Substrate processing apparatus and substrate processing method

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method that can clean the cup portion that collects processing liquid scattered from the substrate. [Solution] The processing unit (1) includes a rotating mechanism (2B) for rotating a substrate holder (2A), a processing mechanism (5) for discharging processing liquid from a discharge port toward the peripheral edge of the substrate (W), and a splash prevention mechanism (3) having a rotating cup portion (31) that surrounds the outer circumference of the rotating substrate (W) and collects processing liquid that splashes from the substrate (W) as the substrate holder (2A) rotates. The processing mechanism (5) has a cleaning nozzle (201) for cleaning the rotating cup portion (31).

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and method for processing a peripheral edge portion of a substrate with a processing liquid. Herein, substrates include semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for plasma displays, optical disc substrates, magnetic disc substrates, magneto-optical disc substrates, glass substrates for photomasks, substrates for solar cells, etc. (hereinafter simply referred to as "substrates"). Further, the processing includes etching processing. [Background Art]

[0002] There has been known a substrate processing apparatus that supplies a processing liquid to a peripheral edge portion of a substrate such as a semiconductor wafer while rotating the substrate to perform chemical processing, cleaning processing, or the like on the substrate. The substrate processing apparatus described in Patent Document 1 includes a scattering prevention mechanism having a cup portion that collects processing liquid scattered from the substrate while surrounding the periphery of the rotating substrate. [Prior Art Document] [Patent Document]

[0003] [Patent Document 1] Japanese Unexamined Patent Publication No. 2023-140682 [Summary of the Invention] [Problem to be Solved by the Invention]

[0004] In the substrate processing apparatus described in Patent Document 1, after performing chemical processing, cleaning processing, or the like on a substrate, it is required to clean the cup portion that collects the processing liquid scattered from the substrate. Therefore, an object of an aspect of the present disclosure is to provide a substrate processing apparatus and a substrate processing method capable of cleaning a cup portion that collects processing liquid scattered from a substrate. [Means for Solving the Problem]

[0005] To solve the above problems, a substrate processing apparatus according to one aspect of the present disclosure includes: a substrate holding part that is rotatable around a rotation axis extending vertically while holding a substrate; a rotation mechanism for rotating the substrate holding part; a processing mechanism having a processing liquid discharge nozzle that discharges processing liquid from a discharge port toward the peripheral edge of the substrate held by the substrate holding part; and a splash prevention mechanism having a cup part that surrounds the outer circumference of the rotating substrate and collects the processing liquid that splashes from the substrate as the substrate rotates, wherein the processing mechanism has a cleaning nozzle for cleaning the rotating cup part, and the discharge port of the cleaning nozzle is positioned radially outward from the substrate than the discharge port of the processing liquid discharge nozzle.

[0006] In a substrate processing apparatus according to one aspect of the present disclosure, the cleaning nozzle is provided downstream of the processing liquid discharge nozzle in the rotational direction of the cup portion, and when viewed from the vertical, it intersects with the radial direction of the cup portion and discharges the cleaning liquid in a direction toward the downstream side of the rotational direction.

[0007] In a substrate processing apparatus according to one aspect of the present disclosure, the processing liquid discharge nozzle is positioned above the substrate, and the discharge port of the cleaning nozzle may be positioned above the discharge port of the processing liquid discharge nozzle.

[0008] A substrate processing apparatus according to one aspect of the present disclosure further comprises a heating mechanism for heating the upper surface of the substrate, and the cleaning nozzle may discharge cleaning liquid downward from the discharge port of the cleaning nozzle.

[0009] In a substrate processing apparatus according to one aspect of the present disclosure, the processing solution may be an etching solution for etching the substrate.

[0010] A substrate processing apparatus according to one aspect of the present disclosure may further include a suck-back mechanism that sucks up the cleaning liquid remaining inside the cleaning nozzle after the cleaning nozzle has stopped discharging the cleaning liquid.

[0011] A substrate processing method according to one aspect of the present disclosure involves rotating a substrate holding portion that holds a substrate around a rotation axis extending in the vertical direction, discharging a processing liquid from the outlet of a processing liquid discharge nozzle toward the peripheral edge of the substrate held by the substrate holding portion, surrounding the outer circumference of the rotating substrate with a cup portion, collecting the processing liquid scattered from the substrate as the substrate rotates with the cup portion, cleaning the cup portion with a cleaning nozzle while rotating the cup portion, and positioning the outlet of the cleaning nozzle radially outward from the substrate than the outlet of the processing liquid discharge nozzle. [Effects of the Invention]

[0012] According to one aspect of this disclosure, a substrate processing apparatus and a substrate processing method can be provided that can clean a cup portion for collecting processing liquid scattered from the substrate. [Brief explanation of the drawing]

[0013] [Figure 1] This is a plan view showing a schematic configuration of a substrate processing system equipped with a processing unit according to the embodiment of this disclosure. [Figure 2] This figure shows the internal structure of the processing unit shown in Figure 1. [Figure 3] Figure 2 is a schematic plan view showing the configuration of the substrate processing unit included in the processing unit. [Figure 4] Figure 2 is a diagram illustrating the discharge port of the processing liquid discharge nozzle provided in the processing unit shown. [Figure 5] This figure shows the structure near the cleaning nozzle of the processing unit shown in Figure 2. [Figure 6] Figure 5 is a diagram illustrating the direction in which the cleaning nozzle discharges the cleaning solution. [Figure 7] Figure 3 schematically shows the configuration and operation of the nozzle moving section included in the substrate processing unit. [Figure 8] Figure 2 is a schematic diagram illustrating the configuration of the suck-back mechanism in the processing unit shown. [Figure 9]It is a flowchart showing beveling processing and cleaning processing executed by the processing unit shown in FIG. 2. [Figure 10] It is a diagram showing a structure near a cleaning nozzle provided in a processing unit according to Modification 1 of the present disclosure. DETAILED DESCRIPTION OF EMBODIMENTS

[0014] (Substrate Processing System) FIG. 1 is a plan view showing a schematic configuration of a substrate processing system 100 equipped with a processing unit 1 according to an embodiment of the present disclosure. This figure does not show the external appearance of the substrate processing system 100, but is a schematic diagram that clearly shows the internal structure of the substrate processing system 100 by omitting an outer wall panel and some other components. The following description is primarily directed to the substrate processing system 100, but also serves as a description of a substrate processing method that discharges a processing liquid toward a peripheral edge portion (outer peripheral portion) of a substrate W.

[0015] The substrate processing system 100 is, for example, a single-wafer type apparatus installed in a clean room that processes substrates W on which circuit patterns and the like have been formed one by one. Then, in the processing unit 1 provided in the substrate processing system 100, substrate processing using a processing liquid is performed.

[0016] In the present embodiment, both main surfaces of the substrate W are referred to as "surfaces". Further, on the substrate W, a surface facing downward is referred to as a "lower surface", and a surface facing upward is referred to as an "upper surface". In the following description, the processing unit 1 used for processing semiconductor wafers will be mainly taken as an example and described with reference to the drawings, but the present disclosure is also similarly applicable to processing other various types of substrates.

[0017] As shown in FIG. 1, the substrate processing system 100 has a substrate processing area 110 that performs processing on a substrate W. An indexer unit 120 is provided adjacent to this substrate processing area 110. The indexer unit 120 has a container holding portion 121 capable of holding a plurality of containers C for accommodating substrates W.

[0018] Further, the indexer unit 120 includes an indexer robot 122 for accessing a container C held by a container holding unit 121, taking out an unprocessed substrate W from the container C, and storing a processed substrate W into the container C. A plurality of substrates W are stored in each container C in a substantially horizontal posture.

