High-frequency module

Abstract

To provide a high-frequency module in which the connection between the shield conductor connected to the shield layer and the substrate is strengthened. [Solution] The high-frequency module 1 comprises a module substrate 81 having a main surface 811 located at one end in the thickness direction Z and a main surface 812 located at the opposite end of the main surface 811 in the thickness direction Z; 10 and 6R located on the main surface 811; a shield layer 83 located on the main surface 811 such that it overlaps with at least a part of the module substrate 81 when viewed along the thickness direction Z; and a shield conductor 91 located between 10 and 6R when viewed along the thickness direction Z, extending along the thickness direction Z and having one end connected to the shield layer 83. The module substrate 81 has a housing portion 85 extending from the main surface 811 toward the main surface 812 along the thickness direction Z, and a part of the shield conductor 91 is located in the housing portion 85.

Description

Technical Field

[0001] The present disclosure relates to a high-frequency module.

Background Art

[0002] Patent Document 1 discloses a high-frequency module including a shield layer and a shield conductor connected to a substrate. In this high-frequency module, a shield layer is disposed between electronic components arranged on a module substrate to suppress radio wave interference generated between the electronic components.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The high-frequency module of Patent Document 1 has room for improvement in strengthening the connection between the shield conductor and the substrate.

[0005] An object of the present disclosure is to provide a high-frequency module in which the connection between a shield conductor connected to a shield layer and a substrate is strengthened.

Means for Solving the Problems

[0006] The high-frequency module according to the first aspect of the present disclosure is a substrate having a first main surface disposed at one end in the thickness direction and a second main surface disposed at the end opposite to the first main surface in the thickness direction, a first electronic component and a second electronic component disposed on the first main surface, a shield layer disposed on the first main surface so as to overlap at least a part of the substrate when viewed along the thickness direction, A shield conductor is positioned between the first electronic component and the second electronic component when viewed along the thickness direction, extending along the thickness direction and having one end connected to the shield layer. Equipped with, The substrate has a housing portion that extends along the thickness direction from the first main surface toward the second main surface, A portion of the shield conductor is arranged in the housing. [Effects of the Invention]

[0007] According to this disclosure, a high-frequency module can be provided in which the connection between the shield conductor connected to the shield layer and the substrate is enhanced. [Brief explanation of the drawing]

[0008] [Figure 1] A circuit diagram showing a communication device equipped with a high-frequency module according to a first embodiment of the present disclosure. [Figure 2] A plan view showing the high-frequency module in Figure 1. [Figure 3] Cross-sectional view along line II in Figure 2. [Figure 4] A cross-sectional view showing a high-frequency module of a second embodiment of the present disclosure. [Figure 5] A first plan view showing a high-frequency module of a third embodiment of the present disclosure. [Figure 6] A second plan view showing the high-frequency module in Figure 5. [Figure 7] A cross-sectional view along line II-II in Figure 5. [Modes for carrying out the invention]

[0009] Various aspects of this disclosure will be described below.

[0010] A high-frequency module according to a first aspect of this disclosure is A substrate having a first main surface located at one end in the thickness direction and a second main surface located at the end opposite to the first main surface in the thickness direction, The first electronic component and the second electronic component disposed on the first main surface, A shield layer disposed on the first main surface so as to overlap at least a part of the substrate when viewed along the thickness direction, A shield conductor disposed between the first electronic component and the second electronic component when viewed along the thickness direction, extending along the thickness direction and having one end connected to the shield layer and comprising The substrate has a housing portion extending from the first main surface toward the second main surface along the thickness direction, A part of the shield conductor is disposed in the housing portion.

[0011] The high-frequency module according to the second aspect of the present disclosure is the high-frequency module according to the first aspect, comprising a first resin member covering the first main surface, the first electronic component, the second electronic component, and the shield conductor, The shield layer is provided on the surface of the first resin member.

[0012] The high-frequency module according to the third aspect of the present disclosure is the high-frequency module according to the first aspect, comprising a ground layer disposed inside the substrate, The shield conductor is connected to the ground layer in the housing portion.

