Resonator and filter circuits

Abstract

To provide resonator and filter circuits that can improve characteristics. [Solution] According to the embodiment, the resonator includes a structure and a metal housing. The structure includes a first conductive film, a second conductive film, a dielectric substrate, a connecting member, and a capacitive member. The first conductive film includes a first extending region extending along a first direction and a first opposing region. The second direction from the first conductive film to the second conductive film intersects the first direction. The dielectric substrate is located between the first conductive film and the second conductive film. The connecting member penetrates the dielectric substrate and electrically connects the first conductive film and the second conductive film to each other. The capacitive member is located between the first extending region and the first opposing region. The metal housing includes a first metal portion, a second metal portion, and a side portion. The structure is located between the first metal portion and the second metal portion in the first direction. The side portion is located around the structure in a plane intersecting the first direction.

Description

[Technical Field]

[0001] Embodiments of the present invention relate to a resonator and a filter circuit. [Background Art]

[0002] For example, in a high-frequency circuit, a resonator is used in a filter circuit. Improvements in characteristics are required for resonators and filter circuits. [Prior Art Document] [Patent Document]

[0003] [Patent Document 1] Japanese Patent Laid-Open No. 11-145709 [Summary of the Invention] [Problem to be Solved by the Invention]

[0004] Embodiments of the present invention provide a resonator and a filter circuit that can improve characteristics. [Means for Solving the Problem]

[0005] According to an embodiment of the present invention, the resonator includes a structure and a metal casing. The structure includes a first conductive film, a second conductive film, a dielectric substrate, a connection member, and a capacitive member. The first conductive film includes a first extending region extending along a first direction, and a first opposing region. A second direction from the first conductive film to the second conductive film intersects the first direction. The dielectric substrate is located between the first conductive film and the second conductive film. The connection member penetrates the dielectric substrate and electrically connects the first conductive film and the second conductive film to each other. The capacitive member is located between the first extending region and the first opposing region. The metal casing includes a first metal portion, a second metal portion, and a side portion. The structure is located between the first metal portion and the second metal portion in the first direction. The side portion is provided around the structure on a plane intersecting the first direction. [Brief Description of the Drawings]

[0006] [Figure 1] Figures 1(a) to 1(c) are schematic diagrams illustrating a resonator according to the first embodiment. [Figure 2] Figures 2(a) and 2(b) are schematic diagrams illustrating example resonators. [Figure 3] Figures 3(a) to 3(c) are schematic diagrams illustrating a resonator according to the first embodiment. [Figure 4] Figures 4(a) to 4(c) are schematic diagrams illustrating a filter circuit according to the second embodiment. [Figure 5] Figures 5(a) and 5(b) are schematic diagrams illustrating the characteristics of a filter circuit according to the second embodiment. [Figure 6] Figure 6 is a schematic diagram illustrating a filter circuit according to the third embodiment. [Figure 7] Figures 7(a) and 7(b) are schematic diagrams illustrating a filter circuit according to the third embodiment. [Figure 8] Figures 8(a) and 8(b) are schematic plan views illustrating a resonator according to the fourth embodiment. [Figure 9] Figure 9 is a graph illustrating the characteristics of a resonator. [Figure 10] Figure 10 is a graph illustrating the characteristics of a resonator. [Modes for carrying out the invention]

[0007] Embodiments of the present invention will be described below with reference to the drawings. Drawings are schematic or conceptual, and the relationships between the thickness and width of each part, as well as the ratios of the sizes of different parts, are not necessarily identical to those of reality. Even when representing the same part, the dimensions and ratios may be depicted differently in different drawings. In this specification and in each figure, elements similar to those described above are denoted by the same reference numerals with respect to previously shown figures, and detailed explanations are omitted as appropriate.

[0008] (First Embodiment) Figures 1(a) to 1(c) are schematic diagrams illustrating a resonator according to the first embodiment. Figure 1(a) is a transparent perspective view. Figures 1(b) and 1(c) are plan views. As shown in Figure 1(a), the resonator 110 according to this embodiment includes a structure 10S and a metal housing 50.

[0009] The structure 10S includes a first conductive film 10, a second conductive film 20, a dielectric substrate 35, a connecting member 38, and a capacitive member 31.

[0010] The first conductive film 10 includes a first extending region 11 and a first opposing region 12. The first extending region 11 extends along a first direction D1.

[0011] The first direction D1 is defined as the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the Y-axis direction. The direction perpendicular to both the Z-axis direction and the X-axis direction is defined as the X-axis direction.

[0012] The second direction D2 from the first conductive film 10 to the second conductive film 20 intersects with the first direction D1. The second direction D2 may be, for example, the Y-axis direction.

