Electric field driven display device

Abstract

The objective is to provide an electric field-driven display device capable of high-quality display. The objective is to provide an electric field-driven display device that prevents afterimages from occurring at the contours of pixels. Let this be the topic. [Solution] An insulating film is formed on the second electrode, and a plurality of first electrodes are formed on the insulating film. Each of the first electrodes is electrically connected to the second electrode, and the second electrodes are adjacent to each other. It is positioned so as to partially overlap with the region between the two first electrodes that meet. When the device is viewed from above or below, the first electrode and the adjacent first electrode are provided at a distance from each other. The second electrode is provided to fill the gap between the first electrode and the second electrode. .

Description

Technical Field

[0001] The present invention relates to a semiconductor device, a display device, a reflective display device, or a driving method thereof, or a manufacturing method thereof. In particular, it relates to a semiconductor device, a display device, a reflective display device, or a driving method thereof, or a manufacturing method thereof, which operates by moving particles in a liquid or a gas. Or, it relates to a semiconductor device, a display device, a reflective display device, or a driving method thereof, or a manufacturing method thereof, which utilizes the electrophoresis phenomenon. Or, it relates to an electronic device having the semiconductor device, the display device, or the reflective display device.

Background Art

[0002] In recent years, research on display devices has been actively conducted, and an electric field-driven display device (for example, electronic paper) has attracted attention as one of the display devices that can be driven with low power consumption. The electric field-driven display device has advantages such as being able to achieve low power consumption and being able to hold an image even when the power is turned off, and is expected to be used for electronic books and posters.

[0003]

Prior Art Documents

Patent Documents

[0004] [Patent Document 1] Japanese Patent Publication No. 2008-276153 [Patent Document 2] Japanese Patent Publication No. 2009-86153 [Patent Document 3] Special Publication No. 2006-518881 [Patent Document 4] Japanese Patent Publication No. 2009-139855 [Overview of the project] [Problems that the invention aims to solve]

[0005] One aspect of the present invention aims to provide an electric field-driven display device capable of high-quality display. Alternatively, one aspect of the present invention relates to display defects (for example, afterimages appearing in the outline of pixels). The objective is to provide an electric field-driven display device that reduces the phenomenon. Alternatively, the present invention The embodiment provides an electric field-driven display device that reduces the aggregation of particles contained in the display medium. The problem is to improve the way in which an electric field is applied to a display medium. Alternatively, one aspect of the present invention is to improve the way in which an electric field is applied to a display medium. The objective is to provide a field-driven display device. Alternatively, one aspect of the present invention is to provide a contrast The objective is to provide an electric field-driven display device with improved performance.

[0006] Furthermore, the description of these problems does not preclude the existence of other problems. One approach does not require that all of these issues be resolved. The title will become clear from the description in the specification, drawings, claims, etc. It is possible to extract other issues from descriptions such as specifications, drawings, and claims. That is the case. [Means for solving the problem]

[0007] One aspect of the present invention is an electric field-driven display device provided with an auxiliary electrode between the pixel electrode of one pixel and the pixel electrode of a pixel adjacent to the one pixel. Or, one aspect of the present invention has two adjacent first electrodes, a second electrode, a third electrode, and charged particles disposed between the two first electrodes and the second electrode, and the third electrode is provided between the two first electrodes and the second electrode and is electrically connected to one of the two first electrodes. The third electrode overlaps at least a part of one of the two first electrodes via an insulating film, and the third electrode overlaps at least a part of the other of the two first electrodes via the insulating film. It is an electric field-driven display device.

[0008] Or, one aspect of the present invention has two adjacent first electrodes, a second electrode, a third electrode, and charged particles disposed between the two first electrodes and the second electrode, and the third electrode is provided between the two first electrodes and the second electrode and is electrically connected to one of the two first electrodes. The third electrode overlaps at least a part of one of the two first electrodes via an insulating film, and the third electrode does not overlap with the other of the two first electrodes via the insulating film. It is an electric field-driven display device. Or, one aspect of the present invention has two adjacent first electrodes, a second electrode, a third electrode, and charged particles disposed between the two first electrodes and the second electrode, and the two first electrodes are provided between the third electrode and the second electrode. The third electrode is electrically connected to one of the two first electrodes. The third electrode overlaps at least a part of one of the two first electrodes via an insulating film. And the third electrode is provided between the two first electrodes and one of the two first electrodes. Electrically connected, the third electrode overlaps at least a part of one of the two first electrodes via an insulating film. The third electrode overlaps at least a part of the other of the two first electrodes via an insulating film. It is an electric field-driven display device.

[0009] Or, one aspect of the present invention has two adjacent first electrodes, a second electrode, a third electrode, and charged particles disposed between the two first electrodes and the second electrode, and the third electrode is provided between the two first electrodes and the second electrode and is electrically connected to one of the two first electrodes. The third electrode overlaps at least a part of one of the two first electrodes via an insulating film. And the third electrode is provided between the two first electrodes and one of the two first electrodes. Electrically connected, the third electrode overlaps at least a part of one of the two first electrodes via an insulating film. The third electrode overlaps at least a part of the other of the two first electrodes via an insulating film. The third electrode does not overlap with the other of the two first electrodes via the insulating film. It is an electric field-driven display device.

[0010] Or, one aspect of the present invention has two adjacent first electrodes, a second electrode, a third electrode, and charged particles disposed between the two first electrodes and the second electrode, and the two first electrodes are provided between the third electrode and the second electrode. The third electrode is electrically connected to one of the two first electrodes. The third electrode overlaps at least a part of one of the two first electrodes via an insulating film. And the third electrode is provided between the two first electrodes and one of the two first electrodes. No. The electrode is provided between the third electrode and the second electrode, and the third electrode is electrically connected to one of the two first electrodes. The third electrode overlaps at least a part of one of the two first electrodes via an insulating film. And the third electrode is provided between the two first electrodes and one of the two first electrodes. At least partially overlapping, the third electrode is, via an insulating film, with the other of the two first electrodes and at least At least partially overlapping, it is an electric field driving type display device.

[0011] Alternatively, one aspect of the present invention has two adjacent first electrodes, a second electrode, a third electrode and charged particles disposed between the two first electrodes and the second electrode, and the two first electrodes are provided between the third electrode and the second electrode, the third electrode is electrically connected to one of the two first electrodes, the third electrode is, via an insulating film, at least partially overlapping with one of the two first electrodes and the third electrode is, via an insulating film, not overlapping with the other of the two first electrodes, and it is an electric field driving type display device. At least partially overlapping, the third electrode is, via an insulating film, overlapping with the other of the two first electrodes It is an electric field driving type display device.

[0012] In the drawings, there are cases where the size, layer thickness, or region is exaggerated for clarity. Therefore, it is not necessarily limited to that scale. Furthermore, the drawings schematically show ideal examples and are not limited to the shapes shown in the drawings. For example, it can include variations in shape due to manufacturing technology, variations in shape due to errors, etc.

[0013] In addition, the drawings schematically show ideal examples and are not limited to the shapes etc. shown in the drawings. For example, it can include variations in shape due to manufacturing technology, variations in shape due to errors, etc. For example, it can include variations in shape due to manufacturing technology, variations in shape due to errors, etc. is possible.

[0014] In addition, technical terms are often used for the purpose of describing specific embodiments etc. However, one aspect of the invention is not limitedly interpreted by technical terms. However, one aspect of the invention is not limitedly interpreted by technical terms.

[0015] In addition, words not defined (including scientific and technical words such as technical terms or academic terms etc.) can be used as having a meaning equivalent to the general meaning understood by ordinary persons skilled in the art. Words defined by dictionaries etc. are preferably interpreted in a meaning that does not conflict with the background of the related technology. Words defined by dictionaries etc. are preferably interpreted in a meaning that does not conflict with the background of the related technology. is preferable. [Effects of the Invention]

[0016] One aspect of the present invention provides an electric field-driven display device capable of high-quality display. Alternatively, one aspect of the present invention relates to display defects (for example, the phenomenon of afterimages occurring at the contours of pixels). ) can be reduced to provide an electric field driven display device. Alternatively, one aspect of the present invention is This invention provides an electric field-driven display device that reduces the aggregation of particles contained in the display medium. Alternatively, one aspect of the present invention relates to an electric field-driven display in which the way an electric field is applied to the display medium is improved. An apparatus can be provided. Alternatively, one aspect of the present invention provides an electric field with improved contrast. A drive-type display device can be provided. [Brief explanation of the drawing]

[0017] [Figure 1] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 2] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 3] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 4] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 5] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 6] A top view of a display device according to one aspect of the present invention. [Figure 7] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 8] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 9] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 10] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 11] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 12]A cross-sectional view of a display device according to one aspect of the present invention. [Figure 13] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 14] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 15] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 16] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 17] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 18] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 19] A top view of a display device according to one aspect of the present invention. [Figure 20] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 21] A top view of a display device according to one aspect of the present invention. [Figure 22] A top view of a display device according to one aspect of the present invention. [Figure 23] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 24] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 25] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 26] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 27] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 28] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 29] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 30] A top view of a display device according to one aspect of the present invention. [Figure 31] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 32] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 33] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 34]A cross-sectional view of a display device according to one aspect of the present invention. [Figure 35] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 36] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 37] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 38] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 39] A cross-sectional view of a display device according to one aspect of the present invention. [Figure 40] A top view of a display device according to one aspect of the present invention. [Figure 41] An electronic device using a display device according to one aspect of the present invention. [Figure 42] An electronic device using a display device according to one aspect of the present invention. [Figure 43] A top view of a display device according to one aspect of the present invention. [Modes for carrying out the invention]

[0018] Embodiments of the present invention will be described in detail below with reference to the drawings. However, the present invention is... The present invention may be made in any form and without being limited to the description below, without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that various details can be changed. The description is not limited to the embodiments shown below. In the configuration described, identical parts or parts having similar functions are given the same reference numerals. This will be used in common across the drawings, and the explanation of its repetition will be omitted.

[0019] Furthermore, the content described in one embodiment (even a part of it) may be subject to change in implementation. Other content (even partial content) described in form, and / or one or more other facts The content described in the form of implementation (even if only a part of it) may be applied, combined, or replaced. It is possible to perform tasks such as drawing.

[0020] Furthermore, the content described in each embodiment refers to the use of various figures in each embodiment. This refers to the content described or the content described using the text included in the specification.

[0021] Note that the figures described in one embodiment may differ from those described in another embodiment. Figures (even if only partially), and / or figures described in one or more other embodiments. By combining (even just a part of it), even more diagrams can be constructed. This is possible. Note that a part of the figure described in one embodiment may be a different part of that figure. Further figures (even partial ones) described in that embodiment, and / or one or more figures. In another embodiment, the diagram (or even just a part of it) described above can be combined by And it is possible to construct even more diagrams.

[0022] (Embodiment 1) In this embodiment, one aspect of the electric field-driven display device of the present invention will be described with reference to the drawings. do.

[0023] Figure 1 is a schematic cross-sectional view of one embodiment of the electric field-driven display device of the present invention. Multiple electrodes 109 An insulating film 110 is formed on top. Contact holes are provided in the insulating film 110, and the insulating film 1 Multiple electrodes 100 and multiple electrodes 109 formed on 10 are electrically connected to each other. The electrode 109 is positioned so that it overlaps, at least partially, with the region between the two adjacent electrodes 100. They are arranged in such a way that, when viewed from the top or bottom of the display device, two adjacent elements The electrodes 100 are spaced apart, and electrode 109 is placed in the gap between two adjacent electrodes 100. Here, electrode 100 functions as a pixel electrode, and electrode 109 functions as an auxiliary electrode. It is possible to function in this way. In this specification, the auxiliary electrode is equivalent in area to the pixel electrode. This refers to an electrode with an area smaller than that of a pixel electrode.

[0024] A layer 102 is formed, placed, or attached between electrode 100 and electrode 101. It is being displayed. Electrode 101 can function as a counter electrode. Layer 102 is displayed It is a layer containing a medium. Layer 102 can be formed containing particles. Alternatively, layer 1 The particles contained in 02 can be charged. Such particles are charged in this specification. These are called electroparticles. As an example of layer 102, microcapsules 104 are dispersed in a dispersant 103. Examples include a fixed configuration such as between electrode 100 and layer 102 or between electrode 101 and layer 1 It is possible to form an adhesive layer, bonding layer, etc., between 02 and 02.

[0025] As an example of a microcapsule 104, an object containing two-colored particles inside the capsule was used. It is possible to do so. In Figure 1, positively charged particles of a certain color 105 and negatively charged particles of a different color This shows how the particles 106 of a certain color are dispersed in the solvent contained within the capsule. It is possible to use a transparent liquid as an example of a solvent. Electrode 100 When a voltage is applied to electrode 101, a change occurs in the electric field lines between electrode 100 and electrode 101. Then, positively charged particles 105 of a certain color and negatively charged particles 106 of a different color become electrically charged It moves according to the direction of the force lines (field direction). That is, a positively charged particle of a certain color 105 And the negatively charged particles 106 of different colors move towards either electrode 100 or electrode 101, respectively. As a result, the reflectivity of layer 102 changes. This causes the contrast to change for each pixel, and the image changes. It will be displayed. Note that the solvent may be colored. Here, if two types of particles exist... Although this is explained using two colors of particles, it is also acceptable to use only one type (one color) of particle. .

[0026] Figure 2 shows the case where the top surface of the display device is the display surface, and Figure 3 shows the case where the bottom surface of the display device is the display surface. This shows the case where a voltage is applied to electrode 100 and electrode 101, and electricity is discharged from electrode 100. When a change occurs in the electric field lines directed toward pole 101, the microcaps placed on electrode 100 The particles within the cell move in response to the electric field 107 that is directed almost perpendicularly from electrode 100 to electrode 101. In addition, a microcaps placed on the region between electrode 100 and the adjacent electrode 100 are used. The particles within the cell move in response to the electric field 108 that is directed almost perpendicularly from electrode 109 to electrode 101. (Figures 2 and 3).

[0027] Thus, one embodiment of the present invention involves a charged object (particles) in a liquid. Electrical phenomena are when objects (such as rod-shaped, cylindrical, etc.) move or rotate in response to an electric field. It utilizes the electrophoretic phenomenon. Therefore, a device that utilizes the electrophoretic phenomenon is called an electric electrophoretic device. It can be called an electrophoretic apparatus (or electrophoretic apparatus). Furthermore, it utilizes the electrophoretic phenomenon. A display device that uses electrophoresis is called an electrophoretic display device (or electrophoretic type display device). can.

[0028] Alternatively, in one embodiment of the present invention, a charged object in a liquid or gas When (particulate matter, rod-shaped objects, cylindrical objects, etc.) move or rotate in response to an electric field... It utilizes this phenomenon. Therefore, a device that utilizes such a phenomenon is called a particle device. It can be called a mobile device (or particle-transporting device). Furthermore, this phenomenon can be utilized A display device that performs this function is called a particle movement display device (or particle movement type display device). It is possible.

[0029] Alternatively, in one embodiment of the present invention, a charged object in a liquid or gas This phenomenon utilizes the fact that (particulate matter, rod-shaped objects, cylindrical objects, etc.) rotate in response to an electric field. It is used. Therefore, a device that utilizes this phenomenon is called a particle rotation device. It can also be called a particle rotation device. Furthermore, tables that utilize this phenomenon The display device can be called a particle rotation display device (or particle rotation type display device).

[0030] Alternatively, in one embodiment of the present invention, a charged object in a liquid or gas When (particulate matter, rod-shaped objects, cylindrical objects, etc.) move or rotate in response to an electric field... It utilizes this phenomenon. Therefore, a device that utilizes such a phenomenon is called an electric field. It can be called a drive device (or electric field drive device). Furthermore, this phenomenon can be utilized A display device that uses this method is called an electric field-driven display device (or electric field-driven type display device). It is possible.

[0031] Alternatively, one embodiment of the present invention involves small capsules such as microcapsules. Inside, charged objects (particulate, rod-shaped, cylindrical, etc.) move in accordance with the electric field. Alternatively, it utilizes the phenomenon of rotation. Therefore, it utilizes such a phenomenon. The device can be called a microcapsule device (or microcapsule-type device). It is possible. Furthermore, a display device that utilizes this phenomenon is called a microcapsule display. It can be called a device (or microcapsule display device).

[0032] Therefore, the apparatus shown in Figure 1 includes an electrophoresis apparatus, a particle transfer apparatus, a particle rotation apparatus, It can be called an electric field drive device or a microcapsule device.

[0033] To reduce display errors, when the electrode 101 side is used as the display surface as shown in Figure 2, It is important to be able to control particle aggregation on the electrode 101 side. Also, as shown in Figure 3, the electrodes When side 100 is used as the display surface, it is possible to control the aggregation of particles on the electrode 100 side. This is important. If particle aggregation can be controlled, display defects can be reduced without the need for a light-shielding film. A reduced display device can be obtained. Note that, as shown in Figure 3, the electrode 100 side is used as the display surface. In this case, the transistor and wiring connected to electrode 100 or electrode 109 are transparent. It is desirable to construct the display device using transparent transistors and transparent wiring.

[0034] In Figures 1 to 3, electrode 109 is electrically connected to electrode 100, therefore electrode 1 The voltage applied to 09 and electrode 100 is equivalent. Also, the thickness of layer 102 is an example. While the thickness is approximately 40 μm to 100 μm, the thickness of insulating film 110 is, for example, several nm to 2 Since it is on the order of μm, the distance from electrode 109 to electrode 101 and the distance from electrode 100 to electrode 10 The distance to 1 can be considered to be practically the same. Therefore, the display image When the image is rewritten, the electric fields 107 and 108 applied to electrode 101 become equal. Therefore, the microchips placed on the region between two adjacent electrodes 100 (on electrode 109) Even in the display area of ​​the Chromium Capsule (the area where the electric field 108 is applied), the electrodes 100 are placed on top of each other. Similar to the display area of ​​the microcapsule (the area where the electric field 107 is applied), Because particles move within the capsule and particle aggregation can be reduced, the display reflects the rewriting operation. This makes it possible to create electric field-driven display devices and electrophoretic display devices that produce less afterimages. Display device, particle transfer type display device, particle rotation type display device, or microcapsule type display device It can be manufactured.

[0035] If electrode 109 is absent, an electric field will be applied from electrode 100 to electrode 101 almost perpendicularly. The region (the region on electrode 100) and the electric field that curves from electrode 100 toward electrode 101 are affected. In the region where two adjacent electrodes 100 do not overlap, the distance from electrode 100 to electrode 1 The electric field strength is weaker in the region where the electric field curves toward 01. Therefore, display When the image is rewritten, an electric field is applied that curves from electrode 100 to electrode 101. In some areas, the state before the rewrite operation is retained, or the rewrite operation is performed Sometimes, the previous state persists, resulting in an intermediate state. In this case, particles This may cause aggregation, resulting in the displayed image exhibiting afterimages. Such phenomena occur in regions where electrode 100 does not exist, that is, between the pixel electrode and the adjacent pixel electrode. This is likely to occur at the boundary. Therefore, by using the configuration shown in Figures 1 to 3, afterimages and grains can be reduced. This can reduce the aggregation of offspring.

[0036] It is desirable to form the electrode 101 over the entire surface, but in one aspect of this embodiment, It is not limited to this. For example, the electrode 101 may be arranged in stripes. It is formed in a tripe shape, and the electrode 100 is arranged in a stripe shape extending in a direction perpendicular to the electrode 101. It is possible to do so (Figure 4). Therefore, for example, a passive matrix type display device and It is also possible to do so.

[0037] Figure 6 shows an example of a top view of a passive matrix type display device. First, the electrode 109 is formed. (Figures 4 and 6(A)). Electrode 109 can function as an auxiliary electrode. An insulating film 110 is formed on the pole 109 (Figure 4). Contact holes 113 are formed in the insulating film 110. Forms a stripe-shaped electrode 100 that is electrically connected to electrode 109 (Figure 4) (Figure 6(B)). Electrode 100 can function as a pixel electrode. A layer 102 containing the display medium is formed (Figure 4). On the layer 102 containing the display medium (electrode 109 A stripe-shaped electrode 101 is formed on the substrate opposite to the substrate on which the electrode is provided (Figure 4, Figure 6(C)). Electrode 101 can function as a counter electrode. Note that Figure 4 is a figure. This is a diagram showing the AB section of 6(C). Note that Figure 6(D) is the contact of Figure 6(B). Figure 43(A), which shows an excerpt of Hole 113 and Electrode 100, is a structural reference to Figure 6(C). This diagram shows an excerpt of the tube-shaped electrode 101.

[0038] When viewing a passive matrix display device from above or below, electrodes 109 are present throughout the entire pixel area. Alternatively, the electrode 100 is formed. In other words, the electrode 101 is formed. Electrodes 109 or 100 are formed in all regions opposite to the region (Figure 6(B)). Having such a configuration, the electrode 101 can function as a counter electrode and By applying a nearly uniform electric field to the overlapping region, a display device with reduced display defects can be obtained. ru.

