Sensor device

Abstract

The present invention provides a sensor device that offers more stable detection performance while also being capable of further miniaturization. [Solution] The sensor device comprises a support having a first surface, a substrate having a second surface, a sensor chip provided on the first surface having a sensor element portion provided on the second surface, and a conductive pillar provided on the first surface. The conductive pillar includes a structure in which a first layered portion having a first cross-sectional area and a second layered portion having a second cross-sectional area smaller than the first cross-sectional area are stacked in order from the first surface side. The second layered portion is located in a position that overlaps with the sensor element portion in the in-plane direction along the first surface.

Description

[[Technical Field]]

[0001] The present disclosure relates to a sensor device. [[Background Art]]

[0002] In recent years, compact sensor devices in which a sensor element is provided on a substrate have been used for various applications. As a sensor element, there is known an optical device as an image sensor device in which, for example, an optical element that performs photoelectric conversion of incident light is provided on a transparent substrate (see, for example, Patent Document 1). [[Prior Art Literature]] [[Patent Literature]]

[0003] [[Patent Document 1]] International Publication No. WO 2014 / 083746 Specification [[Summary of the Invention]] [[Problem to be Solved by the Invention]]

[0004] Incidentally, it is desirable for a sensor device to have stable detection sensitivity and be more compact.

[0005] Therefore, there is a demand for a sensor device that has more stable detection performance and can accommodate further miniaturization. [[Means for Solving the Problem]]

[0006] A sensor device according to an embodiment of the present disclosure includes a support body having a first surface, and a sensor chip provided on the first surface, the sensor chip including a substrate having a second surface and a sensor element portion provided on the second surface, and a conductive pillar provided on the first surface. The conductive pillar includes a structure in which, in order from the first surface side, a first layer portion having a first cross-sectional area and a second layer portion having a second cross-sectional area smaller than the first cross-sectional area are stacked. The second layer portion is located at a position overlapping the sensor element portion in an in-plane direction along the first surface.

[0007] In a sensor device as one embodiment of the present disclosure, the conductive pillar connected to the sensor element portion of the sensor chip includes a first layer and a second layer, wherein the second cross-sectional area of ​​the second layer is smaller than the first cross-sectional area of ​​the first layer. Furthermore, the second layer is positioned to overlap with the sensor element portion in the in-plane direction along the first surface. Therefore, even if the conductive pillar undergoes thermal expansion due to rising ambient temperature or external heating, the thermal stress on the sensor element portion of the sensor chip is reduced. As a result, detection performance is stabilized. [Effects of the Invention]

[0008] According to one embodiment of the sensor device of this disclosure, it has more stable detection performance and is suitable for further miniaturization. However, the effects of this disclosure are not limited to those described herein, and may include any of the effects described below. [Brief explanation of the drawing]

[0009] [Figure 1A] This is a cross-sectional view showing an example of the overall configuration of an angle sensor device according to one embodiment of the present disclosure. [Figure 1B] This is a schematic plan view showing a magnified portion of the angle sensor device shown in Figure 1A. [Figure 2] Figure 1A is a circuit diagram of the angle sensor device shown. [Figure 3A] Figure 1A is an explanatory diagram illustrating one step in the manufacturing process of the angle sensor device shown. [Figure 3B] This is an explanatory diagram showing the next step following Figure 3A. [Figure 3C] This is an explanatory diagram showing the next step following Figure 3B. [Figure 3D] This is an explanatory diagram showing the next step following Figure 3C. [Figure 3E] This is an explanatory diagram showing the next step following Figure 3D. [Figure 4] This is a cross-sectional view showing an example of the overall configuration of an angle sensor device as a first modified example of the present disclosure. [Figure 5]It is a cross-sectional view illustrating an example of the overall configuration of an angle sensor device as a second modification of the present disclosure. [Figure 6] It is a cross-sectional view illustrating an example of the overall configuration of an angle sensor device as a third modification of the present disclosure. [Figure 7] It is a cross-sectional view illustrating an example of the overall configuration of an angle sensor device as a fourth modification of the present disclosure. [Figure 8A] It is an explanatory view illustrating one step in a method for manufacturing an angle sensor device as a first reference example of the present disclosure. [Figure 8B] It is an explanatory view illustrating one step subsequent to FIG. 8A. [Figure 8C] It is an explanatory view illustrating one step subsequent to FIG. 8B. [Figure 8D] It is an explanatory view illustrating one step subsequent to FIG. 8C. [Figure 8E] It is an explanatory view illustrating one step subsequent to FIG. 8D. DETAILED DESCRIPTION OF EMBODIMENTS

