Substrate processing method and substrate processing apparatus

Abstract

The present invention provides a substrate processing method and a substrate processing apparatus that can suppress deviations in processing width and improve processing quality even when processing the peripheral edges of the substrate while heating. [Solution] The substrate processing method specifies the heating temperature and processing width of the processing space, and injects a processing material from a predetermined injection position corresponding to the processing width toward the peripheral edge of a rotating substrate (W) in the heated processing space. The processing space is heated to the specified heating temperature to warp the substrate (W), and the processing material is injected toward the peripheral edge of the warped substrate from an injection position corresponding to the specified processing width to measure the actual processing width. The amount of adjustment from the injection position corresponding to the specified processing width is set according to the amount of deviation between the actual processing width and the specified processing width.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method and apparatus that process a peripheral portion of a substrate with a processing liquid or the like. Here, the substrate includes semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for plasma displays, optical disc substrates, magnetic disc substrates, magneto-optical disc substrates, glass substrates for photomasks, substrates for solar cells, etc. (hereinafter simply referred to as "substrates"). The processing also includes etching processing.

Background Art

[0002] As substrate processing apparatuses that rotate a substrate such as a semiconductor wafer, supply a processing liquid to the peripheral portion of the substrate, and perform chemical processing, cleaning processing, etc., for example, the apparatuses described in Patent Document 1 and Patent Document 2 are known. When removing a thin film at the peripheral portion of a substrate in the above-described substrate processing apparatus, it is required to accurately remove the thin film of a specified dimension.

Prior Art Literature

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problem to be Solved by the Invention

[0004] By the way, in such a substrate processing apparatus, for purposes such as increasing the processing speed, the peripheral portion of the substrate is sometimes processed while heating using a heater. Here, the temperature setting of the heater is not unique, and varies depending on factors such as the type of thin film to be processed. Therefore, the temperature of the processing space in the substrate processing apparatus changes between room temperature and a high temperature of approximately 200°C.

[0005] However, the inventors of this case have found that when processing the peripheral edges of a substrate while heating it with a heater, there is a discrepancy between the stated processing width and the actual processing width, which can lead to a decrease in processing quality.

[0006] Therefore, one aspect of this disclosure aims to provide a substrate processing method and a substrate processing apparatus that can suppress deviations in processing width and improve processing quality even when processing the peripheral edge of the substrate while heating. [Means for solving the problem]

[0007] To solve the above problems, a substrate processing method according to one aspect of the present disclosure is a substrate processing method in which a heating temperature and processing width of a processing space are specified, and a processing material is injected from a predetermined injection position corresponding to the specified processing width toward the peripheral edge of a substrate rotating in the processing space heated to the specified heating temperature, (1) The processing space is heated to the specified heating temperature to cause the substrate to bend, (2) The processing material is injected from the predetermined injection position corresponding to the specified processing width toward the peripheral edge of the warped substrate, (3) Measure the actual processing width that is injected and processed from the predetermined injection position corresponding to the specified processing width. (4) The amount of adjustment from the predetermined injection position corresponding to the specified processing width is set according to the amount of deviation between the measured actual processing width and the specified processing width.

[0008] A substrate processing method according to one aspect of this disclosure may be configured to automatically perform the processes described in (1) to (4) above each time the specified heating temperature is changed.

[0009] A substrate processing method according to one aspect of the present disclosure may be configured such that the adjustment amount set in (4) above is stored in a storage unit in association with the corresponding heating temperature and the corresponding processing width, and when the specified heating temperature is changed, if the adjustment amount associated with the changed heating temperature is stored in the storage unit, the processes from (1) to (4) above are not performed, and the adjustment amount is obtained from the storage unit.

[0010] In one aspect of the present disclosure, the substrate processing method may also involve a processing liquid as the processing material.

[0011] To solve the above problems, a substrate processing apparatus according to one aspect of the present disclosure is a substrate processing apparatus that specifies a heating temperature and processing width of a processing space, and injects a processing material from a predetermined injection position corresponding to the specified processing width toward the peripheral edge of a substrate rotating in the processing space heated to the specified heating temperature, comprising: a holding table for holding the substrate; an injection mechanism for injecting the processing material; a heater for heating the processing space; a control unit; and a memory for storing at least information indicating the control operation of the control unit, wherein the control unit cooperates with the memory to heat the processing space to the specified heating temperature to warp the substrate, inject the processing material from the predetermined injection position corresponding to the specified processing width toward the peripheral edge of the warped substrate, measure the actual processing width processed by injection from the predetermined injection position corresponding to the specified processing width, and control the heater and the injection mechanism to set an adjustment amount from the predetermined injection position corresponding to the specified processing width according to the amount of deviation between the measured actual processing width and the specified processing width. [Effects of the Invention]

[0012] According to one aspect of this disclosure, it is possible to provide a substrate processing method and a substrate processing apparatus that can suppress deviations in processing width and improve processing quality even when processing the peripheral edge of the substrate while heating. [Brief explanation of the drawing]

[0013] [Figure 1] This is a plan view showing a schematic configuration of a substrate processing system equipped with a processing unit according to the embodiment of this disclosure. [Figure 2] This figure shows the internal structure of the processing unit shown in Figure 1. [Figure 3] Figure 2 is a schematic plan view showing the configuration of the substrate processing unit included in the processing unit. [Figure 4] This figure shows the configuration of the substrate observation mechanism included in the processing unit shown in Figure 2. [Figure 5] Figure 2 is a schematic diagram illustrating the main components of the processing unit that determines the zero-level position in the upper and lower discharge nozzles. [Figure 6] Figure 2 shows a flowchart illustrating a beveling process as an example of substrate processing operation performed by the processing unit shown in Figure 2. [Figure 7] Figure 6 is a flowchart showing the discharge position adjustment process with temperature control. [Figure 8] This figure shows the main components of a substrate processing apparatus during a process involving temperature-controlled discharge position adjustment. [Modes for carrying out the invention]

[0014] (Introduction) The inventors of this invention diligently investigated the cause of the shift in the processing width when a thin film is removed from the peripheral (outer) portion of a substrate while heating. As a result, they found that one of the causes is warping of the substrate due to thermal expansion caused by heating. They also found that dripping of the processing liquid, etc., occurs in the discharge nozzle due to heating, which is another cause. The amount of warping of the substrate and the amount of dripping in the discharge nozzle are due to thermal expansion and therefore vary depending on the heating temperature.

[0015] Accordingly, the inventors of the present application heat the processing space to a specified heating temperature to warp the substrate and cause dripping at the discharge nozzle, and in this state, perform processing by discharging a processing liquid from a discharge position (ejection position) corresponding to a specified processing width. Then, the actual processing width is measured to obtain a deviation amount (difference, offset amount) between the actual processing width and the specified processing width, and processing is performed by setting an adjustment amount from the ejection position corresponding to the specified processing width in accordance with the obtained deviation amount.

