Die bonding apparatus, die bonding method, and method for manufacturing semiconductor device

Abstract

The objective is to provide a technology that can improve the bond positioning accuracy of the die. [Solution] The die bonding apparatus comprises a first imaging device positioned between the pickup position and the bond position to photograph the die held in the collet from below, a second imaging device positioned at the bond position to photograph the die held in the collet and the substrate from above, and a control unit. The control unit is configured to (a) measure the positional relationship between the alignment mark provided on the die photographed by the first imaging device and the outer shape of the die, (b) measure the positional relationship between the reference mark provided on the substrate photographed by the second imaging device and the outer shape of the die, and (c) determine the positional relationship between the alignment mark and the reference mark based on the positional relationship between the alignment mark and the outer shape of the die and the positional relationship between the reference mark and the outer shape of the die, and to enable the alignment mark and the reference mark to be aligned.

Description

Technical Field

[0001] The present disclosure relates to a die bonding apparatus and is applicable to, for example, a die bonding apparatus that handles face - down dies.

Background Art

[0002] A die bonding apparatus (semiconductor manufacturing apparatus, mounting apparatus) has a bonder that picks up a die having bumps on its surface, which is divided from a wafer, turns the picked - up die over so that the surface faces down (face - down), and bonds it to a substrate (for example, Japanese Patent Laid - Open No. 2022 - 46979).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of the present disclosure is to provide a technique capable of improving the bonding position accuracy of a die. Other problems and novel features will become apparent from the description of this specification and the accompanying drawings.

Means for Solving the Problems

[0005] The outline of a representative aspect of the present disclosure is as follows. In other words, the die bonding apparatus comprises a first imaging device positioned between the pickup position and the bond position to photograph the die held in the collet from below, a second imaging device positioned at the bond position to photograph the die held in the collet and the substrate from above, and a control unit. The control unit is configured to (a) measure the positional relationship between the alignment marks provided on the die photographed by the first imaging device and the outer shape of the die, (b) measure the positional relationship between the reference marks provided on the substrate photographed by the second imaging device and the outer shape of the die, and (c) determine the positional relationship between the alignment marks and the reference marks based on the positional relationship between the alignment marks and the outer shape of the die and the positional relationship between the reference marks and the outer shape of the die, and to enable the alignment marks and the reference marks to be aligned. [Effects of the Invention]

[0006] According to this disclosure, the bond position accuracy of the die can be improved. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a diagram illustrating the configuration of a die bonding apparatus. [Figure 2] Figure 2 is a diagram illustrating the configuration of a die bonding apparatus. [Figure 3] Figure 3 is a diagram illustrating the configuration of a die bonding apparatus. [Figure 4] Figure 4 is a diagram illustrating the configuration of a die bonding apparatus. [Figure 5] Figures 5(a) and 5(b) illustrate the die as captured by the undervision camera. [Figure 6] Figures 6(a) and 6(b) illustrate the die and substrate as captured by the substrate recognition camera. [Figure 7] Figure 7 illustrates an example of the structure of a temporary crimping head. [Figure 8] Figures 8(a) to 8(d) illustrate other configurations of the collet that is attached to the temporary crimping head. [Figure 9] Figure 9 is a diagram illustrating a method for manufacturing a semiconductor device. [Figure 10] Figure 10 is a diagram illustrating the detailed steps of the pickup process. [Figure 11] Figure 11 is a diagram illustrating the detailed steps of the bonding process. [Figure 12] Figure 12 is a diagram illustrating the configuration of the die bonding apparatus in the second embodiment. [Figure 13] Figure 13 is a diagram illustrating the configuration of a die bonding apparatus in a third embodiment. [Modes for carrying out the invention]

[0008] The embodiments will be described below with reference to the drawings. However, for the sake of clarity, the following descriptions and drawings have been omitted and simplified as appropriate. Also, the same reference numerals are used for the same components, and repeated explanations may be omitted. Furthermore, in order to make the explanation clearer, the width, thickness, shape, etc. of each part may be represented schematically in the drawings, compared to the actual embodiment. In addition, the dimensional relationships of each element and the ratios of each element do not necessarily match between multiple drawings.

[0009] [Configuration of die bonding equipment] Figure 1 is a schematic top view showing an example of the configuration of a flip-chip bonder, which is an example of a die bonding apparatus. Figure 2 is a schematic front view of the area around the pickup section of the flip-chip bonder shown in Figure 1. Figure 3 is a schematic side view of the main crimping section of the bonding part of the flip-chip bonder shown in Figure 1. Figure 4 is a schematic side view of the temporary crimping section of the bonding part of the flip-chip bonder shown in Figure 1.

