Wafer mounting equipment, semiconductor manufacturing equipment, and semiconductor device manufacturing method

Abstract

The objective is to provide a wafer loading device that can suppress the decrease in productivity of an epitaxial growth device by improving the rotational efficiency of the wafer loading device, thereby reducing the flow rate of the rotational gas. [Solution] The wafer mounting apparatus according to the present disclosure is a wafer mounting apparatus for mounting a semiconductor wafer, comprising an upper surface located on the lower side of the semiconductor wafer to be mounted, and a lower surface facing the upper surface, the lower surface having a protruding portion that protrudes from the lower surface.

Description

Technical Field

[0001] The present disclosure relates to a wafer mounting apparatus, a semiconductor manufacturing apparatus, and a method for manufacturing a semiconductor device.

Background Art

[0002] As an apparatus for forming an epitaxial growth layer on the surface of a semiconductor wafer, an epitaxial growth apparatus is used. The epitaxial growth apparatus includes a wafer mounting apparatus for mounting a semiconductor wafer. A conventional epitaxial growth apparatus equipped with a wafer mounting apparatus is disclosed in Patent Document 1.

[0003] In Patent Document 1, a semiconductor wafer is mounted on a wafer mounting apparatus included in an epitaxial growth apparatus, and an epitaxial growth layer is formed on the surface of the semiconductor wafer by supplying a raw material gas for epitaxial growth to the surface of the heated semiconductor wafer.

[0004] Also, in Patent Document 1, a rotational gas for rotating the wafer mounting apparatus is blown onto the lower surface of the wafer mounting apparatus, and an epitaxial growth layer is formed on the surface of the semiconductor wafer while rotating the wafer mounting apparatus.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] As described in Patent Document 1, generally, expensive argon gas is used as the rotating gas to rotate the wafer mounting device, which has the problem of reducing the productivity of epitaxial growth equipment. Furthermore, when the size of semiconductor wafers increases, it is necessary to increase the flow rate of the rotating gas in order to maintain the rotation of the wafer mounting device, which also has the problem of reducing the productivity of epitaxial growth equipment.

[0007] This disclosure is made to solve the above-mentioned problems and aims to provide a wafer mounting apparatus that can suppress the flow rate of the rotation gas by improving the rotation efficiency of the wafer mounting apparatus, thereby suppressing the decrease in productivity of the epitaxial growth apparatus. [Means for solving the problem]

[0008] The wafer mounting apparatus according to this disclosure is a wafer mounting apparatus for mounting a semiconductor wafer, comprising an upper surface located on the lower side of the semiconductor wafer to be mounted, and a lower surface facing the upper surface, the lower surface having a protruding portion that protrudes from the lower surface.

[0009] The wafer mounting apparatus according to this disclosure is a wafer mounting apparatus for mounting a semiconductor wafer, comprising an upper surface located on the lower side of the semiconductor wafer to be mounted, and a lower surface facing the upper surface, wherein the surface roughness of the lower surface is at least greater than the surface roughness of the upper surface. [Effects of the Invention]

[0010] According to the wafer mounting apparatus described herein, the rotational efficiency of the wafer mounting apparatus can be improved, thereby reducing the flow rate of the rotational gas and providing a wafer mounting apparatus that can suppress a decrease in the productivity of the epitaxial growth apparatus. [Brief explanation of the drawing]

[0011] [Figure 1] This is a schematic cross-sectional view showing an example of the configuration of semiconductor manufacturing equipment. [Figure 2]This is a schematic bird's-eye view diagram showing the stage and wafer mounting equipment, which are part of semiconductor manufacturing equipment. [Figure 3] This is a schematic cross-sectional view showing a stage and wafer mounting equipment, which are part of semiconductor manufacturing equipment. [Figure 4] This is a schematic top view showing the stage housing section of a semiconductor manufacturing apparatus. [Figure 5] This is a schematic diagram showing the pins of a stage and wafer mounting equipment, which are part of semiconductor manufacturing equipment. [Figure 6] This is a schematic top view of the wafer mounting apparatus according to Embodiment 1. [Figure 7] This is a schematic cross-sectional view of the wafer mounting apparatus according to Embodiment 1. [Figure 8] This is a schematic bottom view of the wafer mounting apparatus according to Embodiment 1. [Figure 9] This is a schematic diagram illustrating the lower surface of the wafer mounting apparatus according to Embodiment 1. [Figure 10] This is a schematic cross-sectional view showing the positional relationship between the wafer mounting apparatus and the stage according to Embodiment 1. [Figure 11] This is a schematic cross-sectional view of the wafer mounting apparatus according to Embodiment 1. [Figure 12] This is a flowchart showing the manufacturing flow of the wafer mounting device according to Embodiment 1. [Figure 13] This is a schematic cross-sectional view showing an example of the configuration of a semiconductor device manufactured by a semiconductor manufacturing method using a semiconductor manufacturing apparatus equipped with a wafer mounting device according to Embodiment 1. [Figure 14] This is a schematic bird's-eye view of a wafer mounting apparatus according to a modified example 1 of Embodiment 1. [Figure 15] This is a schematic bird's-eye view of a wafer mounting apparatus according to a modified example 1 of Embodiment 1. [Figure 16] This is a schematic cross-sectional view of a wafer mounting apparatus according to a modified example 2 of Embodiment 1. [Figure 17] This is a schematic cross-sectional view of a wafer mounting apparatus according to a modified example 3 of Embodiment 1. [Figure 18] This is a schematic cross-sectional view of a wafer mounting apparatus according to a modified example 3 of Embodiment 1. [Figure 19] It is a flowchart showing the manufacturing flow of the wafer mounting device according to Embodiment 2. [Figure 20] It is a flowchart showing the manufacturing flow of the wafer mounting device according to Embodiment 2. [Figure 21] It is a schematic diagram for explaining the lower surface of the wafer mounting device 130c according to Embodiment 3.

Embodiments for Carrying Out the Invention

[0012] One side in the direction parallel to the depth direction of the semiconductor device is referred to as "upper", and the other side is referred to as "lower". Of the two main surfaces of the substrate, layer or other member, one surface is referred to as the upper surface and the other surface is referred to as the lower surface. The directions of "upper" and "lower" are not limited to the direction of gravity or the direction at the time of mounting the semiconductor device. Also, the upper surface, lower surface and side surfaces of the substrate, layer or other member are referred to as the surface.

[0013] Also, for convenience of explanation, hereinafter, the width direction of the semiconductor device 10 is the x-axis direction, the depth direction of the semiconductor device 10 intersecting the x direction is the y-axis direction, and the thickness direction or depth direction of the semiconductor device 10, that is, the normal direction to the xy plane is the z-axis direction for explanation.

[0014] Also, the drawings are shown schematically, and the mutual relationships of the sizes and positions of the images shown in different drawings are not necessarily accurately described and can be changed as appropriate. Also, in the following description, the same reference numerals are given to the same components for illustration, and their names and functions are also the same. Therefore, detailed descriptions thereof may be omitted.

