Substrate processing method and substrate processing apparatus

Abstract

The present invention provides a substrate processing method and a substrate processing apparatus that, when dispensing a first processing liquid and a second processing liquid onto a substrate, can prevent the occurrence of processing marks from the first processing liquid in areas of the substrate that are not subject to processing by the first processing liquid. [Solution] In the substrate processing method, the processing liquid discharge nozzle (56) discharges a first processing liquid toward the outer periphery of the substrate (W) at a first discharge position, the processing liquid discharge nozzle (56) stops discharging the first processing liquid at the first discharge position, the processing liquid discharge nozzle (56) waits at the first discharge position for a predetermined time after stopping the discharge of the first processing liquid, and after the processing liquid discharge nozzle (56) waits for a predetermined time, the processing liquid discharge nozzle (56) discharges a second processing liquid toward the outer periphery of the substrate (W) at a second discharge position which is closer to the center of the substrate (W) than the first discharge position.

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing method and apparatus for processing a peripheral edge portion of a substrate with a processing liquid. Herein, the substrate includes semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for plasma displays, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, glass substrates for photomasks, substrates for solar cells, etc. (hereinafter simply referred to as "substrates"). The processing includes etching processing. [Background Art]

[0002] There has been known a substrate processing apparatus that performs chemical processing, cleaning processing and the like by supplying a processing liquid to a peripheral edge portion of a substrate such as a semiconductor wafer while rotating the substrate. For example, in the apparatuses described in Patent Document 1 and Patent Document 2, different processing liquids can be separately discharged to the peripheral edge portion of the substrate, respectively. In particular, in the apparatus described in Patent Document 1, a rinsing liquid is discharged at a position radially inward of the substrate relative to the position where the chemical liquid is discharged. [Prior Art Documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Unexamined Patent Application Publication No. 2015-070019 [Patent Document 2] Japanese Unexamined Patent Application Publication No. 2023-140682 [Summary of the Invention] [Problem to be Solved by the Invention]

[0004] In the apparatus described in Patent Document 1, the nozzle for dispensing the chemical solution and the nozzle for dispensing the rinsing solution move together. Furthermore, when these nozzles move to the position where the rinsing solution is to be dispensed, some chemical solution remains inside the nozzle for dispensing the chemical solution, and the chemical solution falls from inside the nozzle onto the substrate. As a result, the apparatus described in Patent Document 1 has the problem that chemical treatment marks are left on the substrate in areas where the rinsing solution is dispensed, that is, areas that are not targeted for chemical treatment.

[0005] One aspect of this disclosure aims to provide a substrate processing method and a substrate processing apparatus that, when dispensing a first processing liquid and a second processing liquid onto a substrate, can prevent the occurrence of processing marks by the first processing liquid in areas of the substrate that are not subject to processing by the first processing liquid. [Means for solving the problem]

[0006] To solve the above problems, a substrate processing method according to one aspect of the present disclosure is a substrate processing method for discharging a processing liquid toward the outer periphery of a rotating substrate, wherein a processing liquid discharging nozzle discharges a first processing liquid toward the outer periphery of the substrate at a first discharging position, the processing liquid discharging nozzle stops discharging the first processing liquid at the first discharging position, the processing liquid discharging nozzle waits at the first discharging position for a predetermined time after stopping the discharge of the first processing liquid, and the processing liquid discharging nozzle discharges a second processing liquid toward the outer periphery of the substrate at a second discharging position located closer to the center of the substrate than the first discharging position after waiting for the predetermined time.

[0007] In a substrate processing method according to one aspect of the present disclosure, the processing liquid discharge nozzle comprises a first nozzle for discharging the first processing liquid from a first discharge port and a second nozzle for discharging the second processing liquid from a second discharge port, wherein, when viewed from a vertical direction, the first distance between the first discharge port and the center of the substrate may be the same as the second distance between the second discharge port and the center of the substrate.

[0008] In a substrate processing method according to one aspect of this disclosure, the predetermined time may be longer than 0.5 seconds.

[0009] In a substrate processing method according to one aspect of the present disclosure, the first processing solution may be an etching solution for etching the substrate, and the second processing solution may be a cleaning solution for cleaning the substrate.

[0010] In a substrate processing method according to one aspect of the present disclosure, the processing liquid discharge nozzle may be positioned above the substrate.

[0011] In a substrate processing method according to one aspect of the present disclosure, after the processing liquid discharge nozzle stops discharging the first processing liquid, the substrate processing method may perform a suck-back process in which it sucks up the first processing liquid remaining inside the processing liquid discharge nozzle.

[0012] A substrate processing apparatus according to one aspect of the present disclosure comprises a processing liquid discharge nozzle for discharging a processing liquid toward the outer periphery of a rotating substrate, and a control unit for controlling the discharge of the processing liquid by the processing liquid discharge nozzle, wherein the control unit discharges a first processing liquid toward the outer periphery of the substrate at a first discharge position using the processing liquid discharge nozzle, stops discharging the first processing liquid at the first discharge position using the processing liquid discharge nozzle, waits at the first discharge position for a predetermined time after stopping the discharge of the first processing liquid at the processing liquid discharge nozzle, and after waiting for the predetermined time, discharges a second processing liquid toward the outer periphery of the substrate at a second discharge position which is closer to the center of the substrate than the first discharge position using the processing liquid discharge nozzle. [Effects of the Invention]

[0013] According to one aspect of this disclosure, when a first processing liquid and a second processing liquid are discharged onto a substrate, it is possible to prevent the occurrence of processing marks from the first processing liquid in areas of the substrate that are not subject to processing by the first processing liquid. [Brief explanation of the drawing]

[0014] [Figure 1]It is a plan view showing a schematic configuration of a substrate processing system equipped with a processing unit according to an embodiment of the present disclosure. [Figure 2] It is a diagram showing the internal structure of the processing unit shown in FIG. 1. [Figure 3] It is a plan view schematically showing the configuration of a substrate processing unit included in the processing unit shown in FIG. 2. [Figure 4] It is a diagram for explaining the arrangement of nozzles relative to a substrate. [Figure 5] It is a diagram schematically showing the configuration and operation of a nozzle moving unit. [Figure 6] It is a schematic diagram for explaining the configuration of a suck-back mechanism. [Figure 7] It is a flowchart showing bevel processing and cleaning processing executed as an example of a substrate processing operation by the processing unit shown in FIG. 2. [Figure 8] It is a top-view photograph of a substrate showing the result of an etching process in which the substrate is etched, as an example of substrate surface treatment. [Figure 9] It is a diagram schematically showing the configuration and operation of a nozzle moving unit in Modification 4 of the present disclosure. DETAILED DESCRIPTION OF EMBODIMENTS

[0015] (Substrate Processing System) FIG. 1 is a plan view showing a schematic configuration of a substrate processing system 100 equipped with a processing unit 1 according to an embodiment of the present disclosure. This drawing does not show the external appearance of the substrate processing system 100, but is a schematic diagram that clearly shows the internal structure thereof by omitting the outer wall panels and some other components of the substrate processing system 100. The following description is primarily directed to the substrate processing system 100, and also serves as a description of a substrate processing method that discharges a processing liquid toward a peripheral edge (outer circumferential portion) of a substrate W.

