Substrate processing equipment

Abstract

The present invention provides a substrate processing apparatus that can improve temperature uniformity in the circumferential direction of a substrate. [Solution] The substrate processing apparatus 1 of the embodiment includes a rotating holding unit 10 that rotates a substrate W held by a holding member 12, a processing liquid supply unit 20 that supplies processing liquid Lp to the upper surface of the rotating substrate W, and a heating unit 50 that irradiates heating light from above the upper surface of the substrate W, wherein at least the portion of the holding member that is in contact with the substrate W transmits light.

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus. [Background Art]

[0002] A single-wafer type substrate processing apparatus is known that holds an outer peripheral edge of a substrate such as a semiconductor wafer by a holding portion, rotates the held substrate by a rotary table, supplies a processing liquid to the substrate, and performs processing such as etching treatment and resist removal treatment. In such a substrate processing apparatus, heating the substrate being processed and the processing liquid on the substrate raises the temperature of the processing liquid, thereby improving processing efficiency. [Prior Art Documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Unexamined Patent Publication No. 2015-211201 [Summary of the Invention] [Problem to be Solved by the Invention]

[0004] As an example of a heating method in a substrate processing apparatus, there is heating by light irradiation. For example, there is a substrate processing apparatus in which a light source that emits heating light is disposed so as to face a substrate held on a rotary table. Since the substrate or the processing liquid on the substrate is heated by the light emitted from the light source, processing efficiency can be improved.

[0005] In a substrate processing apparatus that employs a light heating method, part of the light emitted from the light source travels outward beyond the substrate and enters structures around the substrate. Then, the light is reflected by the structure, and the reflected light enters the substrate. For example, the rotary table, which is a structure, has its outer peripheral area not blocked by the substrate, so it reflects light from the light source. As a result, the substrate or the processing liquid on the substrate is heated not only by the light from the light source but also by the reflected light from the structure.

[0006] However, in the area where the retaining member that holds the outer edge of the substrate is provided, reflected light is blocked. As a result, in the outer region of the substrate, there are areas that are heated by reflected light and areas that are not heated by reflected light. In other words, since there is no heating by reflected light near the retaining member, the temperature becomes lower than in other areas, and the uniformity of the circumferential processing rate (amount processed per unit time) in the outer region of the substrate decreases.

[0007] Embodiments of the present invention have been proposed to solve the above-mentioned problems, and their objective is to provide a substrate processing apparatus that can improve temperature uniformity in the circumferential direction of the substrate. [Means for solving the problem]

[0008] The substrate processing apparatus according to the embodiment includes a rotating holding unit for rotating a substrate held by a holding member, a processing liquid supply unit for supplying a processing liquid to the surface of the rotating substrate opposite to the opposing surface, and a heating unit for irradiating heating light from above the surface of the substrate to which the processing liquid is supplied, wherein at least the portion of the holding member that is in contact with the substrate transmits the light. [Effects of the Invention]

[0009] According to embodiments of the present invention, it is possible to improve the temperature uniformity in the circumferential direction of the substrate. [Brief explanation of the drawing]

[0010] [Figure 1] This is a partial axial cross-sectional view showing the supply of processing liquid in the substrate processing apparatus of the first embodiment. [Figure 2] This is a partial cross-sectional view in the axial direction showing the supply of rinsing solution in the substrate processing apparatus shown in Figure 1. [Figure 3] This is a partial axial cross-sectional view showing the loading and unloading of substrates in the substrate processing apparatus shown in Figure 1. [Figure 4] These are plan views (A) showing the open position of the retaining member in the rotary table and (B) showing the closed position. [Figure 5] This is a flowchart showing the processing procedure of the embodiment. [Figure 6] This graph shows the difference in etching amount at circumferential positions when a light-impermeable retaining member is used. [Figure 7] This graph shows the difference in etching amount at circumferential positions when a light-transmitting holding member is used. [Modes for carrying out the invention]

[0011] Hereinafter, embodiments of the present invention will be described with reference to the drawings. [overview] As shown in Figure 1, the substrate processing apparatus 1 of this embodiment processes the substrate W by supplying a processing liquid Lp from a processing liquid supply unit 20 to the substrate W while rotating the substrate W held in a rotating holding unit 10. The substrate processing apparatus 1 is a single-wafer type apparatus that performs etching by supplying an etching-capable processing liquid Lp to the substrate W. Furthermore, as shown in Figure 2, the substrate processing apparatus 1 performs rinsing by supplying a rinsing liquid Lc from a rinsing liquid supply unit 30 to the substrate W before and after supplying the processing liquid Lp.

[0012] The substrate processing apparatus 1 has a heating unit 50 that heats the substrate W by irradiation with light. The heating unit 50 has a light source that heats the substrate W itself by irradiating it with light of a wavelength that heats the substrate W. In other words, the object that the heating unit 50 heats is the substrate W.

