Method and apparatus for transferring this element

Abstract

The present invention provides an element transfer method that enables the removal of elements even when irregularities exist on the element's surface. [Solution] This element transfer method includes a step of irradiating a support substrate 10, on which the uneven surface 1c of a semiconductor chip 1 having an uneven shape is supported by an adhesive layer 2, with laser light L from the surface 10b opposite to the surface 10a that supports the semiconductor chip 1 via the adhesive layer 2. The step of irradiating with laser light L includes adjusting the irradiation position of the laser light L so that the laser light L irradiates the adhesive layer 2 facing the recess 1b of the semiconductor chip 1.

Description

[Technical Field]

[0001] The present invention relates to an element transfer apparatus and an element transfer method that irradiate a laser beam from a surface opposite to the surface where a support substrate supports an element via an adhesive layer. [Background Art]

[0002] Conventionally, there has been known an element transfer method that irradiates a laser beam from a surface opposite to the surface where a support substrate supports an element via an adhesive layer (see, for example, Patent Document 1).

[0003] The above-mentioned Patent Document 1 discloses an element transfer method for transferring a component (element) attached to a support substrate via a dynamic release layer (adhesive layer) to a target substrate. In this element transfer method, a laser beam is irradiated from the surface opposite to the surface where the support substrate supports the element via the dynamic release layer. The laser beam forms a blister (a portion bulging downward in a convex shape) in the dynamic release layer. As a result, the component is peeled from the dynamic release layer and transferred to the target substrate. [Prior Art Documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Unexamined Patent Publication No. 2020-188261 [Summary of the Invention] [Problem to be Solved by the Invention]

[0005] However, in the conventional element transfer method as described in the above-mentioned Patent Document 1, when the surface of an article has unevenness, the convex portion on the surface of the article may be embedded in the dynamic release layer in some cases. In this case, the adhesive force (the force of adhering to the dynamic release layer) of the convex portion embedded in the dynamic release layer increases, which may make it difficult for the blister to bulge. In this case, there is a problem that the blister does not bulge sufficiently, and the article (element) does not peel off.

[0006] This invention was made to solve the above-mentioned problems, and one of its objectives is to provide an element transfer method and an element transfer apparatus that can peel off an element even if there are irregularities on the surface of the element. [Means for solving the problem]

[0007] To achieve the above objective, this first-faced element transfer method includes a step of irradiating a support substrate, on which the uneven surface of an element having an uneven shape is supported by an adhesive layer, with laser light from the side of the support substrate opposite to the side that supports the element via the adhesive layer, wherein the step of irradiating with laser light includes a step of adjusting the irradiation position of the laser light so that the laser light irradiates the adhesive layer facing the recess of the element.

[0008] As described above, the first method of transferring the element involves adjusting the irradiation position of the laser beam so that the laser beam irradiates the adhesive layer facing the recess of the element. As a result, the portion of the adhesive layer facing the recess of the element is not embedded in the element, and therefore the adhesion force between the element and the portion of the adhesive layer facing the recess of the element is low. By irradiating the adhesive layer facing the recess of the element, the blister expands sufficiently, allowing the element to be peeled off. Consequently, the element can be peeled off even if there are irregularities on the surface of the element.

[0009] In the element transfer method according to the first aspect described above, preferably, the element is provided with a plurality of electrode patterns, and the step of irradiating with laser light includes adjusting the irradiation position of the laser light so as to irradiate the adhesive layer facing the plurality of electrode patterns which form recesses. With this configuration, the adhesion force between the element and the portion of the adhesive layer facing the space between the plurality of electrode patterns (recesses) is low, so the blister can be easily and sufficiently inflated. As a result, even when the element is provided with a plurality of electrode patterns, the element can be easily peeled off.

[0010] In the element transfer method according to the first aspect described above, preferably, the method further includes a step of identifying the recesses of the element in advance before the step of irradiating with laser light, and the step of irradiating with laser light includes a step of adjusting the irradiation position of the laser light so as to irradiate the adhesive layer facing the identified recesses of the element. With this configuration, since the recesses of the element are identified in advance, the irradiation position of the laser light can be easily adjusted so as to irradiate the adhesive layer facing the recesses.

[0011] In this case, preferably, the step of pre-identifying the recesses of the element includes the step of pre-identifying the recesses of the element while it is held in the adhesive layer. If the recesses of the element are pre-identified before they are held in the adhesive layer, the element is attached to the adhesive layer after identification, which may cause errors in the position of the recesses due to errors in the attachment position. Therefore, by pre-identifying the recesses of the element while it is held in the adhesive layer, errors in the position of the recesses of the element caused by attachment to the adhesive layer are eliminated, allowing for accurate adjustment of the laser beam irradiation position.

