Indication device

Abstract

To provide a display device with high display quality. [Solution] A display device comprising a first light-emitting device, a second light-emitting device, a first insulating layer, and a packed layer. The first light-emitting device comprises a first electrode, a first semiconductor layer on the first electrode, and a common electrode on the first semiconductor layer. The second light-emitting device comprises a second electrode, a second semiconductor layer on the second electrode, and a common electrode on the second semiconductor layer. The first insulating layer has a region in contact with the side surface of the first semiconductor layer and the side surface of the second semiconductor layer. The packed layer has a region that overlaps with the side surface of the first semiconductor layer and the side surface of the second semiconductor layer via the first insulating layer. The common electrode has a region in contact with the upper surface of the packed layer.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device, a display module, and electronic equipment. Another aspect of the present invention relates to a method for manufacturing a display device.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors), input / output devices (e.g., touch panels), methods for driving them, or methods for manufacturing them. [Background technology]

[0003] In recent years, there has been a growing demand for display devices applicable to virtual reality (VR), augmented reality (AR), substitutional reality (SR), or mixed reality (MR).

[0004] VR, AR, SR, and MR are collectively referred to as xR (Extended Reality). Display devices for xR are desired to have high resolution and high color reproduction in order to enhance the sense of reality and immersion. Examples of display elements (also called display devices) that can be applied to such display devices include liquid crystal devices, organic EL (Electro Luminescence) devices, and light-emitting diode (LED) devices.

[0005] Patent Document 1 discloses a display device using micro-LEDs. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] International Publication No. 2019 / 220267 [Overview of the project] [Problems that the invention aims to solve]

[0007] One aspect of the present invention aims to provide a display device with high display quality. One aspect of the present invention aims to provide a display device with high detail. One aspect of the present invention aims to provide a display device with high resolution. One aspect of the present invention aims to provide a display device with high brightness. One aspect of the present invention aims to provide a display device with high contrast. One aspect of the present invention aims to provide a highly reliable display device. One aspect of the present invention aims to provide a novel display device.

[0008] One aspect of the present invention aims to provide a method for manufacturing a display device with high display quality. One aspect of the present invention aims to provide a method for manufacturing a display device with high resolution. One aspect of the present invention aims to provide a method for manufacturing a display device with high brightness. One aspect of the present invention aims to provide a method for manufacturing a display device with high contrast. One aspect of the present invention aims to provide a method for manufacturing a highly reliable display device. One aspect of the present invention aims to provide a method for manufacturing a novel display device.

[0009] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention does not necessarily have to solve all of these problems. It is possible to extract other problems from the description in the specification, drawings, and claims. [Means for solving the problem]

[0010] One aspect of the present invention is a display device comprising a first light-emitting device, a second light-emitting device, a first insulating layer, and a packed layer. The first light-emitting device comprises a first electrode, a first semiconductor layer on the first electrode, and a common electrode on the first semiconductor layer. The second light-emitting device comprises a second electrode, a second semiconductor layer on the second electrode, and a common electrode on the second semiconductor layer. The first insulating layer has a region in contact with the side surface of the first semiconductor layer and the side surface of the second semiconductor layer. The packed layer has a region that overlaps with the side surface of the first semiconductor layer and the side surface of the second semiconductor layer via the first insulating layer. The common electrode has a region in contact with the upper surface of the packed layer.

[0011] The aforementioned display device has a colored layer and a color conversion layer, wherein the colored layer has a region that overlaps with the first light-emitting device via the color conversion layer, and the color conversion layer is a phosphor or quantum dot.

[0012] In the aforementioned display device, the ends of the packed layer are located on the first semiconductor layer and the second semiconductor layer, and the ends of the packed layer have a tapered shape in cross-sectional view.

[0013] In the aforementioned display device, the ends of the first insulating layer are located on the first semiconductor layer and the second semiconductor layer, and the ends of the first insulating layer have a tapered shape in cross-sectional view.

[0014] In the aforementioned display device, the end of the filling layer is located outside the end of the first insulating layer.

[0015] In the aforementioned display device, the packed layer is a display device having a convex curved shape on its upper surface in cross-sectional view.

[0016] The aforementioned display device has a reflective layer, the reflective layer is located between the first insulating layer and the filling layer, and the reflective layer has a region that overlaps with the sides of the first semiconductor layer and the second semiconductor layer via the first insulating layer.

[0017] In the aforementioned display device, the display device includes a second insulating layer, the second insulating layer has a region in contact with an upper surface of the first semiconductor layer, and the filling layer has a region overlapping the upper surface of the first semiconductor layer with the second insulating layer interposed therebetween.

[0018] In the aforementioned display device, the display device is characterized in that, in a cross-sectional view, an end portion of the second insulating layer has a tapered shape.

[0019] In the aforementioned display device, the first insulating layer comprises an inorganic material, and the filling layer comprises an organic material.

[0020] In the aforementioned display device, the filling layer is insulating.

[0021] In the aforementioned display device, the filling layer is conductive.

[0022] In the aforementioned display device, the first semiconductor layer and the second semiconductor layer are each a compound containing a Group 13 element and a Group 15 element.

[0023] In the aforementioned display device, the display device includes a layer. The layer includes a first transistor and a second transistor. A first light-emitting device and a second light-emitting device are provided on the layer. The first light-emitting device is electrically connected to the first transistor. The second light-emitting device is electrically connected to the second transistor.

[0024] One aspect of the present invention is a display module including the aforementioned display device and at least one of a connector and an integrated circuit.

[0025] One aspect of the present invention is an electronic device including the aforementioned display module and at least one of a housing, a battery, a camera, a speaker, and a microphone. Effects of the Invention

[0026] According to one aspect of the present invention, a display device with high display quality can be provided. According to one aspect of the present invention, a display device with high definition can be provided. According to one aspect of the present invention, a display device with high resolution can be provided. According to one aspect of the present invention, a display device with high brightness can be provided. According to one aspect of the present invention, a display device with high contrast can be provided. According to one aspect of the present invention, a highly reliable display device can be provided. According to one aspect of the present invention, a novel display device can be provided.

[0027] According to one aspect of the present invention, a method for manufacturing a display device with high display quality can be provided. According to one aspect of the present invention, a method for manufacturing a display device with high resolution can be provided. According to one aspect of the present invention, a method for manufacturing a display device with high brightness can be provided. According to one aspect of the present invention, a method for manufacturing a display device with high contrast can be provided. According to one aspect of the present invention, a method for manufacturing a display device with high reliability can be provided. According to one aspect of the present invention, a method for manufacturing a novel display device can be provided.

[0028] Furthermore, the description of these effects does not preclude the existence of other effects. One aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from the description, drawings, and claims. [Brief explanation of the drawing]

[0029] [Figure 1] Figure 1A is a top view showing an example of a display device. Figure 1B is a cross-sectional view showing an example of a display device. [Figure 2] Figures 2A and 2B are cross-sectional views showing an example of a display device. [Figure 3] Figures 3A and 3B are cross-sectional views showing an example of a display device. [Figure 4] Figures 4A and 4B are cross-sectional views showing an example of a display device. [Figure 5] Figures 5A and 5B are cross-sectional views showing an example of a display device. [Figure 6]Figures 6A and 6B are cross-sectional views showing an example of a display device. [Figure 7] Figures 7A and 7B are cross-sectional views showing an example of a display device. [Figure 8] Figure 8 is a cross-sectional view showing an example of a display device. [Figure 9] Figures 9A and 9B are cross-sectional views showing an example of a display device. [Figure 10] Figure 10 is a cross-sectional view showing an example of a display device. [Figure 11] Figures 11A and 11B are cross-sectional views showing an example of a display device. [Figure 12] Figures 12A and 12B are perspective views showing an example of a method for manufacturing a display device. [Figure 13] Figures 13A and 13B are cross-sectional views showing an example of a display device. [Figure 14] Figures 14A and 14B are cross-sectional views showing an example of a display device. [Figure 15] Figures 15A and 15B are cross-sectional views showing an example of a display device. [Figure 16] Figure 16A is a top view showing an example of a display device. Figure 16B is a cross-sectional view showing an example of a display device. [Figure 17] Figures 17A to 17D are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 18] Figures 18A to 18C are perspective views showing an example of a method for manufacturing a display device. [Figure 19] Figures 19A and 19B are perspective views showing an example of a method for manufacturing a display device. [Figure 20] Figures 20A to 20D are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 21] Figures 21A to 21D are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 22] Figures 22A to 22D are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 23] Figures 23A to 23C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 24] Figures 24A and 24B are cross-sectional views showing an example of a display device. [Figure 25] Figures 25A and 25B are cross-sectional views showing an example of a display device. [Figure 26] Figures 26A to 26D are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 27] Figures 27A to 27C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 28] Figures 28A to 28D are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 29] Figures 29A to 29C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 30] Figures 30A and 30B are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 31] Figures 31A to 31G show examples of pixels. [Figure 32] Figures 32A to 32K show examples of pixels. [Figure 33] Figures 33A and 33B are perspective views showing an example of a display device. [Figure 34] Figure 34 is a cross-sectional view showing an example of a display device. [Figure 35] Figure 35 is a cross-sectional view showing an example of a display device. [Figure 36] Figure 36 is a cross-sectional view showing an example of a display device. [Figure 37] Figure 37 is a cross-sectional view showing an example of a display device. [Figure 38] Figure 38 is a cross-sectional view showing an example of a display device. [Figure 39] Figure 39 is a cross-sectional view showing an example of a display device. [Figure 40] Figure 40 is a perspective view showing an example of a display device. [Figure 41] Figure 41A is a cross-sectional view showing an example of a display device. Figures 41B and 41C are cross-sectional views showing an example of a transistor. [Figure 42] Figure 42 is a cross-sectional view showing an example of a display device. [Figure 43] Figure 43 is a cross-sectional view showing an example of a display device. [Figure 44] Figures 44A to 44D show examples of electronic devices. [Figure 45] Figures 45A to 45F show examples of electronic devices. [Figure 46] Figures 46A to 46G show examples of electronic devices. [Modes for carrying out the invention]

[0030] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention shall not be construed as being limited to the descriptions of the embodiments shown below.

[0031] In the invention described below, the same reference numerals are used in common across different drawings for identical parts or parts having similar functions, and repeated explanations are omitted. Furthermore, when referring to similar functions, the same hatching pattern may be used, and reference numerals may not be assigned.

[0032] The position, size, and scope of each component shown in the drawings may not represent the actual position, size, and scope for the sake of ease of understanding. Therefore, the disclosed invention is not necessarily limited to the position, size, and scope disclosed in the drawings.

[0033] The words "film" and "layer" can be interchanged depending on the context or situation. For example, the term "conductive layer" can be changed to "conductive film." Or, for example, the term "insulating film" can be changed to "insulating layer."

[0034] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 1 to 23.

[0035] One aspect of the present invention is a display device having a first light-emitting device, a second light-emitting device, a first insulating layer, and a filling layer. The first and second light-emitting devices can be light-emitting diodes (LEDs). It is preferable to use an inorganic material for the light-emitting material of the light-emitting diode. The first light-emitting device has a first electrode, a common electrode, and an island-shaped first semiconductor layer sandwiched between the first electrode and the common electrode. The second light-emitting device has a second electrode, a common electrode, and an island-shaped second semiconductor layer sandwiched between the second electrode and the common electrode.

[0036] In this specification, the term "island-like" refers to a state in which two or more layers made of the same material and formed in the same process are physically separated. For example, an island-like semiconductor layer refers to a state in which the semiconductor layer and the adjacent semiconductor layer are physically separated.

[0037] The first insulating layer has regions that are in contact with the side surfaces of the first semiconductor layer and the side surfaces of the second semiconductor layer. By providing the first insulating layer, the diffusion of impurities into the first and second semiconductor layers can be suppressed, resulting in a highly reliable display device.

[0038] A filling layer is provided on the first insulating layer. A common electrode is provided on the filling layer. By providing the filling layer, the step difference between the first light-emitting device and the second light-emitting device can be reduced, and the coverage of the common electrode can be improved. The filling layer has the function of filling and flattening the space between the first light-emitting device and the second light-emitting device (also called LFP (Local Filling Planarization)).

[0039] A display device according to one aspect of the present invention can form the semiconductor layer and electrodes of a light-emitting device using photolithography. When the display device is fabricated on a glass substrate, the spacing between adjacent light-emitting devices can be narrowed to, for example, less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, 1.5 μm or less, 1 μm or less, or 0.5 μm or less. When the display device is fabricated on a single-crystal substrate, by using an exposure apparatus for LSIs, the spacing between adjacent light-emitting devices can be narrowed to, for example, 500 nm or less, 200 nm or less, 100 nm or less, and even 50 nm or less. This significantly reduces the area of ​​the non-light-emitting region that may exist between two light-emitting devices, making it possible to bring the aperture ratio closer to 100%. For example, in a display device according to one aspect of the present invention, the aperture ratio can be 40% or more, 50% or more, 60% or more, 70% or more, 80% or more, and even 90% or more, while still being less than 100%. Furthermore, since the size of the semiconductor layer and electrodes in the light-emitting device can be made extremely small, it is possible to manufacture a display device that combines high resolution and a high aperture ratio. In addition, it is possible to realize a small and lightweight display device.

[0040] Specifically, the resolution of the display device according to one embodiment of the present invention is, for example, 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and can be 20000 ppi or less, or 30000 ppi or less.

[0041] This embodiment describes the configuration and manufacturing method of a display device according to one aspect of the present invention.

[0042] <Configuration Example 1-1> Figure 1A shows a top view of a display device 100, which is one embodiment of the present invention. The display device 100 has a display unit in which a plurality of pixels 110 are arranged in a matrix, and a connection unit 140 outside the display unit. Each pixel 110 has a plurality of subpixels. Figure 1A shows a 2x2 arrangement of pixels 110. Furthermore, assuming that each pixel 110 has three subpixels (subpixel 110a, subpixel 110b, and subpixel 110c), it shows a 2x6 arrangement of subpixels. The connection unit 140 can also be called a cathode contact unit.

[0043] Each sub-pixel has a light-emitting device. Light-emitting diodes (LEDs) can be used as the light-emitting devices. It is preferable to use inorganic materials for the light-emitting material of the light-emitting diode. By using inorganic materials for the light-emitting material, the lifespan of the display device can be extended and the reliability can be increased. Furthermore, since light-emitting diodes are self-emissive devices, when light-emitting diodes are used as display devices, a backlight is not required for the display device, and a polarizing plate is not necessary. Therefore, the power consumption of the display device can be reduced, and a thin and lightweight display device can be realized. In addition, a display device using light-emitting diodes has high brightness (for example, 5000 cd / m²). 2 Preferably, the above is 10,000 cd / m². 2 As described above, high contrast and a wide viewing angle can be obtained, resulting in high display quality.

[0044] The top surface shape of the subpixel shown in Figure 1A corresponds to the top surface shape of the light-emitting region of the light-emitting device. The top surface shape of the subpixel can be, for example, a polygon such as a triangle, quadrilateral (including rectangles and squares), pentagon, a polygon with rounded corners, an ellipse, or a circle.

[0045] Each sub-pixel has a pixel circuit that has the function of controlling the light-emitting device. The pixel circuit is not limited to the sub-pixel range shown in Figure 1A, but may be located outside of it. For example, the transistor in the pixel circuit of sub-pixel 110a may be located within the range of sub-pixel 110b shown in Figure 1A, or some or all of it may be located outside the range of sub-pixel 110a.

[0046] In Figure 1A, the aperture ratios (size, also known as the size of the light-emitting area) of sub-pixels 110a, 110b, and 110c are shown to be equal or approximately equal, but one aspect of the present invention is not limited thereto. The aperture ratios of sub-pixels 110a, 110b, and 110c can each be determined as appropriate. The aperture ratios of sub-pixels 110a, 110b, and 110c may be different, or two or more may be equal or approximately equal.

[0047] A stripe array is applied to the pixel 110 shown in Figure 1A. The pixel 110 shown in Figure 1A is composed of three subpixels: subpixel 110a, subpixel 110b, and subpixel 110c. Each of the subpixels 110a, subpixel 110b, and subpixel 110c has a light-emitting device with a different emission color. Examples of subpixels 110a, subpixel 110b, and subpixel 110c include subpixels with three colors: red (R), green (G), and blue (B); and subpixels with three colors: yellow (Y), cyan (C), and magenta (M). Furthermore, the types of subpixel colors are not limited to three, but may be four or more. Examples of four-color subpixels include subpixels with four colors: R, G, B, and white (W); subpixels with four colors: R, G, B, and Y; and subpixels with four colors: R, G, B, and infrared (IR).

[0048] In this specification, the row direction is sometimes referred to as the X direction, and the column direction as the Y direction. The X and Y directions intersect, for example, perpendicularly (see Figure 1A). Figure 1A shows an example where subpixels of different colors are arranged in the X direction, and subpixels of the same color are arranged in the Y direction.

[0049] Figure 1B shows cross-sectional views between the dashed-dotted lines X1-X2 and Y1-Y2 in Figure 1A. Figures 2A and 2B show enlarged views of parts of the cross-sectional views shown in Figure 1B.

[0050] As shown in Figure 1B, the display device 100 has a light-emitting device 130 on a layer 101, and a protective layer 131 covering the light-emitting device 130. A substrate 120 is bonded to the protective layer 131 by a resin layer 122.

[0051] The light-emitting device 130 has a conductive layer 132, an LED layer 134 on the conductive layer 132, and a conductive layer 115 on the LED layer 134. The conductive layer 132 and the conductive layer 115 each function as electrodes of the light-emitting device 130. The LED layer 134, sandwiched between the pair of electrodes (conductive layer 132 and conductive layer 115), has at least a light-emitting layer. The light-emitting device 130 shown in Figure 1B can be described as a so-called vertical structure light-emitting diode, having the conductive layer 132 on one side of the LED layer 134 and the conductive layer 115 on the opposite side.

[0052] Next, the configuration of the light-emitting device 130 will be explained using Figure 2A. Figure 2A is an enlarged cross-sectional view of the region including two adjacent light-emitting devices 130 and their surroundings.

[0053] The light-emitting device 130 has a conductive layer 132, a conductive layer 115, and an LED layer 134 sandwiched between the conductive layers 132 and 115. The LED layer 134 has a laminated structure in which a semiconductor layer 186, a light-emitting layer 184, and a semiconductor layer 182 are stacked in this order. Note that the LED layer 134 may also have layers other than the semiconductor layer 186, the light-emitting layer 184, and the semiconductor layer 182.

[0054] The light-emitting layer 184 is sandwiched between semiconductor layers 186 and 182. Light is emitted in the light-emitting layer 184 through the bonding of electrons and holes. One of the semiconductor layers 186 and 182 can be an n-type semiconductor layer, while the other can be a p-type semiconductor layer. The light-emitting layer 184 can be an n-type, i-type, or p-type semiconductor layer. Semiconductor layers 186, 184, and 182 can all be semiconductor layers. Therefore, the LED layer can be described as a semiconductor layer.

[0055] The LED layer 134 is formed to emit light such as red light, yellow light, green light, blue light, or ultraviolet light. The structure of the LED layer 134 is not particularly limited and may be a homostructure, heterostructure, or double heterostructure having a pn junction or pin junction, or it may be an MIS (Metal Insulator Semiconductor) junction. The LED layer 134 may be a superlattice structure, a single quantum well structure, or a multi-quantum well (MQW) structure. Furthermore, the LED layer 134 may use nanocolumns.

[0056] The LED layer 134 can be, for example, a compound containing group 13 and group 15 elements. Examples of group 13 elements include aluminum, gallium, and indium. Examples of group 15 elements include nitrogen, phosphorus, arsenic, and antimony. The LED layer 134 can be, for example, a gallium-phosphorus compound, a gallium-arsenide compound, a gallium-aluminum-arsenide compound, an aluminum-gallium-indium-phosphorus compound, gallium nitride (GaN), an indium-gallium nitride compound, or a selenium-zinc compound.

[0057] For example, gallium nitride can be used for the LED layer 134 that emits light in the ultraviolet to blue wavelength range. An indium gallium nitride compound can be used for the LED layer 134 that emits light in the ultraviolet to green wavelength range. An aluminum gallium indium phosphorus compound or a gallium arsenide compound can be used for the LED layer 134 that emits light in the green to red wavelength range. A gallium arsenide compound can be used for the LED layer 134 that emits light in the infrared wavelength range.