[0019] The indexer robot 122 includes a base portion 122a fixed to an apparatus housing, an articulated arm 122b provided rotatably around a vertical axis with respect to the base portion 122a, and a hand 122c attached to a tip end of the articulated arm 122b. The hand 122c has a structure capable of placing and holding the substrate W on an upper surface thereof.

[0020] In the substrate processing area 110, a mounting table 112 is provided so as to be capable of mounting a substrate W from the indexer robot 122. In plan view, a substrate transfer robot 111 is disposed substantially at the center of the substrate processing area 110. Further, a plurality of processing units 1 are disposed so as to surround the substrate transfer robot 111.

[0021] Specifically, the plurality of processing units 1 are disposed facing a space where the substrate transfer robot 111 is disposed. The substrate transfer robot 111 randomly accesses the mounting table 112 with respect to these processing units 1, and transfers the substrate W to and from the mounting table 112. On the other hand, each processing unit 1 performs predetermined processing on the substrate W, and corresponds to the substrate processing apparatus of the present disclosure.

[0022] In the present embodiment, these processing units 1 have the same function. This enables parallel processing of a plurality of substrates W. Note that the mounting table 112 is not necessarily required if the substrate transfer robot 111 can directly receive the substrate W from the indexer robot 122.

[0023] (Inside the Processing Unit) Figure 2 shows the internal structure of the processing unit 1 shown in Figure 1. Figure 3 is a schematic plan view showing the configuration of the substrate processing unit SP included in the processing unit 1 shown in Figure 2. In Figure 2, the dimensions and number of each part may be exaggerated or simplified for ease of understanding.

[0024] As shown in Figures 2 and 3, the processing unit 1 has a structure in which a substrate processing unit SP is arranged in the internal space 12 within the chamber 11. The processing unit 1 comprises the substrate processing unit SP and a control unit 10. The processing unit 1 is a device that discharges processing liquid toward the peripheral Ws of a substrate W that rotates within the chamber 11.

[0025] Base support members 16, 16 are fixed to the upper surface of the bottom wall 11a of the chamber 11 by fasteners such as bolts, spaced apart from each other. A base member 17 is fixed to the upper ends of these base support members 16, 16 by fasteners such as bolts. The upper surface of this base member 17 is finished to allow for the installation of a substrate processing unit SP for performing substrate processing on a substrate W, and the substrate processing unit SP is installed on this upper surface. Each part constituting the substrate processing unit SP is electrically connected to a control unit 10 that controls the entire apparatus and operates in accordance with instructions from the control unit 10. The control unit 10 corresponds to the control unit of this disclosure.

[0026] In Figure 1, the processing unit 1 has a transport opening in the side wall facing the substrate transport robot 111, connecting the internal space 12 with the outside of the chamber 11. Therefore, the handle (not shown) of the substrate transport robot 111 can access the substrate processing unit SP through the transport opening. In other words, the transport opening allows for the loading and unloading of substrates W into and out of the internal space 12. A shutter 15 for opening and closing this transport opening is also attached to the side wall.

[0027] A shutter opening / closing mechanism (not shown) is connected to the shutter 15, which opens and closes the shutter 15 in response to an opening / closing command from the control unit 10. More specifically, in the processing unit 1, when an unprocessed substrate W is brought into the chamber 11, the shutter opening / closing mechanism opens the shutter 15, and the unprocessed substrate W is brought into the substrate processing unit SP by the handle of the substrate transport robot 111. In other words, the substrate W is placed on the spin chuck 21 of the substrate processing unit SP with its top surface facing upwards.

[0028] Then, after the substrate is loaded, the hand of the substrate transport robot 111 retracts from the chamber 11, and the shutter opening / closing mechanism closes the shutter 15. Then, within the processing space 12a of the chamber 11, the substrate processing unit SP performs beveling and cleaning on the peripheral Ws of the substrate W. After the beveling and cleaning are completed, the shutter opening / closing mechanism opens the shutter 15 again, and the hand of the substrate transport robot 111 removes the processed substrate W from the substrate processing unit SP.

[0029] (Circuit board processing) The substrate processing unit SP includes a holding and rotating mechanism 2, a scattering prevention mechanism 3, an upper surface protection heating mechanism 4, a processing mechanism 5, and an atmosphere separation mechanism 6. These mechanisms are mounted on a base member 17. The holding and rotating mechanism 2, the scattering prevention mechanism 3, the upper surface protection heating mechanism 4, the processing mechanism 5, and the atmosphere separation mechanism 6 are arranged in a predetermined relative position.

[0030] (Holding and rotating mechanism) The holding and rotating mechanism 2 includes a substrate holding section 2A that holds the substrate W in a substantially horizontal position with one main surface of the substrate W facing upward, and a rotating mechanism 2B that synchronously rotates the substrate holding section 2A holding the substrate W and a part of the anti-scattering mechanism 3. Therefore, when the rotating mechanism 2B is activated in response to a rotation command from the control unit 10, the substrate W and the rotating cup section 31 of the anti-scattering mechanism 3 are rotated around a rotation axis AX that extends parallel to the vertical direction.

[0031] The substrate holder 2A is provided so as to be rotatable around a rotation axis AX that extends vertically while holding the substrate W. The substrate holder 2A includes a spin chuck 21, which is a disc-shaped member smaller than the substrate W. The spin chuck 21 corresponds to an example of the holding table of this disclosure and is made of resin. The upper surface of the spin chuck 21 is substantially horizontal, and the spin chuck 21 is provided so that its central axis coincides with the rotation axis AX.

[0032] The spin chuck 21 is located inside the chamber 11 and supports the substrate W. A cylindrical rotating shaft portion 22 is connected to the lower surface of the spin chuck 21. The rotating shaft portion 22 extends vertically with its axis aligned with the rotation axis AX. A rotating mechanism 2B is also connected to the rotating shaft portion 22.

[0033] The rotating mechanism 2B includes a motor 23 and a power transmission unit 24. The motor 23 generates rotational driving force to rotate the substrate holding unit 2A and the rotating cup unit 31 of the anti-scattering mechanism 3. The power transmission unit 24 transmits the rotational driving force generated by the motor 23 to the rotating shaft unit 22.

[0034] A through-hole (not shown) is provided in the center of the spin chuck 21, and this through-hole communicates with the internal space of the rotating shaft portion 22. A pump 26 is connected to the internal space via piping 25, which has a valve (not shown) interposed therein. The pump 26 and the valve are electrically connected to the control unit 10 and operate in response to commands from the control unit 10. This allows negative pressure and positive pressure to be selectively applied to the spin chuck 21.

[0035] For example, when the substrate W is placed on the upper surface of the spin chuck 21 in a nearly horizontal position and the pump 26 applies negative pressure to the spin chuck 21, the spin chuck 21 will hold the substrate W by attraction from below. On the other hand, when the pump 26 applies positive pressure to the spin chuck 21, the substrate W becomes removable from the upper surface of the spin chuck 21. Also, when the pump 26 stops suction, the substrate W becomes able to move horizontally on the upper surface of the spin chuck 21.

[0036] A nitrogen gas supply unit 29 is connected to the spin chuck 21 via a pipe 28 located in the center of the rotating shaft portion 22. The nitrogen gas supply unit 29 supplies ambient temperature nitrogen gas, supplied from a utility in the factory where the substrate processing system 100 is installed, to the spin chuck 21 at a flow rate and timing corresponding to the gas supply command from the control unit 10. As a result, the nitrogen gas supply unit 29 circulates the nitrogen gas radially outward from the center on the underside of the substrate W. In this embodiment, nitrogen gas is used, but other inert gases may also be used.