[0013] The substrate W to be processed is, for example, a disc-shaped silicon wafer (hereinafter referred to as a Si substrate) on which a silicon nitride film and a silicon oxide film are formed on the surface. The processing solution Lp is, for example, an aqueous solution containing phosphoric acid (hereinafter referred to as a phosphoric acid solution). The concentration of phosphoric acid in the processing solution Lp is, for example, 85-94 wt%. The rinsing solution Lc is, for example, pure water (H₂O).

[0014] [composition] A substrate processing apparatus 1 according to the present embodiment includes a rotation holding section 10, a processing liquid supply section 20, a rinse liquid supply section 30, a recovery section 40, a heating section 50, an elevation mechanism 60, and a control device 70, as shown in FIG. 1.

[0015] (Rotation Holding Section) The rotation holding section 10 rotates a substrate W held by a holding member 12 described below. The rotation holding section 10 includes a rotary table 11, a holding member 12, an accommodation section 13, and a driving section 14.

[0016] <Rotary Table> The rotary table 11 holds the substrate W by the holding member 12, and has a facing surface 11a that faces the held substrate W with a space therebetween. The rotary table 11 is a cylindrical member, the upper end of which is closed by the circular facing surface 11a. The facing surface 11a has a larger diameter than the substrate W. The rotary table 11 is made of, for example, PTFE.

[0017] <Holding Member> The holding member 12 is a member that holds the outer peripheral edge of the substrate W so as to face the facing surface 11a with a space therebetween. As shown in FIG. 1, FIGS. 4(A) and 4(B), a plurality of holding members 12 protrude above the rotary table 11 and are provided at equal intervals along a position corresponding to the outer peripheral edge of the substrate W. The holding member 12 is provided to be movable between a closed position, where it contacts the outer peripheral edge of the substrate W to hold the substrate W, and an open position, where it separates from the outer peripheral edge of the substrate W to release the substrate W, by an opening / closing mechanism not shown.

[0018] The holding member 12 transmits light from the heating unit 50, which will be described later. In the present embodiment, the entire holding member 12 is formed of a light-transmitting material. For example, PCTFE (polychlorotrifluoroethylene) is used for the holding member 12. PCTFE, with a central wavelength of 395 nm which is the wavelength of light emitted by the light-emitting element 51 of the heating unit 50 described later, exhibits a transmittance of 58.2% for a measurement sample with a thickness of 3 mm, 45.2% for a measurement sample with a thickness of 5 mm, and 30.7% for a measurement sample with a thickness of 8 mm. As described above, the holding member 12 is preferably formed of a light-transmitting material for the light used to heat the substrate W. For example, the holding member 12 is preferably formed of a material having a transmittance of 30% or more for a sample with a thickness of 5 mm.

[0019] The holding member 12 includes a base 121, a guide 122, and a pin 123. All of the base 121, the guide 122, and the pin 123 transmit light.

[0020] The base 121 is a cylindrical member rotatable around an axis parallel to the axis of the rotary table 11. Three or more bases 121 are arranged along a circle centered on the axis of the rotary table 11. This circle corresponds to the outer periphery of the substrate W positioned around the axis. As shown in FIGS. 4(A) and 4(B), six bases 121 are arranged at equal intervals in the circumferential direction in the present embodiment. The top surface of each base 121 is exposed from the rotary table 11. Each base 121 is provided so as to be synchronously rotatable by an opening / closing mechanism (not shown).

[0021] As shown in FIGS. 1 to 3, the guide 122 is a plate body raised from the top surface of the base 121. The guide 122 has an inclined surface that becomes higher toward the outer periphery of the rotary table 11. The pin 123 is a cylinder provided at a position eccentric from the axis of the base 121 and on the top of the guide 122. Since the diameter of the pin 123 increases upward, the outer peripheral surface is a reverse tapered surface.

[0022] The pin 123 moves between an open position and a closed position in accordance with the rotation of the base 121. In the closed position shown in Figure 4(B), the pin 123 holds the substrate W by contacting the outer edge of the substrate W. In the open position shown in Figure 4(A), the pin 123 releases the substrate W by moving away from it. In this embodiment, the six pins 123 contact the substrate W in a synchronous manner, holding the substrate W so that its center coincides with the axis of the rotary table 11.

[0023] Furthermore, with pin 123 in the open position, the substrate W is placed on the inclined surface of guide 122 (see Figures 3 and 4(A)). Then, as base 121 rotates, the inclined surface of guide 122 moves, lifting the substrate W, and the outer edge of the substrate W is held by pin 123, which is now in the closed position (see Figure 4(B)).

[0024] <Storage Area> The housing section 13 houses the opening and closing mechanism of the holding member 12. The housing section 13 is a cylindrical member. The housing section 13 is housed in the lower part of the rotary table 11 and houses the opening and closing mechanism of the holding member 12.

[0025] <Drive Unit> The drive unit 14 is a drive source (motor) that rotates the rotary table 11. By rotating the rotary table 11, the drive unit 14 rotates the substrate W held by the pins 123.