[0058] The layer 101 preferably includes a pixel circuit that has the function of controlling the light-emitting device 130. The pixel circuit can have, for example, a configuration having a transistor, a capacitive element, and wiring. Figure 1B shows a transistor 105 as a transistor constituting the pixel circuit.

[0059] Layer 101 can have a configuration in which pixel circuits are provided on a semiconductor substrate or an insulating substrate. As the semiconductor substrate, a single-crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate can be used. As the insulating substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or an organic resin substrate can be used. The shape of the semiconductor substrate and the insulating substrate may be circular or rectangular. The semiconductor substrate and the insulating substrate can be substrates that have at least enough heat resistance to withstand subsequent heat treatment.

[0060] Layer 101 can, for example, be a laminated structure consisting of a substrate on which multiple transistors are provided and an insulating layer covering these transistors. The insulating layer on the transistors may be a single layer or a laminated structure.

[0061] Furthermore, in addition to the pixel circuit, layer 101 may have one or both of a gate line drive circuit (gate driver) and a source line drive circuit (source driver). It may also have one or both of an arithmetic circuit and a memory circuit.

[0062] A conductive layer 111 is provided on layer 101. The conductive layer 111 is electrically connected to the transistor 105 and functions as a pixel electrode. A connecting layer 144 is provided on the conductive layer 111, and a light-emitting device 130 is provided on the connecting layer 144. The connecting layer 144 can be made of a conductive material. Examples of conductive materials include metals such as gold, silver, and tin, alloys having these metals, conductive films, or conductive pastes. Gold is preferably used for the connecting layer 144. The connecting layer 144 can be formed by printing, transfer, or ejection. The conductive layer 132 of the light-emitting device 130 is electrically connected to the conductive layer 111 via the connecting layer 144. The conductive layer 132, the connecting layer 144, and the conductive layer 111 can be said to function together as a pixel electrode. Alternatively, the connecting layer 144 may be omitted, and the conductive layer 111 and the conductive layer 132 may be directly in contact and electrically connected.

[0063] Figure 1B shows an example where the edges of the LED layer 134, conductive layer 132, connecting layer 144, and conductive layer 111 are aligned or roughly aligned, that is, the upper surface shapes of the LED layer 134, conductive layer 132, connecting layer 144, and conductive layer 111 are the same or roughly aligned. For example, the LED layer 134, conductive layer 132, connecting layer 144, and conductive layer 111 can be formed using the same mask. At least, it is preferable that the edges of the LED layer 134 and conductive layer 132 are aligned or roughly aligned. With such a configuration, the entire area where the conductive layer 132 is provided can be used as the light-emitting area of ​​the light-emitting device 130, and the aperture ratio of the pixels can be increased. Note that some edges of the LED layer 134, conductive layer 132, connecting layer 144, and conductive layer 111 do not need to be aligned.

[0064] Furthermore, if the edges are aligned or roughly aligned, and the top surface shapes match or roughly match, then in a top view, at least a portion of the contours overlaps between the stacked layers. This includes, for example, cases where the upper and lower layers are processed with the same mask pattern, or partially with the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or the upper layer may be located outside the lower layer; in this case as well, the edges are said to be roughly aligned, or the top surface shapes roughly match.

[0065] The conductive layer 115 provided on the LED layer 134 is provided in common to multiple light-emitting devices 130 and functions as a common electrode.

[0066] The conductive layer 115 is electrically connected to the conductive layer 123 provided at the connection portion 140. The conductive layer 123 can be made of the same material as the conductive layer 111. Furthermore, the conductive layer 123 can be formed using the same process as the conductive layer 111.

[0067] Figure 1A shows an example where the connecting portion 140 is located below the display portion in a top view, but the position of the connecting portion is not particularly limited. The connecting portion 140 only needs to be provided at least one location on the top, right, left, or bottom of the display portion in a top view, and may be provided so as to surround all four sides of the display portion. The top shape of the connecting portion 140 is also not particularly limited and can be strip-shaped, L-shaped, U-shaped, or frame-shaped. Furthermore, there may be one or more connecting portions 140.

[0068] As shown in Figures 1B and 2A, an insulating layer 125 and a filling layer 127 on the insulating layer 125 are provided between adjacent light-emitting devices 130. The insulating layer 125 is provided in contact with the sides of the LED layer 134, the conductive layer 132, the connecting layer 144, and the conductive layer 111, as well as the upper surface of layer 101. Furthermore, it is preferable that the insulating layer 125 has a region in contact with a part of the upper surface of the LED layer 134. The filling layer 127 is provided on the insulating layer 125 so as to fill any recesses formed in the insulating layer 125. It is preferable that the filling layer 127 covers at least a portion of the sides of the insulating layer 125. The filling layer 127 can be configured to have a region that overlaps with the sides of the LED layer 134 via the insulating layer 125. A conductive layer 115 is provided on the filling layer 127.

[0069] By providing the insulating layer 125 and the filling layer 127, the step difference between the region where the light-emitting device 130 is provided and the region where the light-emitting device 130 is not provided can be reduced. Therefore, the unevenness of the surface on which the conductive layer 115, which functions as a common electrode, is formed can be reduced, and the coverage of the conductive layer 115 can be improved. Consequently, connection failures due to step breaks in the conductive layer 115 can be suppressed. In addition, it is possible to suppress the local thinning of the conductive layer 115 due to the step difference and the resulting increase in electrical resistance.

[0070] In this specification, "step breakage" refers to the phenomenon in which a layer, film, or electrode is divided due to the shape of the surface on which it is formed (for example, a step).

[0071] The packed layer 127 preferably has a region where the height of its upper surface is higher than the height of the upper surface of the LED layer 134. The upper surface of the packed layer 127 preferably has a shape that is flatter, but it may have convex portions, convex curved surfaces, concave curved surfaces, or recesses. For example, the upper surface of the packed layer 127 preferably has a flat, smooth convex curved surface shape.

[0072] A portion of the top surface and sides of the LED layer 134 are covered by the insulating layer 125. The filling layer 127 has a region that overlaps with a portion of the top surface and sides of the LED layer 134 via the insulating layer 125. By covering a portion of the top surface and sides of the LED layer 134 with at least one of the insulating layer 125 and the filling layer 127, the inclusion of impurities can be suppressed. Therefore, degradation of the light-emitting device 130 can be suppressed, and the reliability of the light-emitting device 130 can be improved.

[0073] The conductive layer 132, the connecting layer 144, and the sides of the conductive layer 111 are covered by the insulating layer 125. The filling layer 127 has a region that overlaps with the sides of the conductive layer 132, the connecting layer 144, and the conductive layer 111 via the insulating layer 125. Because the sides of the conductive layer 132, the connecting layer 144, and the conductive layer 111 are covered by at least one of the insulating layer 125 and the filling layer 127, it is possible to suppress contact between the conductive layer 115 and one or more of the conductive layer 132, the connecting layer 144, and the conductive layer 111. Therefore, short circuits of the light-emitting device 130 can be suppressed, and the reliability of the light-emitting device 130 can be improved.

[0074] The insulating layer 125 is preferably in contact with the side surface of the LED layer 134. By configuring the insulating layer 125 to be in contact with the LED layer 134, peeling of the LED layer 134 can be suppressed. The close contact between the insulating layer 125 and the LED layer 134 provides the effect of fixing or bonding adjacent LED layers 134 to each other. This can improve the reliability of the light-emitting device 130. It can also improve the manufacturing yield of the light-emitting device 130.

[0075] For example, even when using a material with low adhesion or low mechanical strength for the connecting layer 144, the connecting layer 144 is fixed by configuring the insulating layer 125 to be in contact with the side surface of the LED layer 134, the side surface of the conductive layer 132, the side surface of the conductive layer 111, and a part of the upper surface of layer 101. This suppresses peeling of the connecting layer 144 and increases its mechanical strength.

[0076] The insulating layer 125 and the filling layer 127 cover both a portion of the upper surface and the sides of the LED layer 134, thereby further suppressing delamination of the LED layer 134 and improving the reliability of the light-emitting device 130. Furthermore, the manufacturing yield of the light-emitting device 130 can be increased.

[0077] In Figure 1B, multiple cross-sections of the insulating layer 125 and the filling layer 127 are shown, but in a top view, the insulating layer 125 and the filling layer 127 are connected as one unit. In other words, the display device 100 can be configured to have, for example, one insulating layer 125 and one filling layer 127. The display device 100 may also have multiple insulating layers 125 that are separated from each other, or multiple filling layers 127 that are separated from each other.

[0078] Next, we will describe the materials that can be used for the insulating layer 125 and the filling layer 127.

[0079] The insulating layer 125 can be an insulating layer having an inorganic material. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used for the insulating layer 125. The insulating layer 125 may be a single layer or a laminated structure. Examples of oxide insulating films include silicon oxide film, aluminum oxide film, magnesium oxide film, indium gallium zinc oxide film, gallium oxide film, germanium oxide film, yttrium oxide film, zirconium oxide film, lanthanum oxide film, neodymium oxide film, hafnium oxide film, and tantalum oxide film. Examples of nitride insulating films include silicon nitride film and aluminum nitride film. Examples of oxidative nitride insulating films include silicon oxidative nitride film and aluminum oxidative nitride film. Examples of nitride oxide insulating films include silicon nitride oxide film and aluminum nitride oxide film. In particular, aluminum oxide is preferred because it has a high selectivity ratio with the LED layer 134 during etching and has the function of protecting the LED layer 134 during the formation of the packing layer 127. In particular, by applying an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by atomic layer deposition (ALD) to the insulating layer 125, it is possible to form an insulating layer 125 with fewer pinholes and excellent protection for the LED layer 134. Alternatively, the insulating layer 125 may have a laminated structure of a film formed by ALD and a film formed by sputtering. For example, the insulating layer 125 may have a laminated structure of an aluminum oxide film formed by ALD and a silicon nitride film formed by sputtering.

[0080] In this specification, the term "oxide-nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and the term "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content.

[0081] Preferably, the insulating layer 125 functions as a barrier insulating layer against at least one of water and oxygen. Furthermore, preferably, the insulating layer 125 has the function of suppressing the diffusion of at least one of water and oxygen. Also, preferably, the insulating layer 125 has the function of capturing or fixing (also known as gettering) at least one of water and oxygen.

[0082] In this specification, the term "barrier insulating layer" refers to an insulating layer that has barrier properties. Furthermore, in this specification, "barrier properties" refers to a function that suppresses the diffusion of the corresponding substance (also known as low permeability), or a function that captures or fixes the corresponding substance (also known as gettering).

[0083] The insulating layer 125 has the function of a barrier insulating layer or a gettering function, thereby suppressing the intrusion of impurities (typically at least one of water and oxygen) that could diffuse from the outside into each light-emitting device. This configuration makes it possible to provide a highly reliable light-emitting device, and furthermore, a highly reliable display device.

[0084] The insulating layer 125 preferably has a low impurity concentration. This prevents impurities from mixing from the insulating layer 125 into the LED layer 134 and degrading the LED layer 134. Furthermore, by lowering the impurity concentration in the insulating layer 125, the barrier properties against at least one of water and oxygen can be improved. For example, it is desirable that the insulating layer 125 has a sufficiently low hydrogen concentration and a sufficiently low carbon concentration, preferably both.

[0085] The filling layer 127 provided on the insulating layer 125 has the function of reducing the irregularities in the insulating layer 125 formed between adjacent light-emitting devices 130. In other words, the presence of the filling layer 127 has the effect of improving the flatness of the surface on which the conductive layer 115 is formed.

[0086] The packed layer 127 can preferably be an insulating layer having an organic material. The organic material is preferably a photosensitive resin, for example, a photosensitive acrylic resin. In this specification, the term "acrylic resin" does not refer only to polymethacrylate esters or methacrylic resins, but may refer to acrylic polymers in a broad sense.

[0087] As the packed layer 127, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins may be used. Alternatively, as the packed layer 127, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used. Furthermore, a photoresist may be used as the photosensitive resin. Either a positive-type or negative-type material may be used as the photosensitive resin.

[0088] It is preferable to use a material with low light transmittance for the packed layer 127, so that the packed layer 127 has light-shielding properties. The packed layer 127 may also be made of a material that absorbs visible light. By blocking the light emitted from the light-emitting device 130, the packed layer 127 can suppress light (stray light) that leaks from the light-emitting device 130 to other subpixels through the packed layer 127. This improves the display quality of the display device. Furthermore, since the display quality can be improved without using a polarizing plate in the display device, a lightweight and thin display device can be realized.

[0089] Examples of materials that absorb visible light include materials containing pigments such as black, materials containing dyes, light-absorbing resin materials (e.g., polyimide), and resin materials that can be used as color filters (color filter materials). It is preferable to use a resin material which is made by laminating or mixing two or more color filter materials, as this can enhance the visible light shielding effect. In particular, by mixing three or more color filter materials, it is possible to create a black or near-black resin layer.

[0090] The material used for the filling layer 127 preferably has a low volume shrinkage rate. This makes it easier to form the filling layer 127 in the desired shape. Furthermore, it is preferable that the filling layer 127 has a low volume shrinkage rate after curing. This makes it easier to maintain the shape of the filling layer 127 in various processes after its formation. Specifically, the volume shrinkage rate of the filling layer 127 after heat curing, after photocuring, or after both photocuring and heat curing is preferably 10% or less, more preferably 5% or less, and even more preferably 1% or less. Here, the volume shrinkage rate can be the value of either the volume shrinkage rate due to light irradiation or the volume shrinkage rate due to heating, or the sum of both.

[0091] Although insulating materials were used as an example of materials that can be applied to the packed layer 127, the conductivity of the packed layer 127 is not particularly limited. Semiconductor materials or conductive materials may be applied to the packed layer 127. For example, by applying a conductive material to the packed layer 127, the resistance of the display device to overcurrents generated by electrostatic discharge (ESD) can be increased. For example, the packed layer 127 can be made of a resin in which metal particles are dispersed.

[0092] When a conductive material is applied to the packing layer 127, it is preferable to provide an insulating layer 125 between the packing layer 127 and the conductive layer 132, the connecting layer 144, and the conductive layer 111. By covering the sides of the conductive layer 132, the connecting layer 144, and the conductive layer 111 with the insulating layer 125, it is possible to suppress contact between the conductive layer 115 and one or more of the conductive layer 132, the connecting layer 144, and the conductive layer 111 via the packing layer 127. Therefore, a short circuit of the light-emitting device 130 can be suppressed, and the reliability of the light-emitting device 130 can be improved.

[0093] Next, the structure of the packed layer 127 and its vicinity will be described using Figures 2A and 2B. Figure 2B is an enlarged cross-sectional view of the end of the packed layer 127 on the LED layer 134 shown in Figure 2A and its vicinity.

[0094] As shown in Figures 2A and 2B, it is preferable that the end of the filling layer 127 is located outside the end of the insulating layer 125. This reduces the unevenness of the surface on which the conductive layer 115 is formed (in this case, the filling layer 127 and the LED layer 134), thereby improving the coverage of the conductive layer 115. Furthermore, as shown in Figure 2B, it is preferable that the end of the filling layer 127 has a tapered shape in cross-sectional view.

[0095] In this specification, a tapered shape refers to a shape in which at least a portion of the side surface of a structure is inclined with respect to the substrate surface or the surface to be formed. For example, it is preferable to have a region in which the angle (also called the taper angle) between the inclined side surface and the substrate surface or the surface to be formed is less than 90°. The side surface of the structure, the substrate surface, and the surface to be formed do not necessarily have to be perfectly flat, and may be substantially planar with a small curvature, or substantially planar with fine irregularities.

[0096] The angle θ1 between the side surface of the packing layer 127 and the surface to be formed (in this case, the LED layer 134) is preferably less than 90°, more preferably 60° or less, more preferably 45° or less, and more preferably 20° or less. By tapering the edges of the packing layer 127, the conductive layer 115 provided on the packing layer 127 can be formed with high coverage, and step breaks or localized thinning of the film thickness can be suppressed. As a result, the in-plane uniformity of the film thickness and resistance of the conductive layer 115 can be improved, and the display quality of the display device can be improved.

[0097] As shown in Figure 2A, in cross-sectional view, it is preferable that the upper surface of the packing layer 127 has a convex curved shape. The convex curved shape of the upper surface of the packing layer 127 is preferably a shape that bulges gently towards the center. Furthermore, it is preferable that the convex curved portion at the center of the upper surface of the packing layer 127 is continuously connected to the tapered portion at the end. By making the packing layer 127 such a shape, the conductive layer 115 can be formed with high coverage over the entire packing layer 127.

[0098] As shown in Figure 2B, in cross-sectional view, the end of the insulating layer 125 is preferably tapered. The angle θ2 between the side surface of the insulating layer 125 and the surface to be formed (in this case, the LED layer 134) is preferably less than 90°, more preferably 60° or less, more preferably 45° or less, and more preferably 20° or less. By tapering the end of the insulating layer 125, the filling layer 127 provided on the insulating layer 125 can be formed with high coverage. By forming the filling layer 127 with high coverage, the conductive layer 115 provided on the filling layer 127 can be formed with even higher coverage.

[0099] Furthermore, as shown in Figures 3A and 3B, the edges of the packing layer 127 may be located inward from the edges of the insulating layer 125. Also, as shown in Figures 4A and 4B, the edges of the packing layer 127 may be aligned with, or approximately aligned with, the edges of the insulating layer 125.

[0100] As shown in Figure 5A, the insulating layer 125 and the filling layer 127 do not necessarily have areas in contact with the upper surface of the LED layer 134. Also, as shown in Figure 5B, the heights of the upper surfaces of the insulating layer 125, the filling layer 127, and the LED layer 134 may be the same or approximately the same. Alternatively, as shown in Figure 6A, the filling layer 127 may have an area where the height of its upper surface is lower than the height of the upper surface of the LED layer 134. Figure 6A shows an example in which the filling layer 127 has a recess on its upper surface.

[0101] As shown in Figure 6B, the insulating layer 125 and the filling layer 127 do not necessarily have to cover the entire side surface of the LED layer 134. However, it is preferable that the insulating layer 125 covers at least the entire side surface of the light-emitting layer 184.

[0102] The upper surface of the packing layer 127 preferably has a smooth shape. For example, as shown in Figure 7A, the upper surface of the packing layer 127 may have a concave curved shape in cross-sectional view. Figure 7A shows an example in which the upper surface of the packing layer 127 has a shape that bulges gently towards the center, i.e., a convex curved surface, and a shape that is concave in the center and its vicinity. Furthermore, the convex curved portion of the upper surface of the packing layer 127 is continuously connected to the tapered portion at the end. Even if the packing layer 127 has such a shape, the conductive layer 115 can be formed with high coverage over the entire packing layer 127. Note that the upper surface of the packing layer 127 is not limited to this, and for example, as shown in Figure 7B, the packing layer 127 may have a flat or substantially flat upper surface. If the packing layer 127 has a flat or substantially flat upper surface, for example, the bonding strength of the bonded surface can be increased when bonding with other substrates. In addition, bonding defects caused by unevenness can be suppressed, and productivity can be increased.

[0103] A display device 100 according to one aspect of the present invention may be a top-emission type that emits light in the opposite direction to the surface of the light-emitting device 130 (here, layer 101), a bottom-emission type that emits light toward the surface of the light-emitting device 130, or a dual-emission type that emits light on both sides. Figure 1B, etc., schematically shows the light emitted from the substrate 120 side with white arrows as an example of a top-emission type. When applying a top-emission type, it is preferable to use a material with high transmittance to visible light for the substrate 120. It is preferable to use a material that reflects light for one or both of the conductive layer 132 and the conductive layer 111, and a material that transmits light for the conductive layer 115.

[0104] Colored layers 107a, 107b, and 107c are provided between the surface from which light is emitted (in this case, the substrate 120) and the light-emitting device 130. Each of the colored layers 107a, 107b, and 107c functions as a color filter that transmits, for example, red light, green light, or blue light. The colored layers 107a, 107b, and 107c can be made of metal material, resin material, or resin material containing pigment or dye. Note that the colored layers 107a, 107b, and 107c may be collectively referred to as colored layer 107.

