Information processing device, information processing method, and program

Abstract

The objective is to provide a system that can calculate the absorbance distribution of a resin layer based on the absorbance distribution calculated by separating scattered and unscattered light, thereby enabling highly accurate prediction of the patterning shape and other properties when an exposure and development process is performed on the resin layer. [Solution] Absorbance distribution of the scattering component of the resin layer E scat A first calculation unit that calculates the absorbance distribution E of the non-scattering component of the resin layer. wave A second calculation unit that calculates the absorbance distribution E scat and the absorbance distribution E wave Based on this, the light absorption distribution E of the resin layer total An information processing device having a third calculation unit that calculates a value.

Description

[Technical Field]

[0001] This invention relates to an information processing device, an information processing method, and a program. [Background technology]

[0002] Photosensitive resin compositions are materials used as insulating films that cover the surface of printed circuit boards and protect circuit patterns, or as materials used in circuit formation on boards. They play roles such as preventing solder from adhering to unnecessary areas during component mounting, and preventing plating from adhering to unnecessary areas during circuit formation.

[0003] Such photosensitive resin compositions can be used to form fine patterns by, for example, exposing a substrate, on which the photosensitive resin composition is formed over its entire surface, through a negative or positive film, or by exposing it without a mask, and then developing the parts soluble in a developer solution. However, obtaining the desired pattern requires the expertise of a skilled professional in designing the composition of the photosensitive resin composition and adjusting the exposure and development process conditions, and predicting the result has not been easy. Therefore, there is a need for a technique to predict the pattern shape of a photosensitive resin composition in advance.

[0004] In order to predict the pattern shape obtained by pattern exposure on a photosensitive resin composition, it is important to accurately predict how the light irradiated onto the photosensitive resin composition is absorbed within the composition, i.e., the absorbance distribution. In this regard, for example, in the field of resist materials formed on semiconductor wafers, the technique described in Patent Document 1 is known as a technique for calculating the energy storage distribution when a resist material is irradiated with an electron beam. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2005-242710 [Overview of the project] [Problems that the invention aims to solve]

[0006] However, in the case of photosensitive resin compositions that are scatterers (e.g., solder resist), it was sometimes not possible to apply the techniques used to calculate the absorbance distribution and energy storage distribution used in resist materials.

[0007] Specifically, since the resist material formed on a semiconductor wafer does not contain scattering components such as inorganic fillers, organic fillers, or pigments, when irradiating the resist material with ultraviolet light, only the light absorption of non-scattering components is usually considered, and sufficient consideration has not been given to calculating the absorbance distribution that takes light scattering into account.

[0008] When a material is a scatterer, light is scattered during pattern exposure, making it difficult to reproduce the shape after curing as designed. The inventors have found a technique to predict the effects of such scattering by calculating the absorbance distribution inside the material based on geometric optics light propagation calculations. However, in order to accurately predict how pattern exposure will affect the final pattern shape, the absorbance distribution must be evaluated considering not only the effects of scattered light but also those of non-scattered light. In particular, the method based on geometric optics light propagation calculations that only consider scattered light cannot adequately reflect the effect of focus shift of the exposure device inside the material, and a new challenge has been identified: it is difficult to apply to exposure at high numerical aperture (NA) or to materials with low scattering.

[0009] This invention has been made in view of the above-mentioned problems, and aims to provide a system that can calculate the absorbance distribution of a resin layer considering the effects of scattered and unscattered light. [Means for solving the problem]

[0010] An information processing device according to one aspect of the present invention is: Absorbance distribution of scattering components in the resin layer E scat A first calculation unit that calculates, Absorbance distribution E of the non-scattering component of the resin layer waveA second calculation unit that calculates, Absorbance distribution E scat and the absorbance distribution E wave Based on this, the light absorption distribution E of the resin layer total It has a third calculation unit that calculates and [Effects of the Invention]

[0011] According to the present invention, a system can be provided that can calculate the absorbance distribution of a resin layer, taking into account the effects of scattered and unscattered light. [Brief explanation of the drawing]

