Optical semiconductor equipment

JP2026125308APending Publication Date: 2026-08-03HAMAMATSU PHOTONICS KK
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
HAMAMATSU PHOTONICS KK
Filing Date
2025-01-22
Publication Date
2026-08-03

AI Technical Summary

Benefits of technology

【0021】 本発明によれば、配線基板の実装面上に実装された状態で配線基板の実装面側及びその反対側の両側において受光又は発光を行うことができる光半導体装置を提供することができる。

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Abstract

The present invention provides an optoelectronic device that receives or emits light on both the mounting surface side and the opposite side of a wiring board while mounted on the mounting surface of the wiring board. [Solution] The optical semiconductor device 1 comprises a lead 2, an optical semiconductor element 3, and a sealing member 7. The sealing member 7 includes a thick portion 40, a first thin portion 41 positioned on one side of the thick portion 40 in the X-axis direction, and a second thin portion 42 positioned on the other side of the thick portion 40 in the X-axis direction. The lead 2 includes a first portion 31 that protrudes from the thick portion 40 when viewed from one side in the Z-axis direction. The first portion 31 is in contact with the first thin portion 41 and extends along the first thin portion 41 to one side in the X-axis direction. The first portion 31 has a surface 31a exposed on one side in the Z-axis direction and a back surface 31b exposed on the other side in the Z-axis direction. The width L1 of the first thin portion 41 in the X-axis direction is greater than the width of the first portion 31 in the Y-axis direction.
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Description

Technical Field

[0001] The present invention relates to an optical semiconductor device.

Background Art

[0002] Patent Document 1 describes an optical semiconductor device in which an optical semiconductor element having a light receiving portion or a light emitting portion is sealed with a sealing resin. In this optical semiconductor device, the optical semiconductor element is disposed on a land, and a plurality of leads electrically connected to the optical semiconductor element are disposed around the land. The land and the plurality of leads are sealed with a sealing resin together with the optical semiconductor element, and the back surface of each lead exposed to the outside from the sealing resin (the surface opposite to the side on which the optical semiconductor element is disposed with respect to the land) forms an external electrode.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The optical semiconductor device described in Patent Document 1 is a device assumed to perform light reception or light emission on the mounting surface side of the wiring board in a state of being mounted on the mounting surface of the wiring board. However, depending on the use of the optical semiconductor device, it may be desirable to perform light reception or light emission on the side opposite to the mounting surface of the wiring board in a state of being mounted on the mounting surface of the wiring board.

[0005] Therefore, an object of the present invention is to provide an optical semiconductor device capable of performing light reception or light emission on both sides of the mounting surface side and the opposite side of the wiring board in a state of being mounted on the mounting surface of the wiring board.

Means for Solving the Problems

[0006] The optical semiconductor device of the present invention comprises [1] a lead, an optical semiconductor element disposed on one side of the lead in a first direction, and a sealing member that seals the optical semiconductor element so as to define an opening corresponding to at least a part of the optical semiconductor element, and that shields light emitted by the optical semiconductor element or light received by the optical semiconductor element, wherein the sealing member includes a thick portion having the opening and sealing the optical semiconductor element, a first thin portion formed integrally with the thick portion and disposed on one side of the thick portion in a second direction intersecting the first direction, and a second thin portion formed integrally with the thick portion and disposed on the other side of the thick portion in the second direction, wherein in the first direction The optical semiconductor device is characterized by the following: the thickness of the first thin portion and the second thin portion being smaller than the thickness of the thick portion in the first direction, the lead including a first portion that protrudes from the thick portion when viewed from one side in the first direction, the first portion being in contact with the first thin portion and extending along the first thin portion to one side in the second direction, the first portion having a first surface that is at least partially exposed to one side in the first direction and a first back surface that is at least partially exposed to the other side in the first direction, and the width of the first thin portion in the second direction being larger than the width of the first portion in a third direction that intersects both the first and second directions.

[0007] In the above-described optical semiconductor device, the optical semiconductor element is positioned on one side of the lead in a first direction, and the lead includes a first portion that protrudes from the thickened portion when viewed from one side in the first direction. The first portion of the lead is in contact with a first thinned portion positioned on one side of the thickened portion sealing the optical semiconductor element in a second direction intersecting the first direction, and extends along the first thinned portion to one side in the second direction. Furthermore, the first portion of the lead has a first back surface, at least a portion of which is exposed to the other side in the first direction. With this configuration, by electrically and physically connecting the first back surface of the first portion to the mounting surface of the wiring board, the first portion can function as a terminal, while light reception or emission by the optical semiconductor element can be performed on the mounting surface side of the wiring board. In addition, in the above-described optical semiconductor device, the first portion of the lead has a first surface, at least a portion of which is exposed to one side in the first direction. Furthermore, the sealing member includes a first thinned portion positioned on one side of the thickened portion in a second direction, and a second thinned portion positioned on the other side of the thickened portion in the second direction. Furthermore, the width of the first thin portion in the second direction is greater than the width of the first portion of the lead in the third direction, which intersects both the first and second directions. With this configuration, for example, by arranging the thick portion inside an opening formed in the wiring board and electrically and physically connecting the first surface of the first portion to the mounting surface of the wiring board, the first portion can function as a terminal while light reception or emission by the optical semiconductor element can be performed on the side opposite to the mounting surface of the wiring board. Moreover, because the width of the first thin portion in the second direction is greater than the width of the first portion of the lead in the third direction, sufficient width of the first thin portion located on the mounting surface of the wiring board can be secured, and as a result, the optical semiconductor device can be reliably supported. Thus, with the above optical semiconductor device, light reception or emission can be performed on both the side of the mounting surface of the wiring board and the side opposite to it when mounted on the mounting surface of the wiring board.

[0008] The optical semiconductor device of the present invention may also be [2] "the optical semiconductor device according to [1] above, wherein the thickness of the first thin portion in the first direction is the same as the thickness of the first portion in the first direction." According to this optical semiconductor device, the first surface and the first back surface of the first portion can be suitably exposed from the first thin portion. This makes it easy to electrically and physically connect the first surface of the first portion to the mounting surface of the wiring board. It also makes it easy to electrically and physically connect the first back surface of the first portion to the mounting surface of the wiring board.

[0009] The optical semiconductor device of the present invention may also be [3] "the optical semiconductor device according to [1] or [2] above, wherein the lead includes a second portion that protrudes from the thick portion when viewed from one side in the first direction, the second portion is in contact with the first thin portion and extends along the first thin portion to one side in the second direction, the second portion has a second surface that is exposed to at least a portion of the one side in the first direction and a second back surface that is exposed to at least a portion of the other side in the first direction, and at least a portion of the first thin portion extends from the first portion to the second portion along the third direction." With this optical semiconductor device, by electrically and physically connecting the second back surface of the second portion to the mounting surface of the wiring board, the second portion can function as a terminal while light reception or emission by an optical semiconductor element can be performed on the mounting surface side of the wiring board. Alternatively, by electrically and physically connecting the second surface of the second portion to the mounting surface of the wiring board, the second portion can function as a terminal while light reception or emission by an optical semiconductor element can be performed on the side opposite to the mounting surface of the wiring board. Furthermore, at least a portion of the first thin-walled section, which extends along the third direction from the first section to the second section, can suppress the passage of light between the first section and the second section. This suppresses the generation of stray light caused by the reflection of light passing between the first section and the second section.