[0039] Furthermore, it is possible to provide an electrode that can function as an auxiliary electrode to electrode 101. Yes. A passive matrix type display device is provided with an electrode 114 electrically connected to electrode 101. An example of a top view of the unit is shown in Figure 43(C). Figure 5 is a diagram showing the KL section of Figure 43(C). Yes. An insulating film 110 is formed on the electrode 109. Contact holes 113 are made in the insulating film 110. Forms an electrode 100 which is electrically connected to electrode 109. A layer 102 containing the medium is formed. On the layer 102 containing the display medium (a base on which the electrode 109 is provided) An electrode 101 is formed on the substrate facing the plate (Figure 5, Figure 43(B)). An insulating film 115 is formed, and an electrode is placed in a contact hole 116 formed in the insulating film 115. Electrode 114 is formed to be electrically connected to 101 (Figure 5, Figure 43(C)). A passive matrix display device in which electrodes 101 or electrodes 114 are formed on the entire pixel area. An electrode can be fabricated. In other words, an electrode can be fabricated in all regions opposite to the region where electrode 100 is formed. 101 or electrode 114 can be formed. By having such a configuration, A nearly uniform electric field is applied to the entire element, resulting in a display device with reduced display defects. Note that Figure 43(D) shows the contact hole 116 and electrode 114 from Figure 43(C). This is the diagram shown.

[0040] As shown in Figure 7, it is also possible to use electrode 109 as a retaining capacitance electrode. Figure 7 shows the configuration with wiring 111 and insulating film 112 added to the previously mentioned Figure 1. Note that wiring 1 11 may also function as a capacitive wiring. The other configurations are the same as in Figure 1. It is omitted as it is already there. In Figure 7, electrode 109 is between electrode 100 and the adjacent electrode 100. It is positioned so as to overlap at least a portion of the area in between, and the wiring 1 is connected via the insulating film 112. It is positioned in a location that overlaps with 11. In this way, electrode 109 is used as a retaining capacitance electrode. It is possible to have both the function of a primary electrode and the function of an auxiliary electrode.

[0041] The area of ​​electrode 100 and the area of ​​electrode 109 may be approximately equal. In the cross-sectional view shown in Figure 7, This is represented by the fact that the width A' of electrode 109 and the width B' of electrode 100 are approximately equal. Alternatively, the distance A between electrode 109 and the adjacent electrode 109, and the distance A between electrode 100 and the adjacent electrode 10 The distance B from 0 may be approximately equal. By having such a structure, electrode 109 and The area of ​​electrode 100 can be increased. Therefore, the capacitance value can be increased. This is possible. However, the embodiments of this model are not limited to these.

[0042] It is desirable that the film thickness D of the insulating film 112 is smaller than the film thickness C of the insulating film 110. This makes it possible to increase the capacitance value. Alternatively, this makes it possible to improve the surface of electrode 100. It becomes possible to make it flatter. However, one aspect of this embodiment is not limited to this.

[0043] The distance A between electrode 109 and the adjacent electrode 109 is greater than the film thickness D of the insulating film 112. This is preferable. This makes it possible to increase the capacity value. However, the form of this implementation This is not the only possible aspect of the state.

[0044] The distance B between electrode 100 and the adjacent electrode 100 is greater than the thickness C of the insulating film 110. This is preferable. Alternatively, the distance B between electrode 100 and the adjacent electrode 100 is the film of electrode 100. It is preferable that the distance B is greater than the thickness H. Alternatively, the distance B between electrode 100 and the adjacent electrode 100. Preferably, the thickness is greater than the film thickness G of electrode 109. Alternatively, the thickness is greater than the thickness of electrode 100 and adjacent electrodes. The distance B from electrode 100 is preferably greater than the film thickness F of the wiring 111. By increasing the distance B between adjacent electrodes 100, even if electrode 100 and adjacent electrodes 1 Even if debris gets between 00 and the adjacent electrode, a short circuit can be prevented. Even if the distance B from 100 is large, according to one aspect of this embodiment, a uniform electric field can be applied. This is possible. However, the embodiments of this model are not limited to these.

[0045] The particle diameter E is preferably smaller than the distance A between electrode 109 and the adjacent electrode 109. Alternatively, the particle diameter E is smaller than the distance B between electrode 100 and the adjacent electrode 100. This is preferable. This makes it possible to achieve high-definition display. However, this The embodiments are not limited to those described above.

[0046] The film thickness F of the wiring 111 is preferably greater than the film thickness H of the electrode 100. Alternatively, The film thickness F of wire 111 is preferably greater than the film thickness I of electrode 101. This makes it possible to reduce the resistance of line 111. However, one aspect of this embodiment is not limited to these. It is not determined.

[0047] The film thickness G of electrode 109 is preferably greater than the film thickness H of electrode 100. Alternatively, The film thickness G of electrode 109 is preferably greater than the film thickness I of electrode 101. It becomes possible to reduce the resistance of pole 109. However, one aspect of this embodiment is not limited to these. It is not determined.

[0048] The film thickness I of electrode 101 is preferably greater than the film thickness H of electrode 100. This makes it possible to lower the resistance of electrode 101. However, one aspect of this embodiment is related to this Not limited.

[0049] One embodiment of the electric field-driven display device of the present invention is shown in Figure 8, in which an insulating film 2 is placed on an electrode 200. 01 is formed, contact holes are provided in the insulating film 201, and formed on the insulating film 201 The electrode 202 and electrode 200 may be electrically connected. They are positioned so as to overlap, at least partially, with the region between two adjacent electrodes 200. That is, when viewed from the top or bottom of the display device, two adjacent electrodes 200 are separated. It is provided in such a way that electrode 202 is provided in the gap between two adjacent electrodes 200. Thus, electrode 200 functions as a pixel electrode, and electrode 202 functions as an auxiliary electrode. It is possible. In this specification, an auxiliary electrode is defined as having an area equivalent to or the surface area of ​​the pixel electrode. This refers to electrodes smaller than the product.

[0050] A layer 203 is formed, placed, or attached between electrode 202 and electrode 204. It is being displayed. Electrode 204 can function as a counter electrode. Layer 203 is displayed. It is a layer containing a medium. Layer 203 can be formed containing particles. Alternatively, layer 2 The particles contained in 03 can be charged. Such particles are referred to herein as charged These are called electroparticles. As an example of layer 203, microcapsules are dispersed in a dispersant and immobilized. Examples include the configuration, between electrode 202 and layer 203, or between electrode 204 and layer 203. It is possible to form adhesive layers, bonding layers, etc.

[0051] In Figure 8, since electrode 200 and electrode 202 are electrically connected, electrode 200 The voltage applied to electrode 202 is equivalent. Also, the thickness of layer 203 is, for example, 40 While the thickness is approximately μm to 100 μm, the thickness of the insulating film 201 is, for example, several nm to 2 μm. Therefore, the distance from electrode 200 to electrode 204 and the distance from electrode 202 to electrode 204 are approximate. The distance at can be considered to be practically the same. Therefore, the displayed image When the rewriting operation is performed, the electric field from electrode 200 to electrode 204 and from electrode 202 This becomes equivalent to the electric field directed toward electrode 204. Therefore, a micro is placed on electrode 200. Similar to the particles inside the capsule, on the region between the two adjacent electrodes 200 (on electrode 202) The particles within the placed microcapsules also move, reducing particle aggregation. That is, the display area of ​​the microcapsule placed on electrode 200 and the area placed on electrode 202 The display area of ​​the microcapsules is designed to reflect the rewrite operation in both cases. This makes it possible to manufacture electric field-driven display devices that do not produce afterimages. ru.

[0052] Furthermore, as shown in Figure 9, it is also possible to use electrode 202 as a retaining capacitance electrode. Yes. Figure 9 shows the configuration with wiring 205 and insulating film 206 added to the previously mentioned Figure 8. Wiring 205 may also function as a capacitive wiring. See Figure 8 for other configurations. Since they are similar, they are omitted. In Figure 9, electrode 202 is adjacent to electrode 200. It is positioned in a location that overlaps with at least a portion of the region between 0 and the insulating film 201 and the insulating film. It is positioned so as to overlap with the wiring 205 via the film 206. In this way, electrode 20 Electrode 2 can have both the function of a retaining capacity electrode and the function of an auxiliary electrode. ru.

[0053] The area of ​​electrode 200 and the area of ​​electrode 202 may be approximately equal. In the cross-sectional view shown in Figure 9, This is expressed by the fact that the width B'2 of electrode 202 and the width A'2 of electrode 200 are approximately equal. Alternatively, the distance B2 between electrode 202 and the adjacent electrode 202, and the distance between electrode 200 and the adjacent electrode The distance A2 from electrode 200 may be approximately equal. The area of ​​electrode 200 and electrode 202 can be increased. Therefore, the capacitance value can be increased. This becomes possible. However, the embodiments of this model are not limited to these.

[0054] It is desirable that the film thickness D2 of insulating film 206 is smaller than the film thickness C2 of insulating film 201. This makes it possible to increase the capacitance value. Alternatively, this makes it possible to increase the surface of electrode 200 This makes it possible to make it flatter. However, one aspect of this embodiment is not limited thereto. stomach.

[0055] The distance A2 between electrode 200 and the adjacent electrode 200 is greater than the film thickness D2 of the insulating film 206. This is preferable. This makes it possible to increase the capacity value. However, this implementation This is not the only possible form of the configuration.

[0056] The distance B2 between electrode 202 and the adjacent electrode 202 is greater than the thickness C2 of the insulating film 201. It is preferable that the distance B2 between electrode 202 and the adjacent electrode 202 is such that It is preferable that the film thickness H2 of electrode 2 is greater than that of electrode 202. Alternatively, electrode 202 and the adjacent electrode 202 The distance B2 is preferably greater than the film thickness G2 of electrode 200. Alternatively, electrode 202 The distance B2 between the adjacent electrode 202 is preferably greater than the film thickness F2 of the wiring 205. i. By increasing the distance B2 between electrode 202 and adjacent electrode 202, the distance between electrode 202 and adjacent electrode 202 can be increased. Short circuits with the contacting electrode 202 can be reduced. Even if the distance B2 from 2 is large, according to one aspect of this embodiment, a uniform electric field can be applied. Yes, it is possible. However, this embodiment is not limited to these examples.

[0057] The particle diameter E2 is smaller than the distance A2 between electrode 200 and the adjacent electrode 200. Preferably, the particle diameter E2 is equal to the distance B2 between electrode 202 and the adjacent electrode 202. It is preferable that it be as small as possible. This makes it possible to achieve high-definition display. Furthermore, the embodiments of this model are not limited to those described above.

[0058] The film thickness F2 of the wiring 205 is preferably greater than the film thickness H2 of the electrode 202. Preferably, the film thickness F2 of the wiring 205 is greater than the film thickness I2 of the electrode 204. This makes it possible to reduce the resistance of wiring 205. However, one aspect of this embodiment is These are not the only options.

[0059] The film thickness G2 of electrode 200 is preferably greater than the film thickness H2 of electrode 202. Preferably, the film thickness G2 of electrode 200 is greater than the film thickness I2 of electrode 204. This makes it possible to lower the resistance of electrode 200. However, one aspect of this embodiment is These are not the only options.

[0060] The film thickness I2 of electrode 204 is preferably greater than the film thickness H2 of electrode 202. This makes it possible to lower the resistance of electrode 204. However, one aspect of this embodiment is It is not limited to this.

[0061] Furthermore, this embodiment can be appropriately combined with the configurations shown in other embodiments of this specification. It can be done.

[0062] (Embodiment 2) This embodiment describes an example configuration of the electric field-driven display device of the present invention.

[0063] Examples of configurations for electric field-driven display devices include, as an example, electrophoretic methods, particle rotation methods, and particle transfer methods. There are various types of drive mechanisms. In this way, electric field-driven display devices use particles, rods, or The reflectivity can be changed by moving or rotating the tube. Tones are expressed by this. In Embodiment 1, a microcapsule electrophoresis method is applied. This section describes an electric field-driven display device. In this embodiment, a microcup type electrophoresis method is used. The formula and the Electronic Powder Fluid (registered trademark) method will be explained.

[0064] The microcup electrophoresis method will be explained using Figures 10 to 15. The cup array is made of UV-curing resin or the like and has multiple recesses in the microcup 601, which is then used to induce Charged dye particles 603 dispersed in an electrolytic solvent 602 are packed into the container and sealed with a sealing layer 604. It can be manufactured by the following. Figures 10(A) and (B) show electrodes 605 formed on a substrate 600. Then, an insulating film 606 is formed on the electrode 605, and contact holes are formed in the insulating film 606. , form electrode 607 which is electrically connected to electrode 605, and place microcups on electrode 607 An array is placed, electrodes 608 are formed on the microcup array, and a substrate 6 is placed on the electrodes 608. This is a display device in which 09 is formed. Electrode 607 can function as a pixel electrode. Electrode 605 can function as an auxiliary electrode. Figure 10(A) shows dielectric solvent 6 Figure 10(B) shows the case using an uncolored solvent, labeled as 02. The images show the use of colored solvents such as red and blue. Figures 10(A) and (B) show the charged The diagram shows the case where there is one type of pigment particle, but there may be two or more types of charged pigment particles. .

[0065] Because microcups have a wall structure that separates cells, they are sufficiently durable against impact and pressure. Furthermore, because the contents of the micro cup are sealed, they are not affected by environmental changes. In electric field-driven display devices that employ a microcup type electrophoresis method, the pixel electrodes are The electric field between an electrode capable of functioning as a counter electrode and an electrode capable of functioning as a counter electrode As the charged dye particles move in response to the change, particles may aggregate in the corners of the microcup. This can sometimes result in afterimages.

[0066] The electric field-driven display device shown in Figures 10(A) and (B) has a pitch P1 of a microcup and The structure has an electrode that can function as a pixel electrode and has a pitch P2 that is approximately equal to that of the electrode. Here, in this embodiment, the length of the top edge of the micro cup and the upper side of the micro cup The sum of the wall thickness and the pitch of the microcups corresponds to the pitch of the microcups. For example, see Figures 10(A) and (B) In this case, the pitch P2 of the micro cup is equal to the length J1 of the top edge of the micro cup and the microphone. This corresponds to the sum of the thickness L of the upper wall of the cup. Note that multiple constituent units are arranged repeatedly. When a microcup array is constructed by doing so, the length or width of the constituent unit This is sometimes called the pitch of the microcups. In this case, the constituent units are microcups. The top includes one of the multiple recesses it has.

[0067] Electrode 607 is formed to a size corresponding to the upper surface of the microcup. It overlaps with the top surface of the microcup, and in the cross-sectional view, the length of the top edge J1 of the microcup is approximately equal to or equal to the top surface of the microcup. Electrode 607 is formed in such a way that it becomes difficult to move. Electrode 607 is electrically connected to electrode 60 5 is formed. By creating this structure, the walls and surrounding areas of the microcups also The electric field is applied uniformly. This allows a uniform electric field to be applied to the entire region in which the particle is moving. This can reduce particle aggregation.

[0068] The thickness L of the upper wall of the microcup is greater than the thickness K of the lower wall of the microcup. This makes it possible to increase the strength of the walls of the microcups.

[0069] The thickness L of the upper wall of the microcup and the distance M between electrode 607 and the adjacent electrode 607 are They are roughly equal. This allows a uniform electric field to be applied across the entire region where the particle is moving. It is possible.

[0070] The electric field-driven display device shown in Figures 11(A) and (B) has a microcup pitch P1 The structure has an electrode that can function as a pixel electrode and has a pitch P2 that is approximately equal to that of the electrode. However, it has a different structure from Figures 10(A) and (B).

[0071] Figure 11(A) shows the case where an uncolored solvent is used as the dielectric solvent 602. Figure 11 (B) shows the case where a colored solvent such as red or blue is used as the dielectric solvent 602.

[0072] Electrode 607 is formed to a size corresponding to the bottom surface of the microcup. The bottom surface of the micro cup overlaps, and in the cross-sectional view, the length of the base of the micro cup, J2, is approximately equal to the length of the base of the micro cup. Electrode 607 is formed in such a way that it becomes difficult to move. Electrode 607 is electrically connected to electrode 60 5 is formed. By creating this structure, the electric field is uniformly formed on the walls of the microcups. This process reduces particle aggregation.

[0073] The distance M between electrode 607 and the adjacent electrode 607 is greater than the thickness L of the upper wall of the microcup. The size is decreasing. As a result, an electric field is also applied to the walls of the microcups, causing the particles to aggregate. It can be reduced. Alternatively, the strength of the microcup walls can be increased.

[0074] The thickness L of the upper wall of the microcup is greater than the thickness K of the lower wall of the microcup. This makes it possible to increase the strength of the walls of the microcups.

[0075] The thickness K of the lower wall of the microcup, and the distance M between electrode 607 and the adjacent electrode 607. These are roughly equal. This allows for efficient application of an electric field.

[0076] Figures 10 and 11 show the pitch P1 of the microcup and its function as a pixel electrode. We have described an electric field-driven display device with a structure in which the electrode pitch P2 is equal to the electrode pitch, but Figure In 12, the pitch P1 of the microcup is such that the electrode can function as a pixel electrode. This section describes an electric field-driven display device with a structure that has twice the pitch P2. The diagram shows the case where pitch P1 is twice pitch P2, but it is not possible to use integer multiples of 2 or more. This is possible. By using integer multiples, it becomes easier to make the display uniform.

[0077] Figure 12(A) shows the case where an uncolored solvent is used as the dielectric solvent 602. Figure 12 (B) shows the case where a colored solvent such as red or blue is used as the dielectric solvent 602.

[0078] In Figures 12(A) and (B), the end of electrode 607 is attached to the end of the upper wall of the microcup. It is formed in the corresponding location.

[0079] The thickness L of the upper wall of the microcup is greater than the thickness K of the lower wall of the microcup. This makes it possible to increase the strength of the walls of the microcups.

[0080] The distance between electrode 607 and the adjacent electrode 607 is greater than the thickness L of the upper wall of the microcup. M is becoming smaller. This allows a uniform electric field to be applied to the entire region where the particle is moving. It is possible.

[0081] The distance between electrode 607 and the adjacent electrode 607 is greater than the thickness K of the lower wall of the microcup. M is becoming smaller. This allows a uniform electric field to be applied to the entire region where the particle is moving. It is possible.

[0082] The electric field-driven display device shown in Figures 13(A) and (B) has a microcup pitch P1 However, it has a structure in which the electrode pitch P2 is twice that of a pixel electrode. This structure differs from that shown in Figures 12(A) and (B).

[0083] Figure 13(A) shows the case where an uncolored solvent is used as the dielectric solvent 602. Figure 13 (B) shows the case where a colored solvent such as red or blue is used as the dielectric solvent 602.

[0084] In Figures 13(A) and (B), the end of electrode 607 is positioned at the end of the lower wall of the microcup. It is formed in the corresponding location.

[0085] The thickness L of the upper wall of the microcup is greater than the thickness K of the lower wall of the microcup. This makes it possible to increase the strength of the walls of the microcups.

[0086] The distance between electrode 607 and the adjacent electrode 607 is greater than the thickness L of the upper wall of the microcup. M is becoming smaller. This allows a uniform electric field to be applied to the entire region where the particle is moving. It is possible.

[0087] The distance between electrode 607 and the adjacent electrode 607 is greater than the thickness K of the lower wall of the microcup. M is becoming smaller. This allows a uniform electric field to be applied to the entire region where the particle is moving. It is possible.

[0088] The electric field-driven display device shown in Figures 14(A) and (B) has a microcup pitch P1 However, it has a structure in which the pitch P2 of the electrodes that can function as pixel electrodes is half the size of the electrode. In addition, Figure 14 illustrates the case where the pitch P1 is half the pitch P2. However, it is possible to multiply it by 1 / 2 or more integers. This makes it easier to achieve a consistent display.

[0089] Figure 14(A) shows the case where an uncolored solvent is used as the dielectric solvent 602. Figure 14 (B) shows the case where a colored solvent such as red or blue is used as the dielectric solvent 602.

[0090] Electrode 607 is formed to a size corresponding to the upper surface of the two microcups. The upper edges of the two microcups and the space between the two microcups in the cross-sectional view The electrodes 607 are formed such that their length is approximately equal to the total length J3 of the upper width of the wall. This structure ensures that the electric field is applied uniformly to the walls and surrounding areas of the microcup. This allows a uniform electric field to be applied across the entire region where the particles are moving, reducing particle aggregation. It can be reduced.

[0091] The thickness L of the upper wall of the microcup is greater than the thickness K of the lower wall of the microcup. This makes it possible to increase the strength of the walls of the microcups.

[0092] The thickness L of the upper wall of the microcup and the distance M between electrode 607 and the adjacent electrode 607 are They are roughly equal. This allows a uniform electric field to be applied across the entire region where the particle is moving. It is possible.

[0093] The electric field-driven display device shown in Figures 15(A) and (B) has a microcup pitch P1 However, it has a structure in which the pitch P2 of the electrodes that can function as pixel electrodes is half. However, it has a different structure from Figures 14(A) and (B).

[0094] Electrode 607 is formed to a size corresponding to the bottom surface of the two microcups. The base of the two microcups and the area between the two microcups in the cross-sectional view The electrodes 607 are formed such that their length is approximately equal to the total length J4 of the lower width of the wall. This structure ensures that the electric field is applied uniformly to the walls and surrounding areas of the microcup. This allows a uniform electric field to be applied across the entire region where the particles are moving, reducing particle aggregation. It can be reduced.

[0095] The thickness K of the lower wall of the microcup is thinner than the thickness L of the upper wall of the microcup. It is.

[0096] The thickness K of the lower wall of the microcup, and the distance M between electrode 607 and the adjacent electrode 607. These two values ​​are equal. This allows for the efficient application of an electric field.

