Semiconductor equipment

Abstract

The objective is to provide a technology that can avoid damage to semiconductor devices caused by heat generation resulting from point contact of a contact probe with electrode terminals. [Solution] The semiconductor device comprises a semiconductor element 19, an insulating substrate 20 on which the semiconductor element 19 is mounted, a case 3 surrounding the outer periphery of the insulating substrate 20, an electrode terminal 1 having one end portion 1a extending laterally with a first hole 6, an intermediate portion 1b including a portion extending vertically and located inside the case 3, and another end portion 1c electrically connected to the semiconductor element 19, and a lid 2 having a second hole 7 and covering the upper part of the insulating substrate 20 above the semiconductor element 19. The end portion 1a of the electrode terminal 1 is positioned on the lid 2 such that the first hole 6 and the second hole 7 overlap in a top view. The end portion 1a of the electrode terminal 1 is provided with a pair of reinforcing portions protruding toward the lid 2 at positions that are inward from both ends of the electrode terminal 1 in the width direction and facing each other via the first hole 6.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device.

Background Art

[0002] Conventionally, there is a semiconductor device having a structure in which a part of a plate-shaped electrode terminal is exposed to the outside of a case, and the exposed part is bent along the outer surface of the case (see, for example, Patent Document 1).

Prior Art Literature

Patent Literature

[0003]

Patent Document 1

Summary of Invention

Problem to be Solved by the Invention

[0004] However, in the technology described in Patent Document 1, when a part of the electrode terminal is bent, stress concentrates on a part of the periphery of the hole in the electrode terminal. This hole is a hole through which a bolt for connection to a bus bar of a peripheral device is inserted. As a result, a part of the electrode terminal is bent in a state where the portion is curved.

[0005] When a contact probe is brought into contact with an electrode terminal to conduct electricity, point contact portions occur in the contact of the contact probe, and Joule heat generated by discharge at the point contact portions may damage the semiconductor device.

[0006] Therefore, an object of the present disclosure is to provide a technology capable of avoiding damage to a semiconductor device caused by heat generation generated by point contact of a contact probe with an electrode terminal.

Means for Solving the Problem

[0007] The semiconductor device according to this disclosure comprises a semiconductor element, an insulating substrate on which the semiconductor element is mounted, a case surrounding the outer periphery of the insulating substrate, an electrode terminal having one end with a first hole extending laterally, an intermediate portion located inside the case and including a portion extending vertically, and another end electrically connected to the semiconductor element, and a lid with a second hole covering the upper part of the insulating substrate above the semiconductor element, wherein the one end of the electrode terminal is positioned on the lid such that the first hole and the second hole overlap in a top view, and the one end of the electrode terminal is provided with a pair of reinforcing portions protruding toward the lid at positions that are inward from both ends of the electrode terminal in the width direction and facing each other via the first hole. [Effects of the Invention]

[0008] According to this disclosure, when one end of the electrode terminal is bent so that one end extends laterally, a pair of reinforcing parts abut the lid. This suppresses curvature around the first hole in the electrode terminal after bending, and improves the flatness around the first hole in the electrode terminal. As a result, the contact area of ​​the contact probe with respect to the electrode terminal is improved, and damage to the semiconductor device caused by heat generated by point contact of the contact probe with respect to the electrode terminal can be avoided. [Brief explanation of the drawing]

[0009] [Figure 1] Figure 1 is a schematic cross-sectional view of a semiconductor device according to Embodiment 1. [Figure 2] Figure 2 is a schematic diagram showing the state of the electrode terminals of the semiconductor device according to Embodiment 1 after bending. [Figure 3] Figure 3 is a schematic diagram showing the state of the electrode terminals of a semiconductor device according to a modified example of Embodiment 1 after bending the terminals. [Figure 4] Figure 4 is a schematic diagram showing the state of the electrode terminals of the semiconductor device according to Embodiment 2 after bending. [Figure 5]Figure 5 is a schematic side view showing the state after bending the electrode terminal when a rectangular prism-shaped beam portion is provided on the electrode terminal in Embodiment 2. [Figure 6] Figure 6 is a schematic side view showing the state after bending the electrode terminal when a triangular prism-shaped beam portion is provided on the electrode terminal in Embodiment 2. [Figure 7] Figure 7 is a schematic side view showing the state after bending the electrode terminal when a semi-cylindrical beam portion is provided on the electrode terminal in Embodiment 2. [Figure 8] Figure 8 is a schematic diagram showing the state of the electrode terminals of the semiconductor device according to Embodiment 3 after bending. [Figure 9] Figure 9 is a schematic cross-sectional view showing the process of attaching the upper electrode terminal of the semiconductor device according to Embodiment 4 to the lower electrode terminal. [Figure 10] Figure 10 is a schematic diagram showing the process of attaching the upper electrode terminal of the semiconductor device according to Embodiment 5 to the lower electrode terminal. [Figure 11] Figure 11 is a schematic cross-sectional view showing the process of attaching the upper electrode terminal of the semiconductor device according to Embodiment 6 to the lower electrode terminal. [Figure 12] Figure 12 is a schematic diagram showing the process of attaching the upper electrode terminal of the semiconductor device according to Embodiment 7 to the lower electrode terminal. [Figure 13] Figure 13 is a schematic diagram showing the process of attaching the upper electrode terminal of the semiconductor device according to Embodiment 8 to the lower electrode terminal. [Figure 14] Figure 14 is a schematic diagram showing the state of the electrode terminals of a semiconductor device related to the relevant technology before bending. [Figure 15] Figure 15 is a schematic diagram showing the temporary bending state of the electrode terminals of a semiconductor device related to the relevant technology. [Figure 16] Figure 16 is a schematic diagram showing the final bending state of the electrode terminals of a semiconductor device related to the relevant technology. [Figure 17] Figure 17 is a schematic cross-sectional view showing the state of the electrode terminals of a semiconductor device related to the relevant technology after bending. [Figure 18]FIG. 18 is a schematic cross-sectional view showing a state where a contact probe is brought into contact with a curved electrode terminal in a related art, and the contact probe makes point contact with the electrode terminal. [Figure 19] FIG. 19 is a schematic cross-sectional view showing a state where a contact probe is brought into contact with an uncurved electrode terminal in a related art, and the contact probe makes surface contact with the electrode terminal. MODE FOR CARRYING OUT THE INVENTION