[0026] (Processing liquid supply unit) As shown in Figure 1, the processing liquid supply unit 20 supplies processing liquid Lp to the side of the rotating substrate W opposite to the opposing surface 11a. In other words, the processing liquid supply unit 20 processes the substrate W by supplying processing liquid Lp to the upper surface (surface to be processed) of the substrate W, which is held by the holding member 12 and rotated by the rotary table 11. The processing liquid supply unit 20 includes a processing liquid nozzle 21, a processing liquid supply pipe 22, a heater 23, and a valve 24.

[0027] The processing liquid nozzle 21 is inserted through the support portion 52 and the transparent window 53 of the heating portion 50, which will be described later, and the discharge port 21a at the tip is positioned to face the vicinity of the center of the substrate W held by the rotating holding portion 10.

[0028] The processing liquid nozzle 21 is connected to a processing liquid supply source 25, such as a tank in which the processing liquid Lp is stored, via a processing liquid supply pipe 22. In this embodiment, the processing liquid Lp supplied from the processing liquid supply source 25 is preheated. A heater 23 is provided in the middle of the processing liquid supply pipe 22. The processing liquid Lp supplied from the processing liquid supply source 25 passes through the processing liquid supply pipe 22, is heated by the heater 23, and is then discharged from the discharge port 21a of the processing liquid nozzle 21 to the vicinity of the center of the substrate W.

[0029] The temperature of the processing liquid Lp discharged from the processing liquid nozzle 21 is, for example, 160°C. Furthermore, a valve 24 is provided in the middle of the processing liquid supply pipe 22. By opening and closing the valve 24, the discharge of the processing liquid Lp from the processing liquid nozzle 21 is started and stopped. The valve 24 is electrically connected to a control device 70, which will be described later, and its opening and closing is controlled by the control device 70.

[0030] (Rinsing liquid supply unit) As shown in Figure 2, the rinse liquid supply unit 30 supplies rinse liquid Lc to the side of the rotating substrate W opposite to the opposing surface 11a. In other words, the rinse liquid supply unit 30 cleans the substrate W by supplying rinse liquid Lc to the upper surface of the substrate W, which is held by the holding member 12 and rotated by the rotary table 11. For example, pure water can be used as the rinse liquid Lc.

[0031] The rinse liquid supply unit 30 includes a rinse liquid nozzle 31, a rinse liquid supply pipe 32, and a valve 33. The rinse liquid nozzle 31 is inserted through the support portion 52 and the transparent window 53 of the heating unit 50, which will be described later, and the discharge port 31a at its tip is positioned to face the vicinity of the center of the substrate W held by the rotating holding unit 10.

[0032] The rinse liquid nozzle 31 is connected to a rinse liquid supply source 34, such as a tank, where the rinse liquid Lc is stored, via a rinse liquid supply pipe 32. The rinse liquid Lc supplied from the rinse liquid supply source 34 passes through the rinse liquid supply pipe 32 and is discharged from the discharge port 31a of the rinse liquid nozzle 31 to the vicinity of the center of the substrate W. A valve 33 is provided in the middle of the rinse liquid supply pipe 32. By opening and closing the valve 33, the discharge of the rinse liquid Lc from the rinse liquid nozzle 31 is started and stopped. The valve 33 is electrically connected to a control device 70, which will be described later, and its opening and closing are controlled by the control device 70.

[0033] (Liquid receiving section) As shown in Figure 1, the recovery unit 40 is provided so as to surround the rotating holding unit 10 and receives the processing liquid Lp and rinsing liquid Lc scattered from the rotating substrate W. The recovery unit 40 discharges the received processing liquid Lp and rinsing liquid Lc to the outside of the substrate processing apparatus 1.

[0034] The collection unit 40 includes a first cup 41, a second cup 42, a lifting mechanism 43, a first liquid receiving section 44, and a second liquid receiving section 45. The first cup 41 and the second cup 42 cover the outer circumference of the rotating substrate W, spaced apart from the substrate W and the rotary table 11. The first cup 41 and the second cup 42 are cylindrical bodies bent so that their diameters narrow at the top. The first cup 41 has a smaller diameter than the second cup 42 and is positioned inside the second cup 42.

[0035] The first cup 41 has a skirt portion 41a on its side facing the second cup 42. The skirt portion 41a is a cylindrical body bent so that its upper diameter narrows, and its upper end is fixed to the side of the first cup 41. This skirt portion 41a forms an annular space below the first cup 41 that is closed at the top and open at the bottom.