[0013] The dielectric substrate 35 is located between the first conductive film 10 and the second conductive film 20. The connecting member 38 penetrates the dielectric substrate 35 and electrically connects the first conductive film 10 and the second conductive film 20 to each other. In this example, multiple connecting members 38 are provided. The multiple connecting members 38 penetrate the dielectric substrate 35 and electrically connect the first conductive film 10 and the second conductive film 20 to each other.

[0014] The capacitive member 31 is located between the first extending region 11 and the first opposing region 12. In this example, the first extending region 11 includes a first portion 11a and a first other portion 11b. The direction from the first portion 11a to the first other portion 11b is along the first direction D1. The capacitive member 31 is located between the first other portion 11b and the first opposing region 12.

[0015] The metal casing 50 includes a first metal portion 51, a second metal portion 52, and a side portion 53. The structure 10S is located between the first metal portion 51 and the second metal portion 52 in the first direction D1. The side portion 53 is provided around the structure 10S in a plane intersecting the first direction D1 (e.g., an X-Y plane).

[0016] In an embodiment, the first extending region 11 of the first conductive film 10 extends along the first direction D1. The first extending region 11 functions, for example, as at least part of a central conductive member of a coaxial resonator. The metal casing 50 functions as an outer ground conductive member of the coaxial resonator.

[0017] In an embodiment, the first extending region 11 is stably supported by the dielectric substrate 35. A narrow first extending region 11 can be stably obtained. In the embodiment, for example, a high Q-factor can be stably obtained. A resonator with improved characteristics is provided.

[0018] For example, the capacitance of the capacitive member 31 may be variable. The resonance frequency can be controlled by changing the capacitance of the capacitive member 31. In the embodiment, a high Q-factor can be obtained even for a variable frequency in a wide range. For example, loss can be suppressed.

[0019] FIGS. 2(a) and 2(b) are schematic diagrams illustrating a resonator of a reference example. As shown in FIG. 2(a), the resonator of the reference example has a semi-coaxial structure. The resonator of the reference example includes a central conductive member and an outer conductive member surrounding the central conductive member. The characteristic impedance Zc1 of the resonator can be calculated from the outer diameter of the central conductive member and the inner diameter of the outer conductive member. In this example, a gap is provided between the inner conductive member and the outer conductive member. One end of the central conductive member is grounded, and the other end is open. Such a resonator functions as a quarter-wavelength coaxial resonator. A variable capacitance diode is connected to the other end of the central conductive member. The frequency can be adjusted by the capacitance of the variable capacitance diode. The variable capacitance diode may be, for example, a varactor diode.

[0020] Figure 2(b) shows examples of calculated results of the change in the resonant frequency variation Rf1 when the capacitance of a variable capacitance diode is changed for each case where the characteristic impedance of such a resonator is changed. The variation Rf1 is the ratio of the highest value to the lowest value in the range of the variable resonant frequency.

[0021] As shown in Figure 2(b), as the characteristic impedance Zc1 increases, the frequency variation Rf1 increases. To obtain a large tuning range, it is advisable to increase not only the variable value of the capacitance but also the characteristic impedance Zc1 of the coaxial structure connected to it.

[0022] Generally, the characteristic impedance of a coaxial structure is a function of the ratio of the inner diameter of the outer conductive member to the outer diameter of the inner conductive member. For example, a high characteristic impedance Zc1 can be obtained by making the inner conductive member thinner or increasing the inner diameter of the outer conductive member. For instance, making the inner conductive member thinner allows for a high characteristic impedance Zc1 while maintaining a small overall size.

[0023] In this embodiment, a first extending region 11 extending in a first direction D1 is provided. The first extending region 11 can be stably formed in a narrow shape on the dielectric substrate 35. This allows for a stable acquisition of a high characteristic impedance Zc1 while maintaining a small size. It also allows for a wide range of variable resonant frequencies while maintaining a high Q value.

[0024] In this embodiment, the metal housing 50 may be set to a fixed potential (e.g., ground potential). As shown in Figure 1(a), the first portion 11a of the first extending region 11 may be electrically connected to the first metal portion 51 of the metal housing 50.

[0025] As shown in Figure 1(b), the first conductive film 10 may further include a first other region 15. The first other region 15 is located around the first extending region 11 in a first plane (ZX plane) intersecting the second direction D2. The first opposing region 12 may be connected to the first other region 15. In Figure 1(a), the first other region 15 is omitted.

[0026] As shown in Figure 1(c), the second conductive film 20 may include a second extending region 21 and a second other region 25. The second extending region 21 extends along the first direction D1. The direction from the first extending region 11 to the second extending region 21 is along the second direction D2. The second other region 25 is located around the second extending region 21 in the first plane (ZX plane).

[0027] The second extending region 21 may include a second portion 21a and a second other portion 21b. The second portion 21a may be connected to the second other region 25. The second conductive film 20 may further include a second opposing region 22. The second opposing region 22 is connected to the second other region 25. The second opposing region 22 faces the second other portion 21b. The second opposing region 22 is separated from the second other portion 21b.