[0010] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be given in the following order. 0. Background 1. One embodiment: an example of an angle sensor device including a magnetoresistive effect element. 1.1 Configuration of angle sensor device 1 1.2 Method for manufacturing angle sensor device 1 1.3 Actions and effects 2. Examples

[0011] <0. Background> Conventionally, angle sensor devices that detect the posture, rotation angle, and the like of an object by detecting changes in an external magnetic field have been in use. Since such an angle sensor device is disposed in a limited space near a rotating body to which a magnet is attached, miniaturization of the angle sensor device is required. In addition, since higher measurement accuracy is also required, it is desirable to mount a larger number of sensor elements in a limited area at high density.

[0012] Therefore, in light of the above-mentioned problems, the applicant has conducted extensive research and made improvements, resulting in the provision of an angle sensor device that has high measurement accuracy and can be further miniaturized.

[0013] <1. First Embodiment> [1.1 Configuration of Angle Sensor Device 1] First, the configuration of the angle sensor device 1 as one embodiment of the present invention will be described with reference to Figures 1A to 2. The angle sensor device 1 is a specific example corresponding to the "sensor device" of one embodiment of the present invention.

[0014] Figure 1A is a schematic cross-sectional view showing an arbitrary cross-section of the angle sensor device 1. Figure 1B is a plan view showing an enlarged portion of the angle sensor device 1. As shown in Figure 1A, the angle sensor device 1 comprises a support substrate 2, a sensor chip 3, a conductive pillar 4, wiring 5, a connecting layer 6, and an insulating film 7. The sensor chip 3 is stacked on the support substrate 2. More specifically, the sensor chip 3 is provided on the surface 2FS of the support substrate 2. The sensor chip 3 is covered with the insulating film 7. On the surface 2FS of the support substrate 2, a conductive pillar 4 is provided at a different position from the sensor chip 3, adjacent to the sensor chip 3. The conductive pillar 4 extends in the thickness direction (Z-axis direction) so as to penetrate the insulating film 7.

[0015] In this embodiment of the angle sensor device 1, the support substrate 2 and the sensor chip 3 extend along the XY plane, which includes the mutually orthogonal X-axis and Y-axis directions. In this embodiment, the thickness direction of the support substrate 2 and the sensor chip 3 is the Z-axis direction.

[0016] (Support substrate 2) The support substrate 2 is, for example, a substrate having an ASIC (Application-Specific Integrated Circuit). Terminal portions 21 are provided on the surface 2FS of the support substrate 2. Note that the support substrate 2 is not limited to a substrate having an ASIC, but may be a simple Si substrate or sapphire substrate, or a relay substrate that acts as a relay between the substrate having an ASIC and the sensor chip 3.

[0017] (Sensor chip 3) The sensor chip 3 has an appearance that is roughly rectangular in shape, for example, having a roughly square or roughly rectangular planar shape when viewed in a planar view along the XY plane. The sensor chip 3 has a stacked structure of a sensor substrate 31 and a sensor element portion 32. The sensor chip 3 further has a pad portion 33 that is electrically connected to the sensor element portion 32.