[0012] In the element transfer method according to the first aspect described above, preferably, the method further includes a step of acquiring an image of the element and a step of receiving input of a region corresponding to a recess of the element in the acquired image, before the step of irradiating with laser light, and the step of irradiating with laser light includes a step of adjusting the irradiation position of the laser light so as to irradiate the adhesive layer opposite to the region corresponding to the input recess of the element. With this configuration, the user can identify the recess of the element while checking the image of the element. Therefore, even if it is a recess, areas where the adhesion force with the adhesive layer is likely to be high can be excluded from the irradiation of the laser light, and even if it is a convex part, areas where the adhesion force with the adhesive layer is likely to be low can be targeted for irradiation of the laser light, so that areas where the blister is likely to bulge can be appropriately selected as the irradiation position of the laser light.

[0013] In this case, preferably, the step of acquiring an image of the element includes the step of acquiring an image of the element while it is held in the adhesive layer. If the image of the element is acquired before it is held in the adhesive layer, the element is attached to the adhesive layer after the recesses of the semiconductor chip are identified, so an error may occur between the position of the recesses of the element in the acquired image and the position of the recesses of the element after it has been attached to the adhesive layer, due to errors in the attachment position. Therefore, by acquiring an image of the element while it is held in the adhesive layer, errors in the position of the recesses of the element caused by attachment to the adhesive layer do not occur, and the irradiation position of the laser beam can be adjusted with high precision.

[0014] The element transfer apparatus according to this second phase comprises a support substrate holding unit that holds a support substrate on which the uneven surface of an element having an uneven shape is supported by an adhesive layer, and a laser beam irradiation unit that irradiates laser light toward the support substrate from the side opposite to the side on which the support substrate supports the element via the adhesive layer, and the irradiation position of the laser beam irradiation unit is adjusted so that the laser light is irradiated onto the adhesive layer facing the recess of the element.

[0015] In this second phase of the element transfer apparatus, as described above, the irradiation position of the laser beam irradiation section is adjusted so that the laser beam irradiates the adhesive layer facing the recess of the element. As a result, the portion of the adhesive layer facing the recess of the element is not embedded in the element, and therefore the adhesion force between the element and the portion of the adhesive layer facing the recess of the element is low. As a result, by irradiating the adhesive layer facing the recess of the element, the blister expands sufficiently, allowing the element to be peeled off. Consequently, an element transfer apparatus is provided that can peel off elements even when there are irregularities on the surface of the element. [Effects of the Invention]

[0016] As described above, the element transfer method and element transfer apparatus of the present invention can peel off elements even when irregularities exist on the surface of the elements. [Brief explanation of the drawing]

[0017] [Figure 1]It is a schematic diagram showing the overall configuration of a semiconductor chip transfer apparatus according to the first embodiment. [Figure 2] It is a schematic diagram showing a configuration in which a semiconductor chip is supported by a supporting substrate. [Figure 3] It is a cross-sectional view of the semiconductor chip taken along line 200-200 in FIG. 4. [Figure 4] It is a top view of the semiconductor chip. [Figure 5] It is a diagram showing laser light that irradiates an adhesive layer facing a recess of a semiconductor chip. [Figure 6] It is a diagram showing blisters generated in an adhesive layer facing a recess of a semiconductor chip, and the semiconductor chip transferred by the blisters. [Figure 7] It is a flowchart for explaining the processing of a semiconductor chip transfer method according to the first embodiment. [Figure 8] It is a diagram for explaining the step of identifying a recess of a semiconductor chip with a laser microscope. [Figure 9] It is a schematic diagram showing the overall configuration of a semiconductor chip transfer apparatus according to the second embodiment. [Figure 10] It is a flowchart for explaining the processing of a semiconductor chip transfer method according to the second embodiment. [Figure 11] It is a diagram for explaining the step of acquiring an image of a semiconductor chip by an imaging unit. [Figure 12] It is a diagram for explaining the step of receiving input of a region corresponding to a recess of a semiconductor chip. DETAILED DESCRIPTION OF THE INVENTION

[0018] Hereinafter, embodiments embodying the present invention will be described with reference to the drawings.

[0019] [First Embodiment] The configuration of a semiconductor chip transfer apparatus 100 according to the first embodiment will be described. Note that the semiconductor chip transfer apparatus 100 is an example of the "element transfer apparatus" recited in the claims.

[0020] (Semiconductor chip transfer equipment) As shown in Figure 1, the semiconductor chip transfer apparatus 100 is configured to transfer a semiconductor chip 1, supported on a support substrate 10, to a substrate 20 to be transferred using a laser lift-off method.

[0021] The semiconductor chip transfer apparatus 100 comprises a support substrate holding section 30, a substrate to be transferred holding section 40, a moving mechanism 50, a control section 60, and a laser beam irradiation section 70. In the drawings, the left-right direction (one direction in the horizontal plane) of the semiconductor chip transfer apparatus 100 is defined as the X direction. One side of the X direction is defined as the X1 direction, and the other side as the X2 direction. The up-down direction (vertical direction) of the semiconductor chip transfer apparatus 100 is defined as the Z direction. The upward direction is defined as the Z1 direction, and the downward direction is defined as the Z2 direction. The direction perpendicular to the X and Z directions (the other direction in the horizontal plane) of the semiconductor chip transfer apparatus 100 is defined as the Y direction. One side of the Y direction is defined as the Y1 direction, and the other side as the Y2 direction.