[0028] The connecting member 38 electrically connects the first extended region 11 and the second extended region 21. The first extended region 11, the second extended region 21, and the connecting member connecting them may function as the inner conductive members of the coaxial structure.

[0029] As shown in Figure 1(b), the length of the first extending region 11 along the first direction D1 is defined as the first length L1. The length (width) of the first extending region 11 along the third direction D3 is defined as the third length L3. The third direction D3 intersects the plane containing the first direction D1 and the second direction D2. The third direction D3 may be, for example, the X-axis direction. In this embodiment, the first length L1 is 5 times or more the third length L3. A high characteristic impedance Zc1 is easily obtained. The first length L1 may also be 10 times or more the third length L3. The first length L1 may also be 50 times or more the third length L3.

[0030] As shown in Figure 1(a), the distance between the first extending region 11 and the side portion 53 is defined as the first distance dx1. For example, the first length L1 along the first direction D1 of the first extending region 11 may be 1.5 times or more the first distance dx1. This makes it easier to obtain a high characteristic impedance Zc1.

[0031] As shown in Figure 1(b), the distance in the third direction D3 between the first extending region 11 and the first other region 15 is defined as the second distance dx2. The first length L1 can be 1.5 times or more the second distance dx2. This makes it easier to obtain a high characteristic impedance Zc1.

[0032] The first length L1 may be 10 times or more the thickness of the first conductive film 10 (and the first extended region 11). The thickness corresponds to the second direction D2. The thickness of the first conductive film 10 (and the first extended region 11) may be, for example, 0.1 μm or more and 2000 μm or less.

[0033] In this embodiment, the characteristic impedance of the coaxial circuit including the first conductive film 10, the second conductive film 20, and the metal housing 50 is, for example, 100 Ω or more. For example, a large frequency variability range (frequency variation Rf1) of 1.4 times or more can be obtained.

[0034] In embodiments, the dielectric substrate 35 may include an insulating member. The insulating member may include at least one of an inorganic material and an organic material. The dielectric substrate 35 may include, for example, a material used for a flexible substrate. The material used for a flexible substrate may include, for example, polyimide or a liquid crystal polymer material. The dielectric substrate 35 may include, for example, a glass cloth substrate or a fluororesin-based substrate. The dielectric substrate 35 may include, for example, a ceramic substrate. The ceramic substrate may include, for example, alumina.

[0035] In the embodiment, at least one of the first conductive film 10, the second conductive film 20, the connecting member 38, and the metal housing 50 contains a metal. The metal includes, for example, at least one selected from the group consisting of gold and copper. The metal may include, for example, at least one of aluminum, aluminum-containing alloys, niobium, niobium-titanium alloys, tantalum, and tantalum-containing alloys. At least one of the first conductive film 10, the second conductive film 20, the connecting member 38, and the metal housing 50 may contain a material that exhibits superconducting properties at low temperatures.

[0036] The capacitive member 31 may include at least one selected from the group consisting of capacitors, variable capacitance diodes, MEMS capacitors, and variable capacitors. The capacitive member 31 may include an electromagnetic coupling structure that includes a plurality of electrodes.

[0037] The space between the metal housing 50 and the dielectric substrate 35 may contain, for example, air, an inert gas, or an insulating gas. The space between the metal housing 50 and the dielectric substrate 35 may be depressurized, for example.

[0038] The structure 10S is sandwiched between multiple parts of the metal housing 50. A coaxial structure can be easily obtained. The extended region can be formed with high precision by patterning the conductive film.

[0039] Figures 3(a) to 3(c) are schematic diagrams illustrating a resonator according to the first embodiment. Figure 3(a) is a transparent perspective view. Figures 3(b) and 3(c) are plan views. As shown in Figure 3(a), in the embodiment of the resonator 111, the structure of the capacitive member 31 is different from that of the resonator 110. The rest of the configuration of the resonator 111 may be the same as that of the resonator 110.

[0040] As shown in Figure 3(b), in the resonator 111, the capacitive member 31 includes a variable capacitance diode 31D. In this example, the capacitive member 31 includes multiple variable capacitance diodes 31D. The multiple variable capacitance diodes 31D are connected in parallel between the first extending region 11 and the first opposing region 12. A large change in capacitance can be obtained with the multiple variable capacitance diodes 31D. The number of multiple variable capacitance diodes 31D is arbitrary.

[0041] In this example, the first conductive film 10 includes a plurality of first opposing regions 12. A plurality of variable capacitance diodes 31D are connected in parallel between one of the plurality of first opposing regions 12 and the first extending region 11. Another plurality of variable capacitance diodes 31D are connected in parallel between another of the plurality of first opposing regions 12 and the first extending region 11.