[0036] The first cup 41 is provided to be movable between a standby position SB1 and a cover position CB1. The standby position SB1 is the lowered position that allows the substrate W to be loaded and unloaded (see Figure 3). This standby position SB1 is at or below the height of the opposing surface 11a of the rotary table 11. The cover position CB1 is the raised position that allows the first cup 41 to receive the processing liquid Lp splashed from the substrate W (see Figure 1). When the substrate W is being processed with the processing liquid Lp, light is irradiated from the heating unit 50, so when the heating unit 50 is irradiating light, the first cup 41 is in the cover position CB1. In the cover position CB1, the height of the upper end of the inner wall of the first cup 41 is at or above the height of the position from which the heating unit 50 emits light. In other words, the height of the upper end of the inner wall of the first cup 41 is at or above the height of the bottom surface of the transparent window 53 of the heating unit 50.

[0037] The second cup 42 is provided to be movable between a standby position SB2 and a cover position CB2. The standby position SB2 is the lowered position that allows the substrate W to be loaded and unloaded (see Figure 3). The cover position CB2 is the raised position that allows the second cup 42 to receive the rinse liquid Lc splashed from the substrate W (see Figure 2) or the raised position when the first cup 41 is in the cover position CB1 (see Figure 1).

[0038] The lifting mechanism 43 is a mechanism that individually raises and lowers the first cup 41 and the second cup 42. Various mechanisms can be applied as the lifting mechanism 43, such as a cylinder or a ball screw mechanism, which move the first cup 41 and the second cup 42 in a direction parallel to the axis of the rotary table 11, but details are omitted. Note that the lifting mechanism 43 may be configured separately for the first cup 41 and the second cup 42.

[0039] The first cup 41 moves to cover position CB1 when processing with processing liquid Lp, and moves to standby position SB1 when rinsing with rinsing liquid Lc or when loading / unloading the substrate W. The second cup 42 moves to cover position CB2 when rinsing with rinsing liquid Lc or processing with processing liquid Lp, and moves to standby position SB2 when loading / unloading the substrate W.

[0040] The first liquid receiving section 44 is an annular container located below the first cup 41 and has an open top. The second liquid receiving section 45 is an annular container located below the second cup 42 and has an open top. The first liquid receiving section 44 and the second liquid receiving section 45 are constructed by dividing the inside of the annular container into an inner and outer section by a cylindrical partition wall 46. The first liquid receiving section 44 receives the processing liquid Lp that falls downward from the first cup 41. The second liquid receiving section 45 receives the rinsing liquid Lc that falls downward from the second cup 42.

[0041] Since the partition wall 46 is interposed non-contact between the side wall of the first cup 41 and the inner wall of the skirt portion 41a, a labyrinth structure with a curved path is formed, making it difficult for the processing liquid Lp to enter the second liquid receiving portion 45. Drain ports 44a and 45a are formed at the bottom of the first liquid receiving portion 44 and the second liquid receiving portion 45, respectively. Drain port 44a is connected to the recovery path of the processing liquid Lp via a drain pipe (not shown) for discharging the processing liquid Lp. Drain port 45a is connected to the recovery path of the rinse liquid Lc via a drain pipe (not shown) for discharging the rinse liquid Lc.

[0042] (heating part) As shown in Figure 1, the heating unit 50 irradiates heating light from above the surface of the substrate W to which the processing liquid Lp is supplied. In other words, the heating unit 50 heats the substrate W, which is held and rotated by the rotating holding unit 10, by irradiating it with light from the light source.

[0043] The processing liquid Lp supplied to the vicinity of the center of the substrate W flows outwards towards the outer edge of the substrate W due to centrifugal force. In this case, without further heating, the supplied high-temperature (160°C) processing liquid Lp will decrease in temperature as it flows over the substrate W due to heat conduction and heat dissipation. Therefore, by heating the substrate W, the processing liquid Lp on the substrate W can be heated by heat conduction from the substrate W, and the processing liquid Lp on the substrate W can be maintained at a high temperature. In addition to maintaining the temperature of the processing liquid Lp, the output of the heating unit 50 may be controlled to further increase the temperature on the substrate W.

[0044] A light-emitting element 51 is used as the light source. The light-emitting element 51 emits light (electromagnetic waves) of a wavelength that heats the substrate W when absorbed by the substrate W. The light emitted by the light-emitting element 51 is light of a wavelength that penetrates the processing liquid Lp. Here, "absorbed by the substrate W" means that the light incident on the substrate W is absorbed to the extent that it can sufficiently heat the substrate W, and this includes not only complete absorption by the substrate W, but also partial reflection or transmission of the light by the substrate W. "Transmitted through the processing liquid Lp" means that the light incident on the processing liquid Lp penetrates the processing liquid Lp to the extent that it can sufficiently heat the substrate W, and this also includes partial absorption or reflection of the light by the processing liquid Lp.

[0045] As the light-emitting element 51, for example, an LED that emits heating light is used. The wavelength of the light emitted by this LED is, for example, 350 to 1060 nm (350 nm or more, and 1060 nm or less). More preferably, the central wavelength is 395 to 940 nm (395 nm or more, and 940 nm or less). In this embodiment, an LED with a central wavelength of 395 nm is used. The output of the light-emitting element 51 is controlled by a control device 70, which will be described later.