[0010] The optical semiconductor device of the present invention may also be [4] "the optical semiconductor device according to any one of [1] to [3] above, wherein the lead includes a third portion that protrudes from the thick portion when viewed from one side in the first direction, the third portion is in contact with the second thin portion and extends along the second thin portion to the other side in the second direction, the third portion has a third surface that is exposed to at least a portion of the one side in the first direction and a third back surface that is exposed to at least a portion of the other side in the first direction, and the width of the second thin portion in the second direction is greater than the width of the third portion in the third direction." According to the optical semiconductor device, by electrically and physically connecting the third back surface of the third portion to the mounting surface of the wiring board, the third portion can function as a terminal while light reception or emission can be performed by an optical semiconductor element on the mounting surface side of the wiring board. Furthermore, by electrically and physically connecting the third surface of the third portion to the mounting surface of the wiring board, the third portion can function as a terminal while light reception or emission can be performed by an optical semiconductor element on the side opposite to the mounting surface of the wiring board. Furthermore, since the width of the second thin-walled portion in the second direction is greater than the width of the third portion of the lead in the third direction, sufficient width of the second thin-walled portion located on the mounting surface of the wiring board can be secured, and as a result, the optoelectronic device can be supported more reliably.

[0011] The optical semiconductor device of the present invention may also be [5] "the optical semiconductor device according to [4] above, wherein the lead includes a fourth portion that protrudes from the thickened portion when viewed from one side in the first direction, the fourth portion is in contact with the second thinned portion and extends along the second thinned portion to the other side in the second direction, the fourth portion has a fourth surface that is exposed to at least a portion of the one side in the first direction and a fourth back surface that is exposed to at least a portion of the other side in the first direction, and at least a portion of the second thinned portion extends along the third direction from the third portion to the fourth portion." According to the optical semiconductor device, by electrically and physically connecting the fourth back surface of the fourth portion to the mounting surface of the wiring board, the fourth portion can function as a terminal while light reception or emission by an optical semiconductor element can be performed on the mounting surface side of the wiring board. Furthermore, by electrically and physically connecting the fourth surface of the fourth portion to the mounting surface of the wiring board, the fourth portion can function as a terminal while light reception or emission by an optical semiconductor element can be performed on the side opposite to the mounting surface of the wiring board. Furthermore, at least a portion of the second thin-walled section, which extends along the third direction from the third to the fourth section, can suppress the passage of light between the third and fourth sections. This suppresses the generation of stray light caused by the reflection of light passing between the third and fourth sections.

[0012] The optical semiconductor device of the present invention may also be [6] "an optical semiconductor device according to any one of [1] to [5] above, wherein the sum of the widths of the first thin portion in the third direction is greater than the width of the first portion in the second direction." With this optical semiconductor device, when light reception or emission is performed by an optical semiconductor element on the side opposite to the mounting surface of the wiring board, the width of the first thin portion located on the mounting surface of the wiring board can be sufficiently secured, and as a result, the optical semiconductor device can be supported more reliably.

[0013] The optical semiconductor device of the present invention may also be [7] "an optical semiconductor device according to any one of [1] to [6] above, wherein the width of the first portion in the second direction is greater than 1.5 times the width of the first portion in the third direction." With this optical semiconductor device, when light reception or emission is performed by an optical semiconductor element on the side opposite to the mounting surface of the wiring board, the width of the first portion located on the mounting surface of the wiring board can be sufficiently secured. As a result, the optical semiconductor device can be more reliably supported by the first portion of the lead together with the first thin portion.

[0014] The optical semiconductor device of the present invention may also be [8] "an optical semiconductor device according to any one of [1] to [7] above, wherein a portion of at least one of the two faces of the leads facing each other in the first direction is recessed toward the one or the other side in the first direction relative to the other portion of the at least one face, and is covered by the sealing member." The optical semiconductor device can suppress the generation of noise that may occur due to the exposure of a portion of at least one of the two faces of the leads (for example, noise that occurs due to the portion contacting the wiring board).

[0015] The optical semiconductor device of the present invention may also be [9] "the optical semiconductor device according to [8] above, further comprising a wire, the lead further including a connecting portion connected to the first portion, the connecting portion having a fifth surface on one side in the first direction and a fifth back surface on the other side in the first direction, one end of the wire being connected to the fifth surface, the fifth surface being covered together with the wire by the thickened portion, and at least a portion of the fifth back surface being located on one side in the first direction with respect to the first back surface and covered by the thickened portion." With this optical semiconductor device, for example, by connecting the other end of the wire to an electronic component such as an optical semiconductor element sealed by the thickened portion, the electronic component and the first portion of the lead can be electrically connected to each other via the wire and the connecting portion. Furthermore, since at least a portion of the fifth back surface of the connecting portion is covered by the thickened portion, it is possible to suppress the generation of noise that may occur due to the exposure of at least a portion of the fifth back surface (for example, noise caused by at least a portion of the fifth back surface contacting a wiring board).

[0016] The optical semiconductor device of the present invention may also be

[10] "an optical semiconductor device according to any one of [1] to [9] above, further comprising a processing circuit disposed on one side of the lead in the first direction, the processing circuit being sealed together with the optical semiconductor element by the thickened portion, the lead having an opening formed therein between the optical semiconductor element and the processing circuit when viewed from the first direction, and a part of the thickened portion being disposed in the opening of the lead." According to this optical semiconductor device, when sealing the optical semiconductor element and the processing circuit with a sealing member, a part of the thickened portion of the sealing member is disposed in the opening located between the optical semiconductor element and the processing circuit, thereby allowing the part of the thickened portion to function as an anchor. This ensures that the optical semiconductor element and the processing circuit are reliably sealed by the thickened portion. Furthermore, by allowing the opening to function as an alignment mark, the optical semiconductor element and the processing circuit can be easily positioned at a predetermined location on the lead with respect to the opening. Furthermore, the optical semiconductor device can be easily positioned at a predetermined location on a wiring board with respect to the opening.

[0017] The optical semiconductor device of the present invention may also be

[11] "an optical semiconductor device according to any one of [1] to

[10] above, wherein the sealing member is formed of a black resin." With this optical semiconductor device, the coefficient of linear expansion of the sealing member is smaller compared to the case in which the sealing member is formed of, for example, a transparent resin. This makes it possible to suppress deformation of the sealing member due to temperature changes, and as a result, the reliability of the optical semiconductor device can be improved.

[0018] The optical semiconductor device of the present invention may also be

[12] "the optical semiconductor device according to any one of [1] to

[11] above, wherein the thickened portion has a pair of sides facing each other in the second direction, the first thinned portion and the second thinned portion are formed on each of the pair of sides, and the pair of sides are inclined with respect to the first direction such that the distance between the pair of sides in the second direction decreases as you move toward one side in the first direction." With this optical semiconductor device, the thickened portion can be easily positioned inside an opening by sliding the pair of sides of the thickened portion against the edge of the opening formed in the wiring board. This makes it easy to receive or emit light by an optical semiconductor element on the side opposite to the mounting surface of the wiring board.

[0019] The optical semiconductor device of the present invention may also be

[13] "an optical semiconductor device according to any one of [1] to

[12] above, further comprising an optical element disposed on the optical semiconductor element, wherein at least a part of the optical element corresponds to the opening of the thickened portion." With this optical semiconductor device, light is incident on the optical semiconductor element from the outside via the optical element, so light can be suitably incident on the optical semiconductor element. Alternatively, light is emitted from the optical semiconductor element to the outside via the optical element, so light can be suitably emitted from the optical semiconductor element.

[0020] The optical semiconductor device of the present invention may also be

[14] "an optical semiconductor device according to any one of [1] to

[13] above, wherein the width of the first thin portion and the second thin portion in the second direction is greater than the thickness of the thick portion in the first direction." With this optical semiconductor device, when light reception or emission is performed by an optical semiconductor element on the side opposite to the mounting surface of the wiring board, the widths of the first thin portion and the second thin portion located on the mounting surface of the wiring board can be sufficiently secured, and as a result, the optical semiconductor device can be supported more reliably. [Effects of the Invention]

[0021] According to the present invention, it is possible to provide an optical semiconductor device that can receive or emit light on both sides of the mounting surface of a wiring board, namely, the mounting surface side and the opposite side thereof, in a state where it is mounted on the mounting surface of the wiring board.