[0042] Multiple first opposing regions 12 are each connected to a first other region 15.

[0043] In this example, the capacitive member 31 further includes a capacitor 31C in addition to the variable capacitance diode 31D. The capacitor 31C is connected in series with the variable capacitance diode 31D. In this example, the variable capacitance diode 31D is connected between the first extending region 11 and the first opposing region 12. The capacitor 31C is connected between the variable capacitance diode 31D and the first opposing region 12.

[0044] The resonator 111 may further include a bias circuit 70. The bias circuit 70 is configured to control the potential at the connection point between the variable capacitance diode 31D and the capacitor 31C. In this example, there are two connection points corresponding to two first opposing regions 12. The bias circuit 70 controls the potentials of each of the two connection points (e.g., a first potential V1 and a second potential V2). The capacitance of the variable capacitance diode 31D can be controlled. The resonant frequency can be changed.

[0045] (Second Embodiment) Figures 4(a) to 4(c) are schematic diagrams illustrating a filter circuit according to the second embodiment. Figure 4(a) is a transparent perspective view. Figures 4(b) and 4(c) are plan views. As shown in Figure 4(a), the filter circuit 212 according to the embodiment includes a resonator 112 according to the embodiment and a transmission line 41. The transmission line 41 is configured to be coupled with a first extended region 11 included in the resonator 112.

[0046] In the example of the resonator 112, the first conductive film 10 includes a plurality of first opposing regions 12. A plurality of variable capacitance diodes 31D are connected in parallel between one of the plurality of first opposing regions 12 and the first extending region 11. Another plurality of variable capacitance diodes 31D are connected in parallel between another of the plurality of first opposing regions 12 and the first extending region 11.

[0047] In this example, the transmission line 41 is in contact with the dielectric substrate 35. The transmission line 41 is formed on one surface of the dielectric substrate 35. The transmission line 41 may be formed from a material that will become the first conductive film 10.

[0048] The filter circuit 212 may include a coupling member 45. The coupling member 45 is located between the transmission line 41 and the resonator 112. The coupling member 45 is located between the transmission line 41 and the first extended region 11 included in the resonator 112.

[0049] The coupling member 45 may include at least one of a coupling capacitor and a coupling variable capacitance diode. The coupling member 45 may include at least one selected from the group consisting of a capacitor, a variable capacitance diode, a MEMS capacitor, and a variable capacitor. The coupling member 45 may include an electromagnetic field coupling structure including a plurality of electrodes. The transmission line 41 may be configured to electromagnetically couple with the first extending region 11.

[0050] In the filter circuit 212, for example, the signal propagating through the transmission line 41 is controlled. The filter circuit 212 functions, for example, as a band-stop filter.

[0051] The transmission line 41 may have, for example, a microphone strip line structure. The transmission line 41 may have, for example, a coplanar line structure, a strip line structure, a waveguide structure, or a coaxial line structure.

[0052] The resonator 112, coupled to the transmission line 41, reflects the signal input from the input terminal of the transmission line 41 at the resonant frequency of the resonator 112 and returns to the input terminal side. As a result, the signal is not output to the output side. This causes a specific frequency to be attenuated.

[0053] For example, multiple resonators 112 may be coupled to a single transmission line 41. This can, for example, increase the attenuation.

[0054] For example, the resonator 112 may include a variable capacitance diode 31D. The resonator 112 functions as a frequency-variable resonator. This allows the stopband of the band-stop filter to be changed.

[0055] In the filter circuit 212, the coupling member 45 may include a variable capacitance diode. The stopband bandwidth of the bandstop filter can be changed. For example, the stopband can be widened when the coupling amount is large, and narrowed when the coupling amount is small.

[0056] For example, a variable frequency resonator and a variable coupling member may be combined. The resonant frequency and bandwidth can be changed. A single resonator 112 can handle various signals. For example, by increasing the characteristic impedance Zc1 based on the first extended region 11 and the metal housing 50, a large frequency variability can be obtained while maintaining a small size.

[0057] Figures 5(a) and 5(b) are schematic diagrams illustrating the characteristics of a filter circuit according to the second embodiment. Figure 5(a) schematically shows the calculated electric field distribution at the resonant frequency of the filter circuit 212. The density in the image in Figure 5(a) corresponds to the electric field strength. In Figure 5(b), the horizontal axis is frequency. The vertical axis is either the reflection characteristic S(1,1) or the transmission characteristic S(2,1).

[0058] As shown in Figure 5(a), at the resonant frequency, the electric field is concentrated in the portion corresponding to the first extended region 11. A quarter-wavelength resonance is obtained.

[0059] As shown in Figure 5(b), the signal is attenuated at the resonant frequency and passes through at other frequencies. A band-stop filter with good characteristics is obtained.

