Multilayer electronic components

Abstract

This invention provides a multilayer electronic component that offers excellent moisture resistance, reduced porosity, and improved toughness and bending crack resistance. [Solution] The stacked electronic component includes a main body 110 including a first to sixth surface, which includes a capacitance forming portion Ac including a dielectric layer 111 and internal electrodes 121 and 122, and a first cover portion 112 and a second cover portion 113 arranged on both sides in the thickness direction of the capacitance forming portion, respectively; a first margin portion 114 arranged on the fifth surface, a second margin portion 115 arranged on the sixth surface, a third margin portion 116 arranged on the first surface, and a fourth margin portion 117 arranged on the second surface; and a first external electrode and a second external electrode arranged on the third and fourth surfaces, respectively, wherein the first to fourth margin portions are arranged on the main body in a spiral structure.

Description

[Technical Field]

[0001] This invention relates to a stacked electronic component. [Background technology]

[0002] A multilayer ceramic capacitor (MLCC), a type of multilayer electronic component, is a chip-type capacitor that is mounted on the printed circuit boards of various electronic products such as liquid crystal displays (LCDs), plasma display panels (PDPs), computers, smartphones, and mobile phones, and plays the role of charging or discharging electricity.

[0003] Such multilayer ceramic capacitors can be used as components in various electronic devices due to their advantages of being small, yet guaranteeing high capacitance, and being easy to implement. As various electronic devices such as computers and mobile devices become smaller and more powerful, the demand for smaller and higher-capacitance multilayer ceramic capacitors is increasing.

[0004] To miniaturize and increase the capacitance of multilayer ceramic capacitors, it is necessary to maximize the effective electrode area (increase the effective volume fraction required to achieve the desired capacitance). In order to realize such miniaturized and high-capacitance multilayer ceramic capacitors, a manufacturing method is applied in which the internal electrodes are exposed in the width direction of the main body during the manufacturing process. This maximizes the area of ​​the internal electrodes in the width direction through a design without margins. Furthermore, after fabricating such a main body, a ceramic green sheet for the margin area is separately attached to the exposed electrode surface in the width direction of the main body before firing, and then sintered to form the margin area.

[0005] However, due to the characteristics of multilayer ceramic capacitors, which are becoming smaller and thinner, there is a possibility that the dielectric layer and margin will become less resistant to moisture as their thickness decreases. In addition, the method of attaching the ceramic green sheet for the margin may expose the interface between the main body and the ceramic green sheet for the margin to the outside. This exposed interface can become an open path for moisture, plating solution, etc., which may lead to problems such as being very vulnerable to short circuits and a decrease in insulation resistance (IR low). [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Korean Published Patent Gazette No. 10-2022-0080289 [Overview of the project] [Problems that the invention aims to solve]

[0007] One of the problems that this invention aims to solve is to provide a multilayer electronic component with excellent moisture resistance reliability.

[0008] One of the problems that this invention aims to solve is to provide a stacked electronic component with reduced pores.

[0009] One of the problems that this invention aims to solve is to provide a multilayer electronic component with excellent toughness and bending crack resistance.

[0010] However, some of the problems that the present invention aims to solve are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Means for solving the problem]

[0011] A stacked electronic component according to one embodiment of the present invention includes a capacitor forming portion including a dielectric layer and internal electrodes arranged alternately with the dielectric layer in the thickness direction, and a first cover portion and a second cover portion respectively arranged on both end faces in the thickness direction of the capacitor forming portion, and a main body including a first and second surface facing each other in the thickness direction, a third and fourth surface connected to the first and second surface and facing each other in the length direction, and a fifth and sixth surface connected to the first, second, third and fourth surface and facing each other in the width direction, and a first margin portion arranged on the fifth surface, a second margin portion arranged on the sixth surface, a third margin portion arranged on the first surface, and a fourth margin portion arranged on the second surface, and a first external electrode and a second external electrode respectively arranged on the third and fourth surfaces, wherein the first margin portion, second margin portion, third margin portion and fourth margin portion can be arranged on the main body in a helical structure. [Effects of the Invention]

[0012] One of the several effects of the present invention is to improve the moisture resistance reliability of multilayer electronic components.

[0013] One of the several effects of the present invention is to reduce the pores in multilayer electronic components.

[0014] One of the several effects of the present invention is to improve the toughness and bending crack resistance of multilayer electronic components.

[0015] However, the diverse yet beneficial advantages and effects of the present invention are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Brief explanation of the drawing]

[0016] [Figure 1] A schematic perspective view of a stacked electronic component according to one embodiment of the present invention is shown. [Figure 2] A schematic cross-sectional view along the line I-I' in Figure 1 is shown. [Figure 3] A schematic cross-sectional view taken along the line II-II' in FIG. 1 is shown. [Figure 4] (a) to (c) are schematic cross-sectional views taken at the same position as the line II-II' in FIG. 1 in a multilayer electronic component according to another embodiment of the present invention. [Figure 5] (a) to (c) are schematic enlarged views corresponding to P1 to P3 in FIG. 3, respectively. [Figure 6] (a) is a moisture resistance reliability evaluation graph of a comparative example, and (b) is a moisture resistance reliability evaluation graph of an example. DETAILED DESCRIPTION OF THE INVENTION

[0017] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Therefore, the shapes and sizes of elements in the drawings may be exaggerated for clearer explanation, and elements denoted by the same reference numerals in the drawings are the same elements.

[0018] In addition, in order to clearly explain the present invention in the drawings, portions unrelated to the description are omitted. The sizes and dimensions of each configuration shown in the drawings are arbitrarily shown for convenience of description, and thus the present invention is not necessarily limited to those illustrated. Constituent elements having the same function within the scope of the same idea will be described using the same reference numerals. Furthermore, throughout the specification, when a certain part is described as "comprising" a certain constituent element, it does not exclude other constituent elements but means that it can further include other constituent elements, unless specifically stated to the contrary.

[0019] In the drawings, the Z direction can be defined as the thickness direction or the first direction, the X direction as the length direction or the second direction, and the Y direction as the width direction or the third direction.

[0020] Furthermore, the stacking direction may be either the thickness direction or the width direction.

[0021] Multilayer electronic components Figure 1 schematically shows a perspective view of a stacked electronic component according to one embodiment of the present invention; Figure 2 schematically shows a cross-sectional view along the line I-I' in Figure 1; Figure 3 schematically shows a cross-sectional view along the line II-II' in Figure 1; Figures 4(a) to (c) schematically show cross-sectional views at the same position as the line II-II' in Figure 1 in a stacked electronic component according to another embodiment of the present invention; Figures 5(a) to (c) schematically show enlarged views according to P1 to P3 in Figure 3, respectively; Figure 6(a) is a humidity resistance reliability evaluation graph of a comparative example, and (b) is a humidity resistance reliability evaluation graph of an example.