Brief Description of the Drawings

[0022] [Figure 1] It is a perspective view of an optical semiconductor device according to an embodiment. [Figure 2] It is a partial perspective view of the optical semiconductor device shown in FIG. 1. [Figure 3] It is a bottom view of the optical semiconductor device shown in FIG. 1. [Figure 4] It is a cross-sectional view for explaining the mounting mode of the optical semiconductor device shown in FIG. 1. [Figure 5] It is a perspective view for explaining an example of the manufacturing method of the optical semiconductor device shown in FIG. 1. [Figure 6] It is a perspective view for explaining an example of the manufacturing method of the optical semiconductor device shown in FIG. 1. [Figure 7] It is a perspective view for explaining an example of the manufacturing method of the optical semiconductor device shown in FIG. 1. [Figure 8] It is a perspective view of an optical semiconductor device according to a modified example. [Figure 9] It is a perspective view of an optical semiconductor device according to a modified example. [Figure 10] It is a perspective view of an optical semiconductor device according to a modified example.

Embodiments for Carrying Out the Invention

[0023] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In each figure, the same or corresponding parts are denoted by the same reference numerals, and redundant explanations are omitted. [Configuration of the Optical Semiconductor Device]

[0024] As shown in Figures 1, 2, and 3, the optical semiconductor device 1 comprises a lead 2, an optical semiconductor element 3, a processing circuit 4, an optical element 5, a plurality of wires 6, and a sealing member 7. The optical semiconductor device 1 is used, for example, as an in-vehicle light detection device. Hereinafter, the direction in which the lead 2 and the optical semiconductor element 3 are aligned will be referred to as the Z-axis direction (first direction), the direction perpendicular to the Z-axis direction will be referred to as the X-axis direction (second direction), and the direction perpendicular to both the Z-axis and X-axis directions will be referred to as the Y-axis direction (third direction). Furthermore, when simply referring to "thickness," it means the thickness in the Z-axis direction.

[0025] Lead 2 supports the optical semiconductor element 3 and the processing circuit 4, and is a lead frame (wiring member) used for electrical connection between these electronic components and the external wiring board. Lead 2 is formed, for example, by plating a metal member made of copper with NiPdAu or the like. Lead 2 is formed, for example, by press working on a metal plate.

[0026] Lead 2 has a placement portion 20 located in the central part of Lead 2. The shape of the placement portion 20 when viewed from the Z-axis direction is, for example, rectangular. The placement portion 20 has a surface 20a on one side in the Z-axis direction (upper side in Figure 2) and a back surface 20b on the other side in the Z-axis direction (lower side in Figure 2, see Figure 3).

[0027] The optical semiconductor element 3 and the processing circuit 4 are fixed to the surface 20a, for example, by a conductive adhesive. In other words, the optical semiconductor element 3 and the processing circuit 4 are arranged on one side in the Z-axis direction with respect to the lead 2. An opening 20c is formed in the arrangement portion 20, which is located between the optical semiconductor element 3 and the processing circuit 4 when viewed from the Z-axis direction. The shape of the opening 20c when viewed from the Z-axis direction is, for example, rectangular.

[0028] The optical semiconductor element 3 is a light-receiving element. The light-receiving element is, for example, a photodiode chip. The optical axis of the light received by the optical semiconductor element 3 is along the Z-axis direction. The shape of the optical semiconductor element 3 is, for example, a rectangular plate with the Z-axis direction as the thickness direction.

[0029] The optical semiconductor element 3 and the processing circuit 4 are electrically connected by wire 6. The processing circuit 4 is an IC chip that processes the electrical signal output from the optical semiconductor element 3 according to the amount of light received.

[0030] The optical element 5 is placed on the optical semiconductor element 3. The optical element 5 is fixed to the optical semiconductor element 3, for example, by a light-transmitting adhesive. The optical element 5 is, for example, a bandpass filter.

[0031] Lead 2 further has connection portions 21, 22, 23, and 24. The connection portions 21 to 24 are arranged around the placement portion 20.

[0032] The connecting portions 21 and 22 are positioned on one side of the arrangement portion 20 in the X-axis direction (right side in Figure 3). The connecting portion 21 is positioned on one side of the connecting portion 22 in the Y-axis direction (upper side in Figure 3). When viewed from the Z-axis direction, the shapes of the connecting portions 21 and 22 are, for example, L-shaped. The connecting portion 21 has a surface (fifth surface) 21a on one side in the Z-axis direction and a back surface (fifth back surface) 21b on the other side in the Z-axis direction. The connecting portion 22 has a surface 22a on one side in the Z-axis direction and a back surface 22b on the other side in the Z-axis direction.

[0033] The connecting portions 23 and 24 are positioned on the other side of the X-axis direction relative to the placement portion 20 (left side in Figure 3). The connecting portion 23 is positioned on one side of the Y-axis direction relative to the connecting portion 24 (upper side in Figure 3). When viewed from the Z-axis direction, the shape of the connecting portion 23 is, for example, a cross shape. The connecting portion 23 is connected to the placement portion 20. When viewed from the Z-axis direction, the shape of the connecting portion 24 is, for example, an L-shape. The connecting portion 23 has a surface 23a on one side in the Z-axis direction and a back surface 23b on the other side in the Z-axis direction. The connecting portion 24 has a surface 24a on one side in the Z-axis direction and a back surface 24b on the other side in the Z-axis direction.

[0034] The surface 21a of the processing circuit 4 and the connection part 21 are electrically connected by wire 6. The surface 22a of the processing circuit 4 and the connection part 22 are electrically connected by wire 6. The surface 23a of the processing circuit 4 and the connection part 23 are electrically connected by wire 6. The surface 24a of the processing circuit 4 and the connection part 24 are electrically connected by wire 6. As a result, the first part 31, second part 32, third part 33, and fourth part 34 of the lead 2, described later, function as a power supply terminal, a signal output terminal, a ground terminal, and a reset terminal, respectively.

[0035] The sealing member 7 seals the optical semiconductor element 3, the processing circuit 4, the optical element 5, and the wire 6. The sealing member 7 shields the light received by the optical semiconductor element 3. The sealing member 7 is integrally formed from, for example, black resin. The sealing member 7 has a thick portion 40, a first thin portion 41, and a second thin portion 42.

[0036] The thickened portion 40 has a bottom portion 51 and a protruding portion 52. When viewed from the Z-axis direction, the bottom portion 51 is positioned around the periphery of the placement portion 20 and around each of the connection portions 21 to 24. A part 51a of the bottom portion 51 (a part of the thickened portion 40) is positioned in the opening 20c of the placement portion 20. The thickness of the bottom portion 51 is the same as the thickness of the placement portion 20 and the connection portions 21 to 24, respectively.

[0037] The protruding portion 52 encloses the optical semiconductor element 3, processing circuit 4, optical element 5, and wire 6. Note that the protruding portion 52 is not shown in Figure 2. The protruding portion 52 protrudes from the bottom portion 51 on one side in the Z-axis direction (upper side in Figure 1). The protruding portion 52 is formed integrally with the bottom portion 51. The protruding portion 52 is positioned on the surface 20a of the placement portion 20 and on the surfaces 21a to 24a of the connection portions 21 to 24. Surfaces 20a to 24a are covered by the protruding portion 52 together with the optical semiconductor element 3, processing circuit 4, optical element 5, and wire 6. When the optical semiconductor device 1 is viewed from one side in the Z-axis direction (upper side in Figure 1), the entire placement portion 20 and the entirety of each of the connection portions 21 to 24 are not exposed (they are covered by the protruding portion 52). In contrast, the entire back surface 20b of the placement portion 20 and the entire back surfaces 21b to 24b of the connecting portions 21 to 24 are exposed on the other side in the Z-axis direction (the lower side of Figure 1, see Figure 3). The protruding portion 52 has an upper surface 52a, a pair of side surfaces 52b, and a pair of side surfaces 52c.