[0105] A color conversion layer 109 is provided between the colored layers 107a, 107b, and 107c and the light-emitting device 130. The color conversion layer 109 can be, for example, a resin layer mixed with a color conversion material. The color conversion material can be, for example, a phosphor or a quantum dot (QD). In particular, quantum dots (QDs) have a narrow peak width in their emission spectrum and can produce light emission with high color purity. This can improve the display quality of the display device. Both phosphors and quantum dots (QDs) may be used as the color conversion material.

[0106] There are no particular limitations on the materials that constitute quantum dots (QDs). Examples include Group 14 elements, Group 15 elements, Group 16 elements, compounds consisting of multiple Group 14 elements, compounds of elements belonging to Groups 4 through 14 and Group 16 elements, compounds of Group 2 elements and Group 16 elements, compounds of Group 13 elements and Group 15 elements, compounds of Group 13 elements and Group 17 elements, compounds of Group 14 elements and Group 15 elements, compounds of Group 11 elements and Group 17 elements, iron oxides, titanium oxides, chalcogenide spinels, and various semiconductor clusters.

[0107] Specifically, the materials used to construct quantum dots (QDs) include cadmium selenide, cadmium sulfide, cadmium telluride, zinc selenide, zinc oxide, zinc sulfide, zinc telluride, mercury sulfide, mercury selenide, mercury telluride, indium arsenide, indium phosphide, gallium arsenide, gallium phosphide, indium nitride, gallium nitride, indium antimonide, gallium antimonide, aluminum phosphide, aluminum arsenide, aluminum antimonide, lead selenide, lead telluride, and sulfide. Lead, indium selenide, indium telluride, indium sulfide, gallium selenide, arsenic sulfide, arsenic selenide, arsenic telluride, antimony sulfide, antimony selenide, antimony telluride, bismuth sulfide, bismuth selenide, bismuth telluride, silicon, silicon carbide, germanium, tin, selenium, tellurium, boron, carbon, phosphorus, boron nitride, boron phosphide, boron arsenide, aluminum nitride, aluminum sulfide, barium sulfide, barium selenide, barium telluride, gallium sulfide Calcium, calcium selenide, calcium telluride, beryllium sulfide, beryllium selenide, beryllium telluride, magnesium sulfide, magnesium selenide, germanium sulfide, germanium selenide, germanium telluride, tin sulfide, tin selenide, tin telluride, lead oxide, copper fluoride, copper chloride, copper bromide, copper iodide, copper oxide, copper selenide, nickel oxide, cobalt oxide, cobalt sulfide, iron oxide, iron sulfide, manganese oxide, molybdenum sulfide, vanadium oxide, tungsten oxide, Examples include tantalum oxide, titanium oxide, zirconium oxide, silicon nitride, germanium nitride, aluminum oxide, barium titanate, compounds of selenium, zinc, and cadmium, compounds of indium, arsenic, and phosphorus, compounds of cadmium, selenium, and sulfur, compounds of cadmium, selenium, and tellurium, compounds of indium, gallium, and arsenic, compounds of indium, gallium, and selenium, compounds of indium, selenium, and sulfur, compounds of copper, indium, and sulfur, and combinations thereof. In addition, so-called alloy-type quantum dots, whose composition is expressed in any ratio, may also be used.

[0108] Quantum dot (QD) structures include core type, core-shell type, and core-multishell type. Furthermore, because quantum dots (QDs) have a high proportion of surface atoms, they are highly reactive and prone to aggregation. Therefore, to prevent aggregation of quantum dots (QDs) and improve their dispersibility in the dispersion medium, it is preferable that a protective agent is attached to the surface of the quantum dots, or that protective groups are provided. This can also reduce reactivity and improve electrical stability.

[0109] As the size of a quantum dot (QD) decreases, its band gap increases; therefore, its size is adjusted appropriately to obtain light of a desired wavelength. As the crystal size decreases, the emission of quantum dots (QDs) shifts to shorter wavelengths, i.e., to higher energy; therefore, by changing the size of the quantum dots, the emission wavelength can be adjusted across the ultraviolet, visible, and infrared wavelength regions. The size (diameter) of the quantum dots is, for example, 0.5 nm to 20 nm, preferably 1 nm to 10 nm. The narrower the size distribution of the quantum dots, the narrower the emission spectrum becomes, resulting in emission with good color purity. Furthermore, the shape of the quantum dots (QDs) is not particularly limited and may be spherical, rod-shaped, disc-shaped, or other shapes. Rod-shaped quantum rods have the function of exhibiting directional light.

[0110] The color conversion material in the color conversion layer 109 can be a material that emits light when excited by the light emitted by the light-emitting device 130. For example, by making the color of the light emitted by the color conversion material the complementary color of the light emitted by the light-emitting device 130, white light can be emitted from the color conversion layer 109.

[0111] For example, by configuring the color conversion layer 109 to have a color conversion material that emits yellow light and the light-emitting device 130 to emit blue light, white light is emitted from the color conversion layer 109. Also, in a sub-pixel 110a provided with a colored layer 107a that transmits red light, the light emitted by the light-emitting device 130 passes through the color conversion layer 109 and the colored layer 107a, resulting in the emission of red light. Similarly, in a sub-pixel 110b provided with a colored layer 107b that transmits green light, the light emitted by the light-emitting device 130 passes through the color conversion layer 109 and the colored layer 107b, resulting in the emission of green light. In a sub-pixel 110c provided with a colored layer 107c that transmits blue light, the light emitted by the light-emitting device 130 passes through the color conversion layer 109 and the colored layer 107c, resulting in the emission of blue light.

[0112] One aspect of the present invention allows for color display using a single type of light-emitting device 130. Furthermore, since only one type of light-emitting device 130 is used in the display device, the manufacturing process can be simplified. Therefore, one aspect of the present invention provides a display device with low manufacturing costs, high brightness, high contrast, fast response speed, and low power consumption.

[0113] The combination of the color of light emitted from the color conversion material of the color conversion layer 109 and the color of light emitted by the light-emitting device 130 is not particularly limited. For example, the color conversion layer 109 may emit white light by having a color conversion material that emits red light and the light-emitting device 130 emit blue-green light. Alternatively, the color conversion layer 109 may emit white light by having a color conversion material that emits red light, a color conversion material that emits green light, and a color conversion material that emits blue light, and the light-emitting device 130 emit near-ultraviolet light or violet light.

[0114] It is preferable to have a protective layer 131 on the light-emitting device 130. Providing the protective layer 131 can improve the reliability of the light-emitting device 130. The protective layer 131 may be a single layer or a laminated structure of two or more layers.

[0115] The conductivity of the protective layer 131 is not required. The protective layer 131 can be at least one of an insulating film, a semiconductor film, and a conductive film.

[0116] The presence of an inorganic film in the protective layer 131 suppresses oxidation of the conductive layer 115 and prevents impurities (such as moisture and oxygen) from entering the light-emitting device 130. Therefore, degradation of the light-emitting device 130 is suppressed, and the reliability of the display device can be improved.

[0117] The protective layer 131 can be an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxidoxide-nitriding insulating film, and an oxide-nitriding insulating film. Specific examples of these inorganic insulating films are given in the description of the insulating layer 125. In particular, the protective layer 131 preferably has a nitride insulating film or an oxide-nitriding insulating film, and more preferably a nitride insulating film.

[0118] The protective layer 131 may also be an inorganic film containing In-Sn oxide (also known as ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or indium gallium zinc oxide (In-Ga-Zn oxide, also known as IGZO). The inorganic film is preferably highly resistive, and more specifically, it is preferably more resistive than the conductive layer 115. The inorganic film may further contain nitrogen.

[0119] When the light emitted from the light-emitting device 130 is extracted via a protective layer 131, it is preferable that the protective layer 131 has high transmittance to visible light. For example, ITO, IGZO, and aluminum oxide are preferred because they are inorganic materials with high transmittance to visible light.

[0120] The protective layer 131 can be, for example, a laminated structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film. By using such a laminated structure, the diffusion of impurities (e.g., water and oxygen) to the LED layer 134 can be suppressed.

[0121] The protective layer 131 may further have an organic film. For example, the protective layer 131 may have both an organic film and an inorganic film. Examples of organic materials that can be used for the protective layer 131 include organic insulating materials that can be used for the filling layer 127.

[0122] The protective layer 131 may have a two-layer structure formed using different film deposition methods. Specifically, the first layer of the protective layer 131 may be formed using the ALD method, and the second layer of the protective layer 131 may be formed using the sputtering method.

[0123] A light-shielding layer may be provided on the surface of the substrate 120 facing the resin layer 122. Various optical components can also be placed on the outside of the substrate 120. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-collecting films. Furthermore, surface protection layers such as an antistatic film to suppress dust adhesion, a water-repellent film to prevent dirt from adhering, a hard coat film to suppress scratches during use, and an impact-absorbing layer may be placed on the outside of the substrate 120. For example, a glass layer or a silica layer (SiO2) may be used as the surface protection layer. x By providing a protective layer, surface contamination and scratching can be suppressed, which is preferable. The surface protective layer may be made of DLC (diamond-like carbon) or aluminum oxide (AlO2). x ), polyester-based materials, or polycarbonate-based materials may be used. It is preferable to use a material with high transmittance to visible light for the surface protective layer. Furthermore, it is preferable to use a material with high hardness for the surface protective layer.

[0124] The substrate 120 can be made of glass, quartz, ceramics, sapphire, resin, metal, alloy, or semiconductor. The substrate on the side that extracts light from the light-emitting device 130 should be made of a material that transmits the light. Using a flexible material for the substrate 120 can increase the flexibility of the display device and realize a flexible display. Alternatively, a polarizing plate may be used as the substrate 120.

[0125] The substrate 120 can be made of polyester resins such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, or cellulose nanofiber. Glass with a thickness sufficient to provide flexibility may also be used for the substrate 120.

[0126] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0127] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0128] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0129] When a film is used for the substrate 120, the film may absorb water, which could cause changes in shape, such as wrinkles, in the display device. Therefore, it is preferable to use a film with a low water absorption rate for the substrate 120. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0130] The resin layer 122 can be made of various types of curing adhesives, such as UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, or anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0131] The following describes a configuration example different from the aforementioned <Configuration Example 1-1>. Note that parts that overlap with <Configuration Example 1-1> may be omitted from the explanation. Also, in the drawings shown below, parts having the same function as <Configuration Example 1-1> may use the same hatching pattern and may not be labeled.

[0132] <Configuration Example 1-2> Figure 8 shows a cross-sectional view of a display device according to one aspect of the present invention. A top view can be found in Figure 1A. Figures 9A and 9B show enlarged views of a portion of the cross-sectional view shown in Figure 8.

[0133] The display device shown in Figure 8 differs from the display device shown in <Configuration Example 1-1> in that it has a reflective layer 121 between the insulating layer 125 and the filling layer 127. Preferably, the reflective layer 121 has a region that overlaps with the side surface of the LED layer 134. The reflective layer 121 has the function of reflecting light emitted from the LED layer 134. By providing the reflective layer 121, light emitted from the side surface of the LED layer 134 can be reflected to the conductive layer 115 side or the conductive layer 132 side. This can increase the brightness of the display device 100. In addition, by providing the reflective layer 121, light leaking to adjacent sub-pixels (also called stray light) through the insulating layer 125 and the filling layer 127 can be suppressed. This can improve the display quality of the display device 100. Figure 9A schematically shows the light emitted from the LED layer 134 to the adjacent sub-pixel side with arrows. As shown in Figure 9A, by reflecting the light emitted from the LED layer 134 to the adjacent sub-pixel side with the reflective layer 121, it is possible to suppress light leaking to the adjacent sub-pixel (also called stray light).

[0134] The reflective layer 121 is preferably formed of a material with high reflectivity of light emitted by the light-emitting device 130. The reflective layer 121 can be made of metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, tin, zinc, silver, platinum, gold, molybdenum, tantalum, or tungsten, or alloys mainly composed of these metals (for example, an alloy of silver, palladium, and copper (APC: Ag-Pd-Cu)). The reflective layer 121 may be a laminate of two or more of the aforementioned materials.

[0135] When a reflective layer 121 is provided, it is preferable to provide an insulating layer 125 between the reflective layer 121 and the conductive layer 132, the connecting layer 144, and the conductive layer 111. By covering the sides of the conductive layer 132, the connecting layer 144, and the conductive layer 111 with the insulating layer 125, it is possible to suppress contact between the conductive layer 115 and one or more of the conductive layer 132, the connecting layer 144, and the conductive layer 111 via the reflective layer 121. Therefore, a short circuit of the light-emitting device 130 can be suppressed, and the reliability of the light-emitting device 130 can be improved.

[0136] When a reflective layer 121 is provided, a material with high light transmittance may be used for the packing layer 127, and the packing layer 127 may be configured not to have light-shielding properties. By providing a reflective layer 121, it is possible to suppress light (stray light) leaking to adjacent subpixels. Alternatively, a reflective layer 121 may be provided, and the packing layer 127 may have light-shielding properties.

[0137] As shown in Figure 9B, in cross-sectional view, it is preferable that the end of the reflective layer 121 has a tapered shape. The angle θ3 between the side surface of the reflective layer 121 and the surface to be formed (in this case, the insulating layer 125) is preferably less than 90°, more preferably 60° or less, more preferably 45° or less, and more preferably 20° or less. By making the mask layer 118 tapered, the filling layer 127 provided on the reflective layer 121 can be formed with high coverage. By forming the filling layer 127 with high coverage, the conductive layer 115 provided on the filling layer 127 can be formed with even higher coverage.

[0138] <Configuration Example 1-3> Figure 10 shows a cross-sectional view of a display device according to one aspect of the present invention. A top view can be found in Figure 1A. Figures 11A and 11B show enlarged views of a portion of the cross-sectional view shown in Figure 10.

[0139] The display device shown in Figure 10 differs from the display device shown in <Configuration Example 1-1> in that it has a mask layer 118 between the insulating layer 125 and the LED layer 134. The mask layer 118 is provided on the LED layer 134. The mask layer 118 is a portion of the mask layer that was provided in contact with the upper surface of the LED layer 134 when the LED layer 134 was formed. In one embodiment of the present invention, a portion of the mask layer used to protect the LED layer 134 during its manufacture may remain. Note that Figure 10 shows an example in which the mask layer 118 is not provided on the conductive layer 123 at the connection portion 140.

[0140] In this specification, the mask film and the mask layer are each located at least above the LED layer and have the function of protecting the LED layer during the manufacturing process. By providing a mask layer on the LED layer, damage to the LED layer during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0141] One end of the mask layer 118 is aligned with, or approximately aligned with, the end of the LED layer 134, and the other end of the mask layer 118 is located on the LED layer 134. The mask layer 118 is located, for example, between the upper surface of the island-shaped LED layer 134 and the insulating layer 125.

[0142] A portion of the upper surface of the LED layer 134 is covered by the mask layer 118. The insulating layer 125 and the filling layer 127 have regions that overlap with a portion of the upper surface of the LED layer 134 via the mask layer 118.

[0143] Furthermore, the same material can be used for the insulating layer 125 and the mask layer 118. In this case, the boundary between the mask layer 118 and the insulating layer 125 may become unclear and indistinguishable. Therefore, the mask layer 118 and the insulating layer 125 may be observed as a single layer. That is, one layer may be observed to be in contact with a part of the upper surface and side surface of the LED layer 134, and the filling layer 127 may be observed to cover at least a part of the side surface of that single layer.

[0144] As shown in Figure 11A, a mask layer 118 is provided in contact with a portion of the upper surface of the LED layer 134. An insulating layer 125 is provided in contact with the upper and side surfaces of the mask layer 118, the side surfaces of the LED layer 134, the side surfaces of the conductive layer 132, the side surfaces of the connecting layer 144, the side surfaces of the conductive layer 111, and the upper surface of layer 101. A filling layer 127 is provided in contact with the upper surface of the insulating layer 125. The filling layer 127 may also have a region in contact with the mask layer 118. Furthermore, the filling layer 127 may also have a region in contact with the LED layer 134. A conductive layer 115 is provided covering the LED layer 134, the mask layer 118, the insulating layer 125, and the filling layer 127.

[0145] As shown in Figure 11B, in cross-sectional view, it is preferable that the ends of the mask layer 118 have a tapered shape. The angle θ4 between the side surface of the mask layer 118 and the surface to be formed (in this case, the LED layer 134) is preferably less than 90°, more preferably 60° or less, more preferably 45° or less, and more preferably 20° or less. By making the mask layer 118 tapered, the filling layer 127 provided on the mask layer 118 can be formed with high coverage. By forming the filling layer 127 with high coverage, the conductive layer 115 provided on the filling layer 127 can be formed with even higher coverage.

[0146] It is preferable that the edges of the mask layer 118 are located outside the edges of the insulating layer 125. This reduces the unevenness of the surface on which the conductive layer 115 is formed, thereby improving the coverage of the conductive layer 115.

[0147] As shown in Figure 12A, the connection portion 140 may have a conductive layer 123 and a connecting layer 144 on the conductive layer 123. The conductive layer 123 is electrically connected to the conductive layer 115 via the conductive layer 123 and the connecting layer 144. Alternatively, as shown in Figure 12B, the connecting layer 144 may be omitted. The conductive layer 132 of the light-emitting device 130 can be configured to be in direct contact with the conductive layer 111 and electrically connected.

[0148] <Configuration Example 1-4> Figures 13A and 13B show cross-sectional views of a display device according to one aspect of the present invention. A top view can be found in Figure 1A.

[0149] As shown in Figure 13A, a lens 133 may be provided on the light-emitting device 130. Figure 13A shows an example in which a lens 133 is provided on the light-emitting device 130 via a protective layer 131. By directly forming the lens 133 on the substrate on which the light-emitting device 130 is formed, the accuracy of the alignment between the light-emitting device 130 and the lens 133 can be improved.

[0150] As shown in Figure 13B, a lens 133 may be provided on the light-emitting device 130 via a protective layer 131 and a resin layer 122. The substrate 120 on which the lens 133 is provided can be bonded to the protective layer 131 via the resin layer 122. By providing the lens 133 on the substrate 120, the temperature of the heat treatment in these formation processes can be increased.

[0151] The lens 133 may have its convex surface facing either the substrate 120 side or the light-emitting device 130 side.

[0152] The lens 133 can be formed using at least one of an inorganic material and an organic material. For example, a material containing a resin can be used. Alternatively, a material containing at least one of an oxide and a sulfide can be used. For example, the lens 133 can be a microlens array. The lens 133 may be formed directly on a substrate or on a light-emitting device, or a separately formed lens array may be bonded to it.

[0153] <Configuration Examples 1-5> A cross-sectional view of a display device according to one aspect of the present invention is shown in Figure 14A. A top view can be found in Figure 1A.

[0154] As shown in Figure 14A, a light-shielding layer 135 may be provided. The light-shielding layer 135 is provided between adjacent colored layers 107. The light-shielding layer 135 also has an opening in the region that overlaps with the light-emitting device 130. By providing the light-shielding layer 135, light emitted from the adjacent light-emitting device 130 is blocked, and color mixing can be suppressed. Here, by providing the edge of the colored layer 107 to overlap with the light-shielding layer 135, light leakage can be suppressed. The light-shielding layer 135 can be made of a material with low transmittance, for example, a metal material or a resin material containing a pigment or dye can be used.

[0155] As shown in Figure 14B, a configuration in which parts of adjacent colored layers 107 overlap is also possible. The region where the colored layers 107 overlap functions as a light-shielding layer. In Figure 14B, an example is shown in which colored layers 107a, 107b, and 107c are formed on the substrate 120 in this order, but the formation order of each colored layer 107 is not particularly limited.

[0156] <Configuration Example 1-6> A cross-sectional view of a display device according to one aspect of the present invention is shown in Figure 15A. A top view can be found in Figure 1A.

[0157] As shown in Figure 15A, sub-pixels without a color conversion layer 109 may be provided. Sub-pixels that emit light of the shortest wavelength range can be configured without a color conversion layer 109. The sub-pixel 110c shown in Figure 15A does not have a color conversion layer 109, and the light emitted from the light-emitting device 130 passes through the colored layer 107c and is emitted outside the display device.

