Semiconductor equipment

Abstract

The present invention provides a semiconductor device comprising a semiconductor element having a first electrode and a second electrode of different sizes, which enables stronger conductive bonding of the first electrode and the second electrode to a conductive member. [Solution] The semiconductor device A10 comprises a conductive member 10 and a semiconductor element 30 located on one side of the conductive member 10 in a first direction z. The semiconductor element 30 has an element surface 301, a first electrode 36, and a second electrode 37. In the first direction z, the area of ​​the first electrode 36 is larger than the area of ​​the second electrode 37. The dimension of the first electrode 36 in the first direction z is smaller than the dimension of the second electrode 37 in the first direction z. The conductive member 10 has a first bonding surface to which the first electrode 36 is electrically bonded and a second bonding surface to which the second electrode 37 is electrically bonded. In the first direction z, the first bonding surface is located closer to the element surface 301 than the second bonding surface.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device.

Background Art

[0002] Patent Document 1 discloses an example of a semiconductor device including a conductive member and a semiconductor element conductively joined to one side in the thickness direction of the conductive member. The semiconductor element has a plurality of electrodes. Each of the plurality of electrodes has a base portion and a columnar portion protruding from the base portion. The columnar portion of each of the plurality of electrodes is conductively joined to the conductive member.

[0003] In the configuration of the semiconductor device disclosed in Patent Document 1, the plurality of electrodes include a first electrode and a second electrode. When viewed in the thickness direction, the area of the columnar portion of the second electrode is larger than the area of the columnar portion of the first electrode. In this case, if the columnar portions of the first electrode and the second electrode are integrally formed by electrolytic plating, the dimension in the thickness direction of the columnar portion of the second electrode becomes smaller than the dimension in the thickness direction of the columnar portion of the first electrode. As a result, in the second electrode, there is a possibility that a bonding failure (open failure) with respect to the conductive member may occur.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

[0005] [Summary] In view of the above circumstances, an object of the present disclosure is to provide a semiconductor device capable of more firmly and conductively joining each of the first electrode and the second electrode to a conductive member in a configuration including a semiconductor element having the first electrode and the second electrode with different sizes from each other.

[0006] A semiconductor device provided by this disclosure comprises a conductive member and a semiconductor element located on one side of the conductive member in a first direction and conductive to the conductive member. The semiconductor element has an element surface facing the conductive member and a first electrode and a second electrode protruding from the element surface. In the first direction, the area of ​​the first electrode is larger than the area of ​​the second electrode. The dimension of the first electrode in the first direction is smaller than the dimension of the second electrode in the first direction. The conductive member has a first bonding surface to which the first electrode is conductively bonded and a second bonding surface to which the second electrode is conductively bonded. In the first direction, the first bonding surface is located closer to the element surface than the second bonding surface.

[0007] Other features and advantages of this disclosure will become more apparent from the detailed description below, based on the accompanying drawings. [Brief explanation of the drawing]

[0008] [Figure 1] Figure 1 is a plan view of a semiconductor device according to the first embodiment of the present disclosure, and shows a transparent encapsulating resin. [Figure 2] Figure 2 is a plan view corresponding to Figure 1, further showing the first junction layer, the second junction layer, and the semiconductor device. [Figure 3] Figure 3 is a bottom view of the semiconductor device shown in Figure 1. [Figure 4] Figure 4 is a front view of the semiconductor device shown in Figure 1. [Figure 5] Figure 5 is a right side view of the semiconductor device shown in Figure 1. [Figure 6] Figure 6 is a cross-sectional view along the line VI-VI in Figure 2. [Figure 7] Figure 7 is a cross-sectional view along the line VII-VII in Figure 2. [Figure 8] Figure 8 is a cross-sectional view along the line VIII-VIII in Figure 2. [Figure 9] Figure 9 is a magnified section of Figure 2, showing the vicinity of one of the multiple first electrodes of the semiconductor device. [Figure 10]Figure 10 is a cross-sectional view along line XX in Figure 9. [Figure 11] Figure 11 is a magnified section of Figure 2, showing the vicinity of one of the multiple second electrodes of the semiconductor device. [Figure 12] Figure 12 is a cross-sectional view along the line XII-XII in Figure 11. [Figure 13] Figure 13 is a partially enlarged plan view of a semiconductor device according to the second embodiment of this disclosure, and corresponds to Figure 9. [Figure 14] Figure 14 is a cross-sectional view along the line XIV-XIV in Figure 13. [Figure 15] Figure 15 is a partially enlarged plan view of a semiconductor device according to a modified example of the second embodiment of the present disclosure, and corresponds to Figure 13. [Figure 16] Figure 16 is a cross-sectional view along the line XVI-XVI in Figure 15. [Figure 17] Figure 17 is a partially enlarged plan view of a semiconductor device according to the third embodiment of the present disclosure, and corresponds to Figure 9. [Figure 18] Figure 18 is a cross-sectional view along the line XVIII-XVIII in Figure 17. [Figure 19] Figure 19 is a partially enlarged plan view of a semiconductor device according to the fourth embodiment of this disclosure, and corresponds to Figure 9. [Figure 20] Figure 20 is a cross-sectional view along the line XX-XX in Figure 19. [Figure 21] Figure 21 is a plan view of a semiconductor device according to the fifth embodiment of this disclosure, showing a first bonding layer, a second bonding layer, a semiconductor element, and a sealing resin. [Figure 22] Figure 22 is a cross-sectional view along the line XXII-XXII in Figure 21. [Figure 23] Figure 23 is a cross-sectional view along the line XXIII-XXIII in Figure 21. [Figure 24] Figure 24 is a magnified view of a portion of Figure 22. [Figure 25] Figure 25 is a magnified view of a portion of Figure 23.

[0009] [Detailed explanation] Details of the present disclosure will be described based on the accompanying drawings.