[0018] The sensor substrate 31 is, for example, a silicon substrate. The thickness of the sensor substrate 31 is, for example, 200 μm or less. The sensor substrate 31 is a flat plate member having, for example, a surface 31FS with a planar shape that is approximately square or approximately rectangular. The surface 31FS is a plane that is approximately perpendicular to the Z-axis direction, which is the thickness direction of the sensor substrate 31.

[0019] The sensor element section 32 is provided, for example, in the central region on the surface 31FS of the sensor substrate 31. The sensor element section 32 includes one or more magnetic sensor elements E. The magnetic sensor element E is, for example, a tunnel magnetoresistance effect element (hereinafter referred to as a TMR element). The magnetic sensor element E is a sensor element whose sensitivity changes due to stress such as thermal stress or mechanical stress. The sensor element section 32 has a plurality of sensor element groups. In the configuration example shown in Figure 1B, the sensor element section 32 includes four magnetic sensor elements E1 to E4 (for convenience, referred to as E1 to E4 in Figure 1B) arranged in a matrix. Each of the magnetic sensor elements E1 to E4 is composed of, for example, a plurality of TMR films and a plurality of wires connecting these plurality of TMR films in series. The magnetic sensor elements E1 to E4 constitute, for example, the resistors R1 to R4 of the full-bridge circuit 8 shown in Figure 2. Figure 2 is a circuit diagram showing an example of the circuit configuration of the angle sensor device 1. The angle sensor device 1 includes, for example, a full-bridge circuit 8, a difference detector AMP, and an arithmetic circuit 9. The angle sensor device 1 is configured to detect changes in the external magnetic field to the sensor chip 3 based on the difference between the potential obtained from connection point T1 of the full-bridge circuit 8 and the potential obtained from connection point T2.

[0020] The full-bridge circuit 8 includes four resistors R1 to R4. Resistor R1 is composed of a magnetic sensor element E1, resistor R2 is composed of a magnetic sensor element E2, resistor R3 is composed of a magnetic sensor element E3, and resistor R4 is composed of a magnetic sensor element E4. The full-bridge circuit 8 is made up of resistors R1 and R2 connected in series, and resistors R3 and R4 connected in series, which are then connected in parallel to each other. More specifically, in the full-bridge circuit 8, one end of resistor R1 and one end of resistor R2 are connected at connection point T1, one end of resistor R3 and one end of resistor R4 are connected at connection point T2, the other end of resistor R1 and the other end of resistor R4 are connected at connection point T3, and the other end of resistor R2 and the other end of resistor R3 are connected at connection point T4. Connection point T3 is connected to the power supply Vcc, and connection point T4 is connected to the ground terminal GND. Connection point T1 and connection point T2 are connected to the input terminals of the difference detector AMP, respectively.

[0021] Each of the resistors R1 to R4 is capable of detecting changes in the signal magnetic field being detected. For example, resistors R1 and R3 decrease in resistance when a signal magnetic field is applied in the +Y direction and increase in resistance when a signal magnetic field is applied in the -Y direction. On the other hand, resistors R2 and R4 increase in resistance when a signal magnetic field is applied in the +Y direction and decrease in resistance when a signal magnetic field is applied in the -Y direction. Therefore, resistors R1 and R3 and resistors R2 and R4 output signals that are, for example, 180° out of phase with each other in response to changes in the signal magnetic field. The signal extracted from the full-bridge circuit 8 flows into the difference detector AMP. The difference detector AMP detects the potential difference between connection point T1 and connection point T2 when a voltage is applied between connection point T3 and connection point T4, and outputs it as a difference signal SL to the calculation circuit 9.