[0012] [Figure 1A] This is a schematic diagram showing the configuration of the system in this embodiment. [Figure 1B] This is a schematic diagram of the hardware and functional configuration of the information processing device of this embodiment. [Figure 2A] This is a conceptual diagram illustrating a method for calculating the absorbance distribution Etotal based on the absorbance distribution Escat (scattered component) and the absorbance distribution Ewave (non-scattered component). [Figure 2B] This is a conceptual diagram illustrating the calculation of the absorbance distribution Escat for the scattered component and the absorbance distribution Ewave for the non-scattered component based on the light that reaches the interface Fn. [Figure 2C] This is a conceptual diagram illustrating the relationship between light absorbed in layer Ln, light transmitted through layer Ln to layer Ln+1, and light scattered for the first time in layer Ln. [Figure 3] This is a flowchart showing the process for calculating the absorbance distribution Etotal. [Modes for carrying out the invention]

[0013] Hereinafter, embodiments of the present invention (hereinafter referred to as "this embodiment") will be described in detail with reference to the drawings, but the present invention is not limited thereto, and various modifications are possible without departing from its essence.

[0014] In the following description, we will use as an example a negative-type photosensitive resin composition in which the resin layer hardens upon exposure, and the portion hardened by exposure remains during development. However, the method of this embodiment is also applicable to positive-type photosensitive resin compositions in which the exposed portion is removed during development.

[0015] 1. Information Processing Device Figure 1A shows a schematic diagram illustrating the configuration of System 1, which is one embodiment of the present invention. As shown in Figure 1A, in one example of System 1, the server 100 (hereinafter also referred to as "information processing device 100"), which is an information processing device, and the user device 200 may be connected to each other via a network N such as the Internet.

[0016] The information processing device 100 is an information processing device implemented by this program, and may transmit processing results to the user device 200 in response to processing requests received from the user device 200 via the communication interface 120 and the network N. For example, the information processing device 100 may acquire information about the resin layer from the user device 200.

[0017] Then, based on the information about the resin layer, the information processing device 100 calculates the absorbance distributions of scattered and unscattered light generated during pattern exposure, and based on these, calculates the absorbance distribution E of the resin layer. total The absorbance distribution E of the resin layer may be calculated and transmitted to the user device 200. Furthermore, the information processing device 100 may also consider the focus shift within the resin layer and the wave-optical effects in a high aperture ratio (NA) exposure system, and calculate the absorbance distribution E of the resin layer. total You may calculate this.

[0018] The user device 200 is an information processing device used by a user who performs the processing of the disclosure, and may be, for example, a computer, smartphone, tablet terminal, personal computer, etc.

[0019] Figure 1A shows a client / server system including an information processing device 100 and a user device 200. The following description will focus on a configuration in which the server functions as the information processing device 100. However, the system of this embodiment is not limited to this configuration, and the user device 200 may instead be equipped with the processing functions of the information processing device described later.

[0020] The hardware and functional configurations of the information processing device 100 will be described below with reference to Figure 1B, and then each control will be explained in detail in relation to the functional configuration of the information processing device 100.

[0021] As shown in Figure 1B, the information processing device 100 includes, for example, a processor 110, a communication interface 120, an input / output interface 130, a memory 140, storage 150, and one or more communication buses 160 for interconnecting these components.

[0022] The processor 110 executes processes, functions, or methods implemented by code or instructions contained in a program stored in the storage 150. The processor 110 may include, but is not limited to, one or more central processing units (CPUs), MPUs, GPUs, etc., and may implement each of the processes, functions, or methods disclosed in each embodiment by logic circuits (hardware) or dedicated circuits formed on an integrated circuit, etc.

[0023] As shown in Figure 1B, the processor 110 of this embodiment may be configured to function as an acquisition unit 111, a first calculation unit 112, a second calculation unit 113, a third calculation unit 114, and an output unit 115.

[0024] The communication interface 120 transmits and receives various types of data with other devices via the network N. This communication may be performed via wired or wireless connection, and any communication protocol may be used as long as communication between the devices is possible. For example, the communication interface 120 may be implemented as hardware such as a network adapter, various types of communication software, or a combination thereof.

[0025] The input / output interface 130 includes an input device for inputting various operations to the information processing device 100, and an output device for outputting processing results processed by the information processing device 100. For example, the input / output interface 130 includes information input devices such as a keyboard, mouse, and touch panel, and information output devices such as a display. The information processing device 100 may accept predetermined inputs or perform predetermined outputs by connecting an external input / output interface 130.

