Substrate processing method, substrate processing apparatus, and substrate processing program

Abstract

This disclosure describes a substrate processing method, a substrate processing apparatus, and a substrate processing program that can suppress static charge buildup on a substrate during substrate processing. [Solution] The substrate processing method includes a first step of holding the outer edge of the substrate with a holding part; a second step of supplying a chemical solution to the upper surface of the substrate after the first step; a third step of making the holding part electrically conductive at or before the time the chemical solution is supplied to the upper surface of the substrate in the second step; a fourth step of making the holding part non-conductive after the third step; a fifth step of stopping the supply of the chemical solution to the upper surface of the substrate and supplying a cleaning solution to the upper surface of the substrate after the fourth step; a sixth step of stopping the supply of the cleaning solution to the upper surface of the substrate and drying the substrate after the fifth step; and a seventh step of making the holding part electrically conductive after the sixth step.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method, a substrate processing apparatus, and a substrate processing program.

Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus that supplies a processing liquid to a rotating substrate to perform predetermined liquid processing (for example, removal processing of dirt and foreign substances, etching processing, cleaning processing, application processing of a resist liquid or a developer liquid, etc.) on the substrate W. During the liquid processing, the apparatus holds the outer peripheral edge of the substrate by a movable member.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure describes a substrate processing method, a substrate processing apparatus, and a substrate processing program capable of suppressing charging of a substrate during substrate processing.

Means for Solving the Problems

[0005] An example of the substrate processing method includes a first step of holding the outer peripheral edge of the substrate by a holding unit, a second step of supplying a chemical solution to the upper surface of the substrate after the first step, a third step of making the holding unit conductive at a time during or before the supply of the chemical solution to the upper surface of the substrate in the second step, a fourth step of making the holding unit non-conductive after the third step, a fifth step of stopping the supply of the chemical solution to the upper surface of the substrate and supplying a cleaning solution to the upper surface of the substrate after the fourth step, a sixth step of stopping the supply of the cleaning solution to the upper surface of the substrate and drying the substrate after the fifth step, and a seventh step of making the holding unit conductive after the sixth step.

Effects of the Invention

[0006] According to the substrate processing method, substrate processing apparatus, and substrate processing program described herein, it is possible to suppress the charging of a substrate during substrate processing. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic plan view showing an example of a substrate processing system. [Figure 2] Figure 2 is a schematic diagram showing an example of a liquid processing unit, and is a cross-sectional view showing the state when the substrate is in the lowered position. [Figure 3] Figure 3 is a perspective view showing the vicinity of the rotating plate and support plate in the liquid processing unit shown in Figure 2. [Figure 4] Figure 4 is a schematic diagram of an example of a liquid processing unit, showing a cross-sectional view of the unit when the substrate is in the raised position. [Figure 5] Figure 5 is a block diagram showing an example of the main components of a substrate processing system. [Figure 6] Figure 6 is a schematic diagram showing an example of the controller's hardware configuration. [Figure 7] Figure 7 is a flowchart illustrating an example of substrate processing. [Figure 8] Figure 8 is a diagram illustrating an example of substrate processing. [Figure 9] Figure 9 is a diagram illustrating the subsequent process shown in Figure 8. [Figure 10] Figure 10 is a diagram illustrating the subsequent process shown in Figure 9. [Figure 11] Figure 11 is a diagram illustrating the subsequent process shown in Figure 10. [Figure 12] Figure 12 shows an example of the charging behavior of a substrate. [Figure 13] Figure 13 is a schematic diagram illustrating another example of a liquid processing unit. [Figure 14] Figure 14 is a schematic diagram illustrating another example of a switching mechanism. [Figure 15]FIG. 15 is a diagram schematically showing another example of the liquid processing unit.

Embodiments for Carrying Out the Invention

[0008] In the following description, the same reference numerals are used for the same elements or elements having the same function, and redundant descriptions are omitted. In this specification, when referring to up, down, right, and left in the drawings, the directions of the reference numerals in the drawings are used as the reference.

[0009] [Substrate Processing System] First, referring to FIG. 1, a substrate processing system 1 (substrate processing apparatus) configured to process a substrate W will be described. The substrate processing system 1 includes a loading / unloading station 2, a processing station 3, and a controller Ctr (control unit). The loading / unloading station 2 and the processing station 3 may be arranged in a line in the horizontal direction, for example.

[0010] The substrate W may have a disk shape, or may have a plate shape other than circular such as a polygon. The substrate W may have a notch portion where a part is cut out. The notch portion may be, for example, a notch (groove such as U-shaped or V-shaped), or a linear portion (so-called orientation flat) extending linearly. The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or other various substrates. The diameter of the substrate W may be, for example, about 200 mm to 450 mm.

[0011] The loading / unloading station 2 includes a placement unit 4, a loading / unloading unit 5, and a shelf unit 6. The placement unit 4 includes a plurality of placement tables (not shown) arranged in the width direction (the vertical direction in FIG. 1). Each placement table is configured to be able to place a carrier 7. The carrier 7 is configured to accommodate at least one substrate W in a sealed state. The carrier 7 includes an opening / closing door (not shown) for taking in and out the substrate W.

[0012] The loading / unloading unit 5 is arranged adjacent to the placement unit 4 in the direction in which the loading / unloading station 2 and the processing station 3 are aligned (the left - right direction in FIG. 1). The loading / unloading unit 5 includes an opening / closing door (not shown) provided for the placement unit 4. When the opening / closing door of the carrier 7 and the opening / closing door of the loading / unloading unit 5 are both opened with the carrier 7 placed on the placement unit 4, the inside of the loading / unloading unit 5 and the inside of the carrier 7 communicate with each other.

[0013] The loading / unloading unit 5 incorporates a transfer arm A1 and a shelf unit 6. The transfer arm A1 is configured to be capable of horizontal movement in the width direction of the loading / unloading unit 5, vertical movement in the vertical direction, and rotational movement around the vertical axis. The transfer arm A1 is configured to take out the substrate W from the carrier 7 and deliver it to the shelf unit 6, and also to receive the substrate W from the shelf unit 6 and return it into the carrier 7. The shelf unit 6 is located near the processing station 3 and is configured to accommodate the substrate W.

[0014] The processing station 3 includes a transfer unit 8 and a plurality of liquid - processing units U. The transfer unit 8 extends horizontally, for example, in the direction in which the loading / unloading station 2 and the processing station 3 are aligned (the left - right direction in FIG. 1). The transfer unit 8 incorporates a transfer arm A2. The transfer arm A2 is configured to be capable of horizontal movement in the longitudinal direction of the transfer unit 8, vertical movement in the vertical direction, and rotational movement around the vertical axis. The transfer arm A2 is configured to take out the substrate W from the shelf unit 6 and deliver it to the liquid - processing unit U, and also to receive the substrate W from the liquid - processing unit U and return it into the shelf unit 6.

[0015] The plurality of liquid - processing units U are arranged in a row along the longitudinal direction of the transfer unit 8 (the left - right direction in FIG. 1) on each of both sides of the transfer unit 8. The configuration of the liquid - processing unit U will be described later.

[0016] The controller Ctr, which will be described in detail later, is configured to control the substrate - processing system 1 partially or entirely.

