Resin-encapsulated semiconductor device, electrical equipment, and method for manufacturing the same

Abstract

The present invention provides a resin-sealed semiconductor device with low thermal resistance, comprising a lead frame including a die pad, a semiconductor element placed on the upper surface of the die pad, and a molding resin that resin-encapsulates the semiconductor element, which has support pin marks and sleeve marks formed on it. [Solution] A resin-sealed semiconductor device comprising a lead frame including a die pad, a semiconductor element mounted on the upper surface of the die pad, and a mold resin for resin-sealing the semiconductor element, wherein the resin-sealed semiconductor device comprises support pin marks formed in the mold resin after removing support pins that slide from a sleeve installed in a mold for forming the mold resin and support the die pad from the back surface of the mounting surface of the semiconductor element, and sleeve marks formed in the mold resin by the sleeve, wherein the support pin marks are formed almost directly below the semiconductor element, and the sleeve marks provided outside the support pin marks have a shape that matches the heat diffusion range.

Description

[Technical Field]

[0001] The present disclosure relates to a resin-encapsulated semiconductor device, an electric apparatus, and a method for manufacturing the same. [Background Art]

[0002] Heat generated from a semiconductor element of a resin-encapsulated semiconductor device is dissipated via the resin. Resin has higher thermal resistance and lower heat dissipation than metallic materials. For this reason, reducing thermal resistance is one of the requirements for resin-encapsulated semiconductor devices.

[0003] Generally, as methods for reducing thermal resistance, four methods are cited: (1) reducing the thickness of a heat dissipation material, (2) increasing the area of a heat dissipation material, (3) using a heat dissipation material with high thermal conductivity, and (4) reducing contact thermal resistance.

[0004] Patent Document 1 discloses a method for manufacturing a resin-packaged semiconductor device, which involves controlling the thickness of the resin directly beneath the heat spreader (described as an insulating layer in Patent Document 1) by bonding a power semiconductor chip to the surface of a die pad on a lead frame, bonding a heat spreader to the back surface of the die pad, and sealing at least the die pad, the power semiconductor chip, and the heat spreader within a resin package formed by heat curing resin injected into the cavity of a molding die. In this manufacturing method, prior to injecting the resin, the tip of a movable pin, which is longer than the bush and slidably disposed in the through-hole of a bush that is inserted into a through-hole formed in the lower part of the molding die and whose end face protrudes into the cavity from the lower surface of the cavity by a predetermined length, is made to protrude from the lower surface of the cavity into the cavity by the thickness of the insulating layer to be formed directly below the heat spreader by the resin, thereby supporting the bottom surface of the heat spreader with the tip of the movable pin, and then the resin is injected into the cavity, and while the resin is in an uncured state, the tip of the movable pin is retracted so that it protrudes from the lower surface of the cavity into the cavity by a predetermined amount, thereby injecting the resin between the tip of the movable pin and the bottom surface of the heat spreader. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2003-124242 [Overview of the project] [Problems that the invention aims to solve]

[0006] However, in Patent Document 1, the support pin marks are located directly beneath the heat spreader and not directly beneath the semiconductor element. Therefore, the thickness of the resin directly beneath the semiconductor element, which is the heat source of the semiconductor device, is not reduced, and the effect of reducing thermal resistance is considered to be small. Furthermore, judging from Figures 2 and 6 of the embodiment in Patent Document 1, the range of the sleeve marks (described as bush marks in Patent Document 1) is only slightly larger than the range of the support pin marks (described as movable pin marks in Patent Document 1), and it appears that the area where the resin thickness is thin is limited to only the vicinity of the support pin marks.

[0007] Therefore, in the conventional resin-encapsulated semiconductor device 110 shown in Figure 10, as in Patent Document 1, the support pin marks 15 are formed at the center of the die pad rather than directly beneath the semiconductor element 13, raising concerns that the effect of reducing thermal resistance directly beneath the heat source is small. Furthermore, since the sleeve marks 16 are only slightly larger than the support pin marks, the area with thin resin thickness is narrow, raising concerns that the effect of reducing thermal resistance by the sleeve marks 16 is small.

[0008] On the other hand, if the support pins are made thicker and the area where the resin thickness is thin due to the support pin marks is widened, the support pins protrude further towards the lead frame than the sleeve. This widens the area where the resin flow path is narrow, reduces the resin's filling ability, and is known to those skilled in the art that this can lead to molding defects such as voids.