[0010] <Embodiment 1> Embodiment 1 will be described below with reference to the drawings. FIG. 1 is a schematic cross-sectional view of the semiconductor device according to Embodiment 1.

[0011] As shown in FIG. 1, the semiconductor device includes a base plate 22, an insulating substrate 20, a semiconductor element 19, a case 3, an electrode terminal 1 which is a signal terminal, a main terminal 1A, and a lid 2.

[0012] The base plate 22 is formed of a high thermal conductivity member such as copper or aluminum. The insulating substrate 20 is bonded onto the base plate 22 via a bonding material 23. The bonding material 23 is solder, silver paste, or the like. The case 3 is formed into a frame shape from engineering plastic such as polyphenylene sulfide (PPS). The case 3 is bonded onto the base plate 22 with, for example, an adhesive (not shown) so as to surround the outer periphery of the insulating substrate 20.

[0013] The electrode terminal 1 and the main terminal 1A are integrally formed with the case 3 by insert molding. The electrode terminal 1 is formed in a C-shape in cross-section and has one end 1a, an intermediate portion 1b, and the other end 1c. The one end 1a of the electrode terminal 1 is exposed to the outside and extends laterally. Specifically, the one end 1a of the electrode terminal 1 extends along the upper end of the case 3 towards the inner circumference of the case 3. The intermediate portion 1b of the electrode terminal 1 is provided inside the case 3 and includes a portion that extends in the vertical direction. The other end 1c of the electrode terminal 1 extends from the lower end of the intermediate portion 1b towards the inner circumference of the case 3. The one end 1a of the electrode terminal 1 is bent laterally in the terminal bending process. Details of the terminal bending process will be described later.

[0014] The main terminal 1A is formed in an L-shape in cross-section. One end of the main terminal 1A is exposed to the outside and extends along the upper edge of the case 3 toward the outer circumference of the case 3. The other end of the main terminal 1A extends toward the inner circumference of the case 3 and is joined to the insulating substrate 20 via a bonding material 23.

[0015] The semiconductor element 19 is mounted on the insulating substrate 20 via a bonding material 23. The semiconductor element 19 is connected to the insulating substrate 20 via a wire 21, and also connected to the other end 1c of the electrode terminal 1 via the wire 21, thereby forming a circuit. The wire 21 is, for example, an aluminum wire.

[0016] Furthermore, when using a semiconductor device as an inverter or the like, it is necessary to fix the busbar 4 of peripheral equipment (not shown) to one end 1a of the electrode terminal 1 of the semiconductor device with a bolt 5 to perform the electrically driven operation of the semiconductor device. For this reason, copper-based plate-shaped material is used as the electrode terminal 1, but it is preferable to use copper-based plate-shaped material that has been nickel-plated or the like to prevent discoloration of the electrode terminal 1.

[0017] The semiconductor element 19 may be a switching element or a diode. For example, an insulated gate bipolar transistor (IGBT) or a metal-oxide-semiconductor field-effect transistor (MOSFET) may be used, and a diode may be used as a freewheeling element. The switching element and the diode are made of silicon. The number of semiconductor elements 19 is not limited to one, but may be two or more.

[0018] The lid 2 is placed on the inner circumference portion of the upper end of the case 3, covering the upper part of the insulating substrate 20 above the semiconductor element 19. Like the case 3, the lid 2 is made of engineering plastic such as PPS.

[0019] Next, the terminal bending process of the electrode terminal 1 will be described. First, the case of the electrode terminal 1 provided by a semiconductor device relating to the related technology will be described. Figure 14 is a schematic diagram showing the state of the electrode terminal 1 provided by a semiconductor device relating to the related technology before terminal bending. Figure 15 is a schematic diagram showing the state of the terminal pre-bent state of the electrode terminal 1 provided by a semiconductor device relating to the related technology. Figure 16 is a schematic diagram showing the state of the terminal final bend of the electrode terminal 1 provided by a semiconductor device relating to the related technology. Figures 14 to 16 include top views, side views, and cross-sectional views. Figure 17 is a schematic cross-sectional view showing the state of the electrode terminal 1 provided by a semiconductor device relating to the related technology after terminal bending. Figure 18 is a schematic cross-sectional view showing the state in which the contact probe 24 is in contact with the curved electrode terminal 1 in the related technology, and the contact probe 24 is in point contact with the electrode terminal 1. Figure 19 is a schematic cross-sectional view showing the state in which the contact probe 24 is in contact with the non-curved electrode terminal 1 in the related technology, and the contact probe 24 is in surface contact with the electrode terminal 1.

[0020] As shown in Figure 14, after placing the lid 2 on the inner circumference portion of the upper end of the case 3, as shown in Figure 15, attach the terminal bending jig 8 to one end 1a of the electrode terminal 1, and use the terminal bending jig 8 to perform a preliminary bend so that one end 1a of the electrode terminal 1 is at an angle of, for example, 45° to the lid 2.