[0017] [Liquid Processing Unit] The configuration of the liquid processing unit U will be explained with reference to Figures 2 to 4. As illustrated in Figure 2, the liquid processing unit U includes a housing CB, a rotating holding unit 10, a lifting unit 20, a cup unit 30, a chemical supply unit 40, a cleaning liquid supply unit 50, and an imaging unit 60.

[0018] The housing CB contains at least a rotating holding section 10, a lifting section 20, and a cup section 30 inside. The housing CB is configured to allow the substrate W to be loaded into and out of its interior. An loading / unloading port (not shown) is formed in the side wall of the housing CB. The substrate W is transported into the housing CB and out of the housing CB by the transport arm A2 through this loading / unloading port.

[0019] The rotating and holding unit 10 includes a rotating plate 11, a support plate 12, a holding unit 13, and a regulating unit 14.

[0020] The rotating plate 11 is, for example, a disc with a larger diameter than the substrate W. The rotating plate 11 includes a collection groove 11a provided on the upper surface of the rotating plate 11 so as to extend in the circumferential direction of the rotating plate 11, a discharge hole 11b extending in the radial direction of the rotating plate 11 from the bottom surface of the collection groove 11a toward the outer circumferential surface of the rotating plate 11, and a plurality of through holes 11c.

[0021] The collection groove 11a is configured to collect the processing liquid (chemical solution L1 and cleaning solution L2, described later) that has entered between the rotating plate 11 and the support plate 12. The discharge hole 11b is inclined downward as it extends radially outward, and is configured to discharge the processing liquid collected in the collection groove 11a to the outside using the centrifugal force of the rotating plate 11. The multiple through holes 11c penetrate the rotating plate 11 along the vertical direction. The multiple through holes 11c may be arranged at approximately equal intervals so that they form a circular shape when viewed from above. As illustrated in Figure 3, if there are three multiple through holes 11c, they may be arranged at approximately 120° intervals.

[0022] The rotating plate 11 is connected at its lower central portion to the upper end of a rotating shaft 15 that extends vertically. The rotating shaft 15 is connected to a drive unit 16. The drive unit 16 operates based on an operation signal from the controller Ctr and is configured to rotate the rotating shaft 15. As the drive unit 16 rotates the rotating shaft 15, the rotating plate 11 rotates together with the rotating shaft 15 in a substantially horizontal position around the rotating shaft 15. The drive unit 16 may be, for example, a rotary motor.

[0023] A conductive part 11d made of a conductive material is provided on a portion of the upper surface of the rotating plate 11. The conductive part 11d is connected to earth (ground potential) via a conductor and a switching part 100.

[0024] The switching unit 100 is configured to switch between a conductive state and a non-conductive state between the conductive part 11d and the ground. In the example in Figure 2, the switching unit 100 may be a variable resistor. In this case, the switching unit 100 may be configured to change the resistance value continuously or discontinuously between a relatively high resistance value R1 (first resistance value) and a relatively low resistance value R2 (second resistance value).

[0025] The first resistance value may be, for example, a value such that insulation is provided between the conductive part 11d and the ground. The first resistance value may be, for example, 10 9 The second resistance value may be greater than or equal to Ω. The second resistance value may be, for example, a value such that conduction occurs between the conductive part 11d and ground. The second resistance value may be, for example, 10 4 It may be less than Ω.

[0026] The support plate 12 is, for example, a disc approximately the same size as the substrate W. The support plate 12 includes a protrusion 12a that projects downward. The protrusion 12a is configured to fit into a recess 11e provided on the upper surface of the rotating plate 11. When the support plate 12 is placed on the rotating plate 11, the protrusion 12a of the support plate 12 and the recess 11e of the rotating plate 11 fit together, and the lower surface of the support plate 12 comes into contact with the upper surface of the rotating plate 11. In this state, the support plate 12 rotates together with the rotating plate 11.

[0027] As illustrated in Figures 2 and 3, the support plate 12 includes a plurality of projections 12b that protrude upward from the upper surface of the support plate 12. The plurality of projections 12b are configured to support the substrate W in a substantially horizontal position at a height above the upper surface of the support plate 12 by contacting the lower surface Wb of the substrate W with their tips. The plurality of projections 12b may be arranged at substantially equal intervals near the outer circumference of the support plate 12 so as to form a circular shape when viewed from above.

[0028] A conductive portion 12c made of a conductive material is provided on a part of the lower surface of the support plate 12. The conductive portion 12c is positioned so as to overlap with the conductive portion 11d of the rotating plate 11 and the pressed portion 18a (described later) of the movable member 18 when viewed from above or below.

[0029] Multiple push-up sections 17 are provided on the lower surfaces of the rotating plate 11 and the support plate 12. Each push-up section 17 includes a cylindrical member 17a, a push-up pin 17b, and a spring member 17c.

[0030] The cylindrical member 17a is attached to the lower surface of the rotating plate 11. The cylindrical member 17a communicates with the through hole 11c of the rotating plate 11 and extends along the vertical direction. The push-up pin 17b is inserted inside the cylindrical member 17a and is movable up and down inside the cylindrical member 17a. The upper end of the push-up pin 17b is connected to the protrusion 12a of the support plate 12. The lower end of the push-up pin 17b is provided with a flange member 17d which is approximately the same size as the inner diameter of the cylindrical member 17a. The spring member 17c is, for example, a compression coil spring. The spring member 17c is positioned between the lower surface of the rotating plate 11 and the flange member 17d of the push-up pin 17b so as to surround the push-up pin 17b.

[0031] The holding portion 13 is configured to hold the substrate W together with the restricting portion 14 by pressing the outer peripheral edge Wc of the substrate W against the restricting portion 14. The holding portion 13 includes a movable member 18 (holding portion) and a spring member 19.

[0032] The movable member 18 is conductive. The movable member 18 may be formed of a conductive resin in which conductive particles such as carbon filler or carbon black are dispersed. The resin may be, for example, perfluoroalkoxy alkane (PFA) or polyether ether ketone (PEEK).

[0033] The movable member 18 is substantially L-shaped and includes a pressed portion 18a and an upright portion 18b. The pressed portion 18a extends horizontally from the outer edge of the support plate 12 toward the center, so as to be located within the groove 11f formed in the rotating plate 11.

[0034] The upright portion 18b extends upward continuously from the outer end of the pressed portion 18a, outside the outer peripheral edge of the support plate 12. The tip portion 18c of the upright portion 18b extends radially inward of the rotating plate 11. A groove (not shown) may be formed on the inner circumferential surface of the tip portion 18c at a position facing the outer peripheral edge Wc of the substrate W. The outer peripheral edge Wc of the substrate W fits into this groove, allowing the outer peripheral edge Wc of the substrate W to be held while being pressed towards the regulating portion 14.

[0035] The movable member 18 is supported so as to be rotatable around the rotation axis 18d near the lower end of the upright portion 18b. When viewed from above, the rotation axis 18d extends along the tangential direction of the outer edge of the support plate 12.

[0036] The spring member 19 is, for example, a torsion spring wound around the rotating shaft 18d. One end of the spring member 19 is connected to the side surface of the movable member 18. The spring member 19 biases the upright portion 18b in a direction that causes it to tilt radially outward from the rotating plate 11. Therefore, when the support plate 12 moves to the raised position (details will be described later), as illustrated in Figure 4, the inner end of the pressed portion 18a springs up and pops out of the groove 11f, and the upper end of the upright portion 18b moves radially outward from the rotating plate 11.