[0010] 〔First Embodiment〕 Based on FIGS. 1 to 12, a semiconductor device A10 according to a first embodiment of the present disclosure will be described. The semiconductor device A10 includes a conductive member 10, a first bonding layer 21, a second bonding layer 22, a semiconductor element 30, and a sealing resin 40. The semiconductor device A10 is in the form of a resin package that is surface-mounted on a wiring board. The resin package form is a QFN (quad flat non-leaded package) in which a plurality of leads do not protrude from the sealing resin 40. Here, for convenience of understanding, FIG. 1 shows through the sealing resin 40. FIG. 2 shows through the first bonding layer 21, the second bonding layer 22, and the semiconductor element 30 with respect to FIG. 1 for convenience of understanding. In FIG. 1, the penetrated sealing resin 40 is shown by an imaginary line (two-dot chain line). In FIG. 2, each of the penetrated semiconductor element 30 and the sealing resin 40 is shown by an imaginary line. Further, in FIG. 2, each of the VII-VII line and the VIII-VIII line is shown by a one-dot chain line.

[0011] In the description of the semiconductor device A10, for convenience, the normal direction of the mounting surface 111 of the main part 11 described later is referred to as the "first direction z". A direction orthogonal to the first direction z is referred to as the "second direction x". A direction orthogonal to each of the first direction z and the second direction x is referred to as the "third direction y". As shown in FIG. 3, the semiconductor device A10 is rectangular when viewed in the first direction z.

[0012] As shown in FIGS. 6 to 8, the sealing resin 40 covers a part of the conductive member 10 and the semiconductor element 30. The sealing resin 40 has electrical insulation. As an example of the material of the sealing resin 40, a black epoxy resin can be mentioned.

[0013] As shown in Figures 4 to 8, the sealing resin 40 has a top surface 41, a bottom surface 42, two first side surfaces 43, and two second side surfaces 44. The top surface 41 and the bottom surface 42 face opposite each other in the first direction z. Of these, the bottom surface 42 faces away from the side on which the semiconductor element 30 is located relative to the conductive member 10 in the first direction z. The two first side surfaces 43 face opposite each other in the second direction x. The two second side surfaces 44 face opposite each other in the third direction y. The two first side surfaces 43 and the two second side surfaces 44 are located between the top surface 41 and the bottom surface 42 in the first direction z.

[0014] As shown in Figures 6 to 8, the conductive member 10 is equipped with a semiconductor element 30. The conductive member 10 constitutes a conductive path between the semiconductor element 30 and the wiring board on which the semiconductor device A10 is mounted.

[0015] As shown in Figures 1 to 3, the conductive member 10 includes a plurality of first terminals 10A, a plurality of second terminals 10B, and four third terminals 10C. In a direction perpendicular to the first direction z, any of the plurality of first terminals 10A and any of the plurality of second terminals 10B are separated from each other. The plurality of first terminals 10A consists of two groups of terminals located on either side of the semiconductor device A10 in the second direction x. Each of these two groups of terminals is arranged along the third direction y. The plurality of second terminals 10B consists of two groups of terminals located on opposite sides of each other in the third direction y, with the plurality of first terminals 10A in between. These two groups of terminals are arranged along the second direction x. The dimension of each of the plurality of first terminals 10A in the second direction x is greater than the dimension of each of the plurality of second terminals 10B in the third direction y. Viewed in the first direction z, the four third terminals 10C are located at the four corners of the semiconductor device A10.

[0016] As shown in Figures 2, 3, 5, 6, and 8, each of the plurality of first terminals 10A has a main portion 11. Each main portion 11 of the plurality of first terminals 10A contains copper (Cu). Therefore, each main portion 11 of the plurality of first terminals 10A contains metal. Each main portion 11 of the plurality of first terminals 10A is obtained from a lead frame. Each main portion 11 of the plurality of first terminals 10A has a mounting surface 111, a mounting surface 112, and an end surface 113. The mounting surface 111 faces the same side as the top surface 41 of the sealing resin 40 in a first direction z. The mounting surface 111 is covered by the sealing resin 40. The mounting surface 112 faces the opposite side from the mounting surface 111 in a first direction z. The mounting surface 112 is exposed from the bottom surface 42 of the sealing resin 40. Viewed in the first direction z, the mounting surface 111 includes a region that overlaps with the mounting surface 112 and a region that extends outward from the mounting surface 112. The end face 113 faces the second direction x. The end face 113 is exposed from one of the two first side surfaces 43 of the sealing resin 40.

[0017] As shown in Figures 2, 6, and 8, each of the plurality of first terminals 10A has a plurality of first metal layers 12. The plurality of first metal layers 12 are laminated on the mounting surface 111 of the main portion 11 of any of the plurality of first terminals 10A. Therefore, the plurality of first metal layers 12 are laminated on one side in the first direction z of the main portion 11 of any of the plurality of first terminals 10A. Each of the plurality of first metal layers 12 contains, for example, nickel (Ni). In addition, each of the plurality of first metal layers 12 may contain nickel, palladium (Pd), and gold (Au). The metallic elements contained in the plurality of first metal layers 12 are different from the metallic elements contained in the main portion 11 of each of the plurality of first terminals 10A. The plurality of first metal layers 12 are formed by electroplating the main portion 11 of any of the plurality of first terminals 10A.

[0018] As shown in Figures 9 and 10, each of the multiple first metal layers 12 has a first bonding surface 101 and an end surface 12A. The first bonding surface 101 faces the same side as the mounting surface 111 of each of the main parts 11 of the multiple first terminals 10A in the first direction z. Therefore, in the semiconductor device A10, the first bonding surface 101 is located between the main part 11 of any of the multiple first terminals 10A and the semiconductor element 30 in the first direction z. The end surface 12A faces in a direction perpendicular to the first direction z. Viewed in the first direction z, each of the multiple first metal layers 12 is circular in shape. However, the shape of each of the multiple first metal layers 12 in plan view can be various shapes other than circular, such as rectangular.

[0019] As shown in Figures 2-4, 7 and 8, each of the plurality of second terminals 10B has a main portion 11. Each of the plurality of second terminals 10B has a main portion 11 containing copper. Therefore, each of the plurality of second terminals 10B has a main portion 11 containing metal. Each of the plurality of second terminals 10B has a main portion 11, a mounting surface 112 and an end surface 113. The mounting surface 111 faces the same side as the top surface 41 of the sealing resin 40 in a first direction z. The mounting surface 111 is covered by the sealing resin 40. The mounting surface 112 faces the opposite side from the mounting surface 111 in a first direction z. The mounting surface 112 is exposed from the bottom surface 42 of the sealing resin 40. Viewed in the first direction z, the mounting surface 111 includes a region that overlaps with the mounting surface 112 and a region that extends outward from the mounting surface 112. The end face 113 faces in the third direction y. The end face 113 is exposed from one of the two second sides 44 of the sealing resin 40.

