersection 110x can be suppressed. As a result, for example, a separate process to fill the gaps afterward is unnecessary, which can reduce the manufacturing cost of semiconductor devices.

[0129] The first, second, and third variations can be combined as appropriate.

[0130] (Method of manufacturing semiconductor devices) Figures 65 and 66 are schematic cross-sectional diagrams illustrating an example of a semiconductor device manufacturing method. By processing a portion of the object 100 using the hardened layer of the imprint material layer 102 formed using the above imprint method, a recess 100A is formed, for example, as shown in Figure 65. The object 100 is processed by partially removing the laminate constituting the object 100, for example, by dry etching. The shape of the object 100 after processing is determined according to the shape of the imprint pattern.

[0131] Next, a film is formed on the processed object 100, and as shown in Figure 66, a layer 151 is formed in the recess 100A by processing the film. The layer 151 is, for example, a conductive layer containing a metal material. The layer 151 has a function, for example, as embedded wiring.

[0132] As described above, in the example of the semiconductor device manufacturing method of this embodiment, a semiconductor device can be manufactured by processing the object 100 using the cured layer of the coating layer formed using the imprint method described above.

[0133] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0134] 1...Substrate, 1a...Surface, 1b...Surface, 100...Object, 100A...Recess, 100a...Surface, 102...Imprint material layer, 102a...Imprint material layer, 102b...Imprint material layer, 102c...Imprint material layer, 102d...Imprint material layer, 110...Shot area, 110a...Shot area, 110b...Shot area, 110c...Shot area, 110d...Shot area, 110x...Intersection, 151 ...layer, BS...face, C1...corner, C2...corner, C3...corner, C4...corner, CO...concave, D...concave, D1...concave area, D2...concave area, E1...edge, E2...edge, E3...edge, E4...edge, F1...plane, F2...plane, F3...plane, F4...plane, F5...plane, F6...plane, F7...plane, MS...mesa, P1...convex area, P2...convex area, P3...convex area, PT...pattern surface, S...space, TP...template, TS...plane, W1...width, W2...width, W3...width, W4...width.

Claims

1. Equipped with a mesa, The aforementioned mesa is, A patterned surface including an imprinted pattern, A first surface provided on the first edge of the mesa in the first direction, having a first height relative to the uppermost surface of the pattern surface, A second surface is provided on the second edge of the mesa in a second direction perpendicular to the first direction, and has a second height relative to the uppermost surface of the pattern surface, A third surface is provided on the third edge opposite to the second edge in the second direction of the mesa, and has a third height that is higher than the first height and the second height with respect to the uppermost surface, A fourth surface is provided on the fourth edge opposite the first edge in the first direction of the mesa, and the fourth height is higher than the first height and the second height, respectively, relative to the uppermost surface. A fifth surface is provided at the first corner adjacent to each of the third and fourth edges of the mesa, and having a fifth height that is higher than the third and fourth heights, respectively, relative to the uppermost surface. Having, Template.

2. The first height and the second height are each the same as the height of the top surface, The third height and the fourth height are each the same as the height of the bottom surface of the pattern surface relative to the top surface. The template according to claim 1.

3. Each of the first height and the second height is higher than the height of the top surface. Each of the third and fourth heights is higher than the height of the bottom surface of the pattern surface relative to the top surface. The template according to claim 1.

4. The fifth surface is provided on the outside of the fourth surface, The template according to claim 1.

5. The first edge has a first recessed region that is recessed toward the inside of the mesa along the second direction, The second edge has a second recessed region that is recessed toward the inside of the mesa along the first direction, The third edge is provided on the opposite side of the first concave region and has a first convex region that protrudes outward from the mesa along the second direction, The fourth edge has a second convex region provided on the opposite side of the second concave region and projecting outward from the mesa along the first direction, and a third convex region projecting outward from the mesa along the first direction, The fifth surface is provided in the third convex region, The template according to claim 4.

6. A method for imprinting an object onto its surface using a template, The aforementioned template comprises a mesa, The aforementioned mesa is, A patterned surface including an imprinted pattern, A first surface provided on the first edge of the mesa in the first direction, having a first height relative to the uppermost surface of the pattern surface, A second surface is provided on the second edge of the mesa in a second direction perpendicular to the first direction, and has a second height relative to the uppermost surface of the pattern surface, A third surface is provided on the third edge opposite to the second edge in the second direction of the mesa, and has a third height that is higher than the first height and the second height with respect to the uppermost surface, A fourth surface is provided on the fourth edge opposite the first edge in the first direction of the mesa, and the fourth height is higher than the first height and the second height, respectively, relative to the uppermost surface. A fifth surface is provided at the first corner adjacent to each of the third and fourth edges of the mesa, and having a fifth height that is higher than the third and fourth heights, respectively, relative to the uppermost surface. An imprinting method having the following characteristics.