[0015] Before describing the wafer mounting apparatus according to Embodiment 1, an example of the configuration of a semiconductor manufacturing apparatus having a wafer mounting apparatus will be described using Figure 1. Figure 1 is a schematic cross-sectional view showing an example of the configuration of a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus 100 shown in Figure 1 is an epitaxial growth apparatus and a thermal CVD apparatus. In other words, the semiconductor manufacturing apparatus 100 shown in Figure 1 manufactures an epitaxial wafer by supplying a raw material gas for epitaxial growth to a semiconductor wafer and forming an epitaxial layer on the heated semiconductor wafer. The thermal CVD apparatus may be an atmospheric pressure CVD apparatus or a reduced pressure CVD apparatus. However, since film deposition under reduced pressure has higher in-plane uniformity of film thickness and carrier concentration compared to film deposition under atmospheric pressure, a reduced pressure CVD apparatus is preferable. The semiconductor wafer heating method may be either an induction heating method or a hot-wall method that heats the tube wall of the chamber (reaction chamber that generates the vapor phase growth reaction) to a high temperature. The semiconductor manufacturing apparatus 100 may be a single-wafer type that processes semiconductor wafers one at a time, or a batch type that processes multiple semiconductor wafers at once. The following description will focus on the case where the semiconductor manufacturing equipment 100 is a hot-wall type horizontal batch-type reduced-pressure CVD apparatus. Furthermore, the following description will focus on the case where the semiconductor wafer is a SiC single-crystal wafer, the epitaxial layer is a SiC single-crystal thin film, and the epitaxial wafer is a SiC single-crystal epitaxial wafer, but it is not limited to this case.

[0016] The semiconductor manufacturing apparatus 100 includes a chamber 110, a stage 120 installed inside the chamber 110, a wafer mounting device 130, a raw material gas supply unit 140, and a heating unit 160.

[0017] A raw material gas G1 for epitaxial growth is supplied into the chamber 110. In this embodiment, a reaction space is provided between the wafer mounting device 130 and the top plate 150 which is positioned opposite the upper surface of the wafer mounting device 130 within the chamber 110. The chamber 110 is also evacuable, and in this embodiment, exhaust ports are provided on the outer periphery of the chamber 110 (the left and right ends in Figure 1).

[0018] The stage 120 has an internal flow path 121 for a rotating gas G2 that is blown onto the lower surface 132 of the wafer mounting device 130. The stage 120 comprises a support column 122, a mounting section 123 which is held by the support column 122 and mounts the wafer mounting device 130, and a housing section 124 which houses the raw material gas supply section 140. A recess 126 for mounting the wafer mounting device 130 is formed on the upper surface 125 of the mounting section 123. The stage 120 is sometimes called a "planetary scepter". For example, carbon is used as the base material of the stage 120.

[0019] The wafer mounting device 130 is positioned above the stage 120, and the semiconductor wafer 1 is mounted on it. The wafer mounting device 130 has an upper surface 131 located on the lower side of the semiconductor wafer 1 to be mounted, and a lower surface 132 facing the upper surface 131. As shown in Figure 1, there may be multiple wafer mounting devices 130, or there may be only one. Note that the jig on which the semiconductor wafer 1 is usually placed is called a susceptor, so the wafer mounting device 130 is sometimes called a "susceptor". For example, carbon is used as the base material of the wafer mounting device 130. A detailed explanation of the wafer mounting device 130 will be given later.

[0020] The rotating gas G2 consists of, for example, hydrogen, argon, or a mixture of hydrogen and argon. Hydrogen and argon do not contribute to SiC growth. However, if the stage 120 and wafer mounting device 130 are made of carbon, using hydrogen gas as the rotating gas G2 will cause the hydrogen gas, which becomes hot during the process, to etch the carbon, potentially etching the flow path 121, etc. The residue generated by etching may scatter onto the surface of the semiconductor wafer 1, leading to crystal defects. Therefore, when the stage 120 and wafer mounting device 130 are made of carbon, it is preferable that the rotating gas G2 be argon rather than hydrogen.

[0021] The raw material gas supply unit 140 supplies raw material gas G1 for epitaxial growth into the chamber 110. The raw material gas supply unit 140 is installed so as to penetrate the center of the top plate 150 located above the chamber 110. The lower part of the raw material gas supply unit 140 may also be housed in a concave-shaped housing 124 provided on the stage 120. The raw material gas G1 released from the raw material gas supply unit 140 flows radially, for example, from the center of the chamber 110 outwards (to the left and right sides in Figure 1). The raw material gas G1 supplied parallel to the top surface of the semiconductor wafer 1 is used to form the epitaxial layer of the semiconductor wafer 1 and then discharged out of the chamber 110 through the exhaust port of the chamber 110. The raw material gas supply unit 140 is sometimes referred to as an "injector".

[0022] When forming an epitaxial layer of SiC, the raw material gas G1 can use, for example, silane (SiH4), dichlorosilane (H2SiCl2), trichlorosilane (HSiCl3), silicon tetrachloride (SiCl4), etc. as the Si source, and propane (C3H8), ethane (C2H6), methane (CH4), etc. as the carbon (C) source. In addition, a gas containing hydrogen (H2), for example, can be used as the carrier gas.

[0023] The heating unit 160 heats the semiconductor wafer 1 by heating the stage 120 and the wafer mounting device 130. The heating unit 160 is composed of an induction heating coil and heats the semiconductor wafer 1 by induction heating the stage 120 and the wafer mounting device 130, which are made of, for example, carbon. The heating unit 160 is sometimes referred to as the "induction heating coil".

[0024] Next, a detailed configuration example of the stage 120 and wafer mounting device 130 will be described using Figures 2 to 5. Figure 2 is a schematic bird's-eye view showing the stage 120 and wafer mounting device 130. Figure 3 is a schematic cross-sectional view showing the stage 120 and wafer mounting device 130. Note that Figure 3 is an enlarged view of region A shown in Figure 1. Figure 4 is a schematic top view showing the recess 126 of the stage 120. Note that the dotted line in Figure 4 indicates the outer circumference of the lower surface 132 of the wafer mounting device 130. Figure 5 is a schematic diagram showing the pins 127 of the stage 120 and the wafer mounting device 130. Note that Figure 5 is an enlarged view of region B shown in Figure 3. Note that the semiconductor wafer 1 is omitted in Figure 5.

[0025] As shown in Figure 2, the stage 120 may be a planetary receptor type capable of rotating multiple semiconductor wafers 1 around itself.

[0026] As shown in Figure 3, the wafer mounting device 130 is rotatably held by pins 127 provided in the recess 126 of the stage 120.

[0027] As shown in Figures 3 and 4, a spiral groove 128 is formed in the bottom surface 126a of the recess 126 of the stage 120. In this embodiment, as shown in Figure 4, the groove 128 extends in a counterclockwise spiral from the center of the bottom surface 126a toward the outer circumference. Also, as shown in Figure 4, an outlet 129 is provided at the end of the groove 128 that is on the center side of the bottom surface 126a. The outlet 129 is connected to a flow path 121, and the rotating gas G2 that has flowed through the flow path 121 is ejected from the outlet 129. As described above, since the outlet 129 is provided at the end of the groove 128 that is on the center side of the bottom surface 126a, the rotating gas G2 is blown onto the center of the lower surface 132 of the wafer mounting device 130. The gas flows parallel to the lower surface 132 of the wafer mounting device 130 through the gap between the lower surface 132 of the wafer mounting device 130 and the groove 128.

