Imprinting apparatus, imprinting method, article manufacturing method, and program

Abstract

This technology offers advantages for performing imprint printing on partial fields of a circuit board. [Solution] The imprint apparatus forms a pattern by bringing the imprint material on the partial field of the substrate into contact with the pattern area of ​​the mold and curing the imprint material. The imprint apparatus includes an adjustment unit for adjusting the relative position between the substrate and the mold, and a control unit for bringing the imprint material and the pattern area into contact with the pattern area such that the partial field has an offset in the direction inward of the substrate relative to the pattern area, and then controlling the adjustment unit so that alignment between the pattern area and the partial field is performed.

Description

Technical Field

[0001] The present invention relates to an imprint apparatus, an imprint method, an article manufacturing method, and a program.

Background Art

[0002] An imprint apparatus performs an imprint process of forming a pattern on a substrate by bringing an imprint material supplied onto a shot region of the substrate into contact with a pattern region of a mold and curing the imprint material. As described in Patent Document 1, the types of shot regions include a full field having a rectangular shape and a partial field whose shape is defined by the outer periphery of the substrate.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] When forming a pattern by an imprint process in a partial field of a substrate, there is a possibility that the imprint material or its cured product that has spread outside the partial field remains in the pattern region of the mold after the imprint process. If the imprint material or its cured product remains in the pattern region, it may induce the occurrence of defects when forming a pattern in the next shot region.

[0005] An object of the present invention is to provide an advantageous technique for performing an imprint process on a partial field of a substrate.

Means for Solving the Problems

[0006] One aspect of the present invention relates to an imprint apparatus for forming a pattern by bringing an imprint material on a partial field of a substrate into contact with a pattern area of ​​a mold and curing the imprint material, the imprint apparatus comprising: an adjustment unit for adjusting the relative position between the substrate and the mold; and a control unit for controlling the adjustment unit so that the imprint material and the pattern area are brought into contact with the pattern area such that the partial field has an offset in the direction inward of the substrate with respect to the pattern area, and then alignment between the pattern area and the partial field is performed. [Effects of the Invention]

[0007] The present invention provides an advantageous technique for performing imprint processing on partial fields of a substrate. [Brief explanation of the drawing]

[0008] [Figure 1] A schematic diagram showing the configuration of an imprint device according to one embodiment. [Figure 2] A flowchart illustrating the operation of an imprint device according to one embodiment. [Figure 3] A diagram illustrating shot layout on a circuit board. [Figure 4] A diagram illustrating the imprinting process for partial fields. [Figure 5] A diagram illustrating the imprinting process for partial fields. [Figure 6] A diagram illustrating the imprinting process for partial fields. [Figure 7] A diagram illustrating the imprinting process for partial fields. [Figure 8] A diagram illustrating a method for manufacturing goods. [Modes for carrying out the invention]

[0009] The embodiments will be described in detail below with reference to the attached drawings. Note that the following embodiments do not limit the invention as defined in the claims. While the embodiments describe multiple features, not all of these features are essential to the invention, and the features may be combined in any way. Furthermore, in the attached drawings, identical or similar configurations are given the same reference numerals, and redundant descriptions are omitted.

[0010] An imprint apparatus forms a pattern on a substrate consisting of a cured imprint material by imprint processing. The imprint processing may include a contact step of bringing the pattern area of ​​the mold into contact with the imprint material on the substrate, a curing step of curing the imprint material, and a separation step of separating the mold from the cured imprint material. Alternatively, the imprint processing may also include a placement step of placing the imprint material on the substrate. The imprint processing forms a pattern on the substrate consisting of a cured imprint material. The substrate has multiple shot areas, and imprint processing may be performed on each individual shot area. The multiple shot areas of the substrate may include full fields and partial fields.

[0011] Figure 1 schematically shows the configuration of the imprint apparatus 1. In this specification and drawings, directions are indicated according to an XYZ coordinate system in which the plane on which the substrate 10 is placed is the XY plane and the direction perpendicular to it is the Z axis. The imprint apparatus 1 brings the pattern area 8a of the mold 8 into contact with the imprint material 14 supplied onto the substrate 10 and applies curing energy 9 to the imprint material 14 to form a cured pattern in which the pattern of the pattern area 8a is transferred. The mold 8 may also be called a mold, template, or master plate. The imprint apparatus 1 in Figure 1 may be used to manufacture articles such as semiconductor devices.

[0012] The imprint apparatus 1 may include a mold drive mechanism MD (imprint head) for driving a mold 8, a substrate drive mechanism SD for driving a substrate 10, and a dispenser 5 for placing imprint material 14 on the substrate 10. The imprint apparatus 1 may also include a curing unit 2 for irradiating curing energy 9 (e.g., light energy) to cure the imprint material 14, and an imaging unit 6 for capturing an image having features indicating the contact state between the mold 8 and the imprint material 14 using light 35. The imprint apparatus 1 may also include a detector (alignment scope) 12 for detecting the relative position between the shot area of ​​the substrate 10 and the pattern area 8a of the mold 8. The imprint apparatus 1 may also include an off-axis scope 21 for detecting the arrangement of multiple shot areas on the substrate 10. The imprint apparatus 1 includes a control unit 7 for controlling multiple components of the imprint apparatus 1 and controlling the operation of the imprint apparatus 1. The control unit 7 may consist of, for example, a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), a general-purpose or dedicated computer with a program installed, or a combination of all or part of these. The program causes the imprint device 1 to execute the imprint method.

