Substrate processing system, determination method, program, and storage medium

Abstract

Determine when maintenance is due. [Solution] The substrate processing system comprises a process module that performs plasma processing, a vacuum transport module having a transport robot that loads and unloads substrates into and out of the process module, a sensor provided on the transport path of the substrate, and a control device. The control device performs a), b), c), d), and e). In a), the transport robot is controlled to load the substrate into the process module. In b), the process module is controlled to perform plasma processing within the process module. In c), the transport robot is controlled to unload the substrate from the process module. In d), the sensor is controlled to acquire an image of the peripheral edge of the back surface of the substrate. In e), based on the acquired image, it is determined whether or not to perform maintenance processing.

Description

Technical Field

[0001] Various aspects and embodiments of the present disclosure relate to a substrate processing system, a determination method, a program, and a storage medium. Background Art

[0002] The following Patent Document 1 discloses that "a plasma processing method includes: a plasma processing step of performing plasma processing on a substrate placed on a placement surface of a placement table while causing a refrigerant of 0°C or lower to flow through a refrigerant flow path formed inside the placement table; a placement step of placing a dummy substrate instead of the substrate on the placement surface of the placement table; and a removal step of removing a reaction product generated according to the plasma processing of the substrate from the peripheral edge of the placement surface by plasma of a processing gas through the dummy substrate while heating the placement surface with the plasma of the processing gas in a state where the dummy substrate is placed on the placement surface of the placement table". Prior Art Documents Patent Documents

[0003] Patent Document 1 Japanese Unexamined Patent Publication No. 2019-160816 Summary of the Invention Problem to be Solved by the Invention

[0004] The present disclosure provides a substrate processing system, a determination method, a program, and a storage medium capable of determining maintenance timing. Means for Solving the Problem

[0005] One aspect of this disclosure is a substrate processing system comprising a process module for plasma processing, a vacuum transport module having a transport robot for loading and unloading substrates into and out of the process module, a sensor provided on the transport path of the substrate, and a control device. The control device performs a), b), c), d), and e). In a), the transport robot is controlled to load the substrate into the process module. In b), the process module is controlled to perform plasma processing within the process module. In c), the transport robot is controlled to unload the substrate from the process module. In d), the sensor is controlled to acquire an image of the peripheral edge of the back surface of the substrate. In e), based on the acquired image, it is determined whether or not to perform maintenance processing. [Effects of the Invention]

[0006] According to various aspects and embodiments of this disclosure, the timing of maintenance can be determined. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 shows an example of a substrate processing system. [Figure 2] Figure 2 shows an example of a process module (PM). [Figure 3] Figure 3 shows an example of an aligner unit. [Figure 4] Figure 4 is a flowchart showing an example of a substrate processing method in the first embodiment. [Figure 5A] Figure 5A shows an example of an image of the peripheral edge on the back side of the substrate. [Figure 5B] Figure 5B shows an example of an image of the peripheral edge on the back side of the substrate. [Figure 5C] Figure 5C shows an example of an image of the peripheral edge on the back side of the substrate. [Figure 6] Figure 6 shows an example of the difference in the first embodiment. [Figure 7]Figure 7 is a flowchart showing an example of a substrate processing method in the second embodiment. [Figure 8] Figure 8 shows an example of the difference in the second embodiment. [Figure 9] Figure 9 shows an example of the change in the cumulative value of the difference in the second embodiment. [Figure 10] Figure 10 is a flowchart showing an example of a substrate processing method in the third embodiment. [Figure 11] Figure 11 shows an example of an image of the peripheral edge on the back side of the substrate. [Figure 12] Figure 12 is a flowchart showing an example of a substrate processing method in the fourth embodiment. [Modes for carrying out the invention]

[0008] Embodiments of the substrate processing system, determination method, program, and storage medium will be described in detail below with reference to the drawings. However, the substrate processing system, determination method, program, and storage medium disclosed in the following embodiments are not limited to those described.

[0009] Incidentally, when etching or other processes are performed on a substrate, reaction products (so-called deposits) may adhere to the periphery of the substrate and the periphery of the stage on which the substrate is placed. When deposits adhere to the periphery of the substrate and the periphery of the stage on which the substrate is placed, these deposits may hinder the adsorption between the substrate and the mounting surface of the stage on which the substrate is placed. If an abnormality occurs in the adsorption between the substrate and the mounting surface of the stage, the deposits adhering to the mounting surface of the stage can be removed by cleaning the mounting surface of the stage.

[0010] When an abnormality occurs in the suction between the substrate and the mounting surface of the stage, processing of the substrate may not be performed normally, resulting in unnecessary discarding of the substrate. Therefore, it is desirable to remove deposits on the mounting surface of the stage before an abnormality occurs in the suction between the substrate and the mounting surface of the stage. However, if cleaning of the mounting surface of the stage is performed frequently, the time spent processing the substrate is reduced, which lowers the throughput of substrate processing.

[0011] Therefore, the present disclosure provides a technique capable of determining maintenance timing.

[0012] (First Embodiment) [Configuration of substrate processing system 1] Figure 1 is a diagram showing an example of a substrate processing system 1. In Figure 1, for convenience, internal components of some devices are shown transparently. The substrate processing system 1 includes a main body 10 and a control device 2 that controls the main body 10.

[0013] The main body 10 includes a vacuum transfer module (VTM) 11, a plurality of load lock modules (LLM) 12, an Equipment Front End Module (EFEM) 13, and a plurality of process modules (PM) 20. EFEM 13 is an example of an atmospheric transfer module.

[0014] A plurality of PM 20 are connected to the side wall of VTM 11 via gate valves G1. In the example of Figure 1, four PM 20 are connected to VTM 11. However, the disclosed technique is not limited thereto, and the number of PM 20 connected to VTM 11 may be more or less than four. Each PM 20 performs processing such as etching and film formation on a substrate W.

[0015] A plurality of LLM 12 are connected to the other side wall of VTM 11 via gate valves G2. In the example of Figure 1, two LLM 12 are connected to VTM 11. However, the disclosed technique is not limited thereto, and the number of LLM 12 connected to VTM 11 may be more or less than two.

[0016] A transport robot 110 is provided inside the VTM11. The transport robot 110 transports the substrate W between the PM20 and the LLM12. The inside of the VTM11 is maintained at a predetermined pressure lower than atmospheric pressure. In the example in Figure 1, one transport robot 110 is provided inside the VTM11. However, the disclosed technology is not limited to this, and multiple transport robots 110 may be provided inside the VTM11.