[0021] Subsequently, as shown in Figure 16, the end 1a of the electrode terminal 1 is pressed from above by the press 9 and bent, thereby fixing the end 1a of the electrode terminal 1 to the upper surface of the lid 2. As shown in Figure 17, the end 1a of the electrode terminal 1 has a hole 6, which serves as a first hole through which a bolt 5 for fixing a busbar 4 of peripheral equipment (not shown) to the end 1a of the electrode terminal 1 is inserted. In addition, the periphery of the lid 2 has a second hole 7 through which the bolt 5 is inserted, along with the hole 6. The hole 7 is, for example, a hole for a nut embedded in the lid 2.

[0022] When bending one end 1a of the electrode terminal 1, stress concentrates in a part of the area around the hole 6. As a result, the end 1a of the electrode terminal 1 is bent in a curved state.

[0023] If one end 1a of the electrode terminal 1 is not curved and is flat, then when the contact probe 24 is brought into contact with one end 1a of the electrode terminal 1, as shown in Figure 19, the contact of the contact probe 24 will be normal surface contact.

[0024] On the other hand, as shown in Figure 17, if one end 1a of the electrode terminal 1 is curved, as shown in Figure 18, when the contact probe 24 is brought into contact with the electrode terminal and current is applied, a point contact point is created at the contact point of the contact probe. This can cause Joule heat to be generated by discharge at the point contact point, potentially damaging the semiconductor device and the busbar 4 (see Figure 17).

[0025] Next, we will describe Embodiment 1, which resolves the above-mentioned problems. Figure 2 is a schematic diagram showing the state of the electrode terminal 1 of the semiconductor device according to Embodiment 1 after bending. Figure 2 includes a top view, a side view, and a cross-sectional view.

[0026] As shown in Figure 2, a pair of beam portions 10 are provided at one end 1a of the electrode terminal 1, in a position that is inward from both ends of the electrode terminal 1 in the width direction and opposite to it via the hole 6, and projecting toward the lid 2. The pair of beam portions 10 are provided along the extending direction of one end 1a of the electrode terminal 1. The pair of beam portions 10 are made of the same material as the electrode terminal 1 and are fixed to one end 1a of the electrode terminal 1 by brazing or the like. When one end 1a of the electrode terminal 1 is bent so that it extends laterally, the pair of beam portions 10 come into contact with the lid 2, thereby suppressing curvature around the hole 6 of the electrode terminal 1 after bending the terminal and improving the flatness around the hole 6 of the electrode terminal 1.

[0027] Figure 3 is a schematic diagram showing the state of the electrode terminal 1 of a semiconductor device according to a modified example of Embodiment 1 after terminal bending. Figure 3 includes a top view, a side view, and a cross-sectional view.

[0028] As shown in Figure 3, one end 1a of the electrode terminal 1 is provided with a pair of bent portions 11 as reinforcing portions that protrude toward the lid 2, located inward from both ends of the electrode terminal 1 in the width direction and facing each other via the hole 6. The pair of bent portions 11 are provided along the extending direction of one end 1a of the electrode terminal 1. The pair of bent portions 11 are formed by a process such as coining. Both of the pair of bent portions 11 may be V-shaped or U-shaped.

[0029] In particular, the beam portion 10 is preferably linear. Discrete structures such as dots or dotted lines result in point contact, while a linear shape improves the contact area and distributes the force. The position of the beam portion 10 is positioned inward from both ends in the width direction of the electrode terminal 1 to increase strength. However, if it is too close to the hole 6, the bolt 5 and the beam portion 10 will interfere when tightening the bolt 5. Therefore, it is preferable that the position be near the center between both ends in the width direction of the electrode terminal 1 and the hole 6.

[0030] As described above, in Embodiment 1, the semiconductor device comprises a semiconductor element 19, an insulating substrate 20 on which the semiconductor element 19 is mounted, a case 3 surrounding the outer periphery of the insulating substrate 20, an electrode terminal 1 having one end portion 1a extending laterally with a hole 6, an intermediate portion 1b located inside the case 3 and including a portion extending vertically, and another end portion 1c electrically connected to the semiconductor element 19, and a cover 2 having a hole 7 and covering the upper part of the insulating substrate 20 above the semiconductor element 19. The one end portion 1a of the electrode terminal 1 is positioned on the cover 2 such that the holes 6 and 7 overlap in a top view. The one end portion 1a of the electrode terminal 1 is provided with a pair of reinforcing portions protruding toward the cover 2 at positions that are inward from both ends in the width direction of the electrode terminal 1 and facing each other via the hole 6.

[0031] Therefore, when one end 1a of the electrode terminal 1 is bent so that it extends laterally, the pair of reinforcing parts come into contact with the cover 2. This suppresses curvature around the hole 6 in the electrode terminal 1 after bending, and improves the flatness around the hole 6 in the electrode terminal 1. As a result, the contact area of ​​the contact probe 24 with respect to the electrode terminal 1 is improved, and damage to the semiconductor device caused by heat generated by point contact of the contact probe 24 with respect to the electrode terminal 1 can be avoided.

[0032] Furthermore, since the reinforcing section includes the beam section 10, the rigidity of the pair of beam sections 10 can be improved by making them separate components rather than being integrated with the electrode terminal 1.

[0033] Furthermore, since the reinforcing portion includes the bent portion 11, the rigidity of the pair of bent portions 11 can be improved by making the pair of reinforcing portions, for example, V-shaped.