[0016] The substrate processing system 100 is, for example, installed in a clean room, and is a single-wafer-type apparatus that processes substrates W on which circuit patterns and the like have been formed one by one. Then, in the processing unit 1 equipped in the substrate processing system 100, substrate processing using a processing liquid is performed.

[0017] In the present embodiment, both main surfaces of the substrate W are referred to as "front surfaces". Further, on the substrate W, the surface facing downward is referred to as a "lower surface", and the surface facing upward is referred to as an "upper surface". In the following description, the processing unit 1 mainly used for processing semiconductor wafers is taken as an example and described with reference to the drawings, but the present invention is also similarly applicable to the processing of other various substrates.

[0018] As shown in FIG. 1, the substrate processing system 100 has a substrate processing area 110 that performs processing on the substrate W. An indexer unit 120 is provided adjacent to this substrate processing area 110. The indexer unit 120 has a container holding unit 121 capable of holding a plurality of containers C for accommodating substrates W.

[0019] The indexer unit 120 is also provided with an indexer robot 122 for accessing the containers C held by the container holding unit 121, taking out unprocessed substrates W from the containers C, and storing processed substrates W into the containers C. In each container C, a plurality of substrates W are accommodated in a substantially horizontal posture.

[0020] The indexer robot 122 includes a base portion 122a fixed to an apparatus housing, an articulated arm 122b provided rotatably around a vertical axis with respect to the base portion 122a, and a hand 122c attached to the distal end of the articulated arm 122b. The hand 122c has a structure capable of placing and holding the substrate W on an upper surface thereof.

[0021] In the substrate processing area 110, a mounting table 112 is provided to allow substrates W from the indexer robot 122 to be placed on it. In a plan view, a substrate transport robot 111 is positioned approximately in the center of the substrate processing area 110. Furthermore, multiple processing units 1 are arranged to surround this substrate transport robot 111.

[0022] Specifically, multiple processing units 1 are arranged facing the space where the substrate transport robot 111 is located. The substrate transport robot 111 randomly accesses the mounting table 112 with respect to these processing units 1 and transfers the substrate W between the robot and the mounting table 112. Meanwhile, each processing unit 1 performs predetermined processing on the substrate W and corresponds to the substrate processing apparatus of this disclosure.

[0023] In this embodiment, these processing units 1 have the same function. Therefore, parallel processing of multiple substrates W is possible. Note that the mounting table 112 is not necessarily required if the substrate transport robot 111 can directly receive the substrates W from the indexer robot 122.

[0024] (Inside the processing unit) Figure 2 shows the internal structure of the processing unit 1 shown in Figure 1. Figure 3 is a schematic plan view showing the configuration of the substrate processing unit SP included in the processing unit 1 shown in Figure 2. In Figure 2, the dimensions and number of each part may be exaggerated or simplified for ease of understanding.

[0025] As shown in Figures 2 and 3, the processing unit 1 has a structure in which a substrate processing unit SP is arranged in the internal space 12 within the chamber 11. The processing unit 1 comprises the substrate processing unit SP and a control unit 10. The processing unit 1 is a device that discharges processing liquid toward the peripheral Ws of a substrate W that rotates within the chamber 11.

[0026] Base support members 16, 16 are fixed to the upper surface of the bottom wall 11a of the chamber 11 by fasteners such as bolts, spaced apart from each other. A base member 17 is fixed to the upper ends of these base support members 16, 16 by fasteners such as bolts. The upper surface of this base member 17 is finished to allow for the installation of a substrate processing unit SP for performing substrate processing on a substrate W, and the substrate processing unit SP is installed on this upper surface. Each part constituting the substrate processing unit SP is electrically connected to a control unit 10 that controls the entire apparatus and operates in accordance with instructions from the control unit 10. The control unit 10 corresponds to the control unit of this disclosure.

[0027] In Figure 1, the processing unit 1 has a transport opening in the side wall facing the substrate transport robot 111, connecting the internal space 12 with the outside of the chamber 11. Therefore, the handle (not shown) of the substrate transport robot 111 can access the substrate processing unit SP through the transport opening. In other words, the transport opening allows for the loading and unloading of substrates W into and out of the internal space 12. A shutter 15 for opening and closing this transport opening is also attached to the side wall.

[0028] A shutter opening / closing mechanism (not shown) is connected to the shutter 15, which opens and closes the shutter 15 in response to an opening / closing command from the control unit 10. More specifically, in the processing unit 1, when an unprocessed substrate W is brought into the chamber 11, the shutter opening / closing mechanism opens the shutter 15, and the unprocessed substrate W is brought into the substrate processing unit SP by the handle of the substrate transport robot 111. In other words, the substrate W is placed on the spin chuck 21 of the substrate processing unit SP with its top surface facing upwards.

[0029] Then, after the substrate is loaded, the hand of the substrate transport robot 111 retracts from the chamber 11, and the shutter opening / closing mechanism closes the shutter 15. Then, within the processing space 12a of the chamber 11, the substrate processing unit SP performs beveling and cleaning on the peripheral Ws of the substrate W. After the beveling and cleaning are completed, the shutter opening / closing mechanism opens the shutter 15 again, and the hand of the substrate transport robot 111 removes the processed substrate W from the substrate processing unit SP.

[0030] (Circuit board processing) The substrate processing unit SP includes a holding and rotating mechanism 2, a splash prevention mechanism 3, an upper surface protection heating mechanism 4, a discharge mechanism 5, and an atmosphere separation mechanism 6. These mechanisms are mounted on a base member 17. The holding and rotating mechanism 2, the splash prevention mechanism 3, the upper surface protection heating mechanism 4, the discharge mechanism 5, and the atmosphere separation mechanism 6 are arranged in a predetermined relative position.

[0031] (Holding and rotating mechanism) The holding and rotating mechanism 2 includes a substrate holding section 2A that holds the substrate W in a substantially horizontal position with one main surface of the substrate W facing upward, and a rotating mechanism 2B that synchronously rotates the substrate holding section 2A holding the substrate W and a part of the anti-scattering mechanism 3. Therefore, when the rotating mechanism 2B is activated in response to a rotation command from the control unit 10, the substrate W and the rotating cup section 31 of the anti-scattering mechanism 3 are rotated around a rotation axis AX that extends parallel to the vertical direction.

[0032] The substrate holding section 2A is equipped with a spin chuck 21, which is a disc-shaped member smaller than the substrate W. The spin chuck 21 corresponds to an example of a holding table in this disclosure and is made of resin. The upper surface of the spin chuck 21 is substantially horizontal, and the spin chuck 21 is positioned so that its central axis coincides with the rotation axis AX.

[0033] The spin chuck 21 is located inside the chamber 11 and supports the substrate W. A cylindrical rotating shaft portion 22 is connected to the lower surface of the spin chuck 21. The rotating shaft portion 22 extends vertically with its axis aligned with the rotation axis AX. A rotating mechanism 2B is also connected to the rotating shaft portion 22.

[0034] The rotating mechanism 2B includes a motor 23 and a power transmission unit 24. The motor 23 generates rotational driving force to rotate the substrate holding unit 2A and the rotating cup unit 31 of the anti-scattering mechanism 3. The power transmission unit 24 transmits the rotational driving force generated by the motor 23 to the rotating shaft unit 22.