[0158] For example, if the sub-pixel 110a emits red light, the sub-pixel 110b emits green light, and the sub-pixel 110c emits blue light, then the sub-pixel 110c does not need to have a color conversion layer 109. Alternatively, the color conversion layers 109 provided in the sub-pixels 110a and 110b may be configured to have a color conversion material that emits yellow light. In the sub-pixel 110a, which has a colored layer 107a that transmits red light, the light emitted by the light-emitting device 130 passes through the color conversion layer 109 and the colored layer 107a, resulting in the emission of red light. Similarly, in the sub-pixel 110b, which has a colored layer 107b that transmits green light, the light emitted by the light-emitting device 130 passes through the color conversion layer 109 and the colored layer 107b, resulting in the emission of green light. In a sub-pixel 110c provided with a colored layer 107c that transmits blue light, the light emitted by the light-emitting device 130 passes through the colored layer 107c, thereby emitting blue light.

[0159] It is preferable to provide a light-shielding layer 135 between adjacent colored layers 107. By providing the light-shielding layer 135, light emitted from the adjacent light-emitting device 130 is blocked, and color mixing can be suppressed.

[0160] As shown in Figure 15B, the sub-pixel 110c may be configured without a color conversion layer and a coloring layer.

[0161] <Configuration Example 1-7> Figure 16A shows a top view of a different display device 100 than that shown in Figure 1A. Figure 16B shows a cross-sectional view between the dashed-dotted lines X3 and X4 in Figure 16A. For a cross-sectional view between the dashed-dotted lines Y1 and Y2, please refer to Figure 1B.

[0162] As shown in Figures 16A and 16B, the pixel 110 is composed of four types of subpixels: subpixel 110a, subpixel 110b, subpixel 110c, and subpixel 110d. The subpixel 110d may be configured without a coloring layer 107.

[0163] For example, by configuring the color conversion layer 109 to have a color conversion material that emits yellow light and the light-emitting device 130 to emit blue light, white light is emitted from the color conversion layer 109. Also, in a sub-pixel 110a provided with a colored layer 107a that transmits red light, the light emitted by the light-emitting device 130 passes through the color conversion layer 109 and the colored layer 107a, resulting in the emission of red light. Similarly, in a sub-pixel 110b provided with a colored layer 107b that transmits green light, the light emitted by the light-emitting device 130 passes through the color conversion layer 109 and the colored layer 107b, resulting in the emission of green light. In a sub-pixel 110c provided with a colored layer 107c that transmits blue light, the light emitted by the light-emitting device 130 passes through the color conversion layer 109 and the colored layer 107c, resulting in the emission of blue light. In subpixels 110d where a colored layer is not provided, the light emitted by the light-emitting device 130 passes through the color conversion layer 109, resulting in the emission of white light.

[0164] By configuring the sub-pixel 110d to emit white light, one color can be represented using four sub-pixels of R (red), G (green), B (blue), and W (white). This reduces the current flowing through the light-emitting device 130 compared to a configuration that uses three sub-pixels of red (R), green (G), and blue (B) to represent one color, resulting in a display device with lower power consumption.

[0165] This embodiment can be combined with other embodiments as appropriate. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be combined as appropriate.

[0166] A method for manufacturing a display device according to one aspect of the present invention will be described.

[0167] <Example of manufacturing method 1> Here, the method for fabricating the display device shown in Figure 12A will be explained using Figures 17A to 23C. Figures 17B to 17D and Figures 20A to 23C show side by side the cross-sectional view between the dashed-dotted lines X1 and X2 shown in Figure 12A and the cross-sectional view between the dashed-dotted lines Y1 and Y2. Note that in Figures 17A to 23C, transistor 105 shown in Figure 12A is omitted.

[0168] Thin films (insulating films, semiconductor films, and conductive films, etc.) that constitute display devices can be formed using sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD), atomic layer deposition (ALD), and other methods. Examples of CVD methods include plasma-enhanced chemical vapor deposition (PECVD) and thermal CVD. One type of thermal CVD method is metal-organic chemical vapor deposition (MOCVD).

[0169] Thin films (insulating films, semiconductor films, conductive films, etc.) that constitute a display device can be formed by wet film deposition methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0170] When processing the thin films that constitute the display device, photolithography can be used. The thin films may also be processed by nanoimprint lithography, sandblasting, or lift-off lithography. Alternatively, island-shaped thin films may be directly formed by a film deposition method using a shielding mask such as a metal mask.

[0171] There are two main methods of photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film by etching or other means, and finally removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0172] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other options include ultraviolet light, KrF laser light, or ArF laser light. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light or X-rays may be used as the light source for exposure. An electron beam can also be used instead of the light source. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it allows for extremely fine processing. Note that a photomask is not required when exposure is performed by scanning a beam such as an electron beam.

[0173] For etching thin films, methods such as dry etching, wet etching, or sandblasting can be used.

[0174] First, the formation of the LED substrate 188 shown in Figures 17A and 18A will be explained. Figure 17A shows a cross-sectional view of the LED substrate 188, and Figure 18A shows a perspective view of the LED substrate 188. The LED substrate 188 has an LED film 134f which becomes the LED layer 134, and a conductive film 132f which becomes the conductive layer 132.

[0175] A semiconductor film 182f, which will become a semiconductor layer 182, an emissive film 184f, which will become an emissive layer 184, and a semiconductor film 186f, which will become a semiconductor layer 186, are formed on the substrate 180. The semiconductor film 182f, the emissive film 184f, and the semiconductor film 186f can each be formed, for example, using epitaxial growth. Epitaxial growth methods include solid-phase epitaxial growth (SPE), liquid-phase epitaxial growth (LPE), and vapor-phase epitaxial growth (VPE). When using vapor-phase epitaxial growth (VPE), for example, the semiconductor film 182f, the emissive film 184f, and the semiconductor film 186f can be formed using the MOCVD method.

[0176] The substrate 180 can be a single crystal substrate of sapphire, silicon carbide, silicon, or a compound semiconductor. The compound semiconductor can be a compound containing the aforementioned Group 13 and Group 15 elements. When epitaxially growing the LED film 134f, it is preferable that the substrate 180 is made of a material whose lattice constant is the same as, or slightly different from, the film constituting the LED film 134f. A layer (also called a buffer layer) that relieves lattice strain between the substrate 180 and the LED film 134f may be provided between the substrate 180 and the LED film 134f. Although Figure 18A shows the substrate 180 as circular, the shape of the substrate 180 is not particularly limited.

[0177] For example, when forming a light-emitting device 130 that emits blue light, gallium nitride (GaN) can be used for the film constituting the LED film 134f. In this case, for example, a sapphire substrate can be used for the substrate 180.

[0178] For example, when forming a light-emitting device 130 that emits red light, gallium aluminum arsenide (AlGaAs) can be used for the film constituting the LED film 134f. In this case, for example, a gallium arsenide (GaAs) substrate can be used for the substrate 180.

[0179] Next, a conductive film 132f is formed on the semiconductor film 186f. The conductive film 132f can be formed by, for example, sputtering or vacuum deposition. Alternatively, a film formed by deposition and a film formed by sputtering may be stacked.

[0180] Next, a method for forming a light-emitting device 130, etc., on a layer 101 having a transistor will be described.

[0181] A conductive film 111f, which will become the conductive layer 111, is formed on the layer 101 containing the transistor (Figure 17B). The conductive film 111f can be formed by, for example, sputtering or vacuum deposition. Note that the transistor contained in layer 101 is omitted in Figure 17B and subsequent figures.

[0182] Next, a connecting layer 144 is formed on the conductive film 111f (Figure 17C).

[0183] Next, the aforementioned LED substrate 188 is bonded onto the connecting layer 144 (Figure 17D). The bonding is performed so that the connecting layer 144 and the conductive film 132f are in contact. By bonding the LED substrate 188 with layer 101 while the entire surface of the LED substrate 188 is covered with the LED film 134f and the conductive film 132f, high precision is not required for the alignment of the LED substrate 188 and layer 101, thereby increasing productivity. Furthermore, the formation of alignment markers can be eliminated.

[0184] Here, a configuration is shown in which the conductive film 132f and the conductive film 111f are electrically connected via a connecting layer 144, but the present invention is not limited to this. The conductive film 132f and the conductive film 111f may be directly joined. For example, it is preferable to use copper for the conductive film 132f and the conductive film 111f. This allows the application of Cu-Cu direct bonding technology (a technology that achieves electrical conductivity by connecting copper to copper).

[0185] As shown in Figures 18B and 18C, by making the shape and size of the LED substrate 188 and the layer 101 the same, the bonding of the LED substrate 188 and the layer 101 can be facilitated. Alternatively, the LED substrate 188 may be cut after fabrication, and the cut LED substrate 188 may be bonded together.

[0186] In Figure 18B, the area to be used as a display device is indicated by a dashed line on the connecting layer 144. As shown in Figure 18B, multiple display devices can be provided on a single layer 101. Furthermore, since multiple light-emitting devices provided on these display devices can be formed by bonding a single LED substrate 188 together, the productivity of the display device can be increased. Note that the number, shape, and position of the display devices provided on layer 101 are not limited to the area shown in Figure 18B.

[0187] The shape and size of the LED substrate 188 and the layer 101 may differ. Figures 19A and 19B show an example where the LED substrate 188 is circular, the layer 101 is rectangular, and the size of the layer 101 is larger than the size of the LED substrate 188. Even when the shape and size of the LED substrate 188 and the layer 101 differ, by using an LED substrate 188 that is sized to encompass the area of ​​one display device, high precision is not required for the alignment of the LED substrate 188 and the layer 101, thereby increasing productivity. Although Figures 19A and 19B show an example in which a light-emitting device provided in one display device is formed on one LED substrate 188, the present invention is not limited to this. A single LED substrate 188 may be used to form light-emitting devices provided in multiple display devices.

[0188] Next, the substrate 180 is peeled off to expose the LED film 134f (Figure 20B). There are no limitations on the method of peeling off the substrate 180; for example, the laser lift-off (LLO) method can be used. Figure 20A schematically shows the laser irradiated onto the substrate 180 with arrows.

[0189] Alternatively, a release layer may be provided between the substrate 180 and the LED film 134f, and the substrate 180 may be peeled off from the LED film 134f using this release layer. For example, a material that can be removed by wet etching can be used for the release layer. For example, aluminum arsenide (AlAs) can be used for the release layer.

[0190] Next, a mask film 118f, which will become the mask layer 118, is formed on the LED film 134f (Figure 20C). While this example shows a single-layer mask film 118f, a stacked structure of two or more layers is also possible.

[0191] By providing a mask film 118f on the LED film 134f, damage to the LED film 134f during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device 130 can be improved.

[0192] It is preferable to use a mask film 118f that has high resistance to the processing conditions of the LED film 134f, specifically a film with a high selectivity ratio for etching with the LED film 134f.

[0193] It is preferable to use a mask film 118f that can be removed by a wet etching method. By using a wet etching method, the damage to the LED film 134f during processing of the mask film 118f can be reduced compared to when a dry etching method is used.

[0194] The mask film 118f can be formed using, for example, sputtering, ALD, CVD, or vacuum deposition. As an ALD method, for example, thermal ALD or PEALD can be used. The ALD method is preferably used for forming the mask film 118f. Using the ALD method reduces the damage to the LED film 134f during the formation of the mask film 118f. Alternatively, a wet deposition method may be used for forming the mask film 118f.

[0195] The mask film 118f can be one or more of the following: a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, and an inorganic insulating film.

[0196] The mask film 118f can be made of a metallic material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or an alloy material containing such a metallic material. In particular, it is preferable to use a low-melting-point material such as aluminum or silver. Using a metallic material capable of shielding ultraviolet light for the mask film 118f is preferable because it can suppress the incidence of ultraviolet light on the LED film 134f during the manufacturing process, thereby suppressing the degradation of the LED film 134f.

[0197] The mask film 118f can be made of metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), or silicon-containing indium tin oxide.

[0198] In addition, element M (where M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) may be used instead of gallium.

[0199] As the mask film 118f, a film containing a material that has light-shielding properties against light, particularly ultraviolet light, can be used. For example, a film that reflects ultraviolet light or a film that absorbs ultraviolet light can be used. Various materials can be used as the light-shielding material, such as metals, insulators, semiconductors, and metalloids that have light-shielding properties against ultraviolet light. However, since part or all of the mask film will be removed in a later process, it is preferable that the film be processable by etching, and in particular, that it has good processability.

[0200] For example, semiconductor materials such as silicon or germanium can be used as materials with high affinity to semiconductor manufacturing processes. Alternatively, oxides or nitrides of the above semiconductor materials can be used. Alternatively, nonmetallic materials such as carbon, or compounds thereof, can be used. Alternatively, metals such as titanium, tantalum, tungsten, chromium, and aluminum, or alloys containing one or more of these, can be used. Alternatively, oxides containing the above metals such as titanium oxide or chromium oxide, or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0201] By using a mask film 118f containing a material that has light-shielding properties against ultraviolet light, it is possible to suppress the incidence of ultraviolet light on the LED film 134f during the exposure process. By suppressing damage to the LED film 134f from ultraviolet light, the reliability of the light-emitting device can be improved.

[0202] Furthermore, a film containing a material that has light-shielding properties against ultraviolet light can be used as the material for the insulating film 125f, as described later, to achieve the same effect.

[0203] The mask film 118f can be an inorganic insulating film that can be used for the protective layer 131. In particular, an oxide insulating film is preferred because it has higher adhesion to the LED film 134f compared to a nitride insulating film. For example, the mask film 118f can preferably be aluminum oxide, hafnium oxide, or silicon oxide. The mask film 118f can be formed by creating an aluminum oxide film using, for example, the ALD method. Using the ALD method is preferred because it reduces damage to the substrate (especially the LED film 134f).

[0204] Furthermore, the same inorganic insulating film can be used for both the mask film 118f and the insulating layer 125 that is formed later. For example, an aluminum oxide film formed using the ALD method can be used for both the mask film 118f and the insulating layer 125. Here, the same film formation conditions may be applied to the mask film 118f and the insulating layer 125, or different film formation conditions may be applied to each. For example, by forming the mask film 118f under the same conditions as the insulating layer 125, the mask film 118f can be made into an insulating layer with high barrier properties against at least one of water and oxygen. On the other hand, since the mask film 118f is a layer that will be mostly or completely removed in a later process, it is preferable that it be easy to process. Therefore, it is preferable to form the mask film 118f under conditions where the substrate temperature during film formation is lower than that of the insulating layer 125.

[0205] Organic materials may be used for the mask film 118f. For example, as the organic material, a material that is soluble in a chemically stable solvent for at least the film located at the top of the LED film 134f may be used. Materials that are soluble in water or alcohol are particularly suitable. When forming such a film, it is preferable to dissolve the material in a solvent such as water or alcohol, apply it using a wet film formation method, and then perform a heat treatment to evaporate the solvent. At this time, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature and in a short time, thereby reducing thermal damage to the LED film 134f.

[0206] The mask film 118f may also be made of resins such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or fluororesin such as perfluoropolymer.

[0207] As described in Embodiment 1, in one embodiment of the present invention, a portion of the mask film 118f may remain as the mask layer 118 in the display device.

[0208] Next, a resist mask 190A is formed on the mask film 118f (Figure 20D). The resist mask 190A is formed in the region where the LED layer 134 is provided. The resist mask 190A can be formed by applying a photosensitive resin (photoresist), exposing it to light, and developing it. The resist mask 190A may be made using either a positive-type resist material or a negative-type resist material.

[0209] Next, the resist mask 190A is used as a mask to remove a portion of the mask film 118f and form a mask layer 118A (Figure 21A). The mask layer 118A is formed in the region where the LED layer 134 is to be installed and functions as a hard mask during the formation of the LED layer 134. After that, the resist mask 190A is removed.

[0210] The mask film 118f can be processed by wet etching or dry etching. Anisotropic etching is preferably used for processing the mask film 118f.

[0211] By using a wet etching method for processing the mask film 118f, the damage to the LED film 134f during processing can be reduced compared to using a dry etching method. When using a wet etching method, it is preferable to use a chemical solution containing, for example, a developer, an aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0212] When using a dry etching method for processing the mask film 118f, degradation of the LED film 134f can be suppressed by not using an oxygen-containing gas as the etching gas. When using a dry etching method, it is preferable to use a gas containing noble gases (also called rare gases) such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He as the etching gas.

[0213] For example, when using an aluminum oxide film formed by the ALD method as the mask film 118f, the mask film 118f can be processed by dry etching using CHF3 and He, or CHF3, He, and CH4. Alternatively, when using an In-Ga-Zn oxide film formed by the sputtering method as the mask film 118f, the mask film 118f can be processed by wet etching using diluted phosphoric acid. Alternatively, it may be processed by dry etching using CH4 and Ar. Alternatively, the mask film 118f can be processed by wet etching using diluted phosphoric acid. Furthermore, when using a tungsten film formed by the sputtering method as the mask film 118f, the mask film 118f can be processed by dry etching using SF6, CF4, and O2, or CF4, Cl2, and O2.

[0214] The resist mask 190A can be removed, for example, by ashing using oxygen plasma. Alternatively, oxygen gas and a noble gas such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He may be used. Alternatively, the resist mask 190A may be removed by wet etching. In this case, since the LED film 134f is not exposed in the region where the mask layer 118A is formed, damage to the LED film 134f during the resist mask 190A removal process can be suppressed. Furthermore, the range of selectable methods for removing the resist mask 190A can be broadened. Note that the resist mask 190A may be left in place without removal.

[0215] Next, using the mask layer 118A as a mask, a portion of the LED film 134f is removed to form the LED layer 134 and expose the conductive film 132f (Figure 21B).

[0216] The LED film 134f can be processed by either a wet etching method or a dry etching method, or both. Anisotropic etching is suitably used for processing the LED film 134f. By using anisotropic etching, the spacing between adjacent LED layers 134 can be reduced. The angle between the upper surface of layer 101 and the side surface of LED layer 134 is preferably perpendicular or approximately perpendicular. The angle between the upper surface of layer 101 and the side surface of LED layer 134 is preferably 60° or more and 90° or less, more preferably 70° or more and 90° or less, and more preferably 80° or more and 90° or less. By making the angle between the upper surface of layer 101 and the side surface of LED layer 134 perpendicular or approximately perpendicular, the aperture ratio of the pixels can be increased.

[0217] Next, a resist mask 190B is formed on the conductive film 132f (Figure 21C). The resist mask 190B is formed in the region where the conductive layer 123 is provided. Since the formation of the resist mask 190B can be described in the section on the formation of the resist mask 190A, a detailed explanation is omitted here.

[0218] Next, using the mask layer 118A and the resist mask 190B as masks, a portion of the conductive film 132f, the connecting layer 144, and the conductive film 111f is removed to form the conductive layer 132, the connecting layer 144, the conductive layer 111, and the conductive layer 123. After that, the resist mask 190B is removed (Figure 21D). The resist mask 190B can be removed using either a wet etching method or a dry etching method, or both.

[0219] As a result, a laminated structure of the connecting layer 144, the conductive layer 132, the LED layer 134, and the mask layer 118A is formed on the conductive layer 111. Additionally, a laminated structure of the connecting layer 144 and the conductive layer 132 is formed on the conductive layer 123. The mask layer 118A may be removed.

[0220] It is preferable that the edges of the LED layer 134, conductive layer 132, connecting layer 144, and conductive layer 111 are aligned or approximately aligned. At a minimum, it is preferable that the edges of the LED layer 134 and conductive layer 132 are aligned or approximately aligned. Figure 21D shows an example in which the edges of the LED layer 134, conductive layer 132, connecting layer 144, and conductive layer 111 are aligned with the edges of the mask layer 118A. This configuration allows for a higher aperture ratio of the pixels. One or more edges of the LED layer 134, conductive layer 132, connecting layer 144, and conductive layer 111 may be located outside the edges of the mask layer 118A, or inside the edges of the mask layer 118A. Although not shown, the etching process may form recesses in areas of layer 101 that do not overlap with the conductive layer 111 or conductive layer 123.