[0010] As shown in FIGS. 1 to 4, the flip chip bonder 1 generally includes a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a first bonding unit 40, a transfer unit 50, a substrate supply unit 60K, a substrate discharge unit 60H, a second bonding unit 70, and a control unit 80. The Y2 - Y1 direction (Y direction) is the front - rear direction of the flip chip bonder 1, the X2 - X1 direction (X direction) is the left - right direction, and the Z1 - Z2 direction (Z direction) is the up - down direction. The wafer supply unit 10 is arranged on the front side of the flip chip bonder 1, and the first bonding unit 40 is arranged on the rear side. Here, the X direction, Y direction, and Z direction are perpendicular to each other.

[0011] As shown in FIG. 1, the wafer supply unit 10 includes a wafer cassette lifter 11, a wafer holding stage 12, and a peeling unit 13.

[0012] The wafer cassette lifter 11 moves up and down a wafer cassette (not shown) in which a plurality of wafer rings WR are stored to the wafer transfer height. A wafer alignment chute (not shown) aligns the wafer rings WR supplied from the wafer cassette lifter 11. A wafer extractor (not shown) takes out the wafer ring WR from the wafer cassette and supplies it to the wafer holding stage 12, or takes it out from the wafer holding stage 12 and stores it in the wafer cassette.

[0013] A wafer W is adhered (stuck) on a dicing tape DT, and the wafer W is divided into a plurality of dies D. The dicing tape DT is held by the wafer ring WR. The wafer W is, for example, a semiconductor wafer or a glass wafer, and the die D as a workpiece is a semiconductor chip, a glass chip, or a MEMS (Micro Electro Mechanical Systems).

[0014] The wafer holding stage 12 moves in the X direction and the Y direction. Thereby, the wafer ring WR moves so that the die D to be picked up comes to a predetermined position of the peeling unit 13. Also, the wafer holding stage 12 rotates the wafer ring WR within the XY plane.

[0015] The peeling unit 13 moves in the vertical direction. The peeling unit 13 peels the die D from the dicing tape DT.

[0016] As shown in FIGS. 1 and 2, the pickup unit 20 includes a pickup head 21 and a wafer recognition camera 24.

[0017] The pickup head 21 is provided with a collet 22 that sucks and holds the peeled die D at its tip. The pickup head 21 picks up the die D from the wafer supply unit 10 and places it on the intermediate stage 31 with the surface (the side where patterns such as circuit patterns of the die D are formed) facing up. The pickup head 21 moves in the Z direction, X direction, and Y direction.

[0018] The wafer recognition camera 24 confirms the pickup position of the die D picked up from the wafer W or performs an appearance inspection of the die D.

[0019] As shown in FIGS. 1 and 2, the intermediate stage unit 30 includes an intermediate stage 31 on which the die D is placed and a stage recognition camera 34 for recognizing the die D on the intermediate stage 31.

[0020] As shown in FIG. 2, the intermediate stage 31 includes a flip stage 31a and a pickup stage 31b. The die D with its surface facing up is placed on the flip stage 31a, and the flip stage 31a is inverted to place the die D on the pickup stage 31b with its surface facing down (face down). The placed die D is temporarily held on the pickup stage 31b.

[0021] As shown in FIG. 4, the first bonding unit 40 includes a temporary bonding head 41 as a first bond head, a temporary bonding recognition camera 44 as a second imaging device, an under vision camera 45 as a first imaging device, and a temporary bonding stage 46 as a first bond stage.

[0022] The temporary crimping head 41, like the pickup head 21, is equipped with a collet 42 that holds the die D at its tip. The temporary crimping head 41 moves in the Y direction.

[0023] The temporary crimping recognition camera 44 images the die D held by the substrate S or collet 42 and recognizes the bond position. Here, the substrate S is, for example, a panel such as a wiring board, lead frame, or glass substrate. In Figure 1, the substrate S is rectangular in plan view, but it may also be a disc-shaped wafer or substrate. Multiple product areas are formed on the substrate S. The product areas will ultimately become a single package. The product areas will be referred to as package areas P below. In addition, position recognition marks (reference marks Sa, described later) for the package areas P are formed on the substrate S.

[0024] The undervision camera 45 is positioned between the intermediate stage 31, which is the pickup position, and the temporary crimping stage 46, which is the bonding position. The undervision camera 45 photographs the die D held by the temporary crimping head 41 from below.