[0022] (Conductive pillar 4) As described above, the conductive pillar 4 is provided on the surface 2FS of the support substrate 2 at a different position from the sensor chip 3, and is electrically connected to the sensor element 32 via wiring 5, connection layer 6, and pad portion 33. The conductive pillar 4 is made of a highly conductive material such as Cu (copper). The lower end 4BT of the conductive pillar 4 is connected to a terminal portion 21 provided on the surface 2FS of the support substrate 2. The pillar height H1 from the surface 2FS to the upper end 4UT of the conductive pillar 4 is higher than the chip height H2 from the surface 2FS to the surface 31FS. The conductive pillar 4 has a structure in which a first layer portion 41 and a second layer portion 42 are stacked in order from the surface 2FS side. Here, as shown in Figure 1B, the cross-sectional area A41 of the first layer portion 41 is larger than the cross-sectional area A42 of the second layer portion 42. In the example shown in Figure 1B, both the first layer portion 41 and the second layer portion 42 have a substantially cylindrical outer shape. Therefore, the outer diameter φ41 of the first layer portion 41 is larger than the outer diameter φ42 of the second layer portion 42. Thus, in the XY plane, the second distance D2 between the second layer portion 42 and the sensor substrate 31 of the sensor chip 3 is longer than the first distance D1 between the first layer portion 41 and the sensor substrate 31 of the sensor chip 3. Furthermore, the first layer portion 41 has a first height H41 in the Z-axis direction. The second layer portion 42 has a second height H42 in the Z-axis direction. It is preferable that the first height H41 is larger than the second height H42.

[0023] (Insulating film 7) The insulating film 7 is composed of a resin material such as polyimide or epoxy resin.

[0024] (Wiring 5) The wiring 5 is located above the sensor chip 3 and the conductive pillar 4. Therefore, the sensor chip 3 and the conductive pillar 4 are located in layers between the support substrate 2 and the wiring 5, respectively. The wiring 5 is made of a conductive material such as Cu (copper), Al (aluminum), or W (tungsten), and electrically connects the sensor element 32 and the conductive pillar 4. In the configuration example shown in Figure 1A, the lower surface of the wiring 5 is in contact with the upper end 4UT of the conductive pillar 4 and also with the upper end of the connection layer 6. The lower end of the connection layer 6 is in contact with a pad portion 33 provided on the surface 31FS of the sensor substrate 31.

[0025] [1.2 Method for manufacturing the angle sensor device 1] Next, with reference to Figures 1A, 1B, and Figures 3A to 3E, a method for manufacturing the angle sensor device 1 as one embodiment of the present invention will be described. Figures 3A to 3E are schematic diagrams showing each step in an example of the method for manufacturing the angle sensor device 1.

[0026] First, a support substrate 2 is prepared, and as shown in Figure 3A, terminal portions 21 are formed on the surface 2FS of the support substrate 2.

[0027] Next, as shown in Figure 3B, a first layer portion 41 having a first height H41 is formed on the terminal portion 21 by electroplating or the like.

[0028] Next, multiple sensor element sections 32, each containing a magnetic sensor element E1 to E4, and multiple pad sections 33 are provided on a base substrate, such as a silicon wafer, which will later be cut into multiple sensor substrates 31. Then, by cutting the base substrate into regions corresponding to the sensor element sections 32, multiple sensor chips 3 are formed on the surface 31FS of the sensor substrate 31, each containing a sensor element section 32 and a pad section 33. After that, as shown in Figure 3C, the sensor chips 3 are placed on the surface 2FS of the support substrate 2. At this time, the thickness of the sensor substrate 31 is adjusted so that the chip height H2 of the sensor chip 3 is higher than the first height H41 of the first layer section 41.

[0029] Next, as shown in Figure 3D, an insulating film 7 is formed to cover the surface 2FS of the support substrate 2, the first layer portion 41, and the sensor chip 3. It is preferable to form the insulating film 7 so as to fill the gap between the first layer portion 41 and the sensor chip 3. Furthermore, by making the thickness of the insulating film 7 greater than the chip height H2, the upper surface of the insulating film 7 is positioned higher than the surface 31FS of the sensor chip 3. Methods for forming the insulating film 7 include, for example, spin coating, printing, lamination, transfer molding, or compression molding.

