Method and apparatus for transferring this element

Abstract

The present invention provides an element transfer method that enables the transfer of elements while suppressing their rotation. [Solution] This semiconductor chip transfer method (device transfer method) includes a step of irradiating a support substrate 10 that supports a rectangular semiconductor chip 1 via an adhesive layer 2 with laser light L from the surface 10b opposite to the surface 10a that supports the semiconductor chip 1 on the support substrate 10. The step of irradiating with laser light L includes a step of adjusting the spot shape of the laser light L and irradiating so that the blister B formed by the irradiation of the adhesive layer 2 by the laser light L is shaped along the first side 1a of the rectangular semiconductor chip 1, and a step of sequentially irradiating the laser light L multiple times in a direction along the second side 1b that intersects the first side 1a of the rectangular semiconductor chip 1.

Description

Technical Field

[0001] The present invention relates to an element transfer method and an element transfer apparatus that irradiate a laser beam toward a support substrate that supports an element via an adhesive layer. Background Art

[0002] Conventionally, an element transfer apparatus that irradiates a laser beam toward a support substrate that supports an element via an adhesive layer is known (see, for example, Patent Document 1).

[0003] The above Patent Document 1 discloses a laser transfer apparatus that transfers a rectangular-shaped article attached to one substrate to another substrate. In the above Patent Document 1, an adhesive layer is provided between the substrate and the article, and the article is held by the adhesive layer. Then, in the above Patent Document 1, a laser beam is irradiated from the upper surface side of the substrate toward the adhesive layer, so that the adhesive layer swells in a downward convex shape. As a result, the article is peeled from the adhesive layer and transferred to another substrate. Prior Art Documents Patent Documents

[0004] Patent Document 1 Japanese National Publication of International Patent Application No. 2014-515883 Summary of the Invention Problems to be Solved by the Invention

[0005] In conventional laser transfer apparatuses like the one described in Patent Document 1 above, if the spot area of ​​the laser beam is relatively small relative to the object, the laser beam may be irradiated multiple times onto a single object. In this case, for example, if the laser beam is first irradiated onto a corner of a rectangular object, a bulge (blister) in the adhesive layer may occur, causing the corner of the object to peel off. In this case, a force that causes the object to rotate may be applied from the blister to the object, causing the object to rotate. Therefore, there is a problem in that the object rotates from the state in which it was held by the adhesive layer and is transferred to the substrate (transfer substrate).

[0006] This invention was made to solve the above-mentioned problems, and one of its objectives is to provide an element transfer method and an element transfer apparatus that can transfer elements while suppressing element rotation. [Means for solving the problem]

[0007] To achieve the above objective, this first surface-based element transfer method includes a step of irradiating a support substrate, which supports a rectangular element via an adhesive layer, with laser light from the side of the support substrate opposite to the side that supports the element, wherein the step of irradiating with laser light includes a step of adjusting the spot shape of the laser light and irradiating so that the blister formed by the irradiation of the adhesive layer with the laser light is shaped along the first side of the rectangular element, and a step of sequentially irradiating the laser light with the adjusted spot shape multiple times in a direction along the second side that intersects the first side of the rectangular element.

[0008] As described above, the first method of transferring an element using this first phase includes the step of irradiating with laser light, which involves adjusting the spot shape of the laser light so that the blister formed by the irradiation of the adhesive layer with the laser light is shaped along the first edge of the rectangular element, and the step of sequentially irradiating the laser light with the adjusted spot shape multiple times in the direction along the second edge that intersects the first edge of the rectangular element. As a result, the blister is shaped along the first edge of the rectangular element, and a force is applied that peels the element away from the blister in the direction along the second edge that intersects the first edge. In this case, unlike when a blister is generated so that it peels away from the corner of the element, it becomes difficult for a force to rotate the element from the blister to be applied. As a result, the element can be transferred while suppressing the rotation of the element.

[0009] This second method for transferring an element comprises the step of irradiating a support substrate, which supports a rectangular element via an adhesive layer, with laser light from the side of the support substrate opposite to the side that supports the element, wherein the step of irradiating with laser light includes the step of adjusting the spot shape of the laser light so that ablation, in which the adhesive layer is removed when the laser light is irradiated onto the adhesive layer, occurs along the first side of the rectangular element, and the step of sequentially irradiating the laser light with the adjusted spot shape multiple times in a direction along the second side that intersects the first side of the rectangular element.

[0010] As described above, the second method for transferring elements includes the step of irradiating with laser light, which involves adjusting the spot shape of the laser beam so that ablation, in which the adhesive layer is removed by the irradiation of the adhesive layer, occurs along the first edge of the rectangular element, and the step of sequentially irradiating the element with the laser beam with the adjusted spot shape multiple times in a direction along the second edge that intersects the first edge of the rectangular element. As a result, ablation, in which the adhesive layer is removed, occurs along the first edge of the rectangular element, and a force is applied that peels the element in the direction along the second edge that intersects the first edge. In this case, unlike when ablation occurs to peel from the corners of the element, a force that rotates the element is less likely to be applied. As a result, the element can be transferred while suppressing the rotation of the element.

[0011] In the element transfer method according to the first and second aspects described above, preferably, the method includes a step of irradiating the adhesive layer with laser light whose irradiation energy distribution in the direction along the first edge is adjusted so that the element is transferred along a predetermined direction while deforming as the laser light irradiates the adhesive layer. When the peeling force is applied unevenly to the element, the direction in which the element is transferred may not be stable, and the element may be transferred along a direction different from the predetermined direction. Taking this into consideration, in the above invention, laser light with an adjusted distribution of irradiation energy along the first edge is irradiated so that the element is deformed and transferred along the predetermined direction. With this configuration, when the element is deformed to bend, the force can be dispersed along the curved surface by irradiating it with laser light with an adjusted distribution of irradiation energy along the first edge, thereby suppressing uneven peeling force on the element. As a result, when the element is transferred, the peeling force can be applied more uniformly to the element, and the transfer of the element along a direction different from the predetermined direction can be further suppressed.

[0012] In the first surface transfer method described above, preferably, the step of irradiating with laser light includes adjusting the spot shape of the laser light so that the length of the blister is greater than or equal to the length of the element in the direction along the first edge. With this configuration, the element is uniformly peeled off (extruded) by the blister in the direction along the first edge, so that deformation of the element can be suppressed.

[0013] In the second aspect transfer method described above, preferably, the step of irradiating with laser light includes adjusting the spot shape of the laser light and irradiating so that the length of the ablation in the direction along the first edge is greater than or equal to the length of the element. With this configuration, the element is uniformly peeled off by ablation in the direction along the first edge, so that deformation of the element can be suppressed.

[0014] In the element transfer method according to the first and second surfaces described above, preferably, the step of adjusting the spot shape of the laser beam and irradiating it includes the step of adjusting the spot shape of the laser beam by passing the laser beam irradiated from the laser beam irradiation unit through an opening provided in the mask so that the laser beam takes on a shape along the first edge. With this configuration, the spot shape of the laser beam can be easily adjusted by the mask so that the laser beam takes on a shape along the first edge.

[0015] In the element transfer method according to the first and second surfaces described above, preferably, the step of adjusting the spot shape of the laser beam and irradiating it includes shaping the laser beam irradiated from the laser beam irradiation unit into a plurality of dot-shaped laser beams arranged in the direction along the first edge and irradiating it. With this configuration, when forming a blister with laser beam, a blister having a shape along the first edge of the rectangular element can be easily generated by the plurality of dot-shaped laser beams, and when generating ablation with laser beam, ablation can be easily generated along the first edge of the rectangular element by the plurality of dot-shaped laser beams.