[0020] As shown in Figures 2, 7, and 8, each of the plurality of second terminals 10B has a second metal layer 13. The second metal layer 13 is laminated on the mounting surface 111 of the main portion 11 of any of the plurality of second terminals 10B. Therefore, the second metal layer 13 is laminated on one side in the first direction z of the main portion 11 of any of the plurality of second terminals 10B. Furthermore, the second metal layer 13 is separated from each of the plurality of first metal layers 12 of the plurality of first terminals 10A. The second metal layer 13 contains, for example, nickel. In addition, the second metal layer 13 may contain nickel, palladium, and gold. The metallic elements contained in the second metal layer 13 are different from the metallic elements contained in each of the main portions 11 of the plurality of second terminals 10B. Furthermore, the metallic elements contained in the second metal layer 13 are the same as the metallic elements contained in each of the plurality of first metal layers 12 of the plurality of first terminals 10A. The second metal layer 13 is formed by electroplating the main portion 11 of one of the multiple second terminals 10B.

[0021] As shown in Figures 11 and 12, the second metal layer 13 has a second bonding surface 102 and an end surface 13A. The second bonding surface 102 faces the same side as the mounting surface 111 of each main portion 11 of the plurality of second terminals 10B in the first direction z. Therefore, in the semiconductor device A10, the second bonding surface 102 is located between the main portion 11 of any of the plurality of second terminals 10B and the semiconductor element 30 in the first direction z. The end surface 13A faces in a direction perpendicular to the first direction z. Viewed in the first direction z, the second metal layer 13 is circular. However, the shape of the second metal layer 13 in plan view can be various shapes other than circular, such as rectangular.

[0022] As shown in Figures 10 and 12, the dimension t1 in the first direction z of each of the multiple first metal layers 12 is greater than the dimension t2 in the first direction z of the second metal layer 13.

[0023] As shown in Figures 2 to 5 and Figure 7, each of the four third terminals 10C has a main body 11. Each of the four main bodies 11 of the third terminals 10C contains copper. Therefore, each of the four main bodies 11 of the third terminals 10C contains metal. Each of the four main bodies 11 of the third terminals 10C is obtained from a lead frame. Each of the four main bodies 11 of the third terminals 10C has a mounting surface 111, a mounting surface 112, and two end faces 113. The mounting surface 111 faces the same side as the top surface 41 of the encapsulating resin 40 in a first direction z. The mounting surface 111 is covered by the encapsulating resin 40. The mounting surface 112 faces the opposite side from the mounting surface 111 in a first direction z. The mounting surface 112 is exposed from the bottom surface 42 of the encapsulating resin 40. One of the two end faces 113 faces in the second direction x and is exposed from either of the two first sides 43. The other end face 113 faces in the third direction y and is exposed from either of the two second sides 44.

[0024] As shown in Figures 2 and 7, each of the four third terminals 10C has a second metal layer 13. The second metal layer 13 is laminated on the mounting surface 111 of the main portion 11 of the four third terminals 10C. The configuration of the second metal layer 13 is the same as the configuration of the second metal layer 13 of each of the multiple second terminals 10B described above.

[0025] As shown in Figures 6 to 8, the semiconductor element 30 is electrically bonded to the conductive member 10 by a flip-chip junction. As a result, the semiconductor element 30 is electrically connected to the conductive member 10. As shown in Figures 6 to 8, 10 and 12, the semiconductor element 30 has an element surface 301, a main body 31, a plurality of first pads 32, a plurality of second pads 33, a passivation film 34, a protective film 35, a plurality of first electrodes 36, and a plurality of second electrodes 37.

[0026] As shown in Figures 6 to 8, the element surface 301 faces the conductive member 10. As shown in Figures 10 and 12, the element surface 301 is included in the protective film 35.

[0027] The main body 31 constitutes the main part of the semiconductor element 30. The main body 31 includes a semiconductor substrate and a semiconductor layer laminated on the semiconductor substrate. The semiconductor substrate includes, for example, silicon (Si). The semiconductor layer is located between the conductive member 10 and the semiconductor substrate in the first direction z.

[0028] Multiple first pads 32 are individually and electrically connected to multiple first electrodes 36. As shown in Figure 10, multiple first pads 32 are in contact with the main body 31. Multiple first pads 32 are electrically connected to the main body 31.

[0029] Multiple second pads 33 are individually and electrically connected to multiple second electrodes 37. As shown in Figure 12, multiple second pads 33 are in contact with the main body 31. Multiple second pads 33 are electrically connected to the main body 31.

[0030] As shown in Figures 10 and 12, the passivation film 34 is located between the main body 31 and the conductive member 10 in a first direction z, and is laminated on the main body 31. The passivation film 34 has electrical insulating properties. The passivation film 34 includes, for example, at least one of silicon oxide (SiO2) and silicon nitride (Si3N4). The passivation film 34 covers a portion of each of the plurality of first pads 32 and a portion of each of the plurality of second pads 33.

[0031] As shown in Figures 10 and 12, the protective film 35 is located between the passivation film 34 and the conductive member 10 in the first direction z, and is laminated on the passivation film 34. The protective film 35 is electrically insulating. The protective film 35 contains, for example, polyimide. The protective film 35 is provided with a plurality of openings 351 that penetrate in the first direction z. From each of the plurality of openings 351, one of the plurality of first pads 32 or one of the plurality of second pads 33 is exposed.

[0032] As shown in Figures 6 and 8, the plurality of first electrodes 36 protrude from the element surface 301 of the semiconductor element 30 toward the conductive member 10. Each of the plurality of first electrodes 36 is electrically connected to the main body 31 via one of the plurality of first pads 32. As shown in Figure 9, each of the plurality of first electrodes 36 is cylindrical when viewed in the first direction z. However, the shape of each of the plurality of first electrodes 36 in plan view can be circular, rectangular, or various other shapes. The plurality of first electrodes 36 include, for example, copper. As shown in Figure 10, each of the plurality of first electrodes 36 is electrically bonded to one of the plurality of first metal layers 12 of each of the plurality of first terminals 10A. A portion of each of the plurality of first electrodes 36 is individually housed in a plurality of openings 351 of the protective film 35.