[0013] The high-frequency module according to the fourth aspect of the present disclosure is the high-frequency module according to any one of the first to third aspects, The substrate has a transmission signal line and a reception signal line disposed inside thereof, A part of the shield conductor is disposed between the transmission signal line and the reception signal line.

[0014] The high-frequency module according to the fifth aspect of the present disclosure is the high-frequency module according to any one of the first to third aspects, The housing portion extends from the first main surface to the second main surface, The shield conductor penetrates the substrate in the thickness direction.

[0015] The high-frequency module of the sixth aspect of this disclosure is a high-frequency module of any of the first to third aspects, The circuit board includes signal lines arranged inside the board, When viewed along the thickness direction, at least a portion of the shield conductor and the signal line overlap.

[0016] The LC filter of the seventh aspect of this disclosure is used in the high-frequency module of the fifth aspect, A second resin member arranged on the second main surface, External connection terminals arranged on the second resin member, Equipped with, The shield conductor is connected to the external connection terminal.

[0017] Various aspects of this disclosure will be described below with reference to the accompanying drawings. The following description is essentially illustrative and does not limit the applications or uses of this disclosure. The accompanying drawings are schematic, and the dimensional proportions and other aspects of the illustrated configuration may differ from those of the actual product.

[0018] (First embodiment) A high-frequency module 1 according to the first embodiment of this disclosure will be described with reference to Figure 1.

[0019] The communication device 5 is a device used in a communication system, such as a mobile terminal like a smartphone. As shown in Figure 1, the communication device 5 comprises a high-frequency module 1, an antenna 2, a high-frequency signal processing circuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4.

[0020] As shown in Figure 2, the high-frequency module 1 comprises a module substrate 81, a first electronic component, a second electronic component, a shielding layer 83, and a shielding conductor 91. In this embodiment, the high-frequency module 1 is positioned between the antenna 2 and the RFIC 3 and configured to transmit high-frequency signals. The circuit configuration of the high-frequency module 1 will be described later.

[0021] Antenna 2 is configured to transmit high-frequency signals output from high-frequency module 1 and to receive high-frequency signals output from an external source and input them to high-frequency module 1.

[0022] RFIC3 has a control unit (not shown) that controls the power amplifier 10 and low-noise amplifier 20 of the high-frequency module 1, which will be described later, and is configured to process high-frequency signals transmitted and received by antenna 2. In this embodiment, RFIC3 processes the high-frequency received signal input via the receiving path of high-frequency module 1 by down-conversion or the like, and outputs the received signal generated by the signal processing to BBIC4. RFIC3 also processes the transmitted signal input from BBIC4 by up-conversion or the like, and outputs the transmitted signal generated by the signal processing to antenna 2. Some or all of the control unit functions of RFIC3 may be implemented outside of RFIC3, for example, in BBIC4 or high-frequency module 1.

[0023] BBIC4 is a baseband signal processing circuit configured to process signals using an intermediate frequency band lower than the high-frequency signal transmitted by the high-frequency module 1. BBIC4 processes, for example, image signals for image display.

[0024] Referring to Figure 1, an example of the circuit configuration of the high-frequency module 1 will be described. The high-frequency module 1 in this embodiment includes a power amplifier 10, a PA control circuit (PAC) 11, a low-noise amplifier 20, a duplexer 6, an antenna connection terminal 100, a high-frequency input terminal 110, a control input terminal 111, and a high-frequency output terminal 120. As shown in Figure 2, the power amplifier 10, the PA control circuit 11, the low-noise amplifier 20, and the duplexer 6 are arranged on the main surface 811 of the module board 81. The duplexer 6 includes a transmit filter 6T and a receive filter 6R. The module board 81 is an example of a board, the power amplifier 10 is an example of a first electronic component, and the receive filter 6R is an example of a second electronic component.

[0025] The antenna connection terminal 100 is configured to receive high-frequency signals output from antenna 2 and to output high-frequency signals to antenna 2.