[0026] Memory 140 temporarily stores the program loaded from storage 150 and provides a workspace for the processor 110. Various data generated while the processor 110 is executing the program are also temporarily stored in memory 140. Memory 140 may be, for example, high-speed random access memory such as DRAM, SRAM, DDR RAM, or other random access solid-state memory, or a combination thereof.

[0027] The storage 150 stores programs, various functional units, and various data. The storage 150 may be, for example, one or more magnetic disk storage devices, optical disk storage devices, flash memory devices, or other non-volatile solid-state storage devices, or a combination thereof. Another example of the storage 150 is one or more storage devices installed remotely from the processor 110.

[0028] The communication bus 160 is not particularly limited as long as it is a known dedicated communication path for exchanging data, control information, and the like between hardware components.

[0029] Next, the absorbance distribution E of the present embodiment total will be described with respect to its calculation method. In the method according to the present embodiment, as represented by the following formula (1) or FIG. 2A, the absorbance distribution E generated inside the material total is calculated based on the absorbance distribution E of the scattering component scat and the absorbance distribution E of the non-scattering component wave .

Mathematical expression

[0030] As used herein, the term "scattering component" refers to light scattered within a layer. On the other hand, the term "non-scattering component" refers to light that is not scattered within a layer, that is, light that propagates and is absorbed with refraction and interference in wave optics (hereinafter also referred to as wave attenuation component).

[0031] In the present embodiment, as shown in FIG. 2B, when calculating the absorbance distribution E of the scattering component scat and the absorbance distribution E of the non-scattering component wave , the resin layer is divided into m layers (L1 to Lm) each having a thickness d in the thickness direction, and the layer L n (provided that 1≤n≤m) at the upper part (layer L n-1 and layer L n , which is the interface Fn between them), a model is assumed in which a part of the non-scattering component that has reached the interface Fn is scattered for the first time in the layer L n . FIG. 2B shows an example of a model in which the resin layer is divided into m layers in a laminate composed of a protective layer (polyethylene terephthalate (PET) layer), a resin layer, and a base material layer (copper (Cu) layer). Note that the layer L0 is a layer in contact with the resin layer (such as a protective layer or an air layer).

[0032] Here, assuming the Lambert-Beer law, the light intensity I(n) of the non-scattering component reaching the interface Fn is represented by the following formula. Here, I0 is the exposure intensity of pattern exposure (the light intensity of the non-scattering component reaching the upper part of the layer L1), μs and μ a These are the scattering coefficient and absorption coefficient of the resin layer, respectively.

number

[0033] Furthermore, among the non-scattering components that reach the interface Fn, layer L n Light absorbed or scattered by layer L n Passing through layer L n+1 The relationship with the non-scattering components that reach layer L is shown in the conceptual diagram in Figure 2C. Specifically, of the non-scattering components that reach the interface Fn, layer L n The light intensity I of light absorbed by a (n) and layer L n The light intensity I of the light scattered by s (n) is expressed by the following formula.

number

[0034] Here, the absorption distribution originating from the light first scattered in layer Ln is E. scat If we define (n), then the absorbance distribution of the scattering component in the entire resin layer E scat This can be described as the sum of layers L1 to Lm, as shown in equation (2) below. That is, in this embodiment, the resin layer is divided into m layers (L1 to Lm) in the thickness direction, and the contribution of the light scattered for the first time in each layer is calculated and then accumulated to finally determine the absorbance distribution E of the scattering component of the entire material. scat We seek.

number

[0035] Furthermore, the absorption distribution of the non-scattering component E wave is layer L n The absorbance distribution of the non-scattering component absorbed by E wave If we let (n), then by adding each layer, for example, we can calculate it as shown in equation (3) below.

number

[0036] In this way, by sequentially considering the scattering and absorption processes for each layer, it becomes possible to reflect the influence of non-scattering components. Therefore, even when the non-scattering layer is thick in the resin layer, or when the scattering coefficient is small in the resin layer, the absorbance distribution E can be calculated more accurately. total This allows for the calculation of [the relevant value]. Furthermore, it becomes possible to take into account the effects of factors such as focus misalignment in the exposure device.