[0017] Each LLM12 is connected to the EFEM13 via a gate valve G3. Inside the EFEM13 are multiple storage units 130, a transport robot 131, and an aligner unit 30. Multiple openings are provided in the side wall of the EFEM13, and each opening is provided with a load port (LP) LP14 to which a container such as a FOUP (Front Opening Unified Pod) for housing substrates W is connected. A gate valve G4 is provided between the EFEM13 and the LP14. In the example shown in Figure 1, five LP14s are provided in the side wall of the EFEM13. However, the disclosed technology is not limited to this, and the number of LP14s provided in the side wall of the EFEM13 may be more than five or less than five.

[0018] Each storage unit 130 houses substrates W before processing, substrates W after processing, and substrates W for cleaning, etc. The aligner unit 30 has the function of adjusting the orientation of the substrates W and the function of taking images of the peripheral edges on the back surface of the substrates W. The transport robot 131 transports the substrates W between the LLM 12, the storage unit 130, the aligner unit 30, and the container connected to the LP 14.

[0019] The control device 2 processes computer-executable instructions that cause the main body 10 of the substrate processing system 1 to perform the various processes described herein. The control device 2 may be configured to control each element of the main body 10 of the substrate processing system 1 to perform the various processes described herein. In one embodiment, some or all of the control device 2 may be included in the main body 10 of the substrate processing system 1. The control device 2 is implemented, for example, by a computer 2a. The control device 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions implemented by the processing unit 2a1 described herein may be implemented in a circuit or processing circuitry, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), conventional circuitry, and / or a combination thereof, programmed to implement the functions described herein. A processor is considered a circuit or processing circuit, including transistors and other circuitry. The processor may be a programmed processor that executes a program stored in the memory unit 2a2. This program may be pre-stored in the memory unit 2a2, or it may be retrieved via a medium when needed. The retrieved program is stored in the memory unit 2a2 and read from the memory unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, such as storage medium 2b, or it may be a communication line connected to the communication interface 2a3. The memory unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof.The communication interface 2a3 may communicate with the main body 10 of the board processing system 1 via a communication line such as a LAN (Local Area Network). In this disclosure, circuits, units, and means are hardware programmed to perform or configured to perform the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If such hardware is a processor that is considered to be a type of circuit, such circuit, means, or unit is a combination of hardware and software used to constitute such hardware and / or processor.

[0020] [PM20 Configuration] The following describes an example of a plasma processing system configuration. Figure 2 shows an example of a PM20 system.

[0021] In this embodiment, PM20 is, for example, a capacitively coupled plasma processing apparatus. PM20 includes a plasma processing chamber 210, a gas supply unit 220, a power supply system 230, and an exhaust system 240. PM20 also includes a substrate support unit 211 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 210. The gas introduction unit includes a shower head 213. The substrate support unit 211 is located inside the plasma processing chamber 210. The shower head 213 is located above the substrate support unit 211. In one embodiment, the shower head 213 constitutes at least a portion of the ceiling of the plasma processing chamber 210. The plasma processing chamber 210 has a plasma processing space 210s defined by the shower head 213, the side walls 210a of the plasma processing chamber 210, and the substrate support unit 211. The plasma processing chamber 210 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 210s, and at least one gas outlet for discharging gas from the plasma processing space. The plasma processing chamber 210 is grounded. The shower head 213 and the substrate support portion 211 are electrically insulated from the housing of the plasma processing chamber 210. An opening 210b is formed in the side wall 210a for loading and unloading the substrate W. The opening 210b is opened and closed by a gate valve G1.

[0022] The substrate support portion 211 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is placed on the central region 111a of the main body portion 111, and the ring assembly 112 is placed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0023] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The electrostatic chuck 1111 is an example of a stage. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is placed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic chuck electrode 1111b placed within the ceramic member 1111a. The electrostatic chuck electrode 1111b is also called a clamping electrode. In one embodiment, the electrostatic chuck electrode 1111b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC (Direct Current) power supply or an AC (Alternating Current) power supply. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Furthermore, other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or on both the electrostatic chuck 1111 and the annular insulating member. In addition, at least one bias electrode, electrically connected or coupled to the power supply 231 and / or power supply 232 described later, may be placed within the ceramic member 1111a. In this case, at least one bias electrode functions as a lower electrode. Also, the conductive member of the base 1110 and the bias electrode in the ceramic member 1111a may function as multiple lower electrodes. In one embodiment, the first voltage generation unit 232a, which functions as a voltage pulse generation unit described later, is electrically connected or coupled to the bias electrode in the ceramic member 1111a, and the first RF generation unit 231a, described later, is electrically connected or coupled to the conductive member of the base 1110. Furthermore, the electrostatic chuck electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 211 includes at least one lower electrode.

[0024] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0025] The substrate support section 211 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid, such as brine or gas, flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are arranged within the ceramic member 1111a of the electrostatic chuck 1111. The substrate support section 211 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0026] The showerhead 213 is configured to introduce at least one processing gas from the gas supply unit 220 into the plasma processing space 210s. The showerhead 213 has at least one gas supply port 213a, at least one gas diffusion chamber 213b, and a plurality of gas inlet ports 213c. The processing gas supplied to the gas supply port 213a passes through the gas diffusion chamber 213b and is introduced into the plasma processing space 210s through the plurality of gas inlet ports 213c. The showerhead 213 also includes at least one upper electrode. In addition to the showerhead 213, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 210a.

[0027] The gas supply unit 220 may include at least one gas source 221 and at least one flow controller 222. In one embodiment, the gas supply unit 220 is configured to supply at least one processing gas to the shower head 213 from a corresponding gas source 221 via a corresponding flow controller 222. Each flow controller 222 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 220 may include one or more flow modulation devices that modulate or pulse the flow rate of at least one processing gas.

[0028] The power supply system 230 includes a power supply 231 that is electrically connected to or coupled to the plasma processing chamber 210. In one embodiment, the power supply 231 is electrically connected to or coupled to the plasma processing chamber 210 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 231 is configured to supply at least one RF (Radio Frequency) signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 210s. Thus, the power supply 231 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 210. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W.