[0016] This third-phase element transfer apparatus comprises a support substrate holding unit that holds a support substrate that supports a rectangular-shaped element via an adhesive layer, and a laser beam irradiation unit that irradiates laser light toward the support substrate from the side of the support substrate opposite to the side that supports the element. The laser beam spot shape is adjusted so that the blister formed by the irradiation of the adhesive layer by the laser beam is shaped along the first side of the rectangular-shaped element, and the laser beam with the adjusted spot shape is sequentially irradiated multiple times in a direction along the second side that intersects the first side of the rectangular-shaped element.

[0017] In this third-phase element transfer apparatus, as described above, the spot shape of the laser beam is adjusted so that the blister formed by the irradiation of the adhesive layer with laser light follows the shape of the first edge of the rectangular element. The laser beam with the adjusted spot shape is sequentially irradiated multiple times in the direction along the second edge that intersects the first edge of the rectangular element. As a result, the blister follows the shape of the first edge of the rectangular element, and a force is applied that peels the element away from the blister in the direction along the second edge that intersects the first edge. In this case, unlike when the blister is formed to peel away from the corners of the element, it is difficult for a force to rotate the element from the blister to be applied. As a result, an element transfer apparatus is provided that can transfer the element while suppressing its rotation.

[0018] This fourth-phase element transfer apparatus comprises a support substrate holding unit that holds a support substrate that supports a rectangular-shaped element via an adhesive layer, and a laser beam irradiation unit that irradiates laser light toward the support substrate from the side opposite to the side of the support substrate that supports the element. The laser beam spot shape is adjusted so that when the laser beam is irradiated onto the adhesive layer, ablation, which removes the adhesive layer, occurs along the first side of the rectangular-shaped element, and the laser beam with the adjusted spot shape is sequentially irradiated multiple times in a direction along the second side that intersects the first side of the rectangular-shaped element.

[0019] According to the fourth aspect, the element transfer apparatus has the spot shape of laser light adjusted such that ablation for removing the adhesive layer occurs along the first side of the rectangular element when the adhesive layer is irradiated with the laser light as described above, and is configured to sequentially irradiate the laser light with the adjusted spot shape a plurality of times in a direction along the second side intersecting the first side of the rectangular element. Accordingly, since ablation that removes the adhesive layer occurs along the first side of the rectangular element, a force that peels the element in the direction along the second side intersecting the first side is applied by the ablation. In this case, unlike a case where ablation occurs to peel the element from a corner portion of the element, a force that rotates the element is less likely to be applied. As a result, an element transfer apparatus capable of transferring an element while suppressing rotation of the element can be provided. [Effects of the Invention]

[0020] As described above, the element transfer method and element transfer apparatus of the present invention can transfer an element while suppressing rotation of the element. [Brief Description of Drawings]

[0021] [Figure 1] It is a schematic diagram showing the overall configuration of the semiconductor chip transfer apparatus according to the first embodiment. [Figure 2] It is a schematic diagram showing a configuration in which the semiconductor chip according to the first embodiment is supported by a supporting substrate. [Figure 3] It is a diagram showing laser light irradiated onto an adhesive layer that supports the semiconductor chip according to the first embodiment. [Figure 4] It is a diagram showing blisters generated in the adhesive layer that supports the semiconductor chip according to the first embodiment, and the semiconductor chip transferred by the blisters. [Figure 5] It is a view of the irradiated laser light and blisters generated by the irradiated laser light according to the first embodiment as seen from above (in the Z1 direction). [Figure 6] It is a flowchart for explaining processing of the semiconductor chip transfer method according to the first to fourth embodiments. [Figure 7] It is a diagram of blisters occurring in the adhesive layer according to the first embodiment, viewed from the X2 direction. [Figure 8] It is a diagram of irradiated laser light and blisters generated by the irradiated laser light according to a comparative example, viewed from above (Z1 direction). [Figure 9] It is a diagram of blisters occurring in the adhesive layer according to a comparative example, viewed from the X2 direction. [Figure 10] It is a schematic diagram showing the overall configuration of a semiconductor chip transfer apparatus according to the second embodiment. [Figure 11] It is a diagram of irradiated laser light and blisters generated by the irradiated laser light according to the second embodiment, viewed from above (Z1 direction). [Figure 12] It is a diagram showing laser light irradiated onto an adhesive layer that supports a semiconductor chip according to the third embodiment. [Figure 13] It is a diagram of irradiated laser light and ablation generated by the irradiated laser light according to the third embodiment, viewed from above (Z1 direction). [Figure 14] It is a schematic diagram showing the overall configuration of a semiconductor chip transfer apparatus according to the fourth embodiment. [Figure 15] It is a diagram showing a semiconductor chip deformed to protrude downward according to the fourth embodiment. (a) It is a diagram of the downward-protruding deformed semiconductor chip viewed from the X2 direction. (b) It is a diagram showing the distribution of irradiation energy E1 in the direction along the first side 1a in FIG. 15(a). [Figure 16] It is a diagram showing a semiconductor chip deformed to protrude upward according to the fourth embodiment. (a) It is a diagram of the upward-protruding deformed semiconductor chip viewed from the X2 direction. (b) It is a diagram showing the distribution of irradiation energy E2 in the direction along the first side 1a in FIG. 16(a). [Figure 17] It is a diagram of blisters occurring in an adhesive layer according to a modified example, viewed from the X2 direction. MODE FOR CARRYING OUT THE INVENTION

[0022] The following describes embodiments of the present invention based on the drawings.

[0023] [First Embodiment] The configuration of the semiconductor chip transfer apparatus 100 according to the first embodiment will now be described. Note that the semiconductor chip transfer apparatus 100 is an example of the "device transfer apparatus" in the claims.

[0024] (Semiconductor chip transfer equipment) As shown in Figure 1, the semiconductor chip transfer apparatus 100 is configured to transfer a semiconductor chip 1 supported on a support substrate 10 to a transfer substrate 20 by a laser lift-off method.

[0025] The semiconductor chip transfer apparatus 100 comprises a support substrate holding section 30, a substrate to be transferred holding section 40, a moving mechanism 50, a control section 60, and a laser beam irradiation section 70. In the drawings, the left-right direction of the semiconductor chip transfer apparatus 100 is defined as the X direction. One side of the X direction is defined as the X1 direction, and the other side as the X2 direction. The up-down direction (vertical direction) of the semiconductor chip transfer apparatus 100 is defined as the Z direction. The upward direction is defined as the Z1 direction, and the downward direction is defined as the Z2 direction. The direction perpendicular to the X and Z directions of the semiconductor chip transfer apparatus 100 is defined as the Y direction. One side of the Y direction is defined as the Y1 direction, and the other side as the Y2 direction.

[0026] As shown in Figure 2, the semiconductor chip 1 is a thin, rectangular element with sides of approximately several hundred micrometers to several tens of millimeters, such as a memory chip. However, the semiconductor chip 1 is not limited to thin elements like memory chips; various semiconductor elements may be used. Furthermore, the semiconductor chip 1 is an example of the "element" in the claims.

[0027] As shown in Figure 3, the support substrate 10 is formed from a material that transmits laser light L, such as an SiO2 (silicon dioxide) substrate or a sapphire substrate. The support substrate 10 supports the semiconductor chip 1 via an adhesive layer 2. The support substrate 10 also supports multiple semiconductor chips 1 via the adhesive layer 2. The adhesive layer 2 is also called a transfer material.

[0028] The adhesive layer 2 is positioned on the Z2-side surface 10a of the support substrate 10. Multiple semiconductor chips 1 are held by the Z2-side surface 2a of the adhesive layer 2. The adhesive layer 2 also supports the Z1-side surface of the semiconductor chips 1.

[0029] As shown in Figure 2, multiple semiconductor chips 1 are arranged in a matrix at predetermined intervals on a support substrate 10 via an adhesive layer 2. The support substrate 10 has, for example, a circular shape. The adhesive layer 2 is made of a material that decomposes and generates gas components when irradiated with laser light L from a laser light irradiation unit 70. By generating gas components, the adhesive layer 2 deforms into a convex shape that protrudes toward the Z2 side (see Figure 4). The deformed convex portion of the adhesive layer 2 is called a blister B. For example, polyimide or silicon can be used as the adhesive layer 2.