[0060] (Third embodiment) Figures 6, 7(a), and 7(b) are schematic diagrams illustrating a filter circuit according to the third embodiment. Figure 6 is a transparent perspective view. Figures 7(a) and 7(b) are plan views. As shown in Figure 6, the filter circuit 213 according to the embodiment includes a plurality of resonators 113 and a plurality of transmission lines 41.

[0061] In one of the multiple resonators 113, the first conductive film 10 includes multiple first opposing regions 12. In this example, a variable capacitance diode 31D is connected between one of the multiple first opposing regions 12 and the first extending region 11. Another variable capacitance diode 31D is connected between another of the multiple first opposing regions 12 and the first extending region 11.

[0062] In this example, multiple transmission lines 41 are in contact with the dielectric substrate 35. Multiple transmission lines 41 are formed on one surface of the dielectric substrate 35. Multiple transmission lines 41 may be formed from a material that will become the first conductive film 10.

[0063] One of the multiple transmission lines 41 is configured to be coupled to an input / output section (input section 40a or output section 40b) and one of the multiple resonators 113. Another of the multiple transmission lines 41 is configured to be coupled to one of the multiple resonators 113 and another of the multiple resonators 113. The filter circuit 213 functions, for example, as a band-pass filter.

[0064] The filter circuit 213 may include a coupling member 45. The coupling member 45 is located between one of the plurality of transmission lines 41 and one of the plurality of resonators 113. The coupling member 45 may include at least one of a coupling capacitor and a coupling variable capacitance diode.

[0065] The filter circuit 213 may include a plurality of coupling members 45. One of the plurality of coupling members 45 is located between another of the plurality of transmission lines 41 and one of the plurality of resonators 113. One of the plurality of coupling members 45 may include at least one of a coupling capacitor and a coupling variable capacitance diode.

[0066] The coupling member 45 may be connected to one open end of the plurality of resonators 113. The coupling member 45 may be connected to the open end of the first extended region 11 included in one of the plurality of resonators 113.

[0067] The coupling member 45 included in the filter circuit 213 may include at least one selected from the group consisting of capacitors, variable capacitance diodes, MEMS capacitors, and variable capacitors. The coupling member 45 may include an electromagnetic field coupling structure including multiple electrodes. One of the multiple transmission lines 41 and one of the multiple resonators 113 may be coupled by electromagnetic field coupling.

[0068] The filter circuit 213 provides a low-loss band-pass filter.

[0069] (Fourth Embodiment) Figures 8(a) and 8(b) are schematic plan views illustrating a resonator according to the fourth embodiment. As shown in Figures 8(a) and 8(b), the resonator 120 according to this embodiment includes a first conductive film 10, a second conductive film 20, a dielectric substrate 35, a connecting member 38, and a capacitive member 31.

[0070] The first conductive film 10 includes a first extending region 11 extending along a first direction D1 and a first other region 15. The first extending region 11 includes a first portion 11a and a first other portion 11b. The direction from the first portion 11a to the first other portion 11b is along the first direction D1. The first portion 11a is connected to the first other region 15. The first other region 15 lies around the first extending region 11 in a first plane (e.g., the ZX plane) along the first direction D1.

[0071] The second conductive film 20 includes a second extending region 21 extending along a first direction D1 and a second other region 25. The second extending region 21 includes a second portion 21a and a second other portion 21b. The direction from the second portion 21a to the second other portion 21b is along the first direction D1. The second portion 21a is connected to the second other region 25. The second other region 25 is around the second extending region 21 in the first plane (ZX plane). The second other portion 21b is separate from the second other region 25. The second direction D2 from the first conductive film 10 to the second conductive film 20 intersects the first plane (ZX plane).

[0072] The dielectric substrate 35 is located between the first conductive film 10 and the second conductive film 20. The connecting member 38 penetrates the dielectric substrate 35 and electrically connects the first conductive film 10 and the second conductive film 20 to each other. The capacitive member 31 is located between the first other portion 11b and the first other region 15.

[0073] In the resonator 120, a narrow first extended region 11 can be stably obtained. In the embodiment, for example, a high Q value can be stably obtained. A resonator with improved characteristics is provided. In the resonator 120, the capacitance of the capacitive member 31 may be variable. The resonant frequency can be controlled by changing the capacitance of the capacitive member 31. In the embodiment, a high Q value can be obtained even at a wide range of variable frequencies. For example, losses can be suppressed.

[0074] As shown in Figure 8(b), the length of the first extending region 11 along the first direction D1 is defined as the first length L1. The length of the first extending region 11 along the third direction D3 is defined as the third length L3. The third direction D3 intersects the plane containing the first direction D1 and the second direction D2. The first length L1 is at least five times the third length L3. A high characteristic impedance Zc1 is easily obtained.

