Indication device
Patent Information
- Application Number
- JP2026090314
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2018-09-07
- Filing Date
- 2026-05-28
- Publication Date
- 2026-09-08
AI Technical Summary
【0018】 本発明の一態様により、精細度が高い表示装置を提供できる。本発明の一態様により、表 示品位の高い表示装置を提供できる。本発明の一態様により、消費電力の低い表示装置を 提供できる。本発明の一態様により、信頼性の高い表示装置を提供できる。
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Figure 2026143513000001_ABST
Abstract
Description
[Technical Field]
[0001] One aspect of the present invention relates to a display device, a display module, and electronic equipment.
[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. For example, semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, Input devices (e.g., touch sensors), input / output devices (e.g., touch panels), and Examples of these driving methods, or methods for manufacturing them, can be given. [Background technology]
[0003] In recent years, micro light-emitting diodes (micro LEDs) have become popular. A display device using an ode as a display element has been proposed (for example, Patent Document 1). Display devices using LEDs as display elements have advantages such as high brightness, high contrast, and long lifespan. Yes, and research and development are actively underway for it as a next-generation display device. [Prior art documents] [Patent Documents]
[0004] [Patent Document 1] U.S. Patent Application Publication No. 2014 / 0367705 [Overview of the project] [Problems that the invention aims to solve]
[0005] One aspect of the present invention aims to provide a display device with high resolution. One aspect of this invention aims to provide a display device with high display quality. One objective is to provide a display device with low power consumption. One aspect of the present invention is to provide a reliable display device. One of our objectives is to provide high-performance display devices.
[0006] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention is It is not necessarily required to resolve all of these issues. Specifications, drawings, invoices. It is possible to extract other issues from the descriptions in the sections. [Means for solving the problem]
[0007] A display device according to one aspect of the present invention has a pixel containing a first transistor, a second transistor, and a first It has a conductive layer and a light-emitting diode package. The light-emitting diode package is the A first light-emitting diode, a second light-emitting diode, a second conductive layer, a third conductive layer, and a fourth It has a conductive layer. The first light-emitting diode has a first electrode and a second electrode. The second light-emitting diode has a third electrode and a fourth electrode. The first transistor Either the source or the drain is electrically connected to the first electrode via a second conductive layer. The source or drain of the second transistor is connected to the third conductive layer. The electrode is electrically connected to the first conductive layer. The first conductive layer is electrically connected to the second electrode via the fourth conductive layer. They are electrically connected. The first conductive layer is electrically connected to the fourth electrode via the fourth conductive layer. A constant potential is supplied to the first conductive layer.
[0008] Alternatively, a display device according to one aspect of the present invention has a pixel with a first transistor, a second transistor It has a third transistor, a first conductive layer, and a light-emitting diode package. The optical diode package comprises a first light-emitting diode, a second light-emitting diode, and a third light-emitting diode, a second conductive layer, a third conductive layer, a fourth conductive layer, and a fifth conductive layer. The first light-emitting diode comprises a first electrode and a second electrode. The second light-emitting diode comprises a third electrode and a fourth electrode. The third light-emitting diode comprises a fifth electrode and a sixth electrode. One of a source or a drain of a first transistor is electrically connected to the first electrode via the second conductive layer. One of a source or a drain of a second transistor is electrically connected to the third electrode via the third conductive layer. One of a source or a drain of a third transistor is electrically connected to the fifth electrode via the fifth conductive layer. The first conductive layer is electrically connected to the second electrode via the fourth conductive layer. The first conductive layer is electrically connected to the fourth electrode via the fourth conductive layer. The first conductive layer is electrically connected to the sixth electrode via the fourth conductive layer. A constant potential is supplied to the first conductive layer.
[0009] Preferably, the first light-emitting diode, the second light-emitting diode, and the third light-emitting diode are each a mini light-emitting diode. Alternatively, it is preferable that the first light-emitting diode, the second light- emitting diode, and the third light-emitting diode are each a micro light-emitting diode.
[0010] Preferably, the first light-emitting diode, the second light-emitting diode, and the third light-emitting diode each emit light of different colors. For example, the first light-emitting diode emits red light , the second light-emitting diode emits green light, and the third light-emitting diode emits blue light. It is preferable.
[0011] The first transistor, the second transistor, and the third transistor are each, It is preferable that the flannel-forming region contains a metal oxide.
[0012] The fourth conductive layer and the second electrode are electrically connected to each other via the first wire. It is preferable.
[0013] The fourth conductive layer and the fourth electrode are electrically connected to each other via the second wire. It is preferable.
[0014] It is preferable that the second conductive layer and the first electrode are in contact with each other.
[0015] The third conductive layer and the third electrode are electrically connected to each other via a third wire. It is preferable.
[0016] One aspect of the present invention has a display device having the above configuration, and is provided on a flexible printed circuit board (Fl Exible printed circuit (hereinafter referred to as FPC) or TCP Modules with connectors such as (Tape Carrier Package) attached. Or, COG (Chip On Glass) method or COF (Chip On Modules such as modules on which integrated circuits (ICs) are mounted using methods such as film. ru.
[0017] One aspect of the present invention includes the above module, an antenna, a battery, a housing, a camera, and a speaker. It is an electronic device having at least one of the following: a microphone and an operation button. [Effects of the Invention]
[0018] According to one aspect of the present invention, a display device with high resolution can be provided. According to one aspect of the present invention, A display device with high display quality can be provided. According to one aspect of the present invention, a display device with low power consumption can be provided. It is possible to provide a highly reliable display device according to one aspect of the present invention.
[0019] Furthermore, the description of these effects does not preclude the existence of other effects. One aspect of the present invention is It is not necessarily required to have all of these effects. It is possible to extract effects other than those listed above. [Brief explanation of the drawing]
[0020] [Figure 1] A top view showing an example of a display device. [Figure 2] (A) Cross-sectional view showing an example of a display device. (B) Cross-sectional view showing an example of an LED package. (C) Cross-sectional view showing an example of an LED chip. [Figure 3] (A) Cross-sectional view showing an example of a display device. (B)(D) Cross-sectional view showing an example of an LED package. (C) Cross-sectional view showing an example of an LED chip. [Figure 4] A cross-sectional view showing an example of a display device. [Figure 5] A cross-sectional view showing an example of a display device. [Figure 6] A cross-sectional view showing an example of a display device. [Figure 7] A circuit diagram showing an example of a pixel in a display device. [Figure 8] (A)(B) Diagrams showing an example of electronic equipment. [Figure 9] (A)(B) Diagrams showing an example of electronic equipment. [Figure 10] (A)(B) Diagrams showing an example of electronic equipment. [Figure 11] (A)(B)(C)(D) Diagrams showing examples of electronic devices. [Figure 12] (A)(B)(C)(D)(E)(F) Diagrams showing examples of electronic devices. [Figure 13] A photograph of the display device of the embodiment. [Modes for carrying out the invention]
[0021] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be modified in various ways. It will be easily understood by those skilled in the art to obtain this. Therefore, the present invention is as shown in the embodiments below. The interpretation is not limited to the content stated herein.
[0022] In the configuration of the invention described below, the same part or part having a similar function is used. The same symbol is used consistently across different drawings, and explanations of its repetition are omitted. When referring to a function, the same hatch pattern may be used, and a specific symbol may not be assigned.
[0023] Furthermore, the position, size, and extent of each component shown in the drawings are, for the sake of ease of understanding, actually The location, size, and range may not be described. Therefore, the disclosed invention is not always Furthermore, it is not limited to the location, size, scope, etc., disclosed in the drawings.
[0024] Furthermore, the words "membrane" and "layer" may differ depending on the context or situation. And they can be interchanged. For example, the term "conductive layer" can be replaced with "conductive film." It is possible to change the term to this. Or, for example, the term "insulating film" can be changed to It is possible to change the term to "insulating layer".
[0025] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 1 to 7.
[0026] [Overview of display devices] The display device of this embodiment has a first transistor, a second transistor, and a first transistor in each pixel. It has a conductive layer and a light-emitting diode package (also referred to as an LED package).
[0027] LED packages are available in lead frames, boards, or cases, one or more at a time. Light-emitting diodes (or light-emitting diode chips (also referred to as LED chips)) are sealed It has a structure.
[0028] The LED package consists of a first light-emitting diode, a second light-emitting diode, a second conductive layer, and a second It has three conductive layers and a fourth conductive layer.
[0029] The first light-emitting diode has a first electrode and a second electrode. The first electrode is the first It functions as a pixel electrode of the light-emitting diode. The source or drain of the first transistor. One end of the electrode is electrically connected to the first electrode via a second conductive layer.
[0030] The second light-emitting diode has a third electrode and a fourth electrode. The third electrode is the second It functions as the pixel electrode of the light-emitting diode. The source or drain of the second transistor. One end of the wire is electrically connected to the third electrode via a third conductive layer.
[0031] The second electrode functions as a common electrode for the first light-emitting diode, and the fourth electrode is the second electrode It functions as a common electrode of the photodiode. The first conductive layer is connected to the second conductive layer via the fourth conductive layer. The first conductive layer is electrically connected to the fourth electrode via the fourth conductive layer. They are connected by air. A constant potential is supplied to the first conductive layer.
[0032] The display device of this embodiment has an LED package on a circuit board on which multiple transistors are formed It can be manufactured by implementing a page. Therefore, light-emitting diodes (or LED chips) Compared to the method of mounting each component onto a circuit board individually, this method can shorten the manufacturing time of the display device, and also improve manufacturing This can lower the difficulty level. This will increase the yield of the display device manufacturing process. This is possible. Furthermore, it allows for higher resolution and larger display devices.
[0033] The display device of this embodiment has the function of displaying an image using a light-emitting diode. Since diodes are self-luminous, when using light-emitting diodes as display elements, The device does not require a backlight, nor does it need to have a polarizing plate. Therefore, the display This reduces the power consumption of the device and allows for thinner and lighter display devices. Furthermore, display devices that use light-emitting diodes as display elements have high contrast and a wide viewing angle. Therefore, a high display quality can be obtained. In addition, by using inorganic materials as the light-emitting material, This can extend the lifespan of display devices and improve their reliability.
[0034] In this specification, etc., the chip area is 10,000 μm². 2 The following light-emitting diodes Micro LED, chip area 10,000 μm 2 Larger by 1mm 2 The following light-emitting diodes The LED is a mini LED, with a chip area of 1mm². 2 Larger light-emitting diodes are referred to as macro LEDs. There may be cases where this is the case.
[0035] For example, the outer dimensions of the chip are 100 μm. 2 The following light-emitting diodes are microLEDs ( can be referred to as micro LED chips). For example, a 1 mm square LED package can use micro L ED chips or mini LED chips.
