Semiconductor equipment

Abstract

To provide a semiconductor device that can reduce inductance. [Solution] The semiconductor device comprises a first metal plate, a first semiconductor chip disposed on the first metal plate with one side electrically connected to the first metal plate, a second metal plate disposed adjacent to the first metal plate when viewed in the thickness direction of the first metal plate, a second semiconductor chip disposed on the second metal plate with one side electrically connected to the second metal plate, a conductive member electrically connecting the other side of the first semiconductor chip to the second metal plate, and a third metal plate electrically connected to the other side of the second semiconductor chip. The third metal plate includes a first overlapping region that overlaps with the first metal plate when viewed in the thickness direction of the first metal plate.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device.

Background Art

[0002] Techniques related to semiconductor modules including semiconductor elements have been disclosed (see, for example, Patent Document 1). The semiconductor module disclosed in Patent Document 1 includes a conductive substrate having a main surface, a semiconductor element, a conductive member, a first input terminal, a second input terminal, and a third input terminal, a control terminal, and a sealing resin. The control terminal is disposed on the main surface and extends along the thickness direction.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In a semiconductor device, suppression of a surge voltage is required from the viewpoint of preventing damage to a semiconductor element during operation. From the viewpoint of aiming at suppression of the surge voltage, it is desirable to reduce inductance in the semiconductor device. In the semiconductor module disclosed in Patent Document 1, sufficient reduction of inductance cannot be achieved.

[0005] Therefore, one of the objects is to provide a semiconductor device capable of reducing inductance.

Means for Solving the Problems

[0006] A semiconductor device according to this disclosure comprises: a first metal plate; a first semiconductor chip disposed on the first metal plate with one side electrically connected to the first metal plate; a second metal plate disposed adjacent to the first metal plate when viewed in the thickness direction of the first metal plate; a second semiconductor chip disposed on the second metal plate with one side electrically connected to the second metal plate; a conductive member electrically connecting the other side of the first semiconductor chip to the second metal plate; and a third metal plate electrically connected to the other side of the second semiconductor chip. The third metal plate includes a first overlapping region that overlaps with the first metal plate when viewed in the thickness direction of the first metal plate. [Effects of the Invention]

[0007] Such semiconductor devices can reduce inductance. [Brief explanation of the drawing]

[0008] [Figure 1] Figure 1 is a schematic perspective view of the semiconductor device in Embodiment 1. [Figure 2] Figure 2 is a schematic plan view of the semiconductor device shown in Figure 1. [Figure 3] Figure 3 is a schematic front view of the semiconductor device shown in Figure 1. [Figure 4] Figure 4 is a schematic rear view of the semiconductor device shown in Figure 1. [Figure 5] Figure 5 is a schematic side view of the semiconductor device shown in Figure 1. [Figure 6] Figure 6 is a schematic perspective view showing the semiconductor device shown in Figure 1 with the second resin component, which will be described later, removed. [Figure 7] Figure 7 is a schematic plan view of the semiconductor device shown in Figure 6. [Figure 8] Figure 8 is a schematic side view of the semiconductor device shown in Figure 6. [Figure 9] Figure 9 is a schematic bottom view of the first resin member as seen in the direction indicated by arrow Z. [Figure 10] Figure 10 is a schematic side view showing an enlarged portion of the semiconductor device shown in Figure 6. [Figure 11]Figure 11 is an enlarged view of region XI in Figure 10. [Figure 12] Figure 12 is a schematic cross-sectional view showing a part of the first resin member. [Figure 13] Figure 13 is a schematic cross-sectional view showing a portion of the first resin member, including the snap-fit ​​section. [Figure 14] Figure 14 is a schematic cross-sectional view showing a portion of the first resin member including the protruding pin. [Figure 15] Figure 15 is a schematic cross-sectional view showing a portion of the stepped section of the third metal plate. [Figure 16] Figure 16 is a schematic cross-sectional view showing a portion of the stepped section of the third metal plate. [Figure 17] Figure 17 is a schematic cross-sectional view showing a portion of the stepped section of the third metal plate. [Modes for carrying out the invention]

[0009] [Description of Embodiments in this Disclosure] (1) The semiconductor device according to the present disclosure comprises a first metal plate, a first semiconductor chip disposed on the first metal plate with one side electrically connected to the first metal plate, a second metal plate disposed adjacent to the first metal plate when viewed in the thickness direction of the first metal plate, a second semiconductor chip disposed on the second metal plate with one side electrically connected to the second metal plate, a conductive member electrically connecting the other side of the first semiconductor chip to the second metal plate, and a third metal plate electrically connected to the other side of the second semiconductor chip. The third metal plate includes a first overlapping region that overlaps with the first metal plate when viewed in the thickness direction of the first metal plate.

[0010] According to the semiconductor device of the present disclosure, the first metal plate and the second metal plate are arranged adjacent to each other when viewed in the thickness direction of the first metal plate, and the third metal plate includes a first overlapping region that overlaps with the first metal plate. Then, in this first overlapping region, the first metal plate and the third metal plate form a parallel plate. During the operation of the semiconductor device, since the direction of the current flowing through the first metal plate and the direction of the current flowing through the third metal plate are opposite, the inductance due to the mutual inductance can be subtracted from the overall inductance. Therefore, according to such a semiconductor device, the reduction of inductance can be achieved.

[0011] (2) In the above (1), the area of the first overlapping region may be 25 mm 2 or more. Since a general printed circuit board has a length of 5 mm in the vertical direction and a length of 5 mm in the horizontal direction, by doing so, when arranging the first control board on the first overlapping region, it can be more reliably arranged on the first overlapping region.

[0012] (3) The semiconductor device according to the present disclosure includes a first metal plate, a first semiconductor chip arranged on the first metal plate and having one surface electrically connected to the first metal plate, a second metal plate arranged adjacent to the first metal plate when viewed in the thickness direction of the first metal plate, a second semiconductor chip arranged on the second metal plate and having one surface electrically connected to the second metal plate, a conductive member electrically connecting the other surface of the first semiconductor chip and the second metal plate, a third metal plate electrically connected to the other surface of the second semiconductor chip, and a first control board for controlling the operation of the first semiconductor chip. The third metal plate includes a first overlapping region that overlaps with the first metal plate when viewed in the thickness direction of the first metal plate. The first control board is arranged on the third metal plate.

[0013] In the semiconductor device described above, in the first overlapping region, the first metal plate and the third metal plate form a parallel plate. During operation of the semiconductor device, the direction of the current flowing through the first metal plate and the direction of the current flowing through the third metal plate are opposite, so the inductance due to mutual inductance can be subtracted from the total inductance. Furthermore, the first control substrate is placed on the third metal plate. During operation of the semiconductor device, the potential of the third metal plate is lower than that of the first metal plate, which has a relatively high potential, so the reliability of insulation to the first control substrate can be increased. Therefore, the semiconductor device can be operated stably over a long period of time while reducing inductance.

[0014] (4) In (3) above, the first control board may be placed on the first overlapping region. By doing so, the third metal plate is interposed between the first control board and the first metal plate, so that the first metal plate and the third metal plate can form parallel plates in close proximity and over a large area. Therefore, the inductance can be reduced further.