[0013] The substrate drive mechanism SD may include a substrate chuck 16 for holding the substrate 10, a substrate stage 4 for holding the substrate chuck 16, and an actuator 17 for driving the substrate stage 4. The actuator 17 may drive the substrate stage 4 in relation to at least three axes, X, Y, and ωz, preferably six axes, X, Y, Z, ωx, ωy, and ωz. ωx, ωy, and ωz are rotations around the X, Y, and Z axes, respectively. The substrate stage 4 may have a plurality of reference mirrors 18 on its side corresponding to each of the X, Y, Z, ωx, ωy, and ωz axes. The imprint apparatus 1 includes a plurality of laser interferometers 19 (measuring instruments) that measure the position of the substrate stage 4 by irradiating each of these reference mirrors 18 with a beam. The control unit 7 may control the positioning operation of the substrate 10 (substrate stage 4) based on the output of the laser interferometers 19. The imprint apparatus 1 may measure the position and orientation of the substrate stage 4 using encoders instead of the reference mirrors 18 and laser interferometers 19.

[0014] The mold drive mechanism MD may include a mold chuck 11 that holds the mold 8, and an actuator 38 that drives the mold chuck 11. The actuator 38 is configured to drive the mold chuck 11 (and the mold 8) in at least three axes, Z, ωx, and ωy, preferably in six axes, X, Y, Z, ωx, ωy, and ωz. The mold drive mechanism MD may also include a deformation mechanism that deforms the pattern area of ​​the mold 8. The substrate drive mechanism SD and the mold drive mechanism MD may constitute an adjustment unit RD that adjusts the relative position between the substrate 10 and the mold 8.

[0015] In the imprinting device 1, an inverted pattern of the concavo-convex pattern formed on the substrate 10 is formed in the pattern region 8a of the mold 8. In the following description, the case where the pattern region 8a is provided in the mesa portion of the mold 8 will be described, but the mold 8 may not have a mesa portion. The imprinting device 1 forms a pattern by bringing the imprinting material 14 above the shot region (full field or partial field) of the substrate 10 into contact with the pattern region 8a of the mold 8 and curing the imprinting material 14. Thereafter, the imprinting device 1 separates the pattern region 8a of the mold 8 from the cured product of the imprinting material 14. The operation of bringing the pattern region 8a of the mold 8 into contact with the imprinting material 14 above the shot region of the substrate 10 and the operation of separating the pattern region 8a of the mold 8 from the cured product of the imprinting material 14 can be performed by driving the mold 8 in the Z-axis direction by the mold driving mechanism MD. However, these operations may be performed by driving the substrate 10 by the substrate driving mechanism SD, or may be performed by both the mold driving mechanism MD and the substrate driving mechanism SD.

[0016] The mold driving mechanism MD may include a light transmissive member 41 (for example, a quartz plate) that forms a sealed space 13 on the back side of the mold 8. By adjusting the pressure in the sealed space 13, the mold 8 (pattern region 8a) can be deformed into a convex shape downward when the imprinting material 14 is brought into contact with the mold 8 and when the mold 8 is separated from the cured product of the imprinting material 14.

[0017] The detector 12 can illuminate the mark formed on the mold 8 and the mark formed on the substrate 10 with the detection light 60 and capture an image formed by these marks. The imprinting device 1 can detect the relative position between the mold 8 (pattern region 8a) and the substrate 10 (shot region) based on the output of the detector 12. The imprinting device 1 can align the mold 8 (pattern region 8a) and the substrate 10 (shot region) by operating the adjustment unit RD based on this relative position.

[0018] The imaging unit 6 is configured to include the pattern area 8a of the mold 8 held by the mold chuck 11 within the field of view, and can capture at least one of the pattern area 8a of the mold 8 and the shot area of the substrate 10 to obtain an image. The imprint apparatus 1 can observe, using the imaging unit 6, the state of the imprint material 14 on the shot area of the substrate 10 and the contact state between the imprint material 14 on the shot area of the substrate 10 and the pattern area 8a of the mold 8.

[0019] The imprint material 14 is a curable composition that cures when subjected to curing energy (sometimes also referred to as an uncured resin). As the curing energy, electromagnetic waves or the like can be used. The electromagnetic waves are, for example, light such as infrared rays, visible light, and ultraviolet rays selected from the range of wavelengths of 10 nm or more and 1 mm or less. The curable composition is a composition that cures by irradiation with light or by heating. Among these, the photocurable composition that cures by light contains at least a polymerizable compound and a photoinitiator, and may contain a non-polymerizable compound or a solvent as necessary. The non-polymerizable compound is at least one selected from the group consisting of a sensitizer, a hydrogen donor, an internal mold release agent, a surfactant, an antioxidant, a polymer component, and the like. The imprint material 14 can be disposed on the substrate 10 in a droplet shape or in an island shape or a film shape formed by connecting a plurality of droplets by the dispenser 5. The viscosity of the imprint material 14 (viscosity at 25°C) is, for example, 1 mPa·s or more and 100 mPa·s or less. The imprint material 14 can include, for example, an inkjet-type liquid ejection head.