[0037] The rotating mechanism 2B not only rotates the spin chuck 21 integrally with the substrate W, but also has a power transmission unit 27 to rotate the rotating cup portion 31 in synchronization with the rotation. The power transmission unit 27 has an annular member 27a made of a non-magnetic material or resin, a spin chuck-side magnet 27b built into the annular member 27a, and a cup-side magnet 27c built into the lower cup 32, which is a component of the rotating cup portion 31.

[0038] The annular member 27a is attached to the rotating shaft portion 22 and is rotatable together with the rotating shaft portion 22 around the rotating shaft AX. The lower cup 32 is positioned concentrically with the rotating shaft portion 22 and the annular member 27a, with the inner circumferential surface of the lower cup 32 separated from the outer circumferential surface of the annular member 27a by a predetermined distance.

[0039] An engagement pin and a connecting magnet (not shown) are provided on the upper outer edge of the lower cup 32, and these connect the upper cup 33 to the lower cup 32, and this connecting body functions as a rotating cup portion 31. The lower cup 32 is supported on the upper surface of the base member 17 by a bearing (not shown) so as to be rotatable around the rotation axis AX.

[0040] When the motor 23 rotates the annular member 27a together with the rotating shaft 22, the magnetic force between the spin chuck-side magnet 27b and the cup-side magnet 27c causes the lower cup 32 to rotate in the same direction as the annular member 27a while maintaining an air gap with the annular member 27a. As a result, the rotating cup portion 31 rotates around the rotation axis AX. In other words, the rotating cup portion 31 rotates in the same direction as the substrate W and in synchronization with it.

[0041] (Scatter prevention mechanism) The splash prevention mechanism 3 includes a rotating cup portion 31 that can rotate around the rotation axis AX while surrounding the outer circumference of the substrate W held by the spin chuck 21, and a fixed cup portion 34 that is fixedly provided so as to surround the rotating cup portion 31. The rotating cup portion 31 corresponds to an example of the cup portion of this disclosure and collects the processing liquid that splashes from the substrate W as the spin chuck 21 rotates while surrounding the outer circumference of the rotating substrate W.

[0042] The rotating cup section 31 is rotatable around the rotation axis AX by connecting the upper cup 33 to the lower cup 32. The droplets collected by the rotating cup section 31 are recovered along with the gaseous components and collected in the fixed cup section 34.

[0043] As shown in Figure 2, the upper cup 33 has a lower annular portion 330, an upper annular portion 333, and an inclined portion 332 connecting them. The outer diameter of the lower annular portion 330 is approximately the same as the outer diameter of the lower cup 32, and the lower annular portion 330 is located vertically above the peripheral edge of the lower cup 32. The inner circumferential surface of the upper annular portion 333 and the inner circumferential surface of the lower annular portion 330 are connected by the inclined portion 332 around the entire circumference of the upper cup 33.

[0044] Therefore, the inner circumferential surface of the inclined portion 332, that is, the surface surrounding the substrate W, is an inclined surface 332a. The inclined portion 332 surrounds the outer circumference of the rotating substrate W and is capable of collecting droplets scattered from the substrate W, and the space enclosed by the upper cup 33 and the lower cup 32 functions as a collection space.

[0045] The inclined portion 332 is inclined upward from the lower annular portion 330 toward the peripheral edge Ws of the substrate W. Therefore, droplets collected in the inclined portion 332 flow along the inclined surface 332a toward the lower end of the upper cup 33, i.e., the lower annular portion 330, and are discharged to the outside of the rotating cup portion 31 through the gap between the lower annular portion 330 and the lower cup 32.

[0046] The fixed cup portion 34 is provided so as to surround the rotating cup portion 31. The fixed cup portion 34 has a liquid receiving portion 341 and an exhaust portion 342 provided inside the liquid receiving portion 341. The liquid receiving portion 341 has a cup structure that opens from the outside to surround the gap between the upper cup 33 and the lower cup 32. In other words, the internal space of the liquid receiving portion 341 functions as an exhaust space. Therefore, the droplets collected by the rotating cup portion 31 are guided to the liquid receiving portion 341 along with the gaseous components. The droplets are then collected at the bottom of the liquid receiving portion 341 and discharged to the outside of the fixed cup portion 34.

[0047] Meanwhile, the gaseous components are collected in the exhaust section 342. This exhaust section 342 is separated from the liquid receiving section 341 via a partition wall 343. A gas guide section 344 is positioned above the partition wall 343. The gas guide section 344 extends approximately horizontally from directly above the partition wall 343, covering the partition wall 343 from above and forming a labyrinthine flow path for the gaseous components. Therefore, the gaseous components of the fluid flowing into the liquid receiving section 341 are collected in the exhaust section 342 via the above flow path. The gaseous components in the exhaust section 342 are then exhausted to the outside of the fixed cup section 34.

[0048] (Top protection heating mechanism) The top surface protection heating mechanism 4 comprises a disc portion 42, an internal heater 421, a heater drive unit 422, a support member 404, and a heating gas supply unit 47, and corresponds to an example of the heating mechanism of this disclosure. The disc portion 42 is positioned opposite the substrate W placed on the spin chuck 21. That is, the disc portion 42 is positioned above the upper surface of the substrate W held by the spin chuck 21 and is held in a horizontal position.

[0049] The disc portion 42 incorporates an internal heater 421 that is driven and controlled by a heater drive unit 422. The disc portion 42 has a diameter slightly shorter than that of the substrate W. The disc portion 42 is supported by a support member 404 such that its lower surface covers the upper surface area of ​​the substrate W, excluding the peripheral edge Ws, from above. The disc portion 42 heats the upper surface of the substrate W.

[0050] The lower end of the support member 404 is attached to the center of the disc portion 42. A cylindrical through hole (not shown) is formed so as to penetrate vertically through the support member 404 and the disc portion 42. A central nozzle 45 is inserted vertically through this through hole. This central nozzle 45 is connected to a heating gas supply unit 47 via a pipe 46.

[0051] The heating gas supply unit 47 heats ambient temperature nitrogen gas supplied from the factory where the substrate processing system 100 is installed using a heater 471, and supplies it to the substrate W at a flow rate and timing corresponding to the heating gas supply command from the control unit 10. A ribbon heater 48 is attached to a part of the piping 46. The ribbon heater 48 generates heat in response to the heating command from the control unit 10, heating the nitrogen gas flowing through the piping 46.

[0052] The heated nitrogen gas (hereinafter referred to as "heated gas") is then pumped towards the central nozzle 45 and discharged from the central nozzle 45. For example, when the heated gas is supplied with the disc portion 42 positioned in a processing position close to the substrate W held by the spin chuck 21, the heated gas flows from the center of the space between the upper surface of the substrate W and the disc portion 42 toward the periphery.

[0053] The upper end of the support member 404 is fixed to a beam member 49 that extends horizontally. This beam member 49 is connected to a lifting mechanism (not shown) attached to the upper surface of the base member 17, and is raised and lowered by the lifting mechanism in response to commands from the control unit 10. For example, in Figure 2, when the beam member 49 is positioned downward, the disc portion 42 connected to the beam member 49 via the support member 404 is positioned in the processing position.