[0015] (5) The semiconductor device according to the present disclosure comprises a first metal plate, a first semiconductor chip disposed on the first metal plate with one side electrically connected to the first metal plate, a second metal plate disposed adjacent to the first metal plate when viewed in the thickness direction of the first metal plate, a second semiconductor chip disposed on the second metal plate with one side electrically connected to the second metal plate, a conductive member electrically connecting the other side of the first semiconductor chip to the second metal plate, a third metal plate electrically connected to the other side of the second semiconductor chip, and a second control substrate for controlling the operation of the second semiconductor chip. The third metal plate includes a second overlapping region that overlaps with the second metal plate when viewed in the thickness direction of the first metal plate. The second control substrate is disposed on the third metal plate.

[0016] In the semiconductor device described above, in the second overlapping region, the second metal plate and the third metal plate form a parallel plate. During operation of the semiconductor device, the direction of the current flowing through the second metal plate and the direction of the current flowing through the third metal plate are opposite, so the inductance due to mutual inductance can be subtracted from the total inductance. Therefore, such a semiconductor device can reduce inductance. Furthermore, the second control substrate is placed on the third metal plate. Since the potential of the third metal plate is lower than that of the second metal plate, which is at a relatively high potential, the reliability of insulation to the second control substrate can be increased. Therefore, it becomes easier to operate the semiconductor device stably over a long period of time.

[0017] (6) In (5) above, the second control board may be placed on the second overlapping region. By doing so, the third metal plate is interposed between the second control board and the second metal plate, so that the second metal plate and the third metal plate can form parallel plates in close proximity and over a large area. Therefore, the inductance can be reduced further.

[0018] (7) In any of (1) to (6) above, the third metal plate may be directly bonded to the second semiconductor chip. By doing so, it becomes easier to pass a large current compared to electrical connections using wires, etc., and the inductance can be reduced.

[0019] (8) In any of (3) to (7) above, the first control board may be attached to the third metal plate by a bent portion formed by bending a part of the third metal plate toward the first control board, crimping using positioning pins, fixing using adhesive, or fixing using press nuts and bolts. By doing so, the first control board can be reliably attached to the third metal plate in the correct position. Therefore, the risk of the first control board being attached in a misaligned position can be reduced.

[0020] (9) In any of (5) to (7) above, the second control board may be attached to the third metal plate by a bent portion formed by bending a part of the third metal plate toward the second control board, by crimping using positioning pins, by fixing with adhesive, or by fixing with press nuts and bolts. By doing so, the second control board can be reliably attached to the third metal plate in the correct position. Therefore, the risk of the second control board being attached in a misaligned position can be reduced.

[0021] (10) In any of (1) to (9) above, the first resin member may be further provided, which is attached to the third metal plate so as to cover a part of the third metal plate and includes a portion located between the first metal plate and the third metal plate. By doing so, the first resin member is interposed between the first metal plate and the third metal plate, further reducing the risk of contact between the first metal plate and the third metal plate. In addition, the portion of the third metal plate covered by the first resin member can avoid contact with other metal members. Therefore, the semiconductor device can be operated more reliably and safely.

[0022] (11) In any of (3) to (10) above, the first resin member may be further provided, which is attached to the third metal plate so as to cover a part of the third metal plate and includes a portion located between the first metal plate and the third metal plate. The first control board may be attached to the third metal plate by one of the following: a snap-fit ​​portion provided on the first resin member that protrudes in the thickness direction and is elastically deformable; a protruding pin that causes a part of the first resin member to protrude toward the first control board; a fitting recess that causes a part of the first resin member to be recessed along the outer shape of the first control board; fixing to the first resin member using adhesive; or fixing by cutting a part of the first resin member using tapping screws. In this way, the first control board can be attached to the third metal plate with high precision using the first resin member. Therefore, the risk of the first control board being attached in a misaligned position can be reduced.

[0023] (12) In any of (5) to (11) above, the first resin member may be further provided, which is attached to the third metal plate so as to cover a part of the third metal plate and includes a portion located between the first metal plate and the third metal plate. The second control board may be attached to the third metal plate by any of the following: a snap-fit ​​portion provided on the first resin member that protrudes in the thickness direction and is elastically deformable; a protruding pin that causes a part of the first resin member to protrude toward the second control board; a fitting recess that causes a part of the first resin member to be recessed in accordance with the outer shape of the second control board; fixing to the first resin member using adhesive; or fixing by cutting away a part of the first resin member using tapping screws. In this way, the second control board can be attached to the third metal plate with high precision using the first resin member. Therefore, the risk of the second control board being attached in a misaligned position can be reduced.

[0024] (13) In any of (1) to (12) above, a first resin member may be further provided, which is attached to the third metal plate so as to cover a part of the third metal plate and includes a portion located between the first metal plate and the third metal plate. The first resin member may be provided with a columnar boss that protrudes in the direction in which the first metal plate is located. In this way, the gap between the first metal plate and the third metal plate can be easily adjusted by the length of the boss. This makes it possible to adjust the length of the boss considering the viscosity of the molten sealing resin, etc., and to facilitate the flow of the molten sealing resin into the gap between the first metal plate and the third metal plate. Therefore, high insulation performance can be reliably achieved. In addition, the orientation of the third metal plate can be controlled by the boss. In particular, a cantilever state when the third metal plate and the other side of the second semiconductor chip are connected can be avoided. Therefore, stable holding of the third metal plate becomes possible.

[0025] (14) In (13) above, the tip of the boss may be in contact with the first metal plate. By doing so, the position of the third metal plate can be more stabilized by the boss. Therefore, more stable holding of the third metal plate becomes possible.

[0026] (15) In any of (1) to (14) above, the third metal plate may be provided with an opening that penetrates in the thickness direction. Viewed in the thickness direction of the third metal plate, at least one of the first semiconductor chip and the second semiconductor chip may be placed within the opening. By doing so, when molten sealing resin is poured in for sealing, trapped air can be easily escaped to the upper side of the third metal plate through the opening instead of remaining under the third metal plate. Furthermore, even after the third metal plate has been attached, when electrically connecting an electrode provided on the other side of the first semiconductor chip or an electrode provided on the other side of the second semiconductor chip to another metal member with a wire or the like, wire bonding can be performed using the opening. Thus, productivity can be improved.

[0027] [Details of the embodiments of this disclosure] Next, embodiments of the semiconductor device of this disclosure will be described with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and their descriptions will not be repeated.

[0028] (Embodiment 1) A semiconductor device in Embodiment 1 of this disclosure will now be described. Figure 1 is a schematic perspective view of the semiconductor device in Embodiment 1. Figure 2 is a schematic plan view of the semiconductor device shown in Figure 1. Figure 2 is a view in the direction indicated by arrow II in Figure 1. Figure 3 is a schematic front view of the semiconductor device shown in Figure 1. Figure 3 is a view in the direction indicated by arrow III in Figure 1. Figure 4 is a schematic rear view of the semiconductor device shown in Figure 1. Figure 4 is a view in the direction indicated by arrow IV in Figure 1. Figure 5 is a schematic side view of the semiconductor device shown in Figure 1. Figure 5 is a view in the direction indicated by arrow V in Figure 1. Figure 6 is a schematic perspective view of the semiconductor device shown in Figure 1 with the second resin member, which will be described later, removed. Figure 7 is a schematic plan view of the semiconductor device shown in Figure 6. Figure 7 is a view in the direction indicated by arrow VII in Figure 6. Figure 8 is a schematic side view of the semiconductor device shown in Figure 6. Figure 8 is a view in the direction indicated by arrow VIII in Figure 6.