[0097] As shown in Figures 10 to 15, there is less in the region between electrode 607 and the adjacent electrode 607. By forming electrodes 605 so that they partially overlap, the charged dye particles 603 This electric field-driven type reduces aggregation in the corners of the Kurocup 601 and minimizes afterimages. A display device can be manufactured. However, an electrophoretic method to which one aspect of the present invention can be applied The electric field-driven display device is not limited to using microcups. A structure in which movement is blocked by some object, thereby restricting the movement of particles. It can be used for anything that has it.

[0098] The electron powder fluid (registered trademark) method will be explained using Figures 16 to 18. (Registered trademark) is a very free-flowing solid, exhibiting fluidity and combining the properties of both fluids and particles. It is a material equipped with this. In this method, cells are separated by partition walls 701, and an electron powder fluid (indicated) is placed inside the cells. Registered trademark 702 and electronic powder fluid (registered trademark) 703 are provided.

[0099] The electric field-driven display device shown in Figures 16(A) and (B) has a cell pitch P1 and pixel electrodes. The electrode has a structure in which the pitch P2 is approximately equal to that which can function as such. In this embodiment, the sum of the cell length (width) and the partition wall length (width) is relative to the cell pitch. For example, in Figures 16(A) and (B), the cell pitch P1 is the cell length. This corresponds to the sum of (width) J5 and the length (width) N of the partition wall.

[0100] Figures 16(A) and (B) show electrodes 704 formed on the substrate 700, with insulating material on the electrodes 704. A film 705 is formed, contact holes are formed in the insulating film 705, and the electrode 704 is electrically connected. A connected electrode 706 is formed, and a cell containing electron powder fluid (registered trademark) is placed on the electrode 706. A display device is formed by placing an electrode 707 on a cell and forming a substrate 708 on the electrode 707. Figure 16(A) shows Electronic Powder Fluid (registered trademark) 702 and Electronic Powder Fluid (registered trademark) 703. The diagram shows the use of white particles and black particles, and Figure 16(B) shows the electron powder fluid ( Registered trademark 702 and Electronic Powder Fluid (registered trademark) 703 are available in two colors other than white and black. While the example shown uses particles, it is not limited to this, and it is also possible to use only one type of particle. .

[0101] Electrodes 706 are formed to the size corresponding to the cell. That is, in the cross-sectional view, the cell The electrode 706 is formed so that its length (width) is approximately equal to that of J5. A gas-connected electrode 704 is formed. This structure allows the cell to separate The electric field is uniformly applied even around the wall. This creates a uniform electric field throughout the entire region where the particles are moving. This allows for a reduction in particle aggregation.

[0102] The length (width) N of the partition wall and the distance M between electrode 706 and the adjacent electrode 706 are approximately equal. This allows a uniform electric field to be applied to the entire region where the electron powder fluid (registered trademark) is moving. It is possible.

[0103] The electric field-driven display device shown in Figures 17(A) and (B) has a cell pitch P1 where the pixel electrode It has a structure in which the electrode pitch P2 is twice that of the electrode that can function as such. The length (width) J5 of the electrode is twice the size of electrode 706. Note that in Figure 17, the pitch P1 The diagram shows the case where the pitch P2 is twice the pitch, but it can be an integer multiple of 2 or more. It is possible. By using integer multiples, it becomes easier to make the display uniform.

[0104] Figure 17(A) shows Electronic Powder Fluid (registered trademark) 702 and Electronic Powder Fluid (registered trademark) 703. The diagram shows a system using white particles and black particles, and Figure 17(B) shows an electron powder fluid ( Registered trademark 702 and Electronic Powder Fluid (registered trademark) 703, two colored particles other than white and black. While examples using children are shown, the method is not limited to this, and only one type of particle may be used.

[0105] The distance M between electrode 706 and the adjacent electrode 706 is smaller than the length (width) N of the partition wall. This creates a uniform electric field across the entire region where the electron powder fluid (registered trademark) is moving. It is possible.

[0106] The electric field-driven display device shown in Figures 18(A) and (B) has a cell pitch P1 where the pixel electrode It has a structure in which the electrode pitch P2 is half the pitch of the electrode that can function as such. The electrode 706 is shaped so that the total length J6 of the two cells and the partition between them is approximately equal. This has been done. Note that in Figure 18, the case where pitch P1 is half the pitch P2 is shown. As illustrated, it is possible to multiply by 1 / 2 or more integers. Doubling the number makes it easier to make the display uniform.

[0107] Figure 18(A) shows Electronic Powder Fluid (registered trademark) 702 and Electronic Powder Fluid (registered trademark) 703. The diagram shows a mixture using white and black particles, and Figure 18(B) shows an electron powder fluid ( Registered trademark 702 and Electronic Powder Fluid (registered trademark) 703, two colored particles other than white and black. While examples using children are shown, the method is not limited to this, and only one type of particle may be used.

[0108] The length (width) N of the partition wall and the distance M between electrode 706 and the adjacent electrode 706 are approximately equal. This allows a uniform electric field to be applied to the entire region where the electron powder fluid (registered trademark) is moving. It is possible.

[0109] In electric field-driven display devices that apply the Electronic Powder Fluid (registered trademark) method, the pixel electrodes and As the electron powder fluid (registered trademark) moves in response to changes in the electric field between it and the counter electrode, the cell becomes a pixel. If the electrodes are not positioned on the electrodes, afterimages are more likely to occur. As shown in Figures 16 to 18, Electrode 70 is positioned so that at least a portion of the region between electrode 706 and the adjacent electrode 706 overlaps with that region. By forming 4, a uniform electric field is applied to the electron powder fluid (registered trademark) within the cell, and the remaining It is possible to manufacture an electric field-driven display device that is less prone to image generation.

[0110] In this embodiment, the microcup electrophoresis method and the Electrophoretic Ink (registered trademark) method are described. However, the methods to which one aspect of the present invention can be applied are not limited to these. For example, the electro-wetting method, the toner method, the twist ball method, etc. can be applied. It is possible.

[0111] Note that this embodiment can be implemented in appropriate combination with the configurations shown in other embodiments of this specification. It can be implemented.

[0112] (Embodiment 3) In this embodiment, one aspect of the field-driven display device of the present invention will be described with reference to the drawings. It will be described.

[0113] FIG. 19 is one aspect of the top view of an active matrix type field-driven display device to which the configuration of FIG. 7 is applied. The C-D cross-section of FIG. 19 is shown in FIG. 20(A), and the E-F cross-section is shown in FIG. 20(B). Shown. In FIG. 19, electrodes 301 to 303, wiring 304, conductive layers 309 to 3 14, conductive layers 335 to 337, wiring 341, conductive layers 342 to 344, semiconductor layers 306 to 308, semiconductor layers 332 to 334, electrodes 316 to 318 are shown, and the configurations other than these are omitted. The electrodes 301 to 303 can function as gate electrodes. The wiring 3 04 and the wiring 341 can function as capacitive wirings. The conductive layers 310, conductive layer

[0114] 312, conductive layer 313, conductive layers 335 to 337, and conductive layers 342 to​​​​​​ The poles 340 and the electrodes 345 to 347 can function as pixel electrodes. Conductive layers 309, conductive layer 311, and conductive layer 314 can function as source lines.

[0115] The configurations of FIGS. 20(A) and (B) will be described. First, a conductive film is formed on the substrate 300. The conductive film is processed into a desired shape to become the electrodes 301 to 303 and the wiring 304. The substrate 300 can be a glass substrate, a plastic substrate, or the like. The conductive film that becomes the electrodes 301 to 303 and the wiring 304 is made of titanium, molybdenum, tantalum, chromium, tungsten, stainless steel, aluminum, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, lithium, germanium, indium tin oxide (hereinafter, ITO), indium zinc oxide <o (hereinafter, IZO), zinc oxide (ZnO), or tin oxide (SnO), and can be formed into a single layer or multiple layers by sputtering or CVD methods or the like. Also, a base film may be formed on the substrate 300 before forming the conductive film. As the base film, an insulating film can be formed as a single layer or laminated by a silicon oxide-based material film or a silicon nitride-based material film or the like. Note that the silicon oxide-based material refers to silicon oxide mainly composed of oxygen and silicon, or silicon oxynitride in which silicon oxide contains nitrogen and the oxygen content is more than the nitrogen content. The silicon nitride-based material refers to silicon nitride mainly composed of nitrogen and silicon, or silicon oxynitride in which silicon nitride contains oxygen and the nitrogen content is more than the oxygen content. Note that the gate lines 330, gate line 331, and wiring 341 shown in FIG. 19 are formed in the same process as the electrodes 301 to 303 and the wiring 304. ​​​​​​​

[0116] An insulating film 305 is formed on electrodes 301 to 303, wiring 304, and substrate 300. The insulating film 305 is made using a silicon oxide-based material or a silicon nitride-based material, etc., by plasma CVD. It can be formed by a method such as sputtering. The insulating film 305 is a gate insulating film. It can also function as such. Furthermore, the insulating film 305 is an insulating film with a retaining capacity. It is possible to have that function.

[0117] A semiconductor layer 306 (semiconductor layer 306a and semiconductor layer 306b) is placed on an insulating film 305, semiconductor Layer 307 (semiconductor layer 307a and semiconductor layer 307b), semiconductor layer 308 (semiconductor layer 308 a and semiconductor layer 308b) are formed. The semiconductor layer 306 is connected to electrode 30 via insulating film 305. It is formed in a position that overlaps with 1. The semiconductor layer 307 overlaps with electrode 302 via the insulating film 305. It is formed in the specified position. The semiconductor layer 308 is formed in a position that overlaps with the electrode 303 via the insulating film 305. The semiconductor layers 332 to 334 shown in Figure 19 are semiconductor layers 306 to semiconductor layers. It is formed in the same process as layer 308.

[0118] Semiconductor layers 306 to 308 are made of amorphous silicon or other non-crystalline materials. Semiconductor layers, microcrystalline silicon, polycrystalline silicon, monocrystalline silicon, gallium arsenide (GaA Compound semiconductors such as s), oxide semiconductors such as zinc oxide (ZnO) and In-Ga-Zn-O systems. Alternatively, organic semiconductor materials can be used, but here, as an example, amorphous Let's explain the case using silicon.

[0119] Semiconductor layer 306a, semiconductor layer 307a, and semiconductor layer 308a are amorphous silicone It can be formed by a photolithography method, an inkjet method, a printing method, or the like using this. This is possible. The semiconductor layers 306a, 307a, and 308a can include portions that function as the channel regions of the transistors.

[0120] When amorphous silicon is used as the semiconductor layers 306a, 307a, and 308a, there are advantages such that the uniformity of the transistor characteristics is high and the manufacturing cost is low. In particular, it is effective when manufacturing transistors on a large substrate whose diagonal length exceeds 500 mm.

[0121] The semiconductor layers 306b, 307b, and 308b can use a semiconductor material such as silicon containing phosphorus or the like, which has a higher conductivity than the semiconductor layers 306a, 307a, and 308a. The semiconductor layers 306b, 307b, and 308b can also be represented as a buffer layer or an n-layer depending on their functions. The semiconductor layers 306b, 307b, and 308b can include portions that function as sources and drains.

[0122] Next, conductive layers 309 to 314 are formed. The conductive layer 309 can include a portion that functions as one of the source and the drain. The conductive layer 310 can include a portion that functions as the other of the source and the drain. The conductive layer 311 can include a portion that functions as one of the source and the drain. The conductive layer 312 can include a portion that functions as the other of the source and the drain. The conductive layer 313 can include a portion that functions as the source and the drain. [[ID=X]] ​​​​​​​​It may include a portion that functions as one of the two. The conductive layer 314 is the source and drain. It is possible to include a portion that functions as the other. Conductive layers 309 to 314 are titanium , molybdenum, tantalum, chromium, tungsten, aluminum, neodymium, copper, silver, Gold, platinum, niobium, silicon, zinc, iron, barium, germanium, ITO, IZO, acid Using zinc oxide (ZnO) or tin oxide (SnO), sputtering or CVD methods, etc. This allows for the formation of a single layer or multiple layers. Note that the conductive layer 335 shown in Figure 19 is conductive. Layer 337 and conductive layers 342 to 344 are formed in the same process as conductive layers 309 to 314. It will be accomplished.

[0123] An insulating film 315 is formed on conductive layers 309 to 314 in a single layer or multilayer. 15 is a silicon oxide-based material or silicon nitride-based material, etc., and is produced by plasma CVD or It can be formed by methods such as puttering. Furthermore, an organic material can be used as the insulating film 315. It may be formed in a single layer or multiple layers. For example, acrylic, polyimide, polyamide, polyimide Midamide, benzocyclobutene, epoxy, etc. can be used. Also, insulating film 31 5 may be a laminated structure of organic and inorganic materials. Also, the insulating film 315 may have light-shielding properties. Materials or color filters with light-shielding properties may be used. Examples of light-shielding materials include carbon Examples include black, organic resins containing black pigment, etc.

[0124] An electrode 31 is electrically connected to the conductive layer 310 by opening a contact hole in the insulating film 315. 6. Electrodes 317 that are electrically connected to the conductive layer 312, and electrodes 317 that are electrically connected to the conductive layer 313. Electrode 318 is formed. Note that electrodes 338 to 340 and electrodes 345 to 348 are shown in Figure 19. Electrode 347 is formed in the same process as electrodes 316 to 318.

[0125] In the case of a structure where the display is shown on the opposing electrode side, electrodes 316 to 318 are made of a light-absorbing material and shaped accordingly. It is preferable to use chromium, titanium, titanium nitride, molybdenum, tungsten, etc. Materials with low reflectivity such as tantalum, tantalum nitride, etc. are preferred. Alternatively, electrode 316~ The electrode 318 can be formed from a transparent material, and the insulating film 315 can be formed from a light-absorbing material. It is Noh.

[0126] In the case of a structure where the display is shown on the pixel electrode side, electrodes 316 to 318 are titanium, molybdenum, Tantalum, chromium, tungsten, aluminum, neodymium, copper, silver, gold, platinum, niobium silicon, zinc, iron, barium, germanium, ITO, IZO, zinc oxide (ZnO) It is preferable to form it as a single layer or multiple layer using tin oxide (SnO) or other materials.

[0127] Here, the conductive layer 310, which can also function as an auxiliary electrode, is located on the upper surface of the display device or When viewed from below, it overlaps with the gap between electrode 316 and electrode 317. By doing so, an electric field-driven display device that is less prone to display malfunctions can be obtained.

[0128] A layer 319 is formed on electrodes 316 to 318. Layer 319 is a layer containing a display medium. As layer 319, for example, a dispersant 32 in which microcapsules 320 are dispersed and immobilized. 1 is placed on electrodes 316 to 318. Note that electrodes 322 and substrate 323 are placed on layer 319. A layer is formed. Electrode 322 can function as a counter electrode. Layer 319 and An adhesive layer can be provided between electrodes 316 and 318. Layer 319 and electrodes An adhesive layer can be provided between 322 and the other part.

[0129] In the case of a structure where the display is shown on the opposing electrode side, the electrode 322 is made of a light-transmitting material such as ITO or IZO. Use.

[0130] In the case of a structure where the display is located on the pixel electrode side, it is preferable to use a metal material for electrode 322. It is possible to reduce wiring resistance by using metal materials. Titanium, molybdenum, tantalum, chromium, tungsten, aluminum, neodymium, copper Using silver, gold, platinum, niobium, silicon, zinc, iron, barium, germanium, etc. It is possible.

[0131] A substrate 323 is placed on the electrode 322. The substrate 323 is a protective layer for layer 319. It is possible to have this capability. And the substrate 323 can be a plastic substrate, a resin substrate, Film substrates, glass substrates, ceramic substrates, stainless steel substrates, stainless steel foil substrates, etc. You can use it.

[0132] In Figure 19, the conductive layer 313 consists of electrodes 316, 318, 338, and 3 It is positioned so as to partially overlap with 39. An electric field driven table in one aspect of this embodiment. When the device is viewed from above or below, the conductive layer 313 is located in the gap between electrode 318 and electrode 316. It is positioned to fill the gap. The conductive layer 313 fills the gap between electrode 318 and electrode 338. They are arranged in such a way that they can be seen.

[0133] In Figure 19, the conductive layer 310 consists of electrodes 316, 317, 339, and 3 It is arranged so as to partially overlap with 40. An electric field driven table in one aspect of this embodiment. When the device is viewed from above or below, the conductive layer 310 is located in the gap between electrode 316 and electrode 317. It is positioned to fill the gap. The conductive layer 310 fills the gap between electrode 316 and electrode 339. They are arranged in such a way that they can be seen.

[0134] In Figure 19, the conductive layer 312 is arranged so as to partially overlap with electrodes 317 and 340. It is placed. An electric field driven display device in one aspect of this embodiment is viewed from above or below. Upon inspection, it appears that the conductive layer 312 is positioned to fill the gap between electrode 317 and electrode 340. ru.

[0135] In Figure 19, the conductive layer 342 is connected to electrodes 316, 318, 345, and 3 It is positioned so as to partially overlap with 46. An electric field driven table in one aspect of this embodiment. When the device is viewed from above or below, the conductive layer 342 is located in the gap between electrode 345 and electrode 346. It is positioned to fill the gap. The conductive layer 342 fills the gap between electrode 345 and electrode 318. They are arranged in such a way that they can be seen.

[0136] In Figure 19, the conductive layer 343 consists of electrodes 316, 317, 346, and 3 It is positioned so as to partially overlap with 47. An electric field driven table in one aspect of this embodiment. When the device is viewed from above or below, the conductive layer 343 is in the gap between electrode 346 and electrode 347. It is positioned to fill the gap. The conductive layer 343 fills the gap between electrode 346 and electrode 316. They are arranged in such a way that they can be seen.

[0137] In Figure 19, the conductive layer 344 is arranged so as to partially overlap with electrodes 317 and 347. It is placed. An electric field driven display device in one aspect of this embodiment is viewed from above or below. Upon inspection, it appears that the conductive layer 344 is positioned to fill the gap between electrode 317 and electrode 347. ru.

[0138] Alternatively, to prevent short circuits with the pixel electrodes or auxiliary electrodes of adjacent pixels, the pixel electrodes It is possible for a small area to exist where neither auxiliary electrodes are placed.

[0139] Figure 21 is a magnified view of one pixel and its surroundings in Figure 19. Note that, for the sake of simplification of the figure, Lines 304 and wiring 341 have been omitted. In Figure 21, for the sake of simplicity in explanation, one section has been omitted. The surface area of ​​the conductive layer 310, conductive layer 312, conductive The pitch of the conductive layers 313, conductive layers 335 to 337, and conductive layers 342 to 344 (adjacent It is defined based on the distance to the conductive layer that can be in contact with the electrode and function as an auxiliary electrode. In Figure 21, a region having the area of ​​one pixel is defined as region 350.

[0140] In Figure 21(A), region 351 consists of electrode 339, conductive layer 310, electrode 316, conductive A region surrounded by layer 313, comprising electrodes and auxiliary electrodes capable of functioning as pixel electrodes. This is a region where no conductive layer capable of functioning as an electrode is placed. Region 352 is a conductive layer The region surrounded by 310, electrode 317, conductive layer 343, and electrode 316, is a pixel electrode. A conductive layer capable of functioning as an electrode and an auxiliary electrode is provided. It is an area that does not exist.

[0141] In Figure 21(B), region 353 is the area of ​​electrode 339, electrode 340, electrode 316, and This is a region where pole 317 is not located, and where the conductive layer 310 is located.

[0142] Electrodes 339, 340, 316, 317, and the conductive layer 310 are not provided. The regions (regions 351 and 352) exist to prevent short circuits with adjacent pixels. This is the area. However, in order to obtain a display device that reduces display defects, a wider range is needed. A conductive layer that can function as a pixel electrode or auxiliary electrode needs to be placed. Then, electrodes 339, 340, 316, 317, and the conductive layer 310 are arranged. The area of ​​the region where electrodes 339, 340, 316, and 317 are not located is the area where electrodes 339, 340, 316, and 317 are not located. It is desirable that the area is smaller than the area of ​​the area where the conductive layer 310 is placed. In other words, it is desirable that the combined area of ​​region 351 and region 352 be smaller than the area of ​​region 353. Furthermore, a conductive layer 310 capable of functioning as an auxiliary electrode is formed in region 353. As explained in the example above, region 353 contains a conductive layer that can function as a pixel electrode. a conductive layer that can function as an auxiliary electrode, and a conductive layer other than the wiring that will be the source wire It may be established.

[0143] Note that conductive layer 310, conductive layer 312, conductive layer 313, conductive layer 335 to conductive layer 337, The conductive layer 342 to the conductive layer 344 are the layers of gate line 330 and gate line 331, and the pixel Electrodes 316 to 318, electrodes 338 to 340, which can function as electrodes, It is located between the layers of electrodes 345 and 347. At this time, the gate line and the conductive Layer 310, conductive layer 312, conductive layer 313, conductive layer 335~conductive layer 337, conductive layer 342~ The area overlapping the conductive layer 344 is greater than the area of ​​the gate line and the area that can function as a pixel electrode. Overlapping electrodes 316 to 318, 338 to 340, and 345 to 347. It is desirable to arrange the gate lines so that the area is larger. Pixel electrodes are auxiliary. Because it is formed on an insulating film provided on the auxiliary electrode, the gate line is located in a position that overlaps with the pixel electrode. By arranging these elements, the parasitic capacity can be reduced.