[0020] The substrate 10 can include, for example, a plate-like member made of glass, ceramics, metal, semiconductor, or resin. The plate member is, for example, a silicon wafer, a compound semiconductor wafer, or quartz glass. The substrate 10 can have one or more layers on the plate-like member.

[0021] Figure 2 illustrates the operation of the imprint apparatus 1. In step S201, the control unit 7 controls a transport mechanism (not shown) so that the substrate 10 is transported onto the substrate chuck 16. In step S202, the control unit 7 measures the arrangement of multiple shot areas on the substrate 10 by detecting the positions of marks on the substrate 10 using the detector 12 and / or off-axis scope 21. In step S203, the control unit 7 determines the shot area to be processed next. In step S204, the control unit 7 controls the substrate drive mechanism SD and dispenser 5 so that the imprint material 14 is placed on the shot area determined in step S203. In step S205, the control unit 7 determines whether the shot area to be processed next is a partial field, and if it is, proceeds to step S206. On the other hand, if the shot area to be processed next is a full field, the control unit 7 proceeds to step S215.

[0022] In step S206, the control unit 7 determines the relative drive amount between the substrate 10 and the mold 8 necessary to position the shot area to be processed next, i.e., the partial field, below the pattern area 8a of the mold 8. This relative drive amount is the relative drive amount between the substrate 10 and the mold 8 necessary to keep the alignment error between the mold 8 (pattern area 8a) and the shot area (partial field) within an acceptable range. In step S207, the control unit 7 determines a corrected drive amount by correcting the drive amount determined in step S206 based on a predetermined offset amount. This offset amount is determined so that the imprint material 14 and the pattern area 8a can be brought into contact with the pattern area 8a of the mold 8 with the partial field having an offset in the inward direction relative to the pattern area 8a of the mold 8.

[0023] In step S208, the control unit 7 performs an initial alignment by driving the substrate 10 and the mold 8 relative to each other based on the correction drive amount determined in step S207. In other words, in step S208, the control unit 7 performs an initial alignment based on the correction drive amount to position the shot area (partial field) to be processed next below the pattern area 8a of the mold 8. In this state, the shot area (partial field) to be processed next has an offset in the inward direction relative to the pattern area 8a of the mold 8.

[0024] In step S215, the control unit 7 determines the relative drive amount between the substrate 10 and the mold 8 necessary to position the next shot area to be processed, i.e., the full field, below the pattern area 8a of the mold 8. This relative drive amount is the relative drive amount between the substrate 10 and the mold 8 necessary to keep the alignment error between the mold 8 (pattern area 8a) and the shot area (full field) within an acceptable range. In step S216, the control unit 7 performs an initial alignment by driving the substrate 10 and the mold 8 relative to the drive amount determined in step S215. In other words, in step S216, the control unit 7 performs an initial alignment to position the next shot area (full field) to be processed below the pattern area 8a of the mold 8, based on the drive amount determined in step S215. In this state, the next shot area (full field) to be processed does not have an intentional offset relative to the pattern area 8a of the mold 8.

[0025] Following step S208 or step S216, in step S209, the control unit 7 controls the adjustment mechanism RD so that the pattern area 8a of the mold 8 contacts the imprint material 14 on the shot area. In step S210, the control unit 7 controls the adjustment mechanism RD based on the output of the detector 12 so that the alignment error between the shot area and the pattern area 8a is reduced, that is, so that the shot area and the pattern area 8a are aligned. The reduction of the alignment error may include deformation of the shot area by the deformation mechanism.

[0026] In step S211, the control unit 7 controls the curing unit 2 so that curing energy 9 is irradiated onto the imprint material 14 between the shot area and the pattern area 8a. This cures the imprint material 14 and forms a pattern consisting of the cured imprint material 14. In step S212, the control unit 7 controls the adjustment mechanism RD so that the mold 8 (pattern area 8a) is separated from the cured imprint material 14 on the shot area. In step S213, the control unit 7 determines whether all the shot areas of the substrate 10 to be processed have been processed. If it determines that all the shot areas of the substrate 10 to be processed have been processed, the control unit 7 controls a transport mechanism (not shown) in step S214 so that the substrate 10 is transported from the substrate chuck 16. On the other hand, if the control unit 7 determines that there are unprocessed shot areas, it proceeds to step S203, in which it determines the next shot area to be processed.

[0027] Figure 3 illustrates a shot layout on substrate 10. The shot layout is an arrangement of multiple shot regions SR on substrate 10. The multiple shot regions SR may include multiple full fields 100 and multiple partial fields 101. The full fields 100 may have a rectangular shape. In other words, the full fields 100 may have the same shape as the pattern region 8a of type 8. The shape of the partial fields 101 is defined by the outer perimeter of substrate 10. In other words, part of the shape of the partial fields 101 is defined by an arc along the outer perimeter of substrate 10. In Figure 3, the partial fields 101 are shot regions with diagonal lines.

