Multilayer electronic components

Abstract

To provide a multilayer electronic component with improved capacitance characteristics, superior reliability, and reduced structural defects. [Solution] The stacked electronic component includes a body containing a dielectric layer 111 and internal electrodes, and external electrodes disposed on the body. The dielectric layer includes a plurality of hemispherical first protrusions 141 that protrude from only one of the first and second surfaces and include a first opening. At least a portion of the plurality of first protrusions are spaced apart from each other in a second direction perpendicular to the first direction. When the radius of the first opening is R and the distance between adjacent first protrusions in the second direction is G, R and G satisfy 0.3 μm ≤ R ≤ 3.0 μm and 0.5 × R ≤ G ≤ 3.0 × R.

Description

[Technical Field]

[0001] This invention relates to a stacked electronic component. [Background technology]

[0002] A multilayer ceramic capacitor (MLCC), a type of multilayer electronic component, is a chip-type capacitor that is mounted on the printed circuit boards of various electronic products such as liquid crystal displays (LCDs), plasma display panels (PDPs), computers, smartphones, and mobile phones, and plays the role of charging or discharging electricity.

[0003] Such multilayer ceramic capacitors can be used as components in various electronic devices due to their advantages of being small, yet guaranteeing high capacitance, and being easy to implement. As various electronic devices such as computers and mobile devices become smaller and more powerful, the demand for smaller and higher-capacitance multilayer ceramic capacitors is increasing.

[0004] As multilayer ceramic capacitors become smaller and thinner, methods to improve capacitance characteristics are being applied by either creating a larger area for capacitance formation, increasing the number of layers through thinning, or devising materials or material formulations with high dielectric constants.

[0005] However, there are limitations to increasing the capacitance formation area or the number of layers in order to miniaturize components, and finding a material or material formulation with a high dielectric constant takes a long time. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 8-148379 [Overview of the project] [Problems that the invention aims to solve]

[0007] One of the problems that this invention aims to solve is to provide a stacked electronic component with improved capacitance characteristics.

[0008] One of the problems that this invention aims to solve is to provide a highly reliable stacked electronic component.

[0009] One of the problems that this invention aims to solve is to provide a stacked electronic component in which structural defects have been improved.

[0010] However, some of the problems that the present invention aims to solve are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Means for solving the problem]

[0011] A stacked electronic component according to one embodiment of the present invention includes a dielectric layer and internal electrodes arranged alternately with the dielectric layer in a first direction, and comprises a body including first and second surfaces facing each other in the first direction, third and fourth surfaces connected to the first and second surfaces and facing each other in a second direction, and fifth and sixth surfaces connected to the first, second, third and fourth surfaces and facing each other in a third direction, and external electrodes disposed on the body, wherein the dielectric layer includes a plurality of hemispherical first protrusions that protrude only from one of the first and second surfaces and include a first opening, the plurality of first protrusions are spaced apart from each other including in the second direction, and when the radius of the first opening is R1 and the distance between adjacent first protrusions in the second direction is G1, R1 and G1 can satisfy 0.3 μm ≤ R1 ≤ 3.0 μm and 0.5 × R1 ≤ G1 ≤ 3.0 × R1.

[0012] Another embodiment of the present invention provides a stacked electronic component which includes a dielectric layer and internal electrodes arranged alternately with the dielectric layer in a first direction, and comprises a body which includes first and second surfaces facing each other in the first direction, third and fourth surfaces connected to the first and second surfaces and facing each other in a second direction, and fifth and sixth surfaces connected to the first, second, third and fourth surfaces and facing each other in a third direction, and external electrodes disposed on the body, wherein the internal electrodes include a plurality of hemispherical second protrusions which protrude only from one of the first and second surfaces and include a second opening, and the plurality of second protrusions which are spaced apart from each other including the second direction, and when the radius of the second opening is R2 and the distance between adjacent second protrusions in the second direction is G3, R2 and G3 can satisfy 0.3 μm ≤ R2 ≤ 3.0 μm and 0.5 × R2 ≤ G3 ≤ 3.0 × R2. [Effects of the Invention]

[0013] One of the several effects of the present invention is to improve the capacitance characteristics of multilayer electronic components.

[0014] One of the several effects of the present invention is to improve the reliability of multilayer electronic components.

[0015] One of the several effects of the present invention is that it can improve structural defects that may occur during the manufacturing of multilayer electronic components.

[0016] However, the diverse yet beneficial advantages and effects of the present invention are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Brief explanation of the drawing]

[0017] [Figure 1] A schematic perspective view of a stacked electronic component according to one embodiment of the present invention is shown. [Figure 2] A schematic cross-sectional view along the line I-I' in Figure 1 is shown. [Figure 3] A schematic cross-sectional view along the line II-II' in Figure 1 is shown. [Figure 4] A cross-sectional view taken along line III-III' of FIG. 1 is schematically shown. [Figure 5] A plan view of the dielectric layer is schematically shown. DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION

[0018] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Therefore, the shapes and sizes of elements in the drawings may be exaggerated for clearer explanation, and elements denoted by the same reference numerals in the drawings are the same elements.

[0019] In order to clearly describe the present invention in the drawings, parts unrelated to the description are omitted, and the sizes and dimensions of each component shown in the drawings are arbitrarily shown for convenience of description, and thus the present invention is not necessarily limited to what is illustrated. Components having the same function within the scope of the same idea will be described with the same reference numerals. Furthermore, throughout the specification, when a part is stated to "comprise" a certain component, this does not exclude other components, but may further include other components, unless specifically stated to the contrary.

[0020] In the drawings, the Z direction can be defined as the thickness direction or the first direction, the X direction as the length direction or the second direction, and the Y direction as the width direction or the third direction. The lamination direction may be the thickness direction or the width direction.

[0021] In the present invention, thickness may mean the size in the first direction, length the size in the second direction, and width the size in the third direction.

[0022] Multilayer electronic component Figure 1 schematically shows a perspective view of a stacked electronic component according to one embodiment of the present invention, Figure 2 schematically shows a cross-sectional view along the line I-I' in Figure 1, Figure 3 schematically shows a cross-sectional view along the line II-II' in Figure 1, Figure 4 schematically shows a cross-sectional view along the line III-III' in Figure 1, and Figure 5 schematically shows a plan view of the dielectric layer.