[0037] The restricting portion 14 is fixed to the rotating plate 11 so as to be positioned in a predetermined location (for example, a position facing the movable member 18 with the substrate W in between). The restricting portion 14 is configured to restrict the outer edge Wc of the substrate W when the support plate 12 is placed on the rotating plate 11, that is, when the support plate 12 moves to the lowered position (details will be described later), and to hold the substrate W in cooperation with the movable member 18.

[0038] Multiple restricting sections 14 may be provided along the circumferential direction of the support plate 12, as illustrated in Figure 3. One or more restricting sections 14 may be provided at positions facing the movable member 18.

[0039] The lifting unit 20 includes a supply pipe 21, a plurality of shafts 22, and a drive unit 23, as illustrated in Figure 2.

[0040] The supply pipe 21 is a hollow tubular member extending vertically. The supply pipe 21 is inserted inside the rotating shaft 15. The tip of the supply pipe 21 penetrates the rotating plate 11 and the support plate 12 and is located above the upper surface of the support plate 12. A nozzle 21a is provided at the tip of the supply pipe 21.

[0041] Inside the supply pipe 21, at least one flow path is formed, extending along the direction of extension of the supply pipe 21. This at least one flow path is connected to a liquid source and / or a gas source (not shown). The processing liquid (e.g., chemical solution, cleaning solution, etc.) stored in the liquid source is supplied through this at least one flow path from the nozzle 21a toward the lower surface Wb of the substrate W. The inert gas (e.g., nitrogen, etc.) stored in the gas source is supplied through this at least one flow path from the nozzle 21a toward the lower surface Wb of the substrate W.

[0042] Each of the multiple shafts 22 is connected to the supply pipe 21 via a connecting member 22a. The multiple shafts 22 extend vertically toward the support plate 12. The multiple shafts 22 may be arranged at approximately equal intervals so that they form a circular shape when viewed from above. For example, if there are three multiple shafts 22, they may be arranged at approximately 120° intervals.

[0043] The drive unit 23 is connected to the supply pipe 21. The drive unit 23 operates based on an operation signal from the controller Ctr and is configured to raise and lower the supply pipe 21. The drive unit 23 may be a power source such as a linear actuator. As the drive unit 23 raises and lowers the supply pipe 21, the supply pipe 21 and the multiple shafts 22 connected to the supply pipe 21 move up and down between a lowered position (see Figure 2) and an raised position (see Figure 4).

[0044] As illustrated in Figure 2, in the lowered position, the tip of the supply pipe 21 (nozzle 21a) is located below the tips of the multiple protrusions 12b. In the lowered position, the tips of the multiple shafts 22 are located below the push-up portion 17. In the lowered position, the restoring force of the spring acts in the direction that extends the spring member 17c, so that the support plate 12 is pulled downward via the push-up pin 17b. As a result, the convex portion 12a of the support plate 12 and the concave portion 11e of the rotating plate 11 fit together, and the lower surface of the support plate 12 comes into contact with the upper surface of the rotating plate 11. Therefore, the pressed portion 18a of the movable member 18 is pushed downward by the lower surface (conductive portion 12c) of the support plate 12 and pushed into the groove 11f formed in the rotating plate 11. Then, the upright portion 18b becomes upright, extending vertically, and the tip portion 18c of the upright portion 18b comes into contact with the outer edge Wc of the substrate W, which is supported on the multiple protrusions 12b. As a result, the movable member 18 presses the outer edge Wc of the substrate W against the restricting portion 14, and holds the substrate W together with the restricting portion 14.

[0045] In the lowered position, the conductive part 11d and the conductive part 12c come into contact, and the conductive part 12c comes into contact with the pressed part 18a. As a result, the conductive parts 11d, 12c and the movable member 18 are electrically connected. In this state, the switching unit 100 can switch between a conductive state and a non-conductive state between the movable member 18 and the ground.

[0046] On the other hand, as illustrated in Figure 4, as the supply pipe 21 rises from the lowered position to the raised position, the multiple shafts 22 rise together with the supply pipe 21 via the connecting member 22a. When the multiple shafts 22 reach the push-up section 17, the push-up pins 17b located at positions corresponding to the multiple shafts 22 are pushed up by the shafts 22. As a result, the spring member 17c is compressed, the support plate 12 floats up relative to the rotating plate 11, and the multiple protrusions 12b come into contact with the lower surface Wb of the substrate W. At the same time, the biasing force of the spring member 19 causes the upright section 18b to tilt radially outward from the rotating plate 11. Therefore, the holding of the outer edge Wc of the substrate W by the regulating section 14 and the movable member 18 is released, and the substrate W is supported by the multiple protrusions 12b. As the supply pipe 21 rises further to the raised position, the substrate W floats up to a height above the cup section 30. In this case, it becomes possible to transfer the substrate W between the transport arm A2 and other equipment without interference.

[0047] In the raised position, the support plate 12 floats above the rotating plate 11, causing the conductive part 11d and the conductive part 12c to separate. As a result, the conductive part 12c and the movable member 18 are electrically disconnected from the ground.

[0048] The cup section 30 functions as a liquid collection container that receives the processing liquid supplied to the upper surface Wa and lower surface Wb of the substrate W and shaken off from the substrate W. The cup section 30 includes an inner cup 31, an intermediate cup 32, and an outer cup 33.

[0049] The inner cup 31 has an annular shape overall and is provided to surround the substrate W from the outside while it is being held by the regulating portion 14 and the movable member 18. The inner cup 31 is connected to the rotating plate 11 by a connecting member (not shown) with its lower edge separated from the upper surface of the rotating plate 11. As a result, the inner cup 31 rotates in conjunction with the rotation of the rotating plate 11. As a result, the processing liquid supplied to the lower surface Wb of the substrate W and shaken off the substrate W is discharged into the outer cup 33 through the gap between the lower edge of the inner cup 31 and the rotating plate 11.

[0050] The middle cup 32 has an annular shape overall and is positioned to surround the inner cup 31 from the outside. The middle cup 32 is connected to the rotating plate 11 by a connecting member (not shown) such that its lower edge is separated from the upper surface of the rotating plate 11. As a result, the middle cup 32 rotates in conjunction with the rotation of the rotating plate 11. Consequently, the processing liquid supplied to the upper surface Wa of the substrate W and shaken off from the substrate W is collected in the space between the middle cup 32 and the inner cup 31, and discharged into the outer cup 33 through the gap between the lower edge of the middle cup 32 and the rotating plate 11.

[0051] The outer cup 33 has an annular shape overall and is positioned to surround the inner cup 32 from the outside, extending from the lower part of the rotating plate 11 to the side of the inner cup 32. A drain pipe 33a is provided in the bottom wall of the outer cup 33. The processed liquid discharged from the inner cup 31 and the inner cup 32 is received by the outer cup 33 and discharged to the outside of the liquid processing unit U through the drain pipe 33a.

[0052] The chemical supply unit 40 includes a liquid source 41, a pump 42, a valve 43, piping 44, a drive unit 45, and a supply nozzle 46. The liquid source 41 is the source of the chemical solution L1.