[0035] A through-hole (not shown) is provided in the center of the spin chuck 21, and this through-hole communicates with the internal space of the rotating shaft portion 22. A pump 26 is connected to the internal space via piping 25, which has a valve (not shown) interposed therein. The pump 26 and the valve are electrically connected to the control unit 10 and operate in response to commands from the control unit 10. This allows negative pressure and positive pressure to be selectively applied to the spin chuck 21.

[0036] For example, when the substrate W is placed on the upper surface of the spin chuck 21 in a nearly horizontal position and the pump 26 applies negative pressure to the spin chuck 21, the spin chuck 21 will hold the substrate W by suction from below. On the other hand, when the pump 26 applies positive pressure to the spin chuck 21, the substrate W becomes removable from the upper surface of the spin chuck 21. Also, when the pump 26 stops suction, the substrate W becomes able to move horizontally on the upper surface of the spin chuck 21.

[0037] A nitrogen gas supply unit 29 is connected to the spin chuck 21 via a pipe 28 located in the center of the rotating shaft portion 22. The nitrogen gas supply unit 29 supplies ambient temperature nitrogen gas, supplied from a utility in the factory where the substrate processing system 100 is installed, to the spin chuck 21 at a flow rate and timing corresponding to the gas supply command from the control unit 10. As a result, the nitrogen gas supply unit 29 circulates the nitrogen gas radially outward from the center on the underside of the substrate W. In this embodiment, nitrogen gas is used, but other inert gases may also be used.

[0038] The rotating mechanism 2B not only rotates the spin chuck 21 integrally with the substrate W, but also has a power transmission unit 27 to rotate the rotating cup portion 31 in synchronization with the rotation. The power transmission unit 27 has an annular member 27a made of a non-magnetic material or resin, a spin chuck-side magnet 27b built into the annular member 27a, and a cup-side magnet 27c built into the lower cup 32, which is a component of the rotating cup portion 31.

[0039] The annular member 27a is attached to the rotating shaft portion 22 and is rotatable together with the rotating shaft portion 22 around the rotating shaft AX. The lower cup 32 is positioned concentrically with the rotating shaft portion 22 and the annular member 27a, with the inner circumferential surface of the lower cup 32 separated from the outer circumferential surface of the annular member 27a by a predetermined distance.

[0040] An engagement pin and a connecting magnet (not shown) are provided on the upper outer edge of the lower cup 32, and these connect the upper cup 33 to the lower cup 32, and this connecting body functions as a rotating cup portion 31. The lower cup 32 is supported on the upper surface of the base member 17 by a bearing (not shown) so as to be rotatable around the rotation axis AX.

[0041] When the motor 23 rotates the annular member 27a together with the rotating shaft 22, the magnetic force between the spin chuck-side magnet 27b and the cup-side magnet 27c causes the lower cup 32 to rotate in the same direction as the annular member 27a while maintaining an air gap with the annular member 27a. As a result, the rotating cup portion 31 rotates around the rotation axis AX. In other words, the rotating cup portion 31 rotates in the same direction as the substrate W and in synchronization with it.

[0042] (Scatter prevention mechanism) The splash prevention mechanism 3 includes a rotating cup portion 31 that can rotate around the rotation axis AX while surrounding the outer circumference of the substrate W held by the spin chuck 21, and a fixed cup portion 34 that is fixedly provided to surround the rotating cup portion 31. The rotating cup portion 31 is provided so as to be able to rotate around the rotation axis AX while surrounding the outer circumference of the rotating substrate W, by connecting the upper cup 33 to the lower cup 32. The droplets collected by the rotating cup portion 31 are recovered together with the gaseous components and collected in the fixed cup portion 34.

[0043] (Top protection heating mechanism) The top surface protection heating mechanism 4 comprises a disc portion 42, an internal heater 421, a heater drive unit 422, a support member 404, and a heating gas supply unit 47, and corresponds to an example of a heater of this disclosure. The disc portion 42 is positioned opposite the substrate W placed on the spin chuck 21. That is, the disc portion 42 is positioned above the upper surface of the substrate W held by the spin chuck 21 and is held in a horizontal position.

[0044] The disc portion 42 incorporates an internal heater 421 that is driven and controlled by a heater drive unit 422. The disc portion 42 has a diameter slightly shorter than that of the substrate W. The disc portion 42 is supported by a support member 404 such that its lower surface covers the upper surface area of ​​the substrate W, excluding the peripheral edge Ws, from above.

[0045] The lower end of the support member 404 is attached to the center of the disc portion 42. A cylindrical through hole (not shown) is formed so as to penetrate vertically through the support member 404 and the disc portion 42. A central nozzle 45 is inserted vertically through this through hole. This central nozzle 45 is connected to a heating gas supply unit 47 via a pipe 46.

[0046] The heating gas supply unit 47 heats ambient temperature nitrogen gas supplied from the factory where the substrate processing system 100 is installed using a heater 471, and supplies it to the substrate W at a flow rate and timing corresponding to the heating gas supply command from the control unit 10. A ribbon heater 48 is attached to a part of the piping 46. The ribbon heater 48 generates heat in response to the heating command from the control unit 10, heating the nitrogen gas flowing through the piping 46.

[0047] The heated nitrogen gas (hereinafter referred to as "heated gas") is then pumped towards the central nozzle 45 and discharged from the central nozzle 45. For example, when the heated gas is supplied with the disc portion 42 positioned in a processing position close to the substrate W held by the spin chuck 21, the heated gas flows from the center of the space between the upper surface of the substrate W and the disc portion 42 toward the periphery.

[0048] The upper end of the support member 404 is fixed to a beam member 49 that extends horizontally. This beam member 49 is connected to a lifting mechanism (not shown) attached to the upper surface of the base member 17, and is raised and lowered by the lifting mechanism in response to commands from the control unit 10. For example, in Figure 2, when the beam member 49 is positioned downward, the disc portion 42 connected to the beam member 49 via the support member 404 is positioned in the processing position.

[0049] On the other hand, when the lifting mechanism receives a lifting command from the control unit 10 and raises the beam member 49, the disc portion 42, beam member 49, and support member 404 rise together, and the upper cup 33 also rises in conjunction, separating from the lower cup 32. As a result, the space between the spin chuck 21 and the upper cup 33 and disc portion 42 widens, making it possible to load and unload the substrate W into and out of the spin chuck 21.

[0050] (Discharge mechanism) As shown in the partially enlarged views of Figures 2 and 3, the discharge mechanism 5 comprises a processing liquid discharge nozzle 56, 51D, a nozzle moving unit 54, and a processing liquid supply unit 52. The processing liquid discharge nozzle 56 is a nozzle head having nozzles 51A, 51B, 51C and a nozzle holder 53. The processing liquid discharge nozzle 56 is positioned above the substrate W, and the processing liquid discharge nozzle 51D is positioned below the substrate W.

[0051] The discharge mechanism 5 may consist of only the nozzle moving part 54 and the discharge nozzle 56, or only the discharge nozzle 51D, from among the discharge nozzle 51D, the nozzle moving part 54, and the discharge nozzle 56.