[0009] Furthermore, it is known among those skilled in the art that if the pin marks and sleeve marks are made too wide, the resulting space cannot make direct contact with the heat dissipation fins after the product is completed, which conversely reduces heat dissipation and consequently increases thermal resistance.

[0010] This disclosure is made to solve the above problems and aims to provide a resin-sealed semiconductor device and electrical equipment with low thermal resistance due to support pin marks formed almost directly beneath the semiconductor element and sleeve marks that match the heat diffusion range, as well as a method for manufacturing the same. [Means for solving the problem]

[0011] The resin-encapsulated semiconductor device of this disclosure includes a lead frame including a die pad, a semiconductor element placed on the upper surface of the die pad, and a mold resin for resin-encapsulating the semiconductor element, wherein the die pad is supported by sliding from a sleeve installed in a mold for forming the mold resin, and the die pad is initially positioned The semiconductor element comprises a support pin mark formed on the molded resin surface on the back side of the mounting surface of the semiconductor element after removing a support pin positioned at a depth that allows it to move downward from its position, and a sleeve mark formed on the molded resin surface on the back side of the mounting surface of the semiconductor element by the sleeve, wherein the support pin mark is formed almost directly below the semiconductor element, and the sleeve mark provided outside the support pin mark has a shape that matches the heat diffusion range.

[0012] In this type of resin-encapsulated semiconductor device, the support pins are located directly beneath the semiconductor element, allowing for a thinner resin layer on the back of the semiconductor element, which is the heat-generating part. Furthermore, the sleeve marks, which are widely provided to match the heat diffusion area, allow for a thinner resin layer in an area that effectively reduces thermal resistance. [Effects of the Invention]

[0013] As described above, with the resin-encapsulated semiconductor device of this disclosure, the resin thickness in a range effective for reducing thermal resistance can be reduced by the support pin marks provided directly beneath the semiconductor element and the sleeve marks provided widely to match the heat diffusion range. [Brief explanation of the drawing]

[0014] [Figure 1] This figure shows an example of a resin-encapsulated semiconductor device in the first embodiment of this disclosure (a view of the molded resin surface on the back side of the semiconductor element mounting area). [Figure 2] This is a diagram illustrating the thermal diffusion range related to this disclosure. [Figure 3] This figure shows an example of a resin-encapsulated semiconductor device in a second embodiment of the present disclosure (a view of the molded resin surface on the back side of the semiconductor element mounting area). [Figure 4] It is a diagram illustrating the outer diameter of a support pin mark in the third embodiment of the present disclosure (a view of the mold resin surface on the back side of a semiconductor element mounting portion). [Figure 5] It is a diagram illustrating the thickness of the mold resin from a support pin mark to the back surface of a die pad in the fourth embodiment of the present disclosure (an enlarged cross-sectional view). [Figure 6] It is a diagram illustrating the depth of a support pin mark and the depth of a sleeve mark in the fifth embodiment of the present disclosure (an enlarged cross-sectional view). [Figure 7] It is a diagram showing an example of the resin-encapsulated semiconductor device according to the sixth embodiment of the present disclosure (a view of the mold resin surface on the back side of a semiconductor element mounting portion). [Figure 8] It is a diagram illustrating an air conditioner as an embodiment of an electric apparatus provided with the resin-encapsulated semiconductor device of the present disclosure. [Figure 9] It is a schematic diagram (cross-sectional view) of a molding step for the resin-encapsulated semiconductor device of the present disclosure. [Figure 10] It is a schematic diagram of a conventional resin-encapsulated semiconductor device (a view of the mold resin surface on the back side of a semiconductor element mounting portion). Mode for Carrying Out the Invention

[0015] Hereinafter, the present disclosure will be described in detail, but the present disclosure is not limited thereto.

[0016] As described above, reduction in thermal resistance has been demanded for resin-encapsulated semiconductor devices.

[0017] As a result of intensive studies on the above problem, the inventors of the present invention found that a resin-sealed semiconductor device including a lead frame containing a die pad, a semiconductor element disposed on an upper surface of the die pad, and a mold resin for encapsulating the semiconductor element with resin, wherein the device comprises: support pin marks formed on the surface of the mold resin on the back side of the mounting surface of the semiconductor element after removing a support pin which slidably supports the die pad from a sleeve disposed on a mold for forming the mold resin and is disposed at a depth allowing the die pad to move downward from an initial arrangement position; and sleeve marks formed on the surface of the mold resin on the back side of the mounting surface of the semiconductor element by the sleeve, wherein the support pin marks are formed substantially directly below the semiconductor element, and the sleeve marks provided outside the support pin marks have a shape matching a heat diffusion range; the resin-sealed semiconductor device can efficiently reduce thermal resistance, and thus completed the present disclosure.