[0030] Next, as shown in Figure 3E, an opening is formed at a predetermined position in the insulating film 7. Specifically, an opening 42K is formed at a position corresponding to the Z-axis direction of the first layer portion 41, and an opening 6K is formed at a position corresponding to the Z-axis direction of the pad portion 33. By providing the opening 42K, a portion of the upper surface of the first layer portion 41 is exposed. By providing the opening 6K, a portion of the upper surface of the pad portion 33 is exposed. Here, if the insulating film 7 is made of a photosensitive material, the openings 42K and 6K can be formed using, for example, photolithography. If the insulating film 7 is made of a non-photosensitive material, the openings 42K and 6K can be formed using, for example, laser processing or chemical treatment. Here, the cross-sectional area of ​​the opening 42K along the XY plane is made smaller than the cross-sectional area A41 (Figure 1B) of the first layer portion 41 along the XY plane.

[0031] Finally, the second layer portion 42, wiring 5, and connecting layer 6 are formed by filling the openings 42K and 6K respectively and selectively covering a portion of the insulating film 7 with a conductive material. The second layer portion 42, wiring 5, and connecting layer 6 can be formed using sputtering, CVD, electroless plating, and electrolytic plating. Here, it is preferable to adjust the depth of the opening 42K, i.e., the thickness of the portion of the insulating film 7 that covers the sensor chip 3, so that the second height H42 of the second layer portion 42 is smaller than the first height H41. Also, since the opening cross-sectional area along the XY plane in the opening 42K is made smaller than the cross-sectional area A41 along the XY plane in the first layer portion 41, the cross-sectional area A42 along the XY plane in the second layer portion 42 (Figure 1B) can be made smaller than the cross-sectional area A41 of the first layer portion 41.

[0032] With the above steps, the angle sensor device 1 of this embodiment (Figure 1A) is completed.

[0033] [1.3 Action and Effects] As described above, in the angle sensor device 1 of this embodiment, a sensor chip 3 having a sensor substrate 31 having a surface 31FS and a sensor element portion 32 provided on the surface 31FS, and a conductive pillar 4 electrically connected to the sensor element portion 32 are provided adjacent to each other on the surface 2FS of the support substrate 2. Here, the pillar height H1 from the surface 2FS to the upper end 4UT of the conductive pillar 4 is higher than the chip height H2 from the surface 2FS to the surface 31FS. Furthermore, the conductive pillar 4 includes a structure in which a first layer portion 41 having a cross-sectional area A41 and a second layer portion 42 having a cross-sectional area A42 smaller than the cross-sectional area A41 are stacked in order from the surface 2FS side. Therefore, in the angle sensor device 1 of this embodiment, even if the conductive pillar 4 expands due to rising ambient temperature or external heating, the thermal stress on the sensor element portion 32 of the sensor chip 3 is reduced compared to when the cross-sectional area A42 of the second layer portion 42 is substantially the same as the cross-sectional area A41 of the first layer portion 41. Therefore, the detection performance of the angle sensor device 1 is stabilized. In order to miniaturize the angle sensor device 1, the conductive pillar 4 and the sensor chip 3 will be placed closer to each other, but even when such high integration is achieved, thermal stress will have less effect on the detection performance of the sensor element 32. Therefore, the angle sensor device 1 of this embodiment has more stable detection performance and can be further miniaturized.

[0034] However, if the cross-sectional area A42 of the second layer portion 42 is substantially the same as the cross-sectional area A41 of the first layer portion 41, or if the cross-sectional area A42 of the second layer portion 42 is larger than the cross-sectional area A41 of the first layer portion 41, the second layer portion 42 will undergo significant thermal expansion due to rising ambient temperature or external heating. In that case, greater thermal stress will be applied to the sensor element portion 32 of the sensor chip 3, which may adversely affect the measurement accuracy of the sensor element portion 32. In contrast, in this embodiment, the cross-sectional area A42 of the second layer portion 42 is made smaller than the cross-sectional area A41 of the first layer portion 41, thereby suppressing the thermal expansion of the second layer portion 42 located near the sensor element portion 32. As a result, the angle sensor device 1 of this embodiment can ensure more stable detection performance.

