Multilayer electronic components

Abstract

This invention provides a multilayer electronic component that offers excellent reliability in high-voltage environments, moisture resistance, and mountability, while also preventing the occurrence of arc phenomena. [Solution] The laminated electronic component includes a capacitance forming section including a dielectric layer 111 and internal electrode layers 121, 122 and a floating electrode layer 123 arranged alternately in the thickness direction with the dielectric layer in between; a main body 110 including cover sections 112, 113 arranged at the upper and lower parts of the capacitance forming section in the thickness direction; external electrodes 131, 132 including connecting sections 131-1, 132-1 arranged on the plane of the main body in the length direction X, and band sections 131-2, 132-2 arranged extending from the connecting sections to a part of the plane in the thickness direction; and an insulating layer 151 containing silicon (Si) arranged on the main body and the external electrodes, wherein the ratio of the average thickness (tc) of the cover section to the length (BL) between the band sections (tc / BL) satisfies 0.036 ≤ tc / BL ≤ 1.5.

Description

[Technical Field]

[0001] This invention relates to a stacked electronic component. [Background technology]

[0002] A multilayer ceramic capacitor (MLCC), a type of multilayer electronic component, is a chip-type capacitor that is mounted on the printed circuit boards of various electronic products such as liquid crystal displays (LCDs), plasma display panels (PDPs), computers, smartphones, and mobile phones, and plays the role of charging or discharging electricity.

[0003] Such multilayer ceramic capacitors can be used as components in various electronic devices due to their advantages of being small, yet guaranteeing high capacitance, and being easy to implement. As various electronic devices such as computers and mobile devices become smaller and more powerful, the demand for smaller and higher-capacitance multilayer ceramic capacitors is increasing.

[0004] Recently, demand for multilayer ceramic capacitors for automotive electronics has increased, and their application to high-voltage applications is becoming more common. However, in the case of high-voltage products with relatively high rated voltages, there is a risk of arc formation between the terminals of the external electrodes due to the high voltage applied to both ends, which presents technical challenges.

[0005] This type of arc refers to an arc discharge phenomenon that occurs when a high voltage is applied to the positive electrode of a conductive external electrode of a component. The strong electric field generated by the formation of different potentials between the electrodes causes insulation failure, leading to current leakage and carbonization of surrounding materials. In particular, the risk of arc formation between the two terminals of the external electrode increases even further when an extremely high voltage is applied.

[0006] Arcs alter the electrical properties of a product, such as reducing its capacitance and insulation resistance (IR), leaving visible damage and accelerating cracking and failure. Therefore, proper design is necessary to prevent arcs from forming, as this allows for control of the insulating layer and the flow of surface current through the electrodes. [Prior art documents] [Patent Documents]

[0007] [Patent Document 1] Korean Published Patent Gazette No. 10-2013-0023612 [Overview of the project] [Problems that the invention aims to solve]

[0008] One of the problems that this invention aims to solve is to provide a stacked electronic component that is highly reliable in high-voltage environments.

[0009] One of the problems that this invention aims to solve is to provide a multilayer electronic component with excellent moisture resistance reliability.

[0010] One of the problems that this invention aims to solve is to provide a stacked electronic component with excellent mountability.

[0011] One of the problems that this invention aims to solve is to provide a multilayer electronic component that can prevent the occurrence of arc phenomena.

[0012] However, some of the problems that the present invention aims to solve are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Means for solving the problem]

[0013] A stacked electronic component according to one embodiment of the present invention includes a capacitance forming section including a dielectric layer and internal electrode layers and floating electrode layers arranged alternately in the thickness direction with the dielectric layer in between, a cover section disposed at the upper and lower parts of the capacitance forming section in the thickness direction, a body including a first surface and a second surface facing each other in the thickness direction, a third surface and a fourth surface connected to the first surface and the second surface and facing each other in the length direction, a fifth surface and a sixth surface connected to the first surface, the second surface, the third surface and the fourth surface and facing each other in the width direction, and a third surface disposed on the third surface The device includes a first external electrode comprising a connection portion and a first band portion extending from the first connection portion to a part of the first and second surfaces; a second external electrode comprising a second connection portion located on the fourth surface and a second band portion extending from the second connection portion to a part of the first and second surfaces; and an insulating layer containing silicon (Si) located on the main body, wherein the ratio (tc / BL) of the average thickness (tc) of the cover portion to the length (BL) between the first and second band portions satisfies 0.036 ≤ tc / BL ≤ 1.5.

[0014] A stacked electronic component according to another embodiment of the present invention includes a capacitance forming section including a dielectric layer and internal electrode layers and floating electrode layers arranged alternately in the thickness direction with the dielectric layer in between, a cover section disposed at the upper and lower parts of the capacitance forming section in the thickness direction, a body including first and second surfaces facing each other in the thickness direction, third and fourth surfaces connected to the first and second surfaces and facing each other in the length direction, fifth and sixth surfaces connected to the first, second, third and fourth surfaces and facing each other in the width direction, and a first connecting section disposed on the third surface, and A laminated electronic component comprising: a first external electrode including a first band portion that extends from the first connection portion to a part of the first and second surfaces; a second external electrode including a second connection portion that is arranged on the fourth surface and a second band portion that extends from the second connection portion to a part of the first and second surfaces; and an insulating layer containing silicon (Si) arranged on the main body, wherein the ratio (AV / BL) of the voltage applied to the laminated electronic component to the length (BL) between the first and second band portions satisfies 0.5 ≤ AV / BL ≤ 1.2. [Effects of the Invention]

[0015] One of the several effects of the present invention is to improve the reliability of multilayer electronic components in high-voltage environments.

[0016] One of the several effects of the present invention is to improve the moisture resistance reliability of multilayer electronic components.

[0017] One of the several effects of the present invention is to improve the mountability of stacked electronic components.

[0018] One of the several effects of the present invention is to suppress the occurrence of arc phenomena in multilayer electronic components.

[0019] However, the diverse yet beneficial advantages and effects of the present invention are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Brief explanation of the drawing]

[0020] [Figure 1] Schematically shows a perspective view of a stacked electronic component according to an embodiment of the present invention. [Figure 2] Schematically shows a cross-sectional view taken along the line I-I' of FIG. 1. [Figure 3] Schematically shows a cross-sectional view taken along the line II-II' of FIG. 1. [Figure 4] (a) and (b) schematically show cross-sectional views of the internal electrode layer and the floating electrode layer of the present invention.

Mode for Carrying Out the Invention

[0021] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Also, the embodiments of the present invention are provided to more fully explain the present invention to ordinary technicians. Therefore, the shape and size of elements in the drawings can be exaggerated for clearer explanation, and elements denoted by the same reference numerals in the drawings are the same elements.