[0022] As shown in Figure 2, the semiconductor chip 1 is a thin, rectangular element with sides of approximately several hundred micrometers to several tens of millimeters, such as a memory chip. However, the semiconductor chip 1 is not limited to thin elements like memory chips; various semiconductor elements may be used. Furthermore, the semiconductor chip 1 is an example of the "element" in the claims.

[0023] As shown in Figure 3, the semiconductor chip 1 is provided with multiple electrode patterns 1a. Therefore, the Z1 side of the semiconductor chip 1 is an uneven surface 1c. That is, the electrode patterns 1a are convex portions, and the portions of the semiconductor chip 1 where electrode patterns 1a are not provided are concave portions 1b. Also, as shown in Figure 4, the semiconductor chip 1 has a rectangular shape when viewed from the Z direction. The multiple electrode patterns 1a include, for example, a frame-shaped electrode pattern 111 provided along the outer circumference of the semiconductor chip 1, and electrode patterns 112 connecting the sides of the frame-shaped electrode pattern 111. In the electrode pattern 1a shown in Figure 4, as shown in Figure 3, the spaces between electrode patterns 111 and 112, and between adjacent electrode patterns 112, are concave portions 1b. Note that the electrode pattern 1a shown in Figure 4 is just one example and is not limited to the shape shown in Figure 4. Also, the shape of the semiconductor chip 1 is not limited to a rectangular shape. Furthermore, although electrode pattern 111 and electrode pattern 112 are shown as separate components in Figure 4, electrode pattern 111 and electrode pattern 112 may be formed as a single unit.

[0024] As shown in Figure 5, the support substrate 10 is formed from a material that transmits laser light L, such as an SiO2 (silicon dioxide) substrate or a sapphire substrate. The support substrate 10 supports the semiconductor chip 1 via an adhesive layer 2. The support substrate 10 also supports multiple semiconductor chips 1 via the adhesive layer 2. The adhesive layer 2 is also called a transfer material.

[0025] The adhesive layer 2 is positioned on the Z2-side surface 10a of the support substrate 10. Multiple semiconductor chips 1 are held on the Z2-side surface 2a of the adhesive layer 2. The adhesive layer 2 also supports the uneven surface 1c (Z1-side surface) where the electrode patterns 1a of the semiconductor chips 1, which have an uneven shape, are formed. Therefore, in the example shown in Figure 5, the protrusions (electrode patterns 1a) of the semiconductor chips 1 are embedded in the adhesive layer 2. Consequently, the adhesion force between the portion of the semiconductor chip 1 corresponding to the protrusions (electrode patterns 1a) and the adhesive layer 2 is higher than the adhesion force between the portion of the semiconductor chip 1 corresponding to the recesses 1b (the portion between the multiple electrode patterns 1a) and the adhesive layer 2. Furthermore, the portion of the semiconductor chip 1 corresponding to the recesses 1b is separated from the adhesive layer 2. Note that the state in which the semiconductor chips 1 are held by the adhesive layer 2 shown in Figure 5 is just one example, and the portion of the semiconductor chip 1 corresponding to the recesses 1b may be in contact with the adhesive layer 2. Furthermore, although Figure 5 shows that the amount embedded in the adhesive layer 2 of the multiple protrusions (electrode pattern 1a) is the same, the amount embedded in the multiple protrusions may be different.

[0026] As shown in Figure 2, multiple semiconductor chips 1 are arranged in a matrix at predetermined intervals on a support substrate 10 via an adhesive layer 2. The support substrate 10 has a circular shape. The adhesive layer 2 is made of a material that decomposes and generates gas components when irradiated with laser light L from a laser light irradiation unit 70. As a result of generating gas components, the adhesive layer 2 deforms into a convex shape that protrudes toward the Z2 side (see Figure 6). The deformed convex portion of the adhesive layer 2 is called a blister B. For example, polyimide or silicon can be used as the adhesive layer 2.

[0027] As shown in Figure 5, the support substrate holding portion 30 holds a support substrate 10 on which the uneven surface 1c of a semiconductor chip 1 having an uneven shape is supported by the adhesive layer 2. The support substrate holding portion 30 holds the support substrate 10 supporting the semiconductor chip 1 with the surface 10a supporting the semiconductor chip 1 facing downwards. The support substrate holding portion 30 has an opening 31. Laser light L emitted from the laser light irradiation portion 70 is irradiated onto the support substrate 10 held by the support substrate holding portion 30 through the opening 31. The support substrate holding portion 30 is configured to be able to move relative to the transfer substrate holding portion 40 in at least the X and Y directions by means of a moving mechanism 50 (see Figure 1).

[0028] As shown in Figure 5, the transfer substrate 20 is a substrate for manufacturing semiconductor products by transferring, for example, a large number of semiconductor chips 1 from a support substrate 10 onto the transfer substrate 20. The transfer substrate 20 has an adhesive layer 21 formed thereon for bonding the transferred semiconductor chips 1. The adhesive layer 21 is also called a catch layer. The transfer substrate 20 may also have wiring formed thereon that can be electrically connected to the transferred semiconductor chips 1. The transfer substrate 20 has, for example, a rectangular shape.

