Apparatus for measurement and inspection of material layers containing three-dimensional nanostructures, method for manufacturing semiconductor devices using the same, and measurement and inspection method.

Abstract

The present invention provides an apparatus for measurement and inspection of material layers containing three-dimensional nanostructures, a method for manufacturing a semiconductor device using the same, and a measurement and inspection method. [Solution] An apparatus for measurement and inspection of a material layer containing a three-dimensional nanostructure, a method for manufacturing a semiconductor device using the same, and a measurement and inspection method are disclosed. One embodiment of the measurement and inspection apparatus includes a first ultrasonic transducer that emits ultrasonic waves to a measurement and inspection target, and a substrate holder that is separated from the first ultrasonic transducer and includes a surface facing the first ultrasonic transducer, wherein the first ultrasonic transducer and the substrate holder are in a gas atmosphere with a pressure higher than atmospheric pressure.

Description

Technical Field

[0001] The present disclosure relates to a measurement inspection apparatus, and more particularly, to an apparatus for measuring and inspecting a material layer including a three-dimensional nanostructure, a method for manufacturing a semiconductor device using the same, and a measurement inspection method.

Background Art

[0002] Three-dimensional nanostructures including air channels such as vertical through-holes and horizontally formed slits can be formed in a one-dimensional (1D) array or a two-dimensional (2D) array when manufacturing three-dimensional (3D) DRAM, memory cells of VNAND, high bandwidth memory (HBM), and a stair-free contact structure.

[0003] Measurement of the interface morphology of three-dimensional nanostructures having a high aspect ratio and detection of defects (e.g., voids, unetched portions, bridges, etc.) at each manufacturing stage are important.

[0004] For such measurement and defect detection, techniques utilizing ultrasonic waves can be used. For example, a technique is known in which a measurement inspection is performed while an ultrasonic transducer and a semiconductor chip to be measured are carried in a liquid.

Summary of the Invention

Problems to be Solved by the Invention

[0005] An exemplary embodiment provides a measurement inspection apparatus capable of increasing the intensity of a measurement inspection signal.

[0006] An exemplary embodiment provides a measurement inspection apparatus capable of improving the resolution of an image obtained by measurement inspection.

[0007] One exemplary embodiment provides a method for manufacturing a semiconductor device using such a measurement and inspection device.

[0008] One exemplary embodiment provides a measurement and inspection method using such a measurement and inspection device. [Means for solving the problem]

[0009] An exemplary measurement and inspection apparatus includes a first ultrasonic transducer that emits ultrasonic waves to a measurement and inspection object, and a substrate holder that is separated from the first ultrasonic transducer and includes a surface facing the first ultrasonic transducer. The first ultrasonic transducer and the substrate holder are in a high-pressure gas atmosphere higher than atmospheric pressure.

[0010] In one example, the first ultrasonic transducer and the substrate holder may be provided within the chamber of the high-pressure gas atmosphere.

[0011] In one example, the substrate holder may be provided within the chamber of the high-pressure gas atmosphere, and the first ultrasonic transducer may be provided such that its ultrasonic emission surface is exposed to the high-pressure gas atmosphere within the chamber.

[0012] In one example, the system may further include second and third ultrasonic transducers configured to receive ultrasonic waves reflected from the object being measured and inspected.

[0013] In one example, multiple first ultrasonic transducers may be provided.

[0014] In one example, the plurality of first ultrasonic transducers may be aligned to form a one-dimensional or two-dimensional transducer array. In one example, the substrate holder may include a plurality of regions on which a substrate is loaded, and the plurality of first ultrasonic transducers may be arranged to correspond one-to-one with the plurality of regions.

[0015] In one example, the measurement and inspection device may further include a high-pressure gas supply source provided to supply high-pressure gas to the chamber in order to maintain the pressure inside the chamber at a pressure higher than atmospheric pressure. In one example, the measurement and inspection device may further include a discharge device for discharging the gas supplied to the chamber to the outside of the chamber. In one example, the measurement and inspection device may further include a temperature control unit for maintaining the internal temperature of the chamber at a set temperature while the measurement and inspection of the object to be measured and inspected is being carried out.

[0016] In one example, the high-pressure gas atmosphere may include nitrogen (N2), oxygen (O2), hydrogen (H2), or a mixture thereof.

[0017] In one example, the first ultrasonic transducer may be embedded in the wall of the chamber facing the substrate holder.

[0018] In one example, the system further includes second and third ultrasonic transducers configured to receive ultrasonic waves reflected from the object to be measured and inspected, the second and third ultrasonic transducers may be configured to be embedded in the wall of the chamber.

[0019] In one example, the first to third ultrasonic transducers are all mounted at the same height, and some of the first to third ultrasonic transducers may include a member that alters the path of the emitted or received ultrasonic waves.

[0020] A method for manufacturing a semiconductor device according to an exemplary embodiment is: The process includes the steps of forming a material layer containing a three-dimensional nanostructure on a substrate, loading the substrate on which the material layer is formed into an ultrasonic measurement and inspection device, performing a measurement and inspection on the material layer, unloading the substrate from the measurement and inspection device after the measurement and inspection, and performing a subsequent process on the material layer. The aforementioned measuring and inspection device, A first ultrasonic transducer that emits ultrasonic waves to the material layer, and a substrate holder that faces the first ultrasonic transducer and includes a region where the substrate is loaded, wherein the first ultrasonic transducer and the substrate holder are in a high-pressure gas atmosphere higher than atmospheric pressure.

[0021] In one example, the step of forming the material layer may include: forming a plurality of patterns on the substrate, forming an interlayer insulating layer covering the plurality of patterns, and removing a part of the interlayer insulating layer to expose a part of the three-dimensional nanostructure.

[0022] In one example, the step of performing the measurement and inspection may include: tuning the carrier frequency of the ultrasonic wave irradiated to the material layer, and tuning the distance between the first ultrasonic transducer and the material layer.

[0023] A measurement and inspection method according to an exemplary embodiment includes: irradiating the measurement and inspection target with ultrasonic waves, and receiving the ultrasonic waves reflected from the measurement and inspection target, wherein the steps of irradiating the ultrasonic waves and receiving the ultrasonic waves are performed in a high-pressure gas atmosphere higher than atmospheric pressure.

[0024] In one example, the process of irradiating the ultrasonic waves may include: tuning the carrier frequency of the irradiated ultrasonic wave, and tuning the distance between the emission surface of the irradiated ultrasonic wave and the measurement and inspection target.

[0025] In one example, the step of irradiating the ultrasonic waves includes irradiating ultrasonic pulses, and the step of irradiating the ultrasonic pulses may include varying the width of the ultrasonic pulses according to the measurement purpose.

[0026] In one example, the step of irradiating the ultrasonic pulse includes a step of irradiating a first ultrasonic pulse to the measurement inspection target for the measurement inspection of the horizontal structure of the measurement inspection target, and a step of irradiating a second ultrasonic pulse to the measurement inspection target for the measurement inspection of the vertical structure of the measurement inspection target, and the form of the first ultrasonic pulse may be different from the form of the second ultrasonic pulse.

Advantages of the Invention

[0027] The disclosed measurement inspection apparatus includes a substrate holder on which a measurement inspection target (for example, a material layer including a three-dimensional structure air channel) is loaded, and a transducer that emits ultrasonic waves to the measurement inspection target. The substrate holder and the ultrasonic transducer are arranged in a high-pressure gas atmosphere higher than the atmospheric pressure. Therefore, when using the disclosed measurement inspection apparatus, since the measurement inspection is performed in a high-pressure gas atmosphere, the thermoviscous resistance can be reduced in the process of the ultrasonic wave traveling along the air channel of the measurement inspection target. Thereby, the attenuation of the ultrasonic wave traveling along the air channel can be reduced, so that the signal of the ultrasonic wave reflected from the measurement inspection apparatus becomes higher, and by using ultrasonic waves with different pulse forms in the horizontal measurement and the vertical measurement, the horizontal and vertical resolutions of the measurement inspection for the measurement inspection target can also be improved.

[0028] Also, since the attenuation of the ultrasonic wave can be reduced as described above, the intensity of the ultrasonic wave emitted from the ultrasonic transducer can be made lower than that of the conventional one, and thereby, the operating power of the ultrasonic transducer can also be reduced.