[0038] The top surface 52a is the surface opposite to the bottom portion 51 in the Z-axis direction. The shape of the top surface 52a when viewed from the Z-axis direction is, for example, rectangular. The pair of side surfaces 52b face each other in the X-axis direction. The pair of side surfaces 52b are inclined with respect to the Z-axis direction such that the distance between the pair of side surfaces 52b in the X-axis direction decreases as you move toward one side in the Z-axis direction (the upper side in Figure 1). In other words, the shape of the protruding portion 52 when viewed from the Y-axis direction is trapezoidal. The pair of side surfaces 52c are inclined with respect to the Z-axis direction such that the distance between the pair of side surfaces 52c in the Y-axis direction decreases as you move toward one side in the Z-axis direction. In other words, the shape of the protruding portion 52 when viewed from the X-axis direction is trapezoidal.

[0039] The protruding portion 52 defines an aperture 52d corresponding to a part of the optical semiconductor element 3 and a part of the optical element 5, respectively. The aperture 52d is open on the upper surface 52a. Light incident on the aperture 52d from the outside passes through the optical element 5 and is incident on the optical semiconductor element 3. In this embodiment, the aperture 52d functions as an aperture that focuses the light incident on the optical semiconductor element 3. The shape of the aperture 52d when viewed from the Z-axis direction is, for example, circular.

[0040] The first thin-walled portion 41 and the second thin-walled portion 42 are formed integrally with the thick-walled portion 40. The first thin-walled portion 41 is located on one side of the thick-walled portion 40 in the X-axis direction (right side in Figure 3). The second thin-walled portion 42 is located on the other side of the thick-walled portion 40 in the X-axis direction (left side in Figure 3). Each of the first thin-walled portion 41 and the second thin-walled portion 42 is formed at the lower end of each of the pair of side surfaces 52b.

[0041] The first thin-walled portion 41 has a first portion 61, a second portion 62, and a third portion 63. The first portion 61, the second portion 62, and the third portion 63 extend from the bottom portion 51 to one side in the X-axis direction. When viewed from the Z-axis direction, the shapes of the first portion 61, the second portion 62, and the third portion 63 are, for example, rectangular. The first portion 61 is positioned between the second portion 62 and the third portion 63. The first portion 61 and the second portion 62 sandwich the first portion 31 of the lead 2 in the Y-axis direction. The first portion 61 and the third portion 63 sandwich the second portion 32 of the lead 2 in the Y-axis direction. The first portion 61 extends along the Y-axis direction across the entire region R1 between the first portion 31 and the second portion 32 of the lead 2.

[0042] As shown in Figure 1, in the first thin-walled portion 41, the width of the first portion 61 in the X-axis direction, the width of the second portion 62 in the X-axis direction, and the width of the third portion 63 in the X-axis direction are all the same. Hereinafter, the width of the first thin-walled portion 41 in the X-axis direction will be referred to as width L1.

[0043] As shown in Figure 3, the width W1 of the first portion 61 in the Y-axis direction is greater than the width W2 of the second portion 62 and the width W3 of the third portion 63 in the Y-axis direction. The width W2 of the second portion 62 is, for example, the same as the width W3 of the third portion 63.

[0044] The second thin-walled portion 42 has a first portion 71, a second portion 72, and a third portion 73. The first portion 71, the second portion 72, and the third portion 73 extend from the bottom portion 51 to the other side in the X-axis direction. When viewed from the Z-axis direction, the shapes of the first portion 71, the second portion 72, and the third portion 73 are, for example, rectangular. The first portion 71 is positioned between the second portion 72 and the third portion 73. The first portion 71 and the second portion 72 sandwich the third portion 33 of the lead 2 in the Y-axis direction. The first portion 71 and the third portion 73 sandwich the fourth portion 34 of the lead 2 in the Y-axis direction. The first portion 71 extends along the Y-axis direction over the entire region R2 between the third portion 33 and the fourth portion 34 of the lead 2.

[0045] As shown in Figure 1, in the second thin-walled portion 42, the width of the first portion 71 in the X-axis direction, the width of the second portion 72 in the X-axis direction, and the width of the third portion 73 in the X-axis direction are all the same. Hereinafter, the width of the second thin-walled portion 42 in the X-axis direction will be referred to as width L2. The width L1 of the first thin-walled portion 41 and the width L2 of the second thin-walled portion 42 are all the same.

[0046] As shown in Figure 3, the width W4 of the first portion 71 in the Y-axis direction is greater than the width W5 of the second portion 72 in the Y-axis direction and the width W6 of the third portion 73 in the Y-axis direction. The width W5 of the second portion 72 is, for example, the same as the width W6 of the third portion 73.

[0047] As shown in Figure 1, in the first thin-walled section 41, the thicknesses of the first part 61, the second part 62, and the third part 63 are all the same. In the second thin-walled section 42, the thicknesses of the first part 71, the second part 72, and the third part 73 are all the same. Hereinafter, the thickness of the first thin-walled section 41 will be referred to as T1, and the thickness of the second thin-walled section 42 will be referred to as T2. The thickness T1 of the first thin-walled section 41 and the thickness T2 of the second thin-walled section 42 are all the same.

[0048] The thickness T1 of the first thin-walled portion 41 and the thickness T2 of the second thin-walled portion 42 are each smaller than the thickness T3 of the thick-walled portion 40 (the total thickness of the bottom portion 51 and the protruding portion 52). If the thickness of the first thin-walled portion 41 and the second thin-walled portion 42 varies partially, then thickness T1 and T2 represent the maximum thickness of the first thin-walled portion 41 and the second thin-walled portion 42, respectively. If the thickness of the thick-walled portion 40 varies partially, then thickness T3 represents the maximum thickness of the thick-walled portion 40. The thickness of the thick-walled portion 40 at any given location is greater than the maximum thickness of the first thin-walled portion 41 and the second thin-walled portion 42, respectively.

[0049] Lead 2 further comprises a first portion 31, a second portion 32, a third portion 33, and a fourth portion 34. Each of the first portion 31, second portion 32, third portion 33, and fourth portion 34 functions as a terminal. When viewed from the Z-axis direction, the shape of each of the first portion 31, second portion 32, third portion 33, and fourth portion 34 is, for example, rectangular. When the optical semiconductor device 1 is viewed from both sides in the Z-axis direction, the entirety of each of the first portion 31, second portion 32, third portion 33, and fourth portion 34 is exposed. Each of the first portion 31, second portion 32, third portion 33, and fourth portion 34 corresponds to the portion of Lead 2 that is not covered by the thickened portion 40. Each of the first portion 31, second portion 32, third portion 33, and fourth portion 34 protrudes from the thickened portion 40 when viewed from one side in the Z-axis direction (the upper side in Figure 1). The first part 31, the second part 32, the third part 33, and the fourth part 34 are each positioned on the outside of the thickened portion 40 when viewed from one side in the Z-axis direction.

[0050] The first portion 31 is connected to the connecting portion 21. The first portion 31 is in contact with both the first portion 61 and the second portion 62 of the first thin-walled portion 41 and extends along both the first portion 61 and the second portion 62 to one side in the X-axis direction (right side in Figure 3). The first portion 31 is positioned to one side in the Y-axis direction (upper side in Figure 3) relative to the second portion 32. The first portion 31 has a surface (first surface) 31a that is entirely exposed on one side in the Z-axis direction (upper side in Figure 1) and a back surface (first back surface) 31b that is entirely exposed on the other side in the Z-axis direction (lower side in Figure 1, see Figure 3). The first portion 31 corresponds to the entire surface 31a that is exposed to the outside on the outside of the thick-walled portion 40. The thickness T10 of the first portion 31 is the same as the thickness T1 of the first thin-walled portion 41. The width L10 of the first portion 31 in the X-axis direction is the same as the width L1 of the first thin-walled portion 41.