[0016] The processing width corresponds to the distance from the edge of the peripheral portion of the substrate in the radial direction of the substrate. For example, when the processing width is 5 mm, the discharge nozzle is positioned such that the arrival position of the processing liquid discharged from the discharge nozzle on the substrate surface is 5 mm from the edge of the peripheral portion of the substrate, and this position is the discharge position.

[0017] In the following description, the processing width on the upper surface (front surface) side of the substrate is referred to as "upper processing width", and the processing width on the lower surface (back surface) side of the substrate is referred to as "lower processing width"; when there is no particular need to distinguish between the upper and lower (front and back) sides, the term "processing width" is used. In addition, the phrase "heating the processing space to a specified heating temperature" can be replaced with "heating the substrate to a specified heating temperature".

[0018] (Substrate processing system) FIG. 1 is a plan view showing a schematic configuration of a substrate processing system 100 equipped with a processing unit (substrate processing apparatus) 1 according to an embodiment of the present disclosure. This drawing does not show the external appearance of the substrate processing system 100, but is a schematic diagram that clearly illustrates the internal structure of the substrate processing system 100 by omitting an outer wall panel and some other components. The following description is primarily given for the substrate processing system 100, but also serves as a description of a substrate processing method for discharging a processing liquid toward the peripheral portion of a substrate W.

[0019] The substrate processing system 100 is, for example, a single-wafer type apparatus installed in a clean room that processes substrates W on which circuit patterns and the like (hereinafter referred to as "patterns") are formed one by one. Then, in the processing unit 1 provided in the substrate processing system 100, substrate processing using a processing liquid is performed.

[0020] In this embodiment, both main surfaces of the substrate W are referred to as "surfaces." Furthermore, on the substrate W, the surface facing downwards is referred to as the "bottom surface," and the surface facing upwards is referred to as the "top surface." The following explanation will primarily use a processing unit 1, which is used for processing semiconductor wafers, as an example, with reference to the drawings, but the process can be similarly applied to the processing of various other substrates.

[0021] As shown in Figure 1, the substrate processing system 100 has a substrate processing area 110 for processing the substrate W. An indexer section 120 is provided adjacent to this substrate processing area 110. The indexer section 120 has a container holding section 121 that can hold a plurality of containers C for housing the substrate W.

[0022] Furthermore, the indexer unit 120 is equipped with an indexer robot 122 for accessing the container C held by the container holding unit 121 to remove unprocessed substrates W from the container C or to store processed substrates W in the container C. Each container C contains multiple substrates W in a nearly horizontal position.

[0023] The indexer robot 122 comprises a base portion 122a fixed to the device housing, a multi-joint arm 122b rotatably mounted on the base portion 122a around a vertical axis, and a hand 122c attached to the tip of the multi-joint arm 122b. The hand 122c is structured to hold the substrate W placed on its upper surface.

[0024] In the substrate processing area 110, a mounting table 112 is provided to allow substrates W from the indexer robot 122 to be placed on it. In a plan view, a substrate transport robot 111 is positioned approximately in the center of the substrate processing area 110. Furthermore, multiple processing units 1 are arranged to surround this substrate transport robot 111.

[0025] Specifically, multiple processing units 1 are arranged facing the space where the substrate transport robot 111 is located. The substrate transport robot 111 randomly accesses the mounting table 112 with respect to these processing units 1 and transfers the substrate W between the robot and the mounting table 112. Meanwhile, each processing unit 1 performs predetermined processing on the substrate W and corresponds to the substrate processing apparatus of this disclosure.

[0026] In this embodiment, these processing units 1 have the same function. Therefore, parallel processing of multiple substrates W is possible. Note that the mounting table 112 is not necessarily required if the substrate transport robot 111 can directly receive the substrates W from the indexer robot 122.

[0027] (Inside the processing unit) Figure 2 shows the internal structure of the processing unit 1 shown in Figure 1. Figure 3 is a schematic plan view showing the configuration of the substrate processing unit SP included in the processing unit 1 shown in Figure 2. In Figure 2, the dimensions and number of each part may be exaggerated or simplified for ease of understanding.

[0028] As shown in Figures 2 and 3, the processing unit 1 has a structure in which a substrate processing unit SP is arranged in the internal space 12 within the chamber 11. The processing unit 1 comprises the substrate processing unit SP and a control unit (control unit) 10. The processing unit 1 is a device that discharges processing liquid toward the peripheral Ws of a substrate W that rotates within the chamber 11.

[0029] Base support members 16, 16 are fixed to the upper surface of the bottom wall 11a of the chamber 11 by fasteners such as bolts, spaced apart from each other. A base member 17 is fixed to the upper ends of these base support members 16, 16 by fasteners such as bolts. The upper surface of this base member 17 is finished to allow for the installation of a substrate processing unit SP for performing substrate processing on a substrate W, and the substrate processing unit SP is installed on this upper surface. Each part constituting the substrate processing unit SP is electrically connected to a control unit 10 that controls the entire apparatus and operates in accordance with instructions from the control unit 10. The control unit 10 corresponds to the control unit of this disclosure.

[0030] In Figure 1, the processing unit 1 has a transport opening in the side wall facing the substrate transport robot 111, connecting the internal space 12 with the outside of the chamber 11. Therefore, the handle (not shown) of the substrate transport robot 111 can access the substrate processing unit SP through the transport opening. In other words, the transport opening allows for the loading and unloading of substrates W into and out of the internal space 12. A shutter 15 for opening and closing this transport opening is also attached to the side wall.

[0031] A shutter opening / closing mechanism (not shown) is connected to the shutter 15, which opens and closes the shutter 15 in response to an opening / closing command from the control unit 10. More specifically, in the processing unit 1, when an unprocessed substrate W is brought into the chamber 11, the shutter opening / closing mechanism opens the shutter 15, and the unprocessed substrate W is brought into the substrate processing unit SP by the handle of the substrate transport robot 111. In other words, the substrate W is placed on the spin chuck 21 of the substrate processing unit SP with its top surface facing upwards.

[0032] Then, after the substrate is loaded, the handle of the substrate transport robot 111 retracts from the chamber 11, and the shutter opening / closing mechanism closes the shutter 15. Then, within the processing space 12a of the chamber 11, the substrate processing unit SP performs beveling on the peripheral Ws of the substrate W. After the beveling is completed, the shutter opening / closing mechanism reopens the shutter 15, and the handle of the substrate transport robot 111 removes the processed substrate W from the substrate processing unit SP.

[0033] (Circuit board processing) The substrate processing unit SP includes a holding and rotating mechanism 2, a splash prevention mechanism 3, an upper surface protection heating mechanism 4, a discharge mechanism 5, and an atmosphere separation mechanism 6. These mechanisms are mounted on a base member 17. The holding and rotating mechanism 2, the splash prevention mechanism 3, the upper surface protection heating mechanism 4, the discharge mechanism 5, and the atmosphere separation mechanism 6 are arranged in a predetermined relative position.