[0018] Hereinafter, description will be given with reference to the drawings.

[0019] [First Embodiment] FIG. 1 is an example of a resin-sealed semiconductor device according to the first embodiment of the present disclosure (a surface view of mold resin on the back side of a mounting portion of a semiconductor element).

[0020] Figure 1 shows the configuration of a resin-encapsulated semiconductor device 100. The resin-encapsulated semiconductor device 100 includes a lead frame 12 including a die pad 11, a semiconductor element 13 mounted on the upper surface of the die pad 11, and a molding resin 14 for encapsulating the semiconductor element. Furthermore, it includes a support pin mark 15 formed on the surface of the molding resin on the back side of the mounting surface of the semiconductor element after the support pins, which slide from a sleeve installed in a mold for forming the molding resin to support the die pad 11 and are positioned at a depth that allows the die pad 11 to move downward from its initial position, are removed, and a sleeve mark 16 formed on the surface of the molding resin on the back side of the mounting surface of the semiconductor element by the sleeve. The support pin mark 15 is formed almost directly below the semiconductor element 13. In other words, the support pin mark 15 is provided at approximately the center of the semiconductor element 13. The sleeve mark 16 provided outside the support pin mark 15 is characterized by having a shape that matches the heat diffusion range. The heat diffusion range will be explained in detail in Figure 2. This feature allows for a reduction in the resin thickness within the range where thermal resistance reduction is effective, thereby enabling a reduction in thermal resistance.

[0021] Next, we will explain the thermal diffusion range. Figure 2 shows a thermographic contour map of the area around a semiconductor element when a semiconductor device is in operation.

[0022] The thermal diffusion range 21 in this disclosure refers to the range in the thermographic contour map when the semiconductor device is operating that is the same temperature range as the mounting surface of the semiconductor element. As can be seen from Figure 2, the thermal diffusion range is larger than the mounting surface of the semiconductor element. For example, if the vertical width of the semiconductor element is "L" (Length), the range is approximately 1.5 times larger, or "1.5L". The horizontal width is not shown, but it is considered best to make it approximately the same width as the vertical width. By making the resin thickness thinner to match the range where the temperature is similar to that of the semiconductor element, the effect of reducing thermal resistance can be obtained more efficiently.

[0023] [Second Embodiment] Figure 3 shows an example of a resin-encapsulated semiconductor device in the second embodiment of this disclosure (a view of the molded resin surface on the back side of the semiconductor element mounting area). The only difference from the first embodiment is the shape of the sleeve marks 16.

[0024] The resin-encapsulated semiconductor device 300 shown in Figure 3 is characterized in that the sleeve trace 16, which is provided outside the support pin trace 15 formed directly beneath the semiconductor element 13, is approximately the same size as the outer shape of the semiconductor element 13. Since the heat of the semiconductor device is emitted from the semiconductor element, the area around the outer shape of the semiconductor element exhibits the highest temperature. Therefore, by making the sleeve trace approximately the same size as the outer shape of the semiconductor element, it is possible to efficiently reduce thermal resistance.

[0025] [Third Embodiment] Figure 4 is a diagram illustrating the outer diameter of the support pin marks in the third embodiment of this disclosure (a view of the molded resin surface on the back side of the semiconductor element mounting area). The only difference from the second embodiment is the outer diameter of the support pin marks 15.

[0026] The outer diameter 15D (Diameter) of the support pin marks shown in Figure 4 is characterized by being between 1 mm and 3 mm. If the outer diameter 15D of the support pin marks is less than 1 mm, the support pins are thin and may break during resin encapsulation. On the other hand, if the outer diameter 15D of the support pin marks is greater than 3 mm, the flow path of the molding resin filling from the support pin marks to the back surface of the die pad on which the semiconductor element is installed is narrow over a wide area, which may reduce the resin filling efficiency. Therefore, if the outer diameter 15D of the support pin marks is between 1 mm and 3 mm, it is possible to reduce the resin thickness on the back surface directly beneath the chip while suppressing the occurrence of support pin breakage and resin filling defects.

[0027] [Fourth Embodiment] Figure 5 is a diagram (enlarged cross-sectional view) illustrating the thickness of the mold resin from the support pin marks to the back surface of the die pad in the fourth embodiment of this disclosure.