[0029] Referring to Figures 1, 2, 3, 4, 5, 6, 7, and 8, the semiconductor device 11A in Embodiment 1 employs a 2-in-1 structure and has an upper arm and a lower arm. In this embodiment, the current path controlled by the first control terminal 23A, which will be described later, constitutes the upper arm, and the current path controlled by the first control terminal 23B, which will be described later, constitutes the lower arm.

[0030] The semiconductor device 11A includes a base substrate 12A, a first metal plate 13A, a second metal plate 14A, a third metal plate 15A, a first semiconductor chip 16A, a first semiconductor chip 16B, a second semiconductor chip 17A, a second semiconductor chip 17B, a conductive member 18A, a conductive member 18B, a first control board 21A, a second control board 22A, a first control terminal 23A, a first control terminal 23B, a second control terminal 24A, a second control terminal 24B, a first resin member 25A, and a second resin member 26A. In Figure 1, etc., a parting line 19A that appears on the outer shape of the second resin member 26A during transfer molding is shown, but this parting line 19A can be removed from the surface of the final product by sanding or the like. Multiple first semiconductor chips 16A and 16B are included; in this embodiment, two are included. Multiple second semiconductor chips 17A and 17B are included; in this embodiment, two are included. Of course, there may be one first semiconductor chip 16A and one second semiconductor chip 17A, or three or more. In the drawings shown in Figure 1 and subsequent figures, the Z direction indicates the thickness direction of the first metal plate 13A, the X direction indicates the direction in which the two first semiconductor chips 16A and 16B are aligned, and the Y direction indicates the direction in which the first semiconductor chip 16A and the second semiconductor chip 17A are aligned. The X, Y, and Z directions are orthogonal to each other. The thickness direction of the first metal plate 13A is also the thickness direction of the second metal plate 14A and the thickness direction of the third metal plate 15A.

[0031] The base substrate 12A is rectangular in shape when viewed in the thickness direction (Z direction). The base substrate 12A includes a single insulating plate 27A and metal layers 28A and 28B formed on the front and back surfaces of the insulating plate 27A, respectively. That is, the metal layers 28A and 28B are provided in the Z direction or the opposite direction of the insulating plate 27A. The base substrate 12A has a laminated structure in which the insulating plate 27A is sandwiched between a pair of metal layers 28A and 28B. The shape of one metal layer 28A is a single sheet, and the shape of the other metal layer 28B is two sheets separated in the Y direction. That is, the other metal layer 28B is divided into two first regions 29A and second regions 29B. Examples of materials for the insulating plate 27A include aluminum oxide (Al2O3), silicon nitride (SiN), and aluminum nitride (AlN). Examples of materials for metal layer 28A and metal layer 28B include copper (Cu).

[0032] The first metal plate 13A and the second metal plate 14A are each single plate-shaped members. The first metal plate 13A includes a first plate-shaped portion 31A, which has a rectangular outer shape when viewed in the thickness direction, and a first terminal 32A that extends in a strip shape along the Y direction from the Y-direction end of the first plate-shaped portion 31A. The first plate-shaped portion 31A and the first terminal 32A are integral. The first plate-shaped portion 31A is covered by a second resin member 26A. The first terminal 32A has a portion that is exposed from the second resin member 26A. The first metal plate 13A is attached to the base substrate 12A by joining the first plate-shaped portion 31A to a first region 29A of the metal layer 28B. For joining the first plate-shaped portion 31A to the metal layer 28A, for example, solder is used. In this embodiment, the first plate-like portion 31A and the first terminal 32A are considered to be a single unit, but the invention is not limited to this, and the first plate-like portion 31A and the first terminal 32A may be separate.

[0033] The second metal plate 14A includes a second plate-like portion 33A having a rectangular outer shape when viewed in the thickness direction, and a second terminal 34A extending from the end of the second plate-like portion 33A in the opposite direction to the Y direction along the opposite direction to the Y direction. The second plate-like portion 33A and the second terminal 34A are integral. The second terminal 34A has a portion that is exposed from the second resin member 26A. The second metal plate 14A is attached to the base substrate 12A by joining the second plate-like portion 33A to the second region 29B of the metal layer 28B. For joining the second plate-like portion 33A to the metal layer 28B, for example, solder is used. In the semiconductor device 11A, the first terminal 32A is used as, for example, a P terminal, and the second terminal 34A is used as, for example, an O terminal. In this embodiment, the second plate-like portion 33A and the second terminal 34A are considered to be a single unit, but the embodiment is not limited to this, and the second plate-like portion 33A and the second terminal 34A may be separate.

[0034] The first semiconductor chip 16A, the first semiconductor chip 16B, the second semiconductor chip 17A, and the second semiconductor chip 17B are each vertical transistor chips. In this embodiment, the first semiconductor chip 16B, the second semiconductor chip 17A, and the second semiconductor chip 17B are each, for example, metal-oxide-semiconductor field-effect transistors (MOSFETs). The first semiconductor chip 16A, the first semiconductor chip 16B, the second semiconductor chip 17A, and the second semiconductor chip 17B are each switching elements. The semiconductor device 11A may also include diode chips such as Schottky barrier diodes (SBDs) to correspond to the first semiconductor chip 16A, the first semiconductor chip 16B, the second semiconductor chip 17A, and the second semiconductor chip 17B.

[0035] The first semiconductor chip 16A, the first semiconductor chip 16B, the second semiconductor chip 17A, and the second semiconductor chip 17B each include a drain electrode, a source electrode, and a gate electrode. In the first semiconductor chip 16A, the drain electrode is provided on one surface that is located in the opposite direction to the Z direction and faces the first plate-like portion 31A. The surface of the first semiconductor chip 16A on which the drain electrode is located is joined to the first metal plate 13A and electrically connected. A conductive bonding material, such as solder or silver paste bonding material, is used to join the first semiconductor chip 16A and the first metal plate 13A. Both the source electrode and the gate electrode are provided on the other surface of the first semiconductor chip 16A that is located in the Z direction. In the first semiconductor chip 16A, the gate electrode, which has a smaller area than the source electrode, is positioned on the Y-direction end side. The configuration of the first semiconductor chip 16B is the same as that of the first semiconductor chip 16A, so its description is omitted.

[0036] In the second semiconductor chip 17A, the drain electrode is provided on one surface that is located in the opposite direction to the Z direction and faces the second plate-like portion 33A. The surface of the second semiconductor chip 17A on which the drain electrode is located is joined to the second metal plate 14A and electrically connected. A conductive bonding material, such as solder or silver paste bonding material, is used for joining the second semiconductor chip 17A and the second metal plate 14A. Both the source electrode and the gate electrode are provided on the other surface of the second semiconductor chip 17A that is located in the Z direction. In the second semiconductor chip 17A, the gate electrode, which has a smaller area than the source electrode, is positioned on the end side opposite to the Y direction. The configuration of the second semiconductor chip 17B is the same as that of the second semiconductor chip 17A, so its description is omitted.

[0037] The source electrodes of the second semiconductor chip 17A and the second semiconductor chip 17B are electrically connected to the third metal plate 15A. Specifically, the source electrodes of the second semiconductor chip 17A and the second semiconductor chip 17B are directly bonded to the third metal plate 15A. For this bonding, for example, solder or silver paste bonding material can be used.