[0029] The power supply 231 includes a first RF generation unit 231a and a second RF generation unit 231b. The first RF generation unit 231a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode and is configured to generate a source RF signal (source RF power) to generate plasma in the plasma processing space 210s. In one embodiment, the first RF generation unit 231a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matcher. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0030] The second RF generation unit 231b is electrically connected to or coupled to at least one lower electrode and is configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generation unit 231b is electrically connected to or coupled to at least one lower electrode via at least one impedance matcher. If the first RF generation unit 231a is electrically connected to or coupled to a lower electrode, the second RF generation unit 231b may be electrically connected to or coupled to the same lower electrode, or it may be electrically connected to or coupled to a different lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a lower frequency than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 231b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0031] The power supply system 230 may also include a power supply 232 that is electrically connected to or coupled to the plasma processing chamber 210. The power supply 232 includes a first voltage generation unit 232a and a power supply 232b. In one embodiment, the first voltage generation unit 232a is electrically connected to or coupled to at least one lower electrode and configured to generate a first voltage signal. The generated first voltage signal is applied to at least one lower electrode. In one embodiment, the power supply 232b is electrically connected to or coupled to at least one upper electrode and configured to generate a second voltage signal. The generated second voltage signal is applied to at least one upper electrode.

[0032] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generator 232a and / or power supply 232b function as a voltage pulse generator configured to generate a sequence of voltage pulses. Thus, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses has multiple cycles, each cycle including a burst of voltage pulses in a first period and a constant reference voltage in a second period. That is, in the sequence of voltage pulses, the burst of voltage pulses is repeated. The absolute value of the voltage level of the voltage pulse is greater than the absolute value of the voltage level of the reference voltage. The voltage pulse may have an arbitrary waveform having a rectangular, trapezoidal, triangular, or a combination thereof, and the arbitrary waveform may change over time. The voltage pulse may have positive polarity or negative polarity. The sequence of voltage pulses may also include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. The first voltage generation unit 232a and the power supply 232b may be provided in addition to the power supply 231, and the first voltage generation unit 232a may be provided in place of the second RF generation unit 231b.

[0033] The exhaust system 240 may be connected to a gas outlet 210e located at the bottom of the plasma processing chamber 210, for example. The exhaust system 240 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure within the plasma processing space 210s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0034] [Configuration of Aligner Unit 30] Figure 3 shows an example of an aligner unit 30. The aligner unit 30 includes a camera 31, a rotating base 32, a light-emitting unit 33, and a light-receiving unit 34.

[0035] The rotating platform 32 supports the substrate W and rotates the substrate W. The light-emitting unit 33 emits light. The light-receiving unit 34 detects whether or not it has received light from the light-emitting unit 33 while the substrate W is rotating on the rotating platform 32. As a result, the control device 2 can detect the position of the notch on the substrate W with respect to the rotation angle of the substrate W, and can detect the rotation angle (direction) of the substrate W with respect to the notch.

[0036] Camera 31 photographs the peripheral edge of the back surface of the substrate W while the substrate W is rotating on the turntable 32. The captured image is sent to the control device 2. Camera 31 is an example of a sensor.

[0037] [Substrate Processing Method] Figure 4 is a flowchart showing an example of a substrate processing method in the first embodiment. Each step illustrated in Figure 4 is realized by the control device 2, which reads a program stored in the storage medium 2b, executing the read program and controlling each part of the main unit 10. The substrate processing method illustrated in Figure 4 is an example of a determination method.

[0038] First, the camera 31 of the aligner unit 30 captures a photograph of the peripheral edge of the back surface of the substrate W before processing (step S100). In step S100, the transport robot 131 unloads the substrate W from the container connected to LP14 and places it on the turntable 32 of the aligner unit 30. The turntable 32 then rotates, and the camera 31 captures a photograph of the peripheral edge of the back surface of the substrate W, and the control device 2 acquires the captured image. In step S100, the aligner unit 30 also adjusts the orientation of the substrate W.

[0039] In step S100, an image 40, such as that shown in Figure 5A, is acquired. Image 40 shows the notch 41 of the substrate W. Since no deposits are attached to the peripheral area of ​​the back surface of the substrate W before processing, no contamination due to deposits is observed in the area ΔL1 from the outer edge of the substrate W.

[0040] In this embodiment, in image 40, the surface without deposits appears whitish, while the surface of the substrate W with deposits appears dark. Therefore, in image 40, the pixel values ​​of pixels corresponding to the surface without deposits are larger, and the pixel values ​​of pixels corresponding to the surface with deposits are smaller. In this embodiment, the pixel value is the average value of the RGB values. Note that the pixel value may be other values ​​such as the clay scale value, as long as it can represent the degree of blackness.

[0041] Next, the substrate W is brought into the PM20 (step S101). Step S101 is an example of a). In step S101, the transport robot 131 transports the substrate W before processing from the aligner unit 30 to the LLM12. Then, the transport robot 110 in the VTM11 unloads the substrate W before processing from the LLM12 and brings it into the PM20. In this way, the substrate W is brought into the PM20 via the aligner unit 30. For this reason, the aligner unit 30 is located on the transport path of the substrate W.

[0042] Next, plasma processing is performed inside the PM20 (step S102). Step S102 is an example of b). In step S102, processing gas is supplied from the gas supply unit 220 to the plasma processing chamber 210, and RF signals etc. are supplied from the power supply system 230 to the plasma processing chamber 210, generating plasma inside the plasma processing chamber 210. Then, the substrate W is subjected to processing such as etching and film deposition by ions and active species contained in the generated plasma. In this embodiment, the processing gas contains carbon and fluorine.

[0043] Next, the substrate W is removed from inside the PM20 (step S103). Step S103 is an example of c). In step S103, the processed substrate W is removed from inside the PM20 by the transport robot 110 and loaded into the LLM12. Then, the processed substrate W is transported from the LLM12 to the aligner unit 30 by the transport robot 131.

[0044] Next, the camera 31 of the aligner unit 30 captures an image of the peripheral edge of the back surface of the processed substrate W (step S104). Step S104 is an example of d). In step S104, an image 40, such as the one shown in Figure 5B, is acquired. Deposits accumulate on the electrostatic chuck 1111 of the PM20 due to the plasma treatment. In particular, deposits tend to accumulate below the peripheral edge of the substrate W. Therefore, deposits accumulated on the electrostatic chuck 1111 adhere to the peripheral edge of the back surface of the processed substrate W. In the example in Figure 5B, dirt due to deposit adhesion can be seen within a range of ΔL1 from the outer edge of the substrate W.

[0045] Next, the difference between the image 40 before and after processing is calculated (step S105). In step S105, for example, the average value of the pixel values ​​within a range of ΔL1 from the outer edge of the substrate W is calculated for the image 40 acquired in step S100 and the image 40 acquired in step S104. Then, the difference between the average value calculated for the image 40 acquired in step S100 and the average value calculated for the image 40 acquired in step S104 is calculated.