[0022] And, in order to clearly explain the present invention in the drawings, parts not related to the explanation are omitted, and the sizes and dimensions of each configuration shown in the drawings are arbitrarily shown for convenience of explanation, so the present invention is not necessarily limited to what is shown in the drawings. Note that components having the same function within the scope of the same idea are described using the same reference numerals. Furthermore, throughout the specification, when a certain part says that a certain component "includes", this means that other components can be further included, rather than excluding other components, unless otherwise stated.

[0023] In the drawings, the Z direction can be defined as the thickness direction or the first direction, the X direction can be defined as the length direction or the second direction, and the Y direction can be defined as the width direction or the third direction. And the stacking direction may be the thickness direction or the width direction.

[0024] In this invention, thickness may mean the size in the thickness direction or the size in the first direction, length may mean the size in the length direction or the size in the second direction, and width may mean the size in the width direction or the size in the third direction. However, it is not limited to these, and thickness may also mean the perpendicular distance from a reference point or reference plane to another reference point or reference plane.

[0025] Multilayer electronic components Figure 1 schematically shows a perspective view of a stacked electronic component according to one embodiment of the present invention, Figure 2 schematically shows a cross-sectional view along the line I-I' in Figure 1, Figure 3 schematically shows a cross-sectional view along the line II-II' in Figure 1, and Figures 4(a) and (b) schematically show cross-sectional views of the internal electrode layer and floating electrode layer of the present invention.

[0026] Hereinafter, with reference to Figures 1 to 4(b), a multilayer electronic component according to one embodiment of the present invention will be described in detail. However, although a multilayer ceramic capacitor will be described as an example of a multilayer electronic component, the present invention can also be applied to various electronic products that utilize dielectric compositions, such as inductors, piezoelectric elements, varistors, or thermistors.

[0027] A stacked electronic component 100 according to one embodiment of the present invention includes a capacitance forming section Ac including a dielectric layer 111 and internal electrode layers and floating electrode layers arranged alternately in the thickness direction with the dielectric layer 111 in between, cover sections 112 and 113 arranged on the upper and lower parts of the capacitance forming section Ac in the thickness direction, and a main body 110 including a first surface 1 and a second surface 2 facing each other in the thickness direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and facing each other in the length direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1, the second surface 2, the third surface 3 and the fourth surface 4 and facing each other in the width direction, and a first connecting section 131-1 arranged on the third surface 3, and above The device includes a first external electrode 131 including a first band portion 131-2 that extends from a first connection portion 131-1 to a part of the first surface 1 and the second surface 2, a second external electrode 132 including a second connection portion 132-1 that is located on the fourth surface 4, and a second band portion 132-2 that extends from the second connection portion 132-1 to a part of the first surface 1 and the second surface 2, and an insulating layer 151 containing silicon (Si) located on the main body 110, wherein the ratio (tc / BL) of the average thickness (tc) of the cover portions 112 and 113 to the length (BL) between the first band portion 131-2 and the second band portion 132-2 satisfies 0.036 ≤ tc / BL ≤ 1.5.

[0028] Another embodiment of the present invention, a laminated electronic component 100 includes a capacitance forming section Ac including a dielectric layer 111 and internal electrode layers and floating electrode layers alternately arranged in the thickness direction with the dielectric layer 111 in between, cover sections 112 and 113 arranged on the upper and lower parts of the capacitance forming section Ac in the thickness direction, and a body 110 including a first surface 1 and a second surface 2 facing each other in the thickness direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and facing each other in the length direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1, the second surface 2, the third surface 3 and the fourth surface 4 and facing each other in the width direction, and a first connection section 131-1 arranged on the third surface 3, and the first connection A laminated electronic component 100 includes a first external electrode 131 including a first band portion 131-2 that extends from portion 131-1 to a part of the first surface 1 and the second surface 2, a second external electrode 132 including a second connecting portion 132-1 that is arranged on the fourth surface 4, and a second band portion 132-2 that extends from the second connecting portion 132-1 to a part of the first surface 1 and the second surface 2, and an insulating layer 151 containing silicon (Si) arranged on the main body 110, wherein the ratio (AV / BL) of the voltage applied to the laminated electronic component 100 to the length (BL) between the first band portion 131-2 and the second band portion 132-2 satisfies 0.5 ≤ AV / BL ≤ 1.2.

[0029] The main body 110 may have a dielectric layer 111, an internal electrode layer, and a floating electrode layer stacked alternately.

[0030] More specifically, the main body 110 may include a capacitance forming section Ac which is disposed inside the main body 110 and includes internal electrode layers and floating electrode layers arranged alternately with a dielectric layer 111 in between, thereby forming a capacitance.

[0031] There are no particular restrictions on the specific shape of the main body 110, but as shown in the figure, the main body 110 can be a hexahedron or a similar shape. Due to the shrinkage of the ceramic particles contained in the main body 110 during the firing process, the main body 110 may not be a perfectly straight hexahedron, but it may be substantially hexahedron-shaped.

[0032] The main body 110 can have a first surface 1 and a second surface 2 facing each other in the thickness direction, a third surface 3 and a fourth surface 4 facing each other in the length direction, which are connected to the first surface 1 and the second surface 2, and a fifth surface 5 and a sixth surface 6 facing each other in the width direction, which are connected to the first surface 1, the second surface 2, the third surface 3 and the fourth surface 4.

[0033] The plurality of dielectric layers 111 forming the main body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated so that they are difficult to confirm without using a scanning electron microscope (SEM).

[0034] The raw material for forming the dielectric layer 111 is not limited as long as sufficient capacitance can be obtained. Generally, perovskite (ABO3) - based substances can be used. For example, barium titanate - based substances, lead - composite perovskite - based substances, or strontium titanate - based substances can be used. The barium titanate - based substance can contain BaTiO3 - based ceramic particles. Examples of the ceramic particles include BaTiO3, (Ba 1-x [[ID=1,2]]Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O3 (0 < y < 1), etc.

[0035] In addition, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to particles such as barium titanate (BaTiO3) as the raw material for forming the dielectric layer 111 according to the object of the present invention.

[0036] On the other hand, in order to distinguish it from the dielectric layers included in the cover portions 112, 113 and the side margin portions 114, 115 described later, the dielectric layer included in the capacitance forming portion Ac can be defined as the first dielectric layer, the dielectric layers included in the cover portions 112, 113 can be defined as the second dielectric layer, and the dielectric layers included in the side margin portions 114, 115 can be defined as the third dielectric layer.