[0029] The substrate to be transferred holding portion 40 holds the substrate to be transferred 20, onto which the semiconductor chip 1 supported on the support substrate 10 is transferred, from below (Z2 side). The substrate to be transferred holding portion 40 is configured to be movable relative to the support substrate holding portion 30 in at least the X and Y directions by a moving mechanism 50 (see Figure 1). The moving mechanism 50 may be provided separately for the support substrate holding portion 30 and the substrate to be transferred holding portion 40. By moving either or both of the support substrate holding portion 30 and the substrate to be transferred holding portion 40 by the moving mechanism 50, it is possible to adjust the relative position of the semiconductor chip 1 placed in the support substrate 10 with respect to the substrate to be transferred 20.

[0030] The laser beam irradiation unit 70 irradiates the support substrate 10 with laser light L from the surface 10b opposite to the surface 10a that supports the semiconductor chip 1 via the adhesive layer 2. As shown in Figure 1, the laser beam irradiation unit 70 includes a laser light source 71, a galvanometer mirror 72, and an fθ lens 73. The laser light source 71 is a light source that emits laser light L. The galvanometer mirror 72 is rotatable about two intersecting axes and reflects the laser light L at any angle. The fθ lens 73 focuses the laser light L from the galvanometer mirror 72 onto the transfer area of ​​the support substrate 10.

[0031] Furthermore, a slit 74 is provided between the laser light source 71 and the galvanometer mirror 72. By adjusting the size of the slit 74, the area of ​​the spot region SA (see Figure 4) of the laser beam L is adjusted. The spot region SA refers to the area of ​​the focal point when the laser beam L is focused.

[0032] The laser beam irradiation unit 70 irradiates the surface 10b (see Figure 5) of the support substrate 10 held by the support substrate holding unit 30 with laser beam L via the galvanometer mirror 72 and the fθ lens 73, opposite to the surface 10a supporting the semiconductor chip 1. The laser beam L is irradiated onto the selected semiconductor chip 1 by the galvanometer mirror 72 and the fθ lens 73. As shown in Figure 6, the laser beam L is irradiated onto the adhesive layer 2 via the support substrate 10, causing the semiconductor chip 1 to be peeled off from the support substrate 10 and transferred from the support substrate 10 to the transfer substrate 20. In other words, a transfer is performed by the laser lift-off method.

[0033] Furthermore, as shown in Figure 4, the area of ​​the spot region SA of the laser beam L is set to be smaller than the area of ​​the surface supported by the support substrate 10 of the semiconductor chip 1. Alternatively, the area of ​​the spot region SA of the laser beam L may be set according to the brittleness of the semiconductor chip 1. For example, the area of ​​the spot region SA of the laser beam L may be adjusted (set) to decrease as the thickness t (see Figure 3) of the semiconductor chip 1 decreases. For example, the thickness t of the semiconductor chip 1 is, for example, 100 μm or less. Also, the semiconductor chip 1 has, for example, a rectangular shape, and the length of one side of the semiconductor chip 1 is between several tens of μm and several millimeters. Also, the spot region SA has, for example, a rectangular shape, and the length of one side of the spot region SA is, for example, between several μm and several tens of μm.

[0034] As shown in Figure 1, the control unit 60 is composed of a processor such as a CPU (Central Processing Unit) and performs various controls by executing a program (software). The control unit 60 arbitrarily selects a semiconductor chip 1 within the transfer area and controls the transfer of the selected semiconductor chip 1 to the transfer substrate 20 by irradiating the laser beam irradiation unit 70 with laser beam L. The control unit 60 also controls the operation of the moving mechanism 50 and the opening and closing of the slit 74.

[0035] Furthermore, the control unit 60 controls the irradiation position of the laser beam L emitted from the laser beam irradiation unit 70. Specifically, the control unit 60 controls the irradiation position of the laser beam L emitted from the laser beam irradiation unit 70 by rotating the galvanometer mirror 72. Also, as shown in Figure 4, the control unit 60 controls the irradiation position of the laser beam L so that, when viewed from a direction perpendicular to the surface 10b of the support substrate 10 (Z direction), the laser beam L moves relative to the support substrate 10 and is irradiated from one end side (X2 side) to the other end side (X1 side) of the semiconductor chip 1. For example, the control unit 60 controls the irradiation position of the laser beam L so that the spot areas SA of the laser beam L do not overlap with each other. In the example shown in Figure 4, the laser beam L moves in a zigzag pattern from the X2 side to the X1 side. That is, the laser beam L moves from the Y1 side to the Y2 side, then to the X1 side, and so on. Furthermore, while Figure 4 shows an example where a single recess 1b is irradiated with laser light L in a single row, a single recess 1b may also be irradiated with laser light L in multiple rows. In Figure 4, the trajectory of the laser light L is represented by a dotted line with an arrow.