[0028] Figure 4(a) schematically shows the state of the partial field 101 of the substrate 10 and the pattern area 8a of the mold 8 immediately after the completion of process S208, i.e., immediately after the completion of initial alignment. Imprint material 14 is placed on the partial field 101 of the substrate 10. The shortest distance between the imprint material 14 and the edge 110 of the substrate 10 can be determined depending on the amount of imprint material 14 supplied to the partial field, the distance between the substrate 10 and the pattern area 8a of the mold 8, the viscosity of the imprint material 14, the force with which the mold 8 is pressed against the imprint material 14, etc. The edge 110 of the substrate 10 refers to the outermost periphery of the substrate 10, and the outermost periphery of the effective area of ​​the substrate 10 may be located inside the edge 110. The effective area of ​​the substrate 10 refers to the area of ​​the substrate 10 in which pattern formation is permitted. The area between the outermost periphery of the effective area of ​​the substrate 10 and the edge 110 of the substrate 10 may be the area where EBR (Edge Bead Removal) processing is performed. If the imprint material 14 extends beyond the effective area of ​​the substrate 10, the imprint material 14 may contaminate the substrate transport mechanism and the substrate chuck 16, etc.

[0029] Figure 4(b) schematically shows the state of the partial field 101 and the pattern region 8a of the mold 8 immediately after the completion of process S209, that is, immediately after the pattern region 8a of the mold 8 is brought into contact with the imprint material 14 on the partial field 101. When the pattern region 8a of the mold 8 is brought into contact with the imprint material 14 on the partial field 101, the imprint material 14 fills the space between the partial field 101 and the pattern region 8a, and a film of the imprint material 14 is formed.

[0030] Figure 4(c) schematically shows the state of the partial field 101 and the pattern region 8a of the mold 8 immediately after the completion of processes S211 (curing) and S212 (separation). If the relative position between the substrate 10 and the mold 8 does not change after the completion of filling the space between the partial field 101 and the pattern region 8a with the imprint material 14, the relative position between the edge of the imprint material 14 and the pattern region 8a of the mold 8 will not change.

[0031] Figures 5(a), (b), and (c) schematically show initial alignment and undesirable alignment examples. The state in which the mark 10b provided on the partial field 101 of the substrate 10 and the mark 8b provided on the pattern area 8a of the mold 8 overlap represents a state where the alignment error between the partial field 101 and the pattern area 8a is 0. Figure 5(a) schematically shows the state in which the imprint material 14 and the pattern area 8a are in contact with the pattern area 8a of the mold 8 with the partial field 101 having an offset toward the outside of the substrate 10. Figure 5(b) schematically shows the state in which alignment has been performed so that the marks 8a and 8b overlap, that is, the state in which the pattern area 8a of the mold 8 has been moved toward the outside of the substrate 10 with respect to the partial field 101 (substrate 10). As a result, the area in contact between the pattern area 8a and the imprint material 14 expands outward in the pattern area 8a, and an overhang portion 120 may be generated where the imprint material 14 extends outward from the partial field 101. The overhang portion 120 may be composed of the imprint material that extends into the area of ​​the pattern area 8a that does not face the partial field 101.

[0032] Figure 5(c) schematically shows the state after the mold 8 has been separated from the cured imprint material 14 on the partial field 101 (substrate 10) after the imprint material 14 has been cured in the state shown in Figure 5(b). In the state shown in Figure 5(b), the overflow portion 120 is in contact with the pattern area 8a of the mold 8, but not with the partial field 101 of the substrate 10. If the imprint material 14 is cured in this state and the mold 8 is separated from the cured imprint material 14 on the partial field 101 (substrate 10), the imprint material 14 or its cured material may remain in the pattern area 8a of the mold 8. If processing is performed on other shot areas while the imprint material 14 or its cured material remains in the pattern area 8a of the mold 8, a pattern with defects may be formed on the other shot areas.

[0033] Figures 5(d), (e), and (f) schematically show the initial alignment and alignment according to this embodiment. The state in which the mark 10b provided on the partial field 101 of the substrate 10 and the mark 8b provided on the pattern area 8a of the mold 8 overlap represents a state in which the alignment error between the partial field 101 and the pattern area 8a is 0. Figure 5(d) schematically shows the state in which the imprint material 14 and the pattern area 8a are in contact with the pattern area 8a of the mold 8 with the partial field 101 having an offset in the inward direction relative to the pattern area 8a of the mold 8. Figure 5(e) schematically shows the state in which alignment has been performed so that the marks 8a and 8b overlap, that is, the state in which the pattern area 8a of the mold 8 has been moved in the inward direction relative to the partial field 101 (substrate 10). As a result, the contact area between the pattern area 8a and the imprint material 14 shrinks inward from the pattern area 8a, becoming smaller than the contact area between the partial field 101 and the imprint material 14. In this case, no overhang portion 120 of the imprint material 14 extending outward from the partial field 101 occurs. In other words, according to this embodiment, no overhang portion 120 of the imprint material extending into the area of ​​the pattern area 8a that does not face the partial field 101 occurs.