[0022] Hereinafter, with reference to Figures 1 to 6(b), a multilayer electronic component according to one embodiment of the present invention will be described in detail. However, although a multilayer ceramic capacitor will be described as an example of a multilayer electronic component, the present invention can also be applied to various electronic products that utilize dielectric compositions, such as inductors, piezoelectric elements, varistors, or thermistors.

[0023] A stacked electronic component 100 according to one embodiment of the present invention includes a dielectric layer 111 and a capacitance forming portion Ac including internal electrodes 121 and 122 arranged alternately with the dielectric layer 111 in the thickness direction, and a first cover portion 112 and a second cover portion 113 respectively arranged on both end faces of the capacitance forming portion Ac in the thickness direction, a first surface 1 and a second surface 2 facing each other in the thickness direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and facing each other in the length direction, and a first surface 1, a second surface 2, a third surface 3 and a fourth surface 4 connected to the first surface 1, the second surface 2, the third surface 3 and the fourth surface 4 and facing each other in the width direction The device includes a main body including a fifth surface 5 and a sixth surface 6, a first margin portion 114 arranged on the fifth surface 5, a second margin portion 115 arranged on the sixth surface 6, a third margin portion 116 arranged on the first surface 1, and a fourth margin portion 117 arranged on the second surface 2, and a first external electrode 131 and a second external electrode 132 arranged on the third surface 3 and the fourth surface 4, respectively, wherein the first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117 can be arranged on the main body 110 in a spiral structure.

[0024] The main body 110 may have dielectric layers 111 and internal electrodes 121 and 122 stacked alternately.

[0025] More specifically, the main body 110 may include a capacitance forming section Ac which includes first internal electrodes 121 and second internal electrodes 122 arranged alternately inside the main body 110 and facing each other with a dielectric layer 111 in between, thereby forming a capacitance.

[0026] There are no particular restrictions on the specific shape of the main body 110, but as shown in the figure, the main body 110 can be a hexahedron or a similar shape. Due to the shrinkage of the ceramic particles contained in the main body 110 during the firing process, the main body 110 may not be a perfectly straight hexahedron, but it may be substantially hexahedron-shaped.

[0027] The main body 110 may have a first surface 1 and a second surface 2 facing each other in the thickness direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and facing each other in the length direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1, the second surface 2, the third surface 3 and the fourth surface 4 and facing each other in the width direction.

[0028] The plurality of dielectric layers 111 forming the main body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated to such an extent that it is difficult to confirm the boundaries without using a Scanning Electron Microscope (SEM).

[0029] The raw material for forming the dielectric layers 111 is not limited as long as sufficient capacitance can be obtained. In general, perovskite (ABO3) materials can be used, for example, barium titanate-based materials, lead composite perovskite-based materials, strontium titanate-based materials, and the like can be used. The barium titanate-based material may include BaTiO3-based ceramic particles. Examples of the ceramic particles include BaTiO3, and (Ba in which a part of Ca (calcium), Zr (zirconium), etc. is solid-dissolved in BaTiO3 1-x Ca x )TiO3 (0<x<1), Ba(Ti 1-y Ca y )O3 (0<y<1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0<x<1, 0<y<1) or Ba(Ti 1-y Zr y )O3 (0<y<1), etc.

[0030] In addition, for the raw material forming the dielectric layers 111, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to particles such as barium titanate (BaTiO3) according to the object of the present invention.

[0031] On the other hand, in order to distinguish it from the dielectric layers included in the cover portions 112, 113 and margin portions 114, 115, 116, and 117 described later, the dielectric layer included in the capacitance forming portion Ac can be defined as the first dielectric layer, the dielectric layers included in the cover portions 112, 113 can be defined as the second dielectric layer, and the dielectric layers included in the margin portions 114, 115, 116, and 117 can be defined as the third dielectric layer.

[0032] Furthermore, the first to third dielectric layers can be formed using a dielectric material such as barium titanate (BaTiO3), and can therefore contain a dielectric microstructure after firing. The dielectric microstructure can include multiple crystal grains, grain boundaries located between adjacent crystal grains, and triple points located at points where three or more grain boundaries meet, and can contain multiple crystal grains, grain boundaries, and triple points.

[0033] The thickness td of the dielectric layer 111 does not need to be particularly limited.

[0034] However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the thickness td of the dielectric layer 111 may be 1.0 μm or less, 0.8 μm or less, or 0.6 μm or less, and to achieve ultra-miniaturization, it may be 0.5 μm or less, or 0.4 μm or less.

[0035] Here, the thickness td of the dielectric layer 111 can mean the thickness td of the dielectric layer 111 that is placed between the first internal electrode 121 and the second internal electrode 122.

[0036] In this case, the thickness td of the dielectric layer 111 may be a concept that includes the thickness td of any one of the multiple dielectric layers 111, or it may be a concept that includes the respective thickness td of all of the dielectric layers 111.

[0037] Furthermore, the thickness td of the dielectric layer 111 may mean the average thickness td of a single dielectric layer 111, the average thickness td of each of the multiple dielectric layers 111, or the average thickness td of the multiple dielectric layers 111.

[0038] The average thickness td of the dielectric layer 111 can be measured by scanning an image of the cross-section of the main body 110 in the length and thickness directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average thickness td of a single dielectric layer 111 can be calculated as the average value obtained by measuring the thickness of that dielectric layer 111 at five equally spaced points in the length direction in the scanned image. These five equally spaced points can be specified in the capacitance forming section Ac. Furthermore, by extending this measurement of average values ​​to three dielectric layers 111 and measuring the average values, the average thickness td of multiple dielectric layers 111 can be further generalized.

[0039] The internal electrodes 121 and 122 may be stacked alternately with the dielectric layer 111.

[0040] The internal electrodes 121 and 122 may include a first internal electrode 121 and a second internal electrode 122, which are arranged alternately facing each other across the dielectric layer 111 that constitutes the main body 110, and can be exposed on the third surface 3 and the fourth surface 4 of the main body 110, respectively.

[0041] More specifically, the first internal electrode 121 can be separated from the fourth surface 4 and exposed via the third surface 3, and the second internal electrode 122 can be separated from the third surface 3 and exposed via the fourth surface 4. The first external electrode 131 is positioned on the third surface 3 of the main body 110 and connected to the first internal electrode 121, and the second external electrode 132 is positioned on the fourth surface 4 of the main body 110 and connected to the second internal electrode 122.