[0026] The high-frequency input terminal 110 is configured to receive the transmission signal for communication band A from the RFIC3.

[0027] The control input terminal 111 is configured to receive digital signals from the RFIC that control the gain of the power amplifier 10, as well as the power supply voltage and bias voltage supplied to the power amplifier 10.

[0028] The high-frequency output terminal 120 is configured to output a high-frequency received signal to the outside of the high-frequency module 1. In this embodiment, the high-frequency output terminal 120 is configured to output a received signal of communication band A to the RFIC 3.

[0029] The power amplifier 10 is configured to amplify the transmission signal in communication band A. In this embodiment, the input terminal of the power amplifier 10 is connected to the high-frequency input terminal 110, and the output terminal of the power amplifier 10 is connected to the transmission filter 6T.

[0030] The PA control circuit 11 is configured to control the power amplifier 10. The PA control circuit 11 controls the power amplifier 10 based on a digital signal input to the control input terminal 111. In this embodiment, the PA control circuit 11 is, for example, a semiconductor integrated circuit, but is not limited thereto.

[0031] The low-noise amplifier 20 is configured to amplify the received signal of communication band A input to the antenna connection terminal 100. In this embodiment, the input terminal of the low-noise amplifier 20 is connected to the receiving filter 6R, and the output terminal of the low-noise amplifier 20 is connected to the high-frequency output terminal 120.

[0032] The duplexer 6 is configured to transmit the received and transmitted signals of communication band A, which are input and output at the antenna connection terminal 100, using the FDD (Frequency Division Duplex) method.

[0033] The transmit filter 6T is a filter that has the transmit band of communication band A as its passband. The input terminal of the transmit filter 6T is connected to the power amplifier 10, and the output terminal is connected to the antenna connection terminal 100.

[0034] The receiving filter 6R is a filter that has the receiving band of communication band A as its passband. The input terminal of the receiving filter 6R is connected to the antenna connection terminal 100, and the output terminal is connected to the low-noise amplifier 20.

[0035] The transmit filter 6T and receive filter 6R are, for example, elastic wave filters or LC resonant filters, but are not limited to these.

[0036] The high-frequency module 1 may include a matching circuit placed between the transmitting filter 6T and the power amplifier 10. This configuration allows for impedance matching between the transmitting filter 6T and the power amplifier 10. Alternatively, it may include a matching circuit placed between the receiving filter 6R and the low-noise amplifier 20. This configuration allows for impedance matching between the receiving filter 6R and the low-noise amplifier 20.

[0037] In this embodiment, the high-frequency module 1 is configured to transmit and receive high-frequency signals in communication band A, but it may also be configured to transmit and receive high-frequency signals in communication band B, which is different from communication band A. In this case, the high-frequency module 1 may include a duplexer that transmits the received and transmitted signals of communication band B using an FDD (Flash Decoder) method.

[0038] Communication bands A and B are not limited to communication bands for FDD; for example, one or both of communication bands A and B may be communication bands for TDD (Time Division Duplex).

[0039] Next, an example of the component layout of the high-frequency module 1 will be explained using Figures 2 and 3.

[0040] Figure 2 is a plan view of the high-frequency module 1, showing an example of component arrangement when the main surface 811 of the module substrate 81 is viewed from the thickness direction. Figure 3 is a cross-sectional view of the high-frequency module 1, showing a cross-section along line II in Figure 2. In this embodiment, the thickness direction is the direction intersecting the main surface 811 and main surface 812 of the module substrate 81 (for example, the Z direction in Figure 3).

[0041] The power amplifier 10 is located near one of the two ends of the module board 81 in the X direction (for example, the left end in Figure 2). The PA control circuit 11 is located in approximately the same position as the power amplifier 10 in the X direction and is spaced apart from the power amplifier 10 in the Y direction. The low-noise amplifier 20 is located near the other end of the module board 81 in the X direction (for example, the right end in Figure 2) and is located in approximately the same position as the power amplifier 10 in the Y direction.