Brief Description of the Drawings

[0029] [Figure 1] It is a cross-sectional view showing an ultrasonic measurement system for measurement inspection of a material layer including a three-dimensional nanostructure according to an exemplary embodiment. [Figure 2] FIG. 2 is a plan view of FIG. 1. [Figure 3]Figure 2 is a plan view illustrating the case where the planar shape of the ultrasonic transducer is circular. [Figure 4] This is a plan view illustrating a case where the arrangement of the ultrasonic transducer, gas inlet, and gas outlet differs from that shown in Figures 1 to 3. [Figure 5] This is a plan view of the substrate holder shown in Figure 1. [Figure 6] This is a plan view showing the arrangement of the ultrasonic transducer, gas inlet, and gas outlet when the substrate holder in Figure 1 includes the configuration illustrated in Figure 5. [Figure 7] Figure 6 is a cross-sectional view taken in the direction of 7-7'. [Figure 8] This is a plan view showing the case where the substrate holder in Figure 1 includes the first to fourth regions illustrated in Figure 5, and the first to fourth ultrasonic transducers are provided corresponding to the first to fourth regions. [Figure 9] Figure 8 is a cross-sectional view taken in the direction of 9-9'. [Figure 10] Figure 1 is a plan view showing a case where an ultrasonic transducer array is provided instead of an ultrasonic transducer. [Figure 11] Figure 10 is a cross-sectional view taken in the direction of 11-11'. [Figure 12] Figure 10 is a plan view showing the case where a two-dimensional ultrasonic transducer array is provided instead of a one-dimensional ultrasonic transducer array. [Figure 13] Figure 1 shows various examples of the first region, and is a cross-sectional view illustrating various arrangements (configurations) of ultrasonic transducers. [Figure 14] Figure 1 shows various examples of the first region, and is a cross-sectional view illustrating various examples of the arrangement (shape) of ultrasonic transducers. [Figure 15] Figure 1 shows various examples of the first region, and is a cross-sectional view illustrating various examples of the arrangement (shape) of ultrasonic transducers. [Figure 16]Figure 1 shows various examples of the first region, and is a cross-sectional view illustrating various examples of the arrangement (shape) of ultrasonic transducers. [Figure 17] This is a cross-sectional view showing an ultrasonic measurement system for three-dimensional nanostructure measurement and inspection including a high aspect ratio pattern according to an exemplary embodiment. [Figure 18A] Figure 17 is a cross-sectional view illustrating an example of the configuration of a transducer group. [Figure 18B] Figure 18A is a cross-sectional view showing a case where an ultrasonic path changing member is provided between the transducer and the material layer being measured and inspected. [Figure 18C] This is a cross-sectional view showing a case where the transducers of a transducer group are arranged as shown in Figure 17, and an ultrasonic path changing member is provided between the transducers and the material layer to be measured and inspected. [Figure 19] This is a cross-sectional view showing an ultrasonic measurement system for three-dimensional nanostructure measurement and inspection including a high aspect ratio pattern according to an exemplary embodiment. [Figure 20] This is a cross-sectional view showing an ultrasonic measurement system for three-dimensional nanostructure measurement and inspection including a high aspect ratio pattern according to an exemplary embodiment. [Figure 21] This cross-sectional view exemplifies a pattern with a high aspect ratio contained in a material layer that is the subject of measurement and inspection. It shows multiple holes, or multiple air channels, formed in the material layer as an example of a pattern with a three-dimensional nanostructure. [Figure 22] This is a plan view of Figure 21. [Figure 23] This is a plan view showing a case where the unit alignment configuration, including the element region and through-holes, differs from that shown in Figure 22. [Figure 24] This is a perspective view showing an example of a high-aspect-ratio three-dimensional nanostructure contained in a material layer that is the subject of measurement and inspection. [Figure 25] Figure 24 is a perspective view illustrating the irregularities on the side surface of the element region. [Figure 26]This is a plan view showing an example of a material layer that is subject to measurement and inspection. [Figure 27] This is a flowchart illustrating, step by step, a method for manufacturing a semiconductor device using an ultrasonic measurement and inspection system according to an exemplary embodiment. [Modes for carrying out the invention]

[0030] Hereinafter, an apparatus for measurement and inspection of a material layer containing a three-dimensional nanostructure according to an exemplary embodiment, a method for manufacturing a semiconductor device using the same, and a measurement and inspection method will be described in detail with reference to the accompanying drawings. The thickness of the layers or regions shown in the drawings in this process may be shown somewhat exaggerated for the sake of clarity in the specification.

[0031] The embodiments described below are merely illustrative, and various modifications are possible from these embodiments. Furthermore, in the layered structures described below, the terms "upper" or "above" can include not only elements that are in contact and directly above, but also elements that are not in contact and above. In the following description, the same reference numeral in each figure indicates the same component.

[0032] A singular expression includes multiple expressions unless the context clearly indicates otherwise. Furthermore, when we say that a part "contains" a component, this means that it may contain other components, rather than excluding them, unless otherwise stated.

[0033] The use of the term "the foregoing" and similar referential terms may correspond to both singular and plural. Unless the steps constituting the method are clearly described in order or to the contrary, the steps may be performed in any order. The order in which the steps are described is not necessarily limited.

[0034] Furthermore, terms such as "...part" and "module" as used herein mean a unit that processes at least one function or operation, which may be embodied in hardware or software, or in a combination of hardware and software.

[0035] The lines or connecting members between components shown in the drawings exemplify functional and / or physical or circuit connections and may be replaced or added in actual devices as various functional, physical, or circuit connections.

[0036] All use of examples or illustrative terms is solely for the purpose of detailing the technical idea and is not limited in scope by the examples or illustrative terms herein, unless otherwise defined by the claims.

[0037] Figure 1 is a cross-sectional view showing an ultrasonic measurement system (hereinafter referred to as the first measurement system) 100 for measurement and inspection of a material layer containing a three-dimensional nanostructure, according to an exemplary embodiment. The first measurement system 100 can be described as a device for measurement and inspection. Other measurement systems described later can be described in a similar manner.

[0038] Referring to Figure 1, the first measuring system 100 includes a first chamber 110. The first chamber 110 includes a side wall 110A and a top plate 110B having a predetermined thickness. The top plate 110B and the side wall 110A may be a single unit connected together, or they may be fastened or joined to each other via fastening devices or fastening means. In one example, the top plate 110B may be fastened to the side wall 110A in a structure that can be opened and closed like a lid or cover. The pressure inside 115 of the first chamber 110 may be greater than atmospheric pressure. In one example, the pressure inside 115 of the first chamber 110 may be higher than atmospheric pressure (1 atm) and may be, but not limited to, 20 atm or less, 3 to 30 atm, 5 to 25 atm, 7 to 20 atm, or 9 to 15 atm. The case of the first chamber 110, including the top plate 110B, the side walls 110A, and the bottom plate, may be designed to maintain airtightness while adequately withstanding the high pressure inside the first chamber 115 as described above. The case of the first chamber 110 may also be referred to as a housing.

[0039] The first chamber 110 includes, but is not limited to, a chuck 120 inside 115 and a substrate holder 130 provided on the chuck 120, and other elements may be further provided inside 115. The chuck 120 is provided at the bottom of the first chamber 110. The chuck 120 may be a support or base for supporting the substrate holder 130. In one example, the chuck 120 may be fixed to the bottom of the first chamber 110. In one example, the chuck 120 may include a drive device (e.g., a motor) that causes rotational and / or linear reciprocating motion relative to the substrate holder 130. The substrate holder 130 may be provided at the upper end of the chuck 120. If the upper end of the chuck 120 includes an upper surface, the substrate holder 130 may be provided so as to cover part or all of the upper surface. The substrate holder 130 may be provided fixed to the chuck 120, or it may be provided to allow rotational or linear reciprocating motion. The substrate holder 130 may include holding means for securely holding the substrate 140 loaded on its upper surface. The holding means can fix the substrate 140 loaded on the substrate holder 130 to the substrate holder 130, and can fix it to the substrate holder 130 without shaking during the rotational motion or linear reciprocating motion of the substrate holder 130. The substrate 140 includes, but is not limited to, a semiconductor substrate. In one example, the substrate 140 may include a non-semiconductor substrate. The material layer 150 is the object of measurement and inspection using ultrasound and may include three-dimensional nanostructures. In one example, the three-dimensional nanostructures may include semiconductor elements, optical elements, high aspect ratio elements, and high aspect ratio patterns. In one example, the material layer 150 includes a layered structure in which multiple layers are stacked, and each of the multiple layers includes, but is not limited to, three-dimensional nanostructures such as semiconductor elements, optical elements, memory elements, etc. In one example, a high aspect ratio pattern may include vertical through holes and / or horizontally formed slits or trenches, which will be discussed later. The first material layer 150 may have a first thickness L1.

[0040] A temperature control unit 160 may be provided inside the first chamber 110 to regulate the temperature inside the first chamber 115. The temperature control unit 160 may be provided on the side wall 110A of the first chamber 110, or elsewhere. For example, the temperature control unit 160 may be provided on the outer surface of the chuck 120. For example, the temperature control unit 160 may be provided below the top plate 110B. In another example, the temperature control unit 160 may be provided at a suitable location inside or outside the first chamber 110. In one example, the first measurement system 100 may further include a second temperature control unit in addition to the temperature control unit 160. That is, the first measurement system 100 may include two or more temperature control units. The temperature control unit 160 may include sensors for sensing the temperature inside the first chamber 115 and changes in temperature. The temperature control unit 160 may also include a device (e.g., a heater) for raising the temperature inside 115, and a circuit for controlling the operation of the sensors and the device. In one example, the circuit section of the temperature control unit 160 may be located outside the first chamber 110.