[0042] In other words, the first internal electrode 121 is not connected to the second external electrode 132, but can be connected to the first external electrode 131, and the second internal electrode 122 is not connected to the first external electrode 131, but can be connected to the second external electrode 132. In this case, the first internal electrode 121 and the second internal electrode 122 can be electrically isolated from each other by the dielectric layer 111 placed in between them.

[0043] On the other hand, the main body 110 can be formed by alternately laminating a first ceramic green sheet printed with a paste for the first internal electrode, which will become the first internal electrode 121, and a second ceramic green sheet printed with a paste for the second internal electrode, which will become the second internal electrode 122, and then firing them. Screen printing or gravure printing can be used as the printing method for the conductive paste for the internal electrodes, but the present invention is not limited thereto.

[0044] The materials forming the internal electrodes 121 and 122 are not particularly limited, and any material with excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 may include one or more of the following: nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0045] The thickness te of the internal electrodes 121 and 122 does not need to be particularly limited, and in the following description of the thickness te of the internal electrodes 121 and 122, it can refer to the thickness te of the first internal electrode 121 and the second internal electrode 122, respectively.

[0046] In order to achieve miniaturization and high capacitance of the stacked electronic component 100, the thickness te of the internal electrodes 121 and 122 may be 1.0 μm or less, 0.8 μm or less, or 0.6 μm or less, and in order to achieve ultra-miniaturization, it may be 0.5 μm or less, or 0.4 μm or less.

[0047] In this case, the thickness te of the internal electrodes 121 and 122 may be a concept that includes the thickness te of at least one of the multiple internal electrodes 121 and 122, or it may be a concept that includes the thickness te of all of the internal electrodes 121 and 122.

[0048] In this case, the thickness te of the internal electrodes 121 and 122 may be a concept that includes the thickness te of at least one of the multiple internal electrodes 121 and 122, or it may be a concept that includes the thickness te of each of the internal electrodes 121 and 122.

[0049] Furthermore, the thickness te of the internal electrodes 121 and 122 may mean the average thickness te of one internal electrode 121 or 122, or the average thickness te of each of the multiple internal electrodes 121 or 122, or the average thickness te of the multiple internal electrodes 121 or 122.

[0050] The average thickness te of the internal electrodes 121 and 122 can be measured by scanning an image of the cross-section of the main body 110 in the length and thickness directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average thickness te of one internal electrode 121 or 122 can be calculated as the average value obtained by measuring the thickness of one internal electrode at five equally spaced points in the length direction in the scanned image. These five equally spaced points can be specified in the capacitance forming section Ac. Furthermore, by extending this measurement of average values ​​to three internal electrodes 121 or 122, the average thickness te of multiple internal electrodes 121 or 122 can be further generalized.

[0051] On the other hand, the main body 110 may include cover portions 112 and 113 that are positioned on both end surfaces (end-surfaces) in the thickness direction of the volume forming portion Ac.

[0052] Specifically, it may include a first cover portion 112 positioned on one surface of the volume-forming portion Ac in the thickness direction, and a second cover portion 113 positioned on the other surface of the volume-forming portion Ac in the thickness direction. More specifically, for example, it may include a first cover portion 112 positioned at the bottom of the volume-forming portion Ac in the thickness direction, and a second cover portion 113 positioned at the top of the volume-forming portion Ac in the thickness direction.

[0053] In the present invention, the descriptions of the cover portions 112 and 113 may, unless otherwise contradictory, be descriptions of the first cover portion 112 and the second cover portion 113, respectively.

[0054] The first cover portion 112 and the second cover portion 113 can be formed by arranging or stacking a single second dielectric layer or two or more second dielectric layers in the thickness direction on the upper and lower surfaces of the capacitance forming portion Ac, respectively, and can essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0055] The first cover portion 112 and the second cover portion 113 do not include internal electrodes 121 and 122 and may contain the same dielectric material as the first dielectric layer 111 of the capacitance forming portion Ac. That is, the first cover portion 112 and the second cover portion 113 may contain a dielectric material, for example, a barium titanate (BaTiO3) based dielectric material.

[0056] More specifically, the first cover portion 112 and the second cover portion 113 may contain barium titanate (BaTiO3)-based main and minor components.

[0057] The minor components contained in the first cover portion 112 and the second cover portion 113 may include, but are not limited to, at least one of calcium (Ca), magnesium (Mg), silicon (Si), aluminum (Al), manganese (Mn), tin (Sn), gallium (Ga), and phosphorus (P).

[0058] In the present invention, "main component" can mean a component that accounts for a relatively large weight ratio, atomic ratio, or mole ratio compared to other components, and can mean a component that accounts for 50 wt% or more of any one component of the stacked electronic component 100, for example, a component that accounts for 50 at% or more of the weight of the dielectric layer 111, a component that accounts for 50 at% or more of the atomic ratio, or a component that accounts for 50 mol% or more of the mole ratio.

[0059] In this invention, "sub-component" can mean a component that occupies a relatively small weight ratio, atomic ratio, or mole ratio compared to other components, and can mean a component of any one component of the stacked electronic component 100, for example, a component of less than 50 wt% based on the weight of the dielectric layer 111, a component of less than 50 at% based on the number of atoms, or a component of less than 50 mol% based on the number of moles.

[0060] Furthermore, as a more specific example of a method for measuring the content of elements contained in any one component of the stacked electronic component 100 in the present invention, the components can be analyzed using the energy dispersive X-ray spectroscopy (EDS) mode of a scanning electron microscope (SEM), the EDS mode of a transmission electron microscope (TEM), or the EDS mode of a scanning transmission electron microscope (STEM). First, a thin analytical sample is prepared in the area to be measured using a focused ion beam (FIB). Then, the surface damage layer of the thinned sample is removed using xenon (Xe) or argon (Ar) ion milling, and then each component to be measured is mapped in the image obtained using SEM-EDS, TEM-EDS, or STEM-EDS to perform qualitative / quantitative analysis. In this case, the qualitative / quantitative analysis of each component can be expressed in terms of the content of each element, for example, mass percentage (wt%), atomic percentage (at%), or mole percentage (mol%), and can also be expressed in terms of the content of one specific component relative to the content of another specific component.

[0061] Another method involves crushing the chip to select the region to be measured, and then analyzing the specific components of the selected region containing dielectric microstructure using instruments such as an inductively coupled plasma spectrometer (ICP-OES) or inductively coupled plasma mass spectrometer (ICP-MS).