[0028] The rotating gas G2, which is blown onto the center of the lower surface 132 of the wafer mounting device 130, flows parallel to the lower surface 132 of the wafer mounting device 130, from the center of the lower surface 132 of the wafer mounting device 130 towards the outer periphery, through the gap between the wafer mounting device 130 and the groove 128. As described above, the wafer mounting device 130 rotates due to the rotating gas G2 flowing along the lower surface 132 of the wafer mounting device 130. In this embodiment, as described above, the groove 128 is provided extending in a counterclockwise spiral from the center of the bottom surface 126a of the recess 126 towards the outer periphery, so the rotating gas G2 flows counterclockwise along the groove 128, and the wafer mounting device 130 rotates counterclockwise. The groove 128 may also be provided extending in a clockwise spiral from the center of the bottom surface 126a of the recess 126 toward the outer circumference. In this case, the rotating gas G2 flows clockwise along the groove 128, and the wafer mounting device 130 rotates clockwise.

[0029] The rotating gas G2 flows toward the outer periphery of the lower surface 132 of the wafer mounting device 130, then exits the recess 126 from the outer periphery of the lower surface 132 of the wafer mounting device 130, and is exhausted from the exhaust port described above.

[0030] Figure 5 shows the forces acting on the wafer mounting device 130, which is rotatably held by the pin 127. Gravity F1(Mg) acts on the wafer mounting device 130, and a rotating gas G2 is blown perpendicularly onto the lower surface 132 of the wafer mounting device 130, so a wind load F2(f) acts perpendicularly to the lower surface 132 of the wafer mounting device 130. Therefore, the normal force that the wafer mounting device 130 receives from the pin 127 is Mg-f, and the frictional force F3(μ(Mg-f)) acting between the wafer mounting device 130 and the pin 127 is obtained by multiplying the normal force by the coefficient of friction between the wafer mounting device 130 and the pin 127. The frictional force F3 acts in the opposite direction to the rotation direction of the wafer mounting device 130. In this embodiment, since the wafer mounting device 130 rotates counterclockwise, the frictional force F3 acts clockwise. Therefore, the greater the frictional force F3, the more the rotation of the wafer mounting device 130 is inhibited. In other words, the greater the gravity F1, the greater the frictional force F3, making it more difficult for the wafer mounting device 130 to rotate. Conversely, the greater the wind load F2, the smaller the frictional force F3, making it easier for the wafer mounting device 130 to rotate. Thus, the greater the weight of the semiconductor wafer 1 mounted on the wafer mounting device 130, the more difficult it becomes for the wafer mounting device 130 to rotate, and the greater the wind speed of the rotating gas G2, the easier it becomes for the wafer mounting device 130 to rotate.

[0031] As described above, in the semiconductor manufacturing apparatus 100, the rotating gas G2, which passes through a channel 121 provided inside the stage 120 and is ejected from the nozzle 129, is blown onto the lower surface 132 of the wafer mounting apparatus 130, causing the wafer mounting apparatus 130 to rotate. In this way, the semiconductor wafer 1 can be made to rotate on its own. Furthermore, if multiple semiconductor wafers 1 are provided, in addition to the rotation of the wafer mounting apparatus 130, a mechanism of the semiconductor manufacturing apparatus 100 (not shown) may mechanically rotate the stage 120 around the support column 122, as shown in Figure 1. In this way, the semiconductor wafer 1 can be made to rotate on its own and revolve. Since the growth rate and carrier concentration of the epitaxial layer on the semiconductor wafer 1 differ between the upstream region of the raw material gas G1 (i.e., the region close to the raw material gas supply unit 140) and the downstream region (i.e., the region far from the raw material gas supply unit 140), the uniformity of the in-plane growth rate and carrier concentration of the semiconductor wafer 1 can be improved by rotating the semiconductor wafer 1 or by making the semiconductor wafer 1 rotate on its own and revolve.

[0032] Embodiment 1. The wafer mounting apparatus 130a according to Embodiment 1 will be described below with reference to Figures 6 to 10. Figure 6 is a schematic top view of the wafer mounting apparatus 130a according to Embodiment 1. Figure 7 is a schematic cross-sectional view of the wafer mounting apparatus 130a according to Embodiment 1. Note that Figure 7 shows the cross section along the dashed line X-X shown in Figure 6. Figure 8 is a schematic bottom view of the wafer mounting apparatus 130a according to Embodiment 1. Figure 9 is a schematic diagram illustrating the bottom surface of the wafer mounting apparatus 130a according to Embodiment 1. Figure 10 is a schematic cross-sectional view showing the positional relationship between the wafer mounting apparatus 130a and the stage 120 according to Embodiment 1. Note that H in Figure 10 is the distance between the stage 120 and the wafer mounting apparatus 130a, h in Figure 10 is the height of the protrusion 136, and W in Figure 10 is the period in which the protrusion 136 is provided.

[0033] As shown in Figure 7, the wafer mounting apparatus 130a includes a mounting section 133 and a wall section 134.

[0034] A semiconductor wafer 1 is placed on the mounting section 133. As shown in Figure 6, the semiconductor wafer 1 may have an orientation flat 1a and may have a notch. As shown in Figure 7, the mounting section 133 has an upper surface 131 facing the semiconductor wafer 1 and a lower surface 132 facing the upper surface 131. In this embodiment, the semiconductor manufacturing apparatus 100 forms an epitaxial layer made of SiC on the surface of the SiC semiconductor wafer 1 mounted on the mounting section 133.

[0035] During the formation of the epitaxial layer, the center of the semiconductor wafer 1 may warp, protruding downwards (i.e., towards the mounting portion 133). In this case, if the upper surface 131 of the mounting portion 133 is flat, the lower surface of the center of the semiconductor wafer 1 will partially come into contact with the upper surface 131 of the mounting portion 133. When the semiconductor wafer 1 and the mounting portion 133 come into contact, the temperature within the plane of the semiconductor wafer 1 will vary, which can cause variations in the epitaxial layer thickness and carrier concentration, which are important parameters. Therefore, as shown in Figure 7, it is desirable to provide a bowl-shaped recess 135 on the upper surface 131 of the mounting portion 133 to support the semiconductor wafer 1 at its outer periphery, preventing the lower surface of the center of the semiconductor wafer 1 from coming into contact with the upper surface 131 of the mounting portion 133. By doing so, variations in the epitaxial layer thickness and carrier concentration can be suppressed. Furthermore, if the outer periphery of the semiconductor wafer 1 is held at points, for example with lift-up pins, and sufficient space is provided between the semiconductor wafer 1 and the upper surface 131 of the mounting portion 133, and the possibility of the lower central surface of the semiconductor wafer 1 contacting the wafer mounting device 130 is low, then a bowl-shaped recess 135 does not need to be provided on the upper surface 131 of the mounting portion 133. Also, if the size of the semiconductor wafer 1 is small (for example, 4 inches), a bowl-shaped recess 135 does not need to be provided on the upper surface 131 of the mounting portion 133.

[0036] The wall portion 134 is provided projecting upward from the upper surface 131 of the mounting portion 133. The height of the wall portion 134 is equal to or greater than the thickness of the semiconductor wafer 1. In the semiconductor manufacturing apparatus 100 according to this embodiment, the semiconductor wafer 1 rotates and revolves, but the displacement of the semiconductor wafer 1 can be suppressed by the wall portion 134.

[0037] The mounting portion 133 and wall portion 134 of the wafer mounting device 130a may be formed by providing a counterbore (recess) in the disc member, as shown in Figure 7.