[0023] Hereinafter, with reference to Figures 1 to 5, a multilayer electronic component according to one embodiment of the present invention will be described in detail. However, although a multilayer ceramic capacitor will be described as an example of a multilayer electronic component, the present invention can also be applied to various electronic products that utilize dielectric compositions, such as inductors, piezoelectric elements, varistors, or thermistors.

[0024] A stacked electronic component 100 according to one embodiment of the present invention includes a dielectric layer 111 and internal electrodes 121, 122 arranged alternately with the dielectric layer 111 in a first direction, a body 110 including a first surface 1 and a second surface 2 facing each other in the first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and facing each other in a second direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1, the second surface 2, the third surface 3 and the fourth surface 4 and facing each other in a third direction, and an external electrode 131 disposed on the body 110. The dielectric layer 111 includes 132 and a plurality of hemispherical first protrusions 141 that protrude only from one of the first surface 1 and the second surface 2 and include a first opening, at least a portion of the plurality of first protrusions 141 that are spaced apart from each other in the second direction, and when the radius of the first opening is R1 and the distance between adjacent first protrusions 141 in the second direction is G1, then R1 and G1 can satisfy 0.3 μm ≤ R1 ≤ 3.0 μm and 0.5 × R1 ≤ G1 ≤ 3.0 × R1.

[0025] Furthermore, a stacked electronic component 100 according to another embodiment of the present invention includes a dielectric layer 111 and internal electrodes 121, 122 arranged alternately with the dielectric layer 111 in a first direction, a body 110 including a first surface 1 and a second surface 2 facing each other in the first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and facing each other in a second direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1, the second surface 2, the third surface 3 and the fourth surface 4 and facing each other in a third direction, and an external electrode 13 disposed on the body 110 The internal electrodes 121 and 122 include 1, 132, and each internal electrode 121 and 122 protrudes only from one of the first surface 1 and the second surface 2, and includes a plurality of hemispherical second protrusions 142 including a second opening, at least a portion of the plurality of second protrusions 142 are spaced apart from each other in the second direction, and when the radius of the second opening is R2 and the distance between adjacent second protrusions 142 in the second direction is G3, then R2 and G3 can satisfy 0.3 μm ≤ R2 ≤ 3.0 μm and 0.5 × R2 ≤ G3 ≤ 3.0 × R2.

[0026] The main body 110 may have dielectric layers 111 and internal electrodes 121 and 122 stacked alternately.

[0027] More specifically, the main body 110 may include a capacitance forming section Ac which includes first internal electrodes 121 and second internal electrodes 122 arranged alternately inside the main body 110 and facing each other with a dielectric layer 111 in between, thereby forming a capacitance.

[0028] There are no particular restrictions on the specific shape of the main body 110, but as shown in the figure, the main body 110 can be a hexahedron or a similar shape. Due to the shrinkage of the ceramic particles contained in the main body 110 during the firing process, the main body 110 may not be a perfectly straight hexahedron, but it may be substantially hexahedron-shaped.

[0029] The main body 110 may have a first surface 1 and a second surface 2 opposing each other in the thickness direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and opposing each other in the length direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1, the second surface 2, the third surface 3 and the fourth surface 4 and opposing each other in the width direction.

[0030] The plurality of dielectric layers 111 forming the main body 110 are in a fired state, and the boundary between adjacent dielectric layers 111 can be integrated to such an extent that it is difficult to confirm without using a Scanning Electron Microscope (SEM).

[0031] The raw material for forming the dielectric layer 111 is not limited as long as sufficient capacitance can be obtained. Generally, perovskite (ABO3) materials can be used, for example, barium titanate-based materials, lead composite perovskite-based materials, strontium titanate-based materials, etc. can be used. The barium titanate-based material may include BaTiO3-based ceramic particles. Examples of the ceramic particles include BaTiO3, and (Ba 1-x Ca x )TiO3 (0<x<1), Ba(Ti 1-y Ca y )O3 (0<y<1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0<x<1, 0<y<1) or Ba(Ti 1-y Zr y )O3 (0<y<1), etc.

[0032] In addition, for the raw material forming the dielectric layer 111, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to particles such as barium titanate (BaTiO3) according to the purpose of the present invention.

[0033] On the other hand, in order to distinguish it from the dielectric layers included in the cover portions 112, 113 and the side margin portions 114, 115 described later, the dielectric layer included in the capacitance forming portion Ac can be defined as the first dielectric layer, the dielectric layers included in the cover portions 112, 113 can be defined as the second dielectric layer, and the dielectric layers included in the side margins 114, 115 can be defined as the third dielectric layer.

[0034] Furthermore, the first to third dielectric layers can be formed using a dielectric material such as barium titanate (BaTiO3), and can therefore contain a dielectric microstructure after firing. The dielectric microstructure can include multiple crystal grains, grain boundaries located between adjacent crystal grains, and triple points located at points where three or more grain boundaries meet, and can contain multiple crystal grains, grain boundaries, and triple points.

[0035] The thickness td of the dielectric layer 111 does not need to be particularly limited.

[0036] To ensure the reliability of the multilayer electronic component 100 in a high-voltage environment, the thickness td of the dielectric layer 111 may be 10.0 μm or less, 9.0 μm or less, 8.0 μm or less, 7.0 μm or less, 6.0 μm or less, or 5.0 μm or less. Furthermore, to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness td of the dielectric layer 111 may be 3.0 μm or less. To more easily achieve ultra-miniaturization and high capacitance, the thickness td of the dielectric layer 111 may be 1.0 μm or less, preferably 0.6 μm or less, 0.5 μm or less, and more preferably 0.4 μm or less.

[0037] Here, the thickness td of the dielectric layer 111 can mean the thickness td of the dielectric layer 111 that is placed between the first internal electrode 121 and the second internal electrode 122.

[0038] In this case, the thickness td of the dielectric layer 111 may be a concept that includes the thickness td of any one of the multiple dielectric layers 111, or it may be a concept that includes the respective thickness td of all of the dielectric layers 111.