[0030] As shown in Figure 3, the support substrate holder 30 holds a support substrate 10 that supports a rectangular semiconductor chip 1 via an adhesive layer 2. The support substrate holder 30 holds the support substrate 10 supporting the semiconductor chip 1 with the surface 10a supporting the semiconductor chip 1 facing downwards. The support substrate holder 30 has an opening 31. Laser light L emitted from the laser light irradiation unit 70 is irradiated onto the support substrate 10 held by the support substrate holder 30 through the opening 31. The support substrate holder 30 is configured to be movable relative to the transfer substrate holder 40 in at least the X and Y directions by a moving mechanism 50 (see Figure 1).

[0031] As shown in Figure 4, the transfer substrate 20 is a substrate for manufacturing semiconductor products by transferring, for example, a large number of semiconductor chips 1 from a support substrate 10 onto the transfer substrate 20. The transfer substrate 20 has an adhesive layer 21 formed thereon for bonding the transferred semiconductor chips 1. The adhesive layer 21 is also called a catch layer. The transfer substrate 20 may also have wiring formed thereon that can be electrically connected to the transferred semiconductor chips 1. The transfer substrate 20 has, for example, a rectangular shape.

[0032] The substrate to be transferred holding portion 40 holds the substrate to be transferred 20, onto which the semiconductor chip 1 supported on the support substrate 10 is transferred, from below (Z2 side). The substrate to be transferred holding portion 40 is configured to be movable relative to the support substrate holding portion 30 in at least the X and Y directions by a moving mechanism 50 (see Figure 1). The moving mechanism 50 may be provided separately for the support substrate holding portion 30 and the substrate to be transferred holding portion 40. By moving either or both of the support substrate holding portion 30 and the substrate to be transferred holding portion 40 by the moving mechanism 50, it is possible to adjust the relative position of the semiconductor chip 1 placed in the support substrate 10 with respect to the substrate to be transferred 20.

[0033] As shown in Figure 1, the laser beam irradiation unit 70 includes a laser beam irradiation unit 71, a galvanometer mirror 72, and an fθ lens 73. The laser beam irradiation unit 71 is a light source that emits laser light L. The galvanometer mirror 72 is rotatable about two intersecting axes and reflects the laser light L at any angle. The fθ lens 73 focuses the laser light L from the galvanometer mirror 72 onto the transfer area of ​​the support substrate 10.

[0034] Furthermore, a mask 74 is provided between the laser beam irradiation unit 71 and the galvanometer mirror 72. By adjusting the size and shape of the opening 74a of the mask 74, the spot shape (spot region SA) of the laser beam L is adjusted. The spot region SA refers to the area of ​​the focal point when the laser beam L is focused.

[0035] As shown in Figure 1, the laser beam irradiation unit 70 irradiates the surface 10b of the support substrate 10 held by the support substrate holding unit 30 with laser light L via the galvanometer mirror 72 and the fθ lens 73, on the surface 10a (see Figure 3) opposite to the surface 10a supporting the semiconductor chip 1. The laser light L is irradiated onto the selected semiconductor chip 1 by the mask 74, the galvanometer mirror 72, and the fθ lens 73. As shown in Figure 4, when the laser light L is irradiated onto the adhesive layer 2 via the support substrate 10, a blister B is generated in the adhesive layer 2, the semiconductor chip 1 is peeled off from the support substrate 10, and the semiconductor chip 1 is transferred from the support substrate 10 to the transfer substrate 20.

[0036] In the first embodiment, as shown in Figure 5, the spot shape (spot region SA) of the laser beam L is adjusted so that the blister B formed by irradiating the adhesive layer 2 with the laser beam L is shaped along the first side 1a of the rectangular semiconductor chip 1. The semiconductor chip transfer apparatus 100 is configured to sequentially irradiate the laser beam L with the adjusted spot shape multiple times in the direction (X direction) along the second side 1b that intersects the first side 1a of the rectangular semiconductor chip 1. Details of adjusting the spot shape of the laser beam L will be described later.

[0037] As shown in Figure 1, the control unit 60 is composed of a processor such as a CPU (Central Processing Unit) and performs various controls by executing a program (software). The control unit 60 arbitrarily selects a semiconductor chip 1 within the transfer area and controls the transfer of the selected semiconductor chip 1 to the transfer substrate 20 by irradiating the laser beam irradiation unit 70 with laser beam L. The control unit 60 also controls the operation of the moving mechanism 50.

[0038] (Semiconductor chip transfer method) Next, with reference to Figure 6, a semiconductor chip transfer method according to the first embodiment will be described. Note that the semiconductor chip transfer method is an example of an element transfer method within the scope of the claims.

[0039] In step S1, the control unit 60 selects a semiconductor chip 1 to be transferred, which is supported on the support substrate 10. The control unit 60 then controls the moving mechanism 50 so that the selected semiconductor chip 1 is irradiated with laser light L. As a result, the relative positions of the support substrate holding unit 30, the transfer substrate holding unit 40, and the laser light irradiation unit 70 are changed so that the selected semiconductor chip 1 is irradiated with laser light L.

[0040] Next, in step S2, the control unit 60 controls the laser light irradiation unit 71. This performs the process of irradiating the support substrate 10, on which the semiconductor chip 1 is supported via the adhesive layer 2, with laser light L irradiated from the surface 10b opposite to the surface 10a that supports the semiconductor chip 1.

[0041] In the first embodiment, as shown in Figure 5, the step of irradiating with laser light L includes adjusting the spot shape (spot region SA) of the laser light L and irradiating so that the blister B formed by the irradiation of the adhesive layer 2 with the laser light L is shaped along the first side 1a of the rectangular semiconductor chip 1. Here, the first side 1a is the short side of the rectangular semiconductor chip 1. The shape along the first side 1a of the semiconductor chip 1 is, for example, an oval shape (or a rectangular shape with its long side oriented in the Y direction) whose long axis is aligned with the Y direction, which is the direction along the first side 1a. Note that in Figure 5, the spot shape (spot region SA) of the laser light L and the blister B are depicted as having the same shape.

[0042] Furthermore, in the first embodiment, the step of irradiating with laser light L includes adjusting the spot shape of the laser light L so that the length L1 of the blister B is greater than or equal to the length L2 of the semiconductor chip 1 in the direction along the first side 1a. In Figure 5, the blister B is formed to protrude in both the Y1 and Y2 directions of the semiconductor chip 1 when viewed from the Z direction. The amount of protrusion of the blister B is large enough to uniformly push out the semiconductor chip 1 along the Y direction, as shown in Figure 7.

[0043] Furthermore, in the first embodiment, the step of adjusting the spot shape of the laser beam L and irradiating it includes the step of adjusting the spot shape of the laser beam L so that the laser beam L irradiated from the laser beam irradiation unit 71 passes through an opening 74a provided in the mask 74 (see Figure 1) so that the laser beam L takes on a shape along the first side 1a. That is, by making the opening 74a of the mask 74 oval or rectangular in shape, the spot shape of the laser beam L takes on a shape along the first side 1a. Also, the number of openings 74a in the mask 74 is, for example, one.

[0044] Furthermore, in the first embodiment, the step of irradiating with laser light L includes the step of sequentially irradiating the rectangular semiconductor chip 1 with laser light L multiple times in the direction (X direction) along the second side 1b that intersects the first side 1a. In the first embodiment, the first side 1a and the second side 1b are orthogonal. Also, for example, the control unit 60 rotates the galvanometer mirror 72 so that the spot shape of the laser light L is adjusted and sequentially irradiated multiple times in the direction (X direction) along the second side 1b of the semiconductor chip 1. Also, the spot regions SA of the sequentially irradiated laser light L are, for example, spaced apart from each other. Also, for example, the distance between the spot regions SA in the X direction is constant. As the laser light L is sequentially irradiated multiple times, a blister B (see Figures 4, 5 and 7) is generated in the adhesive layer 2, and the semiconductor chip 1 to be transferred is transferred to the transfer substrate holding part 40.