[0038] As shown in Figures 7 and 8, the lower surface 132 of the mounting portion 133 has a protrusion 136 that protrudes from the lower surface 132. In this embodiment, the protrusion 136 is provided in addition to the minute random irregularities that occur on the surface of the wafer mounting device 130a when the base material of the wafer mounting device 130a is machined by a general processing method such as turning. The average height (surface roughness) of the minute random irregularities that occur on the surface of the wafer mounting device 130a varies depending on the material and processing method, but for general materials and processing methods, it is about a few micrometers. The height of the protrusion 136 is about a few tens of micrometers to a few millimeters, for example, about 10 micrometers to 2 mm. It is desirable that the protrusion 136 be provided integrally with the mounting portion 133, but it may also be provided as a separate component from the mounting portion 133.

[0039] As shown in Figures 7 and 8, the protrusions 136 are arranged regularly in multiple locations. For example, the spacing between each protrusion 136 may be constant, and the height of each protrusion 136 may be constant.

[0040] Furthermore, as shown in Figures 7 and 8, it is desirable that the protrusions 136 be arranged regularly and be arranged in a manner that is N times symmetric with respect to a central point O centered on the center of the lower surface 132 of the wafer mounting device 130a. In other words, the value of the central angle passing through the central point O centered on the center of the lower surface 132 of the wafer mounting device 130a is arbitrarily set, and when the area is divided in the circumferential direction by the value of that central angle, the protrusions 136 may be provided in each area in a manner that is N times symmetric with respect to the central point O. For example, the protrusions 136 may be provided in a manner that is 4 times symmetric with respect to the central point O. As shown in Figure 9, when the central angle passing through the central point O centered on the center of the lower surface 132 of the wafer mounting device 130a is set to 90 degrees and the area is divided in the circumferential direction into areas 1 to 4, the protrusions 136 may be provided in areas 1 to 4 in a manner that is 4 times symmetric with respect to the central point O. As shown in Figure 8, the protrusions 136 may be arranged in a rotationally symmetric manner with respect to any integer N, or the protrusions 136 may be arranged concentrically with respect to a central point O centered on the center of the lower surface 132 of the wafer mounting device 130a. In that case, the size of the central angle can be any angle.

[0041] Furthermore, as shown in Figure 7, the cross-sectional shape of the projection 136 may be triangular. If the cross-sectional shape of the projection 136 is, for example, triangular, then, as shown in Figure 7, the area of ​​the first surface 137 of the projection 136 and the area of ​​the second surface 138 facing the first surface 137 may be the same size. The first surface 137 is the opposing surface that faces the direction of travel of the rotating gas G2.

[0042] Furthermore, the value of distance H shown in Figure 10 depends on the length of the pins 127 that hold the wafer mounting device 130a, and the value of Hh is usually set to a few millimeters. This is because if the value of Hh is made extremely small, even a slight tilt of the wafer mounting device 130a could cause the wafer mounting device 130a to come into contact with the stage 120, increasing the likelihood that the wafer mounting device 130a will stop rotating.

[0043] Furthermore, if the value of Hh is kept constant and the value of h is made extremely large, the thickness of the wafer mounting device 130a will have areas that are extremely thick and areas that are extremely thin. As mentioned above, the wafer mounting device 130a is induction heated by the heating unit 160, so if there are areas where the thickness of the wafer mounting device 130a fluctuates drastically, the in-plane temperature uniformity of the wafer mounting device 130a will deteriorate, which will be a factor in worsening the in-plane temperature uniformity of the semiconductor wafer 1. For the reasons above, considering that the value of Hh is around a few millimeters, it is desirable that the maximum value of h be around 2 mm.

[0044] Furthermore, the period W at which the protrusion 136 is provided is less constrained than the height h of the protrusion 136. However, if the value of W is extremely small, the width of the tip portion of the protrusion 136 may become extremely small and break, so it is desirable that the value of W be around 1 to 9 mm.

[0045] The wafer mounting apparatus 130a of this embodiment is configured as described above. The lower surface 132 of the wafer mounting apparatus 130a has a protrusion 136. By adopting the above configuration, the rotational efficiency of the wafer mounting apparatus can be improved, thereby suppressing the flow rate of the rotational gas and preventing a decrease in the productivity of the epitaxial growth apparatus. The reason for this will be explained below.

[0046] As described above, the rotating gas G2 ejected from the nozzle 129 of the stage 120 is blown onto the center of the lower surface 132 of the wafer mounting device 130a, and then flows parallel to the lower surface of the wafer mounting device 130a through the gap between the wafer mounting device 130a and the groove 128, from the center of the lower surface 132 of the wafer mounting device 130a toward the outer periphery. At this time, the larger the wind-receiving area of ​​the protrusion provided on the lower surface 132 of the wafer mounting device 130a, which is the area that receives the rotating gas G2, the greater the magnitude of the wind load F4 acting in the rotational direction of the wafer mounting device 130a. Since the wind load F4 acts in the rotational direction of the wafer mounting device 130, the wind load F4 contributes to the rotation of the wafer mounting device 130a, and the larger the wind load F4, the better the rotational efficiency of the wafer mounting device 130a.

[0047] Conventional wafer mounting equipment has minute, random irregularities on its surface when the base material is machined using common processing methods such as turning. Although the average height of these irregularities (surface roughness) varies depending on the material and processing method, it is generally around a few micrometers, thus minimizing the air-receiving area mentioned above.

[0048] As mentioned above, the rotating gas G2 is generally composed of high-cost argon. Conventional wafer mounting equipment has an extremely small wind-receiving area, as described above, so it is necessary to use a constant flow rate of argon gas to rotate the wafer mounting equipment. In addition, the diameter of SiC wafers is increasing, and there are 8-inch SiC wafers and epitaxial growth equipment that can handle 8-inch SiC wafers. When the size of the semiconductor wafer 1 is increased, the gravitational force F1 acting on the wafer mounting equipment 130 increases. If the wind load F2 from the rotating gas G2 blown onto the lower surface 132 of the wafer mounting equipment 130 is kept constant, the frictional force F3 acting between the wafer mounting equipment 130 and the pin 127 will increase by the amount of the increase in the gravitational force F1 acting on the wafer mounting equipment 130. For example, when the size of the semiconductor wafer 1 is increased from 6 inches to 8 inches, the gravitational force F1 increases by approximately 1.8 times, so the frictional force F3 acting between the wafer mounting equipment 130 and the pin 127 increases by approximately 1.8 times. As described above, the frictional force F3 hinders the rotation of the wafer mounting device 130, so in order to maintain the rotation of the wafer mounting device 130, it is necessary to increase the flow rate of the rotating gas G2.

[0049] In contrast, the wafer mounting apparatus 130a of this embodiment has a lower surface 132 with a protruding portion 136 that protrudes from the lower surface 132. By providing the protruding portion 136, the wind receiving area on the lower surface of the wafer mounting apparatus that receives the rotating gas can be increased compared to conventional designs, increasing the magnitude of the wind load acting in the rotational direction of the wafer mounting apparatus and improving the rotational efficiency of the wafer mounting apparatus. Therefore, the wafer mounting apparatus 130a of this embodiment can suppress the flow rate of the rotating gas compared to conventional designs. As a result, when high-cost argon gas is used as the rotating gas to rotate the wafer mounting apparatus, the flow rate of argon gas can be suppressed compared to conventional designs, thereby suppressing a decrease in the productivity of the epitaxial growth apparatus. Furthermore, when mounting a larger semiconductor wafer 1 on the wafer mounting apparatus, the rotation of the wafer mounting apparatus can be maintained by suppressing the flow rate of the rotating gas compared to conventional designs, thereby suppressing a decrease in the productivity of the epitaxial growth apparatus.