[0053] The chemical solution L1 may include, for example, an alkaline or acidic chemical solution (etching solution) for removing unwanted films adhering to the upper surface Wa of the substrate W. The alkaline chemical solution may include, for example, SC-1 solution (a mixture of ammonia, hydrogen peroxide, and pure water). The acidic chemical solution may include, for example, SC-2 solution (a mixture of hydrochloric acid, hydrogen peroxide, and pure water), SPM (a mixture of sulfuric acid and hydrogen peroxide), HF / HNO3 solution (a mixture of hydrofluoric acid and nitric acid). The film on the upper surface Wa of the substrate W may be, for example, an insulating film such as silicon nitride, or a conductive film such as titanium nitride, tungsten, or cobalt.

[0054] Pump 42 operates based on an operating signal from controller Ctr and is configured to supply the chemical solution L1 drawn from liquid source 41 to supply nozzle 46 via piping 44 and valve 43. Valve 43 operates based on an operating signal from controller Ctr and is configured to transition between an open state that allows fluid flow in piping 44 and a closed state that prevents fluid flow in piping 44. Piping 44 connects, in order from upstream, the liquid source 41, pump 42, valve 43, and supply nozzle 46.

[0055] The drive unit 45 is connected to the supply nozzle 46 via an arm 47. The drive unit 45 is configured to operate based on an operation signal from the controller Ctr and to drive the arm 47. As a result, the supply nozzle 46 moves horizontally or vertically above the substrate W as the arm 47 moves. The supply nozzle 46 may, for example, pivot between a discharge position where the discharge port faces the center of the substrate W and a retracted position where the discharge port is retracted radially outward from the outer edge Wc of the substrate W.

[0056] The supply nozzle 46 has its discharge port facing downwards. The supply nozzle 46 is configured to discharge the chemical solution L1 sent from the pump 42 from its discharge port toward the upper surface Wa of the substrate W.

[0057] The cleaning fluid supply unit 50 includes a liquid source 51, a pump 52, a valve 53, piping 54, a drive unit 55, and a supply nozzle 56. The liquid source 51 is the source of the cleaning fluid L2.

[0058] The cleaning solution L2 is a liquid used to remove (wash away) foreign matter (e.g., particles, chemical residue, film dissolving components from the chemical solution L1) from the substrate W. The cleaning solution L2 may contain, for example, pure water (DIW), ozonated water, carbonated water (CO2 water), ammonia water, etc.

[0059] Pump 52 operates based on an operating signal from controller Ctr and is configured to send cleaning fluid L2 drawn from liquid source 51 to supply nozzle 56 via piping 54 and valve 53. Valve 53 operates based on an operating signal from controller Ctr and is configured to transition between an open state that allows fluid flow in piping 54 and a closed state that prevents fluid flow in piping 54. Piping 54 connects, in order from upstream, the liquid source 51, pump 52, valve 53, and supply nozzle 56.

[0060] The drive unit 55 is connected to the supply nozzle 56 via an arm 57. The drive unit 55 is configured to operate based on an operation signal from the controller Ctr and to drive the arm 57. As a result, the supply nozzle 56 moves horizontally or vertically above the substrate W as the arm 57 moves. The supply nozzle 56 may, for example, pivot between a discharge position where the discharge port faces the center of the substrate W and a retracted position where the discharge port is radially outward from the outer edge Wc of the substrate W.

[0061] The supply nozzle 56 has its discharge port facing downwards. The supply nozzle 56 is configured to discharge the cleaning liquid L2 sent from the pump 52 from its discharge port toward the upper surface Wa of the substrate W.

[0062] The supply nozzles 46 and 56 may be made of resin, for example. The supply nozzles 46 and 56 may be antistatic tubes that include, for example, a resin tube body and at least one conductive member extending along the longitudinal direction of the tube body, provided on the outer circumferential surface of the tube body.

[0063] The imaging unit 60 operates based on an operation signal from the controller Ctr and is configured to image the entire upper surface Wa of the substrate W held by the regulating unit 14 and the movable member 18. When viewed from above, the imaging unit 60 is positioned within the housing CB in a location that does not overlap with the substrate W held by the regulating unit 14 and the movable member 18. The imaging unit 60 may be directly attached to the wall surface of the housing CB, or it may be indirectly attached to the housing CB via a support member or the like.

[0064] [controller] As shown in Figure 5, the controller Ctr has a reading unit M1, a storage unit M2, a processing unit M3, and an instruction unit M4 as functional modules. These functional modules are merely a convenient division of the controller Ctr's functions into multiple modules, and do not necessarily mean that the hardware constituting the controller Ctr is divided into such modules. Each functional module is not limited to being implemented by program execution, but may also be implemented by a dedicated electrical circuit (e.g., a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates these.

[0065] The reading unit M1 is configured to read a program from a computer-readable recording medium RM (device). The recording medium RM stores programs (program products) for operating each part of the substrate processing system 1 (drive units 16, 23, 45, 55, switching unit 100, pumps 42, 52, valves 43, 53, etc.). The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk. The recording medium RM may be built into the substrate processing system 1 or may be a separate unit from the substrate processing system 1.

[0066] The storage unit M2 is configured to store various types of data. For example, the storage unit M2 may store programs read from the recording medium RM by the reading unit M1, setting data input from the operator via an external input device (not shown), etc. The storage unit M2 may also store data of captured images captured by the imaging unit 60, for example.

[0067] The processing unit M3 is configured to process various types of data. For example, the processing unit M3 may be configured to generate operation signals for operating each part of the substrate processing system 1 based on various types of data stored in the storage unit M2.

[0068] The instruction unit M4 is configured to transmit the operation signals generated in the processing unit M3 to each part of the substrate processing system 1.

[0069] The hardware of the controller Ctr may consist of, for example, one or more control computers. The controller Ctr may include, for example, the circuit C1 shown in Figure 6 as a hardware configuration. Circuit C1 may consist of electrical circuit elements. Circuit C1 may include, for example, a processor C2, a memory C3 (storage unit), a storage C4 (storage unit), a driver C5, and an input / output port C6. The processor C2 executes a program in cooperation with at least one of the memory C3 and storage C4, and performs signal input and output via the input / output port C6, thereby configuring each of the above-mentioned functional modules. The memory C3 and storage C4 function as storage unit M2. The driver C5 is a circuit that drives each part of the board processing system 1. The input / output port C6 performs signal input and output between the driver C5 and each part of the board processing system 1.

[0070] The substrate processing system 1 may have one controller Ctr, or it may have a controller group (control unit) composed of multiple controllers Ctr. In the latter case, each of the above functional modules may be implemented by one controller Ctr, or by a combination of two or more controllers Ctr. If the controller Ctr is composed of multiple computers (circuit C1), each of the above functional modules may be implemented by one computer (circuit C1), or by a combination of two or more computers (circuit C1). The controller Ctr may include multiple processors C2. In this case, each of the above functional modules may be implemented by one processor C2, or by a combination of two or more processors C2.

[0071] [Substrate Processing Method] Next, the processing of the substrate W will be explained with reference to Figures 7 to 11. The initial state will be described as the state in which the switching unit 100 is set to resistance value R1.

[0072] First, the controller Ctr instructs the transport arms A1 and A2 to take one substrate W from the carrier 7 and transport it toward the liquid treatment unit U. Next, in the liquid treatment unit U, the controller Ctr instructs the drive unit 23 to raise the supply pipe 21. As a result, the supply pipe 21 and the multiple shafts 22 connected to the supply pipe 21 rise to the raised position (see Figure 4). Next, the controller Ctr instructs the transport arm A2 to load the substrate W into the housing CB and place the substrate W on the multiple protrusions 12b (see step S1 in Figure 7).