[0051] The second portion 32 is connected to the connecting portion 22. The second portion 32 is in contact with both the first portion 61 and the third portion 63 of the first thin-walled portion 41 and extends along both the first portion 61 and the third portion 63 to one side in the X-axis direction (right side in Figure 3). The second portion 32 has a surface (second surface) 32a that is entirely exposed on one side in the Z-axis direction (upper side in Figure 1) and a back surface (second back surface) 32b that is entirely exposed on the other side in the Z-axis direction (lower side in Figure 1, see Figure 3). The second portion 32 corresponds to the entire surface 32a that is exposed to the outside on the outside of the thick-walled portion 40. The thickness T20 of the second portion 32 of lead 2 is the same as the thickness T1 of the first thin-walled portion 41. The width L20 of the second portion 32 in the X-axis direction is the same as the width L1 of the first thin-walled portion 41.

[0052] The third portion 33 is connected to the connecting portion 23. The third portion 33 is in contact with both the first portion 71 and the second portion 72 of the second thin-walled portion 42 and extends along both the first portion 71 and the second portion 72 to the other side in the X-axis direction (left side in Figure 3). The third portion 33 is positioned on one side in the Y-axis direction (upper side in Figure 3) relative to the fourth portion 34. The third portion 33 has a surface (third surface) 33a that is entirely exposed on one side in the Z-axis direction (upper side in Figure 1) and a back surface (third back surface) 33b that is entirely exposed on the other side in the Z-axis direction (lower side in Figure 1, see Figure 3). The third portion 33 corresponds to the entire surface 33a that is exposed to the outside on the outside of the thick-walled portion 40. The thickness of the third portion 33 of lead 2 is the same as the thickness T2 of the second thin-walled portion 42. The width of the third portion 33 in the X-axis direction is the same as the width L2 of the second thin-walled portion 42.

[0053] The fourth portion 34 is connected to the connecting portion 24. The fourth portion 34 is in contact with both the first portion 71 and the third portion 73 of the second thin-walled portion 42 and extends along both the first portion 71 and the third portion 73 to the other side in the X-axis direction (left side in Figure 3). The fourth portion 34 has a surface (fourth surface) 34a that is entirely exposed on one side in the Z-axis direction (upper side in Figure 1) and a back surface (fourth back surface) 34b that is entirely exposed on the other side in the Z-axis direction (lower side in Figure 1, see Figure 3). The fourth portion 34 corresponds to the entire surface 34a that is exposed to the outside on the outside of the thick-walled portion 40. The thickness of the fourth portion 34 of lead 2 is the same as the thickness T2 of the second thin-walled portion 42. The width of the fourth portion 34 in the X-axis direction is the same as the width L2 of the second thin-walled portion 42.

[0054] As shown in Figures 1 and 3, the width L1 of the first thin-walled portion 41 is greater than the width W10 of the first portion 31 of the lead 2 in the Y-axis direction and greater than the width W20 of the second portion 32 of the lead 2 in the Y-axis direction. The width L2 of the second thin-walled portion 42 is greater than the width W30 of the third portion 33 of the lead 2 in the Y-axis direction and greater than the width W40 of the fourth portion 34 of the lead 2 in the Y-axis direction. The widths W10 of the first portion 31, W20 of the second portion 32, W30 of the third portion 33, and W40 of the fourth portion 34 are, for example, the same as each other.

[0055] The sum of the widths of the first thin-walled portion 41 in the Y-axis direction is greater than the width L10 of the first part 31 of the lead 2 in the X-axis direction, and greater than the width L20 of the second part 32 of the lead 2 in the X-axis direction. In other words, the sum is greater than the width L1 of the first thin-walled portion 41. "The sum of the widths of the first thin-walled portion 41 in the Y-axis direction" means the sum of the widths of each part of the first thin-walled portion 41 when the first thin-walled portion 41 is composed of multiple parts, as in this embodiment, and the width of the single part when the first thin-walled portion 41 is composed of a single part. In this embodiment, the sum is the sum of the widths W1 of the first part 61, W2 of the second part 62, and W3 of the third part 63.

[0056] The sum of the widths of the second thin-walled portion 42 in the Y-axis direction is greater than the width of the third portion 33 of the lead 2 in the X-axis direction and greater than the width of the fourth portion 34 of the lead 2 in the X-axis direction. In other words, the sum is greater than the width L2 of the second thin-walled portion 42. "The sum of the widths of the second thin-walled portion 42 in the Y-axis direction" means the sum of the widths of each portion of the second thin-walled portion 42 when the second thin-walled portion 42 is composed of multiple portions, as in this embodiment, and the width of the single portion when the second thin-walled portion 42 is composed of a single portion. In this embodiment, the sum is the sum of the width W4 of the first portion 71, the width W5 of the second portion 72, and the width W6 of the third portion 73.

[0057] As shown in Figures 1 and 3, the width L10 of the first portion 31 of lead 2 is greater than 1.5 times the width W10 of the first portion 31. The width L20 of the second portion 32 of lead 2 is greater than 1.5 times the width W20 of the second portion 32. Similarly, the width of the third portion 33 of lead 2 in the X-axis direction is greater than 1.5 times the width W30 of the third portion 33. The width of the fourth portion 34 of lead 2 in the X-axis direction is greater than 1.5 times the width W40 of the fourth portion 34.

[0058] As shown in Figure 1, the width L1 of the first thin-walled portion 41 is greater than the thickness T3 of the thick-walled portion 40. That is, the width L10 of the first portion 31 and the width L20 of the second portion 32 are both greater than the thickness T3 of the thick-walled portion 40. Similarly, the width L2 of the second thin-walled portion 42 is greater than the thickness T3 of the thick-walled portion 40. That is, the width of the third portion 33 in the X-axis direction and the width of the second portion 32 in the X-axis direction are both greater than the thickness T3 of the thick-walled portion 40.

[0059] The mounting configuration of the optical semiconductor device 1 will be described with reference to Figures 4(a) and 4(b). In the examples of Figures 4(a) and 4(b), the optical semiconductor device 1 is mounted on a wiring board WB having a mounting surface Sa and a surface Sb opposite to the mounting surface Sa.

[0060] When the optical semiconductor device 1 is mounted on the mounting surface Sa and light reception is performed by the optical semiconductor element 3 on the mounting surface Sa side of the wiring board WB, the optical semiconductor device 1 is mounted on the mounting surface Sa such that its bottom surface faces the mounting surface Sa, as shown in Figure 4(a). The back surfaces 31b to 34b of the lead 2 (see Figure 3) are electrically and physically connected to the mounting surface Sa. This allows the first part 31, the second part 32, the third part 33, and the fourth part 34 to function as terminals, while light reception by the optical semiconductor element 3 is performed on the mounting surface Sa side.

[0061] When the optical semiconductor device 1 is mounted on the mounting surface Sa and light reception is performed by the optical semiconductor element 3 on the surface Sb of the wiring substrate WB, the optical semiconductor device 1 is mounted on the mounting surface Sa such that, as shown in Figure 4(b), the thick portion 40 is positioned inside the aperture WBa formed in the wiring substrate WB, and the first thin portion 41 and the second thin portion 42 are positioned on the mounting surface Sa. The surfaces 31a to 34a of the lead 2 (see Figures 1 and 2) are electrically and physically connected to the mounting surface Sa. This allows the first portion 31, the second portion 32, the third portion 33, and the fourth portion 34 to function as terminals, while light reception by the optical semiconductor element 3 is performed on the surface Sb. [Manufacturing method for optoelectronic devices]

[0062] The manufacturing method of the optical semiconductor device 1 will be explained with reference to Figures 5 to 7. First, as shown in Figure 5, a metal plate MP on which multiple leads 2 are formed is prepared. Each of the multiple leads 2 corresponds to one lead 2 shown in Figures 1 to 3.