[0050] In the above description, the mounting portion 133 and wall portion 134 of the wafer mounting device 130a were formed by creating a recess in the disc member. However, as shown in Figure 11, they may also be formed by connecting individually formed mounting portions 133 and wall portions 134. The former method of formation reduces parts costs, while the latter method allows for free combination of materials and coatings for the mounting portion 133 and wall portion 134, thereby increasing design flexibility. The choice of which formation method to apply should be determined according to the purpose of the wafer mounting device.

[0051] As mentioned above, it is desirable that the protrusions 136 be arranged regularly in multiple locations and that they be arranged to be N times symmetrical with respect to the center point O, which is the center of the lower surface 132 of the wafer mounting device 130a. The rotating gas G2 flows in a constant direction from the center of the lower surface 132 of the wafer mounting device 130 toward the outer periphery of the wafer mounting device 130, and the wafer mounting device 130 rotates around the center point O due to the rotating gas G2, so the rotation of the wafer mounting device can be stabilized by the above configuration.

[0052] Next, the manufacturing method of the wafer mounting apparatus 130a of this embodiment will be described with reference to Figure 12. Figure 12 is a flowchart showing the manufacturing flow of the wafer mounting apparatus 130a of this embodiment. Note that, except for the protrusion formation process, the manufacturing method of the wafer mounting apparatus 130a is basically the same as the manufacturing method of conventional wafer mounting apparatuses, so some parts will be omitted from the explanation.

[0053] The manufacturing method of the wafer mounting apparatus 130a in this embodiment includes a base material processing step, a protrusion formation step, and a coating step.

[0054] First, the base material processing step ST1001 is performed. In the base material processing step, the base material of the wafer mounting device 130a is machined. For example, the base material is machined by machining such as turning. With general machining methods such as turning, the surface roughness of the upper surface 131 of the wafer mounting device 130b is about a few micrometers.

[0055] After step ST1001, step ST1002 is performed to form the protrusion. In the protrusion formation step, a protrusion 136 is formed on the lower surface 132 of the wafer mounting device 130a. Note that the order of steps ST1001 and ST1002 may be reversed (step ST1002 followed by step ST1001). If the protrusion 136 is formed integrally with the wafer mounting device 130, the protrusion formation step may be performed when the base material processing step described above is performed. In other words, the protrusion 136 may be formed when the base material is machined by turning or other machining processes.

[0056] After step ST1002, a coating process is performed in step ST1003. In the coating process, the surface of the wafer mounting device 130a is coated using a coating material.

[0057] The wafer mounting device 130a is manufactured through the process described above. By forming a protrusion 136 on the lower surface 132 of the wafer mounting device 130a in the protrusion formation process, as described above, the magnitude of the wind load acting in the rotational direction of the wafer mounting device is increased compared to the conventional method, thereby improving the rotational efficiency of the wafer mounting device.

[0058] Next, a method for manufacturing a semiconductor device 10 using the semiconductor manufacturing apparatus 100 having the wafer mounting device 130a of this embodiment will be described. The method for manufacturing a semiconductor device 10 using the semiconductor manufacturing apparatus 100 having the wafer mounting device 130a of this embodiment is basically the same as the conventional method for manufacturing a semiconductor device using a semiconductor manufacturing apparatus having a wafer mounting device, so some parts will be omitted from the explanation.

[0059] The manufacturing method of the semiconductor device 10 in this embodiment includes a mounting step, a supply step, a heating step, and a rotation step.

[0060] First, let's explain the mounting process. In the mounting process, the semiconductor wafer 1 is mounted on the wafer mounting apparatus 130a of this embodiment.

[0061] Next, the supply process will be described. In the supply process, the raw material gas supply unit 140 supplies raw material gas G1 to the surface of the semiconductor wafer 1 mounted on the wafer mounting device 130a.

[0062] Next, the heating process will be described. In the heating process, the semiconductor wafer 1 mounted on the wafer mounting device 130a is heated by the heating unit 160.

[0063] Next, the rotation process will be explained. In the rotation process, the wafer mounting device 130a on which the semiconductor wafer 1 is mounted is rotated by blowing the rotating gas G2 ejected from the nozzle of the stage onto the lower surface 132 of the wafer mounting device 130a.

[0064] Through the process described above, an epitaxial layer is formed on the semiconductor wafer 1, and a semiconductor device having the epitaxial layer is manufactured. As described above, the method for manufacturing a semiconductor device using the semiconductor manufacturing apparatus 100 having the wafer mounting apparatus 130a of this embodiment includes a mounting step, in which the semiconductor wafer 1 is mounted on the wafer mounting apparatus 130a of this embodiment. By doing so, the rotation efficiency of the wafer mounting apparatus can be improved in the rotation step, so that the flow rate of the rotation gas G2 can be suppressed, and the decrease in productivity of the epitaxial growth apparatus can be suppressed.

[0065] Next, a semiconductor device 10 comprising an epitaxial layer 12 formed by the semiconductor device manufacturing method described above and a semiconductor layer will be explained with reference to Figure 13. Figure 13 is a schematic cross-sectional view showing an example of the configuration of a semiconductor device 10 manufactured by a semiconductor device manufacturing method using a semiconductor manufacturing apparatus 100 equipped with a wafer mounting apparatus 130a according to Embodiment 1.

[0066] As shown in Figure 13, an epitaxial layer 12 is provided on the surface of a semiconductor substrate 11 corresponding to a semiconductor wafer 1.

[0067] Furthermore, a semiconductor layer for forming a semiconductor device is provided within the epitaxial layer 12. The detailed structure of the semiconductor layer is the same as that of a conventional semiconductor layer, so a detailed explanation is omitted.

[0068] Furthermore, since multiple semiconductor devices 10 are fabricated in a matrix on a single semiconductor wafer 1, the semiconductor device 10 shown in Figure 13 is completed by cutting the single semiconductor wafer 1 into individual semiconductor devices 10 in chip form, for example, by laser dicing or blade dicing.

[0069] Next, a modified example of Embodiment 1 will be described using Figures 14 to 18. First, Modification 1 of Embodiment 1 will be described using Figures 14 and 15. Figures 14 and 15 are schematic bird's-eye views of the wafer mounting apparatus 130a according to Modification 1 of Embodiment 1.

[0070] In Embodiment 1, the protrusion 136 was provided so as to be circularly symmetric with respect to a center point O centered on the center of the lower surface 132 of the wafer mounting device 130a. However, as shown in Figures 14 and 15, the protrusion 136 may be provided so as to be eight times symmetric with respect to the center point O, for example.

[0071] As shown in Figure 14, the cross-sectional shape of the protrusion 136 may be triangular, but is arbitrary. In Figure 14, the maximum height of the protrusion 136 is indicated by h, but as mentioned above, considering that Hh is about a few millimeters, it is desirable that the maximum height of h be about 2 mm.