[0034] (Holding and rotating mechanism) The holding and rotating mechanism 2 includes a substrate holding section 2A that holds the substrate W in a substantially horizontal position with one main surface of the substrate W facing upward, and a rotating mechanism 2B that synchronously rotates the substrate holding section 2A holding the substrate W and a part of the anti-scattering mechanism 3. Therefore, when the rotating mechanism 2B is activated in response to a rotation command from the control unit 10, the substrate W and the rotating cup section 31 of the anti-scattering mechanism 3 are rotated around a rotation axis AX that extends parallel to the vertical direction.

[0035] The substrate holding section 2A is equipped with a spin chuck 21, which is a disc-shaped member smaller than the substrate W. The spin chuck 21 corresponds to an example of a holding table in this disclosure and is made of resin. The upper surface of the spin chuck 21 is substantially horizontal, and the spin chuck 21 is positioned so that its central axis coincides with the rotation axis AX.

[0036] The spin chuck 21 is located inside the chamber 11 and supports the substrate W. A cylindrical rotating shaft portion 22 is connected to the lower surface of the spin chuck 21. The rotating shaft portion 22 extends vertically with its axis aligned with the rotation axis AX. A rotating mechanism 2B is also connected to the rotating shaft portion 22.

[0037] The rotating mechanism 2B includes a motor 23 and a power transmission unit 24. The motor 23 generates rotational driving force to rotate the substrate holding unit 2A and the rotating cup unit 31 of the anti-scattering mechanism 3. The power transmission unit 24 transmits the rotational driving force generated by the motor 23 to the rotating shaft unit 22.

[0038] A through-hole (not shown) is provided in the center of the spin chuck 21, and this through-hole communicates with the internal space of the rotating shaft portion 22. A pump 26 is connected to the internal space via piping 25, which has a valve (not shown) interposed therein. The pump 26 and the valve are electrically connected to the control unit 10 and operate in response to commands from the control unit 10. This allows negative pressure and positive pressure to be selectively applied to the spin chuck 21.

[0039] For example, when the substrate W is placed on the upper surface of the spin chuck 21 in a nearly horizontal position and the pump 26 applies negative pressure to the spin chuck 21, the spin chuck 21 will hold the substrate W by attraction from below. On the other hand, when the pump 26 applies positive pressure to the spin chuck 21, the substrate W becomes removable from the upper surface of the spin chuck 21. Also, when the pump 26 stops suction, the substrate W becomes able to move horizontally on the upper surface of the spin chuck 21.

[0040] A nitrogen gas supply unit 29 is connected to the spin chuck 21 via a pipe 28 located in the center of the rotating shaft portion 22. The nitrogen gas supply unit 29 supplies ambient temperature nitrogen gas, supplied from a utility in the factory where the substrate processing system 100 is installed, to the spin chuck 21 at a flow rate and timing corresponding to the gas supply command from the control unit 10. As a result, the nitrogen gas supply unit 29 circulates the nitrogen gas radially outward from the center on the underside of the substrate W. In this embodiment, nitrogen gas is used, but other inert gases may also be used.

[0041] The rotating mechanism 2B not only rotates the spin chuck 21 integrally with the substrate W, but also has a power transmission unit 27 to rotate the rotating cup portion 31 in synchronization with the rotation. The power transmission unit 27 has an annular member 27a made of a non-magnetic material or resin, a spin chuck-side magnet 27b built into the annular member 27a, and a cup-side magnet 27c built into the lower cup 32, which is a component of the rotating cup portion 31.

[0042] The annular member 27a is attached to the rotating shaft portion 22 and is rotatable together with the rotating shaft portion 22 around the rotating shaft AX. The lower cup 32 is positioned concentrically with the rotating shaft portion 22 and the annular member 27a, with the inner circumferential surface of the lower cup 32 separated from the outer circumferential surface of the annular member 27a by a predetermined distance.

[0043] An engagement pin and a connecting magnet (not shown) are provided on the upper outer edge of the lower cup 32, and these connect the upper cup 33 to the lower cup 32, and this connecting body functions as a rotating cup portion 31. The lower cup 32 is supported on the upper surface of the base member 17 by a bearing (not shown) so as to be rotatable around the rotation axis AX.

[0044] When the motor 23 rotates the annular member 27a together with the rotating shaft 22, the magnetic force between the spin chuck-side magnet 27b and the cup-side magnet 27c causes the lower cup 32 to rotate in the same direction as the annular member 27a while maintaining an air gap with the annular member 27a. As a result, the rotating cup portion 31 rotates around the rotation axis AX. In other words, the rotating cup portion 31 rotates in the same direction as the substrate W and in synchronization with it.

[0045] (Scatter prevention mechanism) The splash prevention mechanism 3 includes a rotating cup portion 31 that can rotate around the rotation axis AX while surrounding the outer circumference of the substrate W held by the spin chuck 21, and a fixed cup portion 34 that is fixedly provided to surround the rotating cup portion 31. The rotating cup portion 31 is provided so as to be able to rotate around the rotation axis AX while surrounding the outer circumference of the rotating substrate W, by connecting the upper cup 33 to the lower cup 32. The droplets collected by the rotating cup portion 31 are recovered together with the gaseous components and collected in the fixed cup portion 34.

[0046] (Top protection heating mechanism) The top surface protection heating mechanism 4 comprises a disc portion 42, an internal heater 421, a heater drive unit 422, a support member 404, and a heating gas supply unit 47, and corresponds to an example of a heater of this disclosure. The disc portion 42 is positioned opposite the substrate W placed on the spin chuck 21. That is, the disc portion 42 is positioned above the upper surface of the substrate W held by the spin chuck 21 and is held in a horizontal position.

[0047] The disc portion 42 incorporates an internal heater 421 that is driven and controlled by a heater drive unit 422. The disc portion 42 has a diameter slightly shorter than the substrate W. The disc portion 42 is supported by a support member 404 such that its lower surface covers the upper surface area of ​​the substrate W, excluding the peripheral edge Ws, from above.

[0048] The lower end of the support member 404 is attached to the center of the disc portion 42. A cylindrical through hole (not shown) is formed so as to penetrate vertically through the support member 404 and the disc portion 42. A central nozzle 45 is inserted vertically through this through hole. This central nozzle 45 is connected to a heating gas supply unit 47 via a pipe 46.

[0049] The heating gas supply unit 47 heats ambient temperature nitrogen gas supplied from the factory where the substrate processing system 100 is installed using a heater 471, and supplies it to the substrate W at a flow rate and timing corresponding to the heating gas supply command from the control unit 10. A ribbon heater 48 is attached to a part of the piping 46. The ribbon heater 48 generates heat in response to the heating command from the control unit 10, heating the nitrogen gas flowing through the piping 46.