[0075] As shown in Figure 8(b), the distance in the third direction D3 between the first extending region 11 and the first other region 15 is defined as the second distance dx2. The first length L1 can be 1.5 times or more the second distance dx2. This makes it easier to obtain a high characteristic impedance Zc1.

[0076] The capacitive member 31 included in the resonator 120 can be configured according to the configuration described with respect to the first embodiment.

[0077] The following is an example regarding the characteristics of a resonator. Figure 9 is a graph illustrating the characteristics of a resonator. The horizontal axis in Figure 9 represents the first length ratio R1. The first length ratio R1 is the ratio (L1 / L3) of the first length L1 to the third length L3. The vertical axis represents the characteristic evaluation parameter PA1. The characteristic evaluation parameter PA1 is a function of the frequency variable amount and the Q value. For example, under the condition that the Q value is constant, a large characteristic evaluation parameter PA1 corresponds to a large frequency variable amount. For example, under the condition that the frequency variable amount is constant, a large characteristic evaluation parameter PA1 corresponds to a large Q value (small loss). In practice, a large characteristic evaluation parameter PA1 is preferable.

[0078] As shown in Figure 9, a higher first length ratio R1(L1 / L3) results in larger characteristic evaluation parameters. A high first length ratio R1 is preferable. A first length ratio R1 is preferably 5 or higher. A first length ratio R1 may also be 10 or higher. A first length ratio R1 may also be 50 or higher.

[0079] Figure 10 is a graph illustrating the characteristics of a resonator. The horizontal axis in Figure 10 represents the first length ratio R2. The second length ratio R2 is the ratio of the first length L1 to the first distance dx1 (L1 / dx1). The vertical axis represents the characteristic evaluation parameter PA1. As shown in Figure 9, a higher second length ratio R2 (L1 / dx1) results in a larger characteristic evaluation parameter. A high second length ratio R2 is preferable. The second length ratio R2 is preferably 1.5 or higher. The second length ratio R2 may also be 5 or higher.

[0080] In the first to fourth embodiments, another conductive film may be provided between the first conductive film 10 and the second conductive film 20. Another dielectric substrate may be provided between the first conductive film 10 and the other conductive film. For example, the first conductive film 10 may be provided on one side of one dielectric substrate. Another conductive film may be provided on another side (e.g., the back side) of that dielectric substrate. The second conductive film 20 may be provided on one side of another dielectric substrate. Another conductive film may be provided on another side (e.g., the back side) of that other dielectric substrate. The two back sides may face each other. A multilayer laminated structure may be applied in this manner. In the laminated structure, the number of laminated dielectric substrates is arbitrary.

[0081] The embodiments may include the following technical proposals. (Technical proposal 1) A first conductive film comprising a first extending region extending along a first direction and a first opposing region, The second conductive film is a second direction from the previous first conductive film to the previous second conductive film, intersecting the previous first direction with respect to the previous second conductive film. A dielectric substrate between the first conductive film and the second conductive film, A connecting member that penetrates the dielectric substrate and electrically connects the first conductive film and the second conductive film to each other, A capacitive member between the first extending region and the first opposing region, A structure that includes, Metal casing, Equipped with, The metal housing includes a first metal portion, a second metal portion, and a side portion. The structure is located between the first metal portion and the second metal portion in the first direction. The aforementioned side portion is a resonator located around the structure in a plane intersecting the first direction.

[0082] (Technical proposal 2) The first length of the first extending region along the first direction is five times or more the third length of the first extending region along the third direction. The third direction intersects with the plane containing the first and second directions, as described in Technical Proposal 1.

[0083] (Technical proposal 3) The capacitive member is a resonator according to Technical Proposal 1 or 2, including a variable capacitance diode.

[0084] (Technical proposal 4) The capacitive member includes a plurality of variable capacitance diodes, The resonator according to technical proposal 1 or 2, wherein the plurality of variable capacitance diodes are connected in parallel between the first extending region and the first opposing region.

[0085] (Technical proposal 5) The resonator according to Technical Proposal 1 or 2, wherein the capacitive member includes a variable capacitance diode and a capacitor connected in series with the variable capacitance diode.

[0086] (Technical proposal 6) It also features a bias circuit, The resonator according to Technical Proposal 5, wherein the bias circuit is configured to control the potential at the connection point between the variable capacitance diode and the capacitor.

[0087] (Technical proposal 7) The first conductive film further includes a first other region, The first other region lies around the first extending region in a first plane intersecting the second direction, The first opposing region is connected to the first other region, and is a resonator according to any one of the technical proposals 1 to 6.

[0088] (Technical proposal 8) The second conductive film includes a second extending region extending along the first direction and a second other region, The direction from the first extending region to the second extending region is along the second direction, The second other region is a resonator according to technical proposal 7, located around the second extending region in the first plane.