[0062] In the present invention, at least one of the first cover portion 112 and the second cover portion 113 may contain gallium (Ga), and at least one of the cover portions 112 and 113 may have an atomic percentage of gallium (Ga) of 0.1 at% or more and 1 at% or less, based on 100 at% titanium (Ti). This can be interpreted as each of the cover portions 112 and 113 having an atomic percentage of gallium (Ga) of 0.1 at% or more and 1 at% or less, based on 100 at% titanium (Ti).

[0063] Gallium (Ga) is a low-temperature sintering aid that can induce densification of the dielectric microstructure before grain growth is complete, thereby suppressing the formation of pores. It can also improve moisture resistance reliability by blocking the dielectric breakdown voltage (BDV) due to electric field concentration and the penetration pathway of moisture.

[0064] The cover portions 112 and 113 are made of 100 at% titanium (Ti) as a base, and the atomic percentage of gallium (Ga) is between 0.1 at% and 1 at%. By doing so, the firing temperature of the cover portions 112 and 113 can be reduced, the number of pores can be decreased, and the density can be improved, thereby improving moisture resistance reliability.

[0065] If the atomic percentage of gallium (Ga) in the cover portions 112 and 113 is less than 0.1 at% relative to 100 at% titanium (Ti), the density may not be sufficiently improved, and the effect of improving moisture resistance reliability may be minimal. If the atomic percentage of gallium (Ga) in the cover portions 112 and 113 is greater than 1 at% relative to 100 at% titanium (Ti), the dispersibility in the dielectric slurry state before firing may decrease, potentially leading to the formation of aggregates. This may prevent sufficient sintering density from being achieved, or the firing of the cover portions 112 and 113 may not proceed sufficiently.

[0066] At least one of the first cover portion 112 and the second cover portion 113 may contain phosphorus (P), and at least one of the cover portions 112 and 113 may have an atomic percentage of phosphorus (P) of 0.1 at% or more and 1 at% or less, based on 100 at% titanium (Ti). This can be interpreted as meaning that each of the first cover portion 112 or the second cover portion 113 has an atomic percentage of phosphorus (P) of 0.1 at% or more and 1 at% or less, based on 100 at% titanium (Ti).

[0067] Phosphorus (P) can play a role in controlling grain growth in crystal grains, contributing to the formation of crystal grains of uniform size. It can also induce densification of the dielectric microstructure, suppressing the formation of pores, and improve moisture resistance reliability by blocking the dielectric breakdown voltage (BDV) and moisture penetration pathways caused by electric field concentration phenomena.

[0068] The cover portions 112 and 113 are based on 100 at% titanium (Ti), and the atomic percentage of phosphorus (P) is between 0.1 at% and 1 at%. This allows for the formation of crystal grains of uniform size, reduces the number of pores, and improves density, thereby enhancing mechanical strength and moisture resistance reliability.

[0069] If the atomic percentage of phosphorus (P) in the cover portions 112 and 113 is less than 0.1 at% relative to 100 at% titanium (Ti), it may be difficult to form crystal grains of uniform size, potentially reducing mechanical strength, or the density may not be sufficiently improved, resulting in only a slight improvement in moisture resistance reliability. If the atomic percentage of phosphorus (P) in the cover portions 112 and 113 is greater than 1 at% relative to 100 at% titanium (Ti), excessive grain growth may make it difficult to form crystal grains of uniform size, potentially reducing mechanical strength, or the dispersibility in the dielectric slurry state before firing may decrease, leading to the formation of aggregates. This may result in insufficient sintering density or insufficient firing of the cover portions 112 and 113.

[0070] The average size of the multiple crystal grains CG1, CG2 contained in at least one of the cover portions, the first cover portion 112 and the second cover portion 113, may be 225 μm or more and 275 μm or less.

[0071] This can be interpreted as meaning that the average size of the multiple crystal grains CG1 and CG2 contained in each cover portion 112 and 113 is between 225 μm and 275 μm.

[0072] By ensuring that the average size of the multiple crystal grains CG1 and CG2 contained in each cover portion 112 and 113 is between 225 μm and 275 μm, superior mechanical strength can be achieved through the use of appropriately sized crystal grains.

[0073] The size of the crystal grains CG1 and CG2 contained in at least one of the first cover portion 112 and the second cover portion 113 may be 200 μm or more and 300 μm or less.

[0074] This can be interpreted as meaning that the size of the crystal grains CG1 and CG2 contained in each cover portion 112 and 113 is between 200 μm and 300 μm.

[0075] By ensuring that the size of the crystal grains CG1 and CG2 contained in each cover portion 112 and 113 is between 200 μm and 300 μm, superior mechanical strength can be achieved due to the uniform size of the crystal grains.

[0076] On the other hand, the thickness tc of the cover portions 112 and 113 does not need to be particularly limited.

[0077] However, in order to more easily achieve miniaturization and high capacitance of the stacked electronic component 100, the thickness tc of the cover portions 112 and 113 may be 40 μm or less, preferably 30 μm or less, and in the case of ultra-small products, it may be more preferably 20 μm or less.

[0078] Here, the thickness tc of the cover portions 112 and 113 can be said to represent the average thickness of the cover portions 112 and 113.

[0079] Furthermore, the average thickness tc of the cover portions 112 and 113 may mean the average thickness tc of the first cover portion 112 and the second cover portion 113, respectively, or it may mean the average thickness tc of the first cover portion 112 and the second cover portion 113.

[0080] The average thickness tc of the cover sections 112 and 113 can be measured by scanning an image of the cross-section of the main body 110 in the length and thickness directions using a scanning electron microscope (SEM) at 10,000x magnification. More specifically, it can mean the average value calculated by measuring the thickness at five equally spaced points in the length direction in an image scanned from one cover section 112 or 113.

[0081] Furthermore, the average thickness tc of the cover portions 112 and 113 measured by the method described above can be substantially the same as the average thickness of the cover portions 112 and 113 in the cross-section in the width and thickness direction of the main body 110.

[0082] On the other hand, the stacked electronic component 100 may include margin portions 114, 115, 116, and 117, which are regions extending from any one side of the main body 110.

[0083] More specifically, the margin portions 114, 115, 116, and 117 may include a first margin portion 114 and a second margin portion 115, which are regions from the widthwise plane of the main body 110, and a third margin portion 116 and a fourth margin portion 117, which are regions from the thicknesswise plane of the main body 110. For example, this could include a first margin portion 114 located on the fifth plane 5, a second margin portion 115 located on the sixth plane 6, a third margin portion 116 located on the first plane 1, and a fourth margin portion 117 located on the second plane 2.