[0063] Next, as shown in Figure 6, the optical semiconductor element 3 and the processing circuit 4 are fixed to the respective placement portions 20 of the multiple leads 2 with conductive adhesive. Subsequently, the wire 6 is connected to both the optical semiconductor element 3 and the processing circuit 4, the wire 6 is connected to both the processing circuit 4 and the connection portion 21, the wire 6 is connected to both the processing circuit 4 and the connection portion 22, the wire 6 is connected to both the processing circuit 4 and the connection portion 23, and the wire 6 is connected to both the processing circuit 4 and the connection portion 24. Next, the optical element 5 is fixed to the optical semiconductor element 3 with a translucent adhesive.

[0064] Next, a mold (not shown) is placed on the optical semiconductor element 3, processing circuit 4, and optical element 5, and resin material is introduced into the inside of the mold. The introduced resin material is cured (for example, by photocuring with ultraviolet light, heat curing, etc.) to form a plurality of sealing members 7 as shown in Figure 7. Subsequently, the metal plate MP and sealing members 7 are cut (divided into individual pieces) along predetermined boundaries, for example by dicing. This manufactures a plurality of optical semiconductor devices 1. With this, the manufacturing process of the optical semiconductor device 1 is completed. [Mechanism of Action and Effects]

[0065] In the optoelectronic device 1, the optical semiconductor element 3 is positioned on one side in the Z-axis direction relative to the lead 2, and the lead 2 includes a first portion 31 that protrudes from the thick portion 40 when viewed from one side in the Z-axis direction. The first portion 31 of the lead 2 is in contact with a first thin portion 41 positioned on one side in the X-axis direction relative to the thick portion 40 that seals the optical semiconductor element 3, and extends along the first thin portion 41 to one side in the X-axis direction. Furthermore, the first portion 31 of the lead 2 has a back surface 31b that is exposed on the other side in the Z-axis direction. With this configuration, by electrically and physically connecting the back surface 31b of the first portion 31 to the mounting surface Sa of the wiring board WB, the first portion 31 can function as a terminal, and light can be received by the optical semiconductor element 3 on the mounting surface Sa side of the wiring board WB. In addition, in the optoelectronic device 1, the first portion 31 of the lead 2 has a surface 31a that is entirely exposed on one side in the Z-axis direction. Furthermore, the sealing member 7 has a first thin portion 41 positioned on one side in the X-axis direction relative to the thick portion 40, and a second thin portion 42 positioned on the other side in the X-axis direction relative to the thick portion 40. Moreover, the width L1 of the first thin portion 41 is greater than the width W10 of the first portion 31 of the lead 2. With this configuration, the thick portion 40 is positioned inside the opening WBa formed in the wiring board WB, and the surface 31a of the first portion 31 is electrically and physically connected to the mounting surface Sa, allowing the first portion 31 to function as a terminal while light reception by the optical semiconductor element 3 is possible on the side opposite to the mounting surface Sa. In addition, the width of the first thin portion 41 located on the mounting surface Sa can be sufficiently secured, and as a result, the optical semiconductor device 1 can be reliably supported. Thus, with the optical semiconductor device 1, light reception can be performed on both the mounting surface Sa side and the opposite side of the wiring board WB when it is mounted on the mounting surface Sa of the wiring board WB.

[0066] The optical semiconductor device 1 can employ both the mounting method shown in Figure 4(a) (hereinafter referred to as "surface mounting") and the mounting method shown in Figure 4(b) (hereinafter referred to as "backside mounting"). If an optical semiconductor device suitable for surface mounting and an optical semiconductor device suitable for backside mounting were to be manufactured separately, the cost may increase. In contrast, as described above, the optical semiconductor device 1 has a configuration suitable for both surface mounting and backside mounting, making it possible to suppress such cost increases.

[0067] In the optoelectronic device 1, the thickness T1 of the first thin-walled portion 41 is the same as the thickness T10 of the first portion 31. With this configuration, the front surface 31a and back surface 31b of the first portion 31 can be suitably exposed from the first thin-walled portion 41. This makes it easy to electrically and physically connect the front surface 31a and back surface 31b to the mounting surface Sa of the wiring board WB.

[0068] In the optical semiconductor device 1, the first portion 61 of the first thin portion 41 extends along the Y-axis direction across the entire region R1 between the first portion 31 and the second portion 32 of the lead 2. With this configuration, when mounted on the back surface as shown in Figure 4(b), the first portion 61 can suppress the passage of light between the first portion 31 and the second portion 32. This suppresses the generation of stray light caused by the reflection of light passing between the first portion 31 and the second portion 32.

[0069] In the optoelectronic device 1, the width L2 of the second thin portion 42 is greater than the width W30 of the third portion 33 of the lead 2. With this configuration, the width of the second thin portion 42 located on the mounting surface Sa of the wiring board WB can be sufficiently secured, and as a result, the optoelectronic device 1 can be supported more reliably.

[0070] In the optical semiconductor device 1, the first portion 71 of the second thin portion 42 extends along the Y-axis direction across the entire region R2 between the third portion 33 and the fourth portion 34 of the lead 2. With this configuration, when mounted on the back surface as shown in Figure 4(b), the first portion 71 can suppress the passage of light between the third portion 33 and the fourth portion 34. This suppresses the generation of stray light caused by the reflection of light passing between the third portion 33 and the fourth portion 34.

[0071] In the optoelectronic device 1, the sum of the widths of the first thin-walled portions 41 in the Y-axis direction is greater than the width L10 of the first portion 31 of the lead 2. With this configuration, when mounted on the back surface as shown in Figure 4(b), the width of the first thin-walled portions 41 located on the mounting surface Sa of the wiring board WB can be sufficiently secured, and as a result, the optoelectronic device 1 can be supported more reliably.

[0072] In the optoelectronic device 1, the width L10 of the first portion 31 in the X-axis direction is greater than 1.5 times the width W10 of the first portion 31 in the Y-axis direction. With this configuration, when mounted on the back surface as shown in Figure 4(b), the width of the first portion 31 located on the mounting surface Sa of the wiring board WB can be sufficiently secured, and as a result, the optoelectronic device 1 can be more reliably supported by the first portion 31 of the lead 2 together with the first thin portion 41.

[0073] In the optoelectronic device 1, a portion 51a of the bottom portion 51 is positioned in the opening 20c of the lead 2. With this configuration, when sealing the optoelectronic element 3 and the processing circuit 4 with the sealing member 7, the portion 51a of the bottom portion 51 (part of the thickened portion 40) is positioned in the opening 20c, allowing the portion 51a of the bottom portion 51 to function as an anchor. This ensures that the optoelectronic element 3 and the processing circuit 4 are securely sealed by the thickened portion 40. Furthermore, by using the opening 20c as an alignment mark, the optoelectronic element 3 and the processing circuit 4 can be easily positioned in predetermined locations on the lead 2 with the opening 20c as a reference. In addition, the optoelectronic device 1 can be easily positioned in predetermined locations on the wiring board WB with the opening 20c as a reference.

[0074] In the optoelectronic semiconductor device 1, the sealing member 7 is made of black resin. With this configuration, the coefficient of linear expansion of the sealing member 7 is smaller compared to when the sealing member 7 is made of, for example, transparent resin. As a result, deformation of the sealing member 7 due to temperature changes can be suppressed, and consequently, the reliability of the optoelectronic semiconductor device 1 can be improved.