[0050] The heated nitrogen gas (hereinafter referred to as "heated gas") is then pumped towards the central nozzle 45 and discharged from the central nozzle 45. For example, when the heated gas is supplied with the disc portion 42 positioned in a processing position close to the substrate W held by the spin chuck 21, the heated gas flows from the center of the space between the upper surface of the substrate W and the disc portion 42 toward the periphery.

[0051] The upper end of the support member 404 is fixed to a beam member 49 that extends horizontally. This beam member 49 is connected to a lifting mechanism (not shown) attached to the upper surface of the base member 17, and is raised and lowered by the lifting mechanism in response to commands from the control unit 10. For example, in Figure 2, when the beam member 49 is positioned downward, the disc portion 42 connected to the beam member 49 via the support member 404 is positioned in the processing position.

[0052] On the other hand, when the lifting mechanism receives a lifting command from the control unit 10 and raises the beam member 49, the disc portion 42, beam member 49, and support member 404 rise together, and the upper cup 33 also rises in conjunction, separating from the lower cup 32. As a result, the space between the spin chuck 21 and the upper cup 33 and disc portion 42 widens, making it possible to load and unload the substrate W into and out of the spin chuck 21.

[0053] (Processing mechanism) As shown in the partially enlarged views of Figures 2 and 3, the discharge mechanism 5 comprises a processing liquid discharge nozzle 51D, a nozzle moving unit 54, a nozzle head 56, and a processing liquid supply unit 52. The nozzle head 56 has processing liquid discharge nozzles 51A, 51B, 51C and a nozzle holder 53. The processing liquid discharge nozzles 51A to 51C are located on the upper side of the substrate W, and the processing liquid discharge nozzle 51D is located on the lower side of the substrate W.

[0054] The discharge mechanism 5 may consist of only the nozzle moving part 54 and the nozzle head 56, or it may consist of only the discharge nozzle 51D, among the processing liquid discharge nozzle 51D, nozzle moving part 54, and nozzle head 56.

[0055] The processing liquid supply unit 52 supplies processing liquid to the processing liquid discharge nozzles 51A to 51D. The processing liquid discharge nozzles 51A to 51D discharge the processing liquid. In Figure 2, two processing liquid supply units 52 are shown, but they are identical.

[0056] In this embodiment, three processing liquid discharge nozzles 51A to 51C are provided, and a processing liquid supply unit 52 is connected to them. The processing liquid supply unit 52 is configured to supply chemical solutions such as SC1 and DHF, or functional water (such as CO2 water) as processing liquids, and SC1, DHF, and functional water can be discharged independently from the three processing liquid discharge nozzles 51A, 51B, and 51C. The chemical solutions such as SC1 and DHF are etching solutions used to etch the substrate W.

[0057] Each processing liquid discharge nozzle 51A to 51C is provided with a discharge port (not shown) on the lower surface of its tip for discharging the processing liquid. The lower parts of each processing liquid discharge nozzle 51A to 51C are positioned in the notch 425 of the disc portion 42, with each discharge port facing the upper surface of the peripheral edge portion Ws of the substrate W. The upper parts of the processing liquid discharge nozzles 51A to 51C are movably attached to the nozzle holder 53 in the radial direction D1. This nozzle holder 53 is connected to a nozzle moving unit 54. The nozzle moving unit 54 is attached to a lifting mechanism, which moves the nozzle moving unit 54 in the vertical direction Z.

[0058] In this embodiment, a processing liquid discharge nozzle 51D and a nozzle support portion 57 are provided below the substrate W held by the spin chuck 21 in order to discharge the processing liquid toward the lower surface of the peripheral edge Ws of the substrate W. The nozzle support portion 57 has a thin-walled cylindrical portion 571 extending in the vertical direction and a flange portion 572 having an annular shape that is folded outward radially at the upper end of the cylindrical portion 571.

[0059] The cylindrical portion 571 has a shape that allows it to be freely inserted into the air gap formed between the annular member 27a and the lower cup 32. The nozzle support portion 57 is fixedly positioned such that the cylindrical portion 571 is freely inserted into the air gap and the flange portion 572 is positioned between the substrate W held by the spin chuck 21 and the lower cup 32.

[0060] Three processing liquid discharge nozzles 51D are attached to the upper peripheral edge of the flange portion 572. Each processing liquid discharge nozzle 51D has a discharge port (not shown) that opens toward the lower surface of the peripheral edge Ws of the substrate W, and is capable of discharging processing liquid supplied from the processing liquid supply unit 52 via the piping 58.

[0061] Hereafter, the processing liquid discharge nozzles 51A to 51C that process the upper surface of the peripheral edge Ws on the substrate W may be referred to as the upper discharge nozzle TS, and the processing liquid discharge nozzle 51D that processes the lower surface of the peripheral edge Ws on the substrate W may be referred to as the lower discharge nozzle BS.

[0062] (Atmosphere separation mechanism) The atmosphere separation mechanism 6 separates the internal space 12 within the chamber 11 into a processing space 12a where beveling of the substrate W can be performed and an outer space 12b of the processing space 12a. The atmosphere separation mechanism 6 is positioned to completely surround the spin chuck 21, the substrate W held by the spin chuck 21, the rotating cup portion 31, and the upper surface protection heating mechanism 4 from above. The atmosphere separation mechanism 6 has a lower sealing cup member 61 and an upper sealing cup member 62. The lower sealing cup member 61 is provided so as to be movable in the vertical direction.

[0063] As the lower sealing cup member 61 descends and is positioned at its lower limit, the upper sealing cup member 62, the lower sealing cup member 61, and the fixed cup portion 34 are connected in the vertical direction. Thus, the upper sealing cup member 62, the lower sealing cup member 61, and the fixed cup portion 34 form a processing space 12a.

[0064] Furthermore, as the lower sealing cup member 61 rises and moves to the retracted position, the upper cup 33 also rises together with it by engaging with the lower sealing cup member 61. This causes the upper cup 33 and the upper surface protection heating mechanism 4 to move upward away from the spin chuck 21. The movement of the lower sealing cup member 61 to the retracted position creates a transport space for the hand of the substrate transport robot 111 to access the spin chuck 21.

[0065] (Substrate observation mechanism) Next, the substrate observation mechanism 7 will be described using Figures 2 and 4. Figure 4 is a diagram showing the configuration of the substrate observation mechanism 7 provided in the processing unit 1 shown in Figure 2. Specifically, reference numeral #401 in Figure 4 is a schematic diagram showing the operation of the substrate observation mechanism 7, and reference numeral #402 in Figure 4 is a perspective view showing the observation head 73 of the substrate observation mechanism 7.

[0066] The substrate observation mechanism 7 is a mechanism for optically observing the peripheral Ws of the substrate W being processed, for the purpose of confirming whether the processing is being carried out properly. The substrate observation mechanism 7 includes a light source unit 71, an imaging unit 72, an observation head 73, and an observation head drive unit 74. The light source unit 71 and the imaging unit 72 are arranged side by side on the base member 17. The light source unit 71 irradiates illumination light toward the observation position in response to an illumination command from the control unit 10. This observation position corresponds to the peripheral Ws of the substrate W, and corresponds to the position where the observation head 73 is shown by a solid line in reference numeral #401 in Figure 4.