[0144] The configuration shown in Figures 19, 20(A), and 20(B) reduces particle aggregation. Because it can be reduced, the display can reflect the rewriting operation, and afterimages will not occur. A pile-field driven display device can be manufactured.

[0145] In this embodiment, a channel-etched TFT was described as an example, but a channel-protected TFT is also described. It is also possible to use FT or top-gate type TFTs, etc.

[0146] Figure 22 shows one aspect of a top view of an electric field-driven display device using a top-gate type TFT. The GH cross-section in Figure 22 is shown in Figure 23.

[0147] A semiconductor layer 801 and a semiconductor layer 802 are formed on the substrate 800. A border film may be formed. Semiconductor layer 801 and semiconductor layer 802 are made of polycrystalline silicon. It can be formed by photolithography, inkjet printing, or other methods.

[0148] An insulating film 803 is formed on semiconductor layer 801 and semiconductor layer 802. The insulating film 803 is It can function as an insulating film. The insulating film 803 is a silicon oxide-based material or nitride Formed using silicon-based materials, etc., by plasma CVD or sputtering methods. It is possible.

[0149] Gate electrode 804 and gate electrode 805 are formed on insulating film 803. Gate electrode 80 4 and gate electrode 805 are made of titanium, molybdenum, tantalum, chromium, tungsten, and Aluminum, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, gelatin Lumanium, indium tin oxide (hereinafter, ITO), indium zinc oxide (hereinafter, ITO) Using ZO, zinc oxide (ZnO), or tin oxide (SnO), sputtering or It can be formed in single or multilayer form by methods such as CVD.

[0150] An insulating film 806 is formed on gate electrode 804, gate electrode 805, and insulating film 803. The insulating film 806 uses a silicon oxide-based material or a silicon nitride-based material, etc., for plasma CV It can be formed by the D method or sputtering method, etc. Also, as the insulating film 806, Organic materials may be formed in single or multilayer structures. For example, acrylic, polyimide, polyam Polyimide amides, benzocyclobutenes, epoxy, etc. can be used. The insulating film 806 may be a laminated structure of organic material and inorganic material. In this case, a light-shielding material or a color filter may be used. Examples include carbon black and organic resins containing black pigments.

[0151] Contact holes are formed in insulating film 803 and insulating film 806, and electrical contact with semiconductor layer 801. Electrodes 807 and 808 connected to the semiconductor layer 802, and electrode 8 that is electrically connected to the semiconductor layer 802. Electrodes 807 and 810 are formed. Electrodes 807 to 810 are made of titanium, molybdenum, and Tungsten, chromium, aluminum, neodymium, copper, silver, gold, platinum, niobium, Silicon, zinc, iron, barium, germanium, ITO, IZO, zinc oxide (ZnO), Alternatively, it can be formed as a single layer or multilayer using tin oxide (SnO). Electrode 807 Electrode 809 functions as the source wire, and electrodes 808 and 810 function as auxiliary electrodes. It is possible for it to function. Note that electrodes 851 to 854 shown in Figure 22 are the same as electrode 807. ~Formed in the same process as electrode 810.

[0152] An insulating film 811 is formed on electrodes 807 to 810. The insulating film 811 is silicon oxide-based. Using materials or silicon nitride-based materials, by plasma CVD or sputtering methods, etc. It can be formed in this way. In addition, an organic material can be formed as an insulating film 811 in a single layer or multiple layers. This may be done. For example, acrylic, polyimide, polyamide, polyimideamide, benzos Clobutene, epoxy, etc. can be used. In addition, the insulating film 811 is made of organic and inorganic materials. A laminated structure with other materials may also be used. Furthermore, a light-shielding material may be used as the insulating film 811. Good. Examples of light-blocking materials include carbon black and organic resins containing black pigments. It can be done.

[0153] A contact hole is formed in the insulating film 811, and electrode 81 is electrically connected to electrode 808. 2 and electrode 813 which is electrically connected to electrode 810 are formed. Electrode 812 and electrode 8 13 are titanium, molybdenum, tantalum, chromium, tungsten, aluminum, neodymium Ion, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, germanium, ITO Using IZO, zinc oxide (ZnO), or tin oxide (SnO), a single-layer or multi-layer structure can be formed. It is possible. Electrodes 812 and 813 can function as pixel electrodes. That is the case. Note that electrodes 855 to 861 shown in Figure 22 are the same as electrodes 812 and 813. Formed in the process. Electrode 855 is electrically connected to electrode 851. Electrode 859 is electrically Electrode 860 is electrically connected to electrode 852. Electrode 860 is electrically connected to electrode 853. Electrode 861 is electrically connected to electrode 854.

[0154] A layer 814, an electrode 815, and a substrate 816 are formed on electrodes 812 and 813. or placed or pasted. Layer 814 is the layer containing the display medium. Here Layer 814 is given as an example of a layer containing microcapsules.

[0155] Electrode 815 is made of titanium, molybdenum, tantalum, chromium, tungsten, aluminum, Neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, germanium, etc. The metal material can be used. Electrode 815 can function as a counter electrode. be.

[0156] The substrate 816 can be a plastic substrate, a resin substrate, a film substrate, a glass substrate, or a ceramic substrate. Mixed substrates, stainless steel substrates, stainless foil substrates, etc., can be used.

[0157] Figure 24 shows the conductive layer 817 formed using the same material and process as the gate electrode 804 and the same process as in Figure 23. This is an example of a cross-sectional view of an electric field-driven display device with a structure that includes a conductive layer 818. The conductive layer 817 is The insulating film 806 overlaps with at least a portion of the electrode 808, and serves as one of the electrodes for holding capacitance. It is possible for it to function. The conductive layer 818 is less than the electrode 810 via the insulating film 806. Both overlap to some extent, allowing them to function as one of the electrodes for holding capacity.

[0158] Figure 25 shows the conductive layer 819 formed from the same material and process as the gate electrode 804 in Figure 23. This is an example of a cross-sectional view of an electric field-driven display device with a structure that includes a conductive layer 820. The conductive layer 819 is The insulating film 803 overlaps with at least a portion of the semiconductor layer 801, and one electrode of the retaining capacitance It can function as such. The conductive layer 820 is connected to the semiconductor layer 802 via the insulating film 803. At least a portion of it overlaps, making it possible to function as one of the electrodes for holding capacity.

[0159] In Figure 22, electrode 808 is connected to electrode 812, electrode 813, electrode 857, and electrode 858. They are arranged so that they partially overlap. Electric field driven display device in one aspect of this embodiment When viewed from above or below, electrode 808 fills the gap between electrode 812 and electrode 813. They are arranged in such a way. Electrode 808 fills the gap between electrode 857 and electrode 812. It is located there.

[0160] In Figure 22, electrode 810 is positioned so as to partially overlap with electrodes 858 and 813. It is shown. An electric field-driven display device in one aspect of this embodiment can be viewed from above or below. Then, electrode 810 is positioned to fill the gap between electrode 858 and electrode 813.

[0161] In Figure 22, electrode 851 is connected to electrode 856, electrode 855, electrode 857, and electrode 812. They are arranged so that they partially overlap. Electric field driven display device in one aspect of this embodiment When viewed from above or below, electrode 851 fills the gap between electrode 855 and electrode 812. They are arranged in such a way. Electrode 851 fills the gap between electrode 855 and electrode 856. It is located there.

[0162] In Figure 22, electrode 852 is connected to electrode 855, electrode 859, electrode 812, and electrode 860. They are arranged so that they partially overlap. Electric field driven display device in one aspect of this embodiment When viewed from above or below, electrode 852 fills the gap between electrode 859 and electrode 860. They are arranged in such a way. Electrode 852 fills the gap between electrode 859 and electrode 860. It is located there.

[0163] In Figure 22, electrode 853 is connected to electrode 812, electrode 860, electrode 813 and electrode 861 They are arranged so that they partially overlap. Electric field driven display device in one aspect of this embodiment When viewed from above or below, electrode 853 fills the gap between electrode 860 and electrode 861. They are arranged in such a way. Electrode 853 fills the gap between electrode 812 and electrode 860. It is located there.

[0164] In Figure 22, electrode 854 is positioned so as to partially overlap with electrodes 813 and 861. It is shown. An electric field-driven display device in one aspect of this embodiment can be viewed from above or below. Then, electrode 854 is positioned to fill the gap between electrode 813 and electrode 861.

[0165] By adopting this structure, an electric field-driven display device that is less prone to display malfunctions can be obtained. It is possible.

[0166] Furthermore, the electric field-driven display device shown in Figures 22 to 25 has semiconductor layer 801 and semiconductor layer 80 2. Because polycrystalline silicon is used, the transistor mobility is high, and the manufacturing process is It has the advantage of being small in size. Furthermore, because its properties deteriorate less over time, it is a highly reliable device. You can obtain a place.

[0167] Note that electrodes 807 to 810 and electrodes 851 to 854 are gate wires (gate electrodes). A layer having 804 and gate electrode 805, which can function as a pixel electrode. The electrodes 812, 813, and 855 to 861 are located between the layers of electrodes 812 and 813. At this time, the gate wire overlaps with electrodes 807 to 810 and electrodes 851 to 854. Rather than the area, the gate line and electrodes 812 and 8 that can function as pixel electrodes are located. 13. The gate wire is positioned such that the area overlapping with electrodes 855 to 861 is larger than the area overlapping with electrodes 855 to 861. It is desirable that they be arranged in this manner. The pixel electrodes are formed on an insulating film provided on the auxiliary electrodes. Therefore, by placing the gate line in a position that overlaps with the pixel electrode, parasitic capacitance can be reduced. can.

[0168] Alternatively, an electric field-driven display device may be constructed using a TFT made of oxide semiconductor. Figures 26(A) to (C) are examples of bottom-gate TFTs using oxide semiconductors.

[0169] In Figure 26(A), a gate electrode 901 and a conductive layer 912 are formed on the substrate 900. A base insulating film may be formed on the substrate 900. Guard gate electrode 901 and conductive layer 91 A gate insulating film 902 is formed on 2. An electrode 903 and an electric electrode are formed on the gate insulating film 902. Electrode 904 is formed. Electrode 903 functions as either a source electrode or a drain electrode. This is possible. Electrode 904 can function as an auxiliary electrode. Electrode 903 A semiconductor layer 905 made of an oxide semiconductor is formed on the electrode 904 and the gate insulating film 902. An insulating film 906 is formed on the semiconductor layer 905. Contacts are made in the insulating film 906. A hole is formed, and an electrode 907 is formed that is electrically connected to electrode 904. Electrode 907 can function as a pixel electrode. Layer 908 is formed on electrode 907. Layer 908 is a layer containing a display medium. An electrode 909 is formed on layer 908. The electrode 909 can function as a counter electrode. A protective body 91 is placed on the electrode 909. A 0 is formed. Electrode 904 is formed by electrode 907 and electrode 907, which was formed in the same process as electrode 907. It is formed such that at least a portion of the region between it and pole 911 overlaps. The conductive layer 912 is It overlaps with electrode 904 via insulating film 902 and functions as one of the electrodes for holding capacitance. It is possible to do so.

[0170] The TFT structure shown in Figure 26(A) is, a semiconductor layer made of oxide semiconductor with a base layer underneath. This TFT has a bottom contact type structure in which a drain electrode or a bottom electrode is formed. This can be applied to the embodiments.

[0171] In Figure 26(B), a gate electrode 921 and a conductive layer 932 are formed on the substrate 920. A base insulating film may be formed on the substrate 920. Token gate 921 and conductive layer 93 A gate insulating film 922 is formed on 2. An oxide semiconductor is formed on the gate insulating film 922. A semiconductor layer 923 is formed. Electrodes 924 and 925 are formed on the semiconductor layer 923. It has been done. Electrode 924 can function as either a source electrode or a drain electrode. Yes. Electrode 925 can function as an auxiliary electrode. Electrodes 924 and 92 An insulating film 926 is formed on 5. Contact holes are formed in the insulating film 926, and electricity An electrode 927 is formed that is electrically connected to pole 925. Electrode 927 is a pixel electrode. It is possible to function in this way. A layer 928 is formed on the electrode 927. The surface of layer 928 is This is a layer containing a dielectric medium. An electrode 929 is formed on layer 928. Electrode 929 is a counter electrode. It can function as an electrode. A protective body 930 is formed on the electrode 929. Electrode 925 is located in the region between electrode 927 and electrode 931, which is formed in the same process as electrode 927. They are formed so that at least a portion of them overlap. The conductive layer 932 is separated from the gate insulating film 922. It overlaps with electrode 925 and can function as one of the electrodes for holding the capacitance.

[0172] The TFT structure shown in Figure 26(B) is a semiconductor layer made of oxide semiconductor material. This TFT has a structure called a top-contact type, in which a top electrode or drain electrode is formed. This can be applied to the embodiments.

[0173] In Figure 26(C), a gate electrode 941 and a conductive layer 953 are formed on the substrate 940. A base insulating film may be formed on the substrate 940. Guard gate 941 and conductive layer 95 A gate insulating film 942 is formed on 3. An oxide semiconductor is formed on the gate insulating film 942. A semiconductor layer 943 is formed on the semiconductor layer 943, overlapping with the gate electrode 941. A channel protection film 944 is formed at the position shown. Channel protection film 944 and semiconductor layer Electrodes 945 and 946 are formed on 943. Electrode 945 is a source electrode or It can function as a drain electrode. Electrode 946 can function as an auxiliary electrode. This is possible. An insulating film 947 is formed on electrodes 945 and 946. A contact hole is formed in 947, and electrode 948 is electrically connected to electrode 946. It has been done. Electrode 948 can function as a pixel electrode. On electrode 948 A layer 949 is formed. Layer 949 is a layer containing a display medium. An electrode 95 is placed on layer 949. A zero is formed. Electrode 950 can function as a counter electrode. Electrode 95 A protective body 951 is formed on 0. Electrode 946 is the same as electrode 948 and electrode 948 It is formed so as to overlap at least a portion of the region between the electrode 952 formed in the process. The electrode layer 953 overlaps with the electrode 946 via the gate insulating film 942, and one of the holding capacities It can function as an electrode.

[0174] The TFT structure shown in Figure 26(C) is a semiconductor layer made of oxide semiconductor material. This embodiment applies a TFT with a channel-protected structure, which has a channel-protective film formed on it. It is possible.

[0175] As shown in Figures 26(A) to (C), when an oxide semiconductor is used as the semiconductor layer, Higher mobility can be obtained than with thin-film transistors using morphous silicon. Dioxide semiconductor films can be formed at temperatures below 300°C by sputtering or other methods. The manufacturing process is simpler than that of thin-film transistors using polycrystalline silicon.

[0176] An example of an oxide semiconductor that can be used in this specification is InMO3(Z nO) m There are some that are expressed as (m>0). Here, M is gallium (Ga), iron (F e) A metal selected from nickel (Ni), manganese (Mn), and cobalt (Co). Indicates one or more metallic elements. For example, if Ga is selected as M, then only Ga is indicated. In addition to the above case, there are cases where other metal elements besides Ga are selected, such as Ga and Ni, or Ga and Fe. It includes a compound. In addition, in the above oxide semiconductor, in addition to the metal element included as M, impurities The element contains Fe, Ni, or other transition metal elements, or oxides of said transition metals. There is such a thing. In this specification, among the above oxide semiconductors, M is at least gallium Materials containing this material are called In-Ga-Zn-O based oxide semiconductors, and thin films using this material are called In -It is sometimes called a Ga-Zn-O non-single crystal film.

[0177] Furthermore, this embodiment describes an active-matrix type electric field-driven display device. However, the display device in this embodiment may also be a passive matrix type electric field driven display device. .

[0178] Cross-sectional views of the passive matrix type electric field driven display device are shown in Figures 4 and 5, and a top view is shown in Figure 6. As shown below, electrodes 109 and 100 are formed in a stripe pattern, and electrode 101 The electrodes 109 and 100 are formed in a stripe shape extending in a direction perpendicular to them. Electrode 9 can function as an auxiliary electrode, and electrode 100 can function as a pixel electrode. Furthermore, electrode 101 can function as a counter electrode.

[0179] When viewing a passive matrix electric field-driven display device from above or below, the entire pixel area is visible. Electrode 109 or electrode 100 is formed on it. In other words, electrode 101 Electrodes 109 or 100 are formed in all regions opposite to the region where the electrode is formed. In other words, by having such a configuration, an electric field-driven display device with reduced display defects is obtained. It can be obtained.

[0180] Furthermore, this embodiment can be appropriately combined with the configurations shown in other embodiments of this specification. It can be done.

[0181] (Embodiment 4) In this embodiment, one aspect of the electric field-driven display device of the present invention will be described with reference to the drawings. do.

[0182] Figure 27 is a schematic cross-sectional view of one aspect of this embodiment. The conductive layer 400 is of the transistor The source and drain are manufactured using the same materials and the same process. The conductive layer 400 is the capacitive electrode. It is possible to have a function. The conductive layer 400 is titanium, molybdenum, tantalum, chromium Aluminum, tungsten, aluminum, neodymium, copper, silver, gold, platinum, niobium, silicon, albite Lead, iron, barium, germanium, ITO, IZO, zinc oxide (ZnO), or tin oxide. (SnO) is used to form single or multilayer structures by sputtering or CVD methods. It is possible.

[0183] An insulating film 401 is formed on the conductive layer 400. The insulating film 401 functions as a planarizing film. This is possible. The insulating film 401 contains light-shielding materials such as black resin and carbon black, and acrylic. It is preferable to use resin materials such as polyimide and polyamide. Also, insulating film 40 As option 1, it is also possible to use photosensitive acrylic or the like. In addition, the insulating film 401 is light-shielding. A laminated structure of a material or resin material and an inorganic material such as silicon nitride may also be used.

[0184] A conductive layer 402 is formed on the insulating film 401. The conductive layer 402 functions as an auxiliary electrode. This is possible. The conductive layer 402 contains titanium, molybdenum, tantalum, chromium, and tungsten. Aluminum, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, varium Examples include um, germanium, ITO, IZO, zinc oxide (ZnO), or tin oxide (SnO). Conductive materials can be used.

[0185] The conductive layer 400 or conductive layer 402 fills regions 351 and 352 in Figure 21. It is possible to arrange them. As a result, across the entire pixel area in a plane parallel to the substrate This makes it possible to install electrodes such as pixel electrodes and auxiliary electrodes without any gaps.

[0186] An insulating film 403 is formed on the conductive layer 402. The insulating film 403 is made of a silicon oxide-based material or Using silicon nitride-based materials, etc., a single layer is formed by plasma CVD or sputtering. Alternatively, it can be formed in multiple layers.

[0187] Contact holes are formed simultaneously in insulating film 401 and insulating film 403.

[0188] Electrodes 404 are formed to be electrically connected to conductive layers 400 and 402. 404 can function as a pixel electrode. Electrode 404 is made of a light-absorbing material and is shaped accordingly. It is preferable to use chromium, titanium, titanium nitride, molybdenum, tungsten, etc. Materials with low reflectivity such as tantalum, tantalum nitride, etc. are preferred. Note that the conductive layer 402 and It is possible to form the electrode 404 from the same material. This simplifies the manufacturing process. ru.

[0189] The thickness of the insulating film 401, which can function as a planarization film, is approximately 1 μm to 2 μm. Furthermore, the thickness of the insulating film 403 is about a few nm to 2 μm. The insulating film 40 is placed on the conductive layer 400. By forming 1, a conductive layer 402 and an electrode 404 that function as auxiliary electrodes are formed. The surface irregularities can be reduced. By forming the insulating film 401, the conductive layer 4 To reduce the capacitance between 00 and the conductive layer 402 or between the electrode 404 and the conductive layer 400. This allows for the prevention of noise interference and crosstalk.

[0190] Layer 405 and electrode 406 are formed on electrode 404. Layer 405 is a layer containing a display medium. Here, an example is shown in which microcapsules are used as layer 405, but It is also possible to use hops or electron powder fluid (registered trademark). Electrode 406 contains ITO and IZ Translucent materials such as O are used.

[0191] In this embodiment, the step of forming the conductive layer 402 that functions as an auxiliary electrode is increased, and Although the number of masks increases, the insulating film 401 and insulating film 403 are etched simultaneously to create a contour. To form contact holes, the number of masks required for the contact hole formation process does not increase.

[0192] Another aspect of this embodiment will be described with reference to Figure 28.

[0193] Figure 28 shows the electrical contact of the conductive layer 400, conductive layer 402, and electrode 404 shown in Figure 27. The subsequent method is different. Otherwise, it is the same as Figure 27, so the explanation is omitted here. .

[0194] In Figure 27, after the conductive layer 400 and conductive layer 402 are formed, a portion of each is exposed. As shown, contact holes are formed, but in Figure 28, an insulating layer is formed on the conductive layer 400. Contact holes are formed in the film 401 to form a conductive layer 402. Here the conductive layer 4 02 and the conductive layer 400 are electrically connected. Subsequently, an insulating film 403 is formed on the conductive layer 402. This completes the process and forms a contact hole. In the contact hole, the conductive layer 402 and the electrical... Electrode 404 is formed so that it can be connected.

[0195] The conductive layer 400 or conductive layer 402 fills regions 351 and 352 in Figure 21. It is possible to arrange them. As a result, across the entire pixel area in a plane parallel to the substrate This makes it possible to install electrodes such as pixel electrodes and auxiliary electrodes without any gaps.