[0033] As shown in Figure 10, the first bonding layer 21 electrically bonds one of the first bonding surfaces 101 of each of the multiple first metal layers 12 of the multiple first terminals 10A to one of the multiple first electrodes 36 facing the first bonding surface 101. The first bonding layer 21 contains a metal element. For example, the first bonding layer 21 contains tin (Sn) and silver (Ag). In addition, the first bonding layer 21 may contain tin and antimony (Sb), or it may be a sintered body of metal particles. These metal particles may contain silver, for example. In each of the multiple first metal layers 12 of the multiple first terminals 10A, the end face 12A of the first metal layer 12 is exposed from the first bonding layer 21.

[0034] As shown in Figures 7 and 8, the plurality of second electrodes 37 protrude from the element surface 301 of the semiconductor element 30 toward the conductive member 10. Each of the plurality of second electrodes 37 is electrically connected to the main body 31 via one of the plurality of second pads 33. As shown in Figure 11, each of the plurality of second electrodes 37 is cylindrical when viewed in the first direction z. However, the shape of each of the plurality of second electrodes 37 in plan view can be circular, rectangular, or various other shapes. The plurality of second electrodes 37 include, for example, copper. As shown in Figure 12, each of the plurality of second electrodes 37 is electrically bonded to one of the second metal layers 13 of each of the plurality of second terminals 10B and one of the second metal layers 13 of each of the four third terminals 10C. A portion of each of the plurality of second electrodes 37 is individually housed in one of the plurality of openings 351 of the protective film 35.

[0035] As shown in Figure 12, the second bonding layer 22 electrically bonds one of the second bonding surfaces 102 of each of the second metal layers 13 of the multiple second terminals 10B to one of the multiple second electrodes 37 facing that second bonding surface 102. The second bonding layer 22 contains a metal element. The metal element contained in the second bonding layer 22 is the same as the metal element contained in the first bonding layer 21. In the second metal layer 13 of any of the multiple second terminals 10B, the end face 13A of the second metal layer 13 is exposed from the second bonding layer 22.

[0036] As shown in Figures 9 and 11, the area of ​​each of the multiple first electrodes 36 is larger than the area of ​​each of the multiple second electrodes 37 when viewed in the first direction z. As shown in Figures 10 and 12, the dimension L1 of each of the multiple first electrodes 36 in the first direction z is smaller than the dimension L2 of each of the multiple second electrodes 37 in the first direction z.

[0037] As shown in Figures 10 and 12, in the first direction z, the first junction surface 101 of any of the multiple first metal layers 12 of each of the multiple first terminals 10A is located closer to the element surface 301 of the semiconductor element 30 than the second junction surface 102 of the second metal layer 13 of any of the multiple second terminals 10B.

[0038] Next, we will explain the effects and benefits of semiconductor device A10.

[0039] The semiconductor device A10 comprises a conductive member 10 and a semiconductor element 30 located on one side of the conductive member 10 in a first direction z. The semiconductor element 30 has an element surface 301, a first electrode 36, and a second electrode 37. In the first direction z, the area of ​​the first electrode 36 is larger than the area of ​​the second electrode 37. The dimension L1 of the first electrode 36 in the first direction z is smaller than the dimension L2 of the second electrode 37 in the first direction z. The conductive member 10 has a first bonding surface 101 to which the first electrode 36 is conductively bonded, and a second bonding surface 102 to which the second electrode 37 is conductively bonded. In the first direction z, the first bonding surface 101 is located closer to the element surface 301 than the second bonding surface 102. By adopting this configuration, the difference between the distance in the first direction z from the first bonding surface 101 to the element surface 301 and the distance in the first direction z from the second bonding surface 102 to the element surface 301 can be made smaller. This prevents the gap between the first bonding surface 101 and the first electrode 36 from becoming excessively large compared to the gap between the second bonding surface 102 and the second electrode 37 when the semiconductor element 30 is conductively bonded to the conductive member 10. Furthermore, it suppresses the tilting of the semiconductor element 30 around a direction perpendicular to the first direction z when the semiconductor element 30 is conductively bonded to the conductive member 10. Therefore, with this configuration, in a semiconductor device A10 equipped with a first electrode 36 and a second electrode 37 of different sizes, it becomes possible to more firmly conductively bond each of the first electrode 36 and the second electrode 37 to the conductive member 10.

[0040] The conductive member 10 has a main portion 11 containing metal, and a first metal layer 12 and a second metal layer 13 laminated on one side of the main portion 11 in the first direction z. The first metal layer 12 includes a first bonding surface 101. The second metal layer 13 includes a second bonding surface 102. By adopting this configuration, the conductive member 10 having the first bonding surface 101 and the second bonding surface 102 can be easily formed by electroplating the lead frame.

[0041] The dimension t1 of the first metal layer 12 in the first direction z is greater than the dimension t2 of the second metal layer 13 in the first direction z. By adopting this configuration, even if the mounting surface 111 of the main part 11 facing one side in the first direction z is flat, the positions of the first joining surface 101 and the second joining surface 102 in the first direction z can be set to a predetermined value.

[0042] The semiconductor device A10 further comprises a first bonding layer 21 that conductively bonds a first bonding surface 101 to the first electrode 36 of the semiconductor element 30, and a second bonding layer 22 that conductively bonds a second bonding surface 102 to the second electrode 37 of the semiconductor element 30. The first bonding layer 21 and the second bonding layer 22 contain the same metal element. By adopting this configuration, the materials of the first bonding layer 21 and the second bonding layer 22 can be made the same, thereby suppressing an increase in the manufacturing cost of the semiconductor device A10.

[0043] The semiconductor device A10 further comprises a sealing resin 40 covering the semiconductor element 30. The main portion 11 of the conductive member 10 each has a mounting surface 112 and an end surface 113 that are exposed from the sealing resin 40. The end surface 113 faces in a direction perpendicular to the first direction z. With this configuration, when the semiconductor device A10 is mounted on a wiring board, solder also adheres to the end surface 113. This improves the mounting strength of the semiconductor device A10 to the wiring board.

[0044] [Second Embodiment] A semiconductor device A20 according to the second embodiment of this disclosure will be described based on Figures 13 and 14. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, Figure 13 corresponds to Figure 9, which shows the semiconductor device A10.

[0045] In semiconductor device A20, the configuration of each of the multiple first metal layers 12 of the multiple first terminals 10A differs from the configuration of the semiconductor device A10.