[0034] <Embodiment 2> Next, Embodiment 2 will be described. Figure 4 is a schematic diagram showing the state of the electrode terminal 1 of the semiconductor device according to Embodiment 2 after bending. Figure 4 includes a top view and a cross-sectional view. Figure 5 is a schematic side view showing the state of the electrode terminal 1 after bending when a rectangular prism-shaped beam portion 10 is provided on the electrode terminal 1 in Embodiment 2. Figure 6 is a schematic side view showing the state of the electrode terminal 1 after bending when a triangular prism-shaped beam portion 10 is provided on the electrode terminal 1 in Embodiment 2. Figure 7 is a schematic side view showing the state of the electrode terminal 1 after bending when a semi-cylindrical beam portion 10 is provided on the electrode terminal 1 in Embodiment 2. In Embodiment 2, the same reference numerals are used for components that are the same as those described in Embodiment 1, and their descriptions are omitted.

[0035] In Embodiment 2, the shape of the beam portion 10 shown in Figure 4 is specified. As shown in Figure 5, the beam portion 10 may have a rectangular prism shape. In this case, the width w of the beam portion 10 is 1 mm or more, and the height h is 1 mm or more.

[0036] Alternatively, as shown in Figure 6, the beam section 10 may have a triangular prism shape. In this case, the width w of the beam section 10 is 1 mm or more, and the height h is 1 mm or more.

[0037] Alternatively, as shown in Figure 7, the beam portion 10 may have a semi-cylindrical shape. In this case, the diameter d of the beam portion 10 is 1 mm or more.

[0038] As described above, in Embodiment 2, the beam portion 10 has a rectangular prism shape, a triangular prism shape, or a semi-cylindrical shape, so the same effects as in Embodiment 1 can be obtained.

[0039] <Embodiment 3> Next, Embodiment 3 will be described. Figure 8 is a schematic diagram showing the state of the electrode terminal 1 of the semiconductor device according to Embodiment 3 after bending. Figure 8 includes a top view and a cross-sectional view. In Embodiment 3, the same reference numerals are used for components that are the same as those described in Embodiments 1 and 2, and their descriptions are omitted.

[0040] As shown in Figure 8, in Embodiment 3, a fixing structure between one end 1a of the electrode terminal 1 and the lid 2 is added compared to Embodiment 1 or Embodiment 2. A snap-fit ​​portion 13 is provided at the tip of one end 1a of the electrode terminal 1. A third hole, a hole 12, is provided in the portion of the lid 2 that is on the inner circumference side of the hole 7. The snap-fit ​​portion 13 is formed in a hook shape, with its tip facing upward. Therefore, when the snap-fit ​​portion 13 is inserted through the hole 7 of the lid 2, the tip of the snap-fit ​​portion 13 is in contact with the back surface of the lid 2. The electrode terminal 1 and the lid 2 are fixed together by the tip of the snap-fit ​​portion 13 contacting the back surface of the lid 2. This configuration suppresses insufficient bending and lifting of one end 1a of the electrode terminal 1, thereby improving the flatness of one end 1a of the electrode terminal 1 compared to Embodiments 1 and 2.

[0041] As described above, in Embodiment 3, a snap-fit ​​portion 13 is provided at the tip of one end 1a of the electrode terminal 1. A hole 12 is provided in the lid 2. When the snap-fit ​​portion 13 is inserted through the hole 12 of the lid 2, the snap-fit ​​portion 13 is in contact with the back surface of the lid 2.

[0042] Therefore, insufficient bending and lifting of one end 1a of the electrode terminal 1 can be suppressed, resulting in improved flatness of one end 1a of the electrode terminal 1 compared to embodiments 1 and 2. As a result, damage to the semiconductor device caused by heat generated by point contact of the contact probe 24 with the electrode terminal 1 can be further avoided. In addition, since both ends of the electrode terminal 1 in the extending direction are fixed, resonance phenomena are less likely to occur, thus suppressing terminal breakage of the electrode terminal 1.

[0043] <Embodiment 4> Next, Embodiment 4 will be described. Figure 9 is a schematic cross-sectional view showing the process of attaching the upper electrode terminal 14 of the semiconductor device according to Embodiment 4 to the lower electrode terminal 15. In Embodiment 4, the same reference numerals are used for components that are the same as those described in Embodiments 1 to 3, and their descriptions are omitted.

[0044] As shown in Figure 9, in Embodiment 4, the semiconductor device is equipped with an upper electrode terminal 14 and a lower electrode terminal 15 instead of electrode terminal 1.

[0045] The lower electrode terminal 15 has one end (the upper end in Figure 9) which is located inside the case 3 and extends in the vertical direction, and the other end which is electrically connected to a semiconductor element 19 (see Figure 1), although not shown. A springy press-fit portion 17 is provided at one end of the lower electrode terminal 15.

[0046] The upper electrode terminal 14 has one end (the left end in Figure 9) which extends laterally and has a hole 6 and a snap-fit ​​portion 13 at its tip, and the other end (the right end in Figure 9) which has a connecting member 18 that connects to the lower electrode terminal 15. The connecting member 18 of the upper electrode terminal 14 is provided with a recess 18a into which the press-fit portion 17 fits. The lid 2 is also provided with holes 7 and 12.