[0196] Another aspect of this embodiment will be described with reference to Figure 29.

[0197] In Figure 29, the conductive layer 400, conductive layer 402, and electrode 404 shown in Figures 27 and 28 are The method of electrical connection is different. Otherwise, it is the same as Figures 27 and 28. I will omit the explanation here.

[0198] In Figure 29, contact holes are formed in the insulating film 401 formed on the conductive layer 400. A conductive layer 402 is formed. Here, the conductive layer 402 and the conductive layer 400 are electrically connected. Next, an insulating film 403 is formed on the conductive layer 402, and insulating film 401 and insulating film 403 A contact hole is formed that reaches the conductive layer 400. Electrode 404 is formed so as to be electrically connected to 00.

[0199] The conductive layer 400 or conductive layer 402 fills regions 351 and 352 in Figure 21. It is possible to arrange them. As a result, across the entire pixel area in a plane parallel to the substrate This makes it possible to install electrodes such as pixel electrodes and auxiliary electrodes without any gaps.

[0200] One aspect of this embodiment will be described with reference to Figures 30 and 31.

[0201] Figure 30 is a top view of one aspect of this embodiment. Figure 31 shows the IJ cross section of Figure 30. The diagram is shown below. Note that Figure 30 shows gate wires 1215 and 1216, and electrode 120 1. Electrode 1217 and electrode 1218, wiring 1202 and wiring 1219, semiconductor layer 120 4. Semiconductor layer 1220~Semiconductor layer 1224, conductive layer 1205, conductive layer 1206, conductive layer 1 This shows conductive layers 208, 1210, 1211, and 1225 to 1243. Other components will be omitted.

[0202] Furthermore, electrodes 1201, 1217, and 1218 function as gate electrodes. This is possible. Wiring 1202 and wiring 1219 can function as capacitive wiring. Yes, conductive layers 1205, 1225, and 1226 function as source wires. This is possible. Conductive layer 1206, conductive layer 1227, and conductive layer 1228 are drain It can function as an electrode or capacitive wiring. Conductive layer 1208, conductive layer 1229 The conductive layer 1236 can function as an auxiliary electrode. Conductive layer 1210, conductive layer 1211, and conductive layers 1237 to 1243 can function as pixel electrodes. be.

[0203] A conductive film is formed on the substrate 1200. The conductive film is processed into a desired shape and attached to the electrode 1201 and This will be wiring 1202. For the circuit board 1200, a glass substrate, plastic substrate, etc. will be used. This is possible. The conductive film that will form the electrode 1201 and wiring 1202 is made of titanium, molybdenum, and Tungsten, chromium, aluminum, neodymium, copper, silver, gold, platinum, niobium, Silicon, zinc, iron, barium, germanium, indium tin oxide (hereinafter referred to as ITO), Indium zinc oxide (hereinafter referred to as IZO), zinc oxide (ZnO), or tin oxide (SnO) ) can be used to form single or multilayer structures by sputtering or CVD methods, etc. It is possible to do so. Alternatively, an undercoat may be formed on the substrate 1200 before forming the conductive film. For example, an insulating film can be made as a single layer using a silicon oxide-based material film or a silicon nitride-based material film, or It can be formed by layering. Note that silicon oxide-based materials mainly consist of oxygen and silicon. The component is silicon oxide, or silicon oxide that contains nitrogen and has an oxygen content of nitrogen. This refers to silicon oxide nitride in a quantity greater than the nitrogen content. Silicon nitride-based materials are those containing nitrogen and silicon. Silicon nitride mainly composed of or, silicon nitride containing oxygen and nitrogen content is oxygen This refers to silicon nitride oxide in a quantity greater than the specified amount. Note that the electrode 1217 and electrode shown in Figure 30 and 1218, gate wire 1215 and gate wire 1216, and wiring 1219 are connected to electrode 1201 And it is formed in the same process as wiring 1202.

[0204] An insulating film 1203 is formed on the electrode 1201 and the wiring 1202. The insulating film 1203 oxidizes Using silicon-based materials or silicon nitride-based materials, plasma CVD or sputtering It can be formed by methods such as the G method. The insulating film 1203 has the function of a gate insulating film. It is possible to do so. Furthermore, the insulating film 1203 functions as an insulating film with a retaining capacity. It is possible to do so.

[0205] A semiconductor layer 1204 (semiconductor layer 1204a and semiconductor layer 1204b) is placed on an insulating film 1203. The semiconductor layer 1204a and semiconductor layer 1204b are connected to the electrode via the insulating film 1203. It is formed in a position that overlaps with 1201. Note that semiconductor layer 1220 to semiconductor layer 12 shown in Figure 30 Layer 24 is formed in the same process as semiconductor layer 1204a and semiconductor layer 1204b.

[0206] The semiconductor layer 1204 is a non-crystalline semiconductor such as amorphous silicon, microcrystalline Crystalline silicon, polycrystalline silicon, single-crystal silicon, compound silicon such as gallium arsenide (GaAs) Conductors, zinc oxide (ZnO), oxide semiconductors such as In-Ga-Zn-O, or organic semiconductors. While it is possible to use various materials, here we will discuss the case where amorphous silicon is used. I will explain.

[0207] Semiconductor layer 1204a is amorphous silicon, and inkjet It can be formed by a transient or printing method, etc. Note that the semiconductor layer 1204a is transient It is possible to include a portion that functions as the channel area of ​​the sta.

[0208] When amorphous silicon is used as semiconductor layer 1204a, the characteristics of the transistor It has the advantages of high uniformity and low manufacturing costs. In particular, the diagonal length is 50 This is effective when fabricating transistors on large substrates exceeding 0 mm in diameter.

[0209] Semiconductor layer 1204b is silicon containing phosphorus, etc., and has a higher conductivity than semiconductor layer 1204a. High-quality semiconductor materials can be used. Due to its function, the semiconductor layer 1204b can be used F layer or n + It can also be described as a layer. Note that the semiconductor layer 1204b is a source and a drain. It is possible to include a part that functions as a component.

[0210] Next, conductive layer 1205 and conductive layer 1206 are formed. Conductive layer 1205 is used for source and discharge. It is possible to include a portion that functions as one of the rains. The conductive layer 1206 is the source and It is possible to include a portion that functions as the other side of the drain. Also, the conductive layer 1206 is The conductive layer 1205 and conductive layer 1206 are formed so as to partially overlap with the wiring 1202. Tan, molybdenum, tantalum, chromium, tungsten, aluminum, neodymium, copper, silver Gold, platinum, niobium, silicon, zinc, iron, barium, germanium, ITO, IZO, Sputtering or CVD method using zinc oxide (ZnO) or tin oxide (SnO) It can be formed as a single layer or multiple layer by the means of the above. Note that the conductive layer 1225~ shown in Figure 30 The conductive layer 1228 is formed in the same process as conductive layers 1205 and 1206.

[0211] An insulating film 1207 is formed on the conductive layer 1205 and the conductive layer 1206 in a single layer or multiple layers. The insulating film 1207 uses a silicon oxide-based material or a silicon nitride-based material, etc., for plasma CV It can be formed by the D method or sputtering method, etc. Also, as insulating film 1207 The organic material may be formed in a single layer or multiple layers. For example, acrylic, polyimide, polya Mido, polyimideamide, benzocyclobutene, epoxy, etc. can be used. The insulating film 1207 may be a laminated structure of organic material and inorganic material. Also, the insulating film 120 7 may be a light-shielding material or a color filter. Examples include carbon black and organic resins containing black pigments.

[0212] A conductive layer 1208 is formed on the insulating film 1207. The conductive layer 1208 is titanium, molybdenum Tantalum, chromium, tungsten, aluminum, neodymium, copper, silver, gold, platinum, niodium B, silicon, zinc, iron, barium, germanium, ITO, IZO, zinc oxide (ZnO) ), or tin oxide (SnO), are used to create a single layer by sputtering or CVD, etc. It can be formed in multiple layers. The conductive layers 1229 to 1236 shown in Figure 30 are conductive It is formed in the same process as layer 1208.

[0213] An insulating film 1209 is formed on the conductive layer 1208. As the insulating film 1209, silica oxide Using silicon nitride-based materials or silicon nitride-based materials, etc., plasma CVD or sputtering methods, etc. It can be formed by the following. In addition, an organic material can be used as the insulating film 1209 in a single layer or multilayer. It may be formed from acrylic, polyimide, polyamide, polyimideamide, etc. In addition, zocyclobutene, epoxy, etc. can be used. Furthermore, the insulating film 1209 is an organic material. A laminated structure of inorganic material may also be used. Furthermore, a light-shielding material may be used as the insulating film 1209. You may also use the following. As for light-shielding materials, carbon black and organic compounds containing black pigments may be used. Examples include resins, etc.

[0214] Next, the insulating film 1207 and insulating film 1209 are etched to reach the conductive layer 1206. A contact hole and a contact hole reaching the conductive layer 1208 are formed simultaneously. Then, a conductive layer 1210 is formed that is electrically connected to conductive layer 1206 and conductive layer 1208. In the same process as conductive layer 1210, conductive layer 1211, conductive layer 1237 to conductive layer 1 shown in Figure 30 are produced. 243 is formed.

[0215] Here, the conductive layer 1208, which can function as an auxiliary electrode, is visible from the top or bottom. Furthermore, it is also formed in the region of the gap between the conductive layer 1210 and the conductive layer 1211. By using this design, an electric field-driven display device that is less prone to display malfunctions can be obtained.

[0216] A layer 1212 is formed on conductive layer 1210 and conductive layer 1211. Layer 1212 is a display medium. This is a layer containing. Layer 1212, for example, contains dispersed and immobilized microcapsules. The composition and other aspects can be cited.

[0217] Next, a conductive layer 1213 is formed on layer 1212. The conductive layer 1213 is made of titanium. Molybdenum, tantalum, chromium, tungsten, aluminum, neodymium, copper, silver, gold Metal materials such as platinum, niobium, silicon, zinc, iron, barium, germanium, ITO, Translucent materials such as IZO can be used.

[0218] A protective body 1214 is formed on the conductive layer 1213. The protective body 1214 has a plastic base Boards, resin substrates, film substrates, glass substrates, etc., can be used.

[0219] The thickness of insulating film 1207, which can function as a planarizing film, is approximately 1 μm to 2 μm. Furthermore, the thickness of the insulating film 1209 is approximately a few nm to 2 μm. The conductive layer 1205 and conductive By forming an insulating film 1207 on layer 1206, a conductive layer that functions as an auxiliary electrode is formed. The surface irregularities forming 1208 can be reduced. Therefore, the capacitance between conductive layer 1206 and conductive layer 1208 or conductive layer 1206 and conductive layer 121 This reduces the capacitance to zero, preventing noise interference and crosstalk. .

[0220] In Figure 30, the conductive layer 1231 partially overlaps with the conductive layer 1238 and the conductive layer 1211. They are arranged in such a way. Also, conductive layer 1232 is connected to conductive layer 1238, conductive layer 1239, The conductive layer 1211 and conductive layer 1210 are arranged so as to partially overlap with each other. Layer 1233 consists of conductive layer 1239, conductive layer 1240, conductive layer 1210, and conductive layer 1237 They are arranged so that they partially overlap. Also, the conductive layer 1229 is connected to the conductive layer 1211 and the conductive layer 1229. It is positioned so as to partially overlap with the conductive layer 1241. Also, the conductive layer 1208 is conductive layer 1 211, conductive layer 1210, conductive layer 1241, and conductive layer 1242 are arranged so that they partially overlap. It is placed there. Also, conductive layer 1230 is conductive layer 1210, conductive layer 1237, conductive layer 12 42, and are arranged so as to partially overlap with the conductive layer 1243. Also, conductive layer 1234 It is arranged so as to partially overlap with the conductive layer 1241. Also, the conductive layer 1235 is conductive The electrical layer 1241 and the conductive layer 1242 are arranged so as to partially overlap. 236 is positioned so as to partially overlap with conductive layers 1242 and 1243.

[0221] By adopting this configuration, a display device with reduced display defects can be obtained. .

[0222] Furthermore, this embodiment can be appropriately combined with the configurations shown in other embodiments of this specification. It can be done.

[0223] (Embodiment 5) Figure 40 is a top view of one embodiment of the electric field-driven display device of the present invention. In this embodiment, This section describes the arrangement of electrodes that function as auxiliary electrodes.

[0224] As shown in Figure 40(A), gate electrode 1401 and gate electrode 1402, gate wire 1 403 and gate line 1404 are formed. A semiconductor layer 140 is placed on gate electrode 1401. 5 is formed, and a semiconductor layer 1406 is formed on the gate electrode 1402. Semiconductor layer 1 Source electrode 1407 and drain electrode 1408 are formed on 405. Semiconductor layer 1 A source electrode 1409 and a drain electrode (not shown) are formed on 406. Electrode 1407 and source electrode 1409 are also called source wires. An insulating layer is placed on drain electrode 1408. An electrode 1410 is formed that is electrically connected to the drain electrode 1408 via a rim film. Electrodes 1411 to 1413 are formed in the same process as electrode 1410. An electrode 1414 is formed thereon, electrically connected to electrode 1410 via an insulating film. Electrodes 1415 to 1417 are formed in the same process as electrode 1414. Electrodes 1410 to 1417 are formed in the same process. Electrodes 1413 can function as pixel electrodes. Electrodes 1414 to 1417 are complementary. It can function as an auxiliary electrode.

[0225] The gap between a pixel electrode and an adjacent pixel electrode exists in the gate line direction and the source line direction. For example, when viewed from the center of electrode 1410, the gap between electrode 1410 and electrode 1412 is the gate line The wires extend in that direction, and the gap between electrode 1410 and electrode 1413 extends in the direction of the source wire. As shown in Figure 40(A), the gap between the pixel electrode and the adjacent pixel electrode is in the source line direction. An auxiliary electrode may be placed in the gap that extends in that direction. In Figure 40(A), electrode 1410 and electrode 1 Electrode 1414 is placed in the gap with 413, and electrode 1411 is placed in the gap with electrode 1412. Electrode 1415 is positioned. Electrode 1416 is located next to electrode 1412 and the electrode to the right of electrode 1412. It is positioned in the gap between (not shown) electrode 1410 and electrode 1410 It is positioned in the gap between it and the electrode to its right (not shown).

[0226] Figure 40(B) shows an example in which auxiliary electrodes are placed in a gap extending in the direction of the gate line.

[0227] In Figure 40(B), gate electrode 1451 and gate electrode 1452, gate line 145 3 and gate line 1454 are formed. A semiconductor layer 1455 is formed on gate electrode 1451. A semiconductor layer 1456 is formed on the gate electrode 1452. Source electrode 1457 and drain electrode 1458 are formed on 5. Semiconductor layer 145 A source electrode 1459 and a drain electrode (not shown) are formed on 6. Source electrode 1457 and the source electrode 1459 are also called source wires. An insulating film is placed on the drain electrode 1458. An electrode 1460 is formed, electrically connected to the drain electrode 1458 via this. Electrodes 1461 to 1463 are formed in the same process as electrode 1460. An electrode 1464 is formed thereon, electrically connected to electrode 1460 via an insulating film. Electrodes 1465 to 1467 are formed in the same process as electrode 1464. Electrodes 1460 to 1467 are formed in the same process. Electrodes 1463 can function as pixel electrodes. Electrodes 1464 to 1467 are complementary. It can function as an auxiliary electrode. Electrode 1 is placed in the gap between electrode 1460 and electrode 1462. 465 is located there.

[0228] By adopting this configuration, a display device with reduced display defects can be obtained. .

[0229] Furthermore, this embodiment can be appropriately combined with the configurations shown in other embodiments of this specification. It can be done.

[0230] (Embodiment 6) Figures 32 to 34 are schematic cross-sectional views of one embodiment of the electric field-driven display device of the present invention.

[0231] Figures 32(A) and (B) show the electrode 505 side which can function as a counter electrode. This shows a structure that allows for this.

[0232] The structure shown in Figure 32(A) will be described. An electrode 501 is formed on the insulating film 500. An insulating film 502 is formed on the electrode 501. Contact holes are formed in the insulating film 502, and An electrode 503 is formed that is electrically connected to electrode 501. A layer 504 is formed on electrode 503. Layer 504 is a layer containing a display medium. An electrode 505 is formed on layer 504. Insulating film 506R, insulating film 506G, and insulating film 506B are formed on 5. Electrode 01 functions as an auxiliary electrode, electrode 503 functions as a pixel electrode, and electrode 505 is a counter electrode. It can function as a pole.

[0233] In Figure 32(A), one or both of the insulating film 500 and insulating film 502 are made light-shielding. It may be formed using materials that have light-shielding properties. Examples of light-shielding materials include carbon black. Examples include organic resins containing black pigment. The insulating film 506R is used as a red color filter. It is possible for it to function. The insulating film 506G can function as a green color filter. This is possible. The insulating film 506B can function as a blue color filter. .

[0234] Figure 32(B) shows the positions that form insulating film 506R, insulating film 506G, and insulating film 506B. The arrangement is different from that in Figure 32(A). In Figure 32(B), the insulating film 506R is placed on the electrode 503. Insulating film 506G and insulating film 506B are formed.

[0235] Figures 33(A) and (B) show the electrode 513 side which can function as a pixel electrode. This shows a structure that allows for this.

[0236] Figure 33(A) will be explained. Insulating film 510R, insulating film 510G, and insulating film 510 An electrode 511 is formed on B. An insulating film 512 is formed on the electrode 511. A contact hole is formed, and an electrode 513 is formed that is electrically connected to electrode 511. A layer 514 is formed on the pole 513. Layer 514 is a layer containing a display medium. An electrode 515 is formed. An insulating film 516 is formed on the electrode 515. Note that electrode 511 is auxiliary. Electrode 513 functions as an electrode, and electrode 515 functions as a counter electrode. It is possible to do so. The insulating film 510R functions as a red color filter, and the insulating film 510G functions as a green color filter, and insulating film 510B functions as a blue color filter. It can function as such. In addition, the insulating film 516 is made of a light-shielding material. It may be formed. As a light-shielding material, it may be an organic material containing carbon black or black pigment. Examples include resins, etc.

[0237] Figure 33(B) will be explained. An electrode 511 is formed on the insulating film 510. Electrode 511 Insulating film 512R, insulating film 512G, and insulating film 512B are formed on top. Contact holes are formed in the insulating film 512G and insulating film 512B, and electricity is supplied to the electrode 511. An electrode 513 is formed to be connected to the target. A layer 514 is formed on the electrode 513. The layer 514 is This is a layer containing a display medium. An electrode 515 is formed on layer 514. An insulating film 5 is formed on the electrode 515. Form 16. Note that electrode 511 functions as an auxiliary electrode, and electrode 513 is a pixel electrode. It functions as such, and electrode 515 can function as a counter electrode. Insulating film 512R is red The insulating film 512G functions as a color filter, and the insulating film 512G functions as a green color filter. Furthermore, the insulating film 512B can function as a blue color filter. The film 516 may be formed using a light-shielding material. Examples include carbon black and organic resins containing black pigments.

[0238] Figures 34(A) and (B) show the electrode 526 side and the pixel, which can function as a counter electrode. This shows a structure where the indicator is displayed on the electrode 524 side, which can function as an electrode. To prevent the background from showing through when viewed from one side, polarizing plates are placed on both sides. This is possible.

[0239] Figure 34(A) will be explained. Layer 521 is formed on substrate 520. Layer 521 is TF This is a layer containing T, etc. An electrode 522 is formed on layer 521. The diagram shows that 2 is formed, and electrode 522 is the source electrode of the TFT contained in layer 521. Alternatively, it may be a drain electrode. Also, electrode 522 is a saw of the TFT contained in layer 521 It is electrically connected to the drain electrode or the suction electrode. An insulating film 523 is formed on the electrode 522. A contact hole is formed in the insulating film 523, and the electrode is electrically connected to the electrode 522. Form 524. Form layer 525 on electrode 524. Layer 525 is a layer containing a display medium. Yes. An electrode 526 is formed on layer 525. A substrate 527 is formed on electrode 526. 520 and the substrate 527 can be made of glass, plastic, or the like. Electrode 5 Electrode 22 functions as an auxiliary electrode, electrode 524 functions as a pixel electrode, and electrode 526 is a counter electrode. It can function as a pole. A polarizing plate 528 is provided in contact with the substrate 520, and the substrate A polarizing plate 529 is provided in contact with 527. Polarizing plate 528 and polarizing plate 529 are polarizing The axes are orthogonal, forming a crossed nicol.

[0240] Figure 34(B) shows the same configuration as Figure 34(A) but with a color filter added. In B), a color filter 530R and a color filter 530 are placed between the substrate 520 and the layer 521. G, a color filter 530B is provided, and a color filter 5 is placed between the substrate 527 and the electrode 526. It is equipped with color filter 31R, color filter 531G, and color filter 531B. The Ta530R and color filter 531R are red color filters, and color filters 530G and color filter 531G are green color filters, and color filter 5 30B and color filter 531B are blue color filters.

[0241] By arranging polarizing plates on both substrates in this way, a display device that is less transparent to the background can be created. It can be obtained.

[0242] Furthermore, this embodiment can be appropriately combined with the configurations shown in other embodiments of this specification. It can be done. Note that the content described in this embodiment is just one example and is not limited thereto. stomach.