[0046] As shown in Figures 13 and 14, each of the plurality of first metal layers 12 has a first layer 121 and a second layer 122. The first layer 121 is laminated on the mounting surface 111 of the main portion 11 of any of the plurality of first metal layers 12. The second layer 122 is located on the opposite side of the main portion 11 of any of the plurality of first metal layers 12, with the first layer 121 in between, and is laminated on the first layer 121. The second layer 122 includes a first bonding surface 101. The first layer 121 and the second layer 122 contain the same metal element. Alternatively, the first layer 121 and the second layer 122 may contain different metal elements. One example of this case is when the first layer 121 contains nickel and the second layer 122 contains palladium and gold.

[0047] As shown in Figures 13 and 14, in view of the first direction z, the second layer 122 is located inward of the first layer 121. In view of the first direction z, the first layer 121 includes a portion that extends outward from any of the multiple first electrodes 36 of the semiconductor element 30 facing the first junction surface 101. In view of the first direction z, the periphery of any of the multiple first electrodes 36 facing the first junction surface 101 overlaps with the periphery of the second layer 122.

[0048] As shown in Figures 13 and 14, the first layer 121 has a first end face 121A that faces in a direction perpendicular to the first direction z. The first end face 121A is exposed from the first bonding layer 21. The second layer 122 has a second end face 122A that faces in a direction perpendicular to the first direction z. The second end face 122A is covered by the first bonding layer 21. As shown in Figure 14, the dimension of the second layer 122 in the first direction z is greater than the dimension of the first layer 121 in the first direction z. The dimension of the first layer 121 in the first direction z is equal to the dimension of the second metal layer 13 of any of the multiple second terminals 10B in the first direction z.

[0049] Next, a semiconductor device A21 according to a modified example of the second embodiment of the present disclosure will be described, as shown in Figures 15 and 16. Here, Figure 15 corresponds to Figure 13, which shows semiconductor device A20.

[0050] In semiconductor device A21, the configuration of each of the multiple first metal layers 12 of the multiple first terminals 10A differs from the configuration of the same in semiconductor device A20. As shown in Figures 15 and 16, in any of the multiple first metal layers 12 of each of the multiple first terminals 10A, the second layer 122 is located inward from any of the multiple first electrodes 36 of the semiconductor element 30 facing the first junction surface 101, when viewed in the first direction z.

[0051] Next, we will explain the effects and benefits of semiconductor device A20.

[0052] The semiconductor device A20 comprises a conductive member 10 and a semiconductor element 30 located on one side of the conductive member 10 in a first direction z. The semiconductor element 30 has an element surface 301, a first electrode 36, and a second electrode 37. Viewed in the first direction z, the area of ​​the first electrode 36 is larger than the area of ​​the second electrode 37. The dimension L1 of the first electrode 36 in the first direction z is smaller than the dimension L2 of the second electrode 37 in the first direction z. The conductive member 10 has a first bonding surface 101 to which the first electrode 36 is conductively bonded, and a second bonding surface 102 to which the second electrode 37 is conductively bonded. In the first direction z, the first bonding surface 101 is located closer to the element surface 301 than the second bonding surface 102. Therefore, according to this configuration, even in the semiconductor device A20, which has a configuration in which the first electrode 36 and the second electrode 37 are of different sizes, it is possible to more firmly conductively bond each of the first electrode 36 and the second electrode 37 to the conductive member 10. Furthermore, by having a configuration in common with the semiconductor device A10, the semiconductor device A20 can achieve the same effects as the semiconductor device A10.

[0053] In the semiconductor device A20, the first metal layer 12 of the conductive member 10 has a first layer 121 and a second layer 122. The second layer 122 includes the first bonding surface 101 of the conductive member 10. With this configuration, the first layer 121 and the second layer 122 are formed in separate processes during the formation of the first metal layer 12. This allows for more precise setting of the position of the first bonding surface 101 in the first direction z.

[0054] Viewed in the first direction z, the second layer 122 of the first metal layer 12 is located inward from the first layer 121 of the first metal layer 12. Viewed in the first direction z, the first layer 121 includes a portion that extends outward from the first electrode 36 of the semiconductor element 30. By adopting this configuration, the surface area of ​​the first metal layer 12 to which the first bonding layer 21 is attached is increased, thereby improving the bonding strength of the first electrode 36 of the semiconductor element 30 to the conductive member 10.

[0055] The first layer 121 of the first metal layer 12 has a first end face 121A that is exposed from the first bonding layer 21. The second layer 122 of the first metal layer 12 has a second end face 122A that is covered by the first bonding layer 21. With this configuration, the force that causes the first bonding layer 21 to leak outward from the first layer 121 when viewed in the first direction z is effectively reduced by the surface tension of the first bonding layer 21 relative to the first metal layer 12. This effectively prevents bonding defects of the first electrode 36 of the semiconductor element 30 to the first metal layer 12, while improving the bonding strength of the first electrode 36 to the first metal layer 12.

[0056] [Third Embodiment] A semiconductor device A30 according to the third embodiment of this disclosure will be described based on Figures 17 and 18. In these figures, elements that are the same as or similar to those in the semiconductor devices A10 and A20 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, Figure 17 corresponds to Figure 9, which shows the semiconductor device A10.

[0057] In semiconductor device A30, the configuration of each of the multiple first metal layers 12 of the multiple first terminals 10A differs from the configuration of the semiconductor device A20.

[0058] As shown in Figures 17 and 18, each of the plurality of first metal layers 12 has a first layer 121 and a second layer 122. The first layer 121 has a first opening 121B that penetrates in a first direction z. The mounting surface 111 of the main portion 11 of any of the plurality of first terminals 10A is exposed through the first opening 121B. The second layer 122 has a second opening 122B that opens from the first bonding surface 101. The second opening 122B is recessed from the first bonding surface 101. Viewed in the first direction z, the second opening 122B overlaps the first opening 121B. The second layer 122 includes a portion housed in the first opening 121B. This portion is in contact with the first bonding surface 101. A portion of the first bonding layer 21 is housed in the second opening 122B.

[0059] Next, we will explain the effects and benefits of semiconductor device A30.