[0072] Furthermore, as shown in Figure 15, the protrusion 136 may be provided in the shape of an impeller. The number of blades of the impeller may be, for example, 8, as shown in Figure 15, or any number. In addition, although the maximum height of the impeller is indicated by h in Figure 15, considering that Hh is about a few millimeters as mentioned above, it is desirable that the maximum height of h be about 2 mm.

[0073] As shown in Figure 15, when the protrusion 136 is provided in the shape of an impeller, the rotating gas G2 blown perpendicularly to the lower surface 132 of the wafer mounting device 130a can also be used to rotate the wafer mounting device 130a. In detail, the rotating gas G2 blown perpendicularly to the lower surface 132 of the wafer mounting device 130a collides with the blades of the inclined impeller, and a portion of the wind load F2 acting perpendicularly to the lower surface 132 of the wafer mounting device 130a by the rotating gas G2 acts as a force that moves the blades of the impeller in the rotational direction, thereby allowing the wafer mounting device 130a to rotate. Furthermore, since the rotating gas G2 flows along the spiral groove 128 provided on the bottom surface 126a of the stage 120, it flows in a spiral vortex-like manner, as shown in Figure 15. At that time, the rotating gas G2 flows in a way that pushes the blades of the impeller, which can further improve the rotational efficiency of the wafer mounting device.

[0074] Next, a modified example 2 of Embodiment 1 will be described using Figure 16. Figure 16 is a schematic cross-sectional view of a wafer mounting apparatus 130a according to a modified example 2 of Embodiment 1.

[0075] In Embodiment 1, the cross-sectional shape of the protrusion 136 was triangular, but as shown in Figure 16(a), the cross-sectional shape of the protrusion 136 may be semicircular, and as shown in Figure 16(b), the cross-sectional shape of the protrusion 136 may be rectangular. In Figure 16, the maximum height of the protrusion 136 is indicated by h, but as mentioned above, considering that Hh is about a few millimeters, it is desirable that the maximum height of h be about 2 mm. If the height h of the protrusion 136 shown in Figure 10 and the height h of the protrusion 136 shown in Figure 16 are the same, the air-receiving area of ​​the first surface 137, which is the surface that contributes to the rotation of the wafer mounting device 130, is larger when the cross-sectional shape of the protrusion 136 is triangular as shown in Figure 10 or when the cross-sectional shape of the protrusion 136 is semicircular as shown in Figure 16(a), compared with the case where the cross-sectional shape of the protrusion 136 is rectangular as shown in Figure 16(b). Therefore, the magnitude of the wind load acting in the rotational direction of the wafer mounting apparatus 130a is increased in Figure 10 and Figure 16(a) compared to the wafer mounting apparatus 130a shown in Figure 16(b), thus further improving the rotational efficiency of the wafer mounting apparatus.

[0076] Next, a third modification of Embodiment 1 will be described using Figures 17 and 18. Figures 17 and 18 are schematic cross-sectional views of the wafer mounting apparatus 130a according to the third modification of Embodiment 1. Note that the schematic cross-sectional views of the wafer mounting apparatus 130a shown in Figures 17 and 18 are simplified cross-sectional views showing only the right half of the wafer mounting apparatus 130a. In reality, the cross-section of the wafer mounting apparatus 130a also exists on the left half, symmetrically with respect to the center line Z passing through the center point O centered on the center of the lower surface 132 of the wafer mounting apparatus 130a.

[0077] In the wafer mounting apparatus 130a according to the third modification of Embodiment 1, the area of ​​the first surface 137 of the protruding portion 136 is larger than the area of ​​the second surface 138. The first surface 137 is a facing surface that is opposite to the direction of travel of the rotating gas G2, as shown in Figures 17 and 18.

[0078] The rotating gas G2 flows in a constant direction from the center of the lower surface 132 of the wafer mounting device 130 toward the outer periphery of the wafer mounting device 130, and the rotating gas G2 proceeds while colliding with and overcoming the protrusions 136 of the lower surface 132 of the wafer mounting device 130. Since the rotating gas G2 does not flow from the outer periphery toward the center of the wafer mounting device 130, the second surface 138 that does not face the direction of travel of the rotating gas G2 does not contribute to the rotation of the wafer mounting device 130, and the only surface that contributes to the rotation of the wafer mounting device 130 is the first surface 137 that faces the direction of travel of the rotating gas G2.

[0079] Assuming that the height h of the protrusion 136 shown in Figure 10 is the same as the height h of the protrusion 136 shown in Figures 17 and 18, if the area of ​​the first surface 137 is larger than the area of ​​the second surface 138, as shown in Figures 17 and 18, the wind-receiving area of ​​the first surface 137, which is the surface that contributes to the rotation of the wafer mounting device 130, becomes larger compared to the case where the areas of the first surface 137 and the second surface 138 are the same, as shown in Figure 10. Therefore, the magnitude of the wind load acting in the rotational direction of the wafer mounting device increases compared to the wafer mounting device 130a shown in Figure 10, and thus the rotational efficiency of the wafer mounting device can be further improved.

[0080] As shown in Figure 17(a), the cross-sectional shape of the protrusion 136 may be triangular, and as shown in Figure 17(b), the cross-sectional shape of the protrusion 136 may be trapezoidal. The cross-sectional shape of the protrusion 136 is arbitrary.

[0081] As shown in Figure 17, the first surface 137 may be a flat surface, and as shown in Figure 18, the first surface 137 may be a curved surface. Figure 18(a) shows the first surface 137 shown in Figure 17(a) as a curved surface, and Figure 18(b) shows the first surface 137 shown in Figure 17(b) as a curved surface.

[0082] Assuming that the height h of the protrusion 136 shown in Figure 17 and the height h of the protrusion 136 shown in Figure 18 are constant, if the first surface 137 is a curved surface as shown in Figure 18, the area of ​​the first surface 137 can be made even larger compared to the case where the first surface 137 is a flat surface as shown in Figure 17, thus increasing the wind-receiving area. Therefore, the magnitude of the wind load acting in the rotational direction of the wafer mounting device can be increased compared to the wafer mounting device 130a shown in Figure 17, thus further improving the rotational efficiency of the wafer mounting device.

[0083] In the case of the wafer mounting apparatus 130a shown in Figures 14 and 15, it is desirable that the area of ​​the first surface 137 is larger than the area of ​​the second surface 138. The first surface 137 is the opposing surface that faces the direction of travel of the rotating gas G2, as shown in Figures 14 and 15.

[0084] Furthermore, in the case of the wafer mounting apparatus 130a shown in Figures 14 and 15, it is also desirable that the first surface 137 be a curved surface.

[0085] Embodiment 2. The wafer mounting apparatus 130b in Embodiment 2 will now be described.

[0086] In the wafer mounting apparatus 130b of Embodiment 2, the surface roughness of the lower surface 132 of the wafer mounting apparatus 130b is greater than the surface roughness of at least one of the surfaces other than the lower surface 132. In the wafer mounting apparatus 130a of Embodiment 1, when the base material of the wafer mounting apparatus 130a is machined by a general processing method, in addition to the minute random irregularities that occur on the surface of the wafer mounting apparatus, a protrusion 136 is provided on the lower surface 132 of the wafer mounting apparatus 130a. However, the wafer mounting apparatus 130b of Embodiment 2 differs in that, instead of additionally providing a protrusion 136 on the lower surface 132 of the wafer mounting apparatus 130b, the average height (surface roughness) of the minute random irregularities that occur on the lower surface 132 of the wafer mounting apparatus 130b is greater than the average height (surface roughness) of the minute random irregularities that occur on at least one of the surfaces other than the lower surface 132.