[0039] Furthermore, the thickness td of the dielectric layer 111 may mean the average thickness td of a single dielectric layer 111, the average thickness td of each of the multiple dielectric layers 111, or the average thickness td of the multiple dielectric layers 111.

[0040] The average thickness td of the dielectric layer 111 can be measured by scanning an image of the cross-section of the main body 110 in the length and thickness directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average thickness td of a single dielectric layer 111 can mean the average value calculated by measuring the thickness of a single dielectric layer 111 at five equally spaced points in the length direction in the scanned image. These five equally spaced points can be specified in the capacitance forming section Ac, and it is preferable to measure at other points where no protrusions are located. Furthermore, by extending this measurement of average values ​​to three dielectric layers 111 and measuring the average values, the average thickness td of multiple dielectric layers 111 can be further generalized.

[0041] On the other hand, the dielectric layer 111 may include a plurality of first protrusions 141.

[0042] Because the dielectric layer 111 includes the first protrusion 141, the internal electrodes 121 and 122 can include the second protrusion 142, which will be described later. This increases the overlap area where capacitance is formed, thereby improving the capacitance characteristics.

[0043] The first projection 141 may protrude in only one of the first directions, for example, toward the first surface 1.

[0044] Since the first protrusion 141 protrudes in only one direction, alignment can be easily performed when stacking the dielectric layer 111 and the internal electrodes 121 and 122, and short circuits between adjacent internal electrodes 121 and 122 can be prevented.

[0045] The first projection 141 may be hemispherical in shape with radius R1 and height H1.

[0046] Here, a hemispherical shape can include a typical hemisphere where the radius and height are the same (R1=H1) and an atypical hemisphere where the radius and height are different (R1≠H1).

[0047] Furthermore, the radius of a hemisphere can represent the radius of the circle that forms the cross-section when a sphere is cut in half, and it can also represent the radius of the opening when the circle that forms the cross-section is used as the opening when a sphere is cut in half.

[0048] In other words, the first projection 141 may be a hemispherical shape including a first opening with radius R1 and height H1, and may be at least one of the shapes of a standard hemisphere where radius R1 and height H1 are the same (R1=H1), and an atypical hemisphere where radius R1 and height H1 are different.

[0049] Furthermore, when a plane including the second and third directions is used as a reference and a direction different from the second and third directions is defined as the fourth direction, the multiple first protrusions 141 can be arranged spaced apart in the second, third, and fourth directions. For example, the multiple first protrusions 141 can have a regular pattern by being spaced apart by the same distance G in the second direction, spaced apart by the same distance G in the third direction, or spaced apart by the same distance G in the fourth direction. In this case, it is preferable that the spacing in the second direction, the spacing in the third direction, and the spacing in the fourth direction are spaced apart by the same distance G, but this is not limited to this, and they may be different from each other, or only some of the spacings may be the same. More specifically, the regular pattern of the multiple first protrusions 141 can correspond to, for example, an embossing pattern.

[0050] On the other hand, when the radius of the first opening is R1 and the distance between adjacent first protrusions 141 in the second direction is G1, R1 and G1 can satisfy 0.3 μm ≤ R1 ≤ 3.0 μm and 0.5 × R1 ≤ G1 ≤ 3.0 × R1.

[0051] By satisfying the conditions 0.3μm≦R1≦3.0μm and 0.5×R1≦G1≦3.0×R1 for R1 and G1 respectively, it becomes possible to easily stack dielectric layers and internal electrodes while maintaining excellent capacitance characteristics. Here, excellent capacitance characteristics can be said to mean that the capacitance characteristics are improved by 30% or more compared to conventional multilayer electronic components that do not include the first protrusion 141.

[0052] If R1 is less than 0.3 μm, it may be difficult to align the dielectric layer and internal electrodes, making manufacturing difficult or potentially resulting in product defects. If R1 exceeds 3.0 μm, the spacing between adjacent first protrusions 141 will be wider, which may result in an unsatisfactory improvement in capacitance characteristics.

[0053] Furthermore, if G1 is less than 0.5 × R1, it may be difficult to align the dielectric layer and internal electrodes, making manufacturing difficult or potentially resulting in product defects. If G1 exceeds 3.0 × R1, the spacing between adjacent first protrusions 141 will increase, potentially resulting in poor performance in improving capacitance characteristics.

[0054] On the other hand, when the height of the first protrusion 141 is H1, the condition 0.3 μm ≤ H1 can be satisfied, and although there is no particular upper limit, it can be less than or equal to half the thickness td of the dielectric layer 111 (H1 ≤ 1 / 2 × td), or H1 ≤ 3.0 μm can be satisfied.

[0055] If H1 is less than 0.3 μm, the capacitance characteristics may not be sufficiently improved. If H1 is greater than 1 / 2 × td or greater than 3.0 μm, the internal electrodes 121 and 122 may break, or a short circuit may occur between adjacent internal electrodes 121 and 122.

[0056] In the present invention, the method for measuring the height H1 of the first projection 141, the radius R1 of the first opening, the distance G1 between adjacent first projections 141 in the second direction, or the distance G2 between adjacent second projections 142 in the third direction may be as follows, but is not limited thereto.

[0057] The height H1 of the first protrusion 141 can be determined by measuring the difference in height between the first opening and the lowest surface of the internal electrode on which the protrusion is formed, when the cross-section of the main body 110 in the first and second directions is observed with a scanning electron microscope (SEM).

[0058] The radius R1 of the first aperture can be determined by measuring the diameter of the first aperture and multiplying it by 1 / 2 when observing the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM), or by measuring from the center of the first aperture to the endpoint of the first aperture.

[0059] The distance G1 between adjacent first protrusions 141 can be determined by measuring the distance between one protrusion and the adjacent protrusion when observing the cross-section of the main body 110 in the first and second directions using a scanning electron microscope (SEM). Similarly, the distance G2 between adjacent first protrusions 141 in the third direction can be determined by measuring it in the same manner.

[0060] Furthermore, when G2 is the distance between adjacent first protrusions 141 in the third direction, R1 and G2 can satisfy 0.5 × R1 ≤ G2 ≤ ​​3.0 × R1.