[0073] Next, the controller Ctr instructs the drive unit 23 to lower the supply pipe 21. The supply pipe 21 and the multiple shafts 22 connected to the supply pipe 21 descend to the lowered position (see Figure 2). As the supply pipe 21 descends, the lower surface of the support plate 12 comes into contact with the upper surface of the rotating plate 11, and the pressed portion 18a of the movable member 18 is pushed downward by the lower surface (conductive portion 12c) of the support plate 12. As a result, the tip portion 18c of the upright portion 18b comes into contact with the outer edge Wc of the substrate W, which is supported on the multiple protrusions 12b. Consequently, the movable member 18 holds the substrate W together with the regulating portion 14 (see step S2 in Figure 7). Furthermore, when the supply pipe 21 is in the lowered position, the conductive portion 11d and the conductive portion 12c come into contact, and the conductive portion 12c comes into contact with the pressed portion 18a. Therefore, the conductive parts 11d, 12c and the movable member 18 are electrically connected to earth via the switching part 100.

[0074] At this time, the switching unit 100 is set to a resistance value R1, and there is no conductivity between the movable member 18 and the ground. Therefore, if the substrate W is charged, the charge from the substrate W does not flow to the ground through the movable member 18 (see Figure 8(a)). As a result, arcing and dielectric breakdown are suppressed.

[0075] Next, when the substrate W has descended to the lowered position, the imaging unit 60 starts imaging the substrate W (see step S4 in Figure 7). When the imaging unit 60 images the upper surface Wa of the substrate W, the data of the image captured by the imaging unit 60 is transmitted to the controller Ctr. The controller Ctr processes the image data and continues to determine whether or not the chemical solution L1 has come into contact with the movable member 18 until the chemical solution L1 comes into contact with the movable member 18. Note that the imaging unit 60 may start imaging the substrate W at any timing before the chemical solution L1 is discharged onto the substrate W.

[0076] Next, the controller Ctr instructs the switching unit 100 to gradually decrease the resistance value of the switching unit 100 from resistance value R1 to resistance value R2 (see step S3 in Figure 7). As a result, the movable member 18 and the ground become conductive at resistance value R2. Therefore, the charge on the substrate W can easily move to the ground through the movable member 18, and static electricity is discharged from the substrate W (see Figure 8(b)).

[0077] Next, the controller Ctr instructs the drive unit 16 to rotate the rotation shaft 15. As a result, the substrate W, which is held by the movable member 18 and the restricting unit 14, rotates together with the rotating plate 11, the support plate 12, and the rotation shaft 15 around the rotation shaft 15 in a substantially horizontal position.

[0078] Next, the controller Ctr instructs the drive unit 45 to move the supply nozzle 46 from the retracted position to the discharge position. Then, the controller Ctr instructs the pump 42 and valve 43 to supply the chemical solution L1 from the liquid source 41 to the upper surface Wa of the substrate W from the discharge port of the supply nozzle 46 (see step S5 in Figure 7). As a result, the chemical solution L1 spreads from the center of the substrate W towards the outer edge Wc (see Figure 9(a)).

[0079] Subsequently, the chemical solution L1 spreads further toward the outer edge Wc of the substrate W, and the chemical solution L1 comes into contact with the movable member 18 (see Figure 9(b)). As a result, the upper surface Wa of the substrate W is treated by the chemical solution L1.

[0080] When the controller Ctr determines that the chemical solution L1 has come into contact with the movable member 18, the controller Ctr instructs the switching unit 100 to switch the resistance value of the switching unit 100 from resistance value R2 to resistance value R1 (see step S6 in Figure 7). As a result, the connection between the movable member 18 and the ground becomes non-conductive at resistance value R1. Therefore, charge transfer between the substrate W and the ground through the movable member 18 is prevented, and when the chemical solution L1 comes into contact with the movable member 18, no electrical circuit is formed between the substrate W, the movable member 18, and the ground, thus suppressing the charging of the substrate W.

[0081] Next, the controller Ctr instructs the pump 42 and valve 43 to stop supplying the chemical solution L1 (see step S7 in Figure 7). The controller Ctr instructs the drive unit 45 to move the supply nozzle 46 from the discharge position to the retracted position.

[0082] Next, the controller Ctr instructs the drive unit 55 to move the supply nozzle 56 from the retracted position to the discharge position. Then, the controller Ctr instructs the pump 52 and valve 53 to supply the cleaning liquid L2 from the liquid source 51 to the upper surface Wa of the substrate W from the discharge port of the supply nozzle 56 (see step S8 in Figure 7). As a result, the cleaning liquid L2 spreads from the center of the substrate W toward the outer edge Wc, covering the entire upper surface Wa of the substrate W, and comes into contact with the movable member 18 (see Figure 10(a)). Therefore, the upper surface Wa of the substrate W is treated by the cleaning liquid L2. At this time, as the cleaning liquid L2 flows across the upper surface Wa of the substrate W, triboelectric charging occurs, and the substrate W may become charged.

[0083] Next, the controller Ctr instructs the pump 52 and valve 53 to stop supplying the cleaning fluid L2 (see step S9 in Figure 7). The controller Ctr instructs the drive unit 55 to move the supply nozzle 56 from the discharge position to the retracted position.

[0084] Next, the rotation of the substrate W is continued for a predetermined time. This causes the cleaning solution L2 adhering to the substrate W to be shaken off by the rotation of the substrate W, and the surface of the substrate W is dried (see step S10 in Figure 7 and Figure 10(b)).

[0085] Next, the controller Ctr instructs the switching unit 100 to switch the resistance value of the switching unit 100 from resistance value R1 to resistance value R2 (see step S11 in Figure 7). As a result, the movable member 18 and the ground become conductive at resistance value R2. Therefore, the charge on the substrate W can easily move to the ground through the movable member 18, so even if there was charge remaining on the substrate W during the processing in steps S6 to S10, the substrate W will be discharged again (see Figure 11(a)).

[0086] Next, the controller Ctr instructs the switching unit 100 to switch the resistance value of the switching unit 100 from resistance value R2 to resistance value R1 (see step S12 in Figure 7). As a result, the movable member 18 and the ground become non-conductive at resistance value R1 (see Figure 11(b)). Therefore, charge transfer between the substrate W and the ground through the movable member 18 is prevented, and when the chemical solution L1 comes into contact with the movable member 18, no electrical circuit is formed between the substrate W, the movable member 18, and the ground, thus suppressing the charging of the substrate W.

[0087] Next, the controller Ctr instructs the drive unit 23 to raise the supply pipe 21. As a result, the supply pipe 21 and the multiple shafts 22 connected to the supply pipe 21 rise to the raised position (see Figure 4). Next, the transport arm A2 removes the substrate W, which is supported by the multiple protrusions 12b, from the liquid processing unit U (see step S13 in Figure 7). With this, the processing of the substrate W is completed.