[0025] The temporary crimping stage 46 rises when the die D is placed on the substrate S, supporting the substrate S from below. The temporary crimping stage 46 has a suction port (not shown) for vacuum adsorption of the substrate S, and can fix the substrate S in place.

[0026] With this configuration, the temporary crimping head 41 picks up the die D from the intermediate stage 31 and, based on the image data from the temporary crimping recognition camera 44, bonds the die D to the transported substrate S.

[0027] As shown in Figure 3, the second bonding unit 70 includes a main crimping head 71 as a second bonding head, a main crimping recognition camera 74, and a main crimping stage 76 as a second bonding stage.

[0028] The crimping head 71 is equipped with a collet 72 that presses the die D against the substrate S. The crimping head 71 moves in the Y direction. Since the crimping area of ​​the collet 72 is sufficiently larger than the crimping area of ​​the die D, the positioning accuracy of the crimping head 71 does not need to be strict, and there is no need to correct its orientation. Furthermore, there is no need to provide a suction mechanism for the crimping head 71, including the collet 72.

[0029] This crimping recognition camera 74 photographs the die D and the substrate S in order to confirm the crimping state of the die D.

[0030] The crimping stage 76 rises when the die D is placed on the substrate S, supporting the substrate S from below. The crimping stage 76 has a suction port (not shown) for vacuum adsorption of the substrate S, and can fix the substrate S in place. The crimping stage 76 is heated by a heating device 761.

[0031] With this configuration, the main crimping head 71 permanently crimps the die D, which is temporarily crimped to the substrate S, to the substrate S. The load or load application time of the main crimping head 71 that performs the permanent crimping is greater than the load or load application time of the temporary crimping head 41 that performs the temporary crimping.

[0032] As shown in Figure 1, the transport unit 50 has transport lanes 51 and 52 that move the substrate S in the X direction. The transport lanes 51 and 52 are arranged in parallel. With this configuration, the transport unit 50 takes the substrate S from the substrate supply unit 60K, moves the substrate S along the transport lanes 51 and 52 through the temporary crimping stage 46 and the main crimping stage 76 to the substrate discharge unit 60H, and delivers the substrate S to the substrate discharge unit 60H.

[0033] The substrate supply unit 60K takes the substrates S that have been stored in the transport jig and brought in, and supplies them to the transport unit 50. The substrate discharge unit 60H stores the substrates S that have been transported by the transport unit 50 into the transport jig.

[0034] As shown in Figure 4, the control unit 80 is broadly composed of a computer mainly consisting of a CPU (Central Processing Unit) 81, a storage device 82, and an input / output device 83. The control unit 80 is also called a control device or controller.

[0035] The storage device 82 has a main storage device 82a and an auxiliary storage device 82b. The main storage device 82a consists of RAM (Random Access Memory) which stores processing programs and the like. The auxiliary storage device 82b consists of an HDD (Hard Disk Drive) or SSD (Solid State Drive) which stores control data and image data necessary for control. In addition, the control unit 80 can be connected to an external storage device.

[0036] The control unit 80 can be configured by installing the above-mentioned program, stored in an external storage device, onto a computer. The external storage device includes, for example, an HDD, USB memory, or SSD. The auxiliary storage device 82b and the external storage device are configured as computer-readable recording media. Note that the provision of programs and data to the computer and the provision of programs and data from the computer to the external device may be performed using communication means such as the internet or a dedicated line, without using an external storage device.

[0037] The input / output device 83 includes an image acquisition device 83a, a motor control device 83b, and an I / O signal control device 83c. The image acquisition device 83a acquires image data from optical systems such as the temporary crimping recognition camera 44 and the undervision camera 45. The motor control device 83b controls the drive unit of the XY table (not shown) of the wafer supply unit 10, the drive unit of the bond head table 43H (described later), the drive unit of the peeling unit 13, etc. The I / O signal control device 83c acquires signals from various sensors and controls switches and volumes that control the brightness of lighting devices, etc.

[0038] [Undervision camera] Figure 5(a) is a front view of the die held in the collet and the undervision camera. Figure 5(b) is a bottom view of the die as captured by the undervision camera.

[0039] The undervision camera 45 photographs the die D held in the collet 42 from below. The lower surface of the die D held in the collet 42 is the pattern forming surface, and alignment marks Da, for example, are provided at the four corners of the die D. If the alignment marks Da are circular, it is preferable to provide multiple marks so that rotational deviations in the horizontal plane of the die D can be detected. If the alignment marks Da are cross-shaped or other marks that can detect rotational deviations in the horizontal plane of the die D with just one mark, then one mark may suffice.