[0046] As a result, even if light from the light-emitting element 51 is irradiated from above the space in which the substrate W is held, that is, from above the processing solution Lp supplied to the substrate W, the light will pass through the processing solution Lp on the substrate W, be absorbed by the substrate W, and heat the substrate W. Then, the temperature of the processing solution Lp rises due to heat conduction from the substrate W, and the etching rate (processing rate) increases.

[0047] As described above, in this embodiment, the entire holding member 12 transmits light. Therefore, when light from the heating unit 50 is reflected by a structure that is not blocked by the substrate W, it enters the substrate W, and even in the portion held by the holding member 12, the reflected light passes through the holding member 12 and enters the substrate W. As a result, the entire circumference of the substrate W is heated by the reflected light.

[0048] The heating unit 50 has, in addition to the light-emitting elements 51, a support unit 52 and a transmissive window 53. The support unit 52 is a member that supports multiple light-emitting elements 51. The support unit 52 is a cylindrical member whose upper end is closed by a top plate 52a. The diameter of the support unit 52 is the same as or larger than the diameter of the substrate W. The support unit 52 is positioned above the rotary table 11, facing the opposing surface 11a with a gap between them. As a result, the heating unit 50 is configured to irradiate light from the light-emitting elements 51 from above the space in which the substrate W is held by the rotating holding unit 10.

[0049] The transmissive window 53 is a disc-shaped member that covers the end of the support portion 52 facing the rotary table 11. The transmissive window 53 is made of a material that is resistant to the processing liquid Lp and through which light emitted from the light-emitting element 51 can pass. For example, a transmissive window 53 made of quartz glass may be used.

[0050] The transmissive window 53 is larger than or equal to the substrate W. In other words, the transmissive window 53 has the same diameter as the substrate W or a larger diameter than the substrate W. Furthermore, in this embodiment, the transmissive window 53 has a smaller diameter than the opposing surface 11a of the rotary table 11, thereby suppressing the irradiation of light to structures outside the substrate W. Light from the light-emitting element 51 is irradiated onto the substrate W through the transmissive window 53. As described above, when light is irradiated by the heating unit 50, the height of the upper end of the inner wall of the first cup 41 is higher than the position from which the heating unit 50 emits light. In other words, the height of the upper end of the inner wall of the first cup 41 in cover position CB1 is above the height of the bottom surface of the transmissive window 53.

[0051] As shown in Figure 1, two through holes are provided near the center of the top plate 52a of the support section 52, and through holes are provided in the transparent window 53 at positions opposite to the through holes in the top plate 52a. A processing liquid nozzle 21 and a rinsing liquid nozzle 31 are inserted through each of the two pairs of opposing through holes in the top plate 52a and the transparent window 53, and the discharge ports 21a and 31a of their respective tips are exposed from the transparent window 53 and directed toward the substrate W.

[0052] Multiple light-emitting elements 51 are mounted on the support section 52 so as to face the rotary table 11 with a translucent window 53 in between. The heating section 50 has multiple regions where the light-emitting elements 51 are arranged. In other words, the multiple light-emitting elements 51 are arranged in multiple regions. In this embodiment, the light-emitting elements 51 are provided in regions corresponding to different radial positions on the substrate W, and the output of the light-emitting elements 51 can be controlled for each region. Furthermore, the multiple light-emitting elements 51 are arranged so that light can be irradiated onto the entire surface of the substrate W to be processed.

[0053] (Lifting mechanism) As shown in Figure 1, the lifting mechanism 60 supports and raises the heating section 50. The lifting mechanism 60 has an arm 61 and a support column 62. The arm 61 is a member that extends in a direction parallel to the substrate W, and the outer circumference of the support section 52 is connected to one end of it. The support column 62 is erected in a direction perpendicular to the substrate W and supports the other end of the arm 61. The support column 62 is provided to be movable up and down by a drive source such as a ball screw mechanism or a cylinder (not shown).

[0054] The heating unit 50 is positioned at one of the following heights: the loading / unloading position P1, the heating position P2, or the rinsing position P3, by the drive of the lifting mechanism 60. The respective positions are as follows: Loading / unloading position P1: A position at a height above the rotary table 11 so that the hand H of the transport robot can be inserted (see Figure 3). Heating position P2: A height position closer to the substrate W than the loading / unloading position P1 (see Figure 1). However, it does not come into contact with the processing liquid Lp on the substrate W. Rinse position P3: Height position between the loading / unloading position P1 and the heating position P2 (see Figure 2).

[0055] (Control device) The control device 70 controls various parts of the substrate processing apparatus 1. The control device 70 has a processor that executes programs to realize various functions of the substrate processing apparatus 1, a memory that stores various information such as programs and operating conditions, and drive circuits that drive each element. In other words, the control device 70 controls the rotation holding unit 10, the processing liquid supply unit 20, the rinsing liquid supply unit 30, the recovery unit 40, the heating unit 50, the lifting mechanism 60, and so on.