[0088] [Effect] Incidentally, during the pretreatment process of the substrate W (for example, etching), the substrate W may become charged. Therefore, it is conceivable to remove static charge from the substrate W by constructing a movable member 18 that holds the outer edge Wc of the substrate W from a conductive material and electrically connecting it to earth (ground potential). However, when the substrate W is treated with a chemical solution L1 or cleaning solution L2 while being held by such a movable member 18, it has been observed that the central part of the substrate W becomes negatively charged, while the region AR (see Figure 12) near the outer edge Wc that was held by the movable member 18 becomes positively charged. This is thought to be because when the chemical solution L1 or cleaning solution L2 comes into contact with the conductive movable member 18, an electrical circuit is formed between them and earth, and charge moves from earth to the substrate W via this electrical circuit and spreads to the region AR near the movable member 18 of the substrate W.

[0089] Thus, if the substrate W is charged, abnormalities in film deposition may occur on the substrate W. Furthermore, if chemical solution L1 is supplied to a charged substrate W, the chemical solution L1 acts as a conductor, causing current to flow on the substrate W, and a discharge from the substrate W called arcing (surface discharge) may occur. Consequently, devices (e.g., patterns) formed on the upper surface Wa of the substrate W may be damaged due to dielectric breakdown.

[0090] However, according to the above example, in step S3, before the chemical solution L1 is discharged onto the upper surface Wa of the substrate W, the movable member 18 is in a conductive state. At this time, if the substrate W is charged, the charge is transferred through the movable member 18, thereby removing the static charge from the substrate W. According to the above example, then in step S6, the movable member 18 is made non-conductive. At this time, the transfer of charge through the movable member 18 ceases, so when the chemical solution L1 or cleaning solution L2 comes into contact with the conductive movable member 18, an electrical circuit is not formed between them and the ground, and the charging of the substrate W is suppressed. According to the above example, further later, in step S11, the movable member 18 is made conductive. At this time, charge is transferred again through the movable member 18, so even if charge remains on the substrate W during the processing of the substrate W, the static charge is removed from the substrate W again. Thus, it is possible to suppress the charging of the substrate W during substrate processing. And by suppressing the charging of the substrate W, it is possible to suppress electrostatic discharge damage that occurs when the substrate W is subsequently unloaded.

[0091] In the above example, in step S12 following step S11, the movable member 18 is made non-conductive. Therefore, the transfer of charge through the movable member 18 is no longer performed, making it possible to suppress the charging of the substrate W.

[0092] In the above example, in step S6, when the chemical solution L1 is supplied to the upper surface Wa of the substrate W and comes into contact with the movable member 18, the movable member 18 is made non-conductive. Therefore, since the movable member 18 is conductive at the time the chemical solution L1 comes into contact with the movable member 18, it is possible to neutralize the charge contained in the chemical solution L1 when it is dispensed. Also, since the movable member 18 becomes non-conductive when the chemical solution L1 comes into contact with the movable member 18, the transfer of charge between the substrate W and the ground through the movable member 18 is prevented. Consequently, when the chemical solution L1 comes into contact with the movable member 18, no electrical circuit is formed via the movable member 18 and the chemical solution L1, making it possible to suppress the charging of the substrate and to suppress arcing and dielectric breakdown.

[0093] In the above example, the imaging unit 60 captures an image of the upper surface Wa of the substrate W, and the captured image is processed to determine the timing at which the chemical solution L1 comes into contact with the movable member 18. Therefore, it becomes possible to determine the timing at which the chemical solution L1 comes into contact with the movable member 18 with greater accuracy.

[0094] As shown in the above example, in step S6, the resistance value is gradually decreased from resistance value R1 to resistance value R2 in the switching unit 100 (variable resistor). Therefore, the change in resistance value from resistance value R1 to resistance value R2 can be achieved very easily using a variable resistor.

[0095] [Differentiation] The disclosures herein should be considered in all respects to be illustrative and not restrictive. Various omissions, substitutions, and modifications may be made to the above examples without departing from the claims and the gist thereof.

[0096] (1) The timing at which the switching unit 100 makes the movable member 18 electrically conductive may be during the supply of the chemical solution L1 to the upper surface Wa of the substrate W in step S5 or earlier. That is, the movable member 18 may be made electrically conductive before the chemical solution L1 comes into contact with the movable member 18.

[0097] (2) Step S12 in the above examples does not have to be performed. That is, the substrate W may be removed while the movable member 18 remains in a conductive state in step S11.

[0098] (3) As illustrated in Figure 13, the switching unit 100 may be a changeover switch that performs ON / OFF operation. In this case, the conductive state and non-conductive state of the movable member 18 can be achieved very easily by the changeover switch.

[0099] (4) As illustrated in Figure 14, the switching unit 100 may be a drive mechanism that operates a plurality of conductive movable members 18A (first holding members) and a plurality of insulating movable members 18B (second holding members). The switching unit 100 may drive the movable members 18A and 18B so that the plurality of movable members 18A hold the outer edge Wc of the substrate W and the plurality of movable members 18B move away from the substrate W, as illustrated in Figure 14(a). This switches the connection between the substrate W and the earth to a conductive state via the plurality of movable members 18A. The switching unit 100 may drive the movable members 18A and 18B so that the plurality of movable members 18B hold the outer edge Wc of the substrate W and the plurality of movable members 18A move away from the substrate W, as illustrated in Figure 14(b). This switches the connection between the substrate W and the earth to a non-conductive state. As shown in the example in Figure 14, it is possible to easily achieve a conductive state and a non-conductive state between the substrate W and the ground by switching the movable member 18A and the movable member 18B.

[0100] (5) As illustrated in Figure 15, the liquid processing unit U may include an ammeter 70 instead of the imaging unit 60. The ammeter 70 may be configured to measure the current flowing between the ground and the movable member 18. When the chemical solution L1 comes into contact with the movable member 18, the charge in the chemical solution L1 moves to the ground via the movable member 18, and a relatively large current flows between the ground and the movable member 18. Therefore, the controller Ctr may determine that the chemical solution L1 has come into contact with the movable member 18 when the ammeter 70 detects that a current of a predetermined value or more has flowed. In this case, it becomes possible to determine the timing of the chemical solution L1 coming into contact with the movable member 18 more accurately.

[0101] [Other examples] Example 1. An example of a substrate processing method includes a first step of holding the outer edge of the substrate with a holding part; a second step of supplying a chemical solution to the upper surface of the substrate after the first step; a third step of making the holding part electrically conductive at or before the time the chemical solution is being supplied to the upper surface of the substrate in the second step; a fourth step of making the holding part non-conductive after the third step; a fifth step of stopping the supply of the chemical solution to the upper surface of the substrate and supplying a cleaning solution to the upper surface of the substrate after the fourth step; a sixth step of stopping the supply of the cleaning solution to the upper surface of the substrate and drying the substrate after the fifth step; and a seventh step of making the holding part electrically conductive after the sixth step.

[0102] Incidentally, during the pretreatment process of a substrate (for example, etching), the substrate may become electrically charged. Therefore, it is conceivable to remove static electricity from the substrate by constructing a retaining part that holds the outer edge of the substrate from a conductive material and electrically connecting it to earth (ground potential). However, when the substrate is treated with chemicals or cleaning solutions while being held by such a retaining part, it has been observed that the central part of the substrate becomes negatively charged, while the area near the outer edge that was held by the retaining part becomes positively charged. This is thought to be because when the chemical or cleaning solution comes into contact with the conductive retaining part, an electrical circuit is formed between them and earth, and charge moves from earth to the substrate via this electrical circuit and spreads to the area of ​​the substrate near the retaining part.