[0061] The content relating the radius R1 of the first opening to the distance G2 between adjacent first protrusions 141 in the third direction may overlap with the content relating the radius R1 of the first opening to the distance G1 between adjacent first protrusions 141 in the second direction, so it is omitted, and it is preferable that G1 and G2 are substantially the same.

[0062] Furthermore, the first protrusion 141 adjacent in the fourth direction can be positioned between the first protrusion 141 adjacent in the second direction and the first protrusion 141 adjacent in the third direction.

[0063] More specifically, when we say that a first projection 141 is adjacent in the fourth direction, it can mean that it is located at a distance in the second direction equal to half the distance G1 between any first projection 141 adjacent in the second direction, and at a distance in the third direction equal to half the distance G2 between any first projection 141 adjacent in the third direction. Referring to the drawings, this can mean that it is located in the diagonal direction, but it is not limited to this.

[0064] The internal electrodes 121 and 122 may be stacked alternately with the dielectric layer 111.

[0065] The internal electrodes 121 and 122 may include a first internal electrode 121 and a second internal electrode 122, which are arranged alternately facing each other across the dielectric layer 111 that constitutes the main body 110, and can be exposed on the third surface 3 and the fourth surface 4 of the main body 110, respectively.

[0066] More specifically, the first internal electrode 121 can be separated from the fourth surface 4 and exposed via the third surface 3, and the second internal electrode 122 can be separated from the third surface 3 and exposed via the fourth surface 4. The first external electrode 131 is positioned on the third surface 3 of the main body 110 and connected to the first internal electrode 121, and the second external electrode 132 is positioned on the fourth surface 4 of the main body 110 and connected to the second internal electrode 122.

[0067] In other words, the first internal electrode 121 is not connected to the second external electrode 132, but can be connected to the first external electrode 131, and the second internal electrode 122 is not connected to the first external electrode 131, but can be connected to the second external electrode 132. In this case, the first internal electrode 121 and the second internal electrode 122 can be electrically isolated from each other by the dielectric layer 111 placed in between them.

[0068] On the other hand, the method for forming the dielectric layer 111 and / or internal electrodes 121, 122 including hemispherical protrusions may be as follows, but is not limited thereto. First, a first ceramic green sheet printed with a first internal electrode paste is provided, and an object with an embossed pattern or similar unevenness (e.g., a steel plate) is pressed onto it to form hemispherical protrusions projecting toward the first surface 1. At this time, a first protrusion 141 can be formed on the first ceramic green sheet, and a second protrusion 142 can be formed on the printed first internal electrode paste. Subsequently, a second ceramic green sheet printed with a second internal electrode paste is laminated, and an object with an embossed pattern or similar unevenness is pressed onto it to form hemispherical protrusions projecting toward the first surface 1. In this manner, protrusions can be formed on a ceramic green sheet printed with an internal electrode paste, and these sheets can be alternately stacked and then fired to form a main body 110 including a dielectric layer 111 and / or internal electrodes 121, 122 on which first protrusions 141 and second protrusions 142 are formed. Here, the internal electrode paste can become the internal electrodes 121, 122 after firing, and the ceramic green sheet can become the dielectric layer 111 after firing.

[0069] While screen printing or gravure printing can be used as printing methods for conductive paste for internal electrodes, the present invention is not limited to these methods.

[0070] The materials forming the internal electrodes 121 and 122 are not particularly limited, and any material with excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 may include one or more of the following: nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0071] On the other hand, the thickness te of the internal electrodes 121 and 122 does not need to be particularly limited, and in the following description of the thickness te of the internal electrodes 121 and 122, it can mean the thickness te of the first internal electrode 121 and the second internal electrode 122, respectively.

[0072] To ensure the reliability of the multilayer electronic component 100 in a high-voltage environment, the thickness te of the internal electrodes 121 and 122 may be 3.0 μm or less. Furthermore, to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness te of the internal electrodes 121 and 122 may be 1.0 μm or less. To more easily achieve ultra-miniaturization and high capacitance, the thickness te of the internal electrodes 121 and 122 may be 0.6 μm or less, 0.5 μm or less, and more preferably 0.4 μm or less.

[0073] In this case, the thickness te of the internal electrodes 121 and 122 may be a concept that includes the thickness te of at least one of the multiple internal electrodes 121 and 122, or it may be a concept that includes the thickness te of all of the internal electrodes 121 and 122.

[0074] In this case, the thickness te of the internal electrodes 121 and 122 may be a concept that includes the thickness te of at least one of the multiple internal electrodes 121 and 122, or it may be a concept that includes the thickness te of each of the internal electrodes 121 and 122.

[0075] Furthermore, the thickness te of the internal electrodes 121 and 122 may mean the average thickness te of one internal electrode 121 or 122, or the average thickness te of each of the multiple internal electrodes 121 or 122, or the average thickness te of the multiple internal electrodes 121 or 122.

[0076] The average thickness te of the internal electrodes 121 and 122 can be measured by scanning an image of the cross-section of the main body 110 in the length and thickness directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average thickness te of one internal electrode 121 or 122 can be calculated as the average value obtained by measuring the thickness of one internal electrode at five equally spaced points in the length direction in the scanned image. These five equally spaced points can be specified in the capacitance forming section Ac, and it is preferable to measure at points other than those where protrusions are not located. Furthermore, by extending this measurement of average values ​​to three internal electrodes 121 or 122, the average thickness te of multiple internal electrodes 121 or 122 can be further generalized.

[0077] On the other hand, the internal electrodes 121 and 122 may include a plurality of second protrusions 142, and the second protrusions 142 may be the same as those described for the first protrusion 141. In other words, if the first protrusion 141 and the second protrusion 142 have a preferred structure, they may be interpreted as a single protrusion, but are not limited to this.

[0078] By including the second protrusion 142 in the internal electrodes 121 and 122, the overlap area where capacitance is formed is increased, thereby improving capacitance characteristics.

[0079] The second projection 142 may protrude in only one of the first directions, for example, toward the first surface 1.

[0080] Since the second protrusion 142 protrudes in only one direction, alignment can be easily performed when stacking the dielectric layer 111 and the internal electrodes 121 and 122, and short circuits between adjacent internal electrodes 121 and 122 can be prevented.