[0037] Furthermore, the first to third dielectric layers can be formed using a dielectric material such as barium titanate (BaTiO3), and can therefore contain a dielectric microstructure after firing. The dielectric microstructure can include multiple crystal grains, grain boundaries located between adjacent crystal grains, and triple points located at points where three or more grain boundaries meet, and can contain multiple crystal grains, grain boundaries, and triple points.

[0038] The thickness (td) of the dielectric layer 111 does not need to be particularly limited.

[0039] To ensure the reliability of the multilayer electronic component 100 in a high-voltage environment, the thickness (td) of the dielectric layer 111 may be 30 μm or less, 20 μm or less, 10 μm or less, 8 μm or less, 7 μm or less, 6 μm or less, or 5 μm or less. Furthermore, to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness (td) of the dielectric layer 111 may be 3.0 μm or less. To more easily achieve ultra-miniaturization and high capacitance, the thickness (td) of the dielectric layer 111 may be 1.0 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0040] Here, the thickness (td) of the dielectric layer 111 can refer to the thickness (td) of the dielectric layer 111 placed between the internal electrode layer and the floating electrode layer.

[0041] In this case, the thickness (td) of the dielectric layer 111 may be a concept that includes the thickness (td) of any one of the multiple dielectric layers 111, or it may be a concept that includes the thickness (td) of each of the dielectric layers 111.

[0042] Furthermore, the thickness (td) of the dielectric layer 111 may refer to the average thickness (td) of a single dielectric layer 111, the average thickness (td) of each of the multiple dielectric layers 111, or the average thickness (td) of the multiple dielectric layers 111.

[0043] The average thickness (td) of the dielectric layer 111 can be measured by scanning an image of the cross-section of the main body 110 in the length and thickness directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average thickness (td) of a single dielectric layer 111 can be calculated as the average value obtained by measuring the thickness of a single dielectric layer 111 at five equally spaced points in the length direction in the scanned image. These five equally spaced points can be specified in the capacitance forming section Ac. Furthermore, by extending this measurement of average values ​​to three dielectric layers 111 and measuring the average values, the average thickness (td) of multiple dielectric layers 111 can be further generalized.

[0044] The internal electrode layer and the floating electrode layer may be stacked alternately with the dielectric layer 111.

[0045] The internal electrode layer may include a first internal electrode 121 and a second internal electrode 122 arranged on the dielectric layer 111 and spaced apart from each other in the longitudinal direction, and the floating electrode layer may include a third internal electrode 123 arranged on a dielectric layer 111 different from that of the internal electrode layer. The internal electrode layer and the floating electrode layer can be electrically isolated from each other by the dielectric layer 111 placed in between.

[0046] More specifically, the first internal electrode 121 and the second internal electrode 122 may be arranged on a single dielectric layer 111 and spaced apart from each other in the longitudinal direction. The first internal electrode 121 may be spaced apart from the fourth surface 4 and exposed via the third surface 3, and the second internal electrode 122 may be spaced apart from the third surface 3 and exposed via the fourth surface 4. The first external electrode 131 may be arranged on the third surface 3 of the main body 110 and connected to the first internal electrode 121 exposed on the third surface 3, and the second external electrode 132 may be arranged on the fourth surface 4 of the main body 110 and connected to the second internal electrode 122 exposed on the fourth surface 4.

[0047] In other words, the first internal electrode 121 is not connected to the second external electrode 132, but can be connected to the first external electrode 131, and the second internal electrode 122 is not connected to the first external electrode 131, but can be connected to the second external electrode 132.

[0048] The third internal electrode 123 may be placed on a dielectric layer 111 different from the internal electrode layer, or it may be placed at a distance from the first external electrode 131 and the second external electrode 132, or more specifically, it may be placed at a distance from the third surface 3, the fourth surface 4, the fifth surface 5 and the sixth surface 6.

[0049] On the other hand, the main body 110 can be formed by alternately laminating a first ceramic green sheet printed with a first internal electrode paste that will become the first internal electrode 121 and a second internal electrode paste that will become the second internal electrode 122, and a second ceramic green sheet printed with a third internal electrode paste that will become the third internal electrode 123, and then firing them. Screen printing or gravure printing can be used as the printing method for the conductive paste for the internal electrodes, but the present invention is not limited thereto.

[0050] The materials forming the first to third internal electrodes 121, 122, and 123 are not particularly limited, and any material with excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 may include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0051] On the other hand, the thickness (te) of the first to third internal electrodes 121, 122, and 123 does not need to be particularly limited, and in the following, the explanation of the thickness (te) of the internal electrodes 121, 122, and 123 can refer to the respective thicknesses (te) of the first internal electrode 121, the second internal electrode 122, and the third internal electrode 123.

[0052] To ensure the reliability of the multilayer electronic component 100 in a high-voltage environment, the thickness (te) of the internal electrodes 121, 122, and 123 may be 3.0 μm or less. Furthermore, to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness (te) of the internal electrodes 121, 122, and 123 may be 1.0 μm or less. To more easily achieve ultra-miniaturization and high capacitance, the thickness (te) of the internal electrodes 121, 122, and 123 may be 0.6 μm or less, and more preferably 0.4 μm or less.

[0053] In this case, the thickness (te) of the internal electrodes 121, 122, and 123 may be a concept that includes the thickness (te) of at least one of the multiple internal electrodes 121, 122, and 123, or it may be a concept that includes the thickness (te) of each of the multiple internal electrodes 121, 122, and 123.

[0054] Furthermore, the thickness (te) of internal electrodes 121 and 122 may refer to the average thickness (te) of one of the internal electrodes 121, 122, and 123, or the average thickness (te) of each of the multiple internal electrodes 121, 122, and 123, or the average thickness (te) of the multiple internal electrodes 121, 122, and 123.

[0055] The average thickness (te) of the internal electrodes 121, 122, and 123 can be measured by scanning an image of the cross-section in the length and thickness directions of the main body 110 with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average thickness (te) of one of the internal electrodes 121, 122, 123 can be the average value calculated by measuring the thickness at five equally spaced points in the length direction of one internal electrode in the scanned image. The five equally spaced points can be specified in the capacitance forming portion Ac.

[0056] On the other hand, in one embodiment of the present invention, the thickness (td) of at least one of the plurality of dielectric layers 111 and the thickness (te) of at least one of the plurality of internal electrodes 121, 122, 123 can satisfy \(2\times te < td\).

[0057] In other words, the thickness (td) of one of the dielectric layers 111 may be greater than twice the thickness (te) of one of the internal electrodes 121, 122, 123. Preferably, the average thickness (td) of the plurality of dielectric layers 111 may be greater than twice the average thickness (te) of the plurality of internal electrodes 121, 122, 123.

[0058] Generally, for high-voltage electrical components, the main issue is the reliability problem due to the decrease in the breakdown voltage (BDV) under high-voltage environments.