[0034] Figure 5(f) schematically shows the state after the mold 8 has been separated from the cured imprint material 14 on the partial field 101 (substrate 10) after the imprint material 14 has been cured in the state shown in Figure 5(e). In the state shown in Figure 5(e), no overflow portion 120 has been formed. Therefore, even if the imprint material 14 is cured in this state and the mold 8 is separated from the cured imprint material 14 on the partial field 101 (substrate 10), no imprint material 14 or its cured material remains in the pattern region 8a of the mold 8.

[0035] The process of this embodiment will be further explained with reference to Figure 6. Figure 6(a) is a top view showing an example of a partial field 101 of the substrate 10. Figure 6(b) is a schematic top view showing that the imprint material 14 and the pattern region 8a of the mold 8 are in contact with the partial field 101 having an offset in the inward direction relative to the pattern region 8a of the mold 8. Figure 6(b2) shows a cross-sectional view at line segment AB of Figure 6(b). Figure 6(c) is a schematic top view showing the alignment of the partial field 101 and the pattern region 8a after the pattern region 8a of the mold 8 has been brought into contact with the imprint material 14 on the partial field 101. Figure 6(c2) shows a cross-sectional view at line segment AB of Figure 6(c).

[0036] As schematically shown in Figures 6(b) and (b2), during the contact process, the imprint material 14 and the pattern area 8a of the mold 8 come into contact with each other, with the partial field 101 having an offset in the inward direction relative to the pattern area 8a of the mold 8. Subsequently, as schematically shown in Figures 6(c) and (c2), alignment (i.e., an operation to reduce alignment errors) is performed between the pattern area 8 of the mold 8 and the partial field 101 (substrate 10). The alignment between the pattern area 8 and the partial field 101 is performed so that the pattern area 8a of the mold 8 moves inward relative to the partial field 101 (substrate 10). In other words, the alignment between the pattern area 8a and the partial field 101 is performed so that the edge 150 of the contact area between the pattern area 8a of the mold 8 and the imprint material 14 moves inward relative to the edge 110 of the substrate 10.

[0037] The control unit 7 reduces the alignment error between the pattern area 8a and the partial field 101 during alignment. Alternatively, the control unit 7 does not increase the contact area between the pattern area 8a and the imprint material 14 during alignment. Alternatively, the control unit 7 reduces the contact area between the pattern area 8a and the imprint material 14 during alignment.

[0038] Here, with reference to Figure 7, the method for determining the initial offset used in process S207 will be illustrated. Let MC(X1,Y1) be the coordinates of the center MC of the pattern region 8a of type 8. Also, let MC'(X2,Y2) be the coordinates of the virtual center MC' of the pattern region 8a (shown as 8a') when the pattern region 8a is superimposed on the partial field 101 without alignment error.

[0039] In the first determination method, the control unit 7 determines the offset OS of the partial field 101 relative to the pattern region 8a in the direction from the center MC(X1,Y1) of the pattern region 8a toward the virtual center MC'(X2,Y2).

[0040] In the second determination method, the control unit 7 determines the direction D from the center MC(X1,Y1) of the pattern region 8a toward the center SC of the substrate 10. SC Next, the offset OS of the partial field 101 relative to the pattern region 8a is determined.

[0041] In the third determination method, the control unit 7 determines the direction D from the centroid CG of the partial field 101 toward the center SC of the substrate 10. SC Next, the offset OS of the partial field 101 relative to the pattern region 8a is determined.

[0042] In the fourth determination method, the control unit 7 determines the offset OS of the partial field 101 with respect to the pattern region 8a in the direction toward the center SC of the substrate 10 from an arbitrary position of the arc ARC that constitutes part of the shape of the partial field 101.

[0043] In the fifth determination method, the control unit 7 determines the offset OS of the partial field 101 with respect to the pattern region 8a in the direction from the center of the arc ARC (the position that divides the arc ARC in two) which constitutes a part of the shape of the partial field 101 toward the center SC of the substrate 10.

[0044] The amount of offset OS, OSM, can be expressed, for example, by the following equation:

[0045] OSM = ((X2 - X1)) 2 +(Y2-Y1) 2 ) 1 / 2 The maximum value of the offset OS amount OSM is set to be less than or equal to the maximum value at which the detector 12 can detect the alignment error between the pattern region 8a and the partial field 101. For example, the maximum value of the offset OS amount OSM may be 2 micrometers or less, and preferably 1 micrometer or less. The minimum value of the offset OS amount OSM can be determined to ensure that, during alignment after the contact process, the pattern region 8a does not move outward relative to the partial field 101. The minimum value of the offset OS amount OSM may be 50 nanometers or more, and preferably 100 nanometers or more.

[0046] In the alignment after the contact process, it is preferable that the pattern region 8a does not move outward relative to the partial field 101. However, if Δ1 > Δ2 is satisfied, a reasonable effect can be obtained in preventing the imprint material 14 or its cured product from remaining in the pattern region 8a. Here, Δ1 is the amount by which the pattern region 8a initially moves inward relative to the partial field 101 in the alignment after the contact process. Δ2 is the amount by which the pattern region 8a moves outward relative to the partial field 101 after the movement of Δ1. In other words, it is sufficient that the edge 140 of the contact area between the pattern region 8a and the imprint material 14 does not expand in the pattern region 8a after the contact process.