[0056] More specifically, the control device 70 controls the operation of the opening and closing mechanism of the rotation holding unit 10, the drive unit 14, the heater 23 and valve 24 of the processing liquid supply unit 20, the valve 33 of the rinsing liquid supply unit 30, the lifting mechanism 43 and lifting mechanism 60 of the recovery unit 40, and so on.

[0057] [Operation] The operation of the substrate processing apparatus 1 of this embodiment, as described above, will be explained with reference to the flowchart in Figure 5, in addition to Figures 1 to 4 above. Note that a substrate processing method that processes the substrate W according to the following procedure is also one aspect of this embodiment.

[0058] As shown in Figure 3, the heating unit 50 is pre-positioned at the loading / unloading position P1, the first cup 41 is positioned at the standby position SB1, and the second cup 42 is positioned at the standby position SB2. The valve 24 of the processing liquid supply unit 20 and the valve 33 of the rinsing liquid supply unit 30 are closed.

[0059] In this state, the pin 123 is in the open position, and the substrate W held by the hand H of the transport robot is moved between the heating unit 50 and the rotary table 11. Then, the pin 123 closes, and the outer edge of the substrate W is supported by the pin 123 (see Figure 4(B)). As a result, the substrate W is held on the opposing surface 11a of the rotary table 11, with a gap between it and the opposing surface 11a (step S01). At this time, the substrate W is positioned so that its center coincides with the rotation axis of the rotary table 11. Subsequently, as shown in Figure 2, the second cup 42 rises and is positioned in the cover position CB2 (step S02).

[0060] Next, as the rotary table 11 rotates, the substrate W held by the pins 123 begins to rotate, and the heating unit 50 descends and is positioned at the rinsing position P3 (step S03).

[0061] Then, the valve 33 of the rinse liquid supply unit 30 opens, and rinse liquid Lc is discharged from the rinse liquid nozzle 31 to the vicinity of the center of the substrate W (step S04). As the rinse liquid Lc is supplied to the rotating substrate W, it moves sequentially toward the outer circumference of the substrate W and spreads across the entire surface of the substrate W being processed. The rinse liquid Lc that splashes outward from the substrate W hits the inner wall of the second cup 42 and falls downward, flowing into the second liquid receiving unit 45. It is then discharged from the drain port 45a formed in the second liquid receiving unit 45.

[0062] Without the supply of rinsing liquid Lc, when the processing liquid Lp is supplied, surface tension prevents the processing liquid Lp from spreading evenly across the entire surface of the substrate W to be processed, resulting in uneven processing. In this embodiment, to prevent such uneven processing, rinsing liquid Lc is supplied in this step before supplying the processing liquid Lp. When the preset rinsing time has elapsed (YES in step S05), the valve 33 of the rinsing liquid supply unit 30 is closed, and the discharge of rinsing liquid Lc from the rinsing liquid nozzle 31 stops (step S06).

[0063] Next, as shown in Figure 1, the first cup 41 rises and is positioned at the cover position CB1 (step S07), the heating unit 50 begins to descend and stops when it reaches the heating position P2 (step S08). Then, the valve 24 of the processing liquid supply unit 20 is opened, and the processing liquid Lp is discharged from the processing liquid nozzle 21 to the vicinity of the center of the substrate W, and heating of the substrate W by irradiation with light from the light-emitting element 51 begins (step S09).

[0064] When the processing liquid Lp is supplied to the rotating substrate W, the processing liquid Lp moves sequentially toward the outer circumference of the substrate W and spreads across the entire surface of the substrate W to be processed, thereby allowing the processing by the processing liquid Lp to proceed. The processing liquid Lp that is scattered outward from the substrate W hits the inner wall of the first cup 41 and falls downward, flowing into the first liquid receiving section 44. It is then discharged from the drain port 44a formed in the first liquid receiving section 44.

[0065] Since the rinsing liquid Lc is supplied to the surface of the substrate W beforehand, the processing liquid Lp spreads evenly across the entire surface of the substrate W, preventing uneven processing. Also, since the substrate W is heated by the light from the heating unit 50, the temperature drop of the processing liquid Lp on the substrate W is suppressed. Reflected light from the opposing surface 11a and side surface 11b of the rotary table 11 and the first cup 41 enters the substrate W directly where there is no holding member 12, and passes through the holding member 12 before entering the substrate W where there is a holding member 12. As a result, circumferential variation in the amount of incident light is reduced. This processing with the processing liquid Lp is continued until a preset processing time has elapsed (NO in step S10).

[0066] When the pre-set processing time has elapsed (YES in step S10), the valve 24 of the processing liquid supply unit 20 closes, stopping the supply of processing liquid Lp from the processing liquid nozzle 21 and stopping the irradiation of light from the light-emitting element 51 (step S11).