[0028] The thickness 14T (Thickness) of the molded resin from the support pin marks to the back surface of the die pad, as shown in Figure 5, is characterized by being in the range of 0.3 mm to 0.5 mm. If the thickness 14T of the molded resin from the support pin marks to the back surface of the die pad is less than 0.3 mm, the flow path of the molded resin becomes narrow during resin encapsulation, making it easy for resin incomplete filling to occur. On the other hand, if the thickness 14T of the molded resin from the support pin marks to the back surface of the die pad is greater than 0.5 mm, the thermal resistance becomes high. Therefore, by setting the thickness 14T of the molded resin from the pin marks to the back surface of the die pad in the range of 0.3 mm to 0.5 mm, it is possible to prevent resin incomplete filling while maintaining the effect of reducing thermal resistance.

[0029] [Fifth Embodiment] Figure 6 is a diagram (enlarged cross-sectional view) illustrating the depth of the support pin marks and the depth of the sleeve marks in the fifth embodiment of this disclosure. The only difference from the fourth embodiment is the thickness of the support pin marks (15T) and the thickness of the sleeve marks (16T).

[0030] The thickness 15T (Thickness) of the support pin marks shown in Figure 6 is 0.15 mm or less, the thickness 16T (Thickness) of the sleeve marks is 0.05 mm or more, and the depth of the support pin marks is 15T or less. In addition, the thickness 14T of the mold resin from the support pin marks to the back surface of the die pad is in the range of 0.3 mm to 0.5 mm. In this case, if the thickness 15T of the support pin marks is 0.15 mm or more, the gap between the die pad and the support pins created by the sliding of the support pins after the mold resin is filled will be narrow, and there is a possibility that the mold resin will not be completely filled into the gap. Also, if the thickness 16T of the sleeve marks is 0.05 mm or less, the resin thickness will be thick, and it is expected that the effect of reducing thermal resistance will be low. Furthermore, if the thickness 16T of the sleeve marks is deeper than the thickness 15T of the support pin marks, there will be a wide area where the flow path of the mold resin is narrow, which may cause a large amount of unfilled areas to occur. Therefore, by setting the thickness of the support pin mark depth to 0.15 mm or less, the thickness of the sleeve mark depth to 0.05 mm or more, and the thickness of the support pin mark depth to 15 mm or less, it becomes possible to prevent incomplete resin filling while maintaining the effect of reducing thermal resistance.

[0031] [Sixth Embodiment] Figure 7 shows an example of a resin-encapsulated semiconductor device in the sixth embodiment of this disclosure (a view of the molded resin surface on the back side of the semiconductor element mounting area).

[0032] The sleeve traces 16 of the resin-encapsulated semiconductor devices 700a and 700b in Figure 7 are characterized by containing multiple semiconductor elements that are prone to generating heat. Furthermore, the sleeve area may be in the form of containing multiple semiconductor elements 13 on each die pad, as in the resin-encapsulated semiconductor device 700a, or in the form of containing multiple semiconductor elements 13 on different die pads, as in the resin-encapsulated semiconductor device 700b. By making the sleeve traces 16 in the shape of containing multiple semiconductor elements 13, a wide area with a thin resin thickness can be formed, thereby efficiently reducing thermal resistance.

[0033] As described above, with the resin-encapsulated semiconductor device of this disclosure, the resin thickness can be reduced in an effective range for reducing thermal resistance due to the support pin marks provided directly beneath the semiconductor element and the sleeve marks provided widely to match the heat diffusion range. Therefore, a resin-encapsulated semiconductor device with low thermal resistance is obtained.

[0034] [Electrical equipment] Furthermore, a positional embodiment of an electrical device equipped with the resin-sealed semiconductor device of this disclosure will be described with reference to Figure 8. The resin-sealed semiconductor device of this disclosure can be applied to electrical devices. By using a resin-sealed semiconductor device with low thermal resistance, electrical devices can be made with reduced lifespan and performance degradation.

[0035] The electrical equipment is not particularly limited, but in particular, the resin-encapsulated semiconductor device (IPM) example described above can be suitably applied as a small high-voltage three-phase motor driver to electrical equipment for driving compressors in air conditioners and refrigerators, or to the main motor of a washing machine, etc.