[0087] Furthermore, the surface roughness of at least one surface of the wafer mounting device 130b other than the bottom surface 132 is approximately a few micrometers for typical materials and processing methods. In contrast, the surface roughness of the bottom surface 132 of the wafer mounting device 130b is approximately several tens to several hundred micrometers.

[0088] The wafer mounting apparatus 130b may have a surface roughness of its lower surface 132 that is greater than, for example, the surface roughness of all other surfaces (top surface and side surfaces), and of the other surfaces, at least the surface roughness of the upper surface 131 may be greater than the surface roughness of the upper surface 131.

[0089] As described above, the wafer mounting apparatus 130b of Embodiment 2 is configured.

[0090] In this embodiment, the wafer mounting apparatus 130b has a surface roughness greater than that of the lower surface 132 of the wafer mounting apparatus 130b than that of at least one of the surfaces other than the lower surface 132. As a result, the average height of the irregularities on the lower surface 132 of the wafer mounting apparatus 130b is greater than in the conventional apparatus, and the air receiving area that receives the rotating gas on the lower surface of the wafer mounting apparatus is increased. This increases the magnitude of the wind load acting in the rotational direction of the wafer mounting apparatus, and thus improves the rotational efficiency of the wafer mounting apparatus. Therefore, with the wafer mounting apparatus 130b of this embodiment, the flow rate of the rotating gas G2 can be suppressed compared to the conventional apparatus, and the decrease in productivity of the epitaxial growth apparatus can be suppressed.

[0091] Next, the manufacturing method of the wafer mounting apparatus 130b of this embodiment will be described with reference to Figure 19. Figure 19 is a flowchart of the manufacturing flow of the wafer mounting apparatus 130b of this embodiment. Note that, except for the surface roughening process, the manufacturing method of the wafer mounting apparatus 130b is basically the same as the manufacturing method of conventional wafer mounting apparatuses, so some parts will be omitted from the explanation.

[0092] The manufacturing method of the wafer mounting apparatus 130b in this embodiment includes a base material processing step, a surface roughening step, and a coating step.

[0093] First, the base material processing step ST2001 is performed. In the base material processing step, the base material of the wafer mounting device 130b is machined. For example, the base material of the wafer mounting device 130b is machined by machining such as turning. With general machining methods such as turning, the surface roughness of the wafer mounting device 130b will be about a few micrometers.

[0094] After step ST2001, a surface roughening process is performed in step ST2002. In the surface roughening process, at least the lower surface 132 of the wafer mounting device 130b is roughened. Note that in the surface roughening process, the surface roughening process may be performed only on the lower surface 132 of the wafer mounting device 130b, or the surface roughening process may be performed on the entire surface of the wafer mounting device 130b. In the surface roughening process, for example, the surface roughening process may be performed by blasting. If blasting is used, the surface roughness of the lower surface 132 of the wafer mounting device 130b can be made to about several tens of micrometers to several hundred micrometers.

[0095] After step ST2002, the coating process is performed in step ST2003. In the coating process, the surface of the wafer mounting device 130b is coated with a coating material.

[0096] The wafer mounting device 130b is manufactured through the process described above. In the surface roughening process, at least the lower surface 132 of the wafer mounting device 130b is roughened, which increases the average height of the irregularities on the lower surface 132 of the wafer mounting device 130b compared to conventional methods, and increases the wind-receiving area. As a result, the magnitude of the wind load acting in the rotational direction of the wafer mounting device increases, and the rotational efficiency of the wafer mounting device can be improved.

[0097] Alternatively, the wafer mounting apparatus 130b may be manufactured according to the manufacturing flow of the wafer mounting apparatus 130b as shown in Figure 20.

[0098] First, the base material processing step ST2011 is performed. In the base material processing step shown in Figure 20, the base material of the wafer mounting device 130b is machined using a processing method that results in a rougher surface than conventional methods. For example, by using a machining process such as planing, the surface roughness of the wafer mounting device 130b can be reduced to about several tens of micrometers.

[0099] After step ST2011, a polishing process is performed in step ST2012. In the polishing process, at least one surface of the wafer mounting device 130b other than the bottom surface is polished. Note that in the polishing process, for example, only the top surface 131 of the wafer mounting device 130b may be polished, or all surfaces of the wafer mounting device 130b other than the bottom surface 132 may be polished.

[0100] After step ST2012, the coating process is performed in step ST2013. In the coating process, the surface of the wafer mounting device 130b is coated with a coating material.

[0101] The wafer mounting device 130b may be manufactured by the process described above. In the base material processing process, by machining the base material of the wafer mounting device 130b in a way that increases surface roughness, the average height of the irregularities on the lower surface 132 of the wafer mounting device 130b becomes larger than in the conventional method, and the air receiving area becomes larger. As a result, the magnitude of the wind load acting in the rotational direction of the wafer mounting device increases, and the rotational efficiency of the wafer mounting device can be improved.

[0102] Furthermore, the polishing step ST2012 described above may be omitted. In other words, the entire surface of the wafer mounting apparatus 130b may be made rougher than in the conventional method.

[0103] Embodiment 3. The wafer mounting apparatus 130c in Embodiment 3 will be described with reference to Figure 21. Figure 21 is a schematic diagram illustrating the lower surface 132 of the wafer mounting apparatus 130c according to Embodiment 3.

[0104] The wafer mounting apparatus 130c of Embodiment 3 combines the protrusions 136 provided on the lower surface 132 of the wafer mounting apparatus 130a of Embodiment 1 with the random minute irregularities provided on the lower surface 132 of the wafer mounting apparatus 130b of Embodiment 2. Furthermore, the wafer mounting apparatus 130c of Embodiment 3 combines the differently shaped protrusions 136 described in Embodiment 1 and the modified example of Embodiment 1. As shown in Figure 21, for example, the area of ​​the lower surface 132 of the wafer mounting apparatus 130c may be divided into the radially inner and outer areas, with the radially inner area being the first area AR1 and the radially outer area being the second area AR2.

[0105] For example, the first area AR1 may be provided with the impeller-shaped projection 136 shown in Figure 15, and the second area AR2 may be provided with only the outer periphery of the radially extending projection 136 shown in Figure 14 to make the first surface 137 a curved surface, and furthermore, random minute irregularities as described in Embodiment 2 may be provided on the first surface 137. Note that the combination of the projection 136 described in Embodiment 1 and the random minute irregularities described in Embodiment 2, as well as the combination of the differently shaped projections 136 described in Embodiment 1 and the modified version of Embodiment 1, are arbitrary and may be changed as appropriate depending on the purpose.

[0106] As described above, the wafer mounting apparatus 130c of Embodiment 3 is configured. The wafer mounting apparatus 130c of Embodiment 3 combines the protrusions 136 provided on the lower surface 132 of the wafer mounting apparatus 130a of Embodiment 1 with the random minute irregularities provided on the lower surface 132 of the wafer mounting apparatus 130b of Embodiment 2. Furthermore, since it combines the differently shaped protrusions 136 described in Embodiment 1 and the modified example of Embodiment 1, the magnitude of the wind load acting in the rotational direction of the wafer mounting apparatus can be optimized, and the rotational efficiency of the wafer mounting apparatus can be further improved.