[0084] The margins 114, 115, 116, and 117 essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0085] The method for forming the margin portions 114, 115, 116, and 117 may be as follows, but is not limited thereto. First, conductive paste is applied to the ceramic green sheet applied to the capacitance forming portion Ac, except where the first margin portion 114 and the second margin portion 115 are formed, to form the internal electrodes 121 and 122, and cover portions 112 and 113 are formed in the thickness direction of the capacitance forming portion Ac. In order to suppress the step caused by the internal electrodes 121 and 122, the body 110 is cut so that the internal electrodes 121 and 122 after lamination are exposed on the fifth surface 5 and the sixth surface 6 of the body 110, and then a single third dielectric layer or two or more third dielectric layers can be arranged or laminated in a helical structure surrounding the body 110. More specifically, referring to Figure 3, the third margin portion 115, the fourth margin portion 117, the first margin portion 114, and the third margin portion 116 may be attached to and arranged or stacked on the main body in that order, but the invention is not limited to this.

[0086] In other words, the first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117 can be arranged on the main body 110 in a spiral structure.

[0087] Here, the statement that the first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117 are arranged in a spiral structure on the main body 110 can mean that the first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117 are arranged clockwise or counterclockwise on the main body 110, and is not limited to the first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117 being arranged sequentially in a spiral structure. For example, it can mean that the second margin section 115, the fourth margin section 117, the first margin section 114, and the third margin section 116 are arranged in a spiral structure on the main body 110, that is, the second margin section 115, the fourth margin section 117, the first margin section 114, and the third margin section 116 are arranged in a clockwise direction, but it is not limited to this.

[0088] In this case, the first margin portion 114 and the second margin portion 115 can be asymmetrical with respect to each other, and the third margin portion 116 and the fourth margin portion 117 can be asymmetrical with respect to each other.

[0089] More specifically, the average lengths in the thickness direction of the first margin portion 114 and the second margin portion 115 may differ from each other, and the average lengths in the width direction of the third margin portion 116 and the fourth margin portion 117 may differ from each other. Here, the average length in the thickness direction or the average length in the width direction may mean the average thickness.

[0090] Furthermore, at least one of the following, based on one direction in the thickness direction, does not need to be located on a line in the width direction: one end surface of the first margin portion 114 and one end surface of the second margin portion 115; and based on the other direction in the thickness direction, at least one of the following, does not need to be located on a line in the width direction: one end surface of the third margin portion 116 and one end surface of the fourth margin portion 117; and based on the other direction in the width direction, at least one of the following, does not need to be located on a line in the thickness direction: one end surface of the third margin portion 116 and one end surface of the fourth margin portion 117; and based on the other direction in the width direction, at least one of the following, does not need to be located on a line in the thickness direction:

[0091] Here, the fact that one or the other end face in the thickness direction of the first margin portion 114 and the second margin portion 115 is not located on a line in the width direction, or that one or the other end face in the width direction of the third margin portion 116 and the fourth margin portion 117 is not located on a line in the thickness direction, is not limited to meaning that they are deviated from the exact same line in the thickness direction or width direction. That is, if one or the other face in the thickness direction of the first margin portion 114 is not exposed to the outside, and one or the other face in the thickness direction of the second margin portion 115 is not exposed to the outside, it can mean that the corresponding one or the other face of the first margin portion 114 and the second margin portion 115 is not located on a line in the width direction. Similarly, if one or the other surface in the width direction of the third margin portion 116 is not exposed to the outside, and one or the other surface in the width direction of the fourth margin portion 117 is not exposed to the outside, it can be said that the corresponding one or the other surface of the third margin portion 116 and the fourth margin portion 117 are not located on a line in the thickness direction.

[0092] Referring to Figure 3, the lower end face of the first margin portion 114 in the thickness direction and the lower end face of the second margin portion 115 in the thickness direction are substantially located on the same line in the width direction, but the upper end face of the first margin portion 114 in the thickness direction and the upper end face of the second margin portion 115 in the thickness direction are substantially not located on the same line in the width direction. In this case, it can be considered that one or the other face of the first margin portion 114 and the second margin portion 115 that are corresponding to each other are not located on the line in the width direction.

[0093] The first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117 are arranged on the main body 110 in a spiral structure, which increases the penetration path of moisture from the outside to the internal electrodes 121 and 122, preventing oxidation or short-circuiting of the internal electrodes 121 and 122, and thereby improving the reliability of the stacked electronic component 100.

[0094] Conventional methods, such as attaching margin sheets to the sides of the main body in the width direction to form a margin, result in relatively short pathways for moisture penetration from the outside. While various attempts have been made to improve moisture resistance reliability, in the present invention, when the margin is arranged on the main body in a spiral structure, the pathways for moisture penetration from the outside are relatively long, and structural changes can lead to significantly improved moisture resistance reliability.

[0095] The first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117 do not contain internal electrodes 121 and 122 and may contain the same material as the first dielectric layer 111. That is, the first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117 may contain the same dielectric material as the first dielectric layer 111 of the capacitance forming portion Ac, for example, a barium titanate (BaTiO3) based dielectric material.

[0096] The first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117 may contain barium titanate (BaTiO3)-based main and minor components.

[0097] The minor components contained in the first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117 may include, but are not limited to, at least one of calcium (Ca), magnesium (Mg), silicon (Si), aluminum (Al), manganese (Mn), tin (Sn), gallium (Ga), and phosphorus (P).

[0098] The average size of the multiple crystal grains MG1, MG2 contained in at least one of the margin portions among the first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117 may be 100 μm or more and 150 μm or less.

[0099] This can be interpreted as meaning that the average size of the multiple crystal grains MG1, MG2, MG3, and MG4 contained in each margin portion 114, 115, 116, and 117 is between 100 μm and 150 μm.

[0100] By ensuring that the average size of the multiple crystal grains MG1, MG2, MG3, and MG4 contained in each margin section 114, 115, 116, and 117 is between 100 μm and 150 μm, the moisture penetration pathways are increased, resulting in superior moisture resistance reliability.

[0101] The size of the crystal grains contained in at least one of the margin portions, the first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117, may be between 75 μm and 175 μm.

[0102] This can be interpreted as meaning that the size of the crystal grains MG1, MG2, MG3, and MG4 contained in each margin section 114, 115, 116, and 117 is between 75 μm and 175 μm.

[0103] By ensuring that the crystal grains MG1, MG2, MG3, and MG4 contained in each margin section 114, 115, 116, and 117 are between 75 μm and 175 μm in size, the uniform size of the crystal grains may result in virtually no pores, increasing the moisture penetration pathways and enabling superior moisture resistance.