[0081] The second projection 142 may have a hemispherical shape with a radius of R2 and a height of H2.

[0082] Here, a hemispherical shape can include a typical hemisphere where the radius and height are the same (R2=H2), and an atypical hemisphere where the radius and height are different (R2≠H2).

[0083] In other words, the second projection 142 may be a hemispherical shape including a second opening with radius R2 and height H2, and may be at least one of the shapes of a regular hemisphere where radius R2 and height H2 are the same (R2=H2), and an atypical hemisphere where radius R2 and height H2 are different.

[0084] Furthermore, the multiple second protrusions 142 may be spaced apart in the second, third, and fourth directions, and the second to fourth directions may be the same as those described for the first protrusion 141. More specifically, for example, the multiple second protrusions 142 can have a regular pattern by being spaced apart by the same distance G in the second direction, the same distance G in the third direction, or the same distance G in the fourth direction. In this case, it is preferable that the spacing in the second direction, the spacing in the third direction, and the spacing in the fourth direction are the same distance G, but this is not limited to this, and they may be different from each other, or only some of the spacings may be the same. More specifically, the regular pattern of the multiple second protrusions 142 can correspond to, for example, an embossing pattern.

[0085] On the other hand, when the radius of the second opening is R2 and the distance between adjacent second protrusions 142 in the second direction is G2, R2 and G2 can satisfy 0.3 μm ≤ R2 ≤ 3.0 μm and 0.5 × R2 ≤ G2 ≤ ​​3.0 × R2.

[0086] By satisfying the conditions 0.3μm≦R2≦3.0μm and 0.5×R2≦G2≦3.0×R2 for R2 and G2 respectively, it becomes possible to easily stack dielectric layers and internal electrodes while maintaining excellent capacitance characteristics. Here, excellent capacitance characteristics can be said to mean that the capacitance characteristics are improved by 30% or more compared to conventional multilayer electronic components that do not include the second protrusion 142.

[0087] If R2 is less than 0.3 μm, it may be difficult to align the dielectric layer and internal electrodes, making manufacturing difficult or potentially resulting in product defects. If R2 exceeds 3.0 μm, the spacing between adjacent second protrusions 142 will increase, potentially resulting in poor performance in improving capacitance characteristics.

[0088] Furthermore, if G2 is less than 0.5 × R2, it may be difficult to align the dielectric layer and internal electrodes, making manufacturing difficult or potentially resulting in product defects. If G2 exceeds 3.0 × R2, the spacing between adjacent second protrusions 142 will increase, potentially resulting in poor performance in improving capacitance characteristics.

[0089] On the other hand, when the height of the second protrusion 142 is H2, the condition 0.3 μm ≤ H2 can be satisfied, and although there is no particular upper limit, it can be less than or equal to half the thickness td of the dielectric layer 111 (H2 ≤ 1 / 2 × td), or H2 ≤ 3.0 μm can be satisfied.

[0090] If H1 is less than 0.3 μm, the capacitance characteristics may not be sufficiently improved, and if H2 is greater than 1 / 2 × td or greater than 3.0 μm, the internal electrodes 121 and 122 may break, or a short circuit may occur between adjacent internal electrodes 121 and 122.

[0091] In the present invention, the method for measuring the height H2 of the second projection 142, the radius R2 of the second opening, the distance G3 between adjacent second projections 142 in the second direction, or the distance G4 between adjacent second projections 142 in the third direction is the same as that for the first projection 141 described above, and therefore will be omitted.

[0092] Furthermore, the second protrusion 142 adjacent in the fourth direction may be positioned between the second protrusion 142 adjacent in the second direction and the second protrusion 142 adjacent in the third direction.

[0093] More specifically, the statement that the second protrusions 142 are adjacent in a fourth direction may mean that each second protrusion 142 is located at a position spaced apart in the second direction by half of the distance G2 between any given second protrusion 142 and an adjacent second protrusion 142 in the second direction, and spaced apart in the third direction by half of the distance G2 between the any given second protrusion 142 and an adjacent second protrusion 142 in the third direction. When explained with reference to the drawings, this may mean that the second protrusions are positioned in a diagonal direction, but is particularly not limited thereto.

[0094] The following [Table 1] shows capacitance characteristics expressed as percentages based on the radius R of the opening (where 0.3 μm ≦ R ≦ 3.0 μm) and the distance G between adjacent protrusions. It lists calculated improvement values of capacitance characteristics expected when assuming that the protrusions are regular hemispheres (R=H). The calculation was performed with the capacitance characteristic of a conventional multilayer electronic component in which no protrusions are formed set as a reference value (100%).

[0095]

Table 1

[0096] Even when protrusions are formed, if the gap G between the protrusions is less than 0.5×R, it is expected that the alignment of dielectric layers and internal electrodes is difficult, and lamination cannot be performed.

[0097] When the gap G between protrusions is 0.5×R to 3.0×R, it is expected that the capacitance characteristic will increase by 31% or more compared to a conventional multilayer electronic component with no protrusions formed.

[0098] When the gap G between protrusions is 3.5×R, it is expected that the capacitance characteristic will increase by 29% or more compared to a conventional multilayer electronic component with no protrusions formed. This value falls short of the improvement in capacitance characteristic that the present invention aims to achieve.

[0099] The thickness td of at least one of the plurality of dielectric layers 111 and the thickness te of at least one of the plurality of internal electrodes 121 and 122 may satisfy 2×te < td.

[0100] In other words, the thickness td of a single dielectric layer 111 may be greater than twice the thickness te of a single internal electrode 121, 122. Preferably, the average thickness td of multiple dielectric layers 111 may be greater than twice the average thickness te of multiple internal electrodes 121, 122.

[0101] Generally, the main issue with high-voltage electrical components is reliability problems caused by a decrease in the breakdown voltage (BDV) under high-voltage environments.

[0102] Therefore, in order to prevent a decrease in dielectric breakdown voltage under high-voltage conditions, the dielectric breakdown voltage characteristics can be improved by making the average thickness td of the dielectric layer 111 greater than twice the average thickness te of the internal electrodes 121 and 122.