[0089] (Technical proposal 9) The resonator according to any one of Technical Proposals 1 to 8, wherein the characteristic impedance of the coaxial circuit including the first conductive film, the second conductive film, and the metal housing is 100 Ω or more.

[0090] (Technical proposal 10) The resonator according to Technical Proposal 1, wherein the first length of the first extending region along the first direction is 1.5 times or more the distance between the first extending region and the side portion.

[0091] (Technical proposal 11) A first conductive film comprising a first extending region extending along a first direction and a first other region, wherein the first extending region includes a first portion and a first other portion, the direction from the first portion to the first other portion is along the first direction, the first portion is connected to the first other region, and the first other region is around the first extending region in a first plane along the first direction, A second conductive film comprising a second extending region extending along the first direction and a second other region, wherein the second extending region includes a second portion and a second other portion, the direction from the second portion to the second other portion is along the first direction, the second portion is connected to the second other region, the second other region is around the second extending region in the first plane, the second other portion is away from the second other region, and the second direction from the first conductive film to the second conductive film intersects the first plane, A dielectric substrate between the first conductive film and the second conductive film, A connecting member that penetrates the dielectric substrate and electrically connects the first conductive film and the second conductive film to each other, A capacitive member between the first other part and the first other region, A resonator equipped with a resonator.

[0092] (Technical proposal 12) A resonator described in one of Technical Proposals 1 to 10, A transmission line configured to connect with the first extended region, A filter circuit is included.

[0093] (Technical proposal 13) The transmission line is in contact with the dielectric substrate and is a filter circuit as described in Technical Proposal 12.

[0094] (Technical proposal 14) The coupling member between the transmission line and the resonator is further provided, The filter circuit according to Technical Proposal 12 or 13, wherein the coupling member includes at least one of a coupling capacitor and a coupling variable capacitance diode.

[0095] (Technical proposal 15) The filter circuit according to technical proposal 12, wherein the transmission line is configured to be electromagnetically coupled with the first extending region.

[0096] (Technical proposal 16) Multiple resonators as described in one of Technical Proposals 1 to 10, Multiple transmission lines, Input / output section, Equipped with, One of the plurality of transmission lines is configured to be coupled to the input / output section and one of the plurality of resonators. Another of the plurality of transmission lines is a filter circuit configured to be coupled with one of the plurality of resonators and another of the plurality of resonators.

[0097] (Technical proposal 17) The coupling member further comprises one of the plurality of transmission lines and one of the plurality of resonators, The filter circuit according to Technical Proposal 16, wherein the coupling member includes at least one of a coupling capacitor and a coupling variable capacitance diode.

[0098] (Technical proposal 18) The coupling member further includes between one of the plurality of transmission lines and one of the plurality of resonators, The filter circuit according to Technical Proposal 16, wherein the coupling member includes at least one of a coupling capacitor and a coupling variable capacitance diode.

[0099] (Technical proposal 19) The filter circuit according to technical proposal 17, wherein the coupling member is connected to one of the open ends of the plurality of resonators.

[0100] (Technical proposal 20) The filter circuit according to technical proposal 16, wherein one of the plurality of transmission lines and one of the plurality of resonators are coupled by electromagnetic field coupling.

[0101] According to the embodiment, a resonator and filter circuit capable of improving characteristics is provided.

[0102] Embodiments of the present invention have been described above with reference to examples. However, the present invention is not limited to these examples. For example, the specific configuration of each element such as conductive films, dielectric substrates, capacitive elements, and control units included in resonators or filter circuits is included within the scope of the present invention as long as those skilled in the art can appropriately select from the known range to implement the present invention and obtain similar effects.

[0103] Combinations of two or more elements from each example, to the extent technically feasible, are also included within the scope of the present invention, insofar as they encompass the gist of the invention.

[0104] All resonator and filter circuits that can be appropriately designed and implemented by those skilled in the art based on the above-described embodiments of the present invention also fall within the scope of the present invention, insofar as they encompass the gist of the present invention.

[0105] Within the scope of the concept of this invention, a person skilled in the art would be able to conceive of various modifications and alterations, and it is understood that such modifications and alterations also fall within the scope of this invention.