[0041] By providing a temperature control unit 160, the temperature inside 115 of the first chamber 110 can be maintained at a set temperature while measurement and inspection of the material layer 150 is being performed, but it can be maintained at, for example, 400°C or below, and is not limited to that.

[0042] The operation of the temperature control unit 160 can be controlled based on the pressure inside the first chamber 115. In one example, the temperature control unit 160 can operate in conjunction with changes in the pressure inside the first chamber 115. For this purpose, a pressure sensor 163 may be provided inside the first chamber 110 to sense changes in the pressure inside the first chamber 115.

[0043] A window 195 for loading the substrate 140 is provided in the side wall 110A of the first chamber 110. The window 195 is closed while measurement and inspection of the material layer 150 is being performed.

[0044] The upper plate 110B of the first chamber 110 is provided with an ultrasonic transducer 170, a gas inlet 180, and a gas outlet 190, and other elements may be further provided on the upper plate 110B.

[0045] The ultrasonic transducer 170 may be configured to emit ultrasonic SW1 for measurement and inspection of the material layer 150 and to receive ultrasonic SW2 reflected by the material layer 150. The frequency of the emitted ultrasonic SW1 may be 10 MHz to 5 GHz, and is not limited to this range. The reflected ultrasonic SW2 may include a component reflected from the upper surface of the material layer 150 and a component reflected from within the material layer 150. The component reflected from within the material layer 150 may include ultrasonic waves reflected from various patterns formed on the material layer 150. These various patterns may include, but are not limited to, semiconductor elements, optical elements, memory elements, wiring, holes, trenches, slits, etc. These various patterns may include patterns with a size expressed in nanometers (nm) units, i.e., patterns with nanoscale or nanostructures. In one example, these various patterns may include patterns with three-dimensional nanostructures. In one example, at least one of the following may have a three-dimensional nanostructure: a semiconductor element, an optical element, a memory element, wiring, a hole, a trench, or a slit. In one example, the material layer 150 includes a plurality of the holes, trenches, or slits, and the plurality of holes, trenches, or slits may be formed at a predetermined pitch. In one example, the plurality of holes may form a hole array, and the planar shape of the hole array may be a hexagonal or square grid. The cross-section of each hole may be circular or elliptical. In a plurality of holes, the diameter of each hole may be the same as the other, but may differ depending on the position of each hole. Also, the diameter of each hole may differ depending on the depth of the hole. Also, the depth of each hole may differ depending on the position of each hole.

[0046] In one example, elements can be placed between holes, trenches, or slits. The holes, trenches, or slits may be areas where vertical or horizontal wiring for connecting elements is formed.

[0047] The ultrasonic transducer 170 may be provided in a form in which at least a portion is embedded in the upper plate 110B. The height of the surface of the ultrasonic transducer 170 from which the ultrasonic SW1 is emitted, that is, the surface of the ultrasonic transducer 170 that directly faces the material layer 150, may be lower than the upper surface of the upper plate 110B. The ultrasonic transducer 170 may be provided on the upper part of the material layer 150. The distance D1 between the ultrasonic transducer 170 and the material layer 150 may be greater than the thickness L1 of the material layer 150. For example, the distance D1 may be a distance that minimizes or prevents crosstalk between the ultrasonic SW1 irradiated onto the material layer 150 and the ultrasonic SW2 reflected from inside the material layer 150. For example, the distance D1 may be a distance that minimizes or prevents cancellation between the ultrasonic SW1 and the ultrasonic SW2. In one example, the distance D1 is approximately 10 times the thickness L1 of the material layer 150, but is not limited thereto. The distance D1 can be adjusted to improve the resolution and / or accuracy of the ultrasonic measurement inspection. In one example, the ultrasonic transducer 170 may include a receiver for receiving ultrasonic waves SW2 reflected from the material layer 150.

[0048] In one example, the ultrasonic transducer 170 may be configured to move in a first direction and in a second direction perpendicular to the first direction for measurement and inspection of the material layer 150. A drive mechanism (e.g., a motor) for such movement of the ultrasonic transducer 170 may be provided on the top plate 110B or on another part of the first chamber 110. Thus, the measurement and inspection of the material layer 150 may be performed by moving the substrate 140 or by moving the ultrasonic transducer 170.

[0049] The gas inlet 180 may be an inlet passage for gas supplied to the interior 115 of the first chamber 110 for measurement and inspection of the material layer 150. The gas inlet 180 is connected to a high-pressure gas supply source 198 located outside the first chamber 110. While measurement and inspection of the material layer 150 is being performed, high-pressure gas supplied from the high-pressure gas supply source 198 can be supplied to the interior 115 of the first chamber 110 via the gas inlet 180. Thus, the pressure inside the interior 115 of the first chamber 110 can be adjusted by adjusting the amount of gas supplied to the first chamber 110 from the high-pressure gas supply source 198. A pressure regulating valve 185 may be provided separately in the gas supply path between the high-pressure gas supply source 198 and the gas inlet 180 to adjust the pressure of the gas supplied to the first chamber 110. Alternatively, the pressure regulating valve 185 may not be provided separately and may be located inside the high-pressure gas supply source 198. Using the gas supplied from the high-pressure gas source 198, the pressure inside the first chamber 110 115 can be increased to several tens of atmospheric pressures (atm). In one example, such a pressure increase can be carried out adiabatic.

[0050] The gas flowing in through the gas inlet 180 may include nitrogen (N2), oxygen (O2), hydrogen (H2), or a mixture thereof. The gas inlet 180 may be located between the ultrasonic transducer 170 and the side wall 110A, but is not limited to that location. For example, the gas inlet 180 may be located between the substrate holder 1130 and the side wall 110A.

[0051] The gas outlet 190 is a passage through which the gas that has flowed in via the gas inlet 180 is discharged. That is, after the measurement inspection of the material layer 150 is completed, the gas that has flowed into the first chamber 110 can be discharged to the outside of the first chamber 110 via the gas outlet 190. At this time, the operation of the high-pressure gas supply source 198 can be stopped or the pressure regulating valve 185 can be closed.

[0052] The gas outlet 190 may be connected to a gas treatment device 205 located outside the first chamber 110. The gas inside the first chamber 115 can be discharged to the outside of the first chamber 110 via the gas outlet 190 and the gas treatment device 205. An exhaust pump 207 may be provided between the gas outlet 190 and the gas treatment device 205. The gas treatment device 205 can be described as an exhaust device or a discharge device.

[0053] The gas outlet 190 is connected to a gas treatment device located on the outer wall of the first chamber 110 or at a location separate from the first chamber 110, and can be controlled in that connected state. The gas outlet 190 may be located between the gas inlet 180 and the ultrasonic transducer 170, or at other locations. For example, as shown by the dashed line, the gas outlet 190 may be located to the right of the ultrasonic transducer 170. The placement and configuration of the gas inlet 180, gas outlet 190, and ultrasonic transducer 170 can be varied in various ways. Figures 2 to 6 show examples of this.

[0054] Figure 2 is a plan view of Figure 1. For illustrative purposes, the high-pressure gas supply source 198, pressure regulating valve 185, and gas treatment device 205 are omitted.

[0055] Referring to Figure 2, the planar shape of the first chamber 110 may be circular or nearly circular, or it may be non-circular (for example, square). The planar shape of the ultrasonic transducer 170 may be square, or it may be circular, as illustrated in Figure 3. Both the gas inlet 180 and the gas outlet 190 may be located between the wall of the first chamber 110 and the ultrasonic transducer 170. In one example, the gas inlet 180 and the gas outlet 190 may be located on the left, right, top, or bottom of the ultrasonic transducer 170, as shown by the dashed lines.

[0056] Figure 4 is an example of a plan view of Figure 1, illustrating a case where the arrangement of the ultrasonic transducer 170, gas inlet 180, and gas outlet 190 differs from that shown in Figures 1 to 3.

[0057] Referring to Figure 4, the gas inlet 180 and gas outlet 190 may be located in the center of the first chamber 110, and the ultrasonic transducer 170 may be positioned between the gas inlet 180 and the wall of the first chamber 110. In such a configuration, the ultrasonic transducer 170 may be located to the left, right, above, or below the gas inlet 180 and gas outlet 190, as shown by the dashed lines. In other words, the ultrasonic transducer 170 may be positioned at any one of the locations around the gas inlet 180 and gas outlet 190.

[0058] In Figures 2 to 4, the gas inlet 180 and the gas outlet 190 are located adjacent to each other, but this is not the only option. For example, the gas inlet 180 and the gas outlet 190 may be spaced further apart than the distance between them.

[0059] Figure 5 shows an example of a plan view of the substrate holder 130 shown in Figure 1.