[0243] (Embodiment 7) In this embodiment, the positional relationship between the pixel electrode and the auxiliary electrode of the electric field driving type display device of the present invention will be described with reference to the drawings. Refer to the drawings for the description.

[0244] In FIG. 35(A), an insulating film 1002 is formed on the electrode 1001. A contact hole is formed in the insulating film 1002, and an electrode 1003 is formed so as to be electrically connected to the electrode 1001. An electrode 1003 is formed such that a contact hole is formed in the insulating film 1002 and is electrically connected to the electrode 1001. A layer 1004 is formed on the electrode 1003. The layer 1004 is a layer containing a display medium. An electrode 1005 is formed on the layer 1004. The electrode 1006 is an electrode of an adjacent pixel formed in the same process as the electrode 1003. The electrode 1001 overlaps the region between the electrode 1003 and the electrode 1006 and is formed so as to partially overlap the electrode 1006. The electrode 1001 functions as an auxiliary electrode, the electrodes 1003 and 1006 function as pixel electrodes, and the electrode 1005 can function as a counter electrode. In this specification, the auxiliary electrode means an electrode having the same area as the pixel electrode or smaller than the area of the pixel electrode. The electrode 1001 functions as an auxiliary electrode, the electrodes 1003 and 1006 function as pixel electrodes, and the electrode 1005 can function as a counter electrode. In this specification, the auxiliary electrode means an electrode having the same area as the pixel electrode or smaller than the area of the pixel electrode. Let the length of the overlap between the electrode 1001 and the electrode 1006 be Q1. Let the length between the electrode 1006 and the electrode 1003 be Q2. Let the film thickness of the insulating film 1002 be Q3. At this time, it can be formed so as to have a region where the electrode 1001 and the electrode 1006 overlap (Q1>0), and it is possible to form a region such that Q1<Q2. Therefore, manufacturing variations can be reduced. Furthermore, since an electric field can be applied almost uniformly to the display medium contained in the layer 1004, an electric field driving type display device in which afterimages are unlikely to occur can be manufactured. <00018​​​​​​​​​​​​​​​​​​​ Considering the influence of the parasitic capacitance generated by the overlap of 1001 and the electrode 1006, Q1 It is preferably formed to have a region such that <Q3.

[0246] Also, from the length from the portion (contact portion) where the wiring electrically connecting the electrode 1003 and the electrode 1001 is provided to the electrode 1006, the length where the electrode 1001 does not overlap with the electrode 1003 (let the length between the electrode 1006 and the electrode 1003 be Q2) is subtracted, that is, the length where the electrode 1003 and the electrode 1001 overlap is Q4. Let the distance from the contact portion of the electrode 1003 to the end of the electrode 1001 be Q5. Considering mask deviation and the like, it is preferable that Q4>0 and Q5>0. At this time, it is preferable to have a region such that Q1<Q4 and Q1<Q5. However, one aspect of this embodiment is not limited to these.

[0247] For another example, it will be described using FIG. 35(B). In FIG. 35(B), the formation position of the electrode 1001 is different from that in FIG. 35(A). The electrode 1001 is electrically connected to the electrode 1003, partially overlaps the region between the electrode 1003 and the electrode 1006, and is formed so as not to overlap with the electrode 1006. Also in FIG. 35(B), the electrode 1001 functions as an auxiliary electrode, the electrodes 1003 and 1006 function as pixel electrodes, and the electrode 1005 can function as a counter electrode. <000​​​​​​​​Let the length of the region where the electrode 1001 is not formed be Q8. Note that Q6 > Q7 and Q 6 > Q8. Also, in order to apply an electric field almost uniformly to the display medium contained in layer 1004, it is preferable to have a region such that Q7 > Q8, but it is not limited thereto. Also, at a position overlapping with the region between electrode 1003 and electrode 1006, a region where the electrode 1001 is not formed is provided (Q8 > 0), and it can be formed to have a region such that Q3 > Q8. Thus, the influence of crosstalk between a pixel (a pixel including electrode 1003) and an adjacent pixel (a pixel including electrode 10 06) can be reduced. Also, from the length from the portion (contact portion) where the wiring for electrically connecting electrode 1003 and electrode 1001 is provided to electrode 1006, subtract the length between electrode 1003 and electrode 1006 (Q6), that is, let the length where electrode 1003 and electrode 1001 overlap be Q

[0249] 9. Let the distance from the contact portion of electrode 1003 to the end of electrode 1001 be Q10. Q9 and Q10 preferably have regions such that Q9 > 0 and Q10 > 0 in consideration of mask misalignment and the like, but are not limited thereto. At this time, it is preferable to have a region satisfying Q8 < Q9, Q8 < Q 10, Q7 < Q9, and Q7 < Q10, but is not limited thereto. In this way, the electrode 1001 may be formed so as to overlap the entire region between the electrode 1003 and the adjacent electrode 1006, or the electrode 1001 may be formed so as to partially overlap. The electrode 1001 is formed so as to partially overlap the region between the electrode 1003 and the adjacent electrode 1006.

[0250] [[ID=3Y]] ​​​​​​​Even if this occurs, between electrode 1003 and the adjacent electrode 1006, electrode 1001 As a result, an electric field is generated, which prevents afterimages from occurring compared to when electrode 1001 is not formed. We can manufacture load-field driven display devices.

[0251] Furthermore, this embodiment can be appropriately combined with the configurations shown in other embodiments of this specification. It can be done.

[0252] (Embodiment 8) In this embodiment, the fabrication process for a display device using amorphous silicon TFTs is described. Let me explain the process.

[0253] As shown in Figure 36(A), after forming a conductive film on the substrate 1100, the conductive film is then treated as desired. By processing (patterning) the shape, electrode 1101, electrode 1102, conductive layer 1121 , and a conductive layer 1122 is formed on the substrate 1100. Glass substrates such as aluminoborosilicate glass, ceramic substrates, and plastic substrates. The like can be used. Electrodes 1101 and 1102 function as gate electrodes. This is possible. Electrode 1101, electrode 1102, conductive layer 1121, and conductive layer 1122 Examples of conductive films include titanium, molybdenum, tantalum, chromium, tungsten, and aluminum. Umium, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, germanium Um, indium tin oxide (hereinafter, ITO), indium zinc oxide (hereinafter, IZO) Using zinc oxide (ZnO) or tin oxide (SnO), sputtering or CVD It can be formed in a single layer or multiple layers according to the law, etc.

[0254] Insulation covering electrode 1101, electrode 1102, conductive layer 1121, and conductive layer 1122 A film 1103 is formed. The insulating film 1103 is made of a silicon oxide-based material or a silicon nitride-based material. Using the above, a single layer or multiple layers are formed by plasma CVD or sputtering. It is possible for the insulating film 1103 to function as a gate insulating film. Furthermore, when conductive layers 1121 and 1122 are used as electrodes for retaining capacitance, The insulating film 1103 formed in contact with the conductive layer functions as an insulating film for retaining capacitance. It is possible.

[0255] A semiconductor film 1104 is formed on the insulating film 1103. The thickness of the semiconductor film 1104 is 20 nm. The thickness shall be ~200 nm (preferably 50 nm to 150 nm). The semiconductor film 1104 is: Amorphous silicon is produced by photolithography, inkjet printing, or other methods. To form.

[0256] Next, a semiconductor film 1105 is formed on the semiconductor film 1104. The semiconductor film 1105 is phosphorus Using semiconductor materials with higher conductivity than silicon, semiconductor film 1104, etc. can.

[0257] The insulating film 1103 to the semiconductor film 1105 are formed continuously without exposure to the atmosphere. It is possible to do so. In other words, it is contaminated by atmospheric components and impurity elements suspended in the atmosphere. Since each layer interface can be formed without any issues, variations in transistor characteristics are reduced. It is possible.

[0258] As shown in Figure 36(B), a mask 1106 is formed, and the semiconductor film 1104 and semiconductor film 1105 is processed (patterned) into the desired shape to form semiconductor film 1104 and semiconductor film 11 05 is separated into island-like segments, and semiconductor layers 1107 and 1108 are formed.

[0259] As shown in Figure 36(C), after removing the mask 1106, the conductive film 1109 is formed. The conductive film 1109 is made of titanium, molybdenum, tantalum, chromium, tungsten, and aluminum. Umium, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, germanium Using um, ITO, IZO, zinc oxide (ZnO), or tin oxide (SnO), spa It can be formed in single or multilayer forms by methods such as taring or CVD.

[0260] As shown in Figure 36(D), a mask 1110 is formed. The mask 1110 is a conductive film 1 By patterning 109, it can function as a source electrode or drain electrode. This is a mask for forming possible electrodes, and at the same time removes a portion of the semiconductor layer 1108. It is used in combination as an etching mask for forming channel regions. Conductive film 1 109 is patterned to become electrodes 1109a to 1109e. Electrode 1109b and Electrode 1109d can function as an auxiliary electrode.

[0261] As shown in Figure 36(E), after removing the mask 1110, the insulating film 1111 is formed. The insulating film 1111 is made of silicon nitride, etc., by sputtering or glow discharge decomposition. This forms the insulating film 1111, which protects the channel region. ru.

[0262] Furthermore, the semiconductor layer 1107 includes a portion that functions as the channel region of the transistor. This is possible, and the semiconductor layer 1108 functions as the source and drain regions of the transistor. It is possible to include a part that is capable of doing so.

[0263] Next, an insulating film 1112 is formed. The insulating film 1112 is made of silicon oxide-based material or silicon nitride. Formed using recon-based materials, etc., by plasma CVD or sputtering. This can be achieved. Alternatively, an organic material may be formed as the insulating film 1112 in a single layer or multiple layers. For example, acrylic, polyimide, polyamide, polyimideamide, benzocyclobutene, Epoxy or the like can be used. In addition, the insulating film 1112 is a laminate of organic material and inorganic material. It may also be used as a structure. Furthermore, a light-shielding material may be used as the insulating film 1112. Examples of photosensitive materials include carbon black and organic resins containing black pigments. Furthermore, it is preferable to provide an insulating film 1113 on the insulating film 1112. Insulating film 1113 By forming this, it is possible to prevent the intrusion of moisture, etc. The insulating film 1113 is nitride It is preferable to use silicon or the like.

[0264] Next, insulating film 1111, insulating film 1112, and insulating film 1113 are patterned, An opening is formed so that pole 1109b and electrode 1109d are partially exposed. In this section, electrode 1114 is electrically connected to electrode 1109b, and electrode 1109d is electrically connected to electrode 1109d. Electrodes 1114 and 1115 are formed as pixel electrodes. It is possible for it to function.

[0265] As shown in Figure 37, layer 1116 and conductive film 1119 are placed on electrodes 1114 and 1115. , and the substrate 1120 is formed, placed, or attached. Layer 111 Layer 6 is a layer containing the display medium. Here, microcapsules 1118 are mixed with dispersant 1117. This shows a fixed configuration.

[0266] The conductive film 1119 can be titanium, molybdenum, tantalum, chromium, tungsten, and Aluminum, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, gelatin Using luminium, ITO, IZO, zinc oxide (ZnO), or tin oxide (SnO), It can be formed in a single layer or multiple layers. The conductive film 1119 functions as a counter electrode. This is possible.

[0267] The substrate 1120 includes plastic substrates, resin substrates, film substrates, glass substrates, and ceramic substrates. Black substrates, stainless steel substrates, stainless foil substrates, etc., can be used.

[0268] Based on the above, a display device using amorphous silicon TFTs can be fabricated.

[0269] Furthermore, this embodiment can be appropriately combined with the configurations shown in other embodiments of this specification. It can be done. Note that the content described in this embodiment is just one example and is not limited thereto. stomach.

[0270] (Embodiment 9) In this embodiment, the process for manufacturing a display device using an oxide semiconductor TFT is described below. I will explain.

[0271] As shown in Figure 38(A), after forming a conductive film on the substrate 1300, the conductive film is then treated as desired. By processing (patterning) the shape, electrode 1301, electrode 1302, conductive layer 1319 , and a conductive layer 1320 is formed on the substrate 1300. Glass substrates such as aluminoborosilicate glass, ceramic substrates, and plastic substrates. The like can be used. Electrodes 1301 and 1302 function as gate electrodes. This is possible. Electrode 1301, electrode 1302, conductive layer 1319, and conductive layer 1320 Examples of conductive films include titanium, molybdenum, tantalum, chromium, tungsten, and aluminum. Umium, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, germanium Um, indium tin oxide (hereinafter, ITO), indium zinc oxide (hereinafter, IZO) Using zinc oxide (ZnO) or tin oxide (SnO), sputtering or CVD It can be formed in a single layer or multiple layers according to the law, etc.

[0272] Insulation covering electrode 1301, electrode 1302, conductive layer 1319, and conductive layer 1320 A film 1303 is formed. The insulating film 1303 is made of a silicon oxide-based material or a silicon nitride-based material. Using the above, a single layer or multiple layers are formed by plasma CVD or sputtering. It is possible for the insulating film 1303 to function as a gate insulating film. Furthermore, when conductive layers 1319 and 1320 are used as electrodes for retaining capacitance, The insulating film 1303 formed in contact with the conductive layer functions as an insulating film for retaining capacitance. It is possible.

[0273] A semiconductor film 1304 is formed on the insulating film 1303. The semiconductor film 1304 is transparent. It is formed in a single layer or multiple layers using a material with high light transmittance or a material with high light transmittance. Semiconductor film 130 4 is formed using an oxide semiconductor. For example, In-Ga-Zn is used as the oxide semiconductor. -O series, In-Sn-Zn-O series, In-Al-Zn-O series, Sn-Ga-Zn-O series, Al-Ga-Zn-O series, Sn-Al-Zn-O series, In-Zn-O series, Sn-Zn-O Materials such as Al-Zn-O, In-O, Sn-O, and Zn-O can be used. Oxide semiconductor films are fabricated under a rare gas (typically argon) atmosphere, an oxygen atmosphere, or a rare gas atmosphere. Formed by sputtering in a gas (typically argon) and oxygen atmosphere. It is possible to do so. Also, when using the sputtering method, silicon oxide must be 2% by weight or more. Film deposition is performed using a target containing 0% by weight or less, inhibiting crystallization in the oxide semiconductor film. It is preferable to include harmful silicon oxide. This suppresses crystallization. Yes, it is possible. Also, before depositing the semiconductor film 1304, argon gas is introduced to generate plasma. By performing reverse sputtering, dust adhering to the surface of the insulating film 1303 can be removed. Preferred. Reverse sputtering is a process where a voltage is not applied to the target side, and the substrate is subjected to an argon atmosphere. A method of modifying the surface by applying a voltage using an RF power supply to form plasma near the substrate. In addition, nitrogen, helium, oxygen, etc. may be used instead of an argon atmosphere.

[0274] As shown in Figure 38(B), a mask 1305 is formed and the semiconductor film 1304 is shaped to a desired form. By processing (patterning), the semiconductor film 1304 is separated into island-like structures, and the semiconductor layer 1306 It is formed.

[0275] As shown in Figure 38(C), after removing the mask 1305, the conductive film 1307 is formed. The conductive film 1307 is made of titanium, molybdenum, tantalum, chromium, tungsten, and aluminum. Umium, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, germanium Using um, ITO, IZO, zinc oxide (ZnO), or tin oxide (SnO), spa It can be formed in single or multilayer forms by methods such as taring or CVD.

[0276] As shown in Figure 38(D), a mask 1308 is formed. The mask 1308 is a conductive film 1 By patterning 307, it can function as either a source electrode or a drain electrode. This is a mask for forming possible electrodes. The conductive film 1307 is patterned, and electrode 1 Electrodes 309a through 1309e are used. Electrodes 1309b and 1309d are used as auxiliary electrodes. It is possible for it to function.

[0277] As shown in Figure 38(E), after removing the mask 1308, the insulating film 1310 is formed. The insulating film 1310 is made using a silicon oxide-based material or a silicon nitride-based material, etc., and is plasma-based. It can be formed by CVD or sputtering, etc. Also, insulating film 1310 and The organic material may be formed in a single layer or multiple layers. For example, acrylic, polyimide, por Polyamides, polyimideamides, benzocyclobutenes, epoxy, etc., can be used. Furthermore, the insulating film 1310 may have a laminated structure of organic material and inorganic material. A light-shielding material may be used as 310. Examples of light-shielding materials include carbon Examples include black, organic resins containing black pigment, etc. Furthermore, an insulating film 1310 is placed on top of the insulating film 1310. It is preferable to provide the film 1311. By forming the insulating film 1311, moisture penetration is prevented. This can prevent the following. It is preferable to use silicon nitride or the like as the insulating film 1311. .

[0278] Next, the insulating film 1310 and insulating film 1311 are patterned, and the electrode 1309b and the electrode An opening is formed so that electrode 1309d is partially exposed. And in this opening, electrode 13 Electrode 1312 electrically connected to 09b, and electrode 13 electrically connected to electrode 1309d Electrodes 1312 and 1313 form 13. Electrodes 1312 and 1313 can function as pixel electrodes. That is the case.

[0279] As shown in Figure 39, layer 1314 and conductive film 1317 are placed on electrodes 1312 and 1313. , and substrate 1318 is formed, placed, or attached. Layer 131 Layer 4 is a layer containing the display medium. Here, microcapsules 1316 are mixed with dispersant 1315. This shows a fixed configuration.

[0280] The conductive film 1317 includes titanium, molybdenum, tantalum, chromium, tungsten, and Aluminum, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, gelatin Using luminium, ITO, IZO, zinc oxide (ZnO), or tin oxide (SnO), It can be formed in a single layer or multiple layers. The conductive film 1317 functions as a counter electrode. This is possible.

[0281] Substrate 1318 includes plastic substrates, resin substrates, film substrates, glass substrates, etc. Laminate substrates, stainless steel substrates, stainless steel foil substrates, etc., can be used.

[0282] Based on the above, a display device using a TFT made of oxide semiconductor can be fabricated.

[0283] TFTs using oxide semiconductors have better light transmission compared to TFTs using amorphous silicon, etc. The overflow rate is high. When TFTs using oxide semiconductors are applied, the wiring material must be a light-transmitting material. Using a material with high light transmittance, it can also be used as a display device with the TFT substrate side as the display surface. stomach.

[0284] Conductive layer 1319, conductive layer 1320, electrode 1309b, and electrode 1309d are made of a transparent conductive material. It can be formed from a material, and electrodes 1301 and 1302 can also be formed from a metallic material. By forming the elements within the element with a transparent material, the aperture ratio can be improved. Furthermore, by forming the wiring portion with a metal material, the resistance can be reduced.

[0285] Furthermore, this embodiment can be appropriately combined with the configurations shown in other embodiments of this specification. It can be done. Note that the content described in this embodiment is just one example and is not limited thereto. stomach.

[0286] (Embodiment 10) The display device shown in the above embodiment can be used in any field of electronics as long as it displays information. It can be used in equipment. For example, using the display device shown in the above embodiment, Children's books (e-books), posters, advertisements inside trains and other vehicles, credit cards, etc. Various types of cards can be displayed and shown.

[0287] Figure 41(A) shows a poster 1501 equipped with a display device. The advertising medium is paper In the case of printed materials, the replacement of advertisements is done manually, but as shown in the above embodiment... Using a display device, the advertisement display can be changed in a short time. Also, the display will not be distorted. A stable image can be obtained without any problems. Furthermore, the poster can be configured to transmit and receive information wirelessly. good.

[0288] Figure 41(B) also shows in-vehicle advertisements 1502 on trains and other vehicles. Advertising media If it is a printed paper document, the advertisement is changed manually, but in the above embodiment... Using the display device shown, it is possible to change the advertisement display in a short time without requiring much manpower. Yes, it is possible. Furthermore, a stable image can be obtained without any display distortion. In addition, in-car advertisements are transmitted wirelessly. It may also be configured to allow information to be sent and received.

[0289] Figure 42(A) shows an example of an e-book. The e-book shown in Figure 42(A) has a housing. It consists of two enclosures, enclosure 1600 and enclosure 1601. Enclosure 1600 and enclosure 1 601 is integrated with hinge 1604, allowing it to open and close. This configuration allows it to function like a physical book.

[0290] The display unit 1602 is incorporated into the housing 1600, and the display unit 1603 is incorporated into the housing 1601. It is included. Display units 1602 and 1603 are configured to display a continuation screen. Alternatively, a configuration that displays different screens is also acceptable. For example, text is displayed on the right-hand display unit (display unit 1602 in Figure 42(A)), and on the left Images can be displayed on the side display unit (display unit 1603 in Figure 42(A)).

[0291] Furthermore, Figure 42(A) shows an example in which the housing 1600 is equipped with an operating section, etc. The chassis 1600 is equipped with a power supply 1605, operation keys 1606, speaker 1607, etc. The page can be advanced using operation key 1606. Note that the display unit is on the same side as the casing. It may also be configured to include a keyboard and pointing device. External connection terminals (earphone jack, USB terminal, or AC adapter and U) are located on the front or sides. It includes terminals that can connect to various cables such as SB cables, and a recording medium insertion section. It may also be structured as such. Furthermore, the e-book shown in Figure 42(A) has the function of an electronic dictionary. It can also be a structured arrangement.

[0292] Furthermore, the e-book shown in Figure 42(A) may be configured to transmit and receive information wirelessly. Wirelessly, users can purchase and download desired book data from an e-book server. It is also possible to consider it a success.