[0046] Here, the amount of deposits deposited on the electrostatic chuck 1111 of PM20 increases with the length of the plasma processing time. Therefore, as the number of plasma processing cycles increases, the amount of deposits adhering to the peripheral edge of the back surface of the substrate W after processing also increases. When the amount of deposits adhering to the substrate W increases, for example, as shown in Figure 5C, a larger area within a range of ΔL1 from the outer edge of the substrate W becomes darker. Also, the thicker the deposits adhering to the peripheral edge of the back surface of the substrate W, the closer the color of the deposits shown in image 40 approaches black. As a result, the larger the amount of deposits adhering to the substrate W, the smaller the pixel value at the peripheral edge of the back surface of the substrate W becomes.

[0047] Therefore, as shown in Figure 6, for example, the more times plasma processing is performed and the more deposits adhere to the peripheral area on the back surface of the substrate W, the larger the difference in the average pixel values ​​in the image 40 before and after processing becomes.

[0048] Next, it is determined whether the difference has reached a predetermined threshold (step S106). Step S106 is an example of e). In step S106, the difference in the average pixel values ​​in the image 40 before and after processing is determined to reach a threshold D, for example, as shown in Figure 6. th1 It is determined whether or not the threshold D has been reached. In the example in Figure 6, for the substrate W that has undergone N1 plasma treatment since the previous cleaning, the difference in the average pixel values ​​in image 40 is the threshold D. th1 It has reached its limit.

[0049] If the difference does not reach the threshold (step S106: No), it is determined whether or not to terminate the processing of substrate W (step S108). If the processing of substrate W is not terminated (step S108: No), the process shown in step S100 is executed again. If the processing of substrate W is terminated (step S108: Yes), the substrate processing method shown in this flowchart is terminated.

[0050] On the other hand, if the difference reaches a threshold (step S106: Yes), cleaning is performed inside the plasma processing chamber 210 (step S107). Cleaning inside the plasma processing chamber 210 is an example of maintenance. Then, the process shown in step S108 is performed. In step S107, dry cleaning is performed using an oxygen-containing gas. In this embodiment, the dry cleaning performed in step S107 is WLDC (Wafer Less Dry Cleaning). Note that the dry cleaning performed in step S107 may also be WWDC (With Wafer Dry Cleaning) using a cleaning substrate W.

[0051] The first embodiment has been described above. As described above, the substrate processing system (substrate processing system 1) in this embodiment comprises a process module (PM20) that performs plasma processing, a vacuum transport module (VTM11) having a transport robot (transport robot 110) that loads and unloads substrates into and out of the process module, a sensor (camera 31) provided on the transport path of the substrate, and a control device (control device 2). The control device executes a) (step S101), b) (step S102), c) (step S103), d) (step S105), and e) (step S106). In a), the transport robot is controlled to load the substrate into the process module. In b), the process module is controlled to perform plasma processing inside the process module. In c), the transport robot is controlled to unload the substrate from inside the process module. In d), the sensor is controlled to acquire an image of the peripheral edge of the back surface of the substrate. In e), based on the acquired image, it is determined whether or not to perform maintenance processing. This allows us to determine when maintenance is due.

[0052] Furthermore, in the first embodiment described above, the control device determines in e) whether or not to perform maintenance based on the difference between the image of the peripheral edge of the back surface of the substrate before b) is performed and the image of the peripheral edge of the back surface of the substrate acquired in d). This makes it possible to accurately determine the timing of maintenance.

[0053] Furthermore, in the first embodiment described above, the difference is the average value of the RGB values ​​or the difference in the grayscale values ​​for each pixel. This makes it possible to accurately determine the state of deposits adhering to the peripheral edge on the back surface of the substrate.

[0054] Furthermore, in the first embodiment described above, the maintenance process is a process of dry cleaning the inside of the chamber (plasma processing chamber 210) of the process module using an oxygen-containing gas. This allows the inside of the chamber of the process module to be dry cleaned at a predetermined timing.

[0055] Furthermore, in the first embodiment described above, the dry cleaning process is WLDC (Wafer Less Dry Cleaning). This allows dry cleaning to be performed while protecting the electrostatic chuck 1111 inside the chamber of the process module.

[0056] Furthermore, the first embodiment described above is a determination method in a substrate processing system comprising a process module for plasma processing, a vacuum transport module having a transport robot for loading and unloading substrates into and out of the process module, a sensor provided on the transport path of the substrate, and a control device, wherein the control device performs a), b), c), d), and e). In a), the transport robot is controlled to load the substrate into the process module. In b), the process module is controlled to perform plasma processing within the process module. In c), the transport robot is controlled to unload the substrate from the process module. In d), the sensor is controlled to acquire an image of the peripheral edge of the back surface of the substrate. In e), based on the acquired image, it is determined whether or not to perform maintenance processing. This makes it possible to determine when maintenance is needed.

[0057] Furthermore, the first embodiment described above is a program for controlling a substrate processing system comprising a process module for plasma processing, a vacuum transport module having a transport robot for loading and unloading substrates into and out of the process module, a sensor provided on the transport path of the substrate, and a control device, wherein the control device is instructed to execute a), b), c), d), and e). In a), the transport robot is controlled to load the substrate into the process module. In b), the process module is controlled to perform plasma processing within the process module. In c), the transport robot is controlled to unload the substrate from the process module. In d), the sensor is controlled to acquire an image of the peripheral edge of the back surface of the substrate. In e), it is determined whether or not to perform maintenance processing based on the acquired image. This makes it possible to determine when maintenance is needed.

[0058] Furthermore, the first embodiment described above is a storage medium that stores a program for controlling a substrate processing system comprising a process module for plasma processing, a vacuum transport module having a transport robot for loading and unloading substrates into and out of the process module, a sensor provided on the transport path of the substrate, and a control device, and stores instructions for the control device to execute a), b), c), d), and e). In a), the transport robot is controlled to load the substrate into the process module. In b), the process module is controlled to perform plasma processing within the process module. In c), the transport robot is controlled to unload the substrate from the process module. In d), the sensor is controlled to acquire an image of the peripheral edge of the back surface of the substrate. In e), it is determined whether or not to perform maintenance processing based on the acquired image. This makes it possible to determine when maintenance is needed.