[0037] The following describes the absorbance distribution E of the scattering component calculated by the first calculation unit 112 to the third calculation unit 114. scat , Absorbance distribution of non-scattering component E wave , Absorbance distribution E in the entire resin layer total The calculation of each of these will be explained in more detail. Note that the following explanation of the calculation process is an example, and the calculation process described herein is not limited to that.

[0038] The first calculation unit 112 calculates the absorbance distribution E of the scattering component of the resin layer. scat The absorbance distribution E of the scattering component of the resin layer is calculated. scat The method of calculation is not particularly limited, but for example, when the resin layer is divided into m layers in the thickness direction, the nth layer (where 1 ≤ n ≤ m) is layer L n The absorption distribution of the scattering component due to the first scattered light E scat Based on (n), absorbance distribution E scat The first calculation unit 112 may also calculate the absorbance distribution E of the scattering component. scat (n) may be calculated by Monte Carlo simulation.

[0039] Specifically, the process is carried out in the following steps. First, for each layer L1, L2, ..., Lm, the behavior of photons is simulated using Monte Carlo simulation, focusing on the light scattered for the first time in that layer. Next, the absorbance distribution E obtained for the nth layer is calculated. scat By integrating (n) over layers L1 to Lm, the total absorbance distribution E of the scattering components can be obtained. scat Derive the following.

[0040] Next, the absorption distribution of the scattering component E obtained by Monte Carlo simulation. scat The method for calculating (n) will be explained in detail. The scattering coefficient is μ s , the absorption coefficient is μ a Considering the case where a single photon is incident on the surface of a material with scattering anisotropy parameter g, the mean free path L of that photon is expressed by the following equation (4).

number

[0041] Assuming that a photon traveling a distance L undergoes both scattering and absorption simultaneously, the photon's light intensity is attenuated by the weight of W shown in equation (5), and scattered in the direction of the zenith angle θ shown in equation (6) relative to the direction of the photon's propagation. Furthermore, scattering occurs isotropically in the azimuthal direction.

number

[0042] Here, f(θ) represents the cumulative distribution function of the scattering phase function p(θ), and r² is a random number between 0 and 1. Examples of phase functions include the Henyey-Greenstein phase function shown in equation (7).

number

[0043] In equation (7), when g ≠ 0, cosθ is given by equation (8).

number

[0044] Using these equations, the scattering coefficient μ s , extinction coefficient μ aBy using the scattering anisotropy parameter g, it is possible to simulate the propagation path of a photon and the attenuation of light intensity during that process. If the light intensity of a photon becomes sufficiently small (for example, to less than 1 / 10,000th of the incident light intensity), the photon can be considered to have been annihilated. If the photon is emitted from the incident surface of the material, it can be considered to have been reflected.

[0045] When a photon reaches the interface of a material, it can be considered to have been transmitted or reflected depending on the properties of the interface. For example, based on Fresnel's equation, it can be considered that part of the photon is transmitted and the other part is reflected.

[0046] When an incident photon is annihilated or emitted outside the material through transmission or reflection, the Monte Carlo simulation for that photon ends, and the coordinates where the photon's energy decayed and the amount of energy decay at those coordinates are recorded.

[0047] The energy attenuation calculated in this way is a simulation of the absorbance distribution of a single photon incident from a single irradiation point. By performing similar simulations for multiple photons from a single irradiation point, the absorbance distribution of the scattered component incident from a single irradiation point can be calculated.

[0048] In this embodiment, by placing a light source (irradiation point) at the interface Fn and performing a Monte Carlo simulation, layer L n This makes it possible to perform Monte Carlo simulations targeting scattered light for the first time. The results of the Monte Carlo simulations obtained in this way e MC and layer L n The light intensity I of the light that was scattered for the first time s (n) and the in-plane light intensity distribution I' at interface Fn l From (n), layer L n The absorption distribution of the first scattered light E scat (n) can be calculated.

[0049] Here, the in-plane light intensity distribution I' at the interface Fnl (n) may be considered as a uniform distribution in the exposure region, or it may be the in-plane light intensity distribution derived using wave-optics techniques as described later.