[0036] As shown in Figure 6, when the adhesive layer 2 is irradiated with laser light L, the adhesive layer 2 deforms into a convex shape that protrudes toward the Z2 side, and a blister B is generated. As shown in Figure 4, the laser light L is irradiated multiple times in a row onto one recess 1b, and the blisters B generated by the multiple laser light beams L connect to form a larger blister B. In Figure 6, it is shown that one blister B is formed in one recess 1b, but multiple blisters B are connected in the Y direction within one recess 1b. Also, in Figure 6, the blisters B formed in each of the multiple recesses 1b are separated from each other, but multiple blisters B may be connected. As the adhesive layer 2 deforms into a convex shape, the adhesion force between the semiconductor chip 1 and the adhesive layer 2 decreases, and the semiconductor chip 1 is transferred to the adhesive layer 21 of the transfer substrate 20.

[0037] (Method for transferring semiconductor chip data) Next, we will explain the method for transferring the semiconductor chip 1.

[0038] In the first embodiment, as shown in Figure 7, in step S1, before the step of irradiating with laser light L (step S3), a step of pre-identifying the recesses 1b of the semiconductor chip 1 is performed. The step of pre-identifying the recesses 1b of the semiconductor chip 1 includes a step of pre-identifying the recesses 1b of the semiconductor chip 1 while it is held by the adhesive layer 2. For example, as shown in Figure 8, the position of the recesses 1b on the uneven surface 1c (Z1 side surface) of the semiconductor chip 1 is identified by a laser microscope 110 from the Z1 direction side of the support substrate 10 that holds the semiconductor chip 1 via the adhesive layer 2. The laser microscope 110 irradiates the uneven surface 1c of the semiconductor chip 1 with laser light and measures the structure of the uneven surface 1c by analyzing the laser light reflected from the uneven surface 1c. The measured information on the structure of the uneven surface 1c is transmitted to the control unit 60. The control unit 60 obtains the position (coordinates) of the portion corresponding to the recesses 1b of the semiconductor chip 1 from the measured information on the structure of the uneven surface 1c. Information regarding the position (coordinates) of the portion corresponding to the acquired recess 1b is stored, for example, in the memory unit 61 (see Figure 1). The position (coordinates) of the portion of the semiconductor chip 1 corresponding to the recess 1b is, for example, the coordinates on the support substrate 10. The operation of the laser microscope 110 may be controlled, for example, by the control unit 60, or by a control unit separate from the control unit 60. The laser microscope 110 may or may not be included as a component of the semiconductor chip transfer apparatus 100.

[0039] In step S2, the control unit 60 determines whether or not the recesses 1b have been identified for all of the semiconductor chips 1 supported on the support substrate 10. For example, the recesses 1b are identified for each of the semiconductor chips 1 while changing the relative position between the semiconductor chips 1 and the laser microscope 110 using the moving mechanism 50. If the control unit 60 determines in step S2 that the recesses 1b have not been identified for all of the semiconductor chips 1 (the result is no in step S2), the process returns to step S1. If the control unit 60 determines in step S2 that the recesses 1b have been identified for all of the semiconductor chips 1 (the result is yes in step S2), the process proceeds to step S3.

[0040] In step S3, as shown in Figure 5, a laser beam L is irradiated from the surface 10b opposite to the surface 10a that supports the semiconductor chip 1 via the adhesive layer 2, toward the support substrate 10 on which the uneven surface 1c of the semiconductor chip 1, which has an uneven shape, is supported by the adhesive layer 2. In the first embodiment, the step of irradiating with laser beam L in step S3 includes adjusting the irradiation position of the laser beam L so that the laser beam L irradiates the adhesive layer 2 facing the recess 1b of the semiconductor chip 1. The adhesive layer 2 facing the recess 1b refers to the portion of the adhesive layer 2 facing the recess 1b in the Z direction. Alternatively, the entire laser beam L may irradiate only the portion of the adhesive layer 2 facing the recess 1b, or a portion of the laser beam L may irradiate the protrusions (electrode patterns 1a). The method (path) of irradiating with laser beam L is predetermined, for example, as shown in Figure 4, the method (path) of irradiating with laser beam L is set so that the spot regions SA are spaced apart from each other at a predetermined interval. Furthermore, the irradiation position of the laser beam L is adjusted by at least one of the following: rotation of the galvanometer mirror 72 and relative movement of the support substrate holder 30 and the transfer substrate holder 40 by the moving mechanism 50. The support substrate holder 30 and the transfer substrate holder 40 are pre-aligned.

[0041] Furthermore, in the first embodiment, the step of irradiating with laser light L in step S3 includes adjusting the irradiation position of the laser light L so as to irradiate the adhesive layer 2 facing each other between the plurality of electrode patterns 1a which constitute the recess 1b. The space between the plurality of electrode patterns 1a is the portion of the semiconductor chip 1 where no electrode patterns 1a are provided. For example, as shown in Figure 4, the space between the plurality of electrode patterns 1a is the space between electrode pattern 111 and electrode pattern 112, and between adjacent electrode patterns 112.