[0104] On the other hand, parts of the first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117 are in contact with each other, and boundary surfaces that separate them can exist in the contact areas between the margin portions 114, 115, 116, and 117.

[0105] For example, the first margin portion 114 and the third margin portion 116, and the first margin portion 114 and the fourth margin portion 117 are in contact, and there may be boundary surfaces that separate the contact areas between the first margin portion 114 and the third margin portion 116, and between the contact areas between the first margin portion 114 and the fourth margin portion 117.

[0106] In this invention, "separated" can mean, but is not limited to, two regions being separated by physical differences, chemical differences, and / or simple optical differences. The separation between regions can also be determined by the presence or absence of an "interface." An interface can mean a surface in which two adjacent regions are separable from each other. For example, it can mean a state in which the regions are separable by differences in components determined by EDS analysis using equipment such as a scanning electron microscope (SEM), or by differences in the size of crystal grains.

[0107] More specifically, for example, the difference in the average size of multiple crystal grains contained in one of the margin portions 114, 2, 3, and 4, and another margin portion adjacent to that margin portion, can be 10 μm or more. If the difference in the average size of the multiple crystal grains is 10 μm or more, then adjacent margin portions can be said to be separated. For example, if the average size of multiple crystal grains MG1 contained in the first margin portion 114 is 120 μm, and the average size of multiple crystal grains MG3 contained in the third margin portion 116 is 130 μm, then the first margin portion 114 and the third margin portion 116 can be said to be separated from each other.

[0108] More specifically, to give another example, one of the first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117, and another margin portion adjacent to that margin portion, can have a difference of 0.1 at% or more in the atomic percentage of the same subcomponent, based on 100 at% titanium (Ti). If the difference in the atomic percentage of the same subcomponent is 0.1 at% or more, then the adjacent margin portions can be said to be separated. Here, the same subcomponent can mean a single identical subcomponent, and the atomic percentage of the subcomponent can mean the average atomic percentage of the subcomponent measured in one margin portion. For example, if the first margin portion 114 contains 0.5 at% magnesium (Mg) based on 100 at% titanium (Ti), and the third margin portion 116 contains 0.6 at% magnesium (Mg) based on 100 at% titanium (Ti), then the first margin portion 114 and the third margin portion 116 can be said to be distinct from each other.

[0109] Furthermore, one of the first cover portion 112 and the second cover portion 113 is in contact with one of the margin portions among the first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117, and a boundary surface can exist that separates the regions where the cover portions 112 and 113 and the margin portions 114, 115, 116, and 117 are in contact.

[0110] The interface separating adjacent cover portions and margin portions is the same as described above, and therefore will be omitted.

[0111] More specifically, for example, the difference in the average size of multiple crystal grains contained in one of the first cover portion 112 and the second cover portion 113 and one of the margin portions adjacent to the first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117 can be 25 μm or more. When the difference in the average size of multiple crystal grains is 25 μm or more, it can be said that the adjacent cover portion and margin portion are separated. For example, if the average size of multiple crystal grains CG1 contained in the first cover portion 112 is 200 μm, and the average size of multiple crystal grains MG1 contained in the first margin portion 114 adjacent to the first cover portion 112 is 175 μm, then it can be said that the first cover portion 112 and the first margin portion 114 are separated from each other.

[0112] To give a more specific example, one of the first cover portion 112 and the second cover portion 113 and one of the margin portions adjacent to the above cover portion, the difference in the atomic percentage of the same subcomponent can be 0.1 at% or more, based on 100 at% titanium (Ti). If the difference in the atomic percentage of the same subcomponent is 0.1 at% or more, then the adjacent cover portion and the margin portion can be said to be separate. For example, if the first cover portion 112 contains 0.1 at% gallium (Ga) based on 100 at% titanium (Ti), and the first margin portion 114 contains 0 at% gallium (Ga) based on 100 at% titanium (Ti) (meaning it does not contain any gallium), then the first cover portion 112 and the first margin portion 114 can be said to be separate from each other.

[0113] On the other hand, the thickness wm of the margin portions 114, 115, 116, and 117 does not need to be particularly limited. In the following, the explanation of the thickness wm of the margin portions 114, 115, 116, and 117 can mean the length wm in the width direction of the first margin portion 114 and the second margin portion 115, or the length wm in the thickness direction of the third margin portion 116 and the fourth margin portion 117, and can also mean the average thickness.

[0114] To more easily achieve miniaturization and increased capacitance of the stacked electronic component 100, the thickness wm of the margin portions 114, 115, 116, and 117 may be 40 μm or less, preferably 30 μm or less, and more preferably 20 μm or less for ultra-small products.

[0115] Here, the thickness wm of the margin sections 114, 115, 116, and 117 can be said to represent the average width wm of the margin sections 114, 115, 116, and 117.

[0116] Furthermore, the average thickness wm of margin portions 114, 115, 116, and 117 can mean the average thickness wm of the first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117, respectively, or it can mean the average thickness wm of the first margin portion 114, the second margin portion 115, the third margin portion 116, and the fourth margin portion 117.

[0117] The average thickness wm of margin portions 114, 115, 116, and 117 can be measured by scanning an image of the cross-section in the width and thickness directions of the region including margin portions 114, 115, 116, and 117 with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, it can mean the average value calculated by measuring the thickness at five equally spaced points in an image scanned from a single margin portion.

[0118] One embodiment of the present invention describes a structure in which a stacked electronic component 100 has two external electrodes 131 and 132. However, the number and shape of the external electrodes 131 and 132 can be changed according to the form of the internal electrodes 121 and 122 or other purposes.

[0119] The external electrodes 131 and 132 are positioned on the main body 110 and can be connected to the internal electrodes 121 and 122.

[0120] More specifically, the external electrodes 131 and 132 may include a first external electrode 131 and a second external electrode 132, which are arranged on the third surface 3 and the fourth surface 4 of the main body 110, respectively, and connected to a first internal electrode 121 and a second internal electrode 122, respectively. That is, the first external electrode 131 may be arranged on the third surface 3 of the main body and connected to the first internal electrode 121, and the second external electrode 132 may be arranged on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0121] Furthermore, the external electrodes 131 and 132 may be arranged extending from a portion of the first surface 1 and the second surface 2 of the main body 110, or extending from a portion of the fifth surface 5 and the sixth surface 6 of the main body 110. That is, the first external electrode 131 may be arranged on the third surface 3 of the main body 110 and on a portion of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110, and the second external electrode 132 may be arranged on the fourth surface 4 of the main body 110 and on a portion of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110.