[0040] [Circuit board recognition camera] Figure 6(a) is a front view of the die, substrate, and substrate recognition camera held in the collet. Figure 6(b) is a top view of the collet, die, and substrate as captured by the substrate recognition camera.

[0041] The temporary crimping recognition camera 44 is positioned above the temporary crimping stage 46, which is the bond position, and photographs the collet 42, the die D held by the collet 42, and the substrate S from above. Two reference marks Sa are provided on the upper surface of the substrate S, near the outside of the area on which the die D is placed. Here, the reference marks Sa are circular, specially provided marks (formed patterns). However, the reference marks Sa may be cross-shaped, or they may be characteristic areas or wiring on the substrate S.

[0042] [Structure of the crimping head] Figure 7 shows an example of the structure of the temporary crimping head shown in Figure 4.

[0043] The temporary crimping head 41 moves up and down along a guide rail 43g provided on the side 43w of the bond head table 43H. The bond head table 43H has an X drive axis (not shown) that moves the temporary crimping head 41 in the X direction shown in Figure 1, and a Y drive axis (not shown) that moves it in the Y direction connecting the intermediate stage 31 and the temporary crimping stage 46. The bond head table 43H corrects for horizontal displacement of the picked-up die D.

[0044] The temporary crimping head 41 has a collet holding section 41s that holds the collet 42, a lifting section 41m that moves along a guide rail 43g fixed to the bond head table 43H, and an L-shaped separation section 41d that offsets the collet 42 from the side section 43w by a distance L. As a result, the collet 42 is positioned at a center of gravity different from that of the lifting section 41m.

[0045] A collet 42 having an adsorption hole for adsorbing the die D is provided at the tip of the collet holding portion 41s. The collet 42 and the collet holding portion 41s have an adsorption hole that communicates with a suction device (not shown) via a suction cable 41k in order to adsorb the die D.

[0046] In this embodiment, the shape formed by the collet 42, the collet holding portion 41s, and the separation portion 41d has a crank shape suitable for transmitting the temporary clamping force, but it is not necessarily limited to that shape. In short, it is sufficient that the collet 42 is separated from the separation portion 41d by a predetermined separation distance L.

[0047] The separation distance L is the distance at which the temporary crimping recognition camera 44, which has moved to the temporary crimping (mounting) position while avoiding obstacles such as the structure of the temporary crimping head 41 when temporarily crimping the die D onto the substrate S on the temporary crimping stage 46 with the temporary crimping head 41, can simultaneously capture images of the substrate S and the die D (collet 42). For example, obstacles include the lifting section 41m and the guide rail 43g. The separation distance L is set so that the field of view of the temporary crimping recognition camera 44 is not obstructed by the lifting section 41m or the guide rail 43g.

[0048] The temporary crimping head 41 has a rotating mechanism 41T that corrects the rotational misalignment of the picked-up die D. The rotating mechanism 41T consists of, for example, a θ-axis motor 41a as a drive unit and a pulley / belt section 41p for transmitting the rotational driving force of the θ-axis motor 41a to the collet holding section 41s on which the collet 42 is mounted. The rotating mechanism 41T is supported by the separation section 41d.

[0049] [Collet structure] Figures 8(a) to 8(d) show other examples of collet configurations that are attached to the temporary crimping head.

[0050] The temporary crimping head 41 and collet 42 have a structure that allows the temporary crimping recognition camera 44 to recognize the orientation of the position of the die D relative to the reference mark Sa when the die D is attracted to the head, and is viewed from directly above and downwards.

[0051] A recognizable structure is one in which, when the temporary crimping recognition camera 44 views the collet 42a holding the die D by suction from directly above, at least one corner of the die D can be taken into its field of view.

[0052] The recognizable structure is preferably such that, when the temporary crimping recognition camera 44 views the die D from directly above and downward, the portion of the die D exposed from the collet 42 includes two or more corners. In other words, it is preferable that the temporary crimping recognition camera 44 has a structure that allows it to capture two or more corners of the die D when viewing the collet 42a holding the die D from directly above.

[0053] For example, as shown in Figures 8(a) to 8(d), there are structures in which the first to fourth corners of die D are visible, or as shown in Figure 6(b), there are structures in which all four sides of die D are visible.