[0042] Furthermore, in the first embodiment, the step of irradiating with laser light L in step S3 includes adjusting the irradiation position of the laser light L so as to irradiate the adhesive layer 2 facing the recess 1b of the semiconductor chip 1 which has been previously identified. That is, the control unit 60 reads the position of the recess 1b of the semiconductor chip 1 which has been identified in steps S1 and S2 from the storage unit 61, and adjusts the irradiation position of the laser light L so as to irradiate the adhesive layer 2 facing the recess 1b of the semiconductor chip 1 based on the read position of the recess 1b of the semiconductor chip 1. Then, as shown in Figure 6, a blister B is generated in the adhesive layer 2, and the semiconductor chip 1 is transferred to the transfer substrate 20.

[0043] As shown in Figure 7, in step S4, the control unit 60 determines whether all of the multiple semiconductor chips 1 supported on the support substrate 10 have been transferred to the transfer substrate 20. That is, the control unit 60 determines whether the laser light L has been irradiated onto all of the semiconductor chips 1 stored in the storage unit 61. In step S4, if the control unit 60 determines that the transfer of all semiconductor chips 1 has not been completed (in step S4, the result is no), the process returns to step S3. In step S4, if the control unit 60 determines that the transfer of all semiconductor chips 1 has been completed (in step S4, the result is yes), the semiconductor chip transfer operation ends.

[0044] (Effects of the first embodiment) Next, the effects of the first embodiment will be described.

[0045] In the first embodiment, as described above, the step of irradiating with laser light L includes adjusting the irradiation position of the laser light L so that the laser light L irradiates the adhesive layer 2 facing the recess 1b of the semiconductor chip 1. As a result, the portion of the adhesive layer 2 facing the recess 1b of the semiconductor chip 1 is not embedded in the semiconductor chip 1, so the adhesion force between the semiconductor chip 1 and the portion of the adhesive layer 2 facing the recess 1b of the semiconductor chip 1 is low. As a result, by irradiating the adhesive layer 2 facing the recess 1b of the semiconductor chip 1, the blister B swells sufficiently, allowing the semiconductor chip 1 to be peeled off. As a result, the semiconductor chip 1 can be peeled off even if there are irregularities on the surface of the semiconductor chip 1.

[0046] In the first embodiment, as described above, the semiconductor chip 1 is provided with a plurality of electrode patterns 1a, and the step of irradiating with laser light L includes adjusting the irradiation position of the laser light L so as to irradiate the adhesive layer 2 facing the plurality of electrode patterns 1a which form recesses 1b. As a result, the adhesion force between the semiconductor chip 1 and the portion of the adhesive layer 2 facing the space between the plurality of electrode patterns 1a (recesses 1b) is low, so the blister B can be easily and sufficiently expanded. Consequently, even when the semiconductor chip 1 is provided with a plurality of electrode patterns 1a, the semiconductor chip 1 can be easily peeled off.

[0047] In the first embodiment, as described above, the method for transferring the semiconductor chip 1 further includes a step of pre-identifying the recesses 1b of the semiconductor chip 1 before the step of irradiating with laser light L. The step of irradiating with laser light L includes adjusting the irradiation position of the laser light L so as to irradiate the adhesive layer 2 facing the identified recesses 1b of the semiconductor chip 1. As a result, since the recesses 1b of the semiconductor chip 1 are pre-identified, the irradiation position of the laser light L can be easily adjusted so as to irradiate the adhesive layer 2 facing the recesses 1b.

[0048] In the first embodiment, as described above, the step of pre-identifying the recess 1b of the semiconductor chip 1 includes the step of pre-identifying the recess 1b of the semiconductor chip 1 while it is held in the adhesive layer 2. However, if the recess 1b of the semiconductor chip 1 is pre-identified before it is held in the adhesive layer 2, the semiconductor chip 1 is attached to the adhesive layer 2 after identification, and an error in the position of the recess 1b of the semiconductor chip 1 may occur due to an error in the attachment position. Therefore, by pre-identifying the recess 1b of the semiconductor chip 1 while it is held in the adhesive layer 2, no error in the position of the recess 1b of the semiconductor chip 1 caused by attachment to the adhesive layer 2 occurs, and the irradiation position of the laser beam L can be adjusted with high precision.

[0049] [Second Embodiment] (Semiconductor chip transfer equipment) As shown in Figure 9, the semiconductor chip transfer apparatus 100a of the second embodiment has the same configuration as the semiconductor chip transfer apparatus 100 of the first embodiment, except that it includes a display unit 62 and an input unit 63. The semiconductor chip transfer apparatus 100a is an example of the "element transfer apparatus" in the claims.

[0050] (Method for transferring semiconductor chip data) Next, a method for transferring the semiconductor chip 1 according to the second embodiment will be described.

[0051] In the second embodiment, as shown in Figure 10, in step S11, before the step of irradiating with laser light L (step S13), a step of acquiring an image G of the semiconductor chip 1 is performed. The step of acquiring an image G of the semiconductor chip 1 includes the step of acquiring an image G of the semiconductor chip 1 while it is held in the adhesive layer 2. For example, as shown in Figure 11, the uneven surface 1c (the Z1 side) of the semiconductor chip 1 is imaged by the imaging unit 120 from the Z1 direction side of the support substrate 10 that holds the semiconductor chip 1 via the adhesive layer 2. The imaging unit 120 is an imaging unit capable of imaging the uneven surface 1c of the semiconductor chip 1 via the support substrate 10 and the adhesive layer 2. The imaging unit 120 is, for example, an infrared camera. Furthermore, the imaging of the semiconductor chip 1 by the imaging unit 120 may be controlled by the control unit 60a, or it may be controlled by a control unit other than the control unit 60a.