[0047] The patterns of cured materials formed using an imprint apparatus are used permanently on at least a portion of various articles, or temporarily during the manufacturing of various articles. Articles include electrical circuit elements, optical elements, MEMS, recording elements, sensors, or molds. Examples of electrical circuit elements include volatile or non-volatile semiconductor memories such as DRAM, SRAM, flash memory, and MRAM, as well as semiconductor elements such as LSI, CCD, image sensors, and FPGAs. Examples of molds include molds for imprinting.

[0048] The pattern of the cured material is either used as is as a component of at least a part of the above-mentioned article, or temporarily used as a resist mask. After etching or ion implantation is performed during the substrate processing process, the resist mask is removed.

[0049] Next, an article manufacturing method for manufacturing an article using the imprinting apparatus 1 or the imprinting method described above will be explained. Roughly speaking, the article manufacturing method may include a pattern forming step of forming a pattern on a substrate using the imprinting apparatus 1 or the imprinting method described above, and a processing step of processing the substrate that has undergone the pattern forming step to obtain an article.

[0050] As shown in Figure 8(a), a substrate 1z such as a silicon wafer is prepared, on which a workpiece material 2z such as an insulator is formed on its surface. Subsequently, an imprint material 3z is applied to the surface of the workpiece material 2z by an inkjet method or the like. This shows how multiple droplet-shaped imprint material 3z are applied to the substrate.

[0051] As shown in Figure 8(b), the mold 4z for imprinting is positioned opposite the imprint material 3z on the substrate, with the side where the uneven pattern is formed facing it. As shown in Figure 8(c), the substrate 1z to which the imprint material 3z is applied is brought into contact with the mold 4z, and pressure is applied. The imprint material 3z fills the gap between the mold 4z and the workpiece 2z. In this state, when light is irradiated through the mold 4z as curing energy, the imprint material 3z hardens.

[0052] As shown in Figure 8(d), after the imprint material 3z has hardened, when the mold 4z and the substrate 1z are separated, a pattern of the hardened imprint material 3z is formed on the substrate 1z. In this pattern, the recesses of the mold correspond to the protrusions of the hardened material, and the protrusions of the mold correspond to the recesses of the hardened material. In other words, the uneven pattern of the mold 4z has been transferred to the imprint material 3z.

[0053] As shown in Figure 8(e), when etching is performed using the cured material pattern as an etching-resistant mask, the parts of the workpiece 2z surface that are free of or have a thin remaining cured material are removed, forming grooves 5z. As shown in Figure 8(f), when the cured material pattern is removed, an article with grooves 5z formed on the surface of the workpiece 2z can be obtained. Here, the cured material pattern was removed, but it may also be used without removal after processing, for example, as an interlayer insulating film included in semiconductor devices, i.e., as a component of the article.