[0047] As described above, in Embodiment 4, the semiconductor device comprises a semiconductor element 19, an insulating substrate 20 on which the semiconductor element 19 is mounted, a case 3 surrounding the outer periphery of the insulating substrate 20, a lower electrode terminal 15 having one end portion that is provided inside the case 3 and extends in the vertical direction, and the other end portion that is electrically connected to the semiconductor element 19, an upper electrode terminal 14 having one end portion that extends laterally and has a hole 6 provided, with a snap-fit ​​portion 13 at its tip, and the other end portion that has a connecting member 18 that is connected to the lower electrode terminal 15, and a lid 2 having holes 7 and 12 and covering the upper part of the insulating substrate 20 above the semiconductor element 19. One end of the upper electrode terminal 14 is positioned on the lid 2 such that holes 6 and 7 overlap when viewed from above. With the snap-fit ​​portion 13 inserted through hole 12 in the lid 2, the snap-fit ​​portion 13 is in contact with the back surface of the lid 2.

[0048] Furthermore, a press-fit portion 17 is provided at one end of the lower electrode terminal 15. The connecting member 18 of the upper electrode terminal 14 is provided with a recess 18a into which the press-fit portion 17 fits.

[0049] Therefore, by manufacturing the upper electrode terminal 14 and the lower electrode terminal 15 separately, the terminal bending process is eliminated, and the area around the hole 6 in the upper electrode terminal 14 does not curve. In addition, since the tip of the snap-fit ​​portion 13 contacts the back surface of the lid 2, the upper electrode terminal 14 and the lid 2 are fixed together, so lifting of the upper electrode terminal 14 can be suppressed. As a result, the flatness of the upper electrode terminal 14 is improved. Thus, damage to the semiconductor device caused by heat generated by point contact of the contact probe 24 with the upper electrode terminal 14 can be further avoided. Furthermore, since both ends in the extending direction of the upper electrode terminal 14 and the lower electrode terminal 15 are fixed when they are connected, resonance phenomena are less likely to occur, thus suppressing terminal breakage of the upper electrode terminal 14 and the lower electrode terminal 15.

[0050] <Embodiment 5> Next, Embodiment 5 will be described. Figure 10 is a schematic diagram showing the process of attaching the upper electrode terminal of the semiconductor device according to Embodiment 5 to the lower electrode terminal. Figure 10 includes a top view and a cross-sectional view. In Embodiment 5, the same reference numerals are used for components that are the same as those described in Embodiments 1 to 4, and their descriptions are omitted.

[0051] As shown in Figure 10, Embodiment 5 differs from Embodiment 4 in the structure of the connection portion provided on the upper electrode terminal 14 and the number of press-fit portions 17 provided on the lower electrode terminal 15.

[0052] Two press-fit portions 17 are provided at one end of the lower electrode terminal 15. Two through-holes 16 are provided at one end of the upper electrode terminal 14 as connection points, into which the two press-fit portions 17 each fit. The portion of the upper electrode terminal 14 excluding the snap-fit ​​portion 13 is formed in a straight line. Therefore, the two through-holes 16 are provided on the same plane as the hole 6. Note that the number of press-fit portions 17 and through-holes 16 is not limited to two, but at least two of each are required. In this case, the number of press-fit portions 17 and through-holes 16 is the same.

[0053] As described above, in Embodiment 5, at least two press-fit portions 17 are provided at one end of the lower electrode terminal 15. The connection portion of the upper electrode terminal 14 includes at least two through-holes 16 into which at least two press-fit portions 17 each fit. At least two through-holes 16 are provided on the same plane as the hole 6.

[0054] Therefore, by manufacturing the upper electrode terminal 14 and the lower electrode terminal 15 separately, the terminal bending process is eliminated, and the area around the hole 6 in the upper electrode terminal 14 does not curve. Also, since the tip of the snap-fit ​​portion 13 contacts the back surface of the lid 2, the upper electrode terminal 14 and the lid 2 are fixed together, so the floating of the upper electrode terminal 14 can be suppressed. As a result, the flatness of the upper electrode terminal 14 is improved. Thus, damage to the semiconductor device caused by heat generated by the point contact of the contact probe 24 with the upper electrode terminal 14 can be further avoided. In addition, since both ends in the extending direction of the upper electrode terminal 14 and the lower electrode terminal 15 are fixed when they are connected, resonance phenomena are less likely to occur, so terminal breakage of the upper electrode terminal 14 and the lower electrode terminal 15 is suppressed. Note that the more connection points there are between the upper electrode terminal 14 and the lower electrode terminal 15, the greater the effect of suppressing terminal breakage of the upper electrode terminal 14 and the lower electrode terminal 15.

[0055] <Embodiment 6> Next, Embodiment 6 will be described. Figure 11 is a schematic cross-sectional view showing the process of attaching the upper electrode terminal 14 of the semiconductor device according to Embodiment 6 to the lower electrode terminal 15. In Embodiment 6, the same reference numerals are used for components that are the same as those described in Embodiments 1 to 5, and their descriptions are omitted.

[0056] As shown in Figure 11, Embodiment 6 differs from Embodiment 4 in the connection structure between the upper electrode terminal 14 and the lower electrode terminal 15.

[0057] One end of the lower electrode terminal 15 is rod-shaped. In other words, there is no press-fit portion 17 at one end of the lower electrode terminal 15. The recess 18a of the connecting member 18 provided at the other end of the upper electrode terminal 14 is provided with a spring-shaped receiving portion 18b that fits onto one end of the rod-shaped lower electrode terminal 15.