[0052] In step S12, a process is performed to receive input for a region A corresponding to a recess 1b of the semiconductor chip 1 in the acquired image G. For example, as shown in Figure 12, the image G captured by the imaging unit 120 is displayed on the display unit 62. The user selects a region A corresponding to a recess 1b of the semiconductor chip 1 using an input unit 63 (see Figure 9), such as a mouse. For example, the user selects a region A by dragging the mouse. Alternatively, if the display unit 62 is a touch panel, the user may select a region A with their finger or the like. In Figure 12, region A is shown as an area enclosed by a dotted line. The selected region A is stored in the storage unit 61. The user does not have to select a region A if it is a recess 1b but seems to have high adhesion to the adhesive layer 2, or if it is a protrusion but seems to have low adhesion to the adhesive layer 2. In the second embodiment, for example, if a region A corresponding to a recess 1b is selected for one semiconductor chip 1, the control unit 60a assumes that all other semiconductor chips 1 also have regions A corresponding to recess 1b in similar positions.

[0053] In step S13, the irradiation position of the laser beam L is adjusted so as to irradiate the adhesive layer 2 facing the region A corresponding to the recess 1b of the input semiconductor chip 1, and the laser beam L is irradiated. The method of irradiating with the laser beam L in step S13 is the same as in step S3 of the first embodiment described above. Then, the process proceeds to step S4. The operation of step S4 is the same as in the first embodiment described above, so the explanation is omitted. If multiple types of semiconductor chips 1 are supported on the support substrate 10, the user selects the region A corresponding to the recess 1b for each type of semiconductor chip 1. The control unit 60a recognizes in advance which type of semiconductor chip 1 is supported at which position on the support substrate 10, and the control unit 60a executes the operations of steps S13 and S4 in accordance with the type of semiconductor chip 1.

[0054] (Effects of the second embodiment) Next, the effects of the second embodiment will be described.

[0055] In the second embodiment, as described above, the method for transferring the semiconductor chip 1 includes the steps of acquiring an image G of the semiconductor chip 1 and receiving input of a region A corresponding to a recess 1b of the semiconductor chip 1 in the acquired image G, before the step of irradiating with laser light L. The step of irradiating with laser light L includes adjusting the irradiation position of the laser light L so as to irradiate the adhesive layer 2 facing the region A corresponding to the recess 1b of the semiconductor chip 1 that was input. This allows the user to identify the recess 1b of the semiconductor chip 1 while confirming the image G of the semiconductor chip 1. Therefore, even if it is a recess 1b, areas where the adhesion force with the adhesive layer 2 is likely to be high can be excluded from irradiation with laser light L, and even if it is a convex area, areas where the adhesion force with the adhesive layer 2 is likely to be low can be targeted for irradiation with laser light L, so that areas where the blister B is likely to bulge can be appropriately selected as the irradiation position of the laser light L.

[0056] In the second embodiment, as described above, the step of acquiring an image G of the semiconductor chip 1 includes the step of acquiring an image G of the semiconductor chip 1 while it is held in the adhesive layer 2. If the image G of the semiconductor chip 1 is acquired before it is held in the adhesive layer 2, the semiconductor chip 1 is attached to the adhesive layer 2 after the recess 1b of the semiconductor chip 1 is identified. As a result, due to errors in the attachment position, there may be an error between the position of the recess 1b of the semiconductor chip 1 in the acquired image G and the position of the recess 1b of the semiconductor chip 1 after it has been attached to the adhesive layer 2. Therefore, by acquiring an image G of the semiconductor chip 1 while it is held in the adhesive layer 2, errors in the position of the recess 1b of the semiconductor chip 1 caused by attachment to the adhesive layer 2 are eliminated, and the irradiation position of the laser beam L can be adjusted with high precision. Furthermore, the other effects of the second embodiment are the same as those of the first embodiment.

[0057] [Differentiation] It should be noted that the embodiments disclosed herein are illustrative and not restrictive in all respects. The scope of the present invention is defined by the claims rather than by the description of the embodiments above, and further includes all modifications (exceptions) within the meaning and scope equivalent to the claims.

[0058] In the first and second embodiments described above, examples were shown in which the laser beam irradiation unit 70 is located on the Z1 side of the support substrate 10, but the present invention is not limited thereto. For example, the laser beam irradiation unit 70 may be located on the Z2 side of the support substrate 10, and the laser beam L may be reflected by a mirror or the like so that the support substrate 10 is irradiated with the laser beam L from the Z1 side.

[0059] In the first and second embodiments described above, examples were shown in which multiple electrode patterns 1a are recessed 1b, but the present invention is not limited thereto. For example, the outer surface of the semiconductor chip 1 itself may have an uneven shape. Alternatively, the uneven shape may be formed by structures other than the electrode patterns 1a provided on the semiconductor chip 1.