[0038] The first semiconductor chip 16A and the first semiconductor chip 16B are arranged on the first metal plate 13A. Specifically, the first semiconductor chip 16A and the first semiconductor chip 16B are arranged side by side in the X direction on the first plate-shaped portion 31A of the first metal plate 13A. The second semiconductor chip 17A and the second semiconductor chip 17B are arranged on the second metal plate 14A. Specifically, the second semiconductor chip 17A and the second semiconductor chip 17B are arranged side by side in the X direction on the second plate-shaped portion 33A of the second metal plate 14A.

[0039] Conductive members 18A and 18B are each formed by bending a strip of metal plate in the Z direction or the opposite direction. The Y-direction end of conductive member 18A is connected to the source electrode of the first semiconductor chip 16A. The Y-direction end of conductive member 18A is connected to the second plate-shaped portion 33A of the second metal plate 14A. The Y-direction end of conductive member 18B is connected to the source electrode of the first semiconductor chip 16B. The Y-direction end of conductive member 18B is connected to the second plate-shaped portion 33A of the second metal plate 14A. The conductive members 18A and 18B are joined to the second metal plate 14A using a conductive joining material, or they are joined by welding with a laser or the like. In the case of laser welding, welding can be performed relatively easily because the openings 41A and 41C, described later, are provided in the third metal plate 15A.

[0040] The third metal plate 15A is a single plate-shaped member. The third metal plate 15A includes a third plate-shaped portion 35A, which has a rectangular outer shape when viewed in the thickness direction, and two third terminals 36A and 37A that extend in a strip shape along the Y direction from the Y-direction end of the third plate-shaped portion 35A. The third plate-shaped portion 35A and the third terminals 36A and 37A are integral. The third terminals 36A and 37A are spaced apart in the X direction. In the semiconductor device 11A, the first terminal 32A is positioned between the third terminals 36A and 37A. Each of the third terminals 36A and 37A has a portion that is exposed from the second resin member 26A. In this embodiment, a part of the third metal plate 15A is attached to and fixed to the first resin member 25A by insert molding. In semiconductor device 11A, the third terminals 36A and 37A are used as, for example, N terminals. In this embodiment, the third plate-like portion 35A and the third terminals 36A and 37A are integrated, but the third plate-like portion 35A may be separated from at least one of the third terminals 36A and 37A.

[0041] The third metal plate 15A is provided with openings 41A, 41B, 41C, and 41D that penetrate in the thickness direction. Specifically, there are four openings 41A, 41B, 41C, and 41D in the third plate-like portion 35A of the third metal plate 15A. The third metal plate 15A is mounted such that, when viewed in the thickness direction, the first semiconductor chip 16A is placed in opening 41A and the first semiconductor chip 16B is placed in opening 41B. Also, when viewed in the thickness direction, a portion of the second semiconductor chip 17A is exposed at openings 41A and 41C. When viewed in the thickness direction, a portion of the second semiconductor chip 17B is exposed at openings 41B and 41D.

[0042] The third plate-like portion 35A includes three strip-like portions 42A, 42B, and 42C arranged side by side with a gap between them in the X direction. Openings 41A and 41C are located between strip-like portions 42A and 42B in the X direction, and openings 41B and 41D are located between strip-like portions 42B and 42C in the X direction. In addition, the end of the third metal plate 15A in the direction opposite to the Y direction is bent in the direction opposite to the Z direction to form a stepped portion 38A. In the regions where each of the strip-like portions 42A, 42B, and 42C intersects with the stepped portion 38A, drawn portions 43A, 43B, and 43C are provided, which are recessed in the direction opposite to the thickness direction by drawing. These condensed portions 43A, 43B, and 43C make it possible to increase the strength of the strip-shaped portions 42A, 42B, and 42C of the third metal plate 15A.

[0043] The third metal plate 15A includes a connecting portion 44A positioned between openings 41A and 41C to connect strip-shaped portions 42A and 42B, and a connecting portion 44B positioned between openings 41B and 41D to connect strip-shaped portions 42B and 42C. The central regions of connecting portions 44A and 44B in the X direction are each bent in the opposite direction to the Z direction. The central region of the bent connecting portion 44A is directly joined to the source electrode of the second semiconductor chip 17A. The central region of the bent connecting portion 44B is directly joined to the source electrode of the second semiconductor chip 17B. In this way, the third metal plate 15A is electrically connected to the source electrode of the second semiconductor chip 17A and the source electrode of the second semiconductor chip 17B.

[0044] The first resin member 25A is attached to the third metal plate 15A so as to cover a portion of the third metal plate 15A. The first resin member 25A is fixed to the third metal plate 15A by insert molding. The first resin member 25A is attached so as to cover the root areas of the third terminal 36A, the third terminal 37A, the strip-shaped portion 42A, the strip-shaped portion 42B, and the strip-shaped portion 42C. The material of the first resin member 25A is selected such that the melting point of the resin constituting the first resin member 25A is higher than the melting point of the resin constituting the second resin member 26A. Specifically, for example, thermoplastic resins such as PPS (Poly Phenylene Sulfide) resin and PBT (Poly Butylene Terephthalate) are selected as the material of the first resin member 25A. Thermosetting resins such as epoxy resin may also be selected because they do not remelt once cured.

[0045] Next, the specific configuration of the first resin member 25A will be described. Figure 9 is a schematic bottom view of the first resin member 25A as seen in the direction indicated by arrow Z. Figure 10 is a schematic side view showing an enlarged portion of the semiconductor device 11A shown in Figure 6. Figure 11 is an enlarged view of region XI in Figure 10.

[0046] Referring together to Figures 9, 10, and 11, the first resin member 25A is provided with columnar bosses 51A, 51B, 51C, and 51D. In this embodiment, bosses 51A, 51B, 51C, and 51D are cylindrical. The outer shape of the first resin member 25A is rectangular, with the length in the X direction being longer than the length in the Y direction when viewed in the thickness direction. Bosses 51A, 51B, 51C, and 51D are provided at positions corresponding to the four corners of the rectangular first resin member 25A, so as to protrude from the bottom surface of the first resin member 25A in the direction in which the first metal plate 13A is located. The lengths of bosses 51A, 51B, 51C, and 51D, i.e., the distance in the thickness direction, are all the same. The lengths of bosses 51A, 51B, 51C, and 51D are arbitrarily determined according to the distance between the bottom surface 52A of the first resin member 25A and the first metal plate 13A, the viscosity of the second resin member 26A when it is melted, etc. In the semiconductor device 11A, the tips of bosses 51A, 51B, 51C, and 51D are in contact with the first metal plate 13A. That is, the third metal plate 15A is supported by bosses 51A, 51B, 51C, and 51D with a gap between it and the first metal plate 13A. By doing so, a gap D between the first metal plate 13A and the first resin member 25A in the thickness direction shown in Figure 11 can be provided, and the molten second resin member 26A can flow more easily in the direction of arrow W. In this embodiment, the tips of bosses 51A, 51B, 51C, and 51D are in contact with the first metal plate 13A. However, this is not limited to this configuration, and at least one of the tips of bosses 51A, 51B, 51C, and 51D may not be in contact with the first metal plate 13A. In other words, a gap may be provided between at least one of the tips of bosses 51A, 51B, 51C, and 51D and the first metal plate 13A.