[0042] The receiving filter 6R is located between the power amplifier 10 and the low-noise amplifier 20 in the X direction of the module board 81, and is located in approximately the same position as the power amplifier 10 and the low-noise amplifier 20 in the Y direction. The transmitting filter 6T is located in approximately the same position as the receiving filter 6R in the X direction, and is spaced apart from the receiving filter 6R in the Y direction.

[0043] As shown in Figure 3, the module substrate 81 has a main surface 811 located at one end in the thickness direction Z, a main surface 812 located at the opposite end in the thickness direction from the main surface 811, a ground layer 84, a housing portion 85, and signal lines 86. The module substrate 81 has a rectangular shape when viewed along the thickness direction Z, with the X direction being the longitudinal direction and the Y direction being the short direction, but is not limited to this. As the module substrate 81, low-temperature co-fired ceramic substrates, high-temperature co-fired ceramic substrates, printed circuit boards, etc., can be used, but is not limited to these.

[0044] Main surface 811 is an example of a first main surface, and main surface 812 is an example of a second main surface. As described above, multiple electronic components (i.e., power amplifier 10, PA control circuit 11, low-noise amplifier 20, transmit filter 6T, and receive filter 6R) are arranged on main surface 811. In this embodiment, the power amplifier 10 and the PA control circuit 11 are arranged side by side along the Y direction with space between them.

[0045] The housing section 85 extends along the thickness direction Z of the module substrate 81 from the main surface 811 toward the main surface 812. In this embodiment, as shown in Figure 2, the module substrate 81 has a plurality of housing sections 85 (for example, three housing sections 85) that are spaced apart (for example, equally spaced) in the Y direction. Each housing section 85 is located between the power amplifier 10 and the receiving filter 6R and between the PA control circuit 11 and the transmitting filter 6T in the X direction. Each housing section 85 has an opening in the main surface 811 and is composed of a cylindrical recess capable of accommodating a portion of the shield conductor 91. The bottom of the housing section 85 is located between the main surface 811 and the main surface 812 in the thickness direction Z. The shape of the housing section 85 is not limited to a substantially cylindrical shape, and any shape capable of accommodating a portion of the shield conductor 91 can be adopted. The sides and bottom of the housing section 85 may be plated with metal. This configuration can strengthen the electrical connection between the shield conductor 91 and the housing section 85.

[0046] The resin member 82 is an example of a first resin member and is placed on the main surface 811. The resin member 82 covers the main surface 811, the plurality of electronic components placed on the main surface 811, and the shield conductor 91. This improves the mounting reliability of the components placed on the main surface 811 and covered by the resin member 82. The resin member 82 only needs to cover at least the sides of the plurality of electronic components, and does not need to cover the top surfaces of the plurality of electronic components.

[0047] As shown in Figure 3, the shield layer 83 is positioned on the main surface 811 such that it overlaps with at least a portion of the main surface 811 when viewed along the thickness direction Z of the module substrate 81. In this embodiment, the shield layer 83 includes, for example, a conductive material and is provided on the surface of the resin member 82. In a cross-section along line II, the shield layer 83 covers the X-direction surface of the module substrate 81 and the entire surface of the main surface 811, but is not limited to this. For example, in a cross-section along line II, the shield layer 83 may be provided so as to cover only a portion of the plurality of electronic components and the shield conductor 91 arranged on the main surface 811.