[0067] The observation head 73 is capable of reciprocating between an observation position and a retracted position (dotted line) located radially outward from the observation position on the substrate W. An observation head drive unit 74 is connected to the observation head 73. The observation head drive unit 74 is attached to the base member 17. In response to a head movement command from the control unit 10, the observation head drive unit 74 moves the observation head 73 back and forth.

[0068] More specifically, when the substrate W is not being observed, the observation head drive unit 74 moves the observation head 73 to a retracted position for positioning. This keeps the observation head 73 away from the transport path of the substrate W, effectively preventing it from interfering with the substrate W as it is being transported into and out of the chamber 11. On the other hand, when the substrate W is being observed, the observation head drive unit 74 moves the observation head 73 to the observation position in response to a substrate observation command from the control unit 10.

[0069] As shown by reference numeral #402 in Figure 4, the observation head 73 includes a diffuse illumination section 731 having a diffuse surface 731a, a guide section 732 composed of three mirror members 732a, 732b, and 732c, and a holding section 733.

[0070] The diffuse illumination section 731 is made of, for example, PTFE. The diffuse illumination section 731 has a plate shape that extends horizontally, and a notch 7311 is formed at the end on the substrate W side. The vertical size of the notch 7311 is larger than the thickness of the substrate W, and when the observation head 73 is positioned at the observation position, the notch 7311 extends into the peripheral Ws of the substrate W and the region further radially inward from the peripheral Ws.

[0071] The notch 7311 has an inverted C-shape when viewed from the circumferential direction of the substrate W. In addition, the diffuse illumination section 731 has an inclined surface formed along the notch 7311. The inclined surface is a tapered surface that slopes in the direction in which the illumination light travels as it approaches the notch 7311.

[0072] The holding portion 733 is made of, for example, PEEK, and has a notch similar to that of the diffuse illumination portion 731 at its end on the substrate W side. Furthermore, the holding portion 733 is finished in a shape that allows it to be fitted together with the diffuse illumination portion 731.

[0073] When the observation head 73 configured in this way is positioned at the observation position, the diffusion surface 731a is positioned in the illumination area of ​​the light source unit 71. In this positioning state, when the light source unit 71 is turned on by an illumination command from the control unit 10, illumination light is shone onto the illumination area. At this time, the diffusion surface 731a diffusely reflects the illumination light, illuminating the peripheral Ws of the substrate W and its adjacent areas from various directions.

[0074] The imaging unit 72 has an observation lens system composed of an object-side telecentric lens and a CMOS camera. Therefore, of the reflected light guided from the observation head 73, only the light rays parallel to the optical axis of the observation lens system are incident on the sensor surface of the CMOS camera, and an image of the peripheral Ws and adjacent regions of the substrate W is formed on the sensor surface. In this way, the imaging unit 72 images the peripheral Ws and adjacent regions of the substrate W and acquires top, side, and bottom images of the substrate W. The imaging unit 72 then transmits the image data showing these images to the control unit 10.

[0075] (Control unit) As shown in Figure 2, the control unit 10 includes an arithmetic processing unit 10A, a storage unit 10B, a reading unit 10C, an image processing unit 10D, a drive control unit 10E, and a communication unit 10F. The storage unit 10B is composed of a hard disk drive or the like and stores programs for performing bevel processing.

[0076] Here, the program is stored, for example, on a computer-readable recording medium RM (e.g., an optical disk, magnetic disk, magneto-optical disk, etc.), read from the recording medium RM by the reading unit 10C, and stored in the storage unit 10B. Furthermore, the provision of the program is not limited to the recording medium RM, and may be configured to be provided, for example, via a telecommunications line.

[0077] The image processing unit 10D performs various processing on the image captured by the substrate observation mechanism 7. The drive control unit 10E controls each drive unit of the processing unit 1. The communication unit 10F is controlled by the arithmetic processing unit 10A, which communicates with the substrate transport robot 111.

[0078] The arithmetic processing unit 10A is composed of a computer having a CPU (Central Processing Unit) and RAM (Random Access Memory), and in accordance with the program stored in the memory unit 10B (in cooperation with the memory unit 10B), it performs bevel processing on each part of the processing unit 1 as follows. The bevel processing by the processing unit 1 will be explained below with reference to Figure 4.

[0079] In the beveling process, the calculation processing unit 10A performs a discharge position adjustment process with temperature control when the heating temperature is changed. In the discharge position adjustment process with temperature control, the following processes (1) to (4) are performed.

[0080] (1) Heat the processing space 12a to the specified heating temperature to make the substrate W warped, (2) Discharge (inject) a processing liquid (processing material) from a predetermined discharge position (injection position) corresponding to the specified processing width toward the peripheral edge Ws of the warped substrate W, (3) Measure the actual processing width that is discharged and processed from a predetermined discharge position corresponding to the specified processing width. (4) The amount of adjustment from a predetermined discharge position corresponding to the specified processing width is set according to the difference between the measured actual processing width and the specified processing width.

[0081] In this embodiment, the discharge position adjustment process with temperature control, that is, the processes described in (1) to (4) above, are performed automatically each time the heating temperature is changed.

[0082] (Determination of the zero-level position) First, using Figure 5, we will explain the process of determining the zero-level position, which is performed before the beveling process begins. Figure 5 is a schematic diagram of the main parts of the process of determining the zero-level position in the upper discharge nozzle TS and the lower discharge nozzle BS. As mentioned above, the upper discharge nozzle TS corresponds to the processing liquid discharge nozzles 51A to 51C, and the lower discharge nozzle BS corresponds to the processing liquid discharge nozzle 51D. The zero-level position is the position where the processing width, which serves as the reference for the side discharge nozzle TS and the lower discharge nozzle BS in the beveling process, is zero.

[0083] As shown by reference numeral #501 in Figure 5, the upper discharge nozzle TS is moved gradually from the radially outer side of the substrate W, under the control of the control unit 10, towards the substrate W which is adsorbed at the central position of the spin chuck 21. Then, as shown by reference numeral #502 in Figure 5, it is moved to a position where the processing liquid hits the edge (border) of the peripheral Ws of the substrate W, and this position is stored in the storage unit 10B as the zero-level position of the upper discharge nozzle TS.

[0084] Similarly, as shown by reference numeral #503 in Figure 5, the lower discharge nozzle BS is moved little by little from the radially outer side of the substrate W, under the control of the control unit 10, towards the substrate W which is adsorbed at the central position of the spin chuck 21. Then, as shown by reference numeral #504 in Figure 5, it is moved to a position where the processing liquid hits the edge (border) of the peripheral portion Ws of the substrate W, and this position is stored in the storage unit 10B as the zero-level position of the lower discharge nozzle TS.