[0050] The second calculation unit 113 calculates the absorbance distribution E of the non-scattering component. wave The absorbance distribution of the non-scattering component E is calculated. wave The method of calculation is not particularly limited, but for example, the second calculation unit 113 calculates layer L based on the Lambert-Beer law. n Absorbance distribution of non-scattering components absorbed by E wave Based on (n), the absorbance distribution E wave You may also calculate the following. For example, layer L mentioned above. n The light intensity I of the non-scattering component absorbed by a (n) and in-plane light intensity distribution I' l From (n), layer L n Absorbance distribution of non-scattering components absorbed by E wave (n) can be calculated. In addition, the light intensity distribution of the non-scattering component obtained by electromagnetic field calculations such as the FDTD method can be calculated to obtain the absorbance distribution E. wave You may calculate this.

[0051] In this embodiment, since the contributions of the scattering component and the non-scattering component are considered separately, even for materials containing scatterers, the absorbance distribution E in any n layer is considered based on wave optics, taking into account attenuation, phase change, etc. scat (n) and E wave (n) is a stool that calculates n.

[0052] Specifically, in this embodiment, since wave optics techniques can be applied to the non-scattering component, the in-plane light intensity distribution I' l (n) The effects of focus misalignment in the exposure device can also be taken into consideration.

[0053] In wave optics methods, the ideal lens approximation and Fourier transform (FFT / iFFT) are used to determine the in-plane light intensity distribution I', taking into account the mask pattern, exposure equipment NA, aberrations, etc. l Find (n). In-plane light intensity distribution I' lConventional methods can be used to derive (n). Furthermore, by considering the refractive index ni and layer thickness di within the resin layer, the focus shift can be corrected by integrating the optical path length D. This makes it possible to perform calculations that reflect the focus error in high aperture ratio (NA) environments and within the material.

[0054] The third calculation unit 114 calculates the absorbance distribution E calculated by the first calculation unit 112. scat and the absorbance distribution E calculated by the second calculation unit 113 wave Based on E total The calculation method is not particularly limited, but for example, the third calculation unit 114 calculates the absorbance distribution E. scat and the absorbance distribution E wave The absorption distribution E is obtained by the sum of these. total You may calculate this.

[0055] This results in the overall absorbance distribution E of the resin layer. total This allows for obtaining the desired result. Compared to conventional techniques that consider only the contribution of scattering or non-scattering components, the method of this disclosure has broad applicability, whether scattering is large or small. Furthermore, even with materials containing scatterers, it is possible to consider the effects of focus shifts in the exposure apparatus.

[0056] Next, the processing performed by the acquisition unit 111 and the first calculation unit 112 to the third calculation unit 114 will be explained again as a flowchart shown in Figure 3.

[0057] First, in step S1, the acquisition unit 111 acquires information about the resin layer to be analyzed and exposure conditions. Here, the information about the resin layer is not particularly limited, but for example, the refractive index n and the scattering coefficient μ. s , absorption coefficient μ a Examples include the scattering anisotropy parameter g and the film thickness D. The acquisition unit 111 also sets the number of layers m or the thickness di of each layer when the resin layer is divided into m layers in the thickness direction, for calculations to be described later. The acquisition unit 111 may also set each layer by dividing the resin layer of thickness D into m equal parts.

[0058] The acquisition unit 111 may acquire information on the protective layer and the base material layer as needed. The information on the protective layer and the base material layer is the same as the information on the resin layer.

[0059] The acquisition unit 111 may acquire information on exposure conditions such as exposure intensity I0, and if necessary, light source wavelength λ, numerical aperture NA, mask pattern, defocus value, etc., as exposure conditions. The various types of information acquired by the acquisition unit 111 may be received from a user device or an external database, or may be acquired from data pre-stored in the information processing apparatus.

[0060] The light intensity I(n) at the interface Fn can be expressed by the following formula (9) based on the Lambert-Beer law from the various information acquired by the acquisition unit 111.

Math

[0061] In step S2, the first calculation unit 112 sets the layer from which calculation starts as n=1, and sets the absorbance E of the scattered component scat to zero for initialization. Also, the second calculation unit sets the layer from which calculation starts as n=1, and sets the absorbance E of the non-scattered component wave to zero for initialization.

[0062] In step S3, the first calculation unit 112 calculates the in-plane intensity distribution I' at the interface Fn l (n). The in-plane intensity distribution I' at the interface Fn l (n) may be regarded as a uniform distribution in the exposure region, or may be obtained using an ideal lens model, Fourier transform, or the like.