[0052] The processing liquid supply unit 52 supplies processing liquid to nozzles 51A to 51D. Nozzle 51D refers to the processing liquid discharge nozzle 51D, and hereafter, the processing liquid discharge nozzle 51D will be referred to as nozzle 51D. The calculation processing unit 10A controls the discharge of processing liquid by nozzles 51A to 51D by controlling the processing liquid supply unit 52. Nozzles 51A to 51D discharge processing liquid toward the peripheral Ws of the rotating substrate W. In Figure 2, two processing liquid supply units 52 are shown, but they are identical.

[0053] In this embodiment, three nozzles 51A to 51C are provided, and a processing liquid supply unit 52 is connected to them. The processing liquid supply unit 52 is configured to supply chemical solutions such as SC1 and DHF, as well as rinse liquid, as processing liquids, and SC1, DHF, and rinse liquid can be discharged independently from the three nozzles 51A to 51C.

[0054] The chemicals SC1 and DHF are etching solutions for etching the substrate W, and the rinsing solution is a cleaning solution for cleaning the substrate W. The rinsing solution is pure water, such as deionized water (DIW). The rinsing solution may also be functional water such as CO2 water. The direction in which each of the nozzles 51A to 51C discharges the processing solution may be the same, and the internal pressure of the nozzles 51A to 51C may also be the same.

[0055] (Nozzle placement) Figure 4 is a diagram illustrating the arrangement of nozzles 51A to 51C on the substrate W. Figure 4 also shows the substrate W and nozzles 51A to 51C viewed from above. For ease of understanding, components other than the substrate W and nozzles 51A to 51C are omitted in Figure 4. A discharge port 511A for discharging the processing liquid is formed on the lower surface of the tip of nozzle 51A. Similarly, a discharge port 511B for discharging the processing liquid is formed on the lower surface of the tip of nozzle 51B, and a discharge port 511C for discharging the processing liquid is formed on the lower surface of the tip of nozzle 51C.

[0056] Then, as shown in the enlarged view of Figure 3, the nozzle 51A is positioned with the outlet 511A facing the upper surface of the peripheral edge Ws on the substrate W, and the lower part of the nozzle 51A is positioned in the notch 425 of the disc portion 42. Similarly, the nozzle 511B is positioned with the outlet 511B facing the upper surface of the peripheral edge Ws, and the lower part of the nozzle 51C is positioned in the notch 425 with the outlet 511C facing the upper surface of the peripheral edge Ws. The nozzle 51A discharges SC1 from the outlet 511A, the nozzle 51B discharges DHF from the outlet 511B, and the nozzle 51C discharges rinse liquid from the outlet 511C.

[0057] As shown in Figure 4, when viewed from the vertical, the distance DS1 between the discharge port 511A and the center CT of the substrate W is the same as the distance DS2 between the discharge port 511B and the center CT of the substrate W. Also, when viewed from the vertical, the distance DS2 is the same as the distance DS3 between the discharge port 511C and the center CT of the substrate W.

[0058] Distances DS1 to DS3 are distances along the radial direction D1 of the substrate W. The vertical direction is the direction perpendicular to the spin chuck 21. When viewed from the vertical direction, the discharge ports 511A to 511C are arranged on the same circumference centered on the central point CT. This allows the arrangement of nozzles 51A to 51C to follow the shape of the peripheral edge Ws of the substrate W, thereby reducing the space required for the processing liquid discharge nozzle 56 to move.

[0059] Nozzles 51A and 51B correspond to examples of the first nozzles of this disclosure, and nozzle 51C corresponds to an example of the second nozzle of this disclosure. In this case, SC1 and DHF correspond to examples of the first processing liquids of this disclosure, and discharge ports 511A and 511B correspond to examples of the first discharge ports of this disclosure. Furthermore, the rinsing liquid corresponds to an example of the second processing liquids of this disclosure, and discharge port 511C corresponds to an example of the second discharge port of this disclosure. In addition, distances DS1 and DS2 correspond to examples of the first distances of this disclosure, and distance DS3 corresponds to an example of the second distances of this disclosure.

[0060] Furthermore, any two of the nozzles 51A to 51C may correspond to an example of the first nozzle of this disclosure, and the remaining nozzle may correspond to an example of the second nozzle of this disclosure. Alternatively, any one of the nozzles 51A to 51C may correspond to an example of the first nozzle of this disclosure, and the remaining two nozzles may correspond to an example of the second nozzle of this disclosure. In this case, the first nozzle discharges the first processing liquid from the first discharge port, and the second nozzle discharges the second processing liquid from the second discharge port. The first distance is the distance between the first discharge port and the center CT of the substrate W, and the second distance is the distance between the second discharge port and the center CT of the substrate W.

[0061] As shown in the enlarged view of Figure 3, the upper parts of nozzles 51A to 51C are fixed to the nozzle holder 53. This nozzle holder 53 is connected to the nozzle moving part 54. The nozzle moving part 54 is attached to a lifting mechanism, which moves the nozzle moving part 54 in the vertical direction Z.

[0062] In this embodiment, as shown in Figure 2, a nozzle 51D and a nozzle support portion 57 are provided below the substrate W held by the spin chuck 21 in order to discharge the processing liquid toward the lower surface of the peripheral portion Ws of the substrate W. The nozzle support portion 57 has a thin-walled cylindrical portion 571 that extends vertically and a flange portion 572 that has an annular shape and is folded radially outward at the upper end of the cylindrical portion 571.

[0063] The cylindrical portion 571 has a shape that allows it to be freely inserted into the air gap formed between the annular member 27a and the lower cup 32. The nozzle support portion 57 is fixedly positioned such that the cylindrical portion 571 is freely inserted into the air gap and the flange portion 572 is positioned between the substrate W held by the spin chuck 21 and the lower cup 32.

[0064] Three nozzles (not shown) of the nozzle 51D are attached to the upper peripheral edge of the flange portion 572. Each nozzle of the nozzle 51D has a discharge port (not shown) that opens toward the lower surface of the peripheral edge Ws of the substrate W, and is capable of discharging the processing liquid supplied from the processing liquid supply unit 52 via the piping 58.

[0065] Nozzle 51D may have the same structure as the processing liquid discharge nozzle 56. Specifically, the three nozzles of nozzle 51D may have the same structure as nozzles 51A to 51C, and may have the same functions as nozzles 51A to 51C. The descriptions of nozzles 51A to 51C also apply to the three nozzles of nozzle 51D.

[0066] (Movement of the nozzle) Figure 5 is a schematic diagram showing the configuration and operation of the nozzle moving section 54. Reference numeral 501 in Figure 5 is a schematic diagram showing the home position P0, reference numeral 502 in Figure 5 is a schematic diagram showing the first discharge position P2, and reference numeral 503 in Figure 5 is a schematic diagram showing the second discharge position P3. In Figure 5, the home position of the discharge port 511A in the nozzle 51A is indicated by P0, the end face position of the substrate W is indicated by P1, the first discharge position of the discharge port 511A is indicated by P2, and the second discharge position of the discharge port 511A is indicated by P3.

[0067] As shown in Figure 5, the nozzle moving section 54 is equipped with a linear actuator 542. The linear actuator 542 has a nozzle drive motor 543 and a motion conversion mechanism 545. The motion conversion mechanism 545 converts the rotational motion of a rotating body, such as a ball screw connected to the rotating shaft of the nozzle drive motor 543, into linear motion, causing the slider 544 to reciprocate in the radial direction D1.