[0058] As described above, in Embodiment 6, by manufacturing the upper electrode terminal 14 and the lower electrode terminal 15 separately, the terminal bending process is eliminated, and the area around the hole 6 in the upper electrode terminal 14 does not curve. In addition, since the tip of the snap-fit ​​portion 13 contacts the back surface of the lid 2, the upper electrode terminal 14 and the lid 2 are fixed together, so that the upper electrode terminal 14 does not float. As a result, the flatness of the upper electrode terminal 14 is improved. Therefore, damage to the semiconductor device caused by heat generated by the point contact of the contact probe 24 with the upper electrode terminal 14 can be further avoided. Furthermore, since both ends in the extending direction of the upper electrode terminal 14 and the lower electrode terminal 15 are fixed when they are connected, resonance phenomena are less likely to occur, so terminal breakage of the upper electrode terminal 14 and the lower electrode terminal 15 is suppressed.

[0059] <Embodiment 7> Next, Embodiment 7 will be described. Figure 12 is a schematic diagram showing the process of attaching the upper electrode terminal 14 of the semiconductor device according to Embodiment 7 to the lower electrode terminal 15. Figure 12 includes a top view, a side view, and a cross-sectional view. In Embodiment 7, the same reference numerals are used for components that are the same as those described in Embodiments 1 to 6, and their descriptions are omitted.

[0060] As shown in Figure 12, in Embodiment 7, the connection structure between the upper electrode terminal 14 and the lower electrode terminal 15 differs from that of Embodiment 4. The lower electrode terminal 15 has one end that is located inside the case 3 and extends in the vertical direction, with a connecting member 18 at its tip as a connecting part, and the other end that is electrically connected to a semiconductor element 19 (see Figure 1), although not shown.

[0061] The upper electrode terminal 14 has one end with a hole 6 and the other end which is connected to the connecting member 18 of the lower electrode terminal 15, and extends laterally.

[0062] The surface of the lid 2 is provided with grooves 25 through which the upper electrode terminal 14 is inserted. More specifically, the surface of the lid 2 is provided with a pair of grooves 25 through which the upper electrode terminal 14 is inserted while holding both ends of the upper electrode terminal 14 in the width direction. The pair of grooves 25 are provided at positions on the surface of the lid 2 corresponding to both ends of the upper electrode terminal 14 in the width direction. The upper electrode terminal 14 is inserted into the pair of grooves 25 such that holes 6 and 7 overlap when viewed from above. The upper electrode terminal 14 is fixed to the lid 2 by being inserted into the pair of grooves 25. This configuration suppresses the floating of the upper electrode terminal 14, thereby improving the flatness of the upper electrode terminal 14.

[0063] Furthermore, the other end of the upper electrode terminal 14 is rod-shaped. The connecting member 18 of the lower electrode terminal 15 is provided with a recess 18a into which the other end of the rod-shaped upper electrode terminal 14 is inserted. The recess 18a of the connecting member 18 is provided with a spring-shaped receiving portion 18b that fits onto the other end of the rod-shaped upper electrode terminal 14.

[0064] As described above, in Embodiment 7, by manufacturing the upper electrode terminal 14 and the lower electrode terminal 15 separately, the terminal bending process is eliminated, and the area around the hole 6 in the upper electrode terminal 14 does not curve. Furthermore, since the upper electrode terminal 14 is inserted into the pair of grooves 25, the upper electrode terminal 14 and the cover 2 are fixed together, so the floating of the upper electrode terminal 14 can be suppressed. As a result, the flatness of the upper electrode terminal 14 is improved. Therefore, damage to the semiconductor device caused by heat generated by point contact of the contact probe 24 with the upper electrode terminal 14 can be further avoided. In addition, since both ends in the extending direction of the upper electrode terminal 14 and the lower electrode terminal 15 are fixed when they are connected, resonance phenomena are less likely to occur, so terminal breakage of the upper electrode terminal 14 and the lower electrode terminal 15 is suppressed.

[0065] <Embodiment 8> Next, Embodiment 8 will be described. Figure 13 is a schematic diagram showing the process of attaching the upper electrode terminal 14 of the semiconductor device according to Embodiment 8 to the lower electrode terminal 15. Figure 13 includes a top view, a side view, and a cross-sectional view. In Embodiment 8, the same reference numerals are used for components that are the same as those described in Embodiments 1 to 7, and their descriptions are omitted.

[0066] As shown in Figure 13, in Embodiment 8, the connection structure between the upper electrode terminal 14 and the lower electrode terminal 15 differs from that in Embodiment 7. Two press-fit portions 17 are provided at the other end of the upper electrode terminal 14. Two through-holes 16 are provided at one end of the lower electrode terminal 15, serving as connection portions into which the two press-fit portions 17 each fit. It is preferable that the through-holes 16 be tin-plated or solder-plated to improve electrical conductivity. Note that the number of press-fit portions 17 and through-holes 16 is not limited to two, but at least two of each are required. In this case, the number of press-fit portions 17 and through-holes 16 is the same.

[0067] As described above, in Embodiment 8, by manufacturing the upper electrode terminal 14 and the lower electrode terminal 15 separately, the terminal bending process is eliminated, and the area around the hole 6 in the upper electrode terminal 14 does not curve. In addition, since the upper electrode terminal 14 is inserted into the pair of grooves 25, the upper electrode terminal 14 and the cover 2 are fixed together, so the floating of the upper electrode terminal 14 can be suppressed. As a result, the flatness of the upper electrode terminal 14 is improved. Therefore, damage to the semiconductor device caused by heat generated by point contact of the contact probe 24 with the upper electrode terminal 14 can be further avoided. Furthermore, since both ends in the extending direction of the upper electrode terminal 14 and the lower electrode terminal 15 are fixed when they are connected, resonance phenomena are less likely to occur, so terminal breakage of the upper electrode terminal 14 and the lower electrode terminal 15 is suppressed. Note that the more connection points there are between the upper electrode terminal 14 and the lower electrode terminal 15, the greater the effect of suppressing terminal breakage of the upper electrode terminal 14 and the lower electrode terminal 15.