[0060] The semiconductor device A30 comprises a conductive member 10 and a semiconductor element 30 located on one side of the conductive member 10 in a first direction z. The semiconductor element 30 has an element surface 301, a first electrode 36, and a second electrode 37. In the first direction z, the area of ​​the first electrode 36 is larger than the area of ​​the second electrode 37. The dimension L1 of the first electrode 36 in the first direction z is smaller than the dimension L2 of the second electrode 37 in the first direction z. The conductive member 10 has a first bonding surface 101 to which the first electrode 36 is conductively bonded, and a second bonding surface 102 to which the second electrode 37 is conductively bonded. In the first direction z, the first bonding surface 101 is located closer to the element surface 301 than the second bonding surface 102. Therefore, according to this configuration, even in the semiconductor device A30, which has a configuration in which the first electrode 36 and the second electrode 37 are of different sizes, it is possible to more firmly conductively bond each of the first electrode 36 and the second electrode 37 to the conductive member 10. Furthermore, by having a configuration in common with the semiconductor device A10, the semiconductor device A30 will have the same effects and advantages as the semiconductor device A10.

[0061] In the semiconductor device A30, the first metal layer 12 of the conductive member 10 has a first layer 121 and a second layer 122. The second layer 122 has a second opening 122B that opens from the first bonding surface 101. A portion of the first bonding layer 21 is housed in the second opening 122B. With this configuration, the first bonding layer 21 exhibits an anchoring effect with respect to the first metal layer 12. This further improves the bonding strength of the first electrode 36 of the semiconductor element 30 to the conductive member 10.

[0062] [Fourth Embodiment] A semiconductor device A40 according to the fourth embodiment of this disclosure will be described based on Figures 19 and 20. In these figures, elements that are the same as or similar to those in the aforementioned semiconductor devices A10 and A20 are denoted by the same reference numerals, and redundant explanations are omitted. Here, Figure 19 corresponds to Figure 9, which shows the semiconductor device A10.

[0063] In semiconductor device A40, the configuration of each of the multiple first metal layers 12 of the multiple first terminals 10A differs from the configuration of semiconductor device A20.

[0064] As shown in Figures 19 and 20, each of the multiple first metal layers 12 has a first layer 121 and a second layer 122. The second layer 122 has a second opening 122B that opens from the first bonding surface 101. The second opening 122B penetrates the second layer 122 in a first direction z. The first layer 121 is exposed through the second opening 122B. A portion of the first bonding layer 21 is housed in the second opening 122B and is in contact with the portion of the first layer 121 that is exposed through the second opening 122B.

[0065] Next, we will explain the effects and benefits of semiconductor device A40.

[0066] The semiconductor device A40 comprises a conductive member 10 and a semiconductor element 30 located on one side of the conductive member 10 in a first direction z. The semiconductor element 30 has an element surface 301, a first electrode 36, and a second electrode 37. In the first direction z, the area of ​​the first electrode 36 is larger than the area of ​​the second electrode 37. The dimension L1 of the first electrode 36 in the first direction z is smaller than the dimension L2 of the second electrode 37 in the first direction z. The conductive member 10 has a first bonding surface 101 to which the first electrode 36 is conductively bonded, and a second bonding surface 102 to which the second electrode 37 is conductively bonded. In the first direction z, the first bonding surface 101 is located closer to the element surface 301 than the second bonding surface 102. Therefore, according to this configuration, even in the semiconductor device A40, which has a configuration in which the first electrode 36 and the second electrode 37 are of different sizes, it is possible to more firmly conductively bond each of the first electrode 36 and the second electrode 37 to the conductive member 10. Furthermore, by having a configuration in common with the semiconductor device A10, the semiconductor device A40 can achieve the same effects as the semiconductor device A10.

[0067] In semiconductor device A40, the first metal layer 12 of the conductive member 10 has a first layer 121 and a second layer 122. The second layer 122 has a second opening 122B that opens from the first bonding surface 101. A portion of the first bonding layer 21 is housed in the second opening 122B. By adopting this configuration, in semiconductor device A40 as well, the first bonding layer 21 exhibits an anchoring effect with respect to the first metal layer 12, thereby further improving the bonding strength of the first electrode 36 of the semiconductor element 30 to the conductive member 10.

[0068] In the first metal layer 12 of the semiconductor device A40, the first bonding layer 21 is in contact with the portion of the first layer 121 that is exposed through the second opening 122B of the second layer 122. By adopting this configuration, the surface area of ​​the first metal layer 12 to which the first bonding layer 21 is attached is further increased, thereby more effectively improving the bonding strength of the first electrode 36 of the semiconductor element 30 to the conductive member 10.

[0069] [Fifth Embodiment] A semiconductor device A50 according to the fifth embodiment of this disclosure will be described based on Figures 21 to 25. In these figures, elements that are the same as or similar to those in the semiconductor devices A10 and A20 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for the sake of understanding, Figure 21 shows the first junction layer 21, the second junction layer 22, the semiconductor element 30, and the encapsulating resin 40 through which light has been transmitted. In Figure 21, the semiconductor element 30 and the encapsulating resin 40 that have been transmitted are shown by dashed lines. Furthermore, in Figure 21, each of the lines XXIII-XXIII is shown by a dashed line.

[0070] In semiconductor device A50, the configuration of the conductive member 10 differs from that of semiconductor device A10.

[0071] As shown in Figures 21 and 22, each of the multiple first terminals 10A has multiple first recesses 14 instead of multiple first metal layers 12. Each of the multiple first recesses 14 is recessed from the mounting surface 111 of the main portion 11 of any of the multiple first terminals 10A. The first bonding surface 101 of the conductive member 10 defines one of the multiple first recesses 14.

[0072] As shown in Figures 22 and 24, a portion of any of the multiple first electrodes 36 of the semiconductor element 30 is housed in any of the multiple first recesses 14 of each of the multiple first terminals 10A. The first bonding layer 21 is housed in any of the multiple first recesses 14. As a result, any of the multiple first electrodes 36 faces the first bonding surface 101 and is electrically bonded to the first bonding surface 101 via the first bonding layer 21.

[0073] As shown in Figures 21 and 23, each of the multiple second terminals 10B and the four third terminals 10C has a second recess 15 instead of the second metal layer 13. The second recess 15 is recessed from the mounting surface 111 of the main portion 11 of any of the multiple second terminals 10B or any of the four third terminals 10C. The second bonding surface 102 of the conductive member 10 defines the second recess 15.