[0054] The collet holding portion 41s and the separation portion 41d have dimensions that do not hinder the recognition of the die D's orientation relative to the collet 42 when viewed from directly above while the die D is adsorbed. For example, the length and width dimensions of the cross-sectional area of ​​the collet holding portion 41s and the separation portion 41d parallel to the collet are made smaller than the length and width dimensions when the collet 42 is viewed from above.

[0055] [Manufacturing process for semiconductor devices] Figure 9 is a flowchart showing the manufacturing method of a semiconductor device using the flip-chip bonder shown in Figure 1. Figure 10 is a flowchart showing the detailed steps of the pickup process shown in Figure 9. Figure 11 is a flowchart showing the detailed steps of the bonding process shown in Figure 9.

[0056] As shown in Figure 9, a die bonding method (method of manufacturing a semiconductor device), which is one step in the manufacturing process of a semiconductor device, is performed using a flip-chip bonder 1. In the following description, the control unit 80 controls the operation of each part that makes up the flip-chip bonder 1.

[0057] (Wafer loading: Process S1) A wafer cassette (not shown) containing wafer rings WR is loaded into the wafer cassette lifter 11. The wafer supply unit 10 removes the wafer rings WR from the wafer cassette filled with wafer rings WR and supplies (loads) them into the wafer holder 12.

[0058] The wafer W is, for example, a semiconductor wafer, and the die D is a semiconductor chip. The semiconductor chip is opaque to visible light. On the dicing tape DT, the surface of the die D faces upward, and the surface of the die D is provided with, for example, an insulating film and metal electrodes at the openings of the insulating film. When the wafer W is thin, there is almost no variation in the die outline between the top and bottom sides of the die D. For example, the thickness of the die D is preferably 100 μm or less. The thickness of the die D is more preferably 20 to 30 μm.

[0059] (Substrate loading: Process S2) A transport jig (not shown) containing the substrate S is fed into the substrate supply unit 60K. In the substrate supply unit 60K, the substrate S stored in the transport jig is removed from the transport jig. The substrate S is then supplied (carried in) to the first bonding unit 40 via the transport unit 50. The substrate S is, for example, a wiring board that is opaque to visible light. An insulating film and metal electrodes are provided on the surface of the substrate S at the openings in the insulating film.

[0060] (Pickup: Process S3) As shown in Figure 10, the pickup process is performed.

[0061] [Die recognition: Process S31] After step S1, the wafer holder 12 moves so that the desired die D can be picked up from the dicing tape DT. The wafer recognition camera 24 photographs the die D and acquires image data. By processing the image data, the amount of displacement (in the X, Y, and θ directions) of the die D on the wafer holder 12 from the die position reference point of the flip-chip bonder is calculated. The die position reference point is a predetermined position of the wafer holder 12 that is held in advance as the initial setting of the device. Furthermore, by processing the image data, a visual inspection of the die D is performed.

[0062] [Pickup: Process S32] The peeling unit 13 moves upward so that its upper surface contacts the back surface of the dicing tape DT. The peeling unit 13 then adsorbs the dicing tape DT. The pickup head 21 descends while evacuating the collet 22 and lands on the die D to be peeled, adsorbing the die D. The pickup head 21 raises the collet 22 and peels the die D from the dicing tape DT. As a result, the die D is picked up by the pickup head 21.

[0063] [Reverse: Process S33] The pickup head 21 moves along the X direction from the pickup position to above the flip stage 31a of the intermediate stage 31. The pickup head 21 descends and places the die D, which is held in the collet 22, onto the flip stage 31a. The flip stage 31a rotates 180 degrees, inverting the surface of the die D where the metal electrodes are formed so that it faces downwards (face down), and places the die D onto the pickup stage 31b.

[0064] [Die recognition: Process S34] The stage recognition camera 34 captures images of the die D on the pickup stage 31b and acquires image data. By processing the image data, the amount of displacement (in the X, Y, and θ directions) of the die D on the pickup stage 31b from the die position reference point of the flip-chip bonder is calculated. The die position reference point is a predetermined position on the pickup stage 31b, which is stored as the initial setting of the device. By processing the image data, a visual inspection of the die D is performed.

[0065] The pickup head 21, which has transported die D to the intermediate stage 31, is returned to the wafer holder 12. Following the procedure described above (steps S31 to S34), the next die D is peeled off from the dicing tape DT, and thereafter, die D is peeled off one by one from the dicing tape DT following the same procedure.

[0066] (Bonding: Process S4) As shown in Figure 11, the bonding process is carried out.