[0103] If the average thickness td of the dielectric layer 111 is less than or equal to twice the average thickness te of the internal electrodes 121 and 122, the dielectric breakdown voltage may decrease, and a short circuit between the internal electrodes may occur.

[0104] On the other hand, the main body 110 may include cover portions 112 and 113 that are positioned on both end surfaces (end-surfaces) in the thickness direction of the volume forming portion Ac.

[0105] Specifically, it may include a first cover portion 112 positioned on one surface of the volume-forming portion Ac in the thickness direction, and a second cover portion 113 positioned on the other surface of the volume-forming portion Ac in the thickness direction. More specifically, for example, it may include a first cover portion 112 positioned at the bottom of the volume-forming portion Ac in the thickness direction, and a second cover portion 113 positioned at the top of the volume-forming portion Ac in the thickness direction.

[0106] The first cover portion 112 and the second cover portion 113 can be formed by arranging or stacking a single second dielectric layer or two or more second dielectric layers in the thickness direction on the upper and lower surfaces of the capacitance forming portion Ac, respectively, and can essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0107] The first cover portion 112 and the second cover portion 113 do not include internal electrodes 121 and 122 and may contain the same dielectric material as the first dielectric layer 111 of the capacitance forming portion Ac. That is, the first cover portion 112 and the second cover portion 113 may contain a dielectric material, for example, a barium titanate (BaTiO3) based dielectric material.

[0108] On the other hand, the thickness tc of the cover portions 112 and 113 does not need to be particularly limited, and in the following description of the thickness tc of the cover portions 112 and 113, it can mean the thickness tc of the first cover portion 112 and the second cover portion 113, respectively.

[0109] However, in order to more easily achieve miniaturization and high capacity of the stacked electronic component 100, the thickness tc of the cover portions 112 and 113 may be 100 μm or less, or 50 μm or less, preferably 30 μm or less, and more preferably 20 μm or less for ultra-small products.

[0110] Here, the thickness tc of the cover portions 112 and 113 can be said to represent the average thickness of the cover portions 112 and 113.

[0111] Furthermore, the average thickness tc of the cover portions 112 and 113 may mean the average thickness tc of the first cover portion 112 and the second cover portion 113, respectively, or it may mean the average thickness tc of the first cover portion 112 and the second cover portion 113.

[0112] The average thickness tc of the cover sections 112 and 113 can be measured by scanning an image of the cross-section of the main body 110 in the length and thickness directions using a scanning electron microscope (SEM) at 10,000x magnification. More specifically, it can mean the average value calculated by measuring the thickness at five equally spaced points in the length direction in an image scanned from one cover section 112 or 113.

[0113] Furthermore, the average thickness tc of the cover portions 112 and 113 measured by the method described above can be substantially the same as the average thickness of the cover portions 112 and 113 in the cross-section in the width and thickness directions of the main body 110.

[0114] On the other hand, the stacked electronic component 100 may include side margin portions 114 and 115, which are the widthwise edge regions of the internal electrodes 121 and 122.

[0115] More specifically, the side margin portions 114 and 115 may include a first side margin portion 114 positioned between the internal electrodes 121 and 122 and the fifth surface 5, and a second side margin portion 115 positioned between the internal electrodes 121 and 122 and the sixth surface 6.

[0116] As shown in the figure, the side margins 114 and 115 can refer to the region between the boundary surface of the body 110 and both ends in the width direction of the first internal electrode 121 and the second internal electrode 122, with respect to the cross-section in the width and thickness direction of the body 110.

[0117] The side margins 114 and 115 can refer to the ceramic green sheet region excluding the internal electrodes 121 and 122 when the paste for the internal electrodes is applied to the ceramic green sheet applied to the volume forming section Ac, excluding the areas that will become the side margins 114 and 115.

[0118] However, the invention is not limited to this, and the side margin portions 114 and 115 can be formed by applying conductive paste to the ceramic green sheet applied to the capacitance forming portion Ac, except for the areas where the side margin portions 114 and 115 are formed, to form the internal electrodes 121 and 122. In order to suppress the step caused by the internal electrodes 121 and 122, the main body 110 can be cut so that the laminated internal electrodes 121 and 122 are exposed on the fifth surface 5 and sixth surface 6 of the main body 110, and then a single third dielectric layer or two or more third dielectric layers can be formed by arranging or laminating them in the width direction on both end surfaces (end-surfaces) in the width direction of the capacitance forming portion Ac.

[0119] The side margins 114 and 115 can essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0120] The side margin portions 114 and 115 do not include the internal electrodes 121 and 122 and may contain the same material as the first dielectric layer 111. That is, the first side margin portion 114 and the second side margin portion 115 may contain a dielectric material, for example, a barium titanate (BaTiO3) based dielectric material.

[0121] On the other hand, the widths wm of the side margins 114 and 115 do not need to be particularly limited, and in the following description of the widths wm of the side margins 114 and 115, it is possible to mean the widths wm of the first side margin 114 and the second side margin 115, respectively.

[0122] To more easily achieve miniaturization and increased capacitance of the stacked electronic component 100, the width wm of the side margins 114 and 115 may be 50 μm or less, preferably 30 μm or less, and more preferably 20 μm or less for ultra-small products.

[0123] Here, the width wm of the side margins 114 and 115 can be said to represent the average width wm of the side margins 114 and 115.

[0124] Furthermore, the average width wm of the side margins 114 and 115 may refer to the average width wm of the first side margin 114 and the second side margin 115, respectively, or it may refer to the average width wm of the first side margin 114 and the second side margin 115.

[0125] The average width wm of the side margins 114 and 115 can be measured by scanning an image of the cross-section of the main body 110 in the width and thickness directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, it can mean the average value calculated by measuring the width at five equally spaced points in the thickness direction in an image scanned from one side margin 114 or 115.

[0126] One embodiment of the present invention describes a structure in which a stacked electronic component 100 has two external electrodes 131 and 132. However, the number and shape of the external electrodes 131 and 132 can be changed according to the form of the internal electrodes 121 and 122 or other purposes.

[0127] The external electrodes 131 and 132 are positioned on the main body 110 and can be connected to the internal electrodes 121 and 122.