[0045] Here, as in the comparative example shown in Figure 8, when a laser beam L having a rectangular spot region SA is first irradiated onto the corner of a rectangular semiconductor chip 1, a blister B is generated to peel off the corner of the semiconductor chip 1. In this case, as shown in Figure 9, the semiconductor chip 1 tilts with respect to the XY plane. Also, as shown in Figure 8, a force (see arrow in Figure 8) is applied from the blister B to rotate the semiconductor chip 1. In this case, before the entire semiconductor chip 1 peels off, the left portion of the semiconductor chip 1 (the portion indicated by the dashed line) hangs down towards the support substrate 10, and the left end of the portion indicated by the dashed line (the portion indicated by hatching in Figure 8) adheres to the support substrate 10. Therefore, the peeling progresses with the semiconductor chip 1 tilted in the direction of the arrow in Figure 8. As a result, the semiconductor chip 1 is transferred in a rotated state. On the other hand, as shown in Figures 5 and 7, in the first embodiment, the blister B (spot region SA) is formed to have a shape along the first edge 1a of the semiconductor chip 1, so that a uniform force is applied from the blister B to the semiconductor chip 1 from the Y1 side to the Y2 side. In this case, it is difficult for a force to rotate the semiconductor chip 1 from the blister B, and a force is applied that peels the semiconductor chip 1 along the X direction. Therefore, the semiconductor chip 1 is transferred without rotating, while maintaining the orientation held by the adhesive layer 2. Also, as shown in Figure 7, in the direction along the first edge 1a of the semiconductor chip 1, the length L1 of the blister B (laser beam L) is greater than or equal to the length L2 of the semiconductor chip 1, so that a uniform force is applied from the blister B to the semiconductor chip 1 from the Y1 side to the Y2 side. Therefore, the semiconductor chip 1 does not curve even when viewed from the X direction.

[0046] Next, in step S3, the control unit 60 determines whether the entire semiconductor chip 1 to be transferred has been transferred. If the answer in step S3 is yes, the semiconductor chip transfer method flow ends. If the answer in step S3 is no, the process returns to step S1.

[0047] (Effects of the first embodiment) Next, the effects of the first embodiment will be described.

[0048] In the first embodiment, as described above, the step of irradiating with laser light L includes the steps of adjusting the spot shape of the laser light L and irradiating so that the blister B formed by the irradiation of the adhesive layer 2 with the laser light L is shaped along the first side 1a of the rectangular semiconductor chip 1, and sequentially irradiating the laser light L with the adjusted spot shape multiple times in the direction (X direction) along the second side 1b that intersects the first side 1a of the rectangular semiconductor chip 1. As a result, the blister B is shaped along the first side 1a of the rectangular semiconductor chip 1, and a force is applied from the blister B in the direction (X direction) along the second side 1b that intersects the first side 1a to peel off the semiconductor chip 1. In this case, unlike when the blister B is generated so as to peel off from the corner of the semiconductor chip 1, it becomes difficult for a force to rotate the semiconductor chip 1 from the blister B to be applied. As a result, the semiconductor chip 1 can be transferred while suppressing the rotation of the semiconductor chip 1.

[0049] In the first embodiment, as described above, the step of irradiating with laser light L includes adjusting the spot shape of the laser light L so that the length L1 of the blister B in the direction along the first edge 1a (Y direction) is equal to or greater than the length L2 of the semiconductor chip 1. As a result, the semiconductor chip 1 is uniformly peeled off (extruded) by the blister B in the direction along the first edge 1a (Y direction), thereby suppressing deformation of the semiconductor chip 1.

[0050] In the first embodiment, as described above, the step of adjusting the spot shape of the laser beam L and irradiating it includes the step of adjusting the spot shape of the laser beam L so that the laser beam L irradiated from the laser beam irradiation unit 70 passes through the opening 74a provided in the mask 74, so that the laser beam L takes on a shape along the first side 1a. This makes it possible to easily adjust the spot shape of the laser beam L so that the laser beam L takes on a shape along the first side 1a using the mask 74.

[0051] [Second Embodiment] The configuration of the semiconductor chip transfer apparatus 100a according to the second embodiment will now be described. Note that the semiconductor chip transfer apparatus 100a is an example of the "device transfer apparatus" in the claims.

[0052] (Semiconductor chip transfer equipment) As shown in Figure 10, the semiconductor chip transfer apparatus 100a differs from the semiconductor chip transfer apparatus 100 of the first embodiment in that it is equipped with a GLV (Grating Light Valve) 80 instead of a mask 74. The GLV 80 shapes the laser light L emitted from the laser light irradiation unit 71 into a plurality of dot-shaped laser beams La. The GLV 80 is a spatial light modulator that forms thousands of fine structures of silicon nitride film called "ribbons" on a silicon chip. By electrically controlling the deflection of the ribbons, the GLV 80 functions as a diffraction grating. Also, as shown in Figure 11, the plurality of dot-shaped laser beams La are formed along the first edge 1a of the semiconductor chip 1. The GLV 80 is controlled by the control unit 60. The other configurations of the semiconductor chip transfer apparatus 100a are the same as those of the semiconductor chip transfer apparatus 100 of the first embodiment.

[0053] (Method for transferring semiconductor chip data) Next, with reference to Figure 6, a method for transferring the semiconductor chip 1 according to the second embodiment will be described.

[0054] The operation of step S1 is the same as the method for transferring the semiconductor chip 1 according to the first embodiment described above, so a description will be omitted.

[0055] In step S2a, the control unit 60 controls the laser beam irradiation unit 71. This performs the step of irradiating the support substrate 10 with laser beam L from the side 10b opposite to the side 10a that supports the semiconductor chip 1. In the second embodiment, as shown in Figure 11, the step of adjusting the spot shape of the laser beam L and irradiating includes shaping the laser beam L irradiated from the laser beam irradiation unit 71 into a plurality of dot-shaped laser beams La arranged in the direction along the first side 1a (Y direction) and irradiating them. For example, the plurality of dot-shaped laser beams La are irradiated so as to extend from the Y1 side end to the Y2 side end of the semiconductor chip 1. Although four dot-shaped laser beams La are shown in Figure 11, the number of laser beams La is not limited to four. Furthermore, in Figure 11, when viewed from the Z direction, the laser beams La located at the edges of the multiple dot-shaped laser beams La are irradiated so that they overlap the second edge 1b. However, for example, the laser beams La located at the edges of the multiple laser beams La may be irradiated inward from the second edge 1b.

[0056] In the second embodiment as well, the step of irradiating with laser light L includes adjusting the spot shape (spot region SA) of the laser light L so that the blister B formed by the irradiation of the adhesive layer 2 with the laser light L is shaped along the first side 1a of the rectangular semiconductor chip 1. That is, the blister B formed by a plurality of dot-shaped laser beams La arranged in the direction along the first side 1a (Y direction) is shaped along the first side 1a of the rectangular semiconductor chip 1.

[0057] The operation of step S3 is the same as the method for transferring the semiconductor chip 1 according to the first embodiment described above, so a description will be omitted.

[0058] (Effects of the second embodiment) Next, the effects of the second embodiment will be described.

[0059] In the second embodiment, as described above, the step of adjusting the spot shape of the laser beam L and irradiating it includes shaping the laser beam L irradiated from the laser beam irradiation unit 70 into a plurality of dot-shaped laser beams La arranged in the direction along the first side 1a (Y direction) and irradiating it. As a result, a blister B having a shape along the first side 1a of the rectangular semiconductor chip 1 can be easily generated by the plurality of dot-shaped laser beams La.