[0068] A head support member 547 is connected to the slider 544 via a connecting member 546. The head support member 547 has a rod shape extending in the radial direction D1. A processing liquid discharge nozzle 56 is attached to the end of the head support member 547 opposite to the connecting member 546 side.

[0069] When the nozzle drive motor 543 rotates in response to a processing liquid supply command from the control unit 10, the slider 544, head support member 547, and processing liquid discharge nozzle 56 move integrally in the radial direction D1. As a result, the nozzles 51A to 51C of the processing liquid discharge nozzle 56 are positioned in the radial direction D1. When the processing liquid discharge nozzle 56 moves, the distances DS1 to DS3 shown in Figure 4 are maintained to be the same distance from each other.

[0070] In this manner, the nozzle moving unit 54 moves the three nozzles 51A to 51C together in the radial direction D1. As a result, beveling and cleaning processes are performed while the nozzles 51A to 51C move back and forth. Furthermore, the mechanism for moving the nozzles 51A to 51C in the nozzle moving unit 54 can be simplified.

[0071] On the other hand, when no processing liquid supply command is given for any of the three types of processing liquids, the processing liquid discharge nozzle 56 is retracted to a sufficient distance from the end face of the substrate W. Specifically, as shown by reference numeral 501 in Figure 5, the discharge port 511A of nozzle 51A is positioned at a preset home position P0. Discharge ports 511B and 511C are also positioned at the home position P0.

[0072] At this time, the spring member 548 provided in the motion conversion mechanism 545 is compressed by the slider 544, applying a biasing force to the slider 544 in the direction of the substrate W in the radial direction D1. When a processing liquid supply command is given to SC1, the nozzles 51A to 51C move together from the home position P0 in the direction of the substrate W in the radial direction D1.

[0073] Then, as shown by reference numeral 502 in Figure 5, nozzles 51A to 51C move to the first discharge position P2 via the end face position P1. That is, the discharge ports 511A to 511C are positioned at the first discharge position P2. The first discharge position P2 is located at a distance dt1 from the end face position P1 in the radial direction D1 toward the substrate W. The distance dt1 is, for example, 1.0 mm. Nozzle 51A discharges SC1 toward the peripheral edge Ws of the substrate W at the first discharge position P2.

[0074] Subsequently, when a processing liquid supply command is given for the rinsing liquid, the nozzles 51A to 51C move together from the first discharge position P2 in the radial direction D1 toward the substrate W side. Then, as shown by reference numeral 503 in Figure 5, the nozzles 51A to 51C move to the second discharge position P3. In other words, the discharge ports 511A to 511C are positioned at the second discharge position P3.

[0075] The second discharge position P3 is located at a distance dt2 from the end face position P1 in the radial direction D1 toward the substrate W. The distance dt2 is, for example, 2.1 mm, which is longer than the distance dt1. In other words, the second discharge position P3 is located closer to the center CT of the substrate W than the first discharge position P2. At the second discharge position P3, the nozzle 51C discharges the rinsing liquid toward the peripheral edge Ws of the substrate W.

[0076] Once the forward movement of the processing liquid discharge nozzle 56 is complete, the return movement is executed. In other words, the processing liquid discharge nozzle 56 moves along the reverse path of the forward movement. During the return movement, the processing liquid discharge nozzle 56 moves continuously from the second discharge position P3 to the home position P0.

[0077] (Suck-back mechanism) Figure 6 is a schematic diagram illustrating the configuration of the suck-back mechanisms SB12, SB22, and SB32. The substrate processing unit SP may further include the suck-back mechanisms SB12 to SB32. The suck-back mechanisms SB12 to SB32 may be, for example, of the diaphragm type.

[0078] In this case, the suck-back valves (not shown) included in the suck-back mechanisms SB12 to SB32 have diaphragms that change the volume of the flow path through which the processing liquid flows by deforming. When the volume of the flow path increases, the pressure in the flow path decreases instantaneously, and a suction force acts on the processing liquid remaining near the discharge ports 511A to 511C. Note that the suck-back mechanisms SB12 to SB32 may also be siphon-type mechanisms that perform suck-back using the principle of siphon.

[0079] The suck-back mechanism SB12 sucks back (retracts) the tip surface of SC1 from the discharge port 511A of nozzle 51A after the discharge of SC1 from nozzle 51A has stopped. This will be explained in detail below. The suction pipe SB11 connects the supply pipe P11 for supplying SC1 to nozzle 51A and the suck-back mechanism SB12.

[0080] A portion of the suction piping SB11 is located inside the chamber 11. The suck-back mechanism SB12 is located outside the chamber 11. One end of the suction piping SB11 is connected to the supply piping P11 between the nozzle 51A and the processing liquid supply unit 52. The supply piping P11 is equipped with a supply control valve V1, which controls the start and stop of the supply of SC1 via the supply piping P11. After the supply of SC1 is stopped by the closing of the supply control valve V1, the suck-back mechanism SB12 sucks up any SC1 remaining inside the nozzle 51A and the supply piping P11.

[0081] The suck-back mechanism SB22, like the suck-back mechanism SB12, sucks back the tip surface of the DHF from the nozzle 51B's discharge port 511B after the discharge of DHF from the nozzle 51B has stopped. The suction pipe SB21 connects the supply pipe P12 for supplying DHF to the nozzle 51B with the suck-back mechanism SB22. The supply pipe P12 is equipped with a supply control valve V2, which controls the start and stop of the supply of DHF via the supply pipe P12.

[0082] The suck-back mechanism SB32, like the suck-back mechanism SB12, sucks back the leading surface of the rinse liquid from the nozzle 51C's discharge port 511C after the discharge of the rinse liquid from the nozzle 51C has stopped. The suction pipe SB31 connects the supply pipe P13 for supplying rinse liquid to the nozzle 51C with the suck-back mechanism SB32. The supply pipe P13 is equipped with a supply control valve V3, which controls the start and stop of the supply of rinse liquid via the supply pipe P13. The supply control valves V1 to V3 are included in the processing liquid supply unit 52.

[0083] (Atmosphere separation mechanism) As shown in Figure 2, the atmosphere separation mechanism 6 separates the internal space 12 within the chamber 11 into a processing space 12a where beveling and cleaning processes on the substrate W can be performed, and an outer space 12b of the processing space 12a. The atmosphere separation mechanism 6 is positioned to completely surround the spin chuck 21, the substrate W held by the spin chuck 21, the rotating cup portion 31, and the upper surface protection heating mechanism 4 from above. The atmosphere separation mechanism 6 has a lower sealing cup member 61 and an upper sealing cup member 62. The lower sealing cup member 61 is provided so as to be movable in the vertical direction.

[0084] As the lower sealing cup member 61 descends and is positioned at its lower limit, the upper sealing cup member 62, the lower sealing cup member 61, and the fixed cup portion 34 are connected in the vertical direction. Thus, the upper sealing cup member 62, the lower sealing cup member 61, and the fixed cup portion 34 form a processing space 12a.

[0085] Furthermore, as the lower sealing cup member 61 rises and moves to the retracted position, the upper cup 33 also rises together with it by engaging with the lower sealing cup member 61. This causes the upper cup 33 and the upper surface protection heating mechanism 4 to move upward away from the spin chuck 21. The movement of the lower sealing cup member 61 to the retracted position creates a transport space for the hand of the substrate transport robot 111 to access the spin chuck 21.