[0035] In particular, in the angle sensor device 1, if the second layer portion 42 is located in a position that overlaps with the sensor element portion 32 in the in-plane direction along the surface 2FS, the influence of thermal stress can be reduced more effectively.

[0036] Furthermore, in the angle sensor device 1, if the second distance D2 between the sensor chip 3 and the second layer portion 42 is longer than the first distance D1 between the sensor chip 3 and the first layer portion 41 in the in-plane direction along the surface 2FS, the effects of thermal stress can be reduced more effectively.

[0037] Furthermore, in the angle sensor device 1, by making the second height H42 of the second layer 42 lower than the first height H41 of the first layer 41, the outer diameter of the opening 42K when forming the second layer 42 can be kept small. As a result, the in-plane occupied area of ​​the angle sensor device 1 can be kept small, which is advantageous for miniaturizing the angle sensor device 1.

[0038] Furthermore, in the manufacturing method of the angle sensor device 1 of this embodiment, the first layer portion 41 erected on the surface 2FS of the support substrate 2 is embedded with an insulating film 7, then an opening 42K is formed in the insulating film 7, and a conductive film is further embedded in the opening 42K to form the second layer portion 42. As a result, the distance between the conductive pillar 4 and the sensor chip 3 can be narrowed compared to the manufacturing method of the first reference example of the angle sensor device shown in Figures 8A to 8D.

[0039] Specifically, in the first reference example of the manufacturing method for the angle sensor device, first, as shown in Figure 8A, a terminal portion 121 is formed on the surface 102FS of the support substrate 102, and then, as shown in Figure 8B, a sensor chip 103 is formed on the surface 102FS at a position other than where the terminal portion 121 is provided. The sensor chip 103 is pre-formed on the surface 131FS of the sensor substrate 131 by providing a sensor element portion 132 and a pad portion 133. Next, as shown in Figure 8C, an insulating film 107 is formed to cover the surface 102FS of the support substrate 102 and the sensor chip 103. After that, as shown in Figure 8D, an opening 104K is formed in the insulating film 107 at a position corresponding to the terminal portion 121 in the Z-axis direction, and an opening 106K is formed at a position corresponding to the pad portion 133 in the Z-axis direction. Finally, as shown in Figure 8E, the conductive pillar 104, wiring 105, and connecting layer 106 are formed by filling the openings 104K and 106K respectively and selectively covering a portion of the insulating film 107 with a conductive material. This completes the first reference example angle sensor device 101. However, in the angle sensor device 101 obtained in this way, a large opening 104K is formed when forming the conductive pillar 104, so the outer diameter of the upper end 104UT of the conductive pillar 104 tends to be larger than the outer diameter of the lower end 104BT of the conductive pillar 104. As a result, the in-plane occupied area of ​​the first reference example angle sensor device 101 is often larger than the in-plane occupied area of ​​the angle sensor device 1 of this embodiment. Furthermore, in the manufacturing method of the angle sensor device 101, it is difficult to make the outer diameter near the upper end 104UT of the conductive pillar 104 smaller than the outer diameter near the lower end 104BT of the conductive pillar 104.

[0040] In the angle sensor device 1 of this embodiment, the conductive pillar 4 has a laminated structure of a first layer portion 41 and a second layer portion 42, and by manufacturing the first layer portion 41 and the second layer portion 42 in separate processes, it is possible to make the depth of the opening 42K of the insulating film 7 shallower than the depth of the opening 104K in the first reference example. Therefore, the in-plane occupied area of ​​the angle sensor device 1 can be kept small. Also, since the first layer portion 41 and the second layer portion 42 are manufactured in separate processes, the cross-sectional area A42 of the second layer portion 42 can be made smaller than the cross-sectional area A41 of the first layer portion 41.