[0054] On the other hand, when the lifting mechanism receives a lifting command from the control unit 10 and raises the beam member 49, the disc portion 42, beam member 49, and support member 404 rise together, and the upper cup 33 also rises in conjunction, separating from the lower cup 32. As a result, the space between the spin chuck 21 and the upper cup 33 and disc portion 42 widens, making it possible to load and unload the substrate W into and out of the spin chuck 21.

[0055] (Processing mechanism) As shown in the partially enlarged views of Figures 2 and 3, the processing mechanism 5 comprises a processing liquid discharge nozzle 51D, a nozzle moving unit 54, a nozzle head 56, a liquid supply unit 52, and a cleaning nozzle 201. The nozzle head 56 has processing liquid discharge nozzles 51A, 51B, 51C and a nozzle holder 53. The processing liquid discharge nozzles 51A to 51C are positioned above the substrate W, and the processing liquid discharge nozzle 51D is positioned below the substrate W.

[0056] The processing mechanism 5 may consist of only the nozzle moving part 54 and the nozzle head 56, or it may consist of only the processing liquid discharge nozzle 51D, among the processing liquid discharge nozzle 51D, nozzle moving part 54, and nozzle head 56.

[0057] The liquid supply unit 52 supplies processing liquid to the processing liquid discharge nozzles 51A to 51D and also supplies cleaning liquid to the cleaning nozzle 201. The processing liquid discharge nozzles 51A to 51D discharge the processing liquid toward the peripheral Ws of the substrate W held by the substrate holding unit 2A. The cleaning nozzle 201 cleans the rotating cup unit 31 by discharging cleaning liquid toward the rotating cup unit 31. In Figure 2, two liquid supply units 52 are shown, but they are identical.

[0058] In this embodiment, three processing liquid discharge nozzles 51A to 51C and a washing nozzle 201 are provided, and a liquid supply unit 52 is connected to them. The liquid supply unit 52 is configured to supply chemical solutions such as SC1 and DHF, as well as rinse solution, as processing liquids, and SC1, DHF, and rinse solution can be discharged independently from the three processing liquid discharge nozzles 51A, 51B, and 51C, respectively.

[0059] The chemicals SC1 and DHF are etching solutions for etching the substrate W, and the rinsing solution is a cleaning solution for cleaning the substrate W. The rinsing solution is pure water, such as deionized water (DIW). The rinsing solution may also be functional water, such as CO2 water. The cleaning solution discharged by the cleaning nozzle 201 may also be the aforementioned rinsing solution, such as pure water, such as deionized water.

[0060] (Discharge port of the processing liquid discharge nozzle) Figure 4 is a diagram illustrating the discharge ports of the processing liquid discharge nozzles 51A to 51C provided in the processing unit 1 shown in Figure 2. Figure 4 is also a view of the substrate W and the processing liquid discharge nozzles 51A to 51C from above. In Figure 4, components other than the substrate W and the processing liquid discharge nozzles 51A to 51C are omitted for ease of understanding.

[0061] A discharge port 511A for discharging the processing liquid is formed on the lower surface of the tip of the processing liquid discharge nozzle 51A. Similarly, a discharge port 511B for discharging the processing liquid is formed on the lower surface of the tip of the processing liquid discharge nozzle 51B, and a discharge port 511C for discharging the processing liquid is formed on the lower surface of the tip of the processing liquid discharge nozzle 51C.

[0062] Then, with the discharge port 511A facing the upper surface of the peripheral edge Ws on the substrate W, the lower part of the processing liquid discharge nozzle 51A is positioned in the notch 425 of the disc portion 42, as shown in the partially enlarged view of Figure 3. Similarly, with the discharge port 511B facing the upper surface of the peripheral edge Ws, the lower part of the processing liquid discharge nozzle 51B is positioned in the notch 425, and with the discharge port 511C facing the upper surface of the peripheral edge Ws, the lower part of the processing liquid discharge nozzle 51C is positioned in the notch 425.

[0063] The processing liquid discharge nozzle 51A discharges SC1 from the discharge port 511A, the processing liquid discharge nozzle 51B discharges DHF from the discharge port 511B, and the processing liquid discharge nozzle 51C discharges rinse liquid from the discharge port 511C.

[0064] As shown in the enlarged view of Figure 3, the upper parts of the processing liquid discharge nozzles 51A to 51C are fixed to the nozzle holder 53. This nozzle holder 53 is connected to the nozzle moving unit 54. The nozzle moving unit 54 is attached to a lifting mechanism, which moves the nozzle moving unit 54 in the vertical direction Z. The nozzle moving unit 54 moves the nozzle holder 53 in the radial direction D1 of the substrate W.

[0065] In this embodiment, as shown in Figure 2, a processing liquid discharge nozzle 51D and a nozzle support portion 57 are provided below the substrate W held by the spin chuck 21 in order to discharge the processing liquid toward the lower surface of the peripheral edge Ws of the substrate W. The nozzle support portion 57 has a thin-walled cylindrical portion 571 extending in the vertical direction and a flange portion 572 having an annular shape that is folded radially outward at the upper end of the cylindrical portion 571.

[0066] The cylindrical portion 571 has a shape that allows it to be freely inserted into the air gap formed between the annular member 27a and the lower cup 32. The nozzle support portion 57 is fixedly positioned such that the cylindrical portion 571 is freely inserted into the air gap and the flange portion 572 is positioned between the substrate W held by the spin chuck 21 and the lower cup 32.

[0067] Three processing liquid discharge nozzles 51D are attached to the upper peripheral edge of the flange portion 572. Each processing liquid discharge nozzle 51D has a discharge port (not shown) that opens toward the lower surface of the peripheral edge Ws of the substrate W, and is capable of discharging processing liquid supplied from the liquid supply unit 52 via the piping 58.

[0068] (Cleaning nozzle) Figure 5 shows the structure near the cleaning nozzle 201 of the processing unit 1 shown in Figure 2. Reference numeral 501 in Figure 5 indicates the position of the cleaning nozzle 201 when the processing liquid discharge nozzle 51C is discharging rinse liquid onto the substrate W. Reference numeral 502 in Figure 5 shows the cleaning nozzle 201 cleaning the upper cup 33. Reference numeral 503 in Figure 5 indicates the position of the cleaning nozzle 201 when the processing liquid discharge nozzles 51A to 51C are positioned at the home position, which is a position where they are retracted away from the end face of the substrate W.

[0069] As shown in the enlarged view of Figure 3 and reference numeral 501 in Figure 5, the cleaning nozzle 201 is fixed to the nozzle holder 53 by a fixing part 203. By fixing the cleaning nozzle 201 within the fixing part 203 and the through hole formed in the nozzle holder 53, the discharge port 202 formed at the tip of the cleaning nozzle 201 is exposed from below the nozzle holder 53. The cleaning nozzle 201 may be, for example, a spray nozzle that discharges cleaning liquid in a mist from a single discharge port 202, or a shower nozzle that discharges cleaning liquid from multiple discharge ports.

[0070] Both the processing liquid discharge nozzles 51A to 51C and the cleaning nozzle 201 are fixed to the nozzle holder 53. In other words, the processing liquid discharge nozzles 51A to 51C and the cleaning nozzle 201 are integrally provided. This allows the cleaning nozzle 201 to be placed in the same space as the processing liquid discharge nozzles 51A to 51C. Therefore, there is no need to secure a separate space for the cleaning nozzle 201 in addition to the space for the processing liquid discharge nozzles 51A to 51C. Consequently, the manufacturing cost of the processing unit 1 can be reduced.