[0122] The external electrodes 131 and 132 may be formed from any material that has electrical conductivity, such as metal, and the specific material may be determined by considering electrical properties, structural stability, etc. Furthermore, they may have a multilayer structure.

[0123] For example, the external electrodes 131 and 132 may include first electrode layers 131a, 131a placed on the main body 110, and second electrode layers 131b, 132b placed on the first electrode layers 131a and 132a.

[0124] Here, it is preferable that the first electrode layers 131a, 132a and the second electrode layers 131b, 132b are layers that are separated from each other. However, it is not limited to this, and they may be separated according to the order of the manufacturing process, and the first electrode layers 131a, 132a and the second electrode layers 131b, 132b may be observed as a single layer without being separated from each other.

[0125] The first electrode layers 131a and 132a may be formed by transferring a sheet containing a conductive metal onto the main body 110, or by applying a conductive paste for external electrodes containing a conductive metal to the main body 110 and then firing it, or by dipping the main body 110 in a conductive paste for external electrodes containing a conductive metal, but are not limited to these methods.

[0126] As a more specific example for the first electrode layers 131a and 132a, the first electrode layers 131a and 132a may be fired electrodes containing a conductive metal and glass.

[0127] As the conductive metal contained in the first electrode layers 131a and 132a, a material with excellent electrical conductivity can be used. For example, the conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but is not particularly limited thereto.

[0128] Furthermore, the glass contained in the first electrode layers 131a and 132a can play a role in improving the bonding with the main body 110.

[0129] The second electrode layers 131b and 132b can play a role in improving mounting characteristics, and may be plated layers formed on the first electrode layers 131a and 132a by a plating method, but are not particularly limited thereto.

[0130] The types of the second electrode layers 131b and 132b are not particularly limited and may include, for example, at least one of nickel (Ni), tin (Sn), silver (Ag), palladium (Pd), and alloys thereof.

[0131] The second electrode layers 131b and 132b may be a single layer or multiple layers.

[0132] More specifically, for example, the second electrode layers 131b and 132b may be nickel (Ni) electrode layers or tin (Sn) electrode layers, and may be formed in a manner in which nickel (Ni) electrode layers and tin (Sn) electrode layers are formed sequentially on the first electrode layers 131a and 132a, or may be formed in a manner in which tin (Si) electrode layers, nickel (Ni) electrode layers and tin (Si) electrode layers are formed sequentially. Furthermore, the second electrode layers 131b and 132b may include multiple nickel (Ni) electrode layers and / or multiple tin (Sn) electrode layers.

[0133] There is no particular limit to the size of the stacked electronic component 100.

[0134] However, in order to achieve both miniaturization and high capacitance simultaneously, the thickness of the dielectric layer and internal electrodes must be reduced and the number of layers increased. Therefore, the effects of the present invention may become more pronounced in a stacked electronic component 100 having a size of 1005 (length × width: 1.0 mm × 0.5 mm, with length and width satisfying an error of ±10%) or less.

[0135] Furthermore, the width of the stacked electronic component 100 may be greater than its length.

[0136] The present invention will be described in more detail below with reference to test examples, but this is intended to aid in a concrete understanding of the invention, and the scope of the present invention is not limited by the test examples.

[0137] (Example test) For the comparative example, 20 sample chips were prepared, one with a main body in which a volume-forming section and a cover section formed in the thickness direction of the volume-forming section, as in the conventional method, and another with a margin section formed on the side surface in the width direction of the main body and an external electrode formed thereon.

[0138] In this embodiment, 20 sample chips were fabricated in which a main body was formed with a volume-forming section and a cover section in the thickness direction of the volume-forming section, and first to fourth margin sections were formed on the side surfaces in the width direction and the top and bottom surfaces in the thickness direction of the main body in a spiral arrangement as shown in [Figure 3], and external electrodes were formed.

[0139] Figure 6(a) shows the humidity resistance reliability evaluation graph for the comparative example, and Figure 6(b) shows the humidity resistance reliability evaluation graph for the example.

[0140] Humidity resistance reliability was measured when 20 sample chips from the comparative example and examples were subjected to a voltage of 6.3V for 8 hours under temperature conditions of 85°C and relative humidity conditions of 85%, with an initial insulation resistance (IR0) of 10 8 With Ω as the reference, the insulation resistance (IR) is 10 6 Sample chips with a resistance of Ω or less were judged to have poor moisture resistance reliability.

[0141] In the comparative example, three sample chips were found to be defective, whereas in the example, no defective sample chips were observed.

[0142] This confirms that when four margin sections are arranged spirally on the outside of the main unit, the moisture resistance reliability is improved.

[0143] As described above, embodiments and test examples of the present invention have been explained in detail. However, the present invention is not limited by the embodiments and accompanying drawings described above, but is limited by the claims provided. Therefore, within the scope of the technical idea of ​​the present invention as described in the claims, various forms of substitution, modification, and alteration are possible by persons with ordinary skill in the art, and these also fall within the scope of the present invention.

[0144] Furthermore, the term "embodiment" as used in this invention does not mean that each "embodiment" is the same as another, but is provided to highlight and describe the unique and distinct features of each. However, the above-presented embodiments do not preclude their realization in combination with features of another embodiment. For example, even if a matter described in one particular embodiment is not described in another embodiment, it can be understood as a description related to the other embodiment, unless there is a description in the other embodiment that contradicts or is contrary to that matter.

[0145] The terms used in this invention are used solely to describe one embodiment and are not intended to limit the invention. In this context, singular expressions may include plural expressions unless the context clearly indicates otherwise. [Explanation of symbols]

[0146] 100: Stacked Electronic Components 110: Main unit 111: Dielectric layer 112, 113: Cover section 114, 115, 116, 117: Margin section 121, 122: Internal electrode 131, 132: External electrode

Claims

1. A body comprising a capacitance forming portion including a dielectric layer and internal electrodes arranged alternately with the dielectric layer in the thickness direction, and a first cover portion and a second cover portion respectively arranged on both end faces in the thickness direction of the capacitance forming portion, the body comprising a first surface and a second surface facing each other in the thickness direction, a third surface and a fourth surface connected to the first surface and the second surface and facing each other in the second direction, and a fifth surface and a sixth surface connected to the first surface, the second surface, the third surface and the fourth surface and facing each other in the width direction, A first margin portion arranged on the fifth surface, a second margin portion arranged on the sixth surface, a third margin portion arranged on the first surface, and a fourth margin portion arranged on the second surface, The set includes a first external electrode and a second external electrode, which are arranged on the third and fourth surfaces, respectively. The first margin portion, the second margin portion, the third margin portion, and the fourth margin portion are arranged in a spiral structure on the main body, forming a stacked electronic component.