[0041] The embodiments described above are provided to facilitate understanding of this disclosure and are not intended to limit the disclosed invention. Therefore, each element disclosed in the above embodiments is intended to include all design modifications and equivalents that fall within the technical scope of this disclosure. In other words, this disclosure is not limited to the above embodiments, and various modifications are possible.

[0042] (First variation) For example, in the angle sensor device 1 of the above embodiment, the case is illustrated in which the cross-sectional area A42 of the second layer portion 42 of the conductive pillar 4 is constant in the height direction (Z-axis direction), that is, the outer diameter of the second layer portion 42 is substantially cylindrical. However, the disclosure is not limited thereto. For example, as in the first modified example angle sensor device 1A shown in Figure 4, the outer diameter of the second layer portion 42 may gradually change in the Z-axis direction. In the configuration example of Figure 4, the outer diameter of the second layer portion 42 gradually increases as it moves away from the surface 2FS of the support substrate 2. In the angle sensor device 1A of Figure 4, the wiring resistance of the conductive pillar 4 can be reduced compared to the angle sensor device 1 shown in Figure 1A and the like.

[0043] (Second variation) Furthermore, in this disclosure, as shown in Figure 5, for example, as in the second modified angle sensor device 1B, the center position of the second layer portion 42 in the XY plane may be set further away from the sensor element portion 32 than the center position of the first layer portion 41. By doing so, the second distance D2 can be made larger compared to the angle sensor device 1 shown in Figure 1A, etc. As a result, in the angle sensor device 1B, the influence of the induced magnetic field generated by the current flowing through the second layer portion 42 on the sensor element portion 32 is reduced compared to the angle sensor device 1. Therefore, the angle sensor device 1B can ensure even more stable detection performance.

[0044] (Third variation) Furthermore, in this disclosure, the device may also be provided with a conductive layer 11 on the upper surface 5FS of the wiring 5 opposite to the support substrate 2, as shown in Figure 6, for example, as in the angle sensor device 1C, which is a third modified example. The conductive layer 11 is, for example, a solder layer, flux, or a Ni / Au two-layer plating, and is used as a connection terminal to the outside.

[0045] (Fourth variation) Furthermore, in this disclosure, the wiring 5 may be multilayered, for example, as shown in Figure 7 as the fourth modified example, the angle sensor device 1D. That is, the wiring 5 may be constructed by stacking multiple wiring layers 51 (51A to 51C) via vias V (V1, V2).

[0046] Furthermore, although a magnetic sensor element was exemplified as the sensor element in the sensor element section in the above embodiment, this disclosure is not limited thereto. Specifically, a strain sensor element such as a metal foil strain gauge can also be used as the sensor element.