[0085] The process of determining the zero-level position of the upper discharge nozzle TS and the lower discharge nozzle BS is performed at room temperature (the temperature of the processing space 12a is room temperature). When the upper discharge nozzle TS and the lower discharge nozzle BS are moved to a position where the processing liquid comes into contact with the edge of the peripheral portion Ws of the substrate W, the operator visually determines whether or not the processing liquid is coming into contact with the edge of the peripheral portion Ws of the substrate W. The process of determining the zero-level position is performed before starting the beveling process and serves as a reference when processing the specified processing width during the beveling process.

[0086] (Circuit board processing operation) Figure 6 is a flowchart showing a beveling process performed as an example of substrate processing operation by the processing unit 1 shown in Figure 2. First, the arithmetic processing unit 10A determines whether or not there is a change in the setting of the heating temperature (temperature of the processing space 12a) (S1). If the arithmetic processing unit 10A determines that there is no change, it proceeds to S2; if it determines that there is a change, it proceeds to S9, performs the discharge position adjustment process with temperature control described later, and then proceeds to S2.

[0087] First, let's explain what happens when the process proceeds to S2. The arithmetic processing unit 10A loads the substrate W (S2). Specifically, the arithmetic processing unit 10A sends a loading request for the substrate W to the substrate transport robot 111 via the communication unit 10F and waits until the unprocessed substrate W is brought into the processing unit 1 and placed on the upper surface of the spin chuck 21. Then, the substrate W is placed on the spin chuck 21. At this point, the pump 26 is stopped, and the substrate W is able to move horizontally on the upper surface of the spin chuck 21.

[0088] When the substrate W is placed on the upper surface of the spin chuck 21, the substrate transport robot 111 retracts from the processing unit 1. Subsequently, the arithmetic processing unit 10A uses the centering mechanism (not shown) provided by the substrate processing unit SP to center the substrate W. This eliminates the eccentricity of the substrate W relative to the spin chuck 21, so that the center of the substrate W coincides with the center of the spin chuck 21. After centering the substrate W, the arithmetic processing unit 10A operates the pump 26 to apply negative pressure to the spin chuck 21. As a result, the spin chuck 21 attracts and holds the substrate W from below.

[0089] Next, the arithmetic processing unit 10A prepares for the discharge of the processing liquid (S3). Specifically, the arithmetic processing unit 10A gives a downward command to the lifting mechanism (not shown). In response, the lifting mechanism lowers the lower sealing cup member 61, nozzle head 56, beam member 49, and upper surface protection heating mechanism 4 together. During this downward movement, the upper cup 33 is connected to the lower cup 32. This forms the rotating cup section 31.

[0090] In this state, the lower surface of the disc portion 42 covers the upper surface area of ​​the substrate W, excluding the peripheral edge Ws, from above. Also, the processing liquid discharge nozzles 51A to 51C are positioned within the notch 425 of the disc portion 42, with their discharge ports facing the upper surface of the peripheral edge Ws on the substrate W.

[0091] After the processing liquid discharge nozzles 51A to 51C are positioned, the calculation processing unit 10A issues a rotation command to the motor 23, and the spin chuck 21 and rotating cup section 31 that hold the substrate W begin to rotate. The rotation speed of the substrate W and the rotating cup section 31 is set to, for example, 1800 revolutions per minute.

[0092] Next, the arithmetic processing unit 10A heats the substrate W (S4). Specifically, the arithmetic processing unit 10A controls the heater drive unit 422 to raise the internal heater 421 to the desired temperature. The arithmetic processing unit 10A also issues a heating gas supply command to the heating gas supply unit 47. As a result, nitrogen gas heated by the heater 471, i.e., the heating gas, is pumped from the heating gas supply unit 47 towards the substrate W. This heating gas is heated by the ribbon heater 48 as it passes through the piping 46.

[0093] As a result, the heating gas is supplied to the top surface protection heating mechanism 4 while preventing a temperature drop during gas supply via the piping 46. In the top surface protection heating mechanism 4, the heating gas is heated by the internal heater 421. The heated gas is then discharged towards the space sandwiched between the substrate W and the disc portion 42 near the peripheral edge Ws of the substrate W. Therefore, the upper surface of the peripheral edge Ws of the substrate W is heated intensively.

[0094] Furthermore, the peripheral Ws of the substrate W are also heated by the internal heater 421. As a result, the temperature of the peripheral Ws of the substrate W rises over time, reaching a temperature suitable for beveling, for example, 90°C. In addition, the temperature of areas other than the peripheral Ws also rises to approximately the same temperature due to the heat from the internal heater 421. In other words, in this embodiment, the in-plane temperature of the upper surface of the substrate W is approximately uniform.

[0095] When the temperature of the substrate W reaches a temperature suitable for beveling, the calculation processing unit 10A processes the peripheral Ws of the substrate W with the processing liquid (S5). Specifically, the calculation processing unit 10A moves the processing liquid discharge nozzles 51A to 51C to a discharge position where the discharge ports of the processing liquid discharge nozzles 51A to 51C are above the peripheral Ws of the substrate W and capable of processing a specified upper processing width. The discharge position capable of processing a specified upper processing width is a position obtained by adding an adjustment amount obtained in the discharge position adjustment process with temperature control (see Figure 6), which will be described later, to a predetermined discharge position corresponding to the specified upper processing width.

[0096] Furthermore, the arithmetic processing unit 10A moves the processing liquid discharge nozzle 51D to a discharge position where the discharge port of the processing liquid discharge nozzle 51D is located below the peripheral edge Ws of the substrate W and capable of processing the specified pre-processing width. In this case as well, the discharge position capable of processing the specified pre-processing width is the position obtained by adding an adjustment amount obtained in the discharge position adjustment process with temperature control to a predetermined discharge position corresponding to the specified pre-processing width.

[0097] The processing unit 10A then controls the processing liquid supply unit 52 to supply processing liquid to the processing liquid discharge nozzles 51A to 51D. In other words, a stream of processing liquid is discharged from the processing liquid discharge nozzles 51A to 51C so as to hit the upper surface of the peripheral edge Ws on the substrate W, and a stream of processing liquid is discharged from the processing liquid discharge nozzle 51D so as to hit the lower surface of the peripheral edge Ws on the substrate W. This performs beveling on the peripheral edge Ws of the substrate W.

[0098] By positioning the processing liquid discharge nozzles 51A to 51C in a discharge position capable of processing a specified upper processing width, the processing liquid discharged from the processing liquid discharge nozzles 51A to 51C can accurately process the upper surface of the peripheral Ws of the substrate W to the specified upper processing width. Similarly, by positioning the processing liquid discharge nozzle 51D in a discharge position capable of processing a specified lower processing width, the processing liquid discharged from the processing liquid discharge nozzle 51D can accurately process the lower surface of the peripheral Ws of the substrate W to the specified lower processing width.