[0054] This specification and drawings include the following disclosures: (Item 1) An imprint apparatus for forming a pattern by bringing an imprint material on a partial field of a substrate into contact with a pattern area of ​​a mold and curing the imprint material, An adjustment unit for adjusting the relative position between the substrate and the mold, A control unit controls the adjustment unit to bring the imprint material and the pattern region into contact with the pattern region such that the partial field has an offset in the direction inward of the substrate relative to the pattern region, and then align the pattern region and the partial field. An imprinting device characterized by comprising the following features. (Item 2) The control unit reduces the alignment error between the pattern region and the partial field during the alignment. The imprinting apparatus described in item 1, characterized by the features described herein. (Item 3) The control unit does not expand the contact area between the pattern area and the imprint material during the alignment. The imprint apparatus described in item 1, characterized by the features described herein. (Item 4) The control unit reduces the contact area between the pattern area and the imprint material during the alignment. The imprinting apparatus described in item 1, characterized by the features described herein. (Item 5) When the pattern region is superimposed on the partial field without alignment error, the center of the pattern region is taken as the virtual center. The control unit brings the imprint material and the pattern region into contact with the pattern region in a direction from the center of the pattern region toward the virtual center, such that the partial field has the offset relative to the pattern region. An imprint apparatus according to any one of items 1 to 4, characterized by the above. (Item 6) The control unit brings the imprint material and the pattern region into contact with the pattern region in a direction from the center of the pattern region toward the center of the substrate, such that the partial field has the offset relative to the pattern region. An imprint apparatus according to any one of items 1 to 4, characterized by the above. (Item 7) The control unit brings the imprint material and the pattern region into contact with the pattern region in a direction toward the center of the substrate from the center of gravity of the partial field, such that the partial field has the offset relative to the pattern region. An imprint apparatus according to any one of items 1 to 4, characterized by the above. (Item 8) A part of the shape of the aforementioned partial field is composed of an arc, The control unit brings the imprint material and the pattern region into contact with the pattern region in a direction toward the center of the substrate from an arbitrary position on the arc, such that the partial field has the offset relative to the pattern region. An imprint apparatus according to any one of items 1 to 4, characterized by the above. (Item 9) A part of the shape of the aforementioned partial field is composed of an arc, The control unit brings the imprint material and the pattern region into contact with the pattern region in a direction from the center of the arc toward the center of the substrate, such that the partial field has the offset relative to the pattern region. An imprint apparatus according to any one of items 1 to 4, characterized by the above. (Item 10) The control unit makes the contact area between the pattern area and the imprint material smaller than the contact area between the partial field and the imprint material during the alignment. An imprint apparatus according to any one of items 1 to 9, characterized by the above. (Item 11) The control unit determines the relative drive amount between the substrate and the mold necessary to keep the alignment error between the mold and the partial field within an acceptable range, based on the measurement result of the position of the partial field, and determines a corrected drive amount by correcting the drive amount based on a predetermined offset amount. The control unit controls the adjustment unit so that the relative position between the mold and the partial field is adjusted based on the correction drive amount before the imprint material and the pattern area come into contact. An imprint apparatus according to any one of items 1 to 10, characterized in that it is an imprint apparatus. (Item 12) An imprinting method for forming a pattern by bringing an imprint material on a partial field of a substrate into contact with a pattern area of ​​a mold and curing the imprint material, A contact step of bringing the imprint material and the pattern region into contact with the pattern region such that the partial field has an offset in the direction inward of the substrate with respect to the pattern region, After the contact step, an alignment step is performed to align the pattern region and the partial field. An imprinting method characterized by including the following. (Item 13) The alignment process is performed in such a way that the alignment error between the pattern region and the partial field is reduced. The imprinting method described in item 12, characterized by the features described herein. (Item 14) The alignment process is carried out in such a way that the contact area between the pattern area and the imprint material does not expand. The imprinting method described in item 12, characterized by the features described herein. (Item 15) The alignment process is performed such that the contact area between the pattern area and the imprint material is reduced. The imprinting method described in item 12, characterized by the features described herein. (Item 16) When the pattern region is superimposed on the partial field without alignment error, the center of the pattern region is taken as the virtual center. In the contact step, the imprint material and the pattern region are brought into contact with the pattern region in a direction from the center of the pattern region toward the virtual center, such that the partial field has the offset relative to the pattern region. An imprinting method according to any one of items 12 to 15, characterized by the features described herein. (Item 17) In the contact step, the imprint material and the pattern region are brought into contact with the pattern region in a direction from the center of the pattern region toward the center of the substrate, such that the partial field has the offset relative to the pattern region. An imprinting method according to any one of items 12 to 15, characterized by the features described herein. (Item 18) In the contact step, the imprint material and the pattern region are brought into contact with the pattern region in a direction toward the center of the substrate from the center of gravity of the partial field, such that the partial field has the offset relative to the pattern region. An imprinting method according to any one of items 12 to 15, characterized by the features described herein. (Item 19) A part of the shape of the aforementioned partial field is composed of an arc, In the contact step, the imprint material and the pattern region are brought into contact with the pattern region in a direction toward the center of the substrate from an arbitrary position on the arc, such that the partial field has the offset relative to the pattern region. An imprinting method according to any one of items 12 to 15, characterized by the features described herein. (Item 20) A part of the shape of the aforementioned partial field is composed of an arc, In the contact step, the imprint material and the pattern region are brought into contact with the pattern region in a direction from the center of the arc toward the center of the substrate, such that the partial field has the offset with respect to the pattern region. An imprinting method according to any one of items 12 to 15, characterized by the features described herein. (Item 21) The alignment process is performed such that the contact area between the pattern region and the imprint material is smaller than the contact area between the partial field and the imprint material. An imprinting method according to any one of items 12 to 20, characterized by the following: (Item 22) A determination step of determining the corrected drive amount by correcting the drive amount based on the offset, which is necessary to determine the relative drive amount between the substrate and the mold in order to keep the alignment error between the mold and the partial field within an acceptable range based on the measurement result of the position of the partial field, The process further includes an adjustment step of adjusting the relative position between the mold and the partial field based on the modified drive amount, The contact step is performed after the adjustment step. An imprinting method according to any one of items 12 to 21, characterized by the following: (Item 23) A pattern formation step of forming a pattern on a substrate by an imprint method described in any one of items 12 to 22, A processing step to obtain an article by processing the substrate that has undergone the pattern formation step, A method for manufacturing articles, characterized by including the following: (Item 24) A program that causes an imprint device to execute the imprint method described in any one of items 12 through 22. (others) The invention is not limited to the embodiments described above, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, claims are attached to disclose the scope of the invention. [Explanation of symbols]

[0055] 1: Imprint machine, 8: mold, 8a: pattern area, 10: substrate, 100: full field, 101: partial field, 110: substrate edge

Claims

1. An imprint apparatus for forming a pattern by bringing an imprint material on a partial field of a substrate into contact with a pattern area of ​​a mold and curing the imprint material, An adjustment unit for adjusting the relative position between the substrate and the mold, A control unit controls the adjustment unit to bring the imprint material and the pattern region into contact with the pattern region such that the partial field has an offset in the direction inward of the substrate relative to the pattern region, and then align the pattern region and the partial field. An imprinting device characterized by comprising the following features.

2. The control unit reduces the alignment error between the pattern region and the partial field during the alignment. The imprint apparatus according to feature 1.