[0060] Referring to Figure 5, the planar shape of the substrate holder 130 may be circular or nearly circular, or it may be square. The substrate holder 130 includes first to fourth regions 13A to 13D on which a substrate can be loaded. The planar shape of each region 13A to 13D may be circular. Each region 13A to 13D may be formed to have the same shape as the planar shape of the substrate loaded on each region 13A to 13D. The diameter of each region 13A to 13D may be larger than the diameter of the substrate to be loaded. The first to fourth regions 13A to 13D may be spaced apart from each other and arranged to be circularly symmetrical. The substrate holder 130 may have regions on which multiple substrates can be loaded simultaneously. In Figure 5, only four regions 13A to 13D are shown for illustrative purposes, but the substrate holder 130 may include four or fewer regions or four or more regions on which substrates can be loaded simultaneously. In one example, the substrate holder 130 is rotatable. The rotation of the substrate holder 130 can be adjusted in conjunction with the operation of the ultrasonic transducer 170.

[0061] Figure 6 is a plan view showing the arrangement of the ultrasonic transducer 170, the gas inlet 180, and the gas outlet 190 when the substrate holder 130 in Figure 1 includes the configuration illustrated in Figure 5. Figure 7 shows a cross-section of Figure 6 taken in the direction of 7-7'.

[0062] Referring to both Figures 6 and 7, the transducer 170 is positioned on the first region 13A of the substrate holder 130, and the gas inlet 180 and gas outlet 190 may be positioned between the first region 13A and the third region 13C, and between the second region 13B and the fourth region 13D. The gas inlet 180 and gas outlet 190 may be positioned at different locations. The ultrasonic transducer 170 may be positioned on any one of the second region 13B to the fourth region 13D.

[0063] In the arrangement shown in Figure 6, the substrate holder 130 can be rotated, or the ultrasonic transducer 170 can be rotated. When the substrate holder 130 is rotated, the ultrasonic transducer 170 remains fixed, and measurement and inspection of the material layer 150 provided on the substrate 140 loaded in the first to fourth regions 13A to 13D can be performed while the substrate holder 130 rotates clockwise or counterclockwise.

[0064] Figure 8 shows the case where the substrate holder 130 in Figure 1 includes the first to fourth regions 13A to 13D as illustrated in Figure 5, and the first to fourth ultrasonic transducers 17A to 17D are provided corresponding to each region 13A to 13D. Figure 9 shows a cross-section of Figure 8 taken in the direction of 9-9'.

[0065] Referring to both Figures 8 and 9, the first to fourth ultrasonic transducers 17A to 17D may be provided in a one-to-one correspondence with the first to fourth regions 13A to 13D. Each of the first to fourth ultrasonic transducers 17A to 17D may be the same as or different from the ultrasonic transducer 170 described in Figure 1 in terms of configuration, structure, and function. The gas inlet 180 and gas outlet 190 may be provided between the first ultrasonic transducer 17A and the third ultrasonic transducer 17C, and between the second ultrasonic transducer 17B and the fourth ultrasonic transducer 17D. The gas inlet 180 and gas outlet 190 may be provided at different positions on the upper plate 110B.

[0066] Figure 10 is a plan view showing the case where an ultrasonic transducer array is provided instead of a single ultrasonic transducer 170 in Figure 1. Figure 11 shows a cross-section of Figure 10 taken in the direction of 11-11'.

[0067] Referring to both Figures 10 and 11, a one-dimensional ultrasonic transducer array TA1 is provided above the material layer 150, with a plurality of ultrasonic transducers 18A to 18E arranged in a single row. For illustrative purposes, the ultrasonic transducer array TA1 is shown as consisting of five ultrasonic transducers 18A to 18E, but it may contain five or fewer ultrasonic transducers. In the example shown in Figure 10, the ultrasonic transducer array TA1 can scan the material layer 150 while moving in a predetermined direction for measurement and inspection. In one example, the material layer 150 may move instead of the ultrasonic transducer array TA1. Each ultrasonic transducer 18A to 18E of the ultrasonic transducer array TA1 may be used as a pixel. Therefore, by scanning the material layer 150 in a predetermined direction using the ultrasonic transducer array TA1, an image of the internal structure and defects of the material layer 150 can be obtained. In this case, the resolution of the resulting image may be adjusted by adjusting the distance between the ultrasonic transducer array TA1 and the material layer 150, and the carrier frequency used as ultrasound.

[0068] In one example, the size of each ultrasonic transducer 18A or 18E may be several micrometers to several millimeters.

[0069] Figure 12 is a plan view showing the case in Figure 10 where a two-dimensional ultrasonic transducer array TA2 is provided instead of the one-dimensional ultrasonic transducer array TA1.

[0070] Referring to Figure 12, a two-dimensional ultrasonic transducer array TA2 is provided on the upper side of the material layer 150, in which multiple ultrasonic transducers 12TS are aligned in two dimensions. Each ultrasonic transducer 12TS in the two-dimensional ultrasonic transducer array TA2 may be the same as or different from the ultrasonic transducer 170 in Figure 1 in terms of configuration, structure, and function. The ultrasonic transducer array TA2 may contain more or fewer ultrasonic transducers than the number of ultrasonic transducers 12TS shown in Figure 12. For example, in Figure 12, the ultrasonic transducer array TA2 has a configuration of 2 rows and 7 columns, but it may contain more than 2 rows, and more than 7 columns or less than 7 columns. The size of each ultrasonic transducer 12TS in the ultrasonic transducer array TA2 may be several μm to several mm.

[0071] In Figure 12, the ultrasonic transducer array TA2 can move in a predetermined direction to scan the material layer 150. Conversely, the material layer 150 may move instead of the ultrasonic transducer array TA2.

[0072] In the ultrasonic transducer array TA2, each ultrasonic transducer 12TS can be represented as a single pixel. Therefore, by scanning the material layer 150 using the ultrasonic transducer array TA2, an image of the internal structure and defects of the material layer 150 can be obtained. In this case, the resolution of the obtained image may be adjusted by adjusting the distance between the ultrasonic transducer array TA2 and the material layer 150 and the carrier frequency used as ultrasound. Furthermore, the image resolution can be increased by increasing the density of ultrasonic transducers in the ultrasonic transducer array TA2, that is, by reducing the pitch between ultrasonic transducers 12TS in the ultrasonic transducer array TA2.

[0073] Figures 13 to 16 show various embodiments of the first region A1 in Figure 1, i.e., various examples of the arrangement (configuration) of the ultrasonic transducer 170.

[0074] As shown in Figure 13, the ultrasonic transducer 170 is provided with the same thickness as the top plate 110B, and the ultrasonic transducer 170 can be provided in a form in which its entire thickness is completely embedded in the top plate 110B. As a result, the top surface of the ultrasonic transducer 170 is at the same height as the top surface of the top plate 110B, and the top surface of the ultrasonic transducer 170 and the top surface of the top plate 110B can form the same plane. Also, the bottom surface (bottom surface) of the ultrasonic transducer 170 is at the same height as the bottom surface (bottom surface) of the top plate 110B, and the bottom surface of the ultrasonic transducer 170 and the bottom surface of the top plate 110B can form the same plane.

[0075] In one embodiment, as illustrated in Figure 14, the ultrasonic transducer 170 may be provided such that its lower end protrudes below the upper plate 110B. That is, the bottom surface of the ultrasonic transducer 170 protrudes into the interior 115 of the first chamber 110, and the height of the bottom surface of the ultrasonic transducer 170 may be lower than the bottom surface of the upper plate 110B. The upper surface of the ultrasonic transducer 170 may be lower than the upper surface of the upper plate 110B.

[0076] As a result, the arrangement of the ultrasonic transducer 170 illustrated in Figure 14 is such that the remaining portion of the ultrasonic transducer 170, excluding its lower end, is embedded in the upper plate 110B. Reference numeral 1410 may be a cover or cap that covers the upper surface of the ultrasonic transducer 170. When the cover 1410 is removed, the upper surface of the ultrasonic transducer 170 is exposed, and components of the ultrasonic transducer 170 can be replaced or repaired through the exposed upper surface.

[0077] Reference numeral 1415 indicates wiring or piping containing such wiring for supplying an electrical signal to the ultrasonic transducer 170 for ultrasonic irradiation, or for transmitting an electrical signal output from the ultrasonic transducer 170 to the outside of the first chamber 110.

[0078] In one embodiment, as shown in Figure 15, the ultrasonic transducer 170 may have a bottom surface at the same height as the bottom surface of the top plate 110B, and a top surface that is higher than the top surface of the top plate 110B. That is, the ultrasonic transducer 170 may be provided in a form in which its upper end protrudes outside the top plate 110B and the remaining portion is embedded in the top plate 110B.

[0079] In one embodiment, as shown in Figure 16, the ultrasonic transducer 170 may be provided in a configuration where the height of its upper surface is the same as the height of the upper plate 110B, and the height of its lower surface is higher than the lower surface of the upper plate 110B. That is, the thickness of the ultrasonic transducer 170 may be thinner than the thickness of the upper plate 110B. This allows a recess to be provided in the area inside the upper plate 110B where the ultrasonic transducer 170 is provided.