7. The aforementioned surface is The first shot area and In the first direction of the surface, a second shot region adjacent to the first shot region, In a second direction perpendicular to the first direction of the surface, a third shot region adjacent to the first shot region, A fourth shot region adjacent to the second shot region in the first direction of the surface, and adjacent to the third shot region in the second direction of the surface, The space provided between the first to fourth shot areas, It has, The aforementioned method, The template is pressed against the first imprint material layer formed in the first shot region such that the first surface and the second surface overlap the first shot region, the pattern surface is brought into contact with the first imprint material layer, the first imprint material layer is cured, and then the template is removed. The template is pressed against the second imprint material layer formed in the second shot region such that the first and third surfaces overlap the space, the pattern surface is brought into contact with the second imprint material layer, the second imprint material layer is cured, and then the template is removed. The template is pressed against the third imprint material layer formed in the third shot region such that the second and fourth surfaces overlap the space, the pattern surface is brought into contact with the third imprint material layer, the third imprint material layer is cured, and then the template is removed. The template is pressed against the fourth imprint material layer formed in the fourth shot region such that the fifth surface overlaps with the space, the pattern surface is brought into contact with the fourth imprint material layer, and after the fourth imprint material layer is cured, the template is removed. The imprinting method according to claim 6.

8. The first height and the second height are each the same as the height of the top surface. The third height and the fourth height are each the same height as the lowest surface of the pattern surface relative to the uppermost surface. The imprinting method according to claim 6.

9. Each of the first height and the second height is higher than the height of the top surface. Each of the third and fourth heights is higher than the height of the bottom surface of the pattern surface relative to the top surface. The imprinting method according to claim 6.

10. The fifth surface is provided on the outside of the fourth surface, The imprinting method according to claim 6.

11. The first edge has a first recessed region that is recessed toward the inside of the mesa along the second direction, The second edge has a second recessed region that is recessed toward the inside of the mesa along the first direction, The third edge is provided on the opposite side of the first concave region and has a first convex region that protrudes outward from the mesa along the second direction, The fourth edge has a second convex region provided on the opposite side of the second concave region and projecting outward from the mesa along the first direction, and a third convex region projecting outward from the mesa along the first direction, The fifth surface is provided in the third convex region, The imprinting method according to claim 7.

12. An etching mask having a pattern is formed on the surface of an object including a semiconductor substrate. The object is etched using the etching mask. A method for manufacturing a semiconductor device, The etching mask is formed by an imprint method using a template. The aforementioned template comprises a mesa, The aforementioned mesa is, A patterned surface including an imprinted pattern, A first surface provided on the first edge of the mesa in the first direction, having a first height relative to the uppermost surface of the pattern surface, A second surface is provided on the second edge of the mesa in a second direction perpendicular to the first direction, and has a second height relative to the uppermost surface of the pattern surface, A third surface is provided on the third edge opposite to the second edge in the second direction of the mesa, and has a third height that is higher than the first height and the second height with respect to the uppermost surface, A fourth surface is provided on the fourth edge opposite the first edge in the first direction of the mesa, and the fourth height is higher than the first height and the second height, respectively, relative to the uppermost surface. A fifth surface is provided at the first corner adjacent to each of the third and fourth edges of the mesa, and having a fifth height that is higher than the third and fourth heights, respectively, relative to the uppermost surface. A method for manufacturing a semiconductor device having the following characteristics.

13. The aforementioned surface is The first shot area and In the first direction of the surface, a second shot region adjacent to the first shot region, In a second direction perpendicular to the first direction of the surface, a third shot region adjacent to the first shot region, A fourth shot region adjacent to the second shot region in the first direction of the surface, and adjacent to the third shot region in the second direction of the surface, The space provided between the first to fourth shot areas, It has, The aforementioned imprinting method is The template is pressed against the first imprint material layer formed in the first shot region such that the first surface and the second surface overlap the first shot region, the pattern surface is brought into contact with the first imprint material layer, the first imprint material layer is cured, and then the template is removed. The template is pressed against the second imprint material layer formed in the second shot region such that the first and third surfaces overlap the space, the pattern surface is brought into contact with the second imprint material layer, the second imprint material layer is cured, and then the template is removed. The template is pressed against the third imprint material layer formed in the third shot region such that the second and fourth surfaces overlap the space, the pattern surface is brought into contact with the third imprint material layer, the third imprint material layer is cured, and then the template is removed. The template is pressed against the fourth imprint material layer formed in the fourth shot region such that the fifth surface overlaps with the space, the pattern surface is brought into contact with the fourth imprint material layer, and after the fourth imprint material layer is cured, the template is removed. The method for manufacturing a semiconductor device according to claim 12.

14. The first height and the second height are each the same as the height of the top surface. The third height and the fourth height are each the same height as the lowest surface of the pattern surface relative to the uppermost surface. The method for manufacturing a semiconductor device according to claim 12.

15. Each of the first height and the second height is higher than the height of the top surface. Each of the third and fourth heights is higher than the height of the bottom surface of the pattern surface relative to the top surface. The method for manufacturing a semiconductor device according to claim 12.

16. The fifth surface is provided on the outside of the fourth surface, The method for manufacturing a semiconductor device according to claim 12.

17. The first edge has a first recessed region that is recessed toward the inside of the mesa along the second direction, The second edge has a second recessed region that is recessed toward the inside of the mesa along the first direction, The third edge is provided on the opposite side of the first concave region and has a first convex region that protrudes outward from the mesa along the second direction, The fourth edge has a second convex region provided on the opposite side of the second concave region and projecting outward from the mesa along the first direction, and a third convex region projecting outward from the mesa along the first direction, The fifth surface is provided in the third convex region, The method for manufacturing a semiconductor device according to claim 13.

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