[0063] In step S4, the first calculation unit 112 performs the above-mentioned Monte Carlo simulation, and obtains the result e MC , layer L n light intensity of light scattered for the first time in I s (n) and in-plane intensity distribution I' l (n), based on which, layer L nThe absorption distribution of the first scattered light E scat Calculate (n).

[0064] In step S5, the second calculation unit 113 calculates the in-plane light intensity distribution I' l Based on (n) and the Lambert-Beer law, the absorbance distribution of the non-scattering component absorbed in layer Ln E wave Calculate (n).

[0065] In step S6, the first calculation unit 112 and the second calculation unit 113 increment n and proceed to the calculation of the next layer, repeating the calculations in steps S3 to S5 until n = m, and calculating the absorbance distribution Ewave(n) of the non-scattering component and the absorbance distribution Escat(n) of the scattering component of the L1 to Lm layers. Then, when the layer number n reaches the final layer m, the process proceeds to step S7.

[0066] In step S7, the first calculation unit 112 and the second calculation unit 113 integrate the absorbance distribution Ewave(n) of the non-scattering component and the absorbance distribution Escat(n) of the scattering component obtained up to step S6 (equations (2) and (3)), respectively, to calculate the absorbance distributions of the non-scattering component Ewave and the scattering component Escat.

[0067] In step S8, the third calculation unit 114 calculates the absorbance distribution E of the resin layer according to the following formula (1). total Calculate.

number

[0068] The output unit 115 may visualize or numerically output the results of the calculation processing performed by the first calculation unit 112 to the third calculation unit 114. Specifically, the output unit 115 may output a two-dimensional or three-dimensional distribution diagram that visualizes the absorbance distribution of the scattering component and the non-scattering component, or the overall absorbance distribution of the resin layer. Additionally, the output unit 115 may output a predicted shape after development (for example, a cross-sectional shape or a three-dimensional pattern). The predicted shape after development can be calculated, for example, from the absorbance distribution of the resin layer based on a development rate equation. Examples of the development rate equation include Mack's development rate equation, Dill's development rate equation, Kim's development rate equation, and the like.

[0069] The information processing apparatus of the present embodiment may include a proposal unit 116 that proposes optimized parameters (for example, a scattering coefficient, an absorption coefficient, etc.), material compositions, and process conditions (for example, film thickness, exposure time) based on the absorbance distribution of the resin layer calculated by the third calculation unit 114.

[0070] The proposal unit 116 may, based on the target post-development shape desired by a user, propose parameters of the resin layer corresponding to a predicted post-development shape similar to the target post-development shape, as well as material compositions and process conditions for obtaining said parameters. For example, the proposal unit 116 calculates the absorbance distribution of the resin layer respectively by repeating steps S1 to S8 while changing the parameters of the resin layer and the process conditions. Next, the proposal unit 116 calculates the predicted post-development shape from the calculated absorbance distribution, and when the similarity between the predicted post-development shape and the target post-development shape desired by the user is equal to or greater than a predetermined value, the proposal unit 116 may propose the parameters of the resin layer corresponding to the predicted post-development shape, as well as the material composition and process conditions for obtaining said parameters.

[0071] 2. Information Processing Method In the information processing method of the present embodiment, the information processing apparatus obtains the absorbance distribution E of the scattering component of the resin layer scat a step of calculating the absorbance distribution E of the non-scattering component of the resin layer wave a step of calculating the absorbance distribution E scat and the absorbance distribution E waveBased on this, the light absorption distribution E of the resin layer total The steps to calculate and perform are as follows.

[0072] The specific details of the method in this embodiment are described in the control processing section above, so a detailed explanation is omitted here.

[0073] 3. This program In this program of the embodiment, the information processing device receives the absorbance distribution E of the scattering component of the resin layer. scat A step to calculate the absorbance distribution E of the non-scattering component of the resin layer. wave The steps of calculating the absorbance distribution E scat and the absorbance distribution E wave Based on this, the light absorption distribution E of the resin layer total The steps involve calculating and executing.

[0074] The program may be recorded on a readable recording medium. The specific details of the processing performed by the program in this embodiment are described in the control processing section above, so a detailed explanation is omitted here.