[0086] (Control unit) The control unit 10 includes an arithmetic processing unit 10A, a storage unit 10B, a reading unit 10C, a drive control unit 10D, and a communication unit 10E. The storage unit 10B is composed of a hard disk drive or the like and stores a program for the processing unit 1 to perform beveling and cleaning processes.

[0087] The program is stored, for example, on a computer-readable recording medium RM (e.g., optical disk, magnetic disk, magneto-optical disk, etc.), read from the recording medium RM by the reading unit 10C, and stored in the storage unit 10B. Furthermore, the provision of the program is not limited to the recording medium RM; for example, the program may be provided via a telecommunications line. The drive control unit 10D controls each drive unit of the processing unit 1. The communication unit 10E is for the arithmetic processing unit 10A to communicate with the substrate transport robot 111.

[0088] The arithmetic processing unit 10A is composed of a computer having a CPU (Central Processing Unit) and RAM (Random Access Memory), and controls each part of the processing unit 1 according to the program stored in the memory unit 10B, and performs beveling and cleaning processes. The beveling and cleaning processes performed by the processing unit 1 will be described below with reference to Figure 7.

[0089] (Circuit board processing operation) Figure 7 is a flowchart showing a beveling and cleaning process performed as an example of substrate processing operation by the processing unit 1 shown in Figure 2. First, the arithmetic processing unit 10A loads the substrate W (S1). Specifically, the arithmetic processing unit 10A requests the substrate transport robot 111 to load the substrate W via the communication unit 10E and waits until the unprocessed substrate W is brought into the processing unit 1 and placed on the upper surface of the spin chuck 21. Then, the substrate W is placed on the spin chuck 21. At this point, the pump 26 is stopped, and the substrate W is able to move horizontally on the upper surface of the spin chuck 21.

[0090] When the substrate W is placed on the upper surface of the spin chuck 21, the substrate transport robot 111 retracts from the processing unit 1. Subsequently, the arithmetic processing unit 10A uses the centering mechanism (not shown) provided by the substrate processing unit SP to center the substrate W. This eliminates the eccentricity of the substrate W relative to the spin chuck 21, so that the center of the substrate W coincides with the center of the spin chuck 21. After centering the substrate W, the arithmetic processing unit 10A operates the pump 26 to apply negative pressure to the spin chuck 21. As a result, the spin chuck 21 attracts and holds the substrate W from below.

[0091] Next, the arithmetic processing unit 10A prepares for the discharge of the processing liquid (S2). Specifically, the arithmetic processing unit 10A gives a downward command to the lifting mechanism (not shown). In response, the lifting mechanism lowers the lower sealing cup member 61, the processing liquid discharge nozzle 56, the beam member 49, and the upper surface protection heating mechanism 4 together. During this downward movement, the upper cup 33 is connected to the lower cup 32. This forms the rotating cup portion 31.

[0092] In this state, the lower surface of the disc portion 42 covers the upper surface area of ​​the substrate W, excluding the peripheral edge Ws, from above. Also, the nozzles 51A to 51C are positioned within the notch 425 of the disc portion 42 with their discharge ports 511A to 511C facing the upper surface of the peripheral edge Ws on the substrate W.

[0093] After the nozzles 51A to 51C are positioned, the calculation processing unit 10A issues a rotation command to the motor 23, and the spin chuck 21 and rotating cup section 31 that hold the substrate W begin to rotate. The rotation speed of the substrate W and the rotating cup section 31 is set to, for example, 1800 revolutions per minute.

[0094] Next, the arithmetic processing unit 10A preheats the substrate W (S3). Specifically, the arithmetic processing unit 10A controls the heater drive unit 422 to raise the internal heater 421 to the desired temperature. The arithmetic processing unit 10A also issues a heating gas supply command to the heating gas supply unit 47. As a result, nitrogen gas heated by the heater 471, i.e., the heating gas, is pumped from the heating gas supply unit 47 towards the substrate W. This heating gas is heated by the ribbon heater 48 as it passes through the piping 46.

[0095] As a result, the heating gas is supplied to the top surface protection heating mechanism 4 while preventing a temperature drop during gas supply via the piping 46. In the top surface protection heating mechanism 4, the heating gas is heated by the internal heater 421. The heated gas is then discharged towards the space sandwiched between the substrate W and the disc portion 42 near the peripheral edge Ws of the substrate W. Therefore, the upper surface of the peripheral edge Ws of the substrate W is heated intensively.

[0096] Furthermore, the peripheral Ws of the substrate W are also heated by the internal heater 421. As a result, the temperature of the peripheral Ws of the substrate W rises over time, reaching a temperature suitable for beveling, for example, 90°C. In addition, the temperature of areas other than the peripheral Ws also rises to approximately the same temperature due to the heat from the internal heater 421. In other words, in this embodiment, the in-plane temperature of the upper surface of the substrate W is approximately uniform.

[0097] The arithmetic processing unit 10A heats the substrate W with the internal heater 421 and then processes the peripheral Ws of the substrate W with the first processing liquid (S4). Specifically, the arithmetic processing unit 10A moves the nozzles 51A to 51C to a position where the discharge ports 511A to 511C are positioned above the peripheral Ws of the substrate W. In other words, the arithmetic processing unit 10A moves the discharge ports 511A to 511C to the first discharge position P2 shown by reference numeral 502 in Figure 5.

[0098] Then, the arithmetic processing unit 10A issues a command to the processing liquid supply unit 52 to start supplying SC1, and opens the supply control valve V1 to supply SC1 to the nozzle 51A. In other words, the liquid flow of SC1 is discharged from the nozzle 51A so as to hit the upper surface of the peripheral edge Ws of the substrate W. This performs beveling on the peripheral edge Ws of the substrate W.

[0099] At this time, the processing unit 10A uses the nozzle 51A to discharge SC1 towards the peripheral edge Ws of the substrate W at the first discharge position P2.

[0100] Next, the arithmetic processing unit 10A stops the discharge of the first processing liquid (S5). Specifically, the arithmetic processing unit 10A gives a command to the processing liquid supply unit 52 to stop supplying SC1 and closes the supply control valve V1, thereby stopping the discharge of SC1 at the first discharge position P2 in the nozzle 51A. At this time, the nozzle 51A stops discharging SC1 at the first discharge position P2.

[0101] The arithmetic processing unit 10A waits for a first time at the first discharge position P2 after stopping the discharge of SC1 at the nozzle 51A (S6). In other words, after the nozzle 51A stops discharging SC1, it waits for a first time at the first discharge position P2. The first time corresponds to a predetermined time in this disclosure, for example, 1.0 second. The first time is, for example, the time from when the arithmetic processing unit 10A issues a command to stop supplying SC1 until the processing liquid discharge nozzle 56 starts moving.

[0102] The arithmetic processing unit 10A waits for one hour, then moves the processing liquid discharge nozzle 56 (S7). Specifically, the arithmetic processing unit 10A moves the processing liquid discharge nozzle 56 from the first discharge position P2 to the second discharge position P3. At this time, nozzles 51A to 51C wait for one hour, then move from the first discharge position P2 to the second discharge position P3. In other words, discharge ports 511A to 511C move from the first discharge position P2 to the second discharge position P3.