[0075] In the optoelectronic device 1, the pair of side surfaces 52b of the thickened portion 40 are inclined with respect to the Z-axis direction such that the distance between the pair of side surfaces 52b in the X-axis direction decreases as you move toward one side in the Z-axis direction. With this configuration, the thickened portion 40 can be easily positioned inside the opening WBa by sliding the pair of side surfaces 52b against the edge of the opening WBa formed in the wiring substrate WB. This makes it easy for the optoelectronic element 3 to receive light on the side of the wiring substrate WB opposite to the mounting surface Sa. Furthermore, in the manufacturing process of the optoelectronic device 1, the mold can be easily removed from the sealing member 7 by sliding the pair of side surfaces 52b against the mold.

[0076] In the optoelectronic device 1, a portion of the optical element 5 corresponds to the opening 52d of the thickened portion 40, and the optical element 5 is sealed together with the optoelectronic semiconductor element 3 by the thickened portion 40. With this configuration, light is incident on the optoelectronic semiconductor element 3 from the outside via the optical element 5, so that light can be suitably incident on the optoelectronic semiconductor element 3.

[0077] In the optoelectronic device 1, the width L1 of the first thin-walled portion 41 and the width L2 of the second thin-walled portion 42 are each greater than the thickness T3 of the thick-walled portion 40. With this configuration, when mounted on the back surface as shown in Figure 4(b), the widths of the first thin-walled portion 41 and the second thin-walled portion 42 located on the mounting surface Sa of the wiring board WB can be sufficiently secured, and as a result, the optoelectronic device 1 can be supported more reliably. [Differentiation]

[0078] The present invention is not limited to the above embodiments. In the above embodiments, the optical semiconductor element 3 is an optical semiconductor element 3, but the optical semiconductor element 3 may be a light-emitting element such as an LD (Laser Diode) or an LED (Light Emitting Diode). In this case, the processing circuit 4 may be an IC chip that outputs an electrical signal to drive the light-emitting element, and the optical element 5 may be, for example, glass (light-transmitting member) coated with an anti-reflective film. In this case, when mounted on the mounting surface Sa of the wiring board WB, light can be emitted on both the mounting surface Sa side and the opposite side of the wiring board WB. Furthermore, since light is emitted from the optical semiconductor element 3 to the outside via the optical element 5, light can be suitably emitted from the optical semiconductor element 3.

[0079] As shown in Figures 8(a) and 8(b), a portion 21c of the back surface 21b of the connecting portion 21 may be located on one side in the Z-axis direction relative to the back surface 31b of the first portion 31 (the lower side in Figures 8(a) and 8(b)). A portion 22c of the back surface 22b of the connecting portion 22 may be located on one side in the Z-axis direction relative to the back surface 32b of the second portion 32. A portion 23c of the back surface 23b of the connecting portion 23 may be located on one side in the Z-axis direction relative to the back surface 33b of the third portion 33. A portion 24c of the back surface 24b of the connecting portion 24 may be located on one side in the Z-axis direction relative to the back surface 34b of the fourth portion 34. In other words, portions 21c to 24c may be recessed toward one side in the Z-axis direction (they may be half-etched). Note that in Figure 8(b), the first thin-walled portion 41, the second thin-walled portion 42, and the bottom portion 51 are not shown.

[0080] In the optoelectronic device 1 shown in Figures 8(a) and 8(b), some of the 21c to 24c portions may be covered by the thickened portion 40 (bottom portion 51). In other words, some of the 21c to 24c portions do not need to be exposed on the other side in the Z-axis direction (the upper side in Figures 8(a) and 8(b)). In this case, the generation of noise that may occur due to the exposure of some of the 21c to 24c portions (for example, noise caused by some of the 21c to 24c portions contacting the wiring board WB) can be suppressed. Furthermore, the entirety of each of the back surfaces 21b to 24b may be concave toward one side in the Z-axis direction.

[0081] In the above embodiment, at least one part of one of the two faces (front and back) of the lead 2 facing each other in the Z-axis direction may be recessed toward one or the other side in the Z-axis direction and may be covered by the sealing member 7. Here, the front surface of the lead 2 includes the front surface 20a of the placement portion 20, the front surfaces 21a to 24a of the connection portions 21 to 24, the front surface 31a of the first portion 31, the front surface 32a of the second portion 32, the front surface 33a of the third portion 33, and the front surface 34a of the fourth portion 34. The back surface of the lead 2 includes the back surface 20b of the placement portion 20, the back surfaces 21b to 24b of the connection portions 21 to 24, the back surface 31b of the first portion 31, the back surface 32b of the second portion 32, the back surface 33b of the third portion 33, and the back surface 34b of the fourth portion 34.

[0082] For example, a portion of each of the surfaces 31a to 34a of the first portion 31, second portion 32, third portion 33, and fourth portion 34 of lead 2 may be recessed toward the other side in the Z-axis direction (the lower side in Figure 1) relative to the other portion of each of the surfaces 31a to 34a, and may be covered by the first thin-walled portion 41 or the second thin-walled portion 42. In this case, a portion of each of the surfaces 31a to 34a may not be exposed on one side in the Z-axis direction. The percentage of the area of ​​each of the surfaces 31a to 34a that is exposed on one side in the Z-axis direction was 100% in the above embodiment, but may be 50% or more, or 80% or more. A portion of each of the back surfaces 31b to 34b of the first portion 31, second portion 32, third portion 33, and fourth portion 34 of lead 2 may be recessed toward one side in the Z-axis direction (upper side in Figure 1, see Figure 3) relative to the other portion of the back surface 31b to 34b, and may be covered by the first thin-walled portion 41 or the second thin-walled portion 42. In this case, a portion of each of the back surfaces 31b to 34b may not be exposed to the other side in the Z-axis direction. The ratio of the area of ​​the portion of each of the back surfaces 31b to 34b that is exposed to the other side in the Z-axis direction was 100% in the above embodiment, but may be 50% or more, or 80% or more. A portion of the back surface 20b of the arrangement portion 20 may be recessed toward one side in the Z-axis direction (upper side in Figure 1, see Figure 3) relative to the other portion of the back surface 20b, and may be covered by the thick-walled portion 40. These configurations make it possible to suppress the generation of noise that may occur due to the exposure of a portion of at least one of the two surfaces of lead 2 (for example, noise caused by the portion in contact with the wiring board WB).

[0083] In the above embodiment, the lead 2 had four terminals: a first portion 31, a second portion 32, a third portion 33, and a fourth portion 34. However, as shown in Figure 9, the lead 2 may have two terminals: a first portion 31 and a second portion 32. In this case, the processing circuit 4 does not have to be located on the lead 2. The first portion 31 may be in contact with the first thin-walled portion 41, or it may extend along the first thin-walled portion 41 to one side in the X-axis direction. The second portion 32 may be in contact with the second thin-walled portion 42, or it may extend along the second thin-walled portion 42 to the other side in the X-axis direction. The first portion 31 may function as either a signal output terminal or a ground terminal, and the second portion 32 may function as either a signal output terminal or a ground terminal.

[0084] If lead 2 has two terminals, as shown in Figure 10, each of the first portion 31 and the second portion 32 may be in contact with the second thin-walled portion 42, or may extend along the second thin-walled portion 42 to the other side in the X-axis direction.

[0085] The number of terminals on lead 2 is not limited; the number of terminals extending along the first thin-walled portion 41 to one side in the X-axis direction may be 3 or more, and the number of terminals extending along the second thin-walled portion 42 to the other side in the X-axis direction may be 3 or more.