[0059] Therefore, in order to prevent the decrease in the breakdown voltage under high-voltage environments, by making the average thickness (td) of the dielectric layer 111 greater than twice the average thickness (te) of the internal electrodes 121, 122, 123, the characteristics of the breakdown voltage can be improved.

[0060] When the average thickness (td) of the dielectric layer 111 is less than or equal to twice the average thickness (te) of the internal electrodes 121, 122, 123, the breakdown voltage may decrease, and there may be a possibility of a short circuit between the internal electrodes.

[0061] On the other hand, the main body 110 may include cover portions 112 and 113 that are positioned on both end surfaces (end-surfaces) in the thickness direction of the volume forming portion Ac.

[0062] Specifically, it may include a first cover portion 112 positioned on one surface of the volume-forming portion Ac in the thickness direction, and a second cover portion 113 positioned on the other surface of the volume-forming portion Ac in the thickness direction. More specifically, for example, it may include a first cover portion 112 positioned at the bottom of the volume-forming portion Ac in the thickness direction, and a second cover portion 113 positioned at the top of the volume-forming portion Ac in the thickness direction.

[0063] The first cover portion 112 and the second cover portion 113 can be formed by arranging or stacking a single second dielectric layer or two or more second dielectric layers in the thickness direction on the upper and lower surfaces of the capacitance forming portion Ac, respectively, and can essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0064] The first cover portion 112 and the second cover portion 113 do not include internal electrodes 121 and 122 and may contain the same dielectric material as the first dielectric layer 111 of the capacitance forming portion Ac. That is, the first cover portion 112 and the second cover portion 113 may contain a dielectric material, for example, a barium titanate (BaTiO3) based dielectric material.

[0065] On the other hand, the thickness (tc) of the cover portions 112 and 113 is not particularly limited, and in the following description of the thickness (tc) of the cover portions 112 and 113, it can refer to the respective thicknesses (tc) of the first cover portion 112 and the second cover portion 113.

[0066] To maintain the reliability of the stacked electronic component 100 in a high-voltage environment, the upper limit of the thickness (tc) of the cover portions 112 and 113 may be 1200 μm or less, 1100 μm or less, 1000 μm or less, 900 μm or less, 800 μm or less, 700 μm or less, 600 μm or less, 500 μm or less, 400 μm or less, or 300 μm or less, and the lower limit of the thickness (tc) of the cover portions 112 and 113 may be 100 μm or more, or 200 μm or more. In other words, the thickness (tc) of the cover portions 112 and 113 can satisfy 100 μm ≤ tc ≤ 1200 μm.

[0067] Here, the thickness (tc) of the cover portions 112 and 113 can be said to represent the average thickness of the cover portions 112 and 113.

[0068] Furthermore, the average thickness (tc) of the cover portions 112 and 113 may refer to the average thickness (tc) of the first and second cover portions 112 and 113, respectively, or it may refer to the average thickness (tc) of the first and second cover portions 112 and 113.

[0069] The average thickness (tc) of the cover sections 112 and 113 can be measured by scanning an image of the cross-section of the main body 110 in the length and thickness directions using a scanning electron microscope (SEM) at 10,000x magnification. More specifically, it can mean the average value calculated by measuring the thickness at five equally spaced points in the length direction in an image scanned from a single cover section 112 or 113.

[0070] Furthermore, the average thickness (tc) of the cover portions 112 and 113 measured by the method described above can be substantially the same as the average thickness of the cover portions 112 and 113 in the cross-section in the width and thickness directions of the main body 110.

[0071] On the other hand, the stacked electronic component 100 may include side margin portions 114 and 115, which are the widthwise edge regions of the internal electrodes 121, 122, and 123.

[0072] More specifically, the side margin portions 114 and 115 may include a first side margin portion 114 positioned between the internal electrodes 121, 122, and 123 and the fifth surface 5, and a second side margin portion 115 positioned between the internal electrodes 121, 122, and 123 and the sixth surface 6.

[0073] The side margins 114 and 115, as shown in the figure, can refer to the region between the boundary surface of the body 110 and both ends in the width direction of the third internal electrode 123, based on the cross-section in the width and thickness directions of the body 110. In the drawing, only the region between the boundary surface of the body 110 and both ends in the width direction of the third internal electrode 123 is shown, but depending on the cross-sectional position in the width and thickness directions, it can also refer to the region between the boundary surface of the body 110 and both ends in the width direction of the first to third internal electrodes 121, 122, and 123.

[0074] The side margins 114 and 115 can refer to the ceramic green sheet regions excluding the internal electrodes 121, 122, and 123 when the paste for the internal electrodes is applied to the ceramic green sheet applied to the volume forming section Ac, excluding the areas that will become the side margins 114 and 115.

[0075] However, the invention is not limited to this, and the side margin portions 114 and 115 can be formed by applying conductive paste for internal electrodes to the ceramic green sheet applied to the capacitance forming portion Ac, except for the areas where the side margin portions 114 and 115 are formed, to form the internal electrodes 121, 122, and 123. In order to suppress the step caused by the internal electrodes 121, 122, and 123, the main body 110 can be cut so that the laminated internal electrodes 121, 122, and 123 are exposed on the fifth surface 5 and sixth surface 6 of the main body 110, and then a single third dielectric layer or two or more third dielectric layers can be formed by arranging or laminating them in the width direction on both end surfaces (end-surfaces) in the width direction of the capacitance forming portion Ac.

[0076] The side margins 114 and 115 essentially serve to prevent damage to the internal electrodes 121, 122, and 123 due to physical or chemical stress.

[0077] The side margin portions 114 and 115 do not include the internal electrodes 121, 122, and 123 and may contain the same material as the first dielectric layer 111. That is, the first side margin portion 114 and the second side margin portion 115 may contain a dielectric material, for example, a barium titanate (BaTiO3) based dielectric material.

[0078] On the other hand, the width (wm) of the side margins 114 and 115 does not need to be particularly limited, and in the following description of the width (wm) of the side margins 114 and 115, it can mean the width (wm) of the first side margin 114 and the second side margin 115, respectively.

[0079] To maintain the reliability of the stacked electronic component 100 in a high-voltage environment, the width (wm) of the side margins 114 and 115 may be 50 μm or less, preferably 30 μm or less, and more preferably 20 μm or less for ultra-miniature products.

[0080] Here, the width (wm) of the side margins 114 and 115 can be said to represent the average width (wm) of the side margins 114 and 115.

[0081] Furthermore, the average width (wm) of the side margins 114 and 115 may refer to the average width (wm) of the first side margin 114 and the second side margin 115, respectively, or it may refer to the average width (wm) of the first side margin 114 and the second side margin 115.