[0047] The first control board 21A controls the operation of the first semiconductor chip 16A and the first semiconductor chip 16B. The first control board 21A includes two circuit boards 46A and 46B, and an insulating support board 47A that supports the circuit boards 46A and 46B. One circuit board 46A is electrically connected to the gate electrode of the first semiconductor chip 16A and the gate electrode of the first semiconductor chip 16B by wires 48A and 48B, respectively. The other circuit board 46B is electrically connected to the source electrode of the first semiconductor chip 16A and the source electrode of the first semiconductor chip 16B by wires 49A and 49B, respectively.

[0048] The first control board 21A is placed on the third metal plate 15A. Specifically, the first control board 21A is attached to the upper surface 52B of the first resin member 25A. The first resin member 25A is provided with multiple structures for attaching the first control board 21A. Figure 12 is a schematic cross-sectional view showing a part of the first resin member 25A. Figure 12 corresponds to a view when cut by a plane parallel to the YZ plane. Referring to Figure 12, the first resin member 25A is provided with a fitting recess 53A. The fitting recess 53A is shaped by recessing a part of the upper surface 52B of the first resin member 25A in accordance with the outer shape of the first control board 21A. The first control board 21A is attached to the first resin member 25A using such a fitting recess 53A.

[0049] In this embodiment, the first resin member 25A is provided with a snap-fit ​​portion 54A. Figure 13 is a schematic cross-sectional view showing a part of the first resin member 25A including the snap-fit ​​portion. Figure 13 corresponds to a case where the resin member is cut by a plane parallel to the YZ plane. Referring to Figure 13, the first resin member 25A is provided with a snap-fit ​​portion 54A that protrudes in the thickness direction and is elastically deformable. The tip of the snap-fit ​​portion 54A is claw-shaped toward the side where the first control board 21A is placed. In this way, the first control board 21A can be attached by utilizing the elastic deformation of the snap-fit ​​portion 54A, and the movement of the first control board 21A after attachment can be restricted.

[0050] In this embodiment, the first resin member 25A is provided with a protruding pin. Figure 14 is a schematic cross-sectional view showing a part of the first resin member 25A including the protruding pin. Figure 14 corresponds to a view where the resin member is cut by a plane parallel to the YZ plane. Referring to Figure 14, the first resin member 25A is provided with a protruding pin 56A that protrudes toward the first control board 21A side. The protruding pin 56A is a solid cylindrical shape. The first control board 21A side is provided with a round through-hole 57A that penetrates in the thickness direction. The first control board 21A is mounted on top of the first resin member 25A by fitting the protruding pin 56A into the through-hole 57A.

[0051] In this embodiment, the first control board 21A is attached to the first resin member 25A using a tapping screw 58A, which is used to fix the first control board 21A by cutting off a portion of the first resin member 25A (see Figure 6 in particular). In this embodiment, when attaching the first control board 21A, a snap-fit ​​portion 54A and a protruding pin 56A are provided on the third terminal 36A side in the X direction, and a snap-fit ​​portion 54A and a tapping screw 58A are provided on the second control terminal 24A side. Alternatively, the first control board 21A may be attached to the first resin member 25A by bonding it to the upper surface 52B of the first resin member 25A using an adhesive.

[0052] The second control board 22A controls the operation of the second semiconductor chip 17A and the second semiconductor chip 17B. The second control board 22A includes two circuit boards 46C and 46D, and an insulating support board 47B that supports the circuit boards 46C and 46D. One circuit board 46C is electrically connected to the gate electrode of the second semiconductor chip 17A and the gate electrode of the second semiconductor chip 17B by wires 48C and 48D, respectively. The other circuit board 46D is electrically connected to the source electrode of the second semiconductor chip 17A and the source electrode of the second semiconductor chip 17B by wires 49C and 49D, respectively.

[0053] The second control board 22A is placed on the third metal plate 15A. Specifically, the second control board 22A is attached to the stepped portion 38A of the third metal plate 15A. The stepped portion 38A is provided with multiple structures for attaching the second control board 22A. Figure 15 is a schematic cross-sectional view showing a part of the stepped portion 38A of the third metal plate 15A. Figure 15 corresponds to a cut made by a plane parallel to the YZ plane. Referring to Figure 15, the third metal plate 15A is provided with a bent portion 61A, which is a part of it that is bent towards the second control board 22A. The bent portion 61A is bent into a pin shape. The outer shape of the bent portion 61A is rectangular, specifically square, when viewed in the thickness direction (Z direction). The second control board 22A is also provided with a through hole 62A that penetrates in a rectangular, specifically square, shape in the thickness direction. The second control board 22A is attached to the third metal plate 15A by inserting the bent portion 61A into the through hole 62A.

[0054] Furthermore, in this embodiment, a press-fit pin 63A is provided. Figure 16 is a schematic cross-sectional view showing a part of the stepped portion 38A of the third metal plate 15A. Figure 16 corresponds to a case where the plate is cut along a plane parallel to the YZ plane. Referring to Figure 16, the press-fit pin 63A is press-fitted into the through hole 64A provided in the third metal plate 15A and the through hole 65A provided in the second control board 22A. In this way, the second control board 22A is attached to the third metal plate 15A.

[0055] In this embodiment, a press-fit nut 66A and a bolt 67A are provided. Figure 17 is a schematic cross-sectional view showing a part of the stepped portion 38A of the third metal plate 15A. Figure 17 corresponds to a case where the plate is cut along a plane parallel to the YZ plane. Referring to Figure 17, a press-fit nut 66A is attached to the third metal plate 15A. The second control board 22A is attached to the third metal plate 15A by inserting the body of the bolt 67A into the through hole 68A provided in the third metal plate 15A and the through hole 69A provided in the second control board 22A, and fastening the bolt 67A to the press-fit nut 66A.

[0056] In this embodiment, when attaching the second control board 22A, a bent portion 61A and a bolt 67A are provided on the third terminal 36A side in the X direction, and a bent portion 61A and a press-fit pin 63A are provided on the second control terminal 24A side. In addition, other structures for attaching the second control board 22A to the third metal plate 15A include crimping using positioning pins and fixing with adhesive.

[0057] Furthermore, in this embodiment, the shape of the first control board 21A is the same as that of the second control board 22A. Specifically, for example, the support plate 47A and the support plate 47B have the same thickness, external shape as viewed from the Z direction, and the same position of the through holes 57A, 65A, and 69A. Also, the external shape of the circuit board 46A and the circuit board 46C are the same, and the external shape of the circuit board 46B and the circuit board 46D are the same. In other words, the first control board 21A and the second control board 22A are the same component, differing only in their mounting method, arrangement, and wiring. By doing so, the first control board 21A and the second control board 22A can be made from the same component, thereby improving productivity.

[0058] The first control terminals 23A, 23B, 24A, and 24B are each provided to extend along the Y direction. The first control terminals 23A, 23B, 24A, and 24B are each rod-shaped members and are supported by the second resin member 26A and attached to the semiconductor device 11A. The first control terminals 23A and 23B are each gate control terminals. The second control terminals 24A and 24B are each auxiliary source (Kelvin source) terminals.