[0048] The shield conductor 91 is located on the main surface 811 and extends along the thickness direction Z. When viewed along the thickness direction Z of the module substrate 81, the shield conductor 91 is located between the power amplifier 10 and the receiving filter 6R, which are located on the main surface 811. A portion of the shield conductor 91 is located in the housing section 85. In this embodiment, the high-frequency module 1 comprises the same number of shield conductors 91 as the housing section 85 (for example, three shield conductors 91), with one shield conductor 91 located in one housing section 85, but is not limited to this. The high-frequency module 1 only needs to have at least one shield conductor 91. Each shield conductor 91 includes, for example, a conductive material. One end of each shield conductor 91 in the Z direction is located in the housing section 85, and the other end of the shield conductor 91 in the Z direction is connected to the shield layer 83. Since the shield conductor 91 is positioned between the power amplifier 10 and the receiving filter 6R, the current generated in the shield layer 83 due to the power amplifier 10 and the receiving filter 6R flows to the module substrate 81 side through the shield conductor 91, preventing the power amplifier 10 and the receiving filter 6R from electromagnetically coupling. As a result, degradation of the quality of the transmitted signal and deterioration of the receiving sensitivity can be suppressed.

[0049] In this embodiment, the shield conductor 91 has a cylindrical shape, but is not limited thereto. For example, the shield conductor 91 may have a rectangular parallelepiped shape.

[0050] In this embodiment, the first electronic component is a power amplifier 10 and the second electronic component is a receiving filter 6R, but it is not limited to these. The first and second electronic components may be any two of the electronic components arranged on the main surface 811. For example, the first electronic component may be a filter that has communication band A as its passband, and the second electronic component may be a filter that has communication band B as its passband.

[0051] A portion of the shield conductor 91 is located inside the housing 85. This configuration strengthens the connection between the shield conductor 91 and the module board 81.

[0052] As shown in Figure 3, the ground layer 84 is located inside the module substrate 81 and is set to ground potential. In this embodiment, the ground layer 84 is composed of a highly conductive material, such as metal, and includes a first portion 841 located around the housing portion 85 and connected to the shield conductor 91, a second portion 842 connected to the power amplifier 10, a third portion 843 connected to the receiving filter 6R, and a fourth portion 844 exposed on the main surface 812. The second portion 842, the third portion 843, and the fourth portion 844 are each connected to the first portion 841. As an example, the second portion 842 and the power amplifier 10 are directly connected to the third portion 843 and the receiving filter 6R. Conductor vias 87 are connected to the fourth portion 844, extending from the fourth portion 844 along the Z direction to the main surface 812.

[0053] Since the shield conductor 91 is connected to the ground layer 84 in the housing section, the ground of the shield conductor 91 is strengthened, and electromagnetic field coupling between the power amplifier 10 and the receiving filter 6R can be further suppressed.

[0054] The signal line 86 is an example of a signal line, and is located inside the module board 81, with its entirety overlapping the shield conductor 91 when viewed from the thickness direction Z of the module board 81. In this embodiment, the signal line 86 is connected to the power amplifier 10 and the transmit filter 6T. The signal line 86 may also be a wiring that transmits a digital signal. With this configuration, in the high-frequency module 1 of this embodiment, the connection between the shield conductor 91 and the module board 81 is strengthened, and the signal line 86 can be positioned to overlap the shield conductor, thereby efficiently utilizing the space inside the module board 81. The signal line 86 is not limited to overlapping the entire shield conductor 91; it is sufficient if at least a part of the signal line 86 overlaps the shield conductor 91.

[0055] The high-frequency module 1 does not necessarily have to include the resin member 82. In other words, the resin member 82 can be omitted.

[0056] The module board 81 does not necessarily have a ground layer 84. In other words, the ground layer 84 can be omitted.

[0057] The module board 81 does not necessarily have to have signal lines 86. In other words, signal lines 86 can be omitted.

[0058] (Second embodiment) A high-frequency module 1A according to the second embodiment of this disclosure will be described with reference to Figure 4.

[0059] As shown in Figure 4, the high-frequency module 1A of the second embodiment differs from the high-frequency module 1 of the first embodiment in that the module substrate 81 is provided with signal lines 88 and 89, the housing portion 85 extends to the main surface 812, and the shield conductor 91 penetrates the module substrate 81 in the thickness direction Z.

[0060] Signal line 88 is an example of a transmission signal line and is a wire that transmits the transmission signal. In Figure 4, signal line 88 is connected to the power amplifier 10, but it is not limited to this and may be connected to, for example, the transmission filter 6T. Signal line 88 is located inside the module board 81.