[0071] The discharge port 202 of the cleaning nozzle 201 is positioned above the discharge ports of the processing liquid discharge nozzles 51A to 51C. Specifically, the discharge port 202 is positioned above the discharge ports 511A to 511C. Furthermore, when the substrate holding section 2A is holding the substrate W, the discharge port 202 is positioned above the substrate W. The cleaning nozzle 201 extends in a direction inclined from the vertical.

[0072] Furthermore, the cleaning nozzle 201 discharges the cleaning liquid downwards from the discharge port 202 of the cleaning nozzle 201. Here, since the processing liquid adheres to the rotating cup portion 31, the cleaning liquid that bounces off the rotating cup portion 31 is mixed with the processing liquid. If this cleaning liquid comes into contact with the disc portion 42, the cleaning liquid evaporates on the disc portion 42, leaving traces of the processing liquid (traces caused by the crystallization of the processing liquid) on the disc portion 42.

[0073] By having the cleaning nozzle 201 discharge the cleaning liquid downwards from the discharge port 202, the cleaning liquid discharged from the cleaning nozzle 201 can be made to bounce back from the rotating cup portion 31 downwards from the discharge port 202 of the cleaning nozzle 201. Therefore, the cleaning liquid can be prevented from coming into contact with the disc portion 42 on the upper side of the substrate W, and no traces of the processing liquid can be left on the disc portion 42. Consequently, particles can be prevented from being generated from traces of the processing liquid.

[0074] As shown by reference numeral 502 in Figure 5, the upper cup 33 has a vertical portion 331 formed between the inclined portion 332 and the upper annular portion 333. The vertical portion 331 is formed to extend along the vertical direction. The cleaning nozzle 201 discharges cleaning liquid from the discharge port 202 toward the inner vertical surface 331a of the vertical portion 331 of the upper cup 33 while the rotating cup portion 31 is rotating.

[0075] The cleaning liquid that hits the vertical surface 331a flows downward along the inclined surface 332a and is discharged into the liquid receiving section 341 through the gap between the lower cup 32 and the lower annular section 330. In this way, the cleaning nozzle 201 cleans the rotating cup section 31. This allows the rotating cup section 31, which collects the processing liquid scattered from the substrate W as the substrate holding section 2A rotates, to be cleaned. As a result, processing liquid particles are prevented from being generated from the rotating cup section 31, and the peripheral Ws of the substrate W can be properly processed.

[0076] Here, since the cleaning nozzle 201 discharges the cleaning liquid downwards from the discharge port 202, it is possible to prevent the cleaning liquid that hits the vertical surface 331a from flowing upward along the vertical surface 331a. Therefore, it is possible to prevent the cleaning liquid from splashing out from above the rotating cup portion 31 to the outside of the rotating cup portion 31.

[0077] Furthermore, since the discharge port 202 is positioned above the discharge ports 511A to 511C, the portion of the rotating cup 31 from which the cleaning nozzle 201 discharges the cleaning liquid can be made higher than the portion of the rotating cup 31 that is hit by the processing liquid splashed from the substrate W. Therefore, the processing liquid can be efficiently washed away from the rotating cup 31 by the cleaning liquid. As shown by reference numeral 503 in Figure 5, when the processing liquid discharge nozzles 51A to 51C are positioned in the home position, the discharge port 202 is positioned above the upper annular portion 333.

[0078] Figure 6 is a diagram illustrating the direction in which the cleaning nozzle 201 shown in Figure 5 discharges the cleaning liquid. Figure 6 is also a view of the processing liquid discharge nozzles 51A-51C, the rotating cup section 31, and the cleaning nozzle 201 from above. In Figure 6, for ease of understanding, components other than the processing liquid discharge nozzles 51A-51C, the rotating cup section 31, and the cleaning nozzle 201 are omitted.

[0079] As shown in Figure 6, the cleaning nozzle 201 is located downstream of the rotating cup section 31 in the rotational direction RD relative to the processing liquid discharge nozzles 51A to 51C. Furthermore, when viewed from the vertical, the cleaning nozzle 201 intersects the radial direction D2 of the rotating cup section 31 and discharges the cleaning liquid in a direction D3 toward the downstream side of the rotational direction RD.

[0080] The radial direction D2, when viewed from the vertical, is perpendicular to the tangent L1 of the circle formed by the portion surrounding the outer circumference of the substrate W in the rotating cup portion 31. For example, when viewed from the vertical, the radial direction D2 is perpendicular to the tangent L1 of the circle formed by the vertical plane 331a. The radial direction D2 is the same direction as the radial direction D1 of the substrate W.

[0081] By discharging cleaning fluid in direction D3 from the cleaning nozzle 201, the cleaning fluid discharged from the cleaning nozzle 201 can be made to bounce back from the rotating cup section 31 toward the downstream side in the rotation direction RD of the rotating cup section 31. As a result, the cleaning fluid bounced back from the rotating cup section 31 can be prevented from adhering to the processing fluid discharge nozzles 51A to 51C, and when the processing fluid discharge nozzles 51A to 51C discharge the processing fluid, the cleaning fluid can be prevented from adhering to the substrate W.

[0082] (Movement of the processing liquid discharge nozzle) Figure 7 is a schematic diagram showing the configuration and operation of the nozzle moving unit 54 provided in the substrate processing unit SP shown in Figure 3. As shown in Figure 7, the nozzle moving unit 54 is equipped with a linear actuator 542. The linear actuator 542 has a nozzle drive motor 543 and a motion conversion mechanism 545. The motion conversion mechanism 545 converts the rotational motion of a rotating body such as a ball screw connected to the rotation shaft of the nozzle drive motor 543 into linear motion, causing the slider 544 to reciprocate in the radial direction D1 of the substrate W.

[0083] A head support member 547 is connected to the slider 544 via a connecting member 546. The head support member 547 has a rod shape extending in the radial direction D1. A nozzle head 56 is attached to the end of the head support member 547 opposite to the side of the connecting member 546.

[0084] When the nozzle drive motor 543 rotates in response to a processing liquid supply command from the control unit 10, the slider 544, head support member 547, nozzle head 56, and cleaning nozzle 201 move integrally in the radial direction D1. As a result, the processing liquid discharge nozzles 51A to 51C of the nozzle head 56 and the cleaning nozzle 201 are positioned in the radial direction D1.

[0085] In this manner, the nozzle moving unit 54 moves the three processing liquid discharge nozzles 51A to 51C and the cleaning nozzle 201 together in the radial direction D1. As a result, beveling and cleaning processes are performed while the processing liquid discharge nozzles 51A to 51C and the cleaning nozzle 201 move back and forth. Furthermore, the mechanism for moving the processing liquid discharge nozzles 51A to 51C and the cleaning nozzle 201 in the nozzle moving unit 54 can be simplified.

[0086] On the other hand, when no processing liquid supply command is given for any of the three types of processing liquids, the nozzle head 56 is retracted to a sufficient distance from the end face of the substrate W. Specifically, the discharge port 511A of the processing liquid discharge nozzle 51A is positioned at a preset home position. Discharge ports 511B and 511C are also positioned at their home positions.

[0087] At this time, the spring member 548 provided on the motion conversion mechanism 545 is compressed by the slider 544, applying a biasing force to the slider 544 in the direction of the substrate W in the radial direction D1. When a processing liquid supply command is given, the processing liquid discharge nozzles 51A to 51C and the cleaning nozzle 201 move together from the home position in the direction of the substrate W in the radial direction D1.