[0086] In the above embodiment, the first part 31, the second part 32, the third part 33, and the fourth part 34 each function as a power supply terminal, a signal output terminal, a ground terminal, and a reset terminal, respectively. However, if the processing circuit 4 is not located on the lead 2, two of the terminals of the first part 31, the second part 32, the third part 33, and the fourth part 34 may function as a signal output terminal and a ground terminal, while the other two terminals are dummy terminals.

[0087] In the above embodiment, the first portion 61 of the first thin-walled portion 41 extends along the Y-axis direction across the entire region R1 between the first portion 31 and the second portion 32 of the lead 2. However, the entire first thin-walled portion 41 may extend along the Y-axis direction across the entire region R1. In this case, the first thin-walled portion 41 may consist of a single part. Similarly, the entire second thin-walled portion 42 may extend along the Y-axis direction across the entire region R2. In this case, the second thin-walled portion 42 may consist of a single part.

[0088] In the above embodiment, one end of the wire 6 was connected to the back surfaces 21b to 24b of the connection portions 21 to 24, and the other end of the wire 6 was connected to the processing circuit 4. However, the other end of the wire 6 may be connected to the optical semiconductor element 3. In this case, the processing circuit 4 does not have to be located on the lead 2.

[0089] In the above embodiment, the first portion 61 of the first thin-walled portion 41 extends along the Y-axis direction across the entire region R1 between the first portion 31 and the second portion 32 of the lead 2. However, the first portion 61 does not have to extend across the entire region R1. For example, the first portion 61 of the first thin-walled portion 41 may extend along the Y-axis direction from the first portion 31 to the second portion 32 of the lead 2, with the respective tips of the first portion 31 and the second portion 32 protruding from the first portion 61 to one side in the X-axis direction (the right side in Figure 3). Similarly, the first portion 71 of the second thin-walled portion 42 may extend along the Y-axis direction from the third portion 33 to the fourth portion 34 of the lead 2, with the respective tips of the third portion 33 and the fourth portion 34 protruding from the first portion 71 to the other side in the X-axis direction (the left side in Figure 3).

[0090] In the above embodiment, the optical element 5 is sealed together with the optical semiconductor element 3 by the thickened portion 40, but the optical element 5 does not have to be sealed by the thickened portion 40. The optical element 5 may be placed in the opening 52d, or for example, it may be fitted into the opening 52d. [Explanation of Symbols]

[0091] 1...Optical semiconductor device, 2...Lead, 3...Optical semiconductor element, 4...Processing circuit, 5...Optical element, 6...Wire, 7...Sealing member, 20c, 52d...Opening, 21...Connection part, 21a...Front surface (5th surface), 21b...Back surface (5th back surface), 31...First part, 31a...Front surface (1st surface), 31b...Back surface (1st back surface), 32...Second part, 32a...Front surface (2nd surface), 32b...Back surface (2nd back surface), 33...Third part, 33a...Front surface (3rd surface), 33b...Back surface (3rd back surface), 34...Fourth part, 34a...Front surface (4th surface), 34b...Back surface (4th back surface), 40...Thick part, 41...First thin part, 42...Second thin part, 52b...Side surface, 61, 71...First part, R1, R2...Region.

Claims

1. Lead and, An optical semiconductor element positioned on one side in the first direction relative to the lead, The optical semiconductor element is sealed so as to define an opening corresponding to at least a part of the optical semiconductor element, and the sealing member blocks light emitted by the optical semiconductor element or light received by the optical semiconductor element, The sealing member is A thick portion having the aforementioned opening and sealing the optical semiconductor element, A first thin-walled portion is formed integrally with the thick-walled portion and is located on one side of the thick-walled portion in a second direction intersecting the first direction, It includes a second thin portion which is formed integrally with the thick portion and is positioned on the other side in the second direction relative to the thick portion, The thickness of the first thin-walled portion and the second thin-walled portion in the first direction is smaller than the thickness of the thick-walled portion in the first direction. The lead includes a first portion that protrudes from the thickened portion when viewed from one side in the first direction, The first portion is in contact with the first thin-walled portion and extends along the first thin-walled portion to one side in the second direction, The first portion has a first surface that is exposed to at least a portion of one side in the first direction and a first back surface that is exposed to at least a portion of the other side in the first direction. An optoelectronic device wherein the width of the first thin portion in the second direction is greater than the width of the first portion in the third direction that intersects both the first and second directions.

2. The optoelectronic device according to claim 1, wherein the thickness of the first thin portion in the first direction is the same as the thickness of the first portion in the first direction.

3. The lead includes a second portion that protrudes from the thickened portion when viewed from one side in the first direction, The second portion is in contact with the first thin-walled portion and extends along the first thin-walled portion to one side in the second direction, The second portion has a second surface that is exposed to at least a portion of one side in the first direction and a second back surface that is exposed to at least a portion of the other side in the first direction. The optoelectronic device according to claim 1, wherein at least a portion of the first thin portion extends along the third direction from the first portion to the second portion.

4. The lead includes a third portion that protrudes from the thickened portion when viewed from one side in the first direction, The third portion is in contact with the second thin-walled portion and extends along the second thin-walled portion to the other side in the second direction, The third portion has a third surface that is exposed to at least a portion of one side in the first direction and a third back surface that is exposed to at least a portion of the other side in the first direction. The optical semiconductor device according to claim 1, wherein the width of the second thin portion in the second direction is greater than the width of the third portion in the third direction.

5. The lead includes a fourth portion that protrudes from the thickened portion when viewed from one side in the first direction, The fourth portion is in contact with the second thin-walled portion and extends along the second thin-walled portion to the other side in the second direction, The fourth portion has a fourth surface that is exposed to at least a portion of one side in the first direction and a fourth back surface that is exposed to at least a portion of the other side in the first direction. The optoelectronic device according to claim 4, wherein at least a portion of the second thin portion extends along the third direction from the third portion to the fourth portion.

6. The optical semiconductor device according to claim 1, wherein the sum of the widths of the first thin-walled portions in the third direction is greater than the width of the first portion in the second direction.

7. The optical semiconductor device according to claim 1, wherein the width of the first portion in the second direction is greater than 1.5 times the width of the first portion in the third direction.

8. The optoelectronic semiconductor device according to claim 1, wherein a portion of at least one of the two faces of the leads facing each other in the first direction is recessed toward the one or the other side in the first direction relative to the other portion of the at least one face, and is covered by the sealing member.

9. Equipped with additional wires, The lead further includes a connecting portion connected to the first portion, The connecting portion has a fifth surface on one side in the first direction and a fifth back surface on the other side in the first direction. One end of the wire is connected to the fifth surface, The fifth surface is covered by the thickened portion together with the wire, The optical semiconductor device according to claim 8, wherein at least a portion of the fifth back surface is located on one side in the first direction relative to the first back surface and is covered by the thickened portion.

10. The processing circuit is further provided on one side in the first direction with respect to the lead, The processing circuit is sealed together with the optical semiconductor element by the thickened portion. The lead has an opening that is located between the optical semiconductor element and the processing circuit when viewed from the first direction. The optical semiconductor device according to claim 1, wherein a part of the thickened portion is disposed in the opening of the lead.

11. The optoelectronic device according to claim 1, wherein the sealing member is formed of black resin.

12. The thickened portion has a pair of sides that face each other in the second direction, The first thin-walled portion and the second thin-walled portion are formed on each of the pair of side surfaces, The optical semiconductor device according to claim 1, wherein the pair of sides are inclined with respect to the first direction such that the distance between the pair of sides in the second direction decreases as you move toward one side in the first direction.

13. The optical element further comprises an optical element disposed on the aforementioned optical semiconductor element, The optical semiconductor device according to claim 1, wherein at least a portion of the optical element corresponds to the opening of the thickened portion.

14. The optoelectronic device according to claim 1, wherein the widths of the first thin portion and the second thin portion in the second direction are greater than the thickness of the thick portion in the first direction.