[0103] The arithmetic processing unit 10A processes the peripheral Ws of the substrate W with the second processing liquid (S8). Specifically, the arithmetic processing unit 10A issues a command to the processing liquid supply unit 52 to start supplying the rinsing liquid, and opens the supply control valve V3 to supply the rinsing liquid to the nozzle 51C. In other words, the flow of rinsing liquid is discharged from the nozzle 51C so as to hit the upper surface of the peripheral Ws of the substrate W.

[0104] This performs a cleaning process on the peripheral Ws of the substrate W. At this time, the arithmetic processing unit 10A discharges rinsing liquid from the nozzle 51C toward the peripheral Ws of the substrate W at the second discharge position P3. The nozzle 51C also discharges rinsing liquid toward the peripheral Ws of the substrate W at the second discharge position P3. The arithmetic processing unit 10A may start the processes of step S7 and step S8 simultaneously.

[0105] Here, the inner diameter of nozzles 51A to 51D is, for example, 0.2 mm. As such, the inner diameter of nozzle 51A is small, and the pressure of SC1 inside nozzle 51A becomes high. Therefore, it takes time from the time the calculation processing unit 10A gives a command to stop supplying SC1 to the processing liquid supply unit 52 until nozzle 51A completely discharges SC1.

[0106] Therefore, the arithmetic processing unit 10A waits for one hour in step S6. While the processing liquid discharge nozzle 56 is waiting for one hour, any SC1 remaining inside the nozzle 51A is discharged to the outside of the nozzle 51A. This prevents the formation of SC1 processing traces on the substrate W where the rinsing liquid is discharged in step S8. In other words, it prevents SC1 processing traces from forming on areas that are not subject to SC1 processing.

[0107] Furthermore, when viewed from the vertical, the distance DS1 between the discharge port 511A and the center CT of the substrate W is the same as the distance DS2 between the discharge port 511C and the center CT of the substrate W. Therefore, when the nozzle 51C discharges the rinse liquid at the second discharge position P3, the discharge port 511A of the nozzle 51A is positioned opposite the location on the substrate W where the rinse liquid is discharged. In this case, SC1 can be prevented from adhering to the location on the substrate W where the rinse liquid is discharged.

[0108] In step S6, it is preferable that the first time be longer than 0.5 seconds. This allows the SC1 remaining inside the nozzle 51A to be discharged to the outside of the nozzle 51A by waiting at the first discharge position P2 for a longer time than 0.5 seconds after the nozzle 51A stops discharging SC1 in step S5.

[0109] Furthermore, SC1 is an etching solution for etching the substrate W, and the rinse solution is a cleaning solution for cleaning the substrate W. Therefore, it is possible to prevent the etching solution from adhering to the areas on the substrate W where the rinse solution is discharged, thereby preventing etching marks from being created by the etching solution. In other words, it is possible to prevent etching marks from being created in areas that are not to be etched by the etching solution.

[0110] Furthermore, since the processing liquid discharge nozzle 56 is positioned above the substrate W, while the processing liquid discharge nozzle 56 is waiting for the first hour, any SC1 remaining inside the nozzle 51A falls from the nozzle 51A onto the substrate W. This prevents SC1 from falling onto the area on the substrate W where the rinsing liquid is discharged.

[0111] After step S8, the arithmetic processing unit 10A detects the elapsed processing time required for the beveling and cleaning processes of the substrate W and terminates the surface treatment of the substrate W (S9). Specifically, the arithmetic processing unit 10A issues a command to the processing liquid supply unit 52 to stop supplying the rinse liquid and closes the supply control valve V3, thereby stopping the discharge of the rinse liquid from the nozzle 51C.

[0112] Subsequently, the arithmetic processing unit 10A issues a command to stop supplying the heating gas to the heating gas supply unit 47, stopping the supply of heating gas from the heating gas supply unit 47 to the substrate W. The arithmetic processing unit 10A also issues a command to stop rotation to the motor 23, stopping the rotation of the spin chuck 21 and the rotating cup unit 31. Furthermore, the arithmetic processing unit 10A controls the heater drive unit 422 to stop the internal heater 421.

[0113] Next, the arithmetic processing unit 10A observes the peripheral Ws of the substrate W to inspect the result of the beveling process (S10). Specifically, the arithmetic processing unit 10A positions the upper cup 33 in a retracted position, similar to when the substrate W is loaded, to form a transport space. Then, the arithmetic processing unit 10A controls the observation head drive unit (not shown) to bring the observation head (not shown) closer to the substrate W.

[0114] The processing unit 10A illuminates the peripheral Ws of the substrate W via the observation head by turning on the light source unit (not shown). The imaging unit (not shown) receives the reflected light reflected from the peripheral Ws and adjacent areas and images the peripheral Ws and adjacent areas. In other words, while the substrate W is rotating around the rotation axis AX, the imaging unit acquires a peripheral image of the peripheral Ws along the rotation direction of the substrate W from multiple images of the peripheral Ws acquired by the imaging unit.

[0115] Then, the arithmetic processing unit 10A controls the observation head drive unit to retract the observation head from the substrate W. In parallel with this, the arithmetic processing unit 10A checks whether the beveling process has been performed well, based on the captured peripheral Ws and adjacent region images, i.e., the peripheral image. In this embodiment, as an example of this check, the processing width processed by the processing liquid from the edge face of the substrate W toward the central CT of the substrate W is checked from the peripheral image.

[0116] After inspection, the arithmetic processing unit 10A sends an unloading request for the substrate W to the substrate transport robot 111 via the communication unit 10E, and the processed substrate W is discharged from the processing unit 1 (S11). This series of steps is repeated.

[0117] (Result of etching process) Figure 8 shows an example of surface treatment of substrate W, specifically the result of etching the substrate W, and is a photograph of the substrate W taken from above. Reference numeral 801 in Figure 8 shows a photograph of the result of etching the substrate W without performing step S6, that is, without waiting for 1 hour after stopping the ejection of SC1. Reference numeral 802 in Figure 8 shows a photograph of the result of etching the substrate W after performing step S6, that is, after waiting for 1 hour after stopping the ejection of SC1.

[0118] In Figure 8, W1 indicates areas on the substrate W where etching has been performed, and W2 indicates areas where the film remains and was not etched. As shown by reference numeral 801 in Figure 8, when the etching process on the substrate W was performed without waiting for the first time, etching marks W3 caused by SC1 were generated in the areas W2 that were not etched. The reason for the occurrence of etching marks W3 is that at the second discharge position P3, SC1 remaining inside the nozzle 51A fell from the nozzle 51A onto the substrate W.

[0119] On the other hand, as shown by reference numeral 802 in Figure 8, by waiting for one hour after stopping the discharge of SC1 and then performing the etching process on the substrate W, it was possible to prevent etching marks W3 from being formed in areas W2 that were not to be etched. This is because, while the processing liquid discharge nozzle 56 was waiting for one hour, the SC1 remaining inside the nozzle 51A fell from the nozzle 51A onto the substrate W at the first discharge position P2, and therefore did not fall from the nozzle 51A onto the substrate W at the second discharge position P3.