[0059] The first control terminal 23A is positioned adjacent to the second control terminal 24A in the X direction, and the first control terminal 23B is positioned adjacent to the second control terminal 24B in the X direction. The first control terminal 23A is positioned adjacent to the third terminal 36A in the X direction, and the second control terminal 24A is positioned adjacent to the first control terminal 23A in the X direction. The first control terminal 23B is positioned adjacent to the second terminal 34A in the opposite direction to the X direction, and the second control terminal 24B is positioned adjacent to the first control terminal 23B in the opposite direction to the X direction. The positions of the first terminal 32A, the second terminal 34A, the third terminal 36A, the third terminal 37A, the first control terminal 23A, the first control terminal 23B, the second control terminal 24A, and the second control terminal 24B in the Z direction are aligned. In other words, the positions in the thickness direction of the first terminal 32A, second terminal 34A, third terminal 36A, third terminal 37A, first control terminal 23A, first control terminal 23B, second control terminal 24A, and second control terminal 24B that are exposed from the second resin member 26A are the same.

[0060] The first control terminal 23A is electrically connected to the circuit board 46A of the first control board 21A by wire 55A. The second control terminal 24A is electrically connected to the circuit board 46B of the first control board 21A by wire 55B. The first control terminal 23B is electrically connected to the circuit board 46C of the second control board 22A by wire 55C. The second control terminal 24B is electrically connected to the circuit board 46D of the second control board 22A by wire 55D.

[0061] Here, the third metal plate 15A includes a first overlapping region 39A that overlaps with the first metal plate 13A when viewed in the thickness direction of the first metal plate 13A (see Figure 7 in particular). The area of ​​the first overlapping region 39A is 25 mm². 2 That concludes the explanation. Furthermore, the third metal plate 15A includes a second overlapping region 39B that overlaps with the second metal plate 14A when viewed in the thickness direction of the first metal plate 13A.

[0062] Next, the current flow during the operation of the semiconductor device 11A will be briefly explained. When the first semiconductor chip 16A and the first semiconductor chip 16B are turned ON by control by the gate terminal, which is the first control terminal 23A, current flows from the first terminal 32A of the first metal plate 13A, which is the P terminal, to the first plate-shaped portion 31A of the first metal plate 13A. Subsequently, current flows from the drain electrodes of the first semiconductor chip 16A and the first semiconductor chip 16B to the source electrodes in the longitudinal direction (opposite to the direction indicated by arrow Z). The current flows from the respective source electrodes of the first semiconductor chip 16A and the first semiconductor chip 16B through the conductive members 18A and 18B, via the second plate-shaped portion 33A of the second metal plate 14A, to the second terminal 34A. Furthermore, the correction of the reference potential by the first control terminal 23A is performed by the second control terminal 24A via the circuit board 46B, which is electrically connected to the source electrodes of the first semiconductor chip 16A and the first semiconductor chip 16B. When the second semiconductor chip 17A and the second semiconductor chip 17B are turned ON by control by the gate terminal, which is the first control terminal 23B, current flows from the second terminal 34A of the second metal plate 14A, which is the O terminal, to the second plate-shaped portion 33A of the second metal plate 14A. Subsequently, current flows from the drain electrodes of the second semiconductor chip 17A and the second semiconductor chip 17B to the source electrodes in the vertical direction (opposite to the direction indicated by arrow Z). Current flows from the source electrodes of the second semiconductor chip 17A and the second semiconductor chip 17B through the connecting portion 44A, the connecting portion 44B, and the strip portion 42A, the strip portion 42B, and the strip portion 42C of the third plate-shaped portion 35A of the third metal plate 15A, and then to the third terminals 36A and 37A.

[0063] Next, an example of a method for manufacturing the semiconductor device 11A having the above configuration will be briefly described. First, a base substrate 12A having the above configuration is prepared. Next, a first metal plate 13A is attached to the first region 29A of the metal layer 28A with a bonding material in between, and a second metal plate 14A is attached to the second region 29B of the metal layer 28A with a bonding material in between. After that, a first semiconductor chip 16A and a first semiconductor chip 16B are attached to the first metal plate 13A, a first semiconductor chip 16A and a first semiconductor chip 16B are attached to the second metal plate 14A with a bonding material in between, and conductive members 18A and 18B are attached to the first semiconductor chip 16A, the first semiconductor chip 16B and the second metal plate 14A.

[0064] Next, the third metal plate 15A is attached to the base substrate 12A. In this case, the central region of the connecting portion 44A is positioned on the second semiconductor chip 17A, and the central region of the connecting portion 44B is positioned on the second semiconductor chip 17B. The boss of the first resin member 25A is also attached so as to be in contact with the first metal plate 13A. Then, the connecting portion 44A and the second semiconductor chip 17A, and the connecting portion 44B and the second semiconductor chip 17B are joined together.

[0065] Subsequently, the first control board 21A and the second control board 22A are placed on the third metal plate 15A. The first control terminals 23A, 23B, 24A, and 24B form a frame connected to the third metal plate 15A and are positioned together with the mounting of the third metal plate 15A. Each part is electrically connected by wires or the like. Connections by wires or the like are made by wire bonding.

[0066] Next, the second resin member 26A is sealed using a transfer mold, and the frame connecting the first control terminal 23A, first control terminal 23B, second control terminal 24A, second control terminal 24B and the third metal plate 15A is cut and removed, separating each terminal. In this way, the semiconductor device 11A of the above-described embodiment 1 is obtained.

[0067] In the semiconductor device 11A with the above configuration, the first metal plate 13A and the second metal plate 14A are arranged adjacent to each other when viewed in the thickness direction of the first metal plate, and the third metal plate 15A includes a first overlapping region 39A that overlaps with the first metal plate 13A. In this first overlapping region 39A, the first metal plate 13A and the third metal plate 15A form a parallel plate. During the operation of the semiconductor device 11A, the direction of the current flowing through the first metal plate 13A and the direction of the current flowing through the third metal plate 15A are opposite, so the inductance due to mutual inductance can be subtracted from the total inductance. Therefore, with such a semiconductor device 11A, it is possible to reduce the inductance.

[0068] In this embodiment, the area of ​​the first overlapping region 39A is 25 mm². 2 That concludes the explanation. Since a typical printed circuit board has a length of 5 mm in the vertical direction and a length of 5 mm in the horizontal direction, this method makes it possible to more reliably place the first control board 21A on the first overlapping region 39A.

[0069] Furthermore, the semiconductor device 11A with the above configuration includes a first metal plate 13A, a first semiconductor chip 16A and a first semiconductor chip 16B disposed on the first metal plate 13A with one side electrically connected to the first metal plate 13A, a second metal plate 14A disposed adjacent to the first metal plate 13A when viewed in the thickness direction of the first metal plate 13A, a second semiconductor chip 17A and a second semiconductor chip 17B disposed on the second metal plate 14A with one side electrically connected to the second metal plate 14A, conductive members 18A and 18B that electrically connect the other side of the first semiconductor chip 16A and the first semiconductor chip 16B to the second metal plate 14A, a third metal plate 15A that is electrically connected to the other side of the second semiconductor chip 17A and the second semiconductor chip 17B, and a first control board 21A that controls the operation of the first semiconductor chip 16A and the first semiconductor chip 16B. The third metal plate 15A includes a first overlapping region 39A that overlaps with the first metal plate 13A when viewed in the thickness direction of the first metal plate 13A. The first control substrate 21A is placed on the third metal plate 15A.