[0067] [Substrate recognition: Process S41] The transport unit 50 transports the substrate S to the temporary bonding stage 46. The temporary bonding recognition camera 44 photographs the substrate S placed on the temporary bonding stage 46 and acquires image data. By processing the image data, the amount of displacement of the substrate S from the substrate position reference point of the flip-chip bonder 1 (in the X, Y, and θ directions) is calculated. The substrate position reference point is a predetermined position of the first bonding unit 40, which is held as the initial setting of the device. By processing the image data, the appearance of the substrate S is inspected.

[0068] [Pickup: Process S42] In step S3, the suction position of the temporary crimping head 41 is corrected based on the amount of displacement of the die D on the intermediate stage 31 calculated. The temporary crimping head 41 descends and picks up the die D with the collet 42a. Then, the temporary crimping head 41 rises and picks up the die D from the intermediate stage 31. The temporary crimping head 41 holds the die D with the collet 42 and moves from above the intermediate stage 31 to above the undervision camera 45.

[0069] [Die recognition: Process S43] The undervision camera 45 captures image data of the surface of die D from below (the bottom side). Through image processing of the image data, the alignment mark Da on the bottom surface of die D and the outer shape of die D are recognized, and the positional relationship between the alignment mark Da and the outer shape of die D is measured. The number of alignment marks Da to be measured may be one or two or more. However, the alignment mark Da to be measured is the alignment mark Da closest to the reference mark Sa when the die is placed on the substrate S.

[0070] [Bond position recognition: Process S44] The temporary crimping recognition camera 44 photographs the back surface of the die D and the surface of the substrate S from above (top side). Image data is acquired through the photography. The image data is processed to recognize the outer shape of the die D and the reference mark Sa provided on the top surface of the substrate S, and the positional relationship between the outer shape of the die D and the reference mark Sa is measured.

[0071] [Bond position correction: Process S45] The bond position is corrected based on the positional relationship between the alignment mark Da and the outer shape of the die D measured in step S43, and the positional relationship between the reference mark Sa and the outer shape of the die D measured in S44. The positional relationship between the alignment mark Da and the reference mark Sa is measured through the outer shape of the die D, and the bond position is corrected immediately before bonding. In other words, the result measured in step S43 is calculated as a correction value for the result measured in step S46, and the alignment mark Da and the reference mark Sa are aligned.

[0072] [Temporary crimping: Process S46] The temporary crimping head 41 descends, and the die D held by the collet 42 is placed on a predetermined location on the substrate S and temporarily crimped (bonded).

[0073] [Relative position inspection: Process S47] The temporary crimping recognition camera 44 photographs the die D bonded to the substrate S and acquires image data. The image data is processed to perform an inspection to determine whether the die D is bonded to the desired position (relative position inspection between the die D and the substrate S), etc.

[0074] The temporary crimping head 41, which has temporarily crimped die D onto the substrate S, is returned to the intermediate stage 31. Following the procedure described above (steps S41 to S47), the next die D is picked up from the intermediate stage 31 and temporarily crimped onto the substrate S. This is repeated until die D is temporarily crimped onto the entire substrate S.

[0075] [Main crimping: Process S48] The transport unit 50 transports the substrate S to the main crimping stage 76. The heating device 761 heats the substrate S on the main crimping stage 76. The main crimping head 71 moves from its retracted position to above the die D that has been temporarily crimped to the substrate S. The main crimping head 71 descends and the collet 72 permanently crimps (bonds) the die D to the substrate S. The crimping recognition camera 74 photographs the die D and the substrate S to acquire image data. The image data is processed to perform a visual inspection (confirmation of the crimping state).

[0076] (Substrate unloading: Process S5) The transport unit 50 transports the substrate S to which the die D has been bonded to the substrate discharge unit 60H. The substrate discharge unit 60H stores the substrate S in a transport jig. The transport jig containing the substrate S is discharged from the flip-chip bonder 1.

[0077] [Effects and Effects] If the alignment mark Da of die D is not captured by the undervision camera 45, as shown in Figure 6, the face-down die D will not have the alignment mark Da on its upper surface (collet side), and the bond position will be recognized based on the reference mark Sa on the substrate S and the die outline. This alignment is referred to as a comparative example.

[0078] Die D is formed when wafer W is cut by a dicing machine. Therefore, the die's outer shape varies on the order of micrometers (μm). In the comparative example, the reference mark Sa is aligned with the die's outer shape, so if the die's outer shape varies, the positional relationship between the reference mark Sa and the alignment mark Da will also vary. Consequently, the bond position accuracy deteriorates.