[0221] The side surface of the LED layer 134 is preferably perpendicular or approximately perpendicular to the upper surface of the layer 101. For example, the angle between the upper surface of the layer 101 and the side surface of the LED layer 134 is preferably 60° or more and 90° or less.

[0222] As described above, the distance between two adjacent LED layers 134 formed using photolithography can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, this distance can be defined, for example, by the distance between the opposing ends of two adjacent LED layers 134. By narrowing the distance between the island-shaped LED layers 134 in this way, a display device with high resolution and a high aperture ratio can be made.

[0223] Next, an insulating film 125f is formed to cover the conductive layer 111, the connecting layer 144, the conductive layer 132, the LED layer 134, and the mask layer 118A (Figure 22A).

[0224] Next, a packing film 127f, which will become the packing layer 127, is formed on the insulating film 125f (Figure 22B).

[0225] The insulating film 125f and the filler film 127f are preferably formed using a method that minimizes damage to the LED layer 134. In particular, since the insulating film 125f is formed in contact with the side surface of the LED layer 134, it is preferable that it be formed using a method that minimizes damage to the LED layer 134, even more so than the filler film 127f.

[0226] The insulating film 125f and the filler film 127f are formed at a temperature lower than the heat resistance temperature of the elements constituting layer 101, the conductive layer 111, the connecting layer 144, the conductive layer 132, and the LED layer 134, respectively. Since the LED layer 134, which uses inorganic materials, has a high heat resistance temperature, the insulating film 125f and the filler film 127f can be formed at a temperature lower than the heat resistance temperature of the elements constituting layer 101, the conductive layer 111, the connecting layer 144, and the conductive layer 132. Furthermore, by increasing the substrate temperature during film formation of the insulating film 125f, it is possible to create a film with a low impurity concentration and high barrier properties against at least one of water and oxygen, even with a thin film thickness.

[0227] The substrate temperature when forming the insulating film 125f and the packing film 127f is preferably 60°C or higher, 100°C or higher, 200°C or higher, 250°C or higher, or 300°C or higher, and 600°C or lower, 550°C or lower, 500°C or lower, or 450°C or lower, respectively.

[0228] Preferably, the insulating film 125f is formed within the above substrate temperature range with an insulating film thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less.

[0229] The insulating film 125f is preferably formed using, for example, the ALD method. The ALD method is preferable because it can reduce film formation damage and allow for the formation of a highly covering film. The insulating film 125f is preferably formed by creating an aluminum oxide film using, for example, the ALD method.

[0230] In addition, the insulating film 125f may be formed using sputtering, CVD, or PECVD, which have faster deposition rates than the ALD method. This allows for the production of highly reliable display devices with high productivity.

[0231] The filling film 127f is preferably formed using the wet film formation method described above. The filling film 127f is preferably formed using a photosensitive resin, for example, by spin coating, and more specifically, it is preferably formed using a photosensitive acrylic resin.

[0232] It is preferable to perform a heat treatment (also called pre-baking) after the formation of the packing film 127f. The heat treatment should be performed at a temperature lower than the heat resistance temperature of the packing film 127f. The substrate temperature during the heat treatment is preferably 50°C to 200°C, more preferably 60°C to 150°C, and even more preferably 70°C to 120°C. This allows for the removal of solvent contained in the packing film 127f.

[0233] Next, exposure is performed to expose a portion of the packing film 127f to visible light or ultraviolet light. Here, if a positive-type acrylic resin is used for the packing film 127f, visible light or ultraviolet light is irradiated to the area where the packing layer 127 is not formed. Figure 22C schematically shows the light used for exposure with arrows.

[0234] The width of the packed layer 127 formed can be controlled by the area exposed to light. In this embodiment, exposure is performed so that the packed layer 127 has a portion that overlaps with the upper surface of the LED layer 134. The packed layer 127 does not necessarily have to have a portion that overlaps with the upper surface of the LED layer 134.

[0235] The light used for exposure preferably includes the i-line (wavelength 365 nm). Furthermore, the light used for exposure may also include at least one of the g-line (wavelength 436 nm) and the h-line (wavelength 405 nm).

[0236] In this example, a positive-type photosensitive resin is used for the filling film 127f, and visible light or ultraviolet light is irradiated into the area where the filling layer 127 is not formed. However, the present invention is not limited to this. For example, a negative-type photosensitive resin may be used for the filling film 127f. In this case, visible light or ultraviolet light is irradiated into the area where the filling layer 127 is formed.

[0237] Next, development is performed to remove the exposed areas of the packing film 127f and form the packing layer 127 (Figure 22D). The packing layer 127 is formed in the area sandwiched between the two LED layers 134 and around the conductive layer 123. When acrylic resin is used for the packing film 127f, it is preferable to use an alkaline solution as the developer, for example, an aqueous solution of tetramethylammonium hydroxide (TMAH) can be used.

[0238] Next, the residue (so-called scum) from the development process may be removed. For example, the residue can be removed by ashing using oxygen plasma.

[0239] Here, etching may be performed to adjust the surface height of the packed layer 127. The packed layer 127 may also be processed, for example, by ashing using oxygen plasma. Furthermore, even when a non-photosensitive material is used for the packed film 127f, the surface height of the packed layer 127 can be adjusted by ashing or the like.

[0240] Next, the entire substrate may be exposed to visible light or ultraviolet light, irradiating the packed layer 127. The energy density of this exposure is 0 mJ / cm². 2 Even larger, 800 mJ / cm 2 The following is preferable: 0 mJ / cm 2 Larger, 500 mJ / cm 2 The following is more preferable: Performing such exposure after development may improve the transparency of the packed layer 127. In addition, it may be possible to lower the substrate temperature required for the heat treatment in a later process to deform the packed layer 127 into a tapered shape.

[0241] On the other hand, as will be described later, by not exposing the packed layer 127 to light, it may be easier to change the shape of the packed layer 127 or to deform the packed layer 127 into a tapered shape in a later process. Therefore, it may be preferable not to expose the packed layer 127 to light after development.

[0242] For example, when a photocurable resin is used as the material for the packing layer 127, polymerization can be initiated and the packing layer 127 can be cured by exposing the packing layer 127 to light. Alternatively, at least one of the first etching treatment, post-bake, and second etching treatment described later may be performed without exposing the packing layer 127 to light at this stage, while maintaining a state in which the packing layer 127 is relatively easy to change shape. This can suppress the occurrence of irregularities on the surface forming the conductive layer 115 and can also suppress the step breakage of the conductive layer 115. Alternatively, the packing layer 127 may be exposed to light after any of the first etching treatment, post-bake, and second etching treatment described later.

[0243] Next, the packed layer 127 is used as a mask to perform an etching process, removing part of the insulating film 125f and the mask layer 118A, thereby forming the insulating layer 125 and the mask layer 118 (Figure 23A). This exposes the upper surface of the LED layer 134.

[0244] The etching process can be performed using either a dry etching method or a wet etching method. Furthermore, if the insulating film 125f is made of the same material as the mask layer 118A, it is preferable because the etching process for both the insulating film 125f and the mask layer 118A can be performed simultaneously.

[0245] As shown in Figure 23A, by using a packed layer 127 with a tapered side surface as a mask for etching, the side surface of the insulating layer 125 and the upper end of the side surface of the mask layer 118 can be made tapered relatively easily.

[0246] When dry etching is used to form the insulating layer 125 and the mask layer 118, it is preferable to use a chlorine-based gas. As the chlorine-based gas, one or more of the following gases can be mixed and used: Cl2, BCl3, SiCl4, and CCl4. Alternatively, one or more of the following gases can be mixed with the chlorine-based gas: oxygen, hydrogen, helium, and argon. By using dry etching, regions of the mask layer 118 with thin film thickness can be formed with good in-plane uniformity.

[0247] As a dry etching apparatus, a dry etching apparatus having a high-density plasma source can be used. A dry etching apparatus having a high-density plasma source can be, for example, an inductively coupled plasma (ICP) etching apparatus. Alternatively, a capacitively coupled plasma (CCP) etching apparatus having parallel plate electrodes can be used. A capacitively coupled plasma etching apparatus having parallel plate electrodes may be configured to apply a high-frequency voltage to one electrode of the parallel plate electrodes. Alternatively, it may be configured to apply multiple different high-frequency voltages to one electrode of the parallel plate electrodes. Alternatively, it may be configured to apply a high-frequency voltage of the same frequency to each of the parallel plate electrodes. Alternatively, it may be configured to apply high-frequency voltages of different frequencies to each of the parallel plate electrodes.

[0248] When dry etching is performed, by-products generated during dry etching may accumulate on the top and sides of the packed layer 127. Therefore, components contained in the etching gas, components contained in the insulating layer 125, and components contained in the mask layer 118 may be present in the packed layer 127 of the fabricated display device.

[0249] It is preferable to use a wet etching method for forming the insulating layer 125 and the mask layer 118. By using a wet etching method, the damage to the LED layer 134 can be reduced compared to when a dry etching method is used. For example, wet etching can be performed using an alkaline solution. For example, for wet etching of an aluminum oxide film, it is preferable to use an aqueous solution of tetramethylammonium hydroxide (TMAH), which is an alkaline solution. In this case, wet etching can be performed using a paddle method. Furthermore, when the insulating film 125f is made of the same material as the mask layer 118A, it is preferable because the etching treatment of the insulating film 125f and the mask layer 118A can be performed at the same time.

[0250] Next, a heat treatment (also called post-bake) is performed. By performing the heat treatment, the side surface of the packed layer 127 can be deformed into a tapered shape (Figure 23B). The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 130°C. The heating atmosphere may be an atmospheric atmosphere or an inert gas atmosphere. The heating atmosphere may also be an atmospheric pressure atmosphere or a reduced pressure atmosphere. A reduced pressure atmosphere is preferable because it allows drying at a lower temperature. It is preferable to use a higher substrate temperature for the heat treatment in this step than for the heat treatment after the formation of the packed film 127f (pre-bake). This improves the adhesion between the packed layer 127 and the insulating layer 125, and also improves the corrosion resistance of the packed layer 127.

[0251] By exposing a portion of the LED layer 134 and then performing a heat treatment, water contained in the LED layer 134 and water adsorbed on the surface of the LED layer 134 can be removed. By performing the heat treatment in a reduced-pressure atmosphere, water can be removed at an even lower temperature.

[0252] As described above, by providing the filling layer 127, the insulating layer 125, and the mask layer 118, it is possible to suppress poor connection caused by portions where the conductive layer 115 is divided between the respective light-emitting devices 130, and an increase in electrical resistance caused by locally thin portions of the conductive layer 115. This makes it possible to obtain a display device with high display quality.

[0253] Subsequently, the conductive layer 115 and the protective layer 131 are formed in this order on the filling layer 127 and the LED layer 134 (FIG. 23C).

[0254] For forming the conductive layer 115, for example, a sputtering method or a vacuum evaporation method can be used. Alternatively, a film formed by an evaporation method and a film formed by a sputtering method may be laminated.

[0255] For forming the protective layer 131, for example, a vacuum evaporation method, a sputtering method, a CVD method, or an ALD method can be used.

[0256] Subsequently, a display device can be manufactured by bonding a substrate 120 provided with a colored layer 107 and a color conversion layer 109 onto the protective layer 131 using a resin layer 122 (FIG. 12A).

[0257] For forming the colored layer 107, for example, a lithography method can be used. The colored layer 107 can be formed by processing a photosensitive resin using a lithography method.

[0258] For forming the color conversion layer 109, a droplet discharge method (for example, an inkjet method), a coating method, an imprint method, or a printing method (screen printing, offset printing) can be used. A color conversion film (for example, a quantum dot film) may be used for the color conversion layer 109.

[0259] The color conversion layer 109 may be formed using lithography. For example, a resist mask can be formed on a film that will become the color conversion layer 109, and the film can be processed by etching or the like to remove the resist mask. Alternatively, a color conversion layer 109 of a desired shape can be formed by forming a photosensitive film, followed by exposure and development. For example, an island-shaped color conversion layer 109 can be formed by forming a film using a photosensitive material mixed with a color conversion material, and then processing the film using lithography.

[0260] As described above, in the method for manufacturing the display device of this embodiment, a film that will become the LED layer 134 is formed on one surface of the display area and then processed into island-shaped LED layers 134, thereby enabling the realization of a high-resolution display device or a display device with a high aperture ratio. Furthermore, even with high resolution or aperture ratio and extremely short distances between subpixels, contact between adjacent subpixels of the LED layer 134 can be suppressed. Therefore, leakage current between subpixels can be suppressed. This prevents crosstalk caused by unintended light emission, enabling the realization of a display device with extremely high contrast.

[0261] By providing a filling layer 127 having a tapered shape at its end between adjacent island-shaped LED layers 134, it is possible to suppress the occurrence of step breaks during the formation of the conductive layer 115 and to prevent the formation of locally thin areas in the conductive layer 115. This suppresses connection failures caused by the divided areas and increases in electrical resistance caused by locally thin areas in the conductive layer 115. Therefore, a display device according to one embodiment of the present invention can achieve both high resolution and high display quality.

[0262] This embodiment can be combined with other embodiments as appropriate.

[0263] (Embodiment 2) An example of a display device configuration different from that shown in the previous embodiment will be described using Figures 24 to 30. In the following, parts that overlap with the previous embodiment may be omitted from the explanation. Also, in the drawings shown below, parts that have the same function as in the previous embodiment may have the same hatching pattern and may not be labeled with reference numerals.

[0264] <Configuration Example 2-1> Figure 24A shows a cross-sectional view of a display device according to one embodiment of the present invention. A top view can be found in Figure 1A. Figure 24B shows an enlarged view of a part of the cross-sectional view shown in Figure 24A.

[0265] The display device shown in Figure 24A, etc., differs from the display device shown in Embodiment 1 in that a light-emitting diode (hereinafter also referred to as an LED chip) having a pair of electrodes is provided between the conductive layer 111 and the conductive layer 115. The LED chip 136 provided between the conductive layer 111 and the conductive layer 115 has a conductive layer 132, an LED layer 134 on the conductive layer 132, a conductive layer 137 on the LED layer 134, a connecting layer 138, and a substrate 139. The conductive layer 132 and the conductive layer 137 each function as electrodes of the LED chip 136. The LED layer 134 is sandwiched between the pair of electrodes (conductive layer 132 and conductive layer 137). The LED chip 136 can be described as a so-called vertical structure light-emitting diode, having the conductive layer 132 on one side of the LED layer 134 and the conductive layer 137 on the opposite side.

[0266] The connecting layer 138 and the substrate 139 can each be made of a conductive material. The conductive layer 132 is electrically connected to the substrate 139 via the connecting layer 138. The connecting layer 138 can be made of the same material as the connecting layer 144. The substrate 139 can be, for example, a conductive silicon substrate, a silicon carbide (SiC) substrate, a gallium arsenide (GaAs) substrate, a metal substrate, or an alloy substrate. Examples of metal substrates include substrates containing one or more of tungsten, copper, gold, nickel, and titanium. Examples of alloy substrates include Si-Al alloy substrates. The substrate 139 is electrically connected to the conductive layer 111 via the connecting layer 144. The conductive layer 132, connecting layer 138, substrate 139, connecting layer 144, and conductive layer 111 can be said to function together as a pixel electrode. Alternatively, the connecting layer 144 may be omitted, and the conductive layer 111 and the substrate 139 may be in direct contact and electrically connected.

[0267] A conductive layer 115 is provided on the conductive layer 137. Figures 24A and 24B show an example where the edge of the conductive layer 137 is located inward from the edge of the LED layer 134. The conductive layer 111 has a region that contacts the top and side surfaces of the conductive layer 137 and the top surface of the LED layer 134. The insulating layer 125 has a region that contacts part of the top and side surfaces of the conductive layer 137 and part of the top surface and side surfaces of the LED layer 134. The insulating layer 125 covers the edges of the conductive layer 137 and the edges of the LED layer 134, and the filler layer 127 is provided on the insulating layer 125. The conductive layer 115 is provided on the LED chip 136 and the filler layer 127.

[0268] By providing the insulating layer 125 and the filling layer 127, the step difference between the area where the LED chip 136 is provided and the area where the LED chip 136 is not provided can be reduced. Therefore, the unevenness of the surface on which the conductive layer 115, which functions as a common electrode, is formed can be reduced, and the coverage of the conductive layer 115 can be improved. Consequently, connection failures due to step breaks in the conductive layer 115 can be suppressed. In addition, it is possible to suppress the local thinning of the conductive layer 115 due to the step difference and the resulting increase in electrical resistance.

[0269] The insulating layer 125 may not cover the edges of the conductive layer 137. Preferably, the insulating layer 125 covers at least the sides of the LED layer 134.

[0270] When one or more of the conductive layer 132 or the substrate 139 is made of a material with low light transmittance, the LED chip 136 emits light towards the conductive layer 137. In other words, the display devices shown in Figures 24A and 24B can be of the top-emission type. It is preferable to use a material with high light transmittance for the conductive layer 115. Figure 24A schematically shows the light emitted from the substrate 120 side with white arrows as an example of the top-emission type. When a material with low light transmittance is used for the conductive layer 137, the area in which the conductive layer 137 is provided contributes less to light emission. Therefore, it is preferable that the area in which the conductive layer 137 is provided is small. Although one conductive layer 137 is shown in Figure 24A, etc., the number, shape, and size of the conductive layers 137 are not particularly limited.

[0271] <Configuration Example 2-2> Figure 25A shows a cross-sectional view of a display device according to one embodiment of the present invention. A top view can be found in Figure 1A. Figure 25B shows an enlarged view of a part of the cross-sectional view shown in Figure 25A.

[0272] The display devices shown in Figures 25A and 25B differ from the display device shown in <Configuration Example 2-1> in that the conductive layer 137 of the LED chip 136 is provided on the connecting layer 144, and the conductive layer 115 is provided on the substrate 139.

[0273] A substrate 120a is bonded via an adhesive layer 122a to the surface of layer 101 opposite to the surface on which the LED chip 136 is provided. It is preferable that each of the conductive layer 115, the substrate 120, and the adhesive layer 122a is formed using a material having high light transmittance. A colored layer 107 and a color conversion layer 109 are provided on the substrate 120a. Light emitted from the LED chip 136 transmits through the layer 101, the adhesive layer 122a, the color conversion layer 109, the colored layer 107, and the substrate 120a. The display device shown in FIGS. 25A and 25B can be a bottom emission type. FIG. 25A schematically shows light emitted from the substrate 120a side with outline arrows as an example of a bottom emission type.

[0274] It is preferable that a light shielding layer 117 is provided on the layer 101. By providing the light shielding layer 117 between the substrate 120a and the transistor 105 to block light reaching the transistor 105 from outside the display device, deterioration of the transistor 105 caused by light can be suppressed, and a highly reliable display device can be obtained.

[0275] <Manufacturing Method Example 2> A method for manufacturing the display device shown in FIG. 24A will be described.

[0276] First, formation of the LED chip 136 will be described with reference to FIGS. 26A to 27C. FIGS. 26A to 27C each show a cross-sectional view relating to formation of the LED chip 136.

[0277] An LED film 134f is formed on a substrate 180. For the formation of the LED film 134f, the description relating to FIG. 17A can be referred to, so a detailed description is omitted.

[0278] Subsequently, a resist mask 190A is formed on the LED film 134f (FIG. 26A).

[0279] Subsequently, using the resist mask 190A as a mask, a part of the LED film 134f is removed to form island-shaped LED layers 134. The resist mask 190A is removed, and a conductive layer 132 is formed on the LED layer 134 (FIG. 26B).

[0280] Subsequently, a substrate 139 provided with a connection layer 138 formed thereon is bonded onto the conductive layer 132 (FIG. 26C).

[0281] Subsequently, the substrate 180 is peeled off to expose the LED layer 134 (FIG. 27A). There is no limitation on the peeling method of the substrate 180, and for example, a laser lift-off (LLO) method can be used. FIG. 26D schematically shows a laser irradiated onto the substrate 180 with arrows.

[0282] Subsequently, a conductive layer 137 is formed on the LED layer 134 (FIG. 27B).