[0107] The configurations shown in the embodiments described above are merely examples of the content of this disclosure and can be combined with other known technologies. Furthermore, the embodiments can be combined with each other, as well as with each other, and variations can be combined. Additionally, parts of the configuration can be omitted or modified without departing from the gist of this disclosure.

[0108] The various aspects of this disclosure are summarized below as an appendix.

[0109] (Note 1) A wafer mounting device on which semiconductor wafers are mounted, The upper surface located on the lower side of the semiconductor wafer on which it is mounted, It comprises a lower surface facing the upper surface, The lower surface has a protruding portion that extends from the lower surface, wherein the wafer mounting apparatus is provided. (Note 2) The wafer mounting apparatus as described in Appendix 1, wherein the protruding portion is provided so as to be N times symmetric with respect to a central point centered on the center of the lower surface. (Note 3) The aforementioned protrusion is provided in the shape of an impeller, as described in Appendix 2, for the wafer mounting apparatus. (Note 4) The wafer mounting apparatus according to any one of the appendices 1 to 3, wherein the height of the protrusion is 10 μm or more. (Note 5) The aforementioned protrusion is The first side, Having a second surface opposite to the first surface, A wafer mounting apparatus according to any one of the appendices 1 to 4, wherein the area of ​​the first surface is greater than the area of ​​the second surface. (Note 6) The wafer mounting apparatus described in Appendix 5, wherein the first surface is a curved surface. (Note 7) A wafer mounting device for mounting semiconductor wafers, The upper surface located on the lower side of the semiconductor wafer on which it is mounted, It comprises a lower surface facing the upper surface, A wafer mounting apparatus wherein the surface roughness of the lower surface is greater than the surface roughness of at least one surface other than the lower surface. (Note 8) The wafer mounting apparatus as described in Appendix 7, wherein the surface roughness of the lower surface is 10 μm or more. (Note 9) A semiconductor manufacturing apparatus having a wafer mounting apparatus as described in any one of Appendix 1 to Appendix 8, for forming an epitaxial layer on the surface of the semiconductor wafer, A stage provided at a position opposite to the lower surface of the wafer mounting apparatus, having a mounting section on which the wafer mounting apparatus is mounted, and a nozzle provided in the mounting section from which a rotating gas for rotating the wafer mounting apparatus is ejected, A raw material gas supply unit that supplies raw material gas for epitaxial growth to the semiconductor wafer mounted on the wafer mounting apparatus, A semiconductor manufacturing apparatus comprising a heating unit for heating the semiconductor wafer mounted on the wafer mounting apparatus. (Note 10) The aforementioned mounting section has a spiral groove, as described in Appendix 9, for the semiconductor manufacturing apparatus. (Note 11) The wafer mounting apparatus and the stage are made of carbon. The semiconductor manufacturing apparatus according to Appendix 9 or Appendix 10, wherein the rotating gas is composed of argon. (Note 12) A method for manufacturing a semiconductor device in which the epitaxial layer is formed on the surface of a semiconductor wafer using a semiconductor manufacturing apparatus described in any one of the items from Appendix 9 to Appendix 11, A mounting step of mounting the semiconductor wafer onto the wafer mounting apparatus, A supply step of supplying the raw material gas to the surface of the semiconductor wafer mounted on the wafer mounting apparatus by the raw material gas supply unit, A heating step in which the semiconductor wafer mounted on the wafer mounting apparatus is heated by the heating unit, A method for manufacturing a semiconductor device, comprising: a rotation step of rotating the wafer mounting device on which the semiconductor wafer is mounted by blowing the rotating gas ejected from the nozzle of the stage onto the lower surface of the wafer mounting device. [Explanation of symbols]

[0110] 1 Semiconductor wafer, 10 Semiconductor device, 12 Epitaxial layer, 100 Semiconductor manufacturing equipment, 120 Stage, 128 Groove, 130 130a 130b 130c Wafer mounting equipment, 131 Top surface, 132 Bottom surface, 136 Protrusion, 137 First surface, 138 Second surface, 140 Raw material gas supply unit, 160 Heating unit, G1 Raw material gas, G2 Rotation gas

Claims

1. A wafer mounting device on which semiconductor wafers are mounted, The upper surface located on the lower side of the semiconductor wafer on which it is mounted, It comprises a lower surface facing the upper surface, The lower surface has a protruding portion that extends from the lower surface, wherein the wafer mounting apparatus is provided.

2. The wafer mounting apparatus according to claim 1, wherein the protruding portion is provided so as to be N times symmetric with respect to a central point centered on the center of the lower surface.

3. The wafer mounting apparatus according to claim 2, wherein the protrusion is provided in the shape of an impeller.

4. The wafer mounting apparatus according to claim 1, wherein the height of the protruding portion is 10 μm or more.

5. The aforementioned protrusion is The first side, Having a second surface opposite to the first surface, The wafer mounting apparatus according to claim 1, wherein the area of ​​the first surface is larger than the area of ​​the second surface.

6. The wafer mounting apparatus according to claim 5, wherein the first surface is a curved surface.

7. A wafer mounting device for mounting semiconductor wafers, The upper surface located on the lower side of the semiconductor wafer on which it is mounted, It comprises a lower surface facing the upper surface, A wafer mounting apparatus wherein the surface roughness of the lower surface is greater than the surface roughness of at least one surface other than the lower surface.

8. The wafer mounting apparatus according to claim 7, wherein the surface roughness of the lower surface is 10 μm or more.

9. A semiconductor manufacturing apparatus having a wafer mounting apparatus according to any one of claims 1 to 8, for forming an epitaxial layer on the surface of the semiconductor wafer, A stage provided at a position opposite to the lower surface of the wafer mounting apparatus, having a mounting section on which the wafer mounting apparatus is mounted, and a nozzle provided in the mounting section from which a rotating gas for rotating the wafer mounting apparatus is ejected, A raw material gas supply unit that supplies raw material gas for epitaxial growth to the semiconductor wafer mounted on the wafer mounting apparatus, A semiconductor manufacturing apparatus comprising a heating unit for heating the semiconductor wafer mounted on the wafer mounting apparatus.

10. The semiconductor manufacturing apparatus according to claim 9, wherein the mounting portion has a helical groove.

11. The wafer mounting apparatus and the stage are made of carbon. The semiconductor manufacturing apparatus according to claim 9, wherein the rotating gas is composed of argon.

12. A method for manufacturing a semiconductor device in which the epitaxial layer is formed on the surface of a semiconductor wafer using the semiconductor manufacturing apparatus described in claim 9, A mounting step of mounting the semiconductor wafer onto the wafer mounting apparatus, A supply step of supplying the raw material gas to the surface of the semiconductor wafer mounted on the wafer mounting apparatus by the raw material gas supply unit, A heating step in which the semiconductor wafer mounted on the wafer mounting apparatus is heated by the heating unit, A method for manufacturing a semiconductor device, comprising: a rotation step of rotating the wafer mounting device on which the semiconductor wafer is mounted by blowing the rotating gas ejected from the nozzle of the stage onto the lower surface of the wafer mounting device.

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