2. The stacked electronic component according to claim 1, wherein the first margin portion and the second margin portion are asymmetrical with respect to each other, and the third margin portion and the fourth margin portion are asymmetrical with respect to each other.

3. The average lengths of the first margin portion and the second margin portion in the thickness direction are different from each other. The stacked electronic component according to claim 1, wherein the average lengths in the width direction of the third margin portion and the fourth margin portion are different from each other.

4. With respect to one direction in the thickness direction, at least one of the end faces of the first margin portion and the end face of the second margin portion, and with respect to the other direction in the thickness direction, at least one of the other end faces of the first margin portion and the other end face of the second margin portion, is not located on the line in the width direction. The laminated electronic component according to claim 1, wherein at least one of the end faces of the third margin portion and the fourth margin portion, with reference to one direction in the width direction, and at least one of the other end face of the third margin portion and the other end face of the fourth margin portion, with reference to the other direction in the width direction, are not located on the line in the thickness direction.

5. The stacked electronic component according to claim 1, wherein a portion of the first margin portion, the second margin portion, the third margin portion, and the fourth margin portion are in contact with each other, and a boundary surface exists between the regions in contact with each other.

6. The first margin portion, the second margin portion, the third margin portion, and the fourth margin portion each contain a plurality of crystal grains. The stacked electronic component according to claim 1, wherein the difference in average size between one of the first margin portion, the second margin portion, the third margin portion, and the fourth margin portion and one other margin portion adjacent to the first margin portion is 10 μm or more.

7. The first margin portion, the second margin portion, the third margin portion, and the fourth margin portion each contain a plurality of crystal grains. The stacked electronic component according to claim 1, wherein the average size of the plurality of crystal grains contained in at least one of the margin portions, the first margin portion, the second margin portion, the third margin portion, and the fourth margin portion, is 100 μm or more and 150 μm or less.

8. The first margin portion, the second margin portion, the third margin portion, and the fourth margin portion each contain a plurality of crystal grains. The stacked electronic component according to claim 1, wherein the size of the crystal grains contained in at least one of the first margin portion, the second margin portion, the third margin portion, and the fourth margin portion is 75 μm or more and 175 μm or less.

9. The first margin portion, the second margin portion, the third margin portion, and the fourth margin portion each contain a minor component comprising at least one of calcium (Ca), magnesium (Mg), silicon (Si), aluminum (Al), manganese (Mn), tin (Sn), gallium (Ga), and phosphorus (P), and titanium (Ti). The stacked electronic component according to claim 1, wherein one of the first margin portion, the second margin portion, the third margin portion, and the fourth margin portion, and another margin portion adjacent to the first margin portion, have a difference of 0.1 at% or more in the atomic percentage of the same subcomponent, based on 100 at% titanium (Ti).

10. The stacked electronic component according to claim 1, wherein the average thickness of at least one of the first margin portion, the second margin portion, the third margin portion, and the fourth margin portion is 40 μm or less.

11. The first cover portion and the second cover portion each contain a plurality of crystal grains. The stacked electronic component according to claim 1, wherein the average size of the multiple crystal grains contained in each of the first cover portion and at least one of the second cover portion is 225 μm or more and 275 μm or less.

12. The first cover portion and the second cover portion each contain a plurality of crystal grains. The stacked electronic component according to claim 1, wherein the size of the crystal grains contained in at least one of the first cover portion and the second cover portion is 200 μm or more and 300 μm or less.

13. At least one of the first cover portion and the second cover portion includes titanium (Ti) and gallium (Ga). The stacked electronic component according to claim 1, wherein at least one cover portion has an atomic percentage of gallium (Ga) of 0.1 at% or more and 1 at% or less, based on 100 at% titanium (Ti).

14. At least one of the first cover portion and the second cover portion contains titanium (Ti) and phosphorus (P). The stacked electronic component according to claim 1, wherein at least one cover portion has an atomic percentage of phosphorus (P) of 0.1 at% or more and 1 at% or less, based on 100 at% titanium (Ti).

15. The stacked electronic component according to claim 1, wherein the average thickness of at least one of the first cover portion and the second cover portion is 40 μm or less.

16. The stacked electronic component according to claim 1, wherein one of the first cover portion and the second cover portion and a portion of the first margin portion, the second margin portion, the third margin portion and the fourth margin portion are in contact with each other, and a boundary surface exists that separates the region where the cover portion and the margin portion are in contact with each other.

17. The first cover portion and the second cover portion and the first margin portion, the second margin portion, the third margin portion and the fourth margin portion each contain a plurality of crystal grains. The stacked electronic component according to claim 1, wherein the difference in the average size of multiple crystal grains contained in one of the first cover portion and the second cover portion and one of the first margin portion, second margin portion, third margin portion and fourth margin portion adjacent to the one cover portion is 25 μm or more.

18. The first cover portion and the second cover portion and the first margin portion, the second margin portion, the third margin portion and the fourth margin portion each contain a plurality of crystal grains. The average size of the multiple crystal grains contained in each of the first cover portion and at least one of the second cover portion is 225 μm or more and 275 μm or less. The stacked electronic component according to claim 1, wherein the average size of the plurality of crystal grains contained in at least one of the margin portions, the first margin portion, the second margin portion, the third margin portion, and the fourth margin portion, is 100 μm or more and 150 μm or less.

19. The first cover portion and the second cover portion and the first margin portion, the second margin portion, the third margin portion and the fourth margin portion each contain a plurality of crystal grains. The size of the crystal grains contained in at least one of the first and second cover portions is 200 μm or more and 300 μm or less. The stacked electronic component according to claim 1, wherein the size of the crystal grains contained in at least one of the first margin portion, the second margin portion, the third margin portion, and the fourth margin portion is 75 μm or more and 175 μm or less.

20. The first cover portion and the second cover portion and the first margin portion, the second margin portion, the third margin portion and the fourth margin portion each contain a minor component comprising at least one of calcium (Ca), magnesium (Mg), silicon (Si), aluminum (Al), manganese (Mn), tin (Sn), gallium (Ga), and phosphorus (P), and titanium (Ti). A stacked electronic component according to any one of claims 1 to 19, wherein one of the first cover portion and the second cover portion, and one of the first margin portion, second margin portion, third margin portion and fourth margin portion adjacent to the one cover portion, have a difference of 0.1 at% or more in the atomic percentage of the same minor component, based on 100 at% titanium (Ti).

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