[0283] Subsequently, the connection layer 138 and the substrate 139 are cut and separated into individual LED chips 136 (FIG. 27C). There is no limitation on the method for cutting the connection layer 138 and the substrate 139, and for example, a dicing method or a scribing method can be used. Although FIG. 27C and the like show four LED chips 136 formed from one substrate 180, the number of LED chips 136 formed on one substrate 180 is not particularly limited.

[0284] The area of the light emitting region of the LED chip 136 is 1 mm 2 or less is preferable, and 10000 μm 2 or less is more preferable, and 3000 μm 2 or less is more preferable, and 700 μm 2 or less is even more preferable. Further, the area of the region is 1 μm 2 or more is preferable, and 10 μm 2 or more is more preferable, and 100 μm 2 or more is even more preferable. In the present specification and the like, a light emitting diode having an area of the light emitting region of 10000 μm 2 or less may be referred to as a micro LED in some cases.

[0285] It should be noted that the LED chips that can be used in a display device according to one embodiment of the present invention are not limited to the above-mentioned microLEDs. For example, the area of ​​the light-emitting region is 10,000 μm². 2 Larger LED chips (also called mini-LEDs) may be used.

[0286] Next, a method for fabricating a display device having an LED chip 136 will be explained using Figures 28A to 30B. Figures 28A to 30B show side by side the cross-sectional view between the dashed-dotted lines X1 and X2 shown in Figure 24A, and the cross-sectional view between the dashed-dotted lines Y1 and Y2. Note that in Figures 28A to 30B, the transistor 105 shown in Figure 24A is omitted.

[0287] A conductive layer 111 is formed on layer 101. A connecting layer 116 is formed on the conductive layer 111 (Figure 28A).

[0288] Next, an LED chip 136 is placed on the connection layer 116 (Figure 28B). The LED chip 136 can be placed on the connection layer 116 using, for example, a pick-and-place method. Here, the LED chip 136 is positioned so that the substrate 139 is in contact with the connection layer 116.

[0289] Next, an insulating film 125f is formed to cover the conductive layer 111, the connecting layer 116, and the LED chip 136 (Figure 28C).

[0290] Next, a packing film 127f, which will become the packing layer 127, is formed on the insulating film 125f (Figure 28D).

[0291] Next, exposure is performed to expose a portion of the packing film 127f to visible light or ultraviolet light. Figure 29A schematically shows the light used for exposure with arrows.

[0292] Next, development is performed to remove the exposed areas of the packing film 127f and form the packing layer 127 (Figure 29B). The packing layer 127 is formed in the area sandwiched between the two LED chips 136 and around the conductive layer 123.

[0293] Next, the packed layer 127 is used as a mask to perform an etching process to remove a portion of the insulating film 125f and form an insulating layer 125 (Figure 29C). This exposes the upper surfaces of the conductive layer 137 and the LED layer 134.

[0294] Next, a heat treatment (also called post-bake) is performed. By performing the heat treatment, the side surface of the packed bed 127 can be deformed into a tapered shape (Figure 30A).

[0295] Next, a conductive layer 115 and a protective layer 131 are formed on the packed layer 127, conductive layer 137, and LED layer 134 in that order (Figure 30B).

[0296] Next, the substrate 120, on which the colored layer 107 and the color conversion layer 109 are provided, is bonded onto the protective layer 131 using a resin layer 122 to create a display device (Figure 24A).

[0297] This embodiment can be combined with other embodiments as appropriate.

[0298] (Embodiment 3) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 31 and 32.

[0299] This embodiment primarily describes a pixel layout different from that shown in Figure 1A. There are no particular limitations on the arrangement of subpixels, and various methods can be applied. Examples of subpixel arrangements include stripe arrangements, S-stripe arrangements, matrix arrangements, delta arrangements, Bayer arrangements, and pentile arrangements.

[0300] In this embodiment, the upper surface shape of the sub-pixel shown in the figure corresponds to the upper surface shape of the light-emitting region.

[0301] Examples of the top surface shape of a sub-pixel include polygons such as triangles, quadrilaterals (including rectangles and squares), and pentagons, as well as polygons with rounded corners, ellipses, or circles.

[0302] The circuit layout constituting the sub-pixel may be the same as or different from the pixel layout. Furthermore, the circuit layout is not limited to the sub-pixel area shown in the figure, but may be located outside of it.

[0303] The pixel 110 shown in Figure 31A has an S-stripe array applied to it. The pixel 110 shown in Figure 31A is composed of three subpixels: subpixels 110a, 110b, and 110c.

[0304] The pixel 110 shown in Figure 31B includes a sub-pixel 110a with a roughly trapezoidal top surface shape with rounded corners, a sub-pixel 110b with a roughly triangular top surface shape with rounded corners, and a sub-pixel 110c with a roughly quadrilateral or hexagonal top surface shape with rounded corners. Furthermore, sub-pixel 110a has a larger light-emitting area than sub-pixel 110b. In this way, the shape and size of each sub-pixel can be determined independently. For example, sub-pixels with more reliable light-emitting devices can be made smaller in size.

[0305] A Pentile array is applied to pixels 124a and 124b shown in Figure 31C. Figure 31C shows an example in which pixels 124a having sub-pixels 110a and 110b, and pixels 124b having sub-pixels 110b and 110c are arranged alternately.

[0306] Pixels 124a and 124b, shown in Figures 31D to 31F, have a delta array applied. Pixel 124a has two subpixels (subpixels 110a and 110b) in the top row (1st row) and one subpixel (subpixel 110c) in the bottom row (2nd row). Pixel 124b has one subpixel (subpixel 110c) in the top row (1st row) and two subpixels (subpixels 110a and 110b) in the bottom row (2nd row).

[0307] Figure 31D shows an example where each subpixel has a roughly square top shape with rounded corners, Figure 31E shows an example where each subpixel has a circular top shape, and Figure 31F shows an example where each subpixel has a roughly hexagonal top shape with rounded corners.

[0308] Figure 31G shows an example where the subpixels of each color are arranged in a zigzag pattern. Specifically, in a top view, the upper edges of two subpixels aligned in the row direction (for example, subpixels 110a and 110b, or subpixels 110b and 110c) are offset.

[0309] In each pixel shown in Figures 31A to 31G, it is preferable, for example, that sub-pixel 110a be sub-pixel R that emits red light, sub-pixel 110b be sub-pixel G that emits green light, and sub-pixel 110c be sub-pixel B that emits blue light. However, the configuration of the sub-pixels is not limited to this, and the colors emitted by the sub-pixels and their order can be determined as appropriate. For example, sub-pixel 110b may be sub-pixel R that emits red light, and sub-pixel 110a may be sub-pixel G that emits green light.

[0310] In photolithography, the finer the pattern being processed, the more significant the effects of light diffraction become. This compromises the fidelity of the transfer of the photomask pattern through exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, patterns with rounded corners are likely to be formed. Consequently, the top surface shape of subpixels may be a polygon with rounded corners, an ellipse, or a circle.

[0311] Furthermore, in order to achieve the desired shape of the top surface of the LED layer, a technique (OPC (Optical Proximity Correction) technique) may be used to pre-correct the mask pattern so that the design pattern and the transferred pattern match. Specifically, in the OPC technique, a correction pattern is added to the corners of the shape on the mask pattern.

[0312] As shown in Figures 32A to 32I, a pixel can be configured to have four types of subpixels.

[0313] The pixels 110 shown in Figures 32A to 32C are arranged in a stripe pattern.

[0314] Figure 32A shows an example where each subpixel has a rectangular top surface shape, Figure 32B shows an example where each subpixel has a top surface shape formed by connecting two semicircles and a rectangle, and Figure 32C shows an example where each subpixel has an elliptical top surface shape.

[0315] The pixels 110 shown in Figures 32D to 32F have a matrix array applied to them.

[0316] Figure 32D shows an example where each subpixel has a square top surface shape, Figure 32E shows an example where each subpixel has a roughly square top surface shape with rounded corners, and Figure 32F shows an example where each subpixel has a circular top surface shape.

[0317] Figures 32G and 32H show an example where one pixel 110 is composed of 2 rows and 3 columns.

[0318] Pixel 110, shown in Figure 32G, has three subpixels (subpixels 110a, 110b, and 110c) in the top row (row 1) and one subpixel (subpixel 110d) in the bottom row (row 2). In other words, pixel 110 has subpixel 110a in the left column (column 1), subpixel 110b in the middle column (column 2), subpixel 110c in the right column (column 3), and subpixel 110d across these three columns.

[0319] The pixel 110 shown in Figure 32H has three subpixels (subpixels 110a, 110b, and 110c) in the top row (1st row) and three subpixels 110d in the bottom row (2nd row). In other words, the pixel 110 has subpixels 110a and 110d in the left column (1st column), subpixels 110b and 110d in the middle column (2nd column), and subpixels 110c and 110d in the right column (3rd column). As shown in Figure 32H, by aligning the arrangement of subpixels in the top row and the bottom row, it becomes possible to efficiently remove dust and other debris that may occur during the manufacturing process. Therefore, a display device with high display quality can be provided.

[0320] Figure 32I shows an example where one pixel 110 is composed of 3 rows and 2 columns.

[0321] Pixel 110, shown in Figure 32I, has a sub-pixel 110a in the top row (1st row), a sub-pixel 110b in the middle row (2nd row), a sub-pixel 110c spanning from the 1st to the 2nd row, and one sub-pixel (sub-pixel 110d) in the bottom row (3rd row). In other words, pixel 110 has sub-pixels 110a and 110b in the left column (1st column), a sub-pixel 110c in the right column (2nd column), and a sub-pixel 110d spanning these two columns.

[0322] The pixel 110 shown in Figures 32A to 32I is composed of four subpixels: subpixels 110a, 110b, 110c, and 110d.

[0323] The sub-pixels 110a, 110b, 110c, and 110d can each be configured to have light-emitting devices with different emission colors. Examples of sub-pixels 110a, 110b, 110c, and 110d include sub-pixels of four colors: R, G, B, and white (W); sub-pixels of four colors: R, G, B, and Y; or sub-pixels of R, G, B, and infrared (IR).

[0324] In each pixel 110 shown in Figures 32A to 32I, it is preferable, for example, that sub-pixel 110a be sub-pixel R that emits red light, sub-pixel 110b be sub-pixel G that emits green light, sub-pixel 110c be sub-pixel B that emits blue light, and sub-pixel 110d be sub-pixel W that emits white light, sub-pixel Y that emits yellow light, or sub-pixel that emits near-infrared light. With such a configuration, in the pixels 110 shown in Figures 32G and 32H, the layout of R, G, and B becomes a stripe arrangement, which can improve the display quality. Also, in the pixels 110 shown in Figure 32I, the layout of R, G, and B becomes a so-called S-stripe arrangement, which can improve the display quality.

[0325] As shown in Figures 32J and 32K, a pixel can be configured to have five types of subpixels.

[0326] Figure 32J shows an example where one pixel 110 is composed of 2 rows and 3 columns.

[0327] Pixel 110, shown in Figure 32J, has three subpixels (subpixels 110a, 110b, and 110c) in the top row (1st row) and two subpixels (subpixels 110d and 110e) in the bottom row (2nd row). In other words, pixel 110 has subpixels 110a and 110d in the left column (1st column), subpixel 110b in the middle column (2nd column), subpixel 110c in the right column (3rd column), and subpixel 110e extending from the 2nd to the 3rd column.

[0328] Figure 32K shows an example where one pixel 110 is composed of 3 rows and 2 columns.

[0329] Pixel 110, shown in Figure 32K, has subpixel 110a in the top row (1st row), subpixel 110b in the middle row (2nd row), subpixel 110c spanning from the 1st to the 2nd row, and two subpixels (subpixels 110d and 110e) in the bottom row (3rd row). In other words, pixel 110 has subpixels 110a, 110b, and 110d in the left column (1st column), and subpixels 110c and 110e in the right column (2nd column).

[0330] In each pixel 110 shown in Figures 32J and 32K, it is preferable, for example, that sub-pixel 110a be sub-pixel R that emits red light, sub-pixel 110b be sub-pixel G that emits green light, and sub-pixel 110c be sub-pixel B that emits blue light. With such a configuration, in the pixel 110 shown in Figure 32J, the layout of R, G, and B becomes a stripe arrangement, which can improve the display quality. Also, in the pixel 110 shown in Figure 32K, the layout of R, G, and B becomes a so-called S-stripe arrangement, which can improve the display quality.

[0331] This embodiment can be combined with other embodiments as appropriate.

[0332] (Embodiment 4) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 33 to 35.

[0333] The display device of this embodiment can be a high-definition display device. Therefore, the display device of this embodiment can be used, for example, as a display unit for information terminals (wearable devices) such as wristwatches and bracelets, and as a display unit for wearable devices that can be worn on the head, such as VR devices such as head-mounted displays (HMDs) and AR devices such as glasses.

[0334] The display device of this embodiment can be a high-resolution display device or a large-screen display device. Therefore, the display device of this embodiment can be used in electronic devices with relatively large screens, such as television equipment, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal information terminals, and audio playback devices.

[0335] <Display Module> Figure 33A shows a perspective view of the display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to display device 100A, but may be any of the display devices 100B to 100F described later.

[0336] The display module 280 has substrates 291 and 292. The display module 280 has a display unit 281. The display unit 281 is an area in the display module 280 that displays an image, and is an area in which light from each pixel provided in the pixel unit 284, which will be described later, can be seen.

[0337] Figure 33B shows a schematic perspective view illustrating the configuration of the substrate 291. On the substrate 291, a circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked. In addition, a terminal section 285 for connecting to the FPC 290 is provided in the portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 and the circuit section 282 are electrically connected by a wiring section 286, which is composed of multiple wires.

[0338] The pixel section 284 has a plurality of pixels 284a arranged in a matrix. An enlarged view of one pixel 284a is shown on the right side of Figure 33B. Various configurations described in the previous embodiment can be applied to the pixel 284a. Figure 33B shows an example where the pixel has a configuration similar to that of the pixel 110 shown in Figure 1A.

[0339] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged in a matrix.

[0340] A single pixel circuit 283a is a circuit that controls the driving of multiple elements in a single pixel 284a. A single pixel circuit 283a can be configured to have three circuits that control the light emission of a single light-emitting device. For example, a single pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (driving transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This realizes an active-matrix type display device.

[0341] The circuit section 282 has circuits for driving each pixel circuit 283a of the pixel circuit section 283. For example, it is preferable to have one or both of a gate line drive circuit and a source line drive circuit. In addition, it may have at least one of the following: an arithmetic circuit, a memory circuit, and a power supply circuit.

[0342] The FPC290 functions as wiring for supplying video signals or power potential, etc., to the circuit section 282 from an external source. An IC may also be mounted on the FPC290.

[0343] The display module 280 can be configured such that one or both of the pixel circuit section 283 and the circuit section 282 are superimposed on the lower side of the pixel section 284, thereby enabling an extremely high aperture ratio (effective display area ratio) of the display section 281. For example, the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95%, and more preferably 60% or more and 95%. Furthermore, it is possible to arrange the pixels 284a at an extremely high density, enabling an extremely high resolution of the display section 281. For example, it is preferable that the pixels 284a in the display section 281 are arranged with a resolution of 20000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and with a resolution of 20000 ppi or less, or 30000 ppi or less.

[0344] Because such a display module 280 is extremely high-resolution, it can be suitably used in VR devices such as HMDs or AR devices such as glasses. For example, even in a configuration where the display part of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display part 281, so even when the display part is magnified with lenses, pixels are not visible, and a highly immersive display can be achieved. Furthermore, the display module 280 is not limited to this and can be suitably used in electronic devices with relatively small display parts. For example, it can be suitably used in the display part of wearable electronic devices such as watches.

[0345] <Display device 100A> The display device 100A shown in Figure 34 includes a substrate 301, a light-emitting device 130, a capacitor 240, and a transistor 310.

[0346] Substrate 301 corresponds to substrate 291 in Figures 33A and 33B. The laminated structure from substrate 301 to insulating layer 255c corresponds to layer 101 containing the transistor in Embodiment 1.

[0347] The transistor 310 is a transistor having a channel-forming region in the substrate 301. The substrate 301 can be a semiconductor substrate such as a single-crystal silicon substrate. The transistor 310 has a portion of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region of the substrate 301 doped with impurities and functions as either a source or a drain. The insulating layer 314 is provided covering the side surface of the conductive layer 311.

[0348] An element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301.

[0349] An insulating layer 261 is provided covering the transistor 310, and a capacitance 240 is provided on the insulating layer 261.

[0350] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located between them. The conductive layer 241 acts as one electrode of the capacitor 240, the conductive layer 245 acts as the other electrode of the capacitor 240, and the insulating layer 243 acts as the dielectric of the capacitor 240.

[0351] The conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254. The conductive layer 241 is electrically connected to either the source or drain of the transistor 310 by a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided covering the conductive layer 241. The conductive layer 245 is provided in a region that overlaps with the conductive layer 241 via the insulating layer 243.

[0352] An insulating layer 255a is provided covering the capacitance 240, an insulating layer 255b is provided on the insulating layer 255a, and an insulating layer 255c is provided on the insulating layer 255b. A light-emitting device 130 is provided on the insulating layer 255c. Figure 34 shows an example in which the light-emitting device 130 has the laminated structure shown in Figure 1B. An insulator is provided in the region between adjacent light-emitting devices 130. Figure 34 shows a configuration in which an insulating layer 125 and a filling layer 127 on the insulating layer 125 are provided in this region.

[0353] One or more of the insulating layers 255a, 255b, and 255c may have recesses between adjacent light-emitting devices. Figure 34 shows an example in which the insulating layer 255c is provided with recesses.

[0354] The insulating layers 255a, 255b, and 255c can each suitably use various inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films. For insulating layers 255a and 255c, it is preferable to use oxide insulating films or oxidative nitride insulating films such as silicon oxide films, silicon oxidative nitride films, and aluminum oxide films. For insulating layer 255b, it is preferable to use nitride insulating films or nitride oxide insulating films such as silicon nitride films and silicon nitride oxide films. More specifically, it is preferable to use silicon oxide films for insulating layers 255a and 255c, and silicon nitride films for insulating layer 255b. It is preferable that insulating layer 255b functions as an etching protective film.

[0355] A mask layer 118 is located on the LED layer 134 of the light-emitting device 130.

[0356] The conductive layer 111 is electrically connected to either the source or drain of the transistor 310 by plugs 256 embedded in insulating layers 243, 255a, 255b, and 255c, a conductive layer 241 embedded in insulating layer 254, and plugs 271 embedded in insulating layer 261. The height of the upper surface of insulating layer 255c and the height of the upper surface of plug 256 are equal or approximately equal. Various conductive materials can be used for the plugs. Figure 34, etc., shows an example in which the pixel electrode has a two-layer structure consisting of a reflective electrode and a transparent electrode on the reflective electrode.

[0357] A protective layer 131 is provided on the light-emitting device 130. A substrate 120 is bonded to the protective layer 131 by a resin layer 122. Details of the components from the light-emitting device to the substrate 120 can be found in Embodiment 1. The substrate 120 corresponds to the substrate 292 in Figure 33A.

[0358] <Display device 100B> The display device 100B shown in Figure 35 has a configuration in which transistors 310A and 310B, each with a channel formed on a semiconductor substrate, are stacked. In the following description of the display device, parts that are the same as those described earlier may be omitted.

[0359] The display device 100B has a configuration in which a substrate 301B on which a transistor 310B, a capacitor 240, and a light-emitting device are provided, and a substrate 301A on which a transistor 310A is provided are bonded together.

[0360] Here, it is preferable to provide an insulating layer 345 on the lower surface of substrate 301B. It is also preferable to provide an insulating layer 346 on top of the insulating layer 261 provided on substrate 301A. Insulating layers 345 and 346 are insulating layers that function as protective layers and can suppress the diffusion of impurities into substrates 301B and 301A. Insulating layers 345 and 346 can be made of inorganic insulating films that can be used for protective layer 131 or insulating layer 332.

[0361] The substrate 301B is provided with a plug 343 that penetrates both the substrate 301B and the insulating layer 345. It is preferable to provide an insulating layer 344 covering the sides of the plug 343. The insulating layer 344 functions as a protective layer and can suppress the diffusion of impurities into the substrate 301B. The insulating layer 344 can be made of an inorganic insulating film that can be used for the protective layer 131.