[0061] The signal line 89 is an example of a received signal line and is a wire that transmits the received signal. In this modified example, the signal line 89 is located inside the module board 81 and connected to the received filter 6R and the low-noise amplifier 20, but it is not limited to this. For example, the signal line 89 may be connected to only one of the received filter 6R and the low-noise amplifier 20.

[0062] In this embodiment, the shield conductor 91 is positioned between signal line 88 and signal line 89. This configuration prevents the transmitted signal flowing through signal line 88 and the received signal flowing through signal line 89 from interfering with each other, thereby suppressing a decrease in the quality of the transmitted signal and a deterioration in the receiving sensitivity.

[0063] In this embodiment, the housing portion 85 extends from the main surface 811 to the main surface 812, and the shield conductor 91 penetrates the module substrate 81 in the thickness direction Z. This configuration further strengthens the connection between the shield conductor 91 and the module substrate 81. In this embodiment, of the two ends of the shield conductor 91 in the Z direction, the end located inside the housing portion 85 is located on the same plane as the main surface 812.

[0064] (Third embodiment) The high-frequency module 1B according to the third embodiment of this disclosure will be described with reference to Figures 5 to 7.

[0065] The high-frequency module 1B of the third embodiment differs from the high-frequency module 1 of the second embodiment in that, as shown in Figures 5 to 7, it comprises resin members 821 and 822, an external connection terminal 92, and a plurality of external connection terminals 93. Hereafter, parts identical to those of the second embodiment will be given the same reference numerals and their descriptions will be omitted.

[0066] The resin member 821 is an example of a first resin member and is placed on the main surface 811. The resin member 821 covers the main surface 811, the plurality of electronic components placed on the main surface 811, and the shield conductor 91. This improves the mounting reliability of the components placed on the main surface 811 and covered by the resin member 821. The resin member 821 only needs to cover at least the sides of the plurality of electronic components, and does not need to cover the top surfaces of the plurality of electronic components.

[0067] The resin member 822 is an example of a second resin member and is placed on the main surface 812. The resin member 822 covers the main surface 812, the plurality of electronic components placed on the main surface 812, and the shield conductor 91. This improves the mounting reliability of the components placed on the main surface 812 and covered by the resin member 822. The resin member 822 only needs to cover at least the sides of the plurality of electronic components, and does not need to cover the top surfaces of the plurality of electronic components.

[0068] In this embodiment, as shown in Figures 5 and 6, the power amplifier 10, the transmit filter 6T, and the receive filter 6R are arranged on the main surface 811, while the PA control circuit 11 and the low-noise amplifier 20 are arranged on the main surface 812. This configuration makes it possible to reduce the area of ​​the high-frequency module 1B when viewed along the Z direction. Furthermore, the combination of components arranged on the main surface 811 and the main surface 812 is not limited to the above-described pattern; for example, the PA control circuit 11 may be arranged on the main surface 811.

[0069] As shown in Figure 7, the external connection terminal 92 is located on the resin member 822. In this embodiment, the shield conductor 91 penetrates the module substrate 81 in the Z direction, and both ends of the shield conductor 91 in the Z direction are located outside the housing portion 85. The external connection terminal 92 is provided at one of the ends of the shield conductor 91 in the Z direction that is closer to the main surface 812 than to the main surface 811. This configuration strengthens the connection between the shield layer 83 and the external connection terminal 92, preventing electromagnetic field coupling between the first electronic component (e.g., power amplifier 10, PA control circuit 11) and the second electronic component (e.g., receiving filter 6R, low-noise amplifier 20), in other words, between electronic components that are positioned with the shield conductor 91 in between on the main surface 811, and between electronic components that are positioned with the shield conductor 91 in between on the main surface 812. As a result, it is possible to suppress a decrease in the quality of the transmitted signal and a deterioration in the receiving sensitivity.