[0059] In the first embodiment described above, each time the substrate W is processed, an image of the peripheral edge of the back surface of the substrate W before processing and an image of the peripheral edge of the back surface of the substrate W after processing are taken, and the need for maintenance is determined based on the difference between these images. As a result, even if some deposits are attached to the peripheral edge of the back surface of the substrate W in the previous process, the need for maintenance of the PM20 used in the current processing process can be determined with high accuracy.

[0060] If it is clear that no deposits are attached to the peripheral edge of the back surface of the substrate W before processing, a pre-prepared image may be used instead of an image of the peripheral edge of the back surface of the substrate W before processing, and the process of photographing the peripheral edge of the back surface of the substrate W before processing may be omitted.

[0061] (Second embodiment) In the first embodiment, the decision to perform cleaning was based on the difference between an image 40 of the substrate W before plasma treatment and an image 40 of the substrate W after plasma treatment. In contrast, in the second embodiment, the decision to perform cleaning is based on the difference between images 40 of two substrates W that have undergone consecutive plasma treatment. The following will focus on the differences from the first embodiment.

[0062] Figure 7 is a flowchart showing an example of a substrate processing method in the second embodiment. Each step illustrated in Figure 7 is realized by the control device 2 controlling each part of the main body 10.

[0063] First, the substrate W is loaded into the PM20 (step S200). In step S200, the transport robot 131 unloads the substrate W from the container connected to the LP14 and transports it to the aligner unit 30, where the orientation of the substrate W is adjusted. Then, the transport robot 131 transports the substrate W from the aligner unit 30 to the LLM12. Finally, the transport robot 110 in the VTM11 loads the substrate W from the LLM12 into the PM20.

[0064] Next, plasma processing is performed inside the PM20 (step S201). Then, the substrate W is removed from inside the PM20 (step S202). In step S202, the processed substrate W is removed from inside the PM20 by the transport robot 110 and transported to the LLM12. Then, the processed substrate W is transported from the LLM12 to the aligner unit 30 by the transport robot 131.

[0065] Next, the camera 31 of the aligner unit 30 captures an image of the peripheral edge of the back surface of the processed substrate W (step S203). The image 40 captured in step S203 is sent to the control device 2. Then, the transport robot 131 transports the processed substrate W from the aligner unit 30 into a container connected to the storage unit 130 or LP14.

[0066] Next, another substrate W is brought into the PM20 (step S204), and plasma processing is performed inside the PM20 (step S205). Then, the substrate W is removed from inside the PM20 (step S206), and the peripheral edge of the back surface of the processed substrate W is photographed by the camera 31 of the aligner unit 30 (step S207). Step S204 is an example of a), step S205 is an example of b), step S206 is an example of c), and step S207 is an example of d).

[0067] Next, the difference between the current image and the previous image 40 of the substrate W is calculated (step S208). In step S208, the average value of the pixel values ​​within a range of ΔL1 from the outer edge of the substrate W is calculated for the previous image 40 of the substrate W (for example, the image 40 acquired in step S203) and the image 40 acquired in step S207. Then, the difference between the average value calculated for the previous image 40 of the substrate W and the average value calculated for the image 40 acquired in step S207 is calculated.

[0068] Here, when the amount of deposit adhering to the peripheral edge of the back surface of substrate W after processing is small, the color change of the peripheral edge of the back surface of substrate W is large. However, when the amount of deposit increases, the color of the peripheral edge of the back surface of substrate W becomes closer to the color of the deposit itself, and the color change becomes smaller. Therefore, the difference in image 40 decreases as the number of processing cycles of substrate W increases, as shown in Figure 8, for example.

[0069] Next, it is determined whether the difference has reached a predetermined threshold (step S209). Step S209 is an example of e). In step S209, the difference in the average values ​​of the pixel values ​​in the images 40 of two consecutive substrates W is determined to reach a threshold D, for example, as shown in Figure 8. th2 It is determined whether or not the threshold D has been reached. In the example in Figure 8, for the substrate W that has undergone N2 plasma processing since the previous cleaning, the difference in the average pixel values ​​in image 40 is the threshold D. th12 It has reached its limit.

[0070] If the difference does not reach the threshold (step S209: No), it is determined whether or not to terminate the processing of substrate W (step S211). If the processing of substrate W is not terminated (step S211: No), the process shown in step S204 is executed again. If the processing of substrate W is terminated (step S211: Yes), the substrate processing method shown in this flowchart is terminated.

[0071] On the other hand, if the difference reaches a threshold (step S209: Yes), cleaning is performed inside the plasma processing chamber 210 (step S210). Then, the process shown in step S211 is performed.

[0072] The second embodiment has been described above. As described above, in this embodiment, steps a) to e) are performed repeatedly. In step e), the control device determines whether or not to perform maintenance on each pixel based on the difference between the image of the peripheral edge of the back surface of the substrate acquired in the previous step d) and the image of the peripheral edge of the back surface of the substrate acquired in the next step d). The timing of maintenance can also be determined by this method.

[0073] In the second embodiment described above, the decision to perform cleaning is made based on the difference between images 40 of two substrates W that have been subjected to consecutive plasma processing, but the disclosed technology is not limited to this. As another example, the decision to perform cleaning may be made based on the cumulative value of the difference between images 40 of two substrates W that have been subjected to consecutive plasma processing. Specifically, as shown in Figure 9, for example, the difference between images 40 of two substrates W that have been subjected to consecutive plasma processing is accumulated, and the cumulative value is set to a predetermined threshold A th1 When this value is reached, it may be determined that cleaning should be performed. In the example in Figure 9, in the substrate W that has undergone the N3rd plasma treatment since the previous cleaning, the cumulative difference in image 40 is the threshold A. th11 It has reached this point. This method can also be used to determine when maintenance is needed.

[0074] (Third embodiment) In the above-described embodiment, the decision of whether or not to clean the PM20 was made using an image 40 of the substrate W after plasma treatment. In contrast, in the third embodiment, the timing for replacing the cleaning substrate W is determined based on an image 40 of the cleaning substrate W after WWDC has been performed. The following will focus on the differences from the first and second embodiments.

[0075] Figure 10 is a flowchart showing an example of a substrate processing method in the third embodiment. Each step illustrated in Figure 10 is realized by the control device 2 controlling each part of the main body 10.

[0076] First, the substrate W is loaded into the PM20 (step S300). In step S300, the transport robot 131 unloads the substrate W from the container connected to the LP14 and transports it to the aligner unit 30, where the orientation of the substrate W is adjusted. Then, the transport robot 131 transports the substrate W from the aligner unit 30 to the LLM12. Finally, the transport robot 110 in the VTM11 loads the substrate W from the LLM12 into the PM20.