[0082] The average width (wm) of the side margins 114 and 115 can be measured by scanning an image of the cross-section of the main body 110 in the width and thickness directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, it can mean the average value calculated by measuring the width at five equally spaced points in the thickness direction in an image scanned from one side margin 114 or 115.

[0083] One embodiment of the present invention describes a structure in which a stacked electronic component 100 has two external electrodes 131 and 132. However, the number and shape of the external electrodes 131 and 132 can be changed according to the form of the internal electrodes 121, 122, and 123 or other purposes.

[0084] The first external electrode 131 and the second external electrode 132 are arranged on the main body 110 and can be connected to the first internal electrode 121 and the second internal electrode 122, respectively, but do not need to be connected to the third internal electrode 123.

[0085] More specifically, the external electrodes 131 and 132 may include a first external electrode 131 and a second external electrode 132, which are arranged on the third surface 3 and the fourth surface 4 of the main body 110, respectively, and connected to a first internal electrode 121 and a second internal electrode 122, respectively. That is, the first external electrode 131 may be arranged on the third surface 3 of the main body and connected to the first internal electrode 121, and the second external electrode 132 may be arranged on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0086] Furthermore, the external electrodes 131 and 132 may be arranged extending from a portion of the first surface 1 and the second surface 2 of the main body 110, or extending from a portion of the fifth surface 5 and the sixth surface 6 of the main body 110. That is, the first external electrode 131 may be arranged on the third surface 3 of the main body 110 and on a portion of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110, and the second external electrode 132 may be arranged on the fourth surface 4 of the main body 110 and on a portion of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110.

[0087] More specifically, the external electrodes 131 and 132 may include connecting portions 131-1 and 132-1 positioned on the third and fourth surfaces 3 and 4 of the main body 110, as well as band portions 131-2 and 132-2 extending from the connecting portions 131-1 and 132-1 to parts of the first and second surfaces 1 and 2 of the main body 110.

[0088] The first external electrode 131 may include a first connecting portion 131-1 positioned on the third surface 3 of the main body 110, and a first band portion 131-2 extending from the first connecting portion 131-1 to a portion of the first surface 1 and the second surface 2. The second external electrode 132 may include a second connecting portion 132-1 positioned on the fourth surface 4 of the main body 110, and a second band portion 132-2 extending from the second connecting portion 132-1 to a portion of the first surface 1 and the second surface 2.

[0089] On the other hand, the first band portion 131-2 may include a first-first band portion 131-2 extending from the first connecting portion 131-1 to a part of the first surface 1, and a first-second band portion 131-2 extending from the first connecting portion 131-1 to a part of the second surface 2, and the second band portion 132-2 may include a second-first band portion 132-2 extending from the second connecting portion 132-1 to a part of the first surface 1, and a second-second band portion 132-2 extending from the second connecting portion 132-1 to a part of the second surface 2.

[0090] In the present invention, unless otherwise contradictory, the description of band sections 131-2 and 132-2 may correspond to the description of the first band section 131-2 and the second band section 132-2, respectively; the description of the first band section 131-2 may correspond to the description of the 1-1 band section 131-2 and the 1-2 band section 131-2, respectively; and the description of the second band section 132-2 may correspond to the description of the 2-1 band section 132-2 and the 2-2 band section 132-2, respectively.

[0091] The length (BL) between the first band section 131-2 and the second band section 132-2 can satisfy the condition of 800 μm or more and 2800 μm or less. That is, it can satisfy the condition 800 μm ≤ BL ≤ 2800 μm.

[0092] Here, the length (BL) between the first band portion 131-2 and the second band portion 132-2 can mean the length (BL) between the first-second band portion 131-2 and the second-second band portion 132-2 on the second surface 2, or the length between the first-first band portion 131-2 and the second-first band portion 132-2 on the first surface 1, preferably the length (BL) between the first-second band portion 131-2 and the second-second band portion 132-2 on the second surface 2, and more preferably the shortest length (BL).

[0093] By ensuring that the length (BL) between the first band section 131-2 and the second band section 132-2 satisfies 800 μm ≤ BL ≤ 2800 μm, it is possible to prevent the occurrence of arc, a discharge phenomenon that can occur due to insulation failure between the external electrodes 131 and 132 in a high-voltage environment.

[0094] If the length (BL) between the first band portion 131-2 and the second band portion 132-2 is less than 800 μm, the distance between the first external electrode 131 and the second external electrode 132 is close, and there is a risk of arc generation in a high-voltage environment. If the length (BL) between the first band portion 131-2 and the second band portion 132-2 exceeds 2800 μm, there is a possibility that arc will not be generated, but the contact area between the external electrodes 131 and 132 and the main body 110 will decrease, which may cause peeling of the external electrodes 131 and 132, and there is a risk of mounting defects due to insufficient solder application area when mounting to a substrate.

[0095] The method for measuring the length (BL) between the first band portion 131-2 and the second band portion 132-2 may be as follows, but is not limited thereto. First, when the cross-section in the length and thickness directions at the center of the width direction of the stacked electronic component 100 is observed with a scanning electron microscope (SEM) or the like, the length (distance) between the longitudinal endpoint of the first-to-second band portion 131-2 on the second surface 2 (for example, the point where it touches the second surface 2) and the longitudinal endpoint of the second-to-second band portion 132-2 on the second surface 2 (for example, the point where it touches the second surface 2) can be measured and determined.

[0096] The external electrodes 131 and 132 may be formed from any material that has electrical conductivity, such as metal, and the specific material may be determined by considering electrical properties, structural stability, etc., and may include an electrode layer. Furthermore, the electrode layer may have a multilayer structure.

[0097] For example, the external electrodes 131 and 132 may include a first electrode layer placed on the main body 110 and a second electrode layer placed on the first electrode layer. Furthermore, they may include a third electrode layer placed on the second electrode layer.

[0098] Here, it is preferable that the first to third electrode layers are layers that are distinct from each other. However, this is not limited to this, and they may be divided according to the order of the manufacturing process, and at least some of the first to third electrode layers may not be distinguishable from each other and may be observed as a single layer.

[0099] In this invention, "distinguished" can mean, but is not limited to, two layers being distinguishable by physical differences, chemical differences, and / or simple optical differences, however, the distinction between layers can be made by the presence or absence of an "interface." An interface can mean a surface in which two layers in contact with each other are distinguishable from one another, for example, a state in which they can be distinguished by differences in components determined by EDS analysis using equipment such as a scanning electron microscope (SEM).

[0100] The first electrode layer and the second electrode layer may be formed by transferring a sheet containing a conductive metal onto the main body 110, or by applying a conductive paste for external electrodes containing a conductive metal to the main body 110 and then firing it, or by dipping the main body 110 in a conductive paste for external electrodes containing a conductive metal, but are not limited to these methods.