[0074] As shown in Figures 23 and 25, a portion of any of the multiple second electrodes 37 of the semiconductor element 30 is housed in a second recess 15 of any of the multiple second terminals 10B or any of the four third terminals 10C. The second junction layer 22 is housed in the second recess 15. As a result, any of the multiple second electrodes 37 faces the second junction surface 102 and is electrically bonded to the second junction surface 102 via the second junction layer 22.

[0075] As shown in Figures 24 and 25, in the first direction z, the dimension in the first direction z of any of the multiple first recesses 14 of each of the multiple first terminals 10A is smaller than the dimension in the first direction z of any of the second recesses 15 of any of the multiple second terminals 10B. As a result, in the semiconductor device A50 as well, in the first direction z, the first bonding surface 101 of any of the multiple first terminals 10A is located closer to the element surface 301 of the semiconductor element 30 than the second bonding surface 102 of any of the multiple second terminals 10B.

[0076] Next, we will explain the effects and benefits of semiconductor device A50.

[0077] The semiconductor device A50 comprises a conductive member 10 and a semiconductor element 30 located on one side of the conductive member 10 in a first direction z. The semiconductor element 30 has an element surface 301, a first electrode 36, and a second electrode 37. In the first direction z, the area of ​​the first electrode 36 is larger than the area of ​​the second electrode 37. The dimension L1 of the first electrode 36 in the first direction z is smaller than the dimension L2 of the second electrode 37 in the first direction z. The conductive member 10 has a first bonding surface 101 to which the first electrode 36 is conductively bonded, and a second bonding surface 102 to which the second electrode 37 is conductively bonded. In the first direction z, the first bonding surface 101 is located closer to the element surface 301 than the second bonding surface 102. Therefore, according to this configuration, even in the semiconductor device A50, which has a configuration in which the first electrode 36 and the second electrode 37 are of different sizes, it is possible to more firmly conductively bond each of the first electrode 36 and the second electrode 37 to the conductive member 10. Furthermore, by having a configuration in common with the semiconductor device A10, the semiconductor device A50 can achieve the same effects as the semiconductor device A10.

[0078] This disclosure is not limited to the embodiments described above. The specific configuration of each part of this disclosure can be modified in various ways.

[0079] This disclosure includes embodiments described in the following appendix. [Note 1] Conductive member (10), A semiconductor element (30) is located on one side of the conductive member in the first direction (z) and is electrically conductive to the conductive member, The semiconductor element has an element surface (301) facing the conductive member, and a first electrode (36) and a second electrode (37) protruding from the element surface. Viewed in the first direction, the area of ​​the first electrode is larger than the area of ​​the second electrode. The dimension (L1) of the first electrode in the first direction is smaller than the dimension (L2) of the second electrode in the first direction. The conductive member has a first bonding surface (101) to which the first electrode is electrically bonded, and a second bonding surface (102) to which the second electrode is electrically bonded. A semiconductor device (A10) wherein, in the first direction, the first bonding surface is located closer to the element surface than the second bonding surface. [Note 2] The conductive member (10) has a main part (11) containing metal, and a first metal layer (12) and a second metal layer (13) laminated on one side of the main part in the first direction (z). The first metal layer includes the first bonding surface (101), The semiconductor device (A10) described in Appendix 1 includes the second metal layer, which includes the second bonding surface (102). [Note 3] The semiconductor device (A10) as described in Appendix 2, wherein the dimension (t1) of the first metal layer (12) in the first direction is greater than the dimension (t2) of the second metal layer (13) in the first direction. [Note 4] A first bonding layer (21) conductively bonding the first bonding surface (101) and the first electrode (36), The present invention further comprises a second bonding layer (22) that electrically bonds the second bonding surface (102) and the second electrode (37), The semiconductor device (A10) described in Appendix 3, wherein the first bonding layer and the second bonding layer contain the same metal element to each other. [Note 5] The first metal layer (12) has a first layer (121) laminated on the main part (11), and a second layer (122) located on the opposite side of the main part with the first layer in between, and laminated on the first layer. The second layer is the semiconductor device (A20) described in Appendix 4, including the first bonding surface (101). [Note 6] The semiconductor device (A20) described in Appendix 5, wherein, viewed in the first direction (z), the second layer (122) is located inward of the first layer (121). [Note 7] The semiconductor device (A20) described in Appendix 6, wherein the dimension of the second layer (122) in the first direction (z) is greater than the dimension of the first layer (121) in the first direction. [Note 8] The semiconductor device (A20) described in Appendix 6, wherein, viewed in the first direction (z), the first layer (121) includes a portion that extends outward from the first electrode (36). [Note 9] The semiconductor device (A20) described in Appendix 8, wherein, when viewed in the first direction (z), the periphery of the first electrode (36) overlaps with the periphery of the second layer (122). [Note 10] The semiconductor device (A21) described in Appendix 8, wherein, viewed in the first direction (z), the second layer (122) is located inward of the first electrode (36). [Note 11] The second layer (122) has a second end face (122A) that faces in a direction perpendicular to the first direction (z), The semiconductor device (A20) described in Appendix 8, wherein the second end face is covered by the first bonding layer (21). [Note 12] The first layer (121) has a first end face (121A) that faces in a direction perpendicular to the first direction (z), The semiconductor device (A20) described in Appendix 11, wherein the first end face is exposed from the first bonding layer (21). [Note 13] The second layer (122) has a second opening (122B) that opens from the first bonding surface (101), A portion of the first bonding layer (21) is housed in the second opening, as described in Appendix 11, for the semiconductor device (A30, A40). [Note 14] The first layer (121) has a first opening (121B) that penetrates in the first direction (z), Viewed in the first direction, the second opening (122B) overlaps the first opening. The semiconductor device (A30) described in Appendix 13, wherein the second opening is recessed from the first bonding surface (101). [Note 15] The semiconductor device (A40) described in Appendix 13, wherein the second opening (122B) penetrates in the first direction (z). [Note 16] The semiconductor device (A40) described in Appendix 15, wherein the first bonding layer (21) is in contact with the portion of the first layer (121) exposed from the second opening (122B). [Note 17] The semiconductor element (30) is further covered by a sealing resin (40), The main portion (11) has a mounting surface (112) that faces the same side as the element surface (301) in the first direction (z), The aforementioned mounting surface is exposed from the sealing resin, and is a semiconductor device (A10) as described in any of appendices 2 to 16. [Note 18] The main portion (11) has an end face (113) that faces in a direction perpendicular to the first direction (z), The end face is exposed from the sealing resin (40) of the semiconductor device (A10) as described in Appendix 17. [Note 19] The main portion (11) includes a first terminal (10A) and a second terminal (10B) that are separated from each other in a direction perpendicular to the first direction (z), The first metal layer (12) is laminated on the first terminal, The second metal layer (13) is laminated on the second terminal, and is the semiconductor device (A10) as described in Appendix 17. [Note 20] The conductive member (10) has a mounting surface (111) facing the element surface (301), and a first recess (14) and a second recess (15) that are recessed from the mounting surface. The first bonding surface (101) defines the first recess, The semiconductor device (A50) described in Appendix 1, wherein the second bonding surface (102) defines the second recess. [Note 21] A portion of the first electrode (36) is housed in the first recess (14), A semiconductor device (A10) as described in Appendix 20, wherein a portion of the second electrode (37) is housed in the second recess (15). [Note 22] The semiconductor device (A10) described in Appendix 3, wherein the second metal layer (13) is separated from the first metal layer (12). [Note 23] Each of the first bonding layer (21) and the second bonding layer (22) contains tin, the semiconductor device (A10) as described in Appendix 4. [Note 24] The first metal layer (12) and the second metal layer (13) contain the same metal element as each other. The semiconductor device (A10) described in Appendix 4, wherein each of the first metal layer and the second metal layer contains a metal element different from the metal element contained in the main part (11). [Note 25] The main part (11) contains copper, Each of the first metal layer (12) and the second metal layer (13) contains nickel, the semiconductor device (A10) as described in Appendix 24. [Explanation of symbols]