[0077] Next, plasma processing is performed inside the PM20 (step S301). Then, the substrate W is removed from inside the PM20 (step S302). In step S302, the processed substrate W is removed from inside the PM20 by the transport robot 110 and transported to the LLM12. Then, the processed substrate W is transported from the LLM12 to a container connected to the storage unit 130 or LP14 by the transport robot 131.

[0078] Next, it is determined whether or not to perform cleaning (step S303). In step S303, for example, if the number of processed substrates W reaches a predetermined number, it is determined to perform cleaning.

[0079] If cleaning is not performed (step S303: No), the process shown in step S300 is executed again.

[0080] On the other hand, if cleaning is to be performed (step S303: Yes), the cleaning substrate W is brought into the PM20 (step S304), and cleaning is performed inside the PM20 (step S305). The cleaning performed in step S305 is a WWDC using the cleaning substrate W, and is a plasma-based WWDC. Then, the cleaning substrate W is removed from inside the PM20 (step S306), and the peripheral edge of the back surface of the cleaning substrate W is photographed by the camera 31 of the aligner unit 30 (step S307). Step S304 is an example of a), step S305 is an example of b), step S306 is an example of c), and step S307 is an example of d).

[0081] Next, the difference between the current image and the image 40 of the cleaning substrate W used in the previous cleaning is calculated (step S308). In step S308, the average value of the pixel values ​​within a range of ΔL1 from the outer edge is calculated for both the image of the cleaning substrate W taken in the previous step S307 and the image of the cleaning substrate W taken in the current step S307. Then, the difference between the average value calculated for the image of the cleaning substrate W taken in the previous step S307 and the average value calculated for the image of the cleaning substrate W taken in the current step S307 is calculated.

[0082] Here, if WWDC is repeated using the same cleaning substrate W, the amount of deposits adhering to the peripheral edges of the back surface of the cleaning substrate W increases. When the amount of deposits adhering to the peripheral edges of the back surface of the cleaning substrate W increases, the color of the peripheral edges of the back surface of the cleaning substrate W becomes closer to the color of the deposits themselves, and the color change becomes smaller.

[0083] Next, it is determined whether the difference has reached a predetermined threshold (step S309). Step S309 is an example of e). If the difference has not reached the threshold (step S309: No), it is determined whether to terminate the processing of substrate W (step S311). If the processing of substrate W is not terminated (step S311: No), the process shown in step S300 is executed again. If the processing of substrate W is terminated (step S311: Yes), the substrate processing method shown in this flowchart is terminated.

[0084] On the other hand, if the difference reaches a threshold (step S309: Yes), the cleaning substrate W is replaced (step S310), and the process shown in step S311 is executed. Replacing the cleaning substrate W is an example of maintenance. In addition, in step S310, further cleaning of the PM20 (e.g., WLDC) may be performed.

[0085] The third embodiment has been described above. As described above, in this embodiment, steps a) to e) are repeatedly performed, and the plasma treatment performed in the chamber of the process module in step b) is WWDC. The substrate is a cleaning substrate placed on the stage in the chamber during WWDC, and the same cleaning substrate is used multiple times as steps a) to e) are repeatedly performed. The maintenance process is the process of replacing the cleaning substrate. This makes it possible to determine when maintenance, specifically the replacement of the cleaning substrate W, is required.

[0086] (Fourth embodiment) In each of the embodiments described above, the timing of maintenance is determined using the difference in the average pixel values ​​of the image 40 of the peripheral edge of the back surface of the substrate W to be processed or the substrate W for cleaning. In contrast, in the fourth embodiment, the timing of maintenance is determined based on the width of the range in which the average pixel values ​​from the image 40 of the peripheral edge of the back surface of the processed substrate W are greater than or equal to a predetermined value.

[0087] If a large amount of deposit accumulates on the peripheral edge of the upper surface of the electrostatic chuck 1111, the deposit may get trapped between the substrate W and the electrostatic chuck 1111 when the substrate W is placed on it before processing. In such cases, a gap is created between the substrate W and the electrostatic chuck 1111, and the suction between the substrate W and the electrostatic chuck 1111 does not occur properly. If the suction between the substrate W and the electrostatic chuck 1111 does not occur properly, heat exchange between the substrate W and the electrostatic chuck 1111 does not occur properly. As a result, the temperature distribution of the substrate W becomes uneven, and the quality variation of semiconductor devices manufactured using the substrate W increases. Therefore, if the suction between the substrate W and the electrostatic chuck 1111 does not occur properly, maintenance such as removing the deposit between the substrate W and the electrostatic chuck 1111 becomes necessary.

[0088] Here, if a gap occurs between the substrate W and the electrostatic chuck 1111, active species and other substances contained in the plasma used to process the substrate W can easily enter the gap between the substrate W and the electrostatic chuck 1111. As a result, as shown in Figure 11, for example, a large amount of deposit will adhere to the back surface of the substrate W corresponding to the gap between the substrate W and the electrostatic chuck 1111. In the example in Figure 11, the width of the deposit is large at the position on the back surface of the substrate W corresponding to the gap between the substrate W and the electrostatic chuck 1111. Therefore, in this embodiment, the timing of maintenance is determined based on the width of the range in which the average value of the pixel values ​​is greater than or equal to a predetermined value in the image 40 of the peripheral edge of the back surface of the substrate W.

[0089] Figure 12 is a flowchart showing an example of a substrate processing method in the fourth embodiment. Each step illustrated in Figure 12 is realized by the control device 2 controlling each part of the main body 10.

[0090] First, the substrate W is brought into the PM20 (step S400), and plasma processing is performed inside the PM20 (step S401). Then, the substrate W is removed from inside the PM20 (step S402), and the peripheral edge of the back surface of the processed substrate W is photographed by the camera 31 of the aligner unit 30 (step S403). In step S403, an image 40 like the one shown in Figure 11 is acquired. Step S400 is an example of a), step S401 is an example of b), step 402 is an example of c), and step S403 is an example of d).

[0091] Next, the deposit width is calculated (step S404). In step S404, in the image 40 of the substrate W after processing, areas where the pixel value is greater than or equal to a predetermined value are identified. Then, for the identified areas, the radial width (for example, the maximum value) of the substrate W is calculated as the deposit width. In the example in Figure 11, ΔL2 is calculated as the deposit width. Note that the deposit width may be the average value of the widths of the areas where the pixel value is greater than or equal to a predetermined value, or it may be the difference between the maximum and minimum values ​​of the widths of the areas where the pixel value is greater than or equal to a predetermined value.