[0070] In the semiconductor device 11A described above, the first metal plate 13A and the third metal plate 15A form a parallel plate in the first overlapping region 39A. During the operation of the semiconductor device 11A, the direction of the current flowing through the first metal plate 13A and the direction of the current flowing through the third metal plate 15A are opposite, so the inductance due to mutual inductance can be subtracted from the total inductance. In addition, the first control board 21A is placed on the third metal plate 15A. During the operation of the semiconductor device 11A, the potential of the third metal plate 15A is lower than that of the first metal plate 13A, which has a relatively high potential, so the reliability of insulation to the first control board 21A can be increased. Therefore, the semiconductor device 11A can be operated stably over a long period of time while reducing inductance.

[0071] In this embodiment, the first control board 21A is placed on the first overlapping region 39A. Therefore, by interposing the third metal plate 15A between the first control board 21A and the first metal plate 13A, the first metal plate 13A and the third metal plate 15A can form parallel plates in close proximity and over a large area. Thus, the inductance can be further reduced.

[0072] Furthermore, the semiconductor device 11A with the above configuration includes a first metal plate 13A, a first semiconductor chip 16A and a first semiconductor chip 16B disposed on the first metal plate 13A with one side electrically connected to the first metal plate 13A, a second metal plate 14A disposed adjacent to the first metal plate 13A when viewed in the thickness direction of the first metal plate 13A, a second semiconductor chip 17A and a second semiconductor chip 17B disposed on the second metal plate 14A with one side electrically connected to the second metal plate 14A, conductive members 18A and 18B that electrically connect the other side of the first semiconductor chip 16A and the first semiconductor chip 16B to the second metal plate 14A, a third metal plate 15A that is electrically connected to the other side of the second semiconductor chip 17A and the second semiconductor chip 17B, and a first control board 21A that controls the operation of the first semiconductor chip 16A and the first semiconductor chip 16B. The third metal plate 15A includes a second overlapping region 39B that overlaps with the second metal plate 14A when viewed in the thickness direction of the first metal plate 13A. The second control substrate 22A is placed on the third metal plate 15A.

[0073] In the semiconductor device 11A described herein, the second metal plate 14A and the third metal plate 15A form a parallel plate in the second overlapping region 39B. During operation of the semiconductor device 11A, the direction of the current flowing through the second metal plate 14A and the direction of the current flowing through the third metal plate 15A are opposite, so the inductance due to mutual inductance can be subtracted from the total inductance. Therefore, such a semiconductor device 11A can reduce inductance. Furthermore, the second control board 22A is placed on the third metal plate 15A. Since the potential of the third metal plate 15A is lower than that of the second metal plate 14A, which is at a relatively high potential, the reliability of insulation to the second control board 22A can be increased. Therefore, it becomes easier to operate the semiconductor device 11A stably over a long period of time.

[0074] In this embodiment, the second control board 22A is placed on the second overlapping region 39B. Therefore, by interposing the third metal plate 15A between the second control board 22A and the second metal plate 14A, the second metal plate 14A and the third metal plate 15A can form parallel plates in close proximity and over a large area. Consequently, the inductance can be further reduced.

[0075] In this embodiment, the third metal plate 15A is directly bonded to the second semiconductor chip 17A and the second semiconductor chip 17B. Therefore, compared to electrical connections using wires or the like, it becomes easier to pass large currents and reduce inductance.

[0076] In this embodiment, the second control board 22A is attached to the third metal plate 15A by one of the following methods: bending a portion of the third metal plate 15A toward the second control board 22A (bent portion 61A), crimping using positioning pins, fixing with adhesive, or fixing using press-fit nuts 66A and bolts 67A. Therefore, the second control board 22A can be reliably attached to the third metal plate 15A in the correct position. Consequently, the risk of the second control board 22A being attached in a misaligned position can be reduced.

[0077] In this embodiment, the first resin member 25A is attached to the third metal plate 15A so as to cover a portion of the third metal plate 15A and includes a portion located between the first metal plate 13A and the third metal plate 15A. Therefore, by interposing the first resin member 25A between the first metal plate 13A and the third metal plate 15A, the risk of contact between the first metal plate 13A and the third metal plate 15A can be further reduced. In addition, the portion of the third metal plate 15A covered by the first resin member 25A can avoid contact with other metal members. Therefore, the semiconductor device 11A can be operated more reliably and safely.

[0078] In this embodiment, the first control board 21A is attached to the third metal plate 15A by either fixing it to the first resin member 25A using adhesive or fixing it by cutting away a part of the first resin member 25A. Therefore, the first control board 21A can be accurately attached to the third metal plate 15A using the first resin member 25A. Consequently, the risk of the first control board 21A being misaligned during installation can be reduced.

[0079] In this embodiment, the first resin member 25A is provided with columnar bosses 51, 51B, 51C, and 51D that protrude in the direction in which the first metal plate 13A is located. Therefore, the gap between the first metal plate 13A and the third metal plate 15A can be easily adjusted by the length of the bosses 51, 51B, 51C, and 51D. By adjusting the length of the bosses 51, 51B, 51C, and 51D considering the viscosity of the molten sealing resin, it is possible to easily allow the molten sealing resin to flow into the gap between the first metal plate 13A and the third metal plate 15A. Thus, high insulation performance can be reliably achieved. Furthermore, the orientation of the third metal plate 15A can be controlled by the bosses 51, 51B, 51C, and 51D. In particular, a cantilever state can be avoided when the third metal plate 15A is connected to the other side of the second semiconductor chip 17A and the second semiconductor chip 17B. Therefore, stable retention of the third metal plate 15A becomes possible.

[0080] In this embodiment, the tips of bosses 51A, 51B, 51C, and 51D are in contact with the first metal plate 13A. Therefore, the position of the third metal plate 15A can be more stabilized by bosses A, 51B, 51C, and 51D. Consequently, more stable holding of the third metal plate 15A becomes possible.

[0081] In this embodiment, the third metal plate 15A is provided with openings 41A, 41B, 41C, and 41D that penetrate in the thickness direction. Viewed in the thickness direction of the third metal plate 15A, the first semiconductor chip 16A, the first semiconductor chip 16B and the second semiconductor chip 17A, the second semiconductor chip 17B are arranged within the openings 41A, 41B, 41C, and 41D. Therefore, when molten sealing resin is poured in to seal, trapped air does not remain under the third metal plate 15A, but can easily escape to the upper side of the third metal plate 15A through the openings 41A, 41B, 41C, and 41D. Furthermore, even after the third metal plate 15A is attached, when electrically connecting electrodes provided on the other side of the first semiconductor chip 16A, the first semiconductor chip 16B, or electrodes provided on the other side of the second semiconductor chip 17A, the second semiconductor chip 17B, to other metal members using wires, wire bonding can be performed by utilizing the openings. Therefore, productivity can be improved.

[0082] (Other embodiments) In the above embodiment, the first control board may be attached to the third metal plate by one of the following methods: bending a portion of the third metal plate toward the first control board, crimping using positioning pins, fixing with adhesive, or fixing with press-fit nuts and bolts. By doing so, the first control board can be reliably attached to the third metal plate in the correct position. Therefore, the risk of the first control board being attached in a misaligned position can be reduced.