[0036] In the display device according to one aspect of the present invention, any of micro LEDs, mini LEDs, and macro LEDs may be used. In particular, the display device according to one aspect of the present invention preferably includes micro LEDs or mini LE Ds, and more preferably includes micro LEDs.
[0037] The area of a light-emitting diode chip is preferably 1 mm 2 or less, more preferably 10000 μm 2 or less, fur thermore preferably 3000 μm 2 or less, still more preferably 700 μm 2 or less.
[0038] The area of the light-emitting region of a light-emitting diode is preferably 1 mm 2 or less, more preferably 10000 μm 2 or less, still more preferably 3000 μm 2 or less, further more preferably 700 μm 2 or less, and even more preferable.
[0039] In the present embodiment, an example in which a micro LED is used as the light-emitting diode will be particularly described below. In the present embodiment, a micro LED having a double heterojunction will be described. However, the light-emitting diode is not particularly limited, and for example, a micro LED having a quantum well junction, an LED using nanocolumns, or the like may be used.
[0040] The transistor included in the display device preferably includes a metal oxide in a channel formation region. A transistor using a metal oxide can reduce power consumption. Therefore, By combining it with micro-LEDs, it is possible to realize a display device with extremely low power consumption. It is possible.
[0041] [Example of display device configuration 1] Figure 1(A) shows a top view of the display device 100. The display device 100 has multiple displays on the display unit 110. It has a number of pixels 130. The display unit 110 has multiple pixels 130 arranged in a matrix. The display unit 110 receives signals from FPC1 and FPC2 via wiring 108. Power is supplied.
[0042] Figure 1(B) shows a top view of the display device 100A. The display device 100A consists of a display unit 110 and It has a circuit 109 between it and the wiring 108. The display unit 110 and the circuit 109 have an FPC1 Alternatively, signals and power are supplied from FPC2 via wiring 108.
[0043] A display device according to one aspect of the present invention includes a scan line drive circuit (gate driver) and a signal line drive circuit ( It can incorporate one or both of the source drivers. Or, according to one aspect of the present invention... The display device does not have a built-in gate driver or source driver, or both. An external configuration is possible. For example, a gate driver or a source driver. An IC that functions as such can be electrically connected to the display device. The IC is COG type It can be implemented in a display device by formula or COF method. Alternatively, the IC is implemented FPC, TAB (Tape Automated Bonding) tape, or TC P, etc., can be connected to a display device.
[0044] Circuit 109 may include, for example, one or both of the gate driver and the source driver. This can be applied.
[0045] Figure 1(C) shows a top view of the pixels 130 of the display device 100. A single LED package 150 is provided. That is, the display unit 110 shown in Figure 1(A) Multiple LED packages 150 are arranged in a matrix.
[0046] Pixel 130 consists of conductive layer 131R, conductive layer 131G, conductive layer 131B, conductive layer 132, and The LED package has a capacity of 150.
[0047] Figure 1(D) shows a top view of the LED package 150 containing the pixel 130.
[0048] The LED package 150 has at least one LED chip. In this embodiment, LED package 150 contains red LED chip 151R and green LED chip 151 An example is shown having G and a blue LED chip 151B. In other words, in this embodiment, The 130th element has a configuration in which one color is represented by three sub-pixels of R (red), G (green), and B (blue). It is applied.
[0049] In addition, each pixel 130 uses four sub-pixels—R, G, B, and W (white)—to represent a single color. By applying a configuration, or a configuration in which one color is represented by four subpixels of R, G, B, and Y (yellow), It can. Also, there are no limitations on the color elements, and colors other than RGBWY (for example, cyan or magenta) You may also use (etc.).
[0050] The LED package 150 also includes a heatsink 154, electrodes 152R, and electrodes 152G. It has electrodes 152B and 153.
[0051] The red LED chip 151R is located on electrode 152R. The green LED chip 151 The G and blue LED chips 151B are located on the heatsink 154.
[0052] Red LED chip 151R, green LED chip 151G, and blue LED chip 1 Each of the 51Bs is electrically connected to the electrode 153 via the wire 143.
[0053] Red LED chip 151R, green LED chip 151G, and blue LED chip 1 Preferably, 51B has light-emitting diodes that emit light of different colors from each other. This eliminates the need for a process to form a color conversion layer. Therefore, it reduces the manufacturing cost of LED chips. It can be controlled.
[0054] Additionally, red LED chip 151R, green LED chip 151G, and blue LED chip The 151B may have a light-emitting diode that emits light of the same color. Light emitted from the iod is transmitted to the display device via one or both of the color conversion layer and the coloring layer. It may be removed externally. One or both of the color conversion layer and the coloring layer are in the LED package 1 It can be installed inside or above 50.
[0055] Furthermore, the display device of this embodiment may have a light-emitting diode that emits infrared light. Light-emitting diodes that emit infrared light can be used, for example, as a light source for an infrared light sensor. ru.
[0056] Figure 2(A) shows a cross-sectional view between the dashed line A and B in Figure 1(C). In other words, Figure 2(A ) is a blue LED chip 151B and is electrically connected to the blue LED chip 151B. This is a cross-sectional view including conductive layers 131B and 132. Note that in Figure 2(A) For clarity, some components, such as wiring, are omitted.
[0057] Note that the green LED chip 151G is electrically connected to the said green LED chip 151G. The cross-sectional structure including the conductive layer 131G and conductive layer 132 is the same as in Figure 2(A). For further information, please refer to the following explanation.
[0058] As shown in Figure 2(A), in the display device 100, the transistor 120 is connected to the conductive layer 131B It is electrically connected to the LED package 150 via this.
[0059] Transistor 120 has a conductive layer 121 that functions as the back gate, and a gate insulating layer Functional insulating layer 122, metal oxide layer 123 (channel forming region) functioning as a semiconductor layer 123i and a pair of low-resistance regions 123n are electrically connected to each other. A pair of conductive layers 126a, 126b, an insulating layer 124 that functions as a gate insulating layer, and Furthermore, it has a conductive layer 125 that functions as a gate. Conductive layer 121 and metal oxide layer 123 These overlap via the insulating layer 122. The conductive layer 125 and the metal oxide layer 123 overlap via the insulating layer 124 They overlap through each other.
[0060] An insulating layer 127 is provided on the transistor 120, and a conductive layer 1 31B and a conductive layer 132 are provided. Through an opening provided in the insulating layer 127, The electrolytic layer 131B is electrically connected to the conductive layer 126b.
[0061] Of the insulating layer 124 and insulating layer 127, at least one layer contains impurities such as water or hydrogen. It is preferable to use a material that does not easily diffuse impurities. This makes it possible to effectively suppress this and improve the reliability of the display device. The marginal layer 127 functions as a flattening layer.
[0062] In Figure 2(A), the transistor 120 is provided on the substrate 102 via an insulating layer 104. The insulating layer 104 functions as an underlayer. The insulating layer 104 is on the substrate 10 Impurities such as water and hydrogen diffuse from 2 to transistor 120, and the metal oxide layer It functions as a barrier layer to prevent oxygen from detaching from 123 to the insulating layer 104. Examples of 104 include aluminum oxide films, hafnium oxide films, silicon nitride films, etc. Furthermore, a film can be used that is less permeable to the diffusion of hydrogen and oxygen than a silicon oxide film. The edge layer 104 may be omitted, and the transistor 120 may be formed directly on the substrate 102.
[0063] The edges of conductive layer 131B and conductive layer 132 are covered by protective layer 128. The protective layer 128 has an opening that reaches the upper surface of the conductive layer 131B and an opening that reaches the upper surface of the conductive layer 132. It has an opening. In the opening, conductive layer 131B and conductive layer 132 are conductive It is electrically connected to the LED package 150 via 133.
[0064] The material for the protective layer 128 may be a resin such as acrylic, polyimide, epoxy, or silicone. This is preferable. By providing the protective layer 128, the conductor 133 on the conductive layer 131B and the conductive This prevents short circuits caused by contact between the conductor 133 on layer 132 and the protective layer 1. 28 does not need to be included.
[0065] The conductor 133 may be a conductive paste such as silver, carbon, or copper, or gold, solder, etc. The bumps can be suitably used. Also, the conductive layer 131R connected to the conductor 133. , 131G, 131B, 132, and electrodes 152R, 152G, 152B, 153 are, It is preferable to use conductive materials with low contact resistance with the conductor 133 for each component. For example, if silver paste is used for the conductor 133, the conductive material connected to it is aluminum A copper alloy (Ag-Pd) of nium, titanium, copper, silver (Ag), palladium (Pd), and copper (Cu). Materials such as -Cu(APC) are preferable because they have low contact resistance.
[0066] The conductor 133 may be provided on the substrate 102 or on the LED package 150 side. For example, on conductive layers 131R, 131G, 131B, and 132, respectively, a conductive material 13 After setting up 3, the conductive material 133 and the LED package 150 are connected to the substrate 10 An LED package 150 can be mounted on top of 2.
[0067] Furthermore, multiple light-emitting diodes may be electrically connected to a single transistor.
[0068] The sides of the LED package 150 may be covered with resin 129. Using black resin is preferable because it enhances the contrast of the display. Also, LE A surface protection layer, an impact absorption layer, etc. may be provided on the top surface of the D package 150. The cage 150 is configured to extract light from the top, and is therefore placed on the top surface of the LED package 150. The layer is preferably transparent to visible light.
[0069] The substrate 102 may be an insulating substrate such as a glass substrate, quartz substrate, sapphire substrate, or ceramic substrate. A single-crystal semiconductor substrate, or a polycrystalline semiconductor substrate made of silicon or silicon carbide, etc. Conductor substrates, compound semiconductor substrates such as silicon germanium, and semiconductor substrates such as SOI substrates It can be used.
[0070] The substrate 102 preferably blocks visible light (is opaque to visible light). By blocking visible light, 102 prevents light from entering the transistor 120 formed on the substrate 102 from the outside. This can prevent the intrusion of [unclear]. However, one aspect of the present invention is not limited thereto. The substrate 102 may be transparent to visible light.
[0071] Furthermore, the substrate 102 includes a reflective layer that reflects the light from the light-emitting diode and a light-shielding layer that blocks the light. It may have one or both.
[0072] The multiple light-emitting diodes (LED chips) in the LED package 150 have the same configuration. It may be driven by transistors, each driven by transistors with a different configuration. It may be driven. For example, a transistor that drives a red LED chip 151R and a green LED. A transistor drives the LED chip 151G and drives the blue LED chip 151B. The transistors are characterized by their size, channel length, channel width, and structure. At least one of them may be different from the others. Specifically, to emit light at a desired brightness. Depending on the amount of current required, one of the transistor's channel length and channel width is determined for each color. Alternatively, both may be changed.