[0088] Then, the processing liquid discharge nozzles 51A to 51C move to the discharge position and discharge the processing liquid toward the peripheral Ws of the substrate W. Once the forward movement of the nozzle head 56 is complete, the return movement is performed. That is, the nozzle head 56 moves along the reverse path of the forward movement. Then, the cleaning nozzle 201 moves to the position shown by reference numeral 502 in Figure 5 and discharges the cleaning liquid toward the upper cup 33. After the cleaning nozzle 201 has finished discharging the cleaning liquid, the nozzle head 56 moves from the position shown by reference numeral 502 in Figure 5 to the home position.

[0089] Furthermore, as shown in Figure 7, the discharge port 202 of the cleaning nozzle 201 is located radially D1 outward from the substrate W than the discharge port 511A of the processing liquid discharge nozzle 51A. Similarly, the discharge port 202 is located radially D1 outward from the substrate W than the discharge port 511B of the processing liquid discharge nozzle 51B, and the discharge port 202 is located radially D1 outward from the substrate W than the discharge port 511C of the processing liquid discharge nozzle 51C.

[0090] By positioning the discharge port 202 of the cleaning nozzle 201 radially D1 outward from the discharge ports 511A to 511C, the cleaning liquid that bounces off the rotating cup portion 31 is less likely to adhere to the processing liquid discharge nozzles 51A to 51C.

[0091] (Suck-back mechanism) Figure 8 is a schematic diagram illustrating the configuration of the suck-back mechanisms SB12, SB22, SB32, and SB42 provided in the processing unit 1 shown in Figure 2. The substrate processing unit SP may further include suck-back mechanisms SB12 to SB42. The suck-back mechanisms SB12 to SB42 may be, for example, diaphragm type.

[0092] In this case, the suck-back valves (not shown) included in the suck-back mechanisms SB12 to SB42 have diaphragms that change the volume of the liquid flow path by deforming. When the volume of the flow path increases, the pressure in the flow path decreases instantaneously, and a suction force acts on the liquid remaining near the discharge ports 511A to 511C and 202. Note that the suck-back mechanisms SB12 to SB42 may also be siphon-type mechanisms that perform suck-back using the principle of siphon.

[0093] The suck-back mechanism SB12 sucks back (retracts) the tip surface of SC1 from the discharge port 511A of the processing liquid discharge nozzle 51A after the discharge of SC1 from the processing liquid discharge nozzle 51A has stopped. This will be explained in detail below. The suction pipe SB11 connects the supply pipe P11 for supplying SC1 to the processing liquid discharge nozzle 51A and the suck-back mechanism SB12.

[0094] A portion of the suction piping SB11 is located inside the chamber 11. The suck-back mechanism SB12 is located outside the chamber 11. One end of the suction piping SB11 is connected to the supply piping P11 between the processing liquid discharge nozzle 51A and the liquid supply unit 52. The supply piping P11 is equipped with a supply control valve V1, which controls the start and stop of the supply of SC1 via the supply piping P11. After the supply of SC1 is stopped by the closing of the supply control valve V1, the suck-back mechanism SB12 sucks up any SC1 remaining inside the processing liquid discharge nozzle 51A and the supply piping P11.

[0095] The suck-back mechanism SB22, like the suck-back mechanism SB12, sucks back the tip of the DHF from the discharge port 511B of the processing liquid discharge nozzle 51B after the discharge of DHF from the processing liquid discharge nozzle 51B has stopped. The suction pipe SB21 connects the supply pipe P12 for supplying DHF to the processing liquid discharge nozzle 51B and the suck-back mechanism SB22. The supply pipe P12 is equipped with a supply control valve V2, which controls the start and stop of the supply of DHF via the supply pipe P12.

[0096] The suck-back mechanism SB32, like the suck-back mechanism SB12, sucks back the leading edge of the rinse liquid from the discharge port 511C of the processing liquid discharge nozzle 51C after the discharge of the rinse liquid from the processing liquid discharge nozzle 51C has stopped. The suction pipe SB31 connects the supply pipe P13 for supplying rinse liquid to the processing liquid discharge nozzle 51C and the suck-back mechanism SB32. The supply pipe P13 is equipped with a supply control valve V3, which controls the start and stop of the supply of rinse liquid via the supply pipe P13.

[0097] The suck-back mechanism SB42 sucks back the leading edge of the cleaning fluid from the discharge port 202 of the cleaning nozzle 201 after the discharge of the cleaning fluid from the cleaning nozzle 201 has stopped. This will be explained in detail below. The suction pipe SB41 connects the supply pipe P14 for supplying cleaning fluid to the cleaning nozzle 201 and the suck-back mechanism SB42.

[0098] A portion of the suction piping SB41 is located inside the chamber 11. The suck-back mechanism SB42 is located outside the chamber 11. One end of the suction piping SB41 is connected to the supply piping P14 between the cleaning nozzle 201 and the liquid supply unit 52. The supply piping P14 is equipped with a supply control valve V4, which controls the start and stop of the supply of cleaning fluid through the supply piping P14. The supply control valves V1 to V4 are included in the liquid supply unit 52.

[0099] The suck-back mechanism SB42 sucks up any remaining cleaning fluid inside the cleaning nozzle 201 and the supply piping P14 after the supply control valve V4 closes, which stops the cleaning nozzle 201 from discharging the cleaning fluid. This prevents cleaning fluid from being discharged from the cleaning nozzle 201 when the processing fluid discharge nozzles 51A to 51C discharge the processing fluid onto the next substrate W after the cleaning nozzle 201 has cleaned the rotating cup section 31. Therefore, cleaning fluid can be prevented from adhering to the substrate W.

[0100] (Atmosphere separation mechanism) As shown in Figure 2, the atmosphere separation mechanism 6 separates the internal space 12 within the chamber 11 into a processing space 12a where beveling and cleaning processes on the substrate W can be performed, and an outer space 12b of the processing space 12a. The atmosphere separation mechanism 6 is positioned to completely surround the spin chuck 21, the substrate W held by the spin chuck 21, the rotating cup portion 31, and the upper surface protection heating mechanism 4 from above. The atmosphere separation mechanism 6 has a lower sealing cup member 61 and an upper sealing cup member 62. The lower sealing cup member 61 is provided so as to be movable in the vertical direction.

[0101] As the lower sealing cup member 61 descends and is positioned at its lower limit, the upper sealing cup member 62, the lower sealing cup member 61, and the fixed cup portion 34 are connected in the vertical direction. Thus, the upper sealing cup member 62, the lower sealing cup member 61, and the fixed cup portion 34 form a processing space 12a.

[0102] Furthermore, as the lower sealing cup member 61 rises and moves to the retracted position, the upper cup 33 also rises together with it by engaging with the lower sealing cup member 61. This causes the upper cup 33 and the upper surface protection heating mechanism 4 to move upward away from the spin chuck 21. The movement of the lower sealing cup member 61 to the retracted position creates a transport space for the hand of the substrate transport robot 111 to access the spin chuck 21.

[0103] (Control unit) The control unit 10 includes an arithmetic processing unit 10A, a storage unit 10B, a reading unit 10C, a drive control unit 10D, and a communication unit 10E. The storage unit 10B is composed of a hard disk drive or the like and stores a program for the processing unit 1 to perform beveling and cleaning processes.

[0104] The program is stored, for example, on a computer-readable recording medium RM (e.g., optical disk, magnetic disk, magneto-optical disk, etc.), read from the recording medium RM by the reading unit 10C, and stored in the storage unit 10B. Furthermore, the provision of the program is not limited to the recording medium RM; for example, the program may be provided via a telecommunications line. The drive control unit 10D controls each drive unit of the processing unit 1. The communication unit 10E is for the arithmetic processing unit 10A to communicate with the substrate transport robot 111.