[0103] Thus, if the substrate is charged, defects in the substrate film deposition may occur. Furthermore, if a chemical solution is supplied to a charged substrate, the solution can act as a conductor, causing an electric current to flow on the substrate and resulting in a discharge from the substrate called arcing (surface discharge). Consequently, devices (e.g., patterns) formed on the upper surface of the substrate may be damaged due to dielectric breakdown.

[0104] However, according to the method in Example 1, in the third step, the holding part is made conductive at or before the time when the chemical solution is being supplied to the upper surface of the substrate in the second step. At this time, if the substrate is charged, the charge moves through the holding part, thereby discharging the substrate. Then, after the third step, in the fourth step, the holding part is made non-conductive. At this time, the movement of charge through the holding part ceases, so when the chemical solution or cleaning solution comes into contact with the conductive holding part, an electrical circuit is not formed between them and the ground, and the charging of the substrate is suppressed. Furthermore, in the seventh step, the holding part is made conductive again. At this time, charge moves through the holding part again, so even if charge remains on the substrate from the fourth step to the seventh step, the substrate is discharged again. Thus, according to Example 1, it is possible to suppress the charging of the substrate during substrate processing. And by suppressing the charging of the substrate, it is possible to suppress electrostatic discharge damage that occurs during subsequent substrate removal.

[0105] Example 2. The method of Example 1 may further include an eighth step after the seventh step in which the holding part is made non-conductive. In this case, since the transfer of charge through the holding part no longer occurs, it is possible to suppress the charging of the substrate.

[0106] Example 3. In the method of Example 1 or Example 2, the fourth step may include making the holding part non-conductive after the third step and when the chemical solution comes into contact with the holding part due to the supply of the chemical solution to the upper surface of the substrate in the second step. In this case, since the holding part is conductive when the chemical solution comes into contact with the holding part, it is possible to neutralize the charge contained in the chemical solution when it is dispensed. Also, since the holding part becomes non-conductive when the chemical solution comes into contact with the holding part, the transfer of charge between the substrate and the ground through the holding part does not occur. Therefore, when the chemical solution comes into contact with the holding part, no electrical circuit is formed through the holding part and the chemical solution. Consequently, it is possible to suppress the charging of the substrate and to suppress arcing and dielectric breakdown.

[0107] Example 4. In the method of Example 3, the fourth step may include determining the timing when the chemical solution comes into contact with the holding part by imaging the upper surface of the substrate with the imaging unit and processing the captured image. In this case, it becomes possible to determine the timing when the chemical solution comes into contact with the holding part more accurately.

[0108] Example 5. In the method of Example 3, the fourth step may include determining that the chemical solution has come into contact with the holding part by detecting, using an ammeter, that a current exceeding a predetermined value has flowed through the holding part. In this case, it becomes possible to determine more accurately the timing of when the chemical solution comes into contact with the holding part.

[0109] Example 6. In any of the methods in Examples 1 to 5, the third step may include gradually lowering the resistance of the retaining part, which is in a non-conductive state at a first resistance value when the retaining part holds the outer edge of the substrate in the first step, until the time when the chemical solution is being supplied to the upper surface of the substrate in the second step, so that it becomes conductive at a second resistance value. In Example 6, when the retaining part holds the outer edge of the substrate in the first step, the retaining part is in a non-conductive state at a first resistance value, which is a relatively high resistance value. Therefore, if the substrate is charged, the charge from the substrate does not flow to the ground through the retaining part. As a result, the occurrence of arcing and dielectric breakdown is suppressed. Also, in Example 6, by gradually lowering the resistance value until the time when the chemical solution is being supplied to the upper surface of the substrate in the second step, the retaining part becomes conductive at a second resistance value, which is a relatively low resistance value. As a result, charge can move more easily through the retaining part, and static electricity is discharged from the substrate. Thus, according to Example 6, it is possible to suppress the charging of the substrate while suppressing the occurrence of arcing and dielectric breakdown.

[0110] Example 7. In the method of Example 6, the first resistance value is 10 9 The second resistance is greater than Ω and is 10 4 It is acceptable to have a value less than Ω.

[0111] Example 8. In the method of Example 6 or Example 7, the third step may include gradually decreasing the resistance value from a first resistance value to a second resistance value using a variable resistor. In this case, the change in resistance value from the first resistance value to the second resistance value can be achieved very easily using a variable resistor.

[0112] Example 9. In any of the methods in Examples 1 to 5, the conductive and non-conductive states of the holding part may be switched by a changeover switch that performs an ON / OFF operation. In this case, the conductive and non-conductive states of the holding part can be achieved very easily by the changeover switch.

[0113] Example 10. In any of the methods in Examples 1 to 5, the holding portion includes a first holding member that is conductive and a second holding member that is insulating, and the conductive state and non-conductive state of the holding portion may be switched by the substrate being held by the first holding member and the substrate being held by the second holding member. In this case, the conductive state and non-conductive state of the holding portion can be achieved very easily by switching the first holding member and the second holding member.

[0114] Example 11. An example of a substrate processing apparatus comprises a holding unit configured to hold the outer edge of a substrate, a chemical supply unit configured to supply a chemical solution to the upper surface of the substrate, a cleaning solution supply unit configured to supply a cleaning solution to the upper surface of the substrate, a switching unit configured to switch between a conductive state and a non-conductive state of the holding unit, and a control unit. The control unit is configured to perform the following processes: a first process of controlling the chemical supply unit to supply a chemical solution to the upper surface of the substrate held by the holding unit; a second process of controlling the switching unit to make the holding unit conductive at or before the time the chemical solution is being supplied to the upper surface of the substrate in the first process; a third process of controlling the switching unit to make the holding unit non-conductive after the second process; a fourth process of controlling the chemical supply unit and the cleaning solution supply unit to stop the supply of chemical solution to the upper surface of the substrate and then supply cleaning solution to the upper surface of the substrate after the third process; a fifth process of controlling the cleaning solution supply unit to stop the supply of cleaning solution to the upper surface of the substrate and then drying the substrate; and a sixth process of controlling the switching unit to make the holding unit conductive after the fifth process. In this case, the same effects and advantages as in Example 1 can be obtained.

[0115] Example 12. In the apparatus of Example 11, the control unit may be configured to further perform a seventh process after the sixth process by controlling the switching unit to put the holding unit into a non-conductive state. In this case, the same effects and advantages as the method of Example 2 can be obtained.

[0116] Example 13. In the apparatus of Example 11 or Example 12, the third process may include making the holding part non-conductive after the second process and when the chemical solution comes into contact with the holding part due to the supply of the chemical solution to the upper surface of the substrate in the first process. In this case, the same effects as the method of Example 3 can be obtained.

[0117] Example 14. The apparatus of Example 13 further includes an imaging unit, and the third process may include determining the timing when the chemical solution came into contact with the holding unit by imaging the upper surface of the substrate with the imaging unit and processing the captured image. In this case, the same effects and advantages as the method of Example 4 can be obtained.

[0118] Example 15. The apparatus of Example 13 may further include an ammeter, and the third process may include determining that the chemical solution has come into contact with the holding part when the ammeter detects that a current exceeding a predetermined value has flowed through the holding part. In this case, the same effects and advantages as the method of Example 5 can be obtained.

[0119] Example 16. In any of the apparatuses in Examples 11 to 15, the second process may include gradually lowering the resistance of the holding part, which is in a non-conductive state at a first resistance value when the holding part holds the outer edge of the substrate, until the time the chemical solution is supplied to the upper surface of the substrate in the second process, thereby making it conductive at a second resistance value. In this case, the same effects as the method in Example 6 can be obtained.