[0075] 4. Method for producing resin compositions The method for producing the resin composition of this embodiment includes the step of preparing a resin composition having a material composition selected based on the absorbance distribution of the resin layer calculated by the information processing device of this disclosure. Specifically, it is the step of preparing a resin composition by selecting a material composition that satisfies the parameters of the resin layer proposed by the proposal unit 116. Alternatively, it may be the step of preparing a resin composition by selecting a material composition proposed by the proposal unit 116.

[0076] 5. Method for manufacturing resin patterns The resin pattern manufacturing method of this embodiment includes an exposure step of exposing a resin layer laminated on a substrate in a predetermined pattern shape, and a developing step of developing the resin layer, wherein the exposure step is a step of exposing the resin layer under process conditions selected based on the absorbance distribution of the resin layer calculated by the information processing device of this disclosure. Specifically, the exposure step is a step of exposing the resin layer by selecting process conditions proposed by the proposal unit 116. [Explanation of Symbols]

[0077] 1...System, 100...Information Processing Unit, 100...Server, 110...Processor, 111...Acquisition Unit, 112...First Calculation Unit, 113...Second Calculation Unit, 114...Third Calculation Unit, 115...Output Unit, 120...Communication Interface, 130...Input / Output Interface, 140...Memory, 150...Storage, 160...Communication Bus, 200...User Device

Claims

1. Absorbance distribution of scattering components in the resin layer E ｓｃａｔ A first calculation unit that calculates, Absorbance distribution E of the non-scattering component of the resin layer ｗａｖｅ A second calculation unit that calculates, Absorbance distribution E ｓｃａｔ and the absorbance distribution E ｗａｖｅ Based on this, the light absorption distribution E of the resin layer ｔｏｔａｌ A third calculation unit that calculates the following, Information processing device.

2. The first calculation unit calculates the absorbance distribution E of the scattering component caused by light that is first scattered at the nth layer (where 1 ≤ n ≤ m) when the resin layer is divided into m layers in the thickness direction. ｓｃａｔ Based on (n), the absorbance distribution E ｓｃａｔ Calculate The information processing apparatus according to claim 1.

3. The first calculation unit calculates the absorbance distribution E ｓｃａｔ (n) is calculated by Monte Carlo simulation. The information processing apparatus according to claim 2.

4. When the resin layer is divided into m layers in the thickness direction, the second calculation unit is configured to calculate the absorbance distribution E of non-scattering components absorbed in the n-th layer (where 1≦n≦m) ｗａｖｅ based on (n), the absorbance distribution E ｗａｖｅ is calculated. The information processing apparatus according to claim 1.

5. The third calculation unit calculates the absorbance distribution E ｓｃａｔ and the absorbance distribution E ｗａｖｅ The sum of the absorbance distribution E ｔｏｔａｌ Calculate The information processing apparatus according to claim 1.

6. Information processing device, Absorbance distribution of scattering components in the resin layer E ｓｃａｔ The steps to calculate, Absorbance distribution E of the non-scattering component of the resin layer ｗａｖｅ The steps to calculate, Absorbance distribution E ｓｃａｔ and the absorbance distribution E ｗａｖｅ Based on this, the light absorption distribution E of the resin layer ｔｏｔａｌ The steps to calculate and perform Information processing methods.

7. In an information processing device, Absorbance distribution of scattering components in the resin layer E ｓｃａｔ The steps to calculate, Absorbance distribution E of the non-scattering component of the resin layer ｗａｖｅ The steps to calculate, Absorbance distribution E ｓｃａｔ and the absorbance distribution E ｗａｖｅ Based on this, the light absorption distribution E of the resin layer ｔｏｔａｌ The steps to calculate and execute program.

8. A method for producing a resin composition, The absorbance distribution E of the resin layer calculated by the information processing device described in claim 1 ｔｏｔａｌ The process includes preparing a resin composition having a material composition selected based on the following: A method for producing a resin composition.

9. A method for manufacturing a resin pattern, An exposure process in which a resin layer laminated on a substrate is exposed in a predetermined pattern shape, The process includes developing the resin layer, The exposure step is performed by calculating the absorbance distribution E of the resin layer using the information processing device described in claim 1. ｔｏｔａｌ This is a process of exposure under process conditions selected based on the above. A method for manufacturing resin patterns.

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