[0079] In this embodiment, the positional relationship between the alignment mark Da and the reference mark Sa is measured through the outer shape of the die, and the bond position is corrected immediately before bonding, thereby improving the bond position accuracy.

[0080] According to this embodiment, ultra-high-precision bond position correction is possible, and after correction, bonding is completed with only minute movements, so the effect of positional deviation due to movement is extremely small, making ultra-high-precision bonding possible.

[0081] According to this embodiment, instead of recognizing the marks by directly aligning them, the outer shape of the die is inserted between them, making it possible to perform positional recognition even with a visible light camera.

[0082] According to this embodiment, ultra-high-precision bonding is possible, enabling hybrid bonding. This allows for a narrower pitch at the mounting location in hybrid bonding, thereby increasing the integration density. Furthermore, hybrid bonding also enables mounting using chiplet technology. Chiplet technology is a technique in which an integrated circuit, such as a CPU, GPU, or accelerator, is divided into multiple chips according to its function, each chip is manufactured using an optimal process, and then combined and packaged as a single chip. In chiplet technology, for example, a silicon interposer is used which has a redistribution layer (RDL) on its surface, on which Cu or Au electrodes and an insulating film such as polyimide are formed.

[0083] When hybrid bonding is performed, for example, the surface of the die (wafer) and the surface of the substrate are activated by plasma treatment outside the flip-chip bonder. In this case, the insulating film on the surface of the die D and the insulating film on the surface of the substrate S are joined by temporary bonding. Furthermore, the metal electrodes on the surface of the die D and the metal electrodes on the surface of the substrate S are joined by heating and pressurizing during the final bonding.

[0084] [Other forms] This disclosure is also applicable to face-down bonding in flip-chip bonders of a different form than the flip-chip bonder described above. Examples of different forms include the second and third forms described below.

[0085] (Second aspect) Figure 12 shows the configuration of the flip-chip bonder in the second embodiment. In this embodiment, the die D is face-down on the dicing tape DT. The flip-chip bonder in this embodiment includes a pickup flip head 111 and a transfer head 121 instead of the pickup head 21 of the flip-chip bonder 1 shown in Figure 1. The pickup flip head 111 moves up and down and flips (rotates in a vertical plane). The transfer head 121 moves up and down and horizontally.

[0086] As shown in Figure 12, die D is held face down on the dicing tape DT. The collet 112 at the tip of the pickup flip head 111 attracts the back surface of die D and rises, picking up die D from the dicing tape DT. The pickup flip head 111 inverts upside down, so that the face surface of die D is facing upward. The collet 122 at the tip of the transfer head 121 attracts the surface of die D and rises, picking up die D from the pickup flip head 111. The transfer head 121 moves horizontally and descends to place die D on the flip stage 31a. At this time, the face surface of die D is facing upward. The flip stage 31a inverts, so that the face surface of die D is facing downward, and it is placed on the pickup stage 31b. The collet 42 at the tip of the temporary crimping head 41 attracts the back surface of die D and rises, picking up die D from the pickup stage 31b. The temporary crimping head 41 moves horizontally and descends to place the die D on the substrate S. At this time, the surface of the die D is facing downwards (face down).

[0087] (Third aspect) Figure 13 shows the configuration of the flip-chip bonder in the third embodiment. The flip-chip bonder in this embodiment does not have an intermediate stage. The flip-chip bonder in this embodiment is equipped with a pickup flip head 111, similar to the flip-chip bonder shown in Figure 12.

[0088] As shown in Figure 13, die D is held face up on the dicing tape DT. A collet 112 at the tip of the pickup flip head 111 attracts the surface of die D and rises, picking up die D from the dicing tape DT. The pickup flip head 111 inverts upside down, so that the back surface of die D faces upward. A collet 42 at the tip of the temporary crimping head 41 attracts the back surface of die D and rises, picking up die D from the pickup flip head 111. The temporary crimping head 41 moves horizontally and then descends to place die D on the substrate S. At this time, the surface of die D is facing downward (face down).

[0089] The disclosures made by the Discloser have been described in detail based on embodiments, but the disclosures are not limited to the embodiments described above and can be modified in various ways.