[0067] As shown in Figure 2, the first cup 41 is positioned at the standby position SB1 (step S12), the heating unit 50 starts to rise, reaches the rinsing position P3 and stops (step S13). Then, the valve 33 of the rinsing liquid supply unit 30 is opened, and rinsing liquid Lc is discharged from the rinsing liquid nozzle 31 to the vicinity of the center of the substrate W (step S14). As the rinsing liquid Lc is supplied to the rotating substrate W, it moves sequentially toward the outer circumference of the substrate W and spreads over the entire surface of the substrate W to be processed.

[0068] When rinsing solution Lc is supplied to the processing solution Lp, which is a phosphoric acid solution, a large amount of water vapor is generated. At this time, since the heating unit 50 is located at the rinsing position P3, which is further away from the substrate W than the heating position P2, the adhesion of water vapor to the heating unit 50 can be suppressed. Also, since the rinsing position P3 is closer to the substrate W than the loading / unloading position P1, liquid splashing can be suppressed, and the adhesion of liquid droplets to the heating unit 50 can be suppressed.

[0069] When the preset rinsing time has elapsed (YES in step S15), the valve 33 of the rinsing fluid supply unit 30 is closed, and the discharge of rinsing fluid Lc from the rinsing fluid nozzle 31 stops (step S16). As the rotary table 11 stops, the substrate W held by the pin 123 stops rotating (step S17). Subsequently, the second cup 42 descends and is positioned in the standby position SB2 (step S18).

[0070] As shown in Figure 3, the heating unit 50 rises and is positioned at the loading / unloading position P1 (step S19). In this state, the hand H of the transport robot is inserted below the substrate W, and the pin 123 opens, allowing the substrate W to be placed on the hand H of the transport robot and unloaded (step S20). At this time, the rinsing liquid Lc is held on the substrate W.

[0071] [effect] (1) The substrate processing apparatus 1 of this embodiment includes a rotating holding unit 10 that rotates a substrate W held by a holding member 12, a processing liquid supply unit 20 that supplies processing liquid Lp to the upper surface of the rotating substrate W, and a heating unit 50 that irradiates heating light from above the upper surface of the substrate W, wherein at least the portion of the holding member 12 that is in contact with the substrate W transmits light.

[0072] When light emitted from the heating unit 50 is reflected by structures surrounding the substrate W, such as the rotating table 11 and the first cup 41, a portion of it is directed towards the substrate W. In areas where there is no holding member 12, the reflected light is incident on the substrate W without being obstructed by the holding member 12, thus heating the substrate W. In this embodiment, even in areas where the holding member 12 is present, the holding member 12 transmits the reflected light, so the reflected light is incident on the substrate W and heats the substrate W. As a result, the difference in the amount of incident light in the circumferential direction of the substrate W is reduced, and the uniformity of the temperature in the circumferential direction is improved.

[0073] (2) The light-transmitting portion of the holding member 12 is made of PCTFE. This provides light transmission that allows heating of the substrate W while maintaining resistance to the processing liquid Lp.

[0074] Figures 6 and 7 show graphs illustrating an example of measuring the etching amount in the outer peripheral region of the substrate W over one full rotation (360°). Figure 6 shows the case where the retaining member 12 is formed from black PTFE (transmittance approximately 0%), while Figure 7 shows the case where the retaining member 12 is formed from light-transmitting PCTFE. In Figures 6 and 7, the horizontal axis represents the circumferential position (rotation angle), and the vertical axis represents the etching amount. Since the scales of the vertical and horizontal axes in Figures 6 and 7 are aligned, the magnitude of the difference in etching amount can be compared. In Figures 6 and 7, a decrease in etching amount can be observed with a period of 60°. The positions where the etching amount decreases correspond to the locations where the six retaining members 12 are provided. As can be seen from Figures 6 and 7, in the case of the retaining member 12 formed from light-transmitting PCTFE, the difference between the areas with high and low circumferential etching amounts is smaller compared to the case where the retaining member 12 is formed from black PTFE.

[0075] (3) The entire retaining member 12 transmits light. As a result, the amount of light transmitted as reflected light increases, further reducing the difference in circumferential light intensity between areas where the retaining member 12 is not present, and since the entire retaining member 12 can be formed from a common material, the manufacturing and processing of the retaining member 12 becomes easier.

[0076] (4) The heating unit 50 has a transparent window 53 that is larger than or equal to the substrate W, and irradiates the substrate W with light through the transparent window 53. This allows the entire surface of the substrate W to be irradiated with light and heated, and also suppresses the blocking of reflected light from structures surrounding the substrate W.

[0077] (5) The heating unit 50 has multiple LEDs as light-emitting elements 51. Therefore, the entire substrate W can be heated uniformly by the multiple LEDs.

[0078] [Differentiation] (1) The holding member 12 does not need to be translucent as a whole. It is sufficient that at least the portion in contact with the substrate W transmits light. For example, in the case of the holding member 12 of the above structure, only the pin 123, or only the pin 123 and the guide 122, may be configured to transmit light. Alternatively, only the portion exposed above the rotary table 11 may be configured to transmit light.