[0099] While the processing in step S4 is being performed, the arithmetic processing unit 10A controls the heater drive unit 422 to continue driving the internal heater 421. Alternatively, the arithmetic processing unit 10A may discharge the processing liquid onto the upper surface of the peripheral edge Ws using the processing liquid discharge nozzles 51A to 51C, instead of discharging the processing liquid onto the lower surface of the peripheral edge Ws. Alternatively, the arithmetic processing unit 10A may discharge the processing liquid onto the lower surface of the peripheral edge Ws using the processing liquid discharge nozzle 51D, instead of discharging the processing liquid onto the upper surface of the peripheral edge Ws.

[0100] When the arithmetic processing unit 10A detects the elapsed processing time required for the beveling of the substrate W, it terminates the surface treatment of the substrate W (S6). Specifically, the arithmetic processing unit 10A issues a supply stop command to the processing liquid supply unit 52 and stops the discharge of the processing liquid.

[0101] Subsequently, the arithmetic processing unit 10A issues a command to stop supplying the heating gas to the heating gas supply unit 47, stopping the supply of heating gas from the heating gas supply unit 47 to the substrate W. The arithmetic processing unit 10A also issues a command to stop rotation to the motor 23, stopping the rotation of the spin chuck 21 and the rotating cup unit 31. Furthermore, the arithmetic processing unit 10A controls the heater drive unit 422 to stop the internal heater 421.

[0102] Next, the arithmetic processing unit 10A observes the peripheral Ws of the substrate W to inspect the result of the beveling process (S7). Specifically, the arithmetic processing unit 10A positions the upper cup 33 in a retracted position, similar to when the substrate W is loaded, to form a transport space. Then, the arithmetic processing unit 10A controls the observation head drive unit 74 to bring the observation head 73 closer to the substrate W.

[0103] The processing unit 10A illuminates the peripheral Ws of the substrate W via the observation head 73 by turning on the light source unit 71. The imaging unit 72 receives the reflected light reflected from the peripheral Ws and adjacent areas and images the peripheral Ws and adjacent areas. In other words, while the substrate W is rotating around the rotation axis AX, the imaging unit acquires a peripheral image of the peripheral Ws along the rotation direction of the substrate W from multiple images of the peripheral Ws.

[0104] Then, the arithmetic processing unit 10A controls the observation head drive unit 74 to retract the observation head 73 from the substrate W. In parallel with this, the arithmetic processing unit 10A checks whether the beveling process has been performed well, based on the captured peripheral Ws and adjacent region images, i.e., the peripheral image. In this embodiment, as an example of this check, the processing width processed by the processing liquid from the edge face of the substrate W toward the center of the substrate W is checked from the peripheral image.

[0105] After inspection, the arithmetic processing unit 10A sends an unloading request for the substrate W to the substrate transport robot 111 via the communication unit 10F, and the processed substrate W is discharged from the processing unit 1 (S8). This series of steps is repeated.

[0106] (Discharge position adjustment process with temperature control) Next, using Figures 7 and 8, we will explain the temperature-controlled discharge position adjustment process, which is executed when the arithmetic processing unit 10A determines that there is a change in S1 of Figure 5. Figure 7 is a flowchart of the temperature-controlled discharge position adjustment process in the flowchart of Figure 6. Figure 8 is a diagram showing the main parts of the processing unit 1 in the process of the temperature-controlled discharge position adjustment process. In this embodiment, a dummy substrate of the substrate W is used in the temperature-controlled discharge position adjustment process.

[0107] The arithmetic processing unit 10A loads the dummy board W (S11). Note that the operation of each part in process S11 is the same as in process S2 in Figure 6, so a detailed explanation of the operation is omitted.

[0108] Next, the arithmetic processing unit 10A prepares for the discharge of the processing liquid (S12). The operation of each part in the process of S12 is the same as the process of S3 in Figure 6, so a detailed explanation of the operation is omitted.

[0109] Next, the arithmetic processing unit 10A starts temperature control (temperature adjustment) to adjust the processing space 12a to a heating temperature corresponding to the next process to be executed (S13), and completes the temperature control when the processing space 12a reaches the changed temperature (S14). The operation of each part in processes S13 and S14 is the same as the process in S4 in Figure 6, so a detailed explanation of the operation is omitted.

[0110] Furthermore, when the arithmetic processing unit 10A performs temperature control, if the temperature of the processing space 12a after the change is lower than before the change, it will stop the internal heater 421 and lower the temperature of the processing space 12a by natural cooling, or by using the cooling mechanism if one is provided.

[0111] The determination of the end of temperature control by the arithmetic processing unit 10A may be made using a sensor that measures the temperature of the processing space 12a, or it may be made based on the elapsed time since the start of temperature control. If the temperature of the processing space 12a before the change and the temperature of the processing space 12a after the change are predetermined temperatures, and the temperature of the external space in which the processing unit 1 is installed is also predetermined, the completion of temperature control can be determined by the elapsed time since the start of temperature control. The determination of the completion of heating of the substrate W in the process S4 in Figure 6 is the same.

[0112] Next, the arithmetic processing unit 10A positions the upper discharge nozzle TS to a predetermined discharge position corresponding to the upper processing width specified in the beveling process, and positions the lower discharge nozzle TN to a predetermined discharge position corresponding to the lower processing width specified in the beveling process. Then, the processing liquid is discharged from the positioned upper discharge nozzle TS and lower discharge nozzle TN to process the upper and lower surfaces of the peripheral edge Ws of the dummy substrate W (S15, see #801 in Figure 8). Note that the operation of each part in the process of S15 is the same as the process of S5 in Figure 6, so a detailed explanation of the operation is omitted.

[0113] Next, the arithmetic processing unit 10A observes the peripheral Ws of the dummy substrate W and measures the applied upper processing width and the actual lower processing width in the process performed in S15 (S16, see #802 in Figure 8). Note that the operation of each part in the process of S16 is the same as the process of S7 in Figure 6, so a detailed explanation of the operation is omitted.

[0114] As shown in #803 of Figure 8, by controlling the temperature and heating, the dummy substrate W undergoes thermal expansion and warps according to the heating temperature. In #803 of Figure 8, the upper surface of the dummy substrate W expands due to thermal expansion, and the dummy substrate W warps so that its peripheral edges Ws point downwards. Although not shown in the figure, the dummy substrate W (substrate W) may also warp so that its peripheral edges Ws point upwards.

[0115] Although not shown in the diagram, the upper discharge nozzle TS and the lower discharge nozzle BS may also expand due to heat, causing sagging depending on the heating temperature.

[0116] Therefore, as mentioned above, on the front and back of the dummy substrate W, the liquid application position of the processing solution deviates from the liquid application position when processing the specified upper and lower processing widths, resulting in a gap between the specified processing width and the actual processing width.