[0068] <Modified versions of Embodiments 1-8> Although embodiments 1 to 8 described an insert type in which the terminals are inserted inside the case 3, the invention is also applicable to an outsert type in which the terminals are embedded in the molded case 3.

[0069] Furthermore, while embodiments 1 to 8 show switching elements and diode elements formed from silicon, they may also be formed from wide-bandgap semiconductors with a larger bandgap than silicon. Examples of wide-bandgap semiconductors include silicon carbide, gallium nitride-based materials, gallium oxide-based materials, or diamond. Switching elements or diode elements formed from such wide-bandgap semiconductors have high voltage resistance and allowable current density. Therefore, it is possible to miniaturize the switching elements or diode elements, and by using these miniaturized switching elements or diode elements, it is possible to miniaturize semiconductor devices equipped with these elements.

[0070] Furthermore, switching elements or diode elements formed from wide-bandgap semiconductors have high heat resistance, which allows for miniaturization of the heat sink's heat dissipation fins and air cooling of the water-cooled section, enabling further miniaturization of semiconductor devices. In particular, if the wide-bandgap semiconductor is silicon carbide, it has higher heat resistance than silicon, and since good contact between the electrodes and peripheral equipment is important for conducting current at high current densities, embodiments 1 to 8 are useful.

[0071] Furthermore, while it is desirable that both the switching element and the diode element be formed from a wide-bandgap semiconductor, either one of the elements may be formed from a wide-bandgap semiconductor.

[0072] Furthermore, it is possible to freely combine each embodiment, or to modify or omit each embodiment as appropriate.

[0073] The various aspects of this disclosure are summarized below as an appendix.

[0074] (Note 1) Semiconductor elements and An insulating substrate on which the aforementioned semiconductor element is mounted, A case surrounding the outer periphery of the insulating substrate, An electrode terminal having one end with a first hole and extending laterally, an intermediate portion including a portion that is provided inside the case and extends vertically, and the other end that is electrically connected to the semiconductor element, A second hole is provided, and a cover is provided above the semiconductor element and covering the above the insulating substrate, The one end of the electrode terminal is positioned on the lid such that the first hole and the second hole overlap when viewed from above. A semiconductor device is provided with a pair of reinforcing portions that protrude toward the lid side at one end of the electrode terminal, at a position that is inward from both ends of the electrode terminal in the width direction and opposite to it through the first hole.

[0075] (Note 2) The semiconductor device described in Appendix 1, wherein the reinforcing portion includes a beam portion.

[0076] (Note 3) The semiconductor device described in Appendix 1, wherein the reinforcing portion includes a bent portion.

[0077] (Note 4) The semiconductor device described in Appendix 2, wherein the beam portion has a rectangular prism shape, a triangular prism shape, or a semi-cylindrical shape.

[0078] (Note 5) A snap-fit ​​portion is provided at the tip of one end of the electrode terminal. The lid is provided with a third hole. The semiconductor device according to any one of the appendices 1 to 4, wherein the snap-fit ​​portion is inserted through the third hole of the lid and the snap-fit ​​portion is in contact with the back surface of the lid.

[0079] (Note 6) Semiconductor elements and An insulating substrate on which the aforementioned semiconductor element is mounted, A case surrounding the outer periphery of the insulating substrate, A lower electrode terminal having one end portion that is provided inside the case and extends in the vertical direction, and the other end portion that is electrically connected to the semiconductor element, An upper electrode terminal having a first hole provided and extending laterally, with a snap-fit ​​portion at one end, and a connecting portion provided at the other end for connecting to the lower electrode terminal, The semiconductor element is provided with a second hole and a third hole, and the device comprises a cover that covers the upper part of the insulating substrate above the semiconductor element, The one end of the upper electrode terminal is positioned on the lid such that the first hole and the second hole overlap when viewed from above. A semiconductor device in which the snap-fit ​​portion is inserted through the third hole of the lid and the snap-fit ​​portion is in contact with the back surface of the lid.

[0080] (Note 7) A press-fit portion is provided at one end of the lower electrode terminal. The semiconductor device according to Appendix 6, wherein the connection portion of the upper electrode terminal is provided with a recess into which the press-fit portion fits.

[0081] (Note 8) At least two press-fit portions are provided at one end of the lower electrode terminal. The connection portion of the upper electrode terminal includes at least two through-holes into which at least two of the press-fit portions are fitted, The semiconductor device according to Appendix 6, wherein at least two of the through-holes are located on the same plane as the first hole.

[0082] (Note 9) The one end of the lower electrode terminal is rod-shaped, The connection portion of the upper electrode terminal is provided with a recess into which one end of the rod-shaped lower electrode terminal is inserted. The semiconductor device according to Appendix 6, wherein the recess of the connecting portion is provided with a spring-shaped receiving portion that fits onto one end of the rod-shaped lower electrode terminal.

[0083] (Note 10) Semiconductor elements and An insulating substrate on which the aforementioned semiconductor element is mounted, A case surrounding the outer periphery of the insulating substrate, A lower electrode terminal having one end that is provided inside the case and extends in the vertical direction, with a connecting portion at its tip, and the other end that is electrically connected to the semiconductor element, An upper electrode terminal having one end with a first hole and the other end connected to the connection portion of the lower electrode terminal, extending laterally, A second hole is provided, and a cover is provided above the semiconductor element and covering the above the insulating substrate, The surface of the lid is provided with a groove through which the upper electrode terminal is inserted. A semiconductor device in which the upper electrode terminal is inserted into the groove such that the first hole and the second hole overlap when viewed from above.