[0101] The external electrodes 131 and 132 are arranged on the main body 110 and may include a first electrode layer comprising a first conductive metal and glass, and a second electrode layer comprising a second conductive metal and resin, which is arranged on the first electrode layer.

[0102] The conductive metals included in the first and second electrode layers can be materials with excellent electrical conductivity. For example, the conductive metals may include, but are not limited to, one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and their alloys.

[0103] Here, the conductive metal contained in the first electrode layer can be called the first conductive metal, and the conductive metal contained in the second electrode layer can be called the second conductive metal. In this case, the first conductive metal and the second conductive metal may be the same or different from each other, and if multiple conductive metals are included, only some of them may be the same conductive metal, but this is not particularly limited.

[0104] The glass included in the first electrode layer is not particularly limited as long as it can improve adhesion to the main body 110 and can be mixed with the second conductive metal to form a paste, for example, an epoxy resin can be included.

[0105] The first conductive metal contained in the first electrode layer can serve to electrically connect with the internal electrodes 121 and 122.

[0106] The first conductive metal included in the first electrode layer is not particularly limited as long as it is a material that can be electrically connected to the internal electrodes 121 and 122, and may include, for example, at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0107] The second conductive metal contained in the second electrode layer can serve to electrically connect with the first electrode layer.

[0108] The second conductive metal included in the second electrode layer is not particularly limited as long as it is a material that can be electrically connected to the first electrode layer, and may include at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0109] The second conductive metal contained in the second electrode layer may include at least one of spherical particles and flake-shaped particles. That is, the second conductive metal may consist only of flake-shaped particles, only of spherical particles, or in a form in which flake-shaped particles and spherical particles are mixed.

[0110] Here, spherical particles may include forms that are not perfectly spherical, for example, forms with a dimensional ratio (major axis / minor axis) of 1.45 or less. Flake-like particles mean particles that are flat and elongated, and are not particularly limited, but for example, they may have a dimensional ratio (major axis / minor axis) of 1.95 or more. The dimensions of the spherical particles and flake-like particles in the major axis and minor axis directions can be measured from images obtained by scanning a cross-section (length and thickness) of a multilayer electronic component cut in the center of the width direction with a scanning electron microscope (SEM).

[0111] Furthermore, the second electrode layer may contain an intermetallic compound.

[0112] The inclusion of an intermetallic compound can further improve the electrical connectivity with the first electrode layer. The intermetallic compound plays a role in improving electrical connectivity by linking multiple second conductive metal particles, and can also play a role in surrounding and connecting multiple second conductive metal particles to one another.

[0113] In this case, the intermetallic compound may include a metal having a melting point lower than the curing temperature of the resin. That is, because the intermetallic compound includes a metal having a melting point lower than the curing temperature of the resin, the metal having a melting point lower than the curing temperature of the resin melts during the drying and curing process, forming an intermetallic compound with some of the metal particles and surrounding the metal particles. In this case, the intermetallic compound may preferably include a low-melting-point metal of 300°C or less. More specifically, for example, it may include tin (Sn) having a melting point of 213-220°C. During the drying and curing process, the tin (Sn) melts, and the molten tin (Sn) wets high-melting-point metal particles such as silver (Ag), nickel (Ni), or copper (Cu) by capillary action, reacting with some of the silver (Ag), nickel (Ni), or copper (Cu) metal particles to form intermetallic compounds such as Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn. Silver (Ag), nickel (Ni), or copper (Cu) that are not involved in the reaction may remain in the form of metal particles.

[0114] Therefore, the multiple second conductive metal particles may include at least one of silver (Ag), nickel (Ni), and copper (Cu), and the intermetallic compound may include one or more of Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn.

[0115] The third electrode layer can play a role in improving mounting characteristics, and may be a plated layer formed on the second electrode layer by a plating method, but is not particularly limited thereto.

[0116] The material of the third electrode layer is not particularly limited and may include, for example, at least one of nickel (Ni), tin (Sn), silver (Ag), palladium (Pd), and alloys thereof.

[0117] The third electrode layer may be a single layer or multiple layers.

[0118] More specifically, for example, the third electrode layer may be a nickel (Ni) electrode layer or a tin (Sn) electrode layer, or it may be a configuration in which a nickel (Ni) electrode layer and a tin (Sn) electrode layer are formed sequentially on the second electrode layer, or it may be a configuration in which a tin (Sn) electrode layer, a nickel (Ni) electrode layer, and a tin (Sn) electrode layer are formed sequentially. Furthermore, the third electrode layer may include multiple nickel (Ni) electrode layers and / or multiple tin (Sn) electrode layers.

[0119] The insulating layer 151 can be placed on the main body 110 and may contain silicon (Si).

[0120] The insulating layer 151 can prevent the occurrence of arc, a discharge phenomenon that can occur due to insulation failure between the external electrodes 131 and 132 in a high-voltage environment.

[0121] The insulating layer 151 may contain an insulating material containing silicon (Si), and more specifically, it may contain at least one of SiO2 and Si3N4. It can also be formed by mixing an insulating material containing silicon (Si) with additives such as ZrO2 and TiO2.

[0122] The average thickness (ILT) of the insulating layer 151 may be between 1 μm and 10 μm. More specifically, for example, the lower limit may be 1 μm or more, 2 μm or more, 3 μm or more, 4 μm or more, or 5 μm or more, and the upper limit may be 10 μm or less, 9 μm or less, 8 μm or less, 7 μm or less, or 6 μm or less. In other words, the average thickness (ILT) of the insulating layer 151 can satisfy 1 μm ≤ ILT ≤ 10 μm.

[0123] The method for measuring the average thickness (ILT) of the insulating layer 151 may be as follows, but is not limited thereto. First, using the cross-section in the length and thickness direction of the multilayer electronic component 100 as a reference, the thickness of the insulating layer 151, which is placed between the first external electrode 131 and the second external electrode 132, can be measured at three points spaced at regular intervals in the length direction using an optical microscope or the like, and the average thickness can be determined.

[0124] The insulating layer 151 may be placed on the main body 110, or on the main body 110, the first external electrode 131, and the second external electrode 132.

[0125] More specifically, for example, the insulating layer 151 may be placed on at least one of the first to sixth surfaces 1, 2, 3, 4, 5, and 6, preferably on at least one of the second to sixth surfaces 2, 3, 4, 5, and 6. In this case, the insulating layer 151 may be placed in direct contact with the first surface 1 and / or the second surface 2 and the fifth surface 5 and / or the sixth surface 6, but may not be in direct contact with the third surface 3 and / or the fourth surface 4, instead being placed on the third surface 3 and / or the fourth surface 4 with the first and / or second external electrodes 131 and 132 in between.