[0047] Furthermore, this disclosure may take the following form: <1> A support having a first surface, A sensor chip provided on the first surface having a substrate having a second surface and a sensor element portion provided on the second surface, The conductive pillar provided on the first surface and Equipped with, The pillar height from the first surface to the upper end of the conductive pillar is greater than the chip height from the first surface to the second surface. The conductive pillar includes a structure in which, starting from the first surface side, a first layered portion having a first cross-sectional area and a second layered portion having a second cross-sectional area smaller than the first cross-sectional area are stacked. Sensor device. <2> The second layer is located in a position that overlaps with the sensor element in the in-plane direction along the first surface. the above <1> The sensor device described. <3> In the in-plane direction along the first surface, the second distance between the sensor chip and the second layer is longer than the first distance between the sensor chip and the first layer. the above <1> or <2> The sensor device described. <4> The aforementioned sensor element section includes a sensor element whose sensitivity changes with stress. the above <1> from <3> A sensor device as described in any one of the following. <5> The aforementioned sensor element is a magnetic sensor element or a strain sensor element. the above <4> The sensor device described. <6> The system further includes wiring 5 that electrically connects the sensor element and the conductive pillar. The sensor chip and the conductive pillar are provided in the layer between the support and the wiring, respectively. the above <1> from <5> A sensor device as described in any one of the following. <7> The first height of the first hierarchical section is greater than the second height of the second hierarchical section. the above <1> from <6> A sensor device as described in any one of the following. <8> The wiring further comprises a conductive layer provided on the side of the wiring opposite to the support. the above <6> The sensor device described above. <9> The conductive pillar is provided on the first surface at a position different from the sensor chip and is electrically connected to the sensor element portion. the above <1> from <8> A sensor device as described in any one of the following. <10> To prepare a support having a first surface, Forming conductive pillars on the first surface, A sensor chip having a substrate with a second surface and a sensor element portion provided on the second surface is arranged on the first surface at a position different from the conductive pillar, Forming an insulating film so as to embed the conductive pillar and the sensor chip provided on the first surface, A first opening is formed in the first portion of the insulating film corresponding to the conductive pillar, and a second opening is formed in the second portion of the insulating film corresponding to the sensor element portion. A conductive film is formed to fill the first and second openings and selectively cover a portion of the insulating film, thereby electrically connecting the conductive pillar and the sensor element portion. including A method for manufacturing a sensor device. <11> By making the opening cross-sectional area along the first surface in the first opening smaller than the first cross-sectional area along the first surface in the first layered portion, the second cross-sectional area along the first surface in the second layered portion is made smaller than the first cross-sectional area. the above <10> A method for manufacturing the sensor device described above. [Explanation of Symbols]

[0048] 1...Angle sensor device, 2...Support substrate, 21...Terminal section, 2FS...Surface, 3,3A,3B...Sensor chip, 31...Sensor substrate, 31FS...Surface, 32...Sensor element section, 33...Pad section, 4...Conductive pillar, 4BT...Lower end, 4UT...Upper end, 41...First layer section, 42...Second layer section, 5...Wiring, 6...Connection layer, 7...Insulating film, 8...Full bridge circuit, 9...Calculation circuit, E1~E4...Magnetic sensor elements, R1~R4...Resistor section, T1~T4...Connection point.

Claims

1. A support having a first surface, A sensor chip provided on the first surface having a substrate having a second surface and a sensor element portion provided on the second surface, The conductive pillar provided on the first surface and Equipped with, The conductive pillar includes a structure in which, starting from the first surface side, a first layered portion having a first cross-sectional area and a second layered portion having a second cross-sectional area smaller than the first cross-sectional area are stacked. The second layer is located in a position that overlaps with the sensor element in the in-plane direction along the first surface. Sensor device.

2. In the in-plane direction along the first surface, the second distance between the second layer and the substrate of the sensor chip is longer than the first distance between the first layer and the substrate of the sensor chip. The sensor device according to claim 1.

3. The aforementioned sensor element section includes a sensor element whose sensitivity changes with stress. The sensor device according to claim 1 or claim 2.

4. The aforementioned sensor element is a magnetic sensor element or a strain sensor element. The sensor device according to claim 3.

5. The system further includes wiring that electrically connects the sensor element and the conductive pillar. The sensor chip and the conductive pillar are provided in the layer between the support and the wiring, respectively. The sensor device according to claim 1 or claim 2.

6. The first height of the first hierarchical section is greater than the second height of the second hierarchical section. The sensor device according to claim 1 or claim 2.

7. The wiring further comprises a conductive layer provided on the side of the wiring opposite to the support. The sensor device according to claim 5.

8. The conductive pillar is provided on the first surface at a position different from the sensor chip and is electrically connected to the sensor element portion. The sensor device according to claim 1 or claim 2.

Images