[0060] [Third Embodiment] Next, with reference to Figures 12 and 13, a semiconductor chip transfer apparatus 100 according to the third embodiment will be described. In the third embodiment, unlike the first embodiment in which a blister B is formed in the adhesive layer 2 of the support substrate 10 by laser light L, ablation A is generated in the adhesive layer 302 of the support substrate 310 by laser light L. The configuration of the semiconductor chip transfer apparatus 100 is the same as that of the semiconductor chip transfer apparatus 100 of the first embodiment described above, so a description will be omitted.

[0061] As shown in Figure 12, the semiconductor chip transfer apparatus 100 transfers the semiconductor chip 1, supported on the support substrate 310, to the substrate 20. An adhesive layer 302 is placed on the Z2-side surface 310a of the support substrate 310. Multiple semiconductor chips 1 are held by the Z2-side surface 302a of the adhesive layer 302. The adhesive layer 302 also supports the Z1-side surface of the semiconductor chip 1.

[0062] The adhesive layer 302 is formed of a material that is removed by irradiation with laser light L from the laser light irradiation unit 70. The material forming the adhesive layer 302 is removed, for example, by evaporation caused by the irradiated laser light L. The evaporation of the adhesive layer 302 occurs instantaneously. As the adhesive layer 302 evaporates, the semiconductor chip 1 is peeled off from the support substrate 10 and, biased by the expansion accompanying the evaporation of the adhesive layer 302, is transferred to the transfer substrate 20. Ablation A is the portion where the adhesive layer 302 has been removed by irradiation with laser light L. As the material forming the adhesive layer 302, for example, polyimide or PMMA (polymethyl methacrylate) can be used.

[0063] In this third embodiment, as shown in Figure 13, the spot shape (spot region SA) of the laser beam L is adjusted so that the ablation A generated by irradiating the adhesive layer 302 with the laser beam L takes on a shape along the first side 1a of the rectangular semiconductor chip 1.

[0064] (Semiconductor chip transfer method) Next, with reference to Figure 6, a method for transferring the semiconductor chip 1 according to the third embodiment will be described. Note that the semiconductor chip transfer method is an example of an element transfer method within the scope of the claims.

[0065] In step S1, as in the first and second embodiments, the control unit 60 selects the semiconductor chip 1 to be transferred, which is supported on the support substrate 10.

[0066] Next, in this third embodiment, in step S2b, similar to steps S2 and S2a of the first and second embodiments, the control unit 60 controls the laser beam irradiation unit 71. This performs the process of irradiating the support substrate 310 with laser beam L irradiated from the surface 310b of the support substrate 310 opposite to the surface 310a that supports the semiconductor chip 1.

[0067] In the third embodiment, as shown in Figure 13, the step of irradiating with laser light L includes adjusting the spot shape (spot region SA) of the laser light L and irradiating so that ablation A, in which the adhesive layer 302 is removed when the laser light L is irradiated onto the adhesive layer 302, occurs along the first side 1a of the rectangular semiconductor chip 1. Note that in Figure 13, the area where ablation A occurs is shown as having the same shape as the spot shape (spot region SA) of the laser light L.

[0068] Furthermore, in the third embodiment, the step of irradiating with laser light L includes adjusting the spot shape of the laser light L so that the length L1 of the ablation A in the direction along the first side 1a (Y direction) is equal to or greater than the length L2 of the semiconductor chip 1. In Figure 5, the ablation A is formed to protrude in both the Y1 direction and the Y2 direction of the semiconductor chip 1 when viewed from the Z direction. The amount of ablation A protrusion is large enough to uniformly peel off the semiconductor chip 1 along the Y direction, as shown in Figure 7.

[0069] Furthermore, in the third embodiment, similar to the first embodiment, the step of adjusting the spot shape of the laser beam L and irradiating it includes the step of adjusting the spot shape of the laser beam L so that the laser beam L irradiated from the laser beam irradiation unit 71 passes through an opening 74a provided in the mask 74 (see Figure 1) so that the laser beam L takes on a shape along the first side 1a.

[0070] In the third embodiment, the step of irradiating with laser light L includes the step of sequentially irradiating the rectangular semiconductor chip 1 with laser light L multiple times in the direction (X direction) along the second side 1b that intersects the first side 1a. For example, the control unit 60 rotates the galvanometer mirror 72 so that the spot shape of the laser light L is adjusted and sequentially irradiated multiple times in the direction (X direction) along the second side 1b of the semiconductor chip 1. The spot regions SA of the sequentially irradiated laser light L are, for example, spaced apart from each other. Also, for example, the distance between the spot regions SA in the X direction is constant. Then, as the laser light L is sequentially irradiated multiple times, ablation A (see Figures 12 and 13) occurs in the adhesive layer 302, and the semiconductor chip 1 to be transferred is transferred to the transfer substrate holding part 40.

[0071] As shown in Figures 12 and 13, in the third embodiment, ablation A (spot region SA) occurs along the first edge 1a of the semiconductor chip 1, so that a uniform force is applied to the semiconductor chip 1 from the Y1 side to the Y2 side. In this case, a force that would cause the semiconductor chip 1 to rotate from ablation A is unlikely to be applied, and a force that peels off the semiconductor chip 1 along the X direction is applied. Therefore, the semiconductor chip 1 does not rotate and is transferred while maintaining the orientation held by the adhesive layer 302. Also, as shown in Figure 13, in the direction along the first edge 1a of the semiconductor chip 1, the length L1 of ablation A (laser light L) is greater than or equal to the length L2 of the semiconductor chip 1, so that a uniform force is applied to the semiconductor chip 1 in the ablation A portion from the Y1 end to the Y2 end. Therefore, the semiconductor chip 1 does not curve even when viewed from the X direction.

[0072] Next, in step S3, similar to the first and second embodiments, the control unit 60 determines whether all of the semiconductor chip 1 to be transferred has been transferred. If the answer in step S3 is yes, the semiconductor chip transfer method flow ends. If the answer in step S3 is no, the process returns to step S1.

[0073] (Effects of the third embodiment) Next, the effects of the third embodiment will be described.

[0074] In the third embodiment, as described above, the step of irradiating with laser light L includes the step of adjusting the spot shape of the laser light L and irradiating so that ablation A, in which the adhesive layer 302 is removed when the laser light L is irradiated onto the adhesive layer 302, occurs along the first side 1a of the rectangular semiconductor chip 1, and the step of sequentially irradiating the laser light L with the adjusted spot shape multiple times in the direction (X direction) along the second side 1b that intersects the first side 1a of the rectangular semiconductor chip 1. As a result, ablation A, in which the adhesive layer 302 is removed, occurs along the first side 1a of the rectangular semiconductor chip 1, and a force is applied by ablation A that peels off the semiconductor chip 1 in the direction (X direction) along the second side 1b that intersects the first side 1a. In this case, unlike when ablation A occurs to peel off from the corners of the semiconductor chip 1, it is difficult for a force to rotate the semiconductor chip 1 to be applied from ablation A. As a result, the semiconductor chip 1 can be transferred while suppressing the rotation of the semiconductor chip 1.

[0075] In the third embodiment, as described above, the step of irradiating with laser light L includes adjusting the spot shape of the laser light L so that the length L1 of the ablation A in the direction along the first edge 1a (Y direction) is equal to or greater than the length L2 of the semiconductor chip 1. As a result, the semiconductor chip 1 is uniformly peeled off (extruded) by the ablation A in the direction along the first edge 1a (Y direction), so deformation of the semiconductor chip 1 can be suppressed.

[0076] [Fourth Embodiment] The configuration of the semiconductor chip transfer apparatus 100b according to the fourth embodiment will now be described. Note that the semiconductor chip transfer apparatus 100b is an example of the "element transfer apparatus" in the claims. Also, the downward direction (Z2 direction) is an example of the "predetermined direction" in the claims.

[0077] (Semiconductor chip transfer equipment) As shown in Figure 14, the semiconductor chip transfer apparatus 100b differs from the semiconductor chip transfer apparatus 100 of the first embodiment in that it is equipped with a DMD (Digital Mirror Device: registered trademark) 81 instead of a mask 74. The DMD 81 adjusts the spatial distribution of the irradiation energy E (see Figures 15 and 16) of the laser light L irradiated from the laser light irradiation unit 71. The DMD 81 is a device in which a large number of movable minute mirrors are arranged on the substrate of an integrated circuit. Specifically, the DMD 81 adjusts the spatial distribution of the irradiation energy E of the laser light L by changing the ON / OFF timing of each mirror constituting the DMD 81. The DMD 81 is controlled by the control unit 60. The other configurations of the semiconductor chip transfer apparatus 100b are the same as those of the semiconductor chip transfer apparatus 100 of the first embodiment.

[0078] (Method for transferring semiconductor chip data) Next, with reference to Figure 6, a method for transferring the semiconductor chip 1 according to the fourth embodiment will be described.

[0079] The operation of step S1 is the same as the method for transferring the semiconductor chip 1 according to the first to third embodiments described above, so a description will be omitted.

[0080] In step S2c, similar to the first to third embodiments described above, the control unit 60 controls the laser beam irradiation unit 71. This performs the process of irradiating the support substrate 10 with laser light L irradiated from the opposite side of the surface 10b that is opposite to the surface 10a that supports the semiconductor chip 1.

[0081] As shown in Figure 15(a), in the fourth embodiment, the semiconductor chip 1 is deformed by irradiating the adhesive layer 2 with laser light L. The semiconductor chip 1 is deformed into a shape having a convex portion in the vertical direction (Z direction). Specifically, the semiconductor chip 1 is deformed into a shape having one convex portion in the downward direction (Z2 direction). The semiconductor chip 1 is transferred along the Z2 direction while being deformed. The semiconductor chip 1 is deformed by the blister B formed in the adhesive layer 2 to match the shape of the blister B. In other words, the semiconductor chip 1 is transferred while being deformed into a curved shape that is convex downwards. The blister B is deformed into a shape having a convex portion in the vertical direction (Z direction). Specifically, the blister B is deformed into a shape having one convex portion in the downward direction (Z2 direction). In a side view of the semiconductor chip 1 viewed from the direction in which the second side 1b extends (X direction), the blister B is deformed symmetrically with respect to the symmetry axis SX1. The axis of symmetry SX1 passes through the center of the semiconductor chip 1 in the direction in which the first edge 1a extends (Y direction) and extends in the direction in which the semiconductor chip 1 is transferred. The direction in which the semiconductor chip 1 is transferred is the direction from the position where the semiconductor chip 1 is supported on the support substrate 10 to the transfer position on the substrate 20 where the semiconductor chip 1 is transferred. The direction of transfer is, for example, the vertical direction (Z2 direction) drawn downward from the support substrate 10 to the substrate 20. In a side view of the semiconductor chip 1 as seen from the direction in which the second edge 1b extends (X direction), the blister B has a shape that is most convex in the Z2 direction at the center of the semiconductor chip 1 in the direction in which the first edge 1a extends (Y direction).

[0082] The shape of blister B is adjusted, for example, so that the force that peels the semiconductor chip 1 from the support substrate 10 is parallel to the direction in which the semiconductor chip 1 is transferred. Specifically, the shape of blister B is adjusted so that, in a side view of the semiconductor chip 1 as seen from the direction in which the second side 1b extends (X direction), the direction in which the first side 1a extends (Y direction) from the center of the semiconductor chip 1 in the direction in which the first side 1a extends (Y direction) is perpendicular to the direction in which the semiconductor chip 1 is transferred.

[0083] In a side view of semiconductor chip 1, viewed from the direction in which the second side 1b extends (X direction), the semiconductor chip 1 is deformed to a shape that is symmetrical with respect to the axis of symmetry SX1. In a side view of semiconductor chip 1, viewed from the direction in which the second side 1b extends (X direction), the semiconductor chip 1 has a shape that is most convex in the Z2 direction at the center of semiconductor chip 1 in the direction in which the first side 1a extends (Y direction). In a side view of semiconductor chip 1, viewed from the direction in which the second side 1b extends (X direction), the semiconductor chip 1 is deformed so that its cross-section is curved. The curve is, for example, a semicircle, an ellipse, or a parabola.

[0084] Figure 15(b) shows the position Y on the horizontal axis in the direction (Y direction) in which the first side 1a extends, and the distribution of irradiation energy E1 on the vertical axis. As shown in Figure 15(b), the distribution of the irradiation energy E1 of the laser light L is adjusted by the control unit 60 to correspond to the deformation of the blister B. There is a correlation between the irradiation energy E1 and the amount of downward expansion (Z2 direction) of the blister B. The amount of downward expansion (Z2 direction) of the blister B is, for example, the distance between the surface of the blister B and the surface of the support substrate 10 in the downward direction (Z2 direction).

[0085] The irradiation energy E1 is symmetric with respect to the axis of symmetry Y=P1. Position P1 is the position in the Y direction with respect to the axis of symmetry SX1. The irradiation energy E1 is largest at position P1, reaching its maximum value E1max. The amount of downward expansion (Z2 direction) of blister B is also largest at position P1. Between position P1 and position Pa, as position Y becomes smaller than P1 (towards the Y1 direction), the irradiation energy E1 also decreases. As the irradiation energy E1 decreases, the amount of downward expansion (Z2 direction) of blister B also decreases. The irradiation energy E1 is approximately 0 at position Pa. At position Pb, the amount of downward expansion (Z2 direction) of blister B is approximately 0. At position Pb, the irradiation energy E1 is E10. Between position P1 and position Pc, as position Y becomes larger than P1 (towards the Y2 direction), the irradiation energy E1 decreases. As the irradiation energy E1 decreases, the amount of downward expansion (in the Z2 direction) of blister B also decreases. The irradiation energy E is approximately 0 at position Pc. At position Pd, the amount of downward expansion (in the Z2 direction) of blister B is approximately 0. At position Pd, the irradiation energy E1 is E10. Positions Pa and Pc, and positions Pb and Pd are symmetric with respect to the axis of symmetry SX1.

[0086] As shown in Figure 16(a), in the fourth embodiment, blister B may be deformed into a shape having, for example, two convex portions that are convex downward (Z2 direction). In a side view of the semiconductor chip 1 viewed from the direction in which the second side 1b extends (X direction), blister B is deformed into a shape that is line-symmetric with respect to the symmetry axis SX2. The symmetry axis SX2 passes through the center of the semiconductor chip 1 in the direction in which the first side 1a extends (Y direction) and extends in the direction in which the semiconductor chip 1 is transferred (Z2 direction). In a side view of the semiconductor chip 1 viewed from the direction in which the second side 1b extends (X direction), blister B has a shape that is most convex in the Z2 direction along axes SX3 and SX4. The amount of deformation of blister B in the Z2 direction along axes SX3 and SX4 is approximately the same. Axes SX3 and SX4 are line-symmetric with respect to the symmetry axis SX2.

[0087] When blister B deforms into a shape having two convex protrusions in the downward direction (Z2 direction), semiconductor chip 1 deforms into a shape having one convex protrusion in the upward direction (Z1 direction). The two protrusions of blister B are formed on axes SX3 and SX4, respectively. Semiconductor chip 1 is supported by blister B between the two protrusions of blister B.

[0088] Figure 16(b) shows the position Y on the horizontal axis in the direction in which the first side 1a extends (Y direction), and the distribution of irradiation energy E2 on the vertical axis. As shown in Figure 16(b), the distribution of the irradiation energy E2 of the laser light L is adjusted by the control unit 60 to correspond to the deformation of the blister B. In Figure 16(b), as in Figure 15(b), there is a correlation between the irradiation energy E2 and the amount of downward expansion (Z2 direction) of the blister B.

[0089] The irradiation energy E2 is symmetric with respect to the axis of symmetry Y=P2. Position P2 is the position in the direction (Y direction) in which the first side 1a of the axis of symmetry SX2 extends. The irradiation energy E2 shows its largest value E2max at positions P3 and P4. Position P3 is the position in the direction (Y direction) in which the first side 1a of axis SX3 extends. Position P4 is the position in the direction (Y direction) in which the first side 1a of axis SX4 extends. Between positions P3 and P2, as position Y becomes larger than position P3 (towards the Y2 direction), the irradiation energy E2 decreases. Between positions P4 and P2, as position Y becomes smaller than position P4 (towards the Y1 direction), the irradiation energy E2 decreases. As the irradiation energy E2 decreases, the amount of downward expansion (Z2 direction) of blister B also decreases. Between positions P3 and P4, the irradiation energy E2 is greater than 0. Specifically, at position P2, the irradiation energy E2 shows the minimum value E2c between positions P3 and P4. The irradiation energy E2 is approximately 0 at position Pe. At position Pf, the amount of downward expansion (Z2 direction) of blister B is approximately 0. At position Pf, the irradiation energy E2 is E2o. E2o is greater than 0. Between positions P3 and Pe, as position Y becomes smaller than position P3 (towards the Y1 direction), the irradiation energy E2 decreases. As the irradiation energy E2 decreases, the amount of downward expansion (Z2 direction) of blister B also decreases. The irradiation energy E2 is approximately 0 at position Pg. At position Ph, the amount of downward expansion (Z2 direction) of blister B is approximately 0. At position Ph, the irradiation energy E2 is E2o. E2o is greater than 0. Between position P4 and position Pg, as position Y becomes greater than P4 (towards the Y2 direction), the irradiation energy E2 decreases. As the irradiation energy E2 decreases, the amount of downward expansion (Z2 direction) of blister B also decreases. Positions P3 and P4, position Pe and position Pg, and position Pf and position Pg are each symmetric with respect to the axis of symmetry SX1.

[0090] Similar to the first to third embodiments, the step of adjusting the spot shape of the laser beam L and irradiating it includes shaping the laser beam L irradiated from the laser beam irradiation unit 71 into a plurality of dot-shaped laser beams La arranged in the direction along the first side 1a (Y direction) and irradiating them.

[0091] Furthermore, in the fourth embodiment, similar to the first and second embodiments, the step of irradiating with laser light L includes adjusting the spot shape (spot region SA) of the laser light L and irradiating so that the blister B formed by the irradiation of the adhesive layer 2 with the laser light L has a shape along the first side 1a of the rectangular semiconductor chip 1. That is, the blister B formed by a plurality of dot-shaped laser beams La arranged in the direction along the first side 1a (Y direction) has a shape along the first side 1a of the rectangular semiconductor chip 1.

[0092] The operation of step S3 is the same as the method for transferring the semiconductor chip 1 according to the first to third embodiments described above, so a description will be omitted.

[0093] (Effects of the fourth embodiment) Next, the effects of the fourth embodiment will be described.

[0094] In the fourth embodiment, as described above, the laser beam L is irradiated onto the adhesive layer 2, causing the semiconductor chip 1 (element) supported on the support substrate 10 via the adhesive layer 2 to deform, thereby transferring the semiconductor chip 1 along the downward direction (Z2 direction) while deforming it. This includes a step of irradiating the semiconductor chip 1 with a laser beam L whose distribution of irradiation energy E in the direction along the first edge 1a (Y direction) is adjusted. However, if the peeling force is applied unevenly to the semiconductor chip 1, the direction in which the semiconductor chip 1 is transferred may not be stable, and the semiconductor chip 1 may be transferred along a direction different from the predetermined direction. Considering this, in the above invention, a laser beam L whose distribution of irradiation energy E in the direction along the first edge 1a (Y direction) is adjusted is irradiated so that the semiconductor chip 1 is transferred along the downward direction (Z2 direction) while deforming it. As a result, when the semiconductor chip 1 is deformed to bend by irradiating it with a laser beam L whose distribution of irradiation energy E in the direction along the first edge 1a (Y direction) is adjusted, the force can be dispersed along the curved surface, thus suppressing uneven peeling force on the semiconductor chip 1. As a result, when the semiconductor chip 1 is transferred, a more uniform peeling force can be applied to the semiconductor chip 1, thereby further suppressing the transfer of the semiconductor chip 1 along a direction different from the predetermined direction.

[0095] [Differentiation] It should be noted that the embodiments disclosed herein are illustrative and not restrictive in all respects. The scope of the present invention is defined by the claims rather than by the description of the embodiments above, and further includes all modifications (exceptions) within the meaning and scope equivalent to the claims.

[0096] For example, in the first to fourth embodiments described above, an example was shown in which a laser beam L is sequentially irradiated multiple times along the second side 1b that is perpendicular to the first side 1a of the rectangular semiconductor chip 1, but the present invention is not limited thereto. For example, the first side 1a and the second side 1b may intersect at an angle other than 90 degrees, and the laser beam L may be sequentially irradiated multiple times along the second side 1b that intersects the first side 1a at an angle other than 90 degrees.

[0097] Furthermore, while the first to fourth embodiments described above show examples where the spot regions SA of sequentially irradiated laser beams L are spaced apart from each other, the present invention is not limited to this. For example, the spot regions SA of sequentially irradiated laser beams L may overlap.

[0098] Furthermore, while the first to fourth embodiments described above show an example where the spacing between spot regions SA in the X direction is constant, the present invention is not limited to this. The spacing between spot regions SA in the X direction does not have to be constant. For example, the spacing between spot regions SA may increase as one moves toward the X1 direction.

[0099] Furthermore, while the first to fourth embodiments described above show examples where the length L1 of the blister B is greater than or equal to the length L2 of the semiconductor chip 1 in the direction along the first edge 1a of the semiconductor chip 1 (Y direction), the present invention is not limited thereto. For example, as shown in Figure 17, the length L1 of the blister B may be less than the length L2 of the semiconductor chip 1 in the direction along the first edge 1a of the semiconductor chip 1 (Y direction). In this case, since the force applied from the blister B to the semiconductor chip 1 is not uniform, the semiconductor chip 1 may deform if the thickness of the semiconductor chip 1 is small or the rigidity of the semiconductor chip 1 is low. On the other hand, if the thickness of the semiconductor chip 1 is large or the rigidity of the semiconductor chip 1 is high, the semiconductor chip 1 will not deform, so the length L1 of the blister B may be less than the length L2 of the semiconductor chip 1.

[0100] Furthermore, in the first and third embodiments described above, examples were shown in which the spot shape of the laser beam L is adjusted so that the laser beam L, irradiated from the laser beam irradiation unit 71, passes through an opening 74a provided in the mask 74, so that the laser beam L takes on a shape along the first side 1a. However, the present invention is not limited thereto. For example, the spot shape of the laser beam L may be adjusted by a shutter whose opening size can be changed by the control unit 60.

[0101] Furthermore, while the second embodiment described above shows an example in which the laser light L irradiated from the laser light irradiation unit 71 is formed into a plurality of dot-shaped laser beams La by the GLV80, the present invention is not limited thereto. For example, the laser light L irradiated from the laser light irradiation unit 71 may be formed into a plurality of dot-shaped laser beams La by passing through a mask provided with a plurality of holes (openings).

[0102] Furthermore, while the first to fourth embodiments described above show examples where the support substrate 10 is circular and the transfer substrate 20 is rectangular, the present invention is not limited thereto. For example, the shapes of both the support substrate 10 and the transfer substrate 20 may be circular or polygonal.

[0103] Furthermore, in the first to fourth embodiments described above, the laser light irradiation unit 70 was shown to include a laser light irradiation unit 71, a galvanometer mirror 72, and an fθ lens 73, but the present invention is not limited thereto. For example, a polygon mirror may be used instead of the galvanometer mirror 72, or a mask 74 may be used instead of the galvanometer mirror 72 and the fθ lens 73.

[0104] Furthermore, while the first to fourth embodiments described above show examples in which the semiconductor chip 1 is used as the element of the present invention, the present invention is not limited thereto. Elements other than the semiconductor chip 1 may also be used as the element of the present invention.

[0105] Furthermore, although the first to fourth embodiments described above show an example in which the semiconductor chip 1 has a rectangular shape, the present invention is not limited thereto. In the present invention, the semiconductor chip 1 may also have a square shape.

[0106] Furthermore, in the third embodiment described above, an example was shown in which ablation A is generated by irradiating the laser beam L through an opening 74a provided in the mask 74, adjusting the spot shape of the laser beam L so that the laser beam L is shaped along the first side 1a, but the present invention is not limited to this. In the present invention, for example, ablation may be generated by shaping the laser beam into a plurality of dot-shaped laser beams arranged in the direction along the first side and irradiating them.

[0107] Furthermore, although the fourth embodiment described above shows an example in which one or two protrusions are formed in blister B, the present invention is not limited thereto. In the present invention, the distribution of the laser light irradiation energy may be adjusted so that three or more protrusions are formed in blister.

[0108] Furthermore, while the fourth embodiment described above shows an example in which the spatial irradiation energy E of the laser light L emitted from the laser light irradiation unit 71 is adjusted by the DMD 81, the present invention is not limited to this. In the present invention, the spatial irradiation energy distribution of the laser light may be adjusted by methods other than the DMD, such as a diffractive optical element.

[0109] Furthermore, in the fourth embodiment described above, an example was shown where the direction in which the semiconductor chip 1 (element) is transferred is the vertical direction (Z2 direction) drawn downward from the support substrate 10 to the substrate to be transferred 20, but the present invention is not limited to this. In the present invention, the direction in which the element is transferred may be, for example, a direction obtained by correcting the vertical direction drawn downward from the support substrate to the substrate to be transferred based on the position of the element and the transfer position.

[0110] Furthermore, in the fourth embodiment described above, an example was shown in which the semiconductor chip 1 (element) is deformed by irradiating it with laser light L whose distribution of irradiation energy E in the direction along the first edge 1a (Y direction) is adjusted so that the semiconductor chip 1 (element) is transferred along a predetermined direction, thereby forming a blister B. However, the present invention is not limited to this. In the present invention, for example, the element may be deformed by irradiating it with laser light whose distribution of irradiation energy is adjusted so that the element is transferred along a predetermined direction, thereby generating ablation.

[0111] Furthermore, in the fourth embodiment described above, an example was shown in which the blister B and the semiconductor chip 1 (element) are deformed symmetrically with respect to a symmetry axis SX1 that passes through the center of the semiconductor chip 1 in the direction in which the first edge 1a extends (Y direction) and extends in the direction in which the semiconductor chip 1 is transferred. However, the present invention is not limited to this. In the present invention, for example, the blister and the element may be deformed symmetrically with respect to a symmetry axis that passes through the centroid of the element in the direction in which the first edge extends and extends in the direction in which the element is transferred.

[0112] Furthermore, in the fourth embodiment described above, an example was shown in which, in a blister B having two downward-convex protrusions, the irradiation energy E2 of the laser light L at the position between the two protrusions is greater than 0. However, the present invention is not limited to this. In the present invention, for example, in a blister having two downward-convex protrusions, the irradiation energy of the laser light at the position between the two protrusions may be 0. [Explanation of symbols]

[0113] 1. Semiconductor chip (device) 1a First side 1b Second side 2, 302 adhesive layer 10 Support substrate 10a surface (surface supporting the element) 10b plane (the plane opposite to the plane supporting the element) 30 Support board holding part 70 Laser beam irradiation area 74 masks 74a opening 100, 100a, 100b Semiconductor chip transfer equipment (device transfer equipment) A Ablation B Blister L Laser light La dot-shaped laser light L1 (Blister) length L2 (length of the element)

Claims

1. The process includes irradiating a support substrate, which supports a rectangular element via an adhesive layer, with laser light from the side of the support substrate opposite to the side that supports the element, The step of irradiating with laser light is, The process of adjusting the spot shape of the laser beam and irradiating the adhesive layer with the laser beam so that the blister formed by the irradiation of the adhesive layer with the laser beam is shaped along the first side of the rectangular element, A method for transferring an element, comprising the step of sequentially irradiating the laser beam, whose spot shape has been adjusted, multiple times in a direction along a second side that intersects the first side of the rectangular element.

2. The process includes irradiating a support substrate, which supports a rectangular element via an adhesive layer, with laser light from the side of the support substrate opposite to the side that supports the element, The step of irradiating with laser light is, The process of adjusting the spot shape of the laser beam and irradiating the adhesive layer with the laser beam such that ablation, which removes the adhesive layer, occurs along the first side of the rectangular element, A method for transferring an element, comprising the step of sequentially irradiating the laser beam, whose spot shape has been adjusted, multiple times in a direction along a second side that intersects the first side of the rectangular element.

3. The method for transferring an element according to claim 1 or 2, wherein the step of irradiating with laser light includes a step of irradiating with laser light whose distribution of irradiation energy in a direction along the first edge is adjusted so that the element is transferred along a predetermined direction while being deformed by the irradiation of the adhesive layer with respect to the element supported on the support substrate via the adhesive layer.

4. The method for transferring an element according to claim 1, wherein the step of irradiating with laser light includes a step of adjusting the spot shape of the laser light and irradiating such that the length of the blister is greater than or equal to the length of the element in the direction along the first side.

5. The method for transferring an element according to claim 2, wherein the step of irradiating with laser light includes a step of adjusting the spot shape of the laser light and irradiating in a direction along the first edge such that the length of the ablation is greater than or equal to the length of the element.

6. The element transfer method according to claim 1 or 2, wherein the step of adjusting the spot shape of the laser beam and irradiating it includes the step of adjusting the spot shape of the laser beam by passing the laser beam irradiated from the laser beam irradiation unit through an opening provided in the mask so that the laser beam takes a shape along the first edge.

7. The method for transferring an element according to claim 1 or 2, wherein the step of adjusting the spot shape of the laser beam and irradiating it includes shaping the laser beam irradiated from the laser beam irradiation unit into a plurality of dot-shaped laser beams arranged in a direction along the first edge and irradiating them.

8. A support substrate holding part that holds a support substrate that supports a rectangular element via an adhesive layer, The support substrate comprises a laser beam irradiation unit that irradiates laser light toward the support substrate from the surface opposite to the surface that supports the element, The spot shape of the laser beam is adjusted such that the blister formed when the laser beam is irradiated onto the adhesive layer is shaped along the first side of the rectangular element. An element transfer device configured to sequentially irradiate the laser beam, whose spot shape has been adjusted, multiple times in a direction along a second side intersecting the first side of the rectangular element.

9. A support substrate holding part that holds a support substrate that supports a rectangular element via an adhesive layer, The support substrate comprises a laser beam irradiation unit that irradiates laser light toward the support substrate from the surface opposite to the surface that supports the element, The spot shape of the laser beam is adjusted such that when the laser beam is irradiated onto the adhesive layer, ablation occurs along the first side of the rectangular element, causing the adhesive layer to be removed. An element transfer device configured to sequentially irradiate the laser beam, whose spot shape has been adjusted, multiple times in a direction along a second side intersecting the first side of the rectangular element.

Images