[0126] Furthermore, the insulating layer 151 may be arranged on the first connection portion 131-1 and the first band portion 131-2 and the second connection portion 132-1 and the second band portion 132-2, and preferably on the first connection portion 131-1 and the first-second band portions 131-2 on the second surface 2, and on the second connection portion 132-1 and the second-second band portion 132-2 on the second surface 2.

[0127] This may be intended to improve the mountability of the multilayer electronic component 100 onto the substrate by not placing an insulating layer 151 on the mounting surface, for example, the first surface 1, the first-first band portion 131-2 on the first surface 1, and the second-first band portion 132-2 on the first surface 1.

[0128] There is no particular limit to the size of the stacked electronic component 100.

[0129] However, in order to maintain reliability in a high-voltage environment, the thickness of the cover, dielectric layer, and / or internal electrodes must be increased. Therefore, the effects of the present invention may become more pronounced in stacked electronic components 100 of size 2012 (length × width: 2.0 mm × 1.2 mm, where the length and width satisfy an error of ±10%) or larger.

[0130] Although the stacked electronic component 100 according to one embodiment of the present invention has been described mainly in the case where the length is greater than the width, in contrast to this, the stacked electronic component 100 according to another embodiment of the present invention may have a width greater than the length.

[0131] In a stacked electronic component 100 according to one embodiment of the present invention, the ratio (tc / BL) of the average thickness (tc) of the cover portions 112 and 113 to the length (BL) between the first band portion 131-2 and the second band portion 132-2 can satisfy the condition 0.036 ≤ tc / BL ≤ 1.5.

[0132] By ensuring that the ratio (tc / BL) of the average thickness (tc) of the cover sections 112 and 113 to the length (BL) between the first band section 131-2 and the second band section 132-2 satisfies 0.036 ≤ tc / BL ≤ 1.5, arc generation can be prevented, potentially improving moisture resistance reliability and enabling superior mountability.

[0133] If the ratio of the average thickness (tc) of the cover portions 112 and 113 to the length (BL) between the first band portion 131-2 and the second band portion 132-2 (tc / BL) is less than 0.036, arcing may occur or moisture resistance reliability may decrease. If the ratio of the average thickness (tc) of the cover portions 112 and 113 to the length (BL) between the first band portion 131-2 and the second band portion 132-2 (tc / BL) exceeds 1.5, arcing may occur or mounting defects may occur.

[0134] In this case, the ratio (AV / BL) of the voltage applied to the stacked electronic component 100 to the length (BL) between the first band section 131-2 and the second band section 132-2 can satisfy the condition 0.5V / μm ≤ AV / BL ≤ 1.2V / μm.

[0135] Here, AV can satisfy 630V ≤ AV, preferably 630V ≤ AV ≤ 3000V, which can represent the high voltage in this invention.

[0136] Here, by ensuring that the ratio (AV / BL) of the voltage applied to the multilayer electronic component 100 to the length (BL) between the first band section 131-2 and the second band section 132-2 satisfies 0.5V / μm ≤ AV / BL ≤ 1.2V / μm, arc generation can be prevented, potentially improving humidity resistance reliability and enabling excellent mountability.

[0137] If the ratio of the voltage applied to the multilayer electronic component 100 (AV / BL) to the length (BL) between the first band section 131-2 and the second band section 132-2 is less than 0.5V / μm, humidity resistance may decrease or mounting defects may occur. If the ratio of the voltage applied to the multilayer electronic component 100 (AV / BL) to the length (BL) between the first band section 131-2 and the second band section 132-2 is greater than 1.2V / μm, arcing may occur.

[0138] The present invention will be described in more detail below through test examples, but this is intended to aid in a concrete understanding of the invention, and the scope of the present invention is not limited by the test examples.

[0139] (Example test) Table 1 below shows the evaluation of moisture resistance reliability, mounting defects, and the presence or absence of arc generation based on the ratio (tc / BL) of the average thickness (tc) of the cover portion to the length (BL) between the first and second band portions.

[0140] The sample chip was manufactured to include a main body with a capacitance forming section in which an internal electrode layer and a floating electrode layer are alternately arranged with a dielectric layer in between, and a cover section arranged in the thickness direction of the capacitance forming section; a first external electrode and a second external electrode arranged on the third and fourth surfaces of the main body, respectively; and an insulating layer arranged on the main body and the first and second external electrodes. The insulating layer was formed on all surfaces except the mounting surface (first surface) (meaning it was positioned in direct contact with the second, fifth, and sixth surfaces, and in direct contact with the first and second external electrodes arranged on the third and fourth surfaces). The sample chip was manufactured to size 3225 (length × width: 3.2 mm × 2.5 mm, satisfying an error of ±10%).

[0141] 320 sample chips were prepared for each test example. The sample chips were prepared similarly, except that the average thickness (tc) of the cover portion and the length (BL) between the first and second band portions were different.

[0142] Based on the cross-section of the sample chip in the length and thickness direction, the length between the first and second band sections (BL) was measured using an optical microscope as the distance between the first and second band sections on the surface where the insulating layer is located (second surface), and the average thickness of the cover section (tc) was measured using a scanning electron microscope as the average thickness (tc) of one second cover section (upper cover section).

[0143] For the humidity resistance reliability evaluation, 320 sample chips were mounted on a substrate, and then a voltage of 2000V to 3000V was applied for 24 hours under conditions of 85°C and 85%RH. If a short circuit occurred, it was evaluated as defective and marked with "X," and if no short circuit occurred, it was evaluated as normal and marked with "O."

[0144] For mountability, 320 sample chips were mounted on a substrate to evaluate humidity resistance reliability. After completing the humidity resistance reliability evaluation, if a sample chip detached or an external electrode peeled off, it was evaluated as defective and marked with "X". If neither sample chip detachment nor external electrode peeling occurred, it was evaluated as normal and marked with "O".

[0145] For the arc test, after mounting 20 sample chips onto a substrate and applying a voltage of 2000V to 3000V at a temperature of 150°C, an "O" was recorded if an arc discharge occurred, and an "X" was recorded if no arc discharge occurred. If no arc discharge occurred, the chip was evaluated as having excellent high-temperature reliability.

[0146] [Table 1]

[0147] Test Example 1, with a tc / BL value of 0.027, had excellent mountability but poor moisture resistance reliability, resulting in arcing. In contrast, Test Examples 2 to 5, with tc / BL values ​​between 0.036 and 1.5, exhibited excellent moisture resistance reliability and mountability, and no arcing occurred. Test Example 6, with a tc / BL value of 1.857, had excellent moisture resistance reliability but poor mountability and arcing occurred.