[0120] Example 17. In the apparatus of Example 16, the switching unit is a variable resistor, and the second process may include gradually lowering the resistance value from the first resistance value to the second resistance value using the variable resistor. In this case, the same effects as the method of Example 8 can be obtained.

[0121] Example 18. In any of the devices in Examples 11 to 15, the switching unit may be a changeover switch configured to switch between a conductive state and a non-conductive state of the holding unit by an ON / OFF operation. In this case, the same effects and advantages as in Example 9 can be obtained.

[0122] Example 19. In any of the devices in Examples 11 to 15, the holding part includes a first holding member that is conductive and a second holding member that is insulating, and the switching part may be a drive mechanism that switches between a conductive state and a non-conductive state of the holding part by holding the substrate with the first holding member and holding the substrate with the second holding member. In this case, the same effects as the method in Example 10 can be obtained.

[0123] Example 20. An example of a substrate processing program involves having the substrate processing device execute one of the methods from Examples 1 to 10. In this case, the same effects and advantages as the method in Example 1 can be obtained. [Explanation of symbols]

[0124] 1...Substrate processing system (substrate processing device), 10...Rotating holding unit, 13...Holding unit, 18...Movable member (holding unit), 18A...Movable member (first holding member), 18B...Movable member (second holding member), 40...Chemical solution supply unit, 50...Cleaning solution supply unit, 60...Imaging unit, 70...Ammeter, 100...Switching unit, Ctr...Controller (control unit), L1...Chemical solution, L2...Cleaning solution, R1...Resistance value (first resistance value), R2...Resistance value (second resistance value), W...Substrate, Wa...Top surface, Wc...Outer edge.

Claims

1. A first step involves holding the outer edge of the substrate with a holding part, A second step is to supply a chemical solution to the upper surface of the substrate, after the first step described above. A third step is to make the holding part electrically conductive at or before the time when the chemical solution is being supplied to the upper surface of the substrate in the second step, A fourth step is to make the holding part non-conductive after the third step, After the fourth step, a fifth step is to stop supplying the chemical solution to the upper surface of the substrate and supply cleaning solution to the upper surface of the substrate, A sixth step is to stop supplying the cleaning solution to the upper surface of the substrate and dry the substrate, A substrate processing method comprising a seventh step of making the holding portion electrically conductive after the sixth step.

2. The method according to claim 1, further comprising an eighth step of making the holding portion non-conductive after the seventh step.

3. The method according to claim 1, wherein the fourth step is performed after the third step and when the chemical solution comes into contact with the holding portion due to the supply of the chemical solution to the upper surface of the substrate in the second step, the holding portion is made non-conductive.

4. The method according to claim 3, wherein the fourth step includes determining the timing at which the chemical solution came into contact with the holding portion by imaging the upper surface of the substrate with the imaging unit and processing the captured image.

5. The method according to claim 3, wherein the fourth step includes determining that the chemical solution has come into contact with the holding portion by having an ammeter detect that a current of a predetermined value or more has flowed through the holding portion.

6. The method according to any one of claims 1 to 5, wherein the third step includes gradually lowering the resistance of the holding portion, which is in a non-conductive state at a first resistance value when the holding portion holds the outer edge of the substrate in the first step, to a conductive state at a second resistance value by the time the chemical solution is supplied to the upper surface of the substrate in the second step.

7. The aforementioned first resistance value is 10 ９ The second resistance value is greater than or equal to Ω, and the second resistance value is 10 ４ The method according to claim 6, wherein the value is less than or equal to Ω.

8. The method according to claim 6, wherein the third step includes gradually decreasing the resistance value from the first resistance value to the second resistance value using a variable resistor.

9. The method according to any one of claims 1 to 5, wherein the conductive state and the non-conductive state of the holding portion are switched by a changeover switch that performs an ON / OFF operation.

10. The holding portion includes a first holding member having conductivity and a second holding member having insulation properties. The method according to any one of claims 1 to 5, wherein the conductive state and the non-conductive state of the holding portion are switched by the substrate being held by the first holding member and by the substrate being held by the second holding member.

11. A holding part configured to hold the outer edge of the substrate, A chemical solution supply unit configured to supply chemical solution to the upper surface of the substrate, A cleaning liquid supply unit configured to supply cleaning liquid to the upper surface of the substrate, A switching unit configured to switch between a conductive state and a non-conductive state of the holding unit, It includes a control unit, The control unit, A first process involves controlling the chemical solution supply unit to supply the chemical solution to the upper surface of the substrate held by the holding unit, A second process is performed by controlling the switching unit to make the holding unit electrically conductive at or before the time when the chemical solution is being supplied to the upper surface of the substrate in the first process, After the second process, a third process is performed in which the switching unit is controlled to put the holding unit into a non-conductive state, After the third process, a fourth process is performed in which the chemical supply unit and the cleaning liquid supply unit are controlled to stop the supply of the chemical solution to the upper surface of the substrate, and then the cleaning liquid is supplied to the upper surface of the substrate. After the fourth process, the cleaning liquid supply unit is controlled to stop supplying the cleaning liquid to the upper surface of the substrate, and then the substrate is dried in a fifth process. A substrate processing apparatus configured to perform a sixth process after the fifth process by controlling the switching unit to make the holding unit conductive.

12. The apparatus according to claim 11, wherein the control unit is configured to perform a seventh process after the sixth process by controlling the switching unit to put the holding unit into a non-conductive state.

13. The apparatus according to claim 11, wherein the third process is performed after the second process and when the chemical solution comes into contact with the holding portion due to the supply of the chemical solution to the upper surface of the substrate in the first process, the holding portion is made non-conductive.

14. It also includes an imaging unit, The apparatus according to claim 13, wherein the third process includes determining the timing at which the chemical solution came into contact with the holding portion by imaging the upper surface of the substrate with the imaging unit and performing image processing on the captured image.

15. Furthermore, equipped with an ammeter, The apparatus according to claim 13, wherein the third process includes determining that the chemical solution has come into contact with the holding portion by detecting, using the ammeter, that a current exceeding a predetermined value has flowed through the holding portion.

16. The apparatus according to any one of claims 11 to 15, wherein the second process includes gradually lowering the resistance of the holding portion, which is in a non-conductive state at a first resistance value when the holding portion holds the outer edge of the substrate, until the time when the chemical solution is being supplied to the upper surface of the substrate in the second process, thereby causing it to be in a conductive state at a second resistance value.

17. The switching section is a variable resistor, The apparatus according to claim 16, wherein the second process includes gradually lowering the resistance value from the first resistance value to the second resistance value using the variable resistor.

18. The apparatus according to any one of claims 11 to 15, wherein the switching unit is a changeover switch configured to switch between a conductive state and a non-conductive state of the holding unit by an ON / OFF operation.

19. The holding portion includes a first holding member having conductivity and a second holding member having insulation properties. The apparatus according to any one of claims 11 to 15, wherein the switching unit is a drive mechanism that switches between a conductive state and a non-conductive state of the holding unit by holding the substrate with the first holding member and holding the substrate with the second holding member.

20. A substrate processing program that causes a substrate processing apparatus to perform the method according to any one of claims 1 to 10.

Images