[0080] Figure 17 is a cross-sectional view showing an ultrasonic measurement system (hereinafter referred to as the second measurement system) 1700 for three-dimensional nanostructure measurement and inspection including a high aspect ratio pattern according to an exemplary embodiment. Only the parts that differ from Figure 1 are described, and the same reference numerals indicate the same components, and their descriptions are omitted.

[0081] Referring to Figure 17, the second measurement system 1700 includes a transducer group TG1 for three-dimensional nanostructure measurement inspection of a single material layer 150. Transducer group TG1 may be located in the same position as the ultrasonic transducer 170 of the first measurement system 100 in Figure 1, or in other locations. Transducer group TG1 may include an ultrasonic emitting transducer 1770 that irradiates the material layer 150 with ultrasonic SW3, and a first transducer 1772 and a second transducer for ultrasonic receiving to receive ultrasonic SW5 reflected from the material layer 150. The ultrasonic SW3 emitted from the ultrasonic emitting transducer 1770 can be incident at an angle on the area under test (target area) of the material layer 150.

[0082] Ultrasonic signals reflected after passing through nanostructures or three-dimensional nanostructures within the material layer 150 can be detected by first and second transducers 1772 and 1774 for ultrasonic reception. Most three-dimensional nanopatterns with high aspect ratios (e.g., holes, slits, etc.) can operate on very strongly anisotropic ultrasonic metamaterials, and if there are no defects in the three-dimensional nanopatterns, the ultrasonic waves will travel completely perpendicular to each three-dimensional nanopattern, but the first and second transducers 1772 and 1774 can take advantage of such properties to receive the ultrasonic waves. Holes or slits, which are examples of nanopatterns with high aspect ratios, can be represented as air channels or gas channels since they are filled with air or gas in the measurement inspection.

[0083] A second receiving transducer 1774 may be used to measure the average value of the interface morphology of defect-free structures in a three-dimensional nanostructure array (e.g., an air channel array) contained in the material layer 150. The second receiving transducer 1774 may be configured to receive ultrasonic waves SW5 emitted at an angle from the area under test in the material layer 150.

[0084] The first receiving transducer 1772, similar to a dark-field imaging system in an optical inspection facility, can measure ultrasonic signals scattered at a wide azimuth angle at the location of defects in a three-dimensional nanostructure array with a high signal-to-noise ratio (SNR). The first receiving transducer 1772 may be positioned between the ultrasonic emitting transducer 1770 and the second receiving transducer 1774, and may be configured to receive ultrasonic SW4 scattered by defects. For example, the first receiving transducer 1772 may be configured to receive ultrasonic SW4 emitted perpendicularly in the area under test of the material layer 150. The ultrasonic SW4 may include ultrasonic waves scattered by defects within the area under test of the material layer 150.

[0085] The remaining components of the second measurement system 1700 may be identical to, or substantially identical to, those of the first measurement system 100.

[0086] Figure 18A illustrates an example of the configuration of transducer group TG1 in Figure 17.

[0087] Referring to Figure 18A, the ultrasonic emitting transducer 1770 and the first and second receiving transducers 1772 and 1774 of transducer group TG1 may be arranged within the upper plate 110B at the same distance D2 from the area under test of the material layer 150. The distance D2 may be, but is not limited to, 10 times or more the thickness L1 of the material layer 150. The ultrasonic emitting transducer 1770 is positioned at an angle to the material layer 150, so that the ultrasonic waves SW3 emitted from the ultrasonic emitting transducer 1770 can be incident on the area under test of the material layer 150 at an angle. The angle of incidence of the ultrasonic waves SW3 with respect to the upper surface of the material layer 150 may be acute.

[0088] The receiving second transducer 1774 may be positioned at an angle to the material layer 150. For example, the second transducer 1774 may be positioned at an angle within the top plate 110B so as to be able to receive ultrasonic waves SW5 emitted at an angle from the area under test in the material layer 150. Similar to the ultrasonic emitting transducer 1170, the receiving second transducer 1774 may be inclined at an acute angle to the bottom surface of the top plate 110B.

[0089] In one example, as illustrated in Figure 18B, a first path-changing member 1820 for changing the ultrasonic path may be provided between the ultrasonic emission transducer 1770 and the material layer 150. Furthermore, a second path-changing member 1830 for changing the ultrasonic path may be provided between the receiving second transducer 1774 and the material layer 150. The ultrasonic waves emitted from the ultrasonic emission transducer 1770 are reflected by the first path-changing member 1820 and then incident on the area of ​​the material layer 150 under test.

[0090] The ultrasonic waves incident on the second path changing member 1830 from the area under test in the material layer 150 are reflected by the second path changing member 1830 and can be incident on the second transducer 1774 for receiving.

[0091] In one example, the first path changing member 1820 may include, but is not limited to, a first supersonic reflector. The second path changing member 1830 may include, but is not limited to, a second supersonic reflector.

[0092] In one example, the ultrasonic emission transducer 1770 and the receiving second transducer 1774 are not arranged at an angle as described above, but can be provided flat on the bottom surface of the top plate 110B, like the receiving first transducer 1772. In this case, as illustrated in Figure 18C, a first path changing member 1820 that can change the propagation path of the ultrasonic waves emitted from the ultrasonic emission transducer 1770 may be provided between the ultrasonic emission transducer 1770 and the material layer 150 so that the ultrasonic waves SW3 emitted from the ultrasonic emission transducer 1770 are incident at an angle to the area under test of the material layer 150. For the receiving second transducer 1774, a second path changing member 1830 that can change the propagation path of the ultrasonic waves SW5 so that the ultrasonic waves SW5 incident at an angle from the area under test of the material layer 150 are incident perpendicular to the second transducer 1774 may be provided between the ultrasonic emission transducer 1770 and the material layer 150.

[0093] In one example, the first and second path-changing members 1820 and 1830 may be provided within the ultrasonic emission transducer 1770 and the second receiving transducer 1774, respectively. In one example, the first and second path-changing members 1820 and 1830 may be provided separately.

[0094] Figure 19 is a cross-sectional view showing an ultrasonic measurement system (hereinafter referred to as the third measurement system) 1900 for three-dimensional nanostructure measurement and inspection including a high aspect ratio pattern according to an exemplary embodiment. Only the parts that differ from Figure 1 are described, and the same reference numerals indicate the same components, and their descriptions are omitted.

[0095] Referring to Figure 19, the third measurement system 1900 may or may not be the same as the first chamber 110 of the first measurement system 100 in Figure 1, except that the superstructure of the second chamber 1910 is hemispherical.

[0096] The first ultrasonic transducer 170 is located inside the second chamber 1910 and is separated from the hemispherical ceiling of the second chamber 1910. The distance 19D between the first ultrasonic transducer 170 and the material layer 150 may be the same as the distance D1 between the first ultrasonic transducer 170 and the material layer 150 in Figure 1. Furthermore, the relationship between the distance 19D between the first ultrasonic transducer 170 and the material layer 150 and the thickness L1 of the material layer 150 may be the same as the relationship between the distance D1 between the first ultrasonic transducer 170 and the material layer 150 and the thickness L1 of the material layer 150 in Figure 1.

[0097] The gas inlet 180 and gas outlet 190 are located on the hemispherical superstructure of the second chamber 1910. The gas inlet 180 and gas outlet 190 can be located in various positions, as illustrated in Figures 2 to 12.

[0098] The embodiments illustrated in Figures 2 to 12 can also be applied to the third measurement system 1900. That is, the substrate holder 130 of the third measurement system 1900 may include a plurality of regions on which a substrate can be loaded, and may have one ultrasonic transducer corresponding to the plurality of regions, or it may have a plurality of ultrasonic transducers corresponding one-to-one to the plurality of regions.

[0099] Figure 20 is a cross-sectional view showing an ultrasonic measurement system (hereinafter referred to as the fourth measurement system) 2000 for three-dimensional nanostructure measurement and inspection including a high aspect ratio pattern according to an exemplary embodiment. Only the differences from the third measurement system 1900 in Figure 19 will be described.

[0100] Referring to both Figures 19 and 20, the fourth measurement system 2000 may include a second transducer group TG2 instead of the first ultrasonic transducer 170 of the third measurement system 1900. The second transducer group TG2 may include an ultrasonic emitting transducer 2070 and first and second ultrasonic transducers 2072 and 2074 for ultrasonic reception. The configuration of the ultrasonic transducers in the second transducer group TG2 may be the same as or different from the configuration of the first transducer group TG1 illustrated in Figure 18. The configurations and functions of the ultrasonic emitting transducer 2070, the first receiving transducer 2072, and the second receiving transducer 2074 of the second transducer group TG2 may be the same as the configurations and functions of the ultrasonic emitting transducer 1770, the first receiving transducer 1772, and the second receiving transducer 1774 of the first transducer group TG1 illustrated in Figure 18. The remaining components of the fourth measurement system 2000 may be identical to those of the third measurement system 1900.