[0073] The materials that can be used for the various conductive layers constituting the display device of this embodiment are as follows: Aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum Metals such as den, silver, tantalum, or tungsten, or alloys with these as the main component. Examples include using films containing these materials as a single layer or as a multilayer structure. This can be achieved. For example, a single-layer structure of an aluminum film containing silicon, or an aluminum film on a titanium film. A two-layer structure with a layered aluminum film, a two-layer structure with an aluminum film layered on top of a tungsten film, copper- A two-layer structure in which a copper film is laminated on a magnesium-aluminum alloy film, and a copper film is laminated on a titanium film. Layered two-layer structure, two-layer structure with copper film laminated on tungsten film, titanium film or titanium nitride A film is laid out, with an aluminum film or copper film layered on top of it, and then a titanium film is laid on top of that. Alternatively, a three-layer structure forming a titanium nitride film, a molybdenum film or a molybdenum nitride film, and on the same An aluminum film or copper film is laminated on top of that, and then a molybdenum film or nitride film is placed on top of that. Some materials have a three-layer structure that forms a ribdenum film. These can be indium oxide, tin oxide, or zinc oxide. Oxides such as the above may also be used. In addition, if copper containing manganese is used, the shape will be altered by etching. This is preferable because it improves controllability.
[0074] The materials that can be used for the various insulating layers constituting the display device of this embodiment are as follows: acrylic, polyimide, epoxy, silicone resins, silicon oxide, silicon nitride Examples of inorganic insulating materials include silicon nitride, silicon oxide, and aluminum oxide. It is possible.
[0075] Figure 2(B) will be used to explain the LED package 150 in more detail. Also, Figure 2(C) The blue LED chip 151B will be explained in more detail using this method.
[0076] The LED package 150 shown in Figure 2(B) consists of a substrate 141 and a blue LED chip 151B. Electrode 152B, electrode 153, heat sink 154, adhesive layer 146, case 142, wire It has a wire 143, a wire 144, and a sealing layer 145.
[0077] The blue LED chip 151B is bonded onto the substrate 141 by an adhesive layer 146. The blue LED chip 151B is attached to the heatsink 154 via an adhesive layer 146. It is designed to be so. There are no particular limitations on the material of the adhesive layer 146, but as will be described later, The red LED chip 151R is electrically connected to electrode 152R, so that electrode 152R To bond them together, the adhesive layer 146 is conductive, and each color LED chip adheres to the adhesive layer 1 46 materials can be provided, which is preferable. Also, blue LED chips and green LEDs. In the chip, using a conductive adhesive as the adhesive layer 146 improves heat dissipation. Preferred. The heat sink 154 is made of the same material as electrodes 152B and 153 and the same material as electrodes 152B and 153. It can be formed in the process.
[0078] The substrate 141 includes a glass epoxy resin substrate, a polyimide substrate, a ceramic substrate, and alumina A substrate, an aluminum nitride substrate, etc., can be used.
[0079] The blue LED chip 151B shown in Figure 2(C) is a light-emitting diode (LE) on the substrate 101. The light-emitting diode has a configuration in which D) is provided. The light-emitting diode has a semiconductor layer 111, an electrode 112, and light emission It has a layer 113, a semiconductor layer 114, an electrode 115, and an electrode 116.
[0080] Electrode 112 is electrically connected to semiconductor layer 111. Electrode 116 is connected to electrode 115. It is electrically connected to the semiconductor layer 114 via this. Electrodes 115 and 116 are only one of each. It may be provided. The light-emitting layer 113 is sandwiched between the semiconductor layer 111 and the semiconductor layer 114. In the light-emitting layer 113, electrons and holes combine to emit light. Semiconductor layer 111 and semiconductor layer 114 Of these, one is an n-type semiconductor layer, and the other is a p-type semiconductor layer.
[0081] In the blue LED chip 151B, the semiconductor layer 111, the light-emitting layer 113, and the semiconductor layer 1 The layered structure containing 14 is formed to emit blue light.
[0082] Furthermore, in each color of light-emitting diode, there is a pair of semiconductor layers and the light between the pair of semiconductor layers. A laminated structure having a light layer is shaped to emit light such as red, yellow, green, or blue. This is achieved. The laminated structure includes, for example, gallium phosphorus compounds, gallium arsenide compounds, Gallium-aluminum-arsenide compounds, aluminum-gallium-indium-phosphate compounds The following are used: materials, gallium nitride, indium-gallium nitride compounds, selenium-zinc compounds, etc. It is possible.
[0083] Examples of substrates 101 include sapphire (Al2O3) substrates and silicon carbide (SiC) substrates. By using single-crystal substrates such as silicon (Si) substrates and gallium nitride (GaN) substrates... It is possible.
[0084] Electrode 112 is electrically connected to electrode 152B via wire 143. Electrode 112 It functions as a pixel electrode of the light-emitting diode. Electrode 116 is connected via wire 144, It is electrically connected to electrode 153. Electrode 116 functions as a common electrode for the light-emitting diode. do.
[0085] Electrodes 152B and 153 are selected from nickel, copper, silver, platinum, or gold, respectively. It can be formed from a single element, or from an alloy material containing 50% or more of that element.
[0086] The connection between electrode 152B and electrode 112, and the connection between electrode 153 and electrode 116, Furthermore, a wire bonding method using thermocompression bonding or ultrasonic bonding is used. It is possible.
[0087] Wire 143 and wire 144 contain gold, a gold-containing alloy, copper, or a copper-containing alloy, respectively. Fine metal wires made of alloys or other materials can be used.
[0088] The material for case 142 can be resin. Case 142 is at least blue. It is sufficient to cover the sides of the LED chip 151B, and the top surface of the blue LED chip 151B It does not need to overlap. For example, on the upper side of the blue LED chip 151B, the sealing layer 14 5 may be exposed. The inner side of case 142, specifically the blue LED chip. It is preferable to provide a reflector made of ceramic or the like around 151B. A portion of the light emitted by the ED chip 151B is reflected by the reflector, allowing more Light can be extracted from the LED package 150.
[0089] The inside of case 142 is filled with a sealing layer 145. The sealing layer 145 is made of visible light A resin that is permeable to the light is preferred. For example, epoxy resin is suitable for the sealing layer 145. UV-curable resins such as lipids and silicone resins, and visible light-curable resins can be used. .
[0090] Figure 3(A) shows a cross-sectional view between the dashed lines C and D in Figure 1(C). In other words, Figure 3(A ) is a red LED chip 151R and is electrically connected to the said red LED chip 151R. This is a cross-sectional view including conductive layer 131R and conductive layer 132. Note that in Figure 3(A) For clarity, some components, such as wiring, are omitted.
[0091] As shown in Figure 3(A), in the display device 100, the transistor 120A is connected to the conductive layer 131 It is electrically connected to the LED package 150 via R.
[0092] Since transistor 120A has the same configuration as transistor 120 shown in Figure 2(A), I will omit the detailed explanation.
[0093] An insulating layer 127 is provided on the transistor 120A, and a conductive layer is provided on the insulating layer 127. 131R and conductive layer 132 are provided. Through an opening provided in the insulating layer 127, The conductive layer 131R is electrically connected to the conductive layer 126b.
[0094] The conductive layer 131R and the conductive layer 132 are connected to the LED package via the conductor 133. It is electrically connected to the J150.
[0095] Figure 3(B) will be used to explain the LED package 150 in more detail. Also, Figure 3(C) The red LED chip 151R will be explained in more detail using [this method].
[0096] The LED package 150 shown in Figure 3(B) consists of a substrate 141 and a red LED chip 151R. , electrode 152R, electrode 153, adhesive layer 146, case 142, wire 144, and sealing layer It has 145.
[0097] The red LED chip 151R is connected to electrode 152R via a conductive adhesive layer 146. They are electrically connected.
[0098] The red LED chip 151R shown in Figure 3(C) consists of an electrode 103, a semiconductor layer 117, and a light-emitting layer. It has a semiconductor layer 118, a semiconductor layer 119, and an electrode 106. The red LED chip 151R emits It can also be called a photodiode (LED). Furthermore, the red LED chip is on a conductive substrate. A configuration in which a light-emitting diode is provided on top is also possible.
[0099] Electrode 103 is electrically connected to semiconductor layer 117. Electrode 106 is electrically connected to semiconductor layer 11 It is electrically connected to 9. The light-emitting layer 118 is sandwiched between semiconductor layer 117 and semiconductor layer 119. It is held. In the light-emitting layer 118, electrons and holes combine to emit light. Semiconductor layer 117 and Of the semiconductor layers 119, one is an n-type semiconductor layer and the other is a p-type semiconductor layer.
[0100] Electrode 103 is electrically connected to electrode 152R via adhesive layer 146. It functions as a pixel electrode of the light-emitting diode. Electrode 106 is connected via wire 144, It is electrically connected to electrode 153. Electrode 106 functions as a common electrode for the light-emitting diode. do.
[0101] As shown in Figure 3(D) of the LED package 155, the case 142 contains a color conversion layer. A layer 147 may be provided. This allows the light from the light-emitting diode to pass through the color conversion layer 147. It is then emitted to the outside of the LED package 155.
[0102] Note that Figure 3(D) shows a configuration in which the color conversion layer 147 is provided above the sealing layer 145. The arrangement of the color conversion layer 147 is not limited thereto. For example, the color conversion layer 147 may be placed on the sealing layer 14 It may be distributed within 5.
[0103] As the color conversion layer 147, phosphors or quantum dots (QD) are used. It is preferable that quantum dots have a narrow peak width in their emission spectrum and good color purity. This allows for the production of high-quality light. This, in turn, improves the display quality of the display device.
[0104] For example, all of the LED chips contained in the LED package 155 emit blue light. If the LED package 155 has a light-emitting diode that exhibits color change, the color change may occur inside or above the LED package 155. It is preferable that a replacement layer 147 is provided. Specifically, a red LED chip 151R A color conversion layer 147 that converts blue light to red is provided in a position that overlaps with the green LED. A color conversion layer 147 that converts blue light to green is provided in a position that overlaps with the top 151G. It is preferable to do so.
[0105] As a result, in the red subpixel, the light emitted by the light-emitting diode is converted by the color conversion layer 147 It is converted from blue to red and emitted outside the display device. Also, in the green subpixels... The light emitted by the light-emitting diode is converted from blue to green by the color conversion layer 147, and the display device It is emitted to the outside of the location. Also, in the blue subpixel, the blue light emitted by the light-emitting diode However, it is directly emitted outside the display device.
[0106] The color conversion layer 147 is applied by droplet ejection (e.g., inkjet method), coating method, and imprint method. It can be formed using various printing methods (screen printing, offset printing, etc.). Alternatively, a color conversion film such as a quantum dot film may be used.
[0107] The phosphor can be an organic resin layer on which the phosphor is printed or painted on the surface, or a mixture of phosphors. An organic resin layer or the like can be used.