[0105] The arithmetic processing unit 10A is composed of a computer having a CPU (Central Processing Unit), RAM (Random Access Memory), etc. The arithmetic processing unit 10A controls each part of the processing unit 1 as follows, according to the program stored in the memory unit 10B, and performs beveling and cleaning processes. The beveling and cleaning processes by the processing unit 1 will be described below with reference to Figure 9.

[0106] (Beveling and cleaning processes) Figure 9 is a flowchart showing the beveling and cleaning processes performed by the processing unit 1 shown in Figure 2. First, the arithmetic processing unit 10A loads the substrate W (S1). Specifically, the arithmetic processing unit 10A requests the substrate transport robot 111 to load the substrate W via the communication unit 10E and waits until the unprocessed substrate W is brought into the processing unit 1 and placed on the upper surface of the spin chuck 21. Then, the substrate W is placed on the spin chuck 21. At this point, the pump 26 is stopped, and the substrate W is able to move horizontally on the upper surface of the spin chuck 21.

[0107] When the substrate W is placed on the upper surface of the spin chuck 21, the substrate transport robot 111 retracts from the processing unit 1. Subsequently, the arithmetic processing unit 10A uses the centering mechanism (not shown) provided by the substrate processing unit SP to center the substrate W. This eliminates the eccentricity of the substrate W relative to the spin chuck 21, so that the center of the substrate W coincides with the center of the spin chuck 21. After centering the substrate W, the arithmetic processing unit 10A operates the pump 26 to apply negative pressure to the spin chuck 21. As a result, the spin chuck 21 attracts and holds the substrate W from below.

[0108] Next, the calculation processing unit 10A prepares for the discharge of the processing liquid (S2). Specifically, the calculation processing unit 10A gives a downward command to the lifting mechanism (not shown). In response, the lifting mechanism lowers the lower sealing cup member 61, nozzle head 56, beam member 49, and upper surface protection heating mechanism 4 together. During this downward movement, the upper cup 33 is connected to the lower cup 32. This forms the rotating cup section 31.

[0109] In this state, the lower surface of the disc portion 42 covers the upper surface area of ​​the substrate W, excluding the peripheral edge Ws, from above. In addition, the processing liquid discharge nozzles 51A to 51C are positioned within the notch 425 of the disc portion 42 with their discharge ports facing the upper surface of the peripheral edge Ws on the substrate W.

[0110] After the processing liquid discharge nozzles 51A to 51C are positioned, the calculation processing unit 10A issues a rotation command to the motor 23, initiating the rotation of the spin chuck 21 and the rotating cup section 31 that hold the substrate W. In other words, the calculation processing unit 10A uses the rotation mechanism 2B to rotate the substrate holding section 2A that holds the substrate W around a rotation axis AX that extends vertically. The rotation speed of the substrate W and the rotating cup section 31 is set to, for example, 1800 revolutions per minute.

[0111] Next, the arithmetic processing unit 10A preheats the substrate W (S3). Specifically, the arithmetic processing unit 10A controls the heater drive unit 422 to raise the internal heater 421 to the desired temperature. The arithmetic processing unit 10A also issues a heating gas supply command to the heating gas supply unit 47. As a result, nitrogen gas heated by the heater 471, i.e., the heating gas, is pumped from the heating gas supply unit 47 towards the substrate W. This heating gas is heated by the ribbon heater 48 as it passes through the piping 46.

[0112] As a result, the heating gas is supplied to the top surface protection heating mechanism 4 while preventing a temperature drop during gas supply via the piping 46. In the top surface protection heating mechanism 4, the heating gas is heated by the internal heater 421. The heated gas is then discharged towards the space sandwiched between the substrate W and the disc portion 42 near the peripheral edge Ws of the substrate W. Therefore, the upper surface of the peripheral edge Ws of the substrate W is heated intensively.

[0113] Furthermore, the peripheral Ws of the substrate W are also heated by the internal heater 421. As a result, the temperature of the peripheral Ws of the substrate W rises over time, reaching a temperature suitable for beveling, for example, 90°C. In addition, the temperature of areas other than the peripheral Ws also rises to approximately the same temperature due to the heat from the internal heater 421. In other words, in this embodiment, the in-plane temperature of the upper surface of the substrate W is approximately uniform.

[0114] The arithmetic processing unit 10A heats the substrate W with the internal heater 421, and then processes the peripheral Ws of the substrate W with the processing liquid (S4). Specifically, the arithmetic processing unit 10A moves the processing liquid discharge nozzles 51A to 51C to a position where the discharge ports 511A to 511C are located above the peripheral Ws of the substrate W, i.e., the discharge position. The arithmetic processing unit 10A also moves the processing liquid discharge nozzle 51D to a position where the discharge port of the processing liquid discharge nozzle 51D is located below the peripheral Ws of the substrate W.

[0115] The processing unit 10A then controls the liquid supply unit 52 to supply processing liquid to the processing liquid discharge nozzles 51A to 51D. In other words, the liquid flow of the processing liquid is discharged from the processing liquid discharge nozzles 51A to 51C so as to hit the upper surface of the peripheral edge Ws of the substrate W, and the liquid flow of the processing liquid is discharged from the processing liquid discharge nozzle 51D so as to hit the lower surface of the peripheral edge Ws of the substrate W. This performs beveling on the peripheral edge Ws of the substrate W.

[0116] At this time, the arithmetic processing unit 10A discharges SC1 from the discharge port 511A of the processing liquid discharge nozzle 51A toward the peripheral edge Ws of the substrate W held by the substrate holding unit 2A. The arithmetic processing unit 10A also discharges DHF from the discharge port 511B of the processing liquid discharge nozzle 51B toward the peripheral edge Ws of the substrate W. Furthermore, the arithmetic processing unit 10A discharges rinsing liquid from the discharge port 511C of the processing liquid discharge nozzle 51C toward the peripheral edge Ws of the substrate W.

[0117] The arithmetic processing unit 10A may, instead of discharging the processing liquid to the lower surface of the peripheral Ws, discharge the processing liquid to the upper surface of the peripheral Ws using the processing liquid discharge nozzles 51A to 51C. Alternatively, the arithmetic processing unit 10A may, instead of discharging the processing liquid to the upper surface of the peripheral Ws, discharge the processing liquid to the lower surface of the peripheral Ws using the processing liquid discharge nozzle 51D. In step S4, by surrounding the outer circumference of the rotating substrate W with the rotating cup portion 31, the processing liquid scattered from the substrate W as the substrate holding portion 2A rotates is collected by the rotating cup portion 31.

[0118] Then, when the arithmetic processing unit 10A detects the elapsed processing time required for the beveling of the substrate W, it terminates the surface treatment of the substrate W (S5). Specifically, the arithmetic processing unit 10A issues a supply stop command to the liquid supply unit 52 and stops the discharge of the processing liquid.

[0119] Subsequently, the arithmetic processing unit 10A issues a command to stop supplying the heating gas to the heating gas supply unit 47, stopping the supply of heating gas from the heating gas supply unit 47 to the substrate W. The arithmetic processing unit 10A also issues a command to stop rotation to the motor 23, stopping the rotation of the spin chuck 21 and the rotating cup unit 31. Furthermore, the arithmetic processing unit 10A controls the heater drive unit 422 to stop the internal heater 421.

[0120] Next, the arithmetic processing unit 10A observes the peripheral Ws of the substrate W to inspect the result of the beveling process (S6). Specifically, the arithmetic processing unit 10A positions the upper cup 33 in a retracted position, similar to when the substrate W is loaded, to form a transport space. Then, the arithmetic processing unit 10A controls the observation head drive unit (not shown) to bring the observation head (not shown) closer to the substrate W.