[0101] For convenience, Figures 19 and 20 do not show the high-pressure gas supply source 198, the pressure regulating valve 185 connected to the gas inlet 180, or the exhaust device 205 connected to the gas outlet 190.

[0102] Figure 21 illustrates an example of a pattern with a high aspect ratio formed in the material layer 150, specifically a pattern with a three-dimensional nanostructure, which consists of multiple holes 21h, i.e., multiple air channels, formed in the material layer 150.

[0103] Referring to Figure 21, in the material layer 150, multiple holes 21h can be spaced apart from each other and aligned at a first pitch 21P. The first pitch 21P may be larger than the opening diameter 21D of the holes 21h. In one example, the first pitch 21P may be several hundred nm to several tens of μm, but is not limited thereto. In one example, the first pitch 21P may be 100 nm to 90 μm, 300 nm to 70 μm, or 500 nm to 50 μm, but is not limited thereto. In one example, the opening diameter 21D of the holes 21h may be 100 nm to several μm, but is not limited thereto. The diameter of the holes 21h may be constant from the top (opening) to the bottom, but may vary depending on the depth. Also, the diameter 21D of each hole 21h may vary depending on the position of each hole 21h. Also, the depth of each hole 21h may vary depending on the position of each hole 21h.

[0104] In the material layer 150, the region 2120 between holes 21h may be an element region. The element region 2120 may include, but is not limited to, semiconductor elements, optical elements, memory elements, switching elements, and wiring. In one example, the element region 2120 may include a vertically stacked multilayer structure, and the elements and wiring described above may be formed in each layer of the multilayer. In one example, the element region 2120 may include a high-bandwidth memory (HBM), in which case each hole 21h may be a vertical through-hole.

[0105] Figure 22 is a plan view of Figure 21.

[0106] Referring to Figure 22, multiple holes 21h on a plane are aligned horizontally and vertically with a first pitch 21P. The first pitches 21P in the horizontal and vertical directions may be the same or different from each other. In the case of multiple holes 21h aligned in a grid in this way, the unit alignment configuration 2230 may be a square grid. In the unit alignment configuration 2230, an element region 2120 is located in the center, and four holes 21h are arranged around the element region 2120. The element region 2120 is the region where the element is formed, and may be expressed as an element formation region or an electronic element region, etc. The planar shape of the unit alignment configuration 2230 can vary. As an example, as shown in Figure 23, the unit alignment configuration 2330 may be a configuration in which one through-hole 21h is located in the center of a hexagonal element region 2320. The material layer 150 may include a plurality of element regions 2320 and a plurality of through-holes 21h, and such plurality of element regions 2320 and plurality of through-holes 21h correspond to the result of the unit alignment form 2330 being repeated vertically and horizontally.

[0107] Figure 24 shows an example of a high aspect ratio three-dimensional nanostructure formed in material layer 150.

[0108] Referring to Figure 24, the material layer 150 includes a plurality of element regions 2420 and a plurality of slits 24S. Each slit 24S is formed between the plurality of element regions 2420. The slits 24S are aligned in a predetermined direction with a second pitch 24P. The width 24W of the slit 24S in a predetermined direction may be smaller than the second pitch 24P. The width 24W of the slit 24S in a predetermined direction may be smaller than the width of the element region 2420 (the second pitch 24P minus the width 24W). On the inner surface of the slit 24S, i.e., the side surface of the element region 2420, there may be irregularities 25A, as illustrated in Figure 25. The irregularities 25A correspond to the convex irregularities on the side surface of the element region 2420 that appear during the process of forming the slits 24S.

[0109] Therefore, the length of the irregularities 25A may be much smaller than the width 24W of the slit 24S. The irregularities 25A may be a part of the element formed in the element region 2420 that is exposed to the slit 24S. On the side surface of the element region 2420, the irregularities 25A may be aligned in first and second directions perpendicular to each other. For example, the irregularities 25A may be aligned in the first direction (e.g., the Z-axis direction) by a third pitch 2P1 and in the second direction (e.g., the Y-axis direction) by a fourth pitch 2P2. In one example, the third and fourth pitches 2P1 and 2P2 may be the same or different from each other. In one example, the third pitch 2P1 may change as it progresses in the first direction, and the fourth pitch 2P2 may also change as it progresses in the second direction. In one example, Figure 25 shows the length and shape of the irregularities 25A as being the same, but they may be different from each other, or partially different from each other.

[0110] Figure 26 is a plan view showing an example of material layer 150.

[0111] Referring to Figure 26, the material layer 150 includes a plurality of chip regions 2620 and a plurality of scribe line regions 26T on which key patterns and the like are formed. The chip regions 2620 are regions containing high aspect ratio three-dimensional nanostructure patterns and may include various elements (e.g., memory) and three-dimensional nanostructure air channels. The scribe line regions 26T are located between the plurality of chip regions 2620. Test Element Group (TEG) patterns may be formed in the scribe line regions 26T that can be used as a reference for alignment or measurement inspection of the chip regions 2620. For example, the scribe line regions 26T may include the same TEG pattern as any pattern formed in the chip regions 2620 (e.g., memory elements), or a TEG pattern having a spatially deformed distribution so that it can be compared with the said pattern.

[0112] In one example, the TEG pattern formed in the scribe line region 26T may be a thin film without any structure. Furthermore, the TEG pattern formed in the scribe line region 26T is a pattern formed together with the three-dimensional nanostructure in the chip region 2620, and may be a pattern formed by splitting the lengths of specific structures in various ways during the lithography patterning stage.

[0113] In this way, regions 26T in which TEG patterns are formed can be arranged at specific intervals adjacent to the air channel regions of the 3D nanostructure to be measured. The TEG patterns formed in regions 26T can be used to improve measurement accuracy and calibration. For example, when measuring the formation characteristics of air channels in a 3D nanostructure for each 3D memory semiconductor chip, the scribe line region around the chip can be used as the region in which TEG patterns are formed. By identifying or measuring the TEG patterns formed in the scribe line region 26T, the characteristics of the process profile of the air channels in the 3D nanostructure can be understood, and correction values ​​can be provided when actually measuring the 3D nanostructure, or more precise measurement values ​​can be provided based on machine learning algorithms.

[0114] Figure 27 is a flowchart illustrating, step by step, a method for manufacturing a semiconductor device using an ultrasonic measurement and inspection system according to an exemplary embodiment.

[0115] Referring to Figure 27, first, a material layer containing a three-dimensional nanostructure is formed on the substrate (S1). The substrate may include a semiconductor substrate or a non-semiconductor substrate. In one example, the first step S1 may include the step of forming a plurality of patterns on the substrate. The plurality of patterns may include at least one of semiconductor elements, optical elements, memory elements, switching elements, and wiring. The plurality of patterns may be formed in multiple layers. The plurality of patterns may be formed using a photolithography process. The first step S1 may include the step of forming an interlayer insulating layer covering the plurality of patterns.

[0116] The first step S1 may include forming a high aspect ratio pattern in a material layer on which multiple patterns have been formed. The high aspect ratio pattern may include, but is not limited to, three-dimensional nanostructure air channels (e.g., holes or slits). The three-dimensional nanostructure holes or slits may be for securing areas on which vertical wiring is formed to connect multilayered elements or wirings to each other. Wiring can be exposed through the three-dimensional nanostructure holes or slits. In a subsequent step, the holes or slits may be filled with conductive wiring material.

[0117] Next, the substrate on which the material layer has been formed is loaded into the chamber of an ultrasonic measurement and inspection device (S2). In one example, the measurement and inspection device may be one of the measurement systems described in Figures 1 to 20.

[0118] Next, a measurement inspection is performed on the material layer using a measurement and inspection device (S3).

[0119] In step S3, where the measurement and inspection are performed, the measurement and inspection may be carried out in a high-pressure chamber using ultrasound. In such a measurement and inspection, high-pressure gas is supplied to the air channels of the three-dimensional nanostructure formed in the material layer, thereby reducing the thermal viscous resistance between the fine nanostructure on the sides of the air channels and the ultrasound. This can reduce the energy attenuation of the ultrasound as it travels along the air channels, allowing for precise measurements with a higher signal magnitude at the same frequency.

[0120] An ultrasonic pulse output from an ultrasonic transducer (e.g., 170 in Figure 1) inside the chamber penetrates through the air layer into a three-dimensional nanostructured air channel array. Some reflected waves may be generated as the ultrasonic pulse penetrates the three-dimensional nanostructured air channel array, and the ultrasonic pulse may be reflected after reaching the lower end of the air channels. Furthermore, as the ultrasonic pulse travels along the air channels contained in the air channel array, an echo signal may be generated by defects in the center of the air channels (e.g., etching residue, unetched areas, etc.). The ultrasonic transducer 170 can measure the waveform of the ultrasonic signal that is thus reflected back, and then detect the interface morphology of the three-dimensional nanostructure within the material layer and the location and characteristics of defects by comparing the measured values ​​with simulations, prepared lookup tables, or by inference using machine learning algorithms.