[0108] There are no particular limitations on the materials that make up quantum dots; for example, Group 14 elements and Group 15 elements. Elements, Group 16 elements, compounds consisting of multiple Group 14 elements, belonging to Groups 4 through 14. Compounds of an element and a Group 16 element, compounds of a Group 2 element and a Group 16 element, and a Group 13 element Compounds with Group 15 elements, compounds with Group 13 and Group 17 elements, and compounds with Group 14 and Group 1 Compounds with Group 5 elements, compounds with Group 11 and Group 17 elements, iron oxides, titanium oxides Examples include chalcogenide spinels and semiconductor clusters.
[0109] Specifically, cadmium selenide, cadmium sulfide, cadmium telluride, and zinc selenide. Zinc oxide, zinc sulfide, zinc telluride, mercury sulfide, mercury selenide, mercury telluride, arsenide Indium, indium phosphide, gallium arsenide, gallium phosphide, indium nitride, gallium nitride Indium antimonide, gallium antimonide, aluminum phosphide, aargonide Aluminum, aluminum antimonide, lead selenide, lead telluride, lead sulfide, lead selenide Indium, indium telluride, indium sulfide, gallium selenide, arsenic sulfide, selenium Arsenic ions, arsenic telluride, antimony sulfide, antimony selenide, antimony telluride, sulfur Bismuth bismuth, bismuth selenide, bismuth telluride, silicon, silicon carbide, germanium Tin, selenium, tellurium, boron, carbon, phosphorus, boron nitride, boron phosphide, boron arsenide, Aluminum nitride, aluminum sulfide, barium sulfide, barium selenide, barium telluride Um, calcium sulfide, calcium selenide, calcium telluride, beryllium sulfide, se Beryllium lenide, beryllium telluride, magnesium sulfide, magnesium selenide, sulf Germanium selenium, germanium selenide, germanium telluride, tin sulfide, tin selenide, Tin telluride, lead oxide, copper fluoride, copper chloride, copper bromide, copper iodide, copper oxide, copper selenide, oxide Nickel, cobalt oxide, cobalt sulfide, iron oxide, iron sulfide, manganese oxide, molybdenum sulfide Vanadium oxide, tungsten oxide, tantalum oxide, titanium oxide, zirconium oxide Silicon nitride, germanium nitride, aluminum oxide, barium titanate, selenium and zinc Compounds of cadmium, compounds of indium, arsenic, and phosphorus, and compounds of cadmium, selenium, and sulfur Compounds, compounds of cadmium, selenium, and tellurium, compounds of indium, gallium, and arsenic, Compounds of indium, gallium, and selenium; compounds of indium, selenium, and sulfur; copper and indium Examples include compounds of zinc and sulfur, and combinations thereof. Furthermore, any composition is possible. You may also use so-called alloy-type quantum dots, which are expressed as ratios.
[0110] Examples of quantum dot structures include core-type, core-shell-type, and core-multishell-type. Furthermore, because quantum dots have a high proportion of surface atoms, they are highly reactive and do not aggregate. It is prone to hardening. Therefore, a protective agent is attached to the surface of the quantum dot or a protective group is provided. It is preferable that the protective agent is attached or that a protective group is provided. Therefore, aggregation can be prevented and solubility in the solvent can be increased. In addition, reactivity can be reduced. It is also possible to improve electrical stability.
[0111] As the size of a quantum dot decreases, the band gap increases, allowing it to reach the desired wavelength. The size is adjusted appropriately so that light is obtained. Because the light emitted by quantum dots shifts towards the blue side, that is, towards the higher energy side, quantum dots By changing the size, the wavelength range of the spectrum in the ultraviolet, visible, and infrared regions can be changed. The emission wavelength can be adjusted across a wide range. The size (diameter) of the quantum dot is For example, 0.5 nm to 20 nm, preferably 1 nm to 10 nm. Quantum The narrower the size distribution of the dots, the narrower the emission spectrum becomes, resulting in better color purity. Light can be obtained. Furthermore, the shape of the quantum dot is not particularly limited; it can be spherical, rod-shaped, or disc-shaped. , or other shapes may be used. A quantum rod, which is a rod-shaped quantum dot, has directionality. It has the function of emitting light.
[0112] Alternatively, a laminated structure of a color conversion layer 147 and a coloring layer is formed inside or above the LED package 155. It may have a structure. As a result, the light converted by the color conversion layer 147 is converted by the colored layer By passing through it, the purity of the light can be increased. Also, it overlaps with the blue LED chip 151B. A blue colored layer may be provided. Providing a blue colored layer enhances the purity of blue light. This is possible. If the blue colored layer is omitted, the manufacturing process can be simplified.
[0113] A colored layer is a colored layer that transmits light in a specific wavelength range. For example, red, green, blue, or yellow. Color filters that transmit light within the wavelength range of the color can be used. Materials that can be used include metal materials, resin materials, and resin materials containing pigments or dyes. It can be listed.
[0114] [Example of display device configuration 2] Figures 4 to 6 show examples of cross-sectional configurations of a display device that differ from example configuration 1 of the display device.
[0115] The display devices shown in Figures 4 to 6 mainly consist of LED packages 150 and electrically connected transistors. The structure of the inverter is different from that shown in Figure 2(A).
[0116] In the display device shown in Figure 4, transistor 120B transmits LED signals via conductive layer 131B. It is electrically connected to package 150.
[0117] Transistor 120B has a conductive layer 121 that functions as the gate, and a gate insulating layer that functions as the gate insulating layer. An insulating layer 122, a metal oxide layer 123 that functions as a semiconductor layer, and a source and drain. A pair of conductive layers 126a, 126b function as a gate insulating layer, and an insulating layer 12 It has 4a, 124b, and a conductive layer 125 that functions as a back gate. Conductive layer 1 21 and the metal oxide layer 123 overlap via the insulating layer 122. The conductive layer 125 and the metal oxide Layer 123 overlaps with insulating layers 124a and 124b.
[0118] An insulating layer 127 is provided on the transistor 120B, and a conductive layer is provided on the insulating layer 127. 131B and the conductive layer 132 are provided. Through an opening provided in the insulating layer 127, The conductive layer 131B is electrically connected to the conductive layer 126b.
[0119] In the display device shown in Figure 5, transistor 120C is connected via conductive layer 131B, etc. It is electrically connected to package D 150.
[0120] On substrate 174 are an insulating layer 175, a transistor 120C, a conductive layer 184a, and a conductive layer 18 4b, conductive layer 187, conductive layer 189, insulating layer 186, insulating layer 188, conductive layer 131B, and Furthermore, a conductive layer 132, etc., is provided on the substrate 174. Insulating layers such as layer 181, insulating layer 182, insulating layer 183, and insulating layer 185 are provided. One or more of these insulating layers may sometimes be considered components of a transistor. In this embodiment, the transistor components will not be included in the description.
[0121] The substrate 151 may be an insulating substrate such as a glass substrate, quartz substrate, sapphire substrate, or ceramic substrate. A single-crystal semiconductor substrate, or a polycrystalline semiconductor substrate made of silicon or silicon carbide, etc. Conductor substrates, compound semiconductor substrates such as silicon germanium, and semiconductor substrates such as SOI substrates It can be used.
[0122] The substrate 151 preferably blocks visible light (is opaque to visible light). By blocking visible light from 151, the transistor 120C formed on the substrate 151 is not affected by external light. It is possible to suppress the entry of light. However, one aspect of the present invention is not limited thereto. The substrate 151 may also be transparent to visible light.
[0123] An insulating layer 175 is provided on the substrate 174. The insulating layer 175 is designed to prevent water from entering the substrate 174. Impurities such as hydrogen diffuse into transistor 120C, and metal oxide layer 165 It functions as a barrier layer to prevent oxygen from escaping from the insulating layer 175. Examples include aluminum oxide films, hafnium oxide films, silicon nitride films, etc. A film that inhibits the diffusion of hydrogen and oxygen more effectively than a silicon film can be used.
[0124] Transistor 120C consists of a conductive layer 161, an insulating layer 163, an insulating layer 164, and a metal oxide layer 1 65, it has a pair of conductive layers 166, an insulating layer 167, a conductive layer 168, etc.
[0125] The metal oxide layer 165 has a channel-forming region. The metal oxide layer 165 has a pair of conductive A first region overlapping with one of the layers 166, and a second region overlapping with the other of the pair of conductive layers 166. It has a third region between the first region and the second region.
[0126] A conductive layer 161 and an insulating layer 162 are provided on the insulating layer 175, and the conductive layer 161 and insulating layer 1 Insulating layers 163 and 164 are provided covering 62. The metal oxide layer 165 is It is provided on the insulating layer 164. The conductive layer 161 functions as a gate electrode, and the insulating layer 16 3 and the insulating layer 164 function as a gate insulating layer. The conductive layer 161 is insulating layer 163 and insulating layer 164. It overlaps with the metal oxide layer 165 via the edge layer 164. The insulating layer 163 is similar to the insulating layer 175. Preferably, it functions as a barrier layer. Insulating layer 164 in contact with metal oxide layer 165 It is preferable to use an oxide insulating film such as a silicon oxide film.
[0127] Here, the height of the upper surface of the conductive layer 161 is approximately equal to the height of the upper surface of the insulating layer 162. For example, after making an opening in the insulating layer 162 and forming a conductive layer 161 to fill the opening, By performing a planarization treatment using methods such as CMP, the height of the upper surface of the conductive layer 161 and the insulating layer 1 The height of the top surface of 62 can be made uniform. This allows the size of transistor 120C to be adjusted. It can be made smaller.
[0128] A pair of conductive layers 166 are spaced apart on the metal oxide layer 165. 166 functions as source and drain. Metal oxide layer 165 and a pair of conductive layers 1 An insulating layer 181 is provided covering 66, and an insulating layer 182 is provided on top of the insulating layer 181. The insulating layer 181 and insulating layer 182 are provided with openings that reach the metal oxide layer 165. The opening has an insulating layer 167 and a conductive layer 168 embedded inside it. It overlaps with the third region described above. The insulating layer 167 is on the side of the insulating layer 181 and the side of the insulating layer 182. It overlaps with the insulating layer 167. The conductive layer 168 is connected to the side surface of the insulating layer 181 and the insulating layer 18 It overlaps with side 2. The conductive layer 168 functions as a gate electrode, and the insulating layer 167 is gate insulating. It functions as a layer. The conductive layer 168 overlaps with the metal oxide layer 165 via the insulating layer 167.
[0129] Here, the height of the upper surface of the conductive layer 168 is approximately equal to the height of the upper surface of the insulating layer 182. For example, an opening is provided in the insulating layer 182, and the insulating layer 167 and conductive layer 1 are placed to fill the opening. After forming 68, a planarization process is performed to set the height of the upper surface of the conductive layer 168 and the insulating layer 182 The height of the top surface can be made uniform. This allows the size of the transistor 120C to be reduced. It can be done.