[0362] A conductive layer 342 is provided on the back side of the substrate 301B (the side opposite to the substrate 120 side), beneath the insulating layer 345. Preferably, the conductive layer 342 is provided so as to be embedded in the insulating layer 335. Also, preferably, the undersides of the conductive layer 342 and the insulating layer 335 are flattened. Here, the conductive layer 342 is electrically connected to the plug 343.

[0363] On the other hand, the substrate 301A has a conductive layer 341 provided on an insulating layer 346. Preferably, the conductive layer 341 is provided so as to be embedded in the insulating layer 336. Furthermore, it is preferable that the upper surfaces of the conductive layer 341 and the insulating layer 336 are flattened.

[0364] The conductive layer 341 and the conductive layer 342 are bonded together, thereby electrically connecting the substrate 301A and the substrate 301B. By improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335, and the surface formed by the conductive layer 341 and the insulating layer 336, the bonding of the conductive layer 341 and the conductive layer 342 can be improved.

[0365] It is preferable that conductive layers 341 and 342 use the same conductive material. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) composed of the above elements can be used. In particular, it is preferable to use copper for conductive layers 341 and 342. This allows the application of Cu-Cu (copper-copper) direct bonding technology (a technology that achieves electrical conductivity by connecting Cu (copper) pads to each other).

[0366] <Display device 100C> The display device 100C shown in Figure 36 has a configuration in which conductive layer 341 and conductive layer 342 are joined via bumps 347.

[0367] As shown in Figure 36, the conductive layer 341 and the conductive layer 342 can be electrically connected by providing a bump 347 between them. The bump 347 can be formed using a conductive material including, for example, gold (Au), nickel (Ni), indium (In), or tin (Sn). Solder may also be used as the bump 347. An adhesive layer 348 may also be provided between the insulating layer 345 and the insulating layer 346. Furthermore, when the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may be omitted.

[0368] <Display device 100D> The display device 100D shown in Figure 37 differs from the display device 100A mainly in its transistor configuration.

[0369] Transistor 320 is an OS transistor in which a metal oxide (also called an oxide semiconductor) exhibiting semiconductor properties is applied to the semiconductor layer where the channel is formed.

[0370] The transistor 320 has a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.

[0371] Substrate 331 corresponds to substrate 291 in Figures 33A and 33B. The laminated structure from substrate 331 to insulating layer 255c corresponds to layer 101 containing the transistor in Embodiment 1. Substrate 331 can be an insulating substrate or a semiconductor substrate.

[0372] An insulating layer 332 is provided on the substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320, and prevents oxygen from detaching from the semiconductor layer 321 to the insulating layer 332. The insulating layer 332 can be made of a film that is less permeable to hydrogen or oxygen than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0373] A conductive layer 327 is provided on an insulating layer 332, and an insulating layer 326 is provided covering the conductive layer 327. The conductive layer 327 functions as the first gate electrode of the transistor 320, and a portion of the insulating layer 326 functions as the first gate insulating layer. It is preferable to use an oxide insulating film, such as a silicon oxide film, for at least the portion of the insulating layer 326 that is in contact with the semiconductor layer 321. It is preferable that the upper surface of the insulating layer 326 is flattened.

[0374] The semiconductor layer 321 is provided on the insulating layer 326. Preferably, the semiconductor layer 321 has an oxide semiconductor. A pair of conductive layers 325 are provided in contact with the semiconductor layer 321 and function as source and drain electrodes.

[0375] An insulating layer 328 is provided covering the top and side surfaces of a pair of conductive layers 325, as well as the side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided on the insulating layer 328. The insulating layer 328 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing into the semiconductor layer 321 from the insulating layer 264, etc., and to prevent oxygen from detaching from the semiconductor layer 321. The insulating layer 328 can be made of the same insulating film as the insulating layer 332.

[0376] An opening is provided in the insulating layer 328 and the insulating layer 264 that reaches the semiconductor layer 321. Inside this opening, the insulating layer 323 and the conductive layer 324 are embedded, in contact with the sides of the insulating layer 264, the insulating layer 328, and the conductive layer 325, as well as the upper surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0377] The upper surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are flattened so that their heights are the same or approximately the same, and the insulating layer 329 and insulating layer 265 are provided covering them.

[0378] Insulating layers 264 and 265 function as interlayer insulating layers. Insulating layer 329 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing from insulating layer 265 to transistor 320. Insulating layer 329 can be an insulating film similar to that used for insulating layers 328 and 332.

[0379] A plug 274, which is electrically connected to one of the pair of conductive layers 325, is provided so as to be embedded in the insulating layers 265, 329, and 264. Here, it is preferable that the plug 274 has a conductive layer 274a that covers the sides of the openings of the insulating layers 265, 329, 264, and 328, and a part of the upper surface of the conductive layer 325, and a conductive layer 274b that is in contact with the upper surface of the conductive layer 274a. In this case, it is preferable to use a conductive material that does not easily allow hydrogen and oxygen to diffuse as the conductive layer 274a.

[0380] <Display device 100E> The display device 100E shown in Figure 38 has a configuration in which transistors 320A and 320B, each having an oxide semiconductor in the semiconductor layer where the channel is formed, are stacked.

[0381] For details regarding transistors 320A and 320B, and their peripheral configurations, refer to the description relating to the display device 100D above.

[0382] In this example, we have used a configuration in which two transistors having oxide semiconductors are stacked, but this is not the only option. For example, a configuration in which three or more transistors are stacked may also be used.

[0383] <Display device 100F> The display device 100F shown in Figure 39 has a configuration in which a transistor 310 with a channel formed on a substrate 301 and a transistor 320 containing an oxide semiconductor on the semiconductor layer in which the channel is formed are stacked.

[0384] An insulating layer 261 is provided covering the transistor 310, and a conductive layer 251 is provided on the insulating layer 261. An insulating layer 262 is provided covering the conductive layer 251, and a conductive layer 252 is provided on the insulating layer 262. The conductive layers 251 and 252 each function as wiring. An insulating layer 263 and an insulating layer 332 are provided covering the conductive layer 252, and a transistor 320 is provided on the insulating layer 332. An insulating layer 265 is provided covering the transistor 320, and a capacitor 240 is provided on the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0385] Transistor 320 can be used as a transistor constituting a pixel circuit. Transistor 310 can also be used as a transistor constituting a pixel circuit, or as a transistor constituting a drive circuit (gate line drive circuit, source line drive circuit) for driving the pixel circuit. Furthermore, transistors 310 and 320 can be used as transistors constituting various circuits such as arithmetic circuits or memory circuits.

[0386] This configuration allows for the formation of not only pixel circuits but also drive circuits directly beneath the light-emitting device, making it possible to miniaturize the display device compared to cases where the drive circuits are located around the display area.

[0387] <Display device 100G> Figure 40 shows a perspective view of the display device 100G, and Figure 41A shows a cross-sectional view of the display device 100G.

[0388] The display device 100G has a configuration in which substrate 152 and substrate 151 are bonded together. In Figure 40, substrate 152 is shown with a dashed line.

[0389] The display device 100G includes a display unit 162, a connection unit 140, a circuit 164, wiring 165, etc. Figure 40 shows an example in which IC 173 and FPC 172 are mounted on the display device 100G. Therefore, the configuration shown in Figure 40 can also be described as a display module having the display device 100G, an IC (integrated circuit), and an FPC.

[0390] The connection portion 140 is provided on the outside of the display portion 162. The connection portion 140 can be provided along one or more sides of the display portion 162. There may be one or more connection portions 140. Figure 40 shows an example in which the connection portion 140 is provided so as to surround all four sides of the display portion. At the connection portion 140, the common electrode of the light-emitting device and the conductive layer are electrically connected, and a potential can be supplied to the common electrode.

[0391] For example, a scan line drive circuit can be used as circuit 164.

[0392] Wiring 165 has the function of supplying signals and power to the display unit 162 and the circuit 164. These signals and power are input to wiring 165 from an external source via FPC 172 or from IC 173.

[0393] Figure 40 shows an example in which IC 173 is provided on the substrate 151 using the COG (Chip On Glass) method or COF (Chip on Film) method, etc. IC 173 can be an IC having, for example, a scan line drive circuit or a signal line drive circuit. Note that the display device 100G and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC using the COF method, etc.

[0394] Figure 41A shows an example of a cross-section of the display device 100G when a portion of the area including the FPC 172, a portion of the circuit 164, a portion of the display unit 162, a portion of the connection portion 140, and a portion of the area including the end portion are cut.

[0395] The display device 100G shown in Figure 41A has transistors 201, 205, and a light-emitting device 130, etc., between substrates 151 and 152.

[0396] The light-emitting device 130 has a configuration similar to the stacked structure shown in Figure 1B, except that the pixel electrode configuration is different. For details of the light-emitting device, please refer to Embodiment 1.

[0397] The light-emitting device 130 has a conductive layer 112, a conductive layer 126 on the conductive layer 112, and a conductive layer 129 on the conductive layer 126. The conductive layer 112, the conductive layer 126, and the conductive layer 129 can be collectively called pixel electrodes, or parts of them can be called pixel electrodes.

[0398] The conductive layer 112 is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. The edge of the conductive layer 126 is located outside the edge of the conductive layer 112. The edges of the conductive layer 126 and the conductive layer 129 are aligned or approximately aligned. For example, conductive layers that function as reflective electrodes can be used for conductive layers 112 and 126, and a conductive layer that functions as a transparent electrode can be used for conductive layer 129.

[0399] The conductive layer 112 is formed to cover the openings provided in the insulating layer 214. Layer 128 is embedded in the recesses of the conductive layer 112.

[0400] Layer 128 has the function of flattening the recesses of the conductive layer 112. A conductive layer 126 is provided on the conductive layer 112 and layer 128, which is electrically connected to the conductive layer 112. Therefore, the region that overlaps with the recesses of the conductive layer 112 can also be used as a light-emitting region, and the aperture ratio of the pixel can be increased.

[0401] Layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used for layer 128 as appropriate. In particular, it is preferable that layer 128 be formed using an insulating material, and especially preferable that it be formed using an organic insulating material. For example, an organic insulating material that can be used for the aforementioned filling layer 127 can be applied to layer 128.

[0402] Figure 41A shows an example where the upper surface of layer 128 has a flat portion, but the shape of layer 128 is not particularly limited. The upper surface of layer 128 can have a shape in which the center and its vicinity are recessed in a cross-sectional view, that is, a shape having a concave curved surface. Alternatively, the upper surface of layer 128 can have a shape in which the center and its vicinity are bulging in a cross-sectional view, that is, a shape having a convex curved surface. Alternatively, the upper surface of layer 128 may have one or both a convex curved surface and a concave curved surface. Furthermore, the number of convex and concave curved surfaces on the upper surface of layer 128 is not limited and can be one or more.

[0403] The height of the top surface of layer 128 and the height of the top surface of the conductive layer 112 may be the same or approximately the same, or they may be different. For example, the height of the top surface of layer 128 may be lower or higher than the height of the top surface of the conductive layer 112.

[0404] The edges of the conductive layer 126, conductive layer 129, and LED layer 134 are aligned or approximately aligned. Therefore, the entire region where the conductive layer 126 is provided can be used as the light-emitting region of the light-emitting device 130, thereby increasing the aperture ratio of the pixels.

[0405] A portion of the top surface and sides of the LED layer 134 are covered by an insulating layer 125 and a filler layer 127. A mask layer 118 is located between the LED layer 134 and the insulating layer 125. A conductive layer 115 is provided on the LED layer 134, the insulating layer 125, and the filler layer 127. Each conductive layer 115 is a continuous film provided in common to multiple light-emitting devices.

[0406] A protective layer 131 is provided on the light-emitting device 130. The protective layer 131 and the substrate 152 are bonded together via an adhesive layer 142. A light-shielding layer 117 is provided on the substrate 152. For sealing the light-emitting device, a solid sealing structure or a hollow sealing structure can be applied. In Figure 41A, the space between the substrate 152 and the substrate 151 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Furthermore, the space may be filled with a resin different from the adhesive layer 142, which is provided in a frame shape.

[0407] In the connection portion 140, a conductive layer 123 is provided on the insulating layer 214. The conductive layer 123 is shown as an example of a laminated structure consisting of a conductive film obtained by processing the same conductive film as conductive layer 112, a conductive film obtained by processing the same conductive film as conductive layer 126, and a conductive film obtained by processing the same conductive film as conductive layer 129. The edges of the conductive layer 123 are covered by a mask layer 118, an insulating layer 125, and a filling layer 127. A conductive layer 115 is also provided on the conductive layer 123. In the connection portion 140, the conductive layer 123 and the conductive layer 115 are in direct contact and electrically connected.

[0408] The display device 100G is a top-emission type. The light emitted by the light-emitting device is emitted towards the substrate 152. It is preferable to use a material with high transmittance to visible light for the substrate 152. The pixel electrodes contain a light-reflecting material, and the counter electrodes (conductive layer 115) contain a light-transmitting material.

[0409] The laminated structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 containing the transistor shown in the previous embodiment.

[0410] Both transistors 201 and 205 are formed on the substrate 151. These transistors can be manufactured using the same materials and the same process.

[0411] On the substrate 151, insulating layers 211, 213, 215, and 214 are provided in this order. A portion of insulating layer 211 functions as a gate insulating layer for each transistor. A portion of insulating layer 213 functions as a gate insulating layer for each transistor. Insulating layer 215 is provided covering the transistors. Insulating layer 214 is provided covering the transistors and functions as a planarization layer. The number of gate insulating layers and insulating layers covering the transistors are not limited and may be a single layer or two or more layers, respectively.

[0412] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0413] Insulating layers 211, 213, and 215 are preferably made of inorganic insulating films. Examples of inorganic insulating films that can be used include silicon nitride, silicon oxide nitride, silicon oxide, silicon nitride, aluminum oxide, and aluminum nitride. Alternatively, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, and neodymium oxide may also be used. Furthermore, two or more of the above insulating films may be laminated together.

[0414] An organic insulating layer is preferred for the insulating layer 214, which functions as a planarizing layer. Examples of materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This makes it possible to suppress the formation of depressions in the insulating layer 214 during processing of the conductive layer 112, conductive layer 126, or conductive layer 129. Alternatively, depressions may be provided in the insulating layer 214 during processing of the conductive layer 112, conductive layer 126, or conductive layer 129.

[0415] Transistors 201 and 205 have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as source and drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0416] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0417] Transistors 201 and 205 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0418] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with crystalline regions in part) may be used. Using a crystalline semiconductor is preferable because it can suppress the degradation of transistor characteristics.

[0419] The semiconductor layer of the transistor preferably has an oxide semiconductor. In other words, the display device of this embodiment preferably uses an OS transistor.

[0420] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0421] Alternatively, a transistor using silicon as the channel-forming region (Si transistor) may be used. Examples of silicon include single-crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low-temperature polysilicon (LTPS (Low Temperature Poly Silicon)) in the semiconductor layer (hereinafter also referred to as an LTPS transistor) can be used. LTPS transistors have high field-effect mobility and good frequency characteristics.

[0422] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (e.g., source driver circuits) can be fabricated on the same board as the display unit. This simplifies the external circuits implemented in the display device, reducing component and mounting costs.

[0423] OS transistors have extremely high field-effect mobility compared to transistors using amorphous silicon. Furthermore, OS transistors exhibit remarkably low source-drain leakage current (also called off-current) in the off state, allowing them to retain charge stored in a capacitor connected in series with the transistor for extended periods. Additionally, the application of OS transistors can reduce the power consumption of display devices.

[0424] To increase the luminescence brightness of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the device. To achieve this, the source-drain voltage of the drive transistor included in the pixel circuit must be increased. Compared to Si transistors, OS transistors have a higher breakdown voltage between the source and drain, allowing a higher voltage to be applied to the source-drain of an OS transistor. Therefore, by using an OS transistor as the drive transistor in the pixel circuit, the amount of current flowing through the light-emitting device can be increased, thereby increasing the luminescence brightness of the device.

[0425] When a transistor operates in the saturation region, an OS transistor exhibits a smaller change in source-drain current in response to a change in gate-source voltage than a Si transistor. Therefore, by using an OS transistor as the driving transistor in a pixel circuit, the current flowing between the source and drain can be precisely controlled by the change in gate-source voltage, thereby allowing control of the current flowing to the light-emitting device. This allows for an increase in the number of grayscale levels in the pixel circuit.

[0426] In terms of the saturation characteristics of the current flowing when a transistor operates in the saturation region, OS transistors can supply a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using OS transistors as driving transistors, a stable current can be supplied to the light-emitting device even if there are variations in the current-voltage characteristics of the EL device. In other words, when operating in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminescence brightness of the light-emitting device.

[0427] As described above, by using OS transistors in the drive transistors included in the pixel circuit, it is possible to achieve "suppression of black level floating," "increase in luminescence brightness," "multi-gradation," and "suppression of variations in light-emitting devices."

[0428] The metal oxide used in the semiconductor layer preferably contains, for example, indium, element M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, element M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0429] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also written as IGZO) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also written as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also written as IAGZO).

[0430] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is greater than or equal to the atomic ratio of M. Possible atomic ratios of metal elements in such an In-M-Zn oxide include: In:M:Zn=1:1:1 or near that composition, In:M:Zn=1:1:1.2 or near that composition, In:M:Zn=1:3:2 or near that composition, In:M:Zn=1:3:4 or near that composition, In:M:Zn=2:1:3 or near that composition, In:M:Zn=3:1:2 or near that composition, and In:M:Zn=4:2:3 Examples include compositions near the desired atomic ratio, such as In:M:Zn=4:2:4.1 or near that ratio, In:M:Zn=5:1:3 or near that ratio, In:M:Zn=5:1:6 or near that ratio, In:M:Zn=5:1:7 or near that ratio, In:M:Zn=5:1:8 or near that ratio, In:M:Zn=6:1:6 or near that ratio, In:M:Zn=5:2:5 or near that ratio, etc. Note that "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0431] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar ratio, it includes cases where, when In is set to 4, Ga is between 1 and 3, and Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar ratio, it includes cases where, when In is set to 5, Ga is greater than 0.1 and 2 or less, and Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar ratio, it includes cases where, when In is set to 1, Ga is greater than 0.1 and 2 or less, and Zn is greater than 0.1 and 2 or less.

[0432] The transistors in circuit 164 and the transistors in display unit 162 may have the same structure or different structures. The structures of the multiple transistors in circuit 164 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in display unit 162 may all be the same or there may be two or more different structures.

[0433] All of the transistors in the display unit 162 may be OS transistors, all of the transistors in the display unit 162 may be Si transistors, or some of the transistors in the display unit 162 may be OS transistors and the rest may be Si transistors.

[0434] For example, by using both LTPS transistors and OS transistors in the display unit 162, a display device with low power consumption and high driving capability can be realized. Furthermore, a configuration combining LTPS transistors and OS transistors is sometimes referred to as LTPO. A more suitable example is a configuration in which OS transistors are used for transistors that function as switches to control conduction and non-conduction between wires, and LTPS transistors are used for transistors that control current.

[0435] For example, one of the transistors in the display unit 162 functions as a transistor for controlling the current flowing to the light-emitting device, and can also be called a drive transistor. One of the source and drain of the drive transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor for this drive transistor. This makes it possible to increase the current flowing to the light-emitting device in the pixel circuit.

[0436] On the other hand, the other transistor in the display unit 162 functions as a switch for controlling the selection and deselection of pixels, and can also be called a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the source line (signal line). It is preferable to use an OS transistor for the selection transistor. This makes it possible to maintain the gradation of pixels even when the frame frequency is significantly reduced (e.g., 1 fps or less), and thus power consumption can be reduced by stopping the driver when displaying still images.

[0437] Thus, a display device according to one aspect of the present invention can combine a high aperture ratio, high resolution, high display quality, and low power consumption.