[0293] Figure 42(B) shows an example of a digital photo frame. For example, Figure 42(B) The digital photo frame shown has a display unit 1612 incorporated into the housing 1611. The display unit 1612 is capable of displaying various images, such as those from a digital camera. By displaying the image data taken with it, it can function just like a regular photo frame. Cut.

[0294] The digital photo frame shown in Figure 42(B) includes an operating unit and an external connection terminal (US (B terminal, terminals that can connect to various cables such as USB cables, etc.), recording media insertion slot, etc. It is preferable to have a configuration that includes such features. These features may be incorporated on the same surface as the display unit. However, it is preferable to place them on the sides or back as this improves the design. For example, digital cameras The memory containing image data captured by a digital camera is inserted into the recording medium insertion section of the frame. Insert the image data and display the captured image data on the display unit 1612. It is possible.

[0295] Furthermore, the digital photo frame shown in Figure 42(B) is configured to send and receive information wirelessly. It is also possible to configure the system to acquire and display desired image data wirelessly. can.

[0296] Figure 42(C) shows an example of a television setup. The control device has a display unit 1622 incorporated into the housing 1621. The display unit 1622 It is possible to display video. Also, here, the stand 1623 is used for the enclosure 162 The structure supports option 1.

[0297] The television equipment shown in Figure 42(C) is operated using the control switches provided on the housing 1621. This can be done using a separate remote control unit. The remote control unit has operation keys. It allows you to control channels and volume. It also has control keys on the remote control unit. This allows the video displayed on the display unit 1622 to be operated. Furthermore, remote control operation is also possible. The device may also be configured to include a display unit that displays information output from the remote control unit. .

[0298] The television system shown in Figure 42(C) is configured to include a receiver, modem, and the like. It is also possible to receive general television broadcasts using a receiver, and furthermore, via a modem... By connecting to a wired or wireless communication network, one-way communication (from the sender to the receiver) is possible. (Believers) or two-way information communication (between sender and receiver, or between receivers, etc.) It is also possible.

[0299] Figure 42(D) shows an example of a mobile phone. The mobile phone shown in Figure 42(D) is In addition to the display unit 1632 incorporated into the housing 1631, there are also operation buttons 1633 and 16 It features 37, an external connection port 1634, a speaker 1635, a microphone 1636, and other components.

[0300] The mobile phone shown in Figure 42(D) has a touch panel display unit 1632, which allows you to touch it with your finger. The display content of the display unit 1632 can be operated by any contact. Also, telephone calls can be made. Alternatively, emails can be created by touching the display unit 1632 with a finger or the like. ru.

[0301] The display unit 1632 has three main modes. The first mode is for displaying images. This is the primary display mode. The second mode is the input mode, which is primarily for inputting information such as characters. The third mode is a mixed mode of display mode and input mode. be.

[0302] For example, when making a phone call or composing an email, the display unit 1632 is used for text input. This should be the primary input mode, and you should perform the input operation for the characters displayed on the screen. In this case, the table It is preferable to display a keyboard or number buttons in most of the screen area of ​​the display unit 1632. It seems so.

[0303] Furthermore, the mobile phone shown in Figure 42(D) has a tilt sensor with a gyroscope and accelerometer inside. By installing a detection device equipped with a sensor, the orientation (vertical or horizontal) of the mobile phone can be determined. This will cause the display unit 1632 to automatically switch modes (or display information). It is possible.

[0304] Furthermore, the screen mode can be switched by touching the display unit 1632 or by operating the housing 1631. This is done by operating the action button 1637. Also, the type of image displayed on the display unit 1632 It can also be configured to switch between modes. For example, if the image signal displayed on the display unit is a video If the data is in a specific format, you can switch to display mode; if it's text data, you can switch to input mode. Cut.

[0305] Furthermore, in input mode, the signal detected by the optical sensor of the display unit 1632 is detected and displayed If there is no input via touch operation on the display unit 1632 for a certain period of time, the screen mode will change to input mode. You may also control the system to switch from the "Do" display mode to the "Display Mode".

[0306] The display unit 1632 can also function as an image sensor. For example, the display unit 1 By touching the 632 with your palm or fingers, the palm print, fingerprints, etc. are captured by the image sensor. Human authentication can be performed. In addition, the display unit has a backlight that emits near-infrared light or near-infrared light. By using a sensing light source that emits ambient light, it is also possible to image finger veins, palmar veins, etc. ru.

[0307] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is Noh.

[0308] (Embodiment 11) While various examples are shown in other embodiments, this embodiment does not include other embodiments. Changes, modifications, additions, deletions, replacements, etc., to any part or all of the content shown in the form. An example of application and implementation is shown. Alternatively, in this embodiment, other embodiments may be used. The content shown here is different from the example shown. Alternatively, in this embodiment, other embodiments are shown. Detailed examples of the content shown in the above are provided. Alternatively, in this embodiment, other embodiments are shown. An example of a higher-level concept of the content shown in [this section] is shown. Alternatively, in this embodiment, the form of this implementation is shown. An example of the definition of the state and the content shown in other embodiments is given below.

[0309] Therefore, one embodiment of the present invention is not limited to the content described in this embodiment. It is not determined.

[0310] For example, a display element, a display device having a display element, a light-emitting element, and a light-emitting element The light-emitting device, which is a device that possesses various forms, or has various elements. Yes, it is possible. An example of a display element, display device, light-emitting element, or light-emitting device is EL (electroluminescent element). Luminescence elements (EL elements including organic and inorganic materials, organic EL elements, inorganic EL elements) ), LEDs (white LEDs, red LEDs, green LEDs, blue LEDs, etc.), transistors ( Transistors that emit light in response to electric current, electron-emitting elements, liquid crystal elements, electronic ink, electrophoresis Elements, grating light bulbs (GLV), digital micromirror devices (DM) D) Piezoelectric ceramic displays, carbon nanotubes, etc., due to electromagnetic effects Some display media have properties such as contrast, brightness, reflectance, and transmittance that change over time. An example of a display device using EL elements is an EL display. An example of a display device using this is a field emission display (FED) or SED flat-panel display (SED: Surface-conduction electroluminescent) Examples include LCD-emitter displays. One example of placement is a liquid crystal display (transmissive liquid crystal display, semi-transmissive liquid crystal display). (Reflective liquid crystal displays, direct-view liquid crystal displays, projection liquid crystal displays) Examples include electronic paper. These are some examples.

[0311] An example of an EL element is an anode, a cathode, and an EL layer sandwiched between the anode and cathode. Some elements possess this technology. One example of an EL layer is the use of light emission (fluorescence) from singlet excitons. This method utilizes the emission (phosphorescence) from triplet excitons, and the emission from singlet excitons. This includes methods that utilize fluorescence and methods that utilize light emission (phosphorescence) from triplet excitons. Things formed by organic matter, things formed by inorganic matter, things formed by organic matter Includes materials formed from inorganic substances, includes polymer materials, low-molecular-weight materials. This includes materials containing the same components as the material itself, or materials containing both high-molecular-weight and low-molecular-weight components. However, this is not the only option; various materials can be used as EL elements.

[0312] One example of an electron-emitting device is one that concentrates a high electric field at the cathode to extract electrons. Specifically, examples of electron-emitting devices include spint-type and carbon nanotube (CN) electron-emitting devices. T) Type, Metal-Insulator-Metal Laminate Metal-Insulator (MIS) type, a layered metal-insulator-semiconductor structure. - Semiconductor type, MOS type, silicon type, thin-film diode type, diamond Thin film types such as Mondo type, metal-insulator-semiconductor-metal type, HEED type, EL type, porous type Examples include the reconnaissance type or the surface conduction (SCE) type. However, it is not limited to these, and electron emission Various materials can be used as components.

[0313] One example of electronic paper is one that displays information using molecules (optical anisotropy, dye molecule orientation). (etc.), things that are displayed by particles (electrophoresis, particle movement, particle rotation, phase change, etc.), These are phenomena that occur due to the movement of one end of a film, or due to the color change / phase change of molecules. These are things that are displayed by the light absorption of molecules, or by the self-luminescence caused by the bonding of electrons and holes. It can use the display elements, etc. Specifically, the driving method and materials of the electronic paper. , and as elements, microcapsule electrophoresis, horizontal-movement electrophoresis, vertical-movement electrophoresis Gas electrophoresis, spherical twist balls, magnetic twist balls, cylindrical twist ball method, electrostatic toner - Electronic powder fluid (registered trademark), magnetic electrophoresis type, magnetic thermal type, electrowetting, light Scattering (transparency change to opacity), cholesteric liquid crystal / photoconductive layer, cholesteric liquid crystal, bistable Nematic liquid crystals, ferroelectric liquid crystals, dichroic dyes / liquid crystal dispersions, movable films, leuco dyes Decolorization, photochromic, electrochromic, electrodeposition, flexible Examples include organic EL displays. However, this is not limited to these, and includes electronic paper and its display methods. Various methods can be used. Here, microcapsule electrophoresis can be used. This can solve particle aggregation and precipitation. Electronic powder fluid (registered trademark) is high-speed It offers advantages such as responsiveness, high reflectivity, wide viewing angle, low power consumption, and memory capabilities.

[0314] Note that display devices that require a light source, such as liquid crystal displays (transmissive liquid crystal displays) I. Semi-transmissive liquid crystal display, reflective liquid crystal display, direct-view liquid crystal display, projection Display devices using (refractory liquid crystal displays), grating light bulbs (GLVs), and An example of a light source for a display device using a digital micromirror device (DMD) is: Electroluminescence, cold cathode tubes, hot cathode tubes, LEDs, laser light sources, mercury lamps, etc. You can use various light sources. However, this is not limited to these, and you can use various other light sources. It is possible.

[0315] For example, transistors with various structures can be used. There are no restrictions on the type of transistor used. One example of a transistor is amorphous silicon Cone, polycrystalline silicon, microcrystalline (microcrystal, nanocrystal, semi-amorphous) Thin-film transistors (T) have a non-single-crystal semiconductor film, such as silicon (also called S). You can use FTs, etc. Using TFTs offers various advantages. For example Furthermore, because it can be manufactured at a lower temperature than single-crystal silicon, it reduces manufacturing costs, or manufacturing The equipment can be made larger. Because the manufacturing equipment can be made larger, it is possible to manufacture on larger substrates. Therefore, since a large number of display devices can be manufactured simultaneously, they can be produced at a low cost. Alternatively, because the manufacturing temperature is low, substrates with poor heat resistance can be used. Therefore, light transmission Transistors can be manufactured on a substrate having light-transmitting properties. A transistor can be used to control the transmission of light through the display element. Alternatively, a transistor Because the film thickness is small, a portion of the film that forms the transistor can transmit light. Therefore, the aperture ratio can be improved.

[0316] Furthermore, when manufacturing polycrystalline silicon, by using a catalyst (such as nickel), Further improvement in crystallinity makes it possible to manufacture transistors with superior electrical properties. As a result, gate driver circuit (scan line drive circuit), source driver circuit (signal line drive circuit) ), and signal processing circuits (signal generation circuits, gamma correction circuits, DA conversion circuits, etc.) are mounted on the substrate. It can be formed as a single unit.

[0317] Furthermore, when manufacturing microcrystalline silicon, by using a catalyst (such as nickel), This further improves crystallinity, making it possible to manufacture transistors with superior electrical properties. In this case, crystallinity can be improved simply by applying heat treatment without laser irradiation. This is also possible. As a result, part of the source driver circuit (such as analog switches) and the game The driver circuit (scan line drive circuit) can be integrally formed on the substrate. If laser irradiation is not performed, the unevenness of silicon crystallinity can be suppressed. Therefore, it is possible to display images with improved image quality. However, catalysts (such as nickel) It is possible to manufacture polycrystalline silicon or microcrystalline silicon without using ( ).

[0318] Furthermore, improving the crystallinity of silicon to make it polycrystalline or microcrystalline is possible for the entire panel. It is preferable to perform this with the body, but it is not limited to that. The crystallinity of the ricon may be improved. Selectively improving crystallinity is done by using laser light. This is possible by selectively irradiating the area. For example, the peripheral circuit area, which is an area other than the pixel. Only in the region, only in the region of gate driver circuit and source driver circuit, or sourced Even if you irradiate only a part of the driver circuit (for example, an analog switch), Good. As a result, silicon crystals are used only in regions where the circuit needs to operate at high speed. This can improve the quality. The pixel region does not require high-speed operation, so crystalline Even if the performance is not improved, the pixel circuit can be operated without any problems. Therefore, since less area is needed to improve crystallinity, the manufacturing process can also be shortened. Therefore, throughput can be improved and manufacturing costs can be reduced. Or, if necessary Since the number of manufacturing devices required can be reduced, manufacturing costs can be lowered. .

[0319] Examples of transistors include ZnO, a-InGaZnO, SiGe, and GaA Compound semiconductors such as s, IZO, ITO, SnO, TiO, and AlZnSnO(AZTO) or transistors having oxide semiconductors, or compound semiconductors or oxide semiconductors thereof Thin-film transistors and the like can be used. This allows for lower manufacturing temperatures. Therefore, for example, it becomes possible to manufacture transistors at room temperature. Transistors are directly formed on substrates with low durability, such as plastic substrates or film substrates. This can be achieved. Furthermore, these compound semiconductors or oxide semiconductors can be used in transistors. It can be used not only for the channel portion, but also for other purposes. For example, this These compound semiconductors or oxide semiconductors are used as wiring, resistive elements, pixel electrodes, or light-transmitting electrodes. They can be used as electrodes, etc. They can be deposited or formed simultaneously with the transistor. This makes it possible to reduce costs.

[0320] As an example of a transistor, a transistor formed using an inkjet method or printing method is... Rangistas and the like can be used. These allow for manufacturing at room temperature, manufacturing at low vacuum levels, and It can be manufactured on a large substrate. Therefore, it can be manufactured without using a mask (reticle). This makes it possible to easily change the layout of the transistors. Alternatively, since it is possible to manufacture without using resist, material costs are reduced and the number of processes is eliminated. It can be reduced. Or, it is possible to apply the film only to the necessary parts, so after forming a film over the entire surface... This method is less wasteful and lower-cost than etching.

[0321] As an example of a transistor, there are transistors that have organic semiconductors or carbon nanotubes. Transistors and the like can be used. With these, transients can be applied to a bendable substrate. It is possible to form a transistor. A semiconductor device using such a transistor is shock-resistant. It can be done.

[0322] Furthermore, transistors with various other structures can also be used. For example, transistors include MOS type transistors, junction type transistors, and bipod type transistors. A transistor such as a MOS-type transistor can be used. By using this, the size of the transistor can be reduced. Therefore, multiple transistors It can be equipped with a transistor. Bipolar transistors are used as transistors. This allows for the flow of a large current. Therefore, it is possible to operate the circuit at high speed. Yes, it is possible. Furthermore, MOS transistors and bipolar transistors can be mixed on a single substrate. It may be formed in this way. This will enable low power consumption, miniaturization, and high-speed operation. can.

[0323] For example, one example of a transistor is a multi-gate structure with two or more gate electrodes. A transistor can be used. In a multi-gate structure, the channel regions are connected in series. Because they are connected in series, the structure consists of multiple transistors connected in series. Therefore, multi-gauge The T structure reduces off-current and improves the transistor's breakdown voltage (improving reliability). Yes, it is possible. Alternatively, a multi-gate structure can be used when operating in the saturation region, with drain and source. Even if the voltage between them changes, the current between the drain and source does not change much, and the slope is A flat slope can be obtained for the voltage-current characteristic. By utilizing flow characteristics, it is possible to realize an ideal current source circuit or an active load with very high resistance. This makes it possible to realize differential circuits or current mirror circuits with good characteristics. It is possible.

[0324] As an example of a transistor, there is a configuration in which gate electrodes are arranged above and below the channel. A transistor of this type can be applied. The gate electrodes are arranged above and below the channel. By doing so, the circuit configuration becomes one in which multiple transistors are connected in parallel. This increases the channel area, allowing for an increase in the current value. Alternatively, the channel By arranging gate electrodes above and below, a depletion layer is more likely to form. Therefore, it is possible to improve the S value.

[0325] For example, in a transistor, the gate electrode is located above the channel region. Structure, structure in which the gate electrode is located below the channel region, positive staggered structure, inverse staggered structure Structure, a structure in which the channel region is divided into multiple regions, a structure in which the channel regions are connected in parallel, or Transistors with a structure that connects the channel regions in series can be used.

[0326] As an example of a transistor, the channel region (or part thereof) may contain source electrodes or A transistor with a structure in which the drain electrodes overlap can be used. Channel region ( By creating a structure in which the source electrode and drain electrode overlap (or part thereof), the channel This prevents unstable operation caused by the accumulation of charge in a portion of the region.

[0327] As an example of a transistor, a structure with an LDD region can be applied. By creating a range, the off-current can be reduced, or the transistor's breakdown voltage can be improved (reliability can be improved). This can be achieved. Alternatively, by providing an LDD region, when operating in the saturation region... Even if the voltage between the drain and source changes, the drain current does not change much, and the slope is A flat voltage-current characteristic can be obtained.

[0328] For example, transistors can be formed using various substrates. The types of substrates are: It is not limited to a specific type. One example of such a substrate is a semiconductor substrate (for example, a single Crystal substrates or silicon substrates), SOI substrates, glass substrates, quartz substrates, plastic substrates, Metal substrates, stainless steel substrates, substrates with stainless steel foil, tang Stainless steel substrate, substrate with tungsten foil, flexible substrate, laminated film, fiber Examples include paper containing fibrous material, or substrate films. An example of a glass substrate is Variu Examples include borosilicate glass, aluminobosilicate glass, or soda-lime glass. Examples of flexible substrates include polyethylene terephthalate (PET) and polyethylene naphthium. Plastics such as talate (PEN) and polyethersulfone (PES), Examples include flexible synthetic resins such as acrylic. An example of a laminated film is... Polypropylene, polyester, vinyl, polyvinyl fluoride, or vinyl chloride are among the materials used. Examples of base films include polyester, polyamide, polyimide, and inorganic vapor-deposited film. Examples include film or paper. In particular, semiconductor substrates (e.g., single crystal substrates) or SOI groups By manufacturing transistors using boards or similar materials, characteristics, size, or shape can be improved. It is possible to manufacture transistors with less rattle, high current capacity, and small size. When a circuit is constructed using such transistors, the power consumption of the circuit can be reduced, or the circuit can be... High integration can be achieved.

[0329] Furthermore, a transistor is formed using one substrate, and then the transistor is transferred to another substrate. The transistor may be placed on one of the substrates on which the transistor is transposed. Examples include, in addition to the substrates on which the transistors described above can be formed, paper substrates, cellophane Fan substrates, stone substrates, wood substrates, fabric substrates (natural fibers (silk, cotton, linen), synthetic fibers (nylon)) , polyurethane, polyester) or regenerated fibers (acetate, cupro, rayon, These include recycled polyester, leather substrates, or rubber substrates. By using this method, it is possible to form transistors with good characteristics and transistors with low power consumption. This allows for the manufacture of durable devices, improved heat resistance, weight reduction, and thinner designs.

[0330] Furthermore, all the circuits necessary to realize the specified function are placed on the same circuit board (for example, glass It can be formed on substrates such as stainless steel substrates, plastic substrates, single crystal substrates, or SOI substrates. Yes. In this way, costs are reduced by reducing the number of parts, or the number of connection points with circuit components is reduced. This can improve reliability.

[0331] Furthermore, it is not necessary to form all the circuits required to achieve a specific function on the same circuit board. It is possible. In other words, some of the circuits necessary to achieve a certain function can be formed on a certain circuit board. Another part of the circuitry necessary to achieve the predetermined function is formed on a separate substrate. It is possible that some of the circuits necessary to achieve a certain function are gas Another part of the circuitry, which is formed on the lath substrate and necessary to realize a predetermined function, is a single crystal base. It can be formed on a plate (or SOI substrate). And it can realize a predetermined function. A single-crystal substrate (also called an IC chip) on which another part of the necessary circuitry is formed is called COG (Chip On Glass) connects to a glass substrate, and its I It is possible to place a C chip. Alternatively, the IC chip can be placed in a TAB (Tape Au tomated Bonding), COF(Chip On Film), SMT(S Surface Mount Technology, or using printed circuit boards, etc. It is possible to connect to a lath substrate. In this way, a part of the circuit is formed on the same substrate as the pixel section. This reduces costs by decreasing the number of components, or by reducing the connection points with circuit components. Reliability can be improved by reducing the number of components. In particular, in circuits where the drive voltage is high, Alternatively, circuits with high drive frequencies often consume a lot of power. Therefore, by forming such a circuit on a substrate separate from the pixel section (for example, a single-crystal substrate), an IC is created. The chip is constructed. By using this IC chip, it is possible to prevent an increase in power consumption. can.

[0332] For example, one pixel is defined as one element whose brightness can be controlled. A single color element represents a single color component, and brightness is expressed using that single color component. Therefore, In the case of a color display device having R (red), G (green), and B (blue) color elements, the image The smallest unit is defined as consisting of three pixels: an R pixel, a G pixel, and a B pixel. Furthermore, the color elements are not limited to three colors; more than three colors may be used, and colors other than RGB may also be used. You can do that too. For example, you can add white and make it RGBW (W is white). Or, R For example, yellow, cyan, magenta, emerald green, vermilion, etc., one or more colors It is possible to add the above. Alternatively, a color similar to at least one of the RGB colors, R It is possible to add to GB. For example, it could be R, G, B1, B2. B1 and B Both are blue, but their wavelengths are slightly different. Similarly, R1, R2, G, B It is also possible to do so. By using such color elements, a display closer to reality can be achieved. It is possible to do so. By using such color elements, power consumption can be reduced. Cut.