[0130] Then, the insulating layer 183 covers the upper surfaces of the insulating layer 182, the insulating layer 167, and the conductive layer 168. And an insulating layer 185 is provided. Insulating layer 181 and insulating layer 183 are provided with insulating layer 175 and Similarly, it is preferable that it functions as a barrier layer. The insulating layer 181 is used to support a pair of conductive layers 166. By covering it, the oxygen contained in the insulating layer 182 causes the pair of conductive layers 166 to oxidize. It can suppress and.
[0131] A plug that is electrically connected to one of the pair of conductive layers 166 and conductive layer 187 is located on the insulating layer 18 1. Embedded in the openings provided in the insulating layer 182, insulating layer 183, and insulating layer 185 The plug has a conductive layer 1 that is in contact with the side surface of the opening and the upper surface of one of the pair of conductive layers 166. The conductive layer 84a and the conductive layer 184b embedded inside the conductive layer 184a are This is preferable. In this case, the conductive layer 184a is a conductive material that does not easily diffuse hydrogen and oxygen. It is preferable to use [this].
[0132] A conductive layer 187 is provided on the insulating layer 185, and an insulating layer 186 is provided on the conductive layer 187. The insulating layer 186 has an opening that reaches the conductive layer 187, and inside the opening A conductive layer 189 is embedded. The conductive layer 189 connects the conductive layer 187 and the conductive layer 131B. It functions as a plug for electrical connection.
[0133] One of the pair of conductive layers 166 consists of conductive layer 184a, conductive layer 184b, conductive layer 187, and conductive It is electrically connected to the conductive layer 131B via the electrolytic layer 189.
[0134] As described above, in the transistor 120C shown in Figure 5, the height of the upper surface of the conductive layer 161 is This roughly coincides with the height of the upper surface of the margin layer 162. Also, in transistor 120C shown in Figure 5... The height of the upper surface of the conductive layer 168 is approximately equal to the height of the upper surface of the insulating layer 182.
[0135] Thus, in this embodiment, the height of the upper surface of the gate electrode is the height of the upper surface of the insulating layer. It is preferable to have a transistor that is roughly consistent with [the specified value]. For example, CMP (Chem Planarization is performed using methods such as ical mechanical polishing. By doing so, the top surface of the gate electrode and the top surface of the insulating layer are made flat, and the height of the top surface of the gate electrode and the insulating layer are made flat. The height of the top surface of the layers can be made uniform.
[0136] Transistors with this configuration can be easily made smaller. By reducing the size of the display device, the size of the pixels can be reduced. It can increase the level of detail.
[0137] In the display device shown in Figure 6, similar to the display device shown in Figure 5, transistor 120C is conductive It is electrically connected to the LED package 150 via layer 131B, etc.
[0138] The display device shown in Figure 6 includes a transistor 190 having a channel formation region on a substrate 191, The device comprises a stack of transistors 120C having a channel-forming region in a metal oxide.
[0139] A single-crystal silicon substrate is preferred as the substrate 191. The transistor 190 has a conductive layer It has a conductive layer 195, an insulating layer 194, an insulating layer 196, and a pair of low-resistance regions 193. It functions as a gate. The insulating layer 194 is located between the conductive layer 195 and the substrate 191. functions as a gate insulating layer. The insulating layer 196 is provided covering a side surface of the conductive layer 195 and functions as a sidewall. The pair of low-resistance regions 193 are regions in the substrate 191 that are doped with an impur ity, one of which functions as the source of the transistor 190, and the other functions as the drain of the transistor 190.
[0140] Further, an element isolation layer 192 is provided between two adjacent transistors so as to be embedded in the substrate 191.
[0141] An insulating layer 199 is provided covering the transistor 190, and a conductive layer 198 is provided on the insulating layer 199. Through an opening in the insulating layer 199, the conductive layer 198 is electrically connected to one of the pair of low-resistance regions 19 3. An insulating layer 171 is provided covering the conductive layer 198, and a conductive layer 172 is provided on the insulating layer 171. The conductive layer 198 and the conductive layer 172 each function as a wiring. Further, an insulating layer 173 and an insulating layer 175 are provided covering the conductive layer 172, and a transistor 120C is provided on the insulating layer 175. Since the stacked structure from the insulating layer 175 to the LED package 150 is the same as that of the display device shown in FIG. 5, detailed description thereof is omitted.
[0142] The transistor 120C can be used as a transistor constituting a pixel circuit. Further, the transistor 190 can be used as a transistor constituting a pixel circuit, or a transistor constituting a drive circuit (one or both of a gate driver and a source driver) for driving the pixel circuit. Further, the transistor 120C and the transistor 1 90 can each be used as transistors constituting various circuits such as an arithmetic circuit and a memory circuit. It is possible to be there.
[0143] This configuration allows for the placement of not only the pixel circuit but also the driving circuit and other components directly beneath the light-emitting diode. Because it can be formed, the display device can be formed in a way that is different from the case where the drive circuit is provided on the outside of the display unit. It can be miniaturized. Furthermore, it enables the realization of a display device with a narrow bezel (a small non-display area). It is possible.
[0144] A display device according to one aspect of the present invention is a display device (input / output device or touch sensor) equipped with a touch sensor. It may also be called a touch panel. Apply the configuration of each of the above-described display devices to a touch panel. It is possible.
[0145] The detection element (also called a sensor element) of a touch panel according to one embodiment of the present invention is not limited. Various sensors capable of detecting the proximity or contact of an object to be detected, such as a finger or stylus. It can be applied as a detection element.
[0146] Examples of sensor types include capacitive, resistive, surface acoustic wave, and infrared sensors. Various methods can be used, such as optical, pressure-sensitive, and other similar methods.
[0147] Capacitive capacitance methods include surface capacitance and projected capacitance. Capacitive capacitance methods include self-capacitance methods and mutual capacitance methods. This is preferable because it enables simultaneous multi-point detection.
[0148] A touch panel according to one aspect of the present invention is formed by bonding together a separately manufactured display device and a detection element. The configuration includes a substrate supporting the display element and a counter substrate, with the detection element configured on one or both of these substrates. Various configurations can be applied, such as configurations that include poles.
[0149] As described above, in the display device according to the present embodiment, an LED package is mounted on a substrate on which a plurality of transistors are formed, whereby the display device can be manufactured. This reduces the manufacturing difficulty of the display device and improves the yield. Furthermore, by combining a micro LED with a transistor using a metal oxide, a display device with reduced power consumption can be realized.
[0150] Further, in the display device according to the present embodiment, since the size of transistors can be reduced, the definition can be increased, and application to electronic devices having a relatively small display portion is facilitated.
[0151] The present embodiment can be appropriately combined with other embodiments. In this specification, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined with each other.
[0152] (Embodiment 2) In the present embodiment, pixels of a display device according to one aspect of the present invention will be described with reference to Fig. 7.
[0153] [Pixel] The display device according to the present embodiment includes a matrix of m rows and n columns (m and n are each an integer of 1 or more) having a plurality of pixels arranged in a pattern. Fig. 7 shows an example of a circuit diagram of a pixel 200(i,j) (i is an integer of 1 or more and m or less, and j is an integer of 1 or more and n or less).
[0154] The pixel 200(i,j) shown in Fig. 7 includes a light-emitting element 210, a switch SW21, a switch SW 22, a transistor M, and a capacitive element C1.
[0155] In the present embodiment, an example in which a transistor is used as the switch SW21 will be described. The switch The gate of SW21 is electrically connected to scan line GL1(i). The drain and the other are electrically connected to the signal line SL(j) on one side and to the transistor on the other. It is electrically connected to the gate M.
[0156] In this embodiment, an example is shown in which a transistor is used as the switch SW22. The gate of SW22 is electrically connected to scan line GL2(i). The drain and the gate of transistor M are connected, with one being electrically connected to wiring COM and the other to the gate of transistor M. It is electrically connected to the .
[0157] The gate of transistor M is connected to one electrode of the capacitive element C1, the source of switch SW21, and The other end of the drain, and the other end of the source and drain of switch SW22 are electrically connected. The source and drain of transistor M are electrically connected to the CATHODE wiring, one of which is connected to the other. The other end is electrically connected to the cathode of the light-emitting element 210.
[0158] The other electrode of the capacitive element C1 is electrically connected to the wiring CATHODE.
[0159] The anode of the light-emitting element 210 is electrically connected to the wiring ANODE.
[0160] Scan line GL1(i) has the function of supplying a selection signal. Scan line GL2(i) is control It has the function of supplying signals. Signal line SL(j) has the function of supplying image signals. A constant potential is supplied to the VCOM, CATHODE, and ANODE wirings, respectively. The anode side of the light-emitting element 210 is set to a high potential, and the cathode side is set to a lower potential than the anode side. It is possible.
[0161] Switch SW21 is controlled by a selection signal and controls the selected state of pixel 200. It functions as a selector transistor.
[0162] Transistor M controls the current flowing to the light-emitting element 210 according to the potential supplied to its gate. It functions as a drive transistor. When switch SW21 is in the conductive state, signal line SL The image signal supplied to (j) is supplied to the gate of transistor M, and depending on its potential, The luminescence brightness of the light-emitting element 210 can be controlled.
[0163] Switch SW22 has the function of controlling the gate potential of transistor M based on a control signal. It has. Specifically, switch SW22 generates a potential that puts transistor M into a non-conductive state. It can be supplied to the gate of transistor M.
[0164] Switch SW22 can be used, for example, to control pulse width. Based on control signals. During this period, current can be supplied from transistor M to light-emitting element 210. Alternatively, light emission The element 210 can represent grayscale based on the image signal and control signal.
[0165] Here, each transistor in pixel 200(i,j) has a channel formed within it. It is preferable to apply a transistor using a metal oxide (oxide semiconductor) as the semiconductor layer. stomach.
[0166] Using metal oxides with a wider band gap and lower carrier density than silicon A transistor can achieve an extremely small off-current. The current causes the charge accumulated in the capacitive element connected in series with the transistor to be released over a long period of time. It is possible to hold it in place. Therefore, a switch connected in series with the capacitive element C1 is particularly useful. Switch SW21 and switch SW22 use transistors with oxide semiconductors. This is preferable. In addition, other transistors that use oxide semiconductors in the same way By using a stencil, manufacturing costs can be reduced.
[0167] Furthermore, the transistor in pixel 200(i,j) has a semiconductor in which a channel is formed. Transistors using silicon control can also be used. In particular, single-crystal silicon and polycrystalline silicon By using highly crystalline silicon such as CON, a high field-effect mobility can be achieved. This is preferable because it allows for faster operation.
[0168] Furthermore, oxide semiconductors are applied to one or more of the transistors in pixel 200(i,j). The configuration uses transistors with silicon applied to them, and other transistors with silicon applied to them. That's fine.