[0128] More specifically, the external electrodes 131 and 132 may include a first external electrode 131 and a second external electrode 132, which are arranged on the third surface 3 and the fourth surface 4 of the main body 110, respectively, and connected to a first internal electrode 121 and a second internal electrode 122, respectively. That is, the first external electrode 131 may be arranged on the third surface 3 of the main body and connected to the first internal electrode 121, and the second external electrode 132 may be arranged on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0129] Furthermore, the external electrodes 131 and 132 may be arranged extending from a portion of the first surface 1 and the second surface 2 of the main body 110, or extending from a portion of the fifth surface 5 and the sixth surface 6 of the main body 110. That is, the first external electrode 131 may be arranged on the third surface 3 of the main body 110 and on a portion of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110, and the second external electrode 132 may be arranged on the fourth surface 4 of the main body 110 and on a portion of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110.

[0130] The external electrodes 131 and 132 may be formed from any material that has electrical conductivity, such as metal, and the specific material may be determined by considering electrical properties, structural stability, etc., and may include an electrode layer. Furthermore, the electrode layer may have a multilayer structure.

[0131] For example, the external electrodes 131 and 132 may include first electrode layers 131a and 131b placed on the main body 110, and second electrode layers 131b and 132b placed on the first electrode layers 131a and 132a. Furthermore, they may include a third electrode layer placed between the first electrode layers 131a and 132a and the second electrode layers 131b and 132b.

[0132] Here, it is preferable that the first to third electrode layers are layers that are distinct from each other. However, this is not limited to this, and they may be separated according to the order of the manufacturing process, and at least some of the first to third electrode layers may be observed as a single layer without being distinguished from each other.

[0133] In this invention, "distinguished" can mean, but is not limited to, two layers being distinguishable by physical differences, chemical differences, and / or simple optical differences, however, the distinction between layers can be made by the presence or absence of an "interface." An interface can mean a surface in which two layers in contact with each other are distinguishable from one another, for example, a state in which they can be distinguished by differences in components determined by EDS analysis using equipment such as a scanning electron microscope (SEM).

[0134] The first electrode layers 131a, 132a and / or the third electrode layer may be formed by transferring a sheet containing a conductive metal onto the main body 110, or by applying a conductive paste for external electrodes containing a conductive metal to the main body 110 and then firing it, or by a dipping method in which the main body 110 is immersed in a conductive paste for external electrodes containing a conductive metal, but is not limited thereto.

[0135] More specifically, the first electrode layers 131a and 132a are arranged in direct contact with the main body 110 and may include a first conductive metal and glass, while the third electrode layer is arranged on the first electrode layers 131a and 132a and may include a second conductive metal and resin.

[0136] As the conductive metal contained in the first electrode layers 131a, 132a and the third electrode layer, a material with excellent electrical conductivity can be used. For example, the conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but is not particularly limited thereto.

[0137] Here, the conductive metal contained in the first electrode layers 131a and 132a can be called the first conductive metal, and the conductive metal contained in the third electrode layer can be called the second conductive metal. In this case, the first conductive metal and the second conductive metal may be the same or different from each other, and if multiple conductive metals are included, only some of them may be the same conductive metal, but this is not particularly limited.

[0138] The glass contained in the first electrode layers 131a and 132a can serve to improve adhesion to the main body 110, and is not particularly limited as long as it can improve adhesion to the main body 110. The resin contained in the third electrode layer can serve to improve bending strength, and is not particularly limited as long as it can be mixed with the second conductive metal to form a paste, and may include, for example, an epoxy resin.

[0139] The first conductive metal contained in the first electrode layers 131a and 132a can serve to electrically connect with the internal electrodes 121 and 122.

[0140] The first conductive metal contained in the first electrode layers 131a and 132a is not particularly limited as long as it is a material that can be electrically connected to the internal electrodes 121 and 122, and may include, for example, at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0141] The second conductive metal contained in the third electrode layer can serve to electrically connect with the first electrode layers 131a and 132a.

[0142] The second conductive metal included in the third electrode layer is not particularly limited as long as it is a material that can be electrically connected to the first electrode layers 131a and 132a, and may include at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0143] The second conductive metal contained in the third electrode layer may include at least one of spherical particles and flake-shaped particles. That is, the second conductive metal may consist only of flake-shaped particles, or only of spherical particles, or it may be in a form in which flake-shaped particles and spherical particles are mixed.

[0144] Here, spherical particles may include forms that are not perfectly spherical, for example, forms with a dimensional ratio (major axis / minor axis) of 1.45 or less. Flake-like particles mean particles that are flat and elongated, and are not particularly limited, but for example, they may have a dimensional ratio (major axis / minor axis) of 1.95 or more. The dimensions of the spherical particles and flake-like particles in the major axis and minor axis directions can be measured from images obtained by scanning a cross-section (length and thickness) of a multilayer electronic component cut in the center of the width direction with a scanning electron microscope (SEM).

[0145] Furthermore, the third electrode layer may contain an intermetallic compound.

[0146] The inclusion of an intermetallic compound can further improve the electrical connectivity with the first electrode layers 131a and 132a. The intermetallic compound plays a role in improving electrical connectivity by linking multiple second conductive metal particles, and can also play a role in surrounding and connecting multiple second conductive metal particles to one another.

[0147] In this case, the intermetallic compound may include a metal having a melting point lower than the curing temperature of the resin. That is, because the intermetallic compound includes a metal having a melting point lower than the curing temperature of the resin, the metal having a melting point lower than the curing temperature of the resin melts during the drying and curing process, and forms an intermetallic compound with some of the metal particles, surrounding the metal particles. In this case, the intermetallic compound may preferably include a low-melting-point metal of 300°C or less. More specifically, for example, it may include tin (Sn) having a melting point of 213-220°C. During the drying and curing process, the tin (Sn) melts, and the molten tin (Sn) wets high-melting-point metal particles such as silver (Ag), nickel (Ni), or copper (Cu) by capillary action, and reacts with some of the silver (Ag), nickel (Ni), or copper (Cu) metal particles to form intermetallic compounds such as Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn. Silver (Ag), nickel (Ni), or copper (Cu) that are not involved in the reaction may remain in the form of metal particles.