[0121] In measurement inspection, the morphology and size of the three-dimensional nanostructures and air channels contained in the material layer cannot be controlled. Therefore, in order to enhance the measurement signal and improve the resolution of the measurement image in measurement inspection, the measurement system 100 in Figure 1 allows tuning of the carrier frequency of the ultrasound incident on the material layer 150 and the external resonance frequency generated by the distance D1 between the ultrasonic transducer 170 and the material layer 150. For example, by fine-tuning the carrier frequency for the ultrasound reflected from the three-dimensional nanostructures in the material layer 150 and adjusting the distance D1 (by tuning the external resonance frequency), an optimal measurement signal and an image with optimal resolution can be obtained. Tuning of the carrier frequency and the external resonance frequency can be performed in real time.

[0122] The resolution of the measurement signal and measurement image in measurement inspection may be increased by changing the envelope of the ultrasonic pulse irradiated onto the material layer (changes in waveform such as pulse width and height). Methods of changing the envelope of the ultrasonic pulse may be useful for detecting minute defects or flaws. For example, in a method for measuring the echo pulse delay from a minute defect, using a first ultrasonic pulse with a relatively narrow envelope width for the ultrasound irradiated onto the material layer may be advantageous for increasing the vertical image resolution. Conversely, using a second ultrasonic pulse with a relatively wide envelope width (e.g., 1 / 10 of the carrier frequency) may be advantageous for increasing the horizontal image resolution. As the ultrasound irradiated onto the material layer, an ultrasonic pulse in a form that decreases exponentially with respect to time may be used. For example, the first and second ultrasonic pulses may be irradiated sequentially or simultaneously. For example, the ultrasonic frequency and form of the ultrasonic pulse used in measurement inspection may be determined by considering the aperture diameter of the air channel formed in the material layer in the measurement inspection. For example, when the aperture diameter is narrow, relatively high-frequency ultrasound can be used, while when the aperture diameter is wide, relatively low-frequency ultrasound can be used.

[0123] After the measurement and inspection are completed, the substrate with the material layer formed on it is unloaded from the measurement and inspection device (S4).

[0124] After unloading, subsequent processes are performed on the material layer according to the measurement and inspection results (S5). In one example, the subsequent process may include unloading the substrate from the chamber and then filling the air channels in the material layer with a conductive material.

[0125] From the exemplary embodiments described above, various forms of embodiments can be suggested as follows.

[0126] A measuring and inspection apparatus according to one embodiment, A first ultrasonic transducer that emits ultrasound to the object to be measured and inspected, The substrate holder may include a surface that is separated from the first ultrasonic transducer and faces the first ultrasonic transducer, The first ultrasonic transducer and the substrate holder may be in a gas atmosphere with a pressure higher than atmospheric pressure.

[0127] In one example, the first ultrasonic transducer and the substrate holder may be in a gas atmosphere of 5 atm to 20 atm.

[0128] In one example, the first ultrasonic transducer and the substrate holder may be provided within the chamber of the high-pressure gas atmosphere.

[0129] In one example, the substrate holder may be provided within the chamber of the high-pressure gas atmosphere, and the first ultrasonic transducer may be provided such that its ultrasonic emission surface is exposed to the high-pressure gas atmosphere within the chamber.

[0130] In one example, the system may further include second and third ultrasonic transducers configured to receive ultrasonic waves reflected from the object being measured and inspected.

[0131] In one example, the first ultrasonic transducer may be configured to emit ultrasonic waves that are incident at an angle to the object to be measured and inspected.

[0132] In one example, one of the second and third ultrasonic transducers may be configured to receive ultrasonic waves reflected at an oblique angle from the object to be measured and inspected, while the remaining transducer may be configured to receive ultrasonic waves reflected perpendicularly from the object to be measured and inspected.

[0133] In one example, the first to third ultrasonic transducers may be located equidistant from the area being measured and inspected.

[0134] In one example, the substrate holder may include multiple regions on which the substrate is loaded.

[0135] In one example, multiple first ultrasonic transducers may be provided.

[0136] In one example, the plurality of first ultrasonic transducers may be aligned to form a transducer array.

[0137] In one example, the transducer array may include a one-dimensional or two-dimensional transducer array.

[0138] In one example, the substrate holder may be configured to allow rotational motion and / or linear reciprocating motion.

[0139] In one example, the transducer array may be configured to allow for linear reciprocating motion.

[0140] In one example, the substrate holder may include a plurality of regions on which the substrate is loaded, and the plurality of first ultrasonic transducers may be arranged to correspond one-to-one with the plurality of regions.

[0141] In one example, the system may further include a high-pressure gas supply source provided to supply high-pressure gas to the chamber in order to maintain the pressure inside the chamber at a pressure higher than atmospheric pressure.

[0142] In one example, the system may further include a discharge device for discharging the gas supplied to the chamber to the outside of the chamber.

[0143] In one example, the system may further include a temperature control unit for maintaining the internal temperature of the chamber at a set temperature while the measurement and inspection of the object to be measured and inspected is being carried out.

[0144] In one example, the high-pressure gas atmosphere may include nitrogen (N2), oxygen (O2), hydrogen (H2), or a mixture thereof.

[0145] In one example, the first ultrasonic transducer may be embedded in the wall of the chamber facing the substrate holder.

[0146] In one example, a step may be formed between the ultrasonic emission surface of the first ultrasonic transducer and the wall of the chamber.

[0147] In one example, the system further includes second and third ultrasonic transducers configured to receive ultrasonic waves reflected from the object to be measured and inspected, the second and third ultrasonic transducers may be configured to be embedded in the wall of the chamber.

[0148] In one example, some of the first to third ultrasonic transducers may be arranged at an angle.

[0149] In one example, the first to third ultrasonic transducers are all mounted at the same height, and some of the first to third ultrasonic transducers may include a member that alters the path of the emitted or received ultrasonic waves.

[0150] A method for manufacturing a semiconductor device according to one embodiment is: The steps include forming a material layer containing a three-dimensional nanostructure on a substrate, The steps include loading the substrate on which the material layer is formed into an ultrasonic measurement and inspection device, The steps include: performing measurement and inspection on the aforementioned material layer; After the measurement and inspection, the step of unloading the substrate from the measurement and inspection device, The step includes performing a subsequent process on the material layer, The aforementioned measuring and inspection device, A first ultrasonic transducer that emits ultrasonic waves into the material layer, The substrate holder, which is opposite the first ultrasonic transducer and includes a region on which the substrate is loaded, The first ultrasonic transducer and the substrate holder are in a gas atmosphere with a pressure higher than atmospheric pressure.

[0151] In one example, the step of forming the material layer is: The steps include forming a plurality of patterns on the substrate, The steps include forming an interlayer insulating layer that covers the plurality of patterns, The process may also include the step of removing a portion of the interlayer insulating layer to form the three-dimensional nanostructure such that a portion of the plurality of patterns is exposed.

[0152] In one example, the material layer includes a plurality of regions on which the element is formed. In the step of forming the three-dimensional nanostructure, a key pattern that can serve as a reference for the measurement and inspection may be formed between the plurality of regions.

[0153] In one example, the step of performing the measurement and inspection is: The steps include tuning the carrier frequency of the ultrasound irradiated onto the material layer, The procedure may include the step of tuning the distance between the first ultrasonic transducer and the material layer.

[0154] In one example, the step of performing the measurement and inspection is: The step includes irradiating the material layer with ultrasonic pulses, The step of irradiating with the aforementioned pulse is: Depending on the measurement purpose, the procedure may include a step of changing the width of the ultrasonic pulse.

[0155] In one example, the step of irradiating with ultrasonic pulses is: The steps include irradiating the material layer with a first ultrasonic pulse for measurement and inspection of the horizontal structure of the material layer, The step of irradiating the material layer with a second ultrasonic pulse for measurement and inspection of the vertical structure of the material layer, The form of the first ultrasonic pulse may differ from the form of the second ultrasonic pulse.

[0156] In one example, the first ultrasonic pulse and the second ultrasonic pulse may be irradiated simultaneously.

[0157] In one example, one of the first and second ultrasonic pulses may be irradiated before the other.

[0158] In one example, the step of irradiating with an ultrasonic pulse may include the step of irradiating with an ultrasonic pulse that decreases exponentially.

[0159] A measurement and inspection method according to one embodiment is: The steps include: irradiating the object to be measured and inspected with ultrasound, The step includes receiving ultrasonic waves reflected from the object to be measured and inspected, The steps of irradiating with ultrasound and receiving with ultrasound are performed under a high-pressure gas atmosphere higher than atmospheric pressure.

[0160] In one example, the step of irradiating with ultrasound is: The steps include tuning the carrier frequency of the emitted ultrasound, The procedure may also include the step of tuning the distance between the emitting surface of the irradiated ultrasonic waves and the object to be measured and inspected.