[0169] Note that in Figure 7, the transistor is represented as an n-channel transistor. Alternatively, a p-channel transistor can be used.
[0170] [transistor] Next, we will explain transistors that can be used in display devices.
[0171] The structure of the transistors in the display device is not particularly limited. For example, planar transistors It can be a staggered transistor, or an inverse staggered transistor. It may also be a stator. Also, either a top gate structure or a bottom gate structure transition A sta structure may be used. Alternatively, gate electrodes may be provided above and below the channel.
[0172] The transistors in the display device include, for example, those that use a metal oxide in the channel formation region. A transistor can be used. This allows for the use of a transistor with extremely low off-current. It can be achieved.
[0173] Alternatively, the transistors in the display device have silicon in the channel formation region. A transistor may be applied. For example, amorphous silicon may be used as the transistor. Transistors, which have crystalline silicon (typically low-temperature polysilicon), Examples include transistors made of single-crystal silicon and other similar materials.
[0174] [Metal oxides] The following section describes metal oxides applicable to semiconductor layers.
[0175] The metal oxide preferably contains at least indium or zinc. In particular, indium It is preferable to include aluminum and zinc. In addition to these, aluminum, gallium, and zinc are also preferable. It is preferable that it contains ttrium or tin. Also, boron, titanium, iron, and nickel are preferable. Germanium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Ha One of the following, selected from phnium, tantalum, tungsten, or magnesium, It may contain multiple species.
[0176] Here, the metal oxide is an In-M-Zn oxide having indium, element M, and zinc. Let's consider the case where... Note that element M is aluminum, gallium, yttrium, or Examples include tin. Other elements that can be applied to element M include boron, titanium, iron, and nickel. Kel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, HAF Examples include nium, tantalum, tungsten, and magnesium. However, as element M, In some cases, it is acceptable to combine multiple of the aforementioned elements.
[0177] Metal oxide films can be formed by sputtering. Other methods include PLD (Plane-Likely Laser Drilling). Methods such as PECVD, thermal CVD, ALD, and vacuum deposition may be used.
[0178] In this specification, metal oxides containing nitrogen are also referred to as metal oxides (metal oxi They are sometimes collectively referred to as (de) metal oxides (met It may also be called (al oxynitride). For example, zinc oxynitride (ZnON) Any metal oxide containing nitrogen may be used in the semiconductor layer.
[0179] Furthermore, in this specification, etc., CAAC (c-axis aligned crystal ), and when referred to as CAC (Cloud-Aligned Composite) Yes. CAAC represents an example of a crystal structure, and CAC represents an example of a function or material composition.
[0180] For example, the semiconductor layer contains CAC (Cloud-Aligned Composite)-O S can be used.
[0181] CAC-OS or CAC-metal oxide is a material that has conductive properties in some parts. In addition, a portion of the material has insulating properties, while the material as a whole has semiconductor properties. Furthermore, CAC-OS or CAC-metal oxide is used as the semiconductor material for transistors. When used in layers, the conductive function is the function of allowing electrons (or holes) that act as carriers to flow. In other words, the insulating function is the function of preventing the flow of electrons, which act as carriers. Conductive function and insulating function By making the functions of sex and other functions work complementaryly, a switching function (On / O) is created. To impart a function (to cause ff) to CAC-OS or CAC-metal oxide. This can be done. In CAC-OS or CAC-metal oxide, each instrument By separating the functions of both, it becomes possible to maximize the capabilities of both.
[0182] Furthermore, CAC-OS or CAC-metal oxide has conductive and insulating properties. It has regions. The conductive region has the conductive function described above, and the insulating region has the insulating function described above. It has the function of [this]. Furthermore, within the material, the conductive region and the insulating region are at the nanoparticle level. In some cases, they are separated by a rib. Also, conductive regions and insulating regions are located within the material. They may be unevenly distributed. Furthermore, the conductive regions appear blurred around the edges and connected in a cloud-like pattern. There are cases where this occurs.
[0183] Furthermore, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region The marginal region is defined as being between 0.5 nm and 10 nm, preferably between 0.5 nm and 3 nm. These particles may be dispersed in the material at the following sizes.
[0184] Furthermore, CAC-OS or CAC-metal oxide has different band gaps. It is composed of the following components. For example, CAC-OS or CAC-metal oxi de consists of a component with a wide gap due to the insulating region and a component with a wide gap due to the conductive region. It consists of a component having a low gap. In this configuration, when the carrier is flowing... In components with a narrow gap, the carrier mainly flows. A component having a wide gap acts complementaryly with a component having a narrow gap. In conjunction with the components, carriers also flow to components with a wide gap. Therefore, the above C AC-OS or CAC-metal oxide is applied to the channel formation region of the transistor. When used, a high current driving force is required in the transistor's ON state, i.e., a large ON current. Furthermore, a high field-effect mobility can be obtained.
[0185] In other words, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite (metal It can also be called a matrix composite.
[0186] Oxide semiconductors (metal oxides) include single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. It can be divided into two parts. Examples of non-single-crystal oxide semiconductors include CAAC-OS(ca xis aligned crystalline oxide semiconductor tor), polycrystalline oxide semiconductor, nc-OS (nanocrystalline oxi de semiconductor), pseudo-amorphous oxide semiconductor (a-like OS: (Amorphous-like oxide semiconductor), and amorphous Examples include sodium oxide semiconductors.
[0187] CAAC-OS has c-axis orientation and multiple nanocrystals are linked in the ab-plane direction. Furthermore, it has a distorted crystal structure. Note that distortion refers to the region where multiple nanocrystals are connected. Within the region, between a region with aligned lattice arrangements and another region with aligned lattice arrangements, This refers to the part where the direction has changed.
[0188] Nanocrystals are based on a hexagonal structure, but they are not necessarily regular hexagons; they can also be non-regular hexagonal. Yes, it exists. Furthermore, the distortion may have a grid arrangement such as pentagons and heptagons. In CAAC-OS, even near strain, clear grain boundaries are present. It is also said that it is difficult to confirm the grain boundaries. In other words, due to the distortion of the lattice arrangement, It can be seen that the formation is suppressed. This is because CAAC-OS is in the ab plane direction The arrangement of oxygen atoms is not dense, and the bond distance between atoms changes due to the substitution of metal elements. This is because distortion can be tolerated by processes such as transformation.
[0189] Furthermore, CAAC-OS consists of a layer containing indium and oxygen (hereinafter referred to as the In layer), and element M A layered crystalline structure in which layers containing zinc and oxygen (hereinafter referred to as (M,Zn) layers) are stacked. It tends to have a layered structure (also called a layered structure). Furthermore, indium and element M are mutually substitutable. Therefore, if element M in the (M,Zn) layer is replaced with indium, the (In,M,Zn) layer and It can also be represented as follows: Furthermore, if the indium in the In layer is substituted with element M, then the (In,M) layer is formed. It can also be expressed as follows.
[0190] CAAC-OS is a highly crystalline metal oxide. On the other hand, CAAC-OS has a distinct crystal structure. Because it is difficult to identify grain boundaries, a decrease in electron mobility caused by grain boundaries is less likely to occur. It can be said that the crystallinity of metal oxides decreases due to the inclusion of impurities and the formation of defects. Because there may be impurities or defects (oxygen deficiency (V) O :oxygen va Also called cancy. It can also be said to be a metal oxide with low cancy (etc.). Therefore, CAAC- Metal oxides containing OS have stable physical properties. Therefore, CAAC-OS is Metal oxides are heat-resistant and highly reliable.
[0191] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially between 1 nm and 3 nm). It has periodicity in the atomic arrangement in the region of less than nm. Furthermore, nc-OS has different nanometers. No regularity in crystal orientation is observed between crystals. Therefore, no orientation is observed throughout the entire film. Therefore, depending on the analysis method, nc-OS can be classified as a-like OS or amorphous oxide semiconductor. It can sometimes be difficult to distinguish between them.
[0192] Furthermore, indium is a type of metal oxide containing indium, gallium, and zinc. Moo-gallium zinc oxide (hereinafter referred to as IGZO) is formed into the nanocrystals described above, resulting in a stable structure. In some cases, this may be necessary. In particular, IGZO tends to have difficulty growing crystals in the atmosphere. Smaller crystals (for example) are better than larger crystals (here, crystals of a few millimeters or a few centimeters). In some cases, using the aforementioned nanocrystal structure may result in greater structural stability.
[0193] a-like OS is a metal oxide having a structure between nc-OS and amorphous oxide semiconductors. It is a substance. an a-like OS has porous or low-density regions. That is, a-lik e OS has lower crystallinity compared to nc-OS and CAAC-OS.
[0194] Oxide semiconductors (metal oxides) can take on diverse structures, each possessing different properties. One embodiment of the invention is an oxide semiconductor, an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, and an a-lik It may have two or more of the following: e OS, nc-OS, and CAAC-OS.
[0195] The metal oxide film, which functions as a semiconductor layer, is either an inert gas or an oxygen gas or Both methods can be used to form the film. Note that the oxygen flow rate ratio during metal oxide film formation is also important. There are no particular limitations on the (oxygen partial pressure). However, when obtaining a transistor with high field-effect mobility... In this case, the oxygen flow rate ratio (oxygen partial pressure) during the deposition of the metal oxide film is 0% or more. Preferably 0% or less, more preferably 5% to 30%, and even more preferably 7% to 15%. preferable.
[0196] The metal oxide preferably has an energy gap of 2 eV or more, and more preferably 2.5 eV or more. It is more preferable that it be 3eV or more, and even more preferable that it be 3eV or more. By using metal oxides with a wide energy gap, the off-current of the transistor can be reduced. It is possible.
[0197] This embodiment can be combined with other embodiments as appropriate.
[0198] (Embodiment 3) In this embodiment, an electronic device according to one aspect of the present invention will be described using Figures 8 to 12. .
[0199] The electronic device of this embodiment has a display device according to one aspect of the present invention in its display unit. The display device has high display quality and low power consumption. The device is easily made higher resolution and larger. Therefore, it can be used in the display units of various electronic devices. It is possible.
[0200] Examples of electronic devices include television equipment, desktop or notebook computers, etc. Sony Computer, monitors for computers, digital signage, pachinko machines, etc. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, and digital cameras Digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals Examples include sound reproduction devices.
[0201] In particular, the display device according to one aspect of the present invention is capable of increasing resolution, making it suitable for relatively small displays. It can be suitably used in electronic devices having an indicator. For example, This includes wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted displays. VR (Virtual Reality) devices such as displays, and AR (Augmented Reality) glasses. Equipment for MR (Mixed Reality), or MR (Mixed Reality) It can be suitably used in devices for y), wearable devices that can be attached to the head, etc.
[0202] The electronic device of this embodiment has sensors (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, radiation (including functions for measuring radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation) It's fine if you do that.