[0090] In one embodiment, a rotation mechanism 41T is provided on the temporary crimping head 41, and an example was described in which the rotational misalignment of the picked-up die D is corrected. The rotational misalignment of the die D may also be corrected by rotating the substrate S. For example, as described above, if the substrate S is a disc-shaped wafer or substrate, when bonding a die onto a disc-shaped wafer or substrate held on a bond stage equipped with a rotation mechanism, the wafer or substrate may be rotated to adjust the alignment (correct the misalignment).

[0091] In the embodiment, an example was described in which the temporary crimping head 41 moves by X-drive axes and Y-drive axes provided on the bond head table 43. The temporary crimping head 41 may not move horizontally, and the substrate side (temporary crimping stage) may move instead. In this case, the bond head table is not provided with X-drive axes and Y-drive axes.

[0092] In the embodiment, an example in which a second bonding section 70 is provided has been described. The second bonding section 70 is not required. In this case, the main bonding may be performed in the first bonding section 40, or the second bonding section 70 may be provided outside the flip-chip bonder 1 and the main bonding may be performed there.

[0093] In one embodiment, an example was described in which the reversal mechanism is provided on the intermediate stage. Alternatively, the pickup head may be provided with a pickup flip head having a reversal mechanism and a transfer head, so that the transfer head receives the die from the pickup flip head and places it on an intermediate stage without a reversal mechanism.

[0094] In the embodiment, only one example of the intermediate stage section and the first bonding section was described. However, there may be multiple intermediate stage sections and first bonding sections. [Explanation of Symbols]

[0095] 1. Flip-chip bonder (die bonding machine) 44. Temporary crimping recognition camera (second imaging device) 45. Undervision camera (first imaging device) 80... Control Unit

Claims

1. A first imaging device positioned between the pickup position and the bond position, which photographs the die held by the collet from below, A second imaging device positioned at the bond position and used to photograph the die and substrate held by the collet from above, (a) The positional relationship between the alignment marks provided on the die, which are photographed by the first imaging device, and the outer shape of the die is measured. (b) The positional relationship between the reference mark provided on the substrate, which is photographed by the second imaging device, and the outer shape of the die is measured. (c) A control unit configured to determine the positional relationship between the alignment mark and the reference mark based on the positional relationship between the alignment mark and the outer shape of the die and the positional relationship between the reference mark and the outer shape of the die, and to align the alignment mark and the reference mark, A die bonding apparatus equipped with [a specific feature].

2. In the die bonding apparatus of claim 1, Furthermore, it is equipped with a first bond head having the collet at its tip, The control unit is configured such that the lower surface of the die picked up by the first bond head can be photographed by the first imaging device.

3. In the die bonding apparatus of claim 2, The control unit is configured such that the upper surface of the die picked up by the first bond head and the upper surface of the substrate can be photographed by the second imaging device.

4. In the die bonding apparatus of claim 3, The control unit is configured to be able to place the die held in the collet onto the substrate in a die bonding apparatus.

5. In the die bonding apparatus of claim 4, The die bonding apparatus is configured such that when the collet holds the die, the second imaging device can photograph at least one corner of the die.

6. In the die bonding apparatus of claim 5, The die bonding apparatus further comprises a first bond head having a lifting mechanism for raising and lowering the collet, wherein the collet is positioned at a distance from the lifting mechanism.

7. In the die bonding apparatus of claim 2, Furthermore, the first bond head is provided with a drive shaft that moves it horizontally, The first bond head further comprises a die bonding apparatus having a rotation mechanism for rotating the collet in a horizontal plane.

8. In the die bonding apparatus of claim 2, further, The drive shaft that moves the first bond head in the horizontal direction, A rotating mechanism for rotating the substrate in a horizontal plane, A die bonding apparatus equipped with [a specific feature].

9. In a die bonding apparatus according to any one of claims 2 to 8, The first bond head is a temporary crimping head that temporarily crimps the die to the mounting position which is the position in which the die is placed. Furthermore, a die bonding apparatus comprising a second bond head for permanently bonding the temporarily bonded die.

10. The process involves photographing the die held in the collet from below, A step of photographing the die and substrate held in the collet from above, (a) measuring the positional relationship between the alignment mark provided on the die and the outer shape of the die, (b) measuring the positional relationship between the reference mark provided on the substrate and the outer shape of the die, (c) determining the positional relationship between the alignment mark and the reference mark based on the positional relationship between the alignment mark and the outer shape of the die and the positional relationship between the reference mark and the outer shape of the die, aligning the alignment mark and the reference mark, and placing the die on the substrate; A die bonding method including

11. A method for manufacturing a semiconductor device, comprising the die bonding method of claim 10.

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