[0121] The processing unit 10A illuminates the peripheral Ws of the substrate W via the observation head by turning on the light source unit (not shown). The imaging unit (not shown) receives the reflected light reflected from the peripheral Ws and adjacent areas and images the peripheral Ws and adjacent areas. In other words, while the substrate W is rotating around the rotation axis AX, the imaging unit acquires a peripheral image of the peripheral Ws along the rotation direction of the substrate W from multiple images of the peripheral Ws acquired by the imaging unit.

[0122] Then, the arithmetic processing unit 10A controls the observation head drive unit to retract the observation head from the substrate W. In parallel with this, the arithmetic processing unit 10A checks whether the beveling process has been performed well, based on the captured peripheral Ws and adjacent region images, i.e., the peripheral image. In this embodiment, as an example of this check, the processing width processed by the processing liquid from the edge face of the substrate W toward the center of the substrate W is checked from the peripheral image.

[0123] After inspection, the processing unit 10A sends an unloading request for the substrate W to the substrate transport robot 111 via the communication unit 10E, and the processed substrate W is discharged from the processing unit 1 (S7).

[0124] After the processed substrate W is discharged from the processing unit 1, the arithmetic processing unit 10A performs a cleaning process in which it cleans the rotating cup section 31 with the cleaning nozzle 201 while rotating the rotating cup section 31 (S8). Specifically, the arithmetic processing unit 10A gives a rotation command to the motor 23 and starts the rotation of the spin chuck 21 and the rotating cup section 31.

[0125] Then, while the rotating cup section 31 is rotating, the arithmetic processing unit 10A issues a command to the liquid supply unit 52 to start supplying cleaning fluid, and opens the supply control valve V4 to supply cleaning fluid to the cleaning nozzle 201. In other words, the liquid flow of cleaning fluid is discharged from the cleaning nozzle 201 so as to hit the vertical surface 331a of the rotating cup section 31. This performs the cleaning process on the rotating cup section 31.

[0126] These steps are repeated. Furthermore, the process in step S8 is not limited to immediately after the substrate W is unloaded from the processing unit 1, but may also be automatically executed at any time as maintenance, even when the substrate W is not being held in the substrate holding unit 2A.

[0127] (Variation 1) Figure 10 shows the structure near the cleaning nozzle 201A of the processing unit according to Modification 1 of the present disclosure. As shown in Figure 10, the cleaning nozzle 201A differs from the cleaning nozzle 201 in that it extends vertically and the discharge port 202A is formed on the side surface of the cleaning nozzle 201A.

[0128] The cleaning nozzle 201A discharges cleaning fluid from the outlet 202A toward the inner vertical surface 331a of the vertical portion 331 of the upper cup 33. The outlet 202A is formed in the portion of the cleaning nozzle 201A that faces the vertical surface 331a.

[0129] (Modification 2) While the substrate holder 2A is holding the substrate W, the discharge port 202 of the cleaning nozzle 201 may be positioned below the substrate W. In this case, the cleaning nozzle 201 discharges the cleaning liquid upwards from the discharge port 202.

[0130] Here, as shown by reference numeral 502 in Figure 5, the inclined portion 332 of the upper cup 33 is inclined to widen radially outward from the substrate W as it extends downward. Therefore, by having the cleaning nozzle 201 discharge the cleaning liquid upward from the discharge port 202, the cleaning liquid can be applied to a wide area of ​​the inclined surface 332a of the inclined portion 332, and the rotating cup portion 31 can be cleaned efficiently.

[0131] (Variation 3) In the above embodiment, the rotating cup section 31 has a divided structure in which the upper cup 33 and the lower cup 32, which are separable from each other, are connected to each other during processing, thereby integrating the upper cup 33 and the lower cup 32. However, this disclosure is not limited to this, and also applies to processing units that collect droplets using a rotating cup section in which the upper cup and the lower cup are pre-integrated.

[0132] Furthermore, in the above embodiment, the upper cup 33 of the rotating cup portion 31 has a vertical portion 331. However, this disclosure is not limited thereto and also applies to cases where the upper cup 33 does not have a vertical portion 331, but rather the inclined portion 332 and the upper annular portion 333 are directly connected. In this case, the cleaning nozzle 201 discharges the cleaning liquid toward the inclined surface 332a.

[0133] (Additional notes) This disclosure is not limited to the embodiments described above, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the various technical means disclosed in the embodiments are also included in the technical scope of this disclosure. [Explanation of symbols]

[0134] 1. Processing unit 2. Holding and rotating mechanism 2A Board holder 2B Rotation mechanism 3 Shatter prevention mechanism 4 Top protection heating mechanism (heating mechanism) 5 Processing mechanism 31 Rotating cup section 51A~51C Processing liquid discharge nozzles; 201, 201A Cleaning nozzles 202, 202A Discharge port of the cleaning nozzle 511A~511C Discharge port of the processing liquid discharge nozzle AX Rotation axis D2 Radial direction D3: Direction toward the downstream side of the rotation direction RD: Direction of rotation SB42 Suck-back mechanism W circuit board Ws Peripheral area

Claims

1. A substrate holder is provided that is rotatable around a rotation axis extending vertically while holding the substrate, A rotating mechanism for rotating the substrate holding portion, A processing mechanism having a processing liquid discharge nozzle that discharges processing liquid from a discharge port toward the peripheral edge of the substrate held by the substrate holding part, The device includes a splash prevention mechanism having a cup portion that surrounds the outer circumference of the rotating substrate and collects the processing liquid that splashes from the substrate as the substrate holder rotates, The processing mechanism has a cleaning nozzle for cleaning the rotating cup portion, A substrate processing apparatus wherein the discharge port of the cleaning nozzle is located radially outward from the substrate than the discharge port of the processing liquid discharge nozzle.

2. The aforementioned cleaning nozzle is It is provided on the downstream side in the rotational direction of the cup portion relative to the processing liquid discharge nozzle, The substrate processing apparatus according to claim 1, wherein, when viewed from a vertical direction, the cleaning liquid is discharged in a direction that intersects with the radial direction of the cup portion and is toward the downstream side of the rotational direction.

3. The processing liquid discharge nozzle is positioned above the substrate, The substrate processing apparatus according to claim 1, wherein the discharge port of the cleaning nozzle is positioned above the discharge port of the processing liquid discharge nozzle.

4. The substrate further comprises a heating mechanism for heating the upper surface of the substrate, The substrate processing apparatus according to claim 3, wherein the cleaning nozzle discharges cleaning liquid downward from the discharge port of the cleaning nozzle.

5. The substrate processing apparatus according to claim 1, wherein the processing solution is an etching solution for etching the substrate.

6. The substrate processing apparatus according to claim 1, further comprising a suck-back mechanism for sucking up the cleaning liquid remaining inside the cleaning nozzle after the cleaning nozzle has stopped discharging the cleaning liquid.

7. The substrate holder, which holds the substrate, is rotated around a rotation axis that extends vertically. The processing liquid is discharged from the discharge port of the processing liquid discharge nozzle toward the peripheral edge of the substrate held in the substrate holding part. By surrounding the outer circumference of the rotating substrate with the cup portion, the processing liquid that is scattered from the substrate as the substrate holder rotates is collected by the cup portion. While rotating the cup portion, the cup portion is cleaned with a cleaning nozzle. A substrate processing method wherein the discharge port of the cleaning nozzle is positioned radially outward from the substrate than the discharge port of the processing liquid discharge nozzle.

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