[0203] The electronic device of this embodiment can have various functions. For example, it can display various information (static Functions to display still images, videos, text images, etc. on the display unit, touch panel function, calendar - Functions to display the date or time, and to run various software (programs) Functions, wireless communication functions, and functions to read programs or data recorded on recording media. It may have the following:
[0204] Figure 8(A) shows a perspective view of the glasses-type electronic device 900. The electronic device 900 has a pair of tables It includes a display panel 901, a pair of housings 902, a pair of optical elements 903, a pair of mounting parts 904, etc. do.
[0205] The electronic device 900 displays an image on the display panel 901 in the display area 906 of the optical component 903. An image can be projected. Since the optical element 903 is light-transmitting, the user can project an image of the optical element View the image displayed in the display area 906 by superimposing it onto the transmitted image visible through 903. Therefore, electronic device 900 is an electronic device capable of AR display.
[0206] The display panel 901 of the electronic device 900 has the function of displaying images, as well as the function of capturing images. It is preferable that it has the ability to display. In this case, the electronic device 900 displays via the optical member 903. The panel 901 can receive light incident on it, convert it into an electrical signal, and output it. This captures images of the user's eyes, or the eyes and surrounding area, and transmits the image information externally or electronically. The output can be provided to the arithmetic unit of the sub-device 900.
[0207] One housing 902 is equipped with a camera 905 capable of capturing images of the area in front. Although not shown in the diagram, a wireless receiver or cable can be connected to either of the housings 902. A connector is provided so that video signals and the like can be supplied to the housing 902. By placing an accelerometer such as a gyroscope sensor in position 02, the orientation of the user's head can be detected. It can also detect the orientation and display an image corresponding to that orientation in the display area 906. Preferably, the 902 is equipped with a battery, which can be charged wirelessly or via a wired connection. It is preferable that this be possible.
[0208] Using Figure 8(B), the method for projecting an image onto the display area 906 of the electronic device 900 will be explained. The housing 902 contains a display panel 901, a lens 911, and a reflector 912. Furthermore, the portion of the optical element 903 corresponding to the display area 906 has a half mirror and It has a reflective surface 913 that functions as such.
[0209] Light 915 emitted from the display panel 901 passes through the lens 911 and is reflected by the reflector 912. The light is reflected towards the optical member 903. Inside the optical member 903, the light 915 is reflected towards the optical member The end face of 903 undergoes repeated total internal reflection, reaching the reflective surface 913, thereby transferring an image to the reflective surface 913. This is projected. As a result, the user can see the light 915 reflected by the reflective surface 913 and the optical part Both the transmitted light 916 that has passed through the material 903 (including the reflective surface 913) can be seen. .
[0210] Figure 8 shows an example in which the reflector 912 and the reflective surface 913 each have curved surfaces. This allows for greater freedom in optical design compared to when these are planar, and The thickness of member 903 can be reduced. Note that the reflector plate 912 and the reflective surface 913 are planar. That is also acceptable.
[0211] As the reflector 912, a material having a mirror surface can be used, and it is preferable that it has a high reflectivity. It is also possible to use a half-mirror that utilizes the reflection of a metal film as the reflective surface 913. However, by using a prism that utilizes total internal reflection, the transmittance of transmitted light 916 can be increased. can.
[0212] Here, the electronic device 900 controls the distance and angle between the lens 911 and the display panel 901. It is preferable to have a mechanism for adjusting one or both of these. This allows for focus adjustment and image quality adjustment. It becomes possible to enlarge or reduce the image, for example, the lens 911 and the display panel 90. One or both of component 1 should be configured to be movable in the optical axis direction.
[0213] Preferably, the electronic device 900 has a mechanism that allows the angle of the reflector 912 to be adjusted. By changing the angle of the reflector 912, the position of the display area 906 where the image is displayed can be changed. This makes it possible to position the display area 906 in the optimal position according to the user's eye position. It becomes possible to place them.
[0214] A display device according to one embodiment of the present invention can be applied to the display panel 901. This allows for the creation of an electronic device 900 capable of displaying extremely high resolution.
[0215] Figures 9(A) and (B) show perspective views of a goggle-type electronic device 950. Figure 9(A) shows the electric Figure 9(B) shows the front, top, and left side views of the sub-device 950, and the electronic device 95 This is a perspective view showing the back, bottom, and right side of the 0.
[0216] The electronic device 950 includes a pair of display panels 951, a housing 952, a pair of mounting parts 954, and a buffer part. It has a material 955, a pair of lenses 956, etc. A pair of display panels 951 are located inside the housing 952. They are positioned in a location visible through the lens 956.
[0217] Electronic device 950 is an electronic device for VR. Users wearing electronic device 950, The image displayed on the display panel 951 can be viewed through the lens 956. By displaying different images on a pair of display panels 951, a 3D display using parallax is achieved. It is also possible to do so.
[0218] The rear side of the enclosure 952 is provided with an input terminal 957 and an output terminal 958. The child 957 receives video signals from video output devices and other sources, as well as a battery located inside the housing 952. A cable that supplies power for electrical purposes can be connected. Output terminal 958 is, for example, For example, it can function as an audio output terminal, allowing you to connect earphones, headphones, etc. This is possible. Furthermore, if the configuration allows for the output of audio data via wireless communication, or if external video is used... When outputting audio from an image output device, it is not necessary to provide an audio output terminal.
[0219] The electronic device 900 has a lens 956 and a display panel 951 that adjust according to the user's eye position. It is preferable that these have a mechanism that allows for adjustment of their left and right positions to achieve the optimal position. It is also possible to adjust the focus by changing the distance between the lens 956 and the display panel 951. It is preferable that it has a mechanism to do so.
[0220] A display device according to one aspect of the present invention can be applied to the display panel 951. This allows for the creation of an electronic device 950 capable of displaying extremely high resolution. It can provide a high level of immersion for the user.
[0221] The cushioning member 955 is the part that comes into contact with the user's face (forehead, cheeks, etc.). By fitting snugly against the user's face, it prevents light leakage and enhances immersion. This is possible. The cushioning member 955 is designed to protect the user's face when the user puts on the electronic device 950. It is preferable to use a soft material that adheres closely to the surface. For example, rubber, silicone rubber, Materials such as urethane and sponge can be used. Also, as the cushioning material 955, If you use a material where the surface of pongee or similar is covered with cloth or leather (natural leather or synthetic leather), This design minimizes gaps between the Zar's face and the buffer member 955, effectively preventing light leakage. Components that come into contact with the user's skin, such as the cushioning member 955 and the mounting part 954, are removable. This is preferable because it makes cleaning and replacement easier.
[0222] The electronic device 6500 shown in Figure 10(A) is a portable device that can be used as a smartphone. It is an information terminal.
[0223] The electronic device 6500 consists of a housing 6501, a display unit 6502, a power button 6503, and a button 65 04, includes speaker 6505, microphone 6506, camera 6507, and light source 6508, etc. The display unit 6502 is equipped with a touch panel function.
[0224] A display device according to one aspect of the present invention can be applied to the display unit 6502.
[0225] Figure 10(B) is a schematic cross-sectional view of the housing 6501 including the end on the microphone 6506 side.
[0226] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. Within the space surrounded by the protective member 6510, there is a display panel 6511, an optical member 6512, and a touch The sensor panel 6513, printed circuit board 6517, battery 6518, etc. are located here. .
[0227] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The 6513 is fixed by an adhesive layer (not shown).
[0228] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back. The FPC6515 is connected to the folded portion. C6516 is mounted. FPC6515 is located on the edge of the printed circuit board 6517. It is connected to the child.
[0229] A flexible display according to one aspect of the present invention can be applied to the display panel 6511. This makes it possible to create extremely lightweight electronic devices. Also, the display panel 6511 is extremely Because it is thin, it is possible to keep the thickness of electronic devices down while also equipping them with a large-capacity 6518 battery. Also, a part of the display panel 6511 is folded back, and the FPC6515 is attached to the back of the pixel area. By positioning the connection points, it is possible to realize electronic devices with narrow bezels.
[0230] Figure 11(A) shows an example of a television system. The television system 7100 is housed in a casing 71 The display unit 7000 is incorporated into 01. Here, the stand 7103 connects to the housing 71 This shows the configuration that supports 01.
[0231] A display device according to one embodiment of the present invention can be applied to the display unit 7000.
[0232] The television device 7100 shown in Figure 11(A) is operated by the operating switches provided in the housing 7101. This can be done via the switch or a separate remote control unit 7111. Alternatively, the display unit 700 It may also be equipped with a touch sensor, and by touching the display unit 7000 with a finger, etc., the TV will The control device 7100 may be operated. The remote control operator 7111 is the remote control operator 71 It may have a display unit that displays the information output from 11. The channel and volume can be controlled using the built-in control keys or touch panel. The video displayed on the display unit 7000 can be operated.
[0233] The television system 7100 will consist of a receiver and a modem, etc. This allows you to receive regular television broadcasts. Additionally, you can receive them via a modem using either a wired or wireless connection. By connecting to a line communication network, one-way (sender to receiver) or bidirectional communication is possible. It is also possible to communicate information in a direction (between a sender and receiver, or between receivers). ru.
[0234] Figure 11(B) shows an example of a notebook personal computer. The Computer 7200 consists of a casing 7211, a keyboard 7212, and a pointing device 7 It has external connection ports 7214, etc. The display unit 7000 is incorporated into the housing 7211. It is being made.
[0235] A display device according to one embodiment of the present invention can be applied to the display unit 7000.
[0236] Figures 11(C) and (D) show examples of digital signage.
[0237] The digital signage 7300 shown in Figure 11(C) consists of a housing 7301, a display unit 7000, and It also has a speaker 7303, etc. Furthermore, it has an LED lamp, operation keys (power switch, and It can have an operating switch, connection terminals, various sensors, a microphone, etc. ru.
[0238] Figure 11(D) shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 is a display unit 7000 that is installed along the curved surface of the column 7401. It has.
[0239] In Figures 11(C) and (D), a display device according to one embodiment of the present invention is applied to the display unit 7000. It is possible.
[0240] The larger the display area 7000, the more information can be provided at once. The wider the area (7000), the more easily it catches people's attention, which can, for example, enhance the effectiveness of advertising. Cut.
[0241] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It's desirable that it not only displays information but also allows users to operate it intuitively. Also, route information... Alternatively, if used for purposes such as providing traffic information, intuitive operation is possible. This can improve usability.
[0242] Also, as shown in Figures 11(C) and (D), the digital signage 7300 or digital Signage 7400 is an information terminal 7311 such as a smartphone owned by the user. It is preferable that it can communicate with the information terminal 7411 via wireless communication. For example, the display unit Information about the advertisement displayed on 7000 is shown on the image of information terminal 7311 or information terminal 7411. It can be displayed on the surface. Also, information terminal 7311 or information terminal 7411 can be operated. By doing so, the display on the 7000 display unit can be switched.