[0092] Next, it is determined whether the width of the deposit exceeds a predetermined threshold (step S405). Step S405 is an example of e). If the width of the deposit does not exceed the threshold (step S405: No), it is determined whether to terminate the processing of substrate W (step S407). If the processing of substrate W is not terminated (step S407: No), the process shown in step S400 is executed again. If the processing of substrate W is terminated (step S407: Yes), the substrate processing method shown in this flowchart is terminated.

[0093] On the other hand, if the deposit width exceeds a threshold (step S405: Yes), an error is notified to the user of the substrate processing system 1 (step S406), and the substrate processing method shown in this flowchart is terminated. In step S406, an error may be notified to the user of the substrate processing system 1, and the PM20 may be cleaned (e.g., WLDC), after which the process in step S407 may be executed.

[0094] The fourth embodiment has been described above. As described above, in this embodiment, in e), the control device calculates the width of the reaction product in the radial direction of the substrate from the image of the peripheral edge of the back surface of the substrate acquired in d), and notifies the user of the substrate processing system of an error if the average or maximum value of the calculated width exceeds a predetermined value. This makes it possible to determine when maintenance is needed to resolve the adsorption abnormality between the substrate W and the electrostatic chuck 1111.

[0095] [others] Furthermore, the technology disclosed in this application is not limited to the embodiments described above, and numerous modifications are possible within the scope of its essence.

[0096] For example, in each of the embodiments described above, the camera 31 for photographing the peripheral edge of the back surface of the substrate W or the substrate W for cleaning is located within the EFEM 13, but the disclosed technology is not limited thereto. In another example, the camera 31 for photographing the peripheral edge of the back surface of the substrate W may be located within the VTM 11 or LLM 12.

[0097] Furthermore, the fourth embodiment described above may be combined with the first to third embodiments described above. For example, in the image 40 shown in Figure 5B, even if the difference in the average values ​​of pixels within a range of ΔL1 from the outer edge of the substrate W does not reach a threshold, if the maximum value of the deposit width exceeds the threshold, an error may be notified to the user of the substrate processing system 1.

[0098] Furthermore, in the embodiments described above, a capacitively coupled plasma was explained as an example of a plasma source used in PM20, but the plasma source is not limited to this. Examples of plasma sources other than capacitively coupled plasma include inductively coupled plasma (ICP), microwave-excited surface wave plasma (SWP), electron cyclotron resonance plasma (ECP), and helicon wave-excited plasma (HWP).

[0099] It should be noted that the embodiments disclosed herein are illustrative and not restrictive in all respects. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0100] Furthermore, the following additional information is disclosed regarding the above embodiments.

[0101] (Note 1) A process module that performs plasma processing, A vacuum transfer module having a transfer robot for loading and unloading substrates into and out of the process module, A sensor provided on the transport path of the substrate, Control device and Equipped with, The control device is a) Controlling the transport robot to load the substrate into the process module, b) Controlling the process module to perform plasma processing within the process module, c) Controlling the transport robot to remove the substrate from the process module, d) Controlling the sensor to acquire an image of the peripheral edge of the back surface of the substrate, e) To determine whether or not to perform maintenance based on the image. A substrate processing system that performs this task. (Note 2) The control device is The substrate processing system according to Appendix 1, wherein, in e) above, a determination is made whether or not to perform maintenance processing based on the difference between an image of the peripheral edge of the back surface of the substrate before b) is performed and an image of the peripheral edge of the back surface of the substrate acquired in d). (Note 3) Steps a) through e) above are repeated, The control device is The substrate processing system according to Appendix 1, wherein, in e) above, for each pixel, a determination is made as to whether or not to perform maintenance processing based on the difference between the image of the peripheral edge of the back surface of the substrate acquired in the previous d) above and the image of the peripheral edge of the back surface of the substrate acquired in the next d). (Note 4) The control device is The substrate processing system described in Appendix 3, wherein, in e) above, a determination is made whether or not to perform maintenance processing based on the cumulative value of the difference. (Note 5) The substrate processing system described in any one of the appendices 2 to 4, wherein the difference is the average value of the RGB values ​​or the difference in the grayscale values ​​at each pixel. (Note 6) The substrate processing system according to any one of the appendices 1 to 5, wherein the maintenance process is a process of dry cleaning the inside of the chamber of the process module using an oxygen-containing gas. (Note 7) The aforementioned dry cleaning process is WLDC (Wafer Less Dry Cleaning), as described in Appendix 6 of the substrate processing system. (Note 8) Steps a) through e) above are repeated, In (b) above, the plasma treatment performed in the chamber of the process module is WWDC (With Wafer Dry Cleaning), The aforementioned substrate is a cleaning substrate that is placed on the stage inside the chamber during the WWDC. As steps a) through e) are repeatedly performed, the same cleaning substrate is used multiple times. The aforementioned maintenance process is a process of replacing the cleaning substrate, as described in any one of the appendices 1 to 7, for the substrate processing system. (Note 9) The control device is A substrate processing system according to any one of the appendices 1 to 8, wherein, in e) above, the width of the reaction product in the radial direction of the substrate is calculated from the image of the peripheral edge of the back surface of the substrate obtained in d), and if the average or maximum value of the calculated width exceeds a predetermined value, an error is notified to the user of the substrate processing system. (Note 10) Further equipped with a load lock module and an atmospheric transport module, The substrate processing system according to any one of the appendices 1 to 9, wherein the sensor is provided within the vacuum transport module, the load lock module, or the atmospheric transport module. (Note 11) A process module that performs plasma processing, A vacuum transfer module having a transfer robot for loading and unloading substrates into and out of the process module, A sensor provided on the transport path of the substrate, Control device and A determination method in a substrate processing system comprising: The control device, a) Controlling the transport robot to load the substrate into the process module, b) Controlling the process module to perform plasma processing within the process module, c) Controlling the transport robot to remove the substrate from the process module, d) Controlling the sensor to acquire an image of the peripheral edge of the back surface of the substrate, e) To determine whether or not to perform maintenance based on the image. A method for determining whether to execute a command. (Note 12) A process module that performs plasma processing, A vacuum transfer module having a transfer robot for loading and unloading substrates into and out of the process module, A sensor provided on the transport path of the substrate, Control device and A program for controlling a substrate processing system comprising: The control device, a) Controlling the transport robot to load the substrate into the process module, b) Controlling the process module to perform plasma processing within the process module, c) Controlling the transport robot to remove the substrate from the process module, d) Controlling the sensor to acquire an image of the peripheral edge of the back surface of the substrate, e) To determine whether or not to perform maintenance based on the image. A program that executes the command. (Note 13) A process module that performs plasma processing, A vacuum transfer module having a transfer robot for loading and unloading substrates into and out of the process module, A sensor provided on the transport path of the substrate, Control device and A storage medium that stores a program for controlling a substrate processing system comprising the following: The control device, a) Controlling the transport robot to load the substrate into the process module, b) Controlling the process module to perform plasma processing within the process module, c) Controlling the transport robot to remove the substrate from the process module, d) Controlling the sensor to acquire an image of the peripheral edge of the back surface of the substrate, e) To determine whether or not to perform maintenance based on the image. A storage medium that stores a program to execute. [Explanation of Symbols]