[0036] Figure 8 illustrates an air conditioner 800 as an example of an electrical device. The air conditioner 800 consists of an indoor unit 81 and an outdoor unit 82, each equipped with fan motors 84 and 85, a compressor 86, and an IPM 83 as a resin-encapsulated semiconductor device. The IPM 83 should be of a specification suitable for driving each motor and compressor.

[0037] [Manufacturing method for resin-encapsulated semiconductor devices] Next, the method for manufacturing the resin-sealed semiconductor device of this disclosure will be described. Note that some details described in the section on the resin-sealed semiconductor device of this disclosure may be omitted, but the details described in the section on the resin-sealed semiconductor device of this disclosure are applicable to the method for manufacturing the resin-sealed semiconductor device of this disclosure.

[0038] Figure 9 shows a schematic diagram (cross-sectional view) of the molding process of the resin-encapsulated semiconductor device according to the present disclosure. The method for manufacturing a resin-encapsulated semiconductor device according to the present disclosure is a method for manufacturing a resin-encapsulated semiconductor device that includes a lead frame 12 including a die pad 11, a semiconductor element 13 placed on the upper surface of the die pad 11, and a molding resin 14 for resin-encapsulating the semiconductor element 13, wherein the semiconductor element 13 is installed With the prepared lead frame 12 housed inside the molds 94 and 95 for molding the mold resin 14, before injecting the mold resin 14 into the mold cavity 96, the die pad 11 slides from a sleeve 91 installed in the lower mold 95 and is supported by support pins 92 from the back of the mounting surface of the semiconductor element 13. The support pins 92 are installed almost directly below the semiconductor element 13, and the sleeve 91 has a shape that matches the heat diffusion range.

[0039] In Figure 9, the semiconductor element 13 is bonded to the surface of the die pad 11 of the lead frame 12. One end of the wire 93 is joined to the electrode of the semiconductor element 13, and the other end of the wire 93 is joined to the inner lead portion of the lead frame 12.

[0040] In contrast, the molding die consists of a pair of upper molds 94 and lower molds 95, and a cavity 96 is formed when both molds 94 and 95 are combined. Then, the lead frame 12 is placed in the molding die for mold forming.

[0041] Before the resin is injected into the cavity 96, a support pin 92, located almost directly beneath the semiconductor element 13 and sliding through a through-hole 91H (Hole) in a sleeve installed in the lower mold 95, supports the back side 11B (Back side) of the die pad. The sleeve 91 is shaped to match the heat diffusion range of the semiconductor element 13. After the molding resin is injected into the cavity 96, the support pin 92 retracts into the through-hole 91a of the sleeve. The space created by the retraction of the support pin 92 is filled with the molding resin injected into the cavity 96.

[0042] According to the method for manufacturing a resin-encapsulated semiconductor device described herein, a resin-encapsulated semiconductor device with a simple structure and low thermal resistance can be manufactured.

[0043] This specification includes the following embodiments: [1]: A resin-sealed semiconductor device comprising a lead frame including a die pad, a semiconductor element mounted on the upper surface of the die pad, and a mold resin for resin-sealing the semiconductor element, wherein the resin-sealed semiconductor device comprises: support pin marks formed on the surface of the mold resin on the back side of the mounting surface of the semiconductor element after the removal of support pins which slide from a sleeve installed in a mold for forming the mold resin to support the die pad and are positioned at a depth that allows the die pad to move downward from its initial position; and sleeve marks formed on the surface of the mold resin on the back side of the mounting surface of the semiconductor element by the sleeve, wherein the support pin marks are formed almost directly below the semiconductor element, and the sleeve marks provided outside the support pin marks have a shape that matches the heat diffusion range. [2]: The resin-encapsulated semiconductor device according to [1] above, wherein the sleeve mark is approximately the same size as the outer shape of the semiconductor element. [3]: The resin-sealed semiconductor device according to [2] above, characterized in that the sleeve marks include support pin marks on the inside with an outer diameter of 1 mm to 3 mm corresponding to the outer shape of the semiconductor. [4]: The resin-sealed semiconductor device according to [1] above, characterized in that the thickness of the molding resin filling the space from the support pin marks to the back surface of the die pad on which the semiconductor element is installed is in the range of 0.3 mm to 0.5 mm. [5]: The resin-sealed semiconductor device according to [4] above, wherein the depth of the support pin marks is 0.15 mm or less, and the depth of the sleeve marks is 0.05 mm or more and less than or equal to the depth of the pin marks. [6]: The resin-encapsulated semiconductor device according to [1] above, wherein the sleeve trace has a shape that includes multiple semiconductor elements that are prone to generating heat. [7]: An electrical device characterized by including a resin-encapsulated semiconductor device as described in any one of the above items [1] to [6]. [8]: A method for manufacturing a resin-sealed semiconductor device, comprising: a lead frame including a die pad; a semiconductor element placed on the upper surface of the die pad; and a mold resin for resin-sealing the semiconductor element, wherein support pin marks and sleeve marks are formed on the back side of the mounting surface of the semiconductor element, the method comprising the step of supporting the die pad from the back side of the mounting surface of the semiconductor element by sliding from a sleeve installed in the mold before injecting the mold resin into the cavity of the mold, wherein the support pin is placed almost directly below the semiconductor element, and the sleeve is shaped to match the heat diffusion range.