[0070] As shown in Figure 6, the multiple external connection terminals 93 are arranged on the resin member 822 and include, in addition to the antenna connection terminal 100, high-frequency input terminal 110, control input terminal 111, and high-frequency output terminal 120 shown in Figure 1, a ground terminal (not shown) connected to the ground layer 84. The high-frequency module 1B has multiple post electrodes (not shown) arranged on the main surface 812 and extending along the thickness direction Z, and the multiple post electrodes are connected to wiring arranged inside the module substrate 81. Each of the multiple external connection terminals 93 is connected to wiring arranged inside the module substrate 81 via a post electrode.

[0071] The high-frequency module 1B does not necessarily have to be equipped with external connection terminals 92 and 93, and a portion of the shield conductor 91 may be exposed from the resin member 822.

[0072] The high-frequency module 1B does not necessarily have multiple external connection terminals 93, and a portion of the post electrode corresponding to each of the multiple external connection terminals 93, including the antenna connection terminal 100, high-frequency input terminal 110, control input terminal 111, and high-frequency output terminal 120, may be exposed from the resin member 822.

[0073] In this disclosure, "A is located between B and C" means that at least one of the line segments connecting any point in B and any point in C passes through A.

[0074] The embodiments and variations of this disclosure can be combined with each other, or with each other, or with each other. Features included in the embodiments and variations of this disclosure can also be combined with each other.

[0075] The details of the disclosure are subject to change, and variations in the combination and order of elements in each embodiment can be achieved without departing from the requested scope and spirit of the disclosure. [Explanation of symbols]

[0076] 1, 1A, 1B High-Frequency Modules 2 antennas 3. High-frequency signal processing circuit 4. Baseband signal processing circuit 5. Communication equipment 6 Duplexa 6T Transmit Filter 6R receiving filter 81 Module board 811, 812 Main surface 82, 821, 822 Resin components 83 Shield Layer 84 Ground Layer 841, 842, 843, 844 parts 85 Storage Unit 86, 88, 89 signal lines 87 Conductor via 91 Shield conductor 92, 93 External connection terminals 10 Power Amplifier 11PA control circuit 20 Low-noise amplifier 100 Antenna connection terminal 110 High-frequency input terminal 111 Control Input Terminal 120 High-Frequency Output Terminals

Claims

1. A substrate having a first main surface located at one end in the thickness direction and a second main surface located at the end opposite to the first main surface in the thickness direction, The first electronic component and the second electronic component arranged on the first main surface, When viewed along the thickness direction, a shield layer is disposed on the first main surface such that it overlaps with at least a portion of the substrate, A shield conductor is positioned between the first electronic component and the second electronic component when viewed along the thickness direction, extending along the thickness direction and having one end connected to the shield layer. Equipped with, The substrate has a housing portion that extends along the thickness direction from the first main surface toward the second main surface, A portion of the shield conductor is arranged in the housing. High-frequency module.

2. The device comprises a first resin member that covers the first main surface, the first electronic component, the second electronic component, and the shield conductor, The shield layer is provided on the surface of the first resin member. The high-frequency module according to claim 1.

3. The substrate comprises a ground layer disposed inside the substrate, The shield conductor is connected to the ground layer in the housing. The high-frequency module according to claim 1.

4. The aforementioned substrate has transmit signal lines and receive signal lines arranged inside it. A portion of the shield conductor is positioned between the transmit signal line and the receive signal line. A high-frequency module according to any one of claims 1 to 3.

5. The housing portion extends from the first main surface to the second main surface, The shield conductor penetrates the substrate in the thickness direction. A high-frequency module according to any one of claims 1 to 3.

6. The circuit board includes signal lines arranged inside the board, When viewed along the thickness direction, at least a portion of the shield conductor and the signal line overlap. A high-frequency module according to any one of claims 1 to 3.

7. A second resin member arranged on the second main surface, An external connection terminal arranged on the second resin member, Equipped with, The shield conductor is connected to the external connection terminal. The high-frequency module according to claim 5.

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