[0120] (Variation 1) The arithmetic processing unit 10A may perform a suck-back process in step S5, simultaneously with the processing liquid discharge nozzle 56 stopping the discharge of the first processing liquid, by sucking up any remaining first processing liquid inside the processing liquid discharge nozzle 56. Specifically, the arithmetic processing unit 10A may, simultaneously with the nozzle 51A stopping the discharge of SC1 in step S5, use the suck-back mechanism SB12 to suck up any remaining SC1 inside the nozzle 51A and the supply piping P11. At this time, the arithmetic processing unit 10A gives a command to the processing liquid supply unit 52 to stop supplying SC1, and at the same time gives a suck-back command to the suck-back mechanism SB12.

[0121] The arithmetic processing unit 10A performs a suck-back process, which allows for the rapid removal of SC1 from inside the nozzle 51A and supply pipe P11, thus shortening the waiting time for the arithmetic processing unit 10A in step S6. Furthermore, it more reliably prevents SC1 from falling onto the substrate W from the discharge port 511A.

[0122] Here, because the inner diameter of nozzle 51A is small and the pressure of SC1 inside nozzle 51A is high, it takes time for the suck-back mechanism SB12 to start sucking up the SC1 inside nozzle 51A. Therefore, even if the arithmetic processing unit 10A performs the suck-back process in step S6 without waiting for the first time, there is a possibility that SC1 will fall from the discharge port 511A onto the substrate W before the suck-back mechanism SB12 starts sucking up the SC1.

[0123] Furthermore, after the nozzle 51C stops discharging the rinse liquid in step S9, the calculation processing unit 10A may use the suck-back mechanism SB32 to suck up any remaining rinse liquid inside the nozzle 51C and the supply pipe P13.

[0124] (Modification 2) In steps S4 to S8, the arithmetic processing unit 10A may use nozzle 51D instead of processing liquid discharge nozzle 56. In other words, the explanation given for nozzles 51A and 51C in steps S4 to S8 may also apply to the two nozzles of nozzle 51D.

[0125] For example, in step S4, the arithmetic processing unit 10A may discharge the first processing liquid towards the peripheral edge Ws of the substrate W at the first discharge position P2 using the nozzle of the nozzle 51D. Alternatively, in step S8, the arithmetic processing unit 10A may discharge the second processing liquid towards the peripheral edge Ws of the substrate W at the second discharge position P3 using a nozzle other than the one used in step S4, from among the three nozzles of the nozzle 51D.

[0126] (Variation 3) In step S4, the arithmetic processing unit 10A may control the processing liquid supply unit 52 to supply DHF to the nozzle 51B. At this time, the arithmetic processing unit 10A uses the nozzle 51B to discharge DHF toward the peripheral Ws of the substrate W at the first discharge position P2. The nozzle 51B also discharges DHF toward the peripheral Ws of the substrate W at the first discharge position P2.

[0127] (Modification 4) Figure 9 is a schematic diagram showing the configuration and operation of the nozzle moving unit 54 in Modification 4 of the present disclosure. The substrate processing unit SP may further include an imaging unit 201 such as a camera. The imaging unit 201 is fixed to, for example, a head support member 547. The imaging unit 201 is imaging the area between the discharge port 511A and the substrate W.

[0128] In step S6, the arithmetic processing unit 10A may determine, based on the image captured by the imaging unit 201, whether the state in which SC1 does not fall from the discharge port 511A has continued for a second time. If the arithmetic processing unit 10A determines that the state in which SC1 does not fall from the discharge port 511A has continued for a second time, it proceeds to step S7. On the other hand, if it determines that the state in which SC1 does not fall from the discharge port 511A has not continued for a second time, it continues to determine whether the state in which SC1 does not fall from the discharge port 511A has continued for a second time.

[0129] Now, let's consider the case where, in step S6, the calculation processing unit 10A determines that the state in which SC1 does not fall from the discharge port 511A has continued for two hours, and proceeds to step S7. In this case, the calculation processing unit 10A stops the discharge of SC1 at the nozzle 51A and then waits for one hour at the first discharge position P2. In this case, the first hour is the time from when the calculation processing unit 10A issues a command to stop supplying SC1 until it determines that the state in which SC1 does not fall from the discharge port 511A has continued for two hours.

[0130] With the above configuration, it is possible to proceed to the process of moving the processing liquid discharge nozzle 56 after confirming that SC1 does not fall from the discharge port 511A. Therefore, it is possible to more reliably prevent the occurrence of processing marks by SC1 in the area on the substrate W where the rinsing liquid is discharged.

[0131] (Additional notes) This disclosure is not limited to the embodiments described above, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the various technical means disclosed in the embodiments are also included in the technical scope of this disclosure. [Explanation of Symbols]

[0132] 1. Processing Unit (Substrate Processing Equipment) 10 Control Unit (Control Section) 10A Arithmetic Processing Unit 51A, 51B, 51C Nozzles 56, 51D Processing liquid discharge nozzle 511A, 511B, 511C outlet CT center DS1, DS2, DS3 distance P2 1st discharge position P3 2nd discharge position SB12, SB22, SB32 Suck-back mechanism W board Ws Peripheral area

Claims

1. A substrate processing method that discharges a processing liquid toward the outer periphery of a rotating substrate, The processing liquid discharge nozzle, at the first discharge position, discharges the first processing liquid toward the outer periphery of the substrate. The processing liquid discharge nozzle stops discharging the first processing liquid at the first discharge position. After the processing liquid discharge nozzle stops discharging the first processing liquid, it waits at the first discharge position for a predetermined time. A substrate processing method comprising the process liquid discharge nozzle waiting for a predetermined time, and then discharging a second process liquid toward the outer periphery of the substrate from a second discharge position located closer to the center of the substrate than the first discharge position.

2. The processing liquid discharge nozzle comprises a first nozzle that discharges the first processing liquid from a first discharge port, and a second nozzle that discharges the second processing liquid from a second discharge port. The substrate processing method according to claim 1, wherein, when viewed from a vertical direction, the first distance between the first discharge port and the center of the substrate is the same as the second distance between the second discharge port and the center of the substrate.

3. The substrate processing method according to claim 1, wherein the predetermined time is longer than 0.5 seconds.

4. The substrate processing method according to claim 1, wherein the first processing solution is an etching solution for etching the substrate, and the second processing solution is a cleaning solution for cleaning the substrate.

5. The substrate processing method according to claim 1, wherein the processing liquid discharge nozzle is positioned above the substrate.

6. The substrate processing method according to claim 1, wherein after the processing liquid discharge nozzle stops discharging the first processing liquid, a suck-back process is performed to suck up the first processing liquid remaining inside the processing liquid discharge nozzle.

7. A processing liquid discharge nozzle that discharges processing liquid toward the outer periphery of a rotating substrate, The system comprises a control unit that controls the discharge of the processing liquid by the processing liquid discharge nozzle, The control unit, The processing liquid discharge nozzle discharges the first processing liquid toward the outer periphery of the substrate at the first discharge position. In the processing liquid discharge nozzle, the discharge of the first processing liquid is stopped at the first discharge position. After stopping the discharge of the first processing liquid at the processing liquid discharge nozzle, the nozzle waits at the first discharge position for a predetermined time. A substrate processing apparatus that, after waiting for the predetermined time, discharges a second processing liquid from the processing liquid discharge nozzle toward the outer periphery of the substrate at a second discharge position located closer to the center of the substrate than the first discharge position.

Images