[0084] (Note 11) The other end of the upper electrode terminal is rod-shaped, The connecting portion is provided with a recess into which the other end of the rod-shaped upper electrode terminal is inserted. The semiconductor device according to Appendix 10, wherein the recess of the connecting portion is provided with a spring-shaped receiving portion that fits onto the other end of the rod-shaped upper electrode terminal.

[0085] (Note 12) The other end of the upper electrode terminal is provided with at least two press-fit portions. The semiconductor device according to Appendix 10, wherein the connection portion of the lower electrode terminal is provided with at least two through-holes into which at least two of the press-fit portions are fitted. [Explanation of symbols]

[0086] 1 Electrode terminal, 1a one end, 1b middle part, 1c other end, 2 Lid, 3 Case, 6 Hole, 7 Hole, 10 Beam part, 11 Bent part, 12 Hole, 13 Snap-fit ​​part, 14 Upper electrode terminal, 15 Lower electrode terminal, 16 Through hole, 17 Press-fit part, 18 Connecting member, 18a Recess, 18b Receiving part, 19 Semiconductor element, 20 Insulating substrate, 25 Groove.

Claims

1. Semiconductor elements and An insulating substrate on which the aforementioned semiconductor element is mounted, A case surrounding the outer periphery of the insulating substrate, An electrode terminal having one end with a first hole and extending laterally, an intermediate portion including a portion that is provided inside the case and extends vertically, and the other end that is electrically connected to the semiconductor element, A second hole is provided, and a cover is provided above the semiconductor element and covering the above the insulating substrate, The one end of the electrode terminal is positioned on the lid such that the first hole and the second hole overlap when viewed from above. A semiconductor device is provided with a pair of reinforcing portions that protrude toward the lid side at one end of the electrode terminal, at a position that is inward from both ends in the width direction of the electrode terminal and opposite to it through the first hole.

2. The semiconductor device according to claim 1, wherein the reinforcing portion includes a beam portion.

3. The semiconductor device according to claim 1, wherein the reinforcing portion includes a bent portion.

4. The semiconductor device according to claim 2, wherein the beam portion has a rectangular prism shape, a triangular prism shape, or a semi-cylindrical shape.

5. A snap-fit ​​portion is provided at the tip of one end of the electrode terminal. The lid is provided with a third hole. The semiconductor device according to any one of claims 1 to 4, wherein the snap-fit ​​portion is inserted through the third hole of the lid and the snap-fit ​​portion is in contact with the back surface of the lid.

6. Semiconductor elements and An insulating substrate on which the aforementioned semiconductor element is mounted, A case surrounding the outer periphery of the insulating substrate, A lower electrode terminal having one end portion that is provided inside the case and extends in the vertical direction, and the other end portion that is electrically connected to the semiconductor element, An upper electrode terminal having a first hole provided and extending laterally, with a snap-fit ​​portion at one end, and a connecting portion provided at the other end for connecting to the lower electrode terminal, The semiconductor element is provided with a second hole and a third hole, and the device comprises a cover that covers the upper part of the insulating substrate above the semiconductor element, The one end of the upper electrode terminal is positioned on the lid such that the first hole and the second hole overlap when viewed from above. A semiconductor device in which the snap-fit ​​portion is inserted through the third hole of the lid and the snap-fit ​​portion is in contact with the back surface of the lid.

7. A press-fit portion is provided at one end of the lower electrode terminal. The semiconductor device according to claim 6, wherein the connection portion of the upper electrode terminal is provided with a recess into which the press-fit portion fits.

8. At least two press-fit portions are provided at one end of the lower electrode terminal. The connection portion of the upper electrode terminal includes at least two through-holes into which at least two of the press-fit portions are fitted. The semiconductor device according to claim 6, wherein at least two of the through-holes are located on the same plane as the first hole.

9. The one end of the lower electrode terminal is rod-shaped, The connection portion of the upper electrode terminal is provided with a recess into which one end of the rod-shaped lower electrode terminal is inserted. The semiconductor device according to claim 6, wherein the recess of the connecting portion is provided with a spring-shaped receiving portion that fits onto one end of the rod-shaped lower electrode terminal.

10. Semiconductor elements and An insulating substrate on which the aforementioned semiconductor element is mounted, A case surrounding the outer periphery of the insulating substrate, A lower electrode terminal having one end that is provided inside the case and extends in the vertical direction, with a connecting portion at its tip, and the other end that is electrically connected to the semiconductor element, An upper electrode terminal having one end with a first hole and the other end connected to the connection portion of the lower electrode terminal, extending laterally, A second hole is provided, and a cover is provided above the semiconductor element and covering the above the insulating substrate, The surface of the lid is provided with a groove through which the upper electrode terminal is inserted. A semiconductor device in which the upper electrode terminal is inserted into the groove such that the first hole and the second hole overlap when viewed from above.

11. The other end of the upper electrode terminal is rod-shaped, The connecting portion is provided with a recess into which the other end of the rod-shaped upper electrode terminal is inserted. The semiconductor device according to claim 10, wherein the recess of the connecting portion is provided with a spring-shaped receiving portion that fits onto the other end of the rod-shaped upper electrode terminal.

12. At least two press-fit portions are provided at the other end of the upper electrode terminal. The semiconductor device according to claim 10, wherein the connection portion of the lower electrode terminal is provided with at least two through-holes into which at least two of the press-fit portions are fitted.

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