[0333] Furthermore, when controlling the brightness of a single color element using multiple regions, the region It is possible to treat one unit as one pixel. For example, when performing area gradation or sub-pixels ( If a pixel has a color element, there are multiple regions for controlling the brightness of that color element. Sometimes, the entire area can be used to represent gradation. In that case, one pixel represents one of the areas that control brightness. This is possible. In other words, one color element will be composed of multiple pixels. However, even if there are multiple areas within a single color element that control brightness, they can be grouped together. Alternatively, one color element may be represented as one pixel. In that case, one color element is composed of one pixel. This will be done. Furthermore, for a single color element, brightness will be controlled using multiple regions. In some cases, the size of the area contributing to the display may differ depending on the pixel. In the multiple brightness control regions for each color element, the signal supplied to each is slightly smaller. You can also widen the viewing angle by making it different to one color element. Furthermore, it is possible that the potential of the pixel electrodes in each of the multiple regions is different. Therefore, the voltage applied to the liquid crystal molecules differs for each pixel electrode. It can be made more widespread.

[0334] Note that when explicitly stating "one pixel (three colors)," one pixel refers to the three pixels of R, G, and B. Let's assume this is the case. When explicitly specifying one pixel (one color), one color element Therefore, if there are multiple regions, we will consider them collectively as a single pixel.

[0335] For example, pixels may be arranged (arranged) in a matrix. Here, pixels Arranged in a matrix means that pixels are arranged in a straight line in the vertical or horizontal direction. This includes cases where they are arranged in a line or on a jagged line. Therefore, for example, if you want to display full color using three color elements (for example, RGB), When arranged in stripes, when the three color elements are arranged in a delta pattern, This includes cases where the arrangement is Bayer-type and mosaic-type. The size of the display area may differ for each element's dot. This results in low power consumption. This allows for the modification of the display element or the extension of its lifespan.

[0336] For example, an active matrix system in which the pixels have active elements, or an active element in the pixels A passive matrix method that does not have [specific characteristic] can be used.

[0337] In the active matrix system, the active elements (active elements, nonlinear elements) are, In addition to transistors, various active elements (active elements, nonlinear elements) can be used. This is possible. For example, MIM (Metal Insulator Metal), or T It is also possible to use elements such as FD (Thin Film Diode). Because it involves fewer manufacturing steps, it is possible to reduce manufacturing costs or improve yield. Alternatively, these elements can improve the aperture ratio due to their small size. This allows for lower power consumption and higher brightness.

[0338] Other than the active matrix method, there are active elements (active elements, nonlinear elements) It is also possible to use a passive matrix type that does not use active elements. Because it does not use sub-elements or nonlinear elements, the manufacturing process is simpler, resulting in reduced manufacturing costs or higher yield. This can improve the performance. Alternatively, active elements (active elements, nonlinear elements) can be used. Because it does not exist, the aperture ratio can be improved, leading to lower power consumption or higher brightness. It is possible.

[0339] For example, a transistor is a component consisting of at least three elements: a gate, a drain, and a source. It is an element having a terminal. And, drain (drain terminal, drain region or drain) A channel region exists between the source (source terminal, source region, or source electrode) and the source (source terminal, source region, or source electrode). It is capable of conducting current through the drain, channel region, and source. Here, the source and drain vary depending on the transistor's structure or operating conditions. Therefore, it is difficult to determine which is the source and which is the drain. The part that functions as a source and the part that functions as a drain are called the source or drain. There are cases where this is not possible. In such cases, for example, one of the source and drain may be connected to the first terminal, the second terminal, and so on. One electrode is referred to as the first electrode, or the first region, and the other side of the source and drain is referred to as the second terminal, second electrode, or This is sometimes referred to as the second area.

[0340] Furthermore, a transistor has at least three terminals, including the base, emitter, and collector. It may also be an element having one of the emitter and collector. Similarly in this case, as an example, The other side is referred to as the first terminal, first electrode, or first region, and the other side of the emitter and collector is referred to as the first It may be referred to as a 2-terminal, second electrode, or second region. When polar transistors are used, the term "gate" can be replaced with "base." It is Noh.

[0341] For example, a gate refers to a gate electrode and gate wiring (gate line, gate signal line, scan line, running line). This refers to the whole or a part of it, including the gate electrode and (also called the signal line, etc.). This consists of a semiconductor forming a channel region and a portion that overlaps via a gate insulating film. It refers to a conductive film of a certain size. However, a portion of the gate electrode is LDD (Lightly Do The ped Drain region, or source region (or drain region), and the gate insulating film It is possible for them to overlap via a gate. Gate wiring refers to the gate of each transistor. Wiring for connecting electrode terminals, wiring for connecting gate electrodes of each pixel This refers to a wire, or a wire used to connect a gate electrode to another wire.

[0342] However, there are parts that function as both gate electrodes and gate wiring (areas) There are also areas (regions, conductive films, wiring, etc.). You can call it a gate electrode, or you can call it gate wiring. In other words, gate electrode and gate wiring There are also areas where lines and other elements cannot be clearly distinguished. For example, extended and arranged geographical features. If a portion of the wiring and the channel area overlap, that portion (area, conductive film) (The wiring, etc.) functions as gate wiring, but also functions as gate electrodes. Therefore, such parts (regions, conductive films, wiring, etc.) can be called gate electrodes. That's fine, you could even call it gate wiring.

[0343] Furthermore, it is formed from the same material as the gate electrode and forms the same island as the gate electrode. The connected parts (regions, conductive films, wiring, etc.) can also be called gate electrodes. Furthermore, it is formed from the same material as the gate wiring and forms the same island as the gate wiring. The connected parts (regions, conductive films, wiring, etc.) can also be called gate wiring. These parts (regions, conductive films, wiring, etc.) overlap with the channel region in a strict sense. It may not have this function, or it may not have the ability to connect to another gate electrode. Furthermore, due to manufacturing specifications and other factors, the gate electrode or gate wiring is formed from the same material. The portion (region) that is connected to the same island as the gate electrode or gate wiring. There are conductive films, wiring, etc. Therefore, such parts (regions, conductive films, wiring, etc.) are also affected. It can also be called a gate electrode or gate wiring.

[0344] For example, in a multi-gate transistor, one gate electrode and another gate Electrodes are often connected by a conductive film made of the same material as the gate electrode. These parts (regions, conductive films, wiring, etc.) connect one gate electrode to another. Since it is a part (region, conductive film, wiring, etc.) for this purpose, it can also be called gate wiring, but A transistor with a gate structure can also be considered as a single transistor, so the gate electric current It can also be called a pole. In other words, it is formed from the same material as the gate electrode or gate wiring, and is a gate The portion (region, conductor) that is connected to the same island as the electrode or gate wiring. The electrode film, wiring, etc. can also be called the gate electrode or gate wiring. As another example, gate electrode A conductive film in the portion connecting the electrode and the gate wiring, and the gate electrode or gate wiring A conductive film formed from a different material can also be called a gate electrode, or gate wiring. But that's fine.

[0345] Note that a gate terminal refers to the gate electrode portion (region, conductive film, wiring, etc.), or the gate electrode. Regarding the parts (regions, conductive films, wiring, etc.) that are electrically connected to the poles, a portion of them That is what they say.

[0346] Furthermore, a certain wiring may be referred to as gate wiring, gate line, gate signal line, scan line, or scan signal line. In some cases, the gate of the transistor may not be connected to that wiring. The gate wiring, gate line, gate signal line, scan line, or scan signal line is the gate wiring of the transistor. Wiring formed in the same layer as the gate, wiring formed from the same material as the transistor gate, Alternatively, it may refer to wiring that is deposited simultaneously with the gate of a transistor. Examples include wiring for maintaining capacitance, power lines, and reference potential supply wiring.

[0347] Note that the source refers to the source area, source electrodes, and source wiring (source wires, source signal lines, This refers to the entire system including data lines (also called data signal lines, etc.), or a part thereof. The source region refers to P-type impurities (such as boron and gallium) or N-type impurities (such as phosphorus and arsenic). This refers to a semiconductor region that contains a large amount of (etc.). Therefore, it contains a small amount of P-type impurities and N-type impurities. The area containing matter, also known as the LDD (Lightly Doped Drain) area. The source region is often not included in the source region. The source electrode is made of a different material than the source region. This refers to the conductive layer that is formed and positioned to be electrically connected to the source region. However, the source electrode is sometimes also referred to as the source electrode, including the source region. This refers to the wiring for connecting the source electrodes of each transistor, and the source electrodes of each pixel. This refers to wiring used to connect two points, or wiring used to connect a source electrode to another wire. say.

[0348] However, there are parts that function as both source electrodes and source wiring. There are also regions, conductive films, wiring, etc. Such parts (regions, conductive films, wiring, etc.) You can call it a source electrode, or you can call it a source wire. In other words, source electrode and source There are also areas where wiring cannot be clearly distinguished. For example, areas where wiring is extended and arranged. If a portion of the source wiring and the source area overlap, that portion (area, conductive) The film, wiring, etc., functions as a source wiring, but also functions as a source electrode. Therefore, such parts (regions, conductive films, wiring, etc.) are called source electrodes. That's fine, or you could call it source wiring.

[0349] Furthermore, it is formed from the same material as the source electrode and forms the same island as the source electrode. Connected parts (regions, conductive films, wiring, etc.), connecting source electrodes. The part (region, conductive film, wiring, etc.), or the part that overlaps with the source region (region) The region, conductive film, wiring, etc. can also be called the source electrode. Similarly, the same material as the source wiring. The region formed by and connected to the same island as the source wiring is also It could also be called wiring. These parts (regions, conductive films, wiring, etc.) are, in a strict sense, It may not have the functionality to connect to another source electrode. However, this may be due to the specifications at the time of manufacture. In which relationship is it formed from the same material as the source electrode or source wiring, and the source electrode or source There are parts (regions, conductive films, wiring, etc.) that are connected to the wiring. The components (regions, conductive films, wiring, etc.) can also be called source electrodes or source wiring.

[0350] For example, the conductive film in the part connecting the source electrode and the source wiring, A conductive film formed from a material different from the source electrode or source wiring can also be called a source electrode. That's fine, you could even call it source wiring.

[0351] Note that the source terminal refers to the source area, source electrode, or the terminal electrically connected to the source electrode. It refers to a part of a component (region, conductive film, wiring, etc.).

[0352] Note that a certain wire may be called a source wire, source line, source signal line, data line, or data signal line. When referring to it as "do," it also means that the source (drain) of the transistor is not connected to that wiring. Yes. In this case, source wiring, source line, source signal line, data line, data signal line are Wiring formed on the same layer as the source (drain) of a transistor, the source (drain) of a transistor The wiring or transistor source (drain) formed from the same material as the rain, and simultaneously It can sometimes refer to wires with a film coating. Examples include wiring for retaining capacitance, power lines, and reference lines. There are wiring connections for supplying electric potential, etc.

[0353] The drain is the same as the source.

[0354] For example, semiconductor devices are semiconductor elements (transistors, diodes, thyristors, etc.). This refers to a device that has a circuit that includes [a specific component]. However, it may function by utilizing the properties of semiconductors. The term "semiconductor device" may refer to any device in general, or to any device containing semiconductor materials.

[0355] A display device is a device that has a display element. It may contain multiple pixels, including children. Note that the display device drives the multiple pixels. It may also include an edge drive circuit. Note that a peripheral drive circuit that drives multiple pixels may include multiple The pixels may be formed on the same substrate. Note that the display device may be formed using wire bonding or bump bonding. Peripheral drive circuits placed on the substrate, also known as chip-on-glass (COG), are constructed using methods such as those described above. It is acceptable to include IC chips connected via a cable, or IC chips connected via a TAB, etc. The display device consists of IC chips, resistors, capacitives, inductors, transistors, etc. It may include a flexible printed circuit (FPC) with a component attached. The display device is connected via a flexible printed circuit (FPC), etc., and the IC chip Printed circuit boards with components such as resistors, capacitors, inductors, and transistors attached. It may also include a wire substrate (PWB). Furthermore, the display device may include a polarizing plate or a phase difference plate, etc. It may also include an optical sheet. The display device includes a lighting device, a housing, an audio input / output device, It may include optical sensors, etc.

[0356] The lighting device consists of a backlight unit, a light guide plate, a prism sheet, a diffusion sheet, and a backlight. It has a light sheet, a light source (LED, cold cathode tube, etc.), a cooling device (water-cooled, air-cooled), etc. You can.

[0357] Furthermore, a light-emitting device refers to a device that has light-emitting elements, etc. If it has an optical element, a light-emitting device is one specific example of a display device.

[0358] A reflective device is a device that has light-reflecting elements, light-diffracting elements, light-reflecting electrodes, etc. This refers to the idea that...

[0359] A liquid crystal display device is a display device that has liquid crystal elements. Liquid crystal display devices include: There are various types, including direct viewing, projection, transmissive, reflective, and semi-transmissive.

[0360] Note that a drive device refers to a device that has semiconductor elements, electrical circuits, or electronic circuits. For example, a transistor (selection transistor) that controls the input of a signal from the source signal line into the pixel. A transistor (sometimes called a switching transistor) applies voltage or current to the pixel electrode. Transistors that supply power, transistors that supply voltage or current to light-emitting elements, etc. This is an example of a moving device. Furthermore, it is a circuit that supplies signals to the gate signal line (gate driver, gate (Sometimes called a source line drive circuit), a circuit that supplies a signal to the source signal line (source drive circuit) Drivers (sometimes called source line drive circuits, etc.) are examples of drive devices.

[0361] Furthermore, display devices, semiconductor devices, lighting devices, cooling devices, light-emitting devices, reflectors, drive devices, etc. These may overlap with each other. For example, a display device may have semiconductor equipment and an emitter. It may have an optical device. Alternatively, the semiconductor device may have a display device and a drive device. This can sometimes happen.

[0362] For example, if you explicitly state that X and Y are connected, then X and Y are electrically connected. When connected, when X and Y are functionally connected, and when X and Y are directly connected This includes cases where it is done. Here, X and Y are the object (e.g., device, element, (Circuits, wiring, electrodes, terminals, conductive films, layers, etc.) are assumed to be such. Therefore, a predetermined connection relationship This includes, for example, connections shown in diagrams or text, but is not limited to those shown in diagrams or text. This includes relationships other than direct ties.

[0363] One example of a case where X and Y are electrically connected is when the electrical connection between X and Y is possible. Elements that perform this function (for example, switches, transistors, capacitive elements, inductors, resistive elements, etc.) It is possible for one or more ions (such as iods) to be connected between X and Y.

[0364] One example of a functional connection between X and Y is the functional connection between X and Y. Circuits that can perform this function (for example, logic circuits (inverters, NAND gates, NOR gates, etc.), signals) Conversion circuits (DA conversion circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits ( Power supply circuits (boost circuits, buck circuits, etc.), level shifter circuits that change the potential level of a signal, etc. ), voltage source, current source, switching circuit, amplification circuit (can increase signal amplitude or current amount, etc.) (Signal generators, operational amplifiers, differential amplifiers, source follower circuits, buffer circuits, etc.), signal generation It is possible to connect one or more (such as a circuit, memory circuit, control circuit, etc.) between X and Y. Yes, it is. For example, even if another circuit is placed between X and Y, the signal output from A If the code is transmitted to B, then X and Y are assumed to be functionally connected.

[0365] Furthermore, if it is explicitly stated that X and Y are electrically connected, then X and Y are electrically connected. When connected electrically (i.e., connected with another element or circuit in between X and Y) (if such a connection exists) and (if X and Y are functionally connected) (When functionally connected with another circuit in between) and when X and Y are directly connected (That is, the case where X and Y are connected without another element or circuit in between) It shall be assumed that they are electrically connected. In other words, when explicitly stating that they are electrically connected, simply, This is equivalent to the case where it is explicitly stated that it is "continued."

[0366] For example, explicitly stating that Y is formed on X, or that Y is formed on X. When describing it directly, it is not limited to the case that Y is formed in direct contact with X. This includes cases where objects are not in contact, i.e., where another object is interposed between X and Y. Here, X and Y are the object (e.g., device, element, circuit, wiring, electrode, terminal, conductive film, Let's assume it is a layer, etc.

[0367] Therefore, for example, if layer Y is formed on top of layer X (or on layer X), explicitly If described, this applies to cases where layer Y is formed in direct contact with layer X, and where layer X is formed on top of layer X. Another layer (for example, layer Z) is formed in direct contact with it, and layer Y is formed in direct contact with it. This includes cases where it has been done. Note that another layer (for example, layer Z) may be a single layer. That's fine, and a multi-layered (laminated) structure is also acceptable.

[0368] Furthermore, the same applies when it is explicitly stated that Y is formed above X. It is not limited to Y being directly in contact with X, but rather there may be another object between X and Y. This includes cases where layers are interposed. Therefore, for example, layer Y is formed above layer X. In this case, there are two possibilities: when layer Y is formed in direct contact with layer X, and when layer Y is formed in direct contact with layer X Then another layer (for example, layer Z) is formed, and layer Y is formed directly in contact with it. This includes cases where this is the case. Note that another layer (for example, layer Z) may be a single layer. Multiple layers (laminated) are also acceptable.

[0369] Furthermore, Y is formed on top of X, Y is formed on top of X, or Y is above X When explicitly stating that something is formed, this includes cases where Y is formed diagonally above X. Let's assume that.

[0370] The same applies when Y is below X, or when Y is below X.

[0371] For example, if something is explicitly stated as singular, it is preferable that it be singular. i. However, this is not limited to this, and there can be multiple. Similarly, explicitly having multiple For items listed as such, it is preferable to have multiple items. However, this is not limited to these. It is not possible for it to be singular.

[0372] For example, terms like "first," "second," and "third" refer to various elements, components, areas, layers, and regions. It is used to distinguish it from the others. Therefore, terms such as 1st, 2nd, 3rd, etc. are elements This does not limit the number of components, regions, layers, areas, etc. Furthermore, for example, "the first" It is possible to replace this with "the second" or "the third," etc.

[0373] For example, "upwards," "upwards," "downwards," "sideways," "to the right," "to the left" Spaces such as "diagonally", "back", "front", "inside", "outside", or "inside". The phrases indicating the arrangement simply illustrate the relationship between one element or feature and another element or feature using diagrams. Often used simply to show. However, it is not limited to this, and also applies to the spatial arrangement of these elements. The phrase indicating X can include directions other than those depicted in the diagram. For example, X When Y is explicitly indicated above, it is not limited to Y being above X. The chair can be flipped or rotated 180°, so Y must be below X. This is possible. Thus, the phrase "upwards" can mean not only the direction "upwards" but also "downwards". It is possible to include directions. However, it is not limited to this, and the devices in the figures can rotate in various directions so the phrase "upward" can refer to the directions of "upward" and "downward" In addition, other directions such as "sideways", "right", "left", "diagonally", "back", "front", "inside", "outside", or "into" can also be included. That is, it can be appropriately interpreted according to the situation

[0374] In addition, in the figures or text described in a certain embodiment, it is possible to extract a part of it to constitute an aspect of the invention. Therefore, when a figure or text describing a certain part is provided, the content extracted from that part of the figure or text is also disclosed as an aspect of the invention and can constitute an aspect of the invention shall be considered as such. Thus, for example, active elements (such as transistors, diodes, etc.), wiring, passive elements (such as capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components , substrates, modules, devices, solids, liquids, gases, operating methods, manufacturing methods, etc., whether singular or plural[[ID=2​​​​​​​​​​​​​​​​ From the cross-sectional view that is formed, it is possible to extract M (M is an integer, M < N) layers and constitute one aspect of the invention. As another example, from a flowchart constituted of N (N is an integer) elements, it is possible to extract M (M is an integer, M < N) elements and constitute one aspect of the invention. From the flowchart constituted of N (N is an integer) elements, it is possible to extract M (M is an integer, M < N) elements and constitute one aspect of the invention. It is possible.

[0375] In addition, in the figures or text described in a certain embodiment, when at least one specific example is described, it is easily understood by those skilled in the art to derive the upper concept of that specific example. Therefore, in the figures or text described in a certain embodiment, when at least one specific example is described, the upper concept of that specific example is also disclosed as one aspect of the invention and can constitute one aspect of the invention. In addition, at least the content described in the figure (even a part in the figure) is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, for a certain content, if it is described in the figure, even if it is not described using text, that content is disclosed as one aspect of the invention and can constitute one aspect of the invention. Similarly, for a figure obtained by extracting a part of the figure, it is also disclosed as one aspect of the invention and can constitute one aspect of the invention. It is possible. <00029s35>

[0377]

Explanation of Reference Numerals

Claims

[Claim 1] Two adjacent first electrodes, The second electrode and The third electrode and The device comprises a charged particle disposed between the two first electrodes and the second electrode, The third electrode is provided between the two first electrodes and the second electrode, and is electrically connected to one of the two first electrodes. The third electrode overlaps with at least a portion of one of the two first electrodes via an insulating film. The electric field-driven display device is characterized in that the third electrode overlaps with at least a portion of the other of the two first electrodes via the insulating film.

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