[0079] (2) The light source of the heating unit 50 is not limited to LEDs. Any light source that can heat the object to be heated is acceptable. For example, a halogen lamp or a flash lamp may be used. However, arranging multiple LEDs allows for more uniform heating.

[0080] (3) The light-transmitting material is not limited to PCTFE. For example, quartz glass may also be used.

[0081] (4) The holding member 12 only needs to be able to hold the outer edge of the substrate W, and is not limited to being held by an eccentrically rotating pin 123. For example, it may be a hook-shaped member that rotates in a direction toward and away from the outer edge of the substrate W about a horizontal axis.

[0082] (5) The processing performed by the substrate processing apparatus 1 is not limited to etching. Any apparatus that processes the substrate W by supplying a processing solution Lp while heating the substrate W is acceptable. For example, it may be a resist removal process to remove a resist film formed on the substrate W.

[0083] (6) The treatment solution Lp is not limited to phosphoric acid solution. Any treatment solution Lp that requires heating is acceptable. For example, hydrofluoric acid can be used. In the case of resist removal treatment, SPM (hydrogen peroxide sulfate aqueous solution) can also be used as the treatment solution Lp.

[0084] (7) The substrate W to be processed may be a Si substrate with a resist formed on its surface. Furthermore, the substrate W is not limited to a Si substrate. For example, it may be a SiC substrate (silicon carbide wafer).

[0085] (8) The number and placement of the light-emitting elements 51 are not limited to the embodiments exemplified above. The light from the light source may be guided onto the substrate W via an optical fiber and emitted. For this reason, the light-emitting elements 51 do not need to be placed above the substrate W.

[0086] (9) In the above embodiment, the rinse liquid nozzle 31 is configured to penetrate the support portion 52 and the transparent window 53, but a mechanism for moving the rinse liquid nozzle 31 in the horizontal direction may be provided so that when supplying the rinse liquid Lc, the rinse liquid nozzle 31 is moved to an upper position near the center of the substrate W.

[0087] (10) The support portion 52 on which the light-emitting element 51 is placed is a circular member with a diameter equal to or greater than the diameter of the substrate W, but is not limited to this. It is sufficient that the entire surface of the substrate W can be illuminated as the substrate W rotates. For example, it may be a rectangular member large enough to cover the radius of the substrate W. If the area corresponding to the radius of the substrate W can be illuminated, the entire surface of the substrate W can be illuminated as the substrate W rotates. Alternatively, the support portion 52 may be provided so as to be able to swing horizontally, and the entire surface of the substrate W can be illuminated by swinging while emitting light from the light-emitting element 51.

[0088] Thus, if the support portion 52 is smaller than the diameter of the substrate W, a mechanism for moving the processing liquid nozzle 21 horizontally may be provided so that it is moved upwards on the substrate W when supplying the processing liquid. In other words, the placement of the processing liquid nozzle 21 is not limited as long as it can supply the processing liquid Lp toward the center of the substrate W while irradiating it with light from the light-emitting element 51.

[0089] [Other embodiments] Although embodiments and modifications of the present invention have been described above, these embodiments and modifications are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, combinations, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the invention described in the claims. [Explanation of Symbols]

[0090] 1. Substrate processing device 10 Rotating holding part 11 Rotating Table 11a Opposite side 11b Side 12 Retaining member 13. Detention Unit 14 Drive Unit 20 Processing liquid supply unit 21 Processing liquid nozzle 21a Discharge port 22 Processing liquid supply pipe 23 Heater 24 valves 25 Processing liquid supply source 30 Rinse liquid supply unit 31 Rinse solution nozzle 31a Discharge port 32 Rinse liquid supply pipe 33 valves 34. Rinse solution supply source 40. Recovery Section 41 The First Cup 41a Skirt section 42 The Second Cup 43 Lifting mechanism 44 First liquid receiving section 44a Drain port 45 Second liquid receiving section 45a Drain port 46 Partition Wall 50 Heating section 51 Light-emitting element 52 Support part 52a Top plate 53 Transparent window 60 Lifting mechanism 61 Arm 62 Pillar 70 Control device 121 Bass 122 Guide 123 pins

Claims

1. A rotating holding unit that rotates the substrate held by the holding member, A processing liquid supply unit that supplies processing liquid to the upper surface of the rotating substrate, A heating unit that irradiates heating light from above the upper surface of the substrate, It has, The substrate processing apparatus is characterized in that at least the portion of the holding member that is in contact with the substrate transmits the light.

2. The substrate processing apparatus according to claim 1, characterized in that the entire holding member transmits the light.

3. The substrate processing apparatus according to claim 1, characterized in that the light-transmitting portion of the holding member is made of PCTFE.

4. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that the heating unit has a transparent window larger than or equal to the size of the substrate, and irradiates the substrate with light through the transparent window.

5. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that the heating unit has a plurality of LEDs as a light source.

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