[0060] In the first embodiment described above, an example was shown in which the recesses 1b of the semiconductor chip 1 held in the adhesive layer 2 are predetermined, but the present invention is not limited thereto. For example, after identifying the recess 1b of one semiconductor chip 1 not held in the adhesive layer 2 using a laser microscope 110 or the like, multiple semiconductor chips 1 may be held in the adhesive layer 2. Then, the irradiation position of the laser beam L may be adjusted so that the positions of the recesses 1b of the multiple semiconductor chips 1 held in the adhesive layer 2 are the same as the recess 1b of the predetermined semiconductor chip 1.

[0061] In the second embodiment described above, an example was shown in which an image G of the semiconductor chip 1 held in the adhesive layer 2 is acquired, but the present invention is not limited thereto. For example, after the imaging unit 120 acquires an image of one semiconductor chip 1 that is not held in the adhesive layer 2, the user may select a region A corresponding to a recess 1b based on this image. Subsequently, multiple semiconductor chips 1 are held in the adhesive layer 2, and the irradiation position of the laser beam L may be adjusted assuming that the region A corresponding to the recess 1b of the multiple semiconductor chips 1 held in the adhesive layer 2 is the same as the region A corresponding to the recess 1b of one semiconductor chip 1 that was selected in advance.

[0062] In the second embodiment described above, an example was shown in which the user selects a region A corresponding to the recess 1b based on an image G of the semiconductor chip 1 captured by the imaging unit 120, but the present invention is not limited thereto. For example, the control unit 60a may automatically select a region A corresponding to the recess 1b by processing the image G of the semiconductor chip 1 captured by the imaging unit 120, or by using a trained model in which the image G of the semiconductor chip 1 including the recess 1b has been machine-learned.

[0063] Furthermore, although the first and second embodiments described above show examples where the support substrate 10 is circular and the transfer substrate 20 is rectangular, the present invention is not limited thereto. For example, the shapes of both the support substrate 10 and the transfer substrate 20 may be circular or polygonal.

[0064] Furthermore, while the first and second embodiments described above show an example in which the laser light irradiation unit 70 includes a laser light source 71, a galvanometer mirror 72, and an fθ lens 73, the present invention is not limited thereto. For example, a polygon mirror may be used instead of the galvanometer mirror 72, or a mask may be used instead of the galvanometer mirror 72 and the fθ lens 73.

[0065] Furthermore, while the first and second embodiments described above show examples in which the semiconductor chip 1 is used as the element of the present invention, the present invention is not limited thereto. Elements other than the semiconductor chip 1 may also be used as the element of the present invention. [Explanation of Symbols]

[0066] 1. Semiconductor chip (device) 1a Electrode pattern 1b recess 1c Uneven surface 2 Adhesive layer 10 Support substrate 10a surface (surface supporting the element) 10b surface (the surface opposite to the surface supporting the element) 100, 100a Semiconductor chip transfer apparatus (device transfer apparatus) G Image L Laser light

Claims

1. The process includes irradiating a support substrate, on which the uneven surface of an element having an uneven shape is supported by an adhesive layer, with laser light from the side of the support substrate opposite to the side that supports the element through the adhesive layer, A method for transferring an element, wherein the step of irradiating with laser light includes a step of adjusting the irradiation position of the laser light so that the laser light irradiates the adhesive layer facing the recess of the element.

2. The element is provided with a plurality of electrode patterns. The method for transferring an element according to claim 1, wherein the step of irradiating with laser light includes a step of adjusting the irradiation position of the laser light so as to irradiate the adhesive layer facing the plurality of electrode patterns which constitute the recesses.

3. The process further includes a step of pre-identifying the recess of the element before the step of irradiating it with the laser light, The element transfer method according to claim 1, wherein the step of irradiating with laser light includes a step of adjusting the irradiation position of the laser light so as to irradiate the adhesive layer facing the recess of the identified element.

4. The method for transferring an element according to claim 3, wherein the step of identifying the recesses of the element in advance includes the step of identifying the recesses of the element while it is held in the adhesive layer.

5. Prior to the step of irradiating with laser light, the step of acquiring an image of the element, The process further includes receiving input for a region corresponding to a recess of the element in the acquired image, The method for transferring an element according to claim 1, wherein the step of irradiating with laser light includes a step of adjusting the irradiation position of the laser light so as to irradiate the adhesive layer facing the region corresponding to the recess of the input element.

6. The method for transferring an element according to claim 5, wherein the step of acquiring an image of the element includes the step of acquiring an image of the element while it is held in the adhesive layer.

7. A support substrate holding part that holds a support substrate in which the uneven surface of an element having an uneven shape is supported by an adhesive layer, The support substrate includes a laser beam irradiation unit that irradiates laser light toward the support substrate from the side opposite to the side that supports the element via the adhesive layer, An element transfer apparatus in which the irradiation position of the laser light irradiation unit is adjusted so that the laser light irradiates the adhesive layer facing the recess of the element.

Images