[0044] This disclosure is not limited to the embodiments described above. The embodiments described above are illustrative, and any configuration that is substantially identical to the technical idea described in the claims of this disclosure and produces similar effects is included within the technical scope of this disclosure. [Explanation of Symbols]

[0045] 11...Die pad, 11B...Back of die pad, 12...Lead frame, 13... Semiconductor elements, 14... Molding resin, 14T…Thickness of molded resin from the support pin mark to the back of the die pad. 15...Support pin mark, 15D...Diameter of support pin mark, 15T...Thickness of the depth of the support pin mark 16...Sleeve mark, 16T...Depth of sleeve mark, 21…Thermal diffusion range, 81...Indoor unit, 82...Outdoor unit, 83...IPM (Insulated Semiconductor Device), 84, 85...fan motor, 86...compressor 91...Sleeve, 91H...Through hole, Sleeve 92...Support pin, 93...Wire 94...Upper mold, 95...Lower mold, 96...Cavity 100, 110, 300, 700a, 700b... Resin-encapsulated semiconductor devices, 800... Air conditioner

Claims

1. A resin-encapsulated semiconductor device comprising a lead frame including a die pad, a semiconductor element placed on the upper surface of the die pad, and a molding resin for resin-encapsulating the semiconductor element, The system includes a support pin mark formed on the surface of the mold resin on the back side of the mounting surface of the semiconductor element after the support pin, which slides from a sleeve installed in a mold for forming the mold resin to support the die pad and is positioned to a depth that allows the die pad to move downward from its initial position, is removed, and a sleeve mark formed on the surface of the mold resin on the back side of the mounting surface of the semiconductor element by the sleeve, The support pin marks are formed almost directly beneath the semiconductor element, and the sleeve marks provided outside the support pin marks are shaped to match the heat diffusion range. A resin-encapsulated semiconductor device characterized by the following.

2. The resin-encapsulated semiconductor device according to claim 1, wherein the sleeve mark is approximately the same size as the outer shape of the semiconductor element.

3. The resin-sealed semiconductor device according to claim 2, characterized in that the sleeve mark includes, on the inside, support pin marks with an outer diameter of 1 mm to 3 mm corresponding to the outer shape of the semiconductor.

4. The resin-sealed semiconductor device according to claim 1, characterized in that the thickness of the molding resin filling the space from the support pin marks to the back surface of the die pad on which the semiconductor element is installed is in the range of 0.3 mm to 0.5 mm.

5. The depth of the support pin marks is 0.15 mm or less. The resin-sealed semiconductor device according to claim 4, wherein the depth of the sleeve mark is 0.05 mm or more and the depth of the pin mark is less than or equal to the depth of the pin mark.

6. The resin-encapsulated semiconductor device according to claim 1, wherein the sleeve mark has a shape that includes multiple semiconductor elements that are prone to generating heat.

7. An electrical device characterized by including a resin-sealed semiconductor device as described in any one of claims 1 to 6.

8. A method for manufacturing a resin-encapsulated semiconductor device, comprising: a lead frame including a die pad; a semiconductor element mounted on the upper surface of the die pad; and a molding resin for resin-encapsulating the semiconductor element, wherein support pin marks and sleeve marks are formed on the back side of the mounting surface of the semiconductor element. With the lead frame on which the semiconductor element is installed housed inside a mold for molding the mold resin, the process includes, before injecting the mold resin into the cavity of the mold, a step in which the die pad slides out of a sleeve installed in the mold and is supported from the back of the mounting surface of the semiconductor element by support pins, The support pin is installed almost directly below the semiconductor element, A method for manufacturing a resin-sealed semiconductor device, characterized in that the sleeve has a shape that matches the heat diffusion range.

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