[0083] Furthermore, in the above embodiment, the second control board may be attached to the third metal plate by one of the following means: a snap-fit ​​portion provided on the first resin member that protrudes in the thickness direction and is elastically deformable; a protruding pin that causes a part of the first resin member to protrude toward the second control board; a fitting recess that causes a part of the first resin member to be recessed along the outer shape of the second control board; fixing to the first resin member using adhesive; or fixing by cutting away a part of the first resin member using tapping screws. In this way, the second control board can be attached to the third metal plate with high precision using the first resin member. Therefore, the risk of the second control board being attached in a misaligned position can be reduced.

[0084] In the above embodiment, the first and second semiconductor chips included in the semiconductor device are not limited to MOSFETs, but may also be, for example, insulated gate bipolar transistors (IGBTs). In this case, this can be handled by replacing the "source" with the "emitter" and the "drain" with the "collector".

[0085] The embodiments disclosed herein should be understood to be illustrative in all respects and not restrictive in any way. The scope of the present invention is defined not by the foregoing description but by the claims, and all modifications within the meaning and scope equivalent to the claims are intended to be included. [Explanation of symbols]

[0086] 11A Semiconductor Equipment 12A base board 13A 1st metal plate 14A 2nd metal plate 15A 3rd metal plate 16A, 16B First Semiconductor Chip 17A, 17B Second Semiconductor Chip 18A, 18B Conductive members 19A Parting line 21A First control board 22A Second control board 23A, 23B First control terminal 24A, 24B Second control terminal 25A First resin component 26A Second resin component 27A Insulating board 28A,28B Metal layer 29A 1st area 29B 2nd area 31A First plate-like part 32A 1st terminal 33A Second plate-like part 34A 2nd terminal 35A Third plate-like part 36A,37A 3rd terminal 38A Stepped section 39A 1st overlap area 39B 2nd overlap area 41A, 41B, 41C, 41D opening 42A, 42B, 42C Strip-shaped section 43A, 43B, 43C Aperture section 44A,44B connection part 46A, 46B, 46C, 46D Circuit Board 47A,47B Support plate 48A, 48B, 48C, 48D, 49A, 49B, 49C, 49D, 55A, 55B, 55C, 55D wire 51A, 51B, 51C, 51D Boss 52A Bottom 52B Top surface 53A Mating recess 54A Snap-fit ​​section 56A Protruding Pin 57A, 62A, 64A, 65A, 68A, 69A Through hole 58A Tapping Screw 61A Folded section 63A Press-fit pin 66A Press-fit nut 67A Bolt

Claims

1. First metal plate and A first semiconductor chip is disposed on the first metal plate, with one side of which is electrically connected to the first metal plate, A second metal plate is arranged adjacent to the first metal plate when viewed in the thickness direction of the first metal plate, A second semiconductor chip is disposed on the second metal plate, with one side of which is electrically connected to the second metal plate, A conductive member that electrically connects the other surface of the first semiconductor chip and the second metal plate, The second semiconductor chip comprises a third metal plate electrically connected to the other side of the second semiconductor chip, A semiconductor device wherein the third metal plate includes a first overlapping region that overlaps with the first metal plate when viewed in the thickness direction of the first metal plate.

2. The area of ​​the first overlapping region is 25 mm². ２ The semiconductor device according to claim 1.

3. First metal plate and A first semiconductor chip is disposed on the first metal plate, with one side of which is electrically connected to the first metal plate, A second metal plate is arranged adjacent to the first metal plate when viewed in the thickness direction of the first metal plate, A second semiconductor chip is disposed on the second metal plate, with one side of which is electrically connected to the second metal plate, A conductive member that electrically connects the other surface of the first semiconductor chip and the second metal plate, A third metal plate electrically connected to the other side of the second semiconductor chip, The system comprises a first control board for controlling the operation of the first semiconductor chip, The third metal plate includes a first overlapping region that overlaps with the first metal plate when viewed in the thickness direction of the first metal plate, The first control board is a semiconductor device disposed on the third metal plate.

4. The semiconductor device according to claim 3, wherein the first control board is arranged on the first overlapping region.

5. First metal plate and A first semiconductor chip is disposed on the first metal plate, with one side of which is electrically connected to the first metal plate, A second metal plate is arranged adjacent to the first metal plate when viewed in the thickness direction of the first metal plate, A second semiconductor chip is disposed on the second metal plate, with one side of which is electrically connected to the second metal plate, A conductive member that electrically connects the other surface of the first semiconductor chip and the second metal plate, A third metal plate electrically connected to the other side of the second semiconductor chip, The system comprises a second control board for controlling the operation of the second semiconductor chip, The third metal plate includes a second overlapping region that overlaps with the second metal plate when viewed in the thickness direction of the first metal plate, The second control board is a semiconductor device disposed on the third metal plate.

6. The semiconductor device according to claim 5, wherein the second control board is disposed on the second overlapping region.

7. The semiconductor device according to claim 1 or claim 3, wherein the third metal plate is directly bonded to the second semiconductor chip.

8. The semiconductor device according to claim 3 or 4, wherein the first control board is attached to the third metal plate by one of the following methods: bending a portion of the third metal plate toward the first control board, crimping using positioning pins, fixing using adhesive, or fixing using press-fit nuts and bolts.

9. The semiconductor device according to claim 5 or 6, wherein the second control board is attached to the third metal plate by one of the following: a bent portion formed by bending a part of the third metal plate toward the second control board, crimping using positioning pins, fixing using adhesive, or fixing using press nuts and bolts.

10. The semiconductor device according to claim 1 or claim 3, further comprising a first resin member attached to the third metal plate so as to cover a portion of the third metal plate, and including a portion located between the first metal plate and the third metal plate.

11. The present invention further comprises a first resin member attached to the third metal plate so as to cover a portion of the third metal plate, and including a portion located between the first metal plate and the third metal plate, The semiconductor device according to claim 3 or claim 4, wherein the first control board is attached to the third metal plate by either fixing to the first resin member using an adhesive or fixing by cutting away a part of the first resin member using tapping screws.

12. The present invention further comprises a first resin member attached to the third metal plate so as to cover a portion of the third metal plate, and including a portion located between the first metal plate and the third metal plate, The semiconductor device according to claim 5 or 6, wherein the second control board is provided on the first resin member and is attached to the third metal plate by a snap-fit ​​portion that protrudes in the thickness direction and is elastically deformable, a protruding pin that causes a part of the first resin member to protrude toward the second control board, a fitting recess that causes a part of the first resin member to be recessed in accordance with the outer shape of the second control board, or by fixing to the first resin member using an adhesive or fixing by cutting away a part of the first resin member using tapping screws.

13. The present invention further comprises a first resin member attached to the third metal plate so as to cover a portion of the third metal plate, and including a portion located between the first metal plate and the third metal plate, The semiconductor device according to claim 1 or claim 3, wherein the first resin member is provided with a columnar boss that protrudes in the direction in which the first metal plate is located.

14. The semiconductor device according to claim 13, wherein the tip of the boss is in contact with the first metal plate.

15. The third metal plate is provided with an opening that penetrates in the thickness direction, The semiconductor device according to claim 1 or claim 3, wherein, viewed in the thickness direction of the third metal plate, at least one of the first semiconductor chip and the second semiconductor chip is arranged within the opening.

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