[0117] #803 in Figure 8 shows the processing width when the dummy substrate W is not warped and there is no sagging in the upper discharge nozzle TS and the lower discharge nozzle BS. If the specified upper processing width is, for example, 5 mm and the specified lower processing width is, for example, 10 mm, the predetermined discharge positions are obtained by moving the upper discharge nozzle TS 5 mm radially from the zero level position toward the rotation axis AX, and the lower discharge nozzle BS 10 mm radially from the zero level position toward the rotation axis AX. By discharging at these positions, processing can be achieved with the specified processing width.

[0118] However, as shown in #804 of Figure 8, even if the substrate W is warped, or if the upper discharge nozzle TS and lower discharge nozzle BS are sagging in addition to the warping, and the upper discharge nozzle TS is moved to a predetermined discharge position corresponding to each specified processing width, the actual result is that the upper processing width is shorter than 5 mm and the lower processing width is longer than 10 mm.

[0119] Therefore, the calculation processing unit 10A determines the difference between the actual upper processing width measured in S16 and the specified upper processing width, and sets the adjustment amount from a predetermined injection position corresponding to the specified upper processing width at the upper discharge nozzle TS according to the determined difference. Similarly, the calculation processing unit 10A determines the difference between the actual lower processing width measured in S16 and the specified lower processing width, and sets the adjustment amount from a predetermined injection position corresponding to the specified lower processing width at the lower discharge nozzle BS according to the determined difference, and stores (registers) it in the storage unit 10B (S17).

[0120] Here, the adjustment amount is positive if it becomes shorter than the specified processing width, moving it closer to the rotation axis AX. Conversely, if it becomes longer than the specified processing width, it is negative, moving it away from the rotation axis AX.

[0121] By registering the adjustment amount obtained in this way, which takes into account the amount of deviation, in the actual beveling process, as described above, in S5 of Figure 6, the discharge position is adjusted to take into account the warp of the substrate W, or the warp plus the sag of the upper discharge nozzle TS and the lower discharge nozzle BS, so that processing can be performed within the specified processing width.

[0122] After this, the arithmetic processing unit 10A requests the unloading of the dummy board W, and the dummy board W is removed from the processing unit 1 (S18). Note that the operation of each part in the process of S18 is the same as the process of S8 in Figure 6, so the specific operation will not be explained. After this, the arithmetic processing unit 10A exits the flow in Figure 7, returns to the flow in Figure 6, and proceeds to process S2.

[0123] As described above, even if the heating temperature is changed, the processing unit 1 can adjust the discharge position corresponding to the specified processing width, thereby suppressing the deviation of the actual processing width from the specified processing width and improving the processing quality of beveling and other processes.

[0124] Furthermore, in processing unit 1, when the heating temperature is changed, the discharge position adjustment process accompanied by temperature control is automatically executed. Therefore, each time the heating temperature (temperature of the processing space 12a) is changed, the operator does not need to adjust the discharge position to match the changed temperature, thereby improving work efficiency.

[0125] In this embodiment, the discharge position adjustment process with temperature control is performed automatically as described in steps (1) to (4) above, but it is not necessary to perform it automatically, and it may be performed with the intervention of a human operator or other person.

[0126] Furthermore, while the above embodiment illustrates the use of a processing solution for treating the peripheral Ws of the substrate W, it is not limited to the use of a processing solution. It can also be applied to methods such as removing the thin film by exposure using laser light (processing material) or removing the thin film using gas (processing material). Also, although this embodiment describes an example using a dummy substrate W, this does not preclude the use of a substrate W for adjustment.

[0127] (Other embodiments) In Embodiment 1, a discharge position adjustment process accompanied by temperature control is performed each time the heating temperature is changed. However, if the adjustment amount set in (4) is stored in the storage unit 10B in association with the corresponding heating temperature and the corresponding processing width, and the adjustment amount associated with the changed heating temperature is stored in the storage unit 10B when the specified heating temperature is changed, the processes from (1) to (4) above may be omitted, and the adjustment amount may be obtained from the storage unit 10B.

[0128] In other words, between S1 and S9 in the flowchart of Figure 6, a process is performed to check whether the arithmetic processing unit 10A is already registered. If it is determined that it is not registered, the process proceeds to S9. If it is determined that it is registered, the process proceeds to S2.

[0129] The present invention is not limited to the embodiments described above, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of the present invention. [Explanation of symbols]

[0130] 1. Processing Unit (Substrate Processing Equipment) 2A Board holding part (holding table) 7. Substrate observation mechanism 10 Control Unit (Control Section) 10A Arithmetic Processing Unit (Control Unit) 10B Memory Unit 12a Processing space 51A, 51B, 51C, 51D Processing liquid discharge nozzle (discharge mechanism) 471 Heater W board Ws Peripheral area

Claims

1. A substrate processing method comprising specifying the heating temperature and processing width of a processing space, and injecting a processing material from a predetermined injection position corresponding to the specified processing width toward the peripheral edge of a substrate rotating in the processing space heated to the specified heating temperature, (1) Heat the processing space to the specified heating temperature to make the substrate warped, (2) The processing material is injected from the predetermined injection position corresponding to the specified processing width toward the peripheral edge of the warped substrate, (3) Measure the actual processing width that is injected and processed from the predetermined injection position corresponding to the specified processing width, (4) A substrate processing method comprising setting an adjustment amount from the predetermined injection position corresponding to the specified processing width, according to the amount of deviation between the measured actual processing width and the specified processing width.

2. The substrate processing method according to claim 1, wherein the processes (1) to (4) above are automatically performed each time the specified heating temperature is changed.

3. The adjustment amount set in (4) above is stored in the memory unit in correspondence with the corresponding heating temperature and the corresponding processing width. The substrate processing method according to claim 1, wherein when the specified heating temperature is changed, if the adjustment amount associated with the changed heating temperature is stored in the storage unit, the processes from (1) to (4) above are not performed, and the adjustment amount is obtained from the storage unit.

4. The substrate processing method according to any one of claims 1 to 3, wherein the processing material is a processing liquid.

5. A substrate processing apparatus that specifies the heating temperature and processing width of a processing space, and injects a processing material from a predetermined injection position corresponding to the specified processing width toward the peripheral edge of a substrate rotating in the processing space heated to the specified heating temperature, A holding table for holding the substrate, An injection mechanism for injecting the aforementioned processed material, A heater for heating the processing space, Control unit and The control unit comprises a memory that stores at least information indicating the control operation, The control unit cooperates with the memory, The processing space is heated to the specified heating temperature to cause the substrate to be warped. The processing material is injected from a predetermined injection position corresponding to the specified processing width toward the peripheral edge of the warped substrate, The actual processing width that is injected and processed from the predetermined injection position corresponding to the specified processing width is measured. In accordance with the amount of deviation between the measured actual processing width and the specified processing width, the adjustment amount from the predetermined injection position corresponding to the specified processing width is set. A substrate processing apparatus that controls the heater and the injection mechanism.

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