[0148] Therefore, the multiple second conductive metal particles may include at least one of silver (Ag), nickel (Ni), and copper (Cu), and the intermetallic compound may include one or more of Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn.

[0149] The second electrode layers 131b and 132b can serve to improve mounting characteristics and may be, but are not limited to, a plated layer formed by a plating method on the first electrode layers 131a and 132a or the third electrode layer.

[0150] The types of the second electrode layers 131b and 132b are not particularly limited and may include, for example, at least one of nickel (Ni), tin (Sn), silver (Ag), palladium (Pd), and alloys thereof.

[0151] The second electrode layers 131b and 132b may be a single layer or multiple layers.

[0152] More specifically, for example, the second electrode layers 131b and 132b may be nickel (Ni) electrode layers or tin (Sn) electrode layers, and may be configured such that nickel (Ni) electrode layers and tin (Sn) electrode layers are formed sequentially on the first electrode layers 131a, 132a or the third electrode layer, or may be configured such that tin (Sn) electrode layers, nickel (Ni) electrode layers and tin (Sn) electrode layers are formed sequentially. Furthermore, the second electrode layers 131b and 132b may include multiple nickel (Ni) electrode layers and / or multiple tin (Sn) electrode layers.

[0153] There is no particular limit to the size of the stacked electronic component 100.

[0154] However, in order to achieve both miniaturization and high capacity simultaneously, the effects of the present invention may become more pronounced in stacked electronic components 100 of size 3216 (length × width: 3.2 mm × 1.6 mm, with length and width satisfying an error of ±10%) or smaller. Furthermore, the width of the stacked electronic component 100 may be greater than its length.

[0155] Although embodiments of the present invention have been described in detail above, the present invention is not limited by the embodiments described above and the accompanying drawings, but is limited by the claims provided herein. Therefore, within the scope of the technical idea of ​​the present invention as described in the claims, various forms of substitution, modification, and alteration are possible by persons with ordinary skill in the art, and these also fall within the scope of the present invention.

[0156] Furthermore, the term "embodiment" as used in this invention does not mean that each "embodiment" is the same as another, but is provided to highlight and describe the unique and distinct features of each. However, the above-presented embodiments do not preclude their realization in combination with features of another embodiment. For example, even if a matter described in one particular embodiment is not described in another embodiment, it can be understood as a description related to the other embodiment, unless there is a description in the other embodiment that contradicts or is contrary to that matter.

[0157] The terms used in this invention are used solely to describe one embodiment and are not intended to limit the invention. In this context, singular expressions may include plural expressions unless the context clearly indicates otherwise. [Explanation of Symbols]

[0158] 100: Stacked Electronic Components 110: Main unit 111: Dielectric layer 112, 113: Cover section 114, 115: Side margin section 121, 122: Internal electrode 131, 132: External electrode 141, 142:Protrusion

Claims

1. A body including a dielectric layer and internal electrodes arranged alternately with the dielectric layer in a first direction, having a first and second surface facing each other in the first direction, a third and fourth surface connected to the first and second surfaces and facing each other in a second direction, and a fifth and sixth surface connected to the first, second, third and fourth surfaces and facing each other in a third direction, The body includes an external electrode disposed on the main body, The dielectric layer includes a plurality of hemispherical first protrusions that project from only one of the first and second surfaces and include a first opening, and at least a portion of the plurality of first protrusions are arranged to be spaced apart from each other in the second direction. A multilayer electronic component in which, when the radius of the first opening is R1 and the distance between adjacent first protrusions in the second direction is G1, R1 and G1 satisfy 0.3 μm ≤ R1 ≤ 3.0 μm and 0.5 × R1 ≤ G1 ≤ 3.0 × R1.

2. The stacked electronic component according to claim 1, wherein the first protrusion protrudes toward the first surface.

3. The stacked electronic component according to claim 1, wherein the plurality of first protrusions are embossing patterns.

4. The stacked electronic component according to claim 1, wherein the height of the first protrusion is H1, and 0.3 μm ≤ H1.

5. When a plane containing the second and third directions is used as the reference plane, and a direction different from the second and third directions is defined as the fourth direction, The plurality of first protrusions are arranged to be spaced apart in the second, third, and fourth directions, according to any one of claims 1 to 4.

6. When the distance between adjacent first protrusions in the third direction is G2, The stacked electronic component according to claim 5, wherein R1 and G2 satisfy 0.5 × R1 ≤ G2 ≤ ​​3.0 × R1.

7. A body including a dielectric layer and internal electrodes arranged alternately with the dielectric layer in a first direction, having a first and second surface facing each other in the first direction, a third and fourth surface connected to the first and second surfaces and facing each other in a second direction, and a fifth and sixth surface connected to the first, second, third and fourth surfaces and facing each other in a third direction, The body includes an external electrode disposed on the main body, The internal electrode includes a plurality of hemispherical second protrusions that protrude from only one of the first and second surfaces and include a second opening, and at least a portion of the plurality of second protrusions are arranged to be spaced apart from each other in the second direction. A multilayer electronic component in which, when the radius of the second opening is R2 and the distance between adjacent second protrusions in the second direction is G3, R2 and G3 satisfy 0.3 μm ≤ R2 ≤ 3.0 μm and 0.5 × R2 ≤ G3 ≤ 3.0 × R2.

8. The stacked electronic component according to claim 7, wherein the second protrusion protrudes toward the first surface.

9. The stacked electronic component according to claim 7, wherein the plurality of second protrusions are an embossing pattern.

10. The stacked electronic component according to claim 7, wherein the height of the second protrusion is H2, and 0.3 μm ≤ H2 is satisfied.

11. When a plane containing the second and third directions is used as the reference plane, and a direction different from the second and third directions is defined as the fourth direction, The plurality of second protrusions are arranged to be spaced apart in the second, third, and fourth directions, according to any one of claims 7 to 10.

12. When the distance between adjacent second protrusions in the third direction is G4, The stacked electronic component according to claim 11, wherein R2 and G4 satisfy 0.5 × R2 ≤ G4 ≤ 3.0 × R2.

Images