[0438] As described above, a display device according to one aspect of the present invention can reduce the leakage current that can flow through transistors and the leakage current that can flow between adjacent light-emitting devices (also called lateral leakage current or side leakage current). Furthermore, when an image is displayed on the display device, the observer can observe one or more of the following: image sharpness, image clarity, high saturation, and high contrast ratio. Moreover, by configuring the device to have extremely low leakage currents in transistors and lateral leakage currents between light-emitting devices, it is possible to achieve a display with minimal light leakage (so-called black level floating) that may occur when displaying black.

[0439] Figures 41B and 41C show other examples of transistor configurations.

[0440] Transistors 209 and 210 each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer 231 having a channel forming region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel forming region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel forming region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0441] In the transistor 209 shown in Figure 41B, an example is shown where the insulating layer 225 covers the top and sides of the semiconductor layer 231. The conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively. Of the conductive layers 222a and 222b, one functions as the source and the other as the drain.

[0442] On the other hand, in the transistor 210 shown in Figure 41C, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the structure shown in Figure 41C can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In Figure 41C, an insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and conductive layer 222b are connected to the low-resistance region 231n, respectively, through openings in the insulating layer 215.

[0443] A connection portion 204 is provided in the region of substrate 151 where substrate 152 does not overlap. At the connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. The conductive layer 166 is shown as an example of a laminated structure consisting of a conductive film obtained by processing the same conductive film as conductive layer 112, a conductive film obtained by processing the same conductive film as conductive layer 126, and a conductive film obtained by processing the same conductive film as conductive layer 129. The conductive layer 166 is exposed on the upper surface of the connection portion 204. This allows the connection portion 204 and FPC 172 to be electrically connected via the connection layer 242.

[0444] It is preferable to provide a light-shielding layer 117 on the surface of the substrate 152 that faces the substrate 151. The light-shielding layer 117 can be provided between adjacent light-emitting devices, at connection points 140, and in circuits 164, etc. In addition, various optical components can be arranged on the outside of the substrate 152.

[0445] Substrates 151 and 152 can each be made of the same material used for substrate 120.

[0446] The adhesive layer 142 can be made of a material that can be used for the resin layer 122.

[0447] The connecting layer 242 can be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0448] <Display device 100H> The display device 100H shown in Figure 42 has a laminate of a support substrate 745, an adhesive layer 742, a resin layer 743, and an insulating layer 744, instead of the substrate 151 shown in Figure 41, and has a protective layer 740 instead of the substrate 152. Transistors 205 and the like are provided on the insulating layer 744 which is provided on the resin layer 743.

[0449] The support substrate 745 is a substrate containing an organic resin or glass, and is thin enough to be flexible. The resin layer 743 is a layer containing an organic resin such as polyimide resin or acrylic resin. The insulating layer 744 contains an inorganic insulating film such as silicon oxide, silicon oxynitride, or silicon nitride. The resin layer 743 and the support substrate 745 are bonded together by an adhesive layer 742. It is preferable that the resin layer 743 is thinner than the support substrate 745.

[0450] The protective layer 131 and the protective layer 740 are bonded together by an adhesive layer 142. The protective layer 740 can be a glass substrate or a resin film. As the protective layer 740, an optical component such as a polarizing plate or a scattering plate, an input device such as a touch sensor panel, or a configuration in which two or more of these are laminated together may be applied.

[0451] The display device 100H can be suitably used as a flexible display. Figure 43 shows the display device 100H in a curved state. Although Figure 43 shows the display device curved convexly toward the light-emitting surface (in this case, the protective layer 740), the present invention is not limited to this. It may be curved concavely toward the light-emitting surface. Alternatively, it may have a region that is curved convexly toward the light-emitting surface and a region that is curved concavely toward the light-emitting surface.

[0452] As shown in Figures 42 and 43, the support substrate 745 and the adhesive layer 742 may be absent, and a region P2 may be absent. By omitting the support substrate 745 in region P2, it can be bent with an extremely small radius of curvature. For example, by folding the region P2 to the back, the FPC 172 can be placed on top of the back of the display unit 162. This makes it possible to miniaturize the electronic device on which the display device 100H is mounted.

[0453] Region P2 may be configured without an inorganic insulating film such as the insulating layer 744. By minimizing the amount of inorganic insulating film in region P2 and laminating only a conductive layer containing metal or alloy and a layer containing organic material, it is possible to prevent cracks from forming when the material is bent.

[0454] At connection point 204, the wiring 760 is electrically connected to the FPC 172 via connection layer 144, conductive layer 132, and connection layer 242. The wiring 760 is shown as an example of a laminated structure consisting of a conductive film obtained by processing the same conductive film as conductive layer 112, a conductive film obtained by processing the same conductive film as conductive layer 126, and a conductive film obtained by processing the same conductive film as conductive layer 129. The wiring 760 is electrically connected to transistor 201.

[0455] This embodiment can be combined with other embodiments as appropriate.

[0456] (Embodiment 5) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 44 to 46.

[0457] The electronic device of this embodiment has a display device according to one aspect of the present invention in its display unit. The display device according to one aspect of the present invention is easily made high-definition and high-resolution. Therefore, it can be used in the display units of various electronic devices.

[0458] Examples of electronic devices include television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as other electronic devices with relatively large screens, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0459] In particular, a display device according to one aspect of the present invention can be used suitably in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), as well as wearable devices that can be worn on the head, such as VR devices such as head-mounted displays, AR devices such as glasses, and MR devices.

[0460] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels). In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (resolution) of the display device according to one aspect of the present invention is preferably 100 ppi or more, more preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device that has either high resolution or high detail, or both, it becomes possible to further enhance the sense of presence and depth in personal electronic devices such as portable or home-use devices. Furthermore, there are no particular limitations on the screen ratio (aspect ratio) of the display device according to one embodiment of the present invention. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0461] The electronic device of this embodiment may have sensors (including those with the function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0462] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0463] Figures 44A to 44D illustrate an example of a wearable device that can be worn on the head. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device that has the function to display at least one of the following content types, such as AR, VR, SR, and MR, it is possible to enhance the user's sense of immersion.

[0464] The electronic device 700A shown in Figure 44A and the electronic device 700B shown in Figure 44B each include a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0465] A display device according to one aspect of the present invention can be applied to the display panel 751. Therefore, an electronic device capable of displaying extremely high resolution can be created.

[0466] Electronic devices 700A and 700B can project an image displayed on the display panel 751 onto the display area 756 of the optical element 753. Because the optical element 753 is translucent, the user can see the image displayed on the display area superimposed on the transmitted image visible through the optical element 753. Therefore, electronic devices 700A and 700B are electronic devices capable of AR display.

[0467] Electronic devices 700A and 700B may be equipped with cameras capable of capturing images of the area in front of them as imaging units. Furthermore, electronic devices 700A and 700B may each be equipped with acceleration sensors such as gyro sensors to detect the orientation of the user's head and display an image corresponding to that orientation in the display area 756.

[0468] The communications unit has a wireless communication device, which can supply video signals and the like. Alternatively, instead of the wireless communication device, or in addition to the wireless communication device, it may be equipped with a connector to which a cable supplying video signals and power potential can be connected.

[0469] Electronic devices 700A and 700B are equipped with batteries that can be charged wirelessly, wired, or both.

[0470] The housing 721 may be equipped with a touch sensor module. The touch sensor module has the function of detecting when the outer surface of the housing 721 is touched. The touch sensor module can detect the user's tap or slide operations and perform various processes. For example, a tap operation can be used to pause or resume the video, and a slide operation can be used to fast forward or rewind. Furthermore, by providing a touch sensor module in each of the two housings 721, the range of operations can be expanded.

[0471] Various types of touch sensors can be applied to the touch sensor module. For example, various methods such as capacitive, resistive, infrared, electromagnetic induction, surface acoustic wave, and optical sensors can be used. In particular, it is preferable to apply a capacitive or optical sensor to the touch sensor module.

[0472] When using an optical touch sensor, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light-receiving device. The active layer of the photoelectric conversion device can be made of either an inorganic semiconductor or an organic semiconductor, or both.

[0473] The electronic device 800A shown in Figure 44C and the electronic device 800B shown in Figure 44D each include a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0474] A display device according to one embodiment of the present invention can be applied to the display unit 820. Therefore, an electronic device capable of displaying extremely high resolution can be created. This allows the user to experience a high level of immersion.

[0475] The display unit 820 is located inside the housing 821, in a position where it can be seen through the lens 832. Furthermore, by displaying different images on a pair of display units 820, a three-dimensional display using parallax can also be performed.

[0476] Electronic devices 800A and 800B can be described as electronic devices for VR. A user wearing either electronic device 800A or electronic device 800B can view the image displayed on the display unit 820 through the lens 832.

[0477] It is preferable that electronic devices 800A and 800B each have a mechanism that allows adjustment of the left and right positions of the lens 832 and the display unit 820 so that they are in the optimal position according to the user's eye position. It is also preferable that they have a mechanism that adjusts the focus by changing the distance between the lens 832 and the display unit 820.

[0478] The attachment portion 823 allows the user to attach the electronic device 800A or 800B to their head. While the attachment portion 823 is exemplified in Figure 44C and other figures as resembling the temples (or arms) of eyeglasses, it is not limited to this shape. The attachment portion 823 only needs to be wearable by the user; for example, it may be helmet-shaped or band-shaped.

[0479] The imaging unit 825 has the function of acquiring external information. The data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used in the imaging unit 825. In addition, multiple cameras may be provided to accommodate multiple angles of view, such as telephoto and wide-angle.

[0480] Although an example with an imaging unit 825 is shown here, any distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object can be provided. In other words, the imaging unit 825 is one form of the detection unit. The detection unit can use, for example, an image sensor or a distance image sensor such as LiDAR (Light Detection and Ranging). By using the image obtained by the camera and the image obtained by the distance image sensor, more information can be acquired, enabling more accurate gesture control.

[0481] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, housing 821, and mounting unit 823. This allows users to enjoy video and audio simply by wearing the electronic device 800A, without needing separate audio equipment such as headphones, earphones, or speakers.

[0482] Electronic devices 800A and 800B may each have input terminals. Cables can be connected to the input terminals to supply video signals from video output devices, etc., and power for charging batteries provided within the electronic devices.

[0483] An electronic device according to one aspect of the present invention may have a function for wireless communication with an earphone 750. The earphone 750 has a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., voice data) from the electronic device through its wireless communication function. For example, the electronic device 700A shown in Figure 44A has a function for transmitting information to the earphone 750 through its wireless communication function. Also, for example, the electronic device 800A shown in Figure 44C has a function for transmitting information to the earphone 750 through its wireless communication function.

[0484] The electronic device may have an earphone section. The electronic device 700B shown in Figure 44B has an earphone section 727. For example, the earphone section 727 and the control section can be connected to each other by a wire. Part of the wiring connecting the earphone section 727 and the control section may be located inside the housing 721 or the mounting section 723.

[0485] Similarly, the electronic device 800B shown in Figure 44D has an earphone unit 827. For example, the earphone unit 827 and the control unit 824 can be connected to each other by a wire. Part of the wiring connecting the earphone unit 827 and the control unit 824 may be located inside the housing 821 or the mounting unit 823. Also, the earphone unit 827 and the mounting unit 823 may have magnets. This allows the earphone unit 827 to be fixed to the mounting unit 823 by magnetic force, which is preferable as it facilitates storage.

[0486] Furthermore, the electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have an audio input terminal and / or an audio input mechanism. For example, a sound-collecting device such as a microphone can be used as the audio input mechanism. By having an audio input mechanism, the electronic device may be given the function of a so-called headset.

[0487] Thus, in one embodiment of the present invention, electronic devices are preferably of the glasses type (electronic devices 700A and 700B, etc.) or the goggle type (electronic devices 800A and 800B, etc.).

[0488] An electronic device according to one aspect of the present invention can transmit information to earphones by wire or wireless means.

[0489] The electronic device 6500 shown in Figure 45A is a portable information terminal that can be used as a smartphone.

[0490] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0491] A display device according to one embodiment of the present invention can be applied to the display unit 6502.

[0492] Figure 45B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0493] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0494] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0495] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0496] A flexible display according to one embodiment of the present invention can be applied to the display panel 6511. This makes it possible to realize an extremely lightweight electronic device. Furthermore, because the display panel 6511 is extremely thin, it is possible to incorporate a large-capacity battery 6518 while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, it is possible to realize an electronic device with a narrow bezel.

[0497] Figure 45C shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown supported by a stand 7103.

[0498] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0499] The television device 7100 shown in Figure 45C can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0500] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0501] Figure 45D shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0502] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0503] Figures 45E and 45F show examples of digital signage.

[0504] The digital signage 7300 shown in Figure 45E includes a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may include LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0505] Figure 45F shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0506] In Figures 45E and 45F, a display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0507] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0508] Applying a touch panel to the display unit 7000 is preferable because it not only allows images or videos to be displayed on the display unit 7000, but also enables intuitive operation by the user. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0509] As shown in Figures 45E and 45F, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411, such as a smartphone, owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. In addition, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0510] The digital signage 7300 or digital signage 7400 can also be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows an unspecified number of users to participate in and enjoy the game simultaneously.

[0511] The electronic equipment shown in Figures 46A to 46G includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, sensors 9007 (including functions for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0512] The electronic devices shown in Figures 46A to 46G have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0513] Details of the electronic equipment shown in Figures 46A to 46G will be explained below.

[0514] Figure 46A is a perspective view showing a personal digital assistant (PDA) 9101. The PDA 9101 can be used, for example, as a smartphone. The PDA 9101 may also be equipped with a speaker 9003, connection terminals 9006, sensors 9007, etc. The PDA 9101 can also display text and image information on multiple surfaces. Figure 46A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the subject of an email or SNS message, the sender's name, date and time, time, battery level, signal strength, etc. Alternatively, icons 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0515] Figure 46B is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PDA 9102, while the PDA 9102 is stored in the breast pocket of their clothing. The user can check the display without taking the PDA 9102 out of their pocket and decide, for example, whether or not to answer a call.

[0516] Figure 46C is a perspective view showing the tablet terminal 9103. The tablet terminal 9103 can run various applications, such as mobile phone calls, email, document viewing and creation, music playback, internet communication, and computer games. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the housing 9000. The left side of the housing 9000 has operation keys 9005 as buttons for operation, and the bottom has connection terminals 9006.

[0517] Figure 46D is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also make hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via a connection terminal 9006. Charging may be performed by wireless power supply.

[0518] Figures 46E to 46G are perspective views showing a foldable personal information terminal 9201. Figure 46E shows the personal information terminal 9201 in an unfolded state, Figure 46G shows it in a folded state, and Figure 46F shows a perspective view of the state in between Figures 46E and 46G. The personal information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the personal information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0519] This embodiment can be combined with other embodiments as appropriate. [Explanation of Symbols]

[0520] 100A: Display device, 100B: Display device, 100C: Display device, 100D: Display device, 100E: Display device, 100F: Display device, 100G: Display device, 100H: Display device, 100: Display device, 101: Layer, 105: Transistor, 107a: Coloring layer, 107b: Coloring layer, 107c: Coloring layer, 107: Coloring layer, 109: Color conversion layer, 110a: Sub-pixel, 110b: Sub-pixel, 110c: Sub-pixel, 110d: Sub-pixel, 110e: Sub-pixel, 110: Pixel, 111f: Conductive film, 111: Conductive layer, 112: Conductive layer, 115: Conductive layer, 116: Connecting layer, 117: Light-shielding layer ,118A: Mask layer, 118f: Mask film, 118: Mask layer, 120a: Substrate, 120: Substrate, 121: Reflective layer, 122a: Adhesive layer, 122: Resin layer, 123: Conductive layer, 124a: Pixel, 124b: Pixel, 125f: Insulating film, 125: Insulating layer, 126: Conductive layer, 127f: Filling film, 127: Filling layer, 128: Layer, 129: Conductive layer, 130: Light-emitting device, 131: Protective layer, 132f: Conductive film, 132: Conductive layer, 133: Lens, 134f: LED film, 134: LED layer, 135: Light-shielding layer, 136: LED chip, 137: Conductive layer, 138: Connection layer, 13 9: Substrate, 140: Connection part, 142: Adhesive layer, 144: Connection layer, 151: Substrate, 152: Substrate, 162: Display part, 164: Circuit, 165: Wiring, 166: Conductive layer, 172: FPC, 173: IC, 180: Substrate, 182f: Semiconductor film, 182: Semiconductor layer, 184f: Light-emitting film, 184: Light-emitting layer, 186f: Semiconductor film, 186: Semiconductor layer, 188: LED substrate, 190A: Resist mask, 190B: Resist mask, 201: Transistor, 204: Connection part, 205: Transistor, 209: Transistor, 210: Transistor, 211: Insulating layer, 213: Insulating layer, 214: Insulating layer, 215: Insulating layer, 218: Insulating layer, 221: Conductive layer, 222a: Conductive layer, 222b: Conductive layer, 223: Conductive layer, 225: Insulating layer, 231i: Channel formation region, 231n: Low resistance region, 231: Semiconductor layer, 240: Capacitance, 241: Conductive layer, 242: Connecting layer, 243: Insulating layer, 245: Conductive layer, 251: Conductive layer, 252: Conductive layer, 254: Insulating layer, 255a: Insulating layer, 255b: Insulating layer, 255c: Insulating layer, 256: Plug, 261: Insulating layer, 262: Insulating layer, 263: Insulating layer, 264: Insulating layer, 265: Insulating layer, 271: Plug,274a: Conductive layer, 274b: Conductive layer, 274: Plug, 280: Display module, 281: Display section, 282: Circuit section, 283a: Pixel circuit, 283: Pixel circuit section, 284a: Pixel, 284: Pixel section, 285: Terminal section, 286: Wiring section, 290: FPC, 291: Substrate, 292: Substrate, 301A: Substrate, 301B: Substrate, 301: Substrate, 310A: Transistor, 310B: Transistor, 310: Transistor, 311: Conductive layer, 312: Low resistance region, 313: Insulating layer, 314: Insulating layer, 315: Element isolation layer, 320A: Transistor, 320B: Transistor 320: Transistor, 321: Semiconductor layer, 323: Insulating layer, 324: Conductive layer, 325: Conductive layer, 326: Insulating layer, 327: Conductive layer, 328: Insulating layer, 329: Insulating layer, 331: Substrate, 332: Insulating layer, 335: Insulating layer, 336: Insulating layer, 341: Conductive layer, 342: Conductive layer, 343: Plug, 344: Insulating layer, 345: Insulating layer, 346: Insulating layer, 347: Bump, 348: Adhesive layer, 700A: Electronic equipment, 700B: Electronic equipment, 721: Housing, 723: Mounting part, 727: Earphone part, 740: Protective layer, 742: Adhesive layer, 743: Resin layer, 744 :Insulating layer, 745:Support substrate, 750:Earphone, 751:Display panel, 753:Optical component, 756:Display area, 757:Frame, 758:Nose pad, 760:Wiring, 800A:Electronic equipment, 800B:Electronic equipment, 820:Display unit, 821:Housing, 822:Communication unit, 823:Mounting unit, 824:Control unit, 825:Imaging unit, 827:Earphone unit, 832:Lens, 6500:Electronic equipment, 6501:Housing, 6502:Display unit, 6503:Power button, 6504:Button, 6505:Speaker, 6506:Microphone, 6507:Camera, 6508:Light source, 651 0: Protective component, 6511: Display panel, 6512: Optical component, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television equipment, 7101: Enclosure, 7103: Stand, 7111: Remote control unit, 7200: Notebook personal computer, 7211: Enclosure, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Enclosure, 7303: Speaker, 7311: Information terminal,7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Enclosure, 9001: Display unit, 9002: Camera, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9103: Tablet terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

[Claim 1] It comprises a first light-emitting device, a second light-emitting device, a first insulating layer, and a filling layer. The first light-emitting device comprises a first electrode, a first semiconductor layer on the first electrode, and a common electrode on the first semiconductor layer. The second light-emitting device comprises a second electrode, a second semiconductor layer on the second electrode, and the common electrode on the second semiconductor layer. The first insulating layer has a region that is in contact with the side surface of the first semiconductor layer and the side surface of the second semiconductor layer. The packed layer has a region that overlaps with the side surface of the first semiconductor layer and the side surface of the second semiconductor layer via the first insulating layer. The common electrode is a display device having a region in contact with the upper surface of the packed layer.

Images