[0102] G Gate Valve W board 1. Substrate Processing System 2 Control device 2a Computer 2a1 Processing Unit 2a2 Storage section 2a3 communication interface 2b Storage medium 10 Main Unit 11 VTM 110 Transport robots 12 LLM 13 EFEM 130 storage units 131 Transport robots 14 LP 8 PM 210 Plasma Processing Chamber 210a side wall 210b aperture 210e Gas outlet 210s Plasma Processing Space 211 Substrate support section 111 Main body 111a Central area 111b Circular region 1110 base 1111 Electrostatic Chuck 1111a Ceramic component 1111b Electrostatic chuck electrode 112 Ring Assembly 213 Shower head 213a Gas supply port 213b Gas Diffusion Chamber 213c Gas inlet 220 Gas Supply Department 221 Gas Source 222 Flow controller 230 Power Systems 231 Power supply 231a First RF generation unit 231b Second RF generation unit 232 Power supply 232a First voltage generation unit 240 Exhaust System 30 Aligner Units 31 Camera 32 Rotating Platforms 33 Light-emitting part 34 Light receiving part 40 images 41 Notches

Claims

1. A process module that performs plasma processing, A vacuum transfer module having a transfer robot for loading and unloading substrates into and out of the process module, A sensor provided on the transport path of the substrate, Control device and Equipped with, The control device is a) Controlling the transport robot to load the substrate into the process module, b) Controlling the process module to perform plasma processing within the process module, c) Controlling the transport robot to remove the substrate from the process module, d) Controlling the sensor to acquire an image of the peripheral edge of the back surface of the substrate, e) To determine whether or not to perform maintenance based on the image. A substrate processing system that performs this task.

2. The control device is The substrate processing system according to claim 1, wherein, in e) above, a determination is made whether or not to perform maintenance processing based on the difference between an image of the peripheral edge of the back surface of the substrate before b) is performed and an image of the peripheral edge of the back surface of the substrate obtained in d).

3. Steps a) through e) above are repeated, The control device is The substrate processing system according to claim 1, wherein, in e) above, for each pixel, it is determined whether or not to perform maintenance processing based on the difference between the image of the peripheral edge of the back surface of the substrate acquired in the previous d) above and the image of the peripheral edge of the back surface of the substrate acquired in the next d) above.

4. The control device is The substrate processing system according to claim 3, wherein, in e) above, it is determined whether or not to perform maintenance processing based on the cumulative value of the difference.

5. The substrate processing system according to any one of claims 2 to 4, wherein the difference is the average value of the RGB values ​​or the difference in the grayscale values ​​at each pixel.

6. The substrate processing system according to claim 1, wherein the maintenance process is a process of dry cleaning the inside of the chamber of the process module using an oxygen-containing gas.

7. The substrate processing system according to claim 6, wherein the dry cleaning process is WLDC (Wafer Less Dry Cleaning).

8. Steps a) through e) above are repeated, In (b) above, the plasma treatment performed in the chamber of the process module is WWDC (With Wafer Dry Cleaning), The substrate is a cleaning substrate that is placed on the stage inside the chamber during the WWDC, As steps a) through e) are repeatedly performed, the same cleaning substrate is used multiple times. The substrate processing system according to claim 1, wherein the maintenance process is a process of replacing the cleaning substrate.

9. The control device is The substrate processing system according to claim 1, wherein, in e) above, the width of the reaction product in the radial direction of the substrate is calculated from the image of the peripheral edge of the back surface of the substrate obtained in d), and if the average or maximum value of the calculated width exceeds a predetermined value, an error is notified to the user of the substrate processing system.

10. Further equipped with a load lock module and an atmospheric transport module, The substrate processing system according to claim 1, wherein the sensor is provided in the vacuum transport module, the load lock module, or the atmospheric transport module.

11. A process module that performs plasma processing, A vacuum transfer module having a transfer robot for loading and unloading substrates into and out of the process module, A sensor provided on the transport path of the substrate, Control device and A determination method in a substrate processing system comprising: The control device, a) Controlling the transport robot to load the substrate into the process module, b) Controlling the process module to perform plasma processing within the process module, c) Controlling the transport robot to remove the substrate from the process module, d) Controlling the sensor to acquire an image of the peripheral edge of the back surface of the substrate, e) To determine whether or not to perform maintenance based on the image. A method for determining whether to execute a command.

12. A process module that performs plasma processing, A vacuum transfer module having a transfer robot for loading and unloading substrates into and out of the process module, A sensor provided on the transport path of the substrate, Control device and A program for controlling a substrate processing system comprising: The control device, a) Controlling the transport robot to load the substrate into the process module, b) Controlling the process module to perform plasma processing within the process module, c) Controlling the transport robot to remove the substrate from the process module, d) Controlling the sensor to acquire an image of the peripheral edge of the back surface of the substrate, e) To determine whether or not to perform maintenance based on the image. A program that executes the command.

13. A process module that performs plasma processing, A vacuum transfer module having a transfer robot for loading and unloading substrates into and out of the process module, A sensor provided on the transport path of the substrate, Control device and A storage medium that stores a program for controlling a substrate processing system comprising the following: The control device, a) Controlling the transport robot to load the substrate into the process module, b) Controlling the process module to perform plasma processing within the process module, c) Controlling the transport robot to remove the substrate from the process module, d) Controlling the sensor to acquire an image of the peripheral edge of the back surface of the substrate, e) To determine whether or not to perform maintenance based on the image. A storage medium that stores a program to execute.

Images