[0080] A10~A50: Semiconductor equipment 10: Conductive member 10A, 10B, 10C: 1st terminal, 2nd terminal, 3rd terminal 11: Subject 101,102: 1st joint surface, 2nd joint surface 111: Mounting surface 112: Implementation aspects 113: End face 12: 1st metal layer 12A: End face 121: 1st layer 121A: First end surface 121B: 1st opening 122: 2nd layer 122A: 2nd end surface 122B: 2nd opening 13: Second metal layer 13A: End face 14,15: First recess, second recess 21, 22: 1st bonding layer, 2nd bonding layer 30: Semiconductor devices 301: Element surface 31: Main unit 32,33: Pad 1, Pad 2 34: Passivation membrane 35:Protective film 351:Aperture 36: 1st electrode 37:Second electrode 40: Sealing resin 41:Top surface 42: Bottom 43,44: 1st side, 2nd side L1, L2: Dimensions t1, t2: dimensions z,x,y: 1st direction, 2nd direction, 3rd direction

Claims

1. Conductive member and The device comprises a semiconductor element located on one side of the conductive member in the first direction and which conducts electricity to the conductive member, The semiconductor element has an element surface facing the conductive member, and a first electrode and a second electrode protruding from the element surface. Viewed in the first direction, the area of ​​the first electrode is larger than the area of ​​the second electrode. The dimension of the first electrode in the first direction is smaller than the dimension of the second electrode in the first direction. The conductive member has a first bonding surface to which the first electrode is electrically bonded, and a second bonding surface to which the second electrode is electrically bonded. A semiconductor device wherein, in the first direction, the first bonding surface is located closer to the element surface than the second bonding surface.

2. The conductive member has a main portion containing metal, and a first metal layer and a second metal layer laminated on one side of the main portion in the first direction. The first metal layer includes the first bonding surface, The semiconductor device according to claim 1, wherein the second metal layer includes the second bonding surface.

3. The semiconductor device according to claim 2, wherein the dimension of the first metal layer in the first direction is greater than the dimension of the second metal layer in the first direction.

4. A first bonding layer that electrically bonds the first bonding surface and the first electrode, The present invention further comprises a second bonding layer that electrically bonds the second bonding surface and the second electrode, The semiconductor device according to claim 3, wherein the first bonding layer and the second bonding layer contain the same metal element.

5. The first metal layer comprises a first layer laminated on the main portion and a second layer located on the opposite side of the main portion with the first layer in between, and laminated on the first layer. The semiconductor device according to claim 4, wherein the second layer includes the first bonding surface.

6. The semiconductor device according to claim 5, wherein, viewed in the first direction, the second layer is located inward of the first layer.

7. The semiconductor device according to claim 6, wherein the dimension of the second layer in the first direction is greater than the dimension of the first layer in the first direction.

8. The semiconductor device according to claim 6, wherein, viewed in the first direction, the first layer includes a portion that extends outward from the first electrode.

9. The semiconductor device according to claim 8, wherein, viewed in the first direction, the periphery of the first electrode overlaps with the periphery of the second layer.

10. The semiconductor device according to claim 8, wherein, viewed in the first direction, the second layer is located inward of the first electrode.

11. The second layer has a second end face that faces a direction perpendicular to the first direction, The semiconductor device according to claim 8, wherein the second end face is covered by the first bonding layer.

12. The first layer has a first end face that faces a direction perpendicular to the first direction, The semiconductor device according to claim 11, wherein the first end face is exposed from the first bonding layer.

13. The second layer has a second opening that opens from the first bonding surface, A portion of the first bonding layer is housed in the second opening, as described in claim 11.

14. The semiconductor device according to claim 13, wherein the second opening penetrates in the first direction.

15. The semiconductor device according to claim 14, wherein the first bonding layer is in contact with the portion of the first layer exposed from the second opening.

16. The first layer has a first opening that penetrates in the first direction, Viewed in the first direction, the second opening overlaps the first opening. The semiconductor device according to claim 13, wherein the second opening is recessed from the first bonding surface.

17. The semiconductor element further comprises a sealing resin covering the semiconductor element, The main portion has a mounting surface that faces the same side as the element surface in the first direction, The semiconductor device according to any one of claims 2 to 16, wherein the mounting surface is exposed from the sealing resin.

18. The main portion has an end face that faces a direction perpendicular to the first direction, The semiconductor device according to claim 17, wherein the end face is exposed from the sealing resin.

19. The main part includes a first terminal and a second terminal that are separated from each other in a direction perpendicular to the first direction, The first metal layer is laminated on the first terminal, The semiconductor device according to claim 17, wherein the second metal layer is laminated on the second terminal.

Images