3. The control unit does not expand the contact area between the pattern area and the imprint material during the alignment. The imprint apparatus according to feature 1.

4. The control unit reduces the contact area between the pattern area and the imprint material during the alignment. The imprint apparatus according to feature 1.

5. When the pattern region is superimposed on the partial field without alignment error, the center of the pattern region is taken as the virtual center. The control unit brings the imprint material and the pattern region into contact with the pattern region in a direction from the center of the pattern region toward the virtual center, such that the partial field has the offset relative to the pattern region. The imprint apparatus according to feature 1.

6. The control unit brings the imprint material and the pattern region into contact with the pattern region in a direction from the center of the pattern region toward the center of the substrate, such that the partial field has the offset relative to the pattern region. The imprint apparatus according to feature 1.

7. The control unit brings the imprint material and the pattern region into contact with the pattern region in a direction toward the center of the substrate from the center of gravity of the partial field, such that the partial field has the offset relative to the pattern region. The imprint apparatus according to feature 1.

8. A part of the shape of the aforementioned partial field is composed of an arc, The control unit brings the imprint material and the pattern region into contact with the pattern region in a direction toward the center of the substrate from an arbitrary position on the arc, such that the partial field has the offset relative to the pattern region. The imprint apparatus according to feature 1.

9. A part of the shape of the aforementioned partial field is composed of an arc, The control unit brings the imprint material and the pattern region into contact with the pattern region in a direction from the center of the arc toward the center of the substrate, such that the partial field has the offset relative to the pattern region. The imprint apparatus according to feature 1.

10. The control unit makes the contact area between the pattern area and the imprint material smaller than the contact area between the partial field and the imprint material during the alignment. The imprint apparatus according to feature 1.

11. The control unit determines, based on the position of the partial field, the relative drive amount between the substrate and the mold necessary to keep the alignment error between the mold and the partial field within an acceptable range, and determines a corrected drive amount by correcting the drive amount based on a predetermined offset amount. The control unit controls the adjustment unit so that the relative position between the mold and the partial field is adjusted based on the correction drive amount before the imprint material and the pattern area come into contact. The imprint apparatus according to any one of claims 1 to 10.

12. An imprinting method for forming a pattern by bringing an imprint material on a partial field of a substrate into contact with a pattern area of ​​a mold and curing the imprint material, A contact step of bringing the imprint material and the pattern region into contact with the pattern region such that the partial field has an offset in the direction inward of the substrate with respect to the pattern region, After the contact step, an alignment step is performed to align the pattern region and the partial field. An imprinting method characterized by including the following.

13. The alignment process is performed in such a way that the alignment error between the pattern region and the partial field is reduced. The imprint method according to feature 12.

14. The alignment process is carried out in such a way that the contact area between the pattern area and the imprint material does not expand. The imprint method according to feature 12.

15. The alignment process is performed such that the contact area between the pattern area and the imprint material is reduced. The imprint method according to feature 12.

16. When the pattern region is superimposed on the partial field without alignment error, the center of the pattern region is taken as the virtual center. In the contact step, the imprint material and the pattern region are brought into contact with the pattern region in a direction from the center of the pattern region toward the virtual center, such that the partial field has the offset relative to the pattern region. The imprint method according to feature 12.

17. In the contact step, the imprint material and the pattern region are brought into contact with the pattern region in a direction from the center of the pattern region toward the center of the substrate, such that the partial field has the offset relative to the pattern region. The imprint method according to feature 12.

18. In the contact step, the imprint material and the pattern region are brought into contact with the pattern region in a direction toward the center of the substrate from the center of gravity of the partial field, such that the partial field has the offset relative to the pattern region. The imprint method according to feature 12.

19. A part of the shape of the aforementioned partial field is composed of an arc, In the contact step, the imprint material and the pattern region are brought into contact with the pattern region in a direction toward the center of the substrate from an arbitrary position on the arc, such that the partial field has the offset relative to the pattern region. The imprint method according to feature 12.

20. A part of the shape of the aforementioned partial field is composed of an arc, In the contact step, the imprint material and the pattern region are brought into contact with the pattern region in a direction from the center of the arc toward the center of the substrate, such that the partial field has the offset with respect to the pattern region. The imprint method according to feature 12.

21. The alignment process is performed such that the contact area between the pattern region and the imprint material is smaller than the contact area between the partial field and the imprint material. The imprint method according to feature 12.

22. A determination step of determining the relative drive amount between the substrate and the mold necessary to keep the alignment error between the mold and the partial field within an acceptable range based on the position of the partial field, and determining the corrected drive amount by correcting the drive amount based on the offset, The process further includes an adjustment step of adjusting the relative position between the mold and the partial field based on the modified drive amount, The contact step is performed after the adjustment step. The imprint method according to any one of claims 12 to 21, characterized by the features described herein.

23. A pattern forming step of forming a pattern on a substrate by an imprint method according to any one of claims 12 to 21, A processing step to obtain an article by processing the substrate that has undergone the pattern formation step, A method for manufacturing articles, characterized by including the following:

24. A program that causes an imprint device to execute the imprint method described in any one of claims 12 to 21.

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