[0106] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0107] 10, 20: First and second conductive films, 10S: Structure, 11, 12: First and second extended regions, 11a, 21a: First and second parts, 11b, 21b: First and second other parts, 12, 22: First and second opposing regions, 15, 25: First and second other regions, 31: Capacitive member, 31C: Capacitor, 31D: Variable capacitance diode, 35: Dielectric substrate, 38: Connecting member, 40a: Input section, 40b: Output section, 41: Transmission line, 45: Coupling member, 50: Metal housing, 51, 52: First and second metal parts, 53: Side section, 70: Bias circuit, 110-113, 120: Resonator, 212, 213: Filter circuit, D1-D3: 1st-3rd directions, L1, L3: 1st and 3rd lengths, R1, R2: 1st and 2nd length ratio, Rf1: fluctuation, V1, V2: 1st and 2nd potentials, Zc1: characteristic impedance, dx1, dx2: 1st and 2nd distances

Claims

1. A first conductive film comprising a first extending region extending along a first direction and a first opposing region, The second conductive film is a second direction from the first conductive film to the second conductive film, intersecting the first direction with the second conductive film. A dielectric substrate between the first conductive film and the second conductive film, A connecting member that penetrates the dielectric substrate and electrically connects the first conductive film and the second conductive film to each other, A capacitive member between the first extending region and the first opposing region, A structure that includes, Metal casing, Equipped with, The metal housing includes a first metal portion, a second metal portion, and a side portion. The structure is located between the first metal portion and the second metal portion in the first direction. The aforementioned side portion is a resonator located around the structure in a plane intersecting the first direction.

2. The first length of the first extending region along the first direction is five times or more the third length of the first extending region along the third direction. The resonator according to claim 1, wherein the third direction intersects a plane including the first and second directions.

3. The resonator according to claim 1 or 2, wherein the capacitive member includes a variable capacitance diode.

4. The capacitive member includes a plurality of variable capacitance diodes, The resonator according to claim 1 or 2, wherein the plurality of variable capacitance diodes are connected in parallel between the first extending region and the first opposing region.

5. The resonator according to claim 1 or 2, wherein the capacitive member includes a variable capacitance diode and a capacitor connected in series with the variable capacitance diode.

6. It also features a bias circuit, The resonator according to claim 5, wherein the bias circuit is configured to control the potential at the connection point between the variable capacitance diode and the capacitor.

7. The first conductive film further includes a first other region, The first other region is located around the first extending region in a first plane intersecting the second direction, The resonator according to claim 1 or 2, wherein the first opposing region is connected to the first other region.

8. The second conductive film includes a second extending region extending along the first direction and a second other region, The direction from the first extending region to the second extending region is along the second direction, The resonator according to claim 7, wherein the second other region is located around the second extending region in the first plane.

9. The resonator according to claim 1 or 2, wherein the characteristic impedance of the coaxial circuit including the first conductive film, the second conductive film, and the metal housing is 100 Ω or more.

10. The resonator according to claim 1, wherein the first length of the first extending region along the first direction is 1.5 times or more the distance between the first extending region and the side portion.

11. A first conductive film comprising a first extending region extending along a first direction and a first other region, wherein the first extending region includes a first portion and a first other portion, the direction from the first portion to the first other portion is along the first direction, the first portion is connected to the first other region, and the first other region is around the first extending region in a first plane along the first direction, A second conductive film comprising a second extending region extending along the first direction and a second other region, wherein the second extending region includes a second portion and a second other portion, the direction from the second portion to the second other portion is along the first direction, the second portion is connected to the second other region, the second other region is around the second extending region in the first plane, the second other portion is away from the second other region, and the second direction from the first conductive film to the second conductive film intersects the first plane, A dielectric substrate between the first conductive film and the second conductive film, A connecting member that penetrates the dielectric substrate and electrically connects the first conductive film and the second conductive film to each other, A capacitive member between the first other part and the first other region, A resonator equipped with a resonator.

12. A resonator according to claim 1 or 2, A transmission line configured to connect with the first extended region, A filter circuit is included.

13. The filter circuit according to claim 12, wherein the transmission line is in contact with the dielectric substrate.

14. The coupling member between the transmission line and the resonator is further provided, The filter circuit according to claim 12, wherein the coupling member includes at least one of a coupling capacitor and a coupling variable capacitance diode.

15. The filter circuit according to claim 12, wherein the transmission line is configured to be electromagnetically coupled with the first extending region.

16. A plurality of resonators according to claim 1 or 2, Multiple transmission lines, Input / output section, Equipped with, One of the plurality of transmission lines is configured to be coupled to the input / output section and one of the plurality of resonators. Another of the plurality of transmission lines is configured to be coupled with one of the plurality of resonators and another of the plurality of resonators, in a filter circuit.

17. The coupling member further comprises one of the plurality of transmission lines and one of the plurality of resonators, The filter circuit according to claim 16, wherein the coupling member includes at least one of a coupling capacitor and a coupling variable capacitance diode.

18. The coupling member further includes between one of the plurality of transmission lines and one of the plurality of resonators, The filter circuit according to claim 16, wherein the coupling member includes at least one of a coupling capacitor and a coupling variable capacitance diode.

19. The filter circuit according to claim 17, wherein the coupling member is connected to one open end of the plurality of resonators.

20. The filter circuit according to claim 16, wherein one of the plurality of transmission lines and one of the plurality of resonators are coupled by electromagnetic field coupling.

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