[0161] In one example, the step of irradiating with ultrasound is: The process includes the step of irradiating with ultrasonic pulses, The step of irradiating with ultrasonic pulses is: Depending on the measurement purpose, the procedure may include a step of changing the width of the ultrasonic pulse.

[0162] In one example, the step of irradiating with ultrasonic pulses is: The steps include: irradiating the object to be measured and inspected with a first ultrasonic pulse for the purpose of measuring and inspecting the horizontal structure of the object to be measured and inspected; The step of irradiating the object to be measured and inspected with a second ultrasonic pulse for the purpose of measuring and inspecting the vertical structure of the object to be measured and inspected, The form of the first ultrasonic pulse may differ from the form of the second ultrasonic pulse.

[0163] In one example, the step of irradiating with an ultrasonic pulse may include the step of irradiating with an ultrasonic pulse that decreases exponentially.

[0164] Although many details are specifically described in the above description, these should not be interpreted as limiting the scope of the invention, but rather as examples of preferred embodiments. Therefore, the scope of the invention should not be defined by the described embodiments, but by the technical idea described in the claims. [Industrial applicability]

[0165] The disclosed measurement and inspection device can explore the depths of semiconductor elements and electronic devices using ultrasound, and through such exploration, it can measure microstructures and defects in contact with air channels inside semiconductor elements and electronic devices. Therefore, the disclosed measurement and inspection device can be used for defect inspection of semiconductor elements and electronic devices. Semiconductor elements and electronic devices may include three-dimensional nanostructures. For example, the disclosed measurement and inspection device can be used for measuring the depths of three-dimensional memory (3D memory) (e.g., 3D DRAM, HBM, VNAND). Furthermore, the disclosed measurement and inspection device can be used in ultrasonic measurement techniques for localized location measurement and defect inspection of air channel-based three-dimensional nanostructures in focusing lenses or metal lenses for eyeglasses in waveguide-type augmented reality (AR) and extended reality (XR) near-eye displays. [Explanation of Symbols]

[0166] 2P1 3rd Pitch 2P2 4th Pitch 12TS Transducer 13A to 13D: Regions 1 to 4 17A to 17D First to fourth transducer 18A or 18E Multiple transducers 19D Interval (distance) 21D Hole Diameter 21h Hole 21P First Pitch 24P 2nd Pitch 24W width 24S Slit 25A unevenness 26T area 100 First Measurement System 110 First Chamber 110A Chamber side wall 110B Chamber top plate 115 Inside the chamber 120 Chuck 130 PCB holder 140 circuit boards 150 material layer 160 Temperature Control Unit 170 Transducer 180 Gas Inlet 185 Pressure regulating valve 190 Gas outlet 198 High-pressure gas supply source 195 Window 205 Exhaust system (equipment) 1410 Cover 1415 Wiring 1700 Second Measurement System 1770 Ultrasonic Emitting Transducer 1772 First transducer for receiving 1774 Second transducer for receiving 1900, 2000 Third and fourth measurement systems 1910 Second Chamber 2070 Ultrasonic Emitting Transducer 2072 First transducer for receiving 2074 Second transducer for receiving 2120, 2320 element regions 2230, 2330 unit alignment configuration 2420 Element Region (Element Formation Region) 2620 Element Region (Element Formation Region) D1, D2 distance L1 Material layer thickness Ultrasound irradiated onto the SW1 material layer SW2 reflected ultrasound SW3, SW4, SW5 Ultrasound TG1 Transducer Group 1 TG2 Transducer Group 2

Claims

1. A first ultrasonic transducer that emits ultrasound to the object to be measured and inspected, The device includes a substrate holder that is separated from the first ultrasonic transducer and includes a surface facing the first ultrasonic transducer, The first ultrasonic transducer and the substrate holder are in a measurement and inspection apparatus under a high-pressure gas atmosphere higher than atmospheric pressure.

2. The measurement and inspection apparatus according to claim 1, wherein the first ultrasonic transducer and the substrate holder are provided in the chamber of the high-pressure gas atmosphere.

3. The measurement and inspection apparatus according to claim 1, wherein the substrate holder is provided in the chamber of the high-pressure gas atmosphere, and the first ultrasonic transducer is provided such that its ultrasonic emission surface is exposed to the high-pressure gas atmosphere in the chamber.

4. The measurement and inspection apparatus according to claim 2 or 3, further comprising second and third ultrasonic transducers provided for receiving ultrasonic waves reflected from the object to be measured and inspected.

5. The measurement and inspection apparatus according to claim 2 or 3, wherein a plurality of the first ultrasonic transducers are provided.

6. The measurement and inspection apparatus according to claim 5, wherein the plurality of first ultrasonic transducers are aligned to form a one-dimensional or two-dimensional transducer array.

7. The substrate holder includes a plurality of regions on which the substrate is loaded. The measurement and inspection apparatus according to claim 6, wherein the plurality of first ultrasonic transducers are provided so as to correspond one-to-one with the plurality of regions.

8. The measuring and inspecting apparatus according to claim 2 or 3, further comprising a high-pressure gas supply source provided to supply high-pressure gas to the chamber for maintaining the pressure inside the chamber at a pressure higher than atmospheric pressure.

9. The measurement and inspection apparatus according to claim 8, further comprising a discharge device for discharging the gas supplied to the chamber to the outside of the chamber.

10. The measurement and inspection apparatus according to claim 9, further comprising a temperature control unit for maintaining the internal temperature of the chamber at a set temperature while the measurement and inspection of the object to be measured and inspected is being carried out.

11. The aforementioned high-pressure gas atmosphere contains nitrogen (N ２ ), oxygen (O ２ ), hydrogen (H ２ The measuring and testing apparatus according to claim 1, comprising ) or a mixture thereof.

12. The measurement and inspection apparatus according to claim 3, wherein the first ultrasonic transducer is embedded in the wall of the chamber facing the substrate holder.

13. The system further includes second and third ultrasonic transducers provided to receive ultrasonic waves reflected from the object to be measured and inspected, The measurement and inspection apparatus according to claim 12, wherein the second and third ultrasonic transducers are provided in a manner embedded in the wall of the chamber.

14. The first to third ultrasonic transducers are all installed at the same height. The measurement and inspection apparatus according to claim 13, wherein a portion of the first to third ultrasonic transducers includes a member that alters the path of the emitted or received ultrasonic waves.

15. The steps include forming a material layer containing a three-dimensional nanostructure on a substrate, The steps include loading the substrate on which the material layer is formed into an ultrasonic measurement and inspection device, The steps include: performing measurement and inspection on the aforementioned material layer; After the measurement and inspection, the step of unloading the substrate from the measurement and inspection device, The step includes performing a subsequent process on the material layer, The aforementioned measuring and inspection device, A first ultrasonic transducer that emits ultrasonic waves into the material layer, The substrate holder, which is opposite the first ultrasonic transducer and includes a region on which the substrate is loaded, A method for manufacturing a semiconductor device, wherein the first ultrasonic transducer and the substrate holder are in a gas atmosphere with a pressure higher than atmospheric pressure.

16. The step of forming the material layer is, The steps include forming a plurality of patterns on the substrate, The steps include forming an interlayer insulating layer that covers the plurality of patterns, A method for manufacturing a semiconductor device according to claim 15, comprising the step of removing a portion of the interlayer insulating layer to form the three-dimensional nanostructure such that a portion of the plurality of patterns is exposed.

17. The step of performing the aforementioned measurement and inspection is: The steps include tuning the carrier frequency of the ultrasound irradiated onto the material layer, A method for manufacturing a semiconductor device according to claim 15, comprising the step of tuning the distance between the first ultrasonic transducer and the material layer.

18. The steps include: irradiating the object to be measured and inspected with ultrasound, The step includes receiving ultrasonic waves reflected from the object to be measured and inspected, A measurement and inspection method wherein the steps of irradiating with ultrasound and receiving with ultrasound are performed under a high-pressure gas atmosphere higher than atmospheric pressure.

19. The step of irradiating with ultrasound is, The steps include tuning the carrier frequency of the emitted ultrasound, The measurement and inspection method according to claim 18, comprising the step of tuning the distance between the emitting surface of the irradiated ultrasonic waves and the object to be measured and inspected.

20. The step of irradiating with ultrasound is, The process includes the step of irradiating with ultrasonic pulses, The step of irradiating with ultrasonic pulses is: The measurement and inspection method according to claim 18, further comprising the step of changing the width of the ultrasonic pulse according to the purpose of measurement.

21. The step of irradiating with ultrasonic pulses is: The steps include: irradiating the object to be measured and inspected with a first ultrasonic pulse for the purpose of measuring and inspecting the horizontal structure of the object to be measured and inspected; The step of irradiating the object to be measured and inspected with a second ultrasonic pulse for the purpose of measuring and inspecting the vertical structure of the object to be measured and inspected, The measurement and inspection method according to claim 20, wherein the form of the first ultrasonic pulse is different from the form of the second ultrasonic pulse.

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