[0148] This confirms that when the tc / BL value is between 0.036 and 1.5, it exhibits excellent moisture resistance reliability, ease of mounting, and does not generate arcs.

[0149] Table 2 below evaluates and describes whether or not arc generation occurs based on the ratio of the applied voltage (AV) to the length (BL) between the first and second band sections (AV / BL).

[0150] For the arc (arc), the same evaluation method as in the aforementioned test example was applied. If an arc discharge phenomenon occurred, it was recorded as "O," and if no arc discharge phenomenon occurred, it was recorded as "X."

[0151] [Table 2]

[0152] In Test Examples 7, 8, 10, and 11, where the AV / BL values ​​were 1.03, 1.18, 1.04, and 1.19, no arc discharge occurred. However, in Test Examples 9 and 12, where the AV / BL values ​​were 1.29 and 1.29, arc discharge occurred.

[0153] This confirms that arc discharge does not occur when the tc / BL value is 1.2 or less.

[0154] Although embodiments and test examples of the present invention have been described in detail above, the present invention is not limited by the embodiments and accompanying drawings described above, but is limited by the claims provided. Therefore, within the scope of the technical idea of ​​the present invention as described in the claims, various forms of substitution, modification, and alteration are possible by persons with ordinary skill in the art, and these also fall within the scope of the present invention.

[0155] Furthermore, the term "embodiment" as used in this invention does not mean that each "embodiment" is the same as another, but is provided to highlight and describe the unique and distinct features of each. However, the above-presented embodiments do not preclude their realization in combination with features of another embodiment. For example, even if a matter described in one particular embodiment is not described in another embodiment, it can be understood as a description related to the other embodiment, unless there is a description in the other embodiment that contradicts or is contrary to that matter.

[0156] The terms used in this invention are used solely to describe one embodiment and are not intended to limit the invention. In this context, singular expressions may include plural expressions unless the context clearly indicates otherwise. [Explanation of symbols]

[0157] 100: Stacked Electronic Components 110: Main unit 111: Dielectric layer 112, 113: Cover section 114, 115: Side margin section 121, 122, 123: Internal electrode 131, 132: External electrode 151: Insulating layer

Claims

1. A capacitance forming section including a dielectric layer and internal electrode layers and floating electrode layers arranged alternately in the thickness direction with the dielectric layer in between; a cover section including a cover section arranged at the upper and lower parts of the capacitance forming section in the thickness direction, the main body including a first and second surface facing each other in the thickness direction, a third and fourth surface connected to the first and second surfaces and facing each other in the length direction, and a fifth and sixth surface connected to the first, second, third and fourth surfaces and facing each other in the width direction; A first external electrode including a first connecting portion disposed on the third surface, and a first band portion that extends from the first connecting portion to a part of the first surface and the second surface, A second external electrode including a second connecting portion disposed on the fourth surface, and a second band portion that extends from the second connecting portion to a part of the first surface and the second surface, The main body includes an insulating layer containing silicon (Si) disposed on the main body, A multilayer electronic component in which the ratio (tc / BL) of the average thickness (tc) of the cover portion to the length (BL) between the first band portion and the second band portion satisfies 0.036 ≤ tc / BL ≤ 1.

5.

2. The stacked electronic component according to claim 1, wherein BL satisfies 800 μm ≤ BL ≤ 2800 μm.

3. The stacked electronic component according to claim 1, wherein tc satisfies 100 μm ≤ tc ≤ 1200 μm.

4. The internal electrode layer includes a first internal electrode exposed on the third surface and connected to the first external electrode, and a second internal electrode exposed on the fourth surface and connected to the second external electrode. The stacked electronic component according to claim 1, wherein the floating electrode layer includes a third internal electrode disposed at a distance from the first external electrode and the second external electrode.

5. The stacked electronic component according to claim 1, wherein the average thickness (ILT) of the insulating layer satisfies 1 μm ≤ ILT ≤ 10 μm.

6. The multilayer electronic component according to claim 1, wherein the ratio (AV / BL) of the voltage applied to the multilayer electronic component to the length (BL) between the first band portion and the second band portion satisfies 0.5V / μm ≤ AV / BL ≤ 1.2V / μm.

7. The stacked electronic component according to claim 6, wherein AV satisfies 630V ≤ AV ≤ 3000V.

8. The stacked electronic component according to any one of claims 1 to 7, wherein the length of the stacked electronic component is 2.0 mm or more and the width is 1.2 mm or more.

9. A capacitance forming section including a dielectric layer and internal electrode layers and floating electrode layers arranged alternately in the thickness direction with the dielectric layer in between; a cover section including a cover section arranged at the upper and lower parts of the capacitance forming section in the thickness direction, the main body including a first and second surface facing each other in the thickness direction, a third and fourth surface connected to the first and second surfaces and facing each other in the length direction, and a fifth and sixth surface connected to the first, second, third and fourth surfaces and facing each other in the width direction; A first external electrode including a first connecting portion disposed on the third surface, and a first band portion that extends from the first connecting portion to a part of the first surface and the second surface, A second external electrode including a second connecting portion disposed on the fourth surface, and a second band portion that extends from the second connecting portion to a part of the first surface and the second surface, A laminated electronic component comprising an insulating layer containing silicon (Si) disposed on the main body, A multilayer electronic component in which the ratio (AV / BL) of the voltage applied to the multilayer electronic component to the length (BL) between the first band portion and the second band portion satisfies 0.5V / μm ≤ AV / BL ≤ 1.2V / μm.

10. The stacked electronic component according to claim 9, wherein AV satisfies 630V ≤ AV ≤ 3000V.

11. The multilayer electronic component according to claim 10, wherein the ratio (tc / BL) of the average thickness (tc) of the cover portion to the length (BL) between the first band portion and the second band portion satisfies 0.036 ≤ tc / BL ≤ 1.

5.

12. The stacked electronic component according to claim 11, wherein BL satisfies 800 μm ≤ BL ≤ 2800 μm.

13. The stacked electronic component according to claim 11, wherein tc satisfies 100 μm ≤ tc ≤ 1200 μm.

14. The internal electrode layer includes a first internal electrode exposed on the third surface and connected to the first external electrode, and a second internal electrode exposed on the fourth surface and connected to the second external electrode. The stacked electronic component according to any one of claims 9 to 13, wherein the floating electrode layer includes a third internal electrode disposed at a distance from the first external electrode and the second external electrode.

15. The multilayer electronic component according to any one of claims 9 to 13, wherein the average thickness (ILT) of the insulating layer satisfies 1 μm ≤ ILT ≤ 10 μm.

16. The stacked electronic component according to any one of claims 9 to 13, wherein the length of the stacked electronic component is 2.0 mm or more and the width is 1.2 mm or more.

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