[0243] In addition, the information terminal 7 is connected to the digital signage 7300 or digital signage 7400. Execute a game using the screen of either the 311 or the information terminal 7411 as the control device (controller). It is also possible to allow this. This allows a large number of users to participate in the game simultaneously and enjoy it. It is possible.
[0244] The electronic device shown in Figures 12(A) to 12(F) consists of a housing 9000, a display unit 9001, and a speaker. -Cable 9003, operation key 9005 (including power switch or operation switch), connection terminal Child 9006, Sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, Light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, radiation, (Including functions for measuring flow rate, humidity, gradient, vibration, odor, or infrared radiation), Microwave It has 9008, etc.
[0245] The electronic devices shown in Figures 12(A) to 12(F) have various functions. For example, various Functions for displaying information (still images, videos, text images, etc.) on the display unit, touch panel function, A function that displays a calendar, date, or time, and various software (programs) Therefore, the function that controls the process, the wireless communication function, the program recorded on the recording medium or It can have functions such as reading and processing data. It is not limited to these and can have a variety of functions. Electronic devices have multiple display units. It is permissible to have a camera or similar device installed on an electronic device to capture still images or videos and record them on an external recording medium. It has functions such as saving to (or built into the camera), displaying captured images on the display unit, etc. It's fine if you do that.
[0246] Details of the electronic equipment shown in Figures 12(A) to 12(F) will be explained below.
[0247] Figure 12(A) is a perspective view showing the personal digital assistant (PDA) 9101. The PDA 9101 is a personal digital assistant (PDA) For example, it can be used as a smartphone. Note that the mobile information terminal 9101 is a speaker. A connector 9003, connection terminal 9006, sensor 9007, etc. may be provided. Also, a portable information terminal The end 9101 can display text and image information on its multiple surfaces. As shown in Figure 12(A) This shows an example displaying three icons 9050. Also, information 90 is shown by a dashed rectangle. 51 can also be displayed on other sides of the display unit 9001. An example of information 9051 is: Notifications for incoming emails, social media messages, and phone calls; subject lines and sender names for emails and social media messages. This includes the date and time, battery level, and antenna signal strength. Alternatively, see Information 9051. You may also display icon 9050 or similar in the location where the symbol is displayed.
[0248] Figure 12(B) is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 is a personal digital assistant (PDA). The display unit 9001 has the function of displaying information on three or more sides. Here, information 9052, information This shows an example where Report 9053 and Information 9054 are displayed on different sides. For example, user - With the portable information terminal 9102 stored in the breast pocket of clothing, the portable information terminal 910 Information 9053, displayed in a position visible from above 2, can also be viewed by the user. - This allows you to check the display without taking the personal digital assistant 9102 out of your pocket, for example, when making a phone call. You can decide whether or not to accept it.
[0249] Figure 12(C) is a perspective view showing a wristwatch-type personal information terminal 9200. Personal information terminal 9 200 can be used, for example, as a smartwatch. Also, the display unit 9001 is The display surface is curved, allowing the display to follow the curved surface. The portable information terminal 9200 communicates with, for example, a wireless headset. And you can also make hands-free calls. Also, the 9200 personal digital assistant has a connection terminal. The 9006 allows for mutual data transmission with other information terminals and also enables charging. The charging operation may also be performed by wireless power supply.
[0250] Figures 12(D), (E), and (F) are perspective views showing a foldable portable information terminal 9201. Yes. Also, Figure 12(D) shows the mobile information terminal 9201 in an unfolded state, and Figure 12(F) shows it folded. In its folded state, Figure 12(E) shows the transition from one of Figures 12(D) and 12(F) to the other. This is a perspective view of the device in its folded state. The 9201 personal digital information terminal offers excellent portability when folded and unfolded. When open, the seamless, wide display area provides excellent readability. (Portable Information Terminal 9) The display unit 9001 of 201 is connected by a hinge 9055 to three housings 900 It is supported by 0. For example, the display unit 9001 has a radius of curvature of 0.1 mm or more and 150 mm or less. It can be bent downwards.
[0251] This embodiment can be appropriately combined with other embodiments and examples. [Examples]
[0252] This example describes the results of fabricating a display device according to one aspect of the present invention.
[0253] In this embodiment, the display unit has a diagonal size of 2.23 inches, an effective pixel count of 20 x 20, and pixel size The size is 2000μm x 2000μm (mounting pitch of the LED package), Acti A matrix-type display device was fabricated.
[0254] The display element has three mini LED chips in red, green, and blue, and is 1mm square L I used the ED package.
[0255] Transistors include self-aligned top-gear transistors that use crystalline metal oxides as semiconductor layers. Transitions with a Top Gate Self-Alignment (TGSA) structure Ta was used. In-Ga-Zn oxides were used as the metal oxides.
[0256] The gate driver and source driver were not built-in.
[0257] The pixel circuit of the display device in this embodiment corresponds to the pixel circuit shown in Figure 7.
[0258] The display device of this embodiment has the top structure shown in Figures 1(A) to (C), and Figures 2(A) to (C) ) and the cross-sectional structure shown in Figures 3(A) to (C) are also included. Note that the insulating layer 104 and resin 129 We do not have one.
[0259] A glass substrate was used for substrate 102. Conductive layer 131R, conductive layer 131G, conductive layer 131B The conductive layer 132 has a titanium film with a thickness of approximately 100 nm and an aluminum film with a thickness of approximately 400 nm. A laminated structure of a film and a titanium film with a thickness of approximately 100 nm was used. That is, conductive layer 131R, In conductive layer 131G, conductive layer 131B, and conductive layer 132, the conductor 133 and The contact layer is a titanium film. An acrylic film with a thickness of approximately 2 μm was used for the protective layer 128.
[0260] After forming a laminated structure from transistor 120 to protective layer 128 on substrate 102, On the electrical layer 131R, on the conductive layer 131G, on the conductive layer 131B, and on the conductive layer 132, a conductor Silver paste was applied to part 133, and LED package 150 was mounted.
[0261] Figure 13 shows a photograph of the display of the device in this embodiment.
[0262] As described above, in this embodiment, a transistor is formed using a metal oxide as the semiconductor layer. By mounting LED packages onto a substrate, an active-matrix display device is fabricated. Furthermore, as shown in Figure 13, the display device fabricated in this embodiment yielded good display results. I was able to do it. [Explanation of Symbols]
[0263] C1: Capacitive element, GL1: Scan line, GL2: Scan line, SW21: Switch, SW22: Switch Switch, 100: Display device, 100A: Display device, 101: Circuit board, 102: Circuit board, 103 : Electrode, 104: Insulating layer, 106: Electrode, 108: Wiring, 109: Circuit, 110: Display unit 111: Semiconductor layer, 112: Electrode, 113: Light-emitting layer, 114: Semiconductor layer, 115: Electrode , 116: electrode, 117: semiconductor layer, 118: light-emitting layer, 119: semiconductor layer, 120: tra Transistor, 120A: Transistor, 120B: Transistor, 120C: Transistor , 121: conductive layer, 122: insulating layer, 123: metal oxide layer, 123i: channel forming region Region, 123n: Low resistance region, 124: Insulating layer, 124a: Insulating layer, 124b: Insulating layer, 1 25: conductive layer, 126a: conductive layer, 126b: conductive layer, 127: insulating layer, 128: protective layer ,129: resin, 130: pixel, 131B: conductive layer, 131G: conductive layer, 131R: conductive Layer, 132: conductive layer, 133: conductor, 141: substrate, 142: case, 143: wire 144: Wire, 145: Sealing layer, 146: Adhesive layer, 147: Color conversion layer, 150: LE D package, 151: PCB, 151B: Blue LED chip, 151G: Green LED Chip, 151R: Red LED chip, 152B: Electrode, 152G: Electrode, 152R: Electrode, 153: Electrode, 154: Heat sink, 155: LED package, 161: Conductive Layer, 162: insulating layer, 163: insulating layer, 164: insulating layer, 165: metal oxide layer, 166 : conductive layer, 167: insulating layer, 168: conductive layer, 171: insulating layer, 172: conductive layer, 173 : insulating layer, 174: substrate, 175: insulating layer, 181: insulating layer, 182: insulating layer, 183: Insulating layer, 184a: conductive layer, 184b: conductive layer, 185: insulating layer, 186: insulating layer, 18 7: conductive layer, 188: insulating layer, 189: conductive layer, 190: transistor, 191: substrate, 192: Element isolation layer, 193: Low resistance region, 194: Insulating layer, 195: Conductive layer, 196: Insulating layer, 198: conductive layer, 199: insulating layer, 200: pixel, 210: light-emitting element, 900: Electronic equipment, 901: display panel, 902: housing, 903: optical component, 904: mounting part, 9 05: Camera, 906: Display area, 911: Lens, 912: Reflector, 913: Reflective surface, 915: Light, 916: Transmitted light, 950: Electronic equipment, 951: Display panel, 952: Enclosure, 954: Mounting part, 955: Cushioning material, 956: Lens, 957: Input terminal, 958: Output Terminals, 6500: Electronic equipment, 6501: Enclosure, 6502: Display unit, 6503: Power button 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 65 08: Light source, 6510: Protective component, 6511: Display panel, 6512: Optical component, 651 3: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board 6518: Battery, 7000: Display unit, 7100: Television equipment, 7101: Enclosure Body, 7103: Stand, 7111: Remote control unit, 7200: Notebook-type personal computer Computer, 7211: Casing, 7212: Keyboard, 7213: Pointing device S, 7214: External connection port, 7300: Digital signage, 7301: Enclosure, 73 03: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar 7411: Information terminal, 9000: Enclosure, 9001: Display unit, 9003: Speaker, 9 005: Operation key, 9006: Connection terminal, 9007: Sensor, 9008: Microphone ,9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Mobile information terminal, 9102: Mobile information terminal, 9200 : Mobile information terminal, 9201: Mobile information terminal
Claims
[Claim 1] It has pixels, The pixel comprises a first transistor, a second transistor, a first conductive layer, and a light-emitting diode package. The light-emitting diode package comprises a first light-emitting diode, a second light-emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer. The first light-emitting diode has a first electrode and a second electrode, The second light-emitting diode has a third electrode and a fourth electrode, Either the source or the drain of the first transistor is electrically connected to the first electrode via the second conductive layer. Either the source or drain of the second transistor is electrically connected to the third electrode via the third conductive layer. The first conductive layer is electrically connected to the second electrode via the fourth conductive layer. The first conductive layer is electrically connected to the fourth electrode via the fourth conductive layer. A display device to which a constant potential is supplied to the first conductive layer.
Citation Information
Patent Citations
Reflective bank structure and method for